Method and apparatus for fluidity gap filling

Abstract

To provide improved methods and apparatuses for flowable gap-fill processes.SOLUTION: A multi-process chamber module includes: a cyclical gap-fill process in which deposition followed by thermal annealing is repeated; a process in which the deposition and thermal annealing are carried out in a separate station; and a process of heating to a higher temperature than the first station. The thermal annealing includes rapid thermal annealing (RTA).SELECTED DRAWING: Figure 3B

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit under 35 U.S.C. § 119 of U.S. Provisional Patent Application No. 63 / 094,768, entitled "Method And APARATUSES FOR FLOWABLE GAP-FILL," filed October 21, 2020. The foregoing application is incorporated herein by reference in its entirety under 37 CFR § 1.57. All applications for which a foreign or domestic priority claim is identified in the Application Data Sheet filed with this application are incorporated herein by reference under 37 CFR § 1.57. [Background technology]

[0002] Integrated circuits are typically manufactured by sophisticated processes in which layers of various materials are built up sequentially in predetermined arrangements on a semiconductor substrate.

[0003] Some embodiments herein relate to semiconductor manufacturing and methods and apparatus for flowable deposition of thin films. In semiconductor manufacturing, it is often necessary to fill gaps in substrates with, for example, insulating materials. As device geometries shrink, void-free filling of gaps becomes increasingly difficult due to limitations of existing deposition processes. Films deposited by existing flowable gap-fill processes typically have various drawbacks. For example, they may exhibit low quality and / or poor thermal stability. This can result in film shrinkage of 40% or more after annealing at elevated temperatures (e.g., about 400°C) at faster than desired wet etch rates.

[0004] Many deposition processes have difficulty filling the small trenches and other gap features used in current semiconductor processing schemes. Individual trenches and other gap-type features produced at any given technology node have major dimensions significantly smaller than the critical dimensions that define the node. Thus, it is common to find gaps on the nanometer scale. Furthermore, unless the process is extremely adaptive, the gaps will pinch off at their necks, forming voids. Furthermore, many of these gaps have relatively high aspect ratios.

[0005] Filling gaps with fill material while avoiding voids within the fill material is challenging. Recent miniaturization of semiconductor devices, such as self-aligned contact (SAC) gap fill in MEOL devices and dummy fin gap fill / gate-all-around (GAA) lateral gap fill in FEOL devices, requires completely void-free, seamless gap fill with high etch stability and post-thermal shrink film quality. For example, conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD) of SiN films inevitably result in seams and / or voids within the gap structure. Obtaining a flowable SiN film during film deposition is extremely difficult. For example, Figure 1A shows an example of gap filling using thin ALD or CVD deposition. As shown, the ALD or CVD deposition itself can result in the formation of one or more voids within the gap. Figure 2A shows a scanning transmission electron microscope (STEM) image of an exemplary flowable SiCN film formed using ALD or CVD deposition. The SiCN film gap in Figure 2A exhibits multiple voids.

[0006] One method to reduce the formation of seams or voids in SiN or SiCN film deposition in gaps is to use flowable deposition with additional elements, such as carbon (e.g., methyl groups) or hydrogen (e.g., amine groups), added to the gap-fill precursor. This method can result in flowable SiCN or SiN deposition that is substantially seam / void-free. Figures 1B and 2B show examples of void-free gap-fill using flowable deposition with carbon- or hydrogen-enhanced precursors. However, flowable deposition processes are often performed at low temperatures (e.g., below 150°C) to maintain precursor flowability, resulting in reduced film quality. Films deposited by flowable gap-fill typically exhibit poor quality and / or poor thermal stability. This can result in film shrinkage of 40% or more after annealing at elevated temperatures (e.g., around 400°C), which is faster than desired wet etch rates.

[0007] High-quality flowable SiCN / SiN films can be achieved using post-deposition treatments. However, as mentioned above, post-deposition treatment of wafers can result in slower throughput. Furthermore, a single post-deposition treatment can provide limited modification depth. For example, Figures 1C and 2C show an example of flowable deposition gapfill using a post-deposition anneal (i.e., thermal treatment). As shown in the STEM images of Figures 1C and 2C, a single post-deposition anneal does not form a completely void-free, seamless gapfill. A single thermal treatment can result in film shrinkage, which can lead to void formation at the bottom of the film, as shown in Figures 1C and 2C.

[0008] Several other methods have been proposed to improve film quality after flowable deposition, including post-deposition plasma or ultraviolet (UV) treatment. However, the film quality obtained using plasma or UV-based treatments is limited. In-situ cyclic plasma curing can be used to improve film quality. This eliminates film shrinkage and improves the wet etch rate to a desired value. However, a disadvantage is that the fill capacity is significantly reduced when using in-situ cyclic plasma curing. While not being bound by any particular theory, the reduction in fill capacity may be caused by redeposition of outgassed species during cyclic plasma treatment. Furthermore, post-deposition treatments often result in reduced throughput. Therefore, improved methods and apparatus for flowable gap-fill processes are needed. Summary of the Invention [Means for solving the problem]

[0009] For purposes of this Summary, certain aspects, advantages, and novel features of the invention have been described herein. It is to be understood that not all such benefits may necessarily be achieved in accordance with any particular embodiment of the invention. Thus, for example, one skilled in the art will recognize that the invention can be embodied or carried out in a way that achieves one advantage or group of advantages taught herein without necessarily achieving other advantages taught or suggested herein.

[0010] In some embodiments, a method for flowable gap-fill deposition is provided. In some embodiments, the method can include: (a) placing a substrate in a first station; (b) depositing a flowable material on the substrate in the first station by a deposition process at a first temperature, where the first temperature is less than 300°C; (c) after depositing the flowable material on the substrate, placing the first substrate in a second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, where the second temperature is between 80°C and 1000°C; and cyclically repeating (a) through (d) until a film of a desired thickness is deposited on the substrate.

[0011] In some embodiments, the flowable material is formed by an alkyl-silazane or aminosilane precursor. In some embodiments, the heat treatment can include rapid thermal annealing (RTA) by infrared (IR) treatment. In some embodiments, the RTA includes heating the surface of the substrate to a second temperature for less than 10 seconds. In some embodiments, the second temperature is between 800°C and 1000°C.

[0012] In some embodiments, the first station comprises an upper chamber and a lower chamber, and the lower chamber comprises a shared intermediate space between the first station and the second station. In some embodiments, the first station and the second station comprise a shared pressure system such that the first station and the second station are maintained at a common pressure during cycling. In some embodiments, the first station comprises a first station heating unit configured to control the temperature of the first station independently from the temperature of the second station, and the second station comprises a second station heating unit configured to control the temperature of the second station independently from the temperature of the first station.

[0013] In some embodiments, the first temperature is less than 300° C. In some embodiments, the film comprises a SiNH or SiCNH film. In some embodiments, the film fills at least 90% of the gaps on the surface of the substrate, at least 95% of the gaps on the surface of the substrate, at least 99% of the gaps on the surface of the substrate, or at least 99.5% of the gaps on the surface of the substrate. In some embodiments, the substrate comprises silicon or germanium.

[0014] In some embodiments, the method further includes introducing one or more process gases into the first station during contact with the substrate at the first station, the process gases being selected from the group consisting of Ar, He, N 2、 H 2、 NH 3、 O2, or a combination of one or more of the above. In some embodiments, the precursor comprises an alkyl-silazane or aminosilane, hexamethylcyclotrisilazane (HMCTS), or trisilylamine (TSA). In some embodiments, the common pressure during the cycle is between 300 Pa and 2800 Pa.

[0015] In some embodiments, the cycle further comprises plasma curing the substrate after step (b) or (d), wherein the plasma curing comprises a micropulsed radio frequency (RF) plasma at the first station or the second station. In some embodiments, the substrate is plasma cured at the second station after the substrate is annealed at the second station.

[0016] In some embodiments, a semiconductor processing apparatus is provided, the apparatus comprising one or more process chambers, each process chamber comprising two or more stations, each station including an upper compartment and a lower compartment, the upper compartment configured to accommodate a substrate during substrate processing and the lower compartment including a shared intermediate space between the two or more stations, a first transfer system configured to move a substrate from a first process chamber to a second process chamber within a wafer handling chamber, a second transfer system configured to move a substrate from the first station to the second station within a feed intermediate space of the process chambers, a first heating unit configured to control a first station temperature independently from a second station temperature, a pressure system including a pump and an exhaust source. The apparatus includes a pressure system configured to maintain a common process chamber pressure within two or more stations, and a controller including a processor that provides instructions to control the apparatus to: (a) place a substrate in a first station; (b) deposit a flowable material on the substrate in the first station by a vapor deposition process at a first temperature, the first temperature being less than 300° C.; (c) place the first substrate in a second station after depositing the flowable material on the substrate; (d) perform a thermal treatment on the substrate by heating a surface of the substrate in the second station to a second temperature, the second temperature being between 80° C. and 650° C.; and repeat (a) through (d) in cycles until a film of a desired thickness is deposited on the substrate. In some embodiments, the thermal treatment is performed every 1 nm to 5 nm of deposition film thickness, or every 5 nm to 50 nm of deposition film thickness.

[0017] Some embodiments herein relate to flowable gap-fill deposition, a method including: (a) placing a substrate in a first station, the first station including an upper chamber and a lower chamber, the lower chamber including a shared intermediate space between the first station, the second station, the third station, and the fourth station; (b) contacting the substrate in the first station with a precursor at a first temperature, the contacting with the precursor forming a first flowable film layer in the gap of the first substrate; (c) after contacting the substrate with the precursor in the first station, placing the substrate in a second station; and (d) heating the substrate in the second station to a second temperature. (f) contacting the substrate in a third station with a precursor at a first temperature, wherein contacting with the precursor forms a second flowable film layer in the gaps of the first substrate; (g) after contacting the substrate in the third station with the precursor, placing the substrate in a fourth station; (h) performing a second anneal on the substrate by heating the substrate in the fourth station to a second temperature to densify the second flowable film layer; and repeating (a)-(h) in a cycle until a film of a desired thickness is deposited on the first substrate, wherein the second temperature is different from the first temperature.

[0018] Some embodiments herein relate to flowable gap-fill deposition, a method including: (a) placing a substrate in a station; (b) contacting the substrate in a first station with a precursor at a first temperature, where contacting with the precursor forms a flowable film layer in gaps of the first substrate; (c) performing an anneal on the substrate by heating a surface of the substrate to a second temperature in the first station to densify the flowable film layer, where the second temperature is higher than the first temperature and is between 80°C and 1000°C; and repeating (a)-(c) in cycles, where the first temperature is lower than the second temperature, until a film of a desired thickness is deposited on the first substrate. In some embodiments, the surface of the substrate is heated to the second temperature by one or more infrared lamps. In some embodiments, the surface of the substrate is heated to the second temperature for less than 10 seconds. [Brief explanation of the drawings]

[0019] The drawings are provided to illustrate exemplary embodiments and are not intended to limit the scope of the present disclosure. A better understanding of the systems and methods described herein will be appreciated by reference to the following description in conjunction with the accompanying drawings, in which:

[0020] [Figure 1] 1A-1D show several different types of gap filling processes. [Figure 2] 2A-2D show scanning transmission electron microscope (STEM) images of exemplary flowable SiCN films using the various gap-filling processes illustrated in FIGS. 1A-1D. [Figure 3A] FIG. 3A shows a conventional apparatus for performing deposition and subsequent annealing. [Figure 3B] FIG. 3B illustrates a multi-process chamber module according to some embodiments described herein. [Figure 3C] FIG. 3C illustrates a multi-process dual chamber module according to some embodiments described herein. [Figure 4] FIG. 4 shows a schematic diagram of a multi-process chamber module according to some embodiments described herein. [Figure 5] FIG. 5 shows a top-down view of a multi-process chamber module according to some embodiments described herein. [Figure 6A] FIG. 6A shows an exemplary diagram of a heating unit for use in a fluidic deposition station according to some embodiments herein. [Figure 6B] FIG. 6B shows an exemplary diagram of a heating unit for use in an annealing station according to some embodiments herein. [Figure 7A] FIG. 7A shows an example of a gap-fill method using repeated cycles of ALD and annealing, according to some embodiments herein. [Figure 7B] FIG. 7B illustrates an example of a gap-fill method using repeated cycles of CVD and annealing, according to some embodiments herein. [Figure 7C] FIG. 7C illustrates an example of a gap-fill method using repeated cycles of ALD and annealing with plasma curing, according to some embodiments herein. [Figure 8] FIG. 8 illustrates an example of a gap filling method using rapid thermal annealing (RTA) according to some embodiments herein. DETAILED DESCRIPTION OF THE INVENTION

[0021] Although certain preferred embodiments and examples are disclosed below, the inventive subject matter extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses, as well as modifications and equivalents thereof. Accordingly, the claims appended hereto are not limited by any of the specific embodiments described below. For example, in any method or process disclosed herein, the acts or operations of the method or process may be performed in any suitable order and are not necessarily limited to any particular disclosed order. Various operations may be described as multiple, discrete operations, in a manner that may be useful for understanding particular embodiments, but the order of description should not be construed as implying that these operations are order-dependent. Furthermore, the structures, systems, and / or devices described herein may be embodied as integrated or separate components. For purposes of comparing various embodiments, certain aspects and advantages of these embodiments are described. It is not necessarily the case that all such aspects or advantages are achieved in accordance with any particular embodiment. Thus, for example, various embodiments can be implemented in a manner that achieves or optimizes one advantage or group of advantages taught herein without necessarily achieving other aspects or advantages taught or suggested herein.

[0022] Certain exemplary embodiments will now be described to provide a general understanding of the principles of the structure, function, manufacture, and use of the devices and methods disclosed herein. One or more examples of these embodiments are illustrated in the accompanying drawings. Those skilled in the art will understand that the devices and methods specifically described herein and illustrated in the accompanying drawings are non-limiting exemplary embodiments, and that the scope of the invention is defined only by the claims. Features illustrated or described in connection with one exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be within the scope of the technology.

[0023] Preface According to some embodiments herein, methods and apparatus for flowable deposition of thin films are described. The methods and apparatus described herein relate to filling gaps or other three-dimensional features on a substrate, such as trenches, with a solid material by forming a flowable film within the gap. Some embodiments herein relate to a cyclic process comprising a deposition cycle including flowable deposition and a thermal treatment. In some embodiments, the thermal treatment may include heating the substrate to an elevated temperature relative to the deposition. In some embodiments, the thermal treatment may occur in a separate chamber or station from the deposition. In other embodiments, the thermal treatment may occur by heating a susceptor or substrate stage to a temperature higher than that used in the flowable deposition. In some embodiments, the thermal treatment may include rapid thermal annealing (RTA) via infrared (IR) treatment. In some embodiments, the cycle may occur in a multi-process chamber including one or more stations connected by a shared intermediate space. As used herein, the term "substrate" may refer to any underlying material or material that can be used to form a device, circuit, or film, or any underlying material or material on which a device, circuit, or film can be formed. A variety of substrates and deposition chemistries can be used according to embodiments herein. The substrate can include bulk materials such as silicon (e.g., single crystal silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductors, and can include one or more layers overlying or underlying the bulk material. The terms "wafer" and "substrate" are used interchangeably herein.

[0024] In some embodiments, cyclical temperature treatment can be used as part of the gap-fill deposition process. In some embodiments, the cyclical temperature treatment can include gap-filling at a low temperature followed by curing at a high temperature. In some embodiments, a cyclical gap-fill deposition process including deposition cycles that include a thermal treatment step can fill gaps without forming voids or seams, or can reduce void or seam formation relative to processes that do not use cyclical treatment. In some embodiments, the cyclical temperature treatment described herein can provide improved throughput compared to post-deposition treatment processes that require transfer to a different reaction chamber. In some embodiments, treating the grown film with an elevated temperature in each deposition cycle can result in improved films with reduced seam or void formation, for example, compared to other processes. In some embodiments, the thermal treatment can improve crosslinking. In some embodiments, the cyclical temperature treatment can be free of plasma treatment. Without being limited by any particular theory, avoiding plasma treatment can prevent redeposition of outgassed species and result in improved gap-fill. In some embodiments, multiple stations can be used, including stages set at different temperatures and a transfer system for transferring wafers between stations. In some embodiments, different stations and different temperatures are used for flowable deposition rather than thermal curing.

[0025] Some embodiments herein include using a multi-process chamber apparatus having one or more low-temperature deposition stations and one or more annealing stations. In some embodiments, a multi-process quadruple chamber module (QCM) may be used, in which one or more low-temperature deposition stations and one or more annealing stations are used. For example, some apparatus may include two deposition stations and two annealing stations. In some embodiments, a-CH, SiCN, SiN, SiON, SiCO, SiCOH, SiCNH, SiCH, SiNH, or SiCON gap fill may be utilized. Thus, while embodiments herein are described primarily with respect to SiN and / or SiCN deposition, embodiments herein are broadly applicable to a variety of process chemistries.

[0026] In FIGS. 1C and 2C, a single post-deposition thermal treatment can be used to achieve relatively high-quality flowable SiCN / SiN films. However, as discussed above, post-deposition treatment of wafers can result in undesirable degradation of throughput. Furthermore, a single post-deposition treatment may be ineffective due to limited modification depth. Therefore, as illustrated in FIGS. 1D and 2D, a cyclic deposition process that includes a thermal treatment (e.g., annealing) in each cycle can provide improved gap filling. In some embodiments, cyclic annealing can be very effective in preventing film shrinkage problems. FIG. 1D shows an example of flowable gap filling using cyclic annealing. FIG. 2D shows a STEM image of SiCN flowable gap filling using cyclic annealing. As illustrated in FIGS. 1D and 2D, flowable gap filling using a cyclic process that includes one or more cycles that include a thermal treatment phase can produce void-free, seam-free, high-quality films. In some embodiments, the cyclic process can be performed in a conventional reaction chamber apparatus. In some embodiments, the cyclic process can be performed in a QCM apparatus, as discussed herein.

[0027] FIG. 3A illustrates a conventional apparatus for performing deposition and subsequent annealing. As illustrated, the conventional apparatus may include one or more deposition chambers containing one or more stations for performing the deposition process. The one or more deposition chambers may be separated from one or more annealing chambers via a wafer handling chamber or other transfer chamber. For typical cyclical processing using multiple chambers, the wafer transfer time between the deposition chamber and the annealing chamber through the transfer chamber may be even longer than the processing time. To address this issue, some embodiments may use a multi-processing chamber in which different processes are performed within a single chamber using separate stations, dramatically reducing wafer transfer time.

[0028] Thus, for example, a multi-processing apparatus having one or more low-temperature deposition stations and one or more high-temperature annealing stations is described herein. The thermal treatment provided by the annealing station can improve the flowable film quality of, for example, SiCN / SiN films. As mentioned above, plasma or UV treatments are limited in improving the uniform quality across the film depth. By using thermal processes, film modification and uniformity can be significantly improved.

[0029] FIG. 3B illustrates a multi-process chamber module according to some embodiments described herein. In some embodiments, the multi-process chamber module may include a quad-station arrangement with two low-temperature deposition stations, shown in FIG. 3B as RC1 and RC3. The remaining two stations may include high-temperature annealing stations, shown in FIG. 3B as RC2 and RC4. In some embodiments, more stations may be present in the multi-process chamber module. Generally, these additional stations include at least one additional deposition station and at least one additional treatment station. In some embodiments, the multi-process chamber module includes at least two stations: one deposition station and one thermal treatment station.

[0030] As used herein, a "station" broadly refers to a location that can contain a substrate such that a process can be performed on the substrate within the station. Thus, a station can refer to a reactor, or a portion of a reactor, or a reaction space or chamber within a reactor. In some embodiments, stations according to embodiments herein are "gas-insulated" from one another or configured to be gas-insulated while a substrate is being processed within the station. In some embodiments, the stations are gas-insulated by a physical barrier rather than a gas bearing or gas curtain. In some embodiments, the stations are gas-insulated by a physical barrier in combination with a gas bearing and gas curtain. In some embodiments, after or simultaneously with placement of a substrate in a particular station, the substrate may be gas-insulated from other stations (so that a processing step can be performed in that station), and after the substrate is processed in the station, the station may be withdrawn from gas insulation, and the substrate removed from the station and placed in an intermediate space. Substrates from multiple different stations can be placed in a shared intermediate space for transfer between stations. The stations can be gas-insulated, for example, by a physical barrier. In some embodiments, the stations are not gas-insulated. In some embodiments, one or more stations include a heating and / or cooling system, and different precursors in different stations can simultaneously process substrates at different temperatures. Thus, in some embodiments, a first station is entirely at a lower or higher temperature than a second station entirely, or the first station includes a susceptor that is at a lower or higher temperature than the susceptor in the second station, and / or a first precursor flows into the first station while a second precursor flows into the second station at a lower or higher temperature than the first station.

[0031] In some embodiments, the stations are separated from one another by solid materials and not by gas bearings or gas curtains. In some embodiments, the stations are separated from one another by solid materials or gas curtains and not by gas bearings. In some embodiments, the stations are separated from one another by solid materials or gas bearings and not by gas curtains. Optionally, the physical barrier can move with a motion stage that transports the substrate back and forth between the station and the intermediate space, such that the physical barrier puts the station in a gas-insulated state at the same time as (or shortly before or after) the substrate is placed in that station. Optionally, the physical barrier can be used in conjunction with a gas barrier, for example, to fill any gaps left by the physical barrier. In some embodiments, a physical barrier is provided, but no gas barrier or gas curtain is provided.

[0032] In some embodiments, the stations comprise modules or chambers of the reactor, such that each station comprises a separate chamber or module. In some embodiments, the stations comprise portions of the reaction chamber, which can be gas-insulated from other portions of the reaction chamber by positioning walls, gas curtains, or gas bearings between the stations. Optionally, a given station is completely surrounded by one or more walls, gas curtains, gas bearings, or any combination of these items. However, in some embodiments, the stations are not separated.

[0033] As shown in FIG. 3B , during a gap fill process according to some embodiments herein, a wafer may be rotated through stations. For example, a wafer may enter the chamber at station RC1, where it may be subjected to a first fluidic deposition process. In some embodiments, after the first fluidic deposition process, the wafer may be transferred to station RC4, as shown in FIG. 3B . Alternatively, the wafer may be transferred to station RC2. In either case, the wafer may be subjected to a first annealing process. After the first annealing, the wafer may be transferred to station RC3, where it may be subjected to a second fluidic deposition process. After the second fluidic deposition process, the wafer may be transferred to station RC2 if it was previously transferred to station RC4, or to station RC4 if it was previously transferred to station RC2. In either case, the wafer may be subjected to a second annealing process. The wafer may be returned to station RC1 to complete a single deposition-anneal cycle. The cycle may be repeated to achieve the desired film quality. Furthermore, a wafer may enter the chamber at any one of stations RC1, RC2, RC3, or RC4 and cycle through the stations in any direction. Generally, however, a deposition-anneal cycle begins with at least one flowable deposition process followed by at least one anneal process. The at least one flowable deposition process may be performed simultaneously on different wafers and / or sequentially on a single wafer. In the illustrated embodiment of FIG. 3B, the deposition station and annealing station are positioned diagonally. In some embodiments, this configuration may improve film uniformity. However, adjacent placement of stations of the same type is also within the scope of embodiments disclosed herein. In some embodiments, two or more pairs of stations perform the same process on two or more substrates in parallel.

[0034] The above concepts can be applied to any number of stations. As an example, Figure 3C shows a multi-process dual-chamber module according to some embodiments described herein. In this system, low-temperature flowable deposition and high-temperature annealing can be performed simultaneously and cyclically by continuously moving wafers between RC1 and RC2.

[0035] Thus, in some embodiments, the multi-process chamber modules described herein may include multiple stations, half of which may be used for fluidic deposition and the other half for thermal annealing. In some embodiments, the multi-process chamber modules include at least two stations, for example, at least 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 30, 40, 50, 100, 150, 200, 250, 300, 400, or 500, including ranges between any two of the listed values. However, the number of stations is not necessarily limited.

[0036] Multi-Process Chamber Module According to some embodiments herein, the multi-process chamber module herein may include two or more stations for performing fluidized deposition and annealing of the substrate. Optionally, the multi-process chamber module may also be configured to perform plasma curing. In some embodiments, the multi-process chamber module may include a dual-system gas delivery and temperature control system, such that each station can be independently heated and different gases can be simultaneously delivered to each station. In some embodiments, each station of the multi-process chamber module may include a heater for heating the station independently from other stations of the multi-process chamber module. In some embodiments, the heater may include an aluminum nitride (AlN) ceramic heater or an anodized aluminum heater. In some embodiments, the heater may include one or more heat lamps for transmitting IR radiation to the surface of the substrate.

[0037] In some embodiments, the multi-process chamber module may include an integrated single-system exhaust source and pump system, so that all stations can be simultaneously maintained at synchronized pressure. Additionally, the multi-process chamber module may include a single-system radio frequency power supply for providing radio frequency power to the stations. In some embodiments, the multi-process chamber module may include a lower chamber including a transfer space and an upper chamber including a process station. In some embodiments, the lower chamber and the upper chamber may be unsealed. However, in some embodiments, the chambers may be sealed to one another.

[0038] Some embodiments herein provide a station for deposition that is in gas communication with a precursor source so that precursors can flow into the station. An apparatus according to some embodiments herein includes a first station and a second station. The apparatus may further include a controller configured to control movement of the substrate from station to station, flow of precursors and process gases into the station, and / or purging of the station. Different process gases may contact the substrate at different temperatures appropriate for each specific precursor. In some embodiments, precursors in the station are delivered via a showerhead. Optionally, the showerhead includes a heated showerhead to provide precursors to the station at a desired temperature or temperature range. In some embodiments, the heated showerhead supplies process gases to the station at or near the temperature at which the precursors contact the substrate. Optionally, the showerhead includes a vacuum exhaust scavenger around it to capture excess precursors and minimize the amount of precursor potentially available to participate in CVD reactions with other gases. In some embodiments, precursors are contained within the station (and / or precursor source lines and / or purge lines) but are not allowed to enter any space between the stations.

[0039] According to some embodiments herein, a substrate is shuffled between two or more stations, each station performing a deposition or annealing process. For example, a first station can provide a precursor that is adsorbed onto an exposed surface of the substrate at a first temperature, and a second station can perform a thermal treatment of the substrate at a second temperature different from the first temperature. The substrate can be repeatedly shuffled back and forth between the first and second stations until a seamless gap fill without voids is formed. In some embodiments, the substrate moves continuously between the stations. In some embodiments, the movement of the substrate between the stations is not continuous, but rather includes an indexing motion, such as a stop-start motion or alternating slow motion.

[0040] In some embodiments, the substrate is moved from one station to the next in the process sequence for a time period of, for example, less than 1000 milliseconds, 900 milliseconds, 800 milliseconds, 700 milliseconds, 600 milliseconds, 500 milliseconds, 400 milliseconds, 300 milliseconds, 200 milliseconds, 175 milliseconds, 150 milliseconds, 125 milliseconds, 100 milliseconds, 75 milliseconds, 50 milliseconds, 25 milliseconds, 10 milliseconds, or 5 milliseconds, including ranges between any two of the listed values, e.g., 10-1000 milliseconds, 10-500 milliseconds, 10-400 milliseconds, 10-300 milliseconds, 10-200 milliseconds, 10- The substrate may move in less than 1000 milliseconds (e.g., travel time between a first station and a second station, not necessarily including time at a station), such as 100 milliseconds, 30-1000 milliseconds, 30-500 milliseconds, 30-400 milliseconds, 30-300 milliseconds, 30-200 milliseconds, 30-100 milliseconds, 50-1000 milliseconds, 50-500 milliseconds, 50-400 milliseconds, 50-300 milliseconds, 50-200 milliseconds, 50-100 milliseconds, 100-1000 milliseconds, 100-500 milliseconds, 100-400 milliseconds, 100-300 milliseconds, or 100-200 milliseconds. Optionally, the substrate may be shuffled between two or more stations separated by a solid material, such as a wall, rather than a gas bearing or gas curtain. Optionally, the substrate may be shuffled between stations along a circular path or arc, rather than a linear path. Optionally, the substrate is shuffled between stations along a linear path rather than an arc or circular path. It is also contemplated that, according to some embodiments herein, moving the substrate from station to station without passing through any additional locations can increase throughput by minimizing processing time. Optionally, the substrate moves directly from a first station to a second station without passing through any additional locations.

[0041] It should be noted that when two different stations include two different processes, different station conditions, e.g., different temperatures, can be maintained at the different stations. For example, a first station can be at a first temperature optimized for a first process at the first station, and a second station can be at a second temperature optimized for a second process at the second station. Thus, in some embodiments, the entire first station is at a different temperature than the entire second station. In some embodiments, the entire first station is at a different temperature than the entire second station, but the two stations are at the same pressure.

[0042] Optionally, the station may further be in gas communication with a purge gas source and / or vacuum to purge the station. For example, according to some embodiments herein, after the substrate contacts the precursor in a first station (but before the substrate moves to a second station), the station may be purged while the substrate remains in the first station to minimize or eliminate the possibility of any remaining precursor being transferred with the wafer to the second station.

[0043] Optionally, one or more stations according to some embodiments herein include a susceptor on which a substrate can be placed. The susceptor can be heated or cooled and, therefore, can be configured to heat or cool the substrate to an appropriate temperature. Thus, in some embodiments, the susceptor in a first station is heated or cooled to a first temperature, while the susceptor in a second station is heated or cooled to a second temperature. Furthermore, in some embodiments, the susceptor can heat or cool the substrate for different periods of time to allow the substrate to reach the appropriate temperature. In some embodiments, cooling and / or heating the susceptor may be necessary to maintain a large temperature difference between the deposition station and the annealing station. Optionally, the susceptor can have a lower mass than the substrate, such that the susceptor can heat or cool faster than the substrate. In other embodiments, the susceptor can have a larger mass than the substrate, such that the substrate can heat or cool faster than the susceptor. Optionally, the susceptor does not move between stations. Optionally, the susceptor includes a heated and / or cooled susceptor. In some embodiments, the susceptor is at a temperature appropriate for precursor deposition before the substrate is placed on the susceptor, hi some embodiments, the susceptor is heated to a temperature appropriate for precursor deposition after the substrate is placed on the susceptor.

[0044] A deposition station according to embodiments herein may include a gas injection system fluidly connected to the reaction space, a first gas source for introducing precursors and optionally a carrier gas (e.g., He) into the reaction space, a second gas source for introducing a mixture of one or more process gases into the reaction space, an exhaust system, and a controller configured to control gas flow to the gas injection system to perform the methods described herein. As will be appreciated by those skilled in the art, the controller is in communication with various power sources, heating systems, pumps, robots, and gas flow controllers or valves of the reactor. In some embodiments, the gas injection system includes a precursor delivery system that uses a carrier gas to carry precursors to the reaction space. In some embodiments, the controller may include a processor that provides instructions to the apparatus to control the following cycle: (a) placing a substrate in a first station; (b) contacting the substrate in the first station with a precursor at a first temperature, where contact with the precursor forms a flowable layer in gaps in the first substrate; (c) after contacting the substrate in the first station with the precursor, placing the substrate in a second station; and (d) performing annealing on the substrate by heating the first substrate to a second temperature in the second station to densify the first flowable film layer. In some embodiments, (a)-(d) are repeated in a cycle until a film of the desired thickness is deposited on the substrate.

[0045] The apparatus may further include a substrate transport system configured to place a substrate in a first station, perform a first process (e.g., flowable deposition or annealing) on ​​the substrate in the first station, and then place the substrate in a second station. The apparatus may include an intermediate space or wafer transport space. The substrate transport system may include a substrate transport member, such as a spider, configured to move the substrate within the intermediate space. In some embodiments, a movable barrier defining the stations may be moved to expose the substrate to the intermediate space, and the transport member may transport the substrate through the intermediate space to a different station, and then gas insulate the substrate via the movable barrier. In some embodiments, the substrate transport system of the apparatus includes one or more substrate transport mechanisms (e.g., movable stages), each associated with only one station and capable of transporting the substrate back and forth between that station and the intermediate space. In this manner, the transport mechanism of each station may move the substrate from a particular station to the intermediate space or from the intermediate space to the station. For example, a movable stage may raise or lower the substrate between the intermediate space and the station associated with that particular movable stage. In some embodiments, a substrate transport mechanism configured to receive a substrate, or a stage or susceptor within a station, includes multiple lift pins. When the lift pins are extended, a substrate positioned on the extended lift pins can be easily accessed by a substrate transport member (e.g., a spider) for lifting or lowering. When the lift pins are retracted, the substrate can be placed on an appropriate surface (e.g., the surface of a stage or susceptor). In the intermediate space, the substrate can be moved from one station to another or from one substrate transport mechanism (e.g., a movable stage) to another substrate transport mechanism, for example, via a rotating substrate transport member such as a spider. Optionally, each substrate transport mechanism (e.g., a movable stage) includes multiple lift pins configured to extend and lift the substrate from the substrate transport mechanism in the intermediate space. The lifted substrate can be easily lifted by a transport member such as a spider to move the substrate to a different substrate transport member within the intermediate space.Optionally, after placing the substrate on a station (eg, on a susceptor or stage) or on a substrate transport mechanism associated with the station, the substrate transport member is housed within the intermediate space.

[0046] As used herein, "substrate transport member" or "transport member" refers to a structure, such as a rotary member or spider, that can move a substrate from a first station (or from a transport mechanism associated with the first station) to a second station (or to a transfer mechanism associated with the second station). In some embodiments, a transport system includes a transport member that includes a spider. As used herein, "spider" refers to a wafer transport member having multiple arms, each arm configured to engage a wafer through a spider end effector. The spider can be centrally located relative to the multiple stations.

[0047] 4 shows a schematic diagram of a multi-process chamber module according to some embodiments described herein. In some embodiments, the multi-process chamber module can include a spider 200 centrally located relative to stations 201, 202, 203, and 204. The spider 200 can have one or more arms 205, each arm equipped with a spider end effector 206 for engaging a wafer. When a wafer needs to be transported, the wafer can be raised by lift pins or similar structures, and the spider 200 rotates so that the spider end effector 206 is below the wafer and engages the wafer. In some embodiments, spider 200 rotates 90 degrees (or a different value; for a different number of evenly distributed stations, the value can be 360 ​​degrees divided by the number of stations), and spider end effector 206 disengages the wafer, leaving the wafer resting on a surface (e.g., on a susceptor in a station described herein, or on a substrate transport mechanism), which may also include lift pins or similar structures for elevating the substrate. Spider 200 then moves to an intermediate position between stations 201, 202, 203, and 204, where neither the spider nor any of its components are exposed to reactant gases as the stations are gas-insulated from one another. Optionally, additional end effector 207 can move the wafer from one cluster of stations to a wafer handling chamber, a load lock chamber, and / or another cluster of stations. In some embodiments, wafers can be transferred in clockwise or counterclockwise rotation between stations 201, 202, 203, 204, which include either flowable deposition stations or annealing stations.

[0048] In some embodiments, the substrate transport system includes multiple "substrate transport mechanisms," each of which is associated with only one station and can transport the substrate back and forth between the particular station and the intermediate space, e.g., by being raised or lowered. Optionally, each substrate transport mechanism (e.g., a movable stage) includes multiple lift pins configured to extend to lift the substrate from the substrate transport mechanism in the intermediate space. The elevated substrate can be easily lifted by a transport member, such as a spider, to move the substrate to a different substrate transport mechanism within the intermediate space. Thus, each substrate transport mechanism is not exposed to more than one station. In some embodiments, each substrate transport mechanism includes a movable stage.

[0049] FIG. 5 shows a top-down view of a multi-process chamber module according to some embodiments described herein. Each multi-process chamber module 500 can include one or more process chambers 501, each including one or more stations 503 gas-insulated from the other stations. In some embodiments, a spider 505 can move substrates from process chamber to process chamber. An end effector positioned within a wafer handling chamber 502 (WHC) can add and remove substrates from the spider (which communicates with the process chambers) and / or the load lock chamber 504 (LLC). As described above, the multi-process chamber module can include dual heating systems including independent heating systems 506, 508. In some embodiments, the heating system 506 can heat and / or cool one or more of the stations 503 to a first temperature independently of the heating system 508. Similarly, the heating system 508 can heat and / or cool one or more other stations 503 to a second temperature, different from the first temperature, independently of the heating system 506. This configuration allows for different simultaneous processes in different stations, such as one or more deposition processes and one or more annealing processes. The multi-process chamber module 500 may also include a pressure system 510, including an exhaust and pumping system. In some embodiments, the pressure system may be connected to all stations 503 of the reaction chamber 501, so that the same chamber pressure can be maintained in all of the stations 503 of the reaction chamber 501. In some embodiments, the stations 503 are not sealed from each other, so that each process space (i.e., upper chamber) is connected through an intermediate lower chamber space. In some embodiments, this lack of station separation allows for a less complex design, a shared pressure system 510, which makes wafer processing between stations easier and faster, so that the deposition stations and annealing stations can be simultaneously maintained at the same pressure.

[0050] In some embodiments, a substrate processing apparatus is provided that includes one or more process modules (PMs) in which multiple stations are located. The stations may include process spaces connected by an intermediate space (i.e., a lower chamber). The substrate processing apparatus may include at least two substrate transport systems, one for moving substrates between a load lock chamber (LLC) and the PM, and another for moving substrates between process stations in the PM. Optionally, the PM has the ability to simultaneously perform at least two different processes within the stations connected by the open intermediate space by independently controlling some process conditions, such as gases and temperature, but sharing control of other process conditions, such as pressure and RF.

[0051] In some embodiments, each station of the multi-process chamber module may include a heater for heating the station independently of other stations of the multi-process chamber module, hi some embodiments, the heater may include an aluminum nitride (AlN) ceramic heater, an anodized aluminum heater, and / or one or more heat lamps.

[0052] FIG. 6A shows an exemplary diagram of a heating unit for use in a fluidic deposition station according to some embodiments herein. The heating unit 600 may include one or more heating elements 602, 604 for first and second heating zones, respectively. The heating elements may be located on or within the heating unit 600, which may be part of a susceptor for holding a substrate in a station of a multi-process chamber module. The heating elements may be powered to raise the temperature of the susceptor, substrate, and / or station to a temperature suitable for fluidic deposition. The heating unit 600 may also include liquid cooling lines 606 for cooling the susceptor, substrate, and / or station. Thermal isolation grooves 608 may be provided to improve heating and / or cooling efficiency. For example, in some embodiments, the thermal isolation grooves may separate the first and second heating zones to provide uniform heating to the wafer. In some embodiments, the heating unit may be configured to heat the susceptor, substrate, and / or station to a temperature between about 20° C. and about 200° C. In some embodiments, the use of two heating zones effectively prevents undesirable wafer temperature increases due to plasma heating or wall temperature effects.

[0053] 6B shows an exemplary diagram of a heating unit for use in an annealing station according to some embodiments herein. The heating unit 610 may include one or more heating elements 612 in a single heating zone. In some embodiments, the heating unit may be configured to heat the susceptor, substrate, and / or station to a temperature of about 400°C to about 600°C.

[0054] Gap Filling Method Various embodiments of the present disclosure relate to gap-filling methods, structures and devices formed using the methods, and apparatus for performing the methods and / or forming the structures and / or devices. Some embodiments relate to depositing a flowable material in a deposition station and performing a thermal treatment in a second station. In some embodiments, the deposition process includes introducing a substrate having a gap into the deposition station, the gap including a recess and a lateral space extending substantially back from the recess, and introducing precursors into the deposition station and introducing a plasma into the deposition station, whereby the precursors react to form a gap-filling fluid that at least partially fills the recess and the lateral space of the gap. In some embodiments, the deposition further includes introducing one or more process gases into the deposition station in addition to the precursor. In some embodiments, other gas-phase processes can be used to deposit the flowable material.

[0055] In some embodiments, the filling capability can be achieved by forming a viscous material in the gas phase, for example, by impinging a plasma into a chamber filled with a volatile precursor that can be polymerized within a specific parameter range. Optionally, the gas phase includes an additional gas other than the plasma, such as a noble gas or H2. Process parameters can include, for example, the partial pressure of the precursor and the wafer temperature during plasma impingement. As used herein, polymerization can include the formation of longer molecules and not necessarily carbon-carbon bonds. Indeed, polymerization can include, for example, the formation of Si-Si, Si-C, and / or Si-N bonds. In some embodiments, the viscous material can form a viscous phase and flow into a trench on a substrate. A suitable substrate includes a silicon wafer. As a result, the viscous material seamlessly fills the trench from the bottom up. Examples of precursors within the scope of embodiments herein include alkyl-silazane (Si, C, N, H containing) or aminosilane / silylamine (Si, N, H containing) precursors, including, for example, hexamethylcyclotrisilazane (HMCTS) for SiCN flowable deposition, and aminosilane and trisilylamine (TSA) for SiN deposition. In some embodiments, the precursor may be selected from the list consisting of silazanes, cyclosilazanes, and silicon alkylamines.

[0056] Flowable films are temporarily obtained when volatile precursors are polymerized by plasma and deposited on the surface of a substrate; the gaseous precursors (e.g., monomers) are activated or fragmented by energy provided by the plasma gas discharge to initiate polymerization, and the resulting material exhibits temporary flowable behavior when deposited on the surface of the substrate. The film quality of the material deposited on the surface can be improved through cyclic processes, including heat treatments, as described herein.

[0057] In some embodiments, volatile precursors are polymerized within a specific parameter range, which is mainly defined by the partial pressure of the precursor during plasma impingement, the wafer temperature, and the total pressure in the reaction chamber. To adjust the "precursor partial pressure," an indirect process knob (dilution gas flow) can be used to control the precursor partial pressure. The absolute value of the precursor partial pressure is not necessarily required to control the flow rate of the deposited film; instead, the ratio of the precursor flow rate to the residual gas flow rate at a reference temperature and the total pressure of the reaction space can be used as practical control parameters.

[0058] The gap in the substrate may refer to a patterned recess or trench in the substrate. Thus, an example of a method for filling a patterned recess or trench on a substrate includes providing a substrate including the recess / trench in a reaction space, providing a precursor to the reaction space to thereby fill the recess with the precursor, and supplying a plasma to form a viscous phase of the precursor in the recess, wherein the viscous phase of the precursor flows and deposits or forms a deposition material against the sidewalls, at the bottom of the recess, and / or on the top of the substrate away from the recess.

[0059] In some embodiments, the gap-fill deposition method includes the use of a radio frequency (RF) plasma and a pulsed precursor flow. In some embodiments, process parameters can be varied to achieve a sufficiently high partial pressure during the entire RF-on period during which polymerization proceeds and provide enough energy (defined by the RF-on duration and RF power) to activate the reaction. In some embodiments, the temperature and pressure can be controlled for polymerization / chain growth and set above the melting point and below the boiling point of the flowable phase. In some embodiments, the process of filling the gap with the gap-fill fluid includes one or more of the following substeps: A substrate including a gap is positioned within a deposition station. The gap includes a recess in fluid communication with one or more lateral spaces. In some embodiments, the precursor can be introduced into the deposition station. In some embodiments, one or more process gases can also be introduced into the deposition station. The process gas can include one or more additional gases, including co-reactants. In some embodiments, a plasma, such as an RF plasma, can be maintained within the deposition station. In some embodiments, the precursor can be reacted to form a gap-fill fluid on the substrate. In some embodiments, the gap-fill fluid can at least partially fill the multiple recesses and one or more lateral spaces. In some embodiments, the process gas and precursor may be introduced simultaneously. In some embodiments, the precursor may be introduced before or after the process gas. In some embodiments, the RF plasma may be maintained before, during, or after the introduction of the precursor and / or process gas. It will be understood by those skilled in the art that when the above-described method is performed sequentially, i.e., periodically, a small amount of material may be deposited in each cycle, and the sequence of steps may be repeated until a layer of the desired thickness is obtained. In some embodiments, the process is performed periodically, with one or more steps separated by purge gas pulses.

[0060] In some embodiments, the method includes intermittently supplying precursors to the deposition station and continuously applying a plasma. In some embodiments, the method includes intermittently supplying precursors to the deposition station and continuously applying a plasma. Thus, the latter embodiment is characterized by the sequential application of precursor pulses and plasma pulses to the reaction space.

[0061] In some embodiments, the process gas may be, for example, Ar, He, N 2、 H 2、 The precursor gas may include NH3, O2, or a combination of one or more of the above. In some embodiments, the precursor may be introduced only into the deposition station. In other words, the deposition station and the annealing station may include separate precursor gas connections.

[0062] Without being bound by theory or any particular mode of operation, it is believed that the deposition material should desirably remain viscous or liquid throughout the deposition process and should not readily solidify or evaporate. It is further believed that under desired reaction conditions, the vapor pressure of the liquid phase, rather than the vapor pressure of the precursor, should be lower than the total station pressure. Thus, it is believed that the station temperature and pressure should be maintained under conditions in which the flowable reaction product exists as a liquid and the precursor exists as a gas.

[0063] In some embodiments, the station pressure can be maintained at a pressure between about 300 Pa and 2800 Pa. For example, the station pressure can be about 300 Pa, about 350 Pa, about 400 Pa, about 450 Pa, about 500 Pa, about 550 Pa, about 600 Pa, about 650 Pa, about 700 Pa, about 750 Pa, about 800 Pa, about 850 Pa, about 900 Pa, about 950 Pa, about 1000 Pa, about 1050 Pa, about 1100 Pa, about 1150 Pa, about 1200 Pa, about 1250 Pa, about 1300 Pa, about 1350 Pa, about 1400 Pa, about 1450 Pa, about 1500 Pa, about 1550 Pa, about 1600 Pa, about The pressure may be maintained at 1650 Pa, about 1700 Pa, about 1750 Pa, about 1800 Pa, about 1850 Pa, about 1900 Pa, about 1950 Pa, about 2000 Pa, about 2050 Pa, about 2100 Pa, about 2150 Pa, about 2200 Pa, about 2250 Pa, about 2300 Pa, about 2350 Pa, about 2400 Pa, about 2450 Pa, about 2500 Pa, about 2550 Pa, about 2600 Pa, about 2650 Pa, about 2700 Pa, about 2750 Pa, about 2800 Pa, or any value between the aforementioned values.

[0064] In some embodiments, the deposition station temperature can be maintained at a temperature below about 300° C. For example, the station temperature can be maintained at about 50° C., about 55° C., about 60° C., about 65° C., about 70° C., about 75° C., about 80° C., about 85° C., about 90° C., about 95° C., about 100° C., about 105° C., about 110° C., about 115° C., about 120° C., about 125° C., about 130° C., about 135° C., about 140° C., about 145° C., about 150° C., about 155° C., about 160° C., about 165° C., about 170° C., about 175° C., about The temperature may be maintained at 180°C, about 185°C, about 190°C, about 195°C, about 200°C, about 205°C, about 210°C, about 215°C, about 220°C, about 225°C, about 230°C, about 235°C, about 240°C, about 245°C, about 250°C, about 255°C, about 260°C, about 265°C, about 270°C, about 275°C, about 280°C, about 285°C, about 290°C, about 295°C, about 300°C, or any value between the aforementioned values.

[0065] In some embodiments, RF power can be supplied to the station at between about 20 W and 1000 W. For example, in some embodiments, RF power can be between about 20 W, about 40 W, about 60 W, about 80 W, about 100 W, about 120 W, about 140 W, about 160 W, about 180 W, about 200 W, about 220 W, about 240 W, about 260 W, about 280 W, about 300 W, about 320 W, about 340 W, about 360 W, about 380 W, about 400 W, about 420 W, about 440 W, about 460 W, about 480 W, about 500 W, about 520 W, about The station may be supplied with 540W, about 560W, about 580W, about 600W, about 620W, about 640W, about 660W, about 680W, about 700W, about 720W, about 740W, about 760W, about 780W, about 800W, about 820W, about 840W, about 860W, about 880W, about 900W, about 920W, about 940W, about 960W, about 980W, about 1000W, or any value between the aforementioned values.

[0066] In some embodiments, a film having a thickness of at least about 1 nm per cycle is deposited, e.g., about 1 nm, about 2 nm, about 3 nm, about 4 nm, about 5 nm, about 6 nm, about 7 nm, about 8 nm, about 9 nm, about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, about 35 nm, about 40 nm, about 45 nm, about 50 nm, about 60 nm, about 70 nm, about 80 nm, about 90 nm, or about 100 nm, including ranges between any two of the listed values, e.g., 1 nm to 100 nm, 1 nm to 20 nm, 1 nm to 10 nm, 1 nm to 5 nm, 2 nm to 100 nm, 2 nm to 20 nm, 2 nm to 10 nm, 2 nm to 5 nm, 3 to 4 nm, 5 nm to 100 nm, 5 nm to 20 nm, 5 nm to 10 nm, 10 nm to 100 nm, or 10 nm to 20 nm.

[0067] The precursor and process gases can be provided to the stations at a volumetric flow rate of about 0.1 standard liters per minute (SLM) to about 10 SLM. For example, the precursor and process gases can be provided at a volumetric flow rate of about 0.1 SLM, 0.5 SLM, about 1 SLM, about 1.5 SLM, about 2 SLM, about 2.5 SLM, about 3 SLM, about 3.5 SLM, about 4 SLM, about 4.5 SLM, about 5 SLM, about 5.5 SLM, about 6 SLM, about 6.5 SLM, about 7 SLM, about 7.5 SLM, about 8 SLM, about 8.5 SLM, about 9 SLM, about 9.5 SLM, about 10 SLM, about 10.5 SLM, or about 11 SLM. , about 11.5 SLM, about 12 SLM, about 12.5 SLM, about 13 SLM, about 13.5 SLM, about 14 SLM, about 14.5 SLM, about 15 SLM, about 15.5 SLM, about 16 SLM, about 16.5 SLM, about 17 SLM, about 17.5 SLM, about 18 SLM, about 18.5 SLM, about 19 SLM, about 19.5 SLM, about 20 SLM, or any value between the aforementioned values.

[0068] In some embodiments, the substrate comprises a semiconductor. In some embodiments, the semiconductor comprises silicon. Further provided herein is a structure comprising a semiconductor substrate comprising a plurality of recesses. The plurality of recesses are fluidly connected to one or more lateral spaces. Also, the plurality of recesses and the one or more lateral spaces are at least partially filled with a gap-filling fluid upon completion of one or more deposition cycles. In some embodiments, the gap-filling fluid completely fills at least 90%, preferably at least 95%, more preferably at least 99%, and most preferably all of the plurality of recesses. In some embodiments, the gap-filling fluid completely fills at least 90%, preferably at least 95%, more preferably at least 99%, and most preferably all of the lateral spaces. In other words, it is preferred that the gap-filling fluid completely fill each lateral space filled with the gap-filling fluid. In some embodiments, the gap-filling fluid is substantially free of voids or seams.

[0069] In some embodiments, after deposition and / or thermal cyclic annealing, the substrate may be subjected to an NF3 and O2 cleaning process. In some embodiments, a plasma curing step may also be used to further improve the gap fill film quality. In some embodiments, the curing step may employ continuous direct plasma. The gap fill fluid deposition and direct plasma curing may be performed cyclically. In some embodiments, this allows for efficient curing of all, or at least a majority, of the gap fill fluid. In some embodiments, the curing step may involve the use of micropulse plasma. In some embodiments, the plasma curing step may be performed cyclically, i.e., employing alternating cycles of gap fill fluid deposition and micropulse RF plasma, although a post-deposition microplasma curing treatment is also possible. The application of cyclic gap fill fluid deposition and plasma steps allows for efficient curing of all, or at least a majority, of the gap fill fluid.

[0070] In some embodiments, the cyclic gap-fill process may include performing a deposition step in a deposition station, performing a thermal annealing step in an annealing station, and optionally repeating the deposition and thermal steps until a film of desired thickness and quality is formed on the substrate. The deposition-annealing cycle may be performed n times, where n is an integer. In some embodiments, after one example of the flowable deposition step and optional curing step is completed, the wafer may be transferred to another annealing station, where the wafer may be subjected to a thermal annealing step. The thermal treatment provided by the annealing station may, for example, improve the flowable film quality of the SiCN / SiN film. In some embodiments, the cyclic annealing may include a thermal treatment including a thermal cure using He, Ar, N2, H2, or O2, NH3, H2O2, or any combination of the foregoing, followed by a wafer cleaning process using NF3 and O2. During the cyclic annealing, the wafer may be heated to a temperature of about 80°C to about 650°C. For example, the wafer may be heated to about 80°C, about 90°C, about 100°C, about 110°C, about 120°C, about 130°C, about 140°C, about 150°C, about 160°C, about 170°C, about 180°C, about 190°C, about 200°C, about 210°C, about 220°C, about 230°C, about 240°C, about 250°C, about 260°C, about 270°C, about 280°C, about 290°C, 300°C, about 310°C, about 320°C, about 330°C, about 340°C, about 350°C, about 360°C, about 370°C, about 380°C The deposition chamber may be heated to a temperature of about 390°C, about 400°C, about 410°C, about 420°C, about 430°C, about 440°C, about 450°C, about 460°C, about 470°C, about 480°C, about 490°C, about 500°C, about 510°C, about 520°C, about 530°C, about 540°C, about 550°C, about 560°C, about 570°C, about 580°C, about 590°C, about 600°C, about 610°C, about 620°C, about 630°C, about 640°C, about 650°C, or any value between the aforementioned values. Deposition and annealing can be carried out simultaneously using similar pressure and gas conditions as in the deposition chamber.

[0071] 7A-7C illustrate exemplary embodiments of a gap-fill method using sequential application of precursor and plasma pulses. FIG. 7A illustrates an example of a gap-fill method using repeated cycles of deposition, such as ALD, and annealing, according to some embodiments herein. The process may employ one or more process gases, including precursors and co-reactants. The one or more process gases may be continuously supplied to the reactor chamber at a constant flow rate. Precursor pulses and RF pulses may be sequentially applied to the deposition station. The deposition station may be maintained at a constant pressure and temperature during gap-fill deposition. After completion of the deposition process, the wafer may be transferred to an anneal station and subjected to an annealing process. In some embodiments, one or more process gases are sequentially provided to the anneal station while the annealing pressure and annealing temperature are maintained. In some embodiments, the process gas used in the anneal station may be, for example, Ar, O, or the like. 2、 H2, N2, NH 3、 The gases may include He, HO, HO, and / or any combination thereof. Optionally, RF power is provided to the annealing station continuously or in pulses during the annealing period. The ALD deposition-anneal cycle may be repeated any number of times to achieve the desired film quality. In some embodiments, the ALD process and the annealing process may be used simultaneously, with the ALD process being performed on a first substrate while the annealing process is performed on a second substrate. For example, in the dual-chamber module of FIG. 3C, the first and second substrates may be repeatedly swapped between RC1 and RC2 until the desired film quality is achieved on both substrates.

[0072] FIG. 7B illustrates an example of a gap-fill method using repeated cycles of a deposition process, such as CVD, and annealing, according to some embodiments herein. In contrast to ALD processes, for CVD, precursors and RF power may be applied simultaneously. The annealing process may be substantially similar to that employed after an ALD process. The ALD deposition-annealing cycle may be repeated any number of times to achieve the desired film quality. In some embodiments, the CVD and annealing processes may be used simultaneously, with the CVD process occurring on a first substrate while the annealing process occurs on a second substrate. In some embodiments, the annealing process may be performed intermittently, such as every 1 nm to 5 nm of deposition film thickness, or every 5 nm to 50 nm of deposition film thickness.

[0073] FIG. 7C illustrates an example of a gap-fill method using repeated cycles of ALD and annealing with plasma curing, according to some embodiments herein. Like the ALD process of FIG. 7A, precursor pulses and RF pulses may be applied sequentially. However, after the deposition process is complete, a plasma curing process may be employed, as discussed herein. In some embodiments, plasma curing may be used in a deposition station. In other embodiments, plasma curing may be used in an annealing station. In some embodiments, plasma curing may occur after an annealing step or rapid thermal anneal. For example, in some embodiments, the annealing or rapid thermal annealing may outgas one or more gases from the flowable film, and the plasma curing may create additional bonds in the remaining film. In some embodiments, plasma curing involves sequentially supplying one or more process gases to the station and RF pulses. In some embodiments, the station pressure may be lowered or raised relative to the pressure during the deposition-annealing process during plasma curing. Furthermore, the process gases flowing into the station during the deposition-annealing process may differ from the process gases flowing into the station during plasma curing.

[0074] Rapid Thermal Annealing (RTA) In some embodiments, the temperature difference between gap fill stations within the multi-process chamber modules described herein can be significant. For example, the flowable deposition station can be maintained at less than 300°C, and the cyclic annealing station can be maintained at approximately 450°C. In some embodiments, this can require complex hardware designs. Furthermore, in some embodiments, process times can be extended because the entire wafer must be heated and cooled for each processing step.

[0075] In some embodiments, the use of cyclic rapid thermal annealing (RTA) can be used as an alternative to the use of thermal treatment, as described above. In this case, the wafer is rapidly heated by exposure to infrared (IR) radiation, which can harden the gap fill material and improve its properties and quality. The RTA exposure time can be in the range of about 0.1 seconds to about 10 seconds, allowing relatively high temperatures to be used when only the top surface of the wafer is heated. For example, in some embodiments, the RTA exposure time can be about 0.1 seconds, about 0.2 seconds, about 0.3 seconds, about 0.4 seconds, about 0.5 seconds, about 0.6 seconds, about 0.7 seconds, about 0.8 seconds, about 0.9 seconds, about 1 second, about 1.1 seconds, about 1.2 seconds, about 1.3 seconds, about 1.4 seconds, about 1.5 seconds, about 1.6 seconds, about 1.7 seconds, about 1.8 seconds, about 1.9 seconds, about 2 seconds, about 2.1 seconds, about 2.2 seconds, or about 2.3 seconds. , about 2.4 seconds, about 2.5 seconds, about 2.6 seconds, about 2.7 seconds, about 2.8 seconds, about 2.9 seconds, about 3 seconds, about 3.1 seconds, about 3.2 seconds, about 3.3 seconds, about 3.4 seconds, about 3.5 seconds, about 3.6 seconds, about 3 .7 seconds, about 3.8 seconds, about 3.9 seconds, about 4 seconds, about 4.1 seconds, about 4.2 seconds, about 4.3 seconds, about 4.4 seconds, about 4.5 seconds, about 4.6 seconds, about 4.7 seconds, about 4.8 seconds, about 4.9 seconds, about 5 seconds, about 5.1 seconds, 5.2 seconds, 5.3 seconds, 5.4 seconds, 5.5 seconds, 5.6 seconds, 5.7 seconds, 5.8 seconds, 5.9 seconds, 6 seconds, 6.1 seconds, 6.2 seconds, 6.3 seconds, 6.4 seconds, about 6.5 seconds, about 6.6 seconds, about 6.7 seconds, about 6.8 seconds, about 6.9 seconds, about 7 seconds, about 7.1 seconds, about 7.2 seconds, about 7.3 seconds, about 7.4 seconds, about 7.5 seconds, about 7.6 seconds, about 7.7 seconds, about The time may be 7.8 seconds, about 7.9 seconds, about 8 seconds, about 8.1 seconds, about 8.2 seconds, about 8.3 seconds, about 8.4 seconds, about 8.5 seconds, about 8.6 seconds, about 8.7 seconds, about 8.8 seconds, about 8.9 seconds, about 9 seconds, about 9.1 seconds, about 9.2 seconds, about 9.3 seconds, about 9.4 seconds, about 9.5 seconds, about 9.6 seconds, about 9.7 seconds, about 9.8 seconds, about 9.9 seconds, about 10 seconds, or any value between any of the aforementioned values.

[0076] In some embodiments, the RTA may be performed at a relatively higher temperature than the heat treatment / annealing described above, for example, in some embodiments, the RTA may be performed at a temperature of about 80°C to about 1000°C. In some embodiments, RTA may be carried out at about 80°C, about 105°C, about 130°C, about 155°C, about 180°C, about 205°C, about 230°C, about 255°C, about 280°C, 300°C, about 325°C, about 350°C, about 375°C, about 400°C, about 425°C, about 450°C, about 475°C, about 500°C, about 525°C, about 550°C, about 575°C, about 600°C, about 625°C, about 650°C, about 675°C, about 700°C, about 725°C, about 750°C, about 775°C, about 800°C, about 825°C, about 850°C, about 875°C, about 900°C, about 925°C, about 950°C, about 975°C, about 1000°C, or any value between the aforementioned values. In some embodiments, a high temperature RTA may correspond to a lower exposure time.

[0077] Thus, in some embodiments herein, cyclic RTA may be utilized to cure the flowable gap fill, which may improve throughput compared to cyclic thermal processing while preventing redeposition, a challenge in cyclic plasma processing.

[0078] In some embodiments, in contrast to the multi-process chamber module apparatus and methods described above, during RTA, the substrate stage in the anneal station can be kept at the same temperature as the substrate stage in the deposition station, avoiding temperature gaps between processes. Like cyclic annealing, RTA with IR heating can be provided in a separate chamber for flowable deposition, which requires wafer movement during each deposition-anneal cycle. However, in some embodiments, RTA can be incorporated into the deposition station itself to improve throughput. In some embodiments, using a single station can improve throughput and reduce equipment size. However, in some embodiments, using a multi-station apparatus may be preferable if the process gases or desired process parameters (e.g., pressure) differ between the deposition station and the thermal treatment.

[0079] In some embodiments, the deposition-RTA cycle may be repeated m times, where m is an integer. The value of m may depend on various process variables, including the growth rate of the flowable deposition process, the volume of the gap structure to be filled, and whether an optional plasma curing is performed. For example, in some embodiments, if a plasma curing is performed, an RTA may be provided every about 1 nm to about 5 nm of film growth. In some embodiments, if a plasma curing is not performed, an RTA may be provided every about 5 nm to about 50 nm of film growth.

[0080] As mentioned above, RTA essentially heats only the top surface of the wafer. Therefore, temperature gaps between stations are not required, as they are in a multi-process chamber module that performs flowable deposition and cyclic annealing. Furthermore, heating and cooling in RTA can be accelerated relative to cyclic annealing. The RTA approach avoids the redeposition effect observed in cyclic plasma processing and improves throughput compared to cyclic thermal processing.

[0081] FIG. 8 illustrates an example of a gap-filling method using rapid thermal annealing (RTA) according to some embodiments herein. As shown, a substrate may be subjected to a flowable deposition process that includes flowing one or more precursors and applying a plasma in a pulsed manner to a station holding the substrate. The one or more precursors may form a flowable film that may be deposited into gaps present on the substrate. After deposition, the RTA process may be performed in the same station where the flowable deposition process was completed or in a separate station. The RTA may include increasing the temperature of the top surface of the substrate for an exposure time of approximately 0.1 seconds to 10 seconds. In some embodiments, a heat lamp, such as an infrared lamp, may be used to heat the top surface of the substrate. The RTA may also include cooling the top surface of the substrate for approximately 1 minute. The RTA may densify the deposited film while avoiding plasma redeposition of outgassed species. The flowable deposition process and RTA may be repeated any number of times in a deposition-RTA cycle to form a film of desired thickness and quality.

[0082] Additional Embodiments In the foregoing specification, the invention has been described with reference to specific embodiments thereof. It will, however, be apparent that various modifications and changes can be made thereto without departing from the broader spirit and scope of the invention. The specification and drawings are, therefore, to be regarded in an illustrative rather than a restrictive sense.

[0083] Indeed, while the present invention has been disclosed in the context of certain embodiments and examples, those skilled in the art will recognize that the invention extends beyond the specifically disclosed embodiments to other alternative embodiments and / or uses of the invention and obvious variations and equivalents thereof. In addition, while several variations of the embodiments of the present invention have been shown and described in detail, other modifications that are within the scope of the invention will be readily apparent to those skilled in the art based on this disclosure. It is also contemplated that various combinations or subcombinations of specific features and aspects of the embodiments can be made and still fall within the scope of the invention. It should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for one another to form varying modes of the disclosed embodiments of the invention. Any methods disclosed herein need not be performed in the order recited. Therefore, it is intended that the scope of the invention disclosed herein should not be limited by the specific embodiments described above.

[0084] Indeed, it will be understood that the systems and methods of the present disclosure each have several innovative aspects, no single aspect of which is solely responsible for or required for the desirable attributes disclosed herein. The various features and processes described above can be used independently of one another or can be combined in various ways. All possible combinations and subcombinations are intended to be within the scope of the present disclosure.

[0085] Certain features described in this specification in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented in multiple embodiments separately or in any suitable subcombination. Furthermore, while features may be described above as functioning in a particular combination and initially claimed as such, one or more features from the claimed combination may optionally be deleted from the combination, and the claimed combination may be directed to a subcombination or a variation of the subcombination. No single feature or group of features is necessary or essential to every embodiment.

[0086] It will also be understood that conditional language used herein, such as, among others, "can," "could," "might," "may," "for example," and the like, is generally intended to convey that certain embodiments include certain features, elements, and / or steps, while other embodiments do not, unless otherwise indicated or understood within the context of use. Thus, such conditional language is not generally intended to suggest that features, elements, and / or steps are somehow required in one or more embodiments, or that one or more embodiments necessarily include logic for determining whether those features, elements, and / or steps are included in or performed in any particular embodiment, with or without author input or direction. The terms "comprise," "include," "have," and the like are synonymous and are used in an inclusive, open-ended manner and do not exclude additional elements, features, steps, operations, etc. Additionally, the term "or" is used in an inclusive sense (and not an exclusive sense), so that, for example, when used to connect a list of elements, the term "or" may refer to one, some, or all of the elements in the list. Furthermore, the articles "a," "an," and "the," as used in this application and the appended claims, should be construed to mean "one or more" or "at least one," unless otherwise specified. Similarly, while operations may be depicted in the figures in a particular order, it should be recognized that such operations need not be performed in the particular order or sequential order shown, or that all illustrated operations be performed to achieve a desired result. Furthermore, the figures may generally depict another exemplary process in the form of a flowchart. However, other operations not shown may be incorporated into the generally illustrated exemplary methods and processes. For example, one or more additional operations may be performed before, after, simultaneously with, or between any of the illustrated operations. Furthermore, operations may be rearranged or reordered in alternative embodiments. Multitasking and parallel processing may be advantageous in certain situations.Furthermore, the separation of various system components in the above embodiments should not be understood as requiring such separation in all embodiments, and it will be appreciated that the described program components and systems may generally be integrated together in a single software product or packaged in multiple software products. Furthermore, other embodiments are within the scope of the following claims. In some cases, the steps recited in the claims may be performed in a different order to achieve still more desirable results.

[0087] Furthermore, while the methods and devices described herein may be susceptible to various modifications and alternative forms, specific examples thereof are shown in the drawings and described in detail herein. However, the present invention is not limited to the particular forms or methods disclosed, but rather, it should be understood that the present invention covers all modifications, equivalents, and alternatives falling within the spirit and scope of the various described embodiments and the appended claims. Furthermore, the disclosure herein of any particular feature, aspect, method, characteristic, feature, quality, attribute, element, etc., in connection with an implementation or embodiment may be used with all other implementations or embodiments described herein. Any method disclosed herein need not be performed in the order listed. Methods disclosed herein may include specific actions taken by the practitioner, but the method may also include, either explicitly or implicitly, any third-party instructions for those actions. Ranges disclosed herein also encompass any and all overlaps, subranges, and combinations thereof. Terms such as "up to," "at least," "greater than or equal to," "less than or equal to," "between," and the like, include the recited numbers. Numbers preceded by terms such as "about" or "approximately" are inclusive of the recited numbers and should be interpreted in accordance with the context (e.g., as precisely as reasonably possible under the circumstances, e.g., ±5%, ±10%, ±15%, etc.). For example, "about 3.5 mm" includes "3.5 mm." Phrases preceded by terms such as "substantially" are inclusive of the recited numbers and should be interpreted in accordance with the context (e.g., as precisely as reasonably possible under the circumstances). For example, "substantially constant" includes "steady." Unless otherwise stated, all measurements are at standard conditions, including temperature and pressure.

[0088] As used herein, a phrase referring to "at least one" of a list of items refers to any combination of those items, including single members. By way of example, "at least one of A, B, or C" is intended to include A, B, C, A and B, A and C, B and C, and A, B, and C. Conjunctional language, such as the phrase "at least one of X, Y, and Z," is understood in the context in which it is generally used to convey that an item, term, etc. may be at least one of X, Y, or Z, unless specifically stated otherwise. Thus, such conjunctive language is not generally intended to suggest that a particular embodiment requires the presence of at least one of X, at least one of Y, and at least one of Z. Headings, if any, provided herein are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.

[0089] Thus, the scope of the claims is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the present disclosure and the principles and features disclosed herein. [Explanation of symbols]

[0090] 200 Spider Station 201 Station 202 Station 203 204 Station 205 Arm 206 Spider End Effector 207 End Effector 500 Multi-Process Chamber Module 501 Process Chamber 502 Wafer Handling Chamber Station 503 504 Load Lock Chamber 505 Spider 506 Heating System 508 Heating System 510 Shared Pressure System 600 Heating Unit 602 Heating Element 604 Heating Element 606 Liquid Cooling Line 608 Thermal isolation groove 610 Heating Unit 612 Heating Element

Claims

1. 1. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate at a first station; (b) depositing a flowable material onto the substrate in the first station by a vapor deposition process at a first temperature, wherein the first temperature is less than 300°C; (c) depositing the flowable material onto the substrate and then placing the substrate at a second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, the second temperature being between 80°C and 1000°C; and repeating steps (a) through (d) in cycles until a film of desired thickness is deposited on the substrate; The method, wherein the cycle further comprises plasma curing the substrate after step (d), wherein the plasma curing comprises a micropulse radio frequency (RF) plasma at the second station.

2. The method of claim 1 , wherein the flowable material is formed by an alkyl-silazane or aminosilane precursor.

3. The method of claim 1 , wherein the thermal treatment comprises a rapid thermal anneal (RTA).

4. The method of claim 3 , wherein the RTA comprises heating the surface of the substrate to the second temperature for less than 10 seconds.

5. The method of claim 4, wherein the second temperature is between 800°C and 1000°C.

6. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate at a first station; (b) depositing a flowable material onto the substrate in the first station by a vapor deposition process at a first temperature, wherein the first temperature is less than 300°C; (c) depositing the flowable material onto the substrate and then placing the substrate at a second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, the second temperature being between 80°C and 1000°C; and repeating steps (a) through (d) in cycles until a film of desired thickness is deposited on the substrate; The method, wherein the first station comprises an upper chamber and a lower chamber, the lower chamber comprising a shared intermediate space between the first station and the second station.

7. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate at a first station; (b) depositing a flowable material onto the substrate in the first station by a vapor deposition process at a first temperature, wherein the first temperature is less than 300°C; (c) depositing the flowable material onto the substrate and then placing the substrate at a second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, the second temperature being between 80°C and 1000°C; and repeating steps (a) through (d) in cycles until a film of desired thickness is deposited on the substrate; The method, wherein the first station and the second station comprise a shared pressure system such that the first station and the second station are maintained at a common pressure during the cycle.

8. 8. The method of claim 7, wherein the common pressure during the cycle is between 300 Pa and 2800 Pa.

9. 10. The method of claim 1, wherein the first station comprises a first station heating unit configured to control the temperature of the first station independently from the temperature of the second station, and the second station comprises a second station heating unit configured to control the temperature of the second station independently from the temperature of the first station.

10. The method of claim 1 , wherein the film comprises a SiNH or SiCNH film.

11. 10. The method of claim 1, wherein the film fills at least 90% of the gaps on the surface of the substrate, at least 95% of the gaps on the surface of the substrate, at least 99% of the gaps on the surface of the substrate, or at least 99.5% of the gaps on the surface of the substrate.

12. The method of claim 1 , wherein the substrate comprises silicon or germanium.

13. The method further includes introducing one or more process gases into the first station while contacting the substrate at the first station, the process gases being selected from the group consisting of Ar, He, N ２ , H ２ , N.H. ３ , O ２ or a combination of one or more of the above.

14. The method of claim 1 , wherein the precursor comprises an alkyl-silazane or aminosilane, hexamethylcyclotrisilazane (HMCTS), or trisilylamine (TSA).

15. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate at a first station; (b) depositing a flowable material onto the substrate in the first station by a vapor deposition process at a first temperature, wherein the first temperature is less than 300°C; (c) depositing the flowable material onto the substrate and then placing the substrate at a second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, the second temperature being between 80°C and 1000°C; and repeating steps (a) through (d) in cycles until a film of desired thickness is deposited on the substrate; the cycle further comprises plasma curing the substrate after step (b) or (d), wherein the plasma curing comprises a micropulse radio frequency (RF) plasma at the first station or the second station; The method wherein the substrate is plasma hardened at the second station after the substrate is annealed at the second station.

16. 1. A semiconductor processing apparatus, comprising: One or more process chambers, each process chamber comprising two or more stations, each station comprising an upper compartment and a lower compartment; the upper compartment is configured to contain the substrate during processing of the substrate; one or more process chambers, wherein the lower compartment comprises a shared intermediate space between the two or more stations; a first transport system configured to move the substrate from a first process chamber to a second process chamber within a wafer handling chamber; a second transport system configured to move the substrate from a first station to a second station within a shared intermediate space of the process chamber; a first heating unit configured to control the first station temperature independently of the second station temperature; a pressure system including a pump and an exhaust configured to maintain a common process chamber pressure at the two or more stations; and The device is cycled as follows: (a) placing a substrate at a first station; (b) depositing a flowable material onto the substrate in the first station by a vapor deposition process at a first temperature, wherein the first temperature is less than 300° C.; (c) depositing the flowable material onto the substrate and then placing the substrate at the second station; (d) performing a heat treatment on the substrate by heating a surface of the substrate to a second temperature in the second station, the second temperature being between 80°C and 650°C; and (a) to (d) are repeated in a cycle until a film of a desired thickness is deposited on the substrate.

17. 17. The system of claim 16, wherein the heat treatment is performed for every 1 nm to 5 nm of deposited film thickness, or every 5 nm to 50 nm of deposited film thickness.

18. 1. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate in a first station, the first station comprising an upper chamber and a lower chamber, the lower chamber comprising a shared intermediate space between the first station, the second station, the third station, and the fourth station; (b) contacting the substrate at the first station with a precursor at a first temperature, wherein contacting with the precursor forms a first flowable film layer within the gap of the substrate; (c) contacting the substrate at the first station with the precursor and then placing the substrate at the second station; (d) performing a first anneal on the substrate by heating the substrate to a second temperature at the second station to densify the first flowable film layer; (e) performing the first anneal on the substrate, followed by placing the substrate in the third station; (f) contacting the substrate at the third station with the precursor at the first temperature, wherein contacting with the precursor forms a second flowable film layer in the gap of the substrate; (g) contacting the substrate with the precursor at the third station and then placing the substrate at the fourth station; (h) performing a second anneal on the substrate by heating the substrate to the second temperature at the fourth station to densify the second flowable film layer; and repeating steps (a) through (h) in cycles until a film of desired thickness is deposited on the substrate; The method, wherein the second temperature is different from the first temperature.

19. 1. A method for flowable gap-fill deposition, said method comprising: (a) placing a substrate at a first station; (b) contacting the substrate at the first station with a precursor at a first temperature, wherein contacting with the precursor forms a flowable film layer within the gap of the substrate; (c) performing an anneal on the substrate by heating the surface of the substrate to a second temperature at the first station to densify the flowable film layer, the second temperature being higher than the first temperature, the second temperature being between 80°C and 1000°C; and repeating steps (a) through (c) in cycles until a film of desired thickness is deposited on the substrate; the first temperature is lower than the second temperature; The method, wherein the cycle further comprises plasma curing the substrate after step (c).

20. 20. The method of claim 19, wherein the surface of the substrate is heated to the second temperature by one or more infrared lamps.

21. 21. The method of claim 20, wherein the surface of the substrate is heated to the second temperature for less than 10 seconds.

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