Plasma processing equipment

Abstract

To uniformly perform plasma processing on a workpiece.SOLUTION: A plasma processing device (1) includes a vacuum vessel (2) that contains a workpiece (W1) inside, an antenna (6) provided outside the vacuum vessel (2) and generating a high-frequency magnetic field, a magnetic field introduction window (3) provided on a wall (22) of the vacuum vessel (2) and allowing the high-frequency magnetic field to be introduced into the interior of the vacuum vessel (2), and a mechanism part (7) for translating the antenna (6) along the magnetic field introduction window (3) while the antenna (6) is generating the high-frequency magnetic field.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus including a metal plate having a slit formed therein, a dielectric plate supported in contact with the metal plate and covering the slit, and an antenna disposed outside the processing chamber facing the metal plate and generating a high-frequency magnetic field. The plasma processing apparatus disclosed in Patent Document 1 can efficiently supply the high-frequency magnetic field generated by the antenna to the processing chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-198282 Summary of the Invention [Problem to be solved by the invention]

[0004] In the plasma processing apparatus disclosed in Patent Document 1, multiple antennas are arranged in a straight line outside the processing chamber. Since the plasma becomes stronger closer to the antenna, the plasma processing apparatus has a problem in that it is not possible to uniformly perform plasma processing on the workpiece placed in the processing chamber.

[0005] An object of one embodiment of the present invention is to perform plasma treatment uniformly on a treatment object. [Means for solving the problem]

[0006] In order to solve the above problems, a plasma processing apparatus according to one embodiment of the present invention comprises a vacuum vessel for accommodating an object to be processed therein, an antenna provided outside the vacuum vessel for generating a high-frequency magnetic field, a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high-frequency magnetic field into the interior of the vacuum vessel in order to generate plasma inside the vacuum vessel, and a mechanism for moving the antenna parallel to the magnetic field introduction window while the antenna is generating the high-frequency magnetic field. [Effects of the Invention]

[0007] According to one embodiment of the present invention, plasma treatment can be performed uniformly on a treatment object. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a cross-sectional configuration of a plasma processing apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a perspective view of the plasma processing apparatus shown in FIG. [Figure 3] 3 is a cross-sectional view showing a cross-sectional configuration of a connecting portion of a mechanism portion included in the plasma processing apparatus shown in FIG. 2. [Figure 4] FIG. 10 is a cross-sectional view showing a cross-sectional configuration of a plasma processing apparatus according to a second embodiment of the present invention. [Figure 5] FIG. 10 is a perspective view of a plasma processing apparatus according to a third embodiment of the present invention. [Figure 6] FIG. 10 is a cross-sectional view showing a cross-sectional configuration of a connecting portion of a mechanism portion included in a plasma processing apparatus according to a third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] [Embodiment 1] <Configuration of Plasma Processing Apparatus 1> FIG. 1 is a cross-sectional view showing the cross-sectional configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. In FIG. 1, the direction in which the antenna 6 moves is the X-axis direction, the direction from the vacuum vessel 2 toward the magnetic field introduction window 3 is the Z-axis direction, and the direction perpendicular to both the X-axis direction and the Z-axis direction is the Y-axis direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. Reference numerals 101 and 102 in FIG. 1 indicate how the antenna 6 is moved in the X-axis direction by the mechanism unit 7. Note that in FIG. 1, the antenna 6 and the mechanism unit 7 are not shown in a cross-sectional view but are shown as seen from the Y-axis direction.

[0010] As shown in FIG. 1, a plasma processing apparatus 1 performs plasma processing on a workpiece W1, such as a substrate, using an inductively coupled plasma P1. Here, the substrate may be, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, or a flexible substrate for a flexible display. The workpiece W1 may also be a semiconductor substrate used for various applications. Furthermore, the workpiece W1 is not limited to a substrate-like shape, such as a tool. Processing performed on the workpiece W1 includes, for example, film formation by plasma CVD (Chemical Vapor Deposition) or sputtering, plasma etching, ashing, coating film removal, etc.

[0011] The plasma processing apparatus 1 includes a vacuum vessel 2, a magnetic field introduction window 3, an antenna 6, a mechanism 7, a high-frequency power supply 8, and a holder 9. The high-frequency power supply 8 is shown in FIG. 2. A processing chamber 21 is formed inside the vacuum vessel 2, which is evacuated and into which gas is introduced. A holder 9 is housed inside the processing chamber 21, and the holder 9 is a stage that holds the workpiece W1 to be processed. The vacuum vessel 2 is, for example, a metal vessel. An opening 23 that penetrates the wall surface 22 of the vacuum vessel 2 in the thickness direction is formed. The vacuum vessel 2 is electrically grounded.

[0012] The gas introduced into the processing chamber 21 may be selected according to the processing to be performed on the workpiece W1 accommodated in the processing chamber 21. For example, when a film is formed on the workpiece W1 by plasma CVD, the gas is a source gas or a gas obtained by diluting the source gas with a diluent gas such as H. More specifically, when the source gas is SiH, a Si film can be formed on the workpiece W1; when SiH+NH, a SiN film can be formed; when SiH+O, a SiO film can be formed; and when SiF+N, a SiN:F film (fluorinated silicon nitride film) can be formed.

[0013] The magnetic field introduction window 3 has a metal plate 4 and a dielectric plate 5. The magnetic field introduction window 3 introduces a high-frequency magnetic field generated from the antenna 6 into the processing chamber 21 in order to generate plasma P1 in the processing chamber 21. The metal plate 4 and the dielectric plate 5 are arranged in this order along the Z-axis direction.

[0014] Fig. 2 is a perspective view showing only the members necessary for explanation of the plasma processing apparatus 1 shown in Fig. 1. Note that the vacuum vessel 2, the dielectric plate 5, the housing B1, etc. are omitted from Fig. 2. Reference numerals 201 and 202 in Fig. 2 indicate the movement of the antenna 6 in the X-axis direction by the mechanism unit 7.

[0015] The metal plate 4 is provided on the wall surface 22 of the vacuum vessel 2 so as to cover the opening 23. The metal plate 4 has a plurality of slits 41 formed therein, which penetrate the metal plate 4 in the Z-axis direction. Each of the plurality of slits 41 extends in the X-axis direction (first direction), and the plurality of slits 41 are arranged so as to be aligned along the Y-axis direction (second direction). The metal plate 4 is arranged so as to be substantially parallel to the surface of the workpiece W1.

[0016] The dielectric plate 5 is provided in contact with the metal plate 4 from the outside of the vacuum vessel 2 and overlaps the metal plate 4. The dielectric plate 5 is also provided on the surface of the metal plate 4 on the antenna 6 side so as to cover the multiple slits 41 from the outside of the vacuum vessel 2. The dielectric plate 5 separates the inside and outside of the vacuum vessel 2. This allows the dielectric plate 5 to maintain the vacuum state of the processing chamber 21. More specifically, the vacuum state of the processing chamber 21 is maintained by the metal plate 4 covering the opening 23 and the dielectric plate 5 covering the multiple slits 41.

[0017] The entire dielectric plate 5 is made of a dielectric material and has a flat plate shape. The material constituting the dielectric plate 5 may be ceramics such as alumina, silicon carbide, or silicon nitride, inorganic materials such as quartz glass or alkali-free glass, polyimide, or a resin material such as a fluororesin such as Teflon (registered trademark). When the material constituting the dielectric plate 5 includes Teflon, the dielectric plate 5 has a partially transparent region and may have a structure in which a glass sheet is bonded to a Teflon sheet.

[0018] The antenna 6 is linear, is provided outside the vacuum vessel 2, and is supported by the mechanism 7 so as to face the magnetic field introduction window 3 and extend in the Y-axis direction. By providing the antenna 6 outside the vacuum vessel 2, the influence of radiant heat from the antenna 6 on the workpiece W1 can be reduced compared to when the antenna 6 is provided inside the vacuum vessel 2. This allows plasma processing to be performed on the workpiece W1 made of a film material. The antenna 6 is arranged so as to be substantially parallel to the surface of the workpiece W1 contained in the processing chamber 21.

[0019] When high-frequency power is applied from the high-frequency power supply 8 via the mechanism 7, the antenna 6 generates a high-frequency magnetic field. This generates an inductive electric field in the space surrounded by the processing chamber 21, and an inductively coupled plasma P1 is generated in that space. The high-frequency magnetic field generated from the antenna 6 is supplied to the processing chamber 21 after passing through the dielectric plate 5 and the multiple slits 41.

[0020] <Configuration of mechanism unit 7> While the antenna 6 is generating a high-frequency magnetic field, the mechanism 7 translates the antenna 6 in the X-axis direction along the magnetic field introduction window 3. At this time, the mechanism 7 translates the antenna 6 along a plane F1. The plane F1 is parallel to the XY plane and also parallel to the surface of the workpiece W1.

[0021] By translating the antenna 6 in the X-axis direction, which is the direction in which the multiple slits 41 extend, the high-frequency magnetic field generated by the antenna 6 can be continuously supplied to the workpiece W1 from the slits 41, thereby enabling efficient plasma treatment of the workpiece W1. Also, plasma treatment can be performed on the workpiece W1 with a large surface area.

[0022] 2, the mechanism 7 has arms A1 to A6 and connectors C1 to C4. When high-frequency power is supplied from the high-frequency power supply 8 to the antenna 6, current flows from the high-frequency power supply 8 through arm A5, connector C2, arm A2, connector C1, arm A1, antenna 6, arm A3, connector C3, arm A4, connector C4, and arm A6 in this order. Each of the arms A1 to A6 is a conductive member.

[0023] The arms A1 to A6 are used to support the antenna 6 and supply high frequency power to the antenna 6. The arm A1 has a straight portion A11 and a rotation axis A12. One end of the straight portion A11 is connected to the power supply side end portion 61 of the antenna 6, and the other end of the straight portion A11 is connected to the rotation axis A12 so as to be bent.

[0024] The connecting portion C1 rotatably connects the arms A1 and A2. The connecting portion C1 has a first disk C11 as a first member and a second disk C12 as a second member. The first disk C11 is fixed to the rotation axis A12. In other words, the first disk C11 is fixed to one arm end of the arm A1 connected to the connecting portion C1. The second disk C12 is fixed to the rotation axis A22 of the arm A2. In other words, the second disk C12 is fixed to the other arm end of the arm A2 connected to the connecting portion C1.

[0025] The arm A2 has a straight portion A21 and rotation axes A22 and A23. One end of the straight portion A21 is connected to the rotation axis A22 so as to bend, and the other end of the straight portion A21 is connected to the rotation axis A23 so as to bend.

[0026] The connecting portion C2 rotatably connects the arms A2 and A5. The connecting portion C2 has a first disk C21 as a first member and a second disk C22 as a second member. The first disk C21 is fixed to the rotation axis A23. In other words, the first disk C21 is fixed to one arm end of the arm A2 connected to the connecting portion C2. The second disk C22 is fixed to the arm A5, which is the rotation axis. In other words, the second disk C22 is fixed to the other arm end of the arm A5 connected to the connecting portion C2. One arm end of the arm A5 is electrically connected to the high-frequency power source 8.

[0027] One end of arm A3 is connected to the ground side end 62 of antenna 6. The configurations of arm A3, connecting portion C3, arm A4, and connecting portion C4 are the same as the configurations of arm A1, connecting portion C1, arm A2, and connecting portion C2, respectively. One arm end of arm A6 is electrically grounded, i.e., connected to ground, and the other arm end of arm A6 is connected to connecting portion C4.

[0028] <Configuration of connecting portion C1> 3 is a cross-sectional view showing the cross-sectional configuration of the connecting portion C1 of the mechanism portion 7 included in the plasma processing apparatus 1 shown in FIG. In the connecting portion C1, it is preferable that the first disk C11 and the second disk C12 are relatively rotatable, and that the first disk C11 and the second disk C12 form a capacitor. This not only reduces the reactance of the antenna 6 by the capacitor, but also realizes a configuration in which the antenna 6 is translated along the magnetic field introduction window 3 by the relative rotation of the first disk C11 and the second disk C12. This will be specifically described below.

[0029] As shown in FIG. 3, the connecting portion C1 has a housing B1 made of resin. The housing B1 holds the first disk C11 and the second disk C12 in parallel with each other across a gap G1 so that the first disk C11 and the second disk C12 form a parallel plate capacitor, and supports them rotatably relative to each other. This allows the first disk C11 and the second disk C12 to be rotatable relative to each other at the connecting portion C1, and allows the parallel plate capacitor to be formed. Inside the housing B1, recesses 71 and 72 are formed parallel to each other with a gap between them. The recesses 71 and 72 are each formed in an annular shape inside the housing B1. The first disk C11 fits into the recess 71, and the second disk C12 fits into the recess 72.

[0030] Openings 73 and 74 are formed on both sides of the housing B1, with the rotating shaft A12 entering through opening 73 and the rotating shaft A22 entering through opening 74. A seal member 75 is provided between opening 73 and the rotating shaft A12, and a seal member 76 is provided between opening 74 and the rotating shaft A22. The seal members 75 and 76 are, for example, O-rings, and are intended to prevent the coolant filled inside the housing B1 from leaking out of the housing B1.

[0031] A flow path FL1 for circulating a coolant is formed in the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4. In the connecting portion C1, the flow path FL1 is formed inside the rotation axes A12, A22. This makes it possible to suppress heat generation in the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4, thereby reducing the influence of heat from the antenna 6, the arms A1 to A6, and the connecting portions C1 to C4 on the workpiece W1.

[0032] The antenna 6 and arms A1 to A6 are hollow pipes with a flow path FL1 formed therein for circulating a coolant. The coolant flows through the flow path FL1 formed inside the rotating shafts A12 and A22, thereby filling the inside of the housing B1 with the coolant. From the viewpoint of electrical insulation, the coolant flowing through the flow path FL1 is preferably high-resistivity water, for example, pure water or water close to pure water. Alternatively, a liquid refrigerant other than water, such as a fluorine-based inert liquid, may be used as the coolant.

[0033] The mechanism unit 7 is provided with motors M1 and M2 that rotate the first and second disks C11 and C12 of the connecting unit C1 relative to each other. Specifically, the motor M1 is provided on the rotation shaft A12, and the motor M2 is provided on the rotation shaft A22. The motors M1 and M2 are electrically connected to a control unit 10 included in the plasma processing apparatus 1.

[0034] When motor M1 rotates, rotation shaft A12 rotates, and linear portion A11 connected to rotation shaft A12 rotates around an axis parallel to the Y-axis direction and along rotation shaft A12. When motor M2 rotates, rotation shaft A22 rotates, and linear portion A21 connected to rotation shaft A22 rotates around an axis parallel to the Y-axis direction and along rotation shaft A22.

[0035] The control unit 10 controls the translation of the antenna 6 by the rotation angles of the motors M1 and M2. The control unit 10 sends control signals to the motors M1 and M2 so that the antenna 6 translates along the plane F1 shown in FIG. 1. By relatively rotating the first circular plate C11 and the second circular plate C12 of the connecting portion C1 using the motors M1 and M2, the control unit 10 can easily position the antenna 6 through the rotation of the motors M1 and M2. The cross-sectional configuration of the connecting portions C2 to C4 is the same as the cross-sectional configuration of the connecting portion C1 shown in FIG. 3. The motor M2 may be provided on the rotation axis A23 instead of the rotation axis A22.

[0036] As described above, in the plasma processing apparatus 1, the antenna 6 that generates the high-frequency magnetic field moves parallel to the magnetic field introduction window 3 provided on the wall surface 22 of the vacuum vessel 2, so that the plasma processing can be performed uniformly on the workpiece W1. Furthermore, since the mechanism unit 7 moves the antenna 6 parallel outside the vacuum vessel 2, the generation of particles that would occur if a movement mechanism were provided inside the processing chamber 21 can be suppressed.

[0037] [Embodiment 2] A second embodiment of the present invention will be described below. For ease of explanation, members having the same functions as those described in the first embodiment will be denoted by the same reference numerals, and their description will not be repeated. Figure 4 is a cross-sectional view showing the cross-sectional configuration of a plasma processing apparatus 1A according to the second embodiment of the present invention.

[0038] As shown in FIG. 4, the plasma processing apparatus 1A differs from the plasma processing apparatus 1 of embodiment 1 in that it includes a detection unit 11. The detection unit 11 detects the light emitted from the plasma P1 generated by the antenna 6. Specifically, the detection unit 11 is, for example, a spectroscope, and detects the light emission intensity of a specific wavelength. A plurality of detection units 11 are provided in the processing chamber 21 and are arranged between the workpiece W1 and the metal plate 4. The plurality of detection units 11 are aligned in the X-axis direction and are arranged so as to be substantially parallel to the surface of the workpiece W1.

[0039] The control unit 10 is also connected to a plurality of detection units 11, and controls the parallel movement of the antenna 6 by the mechanism unit 7 based on the light emission of the plasma P1 detected by the plurality of detection units 11. Specifically, the control unit 10 controls the movement speed of the antenna 6 by the mechanism unit 7 based on the light emission intensity of the plasma P1 at a specific wavelength detected by the plurality of detection units 11. This makes it possible to adjust the position of the antenna 6 while detecting the light emission of the plasma P1, and therefore makes it easy to adjust the treatment of the plasma P1.

[0040] [Embodiment 3] A third embodiment of the present invention will be described below. For ease of explanation, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and their description will not be repeated. FIG. 5 is a perspective view showing only the components necessary for explanation of a plasma processing apparatus 1B according to the third embodiment of the present invention. Note that the vacuum vessel 2, the dielectric plate 5, and the like are not shown in FIG. 5. Reference numerals 301 and 302 in FIG. 5 indicate the movement of the antenna 6 in the X-axis direction by the mechanism 7A.

[0041] 5, plasma processing apparatus 1B differs from plasma processing apparatus 1 of embodiment 1 in that mechanism unit 7 is replaced with mechanism unit 7A. Mechanism unit 7A has connection unit 81, arms 82 to 85, a carriage 91, and rails 93 and 94. Connection unit 81 is electrically connected to high-frequency power supply 8 via wiring W2, and is also electrically connected to arms 82 and 84. Arms 82 to 85 are each made of conductive material.

[0042] One end of arm 82 is electrically connected to connection portion 81, and the other end of arm 82 is connected to one end of arm 83 so as to bend. The other end of arm 83 is connected to one end of antenna 6. One end of arm 84 is electrically connected to connection portion 81, and the other end of arm 84 is connected to one end of arm 85 so as to bend. The other end of arm 85 is connected to the other end of antenna 6.

[0043] The connection part 81 is provided on a carriage 91, and wheels 92 of the carriage 91 move on rails 93 and 94. The rails 93 and 94 are arranged so as to be substantially parallel to the surface of the workpiece W1. The rails 93 and 94 extend in the X-axis direction.

[0044] As the wheels 92 move on the rails 93 and 94, the antenna 6 moves in parallel along the magnetic field introduction window 3. A motor (not shown) is provided on the wheels 92, and the motor is electrically connected to the control unit 10. The control unit 10 controls the parallel movement of the antenna 6 by the rotation angle of the motor provided on the wheels 92.

[0045] [Embodiment 4] A fourth embodiment of the present invention will be described below. For ease of explanation, members having the same functions as those described in the first embodiment will be denoted by the same reference numerals, and their description will not be repeated. Fig. 6 is a cross-sectional view showing the cross-sectional configuration of the connecting portions CN1 and CN2 of the mechanism included in the plasma processing apparatus according to the third embodiment of the present invention. The control unit 10 is omitted from Fig. 6.

[0046] In the plasma processing apparatus according to the third embodiment, as compared with the plasma processing apparatus 1 according to the first embodiment, as shown by reference numeral 401 in FIG. 6, the connecting portion C1 is replaced with a connecting portion CN1, the rotating shaft A12 is replaced with an arm member AR1, and the housing B1 is replaced with a housing B2. The connecting portion CN1 has a housing B2 as a first member and a second disk C12 as a second member. The housing B2 is fixed to the arm member AR1. That is, the housing B2 is fixed to one arm end of the arm connected to the connecting portion CN1. A flow path FL1 may be formed in the arm member AR1. The housing B2 is a conductive member.

[0047] An opening 72A is formed on one side of the housing B2, and the rotating shaft A22 fits into the opening 72A. A seal member 73A is provided between the opening 72A and the rotating shaft A22. The seal member 73A is an O-ring, for example, and is used to prevent the coolant filled inside the housing B2 from leaking out of the housing B2.

[0048] The housing B2 and the second disk C12 are rotatable relative to each other, and form a capacitor between them. Specifically, the capacitor is formed between the inner wall 71A of the housing B2 and the second disk C12.

[0049] The rotary shaft A22 is rotatably supported by the seal member 73A in the opening 72A. That is, the housing B2 rotatably supports the second circular plate C12. This realizes a configuration in which the housing B2 is fixed and does not rotate, while the second circular plate C12 is rotatable. This eliminates the need for the motor M1, and reduces the number of motors required for rotation.

[0050] <Modification> Reference numeral 402 in Fig. 6 is a cross-sectional view showing a cross-sectional configuration of a modified example of the coupling part CN1 shown by reference numeral 401 in Fig. 6. As shown by reference numeral 402 in Fig. 6, compared to the coupling part CN1, the housing B2 of the coupling part CN2 may be changed to a housing B3, and the rotation axis A22 may be changed to a rotation axis AR2.

[0051] The connecting part CN2 has a housing B3 as a first member and discs CA, CB, and CC as a second member. The housing B3 is fixed to the arm member AR1. In other words, the housing B3 is fixed to one end of the arm connected to the connecting part CN2. The housing B3 is a conductive member.

[0052] An opening 74B is formed on one side of the housing B3, and the rotating shaft AR2 fits into the opening 74B. A seal member 75B is provided between the opening 74B and the rotating shaft AR2. The seal member 75B is an O-ring, for example, and is used to prevent the coolant filled inside the housing B3 from leaking out of the housing B3.

[0053] The housing B3 and the disks CA, CB, and CC are rotatable relative to each other, and together they form a capacitor. The disks CA, CB, and CC are mounted on a rotation axis AR2 in parallel with a gap between them. Inside the housing B3, protrusions 72B and 73B are formed in parallel with a gap between them. The protrusions 72B and 73B are each formed in an annular shape inside the housing B3.

[0054] The disk CA is disposed between the inner wall 71B of the housing B3 and the protruding portion 72B, the disk CB is disposed between the protruding portions 72B and 73B, and the disk CC is disposed near the protruding portion 73B. As a result, a capacitor is formed between the disk CA and the protruding portion 72B, a capacitor is formed between the disk CB and the protruding portions 72B and 73B, and a capacitor is formed between the disk CC and the protruding portion 73B. The rotating shaft AR2 is rotatably supported by the sealing member 75B at the opening 74B. In other words, the housing B3 rotatably supports the disks CA, CB, and CC.

[0055] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0056] 1, 1A, 1B Plasma treatment device 2 Vacuum container 3 Magnetic field introduction window 4 metal plate 5 Dielectric plate 6 Antennas 7, 7A Mechanism section 10 Control Unit 11 Detection unit 22 Wall 41 Slit 82~85, A1~A6 arms B1 chassis B2, B3 Housing (first component) C1~C4, CN1, CN2 connection part C11, C21 First circular plate (first member) C12, C22 Second disc (second member, disc) CA, CB, CC discs FL1 flow path G1 Gap M1 and M2 motors P1 Plasma W1 Processing object

Claims

1. a vacuum vessel for accommodating an object to be treated therein; an antenna provided outside the vacuum vessel and generating a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum vessel, which introduces the high-frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel; a mechanism for translating the antenna along the magnetic field introduction window while the antenna generates the high-frequency magnetic field, The mechanism unit includes: a plurality of arms for supporting the antenna and supplying high frequency power to the antenna; a connecting portion that rotatably connects the arms, The connecting portion is a first member fixed to one arm end connected to the connecting portion; a second member fixed to the other arm end connected to the connecting portion, 10. A plasma processing apparatus, wherein the first member and the second member are rotatable relative to each other, and the first member and the second member form a capacitor.

2. the mechanism unit is provided with a motor that rotates the first member and the second member of the connecting unit relative to each other, 2. The plasma processing apparatus according to claim 1, further comprising a control unit that controls the parallel movement of the antenna according to a rotation angle of the motor.

3. 3. The plasma processing apparatus according to claim 1, wherein the connecting portion has a housing that holds the first circular plate as the first member and the second circular plate as the second member in parallel with each other across a gap and supports them rotatably relative to each other so that the first circular plate as the first member and the second circular plate as the second member form a parallel plate capacitor.

4. 3. The plasma processing apparatus according to claim 1, wherein the housing as the first member rotatably supports a disk as the second member.

5. 5. The plasma processing apparatus according to claim 1, wherein a flow path for circulating a cooling liquid is formed in the antenna, the arm, and the connecting portion.

6. A vacuum vessel for accommodating an object to be treated therein; an antenna provided outside the vacuum vessel and generating a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum vessel, which introduces the high-frequency magnetic field into the vacuum vessel in order to generate plasma inside the vacuum vessel; a mechanism for translating the antenna along the magnetic field introduction window while the antenna generates the high frequency magnetic field; a detection unit that detects the light emitted from the plasma generated by the antenna; a control unit that controls the translation of the antenna by the mechanism unit based on the plasma light emission detected by the detection unit.

7. 7. The plasma processing apparatus according to claim 1, wherein the magnetic field introduction window has a dielectric plate that separates the inside and outside of the vacuum vessel.

8. the magnetic field introduction window further includes a metal plate provided in contact with the dielectric plate and having a plurality of slits formed therein; Each of the plurality of slits extends in a first direction, and the plurality of slits are arranged to be aligned along a second direction perpendicular to the first direction, the antenna is a linear antenna arranged to extend in the second direction, 8. The plasma processing apparatus according to claim 7, wherein the mechanism section translates the antenna in the first direction.

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