Controlled ion implantation into silicon carbide

JP7789537B2Active Publication Date: 2025-12-22WOLFSPEED INC
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Patent Information

Application Number
JP2021202470
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2014-05-19
Filing Date
2021-12-14
Publication Date
2025-12-22
Estimated Expiration
2034-07-25

AI Technical Summary

Technical Problem

Fabrication of silicon carbide semiconductor devices is challenging due to high temperatures required for device processes and the high thermal stability of dopant atoms, making conventional ion implantation techniques time-consuming, costly, and prone to lattice damage, especially when forming deep implant regions or regions requiring high doping uniformity.

Method used

Utilize controlled ion implantation with channeling at elevated temperatures and precise control of implant angles to reduce lattice damage and achieve uniform doping depths, allowing for the formation of deep implant regions with reduced energy implants.

Benefits of technology

Reduces fabrication time and cost while improving doping uniformity and reducing lattice damage, enabling the production of more reliable and stable silicon carbide semiconductor devices.

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Abstract

A method for forming a semiconductor structure is provided. Methods for forming semiconductor structures include using channeling implantation into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300°C or greater, implanting dopant ions into the heated silicon carbide layer at an implant angle of less than about 2° between the direction of implantation and the crystallographic axis, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000°C-hours to activate the implanted ions.
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Citation Information

Patent Citations

  • Manufacturing method of silicon carbide semiconductor device

    JP2013042050A