Wafer residual gas removal device with jet nozzle structure

Abstract

To provide a wafer residual gas removal device with an injection nozzle structure.SOLUTION: The present invention relates to a wafer residual gas removal device with an injection nozzle structure. The wafer residual gas removal device with the injection nozzle structure includes: at least one injection nozzle (15_1 to 15_N, 16_1 to 16_N), each of which is formed at the front side of a loading space 12 formed inside a housing 11 and linearly extends in the horizontal direction; and a plurality of injection holes (21_1 to 21_L) formed along the extending direction of each injection nozzle (15_1 to 15_N). Gas or CDA injected from the plurality of injection holes (21_1 to 21_L) removes residual gas or contaminants from the surface of the wafer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a wafer residual gas removal device having a spray nozzle structure, and more particularly to a wafer residual gas removal device having a spray nozzle structure that removes residual gas or contaminants attached to the surface of a wafer by gas sprayed from a linear spray nozzle. [Background technology]

[0002] Various gases are used in the semiconductor industry, and residual gases remaining on wafers after processing are released into the atmosphere. These released gases can create additional by-products, adversely affecting the process. Furthermore, some of the gases used in processing are toxic, and their release can pose a health risk to workers. Wafers are supplied to equipment through a front-opening unified pod (FOUP). After processing, wafers are stored in side storage and then transferred to the FOUP to remove residual gases from the wafers. Furthermore, if processed wafers are stored immediately in the FOUP, residual gases can affect the wafers before processing. Therefore, wafers are stored in side storage to separate them before and after processing. Such side storage can include a means for spraying nitrogen or clean dry air (CDA) to remove residual gases and a means for storing wafers.

[0003] In relation to the removal of residual gases or foreign particles from wafer surfaces, Patent Document 1 discloses a wafer residual gas removal device. Patent Document 2 discloses an exhaust device that temporarily stores wafers and exhausts contaminants while the etching process is suspended during semiconductor manufacturing processes. Patent Document 3 discloses a fume removal device. These prior art technologies have the disadvantage of being difficult to effectively remove residual gases or contaminants from wafers. Therefore, there is a need for a removal device that can remove residual gases or contaminants and solves the problems of these prior art technologies.

[0004] The present invention is intended to solve the problems of the prior art and has the following objects. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Republic of Korea Patent Registration No. 10-0989887 (GS Co., Ltd., published on October 26, 2010) Wafer residual gas removal device [Patent Document 2] Republic of Korea Patent Registration No. 10-1874809 (Kim Won-gi, Published 2018.07.05.) Pollutant Discharge Device [Patent Document 3] Korean Patent Publication No. 10-2015-0087152 (Woo Beom-jae, published on July 29, 2015) Fume removal device Summary of the Invention [Problem to be solved by the invention]

[0006] The object of the present invention is to provide a wafer residual gas removal device having a spray nozzle structure that effectively removes gases or contaminants remaining on the wafer surface by spraying nitrogen or CDA from a plurality of spray holes formed in at least one spray nozzle formed at the entrance. [Means for solving the problem]

[0007] According to a suitable embodiment of the present invention, a wafer residual gas removal device having a spray nozzle structure includes at least one spray nozzle formed at the front side of a loading space formed inside a housing, each spray nozzle extending linearly in a horizontal direction; and a plurality of spray holes formed along the extension direction of each spray nozzle; and gas or CDA sprayed from the plurality of spray holes removes gas or contaminants remaining on the surface of the wafer.

[0008] According to another suitable embodiment of the invention, the at least one injection nozzle comprises a number of nozzles arranged vertically.

[0009] According to yet another suitable embodiment of the present invention, the at least one injection nozzle comprises a first group of injection nozzles and a second group of injection nozzles arranged opposite each other.

[0010] According to yet another preferred embodiment of the present invention, the plurality of injection holes are formed to be positioned in a spiral along the extension direction of the injection nozzle.

[0011] According to yet another suitable embodiment of the invention, at least one injection nozzle is rotatable along a circumferential direction.

[0012] According to yet another suitable embodiment of the invention, each of the at least one injection nozzle is inclined outwardly while extending inwardly from a side surface of the housing.

[0013] According to yet another preferred embodiment of the present invention, the wafer stacking device further includes a plurality of loading members disposed in the loading space for loading wafers, each of which has a spherical, conical, or hemispherical contact tip formed at an end thereof to come into contact with the wafer.

[0014] According to yet another preferred embodiment of the present invention, the device further includes a discharge module formed on a rear surface of the housing, the discharge module including a discharge plate having a plurality of through-holes uniformly formed therein. [Effects of the Invention]

[0015] The wafer residual gas removal device with a spray nozzle structure according to the present invention effectively removes gases or contaminants remaining on the wafer surface by controlling the flow of nitrogen or CDA sprayed from multiple spray holes formed in a linear spray nozzle. During various processes in semiconductor manufacturing, wafers must be loaded into a storage space. If the contact area between the wafer and the loading means increases when the wafer is loaded, the wafers may be contaminated by contaminants or particles. The removal device according to the present invention has a structure that minimizes the contact area between the loading means and the wafer, thereby preventing wafer contamination by the loading means. The removal device according to the present invention can be applied to a wafer storage space where wafers are stored for various purposes, and the present invention is not limited thereto. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a view showing an embodiment of a wafer residual gas removal apparatus having a spray nozzle structure according to the present invention; [Figure 2] 1 is a view showing an embodiment of a spray nozzle for a gas removal device according to the present invention; [Figure 3] 1 is a diagram showing an embodiment of a gas flow structure for removing gas or pollutants in a gas removal apparatus according to the present invention. [Figure 4] 1 is a view showing an embodiment of a gas injection form by an injection nozzle in a removal device according to the present invention; [Figure 5] 1 is a view showing an embodiment of a structure in which wafers are loaded inside a removal apparatus according to the present invention; [Figure 6] 1 is a diagram illustrating an embodiment of a discharge plate for a removal device according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the accompanying drawings, but the embodiments are for a clear understanding of the present invention and the present invention is not limited thereto. In the following description, components having the same reference numerals in different drawings have similar functions, and therefore, unless necessary for understanding the invention, repeated description will not be provided. Known components will be briefly described or omitted, but will not be understood as being excluded from the embodiments of the present invention.

[0018] FIG. 1 illustrates an embodiment of a wafer residual gas removal device having a jet nozzle structure according to the present invention.

[0019] 1, the wafer residual gas removal device with a spray nozzle structure includes at least one spray nozzle (15_1 through 15_N, 16_1 through 16_N) that extends linearly and is formed in front of a loading space 12 formed inside a housing 11; and a plurality of spray holes (21_1 through 21_L) that extend along the extension direction of each spray nozzle (15_1 through 15_N). Gas or CDA sprayed from the plurality of spray holes (21_1 through 21_N) removes gas or contaminants remaining on the wafer surface. The spray nozzles (15_1 through 15_N, 16_1 through 16_N) extend in various directions, preferably linearly along the horizontal direction.

[0020] Wafers are loaded into a loading space 12 formed inside the housing 11, and are moved into the loading space 12 through an entrance and stacked in a layered structure. A loading means for stacking and storing wafers in multiple layers is disposed in the loading space 12. The housing 11 may have various structures for loading and storing wafers therein, and the present invention is not limited thereto. An entrance for introducing wafers is formed at the front of the housing 11, and at least one spray nozzle (15_1 to 15_N, 16_1 to 16_N) is disposed at the entrance or at the front of the loading space 12. Each spray nozzle (15_1 to 15_N, 16_1 to 16_N) is shaped like a rod with a linearly extending circular cross section, and gas can flow along the interior of each spray nozzle (15_1 to 15_N, 16_1 to 16_N). Vertically extending fixed blocks 13a and 13b are formed on both sides of the housing 11, and a pair of vertically extending guide blocks 14a and 14b may be coupled to each of the fixed blocks 13a and 13b. Each of the spray nozzles (15_1 to 15_N and 16_1 to 16_N) is coupled to the guide blocks 14a and 14b with one end inserted therein, so that each of the spray nozzles (15_1 to 15_N and 16_1 to 16_N) may have a structure in which one end is fixed and the nozzle extends horizontally. At least one of the spray nozzles (15_1 to 15_N and 16_1 to 16_N) may consist of multiple nozzles arranged along the vertically extending guide blocks 14a and 14b. Also, the at least one injection nozzle (15_1 to 15_N, 16_1 to 16_N) may be composed of a first group of injection nozzles (15_1 to 15_N) having one end connected to the first guide block 14a and a second group of injection nozzles (16_1 to 16_N) having one end connected to the second guide block 14b. The injection nozzles (15_1 to 15_N, 16_1 to 16_N) of each group are arranged vertically, and each injection nozzle (16_1 to 16_N) extends from the side of the housing 11 toward the middle or inner portion of the front. The at least one injection nozzle (15_1 to 15_N, 16_1 to 16_N) may be arranged in various ways, and the present invention is not limited thereto.

[0021] A plurality of injection holes may be formed in each of the injection nozzles (15_1 to 15_N, 16_1 to 16_N). Each of the injection nozzles (15_1 to 15_N, 16_1 to 16_N) may extend linearly, and a plurality of injection holes may be formed along the extension direction of each of the injection nozzles (15_1 to 15_N, 16_1 to 16_N). Gas injected into the guide blocks 14a and 14b may flow to each of the injection nozzles (15_1 to 15_N, 16_1 to 16_N). Thereafter, the gas may be injected to the outside through the injection holes formed in the injection nozzles (15_1 to 15_N, 16_1 to 16_N) to remove gas or contaminants remaining on the wafer surface. The injection holes may be formed in various structures capable of injecting gas, and the present invention is not limited thereto.

[0022] According to one embodiment of the present invention, at least one spray nozzle (15_1 to 15_N, 16_1 to 16_N) is rotatable in a circumferential direction. As shown on the right side of FIG. 1 , a cylindrical or drum-shaped rotation guide unit (18_1 to 18_N) that functions similarly to a pinion gear may be coupled to the end of each spray nozzle (15_1 to 15_N, 16_1 to 16_N). Meshing teeth may be formed on the circumferential surface of the rotation guide unit (18_1 to 18_N) to mesh with the linear bracket 17 and rotate. The linear bracket 17 may include a pair of vertical extension portions extending vertically and a connecting portion connecting the upper ends of the pair of vertical extension portions. The pair of vertical extension portions may have a shape similar to a rack gear and may have linear teeth formed thereon to mesh with the meshing teeth of the rotation guide unit (18_1 to 18_N). A movable tap 171 is formed in the middle of the connecting portion and can move up and down along a tap guide 172. The movable tap 171 moves up and down by, for example, air pressure, a motor, or similar driving means. When the movable tap 171 moves up and down, the pair of vertical extensions moves up and down. As a result, the rotation guide units 18_1 to 18_N engaged with the pair of vertical extensions rotate, causing each of the spray nozzles 15_1 to 15_N and 16_1 to 16_N to rotate. The spray nozzles 15_1 to 15_N and 16_1 to 16_N can rotate in various ways. For example, the first group of spray nozzles 15_1 to 15_N and the second group of spray nozzles 16_1 to 16_N can rotate independently in a circular direction. Alternatively, each of the spray nozzles 15_1 to 15_N and 16_1 to 16_N can rotate independently in a circular direction. The linear bracket 17 and the injection nozzles (15_1 to 15_N, 16_1 to 16_N) rotate while meshing with each other through gears, and the angle of the injection hole is adjusted by raising and lowering the linear bracket 17. The angle of the injection hole is adjusted, for example, according to the outer diameter of the wafer or the state of the wafer depending on the type of process.As the linear bracket 17 moves up and down, the direction of the spray holes formed in the spray nozzles (15_1 to 15_N, 16_1 to 16_N) changes, and the direction of the airflow changes continuously. As a result, gas such as nitrogen or CDA is sprayed uniformly onto the surface of the entire wafer, effectively removing contaminants such as residual gas or fumes. The spray angle of the spray holes can be adjusted in various ways, and the present invention is not limited thereto.

[0023] FIG. 2 illustrates an embodiment of an injection nozzle for a gas removal device according to the invention.

[0024] 2, the multiple injection nozzles 15_1 and 15_2 have the same or similar shapes and are arranged at regular intervals in the vertical direction. Each injection nozzle 15_1 and 15_2 extends a certain distance (X) from the side of the end effector inside the loading space 12 formed in the housing 11 by the guide block 14a. In addition, the lower portion of each injection nozzle 15_1 and 15_2 may be positioned at a certain height (Y) above the top of the wafer W moving into the loading space 12 for loading. The certain distance (X) and the certain height (Y) may be determined in various ways, and the vertical distance between adjacent injection nozzles 15_1 and 15_2 in the vertical direction is determined by the set certain height (Y). 2, each of the injection nozzles 15_1 and 15_2 has a linear rod shape, and a number of injection holes 21_1 to 21_L may be formed along the extension direction of each of the injection nozzles 15_1 and 15_2. Also, a cylinder- or drum-shaped rotation guide unit 18_1 may be connected to one end of each of the injection nozzles 15_1 and 15_2.

[0025] According to one embodiment of the present invention, the multiple injection holes 21_1 to 21_N may be spirally formed along the extension direction of the injection nozzles 15_1 to 15_2. Specifically, the position of the injection hole 21_K located at the center of the injection nozzles 15_1 and 15_2 is determined, and based on this, the positions of the first injection hole 21_1 and the end injection holes 21_N on both sides of the injection nozzles 15_1 and 15_2 are determined. For example, the first injection hole 21_1 may be located at a 45° angle clockwise from the middle injection hole 21_K. The last injection hole 21_N may be located at a 45° angle counterclockwise. The positions of the injection holes 21_1 to 21_N around the injection nozzles 15_1 and 15_2 are determined based on the wafer W. Specifically, the injection hole 21_K located at the center of the wafer W may extend perpendicular to the surface of the wafer W and form an angle of, for example, 70 to 80 degrees with a line passing through the center of the injection nozzle. The injection hole (e.g., 21_N or 21_1) located farthest from the wafer W may be formed at a position forming an angle of 20 degrees with the perpendicular extension line. The remaining injection holes 21_1 to 21_N may be formed at positions forming angles within the range. In this manner, nitrogen injected from the multiple injection holes 21_1 to 21_N spirally formed around the periphery of the injection nozzles 15_1 and 15_2 is injected onto the surface of the wafer W without being lost to the outside of the wafer W. The injection holes 21_1 to 21_N may be formed in various structures that guide the injected gas to the wafer surface, and the present invention is not limited thereby.

[0026] FIG. 3 illustrates an embodiment of a gas flow structure for gas or contaminant removal in a gas removal apparatus according to the present invention.

[0027] Referring to FIG. 3, each of at least one injection nozzle (15_1 to 15_N, 16_1 to 16_N) may extend inward from a side of the housing 11 and tilt outward. A wafer (W) is moved into a loading space 12 formed in the housing 11 by an end effector (E), and the wafer (W) may move into the loading space 12 through an entrance of the housing 11. As shown on the left side of FIG. 3, the wafer (W) may pass through a nozzle fixing block formed at the entrance of the housing 11 while one end of the injection nozzle (15_1, 16_1) is fixed. The injection nozzle (15_1, 16_1) may tilt outward while extending from the fixed end. An exhaust port 32 is formed on the rear side of the housing 11, and gas is not injected from the injection nozzle (15_1, 16_1) when the wafer (W) has entered, for example, one-third of the way. Thereafter, as the wafers W move into the loading space 12, gas for removing residual gas or contaminants is sprayed from the spray nozzles 15_1 and 16_1 when half of the wafers W have entered. The gas sprayed from the spray nozzles 15_1 and 16_1 is sprayed onto the surface of the entered portion of the wafers W. As shown on the right side of FIG. 3, when the wafers W are completely inserted into the loading space 12 and loaded, gas is sprayed from the spray nozzles 15_1 and 16_1 onto the entire surface of the wafers W. In this manner, when the wafers W are completely inserted into the loading space 12 and loaded, gas is sprayed uniformly from the spray nozzles 15_1 and 16_1 onto the entire surface of the wafers W. The spraying of gas from the spray nozzles 15_1 and 16_1 can be adjusted in various ways, and the present invention is not limited thereto.

[0028] FIG. 4 illustrates an embodiment of the gas injection form by the injection nozzle in the removal device according to the present invention.

[0029] Referring to FIG. 4, a plurality of injection holes 21_1 to 21_K are formed in the injection nozzle 15_1, and the injection holes 21_1 to 21_K are arranged in a spiral along the extension direction of the injection nozzle 15_1. The positions of the injection holes 21_1 to 21_K along the longitudinal direction of the injection nozzle 15_1 are determined based on the wafers W. Specifically, an injection hole (e.g., 21_K) formed at a position corresponding to a portion adjacent to the center of the wafers W may form the smallest angle with respect to the wafers W in a stacked state. On the other hand, an injection hole (e.g., 21_1) formed at a position corresponding to a portion away from the center of the wafers W may form a large angle with respect to the wafers W. Specifically, the injection holes 21_1 to 21_K may be formed so that gas reaches the edges of the wafers W in a stacked state. As described above, the spray nozzles 15_1 through 16_1 may be inclined outward along their extension direction, with the inclination level being such that the spray holes (e.g., 21_K) formed at the ends of the spray nozzles 15_1 and 16_1 are directed toward the center of the loaded wafers W. The inclined extension structure of the spray nozzles 15_1 and 16_1 and the spiral-shaped spray holes 21_1 through 21_K allow gas sprayed from the spray holes 21_1 through 21_K to flow uniformly over the entire surface of the wafers W, thereby removing contaminants such as residual gas or fumes from the wafer surfaces. Referring to the right side of FIG. 4, the spray nozzles 15_1 and 16_1 are located on both sides, either in front of the entrance of the housing 11 or in front of the loading space 12. The gas injected from the injection holes 21_1 to 21_K can form a number of circular flow paths with gradually decreasing diameters from the center to both sides on the surface of the loaded wafers W. This allows the injected gas to be injected uniformly over the entire surface of the wafers W without being lost. There are various methods for adjusting the injection of gas onto the wafer surface, and the present invention is not limited thereto.

[0030] FIG. 5 illustrates an embodiment of a structure in which wafers are loaded inside a removal apparatus according to the present invention.

[0031] Referring to FIG. 5, the loading space 12 further includes a number of loading members (51_1 to 51_K) for loading wafers (W), and each of the loading members (51_1 to 51_K) has a spherical, conical, or hemispherical contact tip (52_1 to 52_K) formed at its end to come into contact with the wafer (W).

[0032] To load a number of wafers W, a number of loading members 51_1 to 51_K are arranged in the loading space 12. The loading members 51_1 to 51_K support the undersides of the wafers W. The loading members 51_1 to 51_K support at least a portion of the wafers W. Contaminants may be present on the loading members 51_1 to 51_K, and the portion of the wafer that comes into contact with the loading members 51_1 to 51_K may not be cleaned of residual gases or contaminants by gases such as nitrogen or CDA. Therefore, it is advantageous to reduce the area of ​​the wafers W that come into contact with the loading members 51_1 to 51_K. The loading members 51_1 to 51_K are fixed at one end to a member fixing block 53 and are arranged at regular intervals along the vertical direction. In addition, spherical, conical, or hemispherical contact tips 52_1 to 52_K may be formed at the end of each load member 51_1 to 51_K. This allows the wafer W to come into point contact with the end of the load member 51_1 to 51_K, minimizing the contact area. The contact tips 52_1 to 52_K may have various shapes that minimize the contact area with the wafer W while separating the rest of the load members 51_1 to 51_K except for the end, and the present invention is not limited thereto.

[0033] FIG. 6 illustrates an embodiment of a discharge plate for a removal device according to the invention.

[0034] Referring to FIG. 6, the device further includes an exhaust module 61 formed on the rear surface of the housing 11. The exhaust module 61 includes an exhaust plate 62 with a number of through-holes 63_1 to 63_N uniformly formed therein. The gas sprayed from the spray nozzles disposed in the housing 11 contains residual gas or contaminants separated from the wafer and must be discharged to the outside of the housing 11 for treatment. The exhaust module 61 is formed on the upper rear portion of the housing 11, and the gas is discharged to the outside through the exhaust module 61. An exhaust conduit is connected to an exhaust port formed in the exhaust module 61, and the gas is discharged from the inside of the housing 11 to the outside. The exhaust plate 62 is formed inside the exhaust module 61 and has an overall rectangular structure. The exhaust plate 62 has a number of through-holes 63_1 to 63_N uniformly formed in a two-dimensional matrix pattern. The exhaust gas flows through the number of through-holes 63_1 to 63_N and is discharged to the outside through the exhaust port. The exhaust gas is efficiently discharged through the exhaust port while the pressure is adjusted through the plurality of through holes 63_1 to 63_N. The exhaust plate 62 may have various structures, and the present invention is not limited thereto.

[0035] Although the present invention has been described in detail above with reference to the illustrated embodiments, those skilled in the art may make various modifications and alterations without departing from the technical spirit of the present invention by referring to the illustrated embodiments. The present invention is not limited by such modifications and alterations, but is limited only by the scope of the claims. [Explanation of symbols]

[0036] 11: Housing 12: Loading space 15_1 to 15_N: Injection nozzle 16_1 to 16_N: Injection nozzle 21_1 to 21_N: Injection holes 51_1 to 51_K: Loading components 52_1 to 52_K: Contact tip 61: Emission module 62: Discharge plate 63_1 to 63_N: Through holes

Claims

1. at least one spray nozzle (15_1 to 15_N, 16_1 to 16_N) formed inside the housing 11 and located at an end of a loading space 12 in which a plurality of wafers are loaded in a vertically layered structure, and formed at an inlet side of the housing for loading the wafers into the loading space 12, each spray nozzle extending linearly along a horizontal direction; a plurality of injection holes 21_1 to 21_L formed along the extension direction of each of the injection nozzles 15_1 to 15_N; The gas or CDA injected from the plurality of injection holes 21_1 to 21_N removes gas or contaminants remaining on the surface of the wafer. Each of the at least one injection nozzle (15_1 to 15_N, 16_1 to 16_N) extends inward from the side surface of the housing 11 and is inclined outward. A wafer residual gas removal device having a jet nozzle structure.

2. At least one injection nozzle (15_1 to 15_N, 16_1 to 16_N) is a plurality of nozzles arranged vertically.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

3. At least one of the injection nozzles (15_1 to 15_N, 16_1 to 16_N) is composed of a first group of injection nozzles (15_1 to 15_N) and a second group of injection nozzles (16_1 to 16_N) arranged to face each other.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

4. The plurality of injection holes 21_1 to 21_N are formed in a spiral shape along the extension direction of the injection nozzles 15_1 to 15_1, 16_1 to 16_N.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

5. At least one of the injection nozzles (15_1 to 15_N, 16_1 to 16_N) is rotatable along the circumferential direction.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

6. The wafer mounting device further includes a plurality of mounting members 51_1 to 51_K arranged in the mounting space 12 to mount wafers W, and each mounting member 51_1 to 51_K has a spherical, conical or semi-spherical contact tip 52_1 to 52_K formed at its end to come into contact with the wafer W.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

7. The housing 11 further includes a discharge module 61 formed on the rear surface thereof. The discharge module 61 includes a discharge plate 62 having a plurality of through-holes 63_1 to 63_N uniformly formed therein.

2. A wafer residual gas removal device having the injection nozzle structure according to claim 1.

Images