Substrate Processing Equipment

Abstract

To improve in-plane uniformity of substrate processing.SOLUTION: A substrate processing device includes a substrate holder, a discharge nozzle, and an exhaust nozzle. The substrate holder holds a plurality of substrates at intervals in a vertical direction. The discharge nozzle is disposed on a side of the substrate holder and discharges gas in a direction different from a direction toward the plurality of substrates held by the substrate holder. The exhaust nozzle is disposed on an opposite side to the discharge nozzle across the substrate holder and exhausts the gas discharged from the discharge nozzle.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Batch-type substrate processing apparatuses are known that perform substrate processing, such as etching and film formation, on multiple substrates at the same time. Such substrate processing apparatuses hold multiple substrates at vertically spaced intervals using a substrate holder, and discharge gases toward the multiple substrates from discharge nozzles located to the sides of the substrate holder, thereby performing substrate processing according to the gases. The gas discharged from the discharge nozzles is exhausted from exhaust nozzles located on the opposite side of the substrate holder from the discharge nozzles. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 3-255618 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in a substrate processing apparatus that discharges gas from a discharge nozzle toward multiple substrates, there is a problem in that the in-plane uniformity of the substrate processing is impaired. That is, when gas is discharged from a discharge nozzle toward multiple substrates, the gas flow velocity is higher near the outer periphery of each substrate, which faces the discharge nozzle, than near the center of each substrate. This uneven gas flow velocity across the surface of each substrate can reduce the in-plane uniformity of the substrate processing.

[0005] The disclosed technique has been made in view of the above, and has an object to provide a substrate processing apparatus capable of improving the in-plane uniformity of substrate processing. [Means for solving the problem]

[0006] In one aspect, the substrate processing apparatus disclosed herein includes a substrate holder, a discharge nozzle, and an exhaust nozzle. The substrate holder holds multiple substrates at intervals in the vertical direction. The discharge nozzle is disposed to the side of the substrate holder and discharges gas in a direction different from the direction toward the multiple substrates held by the substrate holder. The exhaust nozzle is disposed on the opposite side of the substrate holder from the discharge nozzle and exhausts the gas discharged from the discharge nozzle. [Effects of the Invention]

[0007] According to one aspect of the substrate processing apparatus disclosed in the present application, it is possible to improve the in-plane uniformity of substrate processing. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the discharge nozzle and the exhaust nozzle. [Figure 3] FIG. 3 is a diagram showing an example of a simulation result of gas flow velocity distribution in the substrate processing apparatus according to the first embodiment. [Figure 4] FIG. 4 is a diagram showing an example of the configuration of a substrate processing apparatus according to the second embodiment. [Figure 5] FIG. 5 is a diagram showing an example of the configuration of a substrate processing apparatus according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. Note that the disclosed technology is not limited to these embodiments. Furthermore, the embodiments can be appropriately combined as long as the processing contents are not contradictory. Furthermore, the same components in the following embodiments will be given the same reference numerals, and redundant explanations will be omitted.

[0010] (First embodiment) [Configuration of substrate processing equipment] Fig. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 100 according to the first embodiment. As shown in Fig. 1, the substrate processing apparatus 100 is configured as a batch-type substrate processing apparatus that can collectively perform substrate processing, such as etching processing and film formation processing, on a plurality of substrates W, such as semiconductor wafers.

[0011] The substrate processing apparatus 100 includes a heating furnace 110. The heating furnace 110 includes a cover member 111 and a heater 112. The cover member 111 is a cylindrical member with a ceiling. The heater 112 is provided on the inner circumferential surface of the cover member 111.

[0012] A processing vessel 120 made of, for example, quartz is disposed in the heating furnace 110. The heater 112 is provided so as to surround the outside of the processing vessel 120.

[0013] A wafer boat (an example of a substrate holder) 130 is disposed inside the processing vessel 120. The wafer boat 130 is made of, for example, quartz. The wafer boat 130 holds multiple substrates W at intervals in the vertical direction. The wafer boat 130 can be loaded into and unloaded from the processing vessel 120 by being raised and lowered by a lifting mechanism (not shown). The wafer boat 130 can also be rotated within the processing vessel 120 by a rotation mechanism (not shown).

[0014] A discharge nozzle 140 is disposed on the side of the wafer boat 130. The discharge nozzle 140 is formed of, for example, quartz, penetrates the bottom of the cover member 111, and extends upward within the processing vessel 120 along the inner wall surface of the processing vessel 120. The discharge nozzle 140 has a plurality of discharge ports 141 arranged vertically at intervals on the side surface so as not to face the plurality of substrates W. The plurality of discharge ports 141 have the same diameter. The intervals between the discharge ports 141 are set, for example, to be the same as the intervals between the plurality of substrates W held in the wafer boat 130. The vertical height positions of each discharge port 141 are set, for example, so that each discharge port 141 is located midway between vertically adjacent substrates W. The discharge nozzle 140 discharges gas from the plurality of discharge ports 141 in a direction different from the direction toward the plurality of substrates W held in the wafer boat 130.

[0015] An exhaust nozzle 150 is disposed on the opposite side of the wafer boat 130 from the discharge nozzle 140. The exhaust nozzle 150 is formed of, for example, quartz, penetrates the bottom of the cover member 111, and extends upward within the processing vessel 120 along the inner wall surface of the processing vessel 120. The exhaust nozzle 150 has a plurality of exhaust ports 151 arranged vertically and spaced apart at positions on the side surface facing the plurality of substrates W. The exhaust nozzle 150 exhausts the gas discharged from the discharge nozzle 140.

[0016] If the discharge nozzle 140 discharges gas toward multiple substrates W, the gas flow velocity increases near the outer periphery of each substrate W facing the discharge nozzle 140 compared to the center of each substrate W, resulting in non-uniform gas flow velocity across the surface of each substrate W. This may result in a decrease in the uniformity of substrate processing across the surface.

[0017] In contrast, the discharge nozzle 140 discharges gas in a direction different from the direction toward the plurality of substrates W, thereby preventing a local increase in the gas flow velocity near the outer periphery of each substrate W facing the discharge nozzle 140. Therefore, the substrate processing apparatus 100 according to the first embodiment can prevent unevenness in the gas flow velocity within the surface of each substrate W, compared to, for example, a substrate processing apparatus that discharges gas from the discharge nozzle 140 toward the plurality of substrates W. As a result, the substrate processing apparatus 100 according to the first embodiment can improve the in-surface uniformity of substrate processing.

[0018] A gas supply mechanism 160 that introduces gases such as etching gas and film-forming raw material gas into the discharge nozzle 140 is connected to the discharge nozzle 140. The gas supply mechanism 160 includes a gas supply source 161 and a gas pipe 162 that introduces gas from the gas supply source 161 to the discharge nozzle 140. A flow rate controller 163 and an on-off valve 164 are provided in the gas pipe 162.

[0019] An exhaust pipe 171 is connected to the exhaust nozzle 150, and an exhaust device 173 is connected to the exhaust pipe 171 via a pressure adjustment valve 172. The exhaust device 173 exhausts gas from inside the processing vessel 120 through the exhaust nozzle 150 and the exhaust pipe 171.

[0020] [Structure of discharge nozzle and exhaust nozzle] Here, the structures of the discharge nozzle 140 and the exhaust nozzle 150 will be further described with reference to Fig. 2. Fig. 2 is a schematic plan view of the discharge nozzle 140 and the exhaust nozzle 150. Fig. 2 also shows a plurality of substrates W held on the wafer boat 130 together with the discharge nozzle 140 and the exhaust nozzle 150. As described above, the discharge nozzle 140 is disposed to the side of the wafer boat 130, and the exhaust nozzle 150 is disposed on the opposite side of the wafer boat 130 from the discharge nozzle 140.

[0021] A plurality of discharge ports 141 (see FIG. 1) are arranged vertically at intervals on a side surface of the discharge nozzle 140 at positions not facing the plurality of substrates W. Specifically, as shown in FIG. 2, the discharge ports 141 are arranged at positions on the side surface of the discharge nozzle 140 corresponding to a direction in which the angle θ1 with respect to the direction D1 from the central axis of the discharge nozzle 140 toward the central axis of the substrate W is between 90° and 270°. In this embodiment, the discharge ports 141 are arranged at positions on the side surface of the discharge nozzle 140 corresponding to a direction in which the angle θ1 is 180° (i.e., the direction opposite to the direction D1 from the central axis of the discharge nozzle 140 toward the central axis of the substrate W).

[0022] By arranging the multiple discharge ports 141 at positions on the side of the discharge nozzle 140 that do not face the multiple substrates W, gas can be efficiently discharged from the multiple discharge ports 141 in a direction different from the direction toward the multiple substrates W.

[0023] A plurality of exhaust ports 151 (see FIG. 1) are arranged vertically at intervals on the side surface of the exhaust nozzle 150 at positions facing the plurality of substrates W. Specifically, as shown in FIG. 2, the exhaust ports 151 are arranged at positions on the side surface of the exhaust nozzle 150 corresponding to a direction in which the angle θ2 with respect to the direction D2 from the central axis of the exhaust nozzle 150 toward the central axis of the substrate W is between -90 and 90°. In this embodiment, the exhaust ports 151 are arranged at positions on the side surface of the exhaust nozzle 150 corresponding to a direction in which the angle θ2 is 0° (i.e., the direction D2 from the central axis of the exhaust nozzle 150 toward the central axis of the substrate W).

[0024] By arranging multiple exhaust ports 151 at positions facing multiple substrates W on the side of the exhaust nozzle 150, gas that is discharged from multiple discharge ports 141 and passes through the space between the substrates W can be efficiently exhausted from the multiple exhaust ports 151.

[0025] 1 and 2, the exhaust ports 151 correspond one-to-one to the discharge ports 141 and have the same diameter. In this manner, gas can be efficiently discharged from the discharge ports 141 in a direction different from the direction toward the substrates W, and gas that has been discharged from the discharge ports 141 and passed through the spaces between the substrates W can be efficiently exhausted from the exhaust ports 151.

[0026] [Simulation Results] Next, with reference to FIG. 3, a simulation result of gas flow velocity distribution in the substrate processing apparatus 100 according to the first embodiment will be described. FIG. 3 is a diagram showing an example of a simulation result of gas flow velocity distribution in the substrate processing apparatus 100 according to the first embodiment. The horizontal axis of FIG. 3 indicates the radial position [mm] relative to the center position of the substrate W. The vertical axis of FIG. 3 indicates the gas flow velocity [m / s] in a plane passing through the midpoint between vertically adjacent substrates W and parallel to the surface of the substrate W. That is, FIG. 3 shows the gas flow velocity distribution from a position "-150 mm" to a position "+150 mm" on the substrate W, with the center position of the substrate W set as "0." The position "+150 mm" on the substrate W is the outer peripheral position of the substrate W facing the discharge nozzle 140, and the position "-150 mm" on the substrate W is the outer peripheral position of the substrate W facing the exhaust nozzle 150.

[0027] 3, Example 1 is a case where a simulation was performed on the substrate processing apparatus 100 according to the first embodiment. Comparative Example 1 is a case where a simulation was performed on a substrate processing apparatus provided with a discharge nozzle that discharges gas toward a plurality of substrates W.

[0028] As shown in FIG. 3 , in Comparative Example 1, the gas flow velocity is highest near the “+100 mm” position of the substrate W, which is near the outer periphery facing the discharge nozzle 140, and gradually decreases toward the “−100 mm” position, forming a tapered distribution. In contrast, in Example 1, the flow velocity is distributed approximately uniformly from the center position of the substrate W to the outer periphery. That is, in Example 1, by using a discharge nozzle 140 that discharges gas in a direction different from the direction toward the multiple substrates W, the tapered distribution of the gas flow velocity can be made closer to a distribution in which the flow velocity is approximately uniform from the center position of the substrate W to the outer periphery. That is, in Example 1, non-uniformity in the gas flow velocity within the surface of the substrate W can be suppressed. As a result, the substrate processing apparatus 100 according to the first embodiment can improve the in-surface uniformity of substrate processing.

[0029] (Second embodiment) Next, the configuration of a substrate processing apparatus according to a second embodiment will be described with reference to Fig. 4. Fig. 4 is a diagram showing an example of the configuration of a substrate processing apparatus according to the second embodiment.

[0030] 4, a discharge nozzle 140A is disposed on the side of a wafer boat 130 in a substrate processing apparatus 100A according to the second embodiment. The discharge nozzle 140A has a plurality of discharge ports 141A arranged vertically at intervals on the side surface thereof so as not to face the plurality of substrates W. The diameters of the plurality of discharge ports 141A increase as the vertical height position increases.

[0031] In this way, by increasing the diameter of the plurality of discharge ports 141A as the vertical position increases, it is possible to reduce the difference in gas discharge pressure caused by the difference in the vertical position of the plurality of discharge ports 141A. Therefore, it is possible to suppress unevenness in the gas flow rate between the surfaces of the plurality of substrates W, thereby improving the inter-surface uniformity of substrate processing.

[0032] An exhaust nozzle 150A is disposed on the opposite side of the discharge nozzle 140A across the wafer boat 130. The exhaust nozzle 150A has a plurality of exhaust ports 151A arranged vertically at intervals on its side surface facing the plurality of substrates W. The diameters of the exhaust ports 151A increase as their vertical positions increase.

[0033] In this way, by increasing the diameter of the exhaust ports 151A as the vertical position increases, it is possible to reduce differences in gas exhaust pressure due to differences in the vertical positions of the exhaust ports 151A. Therefore, it is possible to suppress unevenness in gas flow velocity between the surfaces of the substrates W, thereby improving inter-surface uniformity in substrate processing.

[0034] (Third embodiment) Next, the configuration of a substrate processing apparatus according to a third embodiment will be described with reference to Fig. 5. Fig. 5 is a diagram showing an example of the configuration of a substrate processing apparatus according to the third embodiment.

[0035] As shown in FIG. 5, an exhaust nozzle 150B is disposed on the opposite side of the wafer boat 130 from the discharge nozzle 140 in the substrate processing apparatus 100B according to the third embodiment. The exhaust nozzle 150B has a plurality of exhaust ports 151B arranged vertically at intervals on its side surface so as not to face the plurality of substrates W. Specifically, the exhaust ports 151B are disposed on the side surface of the exhaust nozzle 150B at positions corresponding to a direction in which the angle θ2 with respect to a direction D2 (see FIG. 2) from the central axis of the exhaust nozzle 150B toward the central axis of the substrate W is between 90° and 270°. In this embodiment, the exhaust ports 151B are disposed on the side surface of the exhaust nozzle 150B at positions corresponding to a direction in which the angle θ2 is 180° (i.e., a direction opposite to the direction D2 from the central axis of the exhaust nozzle 150B toward the central axis of the substrate W).

[0036] By arranging multiple exhaust ports 151B on the side surface of the exhaust nozzle 150B at positions facing multiple substrates W, it is possible to prevent a local increase in the gas flow velocity near the outer periphery facing the exhaust nozzle 150B of each substrate W. This makes it possible to further prevent unevenness in the gas flow velocity within the surface of each substrate W.

[0037] As described above, the substrate processing apparatus according to the embodiment (e.g., substrate processing apparatus 100, 100A, 100B) includes a substrate holder (e.g., wafer boat 130), discharge nozzles (e.g., discharge nozzles 140, 140A), and exhaust nozzles (e.g., exhaust nozzles 150, 150A, 150B). The substrate holder holds multiple substrates (e.g., substrates W) at intervals in the vertical direction. The discharge nozzles are disposed on the sides of the substrate holder and discharge gas in a direction different from the direction toward the multiple substrates held by the substrate holder. The exhaust nozzles are disposed on the opposite side of the substrate holder from the discharge nozzles and exhaust the gas discharged from the discharge nozzles. As a result, the substrate processing apparatus according to the embodiment can improve the in-plane uniformity of substrate processing.

[0038] The discharge nozzle may also have a plurality of discharge ports (e.g., discharge ports 141, 141A) arranged vertically at intervals on a side surface thereof not facing the plurality of substrates. The discharge nozzle may discharge gas from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates held by the substrate holder. This allows the substrate processing apparatus according to the embodiment to efficiently discharge gas from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates.

[0039] Furthermore, the diameter of the plurality of outlets (e.g., outlet 141A) may increase as the vertical position increases. This allows the substrate processing apparatus according to the embodiment to suppress unevenness in the gas flow rate between the surfaces of the plurality of substrates, thereby improving the inter-surface uniformity of substrate processing.

[0040] The exhaust nozzle may also have a plurality of exhaust ports (e.g., exhaust ports 151, 151A) arranged vertically at intervals on a side surface facing the plurality of substrates. The exhaust nozzle may exhaust gas discharged from the plurality of outlets through the plurality of exhaust ports. As a result, according to the substrate processing apparatus of the embodiment, gas discharged from the plurality of outlets and passing through the spaces between the substrates can be efficiently exhausted through the plurality of exhaust ports.

[0041] The exhaust nozzle may also have a plurality of exhaust ports (e.g., exhaust port 151B) arranged vertically at intervals on a side surface thereof not facing the substrates. The exhaust nozzle may exhaust gas discharged from the plurality of discharge ports through the plurality of exhaust ports. This makes it possible to further suppress unevenness in the gas flow velocity within the surface of each substrate in the substrate processing apparatus according to the embodiment.

[0042] In addition, the diameter of the plurality of exhaust ports may increase as the vertical position increases, thereby suppressing unevenness in gas flow velocity between the surfaces of the plurality of substrates, thereby improving inter-surface uniformity in substrate processing.

[0043] The plurality of exhaust ports may correspond one-to-one to the plurality of discharge ports and may have the same diameter. As a result, the substrate processing apparatus according to the embodiment can efficiently discharge gas from the plurality of discharge ports in a direction different from the direction toward the plurality of substrates, and can efficiently exhaust gas from the plurality of exhaust ports that has been discharged from the plurality of discharge ports and passed through the spaces between the substrates. [Explanation of symbols]

[0044] 100, 100A, 100B Substrate Processing Equipment 130 wafer boat 140,140A discharge nozzle 141,141A outlet 150, 150A, 150B exhaust nozzle 151, 151A, 151B exhaust port

Claims

1. a substrate holder that holds a plurality of substrates at intervals in the vertical direction; a discharge nozzle disposed on a side of the substrate holder and configured to discharge a gas in a direction opposite to a direction toward the plurality of substrates held by the substrate holder; an exhaust nozzle that is disposed on the opposite side of the substrate holder from the discharge nozzle and that exhausts the gas discharged from the discharge nozzle; A substrate processing apparatus comprising:

2. The discharge nozzle is The gas supply device has a plurality of discharge ports arranged vertically at intervals on the side surface at positions not facing the plurality of substrates, and discharges gas from the plurality of discharge ports in the opposite direction. The substrate processing apparatus according to claim 1 .

3. The plurality of outlets include: The higher the vertical position, the larger the diameter. The substrate processing apparatus according to claim 2 .

4. The exhaust nozzle is A plurality of exhaust ports are provided at positions on the side surface facing the plurality of substrates and arranged in a line at intervals in the vertical direction, and the gas discharged from the plurality of discharge ports is exhausted from the plurality of exhaust ports. The substrate processing apparatus according to claim 2 .

5. The exhaust nozzle is The gas supply device has a plurality of exhaust ports arranged vertically at intervals on a side surface at positions not facing the plurality of substrates, and the gas discharged from the plurality of exhaust ports is discharged from the plurality of exhaust ports. The substrate processing apparatus according to claim 2 .

6. The plurality of exhaust ports are The higher the vertical position, the larger the diameter.

6. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is a processing chamber.

7. The plurality of exhaust ports are The plurality of outlets correspond one-to-one to each other and have the same diameter.

7. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is a substrate processing apparatus.

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