Edge uniformity tailorability in bipolar electrostatic chucks.

Abstract

Embodiments of the present technology may include an electrostatic chuck. The chuck may include an upper surface defining a recess in the chuck. The recess in the chuck may be configured to support a substrate. The chuck may further include a first electrode and a second electrode. The first electrode and the second electrode may be disposed within the chuck. The first electrode and the second electrode may be substantially coplanar. Additionally, the chuck may include a third electrode. The third electrode may be disposed within the chuck. Further, the third electrode may have an annular shape. The third electrode may be separated from the first electrode and the second electrode. Additionally, the third electrode may be substantially parallel to the first electrode and the second electrode. Systems and methods including the electrostatic chuck are also described.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. patent application Ser. No. 16 / 690,562, filed Nov. 21, 2019, the contents of which are incorporated herein by reference in their entirety for all purposes.

[0002]

[0002] The present technology relates to semiconductor substrate systems and methods, and more particularly, to methods and systems that include electrostatic chucks having multiple electrodes. [Background technology]

[0003]

[0003] In the manufacture of integrated circuits and other electronic devices, plasma processes are often used to deposit or etch various material layers. For example, the plasma enhanced chemical vapor deposition (PECVD) process is a chemical process in which electromagnetic energy is applied to at least one precursor gas or vapor to convert the precursor into a reactive plasma. The plasma can be generated inside a processing chamber, e.g., in situ, or in a remote plasma generator located remotely from the processing chamber. This process is widely used to deposit materials on substrates to produce high-quality, high-performance semiconductor devices.

[0004]

[0004] In the current semiconductor manufacturing industry, as feature sizes continue to shrink, transistor structures become increasingly complex and difficult to manufacture. To meet processing demands, advanced process control techniques are useful for controlling costs and maximizing substrate and die yields. Dies at the edge of the substrate typically suffer from yield issues (e.g., contact and via misalignment and poor selectivity to the hard mask). At the substrate processing level, advances in process uniformity control are needed to enable not only fine local process tuning, but also global process tuning across the entire substrate.

[0005]

[0005] Therefore, there is a need for a method and apparatus to enable fine local process tuning at the edge of a substrate. The present technique addresses these and other needs. Summary of the Invention

[0006]

[0006] Embodiments of the present technology may enable advantages in substrate handling and processing by using at least two bipolar electrodes and one annular electrode in a substrate support. The electrode configuration may enable better tailoring of ion flux near the edge of the wafer, which may result in greater uniformity of the deposited film. In addition, the combination of bipolar and annular electrodes may reduce the voltage required to electrostatically chuck the wafer. The reduced voltage may result in less arcing and fewer wafer defects. Furthermore, embodiments of the present technology may reduce the effect of electrostatic charge in the wafer on the plasma. As a result, the plasma may be ignited after the wafer is chucked rather than simultaneously with the chuck, and short-term plasma instabilities may be reduced during plasma ignition.

[0007]

[0007] Embodiments of the present technology may include an electrostatic chuck. The chuck may include a top surface. The top surface may define a recess in the chuck. The recess in the chuck may be configured to support a substrate. The recess in the chuck may be characterized by a first diameter. The chuck may further include a first electrode and a second electrode. The first electrode and the second electrode may be disposed within the chuck. The first electrode and the second electrode may be substantially coplanar. The first electrode may be separated from the second electrode. Additionally, the chuck may include a third electrode. The third electrode may be disposed within the chuck. Further, the third electrode may have an annular shape. The third electrode may be characterized by an inner diameter. The inner diameter may be larger than the first diameter. The third electrode may be separated from the first electrode and the second electrode. Additionally, the third electrode may be substantially parallel to the first electrode and the second electrode.

[0008]

[0008] Embodiments of the present technology may include a plasma processing system. The plasma processing system may include an electrostatic chuck. The chuck may include any chuck disclosed herein. The system may further include a first power supply in electrical communication with the first electrode and the second electrode. The first electrode and the second electrode may be connected to the first power supply such that when the first power supply supplies a voltage to the first electrode, the first electrode and the second electrode have voltages of opposite signs. The system may further include a second power supply in electrical communication with a third electrode.

[0009]

[0009] An embodiment of the present technology may include a method for processing a substrate. The method may include placing the substrate on an electrostatic chuck. The electrostatic chuck may include a first electrode, a second electrode, and a third electrode. The first electrode and the second electrode may be substantially coplanar. The third electrode may have an annular shape. The method may also include applying a first voltage to the first electrode. The method may further include applying a second voltage to the second electrode. The second voltage may be a voltage of opposite sign to the first voltage. Additionally, the method may include applying a third voltage to the third electrode.

[0010] These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying drawings.

[0011] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view of an exemplary processing chamber, in accordance with some embodiments of the present technique. [Figure 2A]

[0013] 1 is a top view of a substrate support assembly in accordance with some embodiments of the present technique; [Figure 2B]

[0014] 10 is an electrical configuration of electrodes according to some embodiments of the present technology. [Figure 3]

[0015] 1 is a partial perspective view of a substrate support assembly in accordance with some embodiments of the present technique; [Figure 4]

[0016] 1 illustrates exemplary steps in substrate processing, in accordance with some embodiments of the present technique.

[0013]

[0017] Some drawings are included as schematic diagrams. It is understood that the drawings are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated material for illustrative purposes.

[0014]

[0018] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0019] As the characteristic dimensions of semiconductor devices decrease, processing becomes more complex and presents additional challenges. Layers deposited near the edge of a substrate may not be as uniform as layers near the center of the substrate. Non-uniformities near the edge of a wafer can result in non-functional or poorly performing devices, reducing yield and / or reliability. Wafers are often not perfectly flat and are electrostatically chucked to reduce wafer bow. However, electrostatic chucking of wafers can result in arcing on the backside of the wafer. Previously, when semiconductor devices were larger, arcing on the backside of a wafer may not have been a major concern, but processes for producing smaller devices sometimes involve materials deposited on the backside of the wafer. Such arcing can create defects on the backside of the wafer, which can lead to defects on the frontside of the wafer. Additionally, electrostatic chucking of wafers in conventional manners can accumulate charge on the wafer, which can affect plasma ignition and stability. Embodiments of the present technology can overcome these challenges, as described below.

[0016]

[0020] 1 is a cross-sectional view of a processing chamber 100 according to one or more embodiments. In one or more embodiments, processing chamber 100 is a deposition chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber, suitable for depositing one or more materials on a substrate, such as substrate 154. In another embodiment, processing chamber 100 is an etch chamber suitable for etching a substrate, such as substrate 154. Examples of processing chambers that may be adapted to benefit from exemplary aspects of the present disclosure are the Producer® Etch Processing Chamber and Precision™ Processing Chamber, commercially available from Applied Materials, Inc., located in Santa Clara, California. It is contemplated that other processing chambers, including processing chambers from other manufacturers, may be adapted to benefit from aspects of the present disclosure.

[0017]

[0021] The processing chamber 100 can be used for a variety of plasma processes. In one embodiment, the processing chamber 100 can be used to perform dry etching using one or more etchants. For example, the processing chamber can be used to ignite a plasma from precursors such as one or more fluorocarbons (e.g., CF4 or C2F6), O2, NF3, or combinations thereof. In another implementation, the processing chamber 100 can be used for PECVD using one or more chemical agents.

[0018]

[0022] The processing chamber 100 may include a chamber body 102, a lid assembly 106, and a substrate support assembly 104. The lid assembly 106 may be positioned at an upper end of the chamber body 102. The lid assembly 106 and the substrate support assembly 104 may be used with any processing chamber for plasma or thermal processing. Other chambers available from any manufacturer may also be used with the above-mentioned components. The substrate support assembly 104 may be disposed within the chamber body 102, and the lid assembly 106 may be coupled to the chamber body 102 to enclose the substrate support assembly 104 in a processing volume 120. The chamber body 102 includes a slit valve opening 126 formed in a sidewall thereof. The slit valve opening 126 may be selectively opened and closed to allow access to the interior volume 120 by a substrate handling robot (not shown) for substrate transfer.

[0019]

[0023] The electrode 108 may be disposed adjacent to the chamber body 102 and may separate the chamber body 102 from other components of the lid assembly 106. The electrode 108 may be part of the lid assembly 106 or may be a separate sidewall electrode. The electrode 108 may be an annular or ring-shaped member, such as a ring electrode. The electrode 108 may be a continuous loop around the periphery of the processing chamber 100 surrounding the processing space 120, or may be discontinuous at selected locations, if desired. Additionally, the electrode 108 may be a perforated electrode, such as a perforated ring or mesh electrode. The electrode 108 may also be a plate electrode, e.g., a secondary gas distributor.

[0020]

[0024] The isolator 110 contacts the electrode 108 and electrically and thermally isolates the electrode 108 from the gas distributor 112 and from the chamber body 102. The isolator 110 may be made of or contain one or more dielectric materials. Exemplary dielectric materials may be or contain one or more ceramics, metal oxides, metal nitrides, metal oxynitrides, silicon oxides, silicates, or any combination thereof. For example, the isolator 110 may be formed of or contain aluminum oxide, aluminum nitride, aluminum oxynitride, or any combination thereof. The gas distributor 112 features openings 118 to allow process gases to enter the processing space 120. Process gases may be supplied to the processing chamber 100 through one or more conduits 114, and the process gases may enter a gas mixing region 116 before flowing through one or more openings 118. The gas distributor 112 may be coupled to a power source 142 (e.g., an RF generator). DC power, pulsed DC power, and pulsed RF power may also be used.

[0021]

[0025] The substrate support assembly 104 may include a substrate support 180 that holds or supports one or more substrates 154 for processing. The substrate support 180 may be coupled to a lift mechanism via a shaft 144 that extends through the bottom of the chamber body 102. The lift mechanism may be flexibly sealed to the chamber body 102 by a bellows that prevents vacuum leakage around the shaft 144. The lift mechanism may enable the substrate support assembly 104 to move vertically within the chamber body 102 between a lower transfer position and several elevated process positions.

[0022]

[0026] The substrate support 180 may be formed from or contain a metallic or ceramic material. Exemplary metallic or ceramic materials may be or include one or more metals, metal oxides, metal nitrides, metal oxynitrides, or any combination thereof. For example, the substrate support 180 may be formed from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, or any combination thereof. The bipolar electrodes 122a and 122b may be coupled to the substrate support assembly 104. The bipolar electrodes 122a and 122b may be embedded within the substrate support 180 and / or coupled to a surface of the substrate support 180. The bipolar electrodes 122a and 122b may each be a plate, a perforated plate, a mesh, a wire screen, or any other dispersive configuration.

[0023]

[0027] Each of the bipolar electrodes 122a and 122b may be a regulated electrode and may be coupled to a regulation circuit 136 by a conduit 146 (e.g., a cable having a selected resistance (e.g., 50 Ω)) disposed within a shaft 144 of the substrate support assembly 104. The regulation circuit 136 may include an electronic sensor 138, an electronic tuner or controller 140, which may be a variable capacitor. The electronic sensor 138 may be a voltage sensor or a current sensor and may be coupled to the electronic tuner or controller 140 to provide further control over the plasma conditions in the process space 120. In one or more embodiments, the electronic tuner or controller 140 may be used to modulate the impedance on the bipolar electrodes 122a and 122b.

[0024]

[0028] Both bipolar electrodes 122a and 122b may be in electrical communication with electronic sensor 138. In other embodiments, bipolar electrode 122a may be in electrical communication with electronic sensor 138, and bipolar electrode 122b may be in independent electrical communication with a second electronic sensor and a second electronic tuner or controller, both of which may be the same as electronic sensor 138 and electronic tuner or controller 140. Bipolar electrodes 122a and 122b may be in electrical communication with a power supply (not shown). Bipolar electrodes 122a and 122b may be bias electrodes and / or electrostatic chuck electrodes. Bipolar electrodes 122a and 122b may also be heaters for substrate support 180.

[0025]

[0029] The ring electrode 124 may be coupled to the substrate support assembly 104. The ring electrode 124 may be embedded within the substrate support 180. The bipolar electrodes 122a and 122b may be disposed above the top of the ring electrode 124. In some embodiments, the ring electrode 124 is a bias electrode and / or an electrostatic chuck electrode. The ring electrode 124 may be coupled to a conditioning circuit 156 by one or more cables or conduits 158 disposed on the shaft 144 of the substrate support assembly 104. The conditioning circuit 156 may include a process controller 160 electrically coupled to the power source 150 and the ring electrode 124.

[0026]

[0030] Power source 150 may illustratively be a source of RF energy at a frequency (e.g., about 13.56 MHz) up to about 1000 W (but not limited to about 1000 W), although other frequencies and powers may be applied or otherwise provided as desired for a particular application. Power source 150 may be capable of generating either or both continuous or pulsed power. In one or more embodiments, the bias source may be a direct current (DC) or pulsed DC source. In other embodiments, the bias source may be capable of providing multiple frequencies, such as 2 MHz and 13.56 MHz.

[0027]

[0031] The process controller 160 may include a DC power supply 162, an RF generator 164, one or more electronic sensors 166, and one or more electronic tuners or controllers 168. The DC power supply 162 may supply a voltage to the ring electrode 124, and the RF generator 164 may apply an RF frequency during the plasma process. The DC power supply 162 may supply and control a voltage from 0 V to approximately 1000 V. In one or more embodiments, the electronic tuner or controller 168 may be used to modulate the impedance on the ring electrode 124. For example, the electronic tuner or controller 168 may be used to control the impedance with a variable capacitor so that approximately 5% to approximately 95% of the impedance is controlled to the ring electrode 124. In some embodiments, the electronic sensors 166 may be voltage or current sensors and may be coupled to the electronic tuner or controller 168 to provide further control over the plasma conditions in the process space 120.

[0028]

[0032] FIG. 2A shows a top view of a substrate support assembly 204 according to one or more embodiments. The substrate support assembly 204 may be the substrate support assembly 104. The substrate support assembly 204 may include bipolar electrodes 222a and 222b, which may be bipolar electrodes 122a and 122b. The bipolar electrodes 222a and 222b may be separated by a gap, which may be filled with an insulator. The insulator may be the body of the substrate support assembly 204. The width of the gap may be reduced or minimized. The width may be 0.01 to 0.05 inches, 0.05 to 0.1 inches, 0.1 to 0.25 inches, 0.25 to 0.5 inches, or 0.5 to 1.0 inches. A ring electrode 224 may be disposed below the bipolar electrodes 222a and 222b. The ring electrode 224 may be the ring electrode 124.

[0029]

[0033] The bipolar electrodes 222a and 222b and the ring electrode 224 may independently be embedded or partially embedded in the substrate support 280. The substrate support 280 may be the substrate support 180. The bipolar electrodes 222a and 222b may be a plate, a perforated plate, a mesh, a wire screen, or any other distributed configuration. The bipolar electrodes 222a and 222b may be formed from or contain one or more conductive metals or materials, such as aluminum, copper, alloys thereof, or any mixture thereof. The ring electrode 224 may be a circular ring. However, other shapes are also contemplated. The ring electrode 224 may be continuous or have intervals throughout. In some implementations, the bipolar electrode 222a and the ring electrode 124 are cathodes.

[0030]

[0034] In one or more embodiments, the combined surface area of ​​bipolar electrodes 222a and 222b is greater than that of ring electrode 224. In some embodiments, ring electrode 224 has an outer diameter greater than the diameter of bipolar electrodes 222a and 222b. Ring electrode 224 may be formed from or contain one or more conductive metals or materials, such as aluminum, copper, alloys thereof, or any mixture thereof. Ring electrode 224 may surround bipolar electrodes 222a and 222b. In some embodiments, ring electrode 224 at least partially overlaps bipolar electrodes 222a and 222b.

[0031]

[0035] Bipolar electrodes 222a and 222b and ring electrode 224 may be coupled to separate power sources, as shown in FIG. 2B . Ring electrode 225 may be coupled to power source 250. Bipolar electrodes 222a and 222b may be coupled to power source 270. Bipolar electrodes 222a and 222b may be configured to receive equal and opposite voltages from power source 270. Power source 250 and power source 270 may independently be DC or RF power sources having any power, voltage, or frequency described herein, including any power, voltage, or frequency described in FIG. 1 . For clarity, FIG. 2B does not show controllers, filters, tuners, or sensors that may be included in power sources 250 and 270. However, any suitable controllers, filters, tuners, or sensors may be included.

[0032]

[0036] The multiple bipolar electrodes 222a and 222b and the ring electrode 224 can be independently powered and controlled. Power distribution to the bipolar electrodes 222a and 222b can be a separate path from the ring electrode 124. Thus, current travel can be routed in separate sections that promote wider distribution, which can improve process uniformity. Additionally, the vertical separation between the ring electrode 224 and the bipolar electrodes 222a and 222b can extend the coupled power, which can improve process uniformity.

[0033]

[0037] In some implementations, the bipolar electrodes 222a and 222b can function as RF or DC electrodes while also functioning as chuck electrodes. The ring electrode 224 can be an RF or DC electrode that can condition the plasma together with the bipolar electrodes 222a and 222b. The bipolar electrodes 222a and 222b and the ring electrode 224 can generate power at the same frequency or at different frequencies.

[0034]

[0038] In one or more embodiments, RF power from one or both of power sources 250 and 270 can be varied to adjust the plasma. For example, sensors (not shown) can be used to monitor RF energy from any one or any combination of bipolar electrodes 222a and 222b and annular electrode 224. Data from the sensor devices can be communicated and used to vary the power applied to power sources 250 and / or 270.

[0035]

[0039] In another embodiment, a first impedance and / or voltage may be applied or otherwise provided to the bipolar electrodes 222a and 222b, and independently, a second impedance and / or voltage may be applied or otherwise provided to the annular electrode 124. The parameters of the first impedance and / or voltage and the parameters of the second impedance and / or voltage may be independently monitored, controlled, and adjusted based on the monitored parameters. Each of the first and / or second impedances may be independently increased and / or decreased, e.g., modulated, to improve uniformity across the top surface of the substrate. Also, each of the first and / or second voltages may be independently increased, decreased, modulated, or otherwise adjusted to improve uniformity over the substrate surface.

[0036]

[0040] In one or more embodiments, each of the first and / or second impedances and / or the first and / or second voltages can be independently modulated to reduce the in-plane distortion (IPD) of the substrate surface uniformity by 40% or more relative to the IPD of the substrate surface without changing the profile before adjusting or modulating either the impedance or voltage. For example, each of the first and / or second impedances and / or the first and / or second voltages can be independently modulated to reduce the IPD of the substrate surface uniformity by about 50%, about 60%, about 70%, or more without changing the profile. In some embodiments, the IPD of the plasma uniformity can be reduced by about 40% to about 70% relative to the IPD of the substrate surface uniformity without changing the profile before adjusting or modulating either the impedance or voltage.

[0037]

[0041] In one implementation, the bipolar electrodes 222a and 222b are powered simultaneously with the ring electrode 224. In one implementation, the bipolar electrodes 222a and 222b are on while the ring electrode 224 is off. In one implementation, the bipolar electrodes 222a and 222b are off while the ring electrode 224 is on. Modulating between the powered bipolar electrodes 222a and 222b and the ring electrode 224 can facilitate control of the plasma characteristics at the substrate edge. Additionally, adjusting the power supply separately to the ring electrode 224 and each of the bipolar electrodes 222a and 222b can result in increased or decreased plasma density. Varying the voltage / current distribution across the bipolar electrodes 222a and 222b and the ring electrode 224 can facilitate spatial distribution of the plasma across the substrate.

[0038]

[0042] FIG. 3 shows a partial perspective view of a substrate support assembly 304 including a substrate support 380 according to one or more embodiments. In this implementation, a substrate 354 is positioned or otherwise disposed above a bipolar electrode 322b, which is above a ring electrode 324. The bipolar electrode 322b and ring electrode 324 are shown horizontally overlapping one another. The substrate 354 is disposed within a recess 306 in the substrate support 380. The ring electrode 324 is disposed within the substrate support 380 such that the ring electrode 324 circumferentially surrounds the substrate 354 and the recess 306. The substrate support assembly 304, the substrate support 380, the bipolar electrode 322b, and the ring electrode 324 may be any similar components described herein, including those described in FIGS. 1, 2A, and 2B. Although only one bipolar electrode is shown, the substrate support assembly 304 may be symmetrical about the diameter of the substrate support assembly 304 such that a second bipolar electrode is on the other side of the substrate support assembly 304 .

[0039]

[0043] Various dimensions are shown in FIG. 3 . The distance 308 between the edge of the substrate 354 and the edge of the recess 306 can be 0.01 to 0.25 inches. The angle 310 from the edge of the recess 306 can be 0 to 90 degrees. A larger perpendicular angle can increase unwanted scattering of ions. The width 312 of the flat portion at the edge of the substrate support 380 can be 0.25 to 1.23 inches. The distance 314 from the top of the substrate support 380 to the top of the ring electrode 324 can be 0.01 to 0.3 inches. The height 316 from the top of the substrate support 380 to the recess 306 can be 0 to 0.25 inches. The lateral distance 318 from the edge of the substrate 354 to the ring electrode 324 can be 0.005 to 0.2 inches. The overlap width 320 of the bipolar electrode 322b and the annular electrode 324 can be from −0.25 to 0.25 inches, including 0 inches. A negative overlap width 320 means that the bipolar electrode 322b and the annular electrode 324 do not overlap but are instead separated by a gap. The dimensions in FIG. 3 may be for a substrate 354 having a diameter of 300 mm. For substrates with larger or smaller diameters, the dimensions may be scaled linearly with the substrate diameter, or the same range of dimensions may apply.

[0040]

[0044] Benefits of this technique may include improved control of the plasma adjacent to the edge of the substrate. The voltage or impedance to the three electrodes may be varied to control the plasma. Improved plasma control results in increased plasma uniformity. Controlling the power of the ring electrode may allow for more uniform deposition or etching at the edge of the substrate. The ring electrode may affect the ion flux at the edge of the wafer. Changing the impedance or capacitance of the ring electrode may also change the impedance of the plasma. Uniformity at the edge of the wafer may be improved at a particular voltage. As a percentage of the thickness at the center of the wafer, the average range of deposited film thickness at locations ranging from 135 to 148 mm (0 mm is the center of the wafer) may be 1% to 2%, 2% to 3%, or 3% to 4%.

[0041]

[0045] Additionally, embodiments of the present technology may reduce the chucking voltage, which may reduce arcing and further reduce backside damage to the wafer. The use of three electrodes (two bipolar electrodes and one annular electrode) may reduce the chucking voltage. It has been found that the chucking voltage between using two bipolar electrodes and one annular electrode reduces the minimum chucking voltage required before the onset of plasma impedance instability. For example, with monopolar and annular electrodes, plasma impedance instability was observed at voltages below 600 V. In contrast, with bipolar and annular electrodes, plasma impedance instability was observed at voltages below 200 V. Lower chucking voltages can be achieved because the annular electrodes can act as confinement rings to reduce leakage current from the bipolar electrodes.

[0042]

[0046] To provide some margin for the voltage at which plasma impedance is observed, the minimum chucking voltage for a bipolar electrode may be set at, for example, ±300 V, while the minimum chucking voltage for a monopolar electrode may be set at, for example, −700 V. The chucking voltage can be reduced by 50% or more, which is surprising since it is more than expected from adding another electrode for electrostatic chucking. In some embodiments, the chucking voltage can be reduced by 30% to 40%, 40% to 50%, 50% to 60%, 60% to 70%, 70% to 80%, or 80% to 90% when using a bipolar electrode with a ring electrode compared to either a monopolar electrode or a monopolar electrode with a ring electrode. Reducing the chucking voltage can reduce arcing on the backside of the wafer, which can reduce wafer defects. In some instances, the backside of the wafer may have a deposition film that can be damaged by arcing on the surface of the substrate support. Reducing the chucking voltage can also reduce operating costs and extend the life of equipment, including any portion of the substrate support assembly described herein. In some examples, the chucking voltage of the bipolar electrode may be the same as or close to the chucking voltage of the monopolar electrode, but the area of ​​the bipolar electrode may be reduced. For example, the total area of ​​the bipolar electrode may be 50% to 60%, 60% to 70%, 70% to 80%, 80% to 90%, or 90% to 95% of the area of ​​the substrate.

[0043]

[0047] Another benefit of some embodiments of the present technique is that the plasma can be turned on after the substrate is electrostatically chucked to the substrate support. In systems with monopolar electrodes, electrostatic chucking of the wafer can cause the wafer to become charged and affect the plasma with a positive charge. Turning on the plasma simultaneously with chucking the wafer can result in transient plasma behavior that can adversely affect substrate processing. In embodiments of the present technique, the bipolar electrodes even eliminate the wafer charge, thereby reducing the effect of electrostatic chucking of the wafer on the plasma.

[0044]

[0048] Embodiments of the present technology may include an electrostatic chuck. The chuck may be substrate support assembly 104, substrate support assembly 204, or substrate support assembly 304. The chuck may include a top surface. The top surface may define a recess (e.g., recess 306) in the chuck. The recess in the chuck may be configured to support a substrate. The substrate may be a semiconductor wafer, including a silicon wafer or a silicon-on-insulator wafer. The substrate may be substrate 154 or substrate 354. The recess in the chuck may be substantially flat. The recess in the chuck may be circular in shape and characterized by a first diameter. The first diameter may be larger than the diameter of the substrate, and the substrate may be located within the recess.

[0045]

[0049] The chuck may also include an insulator. The insulator may be the body of the chuck. The insulator may include any metallic, ceramic, or insulating material described herein. As an example, the insulator may include alumina. In some embodiments, the insulator may be air or a vacuum within the body of the chuck.

[0046]

[0050] The chuck may further include a first electrode and a second electrode. The first electrode and the second electrode may be any bipolar electrode described herein, including, for example, bipolar electrodes 122a, 122b, 222a, and 222b. The first electrode and the second electrode may be substantially coplanar. For example, the first electrode and the second electrode may be at the same vertical height, which may be along a line perpendicular to the substrate supported by the chuck. The first electrode may be separated from the second electrode. The first electrode and the second electrode may be separated by an insulator. For example, in FIG. 2A, bipolar electrodes 222a and 222b are separated by a uniform gap. Although the insulator is not shown in FIG. 2A, the uniform gap may be an insulator. The first electrode and the second electrode may include a mesh or any material described herein. A mesh may be preferred over a plate because less charge can build up in the mesh, which may reduce arcing, handling, and other problems when the electrode is discharged when the substrate is removed from the chuck.

[0047]

[0051] The first electrode and the second electrode may have substantially the same surface area. The first electrode may be substantially semicircular. The second electrode may be substantially semicircular. For example, if the first electrode and the second electrode both contact each other along a straight edge, the first electrode and the second electrode may form a circle or a substantially circle.

[0048]

[0052] The first electrode and the second electrode may be characterized by a second diameter. For example, the second diameter may be the diameter of the smallest circle that circumscribes the first electrode and the second electrode as they are disposed within the chuck. The second diameter may be larger than the first diameter of the recess.

[0049]

[0053] The first electrode can be configured such that when the substrate is placed in the recess and a first voltage is applied to the first electrode, a first electrostatic force holds the substrate to the chuck. The second electrode can be configured such that when the substrate is placed in the recess and a second voltage is applied to the second electrode, a second electrostatic force holds the substrate to the chuck. The second voltage can have an opposite polarity to the first voltage. The first voltage can have the same magnitude as the second voltage, but can be a negative voltage rather than a positive voltage.

[0050]

[0054] In some embodiments, the chuck may include one or more electrodes in addition to the first and second electrodes. The first electrode, the second electrode, and each of the one or more electrodes may have substantially the same area. The same area may allow equal amounts of positive and negative charge on the substrate, so that the charge has equal force on the substrate to secure it. The outer edges of the first electrode, the second electrode, and the one or more electrodes may describe the periphery of a circle. For example, each electrode may be a section of a circle. In total, the chuck may include 2, 4, 6, or 8 sections of a circle as electrodes.

[0051]

[0055] Additionally, the chuck may include a third electrode. The third electrode may have an annular shape. The third electrode may include any annular electrode described herein, including, for example, annular electrode 124, annular electrode 224, or annular electrode 324. The third electrode may be characterized by an inner diameter, where the inner diameter characterizes a circular hole within the annulus of the third electrode. The inner diameter may be greater than the first diameter of the recess. The inner diameter may be smaller than the second diameters of the first and second electrodes. The third electrode may be separated from the first and second electrodes. An insulator may separate the third electrode from the first and second electrodes.

[0052]

[0056] The third electrode may be characterized by an outer diameter, which may be the diameter of the smallest circle circumscribing the third electrode, and which may be larger than the second diameters of the first and second electrodes.

[0053]

[0057] The third electrode may be substantially parallel to the first and second electrodes. The third electrode may be positioned such that the distance from the top surface to the third electrode is greater than the distance from the top surface to the first electrode. The third electrode may be lower than the substrate, the first electrode, and the second electrode. Having the third electrode lower than the substrate may reduce arcing to the substrate. In particular, if the third electrode is above the substrate in a non-recessed portion of the substrate support, some arcing may form at the edge of the substrate. The third electrode may include a mesh or any material described herein.

[0054]

[0058] An embodiment of the present technology may include a plasma processing system. The plasma processing system may include an electrostatic chuck, which may be any of the chucks described herein. The system may include a first power supply in electrical communication with the first electrode and the second electrode. The first power supply may be power supply 270. The first electrode and the second electrode may be connected to the first power supply such that when the first power supply supplies a voltage to the first electrode, the first electrode and the second electrode have voltages of opposite signs. The first power supply may be a DC power supply or an RF power supply. The system may further include a second power supply in electrical communication with the third electrode. The second power supply may be an RF power supply or a DC power supply.

[0055]

[0059] In some embodiments, the plasma processing system may include a computer system. The computer system may include a non-transitory computer-readable medium storing instructions. The instructions may include any of the methods described herein, including method 400 described below. One or more processors may execute the instructions by sending commands to components of the plasma processing system. The components of the plasma processing system may include substrate handling robotics for moving substrates into, onto, off, and out of the processing region.

[0056]

[0060] 4 illustrates exemplary steps of a method 400 for processing a substrate in accordance with some embodiments of the present technique. The method 400 may include using any of the chucks or systems described herein.

[0057]

[0061] At block 402, the method 400 may include disposing a substrate on an electrostatic chuck. The electrostatic chuck may be any electrostatic chuck described herein, including substrate support assembly 104, substrate support assembly 204, or substrate support assembly 304. The electrostatic chuck may include a first electrode, a second electrode, and a third electrode. The first electrode and the second electrode may be substantially coplanar. The third electrode may have an annular shape. The electrodes may be any electrode described herein.

[0058]

[0062] At block 404, the method 400 may include applying a first voltage to the first electrode. The first voltage may be a DC voltage or an RF voltage. If the first voltage is a DC voltage, the first voltage may have a voltage having a magnitude of 50V to 100V, 100V to 200V, 200V to 300V, or 300V to 400V. If the first voltage is an RF voltage, the first voltage may have a maximum voltage of 50V to 100V, 100V to 200V, 200V to 300V, or 300V to 400V.

[0059]

[0063] In block 406, the method 400 may include applying a second voltage to the second electrode. The second voltage may be a voltage of opposite sign to the first voltage. For example, if the first voltage is positive, the second voltage may be negative with the same magnitude. In some embodiments, the second voltage may have a different magnitude than the first voltage. If the second voltage is RF, the second voltage may be a voltage of opposite sign to the first voltage at any instant, and the average of the second voltage may be the same as the average of the first voltage.

[0060]

[0064] At block 408, the method 400 may include applying a third voltage to the third electrode. The third voltage may be an RF voltage. A ratio of the magnitude of the maximum applied third voltage to the magnitude of the maximum applied first voltage may be 0.1 to 0.5, 0.5 to 1.0, 1.0 to 1.5, 1.5 to 2.0, 2.0 to 3.0, or greater than 3.0.

[0061]

[0065] Additionally, the method 400 may include heating the electrostatic chuck to a temperature of 500° C. to 600° C., 600° C. to 700° C., or greater than 700° C. The method 400 may further include forming a plasma in the processing region. The plasma may be formed after applying power to the bipolar electrode. A substrate may be placed in the processing region. The method 400 may include extinguishing the plasma and removing the substrate from the processing region and the plasma processing system.

[0062]

[0066] The plasma can be regulated using a bipolar electrode and an annular electrode. In one or more embodiments, a method for regulating a plasma in a chamber can include applying a first radio frequency power to the bipolar electrode and applying a second radio frequency power to the annular electrode. The method can also include monitoring parameters of the first and second radio frequency powers and adjusting one or both of the first radio frequency power and the second radio frequency power based on the monitored parameters.

[0063]

[0067] In another embodiment, a method for adjusting a plasma in a chamber may include applying a first impedance, a first voltage, or a combination of a first impedance and a voltage to a bipolar electrode and applying a second impedance, a second voltage, or a combination of a second impedance and a voltage to an annular electrode. The method may also include monitoring one or more parameters of the first impedance, the second impedance, the first voltage, the second voltage, or any combination thereof, and adjusting one or more of the first impedance, the second impedance, the first voltage, the second voltage, or any combination thereof based on the monitored parameters.

[0064] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0065]

[0057] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be deemed to limit the scope of the present technology. Furthermore, while a method or process may be described sequentially or stepwise, it should be understood that steps may be performed simultaneously or in an order different from that described.

[0066]

[0058] Where a range of values ​​is provided, it is to be understood that, unless the context clearly indicates otherwise, each intervening value between the upper and lower limits of that range is specifically disclosed, to the smallest unit of the lower limit. Any narrower ranges between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, are also encompassed. The upper and lower limits of these smaller ranges may be individually included or excluded from the range, and each range in which either, neither, or both limits are included in the smaller range is also encompassed within the scope, subject to any explicitly excluded limit in the stated range. When a stated range includes one or both limits, ranges excluding either or both of those included limits are also included.

[0067] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to an "electrode" includes a plurality of electrodes, a reference to a "power source" includes a reference to one or more power sources and equivalents thereof known to those skilled in the art, and so forth.

[0068]

[0060] Furthermore, the terms "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and the claims that follow, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. An electrostatic chuck, comprising: A top surface, the upper surface defining a recess in the chuck; the recess of the chuck is configured to support a substrate; an upper surface, the recess of the chuck being characterized by a first diameter; A first electrode and a second electrode, the first electrode and the second electrode are disposed within the chuck; the first electrode and the second electrode are substantially coplanar; a first electrode and a second electrode, the first electrode being separated from the second electrode; A third electrode, the third electrode is disposed within the chuck; the third electrode has an annular shape; the third electrode is characterized by an inner diameter; the inner diameter is greater than the first diameter; the third electrode is separated from the first electrode and the second electrode; the third electrode is disposed so that a distance from the upper surface to the third electrode is greater than a distance from the upper surface to the first electrode; a third electrode, the third electrode being substantially parallel to the first electrode and the second electrode; An electrostatic chuck comprising:

2. 10. The chuck of claim 1, wherein said first electrode and said second electrode have substantially the same surface area.

3. the first electrode includes a mesh; The chuck of claim 1 , wherein the second electrode comprises a mesh.

4. The chuck of claim 1 , wherein the third electrode comprises a mesh.

5. 1. An electrostatic chuck, comprising: A top surface, the upper surface defining a recess in the chuck; the recess of the chuck is configured to support a substrate; an upper surface, the recess of the chuck being characterized by a first diameter; A first electrode and a second electrode, the first electrode and the second electrode are disposed within the chuck; the first electrode and the second electrode are substantially coplanar; a first electrode and a second electrode, the first electrode being separated from the second electrode; A third electrode, the third electrode is disposed within the chuck; the third electrode has an annular shape; the third electrode is characterized by an inner diameter; the inner diameter is greater than the first diameter; the third electrode is separated from the first electrode and the second electrode; a third electrode, the third electrode being substantially parallel to the first electrode and the second electrode; Equipped with The electrostatic chuck, wherein the first electrode and the second electrode are characterized by a second diameter, the second diameter being greater than the inner diameter.

6. The chuck of claim 5 , wherein said third electrode is characterized by an outer diameter, said outer diameter being greater than said second diameter.

7. the first electrode is substantially semicircular; 10. The chuck of claim 1, wherein said second electrode is substantially semicircular.

8. further comprising one or more electrodes in addition to the first electrode, the second electrode, and the third electrode; The chuck of claim 1 , wherein an outer edge of the first electrode, an outer edge of the second electrode, and an outer edge of the one or more electrodes may describe the periphery of a circle.

9. the first electrode is configured such that when the substrate is placed in the recess and a first voltage is applied to the first electrode, a first electrostatic force holds the substrate to the chuck; 10. The chuck of claim 1, wherein the second electrode is configured such that when the substrate is placed in the recess and a second voltage having an opposite polarity to the first voltage is applied to the second electrode, a second electrostatic force holds the substrate to the chuck.

10. 10. The chuck of claim 1, further comprising a conditioning circuit in electrical communication with said third electrode.

11. 1. A plasma processing system, comprising: An electrostatic chuck, comprising: A top surface, the upper surface defining a recess in the chuck; the recess of the chuck is configured to support a substrate; an upper surface, the recess of the chuck being characterized by a first diameter; A first electrode and a second electrode, the first electrode and the second electrode are disposed within the chuck; the first electrode and the second electrode are substantially coplanar; a first electrode and a second electrode, the first electrode being separated from the second electrode; A third electrode, the third electrode is disposed within the chuck; the third electrode has an annular shape; the third electrode is characterized by an inner diameter; the inner diameter is greater than the first diameter; the third electrode is separated from the first electrode and the second electrode; the third electrode is disposed so that a distance from the upper surface to the third electrode is greater than a distance from the upper surface to the first electrode; a third electrode, the third electrode being substantially parallel to the first electrode and the second electrode; an electrostatic chuck comprising: a first power source in electrical communication with the first electrode and the second electrode, a first power supply, the first electrode and the second electrode being connected to the first power supply such that when the first power supply supplies a voltage to the first electrode, the first electrode and the second electrode have voltages of opposite signs; a second power source in electrical communication with the third electrode; A plasma processing system comprising:

12. The system of claim 11 , wherein the first power source is a DC power source.

13. The system of claim 11 , wherein the second power source is an RF power source.

14. 1. A method of processing a substrate, comprising: placing the substrate on an electrostatic chuck, the electrostatic chuck comprising: A top surface, the upper surface defining a recess in the chuck; the recess of the chuck is configured to support the substrate; an upper surface, the recess of the chuck being characterized by a first diameter; A first electrode and a second electrode, the first electrode and the second electrode are disposed within the chuck; the first electrode and the second electrode are substantially coplanar; a first electrode and a second electrode, the first electrode being separated from the second electrode; A third electrode, the third electrode is disposed within the chuck; the third electrode has an annular shape; the third electrode is characterized by an inner diameter; the inner diameter is greater than the first diameter; the third electrode is separated from the first electrode and the second electrode; the third electrode is disposed so that a distance from the upper surface to the third electrode is greater than a distance from the upper surface to the first electrode; a third electrode, the third electrode being substantially parallel to the first electrode and the second electrode; placing the substrate on an electrostatic chuck; applying a first voltage to the first electrode; applying a second voltage to the second electrode, the second voltage having an opposite sign to the first voltage; applying a third voltage to the third electrode; A method comprising:

15. The method of claim 14 , further comprising forming a plasma in a processing region in which the substrate is disposed.

16. The method of claim 14 , wherein the third voltage is an RF voltage.

17. 15. The method of claim 14, wherein the first voltage and the second voltage are DC voltages.

18. The method of claim 14, further comprising heating the electrostatic chuck to a temperature of at least 600°C.

19. 15. The method of claim 14, wherein the first voltage has a magnitude of 300V or less.

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