Electrostatic Chuck Device

Abstract

To provide an electrostatic chuck device having convex portions with excellent plasma resistance and high adhesion.SOLUTION: The electrostatic chuck device includes a base 11, a first adhesive layer 110, a first insulating organic film 120, an electrode 12, a second adhesive layer 130, a second insulating organic film 210, and a plurality of convex portions 14 on an attraction surface. The convex portions 14 have a ceramic layer 15 containing a ceramic film 16 and a resin binder. The ceramic film 16 contains ceramic particles 21 and a metal oxide 22. At least a portion of the ceramic particles 21 are bonded to each other via the metal oxide 22.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an electrostatic chuck device. [Background technology]

[0002] When manufacturing semiconductor integrated circuits using semiconductor wafers or liquid crystal panels using insulating substrates such as glass substrates or films, it is necessary to adsorb and hold substrates such as semiconductor wafers, glass substrates, and insulating substrates at predetermined locations. To adsorb and hold these substrates, mechanical chucks and vacuum chucks have been used. However, these holding methods have problems such as difficulty in uniformly holding the substrate (object to be adsorbed), inability to be used in a vacuum, and excessive temperature rise of the substrate surface. Therefore, in recent years, electrostatic chuck devices that can solve these problems have been used to hold objects to be adsorbed.

[0003] The electrostatic chuck device comprises, as its main components, a conductive support member that serves as an internal electrode and a dielectric layer made of a dielectric material covering the support member. This main component is capable of attracting an object to be attracted. When a voltage is applied to the internal electrode within the electrostatic chuck device, creating a potential difference between the object to be attracted and the conductive support member (internal electrode), an electrostatic attraction force is generated in the dielectric layer. This allows the object to be supported in a substantially flat manner relative to the conductive support member. Furthermore, by forming multiple uneven portions on the attracting surface of the electrostatic chuck device and attracting the object to the surface formed by the upper surfaces of these multiple uneven portions, particles are prevented from adhering to the object to be attracted when fine unevenness is formed on the attracting surface of the dielectric layer by thermal spraying.

[0004] It is known that a dimple process is performed by thinly scraping away portions of the surface of a ceramic dielectric layer that serves as the adsorption surface, forming numerous irregularities (see, for example, Patent Document 1). In Patent Document 1, an 8 mm wide outer periphery of the surface and multiple regularly arranged 4 mm diameter circular sections are masked, and the remaining section is subjected to a blasting process, scraping away a depth of 20 μm to create steps, thereby preventing particles from adhering to the adsorption surface when the ceramic is thermally sprayed.

[0005] The larger the contact area between the silicon wafer and the electrostatic chuck device, the more particles there are on the backside of the silicon wafer. Therefore, in order to reduce the contact area between the silicon wafer and the electrostatic chuck device, it is known to form multiple uneven portions on the attracting surface of the electrostatic chuck device (see, for example, Patent Document 2). In Patent Document 2, the attracting surface is masked with a predetermined pattern, and then blasted to form the multiple uneven portions.

[0006] It is also known to mask the surface of the member to be treated (subject to adsorption) with a masking material having openings of a predetermined pattern shape, and then spray a thermal spray material through the masking material to pattern the thermal sprayed film (see, for example, Patent Document 3). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-264223 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-201068 [Patent Document 3] Japanese Patent Application Publication No. 2017-177029 Summary of the Invention [Problem to be solved by the invention]

[0008] As described in Patent Documents 1 to 3, when a thermal sprayed film having fine irregularities is formed on the attracting surface of an electrostatic chuck device by thermal spraying, the following problems arise. The ceramic particles that can be used for thermal spraying are limited to relatively large particles with an average primary particle diameter of several tens of micrometers or more. As a result, the unevenness formed by thermal spraying has many voids, which causes problems such as poor plasma resistance and poor adhesion to the base. When forming unevenness by thermal spraying, ceramic particles need to be layered multiple times, which presents the problem of taking a long time. Since the film thickness that can be created with one thermal spraying is 2 to 3 μm, it takes about 20 thermal sprayings to form protrusions 30 μm high, which makes the work less efficient. Furthermore, since the surface of the sprayed film is polished after formation, it needs to be formed thicker than the desired thickness.

[0009] The present invention has been made in view of the above circumstances, and has an object to provide an electrostatic chuck device having a protrusion that is excellent in plasma resistance and has high adhesion. [Means for solving the problem]

[0010] The present invention has the following aspects. [1] An electrostatic chuck device having a plurality of protrusions on an attraction surface, wherein the protrusions have a ceramic film and a ceramic layer containing a resin binder, the ceramic film contains ceramic particles and a metal oxide, and at least some of the ceramic particles are bonded to each other via the metal oxide. [2] The electrostatic chuck device according to [1], wherein the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. [3] The electrostatic chuck device according to [1] or [2], characterized in that the average primary particle diameter of the ceramic particles is 0.1 μm or less and 50 μm or less. [4] The electrostatic chuck device according to any one of [1] to [3], wherein the metal oxide is a metal oxide obtained by heat-treating an organometallic compound to decompose and remove organic components and oxidize the metal constituting the organometallic compound. [5] The electrostatic chuck device according to [4], wherein the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium. [Effects of the Invention]

[0011] According to the present invention, it is possible to provide an electrostatic chuck device having a protrusion that is excellent in plasma resistance and has high adhesion. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. [Figure 2] 2 is a schematic cross-sectional view showing a convex portion constituting an electrostatic chuck device according to an embodiment of the present invention. FIG. [Figure 3] 1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. [Figure 4] 1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. [Figure 5] FIG. 2 is a schematic plan view showing a mask sheet for forming convex portions. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, an embodiment of an electrostatic chuck device according to the present invention will be described with reference to the drawings. Note that the drawings used in the following description show characteristic portions in an enlarged scale for convenience, and the dimensional ratios of the components may differ from the actual ones. Furthermore, the materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not limited thereto and may be appropriately changed within the scope of the present invention.

[0014] [Electrostatic chuck device] An electrostatic chuck device according to one embodiment of the present invention is an electrostatic chuck device having a plurality of protrusions on an attraction surface, wherein the protrusions have a ceramic film and a ceramic layer containing a resin binder, the ceramic film contains ceramic particles and a metal oxide, and the ceramic particles are at least partially bonded together via the metal oxide.

[0015] An electrostatic chuck device according to one embodiment of the present invention will be described with reference to FIGS. Fig. 1 is a schematic cross-sectional view showing an electrostatic chuck device according to this embodiment, and Fig. 2 is a schematic cross-sectional view showing a protrusion that constitutes the electrostatic chuck device according to this embodiment. 1 includes a base 11, an electrode 12, a ceramic layer 13, and a protrusion 14. The electrode 12 is formed on one surface (top surface) 11a of the base 11. The ceramic layer 13 is formed on the one surface 11a of the base 11 so as to cover the electrode 12, i.e., so as to cover one surface (top surface) 12a and a side surface 12b of the electrode 12. The protrusion 14 is formed on one surface (top surface) 13a of the ceramic layer 13. The protrusion 14 also includes a ceramic layer 15 and a ceramic film 16. The ceramic layer 15 is formed on one surface 13a of the ceramic layer 13, and the ceramic film 16 is formed so as to cover one surface (upper surface) 15a and a side surface 15b of the ceramic layer 15. One surface (upper surface, front surface) 16a of the protrusion 14 is the adsorption surface of the electrostatic chuck device 10.

[0016] <Base 11> The base 11 is not particularly limited, but examples thereof include a ceramic base, a silicon carbide base, and a metal base made of aluminum, stainless steel, or the like.

[0017] <Electrode 12> The electrode 12 is not particularly limited as long as it is made of a conductive material that can generate an electrostatic adsorption force when a voltage is applied. Suitable examples of the electrode 12 include thin films made of metals such as copper, aluminum, gold, silver, platinum, chromium, nickel, and tungsten, and thin films made of at least two metals selected from the group of metals mentioned above. Examples of such metal thin films include those formed by vapor deposition, plating, sputtering, and the like, and those formed by applying and drying a conductive paste. A specific example of the electrode 12 is a metal foil such as copper foil.

[0018] The electrode 12 may be a monopole consisting of a single layer, or a bipole divided into two or more parts. The electrode pattern and shape of the electrode 12 are not particularly limited. The arrangement of the electrode 12 can be designed as appropriate.

[0019] The thickness of the electrode 12 is not particularly limited. The thickness of the electrode 12 is preferably 1 μm or more and 100 μm or less, and more preferably 3 μm or more and 20 μm or less. If the thickness of the electrode 12 is equal to or more than the lower limit, unevenness is less likely to occur on one surface (upper surface) 12a of the electrode 12 when the ceramic layer 13 is formed to cover the electrode 12. If the thickness of the electrode 12 is equal to or less than the upper limit, sufficient bonding strength between the electrode 12 and other layers can be obtained.

[0020] <Ceramic layer 13> The ceramic layer 13 is made of a sintered ceramic body or a sprayed ceramic body. The material constituting the ceramic sintered body and the ceramic sprayed body is not particularly limited, and examples thereof include boron nitride, aluminum nitride, zirconium oxide, silicon oxide, tin oxide, indium oxide, quartz glass, soda glass, lead glass, borosilicate glass, zirconium nitride, titanium oxide, etc. These materials may be used alone or in combination of two or more.

[0021] The average primary particle size of the material constituting the ceramic sintered body and the ceramic spray-coated body is preferably 1 μm or more and 25 μm or less. When the average primary particle size of the material is within this range, the voids in the ceramic sintered body and the ceramic spray-coated body can be reduced, and the withstand voltage of the ceramic sintered body and the ceramic spray-coated body can be improved.

[0022] The average primary particle size of the materials that make up the ceramic sintered body and the ceramic sprayed body can be measured by a laser diffraction / scattering method or the like.

[0023] The thickness of the ceramic layer 13 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. If the thickness of the ceramic layer 13 is less than 5 μm, sufficient plasma resistance cannot be obtained. If the thickness of the ceramic layer 13 exceeds 200 μm, thermal conductivity decreases.

[0024] <Convex part 14> The ceramic layer 15 contains ceramic particles and a resin binder. As the ceramic particles constituting the ceramic layer 15, ceramic particles having the shapes and materials exemplified for the ceramic layer 13 can be used. Since the ceramic layer 15 is a resin layer containing ceramic particles and a resin binder, the resin binder provides high adhesion and makes it possible to obtain an electrostatic chuck device with high withstand voltage.

[0025] The average primary particle size of the ceramic particles constituting ceramic layer 15 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 10 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle size of the ceramic particles is within the above range, a film can be formed using small particle size particles, and the ceramic particles become denser, thereby providing an electrostatic chuck device with high adhesion and good thermal conductivity. The average primary particle size of the ceramic particles that make up the ceramic layer 15 can be measured by a laser diffraction / scattering method.

[0026] The resin binder in the ceramic layer 15 can be one or more resins selected from epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, polyacrylamide resins, acrylic resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like. The ceramic layer 15 can contain 100 parts by mass to 10,000 parts by mass, preferably 300 parts by mass to 4,000 parts by mass, and more preferably 500 parts by mass to 2,000 parts by mass of ceramic particles per 100 parts by mass of resin binder.

[0027] The thickness of the ceramic layer 15 is not particularly limited. The thickness of the ceramic layer 15 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. When the thickness of the ceramic layer 15 is equal to or more than the lower limit, insulation properties can be ensured. When the thickness of the ceramic layer 15 is equal to or less than the upper limit, sufficient adsorptive force is generated by the electrode 12.

[0028] The ceramic film 16 is composed of a ceramic composition including a plurality of ceramic particles 21 and a plurality of metal oxides 22. In the electrostatic chuck device 10 of this embodiment, at least some of the ceramic particles 21 are bonded to each other via the metal oxides 22. That is, as shown in FIG. 2 , one ceramic particle 21 (21A) included in the ceramic film 16 is bonded to another ceramic particle 21 via the metal oxide 22. Also, one ceramic particle 21 (21C) included in the ceramic film 16 is bonded to another ceramic particle 21 (21B) via the metal oxide 22 (22A). Also, one ceramic particle 21 (21B) included in the ceramic film 16 is bonded to another ceramic particle 21 via the metal oxide 22 (22B). One ceramic particle 21 may be in contact with one or more metal oxides 22 and may be bonded to one or more other ceramic particles 21 via the respective metal oxides 22. Also, the ceramic particle 21 may be in contact with other ceramic particles 21.

[0029] The thickness of the ceramic film 16 (height based on one surface 15a of the ceramic layer 15) is preferably 1 μm or more and 80 μm or less, and more preferably 5 μm or more and 50 μm or less. When the thickness of the ceramic film 16 is equal to or more than the lower limit, sufficient plasma resistance and voltage resistance are exhibited. When the thickness of the ceramic film 16 is equal to or less than the upper limit, sufficient adsorption force is generated.

[0030] The arithmetic mean roughness (Ra) of the surface (upper surface) 16a of the ceramic film 16 is preferably 0.05 μm or more and 0.5 μm or less. When the arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 is within this range, the adsorbate can be adsorbed well. If the arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 is large, the contact area between the adsorbate and the ceramic film 16 becomes small, and therefore the adsorption force also becomes small.

[0031] The arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 can be measured in accordance with the method specified in JIS B0601-1994.

[0032] The ratio of the content of ceramic particles 21 to the content of metal oxide 22 in ceramic film 16 is preferably 80:20 to 98:2, and more preferably 90:10 to 96:4, by mass, of ceramic particles 21:metal oxide 22. When the content ratio of ceramic particles 21 to metal oxide 22 is within the above range, the ceramic particles 21 can be well bonded together by metal oxide 22.

[0033] <Ceramic particles 21> The ceramic particles 21 are not particularly limited. Examples of the shape of the ceramic particles 21 include spherical, spherical, amorphous, needle-like, fibrous, and plate-like shapes. The ceramic particles 21 having these shapes may be used alone or in combination of two or more.

[0034] Examples of the material of the ceramic particles 21 include ceramic particles mainly composed of oxide ceramics, non-oxide ceramics, and composite ceramics thereof.

[0035] Examples of oxide ceramics include alumina (aluminum oxide, Al2O3), zirconia (zirconium oxide, ZrO2), yttria (yttrium oxide, Y2O3), and talc (hydrated magnesium silicate, Mg3SiO4). 10 (OH) 10 ), hematite (iron (III) oxide, Fe2O3), chromia (chromium (III) oxide, Cr2O3), titania (titanium (IV) oxide, Ti2O), magnesia (magnesium oxide, MgO), silica (silicon dioxide, SiO2), calcia (calcium oxide, CaO), ceria (cerium (IV) oxide, CeO2), tin oxide (SnO2), zinc oxide (ZnO), steatite (magnesium metasilicate, MgO·SiO2), -Dierite (2MgO·2Al2O3·5SiO2), mullite (3Al2O3·2SiO2), ferrite (MnFe2O4), spinel (MgAl2O4), zircon (ZrSiO4), barium titanate (BaTiO3), lead titanate (PbTiO3), forsterite (Mg2SiO4), phosphorus-doped tin oxide (PTO), antimony-doped tin oxide (ATO), tin-doped indium oxide (ITO), etc. The oxide ceramics may be used alone or in combination of two or more.

[0036] Examples of non-oxide ceramics include nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, and phosphate compounds. Examples of nitride ceramics include boron nitride (BN), titanium nitride (TiN), silicon nitride (Si3N4), gallium nitride (GaN), aluminum nitride (AlN), and carbon nitride (CN x ), sialon (Si3N4-AlN-Al2O3 solid solution), etc. Examples of carbide ceramics include tungsten carbide (WC), chromium carbide (CrC), vanadium carbide (VC), niobium carbide (NbC), molybdenum carbide (MoC), tantalum carbide (TaC), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), silicon carbide (SiC), and boron carbide (B4C). Examples of boride ceramics include molybdenum boride (MoB), chromium boride (CrB2), hafnium boride (HfB2), zirconium boride (ZrB2), tantalum boride (TaB2), and titanium boride (TiB2). Examples of silicide ceramics include zirconium oxide silicate, hafnium oxide silicate, titanium oxide silicate, lanthanum oxide silicate, yttrium oxide silicate, titanium oxide silicate, tantalum oxide silicate, and tantalum oxynitride silicate. Examples of the phosphate compound include hydroxyapatite and calcium phosphate. The non-oxide ceramics may be used singly or in combination of two or more.

[0037] The ceramic particles 21 are preferably at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. When the ceramic particles 21 are at least one compound selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide, plasma resistance is improved.

[0038] The average primary particle diameter of the ceramic particles 21 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 10 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle diameter of the ceramic particles 21 is within the above range, the voids in the protrusions 14 are reduced, and the withstand voltage of the protrusions 14 is improved.

[0039] The average primary particle size of the ceramic particles 21 can be measured by a laser diffraction / scattering method.

[0040] The content of ceramic particles 21 in the ceramic film 16 is preferably 80% by mass or more and 98% by mass or less, and more preferably 90% by mass or more and 96% by mass or less, based on the total mass (100% by mass) of the ceramic film 16. If the content of ceramic particles 21 is less than the lower limit, the viscosity becomes too low, making it difficult to form dots by mask printing. If the content of ceramic particles 21 exceeds the upper limit, the ceramic particles 21 are less likely to bond together, making chipping more likely to occur.

[0041] <Metal oxide 22> The metal oxide 22 is a metal oxide obtained by heat treating an organometallic compound to decompose and remove organic components and oxidize the metals that make up the organometallic compound. Examples of the metal oxide 22 include oxides of gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum. Specific examples of the metal oxide 22 include aluminum oxide, yttrium oxide, magnesium oxide, nickel oxide, and zinc oxide. The metal oxide 22 may be used singly or in combination of two or more kinds.

[0042] The metal oxide 22 is preferably at least one selected from the group consisting of aluminum oxide, yttrium oxide, and magnesium oxide. That is, the metal oxide 22 is preferably alumina (aluminum oxide, Al2O3), yttria (yttrium oxide, YO3), or magnesia (magnesium oxide, MgO). When the metal oxide 22 is yttria (yttrium oxide, YO3) or magnesia (magnesium oxide, MgO), plasma resistance is further improved.

[0043] The content of the metal oxide 22 in the ceramic film 16 is preferably 2% by mass or more and 20% by mass or less, and more preferably 4% by mass or more and 10% by mass or less, based on the total mass (100% by mass) of the ceramic film 16. If the content of the metal oxide 22 is less than the lower limit, the ceramic particles 21 will not bond together, making it difficult to ensure the strength of the protrusions. If the content of the metal oxide 22 exceeds the upper limit, it will be difficult to form dots.

[0044] The ceramic film 16 may contain components other than the ceramic particles 21 and the metal oxide 22. Examples of components other than the ceramic particles 21 and the metal oxide 22 include resins. By including resins, the strength of the protrusions and the withstand voltage can be improved.

[0045] According to the electrostatic chuck device 10 of this embodiment, it is possible to provide an electrostatic chuck device that has excellent plasma resistance and high mechanical strength.

[0046] [Manufacturing method of electrostatic chuck device] Hereinafter, a method for manufacturing an electrostatic chuck device according to this embodiment will be described with reference to FIG.

[0047] "Paint preparation process (paint preparation process)" The method for manufacturing an electrostatic chuck device according to the present embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate. As the ceramic particles, those described above are used.

[0048] The content of ceramic particles in the coating material is preferably 20% by mass or more and 80% by mass or less, and more preferably 40% by mass or more and 70% by mass or less, based on the total mass of the coating material (100% by mass). If the content of ceramic particles is less than the lower limit, the strength of the protrusions decreases, causing chipping of the protrusions and likely causing particle generation. If the content of ceramic particles exceeds the upper limit, the viscosity of the coating material increases, making coating difficult.

[0049] The content of the metal resinate in the coating material is preferably 20% by mass or more and 80% by mass or less, and more preferably 30% by mass or more and 60% by mass or less, based on the total mass of the coating material (100% by mass). If the content of the metal resinate is less than the lower limit, the viscosity of the coating material increases, making application difficult. If the content of the metal resinate exceeds the upper limit, bulk is generated in the protrusions, reducing their strength. This makes the protrusions more susceptible to chipping, causing particle generation.

[0050] The ratio of the content of ceramic particles to the content of metal resinate in the coating material is preferably 2:8 to 8:2 by mass, and more preferably 4:6 to 6:4. When the content ratio of ceramic particles to metal resinate is within the above range, the ceramic particles can be bonded together by the metal oxide.

[0051] <Metal resinate> Metal resinates are liquid or paste-like substances containing organometallic compounds. When metal resinates are heat-treated, the organic components are oxidatively decomposed and removed, and the metals that make up the organometallic compounds are oxidized to produce high-purity metal oxides. The resulting metal oxides form extremely thin metal films. Using metal resinates, metal films with thicknesses of, for example, approximately 0.1 μm to 0.6 μm can be obtained. This metal film bonds at least some of the ceramic particles together to form a ceramic film.

[0052] Metal resinates are synthesized by reacting halides, nitrates, acetates, or oxides of the following metal components with carboxylic acids, polynuclear fatty acids such as abietic acid, or gum rosin containing abietic acid as the main component. Examples of carboxylic acids that can be used include aliphatic carboxylic acids, cyclic aliphatic carboxylic acids, and aromatic carboxylic acids.

[0053] Examples of metal components include gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum. The metal components may be used alone or in combination of two or more.

[0054] <Solvent> The coating material is preferably mixed with a solvent, such as alcohols, ketones, esters, hydrocarbons, and ethers. Examples of alcohols include methanol, ethanol, propanol, and butanol. Examples of ketones include methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone. Examples of esters include ethyl acetate, propyl acetate, and butyl acetate. Examples of hydrocarbons include toluene and xylene. Examples of ethers include methyl cellosolve, ethyl cellosolve, butyl cellosolve, and tetrahydrofuran.

[0055] <Other ingredients> The coating material may contain components other than the ceramic particles, metal resinate, and solvent, such as a dispersant and a surfactant.

[0056] The coating material can be prepared, for example, by stirring and mixing ceramic particles, metal resinate, and a solvent using a stirring device such as a planetary stirrer, a homogenizer, a high-pressure jet mill, or an ultrasonic stirrer.

[0057] "Process for forming electrodes (electrode formation process)" The manufacturing method of the electrostatic chuck device of this embodiment may include an electrode forming step of forming the electrode 12 on one surface (upper surface) 11a of the base 11. In the electrode formation step, a metal thin film (metal thin film) is formed by vapor-depositing a metal such as copper on one surface 11a of the base 11. Thereafter, etching is performed to pattern the metal thin film into a predetermined shape, thereby forming the electrode 12.

[0058] "Step of forming ceramic layer 13 (ceramic layer 13 forming step)" The method for manufacturing the electrostatic chuck device of this embodiment may include a ceramic layer 13 forming step of forming the ceramic layer 13 on one surface (upper surface) 11a of the base 11 so as to cover the electrode 12.

[0059] When the ceramic layer 13 is a sintered ceramic body, first, an adhesive is applied to one surface (upper surface) 11a of the base 11 so as to cover the electrodes 12, thereby forming an adhesive layer (not shown). Next, a ceramic sintered body is laminated on one surface (upper surface) 11a of the base 11 via an adhesive layer so as to cover the electrode 12.

[0060] When the ceramic layer 13 is a ceramic sprayed body, the ceramic sprayed body is formed by spraying the above-mentioned material on one surface (upper surface) 11a of the base 11 so as to cover the electrode 12. As a method for forming the ceramic sprayed body by spraying, a plasma spraying method or the like is used.

[0061] "Step of forming ceramic layer 15 (ceramic layer 15 forming step)" In the ceramic layer 15 forming step, a masking sheet having the shape of the predetermined protrusions 14 is placed on one surface (upper surface) 13a of the ceramic layer 13, and ceramic particles containing a resin binder are applied to form the ceramic layer 15. Thereafter, the masking sheet is removed, and the layer is heated, dried, and cured to obtain the ceramic layer 15 having the shape of the protrusions 14. Since the ceramic layer 15 can be formed by coating, it is possible to produce a thick film, and it can be produced by a single coating process, which shortens the production time compared to ceramic spraying or ceramic sintering.

[0062] Examples of methods for applying the above slurry include coating methods using coating devices such as spray, gravure coater, roll coater, blade coater, air knife coater, and rod coater, dip coating, and printing methods such as offset printing and screen printing.

[0063] The thickness of the coating film of the slurry is preferably 1 μm or more and 200 μm or less, and more preferably 10 μm or more and 50 μm or less. When the thickness of the coating film is equal to or greater than the lower limit, the ceramic layer obtained after the heating step exhibits sufficient plasma resistance and voltage resistance. When the thickness of the coating film is equal to or less than the upper limit, the ceramic layer obtained after the heating step generates sufficient adsorption force.

[0064] Heating methods for the slurry coating include thermal heating, plasma heating, infrared heating, and lamp heating. The heating temperature and heating time for the slurry coating are, for example, as follows: The coating is dried by heating at 100°C to 150°C for 1 minute to 10 minutes to remove the solvent contained in the coating. The coating is then heated at 100°C to 300°C for 30 minutes to 2 hours to obtain ceramic layer 15.

[0065] "Ceramic film 16 coating process" In the coating process of the ceramic film 16, the coating film is formed by coating one surface (top surface) 15a and the other surface (side surface) 15b of the ceramic layer 15 with the above-mentioned paint. Specifically, one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 13a of the ceramic layer 13 are coated.

[0066] Examples of methods for applying the paint include coating methods using coating devices such as spray, gravure coater, roll coater, blade coater, air knife coater, and rod coater, dip coating, and printing methods such as offset printing and screen printing.

[0067] The thickness of the coating film is preferably 1 μm or more and 80 μm or less, and more preferably 5 μm or more and 50 μm or less. When the thickness of the coating film is equal to or greater than the lower limit, the ceramic film obtained after the heating step exhibits sufficient plasma resistance and voltage resistance. When the thickness of the coating film is equal to or less than the upper limit, the ceramic film obtained after the heating step generates sufficient adsorption force.

[0068] "Heating process" In the heating step, the coating film formed on the ceramic layer 15 in the coating step is heated. As a result, a ceramic film 16 containing the above-described ceramic particles and metal oxide is formed on one surface (upper surface) 15a of the ceramic layer 15.

[0069] Methods for heating the coating film include thermal heating, plasma heating, infrared heating, lamp heating, etc. By adding ultraviolet irradiation to these heating methods, organic components can be removed at lower temperatures to obtain a metal oxide film.

[0070] The heating temperature and heating time for the coating film are, for example, as follows: The coating film is dried by heating at 100°C to 150°C for 1 to 10 minutes to remove the solvent contained in the coating film. The coating film is then heated at 500°C to 700°C for 30 to 2 hours to obtain a ceramic film. By irradiating the resinate with ultraviolet light to make the organic matter in the resinate more easily decomposed, heat treatment can also be performed at a lower temperature (400°C or lower).

[0071] The method for manufacturing an electrostatic chuck device according to this embodiment may also include a polishing step of polishing the surfaces 16a of the protrusions obtained through the heating step. By polishing the surface 16a of the protrusions 14 in the polishing step so that the arithmetic mean roughness (Ra) falls within the above range, the adsorption force of the ceramic film can be improved.

[0072] According to the method for manufacturing a ceramic film of this embodiment, it is possible to provide an electrostatic chuck device having protrusions that are excellent in plasma resistance and have high adhesion.

[0073] <Other embodiments> It should be noted that the present invention is not limited to the above-described embodiment.

[0074] For example, an electrostatic chuck device 100 according to a first modified example as shown in Fig. 3 and an electrostatic chuck device 200 according to a second modified example as shown in Fig. 4 may be employed. In the electrostatic chuck devices 100 and 200 according to the modified examples, the same components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted, with only the differences being described.

[0075] [First Modification] 3 includes a base 11, an electrode 12, a ceramic layer 13, a protrusion 14, a first adhesive layer 110, a first insulating organic film 120, and a second adhesive layer 130. The first insulating organic film 120 is attached to one surface (top surface) 11a of the base 11 via the first adhesive layer 110. The electrode 12 is formed on one surface (top surface) 120a of the first insulating organic film 120. The ceramic layer 13 is formed on the electrode 12 via a second adhesive layer 130 formed on the one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., the one surface (top surface) 12a and the side surface 12b of the electrode 12. The protrusions 14 are formed on one surface (upper surface) 13a of the ceramic layer 13.

[0076] <Adhesive layer> Examples of adhesives that constitute the first adhesive layer 110 and the second adhesive layer 130 include adhesives whose main component is at least one type of resin selected from the group consisting of epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, etc.

[0077] Examples of epoxy resins include bifunctional or polyfunctional epoxy resins such as bisphenol-type epoxy resins, phenol novolac-type epoxy resins, cresol novolac-type epoxy resins, glycidyl ether-type epoxy resins, glycidyl ester-type epoxy resins, glycidyl amine-type epoxy resins, trihydroxyphenylmethane-type epoxy resins, tetraglycidylphenolalkane-type epoxy resins, naphthalene-type epoxy resins, diglycidyl diphenylmethane-type epoxy resins, and diglycidyl biphenyl-type epoxy resins. Among these, bisphenol-type epoxy resins are preferred. Among bisphenol-type epoxy resins, bisphenol A-type epoxy resins are particularly preferred. Furthermore, when an epoxy resin is used as the main component, the adhesive can also contain, as necessary, curing agents or curing accelerators for epoxy resins, such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, and organic peroxides.

[0078] Examples of phenol resins include alkylphenol resins, p-phenylphenol resins, novolak phenol resins such as bisphenol A type phenol resins, resol phenol resins, polyphenyl paraphenol resins, and the like.

[0079] Examples of styrene-based block copolymers include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), and styrene-ethylene-propylene-styrene copolymer (SEPS).

[0080] The thickness of the first adhesive layer 110 is not particularly limited. The thickness of the first adhesive layer 110 is preferably 1 μm or more and 100 μm or less, and more preferably 5 μm or more and 20 μm or less. If the thickness of the first adhesive layer 110 is less than the lower limit, the withstand voltage is likely to decrease. If the thickness of the first adhesive layer 110 exceeds the upper limit, the thermal conduction is likely to deteriorate.

[0081] The thickness of the second adhesive layer 130 is not particularly limited. The thickness of the second adhesive layer 130 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 50 μm or less. If the thickness of the first adhesive layer 110 is less than the lower limit, the withstand voltage is likely to decrease. If the thickness of the second adhesive layer 130 exceeds the upper limit, the thermal conduction is likely to deteriorate. The first adhesive layer 110 and the second adhesive layer 130 may be made of the same material and may have different thicknesses.

[0082] <First insulating organic film 120> The material constituting the first insulating organic film 120 is not particularly limited, and examples thereof include polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyamideimide, polyethersulfone, polyphenylene sulfide, polyetherketone, polyetherimide, triacetyl cellulose, silicone rubber, and polytetrafluoroethylene. Among these, polyesters, polyolefins, polyimide, silicone rubber, polyetherimide, polyethersulfone, and polytetrafluoroethylene are preferred because of their excellent insulating properties, and polyimide is more preferred. Examples of polyimide films that can be used include Kapton (trade name) manufactured by DuPont-Toray Co., Ltd. and Upilex (trade name) manufactured by Ube Industries, Ltd.

[0083] The thickness of the first insulating organic film 120 is not particularly limited. The thickness of the first insulating organic film 120 is preferably 10 μm or more and 100 μm or less, and more preferably 25 μm or more and 50 μm or less. When the thickness of the first insulating organic film 120 is equal to or greater than the lower limit, insulation properties can be ensured. When the thickness of the first insulating organic film 120 is equal to or less than the upper limit, sufficient adhesive force is generated by the electrode 12.

[0084] According to the electrostatic chuck device 100 of the first modified example, it is possible to provide an electrostatic chuck device having protrusions that are excellent in plasma resistance and have high adhesion.

[0085] [Manufacturing Method of Electrostatic Chuck Device of First Modification] The manufacturing method of the first modified electrostatic chuck device includes a step of laminating a first insulating organic film 120 on one surface (top surface) of a base 11 via a first adhesive layer 110 (hereinafter referred to as the "insulating organic film 120 lamination step"), a step of forming an electrode 12 on one surface (top surface) of the first insulating organic film 120 (electrode formation step), a step of forming a ceramic layer 13 on one surface (top surface) of the electrode 12 via a second adhesive layer 130 (ceramic layer 13 formation step), a step of forming a ceramic layer 15 on one surface (top surface) of the ceramic layer 13 (ceramic layer 15 formation step), a step of applying the above-mentioned paint to form a coating film (ceramic film 16 coating step), and a step of heating the coating film (heating step). Hereinafter, a method for manufacturing an electrostatic chuck device according to the first modified example will be described with reference to FIG.

[0086] "Paint preparation process" The method for manufacturing an electrostatic chuck device of this embodiment may include a paint preparation step of preparing paint containing ceramic particles and a metal resinate, similar to the method for manufacturing an electrostatic chuck device of the above-described embodiment. The paint used is the same as that used in the manufacturing method of the electrostatic chuck device of the above embodiment.

[0087] "Insulating organic film 120 lamination process" In the step of laminating the insulating organic film 120, first, the above adhesive is applied to one surface (upper surface) 11a of the base 11 to form the first adhesive layer 110.

[0088] Methods for applying adhesive to one surface (upper surface) 11a of the base 11 include, for example, coating methods using coating devices such as gravure coaters, roll coaters, blade coaters, air knife coaters, and rod coaters, and printing methods such as offset printing and screen printing.

[0089] Next, a first insulating organic film 120 is laminated on one surface (upper surface) 11a of the base 11 with a first adhesive layer 110 interposed therebetween. Thereafter, the laminate including the base 11, the first adhesive layer 110, and the first insulating organic film 120 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, thereby hardening the first adhesive layer 110.

[0090] "Electrode formation process" In the electrode formation step, a metal thin film (metal thin film) is formed in the same manner as in the manufacturing method of the electrostatic chuck device of the above embodiment on one surface (upper surface) 120a of the first insulating organic film 120 laminated on one surface (upper surface) 11a of the base 11. Thereafter, etching is performed to pattern the metal thin film into a predetermined shape, thereby forming the electrode 12.

[0091] "Ceramic layer 13 formation process" In the ceramic layer 13 formation process, first, the above-mentioned adhesive is applied to one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., one surface (top surface) 12a and side surface 12b of the electrode 12, to form a second adhesive layer 130.

[0092] The adhesive can be applied to one surface (upper surface) 120a of the first insulating organic film 120 and the electrode 12 by the same method as that used to form the first adhesive layer 110 described above.

[0093] Next, the ceramic layer 13 is laminated on one surface (upper surface) 120a of the first insulating organic film 120 via the second adhesive layer . Thereafter, the laminate including the base 11, the first adhesive layer 110, the first insulating organic film 120, the electrode 12, the second adhesive layer 130 and the ceramic layer 13 is heated at a predetermined temperature for a predetermined time or left at room temperature for a predetermined time, thereby hardening the second adhesive layer 130.

[0094] "Ceramic layer 15 formation process" In the ceramic layer 15 forming step, the ceramic layer 15 is formed on one surface (upper surface) 13a of the ceramic layer 13 in the same manner as in the method for manufacturing the electrostatic chuck device of the above-described embodiment.

[0095] "Ceramic film 16 coating process" In the coating process of the ceramic film 16, in the same manner as in the manufacturing method of the electrostatic chuck device of the above-mentioned embodiment, the above-mentioned paint is applied to one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 13a of the ceramic layer 13 to form a coating film.

[0096] "Heating process" In the heating process, similarly to the manufacturing method of the electrostatic chuck device of the above-described embodiment, the coating film formed in the coating process on one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 13a of the ceramic layer 13 is heated to obtain the convex portion 14.

[0097] Furthermore, the method for manufacturing an electrostatic chuck device of this embodiment may include a polishing step for polishing the surfaces 16a of the protrusions 14, similar to the method for manufacturing a ceramic film of the above-described embodiment.

[0098] According to the manufacturing method of the electrostatic chuck device of the first modified example, it is possible to provide an electrostatic chuck device having protrusions that are excellent in plasma resistance and have high adhesion.

[0099] [Second Modification] An electrostatic chuck device 200 according to a second modified example shown in FIG. 4 includes a base 11, an electrode 12, a protrusion 14, a first adhesive layer 110, a first insulating organic film 120, a second adhesive layer 130, and a second insulating organic film 210. The first insulating organic film 120 is attached to one surface (top surface) 11a of the base 11 via the first adhesive layer 110. The electrode 12 is formed on one surface (top surface) 120a of the first insulating organic film 120. The second insulating organic film 210 is formed on the one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., via a second adhesive layer 130 formed so as to cover one surface (top surface) 12a and a side surface 12b of the electrode 12. The protrusions 14 are formed on one surface (upper surface) 210a of the second insulating organic film 210.

[0100] <Insulating organic film 210> The second insulating organic film 210 may be similar to the first insulating organic film 120 in the above-described first modified electrostatic chuck device 100. The first insulating organic film 120 and the second insulating organic film 210 may be made of the same material and may have different thicknesses.

[0101] According to the electrostatic chuck device 200 of the second modified example, it is possible to provide an electrostatic chuck device that has excellent plasma resistance and high mechanical strength.

[0102] [Method for manufacturing electrostatic chuck device according to the second modified example] The manufacturing method of the second modified electrostatic chuck device includes a step of forming an electrode 12 on one surface (upper surface) of a first insulating organic film 120 (electrode formation step), a step of laminating a second insulating organic film 210 on one surface (upper surface) of the electrode 12 via a second adhesive layer 130 (referred to as an insulating organic film 210 lamination step), a step of laminating the first insulating organic film 120 on one surface (upper surface) of a base 11 via a first adhesive layer 110 (hereinafter referred to as an "insulating organic film 120 lamination step"), a step of forming a ceramic layer 15 on one surface (upper surface) of the second insulating organic film 210 (ceramic layer 15 formation step), a step of applying the above-mentioned paint to form a coating film (ceramic film 16 coating step), and a step of heating the coating film (heating step). Hereinafter, a method for manufacturing the electrostatic chuck device of the second modified example will be described with reference to FIG.

[0103] "Paint preparation process" The method for manufacturing an electrostatic chuck device of this embodiment may include a paint preparation step of preparing paint containing ceramic particles and a metal resinate, similar to the method for manufacturing an electrostatic chuck device of the above-described embodiment. The paint used is the same as that used in the manufacturing method of the electrostatic chuck device of the above embodiment.

[0104] "Electrode formation process" In the electrode formation step, a metal thin film (metal thin film) is formed on one surface (upper surface) 120a of the first insulating organic film 120 in the same manner as in the manufacturing method of the electrostatic chuck device of the above-mentioned embodiment. Thereafter, etching is performed to pattern the metal thin film into a predetermined shape, thereby forming the electrode 12.

[0105] "Insulating organic film 210 lamination process" In the insulating organic film 210 lamination process, first, the above-mentioned adhesive is applied to one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., one surface (top surface) 12a and side surface 12b of the electrode 12, to form a second adhesive layer 130.

[0106] The adhesive can be applied to one surface (upper surface) 120a of the first insulating organic film 120 and the electrode 12 by the same method as that used to form the first adhesive layer 110 described above.

[0107] Next, a second insulating organic film 210 is laminated on one surface (upper surface) 120a of the first insulating organic film 120 via a second adhesive layer . Thereafter, the laminate including the first insulating organic film 120, the electrode 12, the second adhesive layer 130, and the second insulating organic film 210 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, thereby hardening the second adhesive layer 130 and obtaining laminate a.

[0108] "Insulating organic film 120 lamination process" In the insulating organic film laminating step, the exposed surface of the first insulating organic film 120 in the laminate a obtained above is laminated on one surface (upper surface) 11a of the base 11 via the first adhesive layer 110, in the same manner as in the manufacturing method of the electrostatic chuck device of the above embodiment, to obtain a laminate b. Thereafter, the laminate b is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, to harden the first adhesive layer 110. The adhesive layer 110 and the adhesive layer 130 may be produced by applying an adhesive coating or may be produced as an adhesive sheet.

[0109] "Ceramic layer 15 formation process" In the ceramic layer 15 forming step, the ceramic layer 15 is formed on one surface (upper surface) 210a of the second insulating organic film 210 in the same manner as in the method for manufacturing the electrostatic chuck device of the above-described embodiment.

[0110] "Ceramic film 16 coating process" In the coating process of the ceramic film 16, in the same manner as in the manufacturing method of the electrostatic chuck device of the above-mentioned embodiment, the above-mentioned paint is applied to one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 210a of the second insulating organic film 210 to form a coating film.

[0111] "Heating process" In the heating process, similarly to the manufacturing method of the electrostatic chuck device of the above-described embodiment, the coating film formed in the coating process on one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 210a of the second insulating organic film 210 is heated to obtain the convex portion 14.

[0112] Furthermore, the method for manufacturing an electrostatic chuck device of this embodiment may include a polishing step for polishing the surfaces 16a of the protrusions 14, similar to the method for manufacturing a ceramic film of the above-described embodiment.

[0113] According to the manufacturing method of the electrostatic chuck device of the second modified example, it is possible to provide an electrostatic chuck device having protrusions that are excellent in plasma resistance and have high adhesion. [Example]

[0114] The present invention will be explained in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

[0115] [Example 1] "Preparation of paint for forming ceramic layer 15" A coating material for forming ceramic layer 15 was obtained by mixing and dissolving 100 parts by mass of polyacrylamide resin and 2000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm in an appropriate amount of water.

[0116] "Preparation of coating material for forming ceramic film 16" Four parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was added to six parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 0.3 μm, and mixed using a planetary centrifugal mixer (manufactured by Shashin Kagaku Co., Ltd., product name: Kakuhunter) to obtain a coating material for forming ceramic film 16.

[0117] "Fabrication of electrostatic chuck device" An electrostatic chuck device having a configuration similar to that of the second modified example shown in FIG. 4 was fabricated. A 9 μm thick copper foil was formed by plating one surface of a 12 μm thick polyimide resin sheet as the first insulating organic film 120. After coating the copper foil surface with photoresist, a pattern was exposed to light and then developed, and unnecessary copper foil was removed by etching. Thereafter, the copper foil on the polyimide resin sheet was washed to remove the photoresist, and an electrode 12 was formed to obtain a laminate composed of a polyimide resin sheet and copper foil. This electrode 12 is a comb-shaped electrode having two comb-shaped structures in which a 5 mm-wide conductive portion and a 5 mm-wide insulating portion are alternately arranged.

[0118] An insulating adhesive sheet semi-cured by drying and heating was laminated as second adhesive layer 130 (20 μm thick) on the surface of the above laminate on which electrode 12 was formed, and a 12 μm thick polyimide resin sheet was bonded to the surface of the insulating adhesive sheet as second insulating organic film 210 and adhered by heat treatment. The insulating adhesive sheet used was a mixture of 27 parts by mass of bismaleimide resin, 3 parts by mass of diaminosiloxane, 20 parts by mass of resol phenolic resin, 10 parts by mass of biphenyl epoxy resin, and 240 parts by mass of ethyl acrylate-butyl acrylate-acrylonitrile copolymer dissolved in an appropriate amount of tetrahydrofuran and formed into a sheet.

[0119] Next, a semi-cured insulating adhesive sheet similar to that described above was laminated as a first adhesive layer 110 on the side of the polyimide resin sheet on which the electrode 12 was formed, opposite to the side on which the electrode 12 was formed, and the sheet was attached to one side of an aluminum base 11 and bonded by heat treatment.

[0120] Next, a mask sheet (heat-resistant nonwoven fabric) 300 having a large number of through holes 310 as shown in Fig. 5 was placed on the surface of the polyimide resin sheet, and the paint for forming the ceramic layer 15 was applied to the mask sheet and dried at 100°C for 10 minutes to remove the solvent. Thereafter, the mask sheet was peeled off, and a ceramic layer 15 having a plurality of convex shapes and a thickness of approximately 100 µm was formed on the polyimide resin sheet. Next, the ceramic film-forming paint was sprayed onto the entire surface of the polyimide resin sheet having the convex ceramic layer 15, and the solvent was removed by drying in the atmosphere. After that, the sheet was heated in a thermostatic chamber at 500°C for 2 hours, and the surface of the convex portions of the ceramic film was polished with a #200 nanodiamond polyimide polishing sheet to obtain an electrostatic chuck device having multiple convex portions made of a ceramic film 16 with a thickness of approximately 40 μm. After the surface of the convex portions of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or other defects were observed, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0121] [Example 2] An electrostatic chuck device of Example 2 was produced in the same manner as in Example 1, except that 4 parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0122] [Example 3] An electrostatic chuck device of Example 3 was produced in the same manner as in Example 1, except that 2 parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 0.3 μm and 8 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0123] [Example 4] An electrostatic chuck device of Example 4 was produced in the same manner as in Example 1, except that 8 parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 0.3 μm and 2 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0124] [Example 5] An electrostatic chuck device of Example 5 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 0.1 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0125] [Example 6] An electrostatic chuck device of Example 6 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical alumina particles (manufactured by Denka, Al2O3) having an average primary particle diameter of 50 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0126] [Example 7] An electrostatic chuck device of Example 7 was produced in the same manner as in Example 1, except that 4 parts by mass of a toluene solution of magnesium stearate (solid content 10% by mass) was added instead of 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) as the coating material for forming the ceramic film 16. After the surface of the convex portion of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portion, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0127] [Example 8] An electrostatic chuck device of Example 8 was produced in the same manner as in Example 1, except that 4 parts by mass of a toluene solution of nickel stearate (solid content 10% by mass) was added instead of 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) as the coating material for forming the ceramic film 16. After the surface of the convex portion of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portion, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0128] [Example 9] An electrostatic chuck device of Example 9 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical magnesia particles (MgO, manufactured by Denka Corporation) having an average primary particle diameter of 0.3 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the coating material for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0129] [Example 10] An electrostatic chuck device of Example 10 was produced in the same manner as in Example 1, except that 4 parts by mass of spherical magnesia particles (MgO, manufactured by Denka Corporation) having an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the coating material for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[0130] [Example 11] An electrostatic chuck device of Example 11 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of polyacrylamide resin and 2,000 parts by mass of yttria particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of water.

[0131] [Example 12] An electrostatic chuck device of Example 12 was produced in the same manner as in Example 1, except that a mixture of 2,000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm with 100 parts by mass of a polyimide resin solution was used as the paint for forming ceramic layer 15.

[0132] [Example 13] An electrostatic chuck device of Example 13 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of epoxy resin and 2000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of solvent.

[0133] [Example 14] An electrostatic chuck device of Example 14 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of acrylic resin and 2000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of solvent.

[0134] [Comparative Example 1] An electrostatic chuck device of Comparative Example 1 was produced in the same manner as in Example 1, except that the paint for forming the ceramic film 16 used in Example 1 was used as the paint for forming the ceramic layer 15.

[0135] [Checking the ceramic membrane] The ceramic film 16 formed on the surface of each of the electrostatic chuck devices in Examples 1 to 14 was photographed with a scanning electron microscope (SEM) to confirm the state of each particle. As a result, it was confirmed that in the ceramic film 16 formed on the surface of each of the electrostatic chuck devices in Examples 1 to 14, at least some of the ceramic particles were bonded together via metal oxide.

[0136] [evaluation] The electrostatic chuck devices obtained in Examples 1 to 14 were used to carry out the following voltage resistance test.

[0137] <Voltage resistance> A copper foil was placed on the attraction surface of the electrostatic chuck device, and the copper foil and the base were grounded. Next, a voltage was applied between the terminals provided at both ends of the comb-shaped electrode, and then the applied voltage difference (voltage difference between the terminals) was gradually increased, and the applied voltage difference at the time when dielectric breakdown occurred was measured.

[0138] As a result of evaluating the voltage resistance, the electrostatic chuck devices of Examples 1 to 14 did not suffer from dielectric breakdown even when the applied voltage difference was 20 kV or more.

[0139] Furthermore, the electrostatic chuck devices obtained in Examples 1 to 14 and Comparative Example 1 were used to carry out the following adhesion test. <Adhesion> The adhesion of the electrostatic chuck device was evaluated by a tape peeling test, which was performed in accordance with "1) Tape test method" in "g) Peeling test method" of JISH8504 (1999) "Methods for testing adhesion of plating." As a result, in the electrostatic chuck devices of Examples 1 to 14, no deposits were found on the adhesive surface of the adhesive tape. On the other hand, in the electrostatic chuck device of Comparative Example 1, some of the protrusions were attached to the adhesive surface of the adhesive tape. [Explanation of symbols]

[0140] 10 Electrostatic chuck device 11 Foundation 12 electrodes 13 Ceramic layer 14 Convex part 15 ceramic layers 16 Ceramic membrane 21 Ceramic particles 22 Metal oxides 100,200 Electrostatic chuck device 110 First adhesive layer 120 First insulating organic film 130 Second adhesive layer 210 Second insulating organic film

Claims

1. An electrostatic chuck device having a plurality of protrusions on an attraction surface, the protrusions have a ceramic film and a ceramic layer containing a resin binder, the ceramic membrane contains ceramic particles and a metal oxide; The electrostatic chuck device is characterized in that at least a portion of the ceramic particles are bonded to each other via the metal oxide.

2. 2. The electrostatic chuck device according to claim 1, wherein the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide.

3. 3. The electrostatic chuck device according to claim 1, wherein the ceramic particles have an average primary particle size of 0.1 μm to 50 μm.

4. 4. The electrostatic chuck device according to claim 1, wherein the metal oxide is a metal oxide obtained by heat-treating an organometallic compound to decompose and remove organic components and oxidize a metal constituting the organometallic compound.

5. 5. The electrostatic chuck device according to claim 4, wherein the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium.

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