Substrate processing apparatus and substrate processing method

Abstract

This substrate processing device comprises: a substrate clamping unit that clamps a substrate; a supply unit the supplies a fluid to the inside of the substrate clamping unit; a suction unit that suctions the fluid from the inside of the substrate clamping unit; a first transport unit that holds the substrate from the side opposite from the substrate clamping unit; and a control unit that controls the supply unit, the suction unit, and the first transport unit. The control unit performs: control for holding the substrate that is clamped by the substrate clamping unit with the first transport unit from the side opposite from the substrate clamping unit; control for supplying a liquid to the inside of the substrate clamping unit; control for moving the first transport unit a set distance so as to separate the substrate from the substrate clamping unit by the set distance; and control for suctioning, to the inside of the substrate clamping unit, the liquid that remains between the substrate clamping unit and the substrate, in a state where the substrate is separated from the substrate clamping unit by the set distance.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The substrate grinding system described in Patent Document 1 includes a grinding device that grinds substrates and a cleaning device that cleans the substrates after grinding by the grinding device. The grinding device has a chuck that holds the substrate by suction. The substrate is ground while being held by the chuck. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Registered Utility Model No. 3227448 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for supplying liquid to the inside of a substrate suction portion such as a chuck, and reducing the amount of liquid remaining on the surface of the substrate facing the substrate suction portion after the substrate is removed from the substrate suction portion by the pressure of the liquid. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a substrate suction unit that suctions a substrate, a supply unit that supplies a fluid into the substrate suction unit, a suction unit that sucks the fluid from inside the substrate suction unit, a first transport unit that holds the substrate from an opposite side to the substrate suction unit, and a control unit that controls the supply unit, the suction unit, and the first transport unit. The control unit controls the first transport unit to hold the substrate suctioned by the substrate suction unit from the opposite side to the substrate suction unit, to supply a liquid into the substrate suction unit, to move the first transport unit a set distance to separate the substrate from the substrate suction unit a set distance, and to suck the liquid remaining between the substrate suction unit and the substrate into the substrate suction unit while the substrate is separated from the substrate suction unit by the set distance. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, it is possible to reduce the amount of liquid remaining on the surface of the substrate facing the substrate suction portion. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is a flowchart showing a substrate processing method according to an embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing a substrate holding mechanism according to an embodiment. [Figure 5] FIG. 5 is a flowchart showing an example of step S102. [Figure 6] Figure 6(A) is a cross-sectional view showing an example of step S204, Figure 6(B) is a cross-sectional view showing an example of step S205, Figure 6(C) is a cross-sectional view showing an example of step S207, Figure 6(D) is a cross-sectional view showing an example of the first stage of step S208, and Figure 6(E) is a cross-sectional view showing an example of the second stage of step S208. [Figure 7]FIG. 7 is a cross-sectional view showing an example of the cleaning unit, and is a cross-sectional view showing an example of a state in which a substrate is held by a substrate holder. [Figure 8] FIG. 8 is a cross-sectional view showing an example of the cleaning unit, showing an example of a state in which a substrate is held by a pair of suction pads. [Figure 9] FIG. 9 is a cross-sectional view showing an example of the waiting section. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] First, a substrate processing apparatus 1 according to one embodiment will be described with reference to Figures 1 and 2. The substrate processing apparatus 1 processes a substrate W and cleans the processed substrate W. The substrate processing apparatus 1 includes, for example, a load / unload block 2, a cleaning block 3, and a processing block 5. The load / unload block 2, the cleaning block 3, and the processing block 5 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.

[0010] The carry-in / out block 2 includes a mounting section 21 on which a cassette C is placed. The cassette C accommodates a plurality of substrates W. The substrates W include semiconductor substrates such as silicon wafers or compound semiconductor wafers. The substrates W may further include a device layer formed on the surface of the semiconductor substrate. The device layer includes, for example, an electronic circuit. The substrates W may include a glass substrate instead of a semiconductor substrate.

[0011] The cleaning block 3 includes, for example, cleaning units 31A and 31B that clean the substrate W after processing, etching units 32A and 32B that etch the substrate W after cleaning, an inversion unit 34 that inverts the substrate W, and a transition unit 35 that relays the substrate W. The cleaning block 3 also includes a second transport unit 36 ​​and a third transport unit 37.

[0012] When viewed from above, the second transport unit 36 ​​and the third transport unit 37 are provided on a diagonal line of the rectangular cleaning block 3. The second transport unit 36 ​​is adjacent to the processing block 5, but is not adjacent to the carry-in / out block 2. In contrast, the third transport unit 37 is adjacent to the carry-in / out block 2, but is not adjacent to the processing block 5.

[0013] The second transport section 36 transports the substrate W between a plurality of devices adjacent to the second transport section 36. The second transport section 36 has a transport arm that holds the substrate W. The transport arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotating about a vertical axis.

[0014] The third transport unit 37 transports the substrate W between a plurality of devices adjacent to the third transport unit 37. The third transport unit 37 has a transport arm that holds the substrate W. The transport arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotating about a vertical axis.

[0015] The processing block 5 includes a processing unit 50 that processes the substrate W. The processing unit 50, for example, grinds the substrate W. Grinding includes polishing. The processing unit 50 includes, for example, four holders 52A, 52B, 52C, and 52D that hold the substrate W, and two tool drivers 53A and 53B that drive a tool D that is pressed against the substrate W. The tool drivers 53A and 53B rotate and raise and lower the tool D.

[0016] The processing unit 50 may further include a turntable 51 that is rotated about a rotation center line R1. The four holders 52A to 52D are rotated together with the turntable 51. The four holders 52A to 52D are provided at intervals around the rotation center line R1 of the turntable 51 and are simultaneously rotated about the rotation center line R1. The four holders 52A to 52D are independently rotated about their respective rotation center lines R2.

[0017] The two holders 52A, 52C are disposed symmetrically about the rotation center line R1 of the turntable 51. Each holder 52A, 52C moves between a first load / unload position A3, where the substrate W is loaded and unloaded by a first transport unit 54, and a first processing position A1, where the substrate W is processed by one tool driving unit 53A. The two holders 52A, 52C move between the first load / unload position A3 and the first processing position A1 every time the turntable 51 rotates 180°. At the first processing position A1, a nozzle 59 (see FIG. 2) supplies a processing liquid such as water to the upper surface of the substrate W when the substrate W is processed.

[0018] The other two holders 52B, 52D are arranged symmetrically about the rotation center line R1 of the turntable 51. Each of the holders 52B, 52D moves between a second load / unload position A0, where the first transport unit 54 loads and unloads the substrate W, and a second processing position A2, where the substrate W is processed by another tool drive unit 53B. The other two holders 52B, 52D move between the second load / unload position A0 and the second processing position A2 every time the turntable 51 rotates 180°. At the second processing position A2, a nozzle (not shown) supplies a processing liquid such as water to the upper surface of the substrate W when the substrate W is processed.

[0019] When viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 are arranged in this order in a counterclockwise direction. In this case, when viewed from above, the holding portions 52A, 52B, 52C, and 52D are arranged in this order at 90° intervals in a counterclockwise direction.

[0020] The positions of the first loading / unloading position A3 and the second loading / unloading position A0 may be reversed, and the positions of the first processing position A1 and the second processing position A2 may also be reversed. That is, when viewed from above, the first loading / unloading position A3, the second loading / unloading position A0, the first processing position A1, and the second processing position A2 may be arranged in this order clockwise. In this case, when viewed from above, the holding units 52A, 52B, 52C, and 52D are arranged in this order at 90° intervals clockwise.

[0021] However, the number of holding units is not limited to four, and the number of tool driving units is not limited to two. Also, the rotary table 51 may be omitted. Instead of the rotary table 51, a slide table may be provided.

[0022] The processing block 5 is equipped with a first transport unit 54 that transports the substrate W inside the processing block 5. The first transport unit 54 includes a suction pad that holds the substrate W. The suction pad is capable of movement in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotation about a vertical axis.

[0023] The processing block 5 includes waiting sections 57A, 57B, and 57C (see FIG. 2) for temporarily waiting the substrate W. The waiting sections 57A, 57B, and 57C relay the substrate W between the first transport section 54 and the second transport section 36. The waiting sections 57A and 57B relay the substrate W from the second transport section 36 to the first transport section 54. The waiting section 57C relays the substrate W from the first transport section 54 to the second transport section 36.

[0024] The waiting sections 57A and 57B also serve as alignment sections that adjust the center position of the substrate W. The alignment sections align the center position of the substrate W to a desired position using a guide or the like. This allows the rotation center line R2 of each of the holders 52A to 52D to coincide with the center of the substrate W when the first transport section 54 transfers the substrate W to each of the holders 52A to 52D.

[0025] The alignment unit may detect the center position of the substrate W using an optical system or the like. The alignment unit may also detect the crystal orientation of the substrate W using an optical system or the like, and more specifically, may detect a notch representing the crystal orientation of the substrate W. In a rotating coordinate system that rotates together with each of the holders 52A to 52D, the crystal orientation of the substrate W can be aligned to a desired orientation.

[0026] The processing block 5 may include an inversion unit 58 (see FIG. 2) that inverts the substrate W. The inversion unit 58, the standby unit 57C, the standby unit 57B, and the standby unit 57A are stacked from top to bottom in this order. Note that the stacking order is not particularly limited.

[0027] The reversing unit 58 also serves as a waiting unit where the substrate W temporarily waits on the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. The reversing unit 58 relays the substrate W from the first transport unit 54 to the second transport unit 36. Note that although the reversing unit 58 also serves as a waiting unit, the reversing unit 58 and the waiting unit may be provided separately.

[0028] The substrate processing apparatus 1 further includes a control unit 9. The control unit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A unit control unit that controls the operation of each unit constituting the substrate processing apparatus 1 may be provided, and a system control unit that controls multiple unit control units may be provided. The control unit 9 may be configured with the unit control units and the system control unit.

[0029] Next, a substrate processing method according to one embodiment will be described with reference to Fig. 3. The substrate processing method includes, for example, steps S101 to S110 shown in Fig. 3. Steps S101 to S110 are performed under the control of a control unit 9. Note that the substrate processing method does not need to include all of the steps shown in Fig. 3, and may include steps not shown in Fig. 3.

[0030] First, the third transport unit 37 takes out the substrate W from the cassette C and transports it to the transition unit 35. Then, the second transport unit 36 ​​takes out the substrate W from the transition unit 35 and transports it to the standby unit 57A. The substrate W has a first main surface and a second main surface facing oppositely, and is transported with the first main surface facing upward.

[0031] Next, the standby section 57A adjusts the center position of the substrate W (step S101). Thereafter, the first transport section 54 takes the substrate W from the standby section 57A and transports it to a holder (e.g., holder 52C) located at the first load / unload position A3. The substrate W is placed on the holder 52C with its first main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52C. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first load / unload position A3 to the first processing position A1.

[0032] Next, the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first processing position A1 to the first carry-in / out position A3. Subsequently, the first transport unit 54 removes the substrate W from the holder 52C located at the first carry-in / out position A3 and transports it to the inverting unit 58.

[0033] Next, the inverting unit 58 inverts the substrate W (step S103). The substrate W is inverted upside down so that the first main surface faces downward and the second main surface faces upward. Thereafter, the second transport unit 36 ​​takes out the substrate W from the inverting unit 58 and transports it to the cleaning unit 31A.

[0034] Next, the cleaning unit 31A cleans the first main surface of the substrate W (step S104). Particles such as processing debris can be removed by the cleaning unit 31A. The cleaning unit 31A, for example, scrubs the substrate W. The cleaning unit 31A may clean not only the first main surface of the substrate W but also the second main surface. After the substrate W is dried, the second transport unit 36 ​​removes the substrate W from the cleaning unit 31A and transports it to the standby unit 57B.

[0035] Next, the standby section 57B adjusts the center position of the substrate W (step S105). Thereafter, the first transport section 54 takes the substrate W from the standby section 57B and transports it to a holder (e.g., holder 52D) located at the second load / unload position A0. The substrate W is placed on the holder 52D with its second main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52D. Thereafter, the turntable 51 is rotated 180°, and the holder 52D is moved from the second load / unload position A0 to the second processing position A2.

[0036] Next, the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106). Thereafter, the turntable 51 is rotated 180°, and the holder 52D is moved from the second processing position A2 to the second carry-in / out position A0. Next, the first transport unit 54 removes the substrate W from the holder 52D located at the second carry-in / out position A0 and transports it to the standby unit 57C. Thereafter, the second transport unit 36 ​​removes the substrate W from the standby unit 57C and transports it to the cleaning unit 31B.

[0037] Next, the cleaning unit 31B cleans the second main surface of the substrate W (step S107). Particles such as processing debris can be removed by the cleaning unit 31B. The cleaning unit 31B, for example, scrubs the substrate W. The cleaning unit 31B may clean not only the second main surface of the substrate W but also the first main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the cleaning unit 31B and transports it to the etching unit 32B.

[0038] Next, the etching unit 32B etches the second main surface of the substrate W (step S108). The etching unit 32B can remove processing marks on the second main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32B and transports it to the reversing unit 34.

[0039] Next, the inverting unit 34 inverts the substrate W (step S109). The substrate W is inverted upside down so that the first main surface faces upward and the second main surface faces downward. Thereafter, the third transport unit 37 removes the substrate W from the inverting unit 34 and transports it to the etching unit 32A.

[0040] Next, the etching unit 32A etches the first main surface of the substrate W (step S110). Processing marks on the first main surface can be removed by the etching unit 32A. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32A and stores it in the cassette C. Thereafter, the current process ends.

[0041] 3, the substrate processing method has been described with a focus on one substrate W. The substrate processing apparatus 1 may simultaneously perform multiple processes at multiple positions to improve throughput. For example, the substrate processing apparatus 1 simultaneously processes the substrate W at each of the first processing position A1 and the second processing position A2. Meanwhile, the substrate processing apparatus 1 performs, for example, spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, unloading the substrate W, cleaning of the substrate suction surface (upper surface) of the holder, and loading of the substrate W, in this order, at each of the first load / unload position A3 and the second load / unload position A0.

[0042] Thereafter, the substrate processing apparatus 1 rotates the turntable 51 by 180°. Subsequently, the substrate processing apparatus 1 simultaneously processes the substrate W again at each of the first processing position A1 and the second processing position A2. Meanwhile, the substrate processing apparatus 1 again performs spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, unloading the substrate W, cleaning the substrate suction surface (upper surface) of the holder, and loading the substrate W, in this order, at each of the first load / unload position A3 and the second load / unload position A0.

[0043] It should be noted that although the processing unit 50 in this embodiment is a grinding unit that grinds the substrate W, the technology of the present disclosure is not limited to this. The processing unit 50 may also be a cutting unit that cuts the substrate W protected by a protective member, a cutting unit that cuts the substrate W, or the like. When the processing unit 50 is a grinding unit, a grindstone or the like is used as the tool D. When the processing unit 50 is a cutting unit, a blade or the like is used as the tool D. When the processing unit 50 is a cutting unit, an end mill or the like is used as the tool D.

[0044] Next, a substrate holding mechanism 60 according to one embodiment will be described with reference to Figures 4 to 6. The substrate holding mechanism 60 is used in the processing unit 50. As shown in Figure 4, the substrate holding mechanism 60 includes, for example, a substrate adsorption unit 61, a suction unit 62, and a supply unit 63.

[0045] The substrate suction portion 61 suctions the substrate W. The substrate suction portion 61 is, for example, a vacuum chuck, and has a porous body 611 that vacuum-sucks the substrate W, and a holder 612 that holds the porous body 611. The porous body 611 has a suction surface that suctions the substrate W. The substrate suction portion 61 is not particularly limited, but is used, for example, as the holders 52A to 52D shown in FIG. 1 etc.

[0046] The suction unit 62 sucks the fluid from inside the substrate suction unit 61. The suction unit 62 includes a valve that switches between suction and stopping of fluid suction under the control of the control unit 9. The valve is connected to a suction source for the fluid. The suction unit 62 does not include a suction source, but may include a suction source. When there are multiple types of fluid, a valve may be provided for each type of fluid, or a common valve may be provided.

[0047] The suction unit 62 sucks gas from, for example, the inside of the porous body 611. As a result, the pressure in the porous body 611 is reduced to a pressure lower than atmospheric pressure, and the porous body 611 vacuum-adsorbs the substrate W. Thereafter, the suction unit 62 stops sucking gas, and when the pressure in the porous body 611 returns to atmospheric pressure, the vacuum adsorption force disappears.

[0048] The substrate attracting portion 61 is not limited to a vacuum chuck and may be, for example, an electrostatic chuck. The electrostatic chuck has an insulating substrate and an electrode (not shown). An electric charge supplying portion (not shown) supplies an electric charge to the electrode, thereby generating an electrostatic attracting force. An electric charge discharging portion (not shown) discharges an electric charge from the electrode, thereby dissipating the electrostatic attracting force.

[0049] When the substrate W is processed, the substrate W is adsorbed to the substrate adsorption portion 61. When the substrate W is processed, a processing liquid such as water is supplied to the substrate W for the purposes of reducing frictional resistance, cooling, preventing adhesion of processing debris, etc. The processing liquid penetrates between the substrate adsorption portion 61 and the substrate W.

[0050] The supply unit 63 supplies fluid to the inside of the substrate suction unit 61. The supply unit 63 includes a valve that switches between supplying and stopping the fluid under the control of the control unit 9. The valve is connected to a fluid supply source. The supply unit 63 does not include a supply source, but may include a supply source. When there are multiple types of fluid, an open / close valve may be provided for each type of fluid, or a common valve may be provided.

[0051] To remove the substrate W after processing, the supply unit 63 supplies liquid L into the substrate adsorption unit 61 and pushes the substrate W with the pressure of the liquid L (see Figures 6(B) and 6(C)). The liquid L is, for example, water. The supply unit 63 may supply a mixed fluid of liquid L and gas into the substrate adsorption unit 61 and may push the substrate W with the pressure of the mixed fluid. The gas is, for example, air.

[0052] The supply unit 63 supplies the liquid L, for example, into the porous body 611, and presses the substrate W by the pressure of the liquid L. If the substrate attracting unit 61 is an electrostatic chuck, a plurality of holes may be formed in the attracting surface of the electrostatic chuck, and the supply unit 63 may supply the liquid L to the holes. In either case, the substrate W can be pressed by the pressure of the liquid L.

[0053] The substrate W is peeled off from the substrate suction portion 61 by the pressure of the liquid L, and is transferred from the substrate suction portion 61 to the first transport portion 54. Utilizing the pressure of the liquid L is particularly effective when grinding the substrate W. When grinding the substrate W, the tool D presses the substrate W against the substrate suction portion 61. As a result, the substrate W is tightly attached to the substrate suction portion 61.

[0054] The suction unit 62 sucks the liquid L remaining between the substrate adsorption unit 61 and the substrate W into the inside of the substrate adsorption unit 61 (see FIGS. 6(D) and 6(E)). This reduces the amount of liquid L remaining on the substrate W after the substrate W is pressed by the pressure of the liquid L to remove it from the substrate adsorption unit 61. This prevents the liquid L from scattering inside the substrate processing apparatus 1 during subsequent transport of the substrate W.

[0055] It is also possible to use a sponge roller or the like instead of the suction unit 62 in order to reduce the amount of liquid L remaining on the substrate W. The sponge roller is provided, for example, beside the substrate suction unit 61, and removes the liquid L remaining on the substrate W along the transport path of the substrate W. According to this embodiment, the liquid L is removed from the substrate W above the substrate suction unit 61, so there is no need to secure a dedicated space along the transport path of the substrate W. Furthermore, according to this embodiment, it is possible to save the effort of cleaning the sponge roller.

[0056] Next, an example of step S102 in Fig. 3 will be described with reference to Fig. 5 and Fig. 6. Step S106 in Fig. 3 is performed in the same manner as step S102, and therefore description thereof will be omitted. Step S102 includes, for example, steps S201 to S209, as shown in Fig. 5. Steps S201 to S209 are performed under the control of the control unit 9.

[0057] First, the first transport unit 54 carries the substrate W into the processing unit 50 (step S201). Next, the substrate suction unit 61 in the processing unit 50 adsorbs the substrate W (step S202). Thereafter, the first transport unit 54 exits the processing unit 50. With the substrate suction unit 61 adsorbing the substrate W, the processing unit 50 processes the substrate W (step S203).

[0058] Next, the first transport unit 54 enters the processing unit 50 and is placed on the substrate W as shown in FIG. 6(A). Thereafter, the first transport unit 54 holds the substrate W from the opposite side (e.g., the upper side) from the substrate suction unit 61 (step S204). The first transport unit 54 has, for example, a suction pad 54a that suctions the substrate W. The suction pad 54a only needs to suction the central part of the upper surface of the substrate W, and does not need to suction the outer periphery of the upper surface of the substrate W.

[0059] The substrate suction portion 61 suctions the substrate W so that the substrate W does not shift when the first transport unit 54 suctions the substrate W. Both the substrate suction portion 61 and the first transport unit 54 suction the substrate W. After that, the suction portion 62 stops suctioning the gas, and the substrate suction portion 61 stops suctioning the substrate W. Then, only the first transport unit 54 suctions the substrate W. Note that the first transport unit 54 may hold the substrate W with a mechanical chuck instead of the suction pads 54a.

[0060] 6(B), the supply unit 63 supplies the liquid L into the substrate suction portion 61, and the pressure of the liquid L pushes the substrate W upward (step S205). At this time, the first transport unit 54 presses the substrate W from the side opposite the substrate suction portion 61 to prevent the substrate W from being blown away. The liquid L leaks out sideways from between the substrate suction portion 61 and the substrate W.

[0061] Next, the control unit 9 determines whether the substrate W is held by the first transport unit 54 (step S206). For example, when the first transport unit 54 vacuum-sucks the substrate W, the pressure sensor 82 detects a pressure that represents the vacuum suction force. The control unit 9 makes a determination based on the detection value of the pressure sensor 82. If the substrate W is vacuum-sucked to the first transport unit 54 and there is no vacuum leak, the pressure will be below the threshold value.

[0062] If it is determined in step S206 that the substrate W is not held by the first transporter 54, for example, the processes from step S204 onwards are performed again. Alternatively, the processing of the substrate W may be interrupted and maintenance of the substrate processing apparatus 1 may be performed.

[0063] If it is determined in step S206 that the substrate W is held by the first transporter 54, the first transporter 54 is raised as shown in Fig. 6(C). As a result, the substrate W is moved away from the substrate adsorption portion 61 (step S207). A gap is formed between the substrate adsorption portion 61 and the substrate W. The size of the gap is equal to the amount of lift of the substrate W. The greater the amount of lift of the substrate W, the larger the size of the gap.

[0064] By step S208, which will be described later, the substrate W has been raised a set distance D0, and the substrate W is separated from the substrate adsorption portion 61 by the set distance D0. In this state, the space between the substrate W and the substrate adsorption portion 61 is filled with a film of liquid L. The set distance D0 is determined taking into consideration factors such as the suction time of the liquid L in step S208. The larger the set distance D0, the more liquid L remains, the longer the suction time of the liquid L, and the lower the throughput. However, if the set distance D0 is too small, there is a risk that the substrate W will come into contact with the substrate adsorption portion 61 due to the suction force.

[0065] Next, with the substrate W spaced a set distance D0 from the substrate suction section 61, the supply section 63 stops supplying the liquid L, and the suction section 62 sucks the liquid L, as shown in Figures 6(D) and 6(E) (step S208). Because the substrate W is held by the first transport section 54, the cessation of the supply of the liquid L or the suction does not cause the substrate W to fall.

[0066] The suction unit 62 sucks the liquid L remaining between the substrate suction unit 61 and the substrate W into the inside of the substrate suction unit 61. This reduces the amount of liquid L remaining on the substrate W. This prevents the liquid L from scattering during subsequent transport of the substrate W, and keeps the inside of the substrate processing apparatus 1 clean. As shown in FIG. 6(E), a small amount of liquid L may remain on the substrate W.

[0067] 6(D), the film of liquid L is drawn from the radially outer side to the radially inner side of the substrate W while contacting both the substrate W and the substrate suction portion 61. The diameter of the film of liquid L on the suction surface of the substrate suction portion 61 decreases over time. During this time, the size of the gap between the substrate suction portion 61 and the substrate W remains constant. The phenomenon in which the diameter of the film of liquid L gradually decreases is thought to occur when the suction surface of the substrate suction portion 61 is formed of a porous body 611.

[0068] Finally, the first transporter 54 moves horizontally while holding the substrate W, exits the processing section 50, and carries the substrate W out of the processing section 50 (step S209).

[0069] The substrate processing method does not have to include all of the steps shown in Fig. 5, and may include steps not shown in Fig. 5. For example, the substrate processing method may include a step (not shown) of cleaning the substrate suction portion 61 and the substrate W after the start of step S207 and before the start of step S208. This step will be referred to as the cleaning step hereinafter.

[0070] The cleaning step includes rotating the substrate suction portion 61 while supplying the liquid L into the inside of the substrate suction portion 61. By rotating the substrate suction portion 61, the cleaning step is performed after the substrate W is separated from the substrate suction portion 61 so that the substrate suction portion 61 and the substrate W do not rub against each other. Therefore, the cleaning step is performed after the start of step S207.

[0071] In the cleaning step, only the liquid L may be supplied into the substrate adsorption portion 61, or a mixed fluid of the liquid L and gas may be supplied into the substrate adsorption portion 61. The size of the gap formed between the substrate adsorption portion 61 and the substrate W in the cleaning step may be larger, smaller, or the same as the size D0 of the gap formed in step S208.

[0072] As described above, the cleaning step includes rotating the substrate suction portion 61 while supplying the liquid L into the inside of the substrate suction portion 61. The liquid L flows from the radially inner side to the radially outer side of the substrate W due to centrifugal force while contacting both the substrate suction portion 61 and the substrate W. This allows the substrate suction portion 61 and the substrate W to be cleaned. After the cleaning step, step S208 is performed.

[0073] In step S208, the substrate suction portion 61 may be rotated, but it is preferable not to rotate the substrate suction portion 61. In the latter case, the generation of centrifugal force can be prevented. If centrifugal force is not generated, the liquid L is likely to be attracted from the radially outer side to the radially inner side of the substrate W while in contact with both the substrate W and the substrate suction portion 61.

[0074] 7 and 8, an example of the cleaning unit 31B will be described. Note that the cleaning unit 31A has the same configuration as the cleaning unit 31B, and therefore a description thereof will be omitted. The cleaning unit 31B includes, for example, a substrate holding unit 311 that holds the substrate W, a rotation mechanism 312 that rotates the substrate holding unit 311, a ring cover 314 that surrounds the periphery of the substrate W, a friction unit 315 that comes into contact with the substrate W, a movement unit 316 that moves the friction unit 315, a lower nozzle 317 that supplies a cleaning liquid to the lower surface of the substrate W, and an upper nozzle 318 that supplies a cleaning liquid to the upper surface of the substrate W.

[0075] The substrate holder 311 holds the substrate W horizontally, for example, from below. The substrate holder 311 adsorbs a first region of the substrate W. The first region is, for example, the center of the lower surface of the substrate W. The rotation mechanism 312 rotates the substrate holder 311 to rotate the substrate W.

[0076] The ring cover 314 prevents the scattering of cleaning liquid that is shaken off from the rotating substrate W. A pair of suction pads 313 (only one is shown in FIGS. 7 and 8) are provided inside the ring cover 314, sandwiching the substrate holder 311 in the Y-axis direction. The pair of suction pads 313 and the ring cover 314 are integrated and, for example, can move simultaneously in the X-axis and Z-axis directions but cannot move in the Y-axis direction.

[0077] The friction unit 315 comes into contact with, for example, the lower surface of the substrate W and rubs the lower surface of the substrate W. The friction unit 315 is a brush or a sponge. The friction unit 315 is moved in the Y-axis direction by a moving unit 316 while being rotated by a motor 319.

[0078] 7, when the substrate holder 311 is holding the first region of the underside of the substrate W by suction, the rotation mechanism 312 rotates the substrate W, and the movement unit 316 moves the friction unit 315 in the Y-axis direction. This causes the region of the underside of the substrate W outside the first region to be scrubbed.

[0079] 8, when the pair of suction pads 313 are suction-holding the underside of the substrate W, the pair of suction pads 313 and the ring cover 314 are moved in the X-axis direction by a driving unit (not shown), and the friction unit 315 is moved in the Y-axis direction by a moving unit 316. This causes a first region of the underside of the substrate W to be scrubbed.

[0080] 7 and 8, the substrate holder 311 and the pair of suction pads 313 hold the substrate W in order, allowing the friction unit 315 to scrub the entire lower surface of the substrate W. Although the friction unit 315 is disposed below the substrate W in this embodiment, it may be disposed above the substrate W, and the upper surface of the substrate W may be scrubbed. The friction unit 315 may be disposed on both the top and bottom sides of the substrate W.

[0081] The substrate W is transported from the processing unit 50 to the cleaning units 31A and 31B while wet with the liquid supplied by the processing unit 50. The reason why the substrate W is transported while wet with the liquid is that if the substrate W dries before cleaning, processing debris will adhere firmly to the substrate W, making it difficult to remove the processing debris by cleaning.

[0082] The substrates W are transported into the cleaning units 31A and 31B wet with the liquid supplied by the processing unit 50, and so bring liquid contaminated with processing debris into the cleaning units 31A and 31B. The liquid contaminated with processing debris adheres to the substrate holders 311 of the cleaning units 31A and 31B, contaminating the substrate holders 311. This then adversely affects the substrates W held by the substrate holders 311.

[0083] 9, the standby section 57C has a liquid removal section 70 that removes liquid from the first region of the substrate W. As described above, the standby section 57C temporarily waits the substrate W wet with the liquid supplied by the processing section 50 along the transport path of the substrate W from the processing section 50 to the cleaning section 31B.

[0084] The standby section 57C has, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 stand. The plurality of support pins 571 horizontally support the substrate W. A gap is formed between the substrate W and the horizontal plate 572, and at least a part of the liquid removal section 70 is disposed in this gap.

[0085] The liquid removal unit 70 dries a first region of the substrate W. The first region of the substrate W is the region that comes into contact with the substrate holding unit 311 of the cleaning unit 31B. Drying the first region of the substrate W prevents liquid contaminated with processing debris from adhering to the substrate holding unit 311 of the cleaning unit 31B, thereby preventing the substrate holding unit 311 from becoming contaminated. This allows the cleaning unit 31B to be kept clean.

[0086] The first region of the substrate W is, for example, the center of the underside of the substrate W. The center of the underside of the substrate W is an area where processing debris hardly accumulates, compared to not only the upper surface of the substrate W but also the outer periphery of the lower surface of the substrate W, so there is no problem with drying the center of the underside of the substrate W before cleaning. Note that the upper surface of the substrate W is processed, so processing debris is likely to accumulate, and processing debris that has wrapped around from the upper surface of the substrate W can accumulate on the outer periphery of the lower surface of the substrate W.

[0087] The liquid removal unit 70 only needs to remove the liquid from a portion of the substrate W, and does not need to remove the liquid from the entire substrate W. For example, the liquid removal unit 70 only needs to remove the liquid from the center of the underside of the substrate W, and does not need to remove the liquid from the periphery of the underside of the substrate W. This makes it possible to prevent processing debris from firmly adhering to the substrate W before cleaning, and allows the processing debris to be easily removed by cleaning.

[0088] The liquid removal unit 70 has, for example, a gas discharge unit 71 that discharges gas toward a first region of the substrate W. By adjusting the gas discharge direction, the gas discharge flow rate, and the like, it is possible to adjust the region of the substrate W that the gas hits, and therefore the region on the substrate W from which liquid is removed. The gas discharge unit 71 includes a nozzle 711 that discharges gas.

[0089] The nozzle 711 is, for example, vertically erected and ejects gas directly upward. The ejected gas is, for example, air. The ejected gas may be any dry gas, and may be an inert gas such as nitrogen gas. In this embodiment, there is one nozzle 711, but there may be more than one.

[0090] After hitting the center of the underside of the substrate W, the gas discharged from the nozzle 711 flows radially along the underside of the substrate W, gradually decelerating and gradually reaching atmospheric pressure. As a result, the Bernoulli effect comes into play in the gap between the nozzle 711 and the substrate W, generating negative pressure at the center of the underside of the substrate W, and the substrate W is sucked in by the negative pressure. Therefore, the substrate W is stably supported.

[0091] The gas discharge unit 71 may discharge a cleaning liquid such as water before discharging the gas. The cleaning liquid and the gas are discharged from the same nozzle 711. The first region of the substrate W can be cleaned with the cleaning liquid before being dried with the gas. This further prevents processing debris from adhering to the substrate holder 311 of the cleaning unit 31B.

[0092] The liquid removal unit 70 has a supply line 73 that supplies gas and cleaning liquid to the nozzle 711. The supply line 73 has a common line 731 and multiple branch lines 732 and 733. The common line 731 connects the nozzle 711 to the multiple branch lines 732 and 733. Note that the supply line 73 may supply only gas to the nozzle 711.

[0093] The branch line 732 connects the common line 731 and the gas supply source 74. An open / close valve 75 is provided midway along the branch line 732. When the open / close valve 75 opens the flow path of the branch line 732, the nozzle 711 discharges gas. When the open / close valve 75 closes the flow path of the branch line 732, the nozzle 711 stops discharging gas.

[0094] The branch line 733 connects the common line 731 and the cleaning liquid supply source 76. An open / close valve 77 is provided midway along the branch line 733. When the open / close valve 77 opens the flow path of the branch line 733, the nozzle 711 ejects the cleaning liquid. When the open / close valve 77 closes the flow path of the branch line 733, the nozzle 711 stops ejecting the cleaning liquid.

[0095] The liquid removal unit 70 may have an air volume amplifier 72 that uses the Coanda effect to draw gas around the gas discharge unit 71 into the flow of gas discharged by the gas discharge unit 71, thereby amplifying the volume of air blowing onto the substrate W. By using the air volume amplifier 72, a wide area of ​​the substrate W can be dried with a small gas discharge flow rate. Furthermore, floating of the substrate W due to the discharge of gas can be suppressed.

[0096] The air volume amplification section 72 has, for example, an annular portion 721 that surrounds the entire periphery of the gas discharge section 71. The annular portion 721 can take in gas from the entire periphery of the gas discharge section 71. The annular portion 721 preferably has a circular ring shape. It can take in gas evenly from the entire periphery centered on the gas discharge section 71. The annular portion 721 may also have a rectangular ring shape.

[0097] The gas discharge part 71 may protrude further toward the substrate W than the air volume amplifier 72, and may, for example, protrude upward than the air volume amplifier 72. Specifically, the nozzle 711 of the gas discharge part 71 may protrude further toward the substrate W than the annular part 721 of the air volume amplifier 72, and may, for example, protrude upward than the annular part 721.

[0098] Because the nozzle 711 protrudes further toward the substrate W than the annular portion 721, the gas discharged from the nozzle 711 can easily pass between the annular portion 721 and the substrate W. This increases the flow rate of the gas that spreads radially along the underside of the substrate W. A large area of ​​the substrate W can be dried with a small gas discharge flow rate. Furthermore, floating of the substrate W due to the discharge of gas can be suppressed.

[0099] The air volume amplifier 72 has an inlet 722 for taking in surrounding gas between the annular portion 721 and the horizontal plate 572. The area of ​​the inlet 722 is equal to the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the outer circumferential length of the annular portion 721, for example.

[0100] The air volume amplification section 72 has an air outlet 723, which blows gas toward the substrate W, on the surface of the annular section 721 facing the substrate W. The area of ​​the air outlet 723 is, for example, the area of ​​an opening formed on the surface of the annular section 721 facing the substrate W.

[0101] The area of ​​the intake port 722 may be larger than the area of ​​the blowout port 723. This allows a large amount of gas to be taken in from around the air volume amplifier 72, and the volume of air blowing onto the substrate W can be further amplified.

[0102] The annular portion 721 may have a tapered surface 724 at the air outlet 723 that widens toward the substrate W (e.g., upward). The gas flow can be smoothly bent along the tapered surface 724, which can prevent vortexes from occurring and prevent gas stagnation.

[0103] The annular portion 721 has an opening 725 on a surface (e.g., a lower surface) facing away from the surface facing the substrate W. The annular portion 721 may have a tapered surface (not shown) at the opening 725 that widens toward the side opposite the substrate W (e.g., downward).

[0104] In this embodiment, the liquid removal section 70 is provided in the standby section 57C where the substrate W temporarily waits along the transport path of the substrate W from the processing section 50 to the cleaning section 31B, but it may also be provided in a standby section (for example, the reversing section 58) where the substrate W temporarily waits along the transport path of the substrate W from the processing section 50 to the cleaning section 31A. As described above, the reversing section 58 and the standby section may be provided separately.

[0105] In the processing unit 50, the suction unit 62 sucks the liquid L adhering to the substrate W, and then in the waiting unit, the liquid removal unit 70 removes the liquid L adhering to the substrate W. This not only prevents the liquid L from scattering inside the substrate processing apparatus 1, but also prevents the substrate holding units 311 of the cleaning units 31A and 31B from becoming dirty.

[0106] Although the embodiments of the substrate holding mechanism, substrate processing apparatus, and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0107] This application claims priority based on Patent Application No. 2022-108009, filed with the Japan Patent Office on July 4, 2022, and the entire contents of Patent Application No. 2022-108009 are incorporated herein by reference. [Explanation of symbols]

[0108] 1. Substrate processing equipment 9 Control Unit 54 First conveying section 61 Substrate suction part 62 Suction part 63 Supply section L liquid W substrate

Claims

1. 1. A substrate processing apparatus comprising: a substrate suction unit that suctions a substrate; a supply unit that supplies a fluid to an interior of the substrate suction unit; a suction unit that suctions the fluid from an interior of the substrate suction unit; a first transport unit that holds the substrate from an opposite side to the substrate suction unit; and a control unit that controls the supply unit, the suction unit, and the first transport unit, The control unit performs the following control operations in the substrate processing apparatus: controlling the first transport unit to hold the substrate adsorbed by the substrate adsorption unit from the side opposite the substrate adsorption unit; controlling the supply of liquid into the inside of the substrate adsorption unit; controlling the first transport unit to move the first transport unit a set distance to separate the substrate a set distance from the substrate adsorption unit; and controlling the sucking of the liquid remaining between the substrate adsorption unit and the substrate into the inside of the substrate adsorption unit while the substrate is separated the set distance from the substrate adsorption unit.

2. The substrate processing apparatus according to claim 1 , wherein the substrate suction unit has a porous body, the porous body has an suction surface for suctioning the substrate, and the supply unit supplies the liquid into the porous body.

3. 3 . The substrate processing apparatus according to claim 1 , wherein the control unit performs control to fill a space between the substrate and the substrate suction unit with a film of the liquid while the substrate is spaced a set distance from the substrate suction unit.

4. 3. The substrate processing apparatus according to claim 1, wherein the control unit determines whether the substrate is held by the first transport unit after supplying the liquid to the inside of the substrate suction unit and before sucking the liquid into the inside of the substrate suction unit.

5. a processing unit including the substrate suction unit and a tool driving unit that drives a tool that processes the substrate that is sucked onto the substrate suction unit; a cleaning unit that cleans the substrate processed in the processing unit; a waiting section for temporarily waiting the substrate along a transport path from the processing section to the cleaning section; Equipped with the cleaning unit has a substrate holding unit that holds the substrate, The substrate processing apparatus according to claim 1 , wherein the standby section comprises a liquid removal section that removes the liquid from a region of the substrate that contacts the substrate holding section.

6. The substrate processing apparatus according to claim 5 , wherein the liquid remover comprises a gas ejection part that ejects gas toward a region of the substrate that contacts the substrate holder.

7. The substrate processing apparatus according to claim 6 , wherein the gas discharge unit supplies the cleaning liquid to the region of the substrate by discharging a cleaning liquid before discharging the gas.

8. 7. The substrate processing apparatus according to claim 6, wherein the liquid removal unit includes an air volume amplification unit that amplifies the volume of air impinging on the substrate by drawing gas around the gas discharge unit into the flow of gas discharged by the gas discharge unit by the Coanda effect.

9. The substrate processing apparatus according to claim 8 , wherein the air volume amplifier has an annular portion that surrounds the entire periphery of the gas discharge portion.

10. suctioning the substrate with a substrate suction portion; holding the substrate with a first transport unit from an opposite side to the substrate suction unit; supplying a liquid into the substrate suction portion; moving the first transport unit a set distance to separate the substrate from the substrate suction unit by a set distance; sucking the liquid remaining between the substrate suction portion and the substrate into the substrate suction portion while the substrate is spaced a set distance from the substrate suction portion; A substrate processing method comprising:

11. The substrate processing method according to claim 10 , wherein the substrate suction unit has a porous body, the porous body has an suction surface for suctioning the substrate, and the liquid is supplied into the porous body.

12. 12. The substrate processing method according to claim 10, further comprising filling a space between the substrate and the substrate suction part with a film of the liquid while the substrate is spaced a set distance from the substrate suction part.

13. 12. The substrate processing method according to claim 10, further comprising: determining whether the substrate is held by the first transport unit after supplying the liquid into the inside of the substrate suction unit and before sucking the liquid into the inside of the substrate suction unit.

14. processing the substrate by a processing unit having the substrate suction unit and a tool driving unit that drives a tool that processes the substrate sucked on the substrate suction unit; cleaning the substrate by a cleaning unit; and temporarily waiting the substrate in a waiting unit along a transport path of the substrate from the processing unit to the cleaning unit, 12. The substrate processing method according to claim 10, further comprising removing the liquid from a region of the substrate that contacts the substrate holding part in the waiting part before the substrate is held by the substrate holding part in the cleaning part.

15. The substrate processing method according to claim 14 , further comprising: in the standby section, a gas discharge section discharges gas toward the region of the substrate.

16. 16. The substrate processing method according to claim 15, further comprising: supplying the cleaning liquid to the region of the substrate by discharging a cleaning liquid in the standby section before the gas discharge section discharges the gas.

17. 16. The substrate processing method according to claim 15, further comprising: an airflow amplification section provided in the standby section around the gas discharge section, which amplifies the airflow striking the substrate by drawing gas around the gas discharge section into the flow of gas discharged by the gas discharge section by the Coanda effect.

18. 18. The substrate processing method according to claim 17, wherein the airflow amplification section has an annular section that surrounds the entire periphery of the gas discharge section.

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