Method for manufacturing a communication device

Abstract

To provide a method for manufacturing a communication device that improves yield.SOLUTION: A method for manufacturing a communication device 10 includes forming an antenna board assembly 20 and forming a circuit board assembly 30 separately from the antenna board assembly 20. The method for manufacturing the communication device 10 includes connecting the antenna board assembly 20 and the circuit board assembly 30 in a state in which a power feeding pad 202 and a power feeding line 120 are connected. Therefore, the step of forming the circuit board assembly 30 and the step of forming the antenna board assembly 20 are performed separately.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a communication device. [Background technology]

[0002] Conventionally, a communication device has been proposed that includes a wireless communication integrated circuit mounted on a substrate, an antenna, and a wiring layer that connects an electrode portion of the wireless communication integrated circuit to the antenna (see Patent Document 1).

[0003] In the communication device, a mold resin layer is formed to cover the substrate, the electrode portion of the wireless communication integrated circuit, the antenna, and the wiring layer. The antenna transmits a transmission signal output from the wireless communication integrated circuit through the wiring layer via electromagnetic waves. The wireless communication integrated circuit receives a reception signal via the antenna via electromagnetic waves, through the wiring layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Patent No. 10,157,807 Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-mentioned communication device, as described above, the electrode portion of the wireless communication integrated circuit and the antenna are connected by the wiring layer.

[0006] Here, in the manufacturing process for manufacturing a communication device, if the process of forming an integrated circuit for wireless communication, the process of forming an antenna, and the process of forming a wiring layer are carried out consecutively, the yield in manufacturing the communication device will decrease.

[0007] This is because, for example, even if the process of forming the wiring layer and the process of forming the antenna are carried out normally, if a problem occurs in the process of forming the wireless communication integrated circuit, the entire communication device will become defective.

[0008] SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a method for manufacturing a communication device that improves yield. [Means for solving the problem]

[0009] In order to achieve the above object, in the invention of claim 1, a method for manufacturing a communication device includes forming an antenna substrate (20A) including a first insulating substrate (100a-100d) formed in a plate shape from an electrically insulating material, an antenna (110) mounted on the first insulating substrate, and a feed line (120) mounted on the first insulating substrate and connected to the antenna; forming a circuit board (30A) separately from the antenna board, the circuit board (30A) comprising: a second insulating substrate (210) formed in a plate shape from an electrically insulating material; and a communication integrated circuit (200) mounted on the second insulating substrate, having a power supply terminal (202) for connecting an antenna via a power supply line, and transmitting a transmission signal from the antenna or receiving a reception signal via the antenna; With the power supply terminal and the power supply line connected, the antenna board and the circuit board are connected. Including, connecting the power supply terminal of the communication integrated circuit to the power supply line includes connecting the power supply terminal to the power supply line by a conductive member (285); The power supply terminal, the power supply line, and the conductive member of the communication integrated circuit are each formed of a conductive material containing copper. .

[0010] Therefore, according to the first aspect of the invention, the yield can be improved compared to when the circuit board and the antenna board are formed in succession.

[0011] In the invention of claim 2, a method for manufacturing a communication device includes forming an antenna substrate (20A) including a first insulating substrate (100a-100d) formed in a plate shape from an electrically insulating material, an antenna (110) mounted on the first insulating substrate, and a feed line (120) mounted on the first insulating substrate and connected to the antenna; a communication integrated circuit (200) having a power supply terminal (202) for connecting an antenna via a power supply line, for transmitting a transmission signal from the antenna and for receiving a reception signal via the antenna, formed separately from the antenna substrate; This includes connecting the communication integrated circuit and the antenna substrate while the power supply terminal and the power supply line are connected.

[0012] Therefore, according to the invention as set forth in claim 2, the yield can be improved compared to when the communication integrated circuit and the antenna substrate are formed in succession.

[0013] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and the specific components described in the embodiments described below. [Brief explanation of the drawings]

[0014] [Figure 1] 4 is a diagram showing a cross-sectional configuration of the communication device in the first embodiment, and is a cross-sectional view taken along line II in FIG. 3. FIG. [Figure 2] 1 is a perspective view for assisting in the description of an antenna, a feed line, and an electromagnetic shielding portion of a communication device according to a first embodiment, with the dielectric layer and some of the ground vias not shown. FIG. [Figure 3] 3 is a view of the communication device according to the first embodiment taken along the arrow III in FIG. 1, and is a diagram for assisting in the description of the ground layer, the through-hole in the ground layer, and the waveguide layer. FIG. [Figure 4] 4 is a cross-sectional view of the communication device according to the first embodiment taken along line IV-IV in FIG. 1, with the dielectric layer omitted, showing the positional relationship between the through hole in the ground layer, the antenna layer, and multiple ground vias, as viewed from one side in the thickness direction. [Figure 5] FIG. 2 is a cross-sectional view of the communication device according to the first embodiment taken along the line VV in FIG. 1, with the dielectric layer omitted from the illustration, showing the positional relationship between the ground layer, the through hole, the connection flange layer, and multiple ground vias, as viewed from one side in the thickness direction. [Figure 6] FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 1, in which the dielectric layer is omitted, of the communication device according to the first embodiment, showing the positional relationship between the ground layer, the through hole, the connecting long plate layer, the plurality of ground vias, and the plurality of power supply vias as viewed from one side in the thickness direction. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 1, in which the dielectric layer is not shown, of the communication device according to the first embodiment, showing the positional relationship between the ground layer, the through hole, the connection flange layer, the plurality of ground vias, and the plurality of power supply vias as viewed from one side in the thickness direction. [Figure 8] 2 is a block diagram showing a schematic configuration of an integrated circuit, an antenna layer, and a feed line in the communication device according to the first embodiment of FIG. 1. FIG. [Figure 9] 4 is a flowchart for assisting in the description of the manufacturing process of the communication device in the first embodiment of FIG. [Figure 10] 2A to 2C are cross-sectional views showing a manufacturing process of a circuit board, which is an unfinished component in the manufacturing process of the communication device in the first embodiment of FIG. 1. [Figure 11] 2A to 2C are cross-sectional views showing manufacturing steps of a ground layer and a waveguide layer in the communication device according to the first embodiment of FIG. 1. [Figure 12] 2A to 2C are cross-sectional views showing manufacturing steps of a ground layer and a waveguide layer in the communication device according to the first embodiment of FIG. 1. [Figure 13] 2A to 2C are cross-sectional views showing a manufacturing process of a plurality of ground vias in the communication device according to the first embodiment of FIG. [Figure 14] 2A to 2C are cross-sectional views showing a manufacturing process of a plurality of ground vias in the communication device according to the first embodiment of FIG. [Figure 15] 2A to 2C are cross-sectional views showing a manufacturing process of a dielectric layer in the communication device according to the first embodiment of FIG. [Figure 16] 2A to 2C are cross-sectional views showing manufacturing steps of the ground layer and the antenna layer in the communication device according to the first embodiment of FIG. 1. [Figure 17] 2A to 2C are cross-sectional views showing manufacturing steps of the ground layer and the antenna layer in the communication device according to the first embodiment of FIG. 1. [Figure 18] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a plurality of ground vias and a power feed via in the communication device according to the first embodiment of FIG. [Figure 19] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a plurality of ground vias and a power feed via in the communication device according to the first embodiment of FIG. [Figure 20] 2A to 2C are cross-sectional views showing a manufacturing process of a dielectric layer in the communication device according to the first embodiment of FIG. [Figure 21] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a ground layer and a connection flange layer in the communication device according to the first embodiment of FIG. [Figure 22] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a ground layer and a connection flange layer in the communication device according to the first embodiment of FIG. [Figure 23] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a plurality of ground vias and a power feed via in the communication device according to the first embodiment of FIG. [Figure 24] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a plurality of ground vias and a power feed via in the communication device according to the first embodiment of FIG. [Figure 25] 2A to 2C are cross-sectional views showing a manufacturing process of a dielectric layer in the communication device according to the first embodiment of FIG. [Figure 26] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a ground layer and a connecting long board layer in the communication device according to the first embodiment of FIG. [Figure 27] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a ground layer and a connecting long board layer in the communication device according to the first embodiment of FIG. [Figure 28] 2A to 2C are cross-sectional views showing a manufacturing process of a dielectric layer in the communication device according to the first embodiment of FIG. [Figure 29]1. FIG. 4 is a cross-sectional view showing a manufacturing process of a ground layer and a connection flange layer in the communication device according to the first embodiment of FIG. [Figure 30] 1. FIG. 4 is a diagram showing a manufacturing process of a connection layer in the communication device according to the first embodiment of FIG. 1, and is a cross-sectional view showing the configuration of the antenna substrate in a state where the antenna substrate is supported by a support wafer. [Figure 31] 2A to 2C are cross-sectional views showing a manufacturing process of a circuit board, which is an unfinished component in the manufacturing process of the communication device in the first embodiment of FIG. 1. [Figure 32] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of the circuit board in the communication device according to the first embodiment of FIG. [Figure 33] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a mold resin through-via in the circuit board of the communication device in the first embodiment of FIG. [Figure 34] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of a mold resin through-via in the circuit board of the communication device in the first embodiment of FIG. [Figure 35] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of an integrated circuit and a mold resin layer of a circuit board of the communication device according to the first embodiment of FIG. [Figure 36] 1. FIG. 4 is a cross-sectional view showing a manufacturing process of an insulating layer and a plurality of solder ball pads in the circuit board of the communication device according to the first embodiment of FIG. [Figure 37] 1. FIG. 4 is a cross-sectional view showing a manufacturing process for adding a support wafer to the circuit board of the communication device according to the first embodiment of FIG. [Figure 38] 1. FIG. 4 is a cross-sectional view showing a manufacturing process for peeling off a support wafer from the circuit board of the communication device in the first embodiment of FIG. [Figure 39] 1. FIG. 4 is a cross-sectional view showing a manufacturing process for forming a power supply electrode and a ground electrode in the circuit board of the communication device according to the first embodiment of FIG. [Figure 40] 1. FIG. 4 is a cross-sectional view showing a manufacturing process for forming a connection layer in the circuit board of the communication device according to the first embodiment of FIG. 1, and is a view for assisting in the description of the circuit configuration of the circuit board. [Figure 41]1. FIG. 4 is a cross-sectional view showing a manufacturing process for connecting a circuit board and an antenna board in the manufacturing process of the communication device in the first embodiment of FIG. [Figure 42] 1. FIG. 4 is a cross-sectional view showing a manufacturing step of connecting a circuit board and an antenna board in the manufacturing process of the communication device in the first embodiment of FIG. 1, and a cross-sectional view showing a manufacturing step of peeling off a support wafer in the circuit board. [Figure 43] 1. FIG. 4 is a cross-sectional view showing a manufacturing process for forming solder balls after connecting a circuit board and an antenna board in the manufacturing process of the communication device in the first embodiment of FIG. [Figure 44] FIG. 10 is a cross-sectional view for assisting in explaining the configuration of a communication device according to a second embodiment. [Figure 45] 10A and 10B are cross-sectional views for assisting in the description of the configuration of the antenna substrate in the manufacturing process of the communication device according to the second embodiment. [Figure 46] 10A to 10C are cross-sectional views showing a manufacturing process of a circuit board in a manufacturing process of a communication device according to the second embodiment. [Figure 47] 10 is a cross-sectional view showing a manufacturing process of a circuit board in the manufacturing process of a communication device according to the second embodiment, and a cross-sectional view showing a manufacturing process of adding a support wafer. FIG. [Figure 48] 10 is a cross-sectional view showing a manufacturing process of connecting a circuit board and an antenna board in the manufacturing process of the communication device according to the second embodiment of FIG. 2. FIG. [Figure 49] 10 is a cross-sectional view showing a manufacturing process of connecting a circuit board and an antenna board in the manufacturing process of the communication device according to the second embodiment of FIG. 2. FIG. [Figure 50] 10 is a cross-sectional view showing a manufacturing step of peeling off the support wafer after connecting the circuit board and the antenna board in the manufacturing process of the communication device according to the second embodiment of FIG. 2. FIG. [Figure 51] 10 is a cross-sectional view showing a manufacturing process of forming solder balls after connecting a circuit board and an antenna board in the manufacturing process of the communication device according to the second embodiment of FIG. 2. FIG. [Figure 52] 10A and 10B are cross-sectional views showing a manufacturing process for connecting a circuit board and an integrated circuit in the manufacturing process of the communication device according to the third embodiment. [Figure 53] 53 is a cross-sectional view showing a manufacturing step of connecting a circuit board and an integrated circuit in the manufacturing process of the communication device according to the third embodiment of FIG. 52. FIG. [Figure 54] FIG. 10 is a block diagram showing a schematic configuration of an integrated circuit, an antenna, and a power supply line in a communication device according to another embodiment. [Figure 55] FIG. 10 is a block diagram showing a schematic configuration of an integrated circuit, a transmitting antenna layer, and a receiving antenna layer in a communication device according to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0015] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, identical or equivalent parts are denoted by the same reference numerals in the drawings to simplify the description.

[0016] (First embodiment) A communication device 10 of the first embodiment will be described with reference to Figures 1 to 43. The communication device 10 of this embodiment includes an antenna board assembly 20 and a circuit board assembly 30, as shown in Figure 1.

[0017] For ease of explanation, the direction forming the thickness of the antenna substrate assembly 20 and the circuit substrate assembly 30 will be referred to as the thickness direction Ya, a first intersecting direction intersecting (e.g., perpendicular to) the thickness direction Ya will be referred to as the width direction Yb, and a second intersecting direction intersecting (e.g., perpendicular to) the thickness direction Ya and the width direction Yb will be referred to as the depth direction Yc.

[0018] The antenna substrate assembly 20 includes dielectric layers 100 a , 100 b , 100 c , and 100 d , an antenna 110 , a feed line 120 , an electromagnetic shielding portion 130 , and an insulating layer 140 .

[0019] The dielectric layers 100a, 100b, 100c, and 100d are each an electrical insulating layer made of an electrical insulating material having low dielectric characteristics and electrical insulation properties, such as polyimide, bismaleimide, etc. The dielectric layers 100a, 100b, 100c, and 100d are each formed in a plate shape that has a thickness in the thickness direction Ya and extends in the width direction Yb and depth direction Yc.

[0020] The dielectric layers 100a, 100b, 100c, and 100d of this embodiment are each a first insulating substrate made of an electrically insulating resin material.

[0021] The dielectric layers 100a, 100b, 100c, and 100d are stacked in the thickness direction Ya. Specifically, the dielectric layers 100a, 100b, 100c, and 100d are arranged from one side to the other in the thickness direction Ya in the order of the dielectric layer 100d, the dielectric layer 100c, the dielectric layer 100b, and the dielectric layer 100a.

[0022] 1 and 2, the antenna 110 includes an antenna layer 111 and a waveguide layer 113. The antenna layer 111 is an antenna element formed in the shape of a thin film that has a thickness in a thickness direction Ya and extends in a width direction Yb and a depth direction Yc.

[0023] In FIG. 2, in order to clearly illustrate the structure of the antenna 110 and other components of the communication device 10, the dielectric layers 100a, 100b, 100c, and 100d, as well as multiple ground vias 132d, 133c, 134c, 131b, and 132b, are omitted.

[0024] In this embodiment, the antenna layer 111 is formed in the shape of a long plate extending to one side in the depth direction Yc. The antenna layer 111 is formed so that its normal direction is parallel to the thickness direction Ya. The antenna layer 111 is disposed between the dielectric layers 100c and 100d.

[0025] 1 and 4, the antenna layer 111 is disposed in the through-hole 132k of the ground layer 132. Therefore, the antenna layer 111 is formed so as to be electrically insulated from the ground layer 132.

[0026] The antenna layer 111 is connected to a power supply pad 202 of the integrated circuit 200 of the circuit board assembly 30 via a power supply line 120 or the like. The power supply pad 202 is a power supply terminal for supplying a transmission signal to the power supply line 120 and for receiving a reception signal from the power supply line 120.

[0027] The waveguide layer 113 is disposed on one side of the dielectric layer 100d in the thickness direction Ya. The waveguide layer 113 is formed in the shape of a film that has a thickness in the thickness direction Ya and extends in the width direction Yb and the depth direction Yc. The waveguide layer 113 is formed in the shape of a plate having a rectangular surface whose normal direction is parallel to the thickness direction Ya.

[0028] 1 and 3, the waveguide layer 113 is disposed in the through-hole 131k of the ground layer 131. The waveguide layer 113 is formed so as to be electrically insulated from the ground layer 131. The waveguide layer 113 is formed so as to cover the antenna layer 111 from one side in the thickness direction Ya with the dielectric layer 100d interposed therebetween.

[0029] This ensures that the waveguide layer 113 is electrically insulated from the antenna layer 111 .

[0030] Here, the waveguide layer 113 constitutes a waveguide for guiding the electromagnetic waves output from the antenna layer 111 to one side in the thickness direction Ya, and for guiding the electromagnetic waves arriving from one side in the thickness direction Ya to the antenna layer 111.

[0031] In this embodiment, the waveguide layer 113 and the antenna layer 111 are each made of a conductive material containing copper.

[0032] The power supply line 120 includes power supply vias 121 , 122 , and 123 , connection flange layers 124 and 126 , a connection long plate layer 125 , and a power supply electrode 127 .

[0033] The power feed via 121 is a through-hole via formed to penetrate the dielectric layer 100c in the thickness direction Ya. The power feed via 121 is a third power feed conductor formed in a cylindrical shape with the axis C1 as its center line. The power feed via 121 of this embodiment also constitutes a first power feed line. The axis C1 is an imaginary line extending in the thickness direction Ya.

[0034] One side of the power-feed via 121 in the thickness direction Ya is connected to the antenna layer 111. The other side of the power-feed via 121 in the thickness direction Ya is connected to the connection flange layer 124. The connection flange layer 124 is disposed between the dielectric layers 100b and 100c.

[0035] The connection flange layer 124 is formed in a disk shape with the axis C1 as its center line. The connection flange layer 124 has a larger radial dimension with the axis C1 as its center line than the power feed vias 121, 122. Therefore, the connection flange layer 124 forms a flange portion that protrudes radially outward with the axis C1 as its center line relative to the power feed vias 121, 122.

[0036] 1 and 5, the connection flange layer 124 is disposed in the through-hole 133k of the ground layer 133. As a result, the connection flange layer 124 is disposed so as to be electrically insulated from the ground layer 133.

[0037] The power supply via 122 is a through-hole via formed to penetrate the dielectric layer 100b in the thickness direction Ya. The power supply via 122 is a second power supply conductor formed in a cylindrical shape with the axis C1 as the center line.

[0038] One side of the power supply via 122 in the thickness direction Ya is connected to the connection flange layer 124. As shown in Figures 1 and 6, the other side of the power supply via 122 in the thickness direction Ya is connected to one side of the connection elongated plate layer 125 in the depth direction Yc and one side in the width direction Yb.

[0039] 1 and 2, the connecting long plate layer 125 is formed in the shape of a film having a thickness in the thickness direction Ya and extending in the depth direction Yc. As shown in FIG. 1, the connecting long plate layer 125 is a first power supply conductor disposed between the dielectric layers 100a and 100b.

[0040] 1 and 6, the connection long plate layer 125 is disposed in the through-hole 134k of the ground layer 134. As a result, the connection long plate layer 125 is disposed so as to be electrically insulated from the ground layer 134.

[0041] The power supply via 123 is a through-hole via formed to penetrate the dielectric layer 100a in the thickness direction Ya. The power supply via 123 is formed in a cylindrical shape with an axis C2 as its center line. The axis C2 is an imaginary line extending in the thickness direction Ya. The axis C2 is offset in the depth direction Yc and in the width direction Yb with respect to the axis C1.

[0042] One side of the power supply via 123 in the thickness direction Ya is connected to the other side of the connecting long plate layer 125 in the depth direction Yc and the other side in the width direction Yb. The other side of the power supply via 123 in the thickness direction Ya is connected to the connecting flange layer 126.

[0043] In this embodiment, the power supply vias 122 and 121 are formed to extend in the thickness direction Ya from the connection long plate layer 125 to the antenna layer 111. The distance between the connection long plate layer 125 and the antenna layer 111 is set to 100 μm or more.

[0044] The connection flange layer 126 is formed in a disk shape with the axis C2 as its center line. The connection flange layer 126 has a larger radial dimension with the axis C2 as its center line than the power feed via 123. Therefore, the connection flange layer 126 forms a flange portion that protrudes radially outward from the power feed via 123 with the axis C1 as its center line.

[0045] 1, the connection flange layer 126 is disposed on the other side of the dielectric layer 100a in the thickness direction Ya. As shown in Fig. 7, the connection flange layer 126 is disposed in a through-hole 135k of the ground layer 135. As a result, the connection flange layer 126 is disposed so as to be electrically insulated from the ground layer 135.

[0046] The connecting flange layers 124 and 126 and the connecting long plate layer 125 are each formed as a thin film extending in a thickness direction Ya, a width direction Yb, and a depth direction Yc.

[0047] The power supply electrode 127 is disposed on the other side in the thickness direction Ya of the connection flange layer 126. One side of the power supply electrode 127 in the thickness direction Ya is connected to the connection flange layer 126. The power supply electrode 127 is formed so as to protrude from the insulating layer 140 to the other side in the thickness direction Ya.

[0048] The power supply vias 121, 122, and 123, the connecting long plate layer 125, the connecting flange layers 124 and 126, and the power supply electrode 127 are each formed of a conductive material containing copper.

[0049] The insulating layer 140 is formed in a plate shape so as to cover the other side in the thickness direction Ya of the connection flange layer 126 and the ground layer 135. The insulating layer 140 of this embodiment is made of an electrically insulating resin material such as polyimide.

[0050] 1 and 2, the electromagnetic shielding portion 130 is an electromagnetic shielding conductor including ground layers 131, 132, 133, 134, and 135. The electromagnetic shielding portion 130 is provided with a plurality of ground vias 131a, 131b, 131c, 131d, 132a, 132b, 132c, 132d, 133a, 133b, 133c, 134a, 134b, and 134c.

[0051] The ground layers 131, 132, 133, 134, and 135 are each formed as a thin film extending in a width direction Yb and a depth direction Yc, with a thickness direction Ya as the thickness direction. The ground layers 131, 132, 133, 134, and 135 are each formed of a conductive material containing copper.

[0052] Specifically, the ground layer 131 is disposed on one side of the dielectric layer 100d in the thickness direction Ya. As shown in Figures 1 and 3, the ground layer 131 has a through-hole 131k formed therethrough in the thickness direction Ya. The ground layer 131 is formed to surround the waveguide layer 113 in the width direction Yb and the depth direction Yc.

[0053] The ground layer 132 is disposed between the dielectric layers 100c and 100d. As shown in Fig. 1 and Fig. 4, the ground layer 132 has a through-hole 132k formed therethrough in the thickness direction Ya. The ground layer 132 is formed to surround the antenna layer 111 in the width direction Yb and the depth direction Yc.

[0054] 1 and 5, the ground layer 133 is a first ground conductor disposed between the dielectric layers 100b and 100c. A through-hole 133k is formed in the ground layer 133, penetrating in the thickness direction Ya. The ground layer 133 is formed to surround the connection flange layer 124 in the width direction Yb and the depth direction Yc.

[0055] 1 and 6, the ground layer 134 is a third ground conductor disposed between the dielectric layers 100a and 100b. The ground layer 134 has through-holes 134k formed therethrough in the thickness direction Ya. The ground layer 134 is formed to surround the connecting long plate layer 125 in the width direction Yb and the depth direction Yc.

[0056] 1 and 7, the ground layer 135 is a second ground conductor disposed on the other side of the dielectric layer 100a in the thickness direction Ya. The ground layer 135 has a through-hole 135k formed therethrough in the thickness direction Ya. The ground layer 135 is formed to surround the connection flange layer 126 in the width direction Yb and the depth direction Yc.

[0057] The plurality of ground vias 131a, 131b, 131c, and 131d are each formed to penetrate the dielectric layer 100d in the thickness direction Ya. One side of each of the plurality of ground vias 131a, 131b, 131c, and 131d in the thickness direction Ya is connected to the ground layer 131. The other side of each of the ground vias 131a, 131b, 131c, and 131d in the thickness direction Ya is connected to the ground layer 132.

[0058] The plurality of ground vias 131a and 131b are each arranged on the other side in the width direction Yb of the antenna layer 111. The plurality of ground vias 131c and 131d are each arranged on one side in the width direction Yb of the waveguide layer 113.

[0059] 4, the ground vias 131a are arranged on the other side of the ground vias 131b in the width direction Yb. The distance between two adjacent ground vias 131a among the ground vias 131a is set to, for example, λ / 4 or less, where λ is the wavelength of a carrier wave, which will be described later.

[0060] The plurality of ground vias 131b are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 131b among the plurality of ground vias 131b is set to, for example, λ / 4 or less.

[0061] The ground vias 131c are arranged on the other side of the ground vias 131d in the width direction Yb. The ground vias 131c are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 131b among the ground vias 131c is set to, for example, λ / 4 or less.

[0062] The plurality of ground vias 131d are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 131d among the plurality of ground vias 131d is set to, for example, λ / 4 or less.

[0063] The ground vias 132a, 132b, 132c, and 132d are each formed to penetrate the dielectric layer 100c in the thickness direction Ya. One side of each of the ground vias 132a, 132b, 132c, and 132d in the thickness direction Ya is connected to the ground layer 132. The other side of each of the ground vias 133a, 133b, 133c, and 133d in the thickness direction Ya is connected to the ground layer 133.

[0064] 5, the ground vias 132a and 132b are arranged on the other side in the width direction Yb of the power-feeding via 121. The ground vias 132a are arranged on the other side in the width direction Yb of the ground vias 132b.

[0065] The plurality of ground vias 132a are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 132a among the plurality of ground vias 132a is set to, for example, λ / 4 or less.

[0066] The plurality of ground vias 132b are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 132b among the plurality of ground vias 132b is set to, for example, λ / 4 or less.

[0067] In this embodiment, the plurality of ground vias 132a and the plurality of ground vias 132b each constitute a first electromagnetic shielding conductor made of a conductive material containing copper and extending in the thickness direction.

[0068] The ground vias 132c and 132d are each arranged on one side in the width direction Yb with respect to the power-feeding via 121. The ground vias 132c are arranged on the other side in the width direction Yb with respect to the ground vias 132d.

[0069] The plurality of ground vias 132c are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 132c among the plurality of ground vias 132c is set to, for example, λ / 4 or less.

[0070] The plurality of ground vias 132d are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 132d among the plurality of ground vias 132d is set to, for example, λ / 4 or less.

[0071] In this embodiment, the plurality of ground vias 132c and the plurality of ground vias 132d each constitute a second electromagnetic shielding conductor made of a conductive material containing copper and extending in the thickness direction.

[0072] 1, the plurality of ground vias 133a, 133b, and 133c are each formed to penetrate the dielectric layer 100b in the thickness direction Ya. One side of each of the plurality of ground vias 133a, 133b, and 133c in the thickness direction Ya is connected to the ground layer 133. The other side of each of the plurality of ground vias 133a, 133b, and 133c in the thickness direction Ya is connected to the ground layer 134.

[0073] 1 and 6, the ground vias 133a are arranged on the other side in the width direction Yb of the power feed via 122. The ground vias 133b and 133c are arranged on one side in the width direction Yb of the power feed via 122. The ground vias 133c are arranged on one side in the width direction Yb of the ground vias 133b.

[0074] The plurality of ground vias 133a are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 133a among the plurality of ground vias 133a is set to, for example, λ / 4 or less.

[0075] The plurality of ground vias 133b are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 133b among the plurality of ground vias 133b is set to, for example, λ / 4.

[0076] The plurality of ground vias 133c are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 133c among the plurality of ground vias 133c is set to, for example, λ / 4.

[0077] In this embodiment, the ground vias 133b and the ground vias 133c form a plurality of fourth ground conductors.

[0078] 1, the plurality of ground vias 134a, 134b, and 134c are each formed to penetrate the dielectric layer 100a in the thickness direction Ya. One side of each of the plurality of ground vias 134a, 134b, and 134c in the thickness direction Ya is connected to the ground layer 134. The other side of each of the plurality of ground vias 134a, 134b, and 134c in the thickness direction Ya is connected to the ground layer 135.

[0079] 1 and 7, the ground vias 134a are arranged on the other side in the width direction Yb of the power-feed via 123. The ground vias 134a of the present embodiment constitute a plurality of fifth ground conductors.

[0080] The ground vias 134b and 134c are arranged on one side in the width direction Yb of the power-feeding via 123. The ground vias 134b are arranged on the other side in the width direction Yb of the ground vias 134c.

[0081] The plurality of ground vias 134a are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 134a among the plurality of ground vias 134a is set to, for example, λ / 4 or less.

[0082] The plurality of ground vias 134b are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 134b among the plurality of ground vias 134b is set to, for example, λ / 4.

[0083] The plurality of ground vias 134c are arranged at equal intervals in the depth direction Yc. The interval between two adjacent ground vias 134c among the plurality of ground vias 134c is set to, for example, λ / 4.

[0084] 1, the electromagnetic shielding unit 130 includes ground electrodes 135a and 135b. The ground electrodes 135a and 135b are arranged on the other side in the thickness direction Ya of the ground layer 135. The ground electrodes 135a and 135b are each connected to the ground layer 135.

[0085] Here, the ground electrode 135a is arranged on the other side in the width direction Yb of the power feeding electrode 127. The ground electrode 135b is arranged on one side in the width direction Yb of the power feeding electrode 127. The ground electrodes 135a and 135b are electrically insulated from the power feeding electrode 127.

[0086] As will be described later, the ground electrodes 135a and 135b are connected to ground pads 203a and 203b of the integrated circuit 200, respectively. Therefore, the ground electrodes 135a and 135b, and therefore the electromagnetic shielding portion 130, are connected to the ground of the integrated circuit 200.

[0087] As shown in FIG. 1, the circuit board assembly 30 includes an integrated circuit 200, a molding compound layer 210, a molding compound through-via 220, insulating layers 230 and 240, a molding compound layer 245, solder ball pads 250a and 250b, and solder balls 260a and 260b.

[0088] As shown in FIG. 1, the circuit board assembly 30 includes a rewiring layer 270, external connection vias 280, 281, 282, 283, and 284, a power supply electrode 285, ground electrodes 286 and 287, and a connection layer 290.

[0089] The integrated circuit 200 is a communication integrated circuit that includes a semiconductor element 201 , a power supply pad 202 , ground pads 203 a and 203 b , a signal pad 204 , and a protective film 205 .

[0090] The semiconductor element 201 is formed in a thin film shape having a thickness in a thickness direction Ya and extending in a width direction Yb and a depth direction Yc. Specifically, the semiconductor element 201 includes a semiconductor wafer formed in a thin film shape.

[0091] Here, a circuit surface 201a is formed as a flat surface extending in the width direction Yb and the depth direction Yc on one side of the semiconductor wafer in the thickness direction Ya. A communication circuit is formed on the circuit surface 201a.

[0092] As shown in FIG. 8, the communication device 10 of this embodiment includes an arithmetic circuit 200a, an analog-to-digital conversion circuit 200b, a demodulation circuit 200c, a modulation circuit 200e, and a digital-to-analog conversion circuit 200d.

[0093] The arithmetic circuit 200a outputs transmission data. The digital-to-analog conversion circuit 200d converts the transmission data into an analog signal. The modulation circuit 200e modulates the output signal of the digital-to-analog conversion circuit 200d with a carrier wave and outputs the modulated signal to the power supply pad 202.

[0094] The demodulation circuit 200c demodulates the signal received from the power supply pad 202 using a carrier wave and outputs a demodulated signal. The analog-to-digital conversion circuit 200b converts the output signal of the demodulation circuit 200c into a digital signal. The arithmetic circuit 200a performs various processes based on the output signal of the analog-to-digital conversion circuit 200b.

[0095] The power supply pad 202 is a connection terminal formed on the circuit surface 201a of the semiconductor element 201. The power supply pad 202 constitutes a power supply point to which a transmission signal is output from the modulation circuit 200e and to which a received signal received by the antenna 110 is input.

[0096] In this embodiment, the frequency of the carrier wave used for modulation of the transmission signal is 24 GHz, or 76 to 81 GHz.

[0097] The ground pads 203a and 203b are connection terminals formed on the circuit surface 201a of the semiconductor element 201. The ground pads 203a and 203b are connected to the ground of the communication circuit of the integrated circuit 200.

[0098] The signal pads 204 are formed on the circuit surface 201a of the semiconductor element 201. The signal pads 204 are connection terminals through which various control signals output from the arithmetic circuit 200a are output to other electronic control devices, and through which various control signals given to the arithmetic circuit 200a from other electronic control devices are input.

[0099] In this embodiment, the power supply pad 202, the ground pads 203a and 203b, and the signal pad 204 are each made of a conductive material containing copper.

[0100] The protective film 205 is formed as a thin film that covers one side in the thickness direction Ya of the semiconductor element 201. The protective film 205 of this embodiment is made of an electrically insulating resin material.

[0101] The molded resin layer 210 is a second insulating substrate formed in a plate shape from an electrically insulating resin material such as epoxy resin, etc. Specifically, the molded resin layer 210 is formed in a plate shape having a thickness in a thickness direction Ya and extending in a width direction Yb and a depth direction Yc.

[0102] The molded resin layer 210 is formed to cover the semiconductor element 201 from the other side in the thickness direction Ya, and to cover the semiconductor element 201 and the protective film 205 from one side and the other side in the width direction Yb and one side and the other side in the depth direction Yc.

[0103] The mold resin through vias 220 are arranged so as to penetrate the mold resin layer 210 in the thickness direction Ya. The mold resin through vias 220 of this embodiment are made of a conductive material containing copper.

[0104] The insulating layer 230 is formed as a thin film so as to cover one side in the thickness direction Ya of the molded resin layer 210. The insulating layer 240 is formed as a thin film so as to cover the other side in the thickness direction Ya of the molded resin layer 210.

[0105] The insulating layers 230 and 240 are each formed in a plate shape having a thickness in the thickness direction Ya and extending in the width direction Yb and depth direction Yc. The insulating layers 230 and 240 are each formed of an electrically insulating resin material such as polyimide. The molded resin layer 245 is formed to cover the insulating layer 240 from the other side in the thickness direction Ya.

[0106] The solder ball pads 250a and 250b are each arranged to penetrate the insulating layer 230 in the thickness direction Ya. The solder ball pad 250b is connected to the other side of the mold resin through via 220 in the thickness direction Ya.

[0107] The solder balls 260a are arranged on the other side of the solder ball pads 250a in the thickness direction Ya. The solder ball pads 250a are connected to each other.

[0108] The solder ball 260b is arranged on the other side of the solder ball pad 250b in the thickness direction Ya. The solder ball pad 250b is connected to the solder ball pad 250b.

[0109] The external connection vias 280 are arranged to penetrate the insulating layer 230 in the thickness direction Ya. The other side of the external connection vias 280 in the thickness direction Ya is connected to the power supply pad 202 of the integrated circuit 200. One side of the external connection vias 280 in the thickness direction Ya is connected to the power supply electrode 285.

[0110] The external connection via 281 is arranged to penetrate the insulating layer 230 in the thickness direction Ya. The other side of the external connection via 281 in the thickness direction Ya is connected to the ground pad 203b of the integrated circuit 200. One side of the external connection via 281 in the thickness direction Ya is connected to the ground electrode 286.

[0111] The external connection vias 282 are arranged to penetrate the insulating layer 230 in the thickness direction Ya. The other side of the external connection vias 282 in the thickness direction Ya is connected to the ground pad 203a of the integrated circuit 200. One side of the external connection vias 282 in the thickness direction Ya is connected to the ground electrode 287.

[0112] The external connection vias 283 are arranged to penetrate the insulating layer 230 in the thickness direction Ya. The other side of the external connection vias 283 in the thickness direction Ya is connected to the signal pads 204 of the integrated circuit 200. One side of the external connection vias 283 in the thickness direction Ya is connected to one side of the rewiring layer 270 in the width direction Yb.

[0113] The rewiring layer 270 is formed to extend in the width direction Yb within the insulating layer 230. One side of the rewiring layer 270 in the width direction Yb is connected to the external connection via 283. The other side of the rewiring layer 270 in the width direction Yb is connected to one side of the mold resin through via 220 in the thickness direction Ya.

[0114] In this embodiment, the rewiring layer 270, the external connection vias 280, 281, 282, 283, and 284, the power supply electrode 285, and the ground electrodes 286 and 287 are each made of a conductive material containing copper.

[0115] Next, a method for manufacturing the communication device 10 of this embodiment will be described with reference to FIGS. 9 is a flowchart showing the manufacturing process of the communication device 10. FIGS. 10 to 43 are cross-sectional views for explaining the manufacturing process of the communication device 10.

[0116] First, the antenna substrate 20A is formed in the first process of step S100 in Fig. 9. As shown in Fig. 10, an adhesive is applied to the upper surface of a support wafer 300 to form a temporary adhesive layer 301.

[0117] 11, a photoresist 302 is formed on the upper side of the temporary adhesive layer 301. The photoresist 302 is formed in a frame shape that penetrates in the vertical direction. The photoresist 302 is used to form the waveguide layer 113 inside thereof. The vertical direction coincides with the thickness direction Ya.

[0118] Furthermore, copper plating is applied to the area of ​​the upper surface of the temporary adhesive layer 301 excluding the photoresist 302. The copper plating is formed into a thin film shape that spreads in the width direction Yb and the depth direction Yc using a conductive material containing copper.

[0119] 12, the ground layer 131 is formed on the upper surface of the temporary adhesive layer 301, outside the photoresist 302. On the other hand, the waveguide layer 113 is formed on the upper surface of the temporary adhesive layer 301, inside the photoresist 302.

[0120] In addition, the photoresist 302 is peeled off from one side of the temporary adhesive layer 301 in the thickness direction Ya.

[0121] 13, a photoresist 303 is formed in a film shape on the upper side of the ground layer 131 and the waveguide layer 113. In addition, a plurality of through holes 330, 331, 332, and 333 are formed in the photoresist 303 so as to penetrate in the vertical direction.

[0122] The plurality of through holes 330, 331, 332, and 333 are used to form the plurality of ground vias 131a, 131b, 131c, and 131d, respectively.

[0123] Here, the plurality of through holes 330 are lined up in the depth direction Yc. The plurality of through holes 331 are lined up in the depth direction Yc. The plurality of through holes 332 are lined up in the depth direction Yc. The plurality of through holes 333 are lined up in the depth direction Yc.

[0124] In addition, as shown in FIG. 13, the interiors of the plurality of through holes 330, the plurality of through holes 331, the plurality of through holes 332, and the plurality of through holes 333 are filled with copper plating.

[0125] As a result, a plurality of ground vias 131a, a plurality of ground vias 131b, a plurality of ground vias 131c, and a plurality of ground vias 131d are formed inside the plurality of through holes 330, the plurality of through holes 331, the plurality of through holes 332, and the plurality of through holes 333, respectively.

[0126] Next, as shown in FIG. 14, the ground layer 131 and the photoresist 303 arranged on one side of the waveguide layer 113 in the thickness direction Ya are peeled off.

[0127] Next, as shown in FIG. 15, an electrical insulating material is disposed so as to fill the ground layer 131, the waveguide layer 113, and the plurality of ground vias 131a, 131b, 131c, and 131d with the electrical insulating material.

[0128] Next, the upper end of each of the plurality of ground vias 131a, 131b, 131c, and 131d and the upper end of the electrical insulating material are shaped by cutting or the like.

[0129] Therefore, the upper ends of the ground vias 131a, 131b, 131c, and 131d and the upper end of the electrically insulating material become flat, resulting in the formation of the dielectric layer 100d with the upper sides of the ground vias 131a, 131b, 131c, and 131d exposed from the dielectric layer 100d, as shown in FIG.

[0130] Next, as in the case of the above-mentioned ground layer 131 and waveguide layer 113, a frame-shaped photoresist 304 is formed on one side of the dielectric layer 100d in the thickness direction, and copper plating is then formed to form the antenna layer 111 and ground layer 132, as shown in Figures 16 and 17.

[0131] Fig. 16 shows a state in which photoresist 304, antenna layer 111, and ground layer 132 are formed on the upper side of dielectric layer 100d. Fig. 17 shows a state in which photoresist 304 is removed from the upper side of dielectric layer 100d, and antenna layer 111 and ground layer 132 are formed.

[0132] Next, as in the case of the above-mentioned plurality of ground vias 131a to 131d, photoresist 305 is formed and copper plating is performed to form the plurality of ground vias 132a, 132b, 132c, 132d and power supply via 121, as shown in Figures 18 and 19.

[0133] Next, as shown in FIG. 20, an electrical insulating material is arranged so as to fill the antenna layer 111, the ground layer 132, the power feed via 121, and the plurality of ground vias 132a, 132b, 132c, and 132d with the electrical insulating material.

[0134] Next, the upper ends of the power feed via 121 and the plurality of ground vias 132a, 132b, 132c, and 132d and the upper end of the electrical insulating material are shaped by cutting, etc. As a result, the upper ends (i.e., the other side in the thickness direction Ya) of the power feed via 121 and the plurality of ground vias 132a, 132b, 132c, and 132d are exposed.

[0135] In this state, the upper ends of the power feed via 121 and the ground vias 132a, 132b, 132c, and 132d and the upper end of the electrical insulating material are flat, so that the dielectric layer 100c is formed from the electrical insulating material while the power feed via 121 and the ground vias 132a, 132b, 132c, and 132d are exposed on the other side in the thickness direction Ya.

[0136] At this time, the positions of the power feed via 121 and the plurality of ground vias 132a, 132b, 132c, and 132d in the thickness direction Ya coincide with the positions of the dielectric layer 100c in the thickness direction Ya.

[0137] Next, as shown in FIG. 22, a frame-shaped photoresist 306 is formed on the upper side of the dielectric layer 100c, and copper plating is then performed to form the connection flange layer 124 and the ground layer 133.

[0138] Fig. 21 shows a state in which photoresist 306, connection flange layer 124, and ground layer 133 are formed on the upper side of dielectric layer 100c. Fig. 22 shows a state in which photoresist 306 is removed from the upper side of dielectric layer 100c, and connection flange layer 124 and ground layer 133 are formed.

[0139] Next, as shown in Figures 23 and 24, similar to the above-mentioned plurality of ground vias 131a to 131d and power supply via 121, copper plating is formed with photoresist 307 formed to form a plurality of ground vias 133a, 133b, 133c and power supply via 122.

[0140] Fig. 23 shows a state in which a plurality of ground vias 133a, 133b, 133c and power feed via 122 are formed inside a plurality of through holes 305a, 305b, 305c, 305d in photoresist 307. Fig. 24 shows a state in which photoresist 307 has been peeled off to expose ground vias 133a, 133b, 133c and power feed via 122.

[0141] Next, as shown in FIG. 25, an electrical insulating material is arranged so as to fill the ground layer 133, the connection flange layer 124, the plurality of ground vias 133a, 133b, 133c, and the power supply via 122 with the electrical insulating material.

[0142] Next, the upper ends of the ground vias 133a, 133b, and 133c, the power feed via 122, and the upper end of the electrically insulating material are shaped by cutting or the like, so that the upper ends of the ground vias 133a, 133b, and 133c, and the power feed via 122 (i.e., the other side in the thickness direction Ya) are exposed.

[0143] In this state, the plurality of ground vias 133a, 133b, and 133c and the power supply via 122 The upper end of the insulating material and the upper end of the ground vias 133a, 133b, and 133c and the power feed via 122 are formed flat, so that the dielectric layer 100b is formed from the insulating material while the ground vias 133a, 133b, and 133c and the power feed via 122 are exposed on the other side in the thickness direction Ya.

[0144] At this time, the positions of the ground vias 133a, 133b, 133c and the power feed via 122 in the thickness direction Ya coincide with the positions of the dielectric layer 100b in the thickness direction Ya.

[0145] Next, as shown in FIGS. 26 and 27, the connecting long plate layer 125, the ground layer 134, the plurality of ground vias 134a, 134b, 134c, and the power supply via 123 are formed by copper plating.

[0146] Fig. 26 shows a state in which a connecting long board layer 125 and a ground layer 134 are formed on the upper side of the dielectric layer 100b. Fig. 27 shows a state in which a plurality of ground vias 134a, 134b, 134c, and a power supply via 123 are formed on the upper side of the ground layer 134 and the connecting long board layer 125.

[0147] Next, as shown in FIG. 28, an electrical insulating material is arranged so as to fill the ground layer 134, the connecting long plate layer 125, the plurality of ground vias 134a, 134b, 134c, and the power supply via 123 with the electrical insulating material.

[0148] Next, the upper end portions of the power feed via 123 and the plurality of ground vias 134a, 134b, and 134c and the upper end portion of the electrically insulating material are shaped by cutting, etc. As a result, the upper end portions (i.e., the other side in the thickness direction Ya) of the power feed via 123 and the plurality of ground vias 134a, 134b, and 134c are exposed.

[0149] In this state, the upper ends of the power feed via 123 and the plurality of ground vias 134a, 134b, and 134c and the upper end of the electrical insulating material become flat, so that the dielectric layer 100a is formed from the electrical insulating material while the power feed via 123 and the plurality of ground vias 134a, 134b, and 134c are exposed on the other side in the thickness direction Ya.

[0150] At this time, the positions of the power supply via 123 and the plurality of ground vias 134a, 134b, and 134c in the thickness direction Ya coincide with the positions of the dielectric layer 100c in the thickness direction Ya.

[0151] Next, as shown in FIGS. 28 and 29, the dielectric layer 100a, the ground layer 135, the connecting flange layer 126, the ground electrodes 135a and 135b, the power supply electrode 127, and the insulating layer 140 are each formed by copper plating.

[0152] Fig. 28 shows a state in which a dielectric layer 100a is formed on the upper side of the connecting long plate layer 125 and the ground layer 134. Fig. 29 shows a state in which a ground layer 135, a connecting flange layer 126, ground electrodes 135a and 135b, and a power supply electrode 127 are formed on the upper side of the dielectric layer 100a.

[0153] Next, as shown in FIG. 30, the ground electrodes 135a and 135b and the power supply electrode 127 are shaped to form the insulating layer 140, the ground electrodes 286a and 287a, the power supply electrode 285a, and the connection layer 290a.

[0154] At this time, the insulating layer 140 is formed in a film shape so as to cover from above the ground layer 135 and the connection flange layer 126. The ground electrode 286a is formed above the ground electrode 135b. The ground electrode 287a is formed above the ground electrode 135a. The power feeding electrode 285a is formed above the power feeding electrode 127. The connection layer 290a is formed in a film shape so as to cover the insulating layer 140 from above.

[0155] As a result, the ground electrodes 286a and 135b are connected, the ground electrodes 287a and 135a are connected, and the power supply electrodes 285a and 127 are connected. In this state, the ground electrodes 286a and 287a, the power supply electrode 285a, and the connection layer 290a are buried in the connection layer 290a.

[0156] The connection layer 290a of this embodiment is made of, for example, a thermosetting resin such as a Non-Conductive Film (NCF). As a result of the above, the antenna substrate 20A is formed on the support wafer 300 and the upper side of the temporary adhesive layer 301.

[0157] Here, the antenna substrate 20A is composed of dielectric layers 100a, 100b, 100c, and 100d, an antenna 110, a feed line 120, an electromagnetic shielding portion 130, and an insulating layer 140.

[0158] In this embodiment, the antenna substrate 20A includes the antenna 110 and is an unfinished component (i.e., a workpiece) in the manufacturing process of the communication device 10. On the other hand, the antenna substrate assembly 20 is a region of the communication device 10 that includes the antenna 110, etc., in the completed manufacturing process.

[0159] Next, in the second process of step S110 in Fig. 9, the circuit board 30A is formed. First, as shown in Fig. 31, an adhesive is applied to the upper surface of the support wafer 400 to form a temporary adhesive layer 401. Then, as shown in Fig. 32, a plating seed 402 is formed on the upper side of the temporary adhesive layer 401.

[0160] Next, as shown in Figures 32, 33, and 34, in the same manner as described above, a photoresist 403 is formed on the upper surface of the plating seed 402, and copper plating is applied within the through hole 403a of the photoresist 403 to form a molded resin through via 220.

[0161] Next, as shown in FIG. 35, with the integrated circuit 200 placed on the temporary adhesive layer 401, a mold resin layer 210 is formed so as to cover the integrated circuit 200 from above.

[0162] 36, with the integrated circuit 200 placed on the temporary adhesive layer 401, a mold resin layer 210 is formed to cover the integrated circuit 200 from above. Next, as shown in FIG. 37, an insulating layer 240 and solder ball pads 250a and 25b are formed.

[0163] Next, as shown in FIG. 37, a support wafer 404 is formed below the mold resin layer 245.

[0164] Next, as shown in FIG. 38, the temporary adhesive layer 401 and the support wafer 400 are peeled off from the upper side of the mold resin layer 210.

[0165] Next, as shown in FIG. 39, on the upper side of the mold resin layer 210, the rewiring layer 270, the power supply electrode 285b, the ground electrodes 286b and 287b, the external connection vias 283 and 284, and the insulating layer 230 are formed.

[0166] In this case, the power supply electrode 285b is formed above the power supply pad 202. The ground electrode 286b is formed above the ground pad 203b. The ground electrode 287b is formed above the ground pad 203a.

[0167] Here, the power supply electrode 285b is connected to the power supply pad 202, the ground electrode 286b is connected to the ground pad 203b, and the ground electrode 287b is connected to the ground pad 203a. The insulating layer 230 is formed in a film shape along the upper surface of the molded resin layer 210.

[0168] 40, a connection layer 290b is formed on the upper sides of the power supply electrode 127, the ground electrodes 135a and 135b, the redistribution layer 270, the power supply electrode 285, the ground electrodes 286 and 287, and the external connection vias 283 and 284. The connection layer 290b is formed in the form of a film so as to cover the redistribution layer 270 and the insulating layer 230 from above. The power supply electrode 285b and the ground electrodes 286b and 287b are buried in the connection layer 290b.

[0169] The connection layer 290b of this embodiment is made of, for example, a thermosetting resin such as a non-conductive film.

[0170] As a result of the above, the circuit board 30A is formed on the upper side of the support wafer 404.

[0171] The circuit board 30A is composed of an integrated circuit 200, a mold resin layer 210, mold resin through-vias 220, insulating layers 230 and 240, solder ball pads 250a and 250b, and solder balls 260a and 260b.

[0172] In this embodiment, the circuit board 30A is an area including the integrated circuit 200, and is an unfinished component (i.e., work) in the manufacturing process of the communication device 10. On the other hand, the circuit board assembly 30 is an area including the integrated circuit 200 in the communication device 10 in a completed state in the manufacturing process.

[0173] Next, as shown in Fig. 41, the circuit board 30A is placed above the antenna board 20A. Then, the positions of the antenna board 20A and the circuit board 30A are adjusted, and the connection layers 290a and 290b are connected by thermocompression bonding to form the connection layer 290.

[0174] At this time, the power supply electrodes 285a, 285b, the ground electrodes 286a, 286b, 287a, 287b, etc. are heated in a formic acid atmosphere until the ambient temperature reaches, for example, 250° C. In addition, the power supply electrodes 285a, 285b are thermocompression-bonded, the ground electrodes 286a, 286b are thermocompression-bonded, and the ground electrodes 287a, 287b are further thermocompression-bonded.

[0175] At this time, the oxide films of the power supply electrodes 285a, 285b are reduced by the formic acid, and the power supply electrodes 285a, 285b are diffusion-bonded to form the power supply electrode 285. As a result, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected via the external connection via 280 and the power supply electrodes 127, 285. Therefore, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected by thermocompression bonding with the power supply electrode 285.

[0176] The power supply electrode 285 of this embodiment constitutes a conductive member for connecting the power supply pad 202 and the connection flange layer 126 of the power supply line 120. The conductive member is made of a conductive material containing copper.

[0177] At this time, the oxide films of the ground electrodes 287a and 287b are reduced by the formic acid, and the ground electrodes 287a and 287b are diffusion-bonded to form the ground electrode 287.

[0178] Therefore, the ground pad 203a and the ground layer 135 are connected through the external connection via 282 and the ground electrodes 287 and 135a. Therefore, the ground pad 203a and the ground layer 135 are connected by thermocompression bonding.

[0179] Similarly, with the oxide films of the ground electrodes 286a and 286b reduced by formic acid, the ground electrodes 286a and 286b are diffusion-bonded to form the ground electrode 286. As a result, the ground pad 203b and the ground layer 135 are connected via the external connection via 281 and the ground electrodes 286 and 135b. Therefore, the ground pad 203b and the ground layer 135 are connected by thermocompression bonding.

[0180] 42 and 43, the support wafer 404 is peeled off from the integrated circuit 200, and flux 410 is transferred onto the upper side of each of the plurality of solder ball pads 250 to form the plurality of solder ball pads 250. Thereafter, the support wafer 300 and temporary adhesive layer 301 are peeled off from the antenna substrate 20A. With the above steps, the communication device 10 is completed.

[0181] Next, the operation of the communication device 10 of this embodiment will be described.

[0182] First, the arithmetic circuit 200a outputs a transmission data signal to the digital-analog conversion circuit 200d. Then, the digital-analog conversion circuit 200d converts the transmission data signal into an analog signal. The modulation circuit 200e modulates the output signal of the digital-analog conversion circuit 200d using a carrier wave and outputs the modulated signal to the antenna 110 via the feeder line 120. Accordingly, the modulated signal is output from the antenna 110 via electromagnetic waves.

[0183] That is, an electromagnetic wave representing a modulated signal is propagated from the antenna 110. The electromagnetic wave propagated from the antenna 110 is guided by the waveguiding layer 113 and propagates mainly to one side in the thickness direction Ya.

[0184] The received signal is then transmitted via electromagnetic waves and received by the antenna 110. The antenna 110 then outputs the received signal to the demodulation circuit 200c via the feeder line 120 and the like.

[0185] The demodulation circuit 200c demodulates the received signal and outputs the demodulated signal to the analog-to-digital conversion circuit 200b. The analog-to-digital conversion circuit 200b converts the demodulated signal into an analog-to-digital signal. The arithmetic circuit 200a then performs various processes based on the output signal of the analog-to-digital conversion circuit 200b.

[0186] Here, electromagnetic waves based on the modulated signal or the received signal are generated from the power supply vias 121, 122, and 123, the connection flange layers 124 and 126, the connection long plate layer 125, the power supply electrode 127, and the like in the power supply line 120.

[0187] The electromagnetic shielding portion 130 is made of a conductive material containing copper and is connected to the ground of the integrated circuit 200. In this case, the electromagnetic shielding portion 130 prevents the electromagnetic waves generated from the power supply line 120 from propagating outside the area 130A.

[0188] Specifically, the ground layers 132 and 131 prevent electromagnetic waves generated from the feed line 120 from propagating to one side in the thickness direction Ya. The ground layers 133 and 134 prevent electromagnetic waves generated from the feed line 120 from propagating to one side or the other in the width direction Yb and one side or the other in the depth direction Yc. The ground layer 135 prevents electromagnetic waves generated from the feed line 120 from propagating to the other side in the thickness direction Ya.

[0189] The multiple ground vias 131a, 131b, 132a, 132b, 133a, and 134a prevent electromagnetic waves generated from the feed line 120 from propagating to the other side in the width direction Yb. The multiple ground vias 131c, 131d, 132c, 132d, 133b, 133c, 134b, and 134c prevent electromagnetic waves generated from the feed line 120 from propagating to one side in the width direction Yb.

[0190] The electromagnetic shielding portion 130 prevents electromagnetic waves propagating from outside the area 130A toward the feeder line 120 from being received by the feeder line 120.

[0191] Specifically, the ground layers 132 and 131 prevent electromagnetic waves propagating from one side in the thickness direction Ya relative to the ground layers 132 and 131 from being received by the feeder line 120. The ground layers 133 and 134 prevent electromagnetic waves propagating from one side and the other in the width direction Yb relative to the ground layers 133 and 134 and electromagnetic waves propagating from one side and the other in the depth direction Yc from being received by the feeder line 120.

[0192] The ground layer 135 prevents electromagnetic waves propagating from the other side of the ground layer 135 in the thickness direction Ya from being received by the feed line 120.

[0193] The plurality of ground vias 131a, 131b, 132a, 132b, 133a, and 134a prevent the feeder line 120 from receiving electromagnetic waves propagating from the other side of the plurality of ground vias 131a, 132a, 133a, and 134a in the width direction Yb.

[0194] The plurality of ground vias 131c, 131d, 132c, 132d, 133b, 133c, 134b, and 134c prevent the feed line 120 from receiving electromagnetic waves propagating from one side in the width direction Yb relative to the plurality of ground vias 131d, 132d, 133c, and 134c.

[0195] The region 130A in this embodiment is a region sandwiched between the ground vias 131a, 132a, 133a, and 134a and the ground vias 131d, 132d, 133c, and 134c. The region 130A is also a region sandwiched between the ground layers 131 and 135.

[0196] According to the present embodiment described above, the manufacturing method of the communication device 10 includes forming the antenna substrate 20A and forming the circuit substrate 30A separately from the antenna substrate 20A. In addition, the manufacturing method of the communication device 10 of the present embodiment includes connecting the antenna substrate 20A and the circuit substrate 30A with the power supply pad 202 and the power supply line 120 connected to each other.

[0197] The antenna substrate 20A includes dielectric layers 100a, 100b, 100c, and 100d formed into plates from an electrically insulating material, and an antenna 110 mounted on the dielectric layers 100a, 100b, 100c, and 100d. The antenna substrate 20A is provided with a feeder line 120 mounted on the dielectric layers 100a, 100b, 100c, and 100d and connected to the antenna 110.

[0198] The circuit board 30A includes a molded resin layer 210 formed into a plate shape from an electrically insulating material, and an integrated circuit 200 mounted on the molded resin layer 210 and having a power supply pad 202 for connecting the antenna 110 via a power supply line 120. The integrated circuit 200 is a communication integrated circuit that transmits a transmission signal from the antenna 110 or receives a reception signal via the antenna 110.

[0199] As described above, the process of forming the circuit board 30A and the process of forming the antenna board 20A are carried out separately, which improves yield compared to when the circuit board 30A and the antenna board 20A are formed consecutively.

[0200] In this embodiment configured as above, the following effects (a), (b), (c), (d), (e), (f), (g), (h), (i), and (j) can be obtained.

[0201] (a) In this embodiment, the power supply pad 202 of the integrated circuit 200 and the power supply line 120 are each made of a conductive material containing copper. The process of connecting the power supply pad 202 and the power supply line 120 is performed by thermocompression bonding using a power supply electrode 285 made of a conductive material containing copper. This includes a step of connecting the power supply pad 202 and the power supply line 120.

[0202] Therefore, the electrical resistance between the power supply pad 202 and the power supply line 120 can be reduced compared to when the power supply pad 202 and the power supply line 120 are connected by a conductive material other than copper (for example, a solder material).

[0203] (b) In this embodiment, the process of forming the antenna substrate 20A includes a process of forming an electromagnetic shielding portion 130, which is connected to ground and is formed so as to sandwich the power supply line 120 from one side and the other side in the width direction Yb, using a conductive material containing copper.

[0204] The electromagnetic shielding portion 130 prevents electromagnetic waves generated from the power feed line 120 from leaking outside the area 130A sandwiched between the electromagnetic shielding portions 130. The electromagnetic shielding portion 130 is also provided to prevent electromagnetic waves arriving from outside the area 130A from propagating to the power feed line 120.

[0205] Therefore, it is possible to prevent electromagnetic waves generated from the feed line 120 from propagating in directions other than one side in the thickness direction Ya with respect to the antenna 110. Alternatively, it is possible to prevent the feed line 120 from receiving electromagnetic waves arriving from directions other than one side in the thickness direction Ya with respect to the antenna 110.

[0206] (c) In this embodiment, the step of forming the feeder line 120 includes the step of forming the connecting elongated plate layer 125 formed so as to extend in the depth direction Yc.

[0207] The process of forming the electromagnetic shielding portion 130 includes a process of forming a ground layer 133 that is arranged on one side of the connecting long plate layer 125 in the thickness direction Ya and is formed in the shape of a film extending in the width direction Yb and the depth direction Yc.

[0208] The process of forming the electromagnetic shielding portion 130 includes a process of forming a ground layer 135 that is arranged on the other side of the connecting long plate layer 125 in the thickness direction Ya and is formed in the shape of a film extending in the width direction Yb and the depth direction Yc.

[0209] Here, as described above, the electromagnetic shielding portion 130 includes the ground layer 133 which is disposed on one side of the connecting long plate layer 125 in the thickness direction Ya and is formed in the shape of a film extending in the width direction Yb and the depth direction Yc.

[0210] Therefore, the ground layer 133 can prevent electromagnetic waves generated from the connection long board layer 125 from propagating to one side in the thickness direction Ya with respect to the ground layer 133. Alternatively, the ground layer 133 can prevent electromagnetic waves propagating from one side in the thickness direction Ya with respect to the ground layer 133 to the other side in the thickness direction Ya from propagating to the connection long board layer 125.

[0211] Here, as described above, the electromagnetic shielding portion 130 is arranged on the other side of the connecting long plate layer 125 in the thickness direction Ya, and includes the ground layer 135 formed in the shape of a film extending in the width direction Yb and the depth direction Yc.

[0212] Therefore, the ground layer 135 can prevent the electromagnetic waves generated from the connection long board layer 125 from propagating to the other side in the thickness direction Ya. Alternatively, the ground layer 135 can prevent the electromagnetic waves propagating from the other side to one side in the thickness direction Ya relative to the ground layer 135 from propagating to the connection long board layer 125.

[0213] (d) In this embodiment, the step of forming the electromagnetic shielding portion 130 includes the step of forming the ground layer 134 that is formed so as to surround the connecting long plate layer 125 in the width direction Yb and the depth direction Yc.

[0214] Therefore, the ground layer 134 can prevent electromagnetic waves generated from the connection long board layer 125 from propagating in the width direction Yb and the depth direction Yc. Alternatively, the ground layer 134 can prevent electromagnetic waves propagating from the width direction Yb or the depth direction Yc relative to the connection long board layer 125 from propagating to the connection long board layer 125.

[0215] (e) In this embodiment, the process of forming the power supply line 120 includes a process of forming a power supply via 122 that is arranged on one side of the connection long plate layer 125 in the thickness direction Ya and is connected to the connection long plate layer 125.

[0216] The step of forming the electromagnetic shielding portion 130 includes forming a plurality of ground vias 133b and 133c that are arranged on one side of the power-feeding via 122 in the width direction Yb and aligned in the depth direction Yc.

[0217] The step of forming the electromagnetic shielding portion 130 includes a step of forming a plurality of ground vias 134a that are arranged on the other side of the power feed via 122 in the width direction Yb and aligned in the depth direction Yc. Therefore, the plurality of ground vias 133a, 133b, and 133c can prevent electromagnetic waves generated from the power feed via 122 from propagating outside the region 130A. The region 130A is formed between the plurality of ground vias 134a and the plurality of ground vias 133b and 133c.

[0218] Furthermore, the plurality of ground vias 133a and the plurality of ground vias 133b and 133c can prevent electromagnetic waves propagating from the outside of the region 130A to the inside of the region 130A from propagating to the power feed via 122.

[0219] (f) In this embodiment, the step of forming the electromagnetic shielding portion 130 includes a step of forming the plurality of ground vias 133a, 133b, and 133c so as to penetrate the dielectric layer 100b in the thickness direction Ya. This allows the dielectric layer 100b to improve the electrical insulation between the power feed via 122 and the plurality of ground vias 133a, 133b, and 133c.

[0220] (g) In this embodiment, the process of forming the power supply line 120 includes a process of forming the power supply via 122 so that it is positioned on one side of the connection long plate layer 125 in the thickness direction Ya and has a cylindrical shape with an axis C1 extending in the thickness direction Ya as its center line.

[0221] The process of forming the power supply line 120 includes a process of forming the connecting flange layer 124 so that it is arranged on one side of the power supply via 122 in the thickness direction Ya, is connected to the power supply via 122, and has a disk shape with the axis C1 as its center line.

[0222] The step of forming the power feed line 120 includes a step of forming the power feed via 121 so that the power feed via 121 is disposed on one side of the connection flange layer 124 in the thickness direction Ya, is connected to the connection flange layer 124, and has a cylindrical shape with the axis C1 as its center line. The connection flange layer 124 is formed so as to protrude radially outward from the power feed vias 121, 122 with the axis C1 as its center line.

[0223] Therefore, even if the power supply vias 121 and 122 are misaligned in a direction perpendicular to the thickness direction Ya, the power supply vias 121 and 122 can be easily connected by the connection flange layer 124.

[0224] (h) In this embodiment, the process of forming the antenna substrate 20A includes a process of forming the power supply via 121 and the plurality of ground vias 132a, 132b, 132c, and 132d, and a process of forming the dielectric layer 100c as the first insulating substrate using an electrically insulating material.

[0225] In this step, an electrically insulating material is disposed so as to fill the power feed via 121 and the ground vias 132a, 132b, 132c, and 132d with the electrically insulating material, and the other end portions of the power feed via 121 and the ground vias 132a, 132b, 132c, and 132d in the thickness direction Ya are left exposed.

[0226] Furthermore, this process includes forming the dielectric layer 100c by forming the other end of the electrically insulating material in the thickness direction Ya and the other sides of the power supply via 121 and the multiple ground vias 132a, 132b, 132c, and 132d in the thickness direction Ya into a flat shape. The process of forming the antenna substrate 20A involves forming a connection flange layer 124 as a second power supply line that is arranged on the other side of the dielectric layer 100c in the thickness direction Ya, connected to the power supply via 121, and formed in the shape of a film extending in the width direction Yb and the depth direction Yc with the axis C1 as the center line. The step of forming the antenna substrate 20A includes the step of forming a ground layer 133 as a third electromagnetic shielding conductor, which is disposed on the other side of the dielectric layer 100c in the thickness direction Ya and connected to the plurality of ground vias 132a, 132b, 132c, and 132d. The ground layer 133 is formed in the shape of a film that extends in the width direction Yb and the depth direction Yc so as to surround the connection flange layer 124.

[0227] In the case of a conventional manufacturing method in which the upper ends of the via and the dielectric layer are not formed flat, a step (i.e., an uneven portion) is formed in the thickness direction at the upper end of the via (i.e., the other end in the thickness direction). For this reason, the conventional manufacturing method is designed so that two vias do not overlap one another. In contrast, in this embodiment, two vias (i.e., power supply vias 121 and 122) form a high-frequency circuit that passes high-frequency current. In this case, if there is a large step (i.e., an uneven portion) between the two vias, there is a problem that unnecessary electromagnetic noise is radiated, resulting in a decrease in antenna performance.

[0228] Therefore, in this embodiment, the other side of the power supply via 121, the other side of each of the multiple ground vias 132a, 132b, 132c, and 132d in the thickness direction Ya, and the other side of the dielectric layer 100c in the thickness direction Ya can be formed flat in the same process. Therefore, when viewed from the thickness direction Ya, the power feed vias 121 and 122 can be formed so that the axis of the power feed via 122 overlaps the axis of the power feed via 121. Therefore, the power feed vias 121 and 122 can be formed in a state where they are appropriately connected via the connection flange layer 124. This prevents steps from occurring between the power feed vias 122 and 121. This prevents radiation of unnecessary electromagnetic noise, thereby improving antenna performance.

[0229] Furthermore, variations in the thickness of the dielectric layer 100c adversely affect the antenna gain. In contrast, in this embodiment, as described above, the thickness of the dielectric layer 100c can be easily controlled by forming the electrical insulating layer and then processing it into a flat shape. This makes it easy to suppress variations in the thickness of the dielectric layer 100c. Therefore, it is easy to prevent variations in the thickness of the dielectric layer 100c from adversely affecting the antenna gain.

[0230] Furthermore, in this embodiment, as described above, the other side in the thickness direction Ya of each of the power feed via 121 and the plurality of ground vias 132a, 132b, 132c, and 132d and the other side in the thickness direction Ya of the dielectric layer 100c can be formed flat. This allows the connection flange layer 124 and the ground layer 133 to be formed flat along the other side in the thickness direction Ya of the dielectric layer 100c. This makes it possible to prevent the connection flange layer 124 and the ground layer 133 from adversely affecting the antenna performance. The manufacturing method described above makes it possible to manufacture an antenna with excellent performance. The ground vias 132a, 132b, 132c, and 132d prevent electromagnetic waves generated from the power feed via 121 from leaking outside the region 130A. The ground vias 132a, 132b, 132c, and 132d prevent electromagnetic waves arriving from outside the region 130A from propagating to the power feed via 121. The region 130A is sandwiched between the ground vias 132a, 132b and the ground vias 132c and 132d.

[0231] The ground layer 133 suppresses the propagation of electromagnetic waves in the width direction Yb and the depth direction Yc from the connection flange layer 124. The ground layer 133 suppresses the reception by the connection flange layer 124 of electromagnetic waves propagating relative to the ground layer 133 in the width direction Yb and the depth direction Yc.

[0232] (i) In this embodiment, the process of forming the antenna substrate 20A includes forming a power supply via 122 as a first power supply line, and a plurality of ground vias 133b, 133c, 133a arranged on one side and the other side of the power supply via 122 in the first intersecting direction.

[0233] The power feed via 122 is a first power feed line formed of a conductive material containing copper and has a columnar shape with an axis C1 extending in the thickness direction Ya as its center line. The ground vias 133b and 133c are first electromagnetic shielding conductors formed of a conductive material containing copper and extending in the thickness direction Ya. The ground vias 133a are second electromagnetic shielding conductors formed of a conductive material containing copper and extending in the thickness direction Ya.

[0234] In the process of forming the antenna substrate 20A, an electrical insulating material is disposed so as to fill the power feed via 122 and the plurality of ground vias 133a, 133b, and 133c with the electrical insulating material.

[0235] Furthermore, in this step, the other end portions of the power feed via 122 and the plurality of ground vias 133a, 133b, and 133c in the thickness direction Ya are exposed.

[0236] This process includes forming the other end of the electrically insulating material in the thickness direction Ya and the other sides of the power supply via 122 and the multiple ground vias 133a, 133b, and 133c in the thickness direction into a flat shape, thereby forming a dielectric layer 100b as a first insulating substrate.

[0237] The process of forming the antenna substrate 20A includes forming a connecting long plate layer 125 as a second power supply line that is arranged on the other side of the dielectric layer 100b in the thickness direction Ya, connected to the power supply via 122, and further extending in the depth direction Yc.

[0238] The step of forming the antenna substrate 20A includes forming a ground layer 134 as a third electromagnetic shielding conductor, which is disposed on the other side of the dielectric layer 100b in the thickness direction Ya and connected to the plurality of ground vias 133a, 133b, and 133c. The ground layer 134 is formed in the shape of a film that extends in the width direction Yb and the depth direction Yc so as to surround the connecting long plate layer 125.

[0239] As a result, the other side of each of the power feed via 122 and the ground vias 133a, 133b, and 133c in the thickness direction Ya and the other end of the dielectric layer 100b in the thickness direction Ya can be formed flat, thereby preventing variations in the thickness of the dielectric layer 100b from adversely affecting the antenna gain. Furthermore, in the same process, the connection elongated plate layer 125 and the ground layer 134 can be formed in a planar shape along the other side of the dielectric layer 100b in the thickness direction Ya. This makes it possible to prevent the connection elongated plate layer 125 and the ground layer 134 from adversely affecting the antenna performance. In addition, since the power feed via 123 can be easily formed to extend in the thickness direction Ya, the power feed vias 123 and 122 can be easily connected via the connection elongated plate layer 125.

[0240] The ground vias 133a, 133b, and 133c prevent electromagnetic waves generated from the power feed via 122 from leaking outside the region 130A. The ground vias 133a, 133b, and 133c prevent electromagnetic waves arriving from outside the region 130A from propagating to the power feed via 122. The region 130A is sandwiched between the ground vias 133a and the ground vias 133b and 133c.

[0241] The ground layer 134 suppresses the propagation of electromagnetic waves in the width direction Yb and the depth direction Yc from the connecting long board layer 125. The ground layer 134 suppresses the reception by the connecting long board layer 125 of electromagnetic waves propagating from the width direction Yb and the depth direction Yc relative to the ground layer 134.

[0242] (j) In this embodiment, the step of forming the antenna substrate 20A includes the step of forming ground vias 131c and 131d as first electromagnetic shielding conductors and ground vias 131a and 131b as second electromagnetic shielding conductors. The ground vias 131c and 131d and the ground vias 131a and 131b are aligned in the width direction Yb and are formed of a conductive material containing copper so as to extend in the thickness direction.

[0243] The process of forming the antenna substrate 20A includes a process of arranging an electrically insulating material so as to fill the ground vias 131a, 131b, 131c, and 131d with the electrically insulating material, with the other end of each of the ground vias 131a, 131b, 131c, and 131d in the thickness direction Ya being exposed.

[0244] In this process, the other side of each of the ground vias 131a, 131b, 131c, and 131d in the thickness direction Ya and the other end of the electrically insulating material in the thickness direction Ya are formed flat, thereby forming a dielectric layer 100d as a first insulating substrate using the electrically insulating material.

[0245] The step of forming the antenna substrate 20A includes a step of forming an antenna layer 111 as a film-like antenna disposed on the other side of the dielectric layer 100d in the thickness direction Ya and extending in the width direction Yb and depth direction Yc. The antenna layer 111 is provided on the other side of the ground vias 131c and 131d in the width direction Yb and on one side of the ground vias 131a and 131b in the width direction Yb.

[0246] The step of forming the antenna substrate 20A includes forming a ground layer 132 that is disposed on the other side of the dielectric layer 100d in the thickness direction Ya and is connected to the ground vias 131a, 131b, 131c, and 131d. The ground layer 132 is a third electromagnetic shielding conductor that is formed in the shape of a film that extends in the width direction Yb and the depth direction Yc so as to surround the antenna layer 111.

[0247] As a result, the other thickness-wise sides of the ground vias 131a, 131b, 131c, and 131d and the other thickness-wise end of the dielectric layer 100d can be formed flat, thereby preventing variations in the thickness of the dielectric layer 100d from adversely affecting the antenna gain. Furthermore, in the same process, the ground layer 132 and the antenna layer 111 can be formed in a planar shape along the other side of the dielectric layer 100d in the thickness direction Ya. This makes it possible to prevent the ground layer 132 and the antenna layer 111 from adversely affecting the antenna performance. In addition, since the power feed via 121 can be easily formed to extend in the thickness direction Ya, the power feed via 121 can be easily formed in a state where it is connected to the antenna layer 111.

[0248] The ground vias 131c and 131d prevent electromagnetic waves generated from the antenna layer 111 from propagating to one side in the width direction Yb relative to the ground vias 131c and 131d. The ground vias 131c and 131d prevent electromagnetic waves propagating from one side in the width direction Yb relative to the ground vias 131c and 131d from being received by the antenna layer 111.

[0249] The ground vias 131a and 131b prevent electromagnetic waves generated from the antenna layer 111 from propagating to the other side in the width direction Yb relative to the ground vias 131a and 131b. The ground vias 131a and 131b prevent electromagnetic waves propagating from the other side in the width direction Yb relative to the ground vias 131a and 131b from being received by the antenna layer 111.

[0250] The ground layer 132 suppresses the propagation of electromagnetic waves generated from the antenna layer 111 in the width direction Yb and the depth direction Yc. The ground layer 132 suppresses the reception of electromagnetic waves by the antenna layer 111 from the width direction Yb and the depth direction Yc relative to the ground layer 132.

[0251] (Second embodiment) In the first embodiment, an example has been described in which the integrated circuit 200 is connected to the circuit board 30A by connecting the antenna board 20A and the circuit board 30A. Instead, a second embodiment will be described with reference to FIGS. 9 and 44 to 51, in which the integrated circuit 200 is connected to the circuit board 30A while being supported by a support wafer 300.

[0252] As shown in FIG. 44, the communication device 10 of the second embodiment is configured by adding solder ball pads 500 and 504, a signal electrode 505, rewiring layers 501 and 503, and solder balls 260a and 260b to the communication device 10 of the first embodiment.

[0253] The communication device 10 of this embodiment is provided with a connection layer 290, a power supply electrode 601, ground electrodes 600 and 602, and connection electrodes 601a, 600a, and 602a.

[0254] The power supply electrode 601 is disposed on the other side in the thickness direction Ya of the power supply electrode 127. The power supply electrode 601 is connected to the power supply electrode 127 via a connection electrode 601a.

[0255] The ground electrode 600 is disposed on the other side of the ground electrode 135b in the thickness direction Ya. The ground electrode 600 is connected to the ground electrode 135b via a connection electrode 600a.

[0256] The ground electrode 602 is disposed on the other side of the ground electrode 135a in the thickness direction Ya. The ground electrode 602 is connected to the ground electrode 135a via a connection electrode 602a. In this embodiment, the ground electrodes 600 and 602 and the connection electrodes 600a, 601a, and 602a are made of a conductive material containing copper.

[0257] The solder ball pads 500 and 504 are each arranged to penetrate the connection layer 290 in the thickness direction Ya. The rewiring layer 503 is connected between the solder ball pad 504 and the signal electrode 505. The solder ball pad 500 is connected to the rewiring layer 501.

[0258] Similar to the first embodiment, each of the integrated circuits 200 of this embodiment includes a semiconductor element 201, a power supply pad 202, ground pads 203a and 203b, a signal pad 204, and a protective film 205, as shown in FIG.

[0259] Additionally, the integrated circuits 200 include an insulating layer 230 and vias 280, 281, 282, and 283 for external connections.

[0260] The insulating layer 230 is formed in the form of a film so as to cover the power supply pad 202, the ground pads 203a and 203b, the signal pad 204, and the protective film 205 from one side in the thickness direction Ya.

[0261] The external connection via 280 is arranged so as to penetrate the insulating layer 240 in the thickness direction Ya. The other side of the external connection via 280 in the thickness direction Ya is connected to the power supply pad 202 of the integrated circuit 200.

[0262] The external connection via 281 is arranged to penetrate the insulating layer 240 in the thickness direction Ya. The other side of the external connection via 281 in the thickness direction Ya is connected to the ground pad 203b of the integrated circuit 200.

[0263] The external connection vias 282 are arranged so as to penetrate the insulating layer 240 in the thickness direction Ya. The other side of the external connection vias 282 in the thickness direction Ya is connected to the ground pad 203a of the integrated circuit 200.

[0264] The external connection vias 283 are arranged so as to penetrate the insulating layer 230 in the thickness direction Ya. The other side of the external connection vias 283 in the thickness direction Ya is connected to the signal pads 204 of the integrated circuit 200.

[0265] In this embodiment, the external connection vias 280, 281, 282, and 283 are each made of a conductive material containing copper.

[0266] Next, regarding the manufacturing process of the communication device 10 of this embodiment, FIGS. 9 and 44 to 53 are cross-sectional views for explaining the manufacturing process of the communication device 10. FIG.

[0267] First, in the first process of step S100 in FIG. 9, the antenna substrate 20A is formed as shown in FIG.

[0268] Next, in the second process of step S110 in Fig. 9, the integrated circuit 200 is formed. Specifically, as shown in Fig. 46, a plurality of integrated circuits 200 are formed.

[0269] Next, the multiple integrated circuits 200 are separated, and one of the multiple integrated circuits 200 is mounted on the upper surface of the support wafer 404. At this time, the single integrated circuit 200 is held on the upper surface of the support wafer 404, as shown in FIG.

[0270] 48 and 49, one integrated circuit 200 is placed above the antenna substrate 20A, and the positions of the antenna substrate 20A and the circuit substrate 30A are adjusted, and the connection layer 290 and the insulating layer 230 are connected by thermocompression bonding. In this embodiment, the connection layer 290 and the insulating layer 230 are made of a thermosetting resin such as a non-conductive film (NCF).

[0271] At this time, the external connection vias 281, 280, 282, 283, ground electrodes 600, 602, power supply electrode 601, signal electrode 505, etc. are heated in a formic acid atmosphere until the ambient temperature reaches, for example, 250°C.

[0272] At this time, the external connection via 281 and the ground electrode 600 are diffusion-bonded together in a state where the oxide films of the external connection via 281 and the ground electrode 286 are reduced by formic acid. As a result, the ground pad 203b and the ground electrode 135b are connected to each other via the external connection via 281, the ground electrode 600, and the connection electrode 600a.

[0273] Therefore, the ground pad 203b and the ground electrode 135b are connected by thermocompression bonding. With the oxide films of the external connection via 280 and the power supply electrode 601 reduced by formic acid, the external connection via 280 and the power supply electrode 601 are diffusion-bonded.

[0274] Therefore, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected via the external connection via 280, the power supply electrode 127, the power supply electrode 601, and the connection electrode 601a. ​​Therefore, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected by thermocompression bonding.

[0275] The external connection via 282 and the ground electrode 602 are diffusion-bonded together in a state where the oxide films of the external connection via 282 and the ground electrode 602 are reduced by formic acid. As a result, the ground pad 203a of the integrated circuit 200 and the ground electrode 135a are connected via the external connection via 282, the ground electrode 602, and the connection electrode 602a. Therefore, the ground pad 203a of the integrated circuit 200 and the ground electrode 135a are connected by thermocompression bonding.

[0276] At this time, the external connection via 283 and the signal electrode 505 are diffusion-bonded in a state in which the oxide films of the external connection via 283 and the signal electrode 505 are reduced by formic acid. Therefore, the external connection via 283 and the solder ball pad 504 are connected to each other via the signal electrode 505.

[0277] 50, the support wafer 404 is peeled off from the integrated circuit 200. Thereafter, solder balls 260a are formed on the solder ball pads 504, and solder balls 260b are formed on the solder ball pads 500. Next, the support wafer 300 and the temporary adhesive layer 301 are removed from the antenna substrate 20A.

[0278] As a result of the above, one integrated circuit 200 and the antenna substrate 20A are connected together, completing the communication device 10 of this embodiment.

[0279] According to the present embodiment described above, the manufacturing method of the communication device 10 includes forming the antenna substrate 20A and forming the integrated circuit 200 separately from the antenna substrate 20A. In addition, the manufacturing method of the communication device 10 of the present embodiment includes connecting the antenna substrate 20A and the integrated circuit 200 in a state where the power supply pad 202 and the power supply line 120 are connected.

[0280] As described above, the process of forming the circuit board 30A and the process of forming the integrated circuit 200 are carried out separately, which improves yield compared to when the circuit board 30A and the integrated circuit 200 are formed consecutively.

[0281] In this embodiment, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected by thermocompression bonding through the external connection via 280 and the power supply electrode 601. Therefore, similar to the first embodiment, the electrical resistance between the power supply pad 202 and the power supply line 120 can be reduced.

[0282] In this embodiment, the external connection via 280 and the power supply electrode 601 constitute a conductive member for connecting the power supply pad 202 and the connection flange layer 126 of the power supply line 120. The conductive member is made of a conductive material containing copper.

[0283] (Third embodiment) In the second embodiment, an example has been described in which the integrated circuit 200 is connected to the circuit board 30A while the integrated circuit 200 is supported by the support wafer 300. However, a third embodiment in which the integrated circuit 200 is connected to the circuit board 30A by itself will be described with reference to FIGS.

[0284] The communication device 10 of the third embodiment and the communication device 10 of the second embodiment have the same configuration.

[0285] The manufacturing method of the communication device 10 of this embodiment includes forming the antenna substrate 20A and forming the integrated circuit 200 separately from the antenna substrate 20A. The manufacturing method of the communication device 10 of this embodiment also includes connecting the antenna substrate 20A and the integrated circuit 200 in a state where the integrated circuit 200 is not supported by the support wafer 300 and the power supply pad 202 and the power supply line 120 are connected.

[0286] In this case, similar to the first embodiment, the power supply pad 202 of the integrated circuit 200 and the connection flange layer 126 of the power supply line 120 are connected by thermocompression bonding. The ground pad 203b and the ground electrode 135b are connected by thermocompression bonding. The ground pad 203a of the integrated circuit 200 and the ground electrode 135a are connected by thermocompression bonding.

[0287] As a result, similar to the first embodiment, the yield can be improved compared to when the circuit board 30A and the integrated circuit 200 are formed in succession.

[0288] (Other embodiments) (1) In the above first, second, and third embodiments, the communication device 10 of the present invention is described as a communication device using millimeter waves. However, instead of this, the following (a) and (b) may be adopted. (a) The communication device 10 of the present invention may use electromagnetic waves with wavelengths other than millimeter waves (for example, microwaves). (b) The communication device 10 of the present invention may be any of various wireless communication devices such as a mobile phone, a personal digital assistant, or a wireless LAN.

[0289] (2) In the above first, second, and third embodiments, an example has been described in which the communication device 10 is configured using two boards, namely, the antenna board 20A and the circuit board 30A. However, the present invention is not limited to this, and the communication device 10 of the present invention may be configured using three or more boards.

[0290] (3) In the first, second, and third embodiments, the dielectric layers 100a, 100b, 100c, and 100d are formed of a resin material. However, the present invention is not limited to this. The dielectric layers 100a, 100b, 100c, and 100d may be formed of a ceramic having a low dielectric constant.

[0291] (4) In the above first, second, and third embodiments, an example has been described in which the communication device of the present invention is the communication device 10 that uses one antenna layer 111. However, instead of this, the communication device of the present invention may be a communication device that is a radar device that includes a transmitting antenna layer 111a and a receiving antenna layer 111b.

[0292] 54, the communication device 10 includes a transmitting antenna layer 111a and a receiving antenna layer 111b. The transmitting antenna layer 111a and the receiving antenna layer 111b are connected to the integrated circuit 200.

[0293] The integrated circuit 200 includes an arithmetic circuit 200a, an analog-to-digital conversion circuit 200b, a demodulation circuit 200c, and a signal generation section 200f.

[0294] The signal generating section 200f outputs a transmission signal to the transmitting antenna layer 111a, causing the transmitting antenna layer 111a to transmit the transmission signal using electromagnetic waves as a medium.

[0295] When the transmission signal is subsequently reflected by a detection target around the vehicle, the reflected transmission signal is received by the receiving antenna layer 111b. At this time, the receiving antenna layer 111b outputs the received transmission signal to the demodulation circuit 200c as a received signal. The demodulation circuit 200c demodulates the received signal and outputs the demodulated received signal to the arithmetic circuit 200a. The arithmetic circuit 200a calculates the distance between the detection target around the vehicle and the host vehicle based on the demodulated received signal.

[0296] Furthermore, as shown in FIG. 55, the communication device 10 including the transmitting antenna layer 111a and the receiving antenna layer 111b may be applied to a communication device other than a radar device.

[0297] 55 are preferably configured similarly to the antenna layer 111 of the first embodiment. Specifically, a transmitting antenna substrate 20A including the transmitting antenna layer 111a and a receiving antenna substrate 20A including the receiving antenna layer 111b are provided separately.

[0298] (5) In the first, second, and third embodiments, the antenna 110, the power feed line 120, and the electromagnetic shielding portion 130 are each made of a conductive material containing copper. However, instead of this, the antenna 110, the power feed line 120, and the electromagnetic shielding portion 130 may be made of a conductive material other than copper, such as titanium or tungsten.

[0299] Furthermore, various conductors such as the external connection vias 280, 281, 282, 283, and 284, the power supply electrode 285, and the ground electrodes 286 and 287 may be made of a conductor other than copper, such as titanium or tungsten.

[0300] (6) In the above first, second and third embodiments, an example was described in which the plurality of ground vias 131a, 131b, 131c, 131d, 132a, 132b, 132c, 132d, 133a, 133b, 133c, 134a, 134b and 134c were formed in a cylindrical shape.

[0301] However, instead of this, the plurality of ground vias 131a, 131b, 131c, 131d, 132a, 132b, 132c, 132d, 133a, 133b, 133c, 134a, 134b, and 134c may be formed in a prismatic shape.

[0302] (7) In the first, second, and third embodiments, examples have been described in which the connecting flange layers 124, 126 are formed in a disk shape. Instead of this, the connecting flange layers 124, 126 may be formed in a plate shape other than a disk shape.

[0303] (8) In the first, second, and third embodiments, the antenna 110 is described as an antenna that performs both transmission and reception. However, instead of this, the antenna 110 may be a transmission-only antenna that exclusively transmits transmission signals, or the antenna 110 may be a reception-only antenna that exclusively receives reception signals. (9) In the above first, second, and third embodiments, an example was described in which the antenna substrate 20A is manufactured in a process sequence in which each component constituting the antenna substrate 20A is stacked sequentially from one side of the thickness direction Ya to the other side. The components are components that make up the antenna substrate 20A, such as the ground layers 131, 132, 133, 134, and 135, and the dielectric layers 100a, 100b, 100c, and 100d. However, instead of this, the antenna substrate 20A may be manufactured in a process sequence in which the components constituting the antenna substrate 20A are stacked in order from the other side to one side in the thickness direction Ya. (10) In the above first, second, and third embodiments, an example was described in which the side of the antenna substrate assembly 20 on which the ground layer 131 is arranged is one side in the thickness direction Ya, and the side on which the ground layer 135 is arranged is the other side in the thickness direction Ya. However, instead of this, the side of the antenna substrate assembly 20 on which the ground layer 131 is arranged may be the other side in the thickness direction Ya, and the side of the antenna substrate assembly 20 on which the ground layer 135 is arranged may be the one side in the thickness direction Ya. That is, for the sake of explanation, the side of the antenna substrate assembly 20 on which the ground layer 131 is arranged is simply defined as one side in the thickness direction Ya, and the side on which the ground layer 135 is arranged is simply defined as the other side in the thickness direction Ya. Therefore, this definition of the thickness direction Ya is not limited in this specification.

[0304] (11) The present invention is not limited to the above-described embodiments and can be modified as appropriate within the scope of the claims. The above-described embodiments are not unrelated to each other and can be combined as appropriate unless the combination is clearly impossible. It goes without saying that the elements constituting the embodiments are not necessarily essential unless specifically stated as essential or clearly considered essential in principle. In the above-described embodiments, when numerical values ​​such as the number, values, amounts, and ranges of components of the embodiments are mentioned, they are not limited to the specific numbers unless specifically stated as essential or clearly limited to a specific number in principle. In the above-described embodiments, when the shape, positional relationship, etc. of components are mentioned, they are not limited to the shape, positional relationship, etc. unless specifically stated or limited to a specific shape, positional relationship, etc. in principle. [Explanation of symbols]

[0305] 20A Antenna Board 30A circuit board 100a Dielectric layer 100b dielectric layer 100c dielectric layer 100d dielectric layer 110 Antenna 120 Power Supply Line 130 Electromagnetic shielding section 200 Integrated Circuits 210 Mold resin layer

Claims

1. forming an antenna substrate (20A) including a first insulating substrate (100a-100d) formed in a plate shape from an electrically insulating material, an antenna (110) mounted on the first insulating substrate, and a feeder line (120) mounted on the first insulating substrate and connected to the antenna; forming a circuit board (30A) separately from the antenna board, the circuit board (30A) comprising: a second insulating substrate (210) formed in a plate shape from an electrically insulating material; and a communication integrated circuit (200) mounted on the second insulating substrate and having a power supply terminal (202) for connecting the antenna via the power supply line, for transmitting a transmission signal from the antenna or receiving a reception signal via the antenna; and connecting the antenna substrate and the circuit board in a state in which the power supply terminal and the power supply line are connected, connecting the power supply terminal of the communication integrated circuit to the power supply line includes connecting the power supply terminal to the power supply line by a conductive member (285); A method for manufacturing a communication device, wherein the power supply terminal, the power supply line, and the conductive member of the communication integrated circuit are each formed of a conductive material containing copper.

2. forming an antenna substrate (20A) including a first insulating substrate (100a-100d) formed in a plate shape from an electrically insulating material, an antenna (110) mounted on the first insulating substrate, and a feeder line (120) mounted on the first insulating substrate and connected to the antenna; forming a communication integrated circuit (200) separately from the antenna substrate, the communication integrated circuit (200) having a power supply terminal (202) for connecting the antenna via the power supply line, for transmitting a transmission signal from the antenna and receiving a reception signal via the antenna; connecting the communication integrated circuit and the antenna substrate in a state where the power supply terminal and the power supply line are connected, connecting the power supply terminal of the communication integrated circuit to the power supply line includes connecting the power supply terminal to the power supply line by a conductive member (285); A method for manufacturing a communication device, wherein the power supply terminal, the power supply line, and the conductive member of the communication integrated circuit are each formed of a conductive material containing copper.

3. When a direction of the first insulating substrate intersecting a thickness direction (Ya) is defined as an intersecting direction (Yb), forming the antenna substrate includes forming an electromagnetic shielding conductor (130) from a conductive material, the electromagnetic shielding conductor (130) being connected to ground and being formed so as to sandwich the power supply line from one side and the other side of the intersecting direction, 3. The method for manufacturing a communication device according to claim 1, wherein the electromagnetic shielding conductor is provided to prevent electromagnetic waves generated from the power supply line from leaking outside an area (130A) sandwiched between the electromagnetic shielding conductors, or to prevent electromagnetic waves arriving from outside the area from propagating to the power supply line.

4. When the intersecting direction is defined as a first intersecting direction, and a direction of the first insulating substrate that intersects with the thickness direction and also intersects with the first intersecting direction is defined as a second intersecting direction (Yc), forming the power supply line includes forming a power supply conductor (125) formed to extend in the second intersecting direction; forming the electromagnetic shielding conductor includes forming a first ground conductor (133) disposed on one side of the power supply conductor in the thickness direction and formed in a film shape extending in the first intersecting direction and the second intersecting direction, and forming a second ground conductor (135) disposed on the other side of the power supply conductor in the thickness direction and formed in a film shape extending in the first intersecting direction and the second intersecting direction, the first ground conductor suppresses propagation of electromagnetic waves generated from the power supply conductor to one side in the thickness direction of the first ground conductor, or suppresses propagation of electromagnetic waves propagating from one side in the thickness direction of the first ground conductor to the other side in the thickness direction of the first ground conductor to the power supply conductor, 4. The method for manufacturing a communication device according to claim 3, wherein the second ground conductor suppresses propagation of electromagnetic waves generated from the power supply conductor to the other side in the thickness direction relative to the second ground conductor, or suppresses propagation of electromagnetic waves propagating from the other side in the thickness direction relative to the second ground conductor toward the one side in the thickness direction relative to the second ground conductor to the power supply conductor.

5. 5. The method for manufacturing a communication device according to claim 4, wherein forming the electromagnetic shielding conductor includes forming a third ground conductor (134) formed to surround the power supply conductor from the first intersecting direction and the second intersecting direction.

6. When the power supply conductor is a first power supply conductor (125), forming the power supply line includes forming a second power supply conductor (122) connected to the first power supply conductor; 6. The method for manufacturing a communication device according to claim 5, wherein forming the electromagnetic shielding conductor includes forming a plurality of fourth ground conductors (133 b, 133 c) that are arranged on one side of the second power supply conductor in the first intersecting direction and aligned in the second intersecting direction, and a plurality of fifth ground conductors (133 a) that are arranged on the other side of the second power supply conductor in the first intersecting direction and aligned in the second intersecting direction.

7. 7. The method for manufacturing a communication device according to claim 6, wherein forming the electromagnetic shielding conductor includes forming the plurality of fourth ground conductors so as to penetrate the first insulating substrate (100a) in the thickness direction, and forming the plurality of fifth ground conductors so as to penetrate the first insulating substrate (100b) in the thickness direction.

8. forming the power supply line forming the second power supply conductor (122) so as to have a columnar shape with an axis extending in the thickness direction as a center line; forming a connection flange layer (124) disposed on one side of the second power supply conductor in the thickness direction, connected to the second power supply conductor, and having a plate shape with the axis as a center line; and forming a third power supply conductor (121) so as to be disposed on one side of the connection flange layer in the thickness direction, connected to the connection flange layer, and have a columnar shape with the axis as a center line, The method for manufacturing a communication device according to claim 7 , wherein the connection flange layer is formed so as to protrude radially outward from the second power supply conductor and the third power supply conductor, the radially outward from the axis being a center line.

9. When a direction of the first insulating substrate that intersects with the thickness direction (Ya) is defined as a first intersecting direction (Yb), and a direction that intersects with the first intersecting direction and also intersects with the thickness direction is defined as a second intersecting direction (Yc), forming the antenna substrate a first feeder line (121) as the feeder line formed of a conductive material into a columnar shape with an axis extending in the thickness direction as a center line; forming first electromagnetic shielding conductors (132c, 132d) and second electromagnetic shielding conductors (132a, 132b) that are arranged on one side and the other side of the first power supply line in the first intersecting direction and are formed of a conductive material so as to extend in the thickness direction, Furthermore, forming the antenna substrate includes: and arranging the electrically insulating material so as to fill the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor with the electrically insulating material, and forming the other side of the thickness direction of the arranged electrically insulating material and the other side of the thickness direction of the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor into a plane shape, with the other end portions of the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor left exposed, thereby forming the first insulating substrate (100c) from the arranged electrically insulating material, forming the antenna substrate a second feeder line (124) disposed on the other side of the first insulating substrate in the thickness direction, connected to the first feeder line, and formed in a film shape extending in the first intersecting direction and the second intersecting direction with the axis as a center line; a third electromagnetic shielding conductor (133) disposed on the other side of the first insulating substrate in the thickness direction, connected to the first electromagnetic shielding conductor and the second electromagnetic shielding conductor, and formed in a film shape extending in the first intersecting direction and the second intersecting direction so as to surround the second power supply line, the second power supply line forms a flange portion that protrudes radially outward relative to the first power supply line with the axis as a center line, the first electromagnetic shielding conductor and the second electromagnetic shielding conductor are provided to prevent electromagnetic waves generated from the first power feed line from leaking outside an area (130A) sandwiched between the first electromagnetic shielding conductor and the second electromagnetic shielding conductor, or to prevent electromagnetic waves arriving from outside the area from propagating to the first power feed line; 3. The method for manufacturing a communication device according to claim 1, wherein the third electromagnetic shielding conductor suppresses propagation of electromagnetic waves generated from the second feeder line in the first intersecting direction and the second intersecting direction, or suppresses reception by the second feeder line of electromagnetic waves propagating from the first intersecting direction and the second intersecting direction relative to the third electromagnetic shielding conductor.

10. When a direction of the first insulating substrate that intersects with a thickness direction (Ya) is defined as a first intersecting direction (Yb), and a direction that intersects with the first intersecting direction and also intersects with the thickness direction is defined as a second intersecting direction (Yc), forming the antenna substrate includes: a first feeder line (122) as the feeder line formed of a conductive material into a columnar shape with an axis extending in the thickness direction as a center line; a first electromagnetic shielding conductor (133b, 133c) and a second electromagnetic shielding conductor (133a) that are arranged on one side and the other side of the first power supply line in the first intersecting direction and are formed of a conductive material so as to extend in the thickness direction, Furthermore, forming the antenna substrate includes: and arranging the electrically insulating material so as to fill the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor with the electrically insulating material, and forming the other side of the thickness direction of the arranged electrically insulating material and the other side of the thickness direction of the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor into a plane shape, with the other end portions of the first power feed line, the first electromagnetic shielding conductor, and the second electromagnetic shielding conductor left exposed, thereby forming the first insulating substrate (100b) from the arranged electrically insulating material. The forming of the antenna substrate includes: a second power supply line (125) as the power supply line, which is disposed on the other side of the first insulating substrate in the thickness direction, connected to the first power supply line, and formed so as to extend in the second intersecting direction; a third electromagnetic shielding conductor (134) disposed on the other side of the first insulating substrate in the thickness direction, connected to the first electromagnetic shielding conductor and the second electromagnetic shielding conductor, and formed in a film shape extending in the first intersecting direction and the second intersecting direction so as to surround the second power supply line, the first electromagnetic shielding conductor and the second electromagnetic shielding conductor are provided to prevent electromagnetic waves generated from the first power feed line from leaking outside an area (130A) sandwiched between the first electromagnetic shielding conductor and the second electromagnetic shielding conductor, or to prevent electromagnetic waves arriving from outside the area from propagating to the first power feed line; 3. The method for manufacturing a communication device according to claim 1, wherein the third electromagnetic shielding conductor suppresses propagation of electromagnetic waves from the second feeder line in the first intersecting direction and the second intersecting direction, or suppresses reception by the second feeder line of electromagnetic waves propagating from the first intersecting direction and the second intersecting direction relative to the third electromagnetic shielding conductor.

11. When a direction of the first insulating substrate that intersects with a thickness direction (Ya) is defined as a first intersecting direction (Yb), and a direction that intersects with the first intersecting direction and also intersects with the thickness direction is defined as a second intersecting direction (Yc), forming the antenna substrate includes: forming first electromagnetic shielding conductors (131c, 131d) and second electromagnetic shielding conductors (131a, 131b) arranged in the first intersecting direction and formed of a conductive material so as to extend in the thickness direction, Furthermore, forming the antenna substrate includes: and arranging the electrical insulating material so as to fill the first electromagnetic shielding conductor and the second electromagnetic shielding conductor with the electrical insulating material, and forming the other side in the thickness direction of the first electromagnetic shielding conductor and the other side in the thickness direction of the arranged electrical insulating material into a planar shape while leaving the other side end portions in the thickness direction of the first electromagnetic shielding conductor and the second electromagnetic shielding conductor exposed, thereby forming the first insulating substrate (100d) from the arranged electrical insulating material, forming the antenna substrate an antenna layer (111) as the antenna, which is disposed on the other side of the first insulating substrate in the thickness direction, is provided on the other side of the first electromagnetic shielding conductor in the first intersecting direction, and is further provided on one side of the second electromagnetic shielding conductor in the first intersecting direction, and is formed in a film shape extending in the first intersecting direction and the second intersecting direction; a third electromagnetic shielding conductor (132) disposed on the other side of the first insulating substrate in the thickness direction, connected to the first electromagnetic shielding conductor and the second electromagnetic shielding conductor, and formed in a film shape extending in the first intersecting direction and the second intersecting direction so as to surround the antenna layer, the first electromagnetic shielding conductor prevents electromagnetic waves generated from the antenna layer from propagating to one side in the first intersecting direction relative to the first electromagnetic shielding conductor, or prevents electromagnetic waves propagating from one side in the first intersecting direction relative to the first electromagnetic shielding conductor from being received by the antenna layer; the second electromagnetic shielding conductor prevents electromagnetic waves generated from the antenna layer from propagating to the other side in the first intersecting direction relative to the second electromagnetic shielding conductor, or prevents electromagnetic waves propagating from the other side in the first intersecting direction relative to the second electromagnetic shielding conductor from being received by the antenna layer, 3. The method for manufacturing a communication device according to claim 1, wherein the third electromagnetic shielding conductor suppresses electromagnetic waves generated from the antenna layer from propagating in the first intersecting direction and the second intersecting direction, or suppresses electromagnetic waves from being received by the antenna layer from the first intersecting direction and the second intersecting direction relative to the third electromagnetic shielding conductor.

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