Semiconductor chip stack, electronic component device, and method for manufacturing semiconductor chip stack

Abstract

A semiconductor chip stack comprising: a plurality of semiconductor chips; electrodes that are electrically connected to the plurality of semiconductor chips; and an insulating layer that is interposed between the plurality of semiconductor chips, wherein the insulating layer contains a resin.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor chip stack, an electronic component device, and a method for manufacturing a semiconductor chip stack. [Background technology]

[0002] In recent years, mounting technology for electronic component devices has been changing from planar mounting to 2.5D (two and a half dimensions) mounting and 3D (three dimensions) mounting in order to increase integration density. In electronic device components that use 2.5D packaging, logic, memory, and other elements are placed on a substrate, with the memory structure consisting of multiple stacked semiconductor chips. In electronic device components that use 3D packaging, the logic as well as the memory are divided into multiple semiconductor chips.

[0003] JP 2020-136389 A describes an integrated circuit formed by stacking multiple semiconductor circuits, each of which is electrically connected by embedded electrodes, and an insulating layer made of an inorganic material such as SiO2 is provided around the embedded electrodes. Summary of the Invention [Problem to be solved by the invention]

[0004] In a structure where multiple semiconductor chips are stacked, the distance between the chips is narrow, so there is a high risk that tiny foreign objects (particles) will get caught between the chips and form voids, resulting in poor connections.If the insulating layer between the semiconductor chips is made of a hard material such as SiO2, the particles cannot be absorbed into the insulating layer, and voids are likely to form between the semiconductor chips. In view of the above circumstances, an object of one aspect of the present disclosure is to provide a semiconductor chip stack and an electronic component device in which connection defects caused by particles are suppressed. [Means for solving the problem]

[0005] Specific means for achieving the above object are as follows. <1> A semiconductor chip stack comprising: a plurality of semiconductor chips; electrodes electrically connecting the plurality of semiconductor chips; and an insulating layer disposed between the plurality of semiconductor chips, the insulating layer including a resin. <2> The distance between the plurality of semiconductor chips is 50 μm or less. <1> The semiconductor chip stack according to claim 1. <3> the insulating layer is a cured product of a composition containing an epoxy resin; <1> or <2> The semiconductor chip stack according to claim 1. <4> The epoxy resin comprises an epoxy compound A having one or more epoxy groups and one or more branched divalent saturated hydrocarbon groups having 20 to 60 carbon atoms; and at least one epoxy compound B having two or more epoxy groups, a siloxane bond, and an alkylene group having 8 to 20 carbon atoms bonded to a silicon atom constituting the siloxane bond. <3> The semiconductor chip stack according to claim 1. <5> <1> ~ <4> 10. An electronic component device comprising the semiconductor chip stack according to claim 9. <6> At least one selected from the group consisting of a memory and a logic including the semiconductor chip stack, <5> The electronic component device according to claim 1. <7> preparing a plurality of semiconductor chips each having an electrode on at least one surface; forming a resin layer on the surfaces of the plurality of semiconductor chips having the electrodes; and placing the surfaces of the plurality of semiconductor chips on which the resin layer is formed facing each other. <8> preparing a plurality of semiconductor chips each having an electrode on at least one surface; placing the surfaces of the plurality of semiconductor chips having the electrodes facing each other; and filling gaps between the plurality of semiconductor chips with resin. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, there are provided a semiconductor chip stack and an electronic component device in which connection failures caused by particles are suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] 1A to 1C are diagrams schematically illustrating an example of a method for manufacturing a semiconductor chip stack. [Figure 2] 1A to 1C are diagrams schematically illustrating an example of a method for manufacturing a semiconductor chip stack. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, components (including element steps, etc.) are not essential unless otherwise specified. The same applies to numerical values ​​and their ranges, and do not limit the present invention. In the present disclosure, the term "process" includes not only a process that is independent of other processes, but also a process that cannot be clearly distinguished from other processes as long as the purpose of the process is achieved. In the present disclosure, numerical ranges indicated using "to" include the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this disclosure, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this disclosure, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples. In the present disclosure, each component may contain multiple substances corresponding to the component. When multiple substances corresponding to each component are present in the composition, the content or amount of each component means the total content or amount of the multiple substances present in the composition, unless otherwise specified. When embodiments of the present disclosure are described with reference to the drawings, the configuration of the embodiment is not limited to the configuration shown in the drawings. Furthermore, the sizes of the components in each drawing are conceptual, and the relative size relationships between the components are not limited to these.

[0009] <Semiconductor chip stack> The semiconductor chip stack of the present disclosure comprises a plurality of semiconductor chips, electrodes that electrically connect the plurality of semiconductor chips, and an insulating layer that is disposed between the plurality of semiconductor chips, and the insulating layer contains a resin.

[0010] In general, an insulating layer made of SiO2 is provided between the semiconductor chips that make up the semiconductor chip stack, insulating the periphery of the electrodes that electrically connect the semiconductor chips. In the semiconductor chip stack of the present disclosure, the insulating layer contains a resin. Therefore, if particles are sandwiched between the semiconductor chips, the insulating layer deforms and can capture the particles. As a result, voids caused by particles are less likely to occur between the semiconductor chips, and connection failures can be effectively suppressed.

[0011] The distance between the plurality of semiconductor chips included in the semiconductor chip stack may be independently 50 μm or less, 20 μm or less, or 10 μm or less. The distance between the plurality of semiconductor chips included in the semiconductor chip stack may be independently 1 μm or more, 2 μm or more, or 5 μm or more.

[0012] The thickness of each of the plurality of semiconductor chips included in the semiconductor chip stack may be independently 50 μm or less, 20 μm or less, or 10 μm or less. The thickness of each of the semiconductor chips included in the semiconductor chip stack may be independently 1 μm or more, 2 μm or more, or 5 μm or more.

[0013] In the semiconductor chip stack, in addition to a plurality of semiconductor chips stacked in the vertical direction (thickness direction), a plurality of semiconductor chips may also be arranged side by side in the horizontal direction (direction perpendicular to the thickness direction).

[0014] The material of the electrodes included in the semiconductor chip stack is not particularly limited, and examples thereof include metals such as Cu, Au, Al, Sn, Ni, W, and Pb, and alloys containing these metals. The electrode may be made of only one type of metal, or two or more types of metals. Examples of an electrode made of two or more types of metal include an electrode having a main body and a plating layer, each made of a different metal, and an electrode having a main body and a joining portion (a portion that joins multiple electrodes), each made of a different metal. The electrodes may or may not penetrate the semiconductor chip.

[0015] The semiconductor chip stack may further include an inorganic insulating layer. In this case, it is preferable that the inorganic insulating layer be disposed between the semiconductor chip and the insulating layer containing resin, from the viewpoint of suppressing connection defects due to particles. Examples of inorganic insulating layers include layers containing SiO2, Al2O3, Si3N4, MgF2, and the like.

[0016] From the viewpoint of heat resistance, the insulating layer is preferably a cured product of a composition containing an epoxy resin (epoxy resin composition).

[0017] The epoxy resin composition is preferably liquid at room temperature. In the present disclosure, "room temperature" refers to 25°C, and "liquid" refers to a substance that exhibits fluidity and viscosity, with a viscosity, a measure of viscosity, of 0.0001 Pa·s to 100 Pa·s. Furthermore, "liquid state" refers to a liquid state.

[0018] In this disclosure, viscosity is defined as the value obtained by multiplying the measured value when an EHD rotational viscometer is rotated at a predetermined rotation speed for 1 minute at 25°C by a predetermined conversion factor. The above measurement value is obtained for a liquid maintained at 25±1°C using an EHD rotational viscometer equipped with a cone rotor with a cone angle of 3° and a cone radius of 14 mm. The rotation speed and conversion factor vary depending on the viscosity of the liquid to be measured. Specifically, the viscosity of the liquid to be measured is roughly estimated in advance, and the rotation speed and conversion factor are determined based on the estimated value.

[0019] When measuring viscosity, if the estimated viscosity of the liquid to be measured is 0 Pa·s or more but less than 1.25 Pa·s, the rotation speed shall be 10 rpm and the conversion factor shall be 0.5; if the estimated viscosity is 1.25 Pa·s or more but less than 2.5 Pa·s, the rotation speed shall be 5 rpm and the conversion factor shall be 1; if the estimated viscosity is 2.5 Pa·s or more but less than 6.25 Pa·s, the rotation speed shall be 2.5 rpm and the conversion factor shall be 2; and if the estimated viscosity is 6.25 Pa·s or more but less than 12.5 Pa·s, the rotation speed shall be 1 rpm and the conversion factor shall be 5.

[0020] From the viewpoint of fluidity, the viscosity of the epoxy resin composition at 25°C is preferably 100.0 Pa·s or less, more preferably 50.0 Pa·s or less, and even more preferably 30.0 Pa·s or less. From the viewpoint of ease of handling, the viscosity of the epoxy resin composition at 25°C is preferably 0.1 Pa·s or more.

[0021] From the viewpoint of filling properties under high temperature conditions, the viscosity of the epoxy resin composition at 110°C is preferably 0.20 Pa·s or less, and more preferably 0.15 Pa·s or less. The viscosity of the epoxy resin composition at 110°C is measured using a rheometer AR2000 (manufactured by TA Instruments, aluminum cone 40 mm, shear rate 32.5 / sec).

[0022] The epoxy resin composition preferably has a thixotropic index [(viscosity at 2.5 rpm) / (viscosity at 10 rpm)], which is the ratio of the viscosity at a rotation speed of 2.5 rpm to the viscosity at a rotation speed of 10 rpm, measured at 25°C using an E-type viscometer, of 0.5 to 1.5, more preferably 0.8 to 1.2.

[0023] (epoxy resin) The type of epoxy resin contained in the epoxy resin composition is not particularly limited and can be selected depending on the desired properties of the insulating layer, the method for forming the insulating layer, etc. One type of epoxy resin may be used alone, or two or more types may be used in combination.

[0024] Specific examples of epoxy resins include novolac-type epoxy resins such as phenol novolac-type epoxy resins and cresol novolac-type epoxy resins; bisphenol-type epoxy resins such as bisphenol A-type epoxy resins and bisphenol F-type epoxy resins; aromatic glycidylamine-type epoxy resins such as N,N-diglycidylaniline, N,N-diglycidyltoluidine, diaminodiphenylmethane-type glycidylamine, and aminophenol-type glycidylamine; aralkyl-type epoxy resins such as phenol aralkyl-type epoxy resins having at least one of a phenylene skeleton or a biphenylene skeleton, and naphthol aralkyl-type epoxy resins having at least one of a phenylene skeleton or a biphenylene skeleton; and hydroquinone-type epoxy resins. resins, biphenyl-type epoxy resins, stilbene-type epoxy resins, triphenolmethane-type epoxy resins, triphenolpropane-type epoxy resins, alkyl-modified triphenolmethane-type epoxy resins, triazine nucleus-containing epoxy resins, dicyclopentadiene-modified phenol-type epoxy resins, naphthol-type epoxy resins, naphthalene-type epoxy resins, alicyclic epoxy resins such as vinylcyclohexene dioxide, dicyclopentadiene oxide, and alicyclic diepoxy adipide; and bifunctional aliphatic epoxy compounds having two epoxy groups in the molecule, such as alkylene glycol diglycidyl ether, poly(alkylene glycol) diglycidyl ether, and alkenylene glycol diglycidyl ether.

[0025] The weight-average molecular weight of the epoxy resin is not particularly limited, but is preferably 500 to 30,000, more preferably 1,000 to 20,000, and even more preferably 1,500 to 10,000.

[0026] The weight average molecular weight of the epoxy resin is measured by gel permeation chromatography (GPC).

[0027] The epoxy equivalent (molecular weight / number of epoxy groups) of the epoxy resin is not particularly limited, and is preferably 100 g / eq to 1000 g / eq, and more preferably 150 g / eq to 500 g / eq, for example.

[0028] The epoxy equivalent of the epoxy resin is a value measured by a method in accordance with JIS K 7236:2009.

[0029] The epoxy resin preferably contains at least one of the following epoxy compound A and epoxy compound B. Epoxy compound A: an epoxy compound having one or more epoxy groups and one or more branched divalent saturated hydrocarbon groups having 20 to 60 carbon atoms. Epoxy compound B: an epoxy compound having two or more epoxy groups, a siloxane bond, and an alkylene group having 8 to 20 carbon atoms bonded to a silicon atom constituting the siloxane bond.

[0030] The epoxy resin composition containing an epoxy resin containing at least one of epoxy compound A and epoxy compound B has a lower storage modulus of the cured product than an epoxy resin composition that does not contain the epoxy resin, which makes it easier for particles trapped between semiconductor chip stacks to be captured by the insulating layer, thereby more effectively suppressing connection defects.

[0031] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the total content of epoxy compound A and epoxy compound B relative to the total mass of the epoxy resin is preferably 5% by mass or more, more preferably 10% by mass or more, and even more preferably 15% by mass or more. From the viewpoint of reducing the thermal expansion coefficient of the cured product of the epoxy resin composition, the total content of epoxy compound A and epoxy compound B relative to the total mass of the epoxy resin is preferably 40% by mass or less, more preferably 35% by mass or more, even more preferably 30% by mass or less, and particularly preferably 25% by mass or less.

[0032] (Epoxy compound A) The epoxy compound A has one or more branches in its molecule and a divalent saturated hydrocarbon group having 20 to 60 carbon atoms. Hereinafter, the divalent saturated hydrocarbon group having one or more branches and 20 to 60 carbon atoms contained in the molecule of epoxy compound A will also be referred to as a "specific saturated hydrocarbon group."

[0033] In the present disclosure, the term "divalent saturated hydrocarbon group" refers to a divalent hydrocarbon group (alkylene group) that does not contain a double bond. In the present disclosure, the term "branched" refers to a monovalent saturated hydrocarbon group bonded to a tertiary or quaternary carbon atom (a carbon atom that is the base of a branch) contained in a specific saturated hydrocarbon group.

[0034] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the specific saturated hydrocarbon group preferably has 25 or more carbon atoms, more preferably 30 or more carbon atoms, and even more preferably 35 or more carbon atoms. From the viewpoint of ensuring the strength of the cured product of the epoxy resin composition, the specific saturated hydrocarbon group preferably has 55 or less carbon atoms, more preferably 50 or less, and even more preferably 45 or less carbon atoms. In the present disclosure, the number of carbon atoms in the specific saturated hydrocarbon group includes the number of carbon atoms in the branches of the specific saturated hydrocarbon group.

[0035] The specific saturated hydrocarbon group has one or more branches. By having a branch, the storage modulus of a cured product of an epoxy resin composition containing epoxy compound A can be effectively reduced, and the epoxy resin composition before curing can be made liquid. The number of branches that the specific saturated hydrocarbon group has is not particularly limited and may be, for example, 1 to 10, 1 to 5, or 2.

[0036] The number of carbon atoms per branch is preferably 3 to 15, more preferably 5 to 12, and even more preferably 6 to 10. When the specific saturated hydrocarbon group has two or more branches, the number of carbon atoms in the two or more branches may be the same or different. The branched monovalent hydrocarbon group may or may not be further branched, and is preferably unbranched.

[0037] The specific saturated hydrocarbon group preferably contains a ring structure, which can effectively reduce the storage modulus of the cured product of the epoxy resin composition.

[0038] Examples of the ring structure contained in the specific saturated hydrocarbon group include a cyclohexane structure, a decahydronaphthalene structure, a cyclopropane structure, a cyclobutane structure, a cyclopentane structure, a cycloheptane structure, a cyclooctane structure, a tetrahydrodicyclopentadiene structure, an adamantane structure, a norbornane structure, a bicyclo[2.2.2]octane structure, etc. Among these, the cyclohexane structure and the decahydronaphthalene structure are preferred, and the cyclohexane structure is more preferred.

[0039] The specific saturated hydrocarbon group preferably contains one to three ring structures, more preferably one or two ring structures, and even more preferably one ring structure. When the specific saturated hydrocarbon group contains two or more ring structures, the two or more ring structures may be the same or different.

[0040] When the specific saturated hydrocarbon group contains a ring structure, it is preferable that at least one of the branches of the specific saturated hydrocarbon group is bonded to the ring structure. The number of branches attached to one ring structure is preferably one or two, and more preferably two.

[0041] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the number of carbon atoms in the shortest path between the terminals of the specific saturated hydrocarbon group is preferably 10 to 30, more preferably 12 to 25, and even more preferably 15 to 20. In the present disclosure, the shortest path between the terminals of a specific saturated hydrocarbon group refers to the path that has the smallest number of carbon atoms among the paths connecting the carbon atoms at both terminals of the specific saturated hydrocarbon group. The number of carbon atoms in the shortest path between the terminals of the specific saturated hydrocarbon group includes the number of carbon atoms (2) located at both terminals.

[0042] The specific saturated hydrocarbon group may be represented by the following general formula (1).

[0043] [ka]

[0044] In general formula (1), R 1 and R 3 each independently represents a chain alkylene group having 5 to 20 carbon atoms which may be branched, and R 2 represents an optionally branched cyclic alkylene group having 4 to 20 carbon atoms, and * represents the bonding site to the adjacent atom.

[0045] The specific saturated hydrocarbon group may be represented by the following general formula (2).

[0046] [ka]

[0047] In general formula (2), R 4 each independently represents an alkyl group having 3 to 15 carbon atoms, each n independently represents an integer of 5 to 20, m represents an integer of 0 to 2, and * represents a bonding site to the adjacent atom.

[0048] The specific saturated hydrocarbon group may be one represented by the following general formula (2').

[0049] [ka]

[0050] In the general formula (2'), n's each independently represent an integer of 6 to 8, and * represents a bonding site to the adjacent atom.

[0051] The number of epoxy groups that the epoxy compound A has may be two or more.

[0052] The epoxy compound A may be a reaction product of a compound A1 having a specific saturated hydrocarbon group and a functional group capable of reacting with two or more epoxy groups, and a compound A2 having two or more epoxy groups.

[0053] Examples of the functional group capable of reacting with the epoxy group contained in compound A1 include a carboxy group, an amino group, and a hydroxyl group, with a carboxy group being preferred. The number of functional groups capable of reacting with an epoxy group that compound A1 has is preferably 2 to 4, more preferably 2 or 3, and even more preferably 2.

[0054] Compound A1 having two carboxy groups as functional groups capable of reacting with an epoxy group includes a hydrogenated product of a dimer acid. In the present disclosure, the term "dimer acid" refers to a dicarboxylic acid compound obtained by dimerizing an unsaturated fatty acid having 10 or more carbon atoms. In the present disclosure, the term "hydrogenated dimer acid" refers to a product in which the unsaturated double bonds contained in the unsaturated fatty acid that constitutes the dimer acid are converted into single bonds by the addition of hydrogen.

[0055] Specific examples of unsaturated fatty acids that can be used as raw materials for dimer acids include unsaturated fatty acids with 18 carbon atoms, such as oleic acid, linoleic acid, and linolenic acid; unsaturated fatty acids with 20 carbon atoms, such as eicosenoic acid and eicosadienoic acid; and unsaturated fatty acids with 22 carbon atoms, such as erucic acid.

[0056] The hydrogenated product of the dimer acid may or may not contain a ring structure. From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the hydrogenated product of the dimer acid preferably contains a ring structure, more preferably contains a cyclohexane structure or a decahydronaphthalene structure, and further preferably contains a cyclohexane structure.

[0057] As the compound A2 having two or more epoxy groups, a known epoxy resin can be used, and can be selected depending on the desired physical properties of the epoxy resin composition, etc. The epoxy resin may be used alone or in combination of two or more types.

[0058] Specific examples of epoxy resins include novolac-type epoxy resins such as phenol novolac-type epoxy resins and cresol novolac-type epoxy resins; bisphenol-type epoxy resins such as bisphenol A-type epoxy resins and bisphenol F-type epoxy resins; aromatic glycidylamine-type epoxy resins such as N,N-diglycidylaniline, N,N-diglycidyltoluidine, diaminodiphenylmethane-type glycidylamine, and aminophenol-type glycidylamine; aralkyl-type epoxy resins such as phenol aralkyl-type epoxy resins having at least one of a phenylene skeleton or a biphenylene skeleton, and naphthol aralkyl-type epoxy resins having at least one of a phenylene skeleton or a biphenylene skeleton; and hydroquinone-type epoxy resins. resins, biphenyl-type epoxy resins, stilbene-type epoxy resins, triphenolmethane-type epoxy resins, triphenolpropane-type epoxy resins, alkyl-modified triphenolmethane-type epoxy resins, triazine nucleus-containing epoxy resins, dicyclopentadiene-modified phenol-type epoxy resins, naphthol-type epoxy resins, naphthalene-type epoxy resins, alicyclic epoxy resins such as vinylcyclohexene dioxide, dicyclopentadiene oxide, and alicyclic diepoxy adipide; and bifunctional aliphatic epoxy compounds having two epoxy groups in the molecule, such as alkylene glycol diglycidyl ether, poly(alkylene glycol) diglycidyl ether, and alkenylene glycol diglycidyl ether.

[0059] Among the above epoxy resins, bisphenol-type epoxy resins, aromatic glycidylamine-type epoxy resins, and naphthalene-type epoxy resins are preferred, and bisphenol F-type epoxy resins and aminophenol-type glycidylamine are more preferred.

[0060] When epoxy compound A is a reaction product of compound A1 and compound A2, the epoxy compound preferably has one to three structures derived from compound A1, and preferably has two to four structures derived from compound A2. When the number of structures derived from compound A1 and the number of structures derived from compound A2 contained in epoxy compound A are each two or more, the respective structures may be the same or different.

[0061] When a bisphenol F type epoxy resin is used as compound A2, the structure derived from compound A2 is a diphenylmethane structure; when a bisphenol A type epoxy resin is used as compound A2, the structure derived from compound A2 is a 2,2'-diphenylpropane structure; and when an aminophenol type glycidylamine is used as compound A2, the structure derived from compound A2 is an aminophenyl structure.

[0062] When epoxy compound A is a reaction product of compound A1 and compound A2, the reaction ratio of compound A1 to compound A2 is not particularly limited. For example, compound A1 and compound A2 may be reacted so that the ratio (A1':A2') of the total number A1' of active hydrogens in the functional groups of compound A1 to the total number A2' of epoxy groups of compound A2 is 1:1 to 1:200. The reaction may be carried out so that a portion of compound A1 or compound A2 remains unreacted.

[0063] When the epoxy compound A is a reaction product of the compound A1 and the compound A2, the epoxy resin may contain the epoxy compound A and either or both of the unreacted compound A1 and the compound A2.

[0064] (Epoxy compound B) Epoxy compound B has, in its molecule, two or more epoxy groups, a siloxane bond, and an alkylene group having 8 to 20 carbon atoms bonded to the silicon atom that constitutes the siloxane bond. Hereinafter, the alkylene group having 8 to 20 carbon atoms bonded to the silicon atom that constitutes the siloxane bond will also be referred to as a "specific alkylene group."

[0065] When epoxy compound B has a siloxane bond and a specific alkylene group bonded to a silicon atom constituting the siloxane bond, the storage modulus of a cured product of an epoxy resin composition containing epoxy compound B can be effectively reduced, and the epoxy resin composition before curing can be made liquid. The number of specific alkylene groups that the epoxy compound B has in one molecule is not particularly limited and may be, for example, 1 to 5, 1 to 3, or 2.

[0066] The specific alkylene group may be linear, branched, or cyclic, but is preferably linear from the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition.

[0067] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the specific alkylene group preferably has 9 or more carbon atoms, and more preferably 10 or more carbon atoms. From the viewpoint of ensuring the strength of the cured product of the epoxy resin composition, the specific alkylene group preferably has 25 or less carbon atoms, more preferably 20 or less carbon atoms, and even more preferably 15 or less carbon atoms.

[0068] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the epoxy compound B preferably has a structure represented by the following general formula (3).

[0069] [ka]

[0070] In the above general formula (3), R5 and R 6 and each independently represent an alkylene group having 8 to 20 carbon atoms. From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the alkylene group preferably has 9 or more carbon atoms, and more preferably 10 or more carbon atoms. From the viewpoint of ensuring the strength of the cured product of the epoxy resin composition, the alkylene group preferably has 25 or less carbon atoms, more preferably 20 or less, and even more preferably 15 or less carbon atoms. From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the alkylene group is preferably linear. In the above general formula (3), R 7 ~R 12 are each independently hydrogen or an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 3 carbon atoms, and more preferably an alkyl group having 1 or 2 carbon atoms. In the above general formula (3), n represents an integer of 3 to 20, preferably an integer of 5 to 18, and more preferably an integer of 7 to 16. In the above general formula (3), * indicates a bonding site with an adjacent atom.

[0071] Epoxy compound B may be a reaction product of compound B1 having a functional group reactive with two or more epoxy groups, a siloxane bond, and an alkylene group having 8 to 20 carbon atoms bonded to a silicon atom constituting the siloxane bond, and compound B2 having two or more epoxy groups.

[0072] Examples of the functional group capable of reacting with the epoxy group contained in the compound B1 include a carboxy group, an amino group, and a hydroxyl group, with a carboxy group being preferred. The number of functional groups capable of reacting with an epoxy group that compound B1 has is preferably 2 to 4, more preferably 2 or 3, and even more preferably 2.

[0073] From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the compound B1 preferably has a structure represented by the following general formula (4).

[0074] [ka]

[0075] In the above general formula (4), R 13 and R 14 and each independently represent an alkylene group having 8 to 20 carbon atoms. From the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the alkylene group preferably has 9 or more carbon atoms, and more preferably 10 or more carbon atoms. Furthermore, from the viewpoint of ensuring the strength of the cured product of the epoxy resin composition, the alkylene group preferably has 25 or less carbon atoms, more preferably 20 or less, and even more preferably 15 or less carbon atoms. In addition, from the viewpoint of reducing the storage modulus of the cured product of the epoxy resin composition, the alkylene group is preferably linear. In the above general formula (4), R 15 ~R 20 are each independently hydrogen or an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 3 carbon atoms, and more preferably an alkyl group having 1 or 2 carbon atoms. In the above general formula (4), Z represents a carboxy group, an amino group, or a hydroxyl group, and is preferably a carboxy group. In the above general formula (4), n represents an integer of 3 to 20, preferably an integer of 5 to 18, and more preferably an integer of 7 to 16.

[0076] Compound B2 can be the same as compound A2 described above.

[0077] When epoxy compound B is a reaction product of compound B1 and compound B2, epoxy compound B preferably has one to three structures derived from compound B1, and preferably has two to four structures derived from compound B2. When the number of structures derived from compound B1 and the number of structures derived from compound B2 contained in epoxy compound B are each two or more, the respective structures may be the same or different.

[0078] When epoxy compound B is a reaction product of compound B1 and compound B2, the reaction ratio of compound B1 to compound B2 is not particularly limited. For example, compound B1 and compound B2 may be reacted in such a manner that the ratio (B1':B2') of the total number of active hydrogens in the functional groups of compound B1 to the total number of epoxy groups in compound B2 is 1:1 to 1:200. The reaction may be carried out so that a portion of compound B1 or compound B2 remains unreacted.

[0079] When epoxy compound B is a reaction product of compound B1 and compound B2, the epoxy resin may contain epoxy compound B and either or both of unreacted compound B1 and compound B2.

[0080] (hardening agent) The epoxy resin composition may include a curing agent. The type of curing agent is not particularly limited and can be selected from those commonly used as materials for epoxy resin compositions. One type of curing agent may be used alone, or two or more types may be used in combination.

[0081] From the viewpoint of obtaining an epoxy resin composition that is liquid at room temperature, the curing agent is preferably an amine-based curing agent. The amine-based curing agent is preferably a compound containing two or more types of one or more selected from the group consisting of primary amino groups and secondary amino groups (hereinafter simply referred to as "amino groups") in one molecule, more preferably a compound having two to four amino groups in one molecule, and even more preferably a compound having two amino groups in one molecule (diamine compound).

[0082] The compound having an amino group is preferably a compound having an aromatic ring (aromatic amine compound), more preferably an aromatic amine compound that is liquid at room temperature, and even more preferably an aromatic amine compound that is liquid at room temperature and has two amino groups in one molecule.

[0083] Examples of aromatic amine compounds that are liquid at room temperature include diethyltoluenediamines such as 3,5-diethyltoluene-2,4-diamine and 3,5-diethyltoluene-2,6-diamine, triethyldiaminobenzenes such as 1,3,5-triethyl-2,6-diaminobenzene, and diaminodiphenylmethanes such as 3,3'-diethyl-4,4'-diaminodiphenylmethane and 3,5,3',5'-tetramethyl-4,4'-diaminodiphenylmethane.

[0084] Among the above compounds, diaminodiphenylmethane and diethyltoluenediamine are preferred from the viewpoint of storage stability. When at least one of diaminodiphenylmethane and diethyltoluenediamine is used as the curing agent, the total content thereof relative to the total mass of the curing agents contained in the epoxy resin composition is preferably 50 mass% or more, more preferably 70 mass% or more, and even more preferably 80 mass% or more.

[0085] When an aromatic amine compound that is liquid at room temperature is used as the amine curing agent, the content of the curing agent in the epoxy resin composition relative to the total mass of the curing agent is preferably 50% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more, from the viewpoint of fully exhibiting its performance.

[0086] When an aromatic amine compound is used as the amine curing agent, the active hydrogen equivalent of the amine curing agent is not particularly limited. From the viewpoint of further suppressing the occurrence of bleeding, the active hydrogen equivalent is, for example, preferably 10 g / mol to 200 g / mol, more preferably 20 g / mol to 100 g / mol, and even more preferably 30 g / mol to 70 g / mol.

[0087] The active hydrogen equivalent of the amine curing agent refers to a value calculated based on the amine value measured in accordance with JIS K7237:1995.

[0088] The equivalent ratio of the epoxy resin to the amine curing agent in the epoxy resin composition (molar number of epoxy groups in the epoxy resin / molar number of active hydrogens in the amine curing agent) is not particularly limited. From the viewpoint of minimizing unreacted amounts of each, the mole ratio of the epoxy groups in the epoxy resin to the mole ratio of the active hydrogens in the amine curing agent is, for example, preferably 0.7 to 1.6, more preferably 0.8 to 1.4, and even more preferably 0.9 to 1.2.

[0089] The epoxy resin composition may contain a curing agent other than an amine-based curing agent, such as a phenol-based curing agent or an acid anhydride-based curing agent. Examples of phenolic curing agents include monofunctional compounds such as phenol, o-cresol, m-cresol, and p-cresol; bifunctional compounds such as catechol, resorcinol, and hydroquinone; and trifunctional compounds such as 1,2,3-trihydroxybenzene, 1,2,4-trihydroxybenzene, and 1,3,5-trihydroxybenzene. As the phenolic curing agent, a phenolic novolac resin obtained by linking these phenolic curing agents with a methylene chain or the like to form a novolac may be used. Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bisanhydrotrimellitate.

[0090] (Other ingredients) The epoxy resin composition may contain, as necessary, an inorganic filler, a curing accelerator, a coupling agent, an ion trapping agent, an antioxidant, an organic solvent, a release agent, a colorant, rubber particles, a leveling agent, an antifoaming agent, and the like.

[0091] (curing accelerator) The type of curing accelerator is not particularly limited. Examples of the curing accelerator include cycloamidine compounds such as 1,8-diaza-bicyclo[5.4.0]undecene-7, 1,5-diaza-bicyclo[4.3.0]nonene, and 5,6-dibutylamino-1,8-diaza-bicyclo[5.4.0]undecene-7; cycloamidine compounds with maleic anhydride, 1,4-benzoquinone, 2,5-toluquinone, 1,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, and 2,3-dimethoxy-5-methyl-1,4-benzylquinone; Compounds with intramolecular polarization formed by adding compounds with π bonds such as quinone compounds such as benzoquinone, 2,3-dimethoxy-1,4-benzoquinone, and phenyl-1,4-benzoquinone, diazophenylmethane, and phenolic resins; tertiary amine compounds such as benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; derivatives of tertiary amine compounds; 2-methylimidazole, 2-phenylimidazole, and 2-phenyl-4 Examples of the curing accelerator include imidazole compounds such as 4-methylimidazole; derivatives of imidazole compounds; organic phosphine compounds such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris(4-methylphenyl)phosphine, diphenylphosphine, and phenylphosphine; phosphorus compounds having intramolecular polarization obtained by adding a compound having a π bond, such as maleic anhydride, the above-mentioned quinone compounds, diazophenylmethane, or a phenolic resin, to an organic phosphine compound; tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl-4-methylimidazole tetraphenylborate, and N-methylmorpholine tetraphenylborate; derivatives of tetraphenylboron salts; and adducts of phosphine compounds and tetraphenylboron salts, such as triphenylphosphonium-triphenylborane and N-methylmorpholine tetraphenylphosphonium-tetraphenylborate. One type of curing accelerator may be used alone, or two or more types may be used in combination.

[0092] When the epoxy resin composition contains a curing accelerator, the content of the curing accelerator is preferably 0.1% by mass to 8% by mass relative to the content of the resin component (total of the epoxy resin and the curing agent).

[0093] (inorganic filler) The type of inorganic filler is not particularly limited. Examples of inorganic fillers include silica such as fused silica and crystalline silica, calcium carbonate, alumina, silicon nitride, silicon carbide, boron nitride, calcium silicate, potassium titanate, aluminum nitride, beryllia, zirconia, zircon, fosterite, steatite, spinel, mullite, and titania powders, as well as spherical beads and glass fibers made from these. Furthermore, examples of inorganic fillers with flame retardant properties include aluminum hydroxide, magnesium hydroxide, zinc borate, and zinc molybdate. The inorganic fillers may be used alone or in combination of two or more.

[0094] The particle shape of the inorganic filler is not particularly limited and may be amorphous or spherical, but from the viewpoint of fluidity and permeability, spherical is preferred. From the same viewpoint, for example, spherical silica is preferred as the inorganic filler, and spherical fused silica is more preferred.

[0095] The volume average particle size of the inorganic filler is not particularly limited. For example, it is preferably 0.1 μm to 10 μm, and more preferably 0.3 μm to 5 μm. When the volume average particle size of the inorganic filler is 0.1 μm or more, dispersibility in the epoxy resin composition is improved, and flow properties tend to be improved. When it is 10 μm or less, sedimentation of the inorganic filler is suppressed, and the permeability and flowability of the epoxy resin composition tend to be improved.

[0096] In the present disclosure, the volume average particle diameter of the inorganic filler is the particle diameter (D50%) at which the cumulative total from the small diameter side reaches 50% in a volume-based particle size distribution obtained using a laser diffraction particle size distribution analyzer.

[0097] The content of the inorganic filler is not particularly limited. When the epoxy resin composition of the present disclosure contains an inorganic filler, the content of the inorganic filler relative to the total mass of the epoxy resin composition is preferably 20% by mass to 90% by mass, more preferably 30% by mass to 80% by mass, even more preferably 40% by mass to 75% by mass, particularly preferably 50% by mass to 75% by mass, and particularly preferably 60% by mass to 75% by mass. When the content of the inorganic filler is 20% by mass or more, the thermal expansion coefficient tends to decrease, and when it is 90% by mass or less, the viscosity of the epoxy resin composition tends to decrease, and the flowability, penetration, and dispensability tend to improve.

[0098] (coupling agent) The type of coupling agent is not particularly limited. Examples of coupling agents include silane-based compounds such as aminosilanes having one or more types selected from the group consisting of primary amino groups, secondary amino groups, and tertiary amino groups, epoxysilanes, mercaptosilanes, alkylsilanes, ureidosilanes, and vinylsilanes, titanium-based compounds, aluminum chelates, and aluminum / zirconium-based compounds. Among these, silane-based compounds are preferred, and epoxysilanes are more preferred, from the viewpoint of filling properties.

[0099] Examples of epoxy silanes include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldimethoxysilane. Among these, γ-glycidoxypropylmethyldimethoxysilane is preferred from the viewpoint of filling properties. The coupling agents may be used alone or in combination of two or more.

[0100] When the epoxy resin composition contains a coupling agent, its content is not particularly limited. From the viewpoint of strengthening the interfacial adhesion between the resin component and the inorganic filler and between the resin component and the constituent members of the electronic component, and from the viewpoint of improving the filling property, for example, the content of the coupling agent relative to the total mass of the epoxy resin composition is preferably 0.05 to 10 mass%, more preferably 0.2 to 5 mass%, and even more preferably 0.4 to 1 mass%.

[0101] <Electronic component equipment> The electronic component device of the present disclosure includes the above-described semiconductor chip stack.

[0102] Specific examples of electronic component devices include electronic component devices obtained by mounting electronic components such as active elements such as semiconductor elements, transistors, diodes, and thyristors, and passive elements such as capacitors, resistors, resistor arrays, coils, and switches on a substrate having a circuit layer, such as a lead frame, a pre-wired tape carrier, a rigid wiring board, a flexible wiring board, glass, or a silicon wafer, and then sealing the necessary parts with the sealing material of the present disclosure. In particular, the encapsulant of the present disclosure can be applied to electronic component devices in which semiconductor elements are flip-chip bonded to wiring formed on a rigid wiring board, a flexible wiring board, or glass by bump connection. Specific examples include flip-chip BGA (Ball Grid Array), LGA (Land Grid Array), COF (Chip On Film), and other electronic component devices. The electronic component device may have a 3D structure called a system on integrated chip (SoIC) or chip-on-wafer-on-substrate (CoWoS).

[0103] There are no particular limitations on the location in an electronic component device to which the semiconductor chip stack of the present disclosure is applied. For example, the semiconductor chip stack of the present disclosure may be applied to elements such as memory and logic.

[0104] <Method of manufacturing semiconductor chip stack> A first embodiment of a method for manufacturing a semiconductor chip according to the present disclosure includes preparing a plurality of semiconductor chips each having an electrode on at least one surface thereof; forming a resin layer on the surfaces of the plurality of semiconductor chips having the electrodes; and placing the surfaces of the semiconductor chips on which the resin layer is formed face each other.

[0105] A second embodiment of the method for manufacturing a semiconductor chip according to the present disclosure includes the steps of: preparing a plurality of semiconductor chips each having an electrode on at least one surface; placing the surfaces of the plurality of semiconductor chips having the electrodes facing each other; and filling the gaps between the facing semiconductor chips with resin.

[0106] According to the above method, it is possible to manufacture a structure in which an insulating layer containing a resin is formed between a plurality of semiconductor chips. The details and preferred embodiments of the semiconductor chips and resin used in the above method are the same as the details and preferred embodiments of the semiconductor chips and resin used in the semiconductor chip stacked body described above.

[0107] As an example of the first embodiment, a method employing a hybrid bonding technique will be described with reference to the drawings.

[0108] 1(A) is a cross-sectional view that schematically shows a semiconductor wafer 10 that will become a semiconductor chip. The semiconductor wafer 10 has an electrode 1 and an insulating layer 2 that is formed so as to cover the electrode 1.

[0109] As shown in FIG. 1(B), the surface of the semiconductor wafer 10 having the electrodes 1 is flattened by CMP (Chemical Mechanical Polishing) and the tops of the electrodes 1 are exposed.

[0110] 1(C), a protective layer 3 is formed on the polished insulating layer 2. In this state, the semiconductor wafer 10 is divided into individual pieces, and the protective layer 3 is removed to obtain semiconductor chips.

[0111] 1(D), the surface of the semiconductor chip 101 on which the electrodes 1 and the insulating layer 2 are formed is opposed to the surfaces of the separately fabricated semiconductor chips 102 and 103 on which the electrodes 1 and the insulating layer 2 are formed. In this state, heating is applied while pressure is applied to bond the opposing electrodes to each other.

[0112] Next, as shown in FIG. 1(E), the peripheries of the semiconductor chips 101, 102, and 103 are sealed with resin 4 to obtain semiconductor chip stack 100.

[0113] As an example of the second embodiment, a method employing underfill technology will be described with reference to the drawings.

[0114] Semiconductor chips 201, 202, and 203 shown in FIG. 2(A) each have an electrode 1, and are arranged so that the surfaces having the electrode 1 face each other.

[0115] 2(B), the space between the electrodes 1 is filled with an underfill material to form an insulating layer 2 and bond the opposing electrodes together. The underfill material is a liquid material used to form the insulating layer 2.

[0116] Next, as shown in FIG. 2(C), the peripheries of the semiconductor chips 201, 202, and 203 are sealed with resin 4, thereby obtaining a semiconductor chip stack 200.

[0117] In the method shown in FIGS. 1 and 2, an insulating layer is formed between two layers of semiconductor chips, but an insulating layer can also be formed between three or more layers of semiconductor chips in a similar manner. [Example]

[0118] The present disclosure will be described below based on examples, but the present disclosure is not limited to the following examples.

[0119] [Preparation of Epoxy Resin Composition] The components shown in Table 1 were blended in the amounts (parts by mass) shown in Table 1, and then kneaded and dispersed using a triple roll mill and a vacuum crusher to prepare sealing materials for Examples and Comparative Examples. Details of each material shown in Table 1 are as follows. Blanks (-) in Table 1 indicate that the material was not blended.

[0120] Epoxy resin 1: A liquid bifunctional epoxy resin with an epoxy equivalent of 160 g / mol obtained by epoxidizing bisphenol F Epoxy resin 2: A liquid trifunctional epoxy resin with an epoxy equivalent of 95 g / mol obtained by epoxidizing p-aminophenol

[0121] Epoxy resin 3: an epoxy resin containing a reaction product of epoxy resin 1 (100 parts by mass) and a dicarboxylic acid compound (30 parts by mass) represented by the following general formula (5): Epoxy resin 4: an epoxy resin containing a reaction product of epoxy resin 2 (100 parts by mass) and a dicarboxylic acid compound (30 parts by mass) represented by the following general formula (5):

[0122] [ka]

[0123] In the general formula (5), n's each independently represent an integer of 6 to 8.

[0124] Epoxy resin 5: an epoxy resin containing a reaction product of epoxy resin 1 (100 parts by mass) and a silicone compound having the following structure (30 parts by mass, where n is 14 to 15): [ka]

[0125] Epoxy resin 3 and epoxy resin 4 were synthesized as follows. A mixture of epoxy resin and dicarboxylic acid compound was heated to a reaction temperature (100-120°C) in a nitrogen atmosphere in the presence of TPP (triphenylphosphine) as a curing accelerator. The mixture was maintained at the reaction temperature for 8 hours while monitoring the reaction between the epoxy resin and dicarboxylic acid compound using gel permeation chromatography (GPC) and infrared spectroscopy (IR). The mixture was then cooled to room temperature to obtain Epoxy Resin 3 and Epoxy Resin 4, which contain reaction products of the epoxy resin and dicarboxylic acid compound.

[0126] Epoxy resin 5 was synthesized as follows. A mixture of epoxy resin and silicone compound was heated to a reaction temperature (100-120°C) in a nitrogen atmosphere in the presence of TPP as a curing accelerator. The mixture was maintained at the reaction temperature for 8 hours while monitoring the reaction between the epoxy resin and silicone compound using gel permeation chromatography (GPC) and infrared spectroscopy (IR). The mixture was then cooled to room temperature to obtain Epoxy Resin 5, a reaction product of the epoxy resin and silicone compound.

[0127] Curing agent 1: 2,6-diethyltoluene-3,5-diamine with an active hydrogen equivalent of 45 g / mol Hardener 2: 3,3'-diethyl-4,4'-diaminodiphenylmethane with an active hydrogen equivalent of 63 g / mol

[0128] [Storage modulus measurement] The epoxy resin compositions prepared in the examples and comparative examples were cured at 165°C for 120 minutes to obtain cured products. Samples measuring 30 mm x 5 mm x 2 mm were prepared from the resulting cured products, and the storage modulus of the samples was measured using a dynamic viscoelasticity measuring device (Rpheogel-E400, UBM Corporation). Measurements were performed using a tensile test with a chuck distance of 20 mm, a frequency of 1 Hz, and a heating rate of 5°C / min from 20°C to 250°C. The storage modulus (GPa) at 25°C and 240°C was measured. The results are shown in Table 1.

[0129] [Measurement of coefficient of thermal expansion (CTE)] The epoxy resin composition was cured at 150°C for 2 hours to prepare a test specimen measuring 8 mm in diameter and 20 mm in thickness. The thermal expansion coefficient of this test specimen was measured using a thermomechanical analyzer (trade name: TMA2940, TA Instruments) by the compression method, while the temperature was raised from 0°C to 300°C at a rate of 5°C / min. The slope of the tangent line obtained by the measurement at 50°C was designated CTE1 (ppm / °C), and the slope of the tangent line at 150°C was designated CTE2 (ppm / °C). The results are shown in Table 1.

[0130] [Measurement of glass transition temperature] In the above measurement of the thermal expansion coefficient, the glass transition temperature (°C) was determined as the temperature corresponding to the intersection of the tangent line at 50°C and the tangent line at 150°C. The results are shown in Table 1.

[0131] [Viscosity measurement] The viscosities of the epoxy resin compositions prepared in the Examples and Comparative Examples at 25°C and 110°C were measured by the above-mentioned method using an EHD type rotational viscometer equipped with a cone rotor with a cone angle of 3° and a cone radius of 14 mm. The results are shown in Table 1. In addition, the thixotropy index [(viscosity at 2.5 rpm) / (viscosity at 10 rpm)], which is the ratio of the viscosity measured at 25°C using an E-type viscometer at a rotation speed of 2.5 rpm to the viscosity measured at a rotation speed of 10 rpm, was determined and is shown in Table 1.

[0132] [Table 1]

[0133] As shown in Table 1, the epoxy resin compositions of the Examples containing at least one of epoxy compound A and epoxy compound B have lower storage moduli of the cured products than the epoxy resin compositions of the Comparative Examples which do not contain epoxy compound A or epoxy compound B.

Claims

1. a plurality of semiconductor chips; electrodes electrically connecting the plurality of semiconductor chips; and an insulating layer disposed between the plurality of semiconductor chips; The insulating layer is a cured product of a composition containing an epoxy resin, and the epoxy resin contains an epoxy compound A having one or more epoxy groups and a divalent saturated hydrocarbon group having one or more branches and having 20 to 60 carbon atoms.

2. 2. The semiconductor chip stack according to claim 1, wherein the distance between the plurality of semiconductor chips is 50 [mu]m or less.

3. A semiconductor chip laminate as described in claim 1, wherein the saturated hydrocarbon group is represented by the following general formula (1): In general formula (1), R 1 and R 3 each independently represent a chain alkylene group having 5 to 20 carbon atoms which may be branched, R 2 represents a cyclic alkylene group having 4 to 20 carbon atoms which may be branched, and * represents a bonding site to an adjacent atom.

4. 2. The semiconductor chip stack according to claim 1, wherein the epoxy resin further comprises an epoxy compound B having two or more epoxy groups, a siloxane bond, and an alkylene group having 8 to 20 carbon atoms bonded to a silicon atom constituting the siloxane bond.

5. An electronic component device comprising the semiconductor chip stack according to any one of claims 1 to 4.

6. 6. The electronic component device according to claim 5, further comprising at least one selected from the group consisting of a memory and a logic including the semiconductor chip stack.

7. preparing a plurality of semiconductor chips each having an electrode on at least one surface; forming a resin layer on the surfaces of the plurality of semiconductor chips having the electrodes; and placing the surfaces of the semiconductor chips on which the resin layer is formed face each other, The resin layer contains an epoxy resin, and the epoxy resin contains an epoxy compound A having one or more epoxy groups and one or more branches and a divalent saturated hydrocarbon group having 20 to 60 carbon atoms.

8. preparing a plurality of semiconductor chips each having an electrode on at least one surface; placing the surfaces of the plurality of semiconductor chips having the electrodes facing each other; and filling gaps between the plurality of semiconductor chips with resin, The resin includes an epoxy resin, and the epoxy resin has one or more epoxy groups and one or more branches and a divalent saturated hydrocarbon group having 20 to 60 carbon atoms.

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