Planarization apparatus and method for manufacturing an article

Abstract

To provide a technique advantageous in achieving both maintaining high productivity in a cluster configuration of a planarization apparatus and decreasing complexity of an apparatus configuration.SOLUTION: A planarization apparatus includes a plurality of processing parts each configured to perform planarization processing of a substrate. Each of the processing parts includes a substrate chuck, and is configured to perform planarization processing of a substrate chucked by the substrate chuck. A conveying part is configured to convey a substrate chuck of a processing part selected from among the plurality of processing parts along a conveyance path including a common conveyance path shared by the plurality of processing parts. A supplying part is arranged on a path of movement of the substrate chuck by the conveying part along the common conveyance path, and is configured to supply a composition onto the substrate chucked by the substrate chuck.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a planarizing apparatus and a method for manufacturing an article. [Background technology]

[0002] For mass production of semiconductor devices, a pattern transfer method and apparatus that utilizes jet-and-flash imprint lithography (JFIL) is known. The JFIL imprint method generally proceeds as follows: First, a UV-curable composition is supplied to the target shot area on the wafer using a supply mechanism such as an inkjet nozzle. A mold with a device pattern is then brought into contact with the composition. Once the composition has sufficiently penetrated the mold pattern, it is irradiated with UV light to cure the composition. The mold is then removed from the composition. This process enables the formation of fine patterns with good linewidth variation on the wafer.

[0003] In the EUV photolithography process, the depth of focus (DOF) of the projected image of a fine circuit pattern has become increasingly shallower due to the increasing numerical aperture (NA). For example, the allowable DOF for an EUV lithography tool with an NA of 0.33 is 300–110 nm (depending on the illumination mode). The allowable DOF for an EUV lithography tool with an NA of 0.55 is 160–40 nm (depending on the illumination mode). However, it has proven difficult to achieve sufficient surface planarization within this allowable range using conventional spin coaters. In particular, spin coating creates a uniformly thick layer on the wafer due to the viscosity of the SOC coating agent dispensed onto the wafer and the centrifugal force of the spin. Therefore, if the wiring density of the underlying pattern on the process wafer varies over a long period of 5 μm or more, the boundary where the wiring density changes will be clearly visible on the SOC film surface.

[0004] Patent Document 1 discloses a planarization method that applies some of the imprinting techniques described in the background above. In this method, a superstrate, which is a member on which no pattern is formed, is pressed against a liquid composition supplied onto a wafer, and once the composition has spread, UV exposure is performed to harden the composition, and then the superstrate is removed. Note that the term "imprint" is often used to refer to the concept of transferring a pattern drawn on a mold by imprinting it, but in the planarization process that is the subject of the present invention, no pattern is drawn on the superstrate.

[0005] However, because such planarization apparatuses supply a composition to the entire surface of a substrate and perform imprint processing all at once, throughput can be an issue. Therefore, clustering planarization apparatuses to process multiple substrates in parallel is considered. Patent Document 2 discloses a configuration including multiple planarization processing units and a single supply unit (dispenser system) shared by the multiple planarization processing units. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] U.S. Patent No. 8,394,282 [Patent Document 2] International Publication No. 2020 / 213571 Summary of the Invention [Problem to be solved by the invention]

[0007] Dispenser systems have individual differences in the amount and position of composition discharged from each nozzle, and these individual differences must be managed and suppressed. In addition, dispenser systems themselves are expensive. On the other hand, a dispenser system can supply composition to a single wafer in less than 10 seconds, providing a processing capacity three to four times higher than that of a planarization process. Therefore, to achieve a cluster configuration of a low-cost, highly productive planarization device, a configuration with multiple planarization processing units and a single dispenser system shared by them is desirable from the perspective of system design balance.

[0008] However, when attempting to adapt an existing substrate stage for such a cluster configuration, design constraints exist, such as a limited driving range of the substrate stage. Therefore, it was necessary to configure the dispensing function and the planarization processing function as separate wafer stage modules. In this case, a transfer robot is required to transport the substrate between the dispensing module and the planarization processing module, which adds requirements such as the transfer accuracy, transfer time, and control of the volatilization of the UV-curable composition during transfer. This resulted in significant system design constraints and the disadvantage of the device becoming larger and more complex.

[0009] Furthermore, for the transfer robot to receive a wafer from the wafer stage, it must first remove the wafer from the wafer chuck and then lift it up using wafer lift pins located on the outer periphery of the wafer chuck. Meanwhile, when the transfer robot delivers a wafer to the wafer stage, the reverse procedure is required. This means that it takes time each time the transfer robot delivers / receives a wafer, posing a problem of not improving the productivity of the equipment.

[0010] The present invention provides a technique that is advantageous in maintaining high productivity in a cluster configuration of planarization apparatuses while reducing the complexity of the apparatus configuration. [Means for solving the problem]

[0011] According to one aspect of the present invention, each of the substrates includes a substrate chuck. support a plurality of processing sections that perform planarization processing of the substrate that has been subjected to the planarization processing; a transport section that transports a substrate chuck of a processing section selected from the plurality of processing sections along a transport path including a shared transport path shared by the plurality of processing sections; and a transport section that is disposed on a path along which the substrate chuck is moved by the transport section along the shared transport path, and support and a supply unit that supplies a composition used in the planarization treatment onto a substrate being processed. [Effects of the Invention]

[0012] According to the present invention, it is possible to provide a technique that is advantageous in maintaining high productivity in a cluster configuration of planarization apparatuses and reducing the complexity of the apparatus configuration. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 2 is a diagram showing the configuration of a planarization apparatus. [Figure 2a] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2b] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2c] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2d] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2e] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2f] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2g] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2h] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2i] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2j] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2k] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2l] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2m] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2n] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2o] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 2p] 5A and 5B are diagrams for explaining transport control of a substrate chuck. [Figure 3] FIG. 4 is a diagram showing the configuration of a clutch coupling portion. [Figure 4] FIG. 1 is a diagram showing the configuration of a flattening head system. [Figure 5] A diagram showing the configuration of the illumination and spread observation system. [Figure 6] 10 is a timing chart showing parallel processing of the flattening process. [Figure 7] 10A to 10C are diagrams illustrating a flattening process. [Figure 8] 10 is a graph showing the relationship between the number of planarizing head systems and productivity. [Figure 9] FIG. 2 is a diagram showing the configuration of a planarization apparatus. [Figure 10] FIG. 1 illustrates a configuration of a planarization apparatus having a cover plate. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0015] In this specification and drawings, directions are indicated in an XYZ coordinate system with the horizontal plane as the XY plane. Generally, a substrate to be processed is placed on a substrate stage so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, the directions that are perpendicular to each other in a plane along the surface of the substrate are referred to as the X-axis and Y-axis, and the direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. Furthermore, in the following, the directions that are parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the directions of rotation around the X-axis, Y-axis, and Z-axis are referred to as the θx-direction, θy-direction, and θz-direction, respectively.

[0016] First Embodiment The underlying pattern on a substrate has a roughness profile resulting from the pattern formed in the previous process. In the case of a typical logic-system process wafer, the pattern-induced roughness is approximately 80–100 nm. The step caused by the gentle waviness of the entire substrate can be corrected using the focus tracking function of the scanning exposure equipment used in the photolithography process. However, fine-pitch unevenness that falls within the exposure slit area of ​​the exposure equipment cannot be corrected using the focus tracking function. If the amount of unevenness is large, it may fall outside the depth of focus (DOF) of the exposure equipment. Conventional methods for smoothing the underlying pattern on a substrate involve forming a planarizing layer, such as spin-on carbon (SOC) or chemical mechanical polishing (CMP). However, these conventional techniques have the problem of not being able to achieve sufficient planarization performance, and the unevenness of the underlying substrate is likely to increase further with the increasing number of layers in the future.

[0017] To solve this problem, a planarization apparatus that applies JFIL technology to planarize a substrate is being considered. An overview of the planarization process using JFIL technology will be described with reference to FIG. 7. In the planarization process using JFIL technology, a substrate can be planarized through the steps of supplying a UV-curable composition (FIG. 7(a)), contacting a superstrate (FIG. 7(b)), curing (FIG. 7(c)), and releasing the superstrate (FIG. 7(d)). In FIG. 7, a circuit pattern has already been formed on the surface of the substrate W chucked by the substrate chuck 1, and pattern-induced irregularities of, for example, about 80 to 100 nm may exist. The requirement of the planarization apparatus in this embodiment is to planarize the surface irregularities caused by this pattern.

[0018] In the supplying step shown in Fig. 7a, a composition ML is supplied as a planarizing material from a dispenser DP onto the surface of a substrate W chucked by a substrate chuck 1. The dispenser DP is placed on a bridge (not shown) suspended on a surface plate that also serves as a guide in the Z direction for a substrate stage holding the substrate chuck 1. The substrate chucked by the substrate chuck 1 under the dispenser DP is W The composition ML is supplied to the entire surface of the substrate by scanning the dispenser DP once or multiple times. The dispenser DP can be a jetting module that supplies the composition ML in the form of droplets. The dispenser DP can distribute the amount of composition ML supplied depending on the arrangement of the concave and convex patterns formed on the surface of the substrate W. Specifically, the composition ML can be supplied so that the density of droplets is high in areas with a high ratio of concaves in the pattern on the substrate surface and low in areas with a low ratio. For this reason, when the composition ML is supplied by the dispenser DP, the substrate W is W Substrate alignment measurements can be performed to align the position of the pattern formed on the substrate with the shaded pattern of the composition ML to be dispensed.

[0019] 7(b), a superstrate SS (also called a "flat template"), which is a member having an outer diameter equal to or greater than that of the substrate W and a flat surface on which no pattern is formed, comes into contact with the composition ML, and the superstrate SS is pressed over the entire surface of the substrate W. This causes the composition ML to spread in a layer (hereinafter referred to as "filling" or "spreading").

[0020] 7(c), while the superstrate SS is in contact with the composition ML on the substrate W, ultraviolet light from the light source IL is irradiated all over the surface of the substrate W (or as repeated partial exposures), thereby curing the composition ML that has spread in a layer.

[0021] In the demolding process shown in Figure 7(d), the superstrate SS is separated from the cured composition ML on the substrate W. In this way, the surface irregularities caused by the pattern on the substrate W are flattened. Note that the objective here is not to correct the flatness of low spatial frequency components, such as when the profile of the entire substrate is distorted relative to an absolute flat surface. Such components are compensated for as non-flat components by focus tracking control of the exposure tool in the subsequent pattern formation process.

[0022] In this way, planarization processing using imprint technology is a technique that applies a composition to the surface of a substrate according to its unevenness, brings a flat, thin member called a superstrate into contact with the composition, and hardens the composition, thereby achieving planarization on the nanometer order.

[0023] FIG. 4 shows the configuration of a planarization head system that performs the planarization process described above. In FIG. 4, the superstrate 3 corresponds to the superstrate SS in FIG. 7. It is a member without a fine pattern and can serve as a flat reference surface after the planarization process. In this embodiment, when the substrate chuck S placed on the substrate stage T is coupled to the clutch 9, its position is controlled by a linear motor 506 to which the clutch is attached. The specific functions and configurations of the clutch and the linear motor will be described later. The substrate chuck S is provided with sensors 501, for example, two channels, that measure the Z direction upward, arranged in the depth direction of the drawing. These sensors 501 can measure the Z direction position and leveling (θx, θy) of the superstrate 3. Furthermore, by using these sensors 501 to observe the edge of the superstrate 3 while scanning the substrate stage T in the Y direction, the amount of positional deviation of the superstrate 3 in the X and Y directions relative to the superstrate chuck 502 can also be measured.

[0024] A cavity 503 is formed above the superstrate 3, separated by a transparent member from the exposure light source (corresponding to light source IL in Figure 7) included in the illumination / spread observation system 410. When the superstrate 3 is brought into contact with the composition on the substrate 2, the cavity 503 is pressurized with respect to atmospheric pressure. This allows the superstrate 3 to have a convex shape relative to the substrate 2, allowing contact from the center of the substrate first, reducing air trapped between the superstrate 3 and the composition. A linear motor mover 504a is fixed to the superstrate chuck 502. The mover 504a can move relative to the linear motor stator 504b via a spring hinge 505. The linear motor configured in this manner is position-controlled using a position sensor (not shown). Three sets of the mover 504a, stator 504b, spring hinge 505, and position sensor are implemented in one planarization head system. With this configuration, the super straight chuck 502 is positioned along the three axes of Z, θx, and θy by a predetermined drive profile during the contact step and the demolding step.

[0025] An illumination and spread observation system 410 is disposed above the superstrate 3. The illumination and spread observation system 410 may include an exposure light source and an optical system for observing the spread state of the composition.

[0026] FIG. 5 shows an example of the configuration of an illumination and spread observation system 410. In the contact step, a superstrate 3 is pressed against a composition (composition ML in FIG. 7) supplied onto a substrate 2. A light source 406 constituting a curing unit generates ultraviolet light, for example, in a wavelength band of 310 to 365 nm, as exposure light for curing the composition when the superstrate 3 and the composition on the substrate 2 are in contact with each other. The exposure light from the light source 406 is irradiated when the spreading (filling) of the composition is complete. The light emitted from the light source 406 is bent toward the substrate 2 by a UV dichroic mirror 402 and expanded by an objective lens 401 to an irradiation area sufficient to cover the diameter of the substrate. In one example, the UV dichroic mirror 402 is transparent to wavelengths longer than the exposure light, for example, 400 nm or longer, and the long wavelength band is used to observe the spreading state of droplets of the composition on the substrate 2.

[0027] Light source 407 is an illumination source for spread observation. The light from light source 407 is selected from various wavelengths, such as 630 nm red light, 520 nm green light, and 470 nm blue light, depending on the observation conditions. The light from light source 407 passes through folding mirrors 404 and 403 and dichroic mirror 402 to illuminate the composition on substrate 2. Camera 408 captures a spread image of the composition on substrate 2 illuminated by light source 407 via imaging lens 405. The spread image allows observation of the point and shape of contact between superstrate 3 and the composition on substrate 2. The spread image can be used to optimize the positioning target coordinates of the planarization head system in the θx and θy directions, as well as the Z direction. The spread image can also be used to detect particles or gaps between superstrate 3 and substrate 2 during normal production processes. Therefore, camera 408 can also be used as a protection mechanism to detect local defects during the planarization process.

[0028] 1 is a diagram showing the configuration of a planarization apparatus 100 according to this embodiment. The substrate transfer module 101 is also called an Equipment Front End Module (EFEM), and may be configured as part of the planarization apparatus 100, or may be connected to the planarization apparatus 100 as a separate device. The substrate transfer module 101 may include a Front Opening Unified Pod (FOUP) that stores multiple substrates (process wafers) and transfers substrates in and out. The substrate transfer module 101 may also function as a FOUP interface for replacing a superstrate attached to a planarization head system.

[0029] The pre- and post-processing module 102 may include a PA processing module 103 that adjusts the pre-alignment (PA) state of the substrate 2. In the pre- and post-processing module 102, for example, the substrate 2 is aligned in the θz direction using a notch or an orientation flat formed on the substrate 2 as a guide. The pre- and post-processing module 102 may also have other functions, such as relay processing during transport of the superstrate 3 and post-baking processing of the substrate 2 that has undergone planarization processing.

[0030] The transfer robot 110 can transfer substrates and superstrates to and from the substrate transfer module 101. The transfer robot 110 can also transfer substrates and superstrates within the pre-post processing module 102, and transfer substrates, superstrates, and substrate chucks within the planarization processing module 104.

[0031] The planarization processing module 104 may include multiple planarization head systems (multiple processing units) P1, P2, and P3, each performing a planarization process on a substrate. The planarization processing module 104 is a cluster of multiple processing units that can perform planarization processes on multiple substrates in parallel. In this embodiment, substrate chucks S1, S2, and S3 are assigned to the planarization head systems P1, P2, and P3, respectively. In the planarization processing module 104, the substrate chucks S1, S2, and S3 are configured to be movable between their corresponding planarization head systems and the shared space 111.

[0032] In this embodiment, the substrate chucks S1, S2, and S3 can hold and transport superstrates in addition to holding substrates. For example, a substrate can be held by suction on the substrate chucks S1, S2, and S3. Meanwhile, the superstrate is placed on lift pins (not shown) protruding from the chuck surface of the transport robot 110 with the surface that contacts the substrate facing downward, so that only its edge is held by the lift pins. Then, for the planarizing head systems P1, P2, and P3, the substrate chucks slowly move below the planarizing head systems and transfer the superstrate, whose edge is held by the pins, to the superstrate chuck 502 of the planarizing heads that have descended.

[0033] For the sake of convenience, it is assumed below that the superstrates have already been transported into the planarization module 104 and attached to the superstrate chucks 502 of the planarization head systems P1, P2, and P3 before the substrate planarization process begins. The substrate chucks S1, S2, and S3 do not directly have drive control mechanisms in the X and Y directions, but only have drive axes (not shown) in the θz direction.

[0034] In this embodiment, the substrate chuck of a planarizing head system selected from the planarizing head systems P1, P2, and P3 can be transported at each step of the planarizing process. Specifically, the planarizing apparatus 100 includes a transport unit that transports the substrate chuck of the selected processing unit along a transport path, including a shared transport path in the shared space 111, shared by the planarizing head systems P1, P2, and P3. Such a transport unit can include an X-slide actuator provided in the shared space 111. In this embodiment, the X-slide actuator is configured by a linear motor including a movable part 106a including an X-clutch (first clutch) and a fixed part 106b. The X-clutch can be configured by, for example, a magnet or a vacuum suction mechanism.

[0035] 1, the planarizing head systems P1, P2, and P3 are arranged in a row so as to contact the shared space 111, and a shared transport path is provided so as to extend in the X direction along the row. The shared transport path is formed by, for example, a fixed portion 106b (first guide rail). The movable portion 106a is connected to a substrate chuck and moves by a linear motor drive mechanism (not shown) while being guided by the fixed portion 106b.

[0036] The substrate chucks S1, S2, and S3 are driven and positioned in the X direction when they are connected to the fixed part 106b via the movable part 106a. A Y-slide actuator for transporting the substrate chuck is provided below each of the planarizing head systems P1, P2, and P3. The Y-slide actuator may be configured by a linear motor including a guide rail 108b (second guide rail) and a Y-slider 108a. The substrate chucks S1, S2, and S3 are driven and positioned in the Y direction when they are connected to the Y-slide actuator. The guide rail 108b forms individual transport paths branching from the shared transport path (fixed part 106b) to each planarizing head system. The Y-slider 108a moves while being guided by the guide rail 108b extending in the Y direction.

[0037] The Y-clutch 109 (second clutch, corresponding to clutch 9 in FIG. 4) is a clutch that transmits the thrust of the substrate chucks S1, S2, and S3 in the Y direction when connected to the substrate chucks. The Y-clutch 109 is fixed to the Y-slider 108a of each of the planarizing head systems P1, P2, and P3. The structure of these clutches will be described later. Note that XY drive is not performed when both the X-clutch and Y-clutch 109 of the movable part 106a are connected to one substrate chuck.

[0038] 3(a) shows the connection surfaces 301 of the movable part 106a and the Y clutch 109 with the substrate chuck. Abutment members 302a and 302b are configured to extend in the sliding direction of each clutch and abut against contact portions 311a and 311b, respectively. For example, abutment members 302a and 302b of the Y clutch 109, which guide the substrate chuck in the Y direction, are elongated in the X direction, thereby ensuring rigidity in the Y and θz directions. Meanwhile, the Y clutch 109 is configured to follow the surface plate in the θx direction using the air pads of the substrate stage, and to maintain (fix) its positional relationship with the Y slider 108a in the X, Z, and θy directions when it is connected to the substrate chuck.

[0039] Vacuum suction holes 303a and 303b are formed in the connection surface 301, and suction occurs through these suction holes when the clutch is engaged. Electrodes 304a and 304b, which are used to drive the actuator of the θ stage arranged on the substrate chuck and to exchange sensor signals, are also arranged on the connection surface 301. Furthermore, seal members 305a, 305b, 305c, and 305d are also arranged on the connection surface 301. When engaged with the clutch plate on the opposing substrate chuck side, the seal members 305a, 305b, 305c, and 305d are compressed by suction, respectively, and a stable amount of compression is maintained at the positions where the butting members 302a and 302b abut against the abutting portions 311a and 311b. Furthermore, holes 306 and 307 are formed in the connection surface 301, which communicate with vacuum piping that passes through the substrate lift pins used for suction of the substrate chuck.

[0040] FIG. 3(b) shows the clutch plate 302 on the substrate chuck side, facing the connection surface 301 of the movable part 106a and the Y-clutch 109 shown in FIG. 3(a). The clutch plate 302 has contact portions 311a and 311b that contact the abutment members 302a and 302b shown in FIG. 3(a). The electrodes 310a and 310b are mated with the electrodes 304a and 304b shown in FIG. 3(a). Because repeated mechanical contact with each clutch engagement and disengagement can generate dust, the contact portions 311a and 311b and the electrodes 310a and 310b are positioned inside the sealing members 305a and 305b shown in FIG. 3(a) to suck out dust. Furthermore, the clutch plate 302 has vacuum inlets 308 and 309 that correspond to the holes 306 and 307 shown in FIG. 3(a).

[0041] A supply unit 4 that supplies a UV-curable composition, which is a planarizing material (moldable material), is disposed on the path of movement of the substrate chuck by the movable unit 106a along the shared transport path (fixed unit 106b). This supply unit 4 is a jetting module corresponding to the dispenser DP shown in FIG. 7(a). The supply unit 4 has a drive shaft in the Y direction, and its position in the Y direction can be adjusted by a drive mechanism (not shown).

[0042] The alignment scope 107 measures alignment marks formed or arranged on the substrate. In one example, the alignment scope 107 may be a twin-lens alignment scope including a scope 107a and a scope 107b. The Y-direction positions of the scopes 107a and 107b may be adjusted by a scope drive mechanism (Y axis) (not shown) based on the alignment mark arrangement in the design of the substrate 2. From the alignment measurement results obtained by observing the alignment marks on the substrate 2, correction amounts in the X, Y, and θz directions are calculated. The correction amount in the X direction is reflected in the target value of the movable part 106a, the correction amount in the Y direction is reflected in the target position of the supply part 4, and the correction amount in the θz direction is reflected in the target θz positions of the substrate chucks S1, S2, and S3.

[0043] The planarization apparatus 100 may include a control unit C that controls the operation of each unit. The control unit C controls the operation of each unit to control a series of sequences related to the planarization process of the substrate. The control unit C may be configured by a computer device having a processor and memory. The control unit C may be provided inside the planarization apparatus 100, or may be installed outside the planarization apparatus 100 to remotely control each unit.

[0044] Next, the substrate chuck transport control in this embodiment will be described. First, the movable unit 106a, which is a transport unit, transports the substrate chuck S3 (first substrate chuck) of a selected planarizing head system, for example, P3 (first processing unit), to a substrate receiving position at the end of the fixed unit 106b, which is a shared transport path. The substrate chuck S3 receives and chucks the substrate 2 (first substrate) that has been transported to the substrate receiving position by the transport robot 110. The movable unit 106a holds the substrate chuck S3, which is chucked with the substrate 2, with an X-clutch and transports it below the supply unit 4. The supply unit 4 supplies a composition onto the substrate 2 chucked by the substrate chuck S3. The movable unit 106a transports the substrate chuck S3, which is chucked with the substrate 2 to which the composition has been supplied by the supply unit 4, to the planarizing head system P3.

[0045] Next, while the planarizing head system P3 is performing the planarizing process on the substrate 2, the next substrate is processed. That is, the movable part 106a transports the substrate chuck S2 (second substrate chuck) of the planarizing head system P2 (second processing unit) to a substrate receiving position to receive the substrate 2' (second substrate). Thereafter, the substrate chuck S2 on which the substrate 2' is placed moves to the planarizing head system P2. Thereafter, the substrate chuck S1 on which the substrate 2" is placed moves to the planarizing head system P1 in a similar manner. Thereafter, the substrate 2 which has been planarized is recovered by transporting the substrate chuck S3. Thereafter, the substrate 2' which has been planarized is recovered by transporting the substrate chuck S2 in a similar manner, and the substrate 2" which has been planarized is recovered by transporting the substrate chuck S1. In the following, an example is shown in which the substrate chucks S3, S2, and S1 are transported in and out of the corresponding planarizing head systems in this order; however, this order is merely an example, and other orders may be applied.

[0046] 2a to 2p, a specific example of the substrate chuck transfer control outlined in the above paragraph will be described. Fig. 2a shows a state immediately after a substrate 2 removed from a substrate transfer module 101 at the start of a job is pre-aligned in a PA processing module 103 and then transferred to a waiting substrate chuck S3 by a transfer robot 110. In this state, the substrate chuck S3 is fastened to the X-clutch of the movable part 106a.

[0047] FIG. 2b shows the state in which substrate registration is being performed. Substrate registration is a sequence for measuring the position of substrate 2 relative to the device origin, which is determined, for example, on a bridge (not shown) suspended above a surface plate. Specifically, the Y-direction positions of movable part 106a and scopes 107a and 107b are adjusted so that the position of the alignment mark on substrate 2 falls within the field of view of alignment scope 107. From the alignment image obtained by alignment scope 107, the X, Y, and θz deviation amounts of substrate 2 relative to the designed position are obtained. The deviation amounts are measured for each substrate. The obtained deviation amounts are reflected in the subsequent composition supply position (coordinates) and the substrate chuck position in the contact process.

[0048] 2c and 2d show the state in which the composition is dispensed onto the substrate 2 by the substrate chuck S3 being reciprocally scanned under the supply unit 4. That is, the reciprocating scan drive is performed between the state shown in FIG. 2c and the state shown in FIG. 2d with respect to the position of the substrate 2 relative to the supply unit 4. The deviations X, Y, and θz obtained by the substrate registration in FIG. 2b are reflected in the drive target value of the movable part 106a, the drive target value in the Y direction of the dispenser stage on which the supply unit 4 is mounted, and the drive target value of the θz direction of the substrate chuck S3, respectively. Note that although the supply unit 4 includes an array of five inkjet heads in FIGS. 2c and 2d, the number of inkjet heads is not limited thereto. For example, the number of inkjet heads may be reduced by changing the Y direction coordinate of the dispenser stage for each scan, so long as the takt time required for jetting does not become a productivity limiting factor, and the number of times the substrate chuck is scanned under the supply unit 4 may be increased.

[0049] 2e shows a state in which the substrate chuck S3 is driven to the clutch switching position after the supply of the composition is completed, and then the substrate chuck S3 returns to the home position within the planarizing head system P3.

[0050] 2f shows a state in which the Y-clutch 109 fixed to the Y-slider 108a has moved to the transfer position to receive the substrate chuck S3 from the movable part 106a. In this sequence, the substrate chuck S3 is coupled to the Y-clutch 109, and immediately thereafter, the coupling between the movable part 106a and the substrate chuck S3 is released.

[0051] FIG. 2g shows the state in which the substrate chuck S3 is guided by the Y-clutch 109 connected to the substrate chuck S3 and returned to the home position of the planarizing head system P3. The planarizing head system P3 then performs the contact, curing, and demolding processes. According to the inventor's research, the time required for each of the contact, curing, and demolding processes is estimated to be approximately 60 seconds, although this time may vary depending on the conditions. Therefore, while the planarizing process is being performed by the planarizing head system P3, the shared space 111 can be vacated for another planarizing head system to perform a planarizing process or to retrieve a planarized substrate. Vacating the shared space 111 means allocating the use of the alignment scope 107, supply unit 4, and movable unit 106a within the shared space 111 to another planarizing head system. For example, the X-slider 106a, having been released from the substrate chuck S3, steps to the same X-coordinate position as the planarizing head system P2, as shown in FIG. 2g, to prepare for coupling with the substrate chuck S2 in the next sequence.

[0052] 2h shows a state in which the substrate chuck S2 of the planarizing head system P2 has been driven to the gripping position of the movable part 106a, where the substrate chuck S2 is coupled to the movable part 106a.

[0053] Figure 2i shows that the substrate chuck S2 moving part 106a, the Y-clutch 109 is disengaged from the substrate chuck S2. In order to ensure a gap that allows the substrate chuck S2 to be driven in the X direction, the Y-slider 108a (i.e., the Y-clutch 109) retracts in a direction away from the substrate chuck S2.

[0054] Fig. 2j shows a state in which the substrate chuck S2 is positioned at the substrate transfer position similar to that shown in Fig. 2a. At this time, in the pre- and post-processing module 102, the hand of the transfer robot 110 is waiting while holding the pre-aligned substrate 2'.

[0055] As the processing of multiple substrates progresses as described above, the planarized substrates are returned to the substrate chuck. At this time, a recovery hand (not shown) mounted on the transport robot 110 recovers the processed substrate first. Once the substrate is recovered, or when no substrate is left on the substrate chuck S2, the next substrate 2' to be processed is received from the transport robot 110. Figure 2k shows the state in which the substrate 2' has been loaded onto the substrate chuck S2 by the transport robot 110.

[0056] Figure 2l shows the state in which the substrate chuck S2 holding the substrate 2' has returned to the planarizing head system P2, and the substrate chuck S1 holding the substrate 2" has returned to the planarizing head system P1. The process for the substrate 2' and the substrate 2" from the state in Figure 2k to the state in Figure 2l is the same as the process in Figures 2b to 2g showing the movement of the substrate chuck S3, so a detailed description will be omitted.

[0057] FIG. 2m shows a sequence for recovering the substrate 2 after the planarization process by the planarizing head system P3 is completed (FIG. 2l). The substrate chuck S3 is moved to a position for exchange with the movable part 106a by the drive of the Y slider 108a of the planarizing head system P3, and the substrate chuck S3 is connected to the movable part 106a. In FIG. 2n, after the substrate chuck S3 is connected to the movable part 106a, the connection between the substrate chuck S3 and the Y clutch 109 is released. To ensure a gap that allows the substrate chuck S3 to be driven in the X direction, the Y slider 108a (i.e., the Y clutch 109) retracts in a direction away from the substrate chuck S3.

[0058] 2o shows a state in which the substrate chuck S3 is positioned at the substrate transfer position, similar to FIG. 2a. At this time, in the pre-post processing module 102, the hand of the transfer robot 110 is waiting while holding the fourth substrate (not shown) that has been pre-aligned in the PA processing module 103. A recovery hand (not shown) mounted on the transfer robot 110 recovers the processed substrate 2 chucked on the substrate chuck S3 (FIG. 2p). Thereafter, the fourth substrate to be processed is transferred to the substrate chuck S3.

[0059] The processes for recovering the substrates 2' and 2" are also performed in the same manner as the processes shown in Figures 2m to 2p, so the details of these processes are omitted here, but a chart summarizing these movements is shown in Figure 6.

[0060] Fig. 6 is a timing chart showing the parallel processing of the planarization processing shown in Fig. 2a to p. In Fig. 6, "Wafer#" indicates the number of the substrate to be processed. Here, an example is shown in which four substrates numbered 1 to 4 are processed in parallel. WLD601 indicates the loading time for loading the first substrate from the hand of the transfer robot 110 onto the substrate chuck S3. WREG 602 indicates the registration measurement time using the alignment scope 107 for the substrate attracted to the substrate chuck S3. Jetting 603 indicates the time (time required for reciprocating scanning) during which the composition is supplied by the supply unit 4 to the substrate held by the substrate chuck S3. SWAP 604 indicates the time when the substrate chuck S3 is transferred from the movable part 106a to the Y clutch 109. Planar 605 indicates the time of the contact process (contact-fill time) by the planarizing head system P3. Expo 606 indicates the time (exposure time) of the curing process by the planarizing head system P3. Separate 607 indicates the time for the demolding process by the flattening head system P3. SWAP 608 indicates the time from when the substrate chuck S3 is guided by the Y clutch 109 to the X slider driving area until it is transferred from the Y clutch 109 to the movable part 106a. WULD+WLD 631 indicates the unload / load time taken by the transfer robot 110 to retrieve the first substrate from the substrate chuck S3 and load the fourth substrate onto the substrate chuck S3. WREG 632, Jetting 633, and SWAP 634 are the same processes as WREG 602, Jetting 603, and SWAP 604 described above, respectively.

[0061] Since processing in the shared space 111 competes among multiple substrate processes, it is necessary to ensure that the timings of WLD601 to SWAP604 and SWAP608 to SWAP634 for each substrate do not overlap. Timing 611, at which the transfer robot 110 loads the second substrate 2' onto the substrate chuck S2, is scheduled retroactively from the timing (SWAP634) at which the fourth substrate is sent to the planarizing head system P3. The same applies to timing 621, at which the transfer robot 110 loads the third substrate 2" onto the chuck S1.

[0062] The planarization apparatus 100 in this embodiment is equipped with three planarization head systems, so one processing cycle consists of three substrates. The substrate productivity of the planarization apparatus 100 can be determined by the cycle time shown in the figure, which is the time from when the first substrate is loaded into the planarization head system P3 to when the fourth substrate is loaded into the planarization head system P3. In the example of FIG. 6, the cycle time is approximately 72 seconds, so the substrate productivity is 3 wafers / 72 seconds = 150 wph. "wph" indicates the number of substrates processed per hour (wafers / hour).

[0063] Planar 605, which indicates the contact time, Expo 606, which indicates the curing time, and Separate 607, which indicates the demolding time, are process recipe parameters whose optimal values ​​vary depending on the viscosity of Composition ML and changes in the contact process profile. In the example shown in Figure 6, 57 seconds of the cycle time (72 seconds) correspond to Planar 605, Expo 606, and Separate 607. The remaining 15 seconds correspond to SWAP 608, WULD+WLD 631, WREG 632, Jetting 633, and SWAP 634.

[0064] 8 is a graph showing the relationship between the number of planarizing head systems included in the planarizing processing module 104 and productivity (throughput). The horizontal axis shows the takt time of the planarizing head system, which can vary depending on the process recipe parameters, and the vertical axis shows the number of substrates processed per hour (wph) as throughput (TP). "TP(2-PM)" shows the throughput when two planarizing head systems are used, "TP(3-PM)" shows the throughput when three planarizing head systems are used, and "TP(4-PM)" shows the throughput when four planarizing head systems are used.

[0065] Productivity can be determined depending on the number of planarizing head systems, the takt time of each planarizing head system, and the takt time required for processing in the shared space 111 (i.e., loading and unloading of substrates), substrate registration, composition supply, and clutch switching. Productivity peaks out at 240 wph because the takt time of the shared Y-direction stage, alignment scope 107, and supply unit 4 is defined as 15 seconds in this embodiment.

[0066] According to the first embodiment described above, a substrate chuck is transported along a shared transport path together with a substrate, and each step of the planarization process is performed on the substrate chucked by the substrate chuck. This eliminates the need for a transport robot to transport substrates between modules, simplifying the device configuration. Furthermore, since there is no need to transfer substrates between the substrate chuck and the transport robot in each planarization processing unit, productivity (throughput) is also improved. In these respects, this embodiment is advantageous in terms of maintaining high productivity in a cluster configuration of a planarization device while reducing the complexity of the device system.

[0067] Second Embodiment In the second embodiment, multiple curing units are arranged at positions different from the flattening head systems P1, P2, and P3. FIG. 9 is a diagram showing the configuration of a flattening apparatus 100 according to the second embodiment. In FIG. 9, the stroke of the guide rail 108b of the Y slide actuator is extended compared to the configuration shown in FIG. 1, and a UV irradiation position by the light source 406 is provided beyond that (upper side of the paper). That is, in FIG. 9 In this example, the curing process is performed at a location different from the planarization head systems P1, P2, and P3. This configuration makes it easy to design the outer dimensions of the superstrate 3 to be the same size as the substrate (e.g., 300 mm). Therefore, the same infrastructure as for substrates can be used for cleaning, coating, and transporting the superstrate 3 using FOUP / FOSB (Front Opening Shipping Box).

[0068] The outline of the flattening process in the configuration of FIG. 9 is as follows.

[0069] In FIG. 6, in the sequence indicated as "Planar" (e.g., 605), a contact process is performed on the substrate to which the composition has been applied. The superstrate 3 is then dechucked from the superstrate chuck 502, and the superstrate is completely placed, via the composition, on the substrate chucked by the substrate chucks S1 / S2 / S3. In this state, the substrate chucks S1 / S2 / S3 are moved under the corresponding light sources E1 / E2 / E3, and a curing process (UV exposure) is performed. The light sources E1 / E2 / E3 may be surface-emitting light sources. Alternatively, rod-shaped light sources H1 / H2 / H3 may be arranged to scan and expose the substrate chucks S1 / S2 / S3 in the Y direction.

[0070] Alternatively, instead of light sources H1 / H2 / H3, a light source H4 for scanning exposure may be arranged in the shared space 111, as shown in FIG. 9. When the number of planarizing head systems is small and productivity is not an issue, such a configuration can reduce the cost of the apparatus. After the exposure (curing process), the substrate chucks S1 / S2 / S3 return to under the planarizing head systems P1 / P2 / P3, and the superstrate chuck 502 re-adsorbs the superstrate 3, after which the demolding process is performed. The subsequent processing sequence is the same as in the first embodiment.

[0071] Third Embodiment The composition (UV-curable composition) supplied onto the substrate by the supply unit 4 begins to volatilize immediately after supply. The evaporation rate of the UV-curable composition increases as the saturated vapor pressure increases. The evaporation rate decreases as the vapor pressure in the space approaches the saturated vapor pressure due to the evaporation of the UV-curable composition supplied onto the substrate. Therefore, in this embodiment, a cover plate 1001 is provided to prevent the composition from volatilizing. As shown in FIG. 10 , the cover plate 1001 is positioned so as to cover the surface of the substrate 2 from above, providing a gap G between the substrate and the cover plate 1001 within the range of movement of the substrate 2 along the transport path of the substrate chucks S1 / S2 / S3. The gap G between the substrate 2 on the substrate chucks S1 / S2 / S3 and the cover plate 1001 is set to, for example, 0.5 to 4 mm. This facilitates saturation of the vapor pressure of the composition in the gap, thereby minimizing the evaporation of the composition. The cover plate 1001 covers the substrate at least above the substrate movement path between the supply unit 4 and directly below the planarizing head systems P1 / P2 / P3. Figure 10 shows an example of the cover plate 1001 in the configuration of the second embodiment (Figure 9) in which multiple curing units are arranged at positions different from the planarizing head systems. In the example of Figure 10, the cover plates 1001 are arranged between the substrate receiving position and the supply unit 4, between the supply unit 4 and the planarizing head systems P1 / P2 / P3, and between the planarizing head systems P1 / P2 / P3 and the light sources E1 / E2 / E3. According to this embodiment, it is possible to further suppress the volatilization of the composition, and in turn, it is possible to improve the planarization processing performance.

[0072] <Embodiment of an article manufacturing method> Next, a method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, a color filter, or a MEMS) using the planarization apparatus described above will be described. This manufacturing method includes the steps of contacting a composition disposed on a substrate (such as a wafer or glass substrate) with a superstrate to planarize the composition, curing the composition, and separating the composition from the superstrate using the planarization apparatus described above. This results in a planarization film being formed on the substrate. The substrate with the planarization film formed thereon is then processed, such as by forming a pattern using a lithography apparatus, and the processed substrate is then subjected to other well-known processing steps to manufacture the article. These other well-known steps include patterning exposure and associated pre-processing, etching, resist stripping, dicing, bonding, packaging, and the like. This manufacturing method enables the manufacture of higher-quality articles than conventional methods.

[0073] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0074] S1, S2, S3: substrate chuck, P1, P2, P3: flattening head system, 2: substrate, 4: supply unit, 100: flattening device, 101: substrate transfer module, 102: pre-post processing module, 103: PA processing module, 104: flattening processing module, 110: transfer robot

Claims

1. a plurality of processing sections each including a substrate chuck and performing a planarization process on a substrate supported by the substrate chuck; a transport unit configured to transport a substrate chuck of a processing unit selected from the plurality of processing units along a transport path including a shared transport path shared by the plurality of processing units; a supply unit disposed on a path of movement of the substrate chuck along the shared transport path by the transport unit, the supply unit supplying a composition used in the planarization treatment onto the substrate supported by the substrate chuck; A flattening apparatus comprising:

2. the transport unit transports a first substrate chuck, which is a substrate chuck of a first processing unit selected from the plurality of processing units, to a substrate receiving position at an end of the shared transport path; the first substrate chuck receives and supports the first substrate carried into the substrate receiving position; the transport unit transports the first substrate chuck supporting the first substrate to below the supply unit; the supply unit supplies the composition onto the first substrate supported by the first substrate chuck; the transport unit transports the first substrate chuck supporting the first substrate, to which the composition has been supplied by the supply unit, to the first processing unit; 2. The planarization apparatus according to claim 1.

3. 3. The planarization apparatus of claim 2, wherein while the first processing unit is performing the planarization process on the first substrate, the transport unit transports a second substrate chuck, which is a substrate chuck of a second processing unit selected from the plurality of processing units, to the substrate receiving position to receive the second substrate.

4. The plurality of processing units are arranged in a row, the shared transport path is provided to extend along the row; 4. The planarization apparatus according to claim 1, wherein the planarization apparatus is a flattening apparatus.

5. The conveying unit is a first guide rail extending along the row and constituting the shared transport path; a first clutch that connects the substrate chuck and moves while being guided by the first guide rail; 5. The planarization apparatus according to claim 4, further comprising:

6. The conveying unit is a second guide rail constituting an individual transport path branching from the shared transport path to each of the plurality of processing sections; a second clutch that connects the substrate chuck and moves while being guided by the second guide rail in a state where the connection with the first clutch is released; 6. The planarization apparatus according to claim 5, further comprising:

7. 7. The planarization apparatus according to claim 1, wherein the planarization process is performed by contacting the flat surface of a superstrate with a composition on a substrate to form a planarization film of the composition on the substrate.

8. The apparatus further includes a plurality of curing units arranged at positions different from the plurality of processing units and curing the composition, The transport unit further transports the substrate chuck along a transport path between the plurality of processing units and the plurality of hardening units.

8. The planarization apparatus according to claim 7.

9. Further comprising a superstraight chuck for holding the superstraight, 9. The planarization apparatus of claim 8, wherein the planarization process in a selected processing unit among the plurality of processing units brings the superstrate into contact with the composition on the substrate, and the transport unit transports the substrate chuck of the selected processing unit holding the substrate to a curing unit corresponding to the selected processing unit, with the superstrate chuck releasing its hold on the superstrate.

10. 10. The planarization apparatus according to claim 1, further comprising a cover plate that covers the surface of the substrate from above, providing a gap between the cover plate and the substrate within the range of movement of the substrate along the transport path.

11. forming a planarization film on a substrate using the planarization apparatus according to any one of claims 1 to 10; processing the substrate on which the planarization film is formed; and manufacturing an article from the processed substrate.

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