Film formation method and film formation apparatus
By employing independent and synchronized magnet operations for selected and non-selected targets, the apparatus stabilizes plasma discharge and reduces impurities, enhancing film formation precision in film deposition processes.
JP7758441B2Active Publication Date: 2025-10-22TOKYO ELECTRON LTD
Patent Information
- Application Number
- JP2021101031
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-06-17
- Publication Date
- 2025-10-22
- Estimated Expiration
- 2041-06-17
Smart Images
Figure 0007758441000001 
Figure 0007758441000002 
Figure 0007758441000003
Abstract
To provide a technique to further precisely form a film by stabilizing the magnetic field of a magnet provided for every a plurality of targets.SOLUTION: In this film formation method, during sputter treatment in which a selected target selected from among a plurality of targets is subjected to sputtering, a film formation device performs a selected-side reciprocal action in which a magnet disposed on the selected target is caused to move reciprocally in parallel with a direction of extension of the selected target. Moreover, in this film formation method, along with the selected-side reciprocal action, at least one of the following is performed: an unselected-side reciprocal action, in which a magnet disposed on an unselected target not subjected to sputtering is caused to move reciprocally in parallel with a direction of extension of the unselected target; or a distancing action, in which the magnet is caused to move away from the unselected target.SELECTED DRAWING: Figure 5
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Film deposition device
JP2012201971A
Film deposition apparatus and film deposition method
JP2016033244A
Film deposition apparatus
JP2016164287A
Film deposition apparatus and film deposition method
JP2021025125A