Display device

Abstract

To provide a large-sized semiconductor device that operates at high speed.SOLUTION: A top gate-type transistor having a monocrystal semiconductor layer and a bottom gate-type transistor having an amorphous silicon (or microcrystal silicon) semiconductor layer are formed on the same substrate. The gate wire that each of the transistors includes is formed in the same layer, and the source and drain electrodes likewise are formed in the same layer. In this way, the manufacturing steps are cut back. Thus, by only adding a few steps to the manufacturing process of bottom gate-type transistors, it is possible to manufacture two types of transistors.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to an article, a method, or a method for producing an article, in particular a display device or a semiconductor device. In particular, it relates to a display device or a semiconductor device formed by transferring a single crystal onto a glass substrate. Regarding the device. [Background technology]

[0002] In recent years, flat panels such as liquid crystal displays and electroluminescence (EL) displays have become The display is attracting attention.

[0003] There are two driving methods for flat panel displays: passive matrix and active matrix. The active matrix method is different from the passive matrix method. Compared to conventional LCDs, it has the advantage of lower power consumption, higher resolution, and larger substrates. .

[0004] In the case of a configuration in which a driving circuit is provided outside the panel, a single crystal silicon is used as the driving circuit. Since it is possible to use ICs that use the same technology, there are no problems caused by the speed of the driver circuit. However, when installing an IC in this way, it is necessary to prepare the panel and the IC separately. The cost is reduced significantly due to the need for a process to connect the panel and IC. I couldn't.

[0005] Therefore, from the viewpoint of cost reduction, a method of forming the pixel section and the driving circuit section integrally is used. It has become possible to do so (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 8-6053 Summary of the Invention [Problem to be solved by the invention]

[0007] In the case of Patent Document 1, the semiconductor layer of the driver circuit is made of amorphous silicon, just like the pixel section. Non-monocrystalline silicon such as silicon dioxide, microcrystalline silicon, and polycrystalline silicon are used. However, when using amorphous silicon, microcrystalline silicon, or polycrystalline silicon, However, there is a problem that the characteristics are far inferior to those of single crystal silicon. In particular, the semiconductor layer used in the conventional panel with integrated driving circuit has a necessary and sufficient transfer function. Therefore, when manufacturing a semiconductor device that requires high-speed operation, such as a driver circuit, This has become a major problem.

[0008] In view of the above problems, an object of the present invention is to provide a semiconductor device with reduced cost. Another object of the present invention is to provide a semiconductor device provided with a circuit capable of high-speed operation. Another object is to provide a semiconductor device with low power consumption. [Means for solving the problem]

[0009] In the present invention, the silicon layer is separated (peeled) from the single crystal substrate and then attached to a glass substrate. Alternatively, a single crystal substrate is attached to a glass substrate and then separated. A silicon layer is formed on the glass substrate by this process. Then, the silicon layer is separated from the single crystal substrate again and placed on a glass substrate. Alternatively, the single crystal substrate can be attached to a glass substrate and then separated. Then, the silicon layer is again formed on the glass substrate by isolating the silicon layer. It is processed into a bond shape.

[0010] Then, using these silicon layers, TFTs are formed on the glass substrate.

[0011] At the same time, amorphous silicon or microcrystalline silicon was used. The TFT is also formed.

[0012] In these TFTs, a conductive layer that functions as a gate electrode, a source electrode, a drain electrode, and a The conductive layer that functions as the drain electrode is shared and deposited simultaneously. This reduces the number of manufacturing steps. can be reduced.

[0013] The present invention has a first semiconductor layer above an insulating substrate, and a first insulating film above the first semiconductor layer. The first and second conductive layers are disposed above the first insulating layer. a second insulating layer above the conductive layer, a second semiconductor layer above the second insulating layer, and a second A third conductive layer is disposed above the semiconductor layer, a fourth conductive layer is disposed above the second insulating layer, and the third and a third insulating layer above the fourth conductive layer, and a fifth conductive layer above the third insulating layer. The first semiconductor layer functions as an active layer of the first transistor, and the second semiconductor layer The semiconductor layer functions as an active layer of the second transistor, and the first semiconductor layer and the second semiconductor layer It is characterized by different properties of the body layers.

[0014] In the above-mentioned configuration, the present invention is characterized in that the first insulating layer is a gate insulating layer of the first transistor. The first conductive layer functions as a gate electrode of the first transistor. It is characterized by having:

[0015] In the above-mentioned configuration, the present invention is characterized in that the second insulating layer is a gate insulating layer of the second transistor. The first conductive layer functions as a gate electrode of the second transistor. It is characterized by the fact that

[0016] In the above-mentioned configuration, the present invention is characterized in that the fifth conductive layer is a contact provided on the third insulating layer. It is characterized by being electrically connected to the fourth conductive layer via a hole.

[0017] In the above-mentioned configuration, the present invention is characterized in that the fifth conductive layer is a first insulating layer, a second insulating layer, a third insulating layer, a The insulating layer is electrically connected to the first semiconductor layer through a contact hole formed in the insulating layer. It is characterized by the fact that

[0018] In the above-mentioned configuration, the present invention is characterized in that the third conductive layer is electrically connected to the second semiconductor layer. It is characterized by the presence of

[0019] The present invention is characterized in that, in the above-mentioned configuration, the first semiconductor layer has crystallinity. There are.

[0020] In the above-mentioned configuration, the present invention is characterized in that the second semiconductor layer has an amorphous semiconductor. It is characterized by:

[0021] In the above-mentioned configuration, the present invention is characterized in that the second semiconductor layer has a microcrystalline semiconductor. It is characterized by the fact that

[0022] In this specification, various types of switches can be used. Examples include electrical switches and mechanical switches, which are devices that can control the flow of current. It is not limited to a specific type of switch. For example, a transistor can be used as a switch. transistors (e.g., bipolar transistors, MOS transistors, etc.), diodes (e.g., , PN diode, PIN diode, Schottky diode, MIM (Metal Metal Insulator Diode, MIS (Metal Insulator) r Semiconductor) diode, diode-connected transistor, etc. A thyristor or the like can be used. Or, a logic circuit that combines these can be used as a switch. It can be used as a chi.

[0023] An example of a mechanical switch is a digital micromirror device (DMD). There are switches that use MEMS (microelectromechanical systems) technology. The switch has an electrode that can be moved mechanically, and the movement of the electrode The connection and disconnection are controlled by this.

[0024] When a transistor is used as a switch, the transistor acts as a simple switch. However, the polarity (conductivity type) of the transistor is not particularly limited. To suppress this, it is desirable to use a transistor with a polarity that has a smaller off-state current. Transistors with low leakage current include transistors with LDD regions and multi-gate There are transistors with a structure, or transistors that operate as switches. The source terminal operates in a state where the potential is close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). It is desirable to use an N-channel transistor when operating the When the potential is close to the potential of the high-potential power supply (such as Vdd), a P-channel transistor is used. It is desirable to use an N-channel transistor because the source terminal When a P-channel transistor operates at a potential close to that of the low-potential power supply, When the gate terminal is operated near the high-potential power supply, the voltage between the gate and source This is because the resistance can be increased, allowing the switch to operate more accurately. Since the source follower operation is less likely to occur, the output voltage is smaller. This is because there is little chance of this happening.

[0025] In addition, both N-channel and P-channel transistors are used to An S-type switch can be used as the switch. If a CMOS-type switch is used, the P channel Either an N-channel transistor or an N-channel transistor is used. When the wire is passed through, current flows, making it easier to function as a switch. Whether the voltage of the input signal is high or low, the voltage can be output appropriately. Furthermore, the voltage amplitude of the signal used to turn the switch on or off can be reduced. Therefore, power consumption can also be reduced.

[0026] When a transistor is used as a switch, the switch is connected to the input terminal (source terminal or drain terminal), and an output terminal (the other of the source terminal or drain terminal), It has a terminal (gate terminal) that controls conduction. On the other hand, it has a diode as a switch. When using a switch, the switch may not have a terminal for controlling conduction. Using diodes as switches rather than transistors reduces the wiring required to control the terminals. It can be reduced.

[0027] In this specification, when it is explicitly stated that A and B are connected, A When A and B are electrically connected, when A and B are functionally connected, and when A and B are This includes the case where A and B are directly connected. (e.g., device, element, circuit, wiring, electrode, terminal, conductive film, layer, etc.) The specific connection relationships, for example, are not limited to the connection relationships shown in the drawings or text, but are not limited to the connection relationships shown in the drawings or text. Connections other than those shown are also included.

[0028] For example, if A and B are electrically connected, the electrical connection between A and B can be The elements that function as One or more cations (e.g., cations) may be placed between A and B. Alternatively, one or more cations (e.g., cations) may be placed between A and B. When A and B are functionally connected, a circuit (e.g. For example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits , step-down circuits, level shifter circuits that change the potential level of signals, voltage sources, current sources , switching circuits, amplifier circuits (circuits that can increase signal amplitude or current, etc.), operational amplifiers , differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, One or more circuits (such as a control circuit) may be arranged between A and B. When A and B are directly connected, without any other elements or circuits between them, B may be directly connected.

[0029] In addition, when it is explicitly stated that A and B are directly connected, it means that A and B are directly connected. (i.e., A and B are connected without any other elements or circuits in between.) When A and B are electrically connected (i.e., there is another This includes cases where the device is connected via an element or another circuit.

[0030] When it is explicitly stated that A and B are electrically connected, it means that A and B are electrically connected. When A and B are electrically connected (i.e., when another element or circuit is placed between A and B), A and B are functionally connected (i.e., there is no other connection between A and B) and B are functionally connected (i.e., there is no other connection between A and B). When A and B are connected functionally through a circuit) and when A and B are connected directly ( In other words, A and B are connected without any other element or circuit between them. In other words, when explicitly stating that something is electrically connected, it simply means that it is connected. is the same as if it were expressly stated only that it is

[0031] The display element, the display device having the display element, the light-emitting ... A light-emitting device, which is a device having a light element, can be of various forms and can be made of various elements. For example, it can be used as a display element, a display device, a light-emitting element, or a light-emitting device. is an EL (electroluminescence) element (EL element including organic and inorganic materials, organic EL EL elements, inorganic EL elements), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, gray Light bulbs (GLV), plasma displays (PDP), digital micro Mirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc. A display medium whose contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic effects. Display devices using EL elements include EL displays, Display devices using electron emission elements include field emission displays (FEDs) and SED type flat panel display (SED: Surface-conduction El As a display device using liquid crystal elements, such as a chromium-emitter display LCD displays (transmissive LCD displays, semi-transmissive LCD displays, reflective LCD displays) displays, direct-view LCD displays, projection LCD displays), electronic ink and An example of a display device using electrophoretic elements is electronic paper.

[0032] The EL element has an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. The EL layer is made up of a material that utilizes light emission (fluorescence) from singlet excitons, Some utilize light emission from triplet excitons (phosphorescence), while others utilize light emission from singlet excitons (fluorescence). Some utilize light emission from triplet excitons (phosphorescence), while others utilize organic materials. formed by inorganic matter, formed by organic matter, Materials formed by inorganic substances, including polymeric materials, low molecular weight materials, polymeric materials However, the present invention is not limited to this, and examples thereof include those containing a polymeric material and a low molecular weight material. A variety of EL elements can be used.

[0033] An electron-emitting device is an element that extracts electrons by concentrating a high electric field on a sharp cathode. For example, electron-emitting devices include Spindt type, carbon nanotube (CNT) type, metal-insulating type, MIM (Metal-Insulator-Metal) type with metal laminated body and metal MIS (Metal-Insulator-Semiconductor) conductor type, MOS type, silicon type, thin film diode type, diamond type, surface conduction However, it is not limited to this, and electron emission A variety of elements can be used.

[0034] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. It is an element that consists of a pair of electrodes and liquid crystal. The optical modulation action of the liquid crystal is as follows: Controlled by the electric field applied to the liquid crystal (including the horizontal electric field, vertical electric field, or diagonal electric field) The liquid crystal element is controlled by nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, Liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, lyotropic liquid crystal Pick liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain liquid crystal, side chain liquid crystal Examples include polymer liquid crystal, plasma addressed liquid crystal (PDLC), banana-shaped liquid crystal, etc. The liquid crystal driving method is TN (Twisted Nematic) mode, STN (S Super Twisted Nematic mode, IPS (In-Plane-Switched) mode Fringe Field Switching (FFS) mode mode, MVA (Multi-domain Vertical Alignment) mode mode, PVA (Patterned Vertical Alignment) mode, ASV (Advanced Super View) mode, ASM (Axially Symmetric aligned Micro-cell mode, OCB (Opt ical Compensated Birefringence mode, ECB (E Controlled Birefringence) mode , FLC (Ferroelectric Liquid Crystal) mode, AF LC (AntiFerroelectric Liquid Crystal) mode, PDLC (Polymer Dispersed Liquid Crystal) mode However, it is not limited to this and the LCD element can be used in various modes. Various elements and drive methods can be used.

[0035] In addition, electronic paper is displayed by molecules such as optical anisotropy and dye molecule orientation. those displayed by particles such as electrophoresis, particle migration, particle rotation, phase change, Some are displayed by the movement of one edge of the film, while others are displayed by the coloring / phase change of molecules. Some are displayed by molecular light absorption, and others are displayed by spontaneous light emission caused by electron-hole combinations. For example, electronic paper is a type of device that uses microcapsule electrophoresis. Movement, horizontally moving electrophoresis, vertically moving electrophoresis, spherical twist ball, magnetic twist ball cylindrical twist ball type, charged toner, electronic liquid powder, magnetic migration type, magnetic thermal type, Ultrawetting, light scattering (transparent / cloudy change), cholesteric liquid crystal / photoconductive layer, Dichroic liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal, dichroic dye / liquid crystal dispersion type, Movable film, color development and fading by leuco dye, photochromic, electrochromic, electro Electrodeposition, flexible organic EL, etc. can be used. The electronic paper is not limited to the above, and various types can be used. By using capsule-type electrophoresis, the drawbacks of the electrophoretic method, such as aggregation of electrophoretic particles, It can solve the problem of precipitation. Electronic liquid powder has fast response, high reflectivity, wide viewing angle, and low power consumption. It has advantages such as low power consumption and memory capacity.

[0036] A plasma display consists of a substrate with electrodes formed on its surface and a display panel with electrodes and minute grooves. A substrate having a surface on which a phosphor layer is formed and a groove on which a phosphor layer is formed is placed opposite to the substrate at a narrow interval, and a rare gas is sealed in the substrate. By applying a voltage between the electrodes, ultraviolet light is generated, and the fluorescent material The display can be made by illuminating the plasma display. The plasma display panel may be an A-type PDP or an AC-type PDP. SW (Address While Sustain) drive, subframe reset period ADS (Address Display Sector) is divided into a period, an address period, and a sustain period. parated) drive, CLEAR (High-Contrast, Low Energy gy Address and Reduction of False Contou r Sequence) drive, ALIS (Alternate Lighting of Surfaces) method, TERES (Technology of Recipro However, it is not limited to this. In addition, various types of plasma displays can be used.

[0037] In addition, display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays), Transflective LCD displays, reflective LCD displays, direct-view LCD displays, projection LCD displays projection type liquid crystal display, display device using grating light valve (GLV), As a light source for a display device using a digital micromirror device (DMD), Uses thermoluminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. However, the light source is not limited to this, and various light sources can be used. do.

[0038] Note that various types of transistors can be used. There is no limitation on the type of transistor used. For example, amorphous silicon, polycrystalline silicon, Non-crystalline silicon, such as microcrystalline (also called semi-amorphous) silicon, A thin film transistor (TFT) having a single crystal semiconductor film can be used. There are various advantages to using silicon dioxide. For example, it can be grown at a lower temperature than single crystal silicon. This allows for reduction in manufacturing costs and the use of larger manufacturing equipment. Since the size of the display can be increased, it can be manufactured on a large substrate. Furthermore, since the manufacturing temperature is low, there is no need to worry about the heat resistance of the device. Therefore, a transparent substrate (a substrate having optical transparency) can be used. Then, the transistor on the substrate can be used to control the transmission of light through the display element. Alternatively, since the film thickness of the transistor is thin, it is possible to control the The part of the film that is covered by the reflective layer can transmit light, which improves the aperture ratio. Cut.

[0039] In addition, when producing polycrystalline silicon, by using a catalyst (such as nickel), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit) and the source driver circuit (signal line driver circuit) ), signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) are integrated on the board It can be formed.

[0040] In addition, when manufacturing microcrystalline silicon, by using a catalyst (nickel, etc.), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and the gate driver The driver circuit (scanning line driving circuit) can be formed integrally on the substrate. Therefore, when laser irradiation is not performed, unevenness in the crystallinity of silicon can be suppressed. Therefore, it is possible to display an image with improved quality.

[0041] However, polycrystalline silicon and microcrystalline silicon can be produced without using a catalyst (such as nickel). It is possible to do so.

[0042] In addition, improving the crystallinity of silicon to polycrystalline or microcrystalline can improve the overall panel performance. It is desirable to do this on the whole body, but it is not limited to this. The crystallinity of the silicon may be improved. For example, the peripheral circuit area, which is an area other than the pixel area, can be selectively irradiated. Alternatively, the gate driver circuit, the source driver circuit, and the Alternatively, the laser light may be irradiated only on the area of ​​the source driver circuit. Alternatively, the laser light may be irradiated only on the area of ​​the semiconductor device (for example, an analog switch). Therefore, it is possible to improve the crystallization of silicon only in areas where high-speed circuit operation is required. Since there is little need for high-speed operation in the pixel area, the crystallinity can be improved without any need for improvement. The pixel circuit can be operated without any problems. This allows the manufacturing process to be shortened, improving throughput and reducing manufacturing costs. In addition, the number of manufacturing devices required is reduced, which reduces manufacturing costs. It is possible to do this.

[0043] Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. These features result in a product with little variation in characteristics, size, shape, etc., a high current supply capacity, and a These transistors allow the fabrication of low-noise transistors. This allows for lower power consumption and higher circuit integration.

[0044] Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO and transistors having compound semiconductors or oxide semiconductors such as these. A thin film transistor formed by thinning a compound semiconductor or an oxide semiconductor can be used. These allow the manufacturing temperature to be lowered, making it possible to manufacture transistors at room temperature, for example. As a result, direct transfer to a substrate with low heat resistance, such as a plastic substrate or a film substrate, is difficult. These compound semiconductors or oxide semiconductors can be used to form transistors. It can be used not only for the channel portion of a transistor but also for other purposes. For example, these compound semiconductors or oxide semiconductors can be used as resistor elements, pixel electrodes, transparent electrodes, etc. Furthermore, they can be formed as films or layers at the same time as transistors. This reduces costs.

[0045] Alternatively, a transistor formed by inkjet or printing can be used. These allow fabrication at room temperature, in low vacuum, or on large substrates. Since it is possible to manufacture without using a mask (reticle), The layout can be easily changed. Furthermore, since there is no need to use a resist, This reduces material costs and the number of processes. Furthermore, since the film is applied only to the necessary parts, This method is less wasteful and less costly than the method of etching after forming a film on the entire surface. can be done.

[0046] Alternatively, transistors having organic semiconductors or carbon nanotubes can be used. This allows transistors to be formed on a flexible substrate. Therefore, devices using transistors with organic semiconductors or carbon nanotubes can be resistant to shock.

[0047] Furthermore, transistors of various structures can be used. For example, MOS transistors The transistors used may be junction transistors, bipolar transistors, etc. By using MOS transistors, the size of the transistors can be reduced. Therefore, a large number of transistors can be mounted. By using a transistor, a large current can be passed through. It can be made to work.

[0048] In addition, MOS transistors, bipolar transistors, etc. can be mixed on one substrate. This can achieve low power consumption, miniaturization, high-speed operation, etc. do.

[0049] In addition, various other transistors can be used.

[0050] Note that a transistor can be formed using various substrates. The substrate on which the transistor is formed is not limited to a specific one. Crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane Substrate, stone substrate, wood substrate, fabric substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyester) polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon, regenerated polyester), leather substrate, rubber substrate, stainless steel substrate, stainless steel Alternatively, a substrate with a steel foil or other suitable material can be used. The skin (epidermis, dermis) or subcutaneous tissue may be used as a substrate. A transistor is formed, and then the transistor is transferred to another substrate. The substrate on which the transistor is transferred may be a single crystal substrate, an SOI Substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, , wood substrate, fabric substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester) etc.), leather substrate, rubber substrate, stainless steel substrate, stainless steel white Alternatively, a substrate having a film such as the skin (epidermis, dermis) of an animal such as a human may be used. The skin or subcutaneous tissue may be used as a substrate. Alternatively, a substrate may be used to mount the transistor. The substrate to be polished may be a single crystal substrate, a silicon dioxide substrate, or a silicon dioxide film. OI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate Boards, wood substrates, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, Polyester) or recycled fiber (acetate, cupra, rayon, recycled polyester) ) including leather substrates, rubber substrates, stainless steel substrates, stainless steel substrates A substrate having a foil or the like can be used. Alternatively, the skin (epidermis, The dermis or subcutaneous tissue may be used as the substrate. Formation of high-performance transistors, formation of low-power-consumption transistors, and fabrication of durable devices It is possible to improve the structure, provide heat resistance, and reduce the weight or thickness.

[0051] The structure of the transistor can take various forms and is not limited to a specific structure. For example, a multi-gate structure with two or more gate electrodes can be applied. When the gate structure is used, the channel regions are connected in series, so multiple transistors are connected in series. The multi-gate structure reduces the off-state current and improves the transistor's durability. The reliability can be improved by increasing the voltage. When operating in the sum region, the drain-source current remains constant even if the drain-source voltage is changed. The voltage-current characteristic does not change much and has a flat slope. By utilizing the voltage-current characteristics of the lattice, ideal current source circuits and circuits with very high resistance values ​​can be created. As a result, it is possible to realize an active load with good characteristics, such as a differential circuit or a current mirror. The circuit can be realized.

[0052] As another example, a structure in which gate electrodes are arranged above and below the channel can be applied. By using a structure in which gate electrodes are arranged above and below the channel, the channel region The area increases, which increases the current value or reduces the S value due to the tendency for a depletion layer to form. By arranging gate electrodes above and below the channel, multiple The configuration is such that the above transistors are connected in parallel.

[0053] A structure in which a gate electrode is disposed above a channel region, and a structure in which a gate electrode is disposed below a channel region The structure in which the channel region is divided into multiple regions is also available. a structure in which the channel regions are connected in parallel, or a structure in which the channel regions are connected in series Furthermore, the channel region (or a part thereof) can be provided with a source electrode or a drain electrode. A structure in which the source electrode and drain electrode are overlapped can also be applied. By using a structure in which the drain electrodes overlap, charges accumulate in part of the channel region. This can further prevent the operation from becoming unstable. Alternatively, an LDD region may be provided. By providing an LDD region, the off-current can be reduced or the breakdown voltage of the transistor can be improved. The reliability can be improved. Alternatively, by providing an LDD region, the saturation region When operating at 1000 kHz, even if the drain-source voltage changes, the drain-source current remains constant. This allows for voltage-current characteristics that do not change and have a flat slope.

[0054] Note that various types of transistors can be used and can be formed using various substrates. Therefore, all the circuits required to realize a given function can be simultaneously For example, it is possible to form the circuit necessary to realize a predetermined function on a single substrate. All of the circuits are made on various substrates such as glass, plastic, single crystal, or SOI. It is also possible to form the circuit using a substrate that is necessary to realize a predetermined function. All components are formed using the same substrate, reducing the number of components and reducing costs. Alternatively, the reliability can be improved by reducing the number of connection points with the circuit components. A part of the circuit required to realize a specific function is formed on a certain substrate, and the specific function is Other parts of the circuitry required for realization may be formed on other substrates. In other words, all of the circuits required to realize a given function are formed using the same substrate. For example, some of the circuits required to realize a specific function may be The transistors on the substrate form another circuit necessary to realize a specific function. Some are formed on single crystal substrates and consist of transistors formed using single crystal substrates. The IC chip is then connected to the glass substrate using COG (Chip On Glass). The IC chip can be placed on the substrate. B (Tape Automated Bonding) or printed circuit boards are used to bond glass substrates. In this way, part of the circuit is formed on the same substrate. This reduces costs by reducing the number of components, and reduces the number of connections to circuit components. It is possible to improve reliability. Alternatively, it is possible to improve reliability by reducing the number of parts with high drive voltages and high drive frequencies. The power consumption of the circuitry in the part is large, so the circuitry in such part should be on the same board. Instead, for example, a circuit for that part is formed on a single crystal substrate, and By using an IC chip configured in this way, it is possible to prevent an increase in power consumption.

[0055] Note that one pixel refers to one element whose brightness can be controlled. In this case, one pixel represents one color element, and the brightness is expressed by one color element. Therefore, in the case of a color display device consisting of R (red), G (green), and B (blue) color elements, In this case, the smallest unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. The color elements are not limited to three colors, and more than three colors may be used, and colors other than RGB may also be used. For example, adding white makes it possible to use RGBW (W is white). Or, for example, yellow, cyan, magenta, emerald green, vermilion, It is also possible to add one or more colors, such as It is also possible to add colors similar to one color to RGB, for example R, G, B1, B2 B1 and B2 are both blue, but they have slightly different frequencies. Similarly, it is possible to use R1, R2, G, and B. By using such color elements, By using such color elements, it is possible to display the image more realistically. As another example, multiple regions can be used for one color element. When using this to control brightness, it is possible to use one area as one pixel. For example, when area gradation is performed or when sub-pixels are used, For each color element, there are multiple areas that control brightness, and the overall gradation is expressed. It is also possible to use one pixel for one area for controlling the thickness. Each color element is made up of multiple pixels. Even if there are multiple color elements in one color element, they may be grouped together and one color element may be considered as one pixel. Therefore, in this case, one color element is composed of one pixel. When controlling the brightness of one color element using multiple regions, the display The size of the area that contributes to the display may be different. In the various brightness control areas, the signal supplied to each is slightly different. In other words, for one color element, multiple regions may be used to widen the viewing angle. The potentials of the pixel electrodes of the respective regions may be different. The voltage applied to the molecules varies depending on the pixel electrode, which makes it possible to widen the viewing angle. come.

[0056] When explicitly describing one pixel (three colors), the three pixels of R, G, and B are considered to be one pixel. When explicitly describing one pixel (one color), it refers to one color element. Therefore, when there are multiple regions, they are considered as one pixel.

[0057] In some cases, pixels are arranged (arranged) in a matrix. The term "arranged in a trix" means that the pixels are arranged in a straight line in the vertical or horizontal direction. This includes cases where the elements are arranged side by side, or in a jagged line. For example, when displaying full color using three color elements (e.g., RGB), a stripe arrangement is used. This also includes cases where the dots of the three color elements are arranged in a delta arrangement. The color elements are not limited to three colors, and may be more than three. For example, RGBW (W is white), or RGB plus yellow, cyan, magenta, etc. In addition, the size of the display area for each dot of the color element is This can reduce power consumption or extend the life of the display element. can.

[0058] In addition, the active matrix type has active elements in the pixels, or the active elements in the pixels A passive matrix system without the use of a polarizer can be used.

[0059] In the active matrix system, the active element (active element, nonlinear element) is a transistor. By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) and TFD It is also possible to use a thin film diode (Thin Film Diode). Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Furthermore, the small size of the element allows for an improved aperture ratio, resulting in lower power consumption and higher brightness. It is possible to improve the quality.

[0060] In addition to the active matrix type, there are also active elements (active elements, non-linear It is also possible to use a passive matrix type that does not use active elements. Since it does not use any active elements or nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and It is possible to improve the accuracy. No active elements (active elements, non-linear elements) are used. Therefore, the aperture ratio can be improved, and it is possible to achieve low power consumption and high brightness.

[0061] A transistor is defined as a transistor having at least three terminals including a gate, a drain, and a source. The element has a channel region between a drain region and a source region. A current can flow through the drain region, the channel region, and the source region. The source and drain depend on the transistor structure and operating conditions, so it is difficult to know which is the source and which is the drain. Therefore, it is difficult to determine whether the device is a source or a drain. In the claims or drawings, the regions functioning as the source and drain are In some cases, they are not called sources or drains. In such cases, for example, they are called first They may also be referred to as the first electrode and the second electrode. Alternatively, they may be referred to as a source region and a drain region.

[0062] The transistor has at least three terminals including a base, an emitter, and a collector. In this case, the emitter and the collector may be connected to the first terminal and the second terminal. It may be written as two terminals.

[0063] The gate is a gate electrode and a gate wiring (gate line, gate signal line, scanning line, scanning The term "gate electrode" refers to the entire structure including the gate electrode and the signal line. The term "gate insulating film" refers to a semiconductor that forms a channel region and overlaps it via a gate insulating film. The part of the gate electrode is called LDD (Lightly Doped). ped Drain) region or source region (or drain region) and a gate insulating film The gate wiring is the gate voltage of each transistor. Wiring for connecting between electrodes, wiring for connecting between gate electrodes of each pixel, refers to a wiring for connecting a gate electrode to another wiring.

[0064] However, there are areas (regions, Such parts (regions, conductive films, wiring, etc.) are called gates. It can be called an electrode or a gate wiring. However, there are also areas where it is not possible to clearly distinguish them. For example, the gates are arranged in an extended manner. If a part of the wiring overlaps with the channel region, the part (region, conductive film, wiring) The gate electrode also functions as a gate wiring. Therefore, such a portion (region, conductive film, wiring, etc.) may be called a gate electrode. It may also be called a gate wiring.

[0065] It is made of the same material as the gate electrode and forms the same island as the gate electrode. The connected part (region, conductive film, wiring, etc.) may also be called a gate electrode. The gate wiring is made of the same material as the gate wiring and forms the same island as the gate wiring. The connected portion (region, conductive film, wiring, etc.) may also be called the gate wiring. In the strict sense, the areas (regions, conductive films, wiring, etc.) overlap with the channel region. In some cases, the gate electrode does not have a function to connect to another gate electrode. However, due to manufacturing specifications, the gate electrode or gate wiring is made of the same material. The area that forms the same island as the gate electrode or gate wiring and is connected to it (area Therefore, such parts (regions, conductive films, wiring, etc.) are also It may also be called a gate electrode or gate wiring.

[0066] For example, in a multi-gate transistor, one gate electrode and another gate In many cases, the gate electrode is connected to the back electrode through a conductive film made of the same material as the gate electrode. Such parts (regions, conductive films, wiring, etc.) are used to connect gate electrodes. Since it is a part (region, conductive film, wiring, etc.), it can be called gate wiring, but Since the transistors can be considered as one transistor, they are called gate electrodes. That is, it may be formed of the same material as the gate electrode or gate wiring, and The part that forms the same island as the gate wiring and is connected (area, conductive film, wiring) The gate electrode and the gate wiring may be called gate electrodes or gate wirings. The conductive film of the part that connects the gate wiring and the gate electrode or the gate wiring is different from the gate electrode or the gate wiring. The conductive film formed of the material may also be called a gate electrode or a gate wiring. .

[0067] The gate terminal is a part of the gate electrode (region, conductive film, wiring, etc.) or Regarding the part electrically connected to the electrode (area, conductive film, wiring, etc.), Say something.

[0068] Note that certain wiring may be called gate wiring, gate line, gate signal line, scanning line, scanning signal line, etc. In some cases, the gate of the transistor is not connected to the wiring. The wiring, gate lines, gate signal lines, scanning lines, and scanning signal lines are on the same layer as the transistor gates. wiring made of the same material as the gate of a transistor, or wiring made of the same material as the gate of a transistor It may refer to wiring formed at the same time as the gate of the capacitor. These include wiring, power supply lines, and reference potential supply wiring.

[0069] The source includes the source region, the source electrode, and the source wiring (source line, source signal line, The whole or part of the data line, data signal line, etc. The source region is formed by doping P-type impurities (such as boron or gallium) or N-type impurities (such as phosphorus or arsenic). Therefore, it refers to a semiconductor region that contains a large amount of P-type impurities and N-type impurities. The region containing the object, known as the LDD (Lightly Doped Drain) region The source electrode is formed of a material different from that of the source region. The conductive layer is the part of the layer that is electrically connected to the source region. The source electrode is sometimes called the source electrode, including the source region. Wiring for connecting the source electrodes of the transistors, connecting the source electrodes of each pixel This refers to a wiring for connecting a source electrode to another wiring, or a wiring for connecting a source electrode to another wiring.

[0070] However, there is a part ( There are also regions, conductive films, wiring, etc. Such parts (regions, conductive films, wiring, etc.) It can be called a source electrode or a source wiring. There are also areas where it is difficult to clearly distinguish between wiring and other components. When a part of the source wiring overlaps with the source region, that part (region, conductive The film, wiring, etc.) functions as a source wiring, but also functions as a source electrode. Therefore, such a part (region, conductive film, wiring, etc.) is called a source electrode. It may also be called the source wiring.

[0071] It is made of the same material as the source electrode and forms the same island as the source electrode. The parts that are connected (regions, conductive films, wiring, etc.) and the source electrodes are connected The part (region, conductive film, wiring, etc.) that connects the source electrode may also be called the source electrode. The part that overlaps with the source wiring may also be called the source electrode. An area made of the same material and connected to the source wiring by forming the same island Such a part (region, conductive film, wiring, etc.) may be called a source wiring. In other words, there are cases where the device does not have the function of connecting to another source electrode. Due to the specifications of the device, the source electrode or source wiring is made of the same material. There are areas (regions, conductive films, wiring, etc.) that are connected to the source wiring. Such a portion (region, conductive film, wiring, etc.) may also be called a source electrode or source wiring.

[0072] For example, the conductive film in the portion connecting the source electrode and the source wiring is A conductive film formed of a material different from the source electrode or source wiring can also be called a source electrode. That's fine, you can call it source wiring.

[0073] The source terminal may be a source region, a source electrode, or a terminal electrically connected to the source electrode. It refers to a part of a circuit (such as an area, conductive film, or wiring).

[0074] When referred to as a source wiring, source line, source signal line, data line, data signal line, etc. In some cases, the source (drain) of the transistor is not connected to the wiring. The source wiring, source line, source signal line, data line, and data signal line are Wiring formed in the same layer as the source (drain) of the transistor, Wiring formed from a material or wiring formed at the same time as the source (drain) of a transistor Examples include wiring for storage capacitors, power supply lines, and wiring for supplying reference potential. There is.

[0075] The drain is the same as the source.

[0076] Semiconductor devices include semiconductor elements (transistors, diodes, thyristors, etc.). Furthermore, it refers to devices that can function by utilizing the characteristics of semiconductors. The term "semiconductor device" can be used to refer to any device that has semiconductor material. He says.

[0077] The display element includes optical modulation elements, liquid crystal elements, light-emitting elements, EL elements (organic EL elements, Inorganic EL elements or EL elements containing organic and inorganic materials), electron emission elements, electrophoretic elements, Optical elements, optical reflecting elements, optical diffraction elements, digital micromirror devices (DMDs), etc. However, this is not limited to this.

[0078] Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including a plurality of pixels. The peripheral driving circuit for driving a plurality of pixels may include a plurality of The display device may be formed on the same substrate as the pixel. Peripheral drive circuits arranged on the substrate by, for example, chip-on-glass (COG) It may include an IC chip connected by a wire or an IC chip connected by a tab or the like. The display device may include IC chips, resistors, capacitors, inductors, transistors, etc. The circuit may include a flexible printed circuit (FPC) to which The display device is connected via a flexible printed circuit (FPC) or other device, and the IC chip A printed circuit board on which chips, resistors, capacitors, inductors, transistors, etc. are mounted. The display device may include a polarizing plate or a retardation plate. The display device may include an illumination device, a housing, an audio input / output device, an optical sheet, and the like. The lighting device such as the backlight unit may include an optical sensor. Light guide plate, prism sheet, diffusion sheet, reflective sheet, light source (LED, cold cathode tube, etc.), It may also include a cooling device (water-cooled or air-cooled).

[0079] The lighting device includes a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflector, For devices that have a reflecting sheet, light source (LED, cold cathode tube, hot cathode tube, etc.), cooling device, etc. This means that.

[0080] The light-emitting device refers to a device having a light-emitting element or the like. When a light emitting device has a light element, the light emitting device is a specific example of a display device.

[0081] The reflecting device is a device having a light reflecting element, a light diffracting element, a light reflecting electrode, etc. This is what is meant.

[0082] Note that the liquid crystal display device refers to a display device having a liquid crystal element. There are direct-view, projection, transmissive, reflective, and semi-transmissive types.

[0083] The driving device refers to a device that has semiconductor elements, electric circuits, and electronic circuits. For example, a transistor (selection transistor) that controls the input of a signal from a source signal line to a pixel (sometimes called a transistor or switching transistor) and supplies voltage or current to the pixel electrode. The transistors that supply a voltage or current to the light-emitting element are Furthermore, a circuit for supplying a signal to the gate signal line (a gate driver, a gate a circuit that supplies signals to the source signal lines (sometimes called a source line driver circuit, etc.), A driver (sometimes called a source line driver circuit) is an example of a driver.

[0084] In addition, the present invention is applicable to display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflecting devices, driving devices, etc. For example, a display device may include a semiconductor device and a light emitting device. Alternatively, the semiconductor device may have a display device and a driving device. This may be the case.

[0085] Note that it is not explicitly stated that B is formed on A, or that B is formed on A. In the case of the above, it is not limited to B being formed on A in direct contact with it. This also includes cases where A and B are not in agreement, i.e., where another object is present between A and B. Here, A and B are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.). , etc.).

[0086] Therefore, for example, it is not possible to explicitly state that layer B is formed on top of layer A (or on top of layer A). When described, it means that layer B is formed directly on layer A, and layer A is formed on layer B. Another layer (such as layer C or layer D) is formed directly on top of it, and layer B is formed directly on top of it. It should be noted that other layers (such as layers C and D) may be formed as follows: It may be a single layer or multiple layers.

[0087] Furthermore, the same applies to cases where it is explicitly stated that B is formed above A. It is not limited to B being directly on A, and there is another object between A and B. For example, if layer B is formed above layer A, In this case, there are two cases: when layer B is formed directly on top of layer A, and when layer B is formed directly on top of layer A. Another layer (such as layer C or layer D) is formed on top of it, and layer B is formed directly on top of it. It should be noted that other layers (such as layers C and D) may be used as single layers. It may be a multi-layer structure.

[0088] In addition, when explicitly stating that B is formed directly on A, it is written as This includes cases where B is formed in direct contact with A, and also includes cases where another object is interposed between A and B. This does not apply.

[0089] The same applies to the case where B is below A, or B is below A.

[0090] In addition, it is preferable that anything explicitly stated as singular be in the singular. However, it is not limited to this, and plurals are also possible. It is preferable that the items described in the table be plural. However, this is not limited to this. It is also possible for the term to be singular. [Effects of the Invention]

[0091] It is possible to manufacture a semiconductor device at reduced cost. Alternatively, a semiconductor device provided with a circuit capable of high-speed operation can be manufactured. Alternatively, a semiconductor device with low power consumption can be manufactured. This makes it possible to manufacture a semiconductor device with fewer manufacturing steps. [Brief explanation of the drawings]

[0092] [Figure 1] 1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 2] 1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 3] 1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 4] 1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 5] 1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 6]1A to 1C are diagrams illustrating a manufacturing process of a semiconductor device according to the present invention; [Figure 7] 1A and 1B are cross-sectional views illustrating a semiconductor device according to the present invention; [Figure 8] 1A and 1B are cross-sectional views illustrating a semiconductor device according to the present invention; [Figure 9] 1A and 1B are cross-sectional views illustrating a semiconductor device according to the present invention; [Figure 10] 1A and 1B are cross-sectional views illustrating a semiconductor device according to the present invention; [Figure 11] 1A and 1B are top views illustrating a semiconductor device of the present invention. [Figure 12] 1 is a cross-sectional view illustrating an SOI substrate according to the present invention. [Figure 13] 1 is a cross-sectional view illustrating an SOI substrate according to the present invention. [Figure 14] 1 is a cross-sectional view illustrating an SOI substrate according to the present invention. [Figure 15] 1 is a cross-sectional view illustrating an SOI substrate according to the present invention. [Figure 16] 1 is a cross-sectional view illustrating an SOI substrate according to the present invention. [Figure 17] 1 is a cross-sectional view illustrating a liquid crystal display device according to the present invention. [Figure 18] 1 is a cross-sectional view illustrating a liquid crystal display device according to the present invention. [Figure 19] 1 is a cross-sectional view illustrating a liquid crystal display device according to the present invention. [Figure 20] 1 is a diagram illustrating a configuration of a liquid crystal display device according to the present invention. [Figure 21] 1 is a cross-sectional view illustrating a liquid crystal display device according to the present invention. [Figure 22] FIG. 2 is a circuit diagram illustrating a pixel according to the present invention. [Figure 23] FIG. 2 is a circuit diagram illustrating a pixel according to the present invention. [Figure 24] FIG. 2 is a circuit diagram illustrating a pixel according to the present invention. [Figure 25] 1A and 1B are a top view and a cross-sectional view illustrating a pixel according to the present invention. [Figure 26] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 27] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 28] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 29] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 30] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 31] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 32] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 33] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 34] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 35] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 36] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 37] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 38] 1A to 1C are diagrams illustrating electronic devices according to the present invention. [Figure 39] 1A to 1C are diagrams illustrating electronic devices according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0093] Hereinafter, embodiments of the present invention will be described with reference to the drawings. and the present invention may be practiced in various different ways without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications can be made to the modes and details of the present invention. However, the present invention should not be construed as being limited to the description of the present embodiment. In the structure of the invention, the same reference numerals are used in different drawings to indicate the same parts. Detailed descriptions of identical parts or parts having similar functions will be omitted.

[0094] (First embodiment) In a semiconductor device or a display device, all or a part of them are grown from a single crystal substrate. The silicon layer is separated (peeled off), attached (transferred) to a glass substrate, and shaped on the glass substrate. The TFT or single crystal substrate is attached to a glass substrate, and the single crystal substrate is separated (or By this method, a silicon layer is formed on the glass substrate, and the T formed on the glass substrate The silicon layer is separated from the single crystal substrate and then covered with glass. The TFT formed on the glass substrate or the single crystal substrate is attached to the glass substrate. The single crystal substrate is then peeled off, exposing a portion of the silicon layer of the single crystal substrate to the glass substrate. The TFT formed on the glass substrate by transferring the TFT to a substrate is hereinafter referred to as a single crystal TFT.

[0095] Then, non-single crystal TFTs are also formed at the same time as single crystal TFTs. , amorphous semiconductors, microcrystalline semiconductors (microcrystalline semiconductors, semi-amorphous semiconductors, nanocrystalline semiconductors, etc.

[0096] Next, the manufacturing method will be described with reference to the drawings.

[0097] As shown in FIG. 1(A), the insulating substrate 101 is not limited to glass, but may be made of various materials. For example, barium borosilicate glass, aluminoborosilicate glass, etc. A glass substrate such as glass, a quartz substrate, a ceramic substrate, or a metal substrate including stainless steel is used. Other materials include polyethylene terephthalate (PET) and polyethylene naphtha. Plastics such as polyethersulfone (PEN) and polyethersulfone (PES) It is also possible to use a substrate made of flexible synthetic resin such as acrylic. By using a substrate that can be bent, it is possible to manufacture a semiconductor device that can be bent. As long as the substrate is flexible, there are no significant limitations on the area and shape of the substrate. Therefore, the insulating substrate 101 is, for example, a rectangular substrate with one side being 1 meter or more. If the circular silicon substrate is used, productivity can be improved dramatically. This is a major advantage compared to using a plate.

[0098] It is desirable that an insulating film be disposed on the surface of the insulating substrate 101. This insulating film functions as a base film. Designed to prevent potassium metal or alkaline earth metal from adversely affecting the characteristics of semiconductor elements. The insulating film is made of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride ( Oxygen or nitrogen such as SiOxNy (x>y), silicon nitride oxide (SiNxOy) (x>y) The insulating film may have a single layer structure or a laminated structure. When the insulating film has a two-layer structure, a silicon nitride oxide film is used as the first insulating film, and a silicon nitride film is used as the second insulating film. As another example, when the insulating film has a three-layer structure, In this case, a silicon oxynitride film is provided as the first insulating film, and a silicon nitride oxide film is provided as the second insulating film. and a silicon oxynitride film may be provided as a third insulating film.

[0099] However, the present invention is not limited to this, and it is also possible not to provide an insulating film on the surface of the insulating substrate 101. be.

[0100] Then, a semiconductor layer 102 is disposed on an insulating substrate 101 on which an insulating film or the like is disposed. The semiconductor layer 102 may be disposed over the entire surface of the insulating substrate 101, or may be disposed over the entire surface of the insulating substrate 101. The semiconductor layer 102 may be disposed in a part of the semiconductor layer 102. The semiconductor layer 102 is preferably single crystal. However, the present invention is not limited to this. Single crystals are desirable because they have good current characteristics and high mobility. It's nice.

[0101] The method of arranging the semiconductor layer 102 will be described in another embodiment.

[0102] Next, as shown in FIG. 1(B), the unnecessary portions are removed so that the semiconductor layer 102 has a predetermined shape. In other words, the semiconductor layer 102 is processed into an island shape. That is, the semiconductor layer 102 is patterned.

[0103] This semiconductor layer 102 functions as an active layer of a transistor. In some cases, they may function as electrodes for capacitance elements, resistance elements, or active layers for diodes. .

[0104] Next, as shown in FIG. 1(C), an insulating layer 103 is disposed so as to cover the semiconductor layer 102. The insulating layer 103 can be formed by a method such as CVD, sputtering, thermal oxidation, vapor deposition, inkjet printing, or the like. The insulating layer 103 is disposed by a printing method or the like. The insulating layer 103 also functions as a gate insulating film. In some cases, it functions as an insulator for the capacitance element, and in other cases, it functions as an interlayer film.

[0105] The insulating layer 103 is made of a material such as siloxane resin, silicon oxide (SiOx), silicon nitride (SiNx), or oxide. Silicon nitride (SiOxNy)(x>y), silicon oxide nitride (SiNxOy)(x>y), D Carbon-containing films such as LC (diamond-like carbon) or epoxy and polyimide Organic materials such as polyethylene, polyamide, polyvinylphenol, benzocyclobutene, and acrylic a single layer of an insulating film containing oxygen or nitrogen, or a laminated structure of these. It should be noted that siloxane resin corresponds to a resin containing Si-O-Si bonds. The skeleton of oxyan is composed of bonds between silicon (Si) and oxygen (O). As the organic group, an organic group containing at least hydrogen (e.g., an alkyl group, an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, at least one of the following can be used as a substituent: An organic group containing hydrogen and a fluoro group may also be used.

[0106] However, the insulating layer 103 in contact with the semiconductor layer 102 is made of silicon oxide (SiOx). It is desirable that the silicon oxide (SiOx) is used to trap electrons. This can prevent the occurrence of hysteresis effects.

[0107] Next, as shown in FIG. 1(D), a conductive layer 104 is disposed so as to cover the insulating layer 103. The conductive layer 104 can be formed by a method such as CVD, sputtering, thermal oxidation, vapor deposition, inkjet printing, or the like. They are arranged using methods such as

[0108] Next, as shown in FIG. 2(A), the unnecessary portions are removed so that the conductive layer 104 has a predetermined shape. In other words, the conductive layer 104 is processed into an island shape. As a result, the conductive layer 104 is patterned. 4B is formed.

[0109] The gate electrode 104A, together with the semiconductor layer 102 and the insulating layer 103, constitutes a transistor. The transistor 203 has a gate electrode 104A and a gate electrode 104B. Since it is located at the top, it is a top-gate transistor.

[0110] The transistor 203 can have various configurations. For example, 203 can be a single drain transistor. In this case, a simple method is Therefore, there is an advantage that the manufacturing cost is low and the yield can be high. The conductor layer 102 has regions with different impurity concentrations, and includes a channel region, a source region, and a drain region. In this way, by controlling the amount of impurities, the resistivity of the semiconductor layer can be In the source and drain regions, the semiconductor layer 102 and the conductive layer connected thereto are The electrical connection state with the conductive film can be made closer to ohmic contact. As a method for forming semiconductor layers with different amounts, the gate electrode 104A is used as a mask to form semiconductor layers. A method of doping the body layer with impurities can be used.

[0111] Alternatively, in the transistor 203, the gate electrode 104A has a taper angle of at least a certain value. In this case, since the manufacturing method can be simple, the manufacturing cost is low, The semiconductor layer 102 has an advantage of being able to be manufactured with a high yield. The region includes a channel region, a lightly doped drain (LDC) n:LDD) region, source region, and drain region. By controlling the resistivity of the semiconductor layer, the resistivity of the semiconductor layer can be controlled. The LDD region can be electrically connected to the conductive film by approximating ohmic contact. Therefore, high electric fields are less likely to be applied inside the transistor, and hot carriers are less likely to damage the element. Deterioration can be suppressed. In this case, a method of doping impurities into the semiconductor layer using the gate electrode 104A as a mask is used. When the gate electrode 104A has a taper angle of a certain degree or more, To provide a gradient in the concentration of impurities doped into the semiconductor layer through the electrode 104A. This allows the LDD region to be formed easily.

[0112] Alternatively, in the transistor 203, the gate electrode 104A is composed of at least two layers, The lower gate electrode may have a longer shape than the upper gate electrode. In this case, the shapes of the upper gate electrode and the lower gate electrode are sometimes called hat-shaped. Since the gate electrode 104A has a hat-shaped configuration, it is possible to form the gate electrode 104A without adding a photomask. The LDD region can be formed without overlapping with the gate electrode 104A. The structure in which this is done is called the GOLD structure (Gate Overlapped LDD). The following method can be used to form the gate electrode 104A in a hat shape. That's fine.

[0113] First, when patterning the gate electrode 104A, the lower layer The gate electrode and the upper layer gate electrode are etched to form a tapered shape on the side. Next, anisotropic etching is performed to make the slope of the upper gate electrode closer to vertical. This process forms a gate electrode with a hat-shaped cross section. By doping with a metal element, the channel region, the LDD region, the source region and the drain region can be formed. An in-region is formed.

[0114] The LDD region overlapping the gate electrode 104A is the Lov region, and the gate electrode 104 The LDD region that does not overlap with A is called the Loff region. Although the effect of suppressing the off-state current is high, it also reduces the electric field near the drain and prevents hot carriers from On the other hand, the Lov region reduces the electric field near the drain. Although it is effective in preventing the deterioration of the on-current value, it is not very effective in suppressing the off-current value. It is preferable to fabricate transistors with structures according to the required characteristics for each of the various circuits. For example, when the semiconductor device is used as a display device, the pixel transistor has an off-state current value In order to suppress this, it is preferable to use a transistor having an Loff region. The transistors in the peripheral circuits reduce the electric field near the drain and prevent the deterioration of the on-current value. To prevent this, it is preferable to use a transistor having an Lov region.

[0115] Alternatively, in the transistor 203, a sidewall is formed in contact with the side surface of the gate electrode 104A. By having a sidewall, it is possible to The area overlapping with the hole can be the LDD area.

[0116] Alternatively, in the transistor 203, the semiconductor layer 102 is doped using a mask. By doing so, it is possible to form an LDD (Loff) region. As a result, the LDD region can be formed reliably, and the off-current value of the transistor can be reduced. This can be done.

[0117] Alternatively, in the transistor 203, the semiconductor layer is doped using a mask. By doing so, it is possible to form an LDD (Lov) region. It is possible to form an LDD region, which reduces the electric field near the drain of the transistor and This can reduce the deterioration of the on-current value.

[0118] The conductive layer 104 is not limited to a gate electrode, and may be a conductive film having various functions. For example, wiring for forming a storage capacitor, wiring for forming a scanning line, and a circuit It can have various functions such as wiring and electrodes for connecting.

[0119] Next, as shown in FIG. 2(B), a film is formed on the gate electrode 104A so as to cover the gate electrode 104B. The insulating layer 201 is formed on the insulating layer 201 by a method such as CVD, sputtering, thermal oxidation, or vapor deposition. The insulating layer 201 is a gate insulating film. It also functions as an insulator for the capacitance element and as an interlayer film. be.

[0120] The insulating layer 201 is made of a material such as siloxane resin, silicon oxide (SiOx), silicon nitride (SiNx), or oxide. Silicon nitride (SiOxNy)(x>y), silicon oxide nitride (SiNxOy)(x>y), D Carbon-containing films such as LC (diamond-like carbon) or epoxy and polyimide Organic materials such as polyethylene, polyamide, polyvinylphenol, benzocyclobutene, and acrylic a single layer of an insulating film containing oxygen or nitrogen, or a laminated structure of these. It should be noted that siloxane resin corresponds to a resin containing Si-O-Si bonds. The skeleton of oxyan is composed of bonds between silicon (Si) and oxygen (O). As the organic group, an organic group containing at least hydrogen (e.g., an alkyl group, an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, at least one of the following can be used as a substituent: An organic group containing hydrogen and a fluoro group may also be used.

[0121] However, the insulating layer 201 in the portion in contact with the semiconductor layer 202 to be disposed next is made of silicon nitride. The semiconductor layer 202 may contain hydrogen therein. In this case, by using silicon nitride (SiNx) as the insulating layer 201, the semiconductor layer 20 This can prevent the hydrogen contained in the insulating layer 201 from reacting with the insulating layer 201.

[0122] Next, as shown in FIG. 2(C), a semiconductor layer 202 is disposed so as to cover the insulating layer 201. The semiconductor layer 202 can be formed by a method such as CVD, sputtering, thermal oxidation, vapor deposition, inkjet printing, or the like. The semiconductor layer 202 is formed by using a printing method or the like. An impurity semiconductor is disposed on the semiconductor.

[0123] The crystallinity of the semiconductor layer 202 may be amorphous, microcrystalline, It is desirable that the material be semi-amorphous, also called nanocrystal, etc.

[0124] Next, as shown in FIG. 2(D), the unnecessary portions are removed so that the semiconductor layer 202 has a predetermined shape. In other words, the semiconductor layer 202 is processed into an island shape. That is, the semiconductor layer 202 is patterned.

[0125] In this case, as a patterned semiconductor layer, the semiconductor layer 202A is a It functions as an active layer, but is not limited to this. The semiconductor layer functions as an interlayer film. In other words, by arranging the semiconductor layer, it is possible to reduce the cross capacitance of the wiring. Furthermore, by reducing the step, it is also possible to reduce the possibility of wiring breakage. The dielectric layer 202B and the semiconductor layer 202C function as an interlayer film.

[0126] Next, as shown in FIG. 3(A), the semiconductor layer 202A, the semiconductor layer 202B, and the semiconductor layer 20 The conductive layer 301 is disposed so as to cover the 2C. The conductive layer 301 is formed by a method such as CVD, sputtering, or the like. The deposition is performed using a thermal oxidation method, a vapor deposition method, an inkjet method, a printing method, or the like.

[0127] The conductive layer 104 and the conductive layer 301 may be a single-layer conductive film or a stack of two or three conductive films. The conductive layer 104 can be formed using a conductive film. For example, tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W ), chromium (Cr), silicon (Si), aluminum (Al), nickel (Ni), carbon Element (C), tungsten (W), platinum (Pt), copper (Cu), tantalum (Ta), gold (A A film of a single element such as manganese (Mn), or a nitride film of the above element (typically tantalum nitride film, tungsten nitride film, titanium nitride film), or a combination of the above elements The alloy film (typically Mo-W alloy, Mo-Ta alloy) or the silica of the above elements Use of a silicon dioxide film (typically a tungsten silicide film or a titanium silicide film) Alternatively, the alloy containing a plurality of the elements may be an Al alloy containing C and Ti, or an N alloy containing C and Ti. Al alloy containing i, Al alloy containing C and Ni, Al alloy containing C and Mn The above-mentioned simple film, nitride film, alloy film, silicide film, etc. can be used. For example, when the laminated structure is used, Al This allows the structure to be sandwiched between Mo or Ti. It can improve resistance to chemical reactions. In the case of silicon, it can be Therefore, it is desirable that the semiconductor layer contains a large amount of impurities (P-type impurities or N-type impurities).

[0128] Next, as shown in FIG. 3(B), the unnecessary portions are removed so that the conductive layer 301 has a predetermined shape. In other words, the conductive layer 301 is processed into an island shape. As a result, the conductive layer 301A, the conductive layer 301B, and the conductive layer 301C are patterned. The conductive layer 301C and the conductive layer 301D are formed. 301C, the conductive layer 301D functions as a source electrode, a drain electrode, a source signal line, etc. do.

[0129] Next, as shown in FIG. 3(C), a part of the semiconductor layer 202A is etched. This removes the impurity layer in the channel region, completing the transistor 303. The transistor 303 has a gate electrode 104B disposed below the semiconductor layer 202A. Therefore, it is a bottom gate transistor and also an inverted staggered transistor. In addition, since the semiconductor layer in the channel portion is etched, it is a channel-etch type.

[0130] The semiconductor layer 202A is made of an amorphous semiconductor, a microcrystalline semiconductor, or a It can be made of a semiconductor or semi-amorphous semiconductor (SAS). A crystalline semiconductor layer may also be used. SAS has an amorphous structure and a crystalline structure (including single crystal and polycrystal). A semiconductor having an intermediate structure and a third state that is stable in terms of free energy, It contains crystalline regions with distance order and lattice distortion. At least some regions in the film In the region, crystalline regions of 0.5 to 20 nm can be observed, and when silicon is the main component, The Raman spectrum of the silicon dioxide is shifted to the lower wavenumber side from 520 cm-1. Diffraction peaks of (111) and (220) are observed, which are believed to be derived from the elementary crystal lattice. At least one atom of hydrogen or halogen to compensate for the dangling bond % or more. SAS is a material gas that is decomposed by glow discharge (plasma CVD). The material gases are SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, SiF4, etc. can be used. Alternatively, GeF 4 may be mixed. This material gas may be H2 or H2 and He, Ar, Kr, Ne The dilution ratio is 2 to 1000 times. Range: Pressure is approximately 0.1 Pa to 133 Pa, power frequency is 1 MHz to 120 MHz The frequency is preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300°C or less. As for elements, impurities of atmospheric components such as oxygen, nitrogen, and carbon are 1×10 20 cm -1 Below and In particular, the oxygen concentration is preferably 5×10 19 / cm 3 Less than 1 × 10 19 / cm 3 Here, sputtering, LPCVD, plasma CVD, etc. Silicon (Si)-based materials (e.g., Si x Ge 1-x etc.) and amorphous semiconductor A semiconductor layer is formed, and the amorphous semiconductor layer is crystallized by laser crystallization, RTA, or furnace annealing. and thermal crystallization using metal elements that promote crystallization. and crystallize.

[0131] Next, as shown in FIG. 4(A), conductive layer 301A, conductive layer 301B, conductive layer 301C, The insulating layer 401 is disposed so as to cover the conductive layer 301D. The insulating layer 401 is formed by a CVD method, a sintering method, or the like. It is placed using methods such as sputtering, thermal oxidation, vapor deposition, inkjet printing, and the like. The layer 401 also functions as a protective film. Alternatively, it functions as an insulator for the capacitor element, and serves as an interlayer film. In some cases, it can function as a

[0132] The insulating layer 401 is made of a material such as siloxane resin, silicon oxide (SiO x ), silicon nitride (SiN x ),acid Silicon nitride (SiO x N y ) (x>y), silicon oxynitride (SiN x O y )(x>y), D Carbon-containing films such as LC (diamond-like carbon) or epoxy and polyimide Organic materials such as polyethylene, polyamide, polyvinylphenol, benzocyclobutene, and acrylic a single layer of an insulating film containing oxygen or nitrogen, or a laminated structure of these. It should be noted that siloxane resin corresponds to a resin containing Si-O-Si bonds. The skeleton of oxyan is composed of bonds between silicon (Si) and oxygen (O). As the organic group, an organic group containing at least hydrogen (e.g., an alkyl group, an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, at least one of the following can be used as a substituent: An organic group containing hydrogen and a fluoro group may also be used.

[0133] However, the insulating layer 401 in the portion in contact with the semiconductor layer 202 is made of silicon nitride (S iN x The semiconductor layer 202 may contain hydrogen therein. In this case, the insulating layer 401 is made of silicon nitride (SiN x ) is used, the semiconductor layer 202 This can prevent the contained hydrogen from reacting with the insulating layer 401.

[0134] The insulating layer 401 is made of silicon nitride (SiN x It is desirable to include silicon nitride (Si N x ) has the function of blocking impurities. This can be protected.

[0135] It is preferable that the insulating layer 401 includes an organic film. If the surface of the insulating layer 401 is flat, the insulating layer 401 can be formed on the surface. The pixel electrodes can also be made flat. A flat pixel electrode makes it easier to properly fabricate the display element. It is possible to do this.

[0136] Next, as shown in FIG. 4(B), a contact hole is formed. By etching the material using dry etching or wet etching methods, The insulating layer 401 has an organic film, and the organic film is made of a photosensitive material. In this case, contact holes can be formed at the same time as the film is formed. There is no need to etch the material in the hole, so the number of processes can be reduced. Contact hole 501A, contact hole 501B, contact hole 501E The contact hole 501C is formed by etching the insulating layer 401. The contact hole 501D is formed by etching the insulating layer 401, the insulating layer 201, and the insulating layer 103. It is formed in this way.

[0137] Next, as shown in FIG. 5, the insulating layer 401, the contact hole 501A, the contact hole contact hole 501B, contact hole 501C, contact hole 501D, contact hole The conductive layer 601 is disposed so as to cover the layer 501E. The conductive layer 601 is formed by a method such as CVD or sputtering. The conductive layer 60 is formed by a method such as a thermal oxidation method, a vapor deposition method, an ink jet method, or a printing method. The element 1 functions as a wiring, a pixel electrode, a transparent electrode, a reflective electrode, and the like.

[0138] The conductive layer 601 may have a single-layer conductive film or a stacked structure of two or three conductive films. Furthermore, the conductive layer 601 has a high light transmittance and has a transparent or nearly transparent region. This allows it to function as a pixel electrode in the transmissive area. In addition, it is desirable that the conductive layer 601 has a region with high light reflectance. This allows the electrode to function as a pixel electrode in the reflective area.

[0139] It is preferable that the conductive layer 601 is a film containing ITO, IZO, ZnO, or the like.

[0140] Next, as shown in FIG. 6, the unnecessary portion of the conductive layer 601 is removed so that the conductive layer 601 has a predetermined shape. That is, the conductive layer 601 is processed into an island shape. The conductive layer 601 is patterned.

[0141] In this case, as a patterned conductive layer, the conductive layer 601A functions as a pixel electrode. However, the present invention is not limited to this. Next, the conductive layer 601B and the conductive layer 601C are The conductive layer 601B connects the conductive layer 301C and the semiconductor layer 102. The conductive layer 601C connects the conductive layer 301D and the semiconductor layer 102. It has the function of

[0142] After this, various processes are carried out to match the various display elements, and the display device is completed. For example, an alignment film is formed, and liquid crystal is disposed between the alignment film and an opposing substrate having a color filter. An organic EL material is disposed on top of the conductive layer 601A, and a cathode is disposed on top of that.

[0143] In FIG. 4B, a contact hole is formed and a conductive layer is disposed on the contact hole. 7, the conductive layer 301C and the semiconductor layer 102 are connected. The layer 301F and the conductive layer 104C are connected to the contact holes 501F and 501C. The connection can be made by using the conductive layer 601D via the conductive layer 301G. F is formed using the conductive layer 301, and the conductive layer 104C is formed using the conductive layer 104. The conductive layer 601D is formed using the conductive layer 601. The contact holes 501A, 501F and 501G are the same as the contact holes 501A, 501F and 501G. The contact holes 501B, 501C, and 501D are formed at the same time. It has been done.

[0144] In addition, conductive layers 301C, 301D, 301F, etc., which have a semiconductor layer underneath Alternatively, as shown in FIG. 7, a semiconductor layer may be disposed under the conductive layer 301E. You don't have to.

[0145] 2(D), 3(A), 3(B), and 3(C), the semiconductor layer 202 and the conductive layer 203 are The layer 301 was patterned using a different mask (reticle), but this is not limited to this. The semiconductor layer 202 and the conductive layer 301 are not formed by a half-tone mask or a gray-tone mask. By using a mask, it is possible to pattern using a single mask (reticle). A cross-sectional view of this case is shown in Figure 8. Half-tone masks, gray-tone masks, etc. Therefore, the semiconductor layer 202E has a larger size than the conductive layers 301A and 301B. In other words, the semiconductor layer 202E is always present below the conductive layer 301A and the conductive layer 301B. are arranged in the same way.

[0146] In FIG. 6, the conductive layer 301C and the semiconductor layer 601B are connected via the conductive layer 601B and the conductive layer 601C. 7, the conductive layer 6 However, the present invention is not limited to this. By forming contact holes, direct connection is possible, rather than through another conductive film. That is, it is possible to perform the process as the next step of FIG. 2(B) or as the next step of FIG. 2(D). In the process, the insulating layer 201 and the insulating layer 103 are etched to form contact holes. By forming a conductive film using the conductive layer 301 and a conductive film using the conductive layer 104, The conductive film formed using the semiconductor layer 102 is directly connected to the semiconductor layer formed using the conductive film formed using the semiconductor layer 102. An example of this case is shown in FIG. 9. In FIG. 9, a conductive layer 301 is used to form a The conductive layer 301G and the semiconductor layer 102 are directly connected to each other through the contact hole 901A. Similarly, a conductive layer 301H formed using the conductive layer 301 and a semiconductor layer 1 02 is directly connected to the conductive layer 6 through the contact hole 901B. O1E is directly connected to the conductive layer 301H through a contact hole 501H. In this case, the conductive layer 301H and the conductive layer 301G are provided with a semiconductor layer therebelow. It is desirable not to place a conductive layer when making contact with the semiconductor layer 102. It is preferable that there is no other layer between the layer 301H and the conductive layer 301G and the semiconductor layer 102. Because it is desirable.

[0147] In FIG. 6, the transistor 303 is a channel-etched type, but is not limited to this. It is also possible to use a channel protection type. An example of this is shown in Figure 10. In the case of the protection type, the semiconductor layers are not arranged continuously, but the etching of the channel part is An insulating layer 1001 is placed to protect the semiconductor layer 1002. An insulating layer 1001 is placed on the insulating layer 1001, and a semiconductor layer 1003A and a semiconductor layer 1003B are placed on the insulating layer 1001. The semiconductor layer 1003A and the semiconductor layer 1003B are doped with impurities (N-type or P type).

[0148] In FIG. 10, the semiconductor layer 1002 is patterned, and then the semiconductor layer 1003 is patterned. A, the semiconductor layer 1003B, the conductive layer 301A and the conductive layer 301B are patterned simultaneously. However, the present invention is not limited to this. It is also possible to simultaneously pattern the conductive layer 301A and the conductive layer 301B. In this case, the semiconductor layer 100 must be formed under the conductive layer 301A and the conductive layer 301B. 2 is placed.

[0149] So far, the structure of a transistor and a manufacturing method of a transistor have been described. Wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tin (Ti), Ta (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium ( Nd), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc ( Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As) From the group consisting of gallium (Ga), indium (In), tin (Sn), and oxygen (O) One or more selected elements, or one or more elements selected from the above group Compounds and alloy materials containing indium tin oxide (ITO), indium zinc Lead oxide (IZO), indium tin oxide with silicon oxide (ITSO), zinc oxide (Zn O), tin oxide (SnO), cadmium tin oxide (CTO), aluminum neodymium (Al- Nd), magnesium silver (Mg-Ag), molybdenum niobium (Mo-Nb), etc. Alternatively, wiring, electrodes, conductive layers, conductive films, terminals, etc., should be made of these chemicals. It is preferable that the material is a combination of a compound or the like. Compounds of silicon with one or more selected elements (silicides) (e.g., aluminum silicon, molybdenum silicon, nickel silicide, etc.), one selected from the group Compounds of one or more elements with nitrogen (e.g., titanium nitride, tantalum nitride, molybdenum nitride) It is desirable that the material be formed with a metal layer (such as a dent).

[0150] Silicon (Si) can contain n-type impurities (such as phosphorus) or p-type impurities (such as boron). The impurities in silicon improve its electrical conductivity, and Therefore, it is possible to use it as wiring, electrodes, etc. It becomes.

[0151] Silicon can be classified into single crystal, polycrystalline (polysilicon), and microcrystalline (microcrystalline silicon). Silicon with various crystallinity can be used. Silicon that does not have crystallinity, such as amorphous silicon, can be used. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers, It is possible to reduce the resistance of conductive films, terminals, etc. Amorphous silicon or microcrystalline silicon By using the film, wiring and the like can be formed in a simple process.

[0152] Aluminum or silver has high conductivity, which can reduce signal delay. Furthermore, it is easy to etch, making it easy to pattern and enabling fine processing. do.

[0153] Copper has high conductivity, so it can reduce signal delay. In order to improve adhesion, it is desirable to use a laminated structure.

[0154] Molybdenum or titanium is used in oxide semiconductors (ITO, IZO, etc.) or silicon It has the advantages of not causing defects even when it comes into contact with silicon, being easy to etch, and having high heat resistance. Therefore, it is desirable.

[0155] Tungsten is desirable because it has advantages such as high heat resistance.

[0156] Neodymium is desirable because it has advantages such as high heat resistance. When alloyed with aluminum, the heat resistance improves and the aluminum prevents hillocks from forming. It becomes difficult.

[0157] Silicon has high heat resistance and can be formed simultaneously with the semiconductor layer of the transistor. This is desirable because it has the following advantages:

[0158] In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide ( SnO) and cadmium tin oxide (CTO) are translucent, so they are used in areas that transmit light. For example, it can be used as a pixel electrode or a common electrode.

[0159] IZO is desirable because it is easy to etch and process. It is also unlikely that residue will remain when chipping. When IZO is used as an electrode, problems occur in the liquid crystal element and the light emitting element (short circuit, alignment disorder, etc.). This can reduce the resulting

[0160] The wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. may have a single layer structure. By forming the single layer structure, wiring, electrodes, conductive layers, conductive The manufacturing process for membranes, terminals, etc. can be simplified, reducing the number of processing days and costs. Alternatively, by using a multi-layer structure, the advantages of each material can be utilized. It is possible to utilize the advantages of the material while reducing its disadvantages, and form high-performance wiring and electrodes. For example, by including a low-resistance material (such as aluminum) in the multilayer structure, As another example, a low heat-resistant material can be sandwiched between high heat-resistant materials. By using a laminated structure, it is possible to utilize the advantages of low heat resistance materials while also reducing wiring, electrodes, etc. For example, a layer containing aluminum can be formed by adding molybdenum, titanium, or It is desirable to have a laminated structure in which the material is sandwiched between layers containing tungsten, neodymium, or the like.

[0161] Here, when wiring, electrodes, etc. come into direct contact with each other, they may adversely affect each other. For example, if the material of one wiring or electrode penetrates into the other wiring or electrode, As another example, a high resistance portion may be formed or During manufacturing, problems may occur and manufacturing may not be successful. Depending on the structure, it is a good idea to sandwich or cover reactive materials with less reactive materials. For example, when connecting ITO and aluminum, a chip is placed between the ITO and aluminum. Titanium, molybdenum, and neodymium alloys are preferred. When connecting silicon to aluminum, titanium or molybdenum is used between the silicon and aluminum. It is desirable to sandwich a neodymium alloy.

[0162] The wiring refers to an arrangement of conductors. It may be provided in a long linear shape. Alternatively, the electrodes may be arranged in a short length. Therefore, the electrodes are included in the wiring.

[0163] Carbon nanotubes are used as wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. Furthermore, since carbon nanotubes are transparent, light can pass through them. For example, it can be used as a pixel electrode or a common electrode. This can be done.

[0164] So far, cross-sectional views have been shown, but next, examples of layout diagrams will be shown. The layout diagram in which two semiconductor layers 102AA and 10 are arranged is shown in FIG. A gate electrode 104AA is disposed on the first power supply line 32BB to form a transistor. The semiconductor layer 102AA is connected to the conductive layer 601AA via a contact hole. Similarly, the second power supply line 301CC and the semiconductor layer 102BB are connected to each other through a contact. The output wiring 301BB is connected to the conductive layer 601CC via a contact hole. , the conductive layer 60 through the contact holes 501AA and 501BB. The semiconductor layer 102AA and the semiconductor layer 102BB are connected using the 1BB.

[0165] The circuit shown in FIG. 11 operates as an inverter circuit or a source follower circuit. It is possible to do this.

[0166] In this way, the circuit configured using the transistor 203 has a transistor mobility of It is desirable to use it as a driver circuit because it has a high current supply capacity. The pixel circuit and the MOS transistor 303 are not so highly mobile and can be manufactured in a large area. It is desirable to use it as such.

[0167] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0168] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part may be implemented in a different manner. By combining parts of the form, even more figures can be constructed.

[0169] This embodiment is a concrete embodiment of the contents (or a part thereof) described in other embodiments. An example of a slightly modified version, an example of a partially modified version, an example of an improved version , examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments are not applicable to or incorporated in this embodiment. can be freely combined or substituted.

[0170] (Second embodiment) Next, a method for arranging the semiconductor layers used in the single crystal TFT will be described.

[0171] The SOI substrate according to the present invention is shown in Figures 12(A) and 12(B). The plate 9200 is a substrate having an insulating surface or an insulating substrate, and is made of aluminosilicate glass. , aluminoborosilicate glass, barium borosilicate glass, etc. used in the electronics industry Various glass substrates are applicable. Others include quartz glass and semiconductor substrates such as silicon wafers. The SOI layer 9202 is a single crystal semiconductor, typically single crystal silicon. In addition, hydrogen ion implantation delamination of silicon or germanium is used. A semiconductor layer that can be separated from a single crystal semiconductor substrate or a polycrystalline semiconductor substrate can be used. In addition, crystalline semiconductors formed using compound semiconductors such as gallium arsenide and indium phosphide can be used. Semiconductor layers may also be applied.

[0172] Between the base wafer 9200 and the SOI layer 9202, a hydrophilic surface having a smooth surface is provided. A bonding layer 9204 is provided to form a bonding layer 9204. A silicon oxide film is suitable for this bonding layer 9204. In particular, a silicon oxide film formed by chemical vapor deposition using organosilane gas is preferred. As the organic silane gas, ethyl silicate (TEOS: chemical formula Si(OC2H5)4 ), tetramethylsilane (TMS), tetramethylcyclotetrasiloxane (TMCTS) ), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (H MDS), triethoxysilane (SiH(OC2H5)3), trisdimethylaminosilane Silicon-containing compounds such as N(CH3)2)3 can be used.

[0173] The bonding layer 9204 having the smooth surface and forming a hydrophilic surface has a thickness of 5 nm to 500 nm. With this thickness, the roughness of the surface on which the film is to be formed can be smoothed and the film can be formed with the thickness of the film. The smoothness of the growth surface can be ensured. The base substrate 9200 also has a similar silicon oxide film. That is, a substrate having an insulating surface or an insulating base substrate 9 may be provided. When bonding the SOI layer 9202 to the silicon substrate 200, one or both of the bonding surfaces may be A bonding layer 9204 is preferably formed of a silicon oxide film formed using organic silane as a raw material. This allows for the formation of a strong bond.

[0174] FIG. 12B shows a structure in which a barrier layer 9205 and a bonding layer 9204 are provided on a base substrate 9200. When the SOI layer 9202 is bonded to the base wafer 9200, the The glass substrate used as a substrate is then melted to form a movable insulator such as an alkali metal or alkaline earth metal. This prevents the SOI layer 9202 from being contaminated by the diffusion of the on-doped impurities. The bonding layer 9204 on the base substrate 9200 side may be provided as appropriate.

[0175] FIG. 13(A) shows a structure in which a nitrogen-containing insulating layer 9220 is provided between an SOI layer 9202 and a bonding layer 9204. The nitrogen-containing insulating layer 9220 is a silicon nitride film, a silicon nitride oxide film, or is formed by laminating one or more films selected from silicon oxynitride films. A silicon oxynitride film and a silicon nitride oxide film are stacked from the layer 9202 side to form a nitrogen-containing insulating layer 9 220. The bonding layer 9204 forms a bond with the base substrate 9200. On the other hand, the nitrogen-containing insulating layer 9220 is provided in the SOI layer so that impurities such as mobile ions and moisture are not introduced into the SOI layer. It is preferable to provide a filter 9202 to prevent contamination due to diffusion.

[0176] Here, silicon oxynitride is a material having a higher oxygen content than nitrogen content in its composition. For example, oxygen is 50 atomic % or more but not more than 70 atomic %, and nitrogen is 0.5 atomic % or less. 15 atomic % or less, silicon is 25 atomic % or more and 35 atomic % or less, hydrogen is 0.1 atomic % or more and 10 The term "silicon nitride oxide" refers to a material that contains silicon dioxide in an amount of less than 1 atomic percent. It indicates that the nitrogen content is higher than the oxygen content, for example, oxygen is 5 atomic % or more but 30 atomic % or less. Nitrogen is 20 atomic % or more and 55 atomic % or less, silicon is 25 atomic % or more and 35 atomic % or less, water is The content of elements is in the range of 10 atomic % to 30 atomic %. Rutherford Backscattering Spectroscopy (RBS) Spectrometry and Hydrogen Forward Scattering (HFS) The results are based on measurements using the Ward Scattering method. The total content of does not exceed 100 atomic %.

[0177] 13B shows a structure in which a bonding layer 9204 is provided on a base substrate 9200. A barrier layer 9205 is preferably provided between 9200 and the bonding layer 9204. The glass substrate used as the base substrate 9200 is coated with an alkali metal or alkaline earth metal. In order to prevent mobile ion impurities such as metalloids from diffusing and contaminating the SOI layer 9202, In addition, a silicon oxide film 9221 is formed on the SOI layer 9202. The silicon oxide film 9221 forms a bond with the bonding layer 9204, and the SO The silicon oxide film 9221 is preferably formed by thermal oxidation. In addition, a film formed by chemical vapor deposition using TEOS was used, similar to the bonding layer 9204. Alternatively, chemical oxide may be used as the silicon oxide film 9221. Chemical oxides can be formed by treating the surface of a semiconductor substrate with ozone-containing water, for example. The chemical oxide is formed in accordance with the flatness of the surface of the semiconductor substrate. This is preferable because it is

[0178] A method for manufacturing such an SOI substrate will be described with reference to FIGS. 14(A) to 14(C) and FIG. 15. explain.

[0179] The semiconductor substrate 9201 shown in FIG. 14(A) is cleaned, and the surface is accelerated by an electric field. The ions are introduced to a predetermined depth to form an embrittlement layer 9203. The thickness of the SOI layer formed on the base substrate is taken into consideration. The thickness of the film is 10 to 500 nm, preferably 10 to 200 nm. The acceleration voltage at the time of irradiation is set in consideration of this thickness so that ions are introduced into the semiconductor substrate 9201. The embrittlement layer is formed by introducing ions of hydrogen, helium, or halogens such as fluorine. In this case, ions of different masses consisting of one or more identical atoms are formed. When irradiating with hydrogen ions, H + , H2 + , H3 + ion In addition to including H3 + It is preferable to keep the proportion of ions high. + Aeon ratio By increasing the ratio, the irradiation efficiency can be increased and the irradiation time can be shortened. With this configuration, separation can be easily performed.

[0180] When ions are irradiated under high dose conditions, the surface of the semiconductor substrate 9201 becomes rough. Therefore, the surface to be irradiated with ions should be made of a silicon nitride film or a silicon nitride oxide film. A protective film against ion irradiation is provided with a thickness of 50 nm to 200 nm using silicon film or the like. It's fine to leave it there.

[0181] Next, as shown in FIG. 14B, a bonding layer 9204 is formed on the surface that is to be bonded to the base substrate. As described above, the silicon oxide film is formed by using organic silane gas. Silicon oxide films made by chemical vapor deposition are preferred. A silicon oxide film formed by chemical vapor deposition using a chemical In the film formation by the vapor phase epitaxy method, degassing occurs from the embrittlement layer 9203 formed in the single crystal semiconductor substrate. The film formation temperature is set to, for example, 350°C or less to avoid this. The heat treatment for separating the SOI layer from the polycrystalline semiconductor substrate requires a heat treatment temperature higher than the film formation temperature. Applies.

[0182] FIG. 14C shows a bonding layer 9204 formed between a base substrate 9200 and a semiconductor substrate 9201. The surfaces to be bonded are thoroughly cleaned. Then, the base substrate 9200 and the bonding layer 9204 are brought into close contact with each other to bond the substrate. This bond is formed by the action of van der Waals forces, and the base substrate 920 By pressing the 0 and the semiconductor substrate 9201 together, a strong bond can be formed by hydrogen bonding. It is possible.

[0183] To form a good bond, the surface may be activated. The surface is irradiated with an atomic beam or an ion beam. When using it, an inert gas neutral atom beam such as argon or an inert gas ion beam is used. Alternatively, plasma irradiation or radical treatment can be used. Such surface treatment allows bonding between different materials even at temperatures of 200 to 400°C. This makes it easier to

[0184] After the base substrate 9200 and the semiconductor substrate 9201 are bonded together via the bonding layer 9204, It is preferable to perform a heat treatment or a pressure treatment. The heat treatment temperature is set to a temperature higher than the heat resistance temperature of the base substrate 9200. In the pressure treatment, pressure is applied in a direction perpendicular to the joining surface. The process is performed in this manner, taking into consideration the withstand voltage of the base substrate 9200 and the semiconductor substrate 9201 .

[0185] In FIG. 15, a base substrate 9200 and a semiconductor substrate 9201 are bonded together, and then heat treatment is performed. The semiconductor substrate 9201 is separated at the embrittlement layer 9203. It is preferable to perform the deposition at a temperature equal to or higher than the deposition temperature of the base substrate 9200 and equal to or lower than the heat-resistant temperature of the base substrate 9200. For example, by performing heat treatment at 400 to 600° C., the microstructure formed in the embrittlement layer 9203 can be reduced. A change in the deposition of cavities occurs, and separation (cleavage) along the embrittlement layer 9203 becomes possible. Since the bonding layer 9204 is bonded to the base substrate 9200, An SOI layer 9202 having the same crystallinity as the semiconductor substrate 9201 remains.

[0186] 16A and 16B show a process of forming an SOI layer by providing a bonding layer on the base substrate side. The ions accelerated by an electric field are applied to a semiconductor substrate 9201 on which a silicon oxide film 9221 is formed. The process of introducing hydrogen, helium, or the like to a predetermined depth to form an embrittlement layer 9203 is shown. The introduction of halogen ions, typically fluorine ions, is similar to that shown in FIG. By forming a silicon oxide film 9221 on the surface of the conductive substrate 9201, the This can prevent the surface from being damaged and the flatness from being lost.

[0187] FIG. 16B shows a base substrate 920 on which a barrier layer 9205 and a bonding layer 9204 are formed. 9201 and the surface of the semiconductor substrate 9201 on which the silicon oxide film 9221 is formed are brought into close contact with each other to form a bond. The bonding layer 9204 on the base substrate 9200 and the semiconductor substrate 9201 are shown. The silicon oxide film 9221 is brought into close contact with the substrate 9221 to form a bond.

[0188] Thereafter, the semiconductor substrate 9201 is separated as shown in FIG. The heat treatment is performed in the same manner as in the case of FIG. 15. In this way, the SOI shown in FIG. A substrate can be obtained.

[0189] As described above, according to this embodiment, the base substrate 9 such as a glass substrate having a heat-resistant temperature of 700° C. or less is Even if the thickness is 200, an SOI layer 9202 with strong adhesive strength at the junction can be obtained. As the substrate 9200, aluminosilicate glass, aluminoborosilicate glass, barium silicate glass, Various types of glass used in the electronics industry, such as borosilicate glass, which is called alkali-free glass. It is possible to apply a single crystal on a substrate that is more than 1 meter on a side. Such a large-area substrate can be used to produce a variety of displays, such as liquid crystal displays. Not only such a display device but also a semiconductor integrated circuit can be manufactured.

[0190] The manufacturing method and arrangement method of the semiconductor layer are not limited to the above. The film is formed on an insulating substrate by a method such as CVD, and a laser (linear laser, continuous solid-state laser) is emitted. The amorphous structure is formed by irradiating it with light (such as a laser) or by applying heat. By crystallizing silicon, it is possible to produce polycrystalline silicon and microcrystalline silicon. is.

[0191] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0192] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part can be implemented in a different manner. By combining parts of the embodiments, many more figures can be constructed. This embodiment may embody the contents (or even a part thereof) described in other embodiments. An example of a case where it has been slightly modified, an example of a case where it has been partially modified, an example of a case where it has been improved, Examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments may be applied to and combined with this embodiment. can be freely combined or substituted.

[0193] (Third embodiment) In this embodiment, the peripheral portion of the liquid crystal panel will be described.

[0194] FIG. 17 shows a backlight unit 5201 called an edge-light type and a liquid crystal panel 5 207. The edge light type is an example of a liquid crystal display device having a backlight unit. A light source is placed at the edge of the knit, and the fluorescent light from the light source is emitted from the entire light-emitting surface. The backlight unit of the LED type is thin and can save power.

[0195] The backlight unit 5201 includes a diffusion plate 5202, a light guide plate 5203, and a reflector 5204. , a lamp reflector 5205 and a light source 5206 .

[0196] The light source 5206 has a function of emitting light as needed. For example, the light source 5206 Cold cathode tubes, hot cathode tubes, light emitting diodes, inorganic EL or organic EL may be used.

[0197] 18(A), (B), (C) and (D) show edge-light type backlight units. 1 is a diagram showing a detailed configuration of the light emitting device 1. Note that the explanation of the diffusion plate, the light guide plate, the reflector, etc. will be omitted. do.

[0198] The backlight unit 5211 shown in FIG. 18(A) uses a cold cathode fluorescent lamp 5213 as a light source. In order to efficiently reflect the light from the cold cathode fluorescent lamp 5213, A pre-reflector 5212 is provided. This configuration reduces the intensity of the luminance from the cold cathode fluorescent lamp. Therefore, it is often used in large display devices.

[0199] The backlight unit 5221 shown in FIG. 18(B) uses a light emitting diode (LED) as a light source. For example, a white light emitting diode (LED) 5223 is used. 223 are arranged at predetermined intervals. And, light from the light emitting diode (LED) 5223 A lamp reflector 5222 is provided to efficiently reflect the light.

[0200] The backlight unit 5231 shown in FIG. 18(C) uses light-emitting diodes for each color RGB as a light source. Diode (LED) 5233, Light Emitting Diode (LED) 5234, Light Emitting Diode (L The configuration uses light-emitting diodes (LEDs) 5235 for each color RGB, The light emitting diode (LED) 5234 and the light emitting diode (LED) 5235 are RGB light-emitting diodes (LEDs) 5233, light-emitting diodes By using LED 5234 and LED 5235, color reproduction is possible. In addition, in order to efficiently reflect the light from the light emitting diode, Therefore, a lamp reflector 5232 is provided.

[0201] The backlight unit 5241 shown in FIG. 18(D) uses light-emitting diodes for each color RGB as a light source. Diode (LED) 5243, Light Emitting Diode (LED) 5244, Light Emitting Diode (L For example, the LEDs for each color (RGB) are 5 243, Light Emitting Diode (LED) 5244, Light Emitting Diode (LED) 5245 There are multiple light emitting diodes (L, R, G, B) for each color (e.g., green). Light Emitting Diode (LED) 5243, Light Emitting Diode (LED) 5244, Light Emitting Diode (LED) 524 By using LEDs, color reproducibility can be improved. A lamp reflector 5242 is provided to efficiently reflect the light from the lamp.

[0202] FIG. 21 shows a liquid crystal display having a backlight unit called a direct type and a liquid crystal panel. An example of the device is shown below. The direct type is a device that places a light source directly under the light-emitting surface, and the fluorescence of the light source is emitted. The direct backlight unit emits light from the entire light-emitting surface. It can be used efficiently.

[0203] The backlight unit 5290 includes a diffusion plate 5291, a light shielding plate 5292, a lamp reflector It is composed of a light source 5294, a liquid crystal panel 5295, and a light source 5293.

[0204] The light source 5294 has a function of emitting light as needed. For the display, cold cathode tubes, hot cathode tubes, light emitting diodes, inorganic EL, organic EL, etc. are used.

[0205] FIG. 19 is a diagram showing an example of the configuration of a polarizing plate (also called a polarizing film).

[0206] Polarizing film 5250 is made up of protective film 5251, substrate film 5252, and PVA polarizing film. Film 5253, substrate film 5254, adhesive layer 5255 and release film 5256 It has.

[0207] The PVA polarizing film 5253 is made of a base film (substrate film 5252 and Reliability can be increased by sandwiching the polarizer between the PVA polarizer and the substrate film 5254. Film 5253 is made of highly transparent and durable triacetylcellulose (TAC) film. The substrate film and the TAC film may be sandwiched between two PVA polarizing filters. It functions as a protective layer for the polarizer in the film 5253.

[0208] One of the substrate films (substrate film 5254) is made of a plastic film for adhering to the glass substrate of the liquid crystal panel. The adhesive layer 5255 is provided with an adhesive on one side of the substrate. It is formed by applying it to a plate film (substrate film 5254). is provided with a release film 5256 (separate film).

[0209] The other substrate film (substrate film 5252) is provided with a protective film 5251. are.

[0210] In addition, the surface of the polarizing film 5250 is provided with a hard coat scattering layer (anti-glare layer). The hard coat scattering layer may have fine irregularities formed on the surface by the AG treatment. It has an anti-glare function that scatters external light, preventing external light from being reflected on the LCD panel. Surface reflection can be prevented.

[0211] In addition, the surface of the polarizing film 5250 is multi-layered with multiple optical thin film layers with different refractive indices (An It may be possible to use multiple layers of reflections (also called reflection processing or AR processing). Optical thin film layers with different refractive indices can reduce the surface reflectance through the optical interference effect. do.

[0212] FIG. 20 is a diagram showing an example of a system block of a liquid crystal display device.

[0213] In the pixel portion 5265, a signal line 5269 is arranged extending from a signal line driver circuit 5263. In the pixel portion 5265, a scanning line 5260 is extended from a scanning line driver circuit 5264. A plurality of pixels are arranged in the intersection area between the signal line 5269 and the scanning line 5260. The pixels are arranged in a matrix. Each pixel has a switching element. Therefore, the voltage for controlling the tilt of the liquid crystal molecules is applied to each of the multiple pixels independently. In this way, the structure in which a switching element is provided in each intersection region can be This is called an active matrix type. However, it is not limited to this type of active matrix type. A passive matrix type may be used. In the passive matrix type, a switch is provided for each pixel. Since there is no switching element, the process is simple.

[0214] The driver circuit portion 5268 includes a control circuit 5262, a signal line driver circuit 5263, and a scanning line driver circuit. A video signal 5261 is input to the control circuit 5262. In response to this video signal 5261, the signal line driver circuit 5262 drives a signal line driver circuit 5263 and a scanning line driver circuit 5264. Therefore, the control circuit 5262 controls the signal line driver circuit 5263 and the A control signal is input to each scanning line driving circuit 5264. Then, in response to this control signal, The signal line driver circuit 5263 inputs a video signal to a signal line 5269, and the scanning line driver circuit 5264 264 inputs a scanning signal to a scanning line 5260. Then, the switching element is selected in response to a scanning signal, and a video signal is input to the pixel electrode of the pixel.

[0215] The control circuit 5262 also controls a power supply 5267 in response to the video signal 5261 . The power supply 5267 has a means for supplying power to the lighting means 5266. 6 is an edge-light type backlight unit or a direct type backlight unit. However, a front light can be used as the lighting means 5266. A front light is a light-emitting element and a light guide attached to the front side of the pixel unit to illuminate the entire unit. This lighting unit is a plate-shaped light unit made up of a body. , the pixel portion can be uniformly illuminated.

[0216] As shown in FIG. 20(B), the scanning line driver circuit 5264 includes a shift register 5271, a level The shift register 52 has circuits that function as a shifter 5272 and a buffer 5273. 71 receives signals such as a gate start pulse (GSP) and a gate clock signal (GCK). Be encouraged.

[0217] As shown in FIG. 20C, the signal line driver circuit 5263 includes a shift register 5281, a first a first latch 5282, a second latch 5283, a level shifter 5284, a buffer 5285, and The circuit that functions as a buffer 5285 is a circuit that amplifies a weak signal. The level shifter 5284 is a circuit that has the function of A signal such as a start pulse (SSP) is input to the first latch 5282, and data such as a video signal ( The second latch 5283 temporarily holds the latch (LAT) signal. This is called line sequential driving. If the pixel is driven by dot sequential driving rather than line sequential driving, the second latch is not required. can be done.

[0218] In this embodiment, various liquid crystal panels can be used. For example, a liquid crystal panel can be configured with a liquid crystal layer sealed between two substrates. On one substrate, a transistor, a capacitor element, a pixel electrode, an alignment film, etc. are formed. A polarizing plate, a retardation plate or a prism sheet is disposed on the opposite side of the upper surface of one of the substrates. On the other substrate, a color filter, a black matrix, and a counter electrode may be formed. On the other side of the upper surface of the other substrate, a polarizing plate or an alignment film is formed. A retardation film may be disposed. The color filter and the black matrix may be disposed on one side. The slits may be formed on the upper surface of one of the substrates. By arranging (grids), a three-dimensional display can be created.

[0219] The polarizing plate, the retardation plate, and the prism sheet are disposed between the two substrates. Alternatively, it can be integral with either of the two substrates. .

[0220] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0221] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part may be implemented in a different manner. By combining parts of the form, even more figures can be constructed.

[0222] This embodiment is a concrete embodiment of the contents (or a part thereof) described in other embodiments. An example of a slightly modified version, an example of a partially modified version, an example of an improved version , examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments are not applicable to or incorporated in this embodiment. can be freely combined or substituted.

[0223] (Fourth embodiment) In this embodiment, a pixel configuration and pixel operation applicable to a liquid crystal display device will be described. I will explain.

[0224] In this embodiment, the operation mode of the liquid crystal is TN (Twisted Ne matic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, MVA (Multi-do main Vertical Alignment) mode, PVA(Patterne) d Vertical Alignment mode, ASM (Axially Sym metric aligned Micro-cell) mode, OCB (Optica) Compensated Birefringence mode, FLC (Ferr oelectric Liquid Crystal) mode, AFLC (AntiFe It is possible to use modes such as the (electric Liquid Crystal) mode. Cut.

[0225] FIG. 22A is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device.

[0226] The pixel 5600 includes a transistor 5601, a liquid crystal element 5602, and a capacitor 5603. The gate of the transistor 5601 is connected to a wiring 5605. The first terminal of the transistor 5601 is connected to the wiring 5604. The electrode is connected to a first electrode of the liquid crystal element 5602 and a first electrode of the capacitor 5603. The second electrode of the capacitor 5602 corresponds to the counter electrode 5607. It is connected to wiring 5606.

[0227] The wiring 5604 functions as a signal line. The wiring 5605 functions as a scanning line. The transistor 5606 functions as a capacitance line. The transistor 5601 functions as a switch. The capacitor 5603 functions as a storage capacitor.

[0228] The transistor 5601 only needs to function as a switch. may be a P-channel type or an N-channel type.

[0229] FIG. 22(B) is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. 22(B) is a liquid crystal display device suitable for horizontal electric field mode (including IPS mode and FFS mode). FIG. 10 is a diagram illustrating an example of a pixel configuration that can be applied to the device.

[0230] The pixel 5610 includes a transistor 5611, a liquid crystal element 5612, and a capacitor 5613. The gate of the transistor 5611 is connected to a wiring 5615. The first terminal of the transistor 5611 is connected to the wiring 5614. The electrode is connected to a first electrode of the liquid crystal element 5612 and a first electrode of the capacitor 5613. A second electrode of the capacitor 5612 is connected to a wiring 5616. is connected to the wiring 5616.

[0231] The wiring 5614 functions as a signal line. The wiring 5615 functions as a scan line. The line 5616 functions as a capacitance line. The transistor 5611 functions as a switch. The capacitor 5613 functions as a storage capacitor.

[0232] The transistor 5611 only needs to function as a switch. may be a P-channel type or an N-channel type.

[0233] FIG. 23 is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. In particular, FIG. This is an example of a pixel configuration that can reduce the number of wirings and increase the aperture ratio of the pixel.

[0234] FIG. 23 shows two pixels (pixel 5620 and pixel 5630) arranged in the same column direction. For example, if pixel 5620 is located on row N, pixel 5630 is located on row N+1. are placed.

[0235] The pixel 5620 includes a transistor 5621, a liquid crystal element 5622, and a capacitor 5623. The gate of the transistor 5621 is connected to a wiring 5625. The first terminal of the transistor 5621 is connected to the wiring 5624. The electrode is connected to a first electrode of the liquid crystal element 5622 and a first electrode of the capacitor 5623. The second electrode of the capacitor 5622 corresponds to the counter electrode 5627. It is connected to the same wiring as the gate of the transistor in the previous row.

[0236] The pixel 5630 includes a transistor 5631, a liquid crystal element 5632, and a capacitor 5633. The gate of the transistor 5631 is connected to a wiring 5635. The first terminal of the transistor 5631 is connected to the wiring 5624. The electrode is connected to a first electrode of the liquid crystal element 5632 and a first electrode of the capacitor 5633. The second electrode of the capacitor 5632 corresponds to the counter electrode 5637. The second electrode of the capacitor 5633 corresponds to the counter electrode 5637. It is connected to the same wiring (wiring 5625) as the gate of the transistor in the previous row.

[0237] The wiring 5624 functions as a signal line. The wiring 5625 functions as a scanning line for the Nth row. The wiring 5625 also functions as a capacitor line of the (N+1)th stage. The capacitor 5621 functions as a switch. The capacitor 5623 functions as a storage capacitor.

[0238] The wiring 5635 functions as a scanning line for the (N+1)th row. The transistor 5631 also functions as a switch. The element 5633 functions as a storage capacitor.

[0239] The transistors 5621 and 5631 only need to function as switches. The polarity of the transistor 5621 and the polarity of the transistor 5631 may be P-channel type. An N-channel type may also be used.

[0240] FIG. 24 is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. In particular, FIG. This is an example of a pixel configuration that can improve the viewing angle by using sub-pixels.

[0241] The pixel 5659 has a sub-pixel 5640 and a sub-pixel 5650. Although the case where there are two sub-pixels will be described, pixel 5659 has three or more sub-pixels. It may have an element.

[0242] The sub-pixel 5640 includes a transistor 5641, a liquid crystal element 5642, and a capacitor 5643. The gate of the transistor 5641 is connected to a wiring 5645. A first terminal of the transistor 5641 is connected to a wiring 5644. The second terminal is connected to a first electrode of the liquid crystal element 5642 and a first electrode of the capacitor element 5643. The second electrode of the crystal element 5642 corresponds to the counter electrode 5647. The pole is connected to wire 5646.

[0243] The sub-pixel 5650 includes a transistor 5651, a liquid crystal element 5652, and a capacitor element 5653. The gate of the transistor 5651 is connected to a wiring 5655. The first terminal of the transistor 5651 is connected to the wiring 5644. The second terminal is connected to a first electrode of the liquid crystal element 5652 and a first electrode of the capacitor element 5653. The second electrode of the crystal element 5652 corresponds to the counter electrode 5657. The pole is connected to wire 5646.

[0244] The wiring 5644 functions as a signal line. The wiring 5645 functions as a scan line. The wiring 5646 functions as a capacitance line. The transistor 5641 functions as a switch. The transistor 5651 functions as a switch. The capacitor 5643 functions as a storage capacitor. It works like this.

[0245] The transistor 5641 only needs to function as a switch. The transistor 5651 may be a P-channel type or an N-channel type. The polarity of the transistor 5651 may be a P-channel type or an N-channel type. It may also be of the ru type.

[0246] The video signal input to the sub-pixel 5640 is the same as the video signal input to the sub-pixel 5650. In this case, the orientation of the liquid crystal molecules of the liquid crystal element 5642 may be changed to that of the liquid crystal element 565. Since the orientation of the liquid crystal molecules in the first and second liquid crystal panels can be made different from that in the first and second liquid crystal panels, the viewing angle can be widened.

[0247] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0248] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part may be implemented in a different manner. By combining parts of the form, even more figures can be constructed.

[0249] This embodiment is a concrete embodiment of the contents (or a part thereof) described in other embodiments. An example of a slightly modified version, an example of a partially modified version, an example of an improved version , examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments are not applicable to or incorporated in this embodiment. can be freely combined or substituted.

[0250] (Fifth embodiment) In this embodiment, the pixel structure of the display device will be described. The pixel structure of a display device using the above will be described.

[0251] FIG. 25(A) is a top view (layout) of a pixel having two transistors in one pixel. FIG. 25(B) is an example of a cross-sectional view of the X-X' portion shown in FIG. 25(A). is.

[0252] FIG. 25A shows a first transistor 6005, a first wiring 6006, a second wiring 6007, and a 07, a second transistor 6008, a third wiring 6011, a counter electrode 6012, a capacitor 6013, pixel electrode 6015, partition wall 6016, organic conductive film 6017, organic thin film 601 8 and a substrate 6019. The first transistor 6005 is a switching transistor. As a transistor, the first wiring 6006 is a gate signal line, and the second wiring 6007 is a The second transistor 6008 is connected as a source signal line, the third transistor 6009 is connected as a driving transistor, and the The wiring 6011 is preferably used as a current supply line.

[0253] The gate electrode of the first transistor 6005 is electrically connected to a first wiring 6006. One of the source electrode and the drain electrode of the first transistor 6005 is connected to the second wiring 60 07, and the source electrode and the drain electrode of the first transistor 6005 The other is connected to the gate electrode of the second transistor 6008 and one electrode of the capacitor 6013. The gate electrode of the first transistor 6005 is electrically connected to a plurality of This makes it possible to form an on-state of the first transistor 6005. This can reduce the leakage current in the OFF state.

[0254] One of the source electrode and the drain electrode of the second transistor 6008 is connected to the third wiring 60 11, and the source electrode and the drain electrode of the second transistor 6008 The other end is electrically connected to the pixel electrode 6015. The current flowing through 5 can be controlled by the second transistor 6008.

[0255] An organic conductive film 6017 is provided on the pixel electrode 6015, and an organic thin film 6018 On the organic thin film 6018 (organic compound layer), a counter electrode The counter electrode 6012 is connected in common to all pixels. It may be formed on the entire surface, or may be patterned using a shadow mask or the like. It may be possible.

[0256] The light emitted from the organic thin film 6018 (organic compound layer) is incident on the pixel electrode 6015 or the counter electrode 6016. It is emitted through one of the poles 6012.

[0257] In FIG. 25(B), the light is directed to the pixel electrode side, that is, the side where the transistors and the like are formed. When light is emitted from the opposite electrode side, it is called bottom emission, and when light is emitted from the opposite electrode side, it is called top emission.

[0258] In the case of bottom emission, the pixel electrode 6015 is preferably formed by a transparent conductive film. Conversely, in the case of top emission, the counter electrode 6012 is preferably formed of a transparent conductive film. do.

[0259] In color display light-emitting devices, EL elements that emit R, G, and B light are painted on the surface. It can be divided into two parts, or a single-color EL element can be applied to the entire surface, and R, G, and B light can be emitted by a color filter. It may also be possible to obtain light.

[0260] The configuration shown in FIG. 25 is merely an example, and the pixel layout, cross-sectional configuration, and EL element Regarding the stacking order of the electrodes, various configurations other than that shown in Figure 25 can be used. In addition to the element made of organic thin film shown in the figure, the light-emitting layer can also be made of crystalline material such as LED. Various elements can be used, such as organic elements and elements made of inorganic thin films.

[0261] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0262] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part may be implemented in a different manner. By combining parts of the form, even more figures can be constructed.

[0263] This embodiment is a concrete embodiment of the contents (or a part thereof) described in other embodiments. An example of a slightly modified version, an example of a partially modified version, an example of an improved version , examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments are not applicable to or incorporated in this embodiment. can be freely combined or substituted.

[0264] (Sixth embodiment) In this embodiment, an example of an electronic device will be described.

[0265] FIG. 26 shows a display panel module that combines a display panel 9601 and a circuit board 9605. The display panel 9601 includes a pixel portion 9602, a scanning line driver circuit 9603, and a signal The circuit board 9605 includes, for example, a control circuit The display panel 9601 and the circuit board 9602 are formed on the substrate 9606 and the signal dividing circuit 9607. The board 9605 is connected by a connection wiring 9608. An FPC or the like is used for the connection wiring. It is possible.

[0266] Fig. 27 is a block diagram showing the main components of a television receiver. The video signal is received by a video signal amplifier circuit 9612 and a video signal amplifier circuit 9613. A video signal converting the signal output from the circuit 9612 into a color signal corresponding to each of the colors red, green, and blue. A signal processing circuit 9613 and a controller for converting the video signal into the input specifications of the driver circuit. The control circuit 9622 processes the scan line driving circuit 962. 4 and the signal line driver circuit 9614. 4 and a signal line driver circuit 9614 drive the display panel 9621. A signal dividing circuit 9623 is provided on the signal line side, and the input digital signal is divided into m pieces (m is a positive integer) The amount of the liquid may be divided into two parts and supplied separately.

[0267] Of the signals received by the tuner 9611, the audio signal is sent to an audio signal amplifier circuit 9615. The output is supplied to a speaker 9617 via an audio signal processing circuit 9616. The circuit 9618 receives control information for the receiving station (receiving frequency) and volume from the input unit 9619, The signal is sent to the speaker 9611 or the audio signal processing circuit 9616.

[0268] Regarding a television receiver incorporating a display panel module of a different form from that of FIG. 27, FIG. 28 In FIG. 28A, a display screen 9632 housed in a housing 9631 is , and is formed by a display panel module. In addition, a speaker 9633, an input means (operation key 9 634, connection terminal 9635, sensor 9636 (force, displacement, position, velocity, acceleration, angular velocity, Rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, (including functions to measure power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) , microphone 9637) may be provided as appropriate.

[0269] FIG. 28(B) shows a television receiver in which only the display can be carried wirelessly. This television receiver includes a display unit 9643, a speaker unit 9647, and an input means (operation keys 9648). 646, connection terminal 9648, sensor 9649 (force, displacement, position, velocity, acceleration, angular velocity, Rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, (including functions to measure power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) The housing 9642 is provided with a battery and The battery powers the display unit 9643 and the speaker unit 9647. , powers the sensor 9649 and microphone 9641. The battery is charged by the charger 964 0, it can be repeatedly charged. Charger 9640 can send and receive video signals. This function allows the video signal to be transmitted to the display's signal receiver. The device shown in FIG. 28(B) is controlled by an operation key 9646. The device can send a signal to the charger 9640 by operating the operation key 9646. In other words, it may be a two-way audio and video communication device. The illustrated device sends a signal to the charger 9640 by operating the operation key 9646, Furthermore, by allowing other electronic devices to receive the signals that the charger 9640 can transmit, It is also possible to control the communication of electronic devices. In other words, it may be a general-purpose remote control device. The contents (or a part thereof) described in each of the drawings of the embodiment can be applied to the display portion 9643. can.

[0270] Next, an example of the configuration of a mobile phone will be described with reference to FIG.

[0271] The display panel 9662 is detachably mounted in the housing 9650. The shape or dimensions of the display panel 9662 can be changed as needed. The housing 9650 to which the display panel 9662 is fixed is fitted into the printed circuit board 9651. and assembled into modules.

[0272] The display panel 9662 is connected to the printed circuit board 9651 via an FPC 9663. The print board 9651 includes a speaker 9652, a microphone 9653, a transmitting / receiving circuit 96 54, a signal processing circuit 9655 including a CPU, a controller, etc., and a sensor 9661 (force, Displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound Voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, The module includes a function to measure infrared rays. The key 9656, battery 9657, and antenna 9660 are combined and stored in the housing 9659. The pixel portion of the display panel 9662 can be seen through an opening formed in the housing 9659. Place it as follows.

[0273] The display panel 9662 includes a pixel section and a part of peripheral driving circuits (a plurality of driving circuits with an operating frequency A low number of drive circuits) are integrated on the substrate using transistors, and some peripheral drive circuits ( A drive circuit with a high operating frequency among multiple drive circuits is formed on an IC chip, and the IC chip The chip may be mounted on the display panel 9662 using COG (Chip On Glass). Alternatively, the IC chip can be attached by TAB (Tape Auto Bonding) or by printing. A glass substrate may be used for connection to the display device. This reduces power consumption and extends the usage time of the mobile phone on a single charge. The cost of the mobile phone can be reduced.

[0274] The mobile phone shown in Figure 29 displays various information (still images, videos, text images, etc.). It has the function of displaying the calendar, date, time, etc. on the display unit. It has the function to operate or edit the information displayed on the screen. It has a function to control processing by wireless communication. It has a function to communicate with other devices using wireless communication. It has the function of communicating with mobile phones, landlines or voice communication devices. It has the ability to connect to various computer networks. It uses wireless communication functions to It has the function of sending or receiving data. In response to an incoming call, data reception, or alarm. It has a vibrator function that makes a sound in response to an incoming call, data reception, or alarm. The functions of the mobile phone shown in FIG. 29 are not limited to these. , can have a variety of functions.

[0275] FIG. 30(A) shows a display, which includes a housing 9671, a support 9672, and a display portion 9673. , speaker 9677, LED lamp 9679, input means (connection terminal 9674, sensor 96 75 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical Chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration , including the function of measuring odor or infrared), microphone 9676, operation key 9 678) and the like. The display shown in FIG. 30(A) displays various information (still images, moving images, text, etc. The display shown in Figure 30(A) has a function to display text images, etc. The functions of a ray are not limited to these, and it can have a variety of functions.

[0276] FIG. 30B shows a camera, which includes a main body 9691, a display unit 9692, and a shutter button 96 96, speaker 9700, LED lamp 9701, input means (image receiving unit 9693, operation key 9694, external connection port 9695, connection terminal 9697, sensor 9698 (force, displacement, position Position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time , hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared rays (including a function to measure the temperature), microphone 9699), etc. The camera has the function of taking still images and the function of taking videos. It has the function to automatically correct (still images, video) and save the captured images to a recording medium (external or digital). It has the function to save the captured image to a digital camera (built-in). It also has the function to display the captured image on the display. The functions of the camera shown in FIG. 30(B) are not limited to these, and various functions are available. It can have:

[0277] FIG. 30C shows a computer, which includes a main body 9711, a housing 9712, a display portion 9713, Speaker 9720, LED lamp 9721, reader / writer 9722, input means (keyboard Card 9714, external connection port 9715, pointing device 9716, connection terminal 9 717, Sensor 9718 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, Liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate , humidity, gradient, vibration, odor or infrared measurement functions), microphone 9 719) and the like. The computer shown in FIG. 30(C) can process various information (still images, video, text, etc.). It has the function to display various software (programs) such as text images on the display unit. It has a function to control processing by wireless communication or wired communication. It has the ability to connect to various computer networks using communication functions. It has the function of transmitting or receiving various data using the controller shown in FIG. The functions of the computer are not limited to these, and the computer may have a variety of functions.

[0278] FIG. 37(A) shows a mobile computer, which includes a main body 9791, a display unit 9792, a switch 9793, speaker 9799, LED lamp 9800, input means (operation keys 9794, Infrared port 9795, connection terminal 9796, sensor 9797 (force, displacement, position, velocity, Speed, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field , current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement equipment 9798) and microphones, etc. The computer has the function of displaying various information (still images, videos, text images, etc.) on the display. The display has a touch panel function. It displays the calendar, date, time, etc. The display has the function to control the processing by various software (programs). It has wireless communication capabilities. It can be used to connect to various computer networks. It has the function of connecting to the network and transmits or receives various data using wireless communication functions. The functions of the mobile computer shown in Figure 37(A) are not limited to these. The function is not limited and can have a variety of functions.

[0279] FIG. 37(B) shows a portable image reproducing device (for example, a DVD reproducing device) equipped with a recording medium. A main body 9811, a housing 9812, a display unit A 9813, a display unit B 9814, a speaker unit 9817, LED lamp 9821, input means (recording medium (DVD, etc.) reading unit 981 5, operation keys 9816, connection terminals 9818, sensors 9819 (force, displacement, position, speed, acceleration) Speed, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field , current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement equipment The display unit A9813 is mainly used for displaying images. The display unit B9814 is mainly capable of displaying text information.

[0280] FIG. 37(C) shows a goggle-type display, which includes a main body 9031, a display unit 9032, and earphones. A phone 9033, a support part 9034, an LED lamp 9039, a speaker 9038, an input means ( Connection terminal 9035, sensor 9036 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including those that measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), microphone The goggle-type display shown in Figure 37(C) can be viewed from the outside. It has the function to display the acquired images (still images, videos, text images, etc.) on the display unit. The functions of the goggle-type display shown in FIG. 37(C) are not limited to this, and various It can have such functions.

[0281] FIG. 38(A) shows a portable gaming machine, which includes a housing 9851, a display unit 9852, a speaker unit 98 53, a storage medium insertion portion 9855, an LED lamp 9859, an input means (operation keys 9854, Connection terminal 9856, sensor 9857 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including those that measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), microphone The portable gaming machine shown in FIG. 38(A) includes a game machine recorded on a recording medium. It has the function of reading out the programs or data stored in the device and displaying them on the display unit. It has the function of sharing information with the mobile device by wireless communication. The functions of the gaming machine are not limited to these, and the gaming machine may have a variety of functions.

[0282] FIG. 38(B) shows a digital camera with a television receiving function, which includes a main body 9861 and a display unit 98 62, speaker 9864, shutter button 9865, LED lamp 9871, input means (Operation key 9863, image receiving unit 9866, antenna 9867, connection terminal 9868, sensor 9 869 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration (including those with the function of measuring movement, smell or infrared rays), microphone 9870) The digital camera with a television receiver shown in Figure 38(B) has a function to take still images. It has a function to shoot video. It has a function to automatically correct the captured image. It has the function of acquiring various information from the camera. It has the function to save the captured image or the information acquired from the antenna on the display. The digital camera with a TV receiver shown in Figure 38(B) has the following functions: The functions are not limited to these, and various other functions may be provided.

[0283] FIG. 39 shows a portable gaming machine, which includes a housing 9881, a first display unit 9882, and a second display unit 988. 3, speaker unit 9884, recording medium insertion unit 9886, LED lamp 9890, input means ( Operation key 9885, connection terminal 9887, sensor 9888 (force, displacement, position, speed, acceleration , angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, The function of measuring current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared The portable gaming machine shown in FIG. 39 includes a recording medium It has the function of reading out the programs or data recorded in the body and displaying them on the display unit. It has the function of sharing information with other portable gaming machines through wireless communication. The functions of the portable gaming machine are not limited to these, and the portable gaming machine may have a variety of functions.

[0284] 30(A) to (C), 37(A) to (C), 38(A) to (C), and As shown in 39, electronic devices have a display unit for displaying some information. The electronic device has a feature that it consumes little power and can be driven by batteries for a long time. The manufacturing method is simple, and the manufacturing cost can be kept low.

[0285] Next, application examples of the semiconductor device will be described.

[0286] FIG. 31 shows an example in which a semiconductor device is integrated with a building. 9730, a display unit 9731, a remote control device 9732 which is an operation unit, a speaker unit 9733, etc. The semiconductor device is a wall-mounted type that is integrated with the building, and it occupies a large space for installation. It can be installed without the need for a

[0287] FIG. 32 shows another example in which a semiconductor device is provided inside a building as an integral part of the building. The display panel 9741 is attached to the unit bath 9742, and bathers can see the display panel. The display panel 9741 can be operated by the bather to display information. It has the function of displaying information, and it has the function of being used as an advertising or entertainment means.

[0288] The semiconductor device may be used not only on the side wall of the unit bath 9742 shown in FIG. It can be installed in any location, for example as part of the mirror or integrated into the bathtub itself. In this case, the shape of the display panel 9741 may be adapted to the shape of the mirror surface or the bathtub. It may also be the same as the above.

[0289] Another example of a semiconductor device being integrated with a building is shown in Figure 33. 9752 is curved to fit the curved surface of the columnar body 9751. Here, the pillar 9751 will be described as a utility pole.

[0290] The display panel 9752 shown in Figure 33 is installed at a position higher than the human eye level. By installing the display panel 9752 on the buildings that stand in a forest outdoors, Here, the display panel 9752 can be controlled from the outside. This makes it easy to display the same image and switch images instantly. Extremely efficient information display and advertising effects can be expected. By providing a display element, it is said to be useful as a highly visible display medium even at night. By installing it on a utility pole, it is easy to secure a means for supplying power to the display panel 9752. In the event of a disaster or other emergency, it can also be used to quickly convey accurate information to victims. obtain.

[0291] The display panel 9752 may be, for example, a film-like substrate having an organic transistor A display device that displays an image by driving a display element using a switching element such as A panel can be used.

[0292] In this embodiment, a wall, a pillar, and a unit bath are used as examples of buildings. The present embodiment is not limited to this, and the semiconductor device can be installed in various buildings.

[0293] Next, an example in which the semiconductor device is integrated with a moving object will be described.

[0294] FIG. 34 is a diagram showing an example in which a semiconductor device is integrated with an automobile. The panel 9762 is attached integrally to the body 9761 of the automobile, and is Information input from inside and outside the vehicle can be displayed on demand. It may also have an application function.

[0295] The semiconductor device may be installed in various places, not just the car body 9761 shown in FIG. For example, glass windows, doors, steering wheels, shift levers, seats, In this case, the shape of the display panel 9762 may be determined by the type of the display panel to be installed. The shape may be adapted to the shape of the

[0296] FIG. 35 is a diagram showing an example in which a semiconductor device is provided integrally with a train vehicle.

[0297] FIG. 35(a) shows an example in which a display panel 9772 is provided on the glass of a door 9771 of a train car. This is a diagram showing the number of people required to switch advertisements compared to traditional paper advertisements. The display panel 9772 has the advantage of being inexpensive. It is possible to instantly switch between images displayed on the screen, so for example, The images on the display panel can be switched depending on the time of day when the types of passengers getting off change, making it more efficient. Effective advertising effects can be expected.

[0298] FIG. 35(b) shows the glass of the train car door 9771, as well as the glass window 9773 and the ceiling. This is a diagram showing an example in which a display panel 9772 is provided in a well 9774. The body device can be easily installed in places where installation was previously difficult, and is therefore effective. The semiconductor device displays a message on the display unit in response to an external signal. Since it is possible to instantly switch between images, the cost of switching advertisements and This saves time and allows for more flexible advertising and information transmission.

[0299] The semiconductor device is attached to the door 9771, the glass window 9773, and the ceiling 97 shown in FIG. It can be installed in various places, not just 74. For example, on hand straps and seats. In this case, the shape of the display panel 9772 may be determined by the shape of the panel when it is installed. The shape may be adapted to the shape of the object.

[0300] FIG. 36 is a diagram showing an example in which a semiconductor device is integrated with a passenger airplane. .

[0301] FIG. 36(a) shows a passenger airplane in which a display panel 9782 is provided on a ceiling 9781 above the seats. The display panel 9782 is attached to the ceiling 9781. and are attached together via a hinge part 9783, and the expansion and contraction of the hinge part 9783 Passengers can view the display panel 9782. The display panel 9782 can be operated by passengers. It has the function of displaying information in a variety of ways, and can be used as an advertisement or entertainment tool. As shown in 36(b), the hinge part can be folded and stored in the ceiling 9781, allowing for easy access. This allows for safety during landing. In the event of an emergency, the display elements on the display panel can be turned on. This makes it possible to use it as a means of transmitting information and as an emergency light.

[0302] The semiconductor device may be installed in various places, not just the ceiling 9781 shown in FIG. For example, it may be integrated with a seat, seat table, armrest, window, etc. A large display panel that can be viewed by many people at the same time may be installed on the wall of the aircraft. The shape of the display panel 9782 may be adapted to the shape of the object on which it is installed. stomach.

[0303] In this embodiment, the moving body may be a train car body, an automobile body, an airplane body, or the like. However, it is not limited to these examples, and includes motorcycles, four-wheeled vehicles (including cars, buses, etc.) ), trains (including monorails, railways, etc.), ships, etc. The semiconductor device can instantly switch the display on the display panel inside the vehicle in response to an external signal. Therefore, by installing a semiconductor device on a moving object, the moving object can be To be used for purposes such as advertising boards targeting a large number of customers, information boards in the event of a disaster, etc. This becomes possible.

[0304] In this embodiment, various drawings have been used to describe the present invention. (Part of it may be) indicates application or combination of the contents (part of it may be) described in another figure. , or substitutions can be freely made. Furthermore, in the diagrams mentioned above, For each part, combine other parts to form more figures. It is possible.

[0305] Similarly, the contents (or even a part thereof) described in each drawing of this embodiment may be applied to other embodiments. The contents described in the diagram (even a part of them) can be freely applied, combined, or replaced. Furthermore, in the drawings of this embodiment, each part may be implemented in a different manner. By combining parts of the form, even more figures can be constructed.

[0306] This embodiment is a concrete embodiment of the contents (or a part thereof) described in other embodiments. An example of a slightly modified version, an example of a partially modified version, an example of an improved version , examples of detailed descriptions, examples of applications, examples of related parts, etc. Therefore, the contents described in the other embodiments are not applicable to or incorporated in this embodiment. can be freely combined or substituted. [Explanation of symbols]

[0307] 101 Insulating substrate 102 Semiconductor layer 102AA Semiconductor layer 102BB Semiconductor layer 103 Insulating layer 104 Conductive layer 104A Gate electrode 104B Gate electrode 104C conductive layer 104AA Gate electrode 201 Insulating layer 202 Semiconductor layer 202A Semiconductor layer 202B Semiconductor layer 202C Semiconductor layer 202E Semiconductor layer 203 Transistor 301 Conductive layer 301A Conductive layer 301B Conductive layer 301C conductive layer 301D conductive layer 301E conductive layer 301F conductive layer 301G conductive layer 301H conductive layer 301AA power line 301BB output wiring 301CC power line 303 Transistor 401 Insulating layer 501A Contact Hole 501B Contact Hole 501C Contact Hole 501D Contact Hole 501E Contact Hole 501F Contact Hole 501G Contact Hole 501H Contact Hole 501AA Contact Hole 501BB Contact Hole 601 Conductive layer 601A conductive layer 601B Conductive layer 601C conductive layer 601D Conductive Layer 601E conductive layer 601AA Conductive layer 601BB conductive layer 601CC conductive layer 901A Contact Hole 901B Contact Hole 1001 Insulation layer 1002 Semiconductor layer 1003A Semiconductor layer 1003B Semiconductor layer 5201 Backlight Unit 5202 Diffuser 5203 Light guide plate 5204 Reflector 5205 Lamp reflector 5206 Light source 5207 LCD panel 5211 Backlight Unit 5212 Lamp reflector 5213 cold cathode tube 5221 Backlight Unit 5222 Lamp reflector 5223 Light Emitting Diode (LED) 5231 Backlight Unit 5232 Lamp reflector 5233 Light Emitting Diode (LED) 5234 Light Emitting Diode (LED) 5235 Light Emitting Diode (LED) 5241 Backlight Unit 5242 Lamp reflector 5243 Light Emitting Diode (LED) 5244 Light Emitting Diode (LED) 5245 Light Emitting Diode (LED) 5250 Polarizing Film 5251 Protective Film 5252 Substrate film 5253 PVA polarized film 5254 Substrate film 5255 Adhesive layer 5256 Release film 5261 Video signal 5262 Control circuit 5263 Signal line driver circuit 5264 Scanning line driver circuit 5265 Pixel section 5266 Lighting means 5267 Power supply 5268 Drive circuit section 5260 scan lines 5269 Signal Line 5271 Shift Register 5272 Level Shifter 5273 buffers 5281 Shift Register 5282 Latch 5283 Latch 5284 Level Shifter 5285 buffers 5290 Backlight Unit 5291 Diffuser 5292 Shade 5293 Lamp Reflector 5294 light source 5295 LCD panel 5600 pixels 5601 Transistor 5602 Liquid crystal element 5603 Capacitor 5604 Wiring 5605 Wiring 5606 Wiring 5607 Counter electrode 5610 pixels 5611 Transistor 5612 Liquid crystal element 5613 Capacitor 5614 Wiring 5615 Wiring 5616 Wiring 5620 pixels 5621 Transistor 5622 Liquid crystal element 5623 Capacitor 5624 Wiring 5625 Wiring 5627 Counter electrode 5630 pixels 5631 Transistor 5632 Liquid crystal element 5633 Capacitor 5635 Wiring 5637 Counter electrode 5640 subpixels 5641 Transistor 5642 Liquid crystal element 5643 Capacitor 5644 Wiring 5645 Wiring 5646 Wiring 5647 Counter electrode 5650 subpixels 5651 Transistor 5652 Liquid crystal element 5653 Capacitor 5655 Wiring 5657 Counter electrode 5659 pixels 6005 Transistor 6006 Wiring 6007 Wiring 6008 Transistor 6011 Wiring 6012 Counter electrode 6013 capacitor 6015 Pixel electrode 6016 Bulkhead 6017 Organic conductive film 6018 Organic thin film 6019 substrate 9031 Main Unit 9032 Display section 9033 Earphones 9034 Support part 9035 Connection terminal 9036 Sensor 9037 Microphone 9038 Speaker 9039 LED Lamp 9200 base board 9201 Semiconductor substrates 9202 SOI layer 9203 Brittle layer 9204 Bonding layer 9205 Barrier layer 9220 Nitrogen-containing insulating layer 9221 Silicon oxide film 9601 Display Panel 9602 Pixel section 9603 Scanning line driver circuit 9604 Signal line driver circuit 9605 Circuit Board 9606 Control Circuit 9607 Signal splitting circuit 9608 Connection wiring 9611 Tuner 9612 Video signal amplifier circuit 9613 Video signal processing circuit 9614 Signal line driver circuit 9615 Audio signal amplifier circuit 9616 Audio signal processing circuit 9617 Speaker 9618 Control circuit 9619 Input section 9621 Display Panel 9622 Control Circuit 9623 Signal splitting circuit 9624 Scanning line driver circuit 9631 Case 9632 Display screen 9633 Speaker 9634 Operation key 9635 Connection terminal 9636 Sensor 9637 Microphone 9640 charger 9642 Case 9643 Display section 9646 Operation Key 9647 Speaker section 9648 Connection terminal 9649 Sensor 9641 Microphone 9662 Display Panel 9663 FPC 9650 Housing 9651 Printed Circuit Board 9652 Speaker 9653 Microphone 9654 Transmitting and receiving circuit 9655 Signal Processing Circuit 9656 Operation Key 9657 Battery 9659 Case 9660 Antenna 9661 Sensor 9671 Case 9672 Support stand 9673 Display section 9674 Connection terminal 9675 Sensor 9676 Microphone 9677 Speaker 9678 Operation Key 9679 LED Lamp 9691 Main Unit 9692 Display section 9693 Image receiving unit 9694 Operation Key 9695 External connection port 9696 Shutter button 9697 Connection terminal 9698 Sensor 9699 Microphone 9700 Speaker 9701 LED Lamp 9711 Main unit 9712 Case 9713 Display section 9714 Input means (keyboard 9715 External connection port 9716 Pointing Device 9717 Connection terminal 9718 Sensor 9719 Microphone 9720 Speaker 9721 LED Lamp 9722 Reader / Writer 9730 chassis 9731 Display section 9732 Remote control device 9733 Speaker section 9741 Display Panel 9742 Unit bath 9751 Columnar body 9752 Display Panel 9761 Body 9762 Display Panel 9771 Door 9772 Display Panel 9773 Glass window 9774 Ceiling 9781 Ceiling 9782 Display Panel 9783 Hinge part 9791 Main unit 9792 Display section 9793 Switch 9794 Input means (operation keys 9795 Infrared port 9796 Connection terminal 9797 Sensor 9798 Microphone 9799 Speaker 9800 LED lamp 9811 main unit 9812 chassis 9813 Display section A 9814 Display part B 9815 copies 9816 Operation Key 9817 Speaker section 9818 Connection terminal 9819 Sensor 9820 Microphone 9821 LED Lamp 9031 Main Unit 9032 Display section 9033 Earphones 9034 Support part 9035 Connection terminal 9036 Sensor 9037 Microphone 9038 Speaker 9851 Case 9852 Display section 9853 Speaker section 9854 Operation key 9855 Storage media insertion section 9856 Connection terminal 9857 Sensor 9858 Microphone 9859 LED Lamp 9861 Main Unit 9862 Display section 9863 Operation Key 9864 Speaker 9865 Shutter button 9866 Image receiving unit 9867 Antenna 9868 Connection terminal 9869 Sensor 9870 Microphone 9871 LED Lamp 9881 Case 9882 Display section 9883 Display section 9884 Speaker section 9885 Operation Key 9886 Recording medium insertion section 9887 Connection terminal 9888 Sensor 9889 Microphone 9890 LED Lamp

Claims

1. A display device having a first transistor and a second transistor, a first insulating layer over a flexible substrate; a first semiconductor layer having a region in contact with an upper surface of the first insulating layer and having a channel formation region of the first transistor; a second insulating layer having a region located above the first semiconductor layer; a first conductive layer and a second conductive layer having a region in contact with an upper surface of the second insulating layer; a third insulating layer having a region located above the first conductive layer and a region located above the second conductive layer; a first oxide semiconductor layer and a second oxide semiconductor layer having a region in contact with an upper surface of the third insulating layer; a third conductive layer having a region in contact with an upper surface of the first oxide semiconductor layer; a fourth conductive layer having a region in contact with an upper surface of the second oxide semiconductor layer; a fourth insulating layer having a region located above the third conductive layer and a region located above the fourth conductive layer; the first conductive layer has the same material as the second conductive layer; the third conductive layer has the same material as the fourth conductive layer; the first semiconductor layer comprises crystalline silicon and is electrically connected to the fourth conductive layer; the first conductive layer has a region overlapping with the first semiconductor layer with the second insulating layer interposed therebetween and functions as a gate electrode of the first transistor; the first oxide semiconductor layer has a region overlapping with the second conductive layer with the second insulating layer interposed therebetween; the second conductive layer functions as a gate electrode of the second transistor, the first oxide semiconductor layer has a channel formation region of the second transistor; The display device, wherein the second oxide semiconductor layer does not have a channel formation region of a transistor.

2. A display device having a first transistor and a second transistor, a first insulating layer over a flexible substrate; a first semiconductor layer having a region in contact with an upper surface of the first insulating layer and having a channel formation region of the first transistor; a second insulating layer having a region located above the first semiconductor layer; a first conductive layer and a second conductive layer having a region in contact with an upper surface of the second insulating layer; a third insulating layer having a region located above the first conductive layer and a region located above the second conductive layer; a first oxide semiconductor layer and a second oxide semiconductor layer having a region in contact with an upper surface of the third insulating layer; a third conductive layer having a region in contact with an upper surface of the first oxide semiconductor layer; a fourth conductive layer having a region in contact with an upper surface of the second oxide semiconductor layer; a fourth insulating layer having a region located above the third conductive layer and a region located above the fourth conductive layer; a fifth conductive layer having a region in contact with an upper surface of the fourth insulating layer and a region in contact with an upper surface of the first semiconductor layer; the first conductive layer has the same material as the second conductive layer; the third conductive layer has the same material as the fourth conductive layer; the first semiconductor layer comprises crystalline silicon and is electrically connected to the fourth conductive layer; the first conductive layer has a region overlapping with the first semiconductor layer with the second insulating layer interposed therebetween and functions as a gate electrode of the first transistor; the first oxide semiconductor layer has a region overlapping with the second conductive layer with the second insulating layer interposed therebetween; the second conductive layer functions as a gate electrode of the second transistor, the fifth conductive layer has a function as a first wiring, the first oxide semiconductor layer has a channel formation region of the second transistor; The display device, wherein the second oxide semiconductor layer does not have a channel formation region of a transistor.

3. A display device having a first transistor and a second transistor, a first insulating layer over a flexible substrate; a first semiconductor layer having a region in contact with an upper surface of the first insulating layer and having a channel formation region of the first transistor; a second insulating layer having a region located above the first semiconductor layer; a first conductive layer and a second conductive layer having a region in contact with an upper surface of the second insulating layer; a third insulating layer having a region located above the first conductive layer and a region located above the second conductive layer; a first oxide semiconductor layer and a second oxide semiconductor layer having a region in contact with an upper surface of the third insulating layer; a third conductive layer having a region in contact with an upper surface of the first oxide semiconductor layer; a fourth conductive layer having a region in contact with an upper surface of the second oxide semiconductor layer; a fifth conductive layer having a region in contact with an upper surface of the third insulating layer; a fourth insulating layer having a region located above the third conductive layer, a region located above the fourth conductive layer, and a region located above the fifth conductive layer; a sixth conductive layer having a region in contact with an upper surface of the fourth insulating layer and a region in contact with an upper surface of the first semiconductor layer; the first conductive layer has the same material as the second conductive layer; the third conductive layer has the same material as the fourth conductive layer; the first semiconductor layer comprises crystalline silicon and is electrically connected to the fourth conductive layer; the first conductive layer has a region overlapping with the first semiconductor layer with the second insulating layer interposed therebetween and functions as a gate electrode of the first transistor; the first oxide semiconductor layer has a region overlapping with the second conductive layer with the second insulating layer interposed therebetween; the second conductive layer functions as a gate electrode of the second transistor, the fifth conductive layer has a function as a first wiring, the sixth conductive layer has a function as a second wiring, the first oxide semiconductor layer has a channel formation region of the second transistor; The display device, wherein the second oxide semiconductor layer does not have a channel formation region of a transistor.

4. In claim 2 or 3, The display device, wherein the fourth insulating layer comprises silicon oxide.

5. In any one of claims 1 to 4, The display device, wherein the third insulating layer comprises silicon oxide.

Images