SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a technique capable of reducing temperature variation in liquid processing between a plurality of liquid processing modules.SOLUTION: A substrate processing apparatus according to one aspect of the present disclosure includes a plurality of liquid processing modules. The plurality of liquid processing modules is arranged side by side in at least one of a horizontal direction and a vertical direction and supplies a processing liquid to a substrate to perform liquid processing. Each of the liquid processing modules has a liquid processing unit, a heat source region, and a fan. The liquid processing unit performs liquid processing on the substrate. The heat source region has a heat source below the liquid processing unit. The fan cools the heat source region.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] In the manufacturing process of semiconductor devices and the like, liquid processing processes in which processing liquids are supplied to substrates such as semiconductor wafers are frequently used, such as cleaning processes of substrates with cleaning liquids, plating processes of substrates with plating liquids, and etching processes with etching liquids. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-99528 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce temperature variations in liquid treatment among a plurality of liquid treatment modules. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a plurality of liquid processing modules. Lu The liquid processing modules are arranged in a row in at least one of a horizontal direction and a vertical direction, and supply a processing liquid to a substrate to perform liquid processing. .Ma The liquid treatment module includes a liquid treatment unit, a heat source region, and ,centre The liquid processing unit performs liquid processing on the substrate. The heat source region includes: Below the liquid processing unit Has a heat source .centre The fan cools the heat source area. 。 [Effects of the Invention]

[0006] According to the present disclosure, it is possible to reduce temperature variations in liquid treatment among a plurality of liquid treatment modules. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic perspective view showing the external configuration of a liquid processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional plan view of the liquid processing apparatus according to the embodiment. [Figure 3] FIG. 3 is a schematic vertical cross-sectional view of the liquid processing apparatus according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view of the liquid processing module according to the embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional side view showing the configuration of the liquid processing unit according to the embodiment. [Figure 6] FIG. 6 is a diagram illustrating the temperature control process of a plurality of liquid processing modules according to the embodiment. [Figure 7] FIG. 7 is a diagram illustrating the temperature control process of a plurality of liquid processing modules according to the embodiment. [Figure 8] FIG. 8 is a diagram illustrating the temperature control process of a plurality of liquid processing modules according to the embodiment. [Figure 9] FIG. 9 is a diagram for explaining another temperature control process for a plurality of liquid processing modules according to the embodiment. [Figure 10] FIG. 10 is a diagram illustrating another temperature control process for a plurality of liquid processing modules according to the embodiment. [Figure 11] FIG. 11 is a diagram illustrating yet another temperature control process for a plurality of liquid processing modules according to the embodiment. [Figure 12] FIG. 12 is a diagram illustrating yet another temperature control process for a plurality of liquid processing modules according to the embodiment. [Figure 13] FIG. 13 is a view for explaining the exhaust process of a plurality of liquid processing modules according to the embodiment. [Figure 14]FIG. 14 is a flowchart showing the procedure of the temperature control process executed by the liquid processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed herein will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the following embodiments. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] In the manufacturing process of semiconductor devices and the like, liquid processing processes in which processing liquids are supplied to substrates such as semiconductor wafers are frequently used, such as cleaning processes of substrates with cleaning liquids, plating processes of substrates with plating liquids, and etching processes with etching liquids.

[0010] Furthermore, in order to efficiently perform this type of liquid treatment, a single liquid treatment apparatus is provided with a plurality of liquid treatment modules.

[0011] However, in the above-mentioned conventional technology, if a piping line for a processing liquid used at room temperature is located near a piping line for a processing liquid used at high temperature, there is a risk that the temperature of the processing liquid at room temperature will rise due to heat radiation from the piping line for the processing liquid used at high temperature.

[0012] Furthermore, since the waiting time before the start of liquid processing of the next substrate is not necessarily constant among the multiple liquid processing modules, a longer waiting time may cause the temperature of the processing liquid at room temperature to rise further. In other words, with the conventional technology, there is a risk of temperature variations in the liquid processing due to non-uniformity in waiting times among the multiple liquid processing modules.

[0013] Therefore, it is desired to realize a technology that can overcome the above-mentioned problems and reduce the temperature variation in liquid treatment among a plurality of liquid treatment modules.

[0014] <Configuration of liquid treatment device> First, the schematic configuration of a liquid processing apparatus 1 according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic perspective view showing the external configuration of the liquid processing apparatus 1 according to an embodiment, and Figure 2 is a schematic cross-sectional plan view of the liquid processing apparatus 1 according to an embodiment. The liquid processing apparatus 1 is an example of a substrate processing apparatus.

[0015] In the following description, to clarify the positional relationships, mutually orthogonal X-, Y-, and Z-axes are defined, and the positive Z-axis direction is defined as the vertically upward direction. In the following description, the negative X-axis side is defined as the front of the liquid treatment device, and the positive X-axis side is defined as the rear of the liquid treatment device.

[0016] 1, liquid processing apparatus 1 according to the embodiment includes a loading station 3, a carry-in / out station 4, a delivery station 5, and a liquid processing station 6. These are arranged adjacent to each other from the front to the rear of liquid processing apparatus 1 in the order of loading station 3, carry-in / out station 4, delivery station 5, and liquid processing station 6.

[0017] The loading station 3 is a place where carriers C that store multiple (e.g., 25) wafers W in a horizontal position are placed, and for example, four carriers C are placed side by side in close contact with the front wall of the loading / unloading station 4.

[0018] 2, the loading / unloading station 4 is disposed behind the loading station 3 (on the positive side of the X-axis), and includes a substrate transfer device 41. In the loading / unloading station 4, the substrate transfer device 41 transfers the wafer W between the carrier C placed on the loading station 3 and the delivery station 5.

[0019] The delivery station 5 is disposed behind the loading / unloading station 4 and includes a delivery table 51. In the delivery station 5, the wafer W is delivered via the delivery table 51 between the substrate transfer device 41 of the loading / unloading station 4 and the substrate transfer device 61 of the liquid processing station 6, which will be described later.

[0020] Liquid processing station 6 is arranged behind delivery station 5. In liquid processing station 6, a substrate transport device 61 is arranged in the center in the Y-axis direction, and a plurality of liquid processing units 2 (here, five on each side) are arranged in the front-to-rear direction on each side of substrate transport device 61.

[0021] In liquid processing station 6, substrate transfer device 61 transfers wafer W between transfer table 51 of transfer station 5 and each liquid processing unit 2, and each liquid processing unit 2 performs liquid processing on wafer W.

[0022] The liquid processing unit 2 is an apparatus that performs a predetermined liquid processing on the wafer W by supplying a processing liquid to the wafer W. Here, an example will be described in which the liquid processing unit 2 is a substrate cleaning apparatus that cleans the wafer W, but the liquid processing unit is not limited to a substrate cleaning apparatus.

[0023] Liquid processing apparatus 1 also includes a control unit 9. Control unit 9 is a device that controls the operation of liquid processing apparatus 1. Control unit 9 is, for example, a computer, and includes a storage unit (not shown). The storage unit stores programs that control various processes, such as liquid processing. Control unit 9 controls the operation of liquid processing apparatus 1 by reading and executing the programs stored in the storage unit.

[0024] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit of the control unit 9. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0025] In liquid processing apparatus 1, first, substrate transfer device 41 in load / unload station 4 takes out one wafer W from carrier C placed in placement station 3 and places the taken-out wafer W on transfer table 51 in delivery station 5. Wafer W placed on transfer table 51 is transferred by substrate transfer device 61 in liquid processing station 6 and loaded into one of liquid processing units 2.

[0026] The wafer W carried into the liquid processing unit 2 is subjected to a substrate cleaning process by the liquid processing unit 2, and then carried out of the liquid processing unit 2 by the substrate transfer device 61 and placed again on the delivery table 51. Then, the processed wafer W placed on the delivery table 51 is returned to the carrier C by the substrate transfer device 41 of the carry-in / out station 4.

[0027] <Liquid treatment equipment piping line configuration> Next, the configuration of various piping lines provided in liquid processing apparatus 1 will be described with reference to Figures 3 to 5. Figure 3 is a schematic vertical cross-sectional view of liquid processing apparatus 1 according to an embodiment. As shown in Figure 3, the processing liquid supply system includes supply source 80, piping lines 81 to 84, a plurality of valve boxes 85, and a plurality of flow control units 86.

[0028] The supply source 80 supplies various processing liquids and includes, for example, a plurality of tanks (not shown) that individually store the various processing liquids, and a plurality of pumps (not shown) that send the various processing liquids stored in the plurality of tanks to the corresponding piping lines 81 to 84.

[0029] Piping lines 81-84 are each connected at one end to supply source 80, for example, to form a circulation path for the corresponding processing liquid. Piping lines 81 and 82 are an example of a heat source, and supply high-temperature processing liquid to liquid processing unit 2.

[0030] For example, high-temperature SC1 (a mixture of ammonia and hydrogen peroxide solution) supplied from a supply source 80 flows through the piping line 81. For example, high-temperature DIW (deionized water) supplied from the supply source 80 flows through the piping line 82.

[0031] Piping line 83 and piping line 84 supply a processing liquid at room temperature to liquid processing unit 2. For example, DHF (dilute hydrofluoric acid) at room temperature supplied from supply source 80 flows through piping line 83. For example, DIW at room temperature supplied from supply source 80 flows through piping line 84.

[0032] The plurality of valve boxes 85 are arranged along piping lines 81 to 84, and are arranged below the plurality of liquid processing units 2 provided in liquid processing station 6, respectively.

[0033] The valve box 85 houses a flow control unit 86. The flow control unit 86 is a device in which flow control devices including a flow control valve, a flow meter, etc. are mounted together on a flat support member.

[0034] 4 is a schematic cross-sectional view of a liquid treatment module 7 according to the embodiment. In the liquid treatment apparatus 1 according to the embodiment, one liquid treatment module 7 is configured with one liquid treatment unit 2 and one heat source region 8 corresponding to the liquid treatment unit 2, as shown in FIG.

[0035] The heat source region 8 has the above-mentioned piping lines 81 to 84, the valve box 85, the flow control unit 86, and in addition, a control board 87. The control board 87 is an example of a heat source, and controls the flow control unit 86 and the like. The control board 87 is housed in the valve box 85, for example.

[0036] Further, a temperature sensor 91 and a fan 92 are provided near heat source region 8. Temperature sensor 91 measures the temperature of heat source region 8. Fan 92 cools heat source region 8. Fan 92 cools heat source region 8, for example, by blowing the atmosphere outside liquid processing apparatus 1 toward heat source region 8.

[0037] As shown in FIG. 4, in the heat source region 8 according to the embodiment, the piping lines 81, 82, and control board 87, which are heat sources, are arranged above the valve box 85, and the piping lines 83 and 84, through which the processing liquid at room temperature flows, are arranged below the valve box 85.

[0038] In this way, by arranging the piping lines 83 and 84, through which the room-temperature processing liquid flows, away from the heat source, it is possible to suppress a temperature increase of the room-temperature processing liquid and a temperature decrease of the high-temperature processing liquid. In other words, according to the embodiment, it is possible to reduce temperature variations among various processing liquids.

[0039] Liquid processing apparatus 1 is also provided with a discharge system for discharging the processing liquid after being supplied to liquid processing unit 2 to the outside of liquid processing apparatus 1. As shown in Fig. 4, the discharge system includes a main discharge pipe 100 and a plurality of branch discharge pipes 101, 102 (see Fig. 5) branching off from main discharge pipe 100 for each processing liquid.

[0040] 4, main discharge pipe 100 and branch discharge pipes 101 and 102 are arranged in liquid processing station 6. After being supplied to wafer W (see FIG. 5), various processing liquids are discharged to the outside of liquid processing apparatus 1 through main discharge pipe 100 and branch discharge pipes 101 and 102.

[0041] 5 is a schematic side cross-sectional view showing the configuration of a liquid processing unit 2 according to an embodiment. As shown in FIG.

[0042] The rotating plate 24 rotatably holds the wafer W. The rotation support part 25 supports the rotating plate 24 from the lower surface side, and rotates the rotating plate 24 by a rotation motor (not shown).

[0043] Rotating plate 24 is a disk-shaped member, and has a surface provided with a plurality of holding members 241 for holding wafers W. Wafers W are held at a position above the surface of rotating plate 24 via a gap. Rotation support part 25 is rotatably held by bearing part 251 provided on base plate 28 on which liquid processing unit 2 is placed.

[0044] Furthermore, the liquid processing unit 2 includes a first nozzle 26 for supplying a high-temperature processing liquid to the surface of the wafer W, and a second nozzle 27 for supplying a room-temperature processing liquid to the surface of the wafer W.

[0045] The first nozzle 26 is supported by a first arm 261 and can move between a processing position above the wafer W held on the rotating plate 24 and a retracted position retracted from this processing position. The second nozzle 27 is supported by a second arm 271 and can move between the processing position and the retracted position.

[0046] The first nozzle 26 is connected to a piping line 81 via an on-off valve 11 and a flow control unit 86 , and is also connected to a piping line 82 via an on-off valve 12 and a flow control unit 86 .

[0047] The second nozzle 27 is connected to a piping line 83 via an on-off valve 13 and a flow control unit 86 , and is also connected to a piping line 84 via an on-off valve 14 and a flow control unit 86 .

[0048] In this embodiment, a first arm 261 supporting a first nozzle 26 that discharges a high-temperature processing liquid and a second arm 271 supporting a second nozzle 27 that discharges a room-temperature processing liquid are provided separately.

[0049] Therefore, in the embodiment, compared to the case where the first nozzle 26 and the second nozzle 27 are provided on a single arm, it is possible to suppress a temperature increase of the room temperature processing liquid and a temperature decrease of the high temperature processing liquid. In other words, according to the embodiment, it is possible to reduce temperature variations of various processing liquids.

[0050] In the present disclosure, the configuration of the nozzles provided in liquid processing unit 2 is not limited to the example in FIG. 5, and liquid processing unit 2 may be provided with individual nozzles connected to piping lines 81 to 84, respectively.

[0051] Liquid processing unit 2 further includes cup 23 for receiving and discharging to the outside the chemical liquid shaken off from rotating wafer W. Cup 23 is an annular member provided to surround wafer W held on rotating plate 24, and can discharge the processing liquid therein via main discharge pipe 100 connected to the bottom surface.

[0052] The main discharge pipe 100 branches downstream and is connected to a discharge branch pipe 101 for discharging SC1 or DHF and a discharge branch pipe 102 for discharging DIW via opening and closing valves 15 and 16, respectively.

[0053] In addition, a casing 21 is provided outside the cup 23. An opening / closing door (not shown) is provided on the surface of the casing 21 facing the substrate transfer device 61 (see FIG. 2), and by opening this opening / closing door, the substrate transfer device 61 can enter the casing 21.

[0054] <Temperature control processing> Next, the temperature control process in liquid processing apparatus 1 according to the embodiment will be described in detail with reference to Figures 6 to 13. Figures 6 to 8 are diagrams for explaining the temperature control process of a plurality of liquid processing modules 7 according to the embodiment.

[0055] In the following example, the five liquid treatment modules 7 arranged horizontally will be referred to as liquid treatment modules M1 to M5 in order from one side. In addition, in the graph, the temperature indicated by the solid line is the current temperature of the heat source region 8, the temperature indicated by the dashed line is the past temperature of the heat source region 8, and the temperature indicated by the dashed dotted line is the predicted future temperature of the heat source region 8.

[0056] 6, variations in temperature may occur in the multiple heat source regions 8 (see FIG. 4) provided in each of liquid treatment modules M1 to M5. The variations in temperature in the multiple heat source regions 8 are due to, for example, differences in the installation locations of liquid treatment modules M1 to M5 (for example, differences in the positions of exhaust ducts or adjacent liquid treatment modules 7).

[0057] The temperature variations among the heat source regions 8 are caused by, for example, the difference in flow rate of the treatment liquid between upstream and downstream due to the shared use of piping lines 81-84 (see FIG. 4) among liquid treatment modules M1-M5.

[0058] Furthermore, the temperature variations among the plurality of heat source regions 8 are caused, for example, by differences in the timing of liquid treatment among liquid treatment modules M1 to M5 (for example, liquid treatment module 7 being stopped in maintenance mode).

[0059] Therefore, in this embodiment, controller 9 (see FIG. 2) individually controls a plurality of fans 92 (see FIG. 4) provided in each of liquid treatment modules M1 to M5. As a result, controller 9 controls the temperatures of all heat source regions 8 provided in liquid treatment modules M1 to M5 to fall within first temperature range R1, as shown in FIG.

[0060] The first temperature range R1 is an example of a given temperature range, for example, a range between temperature T1 and temperature T2. Furthermore, the control unit 9 measures the temperature of the heat source region 8 by a temperature sensor 91 (see FIG. 4).

[0061] Then, control unit 9 performs liquid processing on wafer W (see FIG. 5) only in liquid processing modules 7 where the temperature of heat source region 8 falls within first temperature range R1. In other words, control unit 9 does not perform liquid processing on wafer W in liquid processing modules 7 where the temperature of heat source region 8 does not fall within first temperature range R1.

[0062] This makes it possible to suppress large temperature variations in the liquid treatment among the plurality of liquid treatment modules 7 by performing the liquid treatment using liquid treatment modules 7 with large temperature variations in the heat source regions 8. That is, according to the embodiment, it is possible to reduce temperature variations in the liquid treatment among the plurality of liquid treatment modules 7.

[0063] In the above example, the control unit 9 does not perform liquid processing on the wafer W in the liquid processing module 7 where the temperature of the heat source region 8 is not within the first temperature range R1, but the present disclosure is not limited to such an example.

[0064] For example, in a liquid processing module 7 in which the temperature of the heat source region 8 is not within the first temperature range R1, the control unit 9 may discharge the processing liquid to a location other than the wafer W to be processed (for example, a dummy wafer or a processing liquid outlet).

[0065] This allows the processing liquid, which has been retained in the heat source region 8 for a long period of time and has become uneven in temperature, to be discharged from the piping lines 81 to 84, thereby reducing the temperature unevenness of the processing liquid to be discharged.

[0066] Furthermore, even after the temperatures of all heat source regions 8 have entered first temperature range R1, control unit 9 continues to individually control fans 92 to control the temperatures of each heat source region 8. In this embodiment, as shown in Fig. 8, the temperatures of all heat source regions 8 provided in liquid treatment modules M1 to M5 are made to approach the average temperature Ta of each heat source region 8.

[0067] This makes it possible to further reduce the temperature variation among the plurality of heat source regions 8, and therefore the temperature variation in the liquid treatment among the plurality of liquid treatment modules 7.

[0068] 8, controller 9 may control the temperatures of all heat source regions 8 provided in liquid treatment modules M1 to M5 to fall within second temperature range R2. Second temperature range R2 is included in first temperature range R1 and is a temperature range narrower than first temperature range R1 (for example, a range from temperature T3 to temperature T4).

[0069] This also makes it possible to further reduce the temperature variation among the plurality of heat source regions 8, and therefore the temperature variation in the liquid treatment among the plurality of liquid treatment modules 7.

[0070] 9 and 10 are diagrams illustrating another temperature control process for a plurality of liquid treatment modules 7 according to an embodiment. As shown in Fig. 9, even if the temperatures of all heat source regions 8 are currently within the first temperature range R1, the temperatures of at least some of the heat source regions 8 may fall outside the first temperature range R1 in the future depending on the expected operating rate of each module.

[0071] 9, the planned operation rates of liquid treatment modules M2 and M3 are high, so it is predicted that the temperature of heat source region 8 will deviate from first temperature range R1 in the future. In particular, in the example of FIG. 9, it is predicted that the temperature of heat source region 8 of liquid treatment module M3 will deviate significantly from first temperature range R1 in the future.

[0072] Therefore, in this embodiment, controller 9 first determines the expected operating rates of liquid treatment modules M1 to M5 based on the schedule of liquid treatments scheduled for liquid treatment modules M1 to M5.

[0073] Next, control unit 9 predicts the future temperatures of heat source regions 8 in liquid treatment modules M1-M5 based on the calculated expected operating rates of liquid treatment modules M1-M5. Then, control unit 9 individually controls fans 92 provided in each of liquid treatment modules M1-M5 based on the predicted future temperatures of heat source regions 8, as shown in FIG.

[0074] For example, in the example of Figure 10, since the planned operating rate is high, it is predicted that the temperature of the heat source region 8 of the liquid treatment module M3 will fall significantly outside the first temperature range R1, so the control unit 9 controls the fan 92 of the liquid treatment module M3 to a high rotation speed.

[0075] On the other hand, since the planned operating rate is low, it is predicted that the temperature of the heat source region 8 of the liquid treatment module M1 will not fall outside the first temperature range R1, and therefore the control unit 9 controls the fan 92 of the liquid treatment module M1 to a low rotation speed.

[0076] In this manner, in an embodiment, the future temperature of the heat source region 8 may be predicted based on the planned operating rates of the liquid treatment modules M1 to M5, and the fans 92 provided in each of the liquid treatment modules M1 to M5 may be individually controlled based on the predicted future temperature of the heat source region 8.

[0077] This makes it possible to reduce temperature variations in liquid treatment among the plurality of liquid treatment modules 7, even when the operating rates among the plurality of liquid treatment modules 7 vary greatly.

[0078] 11 and 12 are diagrams illustrating yet another temperature control process for the plurality of liquid treatment modules 7 according to the embodiment. As shown in Fig. 11, the ease of cooling of the plurality of heat source regions 8 (see Fig. 4) provided in each of the liquid treatment modules M1 to M5 may vary.

[0079] This variation in ease of cooling among the plurality of heat source regions 8 is due to, for example, differences in the installation locations of liquid treatment modules M1 to M5 (for example, differences in the positions of exhaust ducts or adjacent liquid treatment modules 7).

[0080] Furthermore, the variation in ease of cooling among the plurality of heat source regions 8 is due to, for example, the difference in flow rate between the upstream and downstream sides due to the piping lines 81-84 being shared by the liquid treatment modules M1-M5.

[0081] Furthermore, the variation in ease of cooling among the plurality of heat source regions 8 is due to, for example, differences in the timing of liquid treatment among liquid treatment modules M1 to M5 (for example, liquid treatment module 7 being stopped in maintenance mode).

[0082] In the embodiment, since there is a difference in ease of cooling among the plurality of heat source regions 8, even if the fans 92 are rotated at the same rotation speed in each module, there is a possibility that the modules may not be cooled in the same manner.

[0083] For example, in the example of FIG. 11, liquid treatment module M3 is difficult to cool, and therefore it is predicted that liquid treatment module M3 will not easily fall into first temperature range R1 even if fan 92 is rotated at the same rotation speed as the other liquid treatment modules 7.

[0084] Therefore, in the embodiment, control unit 9 first determines how easily each of heat source regions 8 provided in liquid treatment modules M1 to M5 cools. For example, in the embodiment, during the standby time of liquid treatment modules M1 to M5, the airflow rate of fan 92 is set to a constant for all piping lines, and the temperature drop is measured by temperature sensor 91, thereby determining how easily each of heat source regions 8 cools.

[0085] Next, control unit 9 individually controls fans 92 provided in each of liquid treatment modules M1 to M5 based on the calculated ease of cooling of heat source region 8.

[0086] 12, since it is determined that the heat source area 8 of the liquid treatment module M3 is difficult to cool, the control unit 9 controls the fan 92 of the liquid treatment module M3 to a high rotation speed. On the other hand, since it is determined that the heat source area 8 of the liquid treatment module M1 is easy to cool, the control unit 9 controls the fan 92 of the liquid treatment module M1 to a low rotation speed.

[0087] In this manner, in the embodiment, the fans 92 provided in each of the liquid treatment modules M1 to M5 may be individually controlled based on how easily the heat source regions 8 in the liquid treatment modules M1 to M5 cool.

[0088] This makes it possible to reduce temperature variations in the liquid treatment among the plurality of liquid treatment modules 7, even if the ease with which heat source regions 8 cool varies among the plurality of liquid treatment modules 7.

[0089] 13 is a diagram illustrating the exhaust process of a plurality of liquid treatment modules 7 according to an embodiment. A plurality of heat source regions 8 arranged side by side in the horizontal direction are configured as a group of heat source regions 8A that are connected to each other as shown in FIG.

[0090] Furthermore, liquid treatment apparatus 1 according to this embodiment has outlet 93 for discharging the atmosphere within group of heat source regions 8A, which prevents the atmosphere within heat source region 8 from leaking out from unexpected locations when the volume of air supplied to heat source region 8 by fan 92 increases.

[0091] In addition, in the embodiment, the control unit 9 may control the amount of exhaust air from the exhaust port 93 according to the rotation speed of the multiple fans 92. For example, the control unit 9 may adjust the opening degree of the exhaust port 93 according to the rotation speed of the multiple fans 92. This allows the pressure environment in the heat source region 8 to be constant.

[0092] The substrate processing apparatus (liquid processing apparatus 1) according to this embodiment includes multiple liquid processing modules 7 and a controller 9. The multiple liquid processing modules 7 are arranged in a row at least in one of the horizontal and vertical directions and supply a processing liquid to a substrate (wafer W) to perform liquid processing. The controller 9 controls each component. The liquid processing module 7 includes a liquid processing unit 2, a heat source region 8, a temperature sensor 91, and a fan 92. The liquid processing unit 2 performs liquid processing on the substrate (wafer W). The heat source region 8 includes a heat source (piping line 81, piping line 82, control board 87). The temperature sensor 91 measures the temperature of the heat source region 8. The fan 92 cools the heat source region 8. The controller 9 individually controls the multiple fans 92 so that the temperatures of the multiple heat source regions 8 are all within a given temperature range (first temperature range R1). This reduces temperature variations during liquid processing among the multiple liquid processing modules 7.

[0093] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, heat source region 8 has piping lines 81-84, through which processing liquid flows, that are arranged across multiple liquid processing modules 7. This simplifies the configuration of piping lines 81-84 compared to the case where individual piping lines are connected to individual liquid processing modules 7, respectively.

[0094] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, controller 9 does not perform liquid processing on substrates (wafers W) in liquid processing modules 7 having heat source regions 8 outside a given temperature range (first temperature range R1). This makes it possible to suppress a decrease in yield of wafers W due to defective liquid processing.

[0095] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, in liquid processing module 7 having heat source region 8 outside a given temperature range (first temperature range R1), controller 9 discharges the processing liquid to a location other than the substrate (wafer W). This makes it possible to suppress a decrease in yield of wafers W due to defective liquid processing.

[0096] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, when all heat source regions 8 are within a given temperature range (first temperature range R1), control unit 9 individually controls multiple fans 92, using the average temperature Ta of all heat source regions 8 as a target value. This makes it possible to further reduce temperature variations in liquid processing among multiple liquid processing modules 7.

[0097] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, controller 9 controls fan 92 based on a preset processing schedule for substrates (wafers W), even when heat source region 8 is within a given temperature range (first temperature range R1). This makes it possible to reduce temperature variations in liquid processing among multiple liquid processing modules 7, even when the operating rates among multiple liquid processing modules 7 vary greatly.

[0098] Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, control unit 9 individually controls multiple fans 92 depending on how easily each heat source region 8 cools. This makes it possible to reduce temperature variations in liquid processing among multiple liquid processing modules 7 even if the ease with which heat source regions 8 cool varies among multiple liquid processing modules 7.

[0099] Moreover, the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment further includes an exhaust port 93 that exhausts the atmosphere of the plurality of heat source regions 8. Furthermore, the control unit 9 controls the amount of exhaust air from the exhaust port 93 in accordance with the rotation speed of the plurality of fans 92. This makes it possible to maintain a constant pressure environment in the heat source region 8.

[0100] <Temperature control process procedure> Next, the procedure of the temperature control process according to the embodiment will be described with reference to Fig. 14. Fig. 14 is a flowchart showing the procedure of the temperature control process executed by liquid processing apparatus 1 according to the embodiment.

[0101] In the temperature processing according to the embodiment, first, the control unit 9 determines whether the temperatures of all the heat source regions 8 are within the first temperature range R1 (step S101). If the temperatures of at least some of the heat source regions 8 are not within the first temperature range R1 (step S101, No), the control unit 9 individually controls the fans 92 so that the temperatures of all the heat source regions 8 are within the first temperature range R1 (step S102).

[0102] Next, the control unit 9 determines whether the temperatures of all heat source regions 8 are within the first temperature range R1 (step S103). If the temperatures of at least some of the heat source regions 8 are not within the first temperature range R1 (step S103, No), the control unit 9 determines whether a given time (e.g., 60 seconds) or more is required to bring the temperatures into the first temperature range R1 (step S104).

[0103] If a time longer than the given time is required to bring the temperature into the first temperature range R1 (Yes in step S104), the control unit 9 discharges the processing liquid to a location other than the wafer W in the liquid processing module 7 having the heat source region 8 (step S105). Then, the control unit 9 ends the series of temperature control processes.

[0104] On the other hand, if a time longer than the given time is not required to enter the first temperature range R1 (step S104, No), the control unit 9 returns to the process of step S102.

[0105] Furthermore, if the temperatures of all heat source regions 8 are within the first temperature range R1 in the process of step S101 (Yes in step S101), the control unit 9 sets the average temperature Ta of all heat source regions 8 as a target value and controls the fans 92 individually (step S106). Then, the control unit 9 ends the series of temperature control processes.

[0106] Furthermore, in the process of step S103, if the temperatures of all the heat source regions 8 are within the first temperature range R1 (step S103, Yes), the control unit 9 proceeds to the process of step S106.

[0107] The substrate processing method according to the embodiment includes a step of individually controlling the fans 92 in the liquid processing apparatus 1 so that the temperatures of the heat source regions 8 are all within a given temperature range (first temperature range R1). This reduces temperature variations in the liquid processing among the liquid processing modules 7.

[0108] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0109] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0110] W wafer (an example of a substrate) 1. Liquid processing equipment (an example of a substrate processing equipment) 2 liquid processing unit 7. M1~M5 liquid treatment modules 8 Heat source area 9 Control Unit 81, 82 Piping line (example of heat source) 87 Control board (example of heat source) 91 Temperature Sensor 92 fans R1 First temperature range (an example of a predetermined temperature range) Ta average temperature

Claims

1. a plurality of liquid processing modules arranged side by side in at least one of a horizontal direction and a vertical direction, and supplying a processing liquid to a substrate to perform liquid processing; a control unit that controls each unit; Equipped with The liquid treatment module comprises: a liquid processing unit for performing liquid processing on the substrate; a heat source region having a heat source below the liquid treatment unit; a fan located near the heat source region and configured to blow external atmosphere toward the heat source region to cool the heat source region; a temperature sensor for measuring the temperature of the heat source region; and The control unit individually controlling the plurality of fans so that the temperatures of the plurality of heat source regions all fall within a given temperature range; In the liquid processing module having the heat source region outside the given temperature range, the processing liquid is discharged to a location other than the substrate. Substrate processing equipment.

2. The control unit When all of the heat source regions are within the given temperature range, the plurality of fans are individually controlled with the average temperature of all of the heat source regions as a target value. The substrate processing apparatus according to claim 1 .

3. The control unit Based on a preset processing schedule for the substrate, the fan is controlled even when the heat source region is within the given temperature range. The substrate processing apparatus according to claim 1 or 2.

4. The control unit During the standby time of the plurality of liquid treatment modules, the airflow rates of the plurality of fans are all kept constant, and the plurality of fans are individually controlled in accordance with the ease of cooling of each of the heat source regions determined by measuring the degree of temperature drop of the plurality of heat source regions with the plurality of temperature sensors, so that the rotation speed of the fan cooling the heat source region determined to be difficult to cool is higher than the rotation speed of the fan cooling the heat source region determined to be easy to cool. The substrate processing apparatus according to any one of claims 1 to 3.

5. Further, the heating element further includes a plurality of exhaust ports for exhausting the atmosphere of the heat source region, The control unit The amount of exhaust air from the exhaust port is controlled according to the rotation speed of the plurality of fans. The substrate processing apparatus according to any one of claims 1 to 4.

6. The heat source region is A piping line is provided across the plurality of liquid treatment modules, through which the treatment liquid flows. The substrate processing apparatus according to any one of claims 1 to 5.

7. A substrate processing apparatus comprising a plurality of liquid processing modules arranged side by side in at least one of a horizontal direction and a vertical direction, and supplying a processing liquid to a substrate to perform liquid processing, each liquid processing module including: a liquid processing unit that performs liquid processing on the substrate; a heat source region having a heat source; a temperature sensor that measures the temperature of the heat source region; and a fan that is located near the heat source region and cools the heat source region by blowing external atmosphere toward the heat source region, individually controlling the plurality of fans so that the temperatures of the plurality of heat source regions all fall within a given temperature range; discharging a processing liquid to a location other than the substrate in the liquid processing module having the heat source region outside the given temperature range; A substrate processing method comprising:

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