Electronic component manufacturing apparatus and electronic component manufacturing method

Abstract

To provide an electronic component manufacturing apparatus and an electronic component manufacturing method capable of suppressing the occurrence of slack wrinkles in a holding film when the holding film is sucked onto an attracting surface.SOLUTION: An electronic component manufacturing apparatus 50 is a manufacturing apparatus having a function of heating an electronic component 30, and includes a chuck table 51 that sucks the holding film 10 holding the electronic component 30 on one side from the other side of the holding film 10 and fixes it to the chuck surface 511, a heater 52 that contacts the non-chuck surface 512 of the chuck table 51 and heats the electronic component 30, and a contact / separation mechanism 53 that contacts or separates the chuck table 51 and the heater 52.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an electronic component manufacturing apparatus and method that uses a holding film to hold electronic components and that can heat the electronic components while they are held by the holding film. [Background technology]

[0002] Electronic components (package components, semiconductor chips, etc.) are manufactured through multiple processes, and in each process, a carrier, socket, etc. is selected from among several types according to the process, and the electronic components are held in these carriers, sockets, etc. The use of such carriers, sockets, etc. requires the electronic components to be transferred between processes, which is cumbersome and increases costs. Therefore, a holding film that can be shared between different processes has been proposed as a means of holding electronic components in place of carriers, sockets, etc. (see Patent Document 1). The above-mentioned holding film has a base layer made of synthetic resin and a holding layer made of adhesive, and can hold a semiconductor wafer that will become an electronic component by adhering it to the holding layer. The holding film can also be fixed by adsorption to a chuck table while still holding the semiconductor wafer that will become an electronic component. This holding film is used in a singulation process in which the semiconductor wafer is singulated to obtain semiconductor components, an evaluation process in which the semiconductor components are evaluated, and a pick-up process in which the semiconductor components are separated from the adhesive layer. In the above-mentioned evaluation process, evaluations may be performed in a heated environment, such as checking operation in a heated environment or performing accelerated evaluations using thermal stress loads. When performing evaluations in a heated environment, if a flexible material that can be used in the pickup process is selected as the base layer material for the above-mentioned holding film, the holding film may not be able to adhere to the chuck table. Therefore, a holding film has been proposed that is versatile enough to be shared between different processes and can be reliably adhered to the chuck table in a heated environment (see Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] WO2017 / 002610 [Patent Document 2] WO2018 / 139612 Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned evaluation process, in order to improve manufacturing efficiency, simultaneous measurement of as many electronic components as possible may be an issue. Also, in the above-mentioned heated environment, solving the problem of poor adhesion of the holding film to the chuck table may be an issue. The inventors have studied the use of holding films in heated environments and found that when the holding film approaches a heated suction surface, it develops slack wrinkles due to thermal convection on the suction surface, deflection due to the weight of the held electronic components, thermal expansion of the base layer of the holding film, etc. The occurrence of slack wrinkles can cause problems such as abnormal suction of the holding film to the chuck table, and the slack wrinkles can stretch the holding film, changing the positional relationship of the electronic components and reducing the efficiency of simultaneous measurement of multiple components. Therefore, it is necessary to suppress the occurrence of such slack wrinkles. Therefore, the inventors of the present invention have repeatedly conducted tests to satisfy as many required properties as possible, and have investigated a technique for adhering a support film to an adsorption surface without causing looseness or wrinkles.

[0005] The present invention has been made in consideration of the above problems, and aims to provide an electronic component manufacturing apparatus and an electronic component manufacturing method that can suppress the occurrence of sagging wrinkles in the holding film when it is adsorbed to the adsorption surface. [Means for solving the problem]

[0006] The present invention provides the following means for solving the above problems. [1] The manufacturing apparatus for electronic components of the present invention is a manufacturing apparatus having a function of heating electronic components, a chuck table that sucks the holding film, one side of which holds the electronic components, from the other side of the holding film to fix it to a chuck surface; a heater that contacts a non-chuck surface of the chuck table and heats the electronic component; The present invention is characterized in that it includes a contact / separation mechanism that brings the chuck table and the heater into contact with or separates them from each other. [2] The electronic component manufacturing apparatus of the present invention may further include an energization mechanism for energizing and evaluating the electrical characteristics of the electronic component. [3] The method for manufacturing an electronic component of the present invention is a method for manufacturing an electronic component using the above-mentioned electronic component manufacturing apparatus, a fixing step of fixing a holding film, one side of which holds an electronic component, to a chuck surface of the chuck table by sucking the other side of the holding film while the chuck table and the heater are spaced apart; The method also includes a heating step of bringing the heater into contact in a heated state with the non-chuck surface of the chuck table to which the holding film is fixed. [4] In the method for producing an electronic component of the present invention, the support film has a support layer for holding the electronic component and a base layer for supporting the support layer, The ratio R of the elastic modulus E'(160) at 160 ° C to the elastic modulus E'(25) at 25 ° C E (=E'(160) / E'(25)) can be 0.001 or more and 0.6 or less, and E'(25) can be 3500 MPa or less. [5] In the method for producing an electronic component of the present invention, the supporting film may have a linear thermal expansion coefficient of 100 ppm / K or more and 300 ppm / K or less. [Effects of the Invention]

[0007] According to the electronic component manufacturing apparatus and electronic component manufacturing method of the present invention, it is possible to prevent the occurrence of slack wrinkles in the holding film when the holding film is attached to the suction surface. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is an explanatory diagram illustrating an example of an electronic component manufacturing apparatus according to the present invention. [Figure 2] FIG. 10 is an explanatory diagram illustrating another example of the electronic component manufacturing apparatus according to the present invention. [Figure 3] 10A and 10B are explanatory diagrams illustrating a modified example of the electronic component manufacturing apparatus according to the present invention. [Figure 4] 1 is a cross-sectional view illustrating a protective film used in the present invention. [Figure 5] 1A and 1B are a plan view and a side view, respectively, illustrating a protective film and an electronic component according to the present invention. [Figure 6] 4A to 4C are explanatory views illustrating a fixing step in the method for manufacturing an electronic component according to the present invention. [Figure 7] 3A to 3C are explanatory views illustrating a heating step in the method for manufacturing an electronic component according to the present invention. [Figure 8] 3A to 3C are explanatory diagrams illustrating a current application step in the method for manufacturing an electronic component according to the present invention. [Figure 9] 10A and 10B are explanatory diagrams illustrating a release step in the method for manufacturing an electronic component according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] The present invention will now be described with reference to the drawings. The matters set forth herein are intended to exemplify and exemplify embodiments of the present invention, and are set forth in order to provide what is believed to be the most effective and easily understandable explanation of the principles and conceptual features of the present invention. In this regard, it is not intended to show structural details of the present invention beyond the extent necessary for a fundamental understanding of the present invention, and the description, taken in conjunction with the drawings, will make clear to those skilled in the art how some aspects of the present invention can be actually embodied.

[0010] [1] Electronic component manufacturing equipment The manufacturing apparatus for electronic components of the present invention is a manufacturing apparatus having a function of heating electronic components, a chuck table that sucks the holding film, one side of which holds the electronic components, from the other side of the holding film to fix it to a chuck surface; a heater that contacts a non-chuck surface of the chuck table and heats the electronic component; and a contact / separation mechanism for bringing the chuck table and the heater into contact with or separating them from each other.

[0011] As an embodiment of the present invention, an electronic component manufacturing apparatus 50 (hereinafter also referred to simply as "manufacturing apparatus 50") is illustrated in FIGS. This manufacturing apparatus 50 is used to carry out each step involved in the manufacture of the electronic component 30. The manufacturing apparatus 50 handles one or more electronic components 30 in a state in which the electronic components 30 are held on one side of the holding film 10. That is, the holding film 10 is shared among the steps in the manufacture of the electronic components 30 to hold the electronic components 30.

[0012] As shown in FIGS. 1 and 2, the manufacturing apparatus 50 includes a chuck table 51, a heater 52, and a contact / separation mechanism 53. The chuck table 51 sucks the holding film 10 , on one side of which the electronic components 30 are held, from the other side, and fixes it to a chuck surface 511 . The heater 52 comes into contact with the non-chuck surface 512 of the chuck table 51 to heat the electronic component 30 . The contact / separation mechanism 53 brings the chuck table 51 and the heater 52 into contact with or separates them from each other.

[0013] (1) Mechanisms of the manufacturing equipment Hereinafter, each mechanism of the manufacturing apparatus 50, such as the chuck table 51, the heater 52, and the contact / separation mechanism 53, will be described.

[0014] (1-1) Chuck table The chuck table 51 has a chuck surface 511 for fixing the holding film 10 (see FIGS. 1 and 2). That is, the chuck surface 511 of the chuck table 51 can fix the holding film 10 by sucking it from the other surface side (lower surface side) and adsorbing it. An electronic component 30 is held on one surface (upper surface) of the holding film 10 fixed to the chuck surface 511. The electronic component 30 is fixed to the chuck table 51 via the holding film 10. The chuck table 51 fixes the holding film 10 to the chuck surface 511, thereby preventing the holding film 10 fixed to the chuck surface 511 from loosening and wrinkling.

[0015] The chuck table 51 has a non-chuck surface 512 that comes into contact with the heater 52. There are no particular limitations on where the non-chuck surface 512 is provided on the chuck table 51, as long as it can come into contact with the heater 52. Usually, the non-chuck surface 512 is provided on the surface opposite to the chuck surface 511 in the thickness direction of the chuck table 51 .

[0016] The chuck table 51 is not particularly limited in terms of configuration, etc., as long as it has a chuck surface 511 and a non-chuck surface 512 . Specifically, as shown in FIGS. 1 and 2, the chuck table 51 has, on its upper surface, a chuck surface 511 that is open upward. The chuck table 51 has a non-chuck surface 512 on the lower surface opposite to the chuck surface 511 in the thickness direction of the chuck table 51 .

[0017] A molded body having suction routes such as suction holes and suction grooves is used for the chuck table 51. Usually, this molded body is formed in a plate shape. The chuck table 51 exerts a suction effect by connecting a suction source such as a vacuum pump to the suction holes and / or suction grooves via a necessary path. Usually, the top surface of the molded body is used as the chucking surface 511. The bottom surface of the molded body is used as the non-chucking surface 512. The chucking surface 511 and the non-chucking surface 512 are usually flat as a whole.

[0018] The manufacturing apparatus 50 has a function of heating the electronic component 30, and this function is achieved by the contact between the chuck table 51 and the heater 52. That is, the chuck table 51 is brought into contact with the heater 52, and is heated by the heater 52. The chuck table 51 in this heated state can heat the electronic component 30 together with the holding film 10. That is, the chuck table 51 can exert a heat transfer function of transferring heat from the heater 52 to the electronic component 30 while in contact with the heater 52 and in a heated state.

[0019] On the other hand, the chuck table 51 is not integrated with the heater 52 and can be separated from the heater 52 at the non-chuck surface 512 . That is, the temperature of the chuck table 51 is lowered by moving away from the heater 52. The chuck table 51 in this lowered temperature state receives heat from the heater 52 and dissipates the heat, thereby shielding the holding film 10 from the heater 52. That is, the chuck table 51 can exhibit a heat-shielding function of blocking the influence of heat from the heater 52 on the support film 10 when the chuck table 51 is separated from the heater 52 and in a cooled state. The chuck table 51 does not necessarily have to be separated from the heater 52 to be in a cooled state. For example, the chuck table 51 can be provided with a cooling means, such as by passing a cooling water pipe through the inside of the chuck table 51 or by attaching a cooling fan or a Peltier element to the bottom of the chuck table 51, and the chuck table 51 can be actively cooled by the cooling means to be in a cooled state.

[0020] The temperature of the chuck table 51 in the heated state is not particularly limited. The lower limit of the temperature of the chuck table 51 in the heated state is preferably, for example, 50° C. or higher, further 100° C. or higher, or even 150° C. or higher. The upper limit of the temperature in the heated state is usually 250° C. or lower. The temperature of the chuck table 51 in the temperature-reducing state is not particularly limited as long as it is lower than the temperature in the temperature-rising state. The lower limit of the temperature in the temperature-reducing state is not particularly limited, but is typically room temperature or higher. Specifically, the lower limit of the temperature of the chuck table 51 in the temperature-reducing state can be, for example, 20°C or higher, further 25°C or higher, or even 30°C or higher. The upper limit of the temperature in the temperature-reducing state is typically less than 150°C.

[0021] There is no particular limitation on the material used for the chuck table 51. Specific examples of this material include metal materials such as iron, aluminum, copper, and brass, inorganic materials such as ceramics, porcelain, and glass, and resin materials such as thermoplastic resins and thermosetting resins. The material used for the chuck table 51 has a thermal conductivity (W m -1 ·K -1 In this case, the chuck table 51 can preferably perform heat transfer function in a heated state. Specifically, thermal conductivity (W m -1 ·K -1 ) is 10W·m -1 ·K -1 More than 30W·m is preferable. -1 ·K -1 More than 50W·m is preferable. -1 ·K -1 More than 100W·m is more preferable. -1 ·K -1 The above is particularly preferred. In addition, the thermal conductivity (W m -1 ·K -1 ) is not particularly limited, but is usually 500W m -1 ·K -1 The following is the result. Furthermore, the thermal conductivity is usually calculated according to the definition of 5-9 of JIS Z8000-5:2014.

[0022] The material used for the chuck table 51 has a specific heat capacity (kJ kg -1 ·K -1 ) is preferable. -1 ·K -1 A material with a small specific heat capacity (kJ·kg) has the property of heating and cooling easily. -1 ·K -1 ) is used, the temperature can be raised quickly when the material comes into contact with the heater 52, and the temperature can be lowered quickly when the material is separated from the heater 52. Specifically, the specific heat capacity (kJ kg -1 ·K -1 ) is 1.50 kJ kg -1 ·K -1 Preferably less than 1.00 kJ kg -1 ·K -1 Less than 0.70 kJ kg is preferable. -1 ·K -1 More preferably, 0.40 kJ kg -1 ·K -1 The following are particularly preferred: The specific heat capacity (kJ kg -1 ·K -1 ) is not particularly limited, but is usually 0.1 kJ kg -1 ·K -1 That's all. Furthermore, the specific heat capacity is usually calculated according to the definition in 5-16.1 of JIS Z8000-5:2014.

[0023] The material used for the chuck table 51 is not limited to one type, but may be two or more types. For example, in the chuck table 51, the chuck surface 511 that adsorbs and fixes the holding film 10 may be made of the above-mentioned material with high thermal conductivity or material with low specific heat capacity, and materials with low thermal conductivity or material with high specific heat capacity may be used for the parts other than the chuck surface 511.

[0024] In the manufacturing apparatus 50, only one chuck table 51 can be provided for one heater 52, but a plurality of chuck tables 51 can also be provided for one heater 52. When multiple chuck tables 51 are provided for one heater 52, for example, by appropriately replacing a chuck table 51 in a heated state with a chuck table 51 in a cooled state, the time loss required for a chuck table 51 in a heated state to change to a cooled state can be reduced, thereby improving production efficiency.

[0025] (1-2) Heater The heater 52 contacts the non-chuck surface 512 of the chuck table 51 to heat the electronic component 30 (see FIGS. 1 and 2). That is, the heater 52 does not directly heat the electronic component 30, but indirectly heats it via the chuck table 51. The heater 52 is not particularly limited in terms of the heating method (e.g., resistance heating method, lamp heating method, etc.), material, configuration, etc. Typically, a resistance heater that uses heat generated by passing electricity through a heating element is used as the heater 52. The heater 52 may also be equipped with a sensor, control mechanism, etc. for controlling the heating temperature. There is no particular limitation on the heating temperature of the electronic component 30 by the heater 52. The lower limit of the heating temperature is preferably, for example, 50° C. or higher, further 100° C. or higher, or even 150° C. or higher. The upper limit of the heating temperature is usually 250° C. or lower.

[0026] (1-3) Approach and separation mechanism The contact / separation mechanism 53 is a mechanism for bringing the chuck table 51 into contact with or separating the heater 52 (see FIGS. 1 and 2). In other words, the contact / separation mechanism 53 can also be said to be a mechanism for switching the temperature of the chuck table 51 between the increased temperature state and the decreased temperature state by bringing the chuck table 51 into contact with or separating the heater 52. Specifically, the approaching / separating mechanism 53 includes a means for moving the heater 52 toward or away from the chuck table 51, a means for moving the chuck table 51 toward or away from the heater 52, or a means for performing both of these.

[0027] As a specific example of the approaching / separating mechanism 53, FIG. 1 shows a means for moving the heater 52 toward or away from the chuck table 51. That is, as shown in FIG. 1, the contact / separation mechanism 53 includes a base 531 on which the chuck table 51 is placed, and a support 532 that supports the heater 52 by suspending it below the chuck table 51 . The chuck table 51 is fixed to the upper surface of the base 531, and a through hole 533 is provided in a portion corresponding to the chuck table 51. The through hole 533 allows the non-chuck surface 512 of the chuck table 51 to be open downward. The support pillar 532 is provided so as to extend downward from the lower surface of the base 531, and its lower end is connected to the heater 52. The support pillar 532 is configured so as to be able to extend or contract freely in the vertical direction.

[0028] When the support columns 532 contract, the heater 52 supported by the support columns 532 is brought closer to the chuck table 51. Then, the heater 52 brought closer to the chuck table 51 comes into contact with the non-chuck surface 512, causing the temperature of the chuck table 51 to rise. When the support pillars 532 are extended, the heater 52 supported by the support pillars 532 is separated from the chuck table 51. Then, the heater 52 separated from the chuck table 51 is separated from the non-chuck surface 512, and the temperature of the chuck table 51 is reduced.

[0029] As a specific example of the approaching / separating mechanism 53, FIG. 2 shows a means for moving the chuck table 51 toward or away from the heater 52. That is, as shown in FIG. 2, the contact / separation mechanism 53 includes a base 531 on which the heater 52 is installed, and a support 532 that supports the chuck table 51 from below so that the chuck table 51 is positioned above the heater 52. A heater 52 is fixed to the upper surface of the base 531 . The support pillar 532 is provided to extend upward from the upper surface of the base 531, and its upper end is connected to the chuck table 51. The non-chuck surface 512 of the chuck table 51 supported by the support pillar 532 is open downward. The support pillar 532 is configured to be able to freely extend or contract in the vertical direction.

[0030] When the support columns 532 contract, the chuck table 51 supported by the support columns 532 is brought closer to the heater 52. Then, the chuck table 51 brought closer to the heater 52 is brought into a heated state by bringing the non-chuck surface 512 into contact with the heater 52. When the support columns 532 are extended, the chuck table 51 supported by the support columns 532 is separated from the heater 52. Then, the chuck table 51 separated from the heater 52 is brought into a temperature decreasing state by separating the non-chuck surface 512 from the heater 52.

[0031] (1-4) Other mechanisms The manufacturing apparatus 50 may further include an energization mechanism that energizes and evaluates the electrical characteristics of the electronic component 30. A specific example of this energization mechanism is a probe card 55 (see FIG. 3) on which probes 551 are arranged to evaluate the electrical characteristics of the electronic component 30. In addition, the manufacturing apparatus 50 may be provided with an evaluation means for evaluating the electronic component 30. A specific example of this evaluation means is an appearance characteristic evaluation means (such as a non-contact optical evaluation means) for measuring the appearance characteristics of the electronic component 30. Additionally, the manufacturing apparatus 50 may include a mechanism for separating (picking up) the electronic component 30 from the support film 10.

[0032] (2) Holding film The support film used in the present invention will be described below. The holding film 10 is used to hold as many electronic components as possible together and to allow them to be shared among different processes. As shown in FIG. 4, the support film 10 has a support layer 102 for holding the electronic component 30 and a base layer 101 for supporting the support layer 102. This holding film 10 is used with the holding layer 102 on one side (upper side) and the electronic component 30 held on this holding layer 102, and with the base layer 101 on the other side (lower side), the base layer 101 is adsorbed onto the chuck table 51. The total thickness of the support film 10 is not particularly limited, but can be, for example, 50 μm to 300 μm, preferably 55 μm to 250 μm, and more preferably 100 μm to 200 μm.

[0033] The support film 10 is usually used in a state where it is attached and stretched on a flat frame 12 (see FIGS. 1 to 3 and 6 to 9). Specific examples of this frame 12 include a ring frame and a grip ring. The frame 12 is used for the purpose of making it easier to handle the holding film 10 during transportation, etc. In other words, the frame 12 does not have the function of preventing the holding film 10 from sagging and wrinkling.

[0034] The layers and properties of the support film 10 will be described below. (2-1) Retention layer The holding layer 102 is a layer for holding a plurality of electronic components 30 in a line, and is made of an adhesive. The thickness of the support layer 102 is not particularly limited, but can be, for example, 5 μm to 50 μm. Furthermore, the thickness of the support layer 102 is preferably 5 μm to 40 μm, and more preferably 5 μm to 30 μm. When the thickness of the holding layer 102 is within the above range, the holding film 10 can ensure good holding performance for the electronic component 30 .

[0035] From the viewpoint of suitably picking up the electronic component 30, the holding layer 102 preferably has a property that the holding force is reduced by the application of heat or irradiation with energy rays. The adhesive used in the retaining layer 102 is not particularly limited, but examples of adhesives having the above properties include foaming adhesives whose adhesive strength is reduced or lost by heat application, and energy-curing adhesives whose adhesive strength is reduced or lost by energy ray irradiation.

[0036] Both the foaming type adhesive and the energy curing type adhesive contain at least a main adhesive agent. Examples of the main adhesive agent include acrylic adhesives, silicone adhesives, rubber adhesives, etc. These may be used alone or in combination of two or more. Among these, acrylic adhesives are preferred.

[0037] Examples of the acrylic adhesive include a homopolymer of an acrylic ester compound, a copolymer of an acrylic ester compound and a comonomer, etc. These may be used alone or in combination of two or more. Examples of the acrylic acid ester compound include methyl acrylate, ethyl acrylate, butyl acrylate, and 2-ethylhexyl acrylate, and these may be used alone or in combination of two or more. Further, examples of the comonomer include vinyl acetate, acrylonitrile, acrylamide, styrene, methyl (meth)acrylate, (meth)acrylic acid, hydroxyethyl methacrylate, dimethylaminoethyl methacrylate, glycidyl methacrylate, and maleic anhydride.

[0038] The adhesive may contain a crosslinking agent in addition to the main adhesive agent. Examples of the crosslinking agent include epoxy crosslinking agents (pentaerythritol polyglycidyl ether, etc.) and isocyanate crosslinking agents (diphenylmethane diisocyanate, tolylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, polyisocyanate, etc.). These crosslinking agents may be used alone or in combination of two or more. When the adhesive contains a crosslinking agent, the content of the crosslinking agent is preferably 10 parts by mass or less, based on 100 parts by mass of the entire adhesive. The adhesive strength of the adhesive can be adjusted by the content of the crosslinking agent. Specifically, the method described in JP 2004-115591 A can be used.

[0039] The foaming adhesive foams by heat application, thereby reducing the adhesive area between the support layer 102 and the electronic component 30, and thereby reducing the adhesive strength. This foaming adhesive contains a foaming agent in addition to the above-mentioned main adhesive agent. The foaming agent may be added to the main adhesive agent in a state encapsulated in microcapsules, in its original state, or in a state combined with the main adhesive agent. As for the microcapsules, examples of the material include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone, and the like.

[0040] Examples of the foaming agent include inorganic foaming agents and organic foaming agents. Examples of inorganic foaming agents include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium boron hydroxide, and various azides. Examples of organic blowing agents include fluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; hydrazine compounds such as paratoluenesulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis(benzenesulfonylhydrazide) and allylbis(sulfonylhydrazide); semicarbazide compounds such as p-toluylenesulfonylsemicarbazide and 4,4'-oxybis(benzenesulfonylsemicarbazide); triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; and N-nitroso compounds such as N,N'-dinitrosopentamethylenetetramine and N,N'-dimethyl-N,N'-dinitrosoterephthalamide.

[0041] The energy curable adhesive can be cured by irradiating the adhesive with energy rays, thereby reducing the adhesive strength. Examples of energy rays include ultraviolet rays, electron beams, and infrared rays. These energy rays may be used alone or in combination of two or more. Specific examples include ultraviolet-curable adhesives that are cured by ultraviolet rays.

[0042] In addition to the main adhesive agent, this energy-curable adhesive can contain a compound having a carbon-carbon double bond in its molecule (hereinafter simply referred to as a "curable compound") and a photopolymerization initiator that can initiate polymerization of the curable compound in response to energy rays. The curable compound is preferably a monomer, oligomer, and / or polymer that has a carbon-carbon double bond in its molecule and is curable by radical polymerization. Specific examples of the curable compound include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, etc. These may be used alone or in combination of two or more. When the adhesive contains a curable compound, the content of the curable compound is preferably 0.1 to 20 parts by weight per 100 parts by weight of the adhesive.

[0043] The intramolecular carbon-carbon double bond may be contained by the aforementioned adhesive base agent having it in the molecule. That is, for example, the adhesive base agent may be an energy-curable polymer having a carbon-carbon double bond in a side chain. In this way, when the adhesive base agent has a curable structure in the molecule, the aforementioned curable compound may or may not be blended.

[0044] The photopolymerization initiator is preferably a compound capable of generating radicals upon irradiation with energy rays. Specific examples include acetophenone-based photopolymerization initiators {methoxyacetophenone, etc.}, α-ketol compounds {4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxycyclohexylphenyl ketone, etc.}, ketal compounds {benzyl dimethyl ketal, etc.}, benzoin-based photopolymerization initiators {benzoin, benzoin alkyl ethers (benzoin methyl ether, benzoin isopropyl ether, benzoin isobutyl ether), etc.}, benzophenone-based photopolymerization initiators {benzophenone, benzoylbenzoic acid, etc.}, aromatic ketals {benzyl dimethyl ketal, etc.}, etc. These may be used alone or in combination of two or more. When the pressure-sensitive adhesive contains a photopolymerization initiator, the content of the photopolymerization initiator is preferably 5 to 15 parts by mass relative to 100 parts by mass of the pressure-sensitive adhesive.

[0045] (2-2) Base layer The base layer 101 is a layer provided for the purpose of improving the handling properties and mechanical properties of the support film 10 . The thickness of the base layer 101 is not particularly limited, but can be, for example, 50 μm or more and 200 μm or less, preferably 65 μm or more and 175 μm or less, and more preferably 80 μm or more and 150 μm or less.

[0046] The material used for the base layer 101 is not particularly limited, but it is preferable that the material has mechanical strength sufficient to withstand the heating environment in the heating process, and in particular, that the material can suppress thermal expansion and elongation that cause sagging and wrinkles. Usually, an elastomeric resin can be used as the material for the base layer 101.

[0047] Examples of the resin having elastomeric properties include thermoplastic elastomers and silicones, which may be used alone or in combination of two or more. Among these, those having thermoplastic properties are preferred, and therefore thermoplastic elastomers are preferred. The thermoplastic elastomer may be made of a block copolymer having a hard segment and a soft segment, may be made of a polymer alloy of a hard polymer and a soft polymer, or may have properties of both of these.

[0048] Specific examples of the thermoplastic elastomer include polyester-based thermoplastic elastomers, polyamide-based thermoplastic elastomers, styrene-based thermoplastic elastomers, olefin-based thermoplastic elastomers, vinyl chloride-based thermoplastic elastomers, polyimide-based thermoplastic elastomers (polyimide ester-based, polyimide urethane-based, etc.), etc. These may be used alone or in combination of two or more. Of these, polyester-based thermoplastic elastomers, polyamide-based thermoplastic elastomers, and polyimide-based thermoplastic elastomers are preferred, and polyester-based thermoplastic elastomers and / or polyamide-based thermoplastic elastomers are particularly preferred.

[0049] The polyester-based thermoplastic elastomer may have any structure except that the polyester component is used as the hard segment. As the soft segment, polyester, polyether, polyether ester, etc. can be used. These may be used alone or in combination of two or more. That is, for example, the polyester component constituting the hard segment can contain structural units derived from monomers such as dimethyl terephthalate, while the component constituting the soft segment can contain structural units derived from monomers such as 1,4-butanediol and poly(oxytetramethylene) glycol. More specifically, PBT-PE-PBT type polyester thermoplastic elastomers and the like can be mentioned.

[0050] The thermoplastic polyamide elastomer may have any structure except that the hard segment is a polyamide component. The soft segment may be made of polyester, polyether, polyether ester, or the like. These may be used alone or in combination of two or more. For example, polyamide components constituting the hard segment include polyamide 6, polyamide 11, and polyamide 12. These may be used alone or in combination of two or more. Various lactams and the like can be used as monomers for these polyamide components.

[0051] On the other hand, components constituting the soft segment can include structural units derived from monomers such as dicarboxylic acids and polyether polyols. Among these, polyether diols are preferred as polyether polyols, and examples thereof include poly(tetramethylene) glycol and poly(oxypropylene) glycol. These may be used alone or in combination of two or more. More specifically, examples thereof include polyetheramide type polyamide thermoplastic elastomers, polyesteramide type polyamide thermoplastic elastomers, and polyetheresteramide type polyamide thermoplastic elastomers.

[0052] Furthermore, the base layer 101 may contain a resin other than the elastomeric resin. Examples of such a resin include polyester, polyamide, polycarbonate, and acrylic resin. These may be used alone or in combination of two or more. Of these, polyester and / or polyamide are preferred, and specific examples include polyesters such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, and polybutylene naphthalate, and polyamides such as nylon 6 and nylon 12.

[0053] Furthermore, the resin used for the base layer 101 may contain additives such as plasticizers and softeners (mineral oil, etc.), fillers (carbonates, sulfates, titanates, silicates, oxides (titanium oxide, magnesium oxide), silica, talc, mica, clay, fibrous fillers, etc.), antioxidants, light stabilizers, antistatic agents, lubricants, colorants, etc. These additives may be used alone or in combination of two or more.

[0054] The film used as the material for the base layer 101 may be either unstretched or stretched, such as a uniaxially stretched film or a biaxially stretched film, regardless of whether it is stretched or not. The above-mentioned film may be either a single-layer film or a multi-layer film having a plurality of layers. It is preferable to use a surface-treated film for the base layer 101 from the viewpoint of improving adhesion to the support layer 102. Specific examples of surface treatments include corona treatment, plasma treatment, undercoat treatment, and primer coat treatment.

[0055] (2-3) Other layers The support film 10 may consist of only the base layer 101 and the support layer 102, but may also have other layers. Examples of other layers include an interface strength improving layer that improves the interface strength with the adhesive, and a migration prevention layer that suppresses migration of low molecular weight components from the base layer 101 to the support layer 102. These may be used alone or in combination of two or more.

[0056] (2-4) Physical properties The adhesive strength of the retaining film 10 having the retaining layer 102 is not particularly limited. The adhesive strength is preferably 0.1 N / 25 mm or more and 10 N / 25 mm or less when measured in a 180-degree peel strength test after the retaining film 10 is attached to the surface of a silicon mirror wafer and left for 60 minutes. When the adhesive strength is within the above range, the retaining film 10 can ensure good adhesion to the electronic component 30. The adhesive strength is more preferably 0.2 N / 25 mm or more and 9 N / 25 mm or less, and even more preferably 0.3 N / 25 mm or more and 8 N / 25 mm or less. The measurement method for the 180-degree peel strength test complies with JIS Z0237:2009, except that the object to which the support film 10 is attached is a silicon mirror wafer and the peel speed is 300 mm / min.

[0057] The support film 10 having the base layer 101 has an elastic modulus of E'(160) at 160°C and an elastic modulus of E'(25) at 25°C, and the ratio R E It is preferable that (=E'(160) / E'(25)) is a relatively large value. Specifically, the ratio R E (=E'(160) / E'(25)) is preferably 0.001 or more and 0.6 or less, and 0.02≦R E ≦0.45 is more preferable, and 0.05≦R E ≦0.3 is more preferred. ratio R E When the thickness is in the above range, the holding film 10 maintains flexibility to such an extent that it can be used for picking up the electronic component 30, and is less likely to develop sagging wrinkles.

[0058] The above elastic modulus represents the tensile elastic modulus (unit: MPa). Also, the ratio R E is a value obtained from the elastic modulus E' of the support film 10, that is, a value obtained from the support film 10 having not only the base layer 101 but also other layers (for example, the support layer 102, etc.). However, if the layers other than the base layer 101 have a ratio R E The effect on R is generally very small, so this ratio R E is the elastic modulus E' of the base layer 101 alone 101 It is believed that the value obtained will be substantially equivalent to the value obtained from Among the materials used for the base layer 101 described above, the above ratio R E Examples of materials that satisfy the range include PBT-PE-PBT type polyester thermoplastic elastomers, which are polyester thermoplastic elastomers, polyetheramide type polyamide thermoplastic elastomers, polyesteramide type polyamide thermoplastic elastomers, and polyetheresteramide type polyamide thermoplastic elastomers, which are polyamide thermoplastic elastomers. Among these, PBT-PE-PBT type polyester thermoplastic elastomers (with a ratio R E ≒0.17) is particularly preferred.

[0059] 0.001≦R E Within the range of ≦0.6, E′(25) is preferably 3500 MPa or less (E′(25)≦3500 MPa). Although there is no restriction on the lower limit of E'(25), it is usually 35 MPa≦E'(25). E'(25) is more preferably 40 MPa≦E'(25)≦1000 MPa, more preferably 45 MPa≦E'(25)≦500 MPa, and even more preferably 45 MPa≦E'(25)≦300 MPa. The value of E'(25) may be different in the MD and TD directions of the base layer 101, but is preferably within the above range in both directions.

[0060] E'(160) is not particularly limited, but is preferably 0.1 MPa ≦ E'(160) ≦ 600 MPa, more preferably 0.15 MPa ≦ E'(160) ≦ 300 MPa, even more preferably 0.2 MPa ≦ E'(160) ≦ 100 MPa, and particularly preferably 1 MPa ≦ E'(160) ≦ 50 MPa. The value of E'(160) may differ between the MD and TD directions of the base layer 101, but is preferably within the above range in both directions.

[0061] The above-mentioned elastic modulus E' is measured by a dynamic mechanical analysis (DMA) device. Specifically, the sample size is 10 mm wide and 20 mm long between chucks, and the tensile modulus is measured from -50°C to 200°C under measurement conditions of a frequency of 1 Hz and a temperature rise rate of 5°C / min. The data for each temperature is then read from the obtained data. That is, the value read from the measurement data of the tensile modulus of elasticity at 25°C is taken as the modulus of elasticity E'(25), and the value read from the measurement data at 160°C is taken as the modulus of elasticity E'(160).

[0062] The linear thermal expansion coefficient (α 10 ) is not limited, but is preferably 300 ppm / K or less (α 10 The linear thermal expansion coefficient is preferably 280 ppm / K or less (α 10 ≦280 ppm / K), and 250 ppm / K or less (α 10 The linear thermal expansion coefficient of the support film 10 is usually 100 ppm / K or more (100 ppm / K≦α 10 ) The material of the base layer 101 used in the support film 10 having such a linear thermal expansion coefficient is the above-mentioned thermoplastic elastomer. The linear thermal expansion coefficient is measured in accordance with JIS K7197 and is the thermal expansion coefficient within the temperature range of 25°C to 150°C.

[0063] (3) Electronic Components The electronic component used in the present invention will now be described. The electronic component 30 of the present invention includes the following (A) and (B). : Semiconductor chip (silicon die). Note that semiconductor chips (silicon die) are obtained by dicing a semiconductor wafer. : Package parts. Package parts are formed by dividing a package array in which multiple semiconductor chips are sealed in an array, or by forming them individually without going through the package array.

[0064] Regarding the above item (B), the sealing material used to seal the package components is not limited, and organic materials (resins) and inorganic materials (ceramics, crystallized glass, glass, etc.) can be used. Furthermore, with regard to the above-mentioned (B), package arrays include package arrays that do not undergo rewiring after sealing, package arrays using the fan-out method (eWLB method) in which rewiring is performed after sealing, and package arrays using the wafer-level chip size package (WLCSP) method.

[0065] Furthermore, the electronic component 30 usually has an electrode 31 that can be electrically connected to the outside. The electronic component 30 may have only one electrode 31, or may have a plurality of electrodes 31. The form of the electrode that can be electrically connected to the outside is not limited, and in the case of semiconductor components, it includes, for example, a pad electrode, a bonding electrode, an exposed surface of a through electrode, and the like. Furthermore, package components include pad-type electrodes, pin-type electrodes, ball-type electrodes, lead frame-type electrodes, and the like.

[0066] That is, package components include PGA (Pin Grid Array) type, CPGA (Ceramic Pin Grid Array) type, PPGA (Plastic Pin Grid Array) type, SPGA (Staggered Pin Grid Array) type, BGA (Ball Grid Array) type, LGA (Land Grid Array) type, QFP (Quad Flat Package) type, PQFP (Plastic Quad Flat Package) type, QFN (Quad Flat Non-leaded) type, QFJ (Quad Flat J-leaded) type, PQFJ (Plastic Quad Flat J-leaded), TCP (Tape Carrier Package) type, CSP (Chip Size Package) type, etc.

[0067] As a specific example, as shown in FIGS. 5(a) and 5(b), a plurality of electronic components 30 are arranged and held on the holding layer 102 of the holding film 10 at equal intervals in the vertical and horizontal directions. Although the number of electronic components 30 held in the holding film 10 is four in the drawing, the number is not particularly limited. This number can be, for example, two or more (usually 100,000 or less), or even ten or more, or even 100 or more.

[0068] The electronic components 30 are arranged on the surface of the support layer 102 of the support film 10 with the electrodes 31 exposed to the outside so that the electrodes 31 can be electrically connected to the outside. That is, the electronic components 30 are usually arranged so that the electrodes 31 are not held by the support layer 102 . 5(a) and 5(b), a plurality of electrodes 31 are provided on the upper surface of the electronic component 30. The electronic components 30 are bonded at their lower surfaces to the holding layer 102 of the holding film 10 so that the electrodes 31 are not held by the holding layer 102.

[0069] The electronic components 30 may be arranged so that the electrodes 31 are exposed not only on the top surface but also on the peripheral surface, but it is preferable to be able to use electrical conductivity evaluation using contact needles of a probe card or the like. For this reason, the electronic components 30 are preferably arranged so that the electrodes 31 face upward, that is, so that the electrodes 31 are exposed on the top surface.

[0070] [2] Manufacturing methods for electronic components The method for manufacturing an electronic component of the present invention is a method for manufacturing an electronic component using the above-described electronic component manufacturing apparatus 50. This manufacturing method includes a fixing step of fixing the holding film 10, one side of which holds the electronic components 30, to the chuck surface 511 of the chuck table 51 by sucking the other side of the holding film 10 while the chuck table 51 and the heater 52 are spaced apart (see FIG. 6 ); and a heating step of bringing the heater 52 into contact in a heated state with the non-chuck surface 512 of the chuck table 51 to which the holding film 10 is fixed (see FIG. 7).

[0071] It should be noted that the electronic component 30 generally remains structurally unchanged after undergoing the fixing step and heating step. That is, the electronic component that is the subject of the present invention remains an electronic component even after undergoing the fixing step and heating step. However, in the present invention, if the electronic component undergoes another process after the heating process in which another configuration is added, the component that has undergone this other process is also conveniently referred to as an electronic component.

[0072] (1) Fixing process The fixing step is a step of fixing the holding film 10, one side of which holds the electronic components 30, to the chuck surface 511 of the chuck table 51 by sucking from the other side of the holding film 10 (see FIG. 6). In order to make the drawing easier to understand, FIG. 6 omits the contact / separation mechanism 53 and shows a simplified view of the manufacturing apparatus 50. However, as described above, the separation between the chuck table 51 and the heater 52 is performed by the contact / separation mechanism 53 (see FIGS. 1 and 2).

[0073] The fixing step is performed in a state where the chuck table 51 and the heater 52 are spaced apart from each other. In other words, the fixing step is performed with the chuck table 51 in a cooled state. That is, in the fixing process, the holding film 10, with multiple electronic components 30 held on one side (the upper side in Figure 6), is sucked from the other side (the lower side in Figure 6) against the chuck surface 511 of the chuck table 51, which has been cooled.

[0074] Generally, when the holding film 10 is sucked against the chuck surface 511, more specifically, when the holding film 10 is brought close to the heated chuck surface 511, the holding film 10 is prone to sagging and wrinkles. In other words, when the chuck table 51 is in a heated state, the holding film 10, when sucked from the other side, is heated by the thermal convection generated on the chuck surface 511, heated by the heat from the chuck surface 511 and thermally expands, or the weight of the electronic component 30 held on one side is added, causing sagging and wrinkles.

[0075] As described above, the manufacturing apparatus 50 can bring the temperature of the chuck table 51 into a lowered state by separating the chuck table 51 from the heater 52. The fixing step is performed with the chuck table 51 in a lowered state (see FIG. 6). In the fixing step, the chuck table 51 is kept in a cooled state, so that the generation of thermal convection on the chuck surface 511 and the heating of the holding film 10 are unlikely to occur.

[0076] That is, in the fixing step of the present invention, the holding film 10 that is brought close to the chuck surface 511 is not placed in a heated environment because the chuck table 51 is in a cooled state. Therefore, the holding film 10 is not heated by the thermal convection generated on the chuck surface 511 or by the influence of the heat from the chuck surface 511, and the occurrence of sagging wrinkles is suppressed. In other words, the fixing step of the present invention is performed in a substantially room temperature environment, not in a heated environment, by performing the fixing step with the chuck table 51 in a cooled state, so that slack and wrinkles do not occur in the holding film 10.

[0077] Furthermore, the holding film 10 after the fixing step is fixed to the chuck surface 511 of the chuck table 51, so that its shape is fixed. Therefore, in the steps after the fixing step, the holding film 10 is fixed to the chuck surface 511 of the chuck table 51, thereby preventing the occurrence of loose wrinkles.

[0078] (2)Heating process The heating step is a step of bringing the heater 52 into contact in a heated state with the non-chuck surface 512 of the chuck table 51 to which the holding film 10 is fixed (see FIG. 7). In order to make the drawing easier to understand, Figure 7 omits the contact / separation mechanism 53 and depicts a simplified version of the manufacturing apparatus 50, but contact between the chuck table 51 and the heater 52 is performed by the contact / separation mechanism 53 as described above (see Figures 1 and 2).

[0079] The heating step is performed with the chuck table 51 and the heater 52 in contact with each other. That is, in the heating step, the heater 52 in the heated state heats the chuck table 51 that it comes into contact with, thereby bringing the chuck table 51 into a heated state. Then, the electronic component 30 held by the holding film 10 is placed in a heated environment and heated by the chuck table 51 in a heated state.

[0080] In other words, in the heating step, the heater 52 does not directly heat the electronic component 30, but indirectly heats the electronic component 30 via the chuck table 51. Therefore, whether or not to heat the electronic component 30 can be selectively performed by bringing the chuck table 51 into contact with or separating the heater 52 from the chuck table 51. Furthermore, in a fixing step, which is a step preceding the heating step, the holding film 10 is fixed in shape by being fixed to the chuck surface 511 of the chuck table 51. That is, since the shape of the holding film 10 is fixed during the heating step, the occurrence of slack and wrinkles is prevented.

[0081] The timing at which the heater 52 is put into a heating state is not particularly limited. That is, the heater 52 can be brought into a heated state just before contact with the chuck table 51, but it is preferable that the heater 52 be kept in a heated state at all times. In this case, the time loss required for the heater 52 to reach a heated state in the heating step can be reduced, thereby improving manufacturing efficiency. When the heater 52 is constantly maintained in a heated state, the influence of heat from the heater 52 on the holding film 10 in the fixing step can be shielded by the chuck table 51 in a cooled state.

[0082] In the heating step, the temperature range in the heating environment is not particularly limited, but can usually be set to a temperature range according to the energization step, which is a step subsequent to the heating step. That is, from the viewpoint of manufacturing efficiency and cost reduction, after the electronic component 30 is heated in the heating environment in the heating step, the energization step, etc. can be carried out as a step subsequent to the heating step. Specifically, the lower limit of the temperature range in the heating step is preferably, for example, 50° C. or higher, further 100° C. or higher, or even 150° C. or higher. The upper limit of the temperature range in the heating step is usually 250° C. or lower.

[0083] (3) Other processes This method may include steps other than the above-mentioned immobilization step and adsorption step. This method may include, for example, a power-on step and a power-off step as steps subsequent to the heating step. Furthermore, this method can include, as a step preceding the fixing step, an arrangement step of arranging a plurality of electronic components 30 on one surface of the support film 10 with the electrodes 31 exposed. Additionally, this method may include a pick-up step of separating the electronic component 30 from one surface side of the support film 10 as a step subsequent to the energizing step or the releasing step. The energization process and the de-energization process will be described below.

[0084] (3-1)Electrification process The current application step is a step of applying current from the outside to the electrodes 31 of the electronic component 30 exposed on one surface side of the support film 10 . That is, the current-flow step is a step of conducting a current-flow evaluation of the electrical characteristics of the electronic component 30 by externally applying current to the electrodes 31 of the electronic component 30 (see FIG. 8). The electrical conductivity evaluation is performed for each electronic component 30 held on the holding film 10 by utilizing the electrodes 31 exposed to the outside of each electronic component 30 . The number of electrodes 31 exposed to the outside of one electronic component 30 may be one, but is usually multiple. The electrical conductivity evaluation can be performed using only some of the multiple exposed electrodes 31, or can be performed using all of them.

[0085] The contents and purposes of the energization evaluation are not limited, and examples thereof include operation checks and accelerated durability tests. More specifically, this includes, for example, DC tests that can evaluate the presence or absence of open circuits or short circuits, and evaluate input voltage, output voltage, and output current, etc., AC tests that can evaluate output waveforms, and functional tests such as evaluation of the possibility and speed of write and read operations, evaluation of retention time, and evaluation of mutual interference. That is, examples include a final test, a structured test, a scan test, an adaptive test, etc. for packaged components, and a wafer test, a burn-in test, etc. for semiconductor components. These may be used alone or in combination of two or more.

[0086] Furthermore, in electrical conductivity evaluation, a probe (probe) or a probe card (substrate with probes) equipped with a plurality of probes is usually used. Specifically, electrical conductivity evaluation using a probe or probe card is performed by arranging multiple electronic components 30 on one side of the support film 10, contacting the probe with the electrode 31, and passing electrical current from the probe to the electrode 31. In this electrical conductivity evaluation, the electronic components 30 to be evaluated may be some of the electronic components 30 held by the holding film 10, or may be all of the electronic components 30. Whether to evaluate the electrical conductivity of some or all of the electronic components 30 can be selected according to need, but from the standpoint of manufacturing efficiency and cost reduction, it is preferable to evaluate the electrical conductivity of as many electronic components 30 as possible at the same time. That is, for example, with this method, the number of electronic components that can be simultaneously subjected to electrical evaluation can be increased to 2 or more (usually 100,000 or less), further increased to 10 or more, and further increased to 100 or more.

[0087] As shown in FIG. 8, in the electrical conductivity evaluation, a probe card 55 having a plurality of probes 551 formed thereon is brought into contact with corresponding locations on the electronic component 30 to establish an electrical connection, and a determination can be made, for example, as to whether a signal is correct or not between the probes 551 and a circuit formed on the electronic component 30 (probe test). The probe card 55 is not particularly limited, and can be designed according to the number of electronic components 30 to be simultaneously evaluated and the arrangement of the electronic components 30 on one surface of the support film 10. In particular, the present invention makes it possible to use a large probe card equipped with a large number of probes that can be simultaneously connected to a plurality of electrodes of a plurality of electronic components.

[0088] In the energization step, the heater 52 and the chuck table 51 are brought into contact with each other, so that the electronic component 30 can be evaluated for energization in a heated environment. The temperature range in the heating environment in the current application step varies depending on the application of the electronic component 30, and is not particularly limited. Specifically, the lower limit of the temperature range in the current application step is preferably, for example, 50° C. or higher, further 100° C. or higher, or even 150° C. or higher. The upper limit of the temperature range in the current application step is usually 250° C. or lower. In particular, when the purpose of evaluation is a high-temperature operation test, the lower limit of the temperature range in the current application step can be preferably, for example, 120°C or higher, further 140°C or higher, or even 160°C or higher.

[0089] (3-2) Release process The releasing step is a step of releasing the holding film 10 from the chuck surface 511 of the chuck table 51 (see FIG. 9). The release step can be performed with the chuck table 51 and the heater 52 in contact with each other, but is preferably performed with the chuck table 51 and the heater 52 separated from each other.

[0090] That is, the chuck table 51 is brought into a temperature-lowering state by being separated from the heater 52. Therefore, when the chuck table 51 is in a temperature-lowering state, even if the holding film 10 is released from the chuck surface 511, the occurrence of slack and wrinkles in the holding film 10 can be suppressed. Furthermore, if the release process is performed with the chuck table 51 and the heater 52 spaced apart, the chuck table 51 can be cooled while the release process is being performed, meaning that time is available for the chuck table 51 to cool down.

[0091] The releasing step may be performed by any method as long as it can release the holding film 10 from the chuck surface 511, and there are no particular limitations on the specific method. As a specific example, the releasing step can be achieved by releasing the suction of the holding film 10 by the chuck table 51. [Industrial Applicability]

[0092] The electronic component manufacturing apparatus and method of the present invention are widely used in the manufacture of electronic components, and are particularly suitable for use in the manufacture of components with excellent productivity, since the holding film that holds the electronic components while also having the function of heating the electronic components has the property of suppressing the occurrence of sagging and wrinkles when the electronic components are heated. [Explanation of symbols]

[0093] 10; support film; 101; base layer; 102; support layer; 12; frame body; 30;Electronic components, 31;Electrodes, 50;Electronic component manufacturing equipment, 51; chuck table, 511; chuck surface, 512; non-chuck surface, 52; heater, 53; Approach and separation mechanism, 531; Base, 532; Support column, 533; Through hole, 55;probe card, 551;probe.

Claims

1. A manufacturing apparatus having a function of heating an electronic component, a chuck table that sucks the holding film, one side of which holds the electronic components, from the other side of the holding film to fix it to a chuck surface; a heater that contacts a non-chuck surface of the chuck table and heats the electronic component; a contact / separation mechanism that brings the chuck table and the heater into contact with or separates them from each other, The electronic component manufacturing apparatus is characterized in that the approaching / separating mechanism, as a means for moving the chuck table closer to or further away from the heater, comprises a base on which the heater is installed and a support pillar that supports the chuck table from below so that the chuck table is positioned above the heater, and the support pillar is configured to be freely extendable and contractible in the vertical direction.

2. The electronic component manufacturing apparatus according to claim 1 , further comprising an energization mechanism for energizing and evaluating the electrical characteristics of the electronic component.

3. A method for manufacturing electronic components using an electronic component manufacturing device that includes a chuck table that sucks a holding film on one side of which an electronic component is held from the other side of the holding film and fixes it to a chuck surface, a heater that contacts the non-chuck surface of the chuck table to heat the electronic component, and a contact / separation mechanism that contacts or separates the chuck table and the heater, a fixing step of fixing a holding film, one side of which holds an electronic component, to a chuck surface of the chuck table by sucking the other side of the holding film while the chuck table and the heater are spaced apart; a heating step of bringing the heater into contact in a heated state with the non-chuck surface of the chuck table to which the holding film is fixed.

4. the holding film has a holding layer for holding the electronic component and a base layer for supporting the holding layer, The ratio R of the elastic modulus E'(160) at 160 ° C. to the elastic modulus E'(25) at 25 ° C. Ｅ 4. The method for producing an electronic component according to claim 3, wherein (=E'(160) / E'(25)) is 0.001 or more and 0.6 or less, and E'(25) is 3500 MPa or less.

5. The method for manufacturing an electronic component according to claim 4, wherein the supporting film has a linear thermal expansion coefficient of 100 ppm / K or more and 300 ppm / K or less.

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