Substrate Processing System

Abstract

To improve ease of substrate transfer control in a substrate processing system having both batch and a single-wafer processing section.SOLUTION: A substrate processing system has a loading section, a batch processing section, a single-wafer processing section, an interface section, and an unloading section. The batch processing section processes lots containing a plurality of substrates in batches. The single-wafer processing section processes substrates contained in a lot one at a time. The interface section passes substrates one by one between the batch processing section and the single-wafer processing section. The loading section, the batch processing section, the interface section, the single-wafer processing section, and unloading section are arranged in this order. The batch processing section immerses the lots in a processing tank in which the processing solution is stored. The single-wafer processing section includes a solution processing section that performs solution processing on the substrate. The interface section passes the substrate processed by the batch processing section to the solution processing section with the processing solution attached.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing system. [Background technology]

[0002] Conventionally, substrate processing systems have been known that include both a single-wafer processing section (single-wafer processing section) that processes substrates such as semiconductor wafers one by one, and a batch processing section (batch processing section) that processes multiple substrates at once. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-147779 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for improving ease of substrate transport control in a substrate processing system equipped with both a batch processing unit and a single wafer processing unit. [Means for solving the problem]

[0005] A substrate processing system according to one aspect of the present disclosure includes a loading unit, a batch processing unit, a single wafer processing unit, an interface unit, and an unloading unit. The loading unit includes a first mounting unit on which a carrier containing multiple substrates is placed. The batch processing unit processes a lot containing multiple substrates at once. The single wafer processing unit processes each substrate included in the lot. The interface unit transfers each substrate between the batch processing unit and the single wafer processing unit. The unloading unit includes a second mounting unit on which a carrier containing a substrate processed in the single wafer processing unit is placed. The loading unit, batch processing unit, interface unit, single wafer processing unit, and unloading unit are arranged in this order. The batch processing unit immerses the lot in a processing bath containing a processing liquid. The single wafer processing unit includes a liquid processing unit that performs liquid processing on the substrates. The interface unit transfers the substrates processed in the batch processing unit to the liquid processing unit with the processing liquid attached. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the ease of substrate transport control in a substrate processing system equipped with both a batch processing section and a single wafer processing section. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram showing a schematic configuration of a substrate processing system according to a first embodiment. [Figure 2] FIG. 2 is a schematic plan view of the loading area, batch area, and IF area of ​​the substrate processing system according to the first embodiment. [Figure 3] FIG. 3 is a schematic plan view of the IF area, the single wafer area, and the unloading area of ​​the substrate processing system according to the first embodiment. [Figure 4] FIG. 4 is a block diagram showing the configuration of an etching treatment tank according to the first embodiment. [Figure 5] FIG. 5 is a schematic diagram showing the configuration of the liquid processing unit according to the first embodiment. [Figure 6] FIG. 6 is a schematic diagram showing the configuration of the drying processing unit according to the first embodiment. [Figure 7] FIG. 7 is a flowchart showing the procedure of the process executed by the substrate processing system according to the first embodiment. [Figure 8] FIG. 8 is a schematic plan view of a substrate processing system according to the second embodiment. [Figure 9] FIG. 9 is a schematic front view of a first placement section according to the second embodiment. [Figure 10] FIG. 10 is a schematic front view of the second placement section according to the second embodiment. [Figure 11] FIG. 11 is a schematic side view of the substrate processing system according to the third embodiment. [Figure 12] FIG. 12 is a schematic plan view of a sheet area according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a mode for carrying out a substrate processing system according to the present disclosure (hereinafter referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to this embodiment. Furthermore, each embodiment can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same components in each of the following embodiments will be given the same reference numerals, and duplicated explanations will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In addition, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the direction of rotation around the vertical axis may be referred to as the θ direction.

[0011] Patent Document 1 discloses a substrate processing system that includes a loading / unloading section where substrates are loaded and unloaded, a batch processing section that processes multiple substrates at once, a single substrate processing section that processes substrates one by one, and a transport mechanism that transports substrates.

[0012] In Patent Document 1, the transport mechanism is disposed in an area where a batch processing unit is located, and transports substrates into and out of the batch processing unit. The transport mechanism also transports substrates into and out of an area where multiple single wafer processing units are located. The transport mechanism also receives unprocessed substrates from the load / unload unit and passes processed substrates to the load / unload unit. In the substrate processing system described in Patent Document 1, transport control may become complicated. For this reason, a substrate processing system with easy transport control is desired.

[0013] (First embodiment) <Configuration of substrate processing system> First, a schematic configuration of a substrate processing system according to a first embodiment will be described with reference to Fig. 1. Fig. 1 is a block diagram showing a schematic configuration of a substrate processing system 1 according to a first embodiment.

[0014] 1, the substrate processing system 1 according to the first embodiment includes a loading area A1, a batch area A2, an IF (interface) area A3, a single wafer area A4, and an unloading area A5, which are arranged in this order.

[0015] In the substrate processing system 1 according to the first embodiment, semiconductor wafers (hereinafter simply referred to as "wafers") are first loaded into the loading area A1. The loading area A1 is provided with a first loading section and the like on which a carrier containing multiple wafers is placed. In the loading area A1, processes such as removing multiple wafers from the carrier placed on the first loading section to form a lot and transferring the formed lot to the batch area are performed.

[0016] The batch area A2 is provided with a batch processing unit and the like that processes wafers in batch units in lots. In the first embodiment, the batch area A2 uses the batch processing unit to perform processes such as etching of wafers in lots. The batch area A2 is also provided with a lot transfer mechanism that transfers the lots. The lot transfer mechanism transfers the lots formed in the carry-in area A1 to the batch area A2.

[0017] In the IF area A3, wafers are transferred from the batch area to the single wafer area. The IF area A3 is equipped with an interface unit that transfers wafers one by one. Wafers are transferred from the batch area to the single wafer area using this interface unit.

[0018] The single wafer area A4 is provided with a single wafer processing section that processes wafers one by one. In the first embodiment, the single wafer area A4 is provided with a first single wafer processing section to which wafers are transferred from the IF area, and a second single wafer processing section that processes wafers processed by the first single wafer processing section.

[0019] Specifically, the first single wafer processing unit is a liquid processing unit that forms a liquid film on the surface of the wafer, and the second single wafer processing unit is a plurality of drying processing units that bring the wafer with the liquid film formed on its surface into contact with a supercritical fluid to dry the wafer.

[0020] That is, in the substrate processing system 1 according to the first embodiment, wafers are etched in batch area A2 on a lot-by-lot basis, and then the wafers are dried one by one in single wafer area A4.

[0021] The unloading area A5 is provided with a second mounting section on which empty carriers are placed, etc. In the unloading area A5, wafers that have been dried in the single wafer area A4 are accommodated in carriers placed on the second mounting section.

[0022] In this way, in the substrate processing system 1 according to the first embodiment, wafers are transported from the batch area A2 to the single wafer area A4 using the interface unit provided in the IF area A3. Therefore, a lot transport mechanism is not required to transport wafers to the single wafer area A4.

[0023] In the substrate processing system 1 according to the first embodiment, the loading area A1 is located at one end of the arrangement of the areas A1 to A5, and the unloading area A5 is located at the other end. In this substrate processing system 1, wafers are transported in one direction from the loading area A1 to the unloading area A5. Therefore, the lot transport mechanism does not need to transport wafers that have been processed in the single wafer area A4, i.e., wafers that have been dried.

[0024] Therefore, the substrate processing system 1 according to the first embodiment can improve ease of wafer transport control.

[0025] Next, a specific configuration of the substrate processing system 1 according to the first embodiment will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a schematic plan view of the loading area, batch area, and IF area of ​​the substrate processing system 1 according to the first embodiment. Fig. 3 is a schematic plan view of the IF area, single wafer area, and unloading area of ​​the substrate processing system 1 according to the first embodiment.

[0026] First, the configurations of the carry-in area A1, batch area A2, and IF area A3 will be described with reference to FIG.

[0027] (About loading area A1) 2, the loading area A1 is equipped with a carrier loading section 2 and a lot formation section 3. The carrier loading section 2 and the lot formation section 3 are arranged in the same direction as the areas A1 to A5 (the X-axis direction). The lot formation section 3 is adjacent to the batch area A2.

[0028] The carrier loading section 2 includes a first placement section 20, a first transport mechanism 21, carrier stocks 22 and 23, and a carrier placement table 24.

[0029] A plurality of carriers C transferred from outside are placed on the first placement part 20. The carrier C is a container that accommodates a plurality of (e.g., 25) wafers W arranged one above the other in a horizontal position. The first transfer mechanism 21 transfers the carriers C between the first placement part 20, carrier stocks 22 and 23, and the carrier placement table 24.

[0030] The lot formation unit 3 includes a second transfer mechanism 30 and a plurality of (for example, two) lot holding units 31, and forms a lot consisting of a plurality of wafers W. In the first embodiment, a lot is formed by combining a total of 50 wafers W accommodated in two carriers C. The plurality of wafers W forming one lot are arranged with their plate surfaces facing each other at a fixed interval. Note that the number of wafers W forming a lot is not limited to 50. For example, a lot may be composed of 100 wafers W.

[0031] The second transfer mechanism 30 transfers a plurality of wafers W between the carrier C placed on the carrier mounting table 24 and the lot holder 31. The second transfer mechanism 30 is configured, for example, by an articulated robot, and transfers a plurality of (for example, 25) wafers W at once. The second transfer mechanism 30 can also change the posture of the plurality of wafers W from a horizontal posture to a vertical posture during transfer.

[0032] The lot holder 31 holds a plurality of wafers W for one lot in a vertical position. The second transfer mechanism 30 removes a plurality of wafers W from a carrier C placed on the carrier mounting table 24 and places them in a vertical position on the lot holder 31. For example, one lot is formed by repeating this operation twice.

[0033] (Regarding batch area A2) The batch area A2 is provided with a pre-processing unit 4_1, a plurality of (here, two) etching processing units 4_2, and a post-processing unit 4_3. The pre-processing unit 4_1, the plurality of etching processing units 4_2, and the post-processing unit 4_3 are an example of a batch processing unit.

[0034] The pre-processing unit 4_1, the etching units 4_2, and the post-processing unit 4_3 are arranged in this order along the direction in which the areas A1 to A5 are arranged (the X-axis direction). The pre-processing unit 4_1 is adjacent to the loading area A1, and the post-processing unit 4_3 is adjacent to the IF area A3.

[0035] The pretreatment section 4_1 includes a treatment bath 40 for pretreatment, a treatment bath 41 for rinsing, and a lot immersion mechanism .

[0036] Processing tank 40 and processing tank 41 can accommodate one lot of wafers W arranged in a vertical position. Processing tank 40 stores a processing liquid for pre-processing. For example, processing tank 40 stores DHF (dilute hydrofluoric acid) as a processing liquid for pre-processing, in this case for removing native oxide films. Processing tank 41 stores a processing liquid for rinsing (e.g., deionized water).

[0037] The lot immersion mechanism 42 holds a plurality of wafers W forming a lot in a vertical position. The lot immersion mechanism 42 has an elevation mechanism for raising and lowering the held lot, such as lowering the lot from above the processing baths 40, 41 to immerse it in the processing baths 40, 41, or raising the lot immersed in the processing baths 40, 41 to remove it from the processing baths 40, 41. The lot immersion mechanism 42 also has a horizontal movement mechanism for horizontally moving the lot between a position above the processing baths 40 and a position above the processing baths 41.

[0038] Here, an example is shown in which the pre-treatment treatment tank 40 is placed on the positive X-axis side of the rinsing treatment tank 41, but the pre-treatment treatment tank 40 may also be placed on the negative X-axis side of the rinsing treatment tank 41.

[0039] The etching processing section 4_2 includes a processing bath 43 for etching, a processing bath 44 for rinsing, and lot immersion mechanisms 45 and 46.

[0040] Processing tank 43 and processing tank 44 can accommodate one lot of wafers W arranged in a vertical position. Processing tank 43 stores a processing liquid for etching (hereinafter also referred to as "etching liquid"). Details of processing tank 43 will be described later. Processing tank 44 stores a processing liquid for rinsing (e.g., deionized water).

[0041] The lot immersion mechanisms 45 and 46 hold a plurality of wafers W forming a lot in a vertical position. The lot immersion mechanism 45 has an elevator mechanism for raising and lowering the held lot, such as lowering the lot from above the processing tank 43 to immerse it in the processing tank 43, or raising the lot immersed in the processing tank 43 to remove it from the processing tank 43. Similarly, the lot immersion mechanism 46 also has an elevator mechanism for raising and lowering the held lot, such as lowering the lot from above the processing tank 44 to immerse it in the processing tank 44, or raising the lot immersed in the processing tank 44 to remove it from the processing tank 44.

[0042] Here, an example is shown in which the etching treatment tank 43 is arranged on the positive side of the X-axis of the rinsing treatment tank 44, but the etching treatment tank 43 may also be arranged on the negative side of the X-axis of the rinsing treatment tank 44.

[0043] The post-treatment section 4_3 includes a treatment bath 47 for post-treatment, a treatment bath 48 for rinsing, and a lot immersion mechanism 49.

[0044] Processing tank 47 and processing tank 48 can accommodate one lot of wafers W arranged in a vertical position. Processing tank 47 stores a processing liquid for post-processing. For example, processing tank 40 stores SC1 (a mixture of ammonia, hydrogen peroxide, and water) as a processing liquid for post-processing, in this case, cleaning. Processing tank 48 stores a processing liquid for rinsing (e.g., deionized water). Processing tank 48 for rinsing is adjacent to IF area A3.

[0045] The lot immersion mechanism 49 holds a plurality of wafers W forming a lot in a vertical position. The lot immersion mechanism 49 has an elevation mechanism for raising and lowering the held lot, such as lowering the lot from above the processing baths 47, 48 to immerse it in the processing baths 47, 48, or raising the lot immersed in the processing baths 47, 48 to remove it from the processing baths 47, 48. The lot immersion mechanism 49 also has a horizontal movement mechanism for horizontally moving the lot between a position above the processing bath 47 and a position above the processing bath 48.

[0046] Here, an example is shown in which four batch processing units (a pre-processing unit 4_1, multiple etching processing units 4_2, and a post-processing unit 4_3) are arranged in the batch area A2, but the number of batch processing units is not limited to this example and may be, for example, one.

[0047] (Regarding the third transport mechanism 50) The substrate processing system 1 includes a third transfer mechanism 50 (an example of a lot transfer mechanism). The third transfer mechanism 50 is disposed across the loading area A1 and the batch area A2, and transfers lots from the loading area A1 to the batch area A2.

[0048] The third transfer mechanism 50 includes a holder 51, rails 52, and a movable body 53. The holder 51 holds a lot with multiple wafers W in a vertical position. The rails 52 extend along the X-axis direction from the lot holder 31 in the loading area A1 to the processing tank 48 in the batch area A2. The movable body 53 is attached to the rails 52 and moves the holder 51 along the rails 52.

[0049] The third transport mechanism 50 uses a holder 51 to hold the lot held in the lot holder 31, and transports the held lot to the batch area A2. The third transport mechanism 50 then transports the lot through the pre-processing unit 4_1, the etching processing unit 4_2, and the post-processing unit 4_3 in this order.

[0050] The etching treatment tank 43 will now be described with reference to Fig. 4. Fig. 4 is a block diagram showing the configuration of the etching treatment tank 43 according to the first embodiment.

[0051] In the processing tank 43, an etching process is performed using a predetermined etching solution to selectively etch the silicon nitride film out of the silicon nitride film (SiN) and silicon oxide film (SiO2) formed on the wafer W. In this etching process, a solution in which a silicon (Si)-containing compound is added to an aqueous solution of phosphoric acid (H3PO4) to adjust the silicon concentration is used as the etching solution.

[0052] The silicon concentration in the etching solution can be adjusted by immersing a dummy substrate in an aqueous phosphoric acid solution to dissolve silicon (seasoning), or by dissolving a silicon-containing compound such as colloidal silica in an aqueous phosphoric acid solution. Alternatively, the silicon concentration can be adjusted by adding an aqueous solution of a silicon-containing compound to the aqueous phosphoric acid solution.

[0053] As shown in FIG. 4, the etching treatment tank 43 includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank with an open top, and stores an etching solution inside. A lot formed of a plurality of wafers W is immersed in the inner tank 101. The outer tank 102 is open at the top, and is disposed around the upper portion of the inner tank 101. The etching solution that overflows from the inner tank 101 flows into the outer tank 102.

[0054] The treatment tank 43 also includes a phosphoric acid aqueous solution supply unit 103, a silicon supply unit 104, and a DIW supply unit 105.

[0055] The aqueous phosphoric acid solution supply unit 103 includes an aqueous phosphoric acid solution supply source 131 , an aqueous phosphoric acid solution supply line 132 , and a flow rate regulator 133 .

[0056] The phosphoric acid aqueous solution supply source 131 supplies an aqueous phosphoric acid solution having a desired phosphoric acid concentration. The phosphoric acid aqueous solution supply line 132 connects the phosphoric acid aqueous solution supply source 131 and the outer tank 102, and supplies the aqueous phosphoric acid solution from the phosphoric acid aqueous solution supply source 131 to the outer tank 102.

[0057] The flow rate regulator 133 is provided on the phosphoric acid aqueous solution supply line 132, and regulates the amount of the phosphoric acid aqueous solution supplied to the outer tank 102. The flow rate regulator 133 is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0058] The silicon supply unit 104 includes a silicon supply source 141 , a silicon supply line 142 , and a flow rate regulator 143 .

[0059] The silicon supply source 141 is a tank for storing an aqueous solution of a silicon-containing compound. The silicon supply line 142 connects the silicon supply source 141 and the outer bath 102, and supplies the aqueous solution of a silicon-containing compound from the silicon supply source 141 to the outer bath 102.

[0060] The flow rate regulator 143 is provided in the silicon supply line 142 and regulates the supply rate of the silicon-containing compound aqueous solution supplied to the outer bath 102. The flow rate regulator 143 is composed of an on-off valve, a flow control valve, a flow meter, etc. The supply rate of the silicon-containing compound aqueous solution is regulated by the flow rate regulator 143, thereby regulating the silicon concentration of the etching solution.

[0061] The DIW supply unit 105 has a DIW supply source 151, a DIW supply line 152, and a flow rate regulator 153. The DIW supply unit 105 supplies DIW (DeIonized Water) to the outer tank 102 to replenish the moisture evaporated by heating the etching solution.

[0062] The DIW supply line 152 connects the DIW supply source 151 and the outer bath 102, and supplies DIW at a predetermined temperature from the DIW supply source 151 to the outer bath 102.

[0063] The flow rate regulator 153 is provided in the DIW supply line 152 and regulates the amount of DIW supplied to the outer bath 102. The flow rate regulator 153 is composed of an on-off valve, a flow control valve, a flow meter, etc. The amount of DIW supplied is adjusted by the flow rate regulator 153, thereby adjusting the temperature, phosphoric acid concentration, and silicon concentration of the etching solution.

[0064] The processing tank 43 also includes a circulation unit 106. The circulation unit 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation unit 106 includes a circulation line 161, a plurality of processing solution supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0065] The circulation line 161 connects the outer bath 102 and the inner bath 101. One end of the circulation line 161 is connected to the outer bath 102, and the other end of the circulation line 161 is connected to a plurality of processing liquid supply nozzles 162 arranged inside the inner bath 101.

[0066] The filter 163, heater 164, and pump 165 are provided in the circulation line 161. The filter 163 removes impurities from the etching solution flowing through the circulation line 161. The heater 164 heats the etching solution flowing through the circulation line 161 to a temperature suitable for the etching process. The pump 165 sends the etching solution in the outer bath 102 to the circulation line 161. The filter 163, heater 164, and pump 165 are provided in this order from the upstream side.

[0067] The circulation unit 106 sends the etching liquid from the outer tank 102 into the inner tank 101 via a circulation line 161 and a plurality of processing liquid supply nozzles 162. The etching liquid sent into the inner tank 101 overflows from the inner tank 101 and flows back into the outer tank 102. In this way, the etching liquid circulates between the inner tank 101 and the outer tank 102.

[0068] The circulation unit 106 may heat the etching liquid with the heater 164 to bring the etching liquid to a boiling state.

[0069] (About IF Area A3) A fourth transfer mechanism 55 (an example of an interface section) is disposed in the IF area A3. The fourth transfer mechanism 55 is configured, for example, by an articulated robot, and transfers wafers W one by one. The fourth transfer mechanism 55 can also change the orientation of the multiple wafers W from a vertical orientation to a horizontal orientation during transfer.

[0070] The fourth transport mechanism 55 takes out one wafer W from the lot immersed in the rinsing processing tank 48 provided in the post-processing unit 4_3, changes the posture of the taken-out wafer W from a vertical posture to a horizontal posture, and then transports it into the liquid processing unit 6 in the single wafer area A4 described later.

[0071] (For sheet area A4) Next, the configurations of the sheet area A4 and the unloading area A5 will be described with reference to FIG.

[0072] Arranged in single wafer area A4 are a liquid processing unit 6, a drying processing unit 7, and a fifth transport mechanism 8. The liquid processing unit 6 is an example of a first single wafer processing unit, and the drying processing unit 7 is an example of a second single wafer processing unit. The fifth transport mechanism 8 is an example of a single wafer transport mechanism.

[0073] The liquid processing unit 6, drying processing unit 7, and fifth transport mechanism 8 are arranged in this order along a direction (Y-axis direction) perpendicular to the arrangement direction of the areas A1 to A5. Specifically, the fifth transport mechanism 8 is disposed in the center of the single-wafer area A4, and the liquid processing unit 6 is disposed on one side of the fifth transport mechanism 8 in the Y-axis direction (here, the negative Y-axis side). In addition, the drying processing unit 7 is disposed on the opposite side of the fifth transport mechanism 8 from the liquid processing unit 6.

[0074] Liquid processing section 6 performs liquid processing on wafers W transferred by fourth transfer mechanism 55. Specifically, liquid processing section 6 forms a liquid film of a drying processing liquid on the surface of wafer W. The wafers W on which the liquid film has been formed by liquid processing section 6 are removed from liquid processing section 6 by fifth transfer mechanism 8 and transferred to drying processing section 7.

[0075] The fifth transfer mechanism 8 includes a holder that holds the wafer W. The fifth transfer mechanism 8 is capable of moving horizontally and vertically and rotating about a vertical axis, and uses the holder to transfer the wafer W. Specifically, the fifth transfer mechanism 8 transfers the wafer W from the liquid processing unit 6 to the drying processing unit 7, and from the drying processing unit 7 to a wafer mounting table 91 in the transfer area A5, which will be described later.

[0076] The drying processing unit 7 performs supercritical drying processing on the wafer W on which the liquid film has been formed by the liquid processing unit 6. Specifically, the drying processing unit 7 dries the wafer W by bringing the wafer W on which the liquid film has been formed into contact with a processing fluid in a supercritical state.

[0077] The drying processing unit 7 includes a processing area 71 where a supercritical drying process is performed, and a delivery area 72 where the wafer W is delivered between the fifth transfer mechanism 8 and the processing area 71.

[0078] In addition, a supply unit 73 is disposed in the single wafer area A4 at a position adjacent to the processing area 71 of the dryer 7. The supply unit 73 supplies a processing fluid to the processing area 71 of the dryer 7. The supply unit 73 includes a group of supply devices including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing that houses the group of supply devices. In the first embodiment, the supply unit 73 supplies CO2 as a processing fluid to the dryer 7.

[0079] Liquid processing unit 6 has an inlet 61 and an outlet 62 for wafers W. Inlet 61 is located opposite IF area A3, and wafers W are loaded therethrough by fourth transfer mechanism 55. Outlet 62 is located opposite fifth transfer mechanism 8, and wafers W are loaded therethrough. By providing inlet 61 and outlet 62 at separate locations, wafers W can be efficiently loaded and unloaded into and from liquid processing unit 6. Outlet 62 may also be located opposite delivery area 72. In this case, the distance over which wafers W, on which a liquid film has been formed, are transferred by fifth transfer mechanism 8 from liquid processing unit 6 to drying processing unit 7 is minimized, thereby preventing the liquid film from drying.

[0080] Here, the configurations of the liquid processing unit 6 and the drying processing unit 7 will be described. First, the configuration of the liquid processing unit 6 will be described with reference to Fig. 5. Fig. 5 is a schematic diagram showing the configuration of the liquid processing unit 6 according to the first embodiment.

[0081] 5, liquid processing unit 6 holds wafer W substantially horizontally on spin chuck 205 disposed in outer chamber 203 that forms a processing space, and rotates wafer W by rotating spin chuck 205 about a vertical axis. Then, liquid processing unit 6 moves nozzle arm 206 above the rotating wafer W, and supplies a drying processing liquid, here IPA (isopropyl alcohol), from nozzle 261 provided at the tip of nozzle arm 206.

[0082] In liquid processing section 6, a chemical liquid supply path 251 is also formed inside spin chuck 205. Then, the lower surface of wafer W is also processed by IPA supplied from this chemical liquid supply path 251.

[0083] The IPA is received by the outer chamber 203 or the inner cup 204 disposed within the outer chamber 203, and is discharged from a drain port 231 provided at the bottom of the outer chamber 203 or a drain port 241 provided at the bottom of the inner cup 204. Furthermore, the atmosphere within the outer chamber 203 is exhausted from an exhaust port 232 provided at the bottom of the outer chamber 203.

[0084] Liquid processing unit 6 supplies IPA to the upper and lower surfaces of wafer W while rotating spin chuck 205. This replaces the DIW remaining on both surfaces of wafer W with IPA. Thereafter, liquid processing unit 6 gradually stops the rotation of spin chuck 205.

[0085] Thereafter, the wafer W, with the IPA liquid film formed on its upper surface, is transferred from the spin chuck 205 to the fifth transfer mechanism 8, and is transferred out of the liquid processing unit 6 by the fifth transfer mechanism 8. The liquid film formed on the wafer W prevents pattern collapse caused by evaporation (vaporization) of the liquid on the upper surface of the wafer W during transfer of the wafer W from the liquid processing unit 6 to the drying processing unit 7.

[0086] Next, the configuration of the drying processing unit 7 will be described with reference to Fig. 6. Fig. 6 is a schematic diagram showing the configuration of the drying processing unit 7 according to the first embodiment.

[0087] 6, the drying processing unit 7 has a main body 301, a holding plate 302, and a lid member 303. The housing-like main body 301 has an opening 304 formed therein for loading and unloading the wafer W. The holding plate 302 holds the wafer W to be processed in a horizontal direction. The lid member 303 supports the holding plate 302 and also seals the opening 304 when the wafer W is loaded into the main body 301.

[0088] The main body 301 is a container having a processing space formed therein capable of accommodating one wafer W, and its wall is provided with supply ports 305, 306 and discharge port 307. The supply ports 305, 306 and the discharge port 307 are connected to a supply flow path and a discharge flow path, respectively, for circulating a supercritical fluid in the drying processing unit 7.

[0089] Supply port 305 is connected to the side surface of housing-like main body 301 opposite opening 304. Supply port 306 is connected to the bottom surface of main body 301. Discharge port 307 is connected to the lower side of opening 304. Note that although two supply ports 305, 306 and one discharge port 307 are illustrated in Figure 6, the numbers of supply ports 305, 306 and discharge port 307 are not particularly limited.

[0090] Inside the main body 301, fluid supply headers 308, 309 and fluid discharge header 300 are provided. A plurality of supply ports are formed in the fluid supply headers 308, 309, aligned in the longitudinal direction of the fluid supply headers 308, 309, and a plurality of discharge ports are formed in the fluid discharge header 300, aligned in the longitudinal direction of the fluid discharge header 300.

[0091] Fluid supply header 308 is connected to supply port 305 and is provided adjacent to the side surface opposite opening 304 inside housing-like main body 301. In addition, a plurality of supply ports formed side by side on fluid supply header 308 face the opening 304 side.

[0092] Fluid supply header 309 is connected to supply port 306 and is provided at the center of the bottom surface inside housing-like main body 301. A plurality of supply ports formed side by side on fluid supply header 309 face upward.

[0093] Fluid discharge header 300 is connected to discharge port 307, and is provided inside housing-like main body 301 adjacent to the side surface on the opening 304 side and below opening 304. In addition, multiple discharge ports formed side by side on fluid discharge header 300 face upward.

[0094] Fluid supply headers 308 and 309 supply the supercritical fluid into main body 301. Fluid discharge header 300 guides and discharges the supercritical fluid in main body 301 to the outside of main body 301. The supercritical fluid discharged to the outside of main body 301 via fluid discharge header 300 includes IPA liquid dissolved in the supercritical fluid in a supercritical state from the surface of wafer W.

[0095] In the drying processing unit 7, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid under high pressure (for example, 16 MPa), and gradually dissolves in the supercritical fluid, gradually replacing the spaces between the patterns with the supercritical fluid. Finally, the spaces between the patterns are filled only with the supercritical fluid.

[0096] After the IPA liquid is removed from between the patterns, the pressure inside the main body 301 is reduced from a high pressure state to atmospheric pressure, whereby the CO2 changes from a supercritical state to a gaseous state, and the spaces between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0097] (Regarding unloading area A5) In the carry-out area A5, there are arranged a wafer placing table 91, a sixth transport mechanism 92, and a second placing unit 93. The wafer placing table 91, the sixth transport mechanism 92, and the second placing unit 93 are arranged in this order along the arrangement direction of the areas A1 to A5 (the X-axis direction). The wafer placing table 91 is arranged adjacent to the single wafer area A4.

[0098] A wafer W is placed in a horizontal position on the wafer placement table 91. The wafer placement table 91 is accessible to both the fifth transfer mechanism 8 and the sixth transfer mechanism 92.

[0099] The sixth transfer mechanism 92 includes a holder that holds a wafer W. The sixth transfer mechanism 92 is capable of moving horizontally and vertically and rotating about a vertical axis, and uses the holder to transfer the wafer W between the wafer placement table 91 and the second placement unit 93. The second placement unit 93 is capable of placing a plurality of carriers C thereon.

[0100] (Regarding the control device 11) The substrate processing system 1 includes a control device 11. The control device 11 is, for example, a computer, and includes a control unit 12 and a storage unit 13. The storage unit 13 stores programs that control various processes executed in the substrate processing system 1. The control unit 12 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 13.

[0101] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 13 of the control device 11. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0102] <Specific Operation of Substrate Processing System 1> Next, the procedure of the process executed by the substrate processing system 1 will be described with reference to Fig. 7. Fig. 7 is a flowchart showing the procedure of the process executed by the substrate processing system 1 according to the first embodiment. Each process shown in Fig. 7 is executed under the control of the control unit 12.

[0103] As shown in FIG. 7, the substrate processing system 1 uses the second transfer mechanism 30 to take out a plurality of wafers W from two carriers C, and forms a lot with the plurality of wafers W (e.g., 25 wafers) accommodated in each carrier C (step S101).

[0104] The processing of step S101 will be described with reference to Fig. 2. First, the first transfer mechanism 21 removes the carrier C from the first mounting unit 20 and places it on the carrier mounting table 24. Then, the second transfer mechanism 30 removes multiple wafers W from the carrier C placed on the carrier mounting table 24, changes the posture of the removed multiple wafers W from a horizontal posture to a vertical posture, and places the multiple wafers W on the lot holder 31. A lot is formed by repeating this operation twice.

[0105] Next, the substrate processing system 1 performs pre-processing on the formed lot (step S102).

[0106] Specifically, the third transfer mechanism 50 receives the lot from the lot holder 31 and transfers it to the lot immersion mechanism 42 of the pre-processing unit 4_1. Then, the lot immersion mechanism 42 immerses the received lot in DHF stored in the processing tank 40. Thereafter, the lot immersion mechanism 42 removes the lot from the processing tank 40 and immerses it in DIW stored in the processing tank 41. As a result, the DHF adhering to the wafer W is washed away by the DIW stored in the processing tank 41.

[0107] Subsequently, the substrate processing system 1 performs an etching process on the lot processed by the pre-processing unit 4_1 (step S103).

[0108] Specifically, the third transfer mechanism 50 receives the lot from the lot immersion mechanism 42 of the pre-treatment unit 4_1 and transfers it to the lot immersion mechanism 45 of the etching treatment unit 4_2. The lot immersion mechanism 45 then immerses the received lot in the etching liquid stored in the treatment tank 43. The lot immersion mechanism 45 then removes the lot from the treatment tank 43 and transfers it to the third transfer mechanism 50. The third transfer mechanism 50 then transfers the lot received from the lot immersion mechanism 45 to the lot immersion mechanism 46. The lot immersion mechanism 46 then immerses the received lot in the DIW stored in the treatment tank 44. As a result, the etching liquid adhering to the wafer W is washed away by the DIW stored in the treatment tank 44.

[0109] Subsequently, the substrate processing system 1 performs a cleaning process on the lot processed by the etching processing unit 4_2 (step S104).

[0110] Specifically, the third transfer mechanism 50 receives the lot from the lot immersion mechanism 46 and transfers it to the lot immersion mechanism 49 of the post-processing unit 4_3. Then, the lot immersion mechanism 49 immerses the received lot in SC1 stored in the processing tank 47. Thereafter, the lot immersion mechanism 49 removes the lot from the processing tank 47 and immerses it in the DIW stored in the processing tank 48. As a result, the SC1 adhering to the wafer W is washed away by the DIW stored in the processing tank 48.

[0111] Subsequently, the substrate processing system 1 performs a liquid film forming process on the wafers W processed by the post-processing unit 4_3 (step S105). The liquid film forming process is performed for each wafer W, not for each lot.

[0112] Specifically, the fourth transfer mechanism 55 takes out one wafer W from the lot held by the lot immersion mechanism 49 inside the processing tank 48. Then, the fourth transfer mechanism 55 changes the orientation of the wafer W from a vertical position to a horizontal position, and delivers the wafer W to the spin chuck 205 (see FIG. 5) in the liquid processing unit 6 through the loading port 61 (see FIG. 3).

[0113] The liquid processing unit 6 supplies IPA to the upper and lower surfaces of the wafer W while rotating the spin chuck 205. As a result, the DIW remaining on both surfaces of the wafer W is replaced with IPA. In addition, a liquid film of IPA is formed on the upper surface of the wafer W.

[0114] Next, the substrate processing system 1 performs a drying process on the wafer W after the liquid film forming process (step S106).

[0115] Specifically, fifth transfer mechanism 8 removes wafer W from liquid processing unit 6 through removal port 62 and transfers the removed wafer W to holding plate 302 (see FIG. 6) arranged in delivery area 72 (see FIG. 3). Next, drying processing unit 7 moves holding plate 302 to processing area 71, thereby placing wafer W inside main body 301.

[0116] Next, the drying processing unit 7 supplies the supercritical fluid into the main body 301. As a result, the pressure inside the main body 301 is increased from atmospheric pressure to a predetermined first pressure. Here, the first pressure is a pressure equal to or higher than the critical pressure (approximately 7.2 MPa) at which the supercritical fluid CO2 enters a supercritical state, and is, for example, approximately 16 MPa. Therefore, by supplying the supercritical fluid into the main body 301, the supercritical fluid inside the main body 301 undergoes a phase change to a supercritical state. Then, the IPA on the wafer W begins to dissolve into the supercritical fluid in this supercritical state.

[0117] Thereafter, the pressure inside the main body 301 is reduced from the high pressure state to atmospheric pressure, whereby the CO changes from the supercritical state to the gas state, and the gaps between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0118] Next, the substrate processing system 1 performs an unloading process to place the dried wafer W into the carrier C (step S107).

[0119] Specifically, the drying processing unit 7 moves the holding plate 302 to the delivery area 72, and the fifth transfer mechanism 8 receives the dried wafer W from the holding plate 302. Next, the fifth transfer mechanism 8 places the received wafer W on the wafer placement table 91. Then, the sixth transfer mechanism 92 removes the wafer W from the wafer placement table 91 and stores it in the carrier C placed on the second placement unit 93.

[0120] (Second embodiment) Next, the configuration of a substrate processing system according to a second embodiment will be described with reference to FIGS. 8 to 10. FIG. 8 is a schematic plan view of the substrate processing system according to the second embodiment. FIG. 9 is a schematic front view of a first platform according to the second embodiment. FIG. 10 is a schematic front view of a second platform according to the second embodiment. Note that the batch area A2 is omitted in FIG. 8. The batch area A2 according to the second embodiment has the same configuration as the batch area A2 according to the first embodiment.

[0121] 8, a substrate processing system 1A according to the second embodiment includes a carrier loading part 2A in a loading area A1. The carrier loading part 2A includes a first loading part 20A. The first loading part 20A is disposed at a position adjacent to the lot formation part 3.

[0122] As shown in Fig. 9, the first mount section 20A is provided with a plurality of mount tables 26, 27, 28 and a seventh transport mechanism 25. The plurality of mount tables 26, 27, 28 are arranged on both sides of the seventh transport mechanism 25. In the example shown in Fig. 9, two mount tables 28, one mount table 27, and one mount table 26 are arranged in this order from the bottom up in the height direction (Z-axis direction) on the positive Y-axis direction side of the seventh transport mechanism 25. Also, in the example shown in Fig. 9, three mount tables 28 and one mount table 26 are arranged in this order from the bottom up in the height direction on the negative Y-axis direction side of the seventh transport mechanism 25.

[0123] A carrier C transported from outside is placed on the mounting table 26. The mounting table 27 is adjacent to the entrance 27a to the lot formation section 3, and the carrier C containing the wafers W to be transported into the lot formation section 3 is placed on the mounting table 27. For example, the carrier C before being transported into the lot formation section 3 is temporarily placed on the mounting table 28.

[0124] The seventh transport mechanism 25 transports the carrier C between the multiple mounting tables 26, 27, and 28. Specifically, the seventh transport mechanism 25 includes a rail 25a extending along the height direction (Z-axis direction) and a holder 25b that holds the carrier C. The holder 25b is movable along the rail 25a.

[0125] The seventh transfer mechanism 25 holds the carrier C placed on the mounting table 26 using the holder 25b and transfers it to the mounting table 27 or the mounting table 28. The plurality of wafers W accommodated in the carrier C placed on the mounting table 27 are removed from the carrier C by the second transfer mechanism 30 arranged in the lot formation unit 3. The empty carrier C is transferred to the mounting table 26 or the mounting table 28 by the seventh transfer mechanism 25.

[0126] In this way, in the substrate processing system 1A according to the second embodiment, the first placement section 20A is provided adjacent to the lot formation section 3, so that the footprint, which is the proportion of the loading area A1 to the floor area of ​​a clean room or the like, can be kept small.

[0127] 8, in the substrate processing system 1A according to the second embodiment, the IF area A3 is arranged in the single wafer area A4. Specifically, the fourth transport mechanism 55 of the IF area A3 is arranged adjacent to the liquid processing unit 6 in the single wafer area A4.

[0128] In the substrate processing system 1A according to the second embodiment, the second receiver 93A of the unloading area A5 is arranged in the single wafer area A4. The fourth transport mechanism 55, the liquid processor 6, and the second receiver 93A are arranged in this order along the X-axis direction.

[0129] As shown in Fig. 10, the second placement unit 93A is provided with a plurality of placement tables 94, 95, and 96 and an eighth transport mechanism 97. The plurality of placement tables 94, 95, and 96 are arranged on both sides of the eighth transport mechanism 97. In the example shown in Fig. 10, three placement tables 96 and one placement table 95 are arranged in this order from the bottom up in the height direction (Z-axis direction) on the negative Y-axis side of the eighth transport mechanism 97. Also, in the example shown in Fig. 10, two placement tables 94 and one placement table 95 are arranged in this order from the bottom up in the height direction on the positive Y-axis side of the eighth transport mechanism 97.

[0130] The mounting table 94 is adjacent to the unloading port 94a from the single wafer area A4, and a carrier C accommodating a wafer W to be unloaded from the single wafer area A4 is placed on the mounting table 94. An empty carrier C that has been unloaded from the outside is placed on the mounting table 95. An empty carrier C before being placed on the mounting table 94 is temporarily placed on the mounting table 96, for example.

[0131] The eighth transport mechanism 97 transports the carrier C between the multiple mounting tables 94, 95, and 96. Specifically, the eighth transport mechanism 97 includes a rail 97a extending along the height direction (Z-axis direction) and a holder 97b that holds the carrier C. The holder 97b is movable along the rail 97a.

[0132] The eighth transfer mechanism 97 holds an empty carrier C placed on the mounting table 95 using a holder 97b and transfers it to the mounting table 94 or the mounting table 96. A processed wafer W is placed in the carrier C placed on the mounting table 94 by the fifth transfer mechanism 8 arranged in the single wafer area A4. The carrier C containing the processed wafer W is transferred to the mounting table 95 or the mounting table 96 by the eighth transfer mechanism 97.

[0133] In this way, in the substrate processing system 1A according to the second embodiment, the second placement section 93A is arranged in the single wafer area A4, so that the footprint, which is the proportion of the floor area of ​​the substrate processing system 1A to that of a clean room or the like, can be kept small.

[0134] (Third embodiment) Next, the configuration of a substrate processing system according to a third embodiment will be described with reference to Fig. 11. Fig. 11 is a schematic side view of the substrate processing system according to the third embodiment.

[0135] 11, the substrate processing system 1B according to the third embodiment further includes a carrier transfer area A6 in addition to the configuration of the substrate processing system 1 according to the second embodiment. The carrier transfer area A6 is disposed above the loading area A1, the batch area A2, the IF area A3, the single wafer area A4, and the unloading area A5.

[0136] A ninth transport mechanism 500 (an example of a carrier transport mechanism) is disposed in the carrier transport area A6. The ninth transport mechanism 500 transports the carriers C between the first receiver 20A and the second receiver 93A.

[0137] The ninth transport mechanism 500 includes a holder 501, rails 502, and a moving unit 503. The holder 501 holds a carrier C. The rails 502 extend from a position above the first receiver 20A to a position above the second receiver 93A. The moving unit 503 moves the holder 501 along the rails 502.

[0138] In the substrate processing system 1B according to the third embodiment, for example, an empty carrier C placed on the mounting table 26 is transported from the first mounting section 20A to the second mounting section 93A using the ninth transfer mechanism 500, and then placed on the mounting table 95 of the second mounting section 93A. The movement of the carrier C from the mounting table 26 to the ninth transfer mechanism 500 may be performed by, for example, the seventh transfer mechanism 25 or a dedicated transfer mechanism (not shown). Similarly, the movement of the carrier C from the ninth transfer mechanism 500 to the mounting table 95 may be performed by, for example, the eighth transfer mechanism 97 or a dedicated transfer mechanism (not shown). The empty carrier C transported to the second mounting section 93A contains a processed wafer W.

[0139] Furthermore, in the substrate processing system 1B according to the third embodiment, the carrier C accommodating the processed wafers W is transported from the second mounting portion 93A to the first mounting portion 20A using the ninth transport mechanism 500, and placed on the mounting table 26 of the first mounting portion 20A. The carrier C placed on the mounting table 26 is then carried out to the outside of the substrate processing system 1B.

[0140] According to the substrate processing system 1B, even though the first platform 20A and the second platform 93A are located at different locations, the locations for external access to the substrate processing system 1B can be concentrated in one location (for example, the first platform 20A), thereby improving the convenience of the substrate processing system 1B.

[0141] (Other variations) 12 is a schematic plan view of the single-sheet area A4 according to the modified example. As shown in FIG. 12, the single-sheet area A4 includes a plurality of (here, two) liquid processing units 6, a plurality of (here, two) drying processing units 7, and a plurality of (here, two) supply units 73.

[0142] The liquid processing unit 6, the drying processing unit 7, and the supply unit 73 are arranged one on each of the positive Y-axis side and the negative Y-axis side of the fifth transport mechanism 8. The liquid processing unit 6, the drying processing unit 7, and the supply unit 73 are also aligned along the X-axis direction and arranged in this order from the negative X-axis side.

[0143] Furthermore, fourth transfer mechanism 55 is disposed in the center of IF area A3. This allows fourth transfer mechanism 55 to easily access two liquid processing sections 6. Liquid processing section 6 is provided with a transfer port 63 at a position opposite fifth transfer mechanism 8, and fourth transfer mechanism 55 transfers wafers W into liquid processing section 6 through this transfer port 63.

[0144] In this way, single wafer area A4 may be provided with a plurality of liquid processing units 6 and drying processing units 7. Furthermore, liquid processing units 6 and drying processing units 7 may be arranged in the same direction as areas A1 to A5 are arranged.

[0145] In the above-described embodiment, an etching process in which wafers W are etched using an etching liquid containing phosphoric acid or the like is exemplified as a process performed by a batch processing unit. However, the process performed by a batch processing unit is not limited to the etching process exemplified above. Furthermore, in the above-described embodiment, a liquid film formation process using a drying processing liquid and a drying process using a supercritical fluid are exemplified as processes performed by a single-wafer processing unit. However, the process performed by a single-wafer processing unit is not limited to these liquid film formation processes and drying processes. For example, the process performed by a single-wafer processing unit may be a process in which wafers W are processed using a processing liquid such as a chemical liquid, a rinse liquid, or functional water. Furthermore, in the above-described embodiment, an example is given in which a drying process is performed in the drying processing unit 7 separate from the liquid processing unit 6. However, for example, the wafers W may be dried by rotating them at high speed in the liquid processing unit 6.

[0146] In the above-described embodiment, the loading area A1, batch area A2, IF area A3, single-substrate area A4, and unloading area A5 are arranged in a straight line, but the areas A1 to A5 do not necessarily have to be arranged in a straight line. For example, the loading area A1, batch area A2, IF area A3, single-substrate area A4, and unloading area A5 may be arranged in an L-shape or a U-shape.

[0147] As described above, the substrate processing system according to the embodiment (for example, the substrate processing system 1, 1A, or 1B) includes a loading section (for example, a loading area A1), a batch processing section (for example, a pre-processing section 4_1, an etching processing section 4_2, and a post-processing section 4_3), a single wafer processing section (for example, a liquid processing section 6 and a drying processing section 7), an interface section (for example, a fourth transfer mechanism), and an unloading section (for example, an unloading area A5). The loading section includes a first mounting section (for example, the first mounting section 20 or 20A) on which a carrier (for example, a carrier C) containing a plurality of substrates (for example, wafers W) is mounted. The batch processing section processes a lot including a plurality of substrates at a time. The single wafer processing section processes each substrate included in the lot. The interface section transfers each substrate between the batch processing section and the single wafer processing section. The unloading unit includes a second platform (e.g., second platform 93, 93A) on which carriers accommodating substrates processed in the single-wafer processing unit are placed. The loading unit, batch processing unit, interface unit, single-wafer processing unit, and unloading unit are arranged in this order. Therefore, in a substrate processing system equipped with both a batch processing unit and a single-wafer processing unit, ease of substrate transport control can be improved.

[0148] The substrate processing system according to the embodiment may include a lot transfer mechanism (for example, the third transfer mechanism 50) that transfers a lot to the batch processing unit. The interface unit may also remove a substrate included in the lot that has been transferred to the batch processing unit by the lot transfer mechanism and processed by the batch processing unit from the batch processing unit and transfer it to the single wafer processing unit.

[0149] The substrate processing system according to the embodiment may include a plurality of batch processing units. The plurality of batch processing units may include a first batch processing unit (for example, an etching processing unit 4_2) and a second batch processing unit (for example, a post-processing unit 4_3) adjacent to the interface unit that processes the lots processed by the first batch processing unit in a batch. The lot transport mechanism may remove a lot from the first batch processing unit and transport it to the second batch processing unit, and the interface unit may remove a substrate from the second batch processing unit and transport it to the single-wafer processing unit.

[0150] In this way, the lot transport mechanism according to the embodiment does not need to transport substrates from the batch processing section to the single wafer processing section, which makes it possible to easily control the transport of substrates.

[0151] The substrate processing system according to the embodiment may include a single wafer transport mechanism (for example, the fifth transport mechanism 8) that transports the substrate after being processed by the single wafer processing section to the unloading section.

[0152] The single wafer processing section may be provided with an inlet (for example, inlet 61) through which substrates are loaded, located opposite the interface section, and an outlet (for example, outlet 62) through which substrates are loaded, located opposite the single wafer transport mechanism. This allows substrates to be loaded and unloaded efficiently into and from the single wafer processing section.

[0153] The substrate processing system according to the embodiment may include a plurality of single wafer processing units. The plurality of single wafer processing units may include a first single wafer processing unit (e.g., liquid processing unit 6) to which substrates are transferred from the interface unit, and a second single wafer processing unit (e.g., drying processing unit 7) that processes substrates processed by the first single wafer processing unit. In this case, the single wafer transport mechanism may remove the substrate from the first single wafer processing unit and transport it to the second single wafer processing unit, and then remove the substrate from the second single wafer processing unit and transport it to the unloading unit.

[0154] The substrate processing system according to the embodiment may include a carrier transport mechanism (e.g., the ninth transport mechanism 500) that transports carriers from the first platform to the second platform. The carrier transport mechanism may also transport carriers containing substrates processed by the batch processing unit and the single wafer processing unit from the second platform to the first platform. This can improve the convenience of the substrate processing system.

[0155] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0156] 1: Substrate processing system 2: Carrier loading area 3: Lot formation section 4_1: Preprocessing section 4_2: Etching processing section 4_3: Post-processing section 6: Liquid processing section 7: Drying processing section 8: Fifth transport mechanism 11: Control device 12: Control section 13: Storage section 20: First placement section 21: First conveying mechanism 22,23: Career stock 24: Carrier mounting table 25: 7th transport mechanism 30: Second transport mechanism 31: Lot holding section 40, 41, 43, 44, 47, 48: Treatment tank 42, 45, 46, 49: Lot immersion mechanism 50: Third transport mechanism 55: Fourth transport mechanism 91: Wafer placement table 92: 6th transport mechanism 93: Second placement section 94: Mounting table 95: Mounting table 96: Mounting table 97: 8th transport mechanism A1: Loading area A2: Batch area A3:IF area A4: Sheet area A5: Unloading area A6: Carrier transport area C: Career W: Wafer

Claims

1. a loading section including a first loading section on which a carrier containing a plurality of substrates is placed; a batch processing unit that processes a lot including a plurality of the substrates at once; a plurality of single wafer processing sections for processing the substrates included in the lot one by one; an interface unit that transfers the substrates one by one between the batch processing unit and the single wafer processing unit; a carrying-out section including a second placement section on which a carrier accommodating a substrate processed in the single-wafer processing section is placed; Equipped with the loading unit, the batch processing unit, the interface unit and the plurality of single wafer processing units, and the unloading unit are arranged in this order; The batch processing unit immerses the lot in a processing tank containing a processing solution, The plurality of single wafer processing sections include: a liquid processing section into which the substrate having the processing liquid attached thereto is carried from the interface section and into which a liquid film is formed on the surface of the substrate; a drying processing section that brings the substrate, on whose surface the liquid film has been formed by the liquid processing section, into contact with a supercritical fluid to dry the substrate; Including, The interface unit is arranged in a single wafer area where the plurality of single wafer processing units are arranged, and is adjacent to the liquid processing unit, and passes the substrates processed by the batch processing unit to the liquid processing unit with the processing liquid attached thereto.

2. 2. The substrate processing system according to claim 1, wherein the interface unit removes one of the substrates included in the lot processed by the batch processing unit from inside the processing bath and transfers it to the liquid processing unit.

3. the treatment liquid is DIW (deionized water), 3. The substrate processing system of claim 1, wherein the liquid processing unit includes a spin chuck that holds the substrate, and while rotating the spin chuck, supplies IPA (isopropyl alcohol) to the upper and lower surfaces of the substrate, thereby replacing DIW remaining on both surfaces of the substrate with IPA and forming a liquid film of IPA on the upper surface of the substrate.

4. a single-wafer transport mechanism for transporting the substrate processed by the liquid processing section out of the liquid processing section; Equipped with The liquid processing unit includes: an inlet provided at a position opposite to the interface section, through which the substrate having the processing liquid attached thereto is carried; an unloading port provided at a position opposite to the single wafer transport mechanism, through which the substrate processed by the liquid processing unit is unloaded; 4. The substrate processing system according to claim 1, comprising:

5. a plurality of the batch processing units; The plurality of batch processing units include: a first batch processing unit; a second batch processing unit adjacent to the interface unit for collectively processing the lots processed by the first batch processing unit; Including, The interface unit removing one of the substrates from the processing bath provided in the second batch processing unit and transporting it to the liquid processing unit; 5. The substrate processing system according to claim 1, wherein the liquid processing section is disposed on the opposite side of the interface section from the processing bath included in the second batch processing section.

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