Etching equipment

Abstract

To provide a technique to perform etching by using a simpler device.SOLUTION: An etching device is used comprising: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; and a conveying device that conveys the substrate to cause the substrate to pass through an ion beam irradiation area a plurality of times. An ion beam irradiation direction is inclined with respect to a normal line of a surface of the substrate in the irradiation area. The plurality of times of passage of the substrate through the irradiation area include at least a first passage and a second passage. The direction of irradiation of the substrate with the ion beam in the first passage and the direction of irradiation of the substrate with the ion beam in the second passage are different from each other.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to an etching apparatus. [Background technology]

[0002] Flat panel display devices such as organic electroluminescence (EL) displays and liquid crystal display devices are widely used. For example, an EL display device includes a multilayer organic EL element, in which a functional layer having an emissive layer, an organic material layer that emits light, is formed between two opposing electrodes. The functional layer and electrode layer of an EL element are formed by depositing film-forming materials onto a glass substrate through a mask using techniques such as sputtering or vapor deposition in the chamber of a film-forming device. It is also known that a film formed by sputtering or other methods can be removed by ion beam etching, in which an ion beam is irradiated onto the film.

[0003] For ion beam etching, a method has been proposed in which an ion beam is irradiated while rotating or moving an object to be irradiated.

[0004] Patent Document 1 (JP-A No. 2013-503414) discloses a configuration in which a circular substrate is moved while being rotated in an in-line processing system in which a parallel ion beam is irradiated. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2013-503414 Summary of the Invention [Problem to be solved by the invention]

[0006] In conventional technology, the substrate is placed on a special carrier to be transported while being rotated, which poses the problem of the equipment becoming larger when handling large substrates.

[0007] The present invention has been made in view of the above problems, and aims to provide a technique for performing etching using a simpler apparatus. [Means for solving the problem]

[0008] The present invention employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; the irradiation direction of the ion beam with respect to the substrate in the first pass and the irradiation direction of the ion beam with respect to the substrate in the second pass the irradiation directions of the ion beams with respect to the substrate during the respective passes are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the irradiation device includes two of the ion sources, and the installation directions of the two ion sources with respect to the transport direction are different from each other; The installation direction of the ion source is such that the longitudinal direction is at an angle of 45°±5° with respect to the transport direction. An etching apparatus characterized by be.

[0009] The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the irradiation device includes four of the ion sources; The four ion sources are installed in different directions relative to the transport direction. An etching apparatus characterized by be. The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the transport device is capable of reciprocating the substrate in the transport direction, the irradiation device includes two of the ion sources; the two ion sources are installed in different directions relative to the transport direction; When a cross section of the substrate including the normal line is divided into a first side and a second side with the normal line as a boundary, the two ion sources each emit the ion beam onto the first side. and a second state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the second side. The etching apparatus is characterized by the above. The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the transport device is capable of reciprocating the substrate in the transport direction, the irradiation device includes two of the ion sources; the two ion sources are installed in different directions relative to the transport direction; The installation directions of the two ion sources are different by approximately 180°. The angle of the longitudinal direction of each of the two ion sources relative to the transport direction can be changed by approximately 90°. The etching apparatus is characterized by the above. The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the transport device is capable of reciprocating the substrate in the transport direction, when a cross section of the substrate including the normal line is divided into a first side and a second side with the normal line as a boundary, the ion source is switchable between a first state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the first side, and a second state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the second side, The ion source is capable of changing the angle of the longitudinal direction with respect to the transport direction. The etching apparatus is characterized by the above. The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; a rotation device that rotates the substrate in a plane parallel to the surface of the substrate outside the irradiation region of the ion beam; the transport device is capable of reciprocating the substrate in a transport direction by the transport device, The rotation device rotates the substrate after the substrate is irradiated with the ion beam while moving along the outward path in the transport direction, so that the substrate is irradiated with the ion beam from an angle different from that of the outward path in the transport direction on the return path in the transport direction. The etching apparatus is characterized by the above. The present invention also employs the following configuration: an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; a rotation device that rotates the substrate in a plane parallel to a surface of the substrate outside an irradiation region of the ion beam between the first pass and the second pass; When the substrate is reciprocated in the transport direction by the transport device, the rotation device rotates the substrate after the substrate is irradiated with the ion beam while moving on the outward path in the transport direction, so that the substrate is irradiated with the ion beam from an angle different from that on the outward path in the transport direction on the return path in the transport direction. The etching apparatus is characterized by the above. [Effects of the Invention]

[0010] According to the present invention, a technique for performing etching using a simpler device can be provided. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a schematic diagram illustrating the internal configuration of a film forming apparatus according to a first embodiment. [Figure 2] 4 is a flowchart showing the operation of the film forming apparatus according to the first embodiment. [Figure 3] FIG. 3 is an explanatory view of an etching operation in the film forming apparatus according to the first embodiment. [Figure 4] 1 is a schematic diagram illustrating the internal configuration of a film forming apparatus according to a first embodiment. [Figure 5] FIG. 2 is an explanatory diagram of an ion source according to the first embodiment. [Figure 6] FIG. 2 is an explanatory view of an etching area according to the first embodiment. [Figure 7] FIG. 2 is an explanatory diagram of an ion beam irradiation direction according to the first embodiment. [Figure 8] 2 is an explanatory diagram of a film formed by ion beam irradiation according to the first embodiment. FIG. [Figure 9] FIG. 10 is an explanatory view of an etching area according to the second embodiment. [Figure 10] 10 is an explanatory diagram of a mechanism for varying the irradiation direction of an ion beam according to the second embodiment. FIG. [Figure 11] FIG. 10 is an explanatory view of an etching area according to the third embodiment. [Figure 12] FIG. 10 is an explanatory view of an etching area according to Example 4. [Figure 13] FIG. 10 is an explanatory view of an etching area according to the fifth embodiment. [Figure 14] FIG. 10 is an explanatory view of an etching area according to Example 6. [Figure 15] FIG. 11 is an explanatory view of an etching area according to Example 7. [Figure 16] FIG. 13 is an explanatory diagram of a modified example of an etching area according to the seventh embodiment. [Figure 17] FIG. 13 is an explanatory view of an etching area according to Example 8. [Figure 18] 13 is a continuation of the explanatory diagram of the etching area according to Example 8. FIG. [Figure 19] FIG. 13 is an explanatory diagram of a modified example of an etching area according to the eighth embodiment. [Figure 20] FIG. 2 is a cross-sectional view showing a film formed on a textured substrate. DETAILED DESCRIPTION OF THE INVENTION

[0012] The following describes in detail embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, unless otherwise specified, the hardware and software configurations, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the device in the following description are not intended to limit the scope of the present invention to these alone.

[0013] The present invention is suitable for a film formation apparatus that forms a thin film of a film formation material on the surface of a film formation target such as a substrate by sputtering or vapor deposition. The present invention can be understood as a film formation apparatus, a film formation method, an etching apparatus, an etching method, and a method for controlling a film formation apparatus or an etching apparatus. The present invention can also be understood as an electronic device manufacturing apparatus, a control method thereof, and a method for manufacturing an electronic device. The present invention can also be understood as a program that causes a computer to execute the film formation method, etching method, or control method, or a storage medium that stores the program. The storage medium can be understood as a computer program. The storage medium may be a non-transitory storage medium readable by a computer.

[0014] The present invention is preferably applicable to a film forming apparatus that forms a thin film of a desired pattern on the surface of a substrate to be processed. Any material can be used for the substrate, such as glass, resin, metal, or silicon. Any material can be used for film formation, such as organic materials or inorganic materials (metals or metal oxides). The substrate may include a substrate material on whose surface one or more films have already been formed. The technology of the present invention is typically applied to manufacturing apparatuses for electronic devices and optical components. It is particularly suitable for organic electronic devices such as organic EL displays equipped with organic EL elements and organic EL display devices using such displays. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0015] Example 1 A film formation method and a film formation apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 8. FIG. 1 is a cross-sectional view showing a schematic internal configuration of the film formation apparatus according to the first embodiment of the present invention, showing the schematic internal configuration of the entire film formation apparatus as viewed from above. FIG. 2 is a flowchart showing the operation of the film formation apparatus according to the first embodiment of the present invention. FIG. 3 is an explanatory diagram of the etching operation in the film formation apparatus according to the first embodiment of the present invention. FIG. 4 is a schematic internal configuration diagram of the film formation apparatus according to the first embodiment of the present invention, showing the schematic configuration of the vicinity of the etching beam irradiation device as viewed in the substrate transport direction. FIG. 5 is an explanatory diagram of an ion source as the etching beam irradiation device according to the first embodiment of the present invention. FIG. 5(a) is a front view showing the beam irradiation surface of the ion source, FIG. 5(b) is a cross-sectional view taken along line AA in FIG. 5(a), and FIG. 5(c) is a graph showing the etching intensity in the longitudinal direction of the ion beam. FIG. 6 is a side view of the configuration of the etching area 300c according to this embodiment. FIG. 7 is a diagram showing the relationship between the ion beam irradiation direction and the unevenness of the substrate. FIG. 8 is an explanatory diagram of the effect of ion beam irradiation according to the first embodiment of the present invention.

[0016] <Overall configuration of the film formation equipment> The overall configuration of the film forming apparatus 1 according to this embodiment will be described with particular reference to Figure 1. The film forming apparatus 1 includes a stocker chamber 100 that accommodates substrates 10 to be subjected to film forming processing, an air pressure switching chamber 200 that switches the interior of the chamber between atmospheric and vacuum conditions, and a processing chamber 300 that performs various processes on the processing surface of the substrate 10.

[0017] The stocker chamber 100 serves to house multiple substrate transfer devices 15 capable of holding and transferring substrates 10. The stocker chamber 100 includes a mounting table 111 on which the multiple substrate transfer devices 15 are placed, and a drive mechanism for reciprocating the mounting table 111. The drive mechanism includes a drive source 121, such as a motor that rotates a ball screw, and guide rails 122 that regulate the direction of movement of the mounting table 111. However, the drive mechanism for reciprocating the mounting table 111 is not limited to this configuration, and various known technologies can be employed. In addition, the mounting table 111 is provided with multiple guide rails 112 that regulate the direction of movement of the substrate transfer devices 15. The film formation apparatus 1 is an in-line transfer type apparatus in which the substrates 10 undergo various processes while being transferred by the substrate transfer devices.

[0018] The atmospheric pressure switching chamber 200 switches the chamber from atmospheric pressure to vacuum pressure before the substrate transfer device 15 is transferred from the stocker chamber 100, which is in atmospheric pressure, to the processing chamber 300, which is in vacuum pressure. The atmospheric pressure switching chamber 200 according to this embodiment is also provided with heaters 221 and 222 for heating the substrate 10. That is, depending on the material of the substrate 10, if it is transferred to the processing chamber 300 at room temperature, various gases may be generated from the substrate 10, which may have adverse effects during film formation. Therefore, for such substrates 10, the heaters 221 and 222 heat the substrate 10 to forcibly generate gas early, thereby suppressing gas generation within the processing chamber 300. The atmospheric pressure switching chamber 200 is also provided with heaters 221 and 222 for heating the substrate 10. A guide rail 210 is provided to regulate the direction of movement of the plate transport device 15.

[0019] The processing chamber 300 includes a chamber 301 with a vacuum atmosphere inside, and guide rails 302 that regulate the direction of movement of the substrate transfer device 15. Depending on the embodiment, the substrate transfer device 15 may be moved back and forth within the processing chamber 300. As a mechanism for the reciprocating movement, various known techniques such as a ball screw drive mechanism or a rack and pinion mechanism can be applied.

[0020] The processing chamber 300 is provided with a pre-processing area 300a, a film formation area 300b, and an etching area 300c. The pre-processing area 300a is provided with a substrate processing apparatus 310 for performing pre-processing such as cleaning of the processing surface of the substrate 10 prior to the film formation process. The film formation area 300b is provided with a sputtering apparatus 320 as a film formation material irradiation apparatus for performing a film formation process on the processing surface of the substrate 10. The etching area 300c is provided with an etching beam irradiation apparatus 330 for etching the film formed on the substrate 10 by the sputtering apparatus 320. Note that the etching area 300c in FIG. 1 is simplified, and a more detailed configuration will be described for each embodiment.

[0021] The space provided in front of the substrate processing apparatus 310 in the pre-processing area 300a is a space where the substrate transfer apparatus 15 waits before pre-processing by the substrate processing apparatus 310. The film forming apparatus 1 according to this embodiment has a so-called in-line configuration in which a series of processes are performed on the substrate 10 while holding and transporting the substrate 10.

[0022] 1 is merely an example, and the film forming apparatus of the present invention is not limited to this. For example, the film forming apparatus may be configured such that the substrate 10 is held by a substrate carrier with the film-forming surface facing up (or down) and moves between multiple chambers as the substrate carrier moves.

[0023] <Overall operation of the film formation device> The control device C included in the film formation apparatus 1 controls the drive mechanism for reciprocating the mounting table 111, the air pressure in the air pressure switching chamber 200, the heaters 221 and 222, the air pressure in the processing chamber 300, the substrate processing apparatus 310, the sputtering apparatus 320, and the etching beam irradiation apparatus 330, as well as the transport of the substrate 10 by the substrate transport device 15. The control device C controls various operations of the processing flow (film formation process, etching process, etc.). The control device C can be configured, for example, by a computer having a processor, memory, storage, I / O, etc. In this case, the functions of the control device C are realized by the processor executing a program stored in the memory or storage. The computer may be a general-purpose personal computer, an embedded computer, or a programmable logic controller (PLC). Alternatively, some or all of the functions of the control device C may be configured by a circuit such as an ASIC or FPGA. In addition, the control device C may be configured to transmit control commands via wiring connected to various devices to be controlled, or may be configured to transmit control commands to various devices wirelessly.

[0024] (Processing flow) The overall operation of the film forming apparatus 1 will be described below, particularly with reference to FIG.

[0025] <<Preparation process>> The stocker chamber 100 accommodates a plurality of substrate transfer devices 15, each holding a substrate 10. Of these, the substrate transfer device 15 holding the substrate 10 to be processed is transferred from the stocker chamber 100 to the atmospheric pressure switching chamber 200 (step S101). In the atmospheric pressure switching chamber 200, a depressurization operation is performed, and the interior of the chamber is switched from atmospheric state to vacuum state. In addition, the substrate 10 Depending on the material, a heat treatment is simultaneously performed on the substrate 10 (step S102). For example, the substrate 10 is heated to about 100°C to 180°C by about ten minutes of heat treatment. The substrate 10 is then transferred from the pressure switching chamber 200 to the pre-treatment area 300a of the processing chamber 300 (step S103). In the pre-treatment area 300a, the substrate processing apparatus 310 performs surface treatment on the processing surface of the substrate 10 by irradiating it with an ion beam (step S104).

[0026] <<Film forming process>> Next, the substrate 10 is transported to the film formation area 300b (step S105), where the processing surface of the substrate 10 is subjected to sputtering processing by the sputtering device 320 (step S106). The sputtering device 320 is a well-known technique and will not be described in detail here, but it is equipped with a target that emits film formation material when a high voltage is applied. The target may be flat or cylindrical and rotatably configured.

[0027] <<Etching process>> The substrate 10 that has been subjected to the film formation process is transported to the etching area 300c (step S107), where it is subjected to etching by the etching beam irradiation device 330 (step S108).

[0028] 1, in which the stocker chamber 100 and the pressure switchable chamber 200 provided at one end of the processing chamber 300 perform the loading and unloading of the substrate transfer device 15. For example, the stocker chamber 100 and the pressure switchable chamber 200 provided at one end of the processing chamber 300 may be configured to perform only the loading operation of the substrate transfer device 15, and the other end of the processing chamber 300 may be configured to have an pressure switchable chamber for unloading the substrate transfer device 15 and a stocker chamber for storing processed substrates 10. The configuration for loading and unloading the substrates may be designed appropriately depending on the transport path of the substrates 10 during etching processing.

[0029] The film forming apparatus 1 according to this embodiment can be applied to, for example, various electrode formation processes involving pretreatment. Specific examples include the formation of plating seed films for FC-BGA (Flip-Chip Ball Grid Array) mounting substrates and metal laminated films for SAW (Surface Acoustic Wave) devices. Other examples include the formation of conductive hard films for LED bonding sections and terminal films for MLCCs (Multi-Layered Ceramic Capacitors). The apparatus can also be applied to the formation of electromagnetic shielding films for electronic component packages and terminal films for chip resistors. While the size of the substrate 10 is not particularly limited, this embodiment uses a substrate 10 measuring approximately 200 mm × 200 mm. The substrate 10 can be made of any material, such as polyimide, glass, silicon, metal, or ceramic.

[0030] As a modified example, the processes of steps S107 to S108 may be repeated. In this case, after the etching process of S108, the control device C determines whether the number of sputtering times X has reached a predetermined number of times N. If N has not been reached, the substrate 10 is returned to the film formation area 300b, where the film formation process and the etching process are performed again. After the film formation process and the etching process have been repeated N times, the processed substrate 10 is sent to the air pressure switching chamber 200, where the vacuum state is switched to atmospheric state, and then the processed substrate 10 is carried out into the stocker chamber 100.

[0031] According to this modification, the unevenness of the film thickness formed by one sputtering is eliminated by the etching process immediately after the sputtering. Then, by repeating the sputtering and etching process, the film thickness gradually increases, so the thickness of the formed film can be made uniform. Also, here, if further sputtering is performed from the state of FIG. 20(b), If the sputtering process proceeds too quickly, the film 20 deposited on the top surface 11a may overhang. As a result, a gap (void) may be formed between the bottom portion of the convex shape of the film 20 deposited on the bottom surface 12a and the overhanging portion of the film 20 deposited on the top surface 11a. However, according to this modification, sputtering and etching processes are repeated alternately, so that the formation of gaps in the film 20 can be prevented. The method of repeatedly performing processes in the etching area 300c and the film formation area 300b, as in this modification, can also be applied to each of the embodiments described below.

[0032] <Substrate processing apparatus and etching beam irradiation apparatus> In particular, the substrate processing apparatus 310 and the etching beam irradiation apparatus 330 will be described with reference to Figures 3 and 4. The substrate processing apparatus 310 and the etching beam irradiation apparatus 330 have the same basic configuration. That is, the substrate processing apparatus 310 and the etching beam irradiation apparatus 330 are apparatuses for performing cleaning or etching processes on the surface (processing surface) of a substrate by irradiating it with an ion beam. Therefore, only the etching beam irradiation apparatus 330 will be described here. The etching beam irradiation apparatus 330 includes an ion source 331 and a high-voltage power supply 336 that applies a voltage to the ion source 331. Figure 4 also shows an ion beam 341 irradiated from the ion source 331.

[0033] The chamber 301 in the processing chamber 300 is an airtight container, and its interior is maintained in a vacuum state (or reduced pressure state) by an exhaust pump 303. By opening a gas supply valve 304 and supplying gas into the chamber 301, the gas atmosphere (or pressure zone) can be appropriately changed to an appropriate gas atmosphere for the processing. The entire chamber 301 is electrically grounded. The substrate transfer device 15 is configured to be movable on guide rails 302 laid on the bottom surface of the chamber 301 while holding the substrate 10 in a vertical position so that the processing surface of the substrate 10 is aligned vertically. The guide rails 302 extend in a direction parallel to the surface of the substrate 10, and the substrate transfer device 15 moves in a direction parallel to the surface of the substrate 10 by a drive mechanism (not shown).

[0034] Substrate transport device 15 includes a holding member (substrate holder) 15a that holds substrate 10, a support member (transport carrier) 15b that supports holding member 15a, a connection member 15c that mechanically connects holding member 15a and support member 15b while electrically insulating them, and a rolling element 15d provided at the lower end of support member 15b. Rolling element 15d rolls on guide rail 302, causing substrate transport device 15 to move along guide rail 302. Here, the surface where substrate 10 is held by holding member 15a is referred to as holding surface F.

[0035] 3 shows the etching beam irradiation device 330 and the substrate transport device 15 during the etching process in which etching is performed while the substrate transport device 15 is moving in the Y direction. The distance between the ion source 331 and the substrate 10 is set to about 100 to 200 mm. The high-voltage power supply 336 is configured to apply an anode voltage (up to several kV) to the ion source 331.

[0036] <Ion source> In particular, the ion source 331 will be described in more detail with reference to FIG. 5 . The ion source 331 includes a cathode 332, a beam irradiation surface 333, an anode 334, and a permanent magnet 335. In this embodiment, the cathode 332 also serves as the housing of the ion source 331. The cathode 332 and the anode 334 are each made of stainless steel, and are electrically insulated from each other. The cathode 332 is fixed to the chamber 301, and is thereby electrically grounded. Meanwhile, the anode 334 is connected to a high-voltage power supply 336. In this configuration, when a high voltage is applied from the high-voltage power supply 336 to the anode 334, an ion beam is emitted from an exit opening provided on the beam irradiation surface 333 of the housing (cathode 332). The principle of the ion source 331 can be divided into two types: one in which ions are generated inside the housing by introducing gas from the rear side of the housing, and one in which atmospheric gas present outside the housing is ionized. 4 shows the latter case, in which gas is supplied into chamber 301 by opening gas supply valve 304. The gas may be argon gas, oxygen gas, nitrogen gas, or the like.

[0037] The ion source 331 according to this embodiment has a beam irradiation surface 333 having a long and narrow shape (line or track shape) of approximately 300 to 400 mm x approximately 70 mm, such that the opening of the exit aperture has a longitudinal direction and a lateral direction. This configures the ion source 331 as a linear ion source. The ion source 331 is disposed so that the longitudinal direction of the exit aperture intersects with the transport direction of the substrate 10. By using such a vertically elongated ion source 331, the ion beam can be irradiated over the entire area of ​​the substrate 10 in the longitudinal direction (the direction perpendicular to the transport direction). In other words, an ion beam irradiation region can be set that spans the area between a point located on the upper edge of the substrate 10 and a point located on the lower edge in the Z direction perpendicular to the transport direction. By transporting the substrate 10 through this ion beam irradiation region, the entire surface of the substrate 10 can be irradiated with the beam in a single beam scan along the transport direction. As a result, the surface treatment can be performed at a higher speed (improved productivity).

[0038] FIG. 5(c) shows the longitudinal etching intensity of the ion beam emitted from the ion source 331. As shown in the figure, the longitudinal intensity of the ion beam is not uniform, but rather has a distribution in which the intensity is either higher in the central portion as shown by the dashed line L2 or lower in the central portion as shown by the solid line L1, depending on the magnetic field design of the ion source 331. A bias in the distribution of etching intensity as shown in FIG. 5(c) is undesirable because it causes unevenness in the amount of etching. Therefore, by using a beam irradiation surface 333 that is approximately 1.5 to 2 times the size of the substrate 10, the distribution of etching intensity can be made uniform.

[0039] <Surface treatment process using substrate treatment equipment> In the substrate processing apparatus 310 configured as described above, when the substrate 10 is transferred to the pre-processing area 300a of the processing chamber 300, the control device C controls the high-voltage power supply to initiate beam irradiation from the ion source. In this state, the control device C moves the substrate transfer device 15 at a constant speed to pass the substrate 10 through the ion beam. In this manner, the surface of the substrate 10 is irradiated with the ion beam, and the front side of the substrate 10 is subjected to surface treatment (cleaning treatment). By adopting such a beam scanning configuration, the entire substrate can be processed with an ion beam having an irradiation range smaller than the area of ​​the substrate 10, thereby enabling a miniaturization of the ion source and, ultimately, the overall apparatus. Furthermore, by adopting a configuration in which the substrate 10 is supported with the processing surface of the substrate 10 aligned vertically and the ion beam is irradiated horizontally relative to the processing surface, particles removed by etching fall due to gravity and do not remain on the processing surface of the substrate 10, thereby advantageously preventing uneven processing due to remaining particles.

[0040] <Etching process> The etching process will be described. First, referring to FIG. 20, film formation on a substrate with irregularities will be described. FIG. 20(a) shows sputtering performed by a sputtering device 320 on a substrate 10 having protrusions 11 and recesses 12, with arrows indicating the film formation material being emitted from the target of the sputtering device 320. FIG. 20(b) shows a film 20 formed on the surface of the substrate 10 as a result of sputtering. As described above, the present inventors have discovered a problem in film formation on an irregular substrate: a film is less likely to form on the sidewalls 13 than on the top surfaces 11a of the protrusions 11 or the bottom surfaces 12a of the recesses 12, i.e., sidewall coverage is poor. Therefore, they investigated the possibility of performing an ion beam etching process on a film formed on an irregular substrate to achieve a uniform film thickness.

[0041] The etching process will be described in more detail with reference to Figures 6 and 7. The film formation method and film formation apparatus are preferably used when forming a thin film on the surface of a substrate 10 on which protrusions 11 and recesses 12 are formed. The etching process of this embodiment is preferably used regardless of the direction of the unevenness of the substrate 10. For example, the unevenness may be formed by parallel grooves on the substrate 10, or by unevenness formed in the vertical and horizontal directions, or by curved grooves rather than linear grooves. A complex shape may also be formed by combining multiple linear or curved unevennesses. Furthermore, the substrate 10 may have holes. In the etching process of this embodiment, even when there are various unevennesses as described above, etching is performed in such a way that ion beams are obliquely irradiated from multiple directions, thereby making it possible to achieve a uniform film thickness during film formation.

[0042] FIG. 6 is a side view showing the configuration of the etching area 300c in this embodiment. The substrate 10 moves through the etching area 300c while being irradiated with an ion beam. The substrate 10 is provided with an orientation flat 10a as a marker. The holding member 15a of the substrate transfer device 15 is omitted from the figure, but for convenience, the trajectory of the outer periphery of the holding member 15a is shown by a dashed line 15a'. In the following description, for convenience, the normal to the holding surface F of the holding member 15a that holds the transferred substrate 10 will be referred to as the "normal line N."

[0043] As shown in the figure, four ion sources 331a to 331d are provided in the etching area 300c. First, the installation angle of each ion source will be described. When viewing the YZ plane from the positive side of the X direction (i.e., when viewed directly on the paper surface of FIG. 6), the angle between the longitudinal direction of the ion source 331a and the Y direction, which is the transport direction, of the ion source 331a and the ion source 331b is different from the angle between the longitudinal direction of the ion source 331c and the Y direction of the ion source 331d. In this embodiment, the longitudinal directions of the ion sources 331a and 331b are inclined at −45° on the paper surface with respect to the Y direction. Furthermore, the longitudinal directions of the ion sources 331c and 331d are inclined at 45° on the paper surface with respect to the Y direction. The longitudinal length of each ion source is designed to include the upper and lower ends of the substrate 10 in the Z direction when installed with such an inclination angle. As a result, the entire surface of the substrate 10 is irradiated with an ion beam as the substrate 10 moves and passes through the irradiation areas of each ion source. The passage of ion source 331a through the irradiation region is referred to as the first passage, and the passages of ion source 331b through ion source 331d through the irradiation region are referred to as the second through fourth passages.

[0044] Here, the angle between the substrate transport direction and the longitudinal direction of the ion source is set to 45°, but is not limited to this. For example, the angle may deviate from 45°, or the angle may differ for each ion source. As long as the substrate 10 can be irradiated with ion beams from multiple directions, the angle between the transport direction and the longitudinal direction of the ion source is not important. However, since the size of the ion source must be increased as the transport direction and the longitudinal direction of the ion source become closer to being parallel, the angle is typically set to a range of 45°±15°. More preferably, the angle is set to a range of 45°±5°.

[0045] Next, the irradiation direction of the ion beam from each ion source will be described. The irradiation direction (first irradiation direction) of the ion beam 341a from the ion source 331a is different from the irradiation direction (second irradiation direction) of the ion beam 341b from the ion source 331b. Here, the cross section taken along line BB in FIG. 6, i.e., the plane perpendicular to the holding surface F and perpendicular to the longitudinal direction of the ion source 331a and the ion source 331b, is defined as the first plane. In the first plane, the first irradiation direction and the second irradiation direction are inclined with respect to the normal line N so as to be symmetrical with respect to the normal line N. That is, the irradiation directions of the ion beam in the first pass and the second pass are different from each other.

[0046] Similarly, the irradiation direction of the ion beam 341c from the ion source 331c (third irradiation direction) is the same as the irradiation direction of the ion beam 341d from the ion source 331d (fourth irradiation direction). ) is different from the above. The cross section taken along line CC in FIG. 6, i.e., the plane perpendicular to the holding surface F and perpendicular to the longitudinal direction of the ion source 331c and the ion source 331d, is defined as the second plane. In the second plane, the third irradiation direction and the fourth irradiation direction are inclined with respect to the normal line N so as to be symmetrical with respect to the normal line N. That is, the irradiation directions of the ion beam in the third pass and the fourth pass are different from each other. In this embodiment, the irradiation directions of the first pass to the fourth pass are different from each other. However, there may be cases where the ion beam is irradiated from the same irradiation direction during multiple passes. There should be at least one combination of irradiation from different irradiation directions during multiple passes.

[0047] By setting the installation angles of the four ion sources 331a to 331d and the irradiation directions of the ion beams 341a to 341d as described above, it becomes possible to irradiate the entire surface of the substrate 10 with ion beams obliquely from four directions. Figure 7 shows the change in the ion beam irradiation direction as the uneven substrate 10 moves through the etching area 300c. Here, a cross section of the substrate 10 taken along line DD in Figure 6 is shown.

[0048] When the substrate 10 is carried into the etching area 300c, it first passes through an irradiation area of ​​an ion beam 341a from an ion source 331a. At this time, as shown in FIG. 7(a), the ion beam 341a is irradiated to the substrate 10 at an angle α from the normal N. Next, the substrate 10 passes through an irradiation area of ​​an ion beam 341b from an ion source 331b. At this time, as shown in FIG. 7(b), the ion beam 341b is irradiated to the substrate 10 at an angle β from the normal N. In this embodiment, the angles α and β are the same, and the irradiation angles of the ion beam 341a and the ion beam 341b are designed to be axisymmetric with respect to the normal N.

[0049] Next, the substrate 10 passes through an irradiation area of ​​an ion beam 341c from an ion source 331c. At this time, as shown in FIG. 7(c), the ion beam 341c is irradiated at an angle from the back side to the front side on the paper. Next, the substrate 10 passes through an irradiation area of ​​an ion beam 341d from an ion source 331d. At this time, as shown in FIG. 7(d), the ion beam 341 is irradiated at an angle from the front side to the back side on the paper. In this embodiment, the irradiation angles of the ion beam 341c and the ion beam 341d are designed to be symmetrical with respect to the normal line N.

[0050] The angle α between the ion beam 341a and the normal N and the angle β between the ion beam 341b and the normal N are preferably about 30°±10°. If the angle α or the angle β is too small, the effect obtained will be similar to that obtained when a normal etching process is performed from the normal direction. On the other hand, if the angle α or the angle β is too large, the ion beam will not reach the bottom of the recess 12. However, the angle is not limited to this and can be determined appropriately depending on the shape and pitch of the irregularities, the width of the bottom of the recess, and the height of the sidewall. The same applies to the angles that the ion beams 341c and 341d make with the normal N. Furthermore, from the viewpoint of improving the uniformity of the film thickness after the etching process, it is preferable to set α=β when the cross-sectional shapes of the protrusions 11 and the recesses 12 are symmetrical. However, the angles α and β do not necessarily have to be the same.

[0051] 8A and 8B are explanatory diagrams of a film formed by ion beam irradiation according to Example 1. Fig. 8A is a diagram for schematically explaining an example of the uneven shape on the surface of the substrate 10, showing a state in which the film 20 has been removed. The substrate 10 in the illustrated example has grid-shaped recesses 12 formed lengthwise and widthwise. Ion beams 341a to 341d are irradiated onto this substrate 10 from four directions, changing their direction by 90 degrees each time.

[0052] 8(b) is a cross-sectional view corresponding to the EE line in FIG. 8(a). FIG. 8(b) shows the difference between the top of the protrusion 11 and the bottom of the recess 12 when sputtering is performed on the substrate 10 having protrusions and recesses. This shows that it is difficult to form a film 20 on the side wall portion 13. However, by performing an etching process on the transported substrate 10 using the configuration of this embodiment, the entire surface of the substrate 10 can be irradiated with ion beams 341a to 341d obliquely (at an inclination angle relative to the normal line N) from four directions.

[0053] When the ion beam is irradiated onto the film 20, the film 20 is gradually removed perpendicular to the direction of the ion beam irradiation. Therefore, when the ion beam 341a is irradiated onto the substrate 10, the film 20 formed on the top surfaces of the convex portions 11 is removed mainly near the right side in FIG. 8(b) (reference symbol 20a1). Similarly, the film 20 formed on the bottom surfaces of the concave portions 12 is removed mainly near the left side in FIG. 8(b) (reference symbol 20b1). Note that some of the material removed by etching adheres to the film and becomes part of the film. Since the material tends to adhere particularly to portions not irradiated with the etching beam, the thinner portions tend to become thicker due to the adhered material. Subsequently, when the ion beam 341b is irradiated onto the substrate 10, the film 20 formed on the top surfaces of the convex portions 11 is removed mainly near the left side in FIG. 8(b) (reference symbol 20a2). Similarly, the film 20 formed on the bottom surfaces of the concave portions 12 is removed mainly near the right side in FIG. 8(b) (reference symbol 20b2). In this case, too, a part of the film-forming material that has been scraped off adheres to the film and becomes part of it.

[0054] Thereafter, ion beams 341c and 341d similarly scrape away the film formed on the top surfaces of convex portions 11 and the film formed on the bottom surfaces of concave portions 12, and some of the film adheres to the sidewalls and becomes part of the film. Figure 8(c) is a cross-sectional view of substrate 10 when the etching process is completed after irradiation of ion beams from four directions, and the film thickness of film 20 is now uniform compared to before the etching process. In other words, the relative film thickness deficiency on the sidewalls has been resolved, and sidewall coverage has improved.

[0055] <Effects> According to the film forming method and film forming apparatus of this embodiment, after a film is formed by sputtering, etching is performed from multiple directions relative to the substrate transport direction. As a result, thicker film portions are removed and thinner film portions are thickened. This flattens the film surface and makes the film thickness uniform.

[0056] In this example, etching was performed from four directions, but this is not limiting. For example, depending on the shape and size (width and height) of the irregularities on the substrate, other directions may be used, such as ion beam irradiation from three directions at 120° intervals or ion beam irradiation from six directions at 60° intervals. In this example, ion beam irradiation was performed four times at angles changed by 90°, but the angles do not have to be exactly 90° each; for example, a deviation of about ±15° from 90° may be acceptable. More preferably, the angles of the four ion beam irradiations should be approximately 90° apart. "Approximately 90°" refers to an angle range close to 90° that does not significantly affect the effect of etching from multiple directions, typically 90° ±5°.

[0057] In addition, although sputtering and etching were performed once each in this embodiment, the combination of sputtering and etching may be repeated multiple times. This allows the overall film thickness to be gradually increased. Furthermore, by repeating sputtering and etching a certain number of times or more, a film 20 with a flat upper surface can be formed. Of course, the apparatus of this embodiment can be used not only for substrates after film formation by sputtering or substrates with irregularities, but also for general procedures in which etching is performed by irradiating ion beams from multiple directions.

[0058] Example 2 9 and 10, a second embodiment of the present invention will be described. In the first embodiment, the substrate 10 is irradiated with ion beams from four directions while passing through the etching area 300c once. In this embodiment, etching beams are irradiated from four directions while the substrate 10 moves back and forth within the etching area 300c. The basic configuration and operation are the same as in the first embodiment, so the same components are given the same reference numerals and their description will be omitted.

[0059] As shown in FIG. 9(a), two ion sources 331e and 331f are provided in the etching area 300c of this embodiment. First, the installation angle of each ion source will be described. When viewed from the front of the drawing, the angle between the longitudinal direction of the ion source 331e and the transport direction is different from the angle between the longitudinal direction of the ion source 331f and the transport direction. In this embodiment, the longitudinal direction of the ion source 331e is inclined at −45° with respect to the transport direction, and the longitudinal direction of the ion source 331f is inclined at 45° with respect to the transport direction. As a result, when the substrate 10 passes through the irradiation areas of each ion source while moving, the entire surface of the substrate 10 is irradiated with an ion beam. In other respects, the relationship between the substrate transport direction and the angle between the longitudinal directions of the ion sources is the same as in the first embodiment.

[0060] Next, the direction of ion beam irradiation from each ion source will be described. In Fig. 9(a), the irradiation direction of ion beam 341e from ion source 331e is downward and left on the page, and is obliquely irradiated with respect to normal line N. Moreover, the irradiation direction of ion beam 341f from ion source 331f is upward and left on the page, and is obliquely irradiated with respect to normal line N.

[0061] In FIG. 9(a), after the substrate 10 has passed through the etching area 300c from bottom to top, the substrate transport device 15 transports the substrate 10 in the opposite direction (from top to bottom) as shown in FIG. 9(b). The ion beam irradiation direction at this time will be described. The etching beam irradiation device 330 of this embodiment is equipped with a variable mechanism that changes the orientation of the ion source 331 to vary the irradiation direction of the ion beam 341. The variable mechanism can switch the irradiation direction of the ion beam 341 from an oblique direction (downward and rightward in the drawing) with respect to the substrate 10 as shown in FIG. 10(a) to the opposite direction (downward and leftward in the drawing) as shown in FIG. 10(b). The variable mechanism can be configured, for example, to include a motor that rotates the rotation shaft of the ion source 331 and a bearing for the rotation shaft. However, the variable mechanism is not limited to this, and various known techniques can be used. Note that the substrate processing apparatus 310 does not require such a variable mechanism. Of course, for some technical reason, the substrate processing apparatus 310 may also be provided with a variable mechanism for varying the irradiation direction of the ion beam.

[0062] In Figure 10(b), which shows the state after the ion beam irradiation direction has been switched, the irradiation direction of the ion beam 341f from the ion source 331f is switched to the lower right on the page (indicated by symbol 341f'), and the irradiation direction of the ion beam 341e from the ion source 331e is switched to the upper right on the page (indicated by symbol 341e').

[0063] Considering the irradiation direction of the ion beam in a cross section including the normal N of the substrate 10, when the cross section is divided into a first side and a second side with the normal N as a boundary, it can be said that the variable mechanism is capable of switching between a first state in which the irradiation direction is tilted from the normal N so that the ion beam 341e of the ion source 331e is irradiated onto the first side, and a second state in which the irradiation direction is tilted from the normal N so that the ion beam 341e is irradiated onto the second side. The same applies to the ion source 331f.

[0064] In this embodiment, the ion beam irradiation directions from the two ion sources 331e and 331f are different from each other with respect to the transport direction, and the ion beam irradiation direction can be switched by a variable mechanism. Furthermore, the substrate transport device 15 transports the substrate 10 so that it travels back and forth through the etching area 300c. In this embodiment, by combining the back and forth transport of the substrate 10 with the change in the ion beam irradiation direction, the substrate 10 can be irradiated with ion beams from four directions to perform etching. As a result, even if the substrate has an uneven shape, Even for the plate 10, it is possible to make the film thickness uniform on the top surface, bottom surface, and sidewall portion. Comparing this embodiment with Example 1, the etching beam irradiation device 330 requires a variable mechanism. Furthermore, since the substrate 10 needs to be moved back and forth, the configuration of the substrate transport device 15 and the transport path of the substrate 10 may become complicated. Furthermore, the takt time may become longer. On the other hand, the number of irradiation devices themselves can be reduced, which has the effect of reducing costs and the installation space of the device.

[0065] Example 3 Embodiment 3 of the present invention will be described with reference to Figure 11. Since the basic configuration and operation are the same as those of embodiment 2, the same components are denoted by the same reference numerals and their description will be omitted. The ion source 331 of this embodiment differs from embodiment 2 in the mechanism for varying the ion beam irradiation direction.

[0066] As shown in FIG. 11(a), two ion sources 331g and 331h are provided in the etching area 300c of this embodiment. First, the installation angle of each ion source will be described. When viewed from the front, in the state shown in FIG. 11(a), the longitudinal directions of the ion sources 331g and 331h are inclined at −45° with respect to the transport direction. The etching beam irradiation device 330 of this embodiment is equipped with an ion source rotation mechanism 370 (rotation device) that rotates the ion sources 331g and 331h by 90° in the YZ plane (rotation is indicated by arrow R). FIG. 11(b) shows the state after rotation by the ion source rotation mechanism 370, where the longitudinal directions of the ion sources 331g and 331h are inclined at 45° with respect to the transport direction. The ion source rotation mechanism 370 may be configured, for example, to include a base that supports the etching beam irradiation device 330 including the ion sources 331g and 331h, and a rotation shaft and drive mechanism that rotate the base in the YZ plane. However, the rotation mechanism is not limited to this, and various known technologies may be used. It should be noted that the substrate processing apparatus 310 does not need to be provided with such a rotation mechanism. Of course, depending on some technical reason, the substrate processing apparatus 310 may also be provided with a rotation mechanism.

[0067] With this configuration, the irradiation direction of the ion beam 341g from the ion source 331g in Fig. 11(a) is downward and left on the page, and the irradiation direction of the ion beam 341h from the ion source 331h is upward and right on the page. Also, the irradiation direction of the ion beam 341g' from the ion source 331g in Fig. 9(b) is downward and right on the page, and the irradiation direction of the ion beam 341h' from the ion source 331h is upward and left on the page.

[0068] Furthermore, as in Example 2, the substrate transfer device 15 can reciprocate the substrate 10. In this way, in this example, by combining the reciprocating transfer of the substrate 10 with a mechanism that rotates the ion source to change the irradiation direction of the ion beam, the substrate 10 can be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to make the film thickness uniform on the top surface, bottom surface, and sidewall portion. Compared to Example 1, this example requires an ion source rotation mechanism. Furthermore, since the substrate 10 needs to be reciprocated, the configuration of the substrate transfer device 15 and the transfer path of the substrate 10 may become complicated. Furthermore, the takt time may become longer. On the other hand, the number of irradiation devices themselves can be reduced, which has the effect of reducing costs and the installation space of the device.

[0069] Example 4 Embodiment 4 of the present invention will be described with reference to Figure 12. The basic configuration and operation are the same as those of Embodiments 2 and 3, so the same components are given the same reference numerals and their description will be omitted. The etching beam irradiation device 330 of this embodiment is a combination of Embodiments 2 and 3 in terms of the mechanism for varying the ion beam irradiation direction.

[0070] As shown in FIG. 12(a), an ion source 331i is provided in the etching area 300c of this embodiment. First, the installation angle of the ion source will be described. When viewed from the front on the paper, in the state shown in FIG. 12(a), the longitudinal direction of the ion source 331i is inclined at −45° with respect to the transport direction. When the substrate 10 is transported upward in this state, an ion beam 341i1 is irradiated from the upper right direction of the paper.

[0071] The etching beam irradiation device 330 of this embodiment, like that of the second embodiment, is provided with a variable mechanism that changes the irradiation direction of the ion beam 341. When the transportation of the substrate 10 is completed in Fig. 12(a), the variable mechanism operates as shown by the arrow S1, and the irradiation direction of the ion beam 341 changes. When the substrate 10 is transported downward in the state of Fig. 12(b), the ion beam 341i2 is irradiated from the lower left direction of the page.

[0072] The etching beam irradiation device 330 of this embodiment further includes a rotation mechanism that rotates the ion source 331 by 90° in the YZ plane (indicated by arrow R), as in the third embodiment. Fig. 12(c) shows the state after rotation by the rotation mechanism, with the longitudinal direction of the ion source 331i tilted at 45° with respect to the transport direction. When the substrate 10 is transported upward in this state, the ion beam 341i3 is irradiated from the lower right of the page.

[0073] Next, the variable mechanism changes the irradiation direction of the ion beam 341 again as shown by the arrow S1, resulting in the state shown in Fig. 12(d). In this state, when the substrate 10 is transported downward in the plane of the drawing, the ion beam 341i4 is irradiated from the upper left direction of the plane of the drawing.

[0074] Furthermore, as in Examples 2 and 3, the substrate transport device 15 moves the substrate 10 back and forth. Even in the configuration of this example, the substrate 10 can be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to achieve a uniform film thickness on the top surface, bottom surface, and sidewall portion. In this example, the etching beam irradiation device 330 requires a mechanism for varying the irradiation angle and a mechanism for rotating the ion source in the longitudinal direction. Furthermore, since the substrate 10 needs to be moved back and forth, the configuration of the substrate transport device 15 and the transport path of the substrate 10 may become complicated. Furthermore, the takt time may become longer. On the other hand, since the number of irradiation devices is one, there is a reduction in costs and the installation space of the device.

[0075] Example 5 Example 5 of the present invention will be described with reference to Figure 13. In the description of this example, the same components as those of Examples 1 to 4 are given the same reference numerals, and their description will be omitted. In this example, the substrate surface to be deposited faces upward in the Z direction, and the etching ion beam is irradiated from above in the Z direction. That is, the substrate 10 moves within the XY plane. This configuration can be realized by a planar movement mechanism in which a substrate carrier holding the substrate 10 moves while being supported by rails. Such an in-line movement mechanism comprising a substrate carrier and its drive mechanism is known, and therefore a detailed description will be omitted.

[0076] In this embodiment, the etching area 300c includes a first etching area 300c1 where the substrate 10 is transported in the Y direction, a second etching area 300c2 where the substrate 10 is transported in the X direction, and a carry-out area 300d where the substrate 10 is transported in the Y direction. The substrate transport device 15 in this embodiment changes the movement direction of the substrate 10 without changing its orientation in the XY plane. In other words, the substrate transport device 15 also serves as a substrate direction changing mechanism that changes the transport direction of the substrate 10 from the Y direction to the X direction and from the X direction to the Y direction while maintaining the front-to-back direction of the substrate 10 (keeping the orientation of the orientation flat 10a in the XY plane constant).

[0077] The first etching area 300c1 is provided with ion sources 331j and 331k. The longitudinal direction of the ion sources 331j and 331k is perpendicular to the transport direction (Y direction) of the substrate 10. The longitudinal lengths of the ion sources 331j and 331k are designed so that the irradiation areas of the ion beams 341j and 341k include both ends of the substrate 10 in the X direction. The irradiation directions of the ion beams 341j and 341k are fixed obliquely with respect to the substrate 10. As a result, the ion beam 341j irradiates the substrate 10 from the front side, and the ion beam 341k irradiates the substrate 10 from the rear side. As the substrate 10 passes through this first etching area 300c1, the entire surface of the substrate 10 is irradiated with the ion beams from the front and rear.

[0078] Similarly, ion sources 331l and 331m are provided in the second etching area 300c2. The longitudinal direction of the ion sources 331l and 331m is perpendicular to the transport direction (X direction) of the substrate 10. The longitudinal lengths of the ion sources 331l and 331m are designed so that the irradiation areas of the ion beams 341l and 341m include both ends of the substrate 10 in the Y direction. The irradiation directions of the ion beams 341l and 341m are fixed obliquely with respect to the substrate 10. As a result, the ion beam 341l is irradiated onto the substrate 10 from the right side, and the ion beam 341m is irradiated onto the substrate 10 from the left side. As the substrate 10 passes through this first etching area 300c2, the entire surface of the substrate 10 is irradiated with the ion beams from both the left and right sides.

[0079] In the configuration of this embodiment, the substrate 10 can be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to achieve a uniform film thickness on the top surface, bottom surface, and sidewalls. In this embodiment, the substrate 10 moves within the XY plane, but it may also move within the YZ plane as in the previous embodiments. It is sufficient that the direction of movement of the substrate 10 can be changed without changing the front-to-back direction of the substrate 10 within the apparatus, and that the ion beam can be irradiated from multiple directions onto the moving substrate. Furthermore, although the longitudinal direction of the ion source is perpendicular to the direction of movement of the substrate 10, this is not necessarily limited to perpendicular, and it is sufficient that the entire surface of the substrate 10 can be irradiated with an ion beam.

[0080] Example 6 Sixth embodiment of the present invention will be described with reference to Fig. 14. In the description of this embodiment, the same components as those in the fifth embodiment are given the same reference numerals, and the description thereof will be omitted.

[0081] In the etching area 300c of this embodiment, the substrate 10 is transported in the Y direction. The etching area 300c includes a first etching area 300c1 and a second etching area 300c2. A rotation area 300c3 is provided between the first etching area 300c1 and the second etching area 300c2. The rotation area 300c3 includes an in-plane rotation mechanism 380 that rotates the substrate 10 by 90°. Any existing technology, such as a robot arm, can be used to transfer the substrate 10 between the substrate transport device 15 and the in-plane rotation mechanism 380. Alternatively, the in-plane rotation mechanism 380 may be provided with a rail that is continuous with the substrate carrier guide rail of the substrate transport device 15.

[0082] Ion sources 331n and 331o are provided in the first etching area 300c1. The longitudinal direction of the ion sources 331n and 331o is perpendicular to the transport direction of the substrate 10. The longitudinal lengths of the ion sources 331j and 331k are designed so that the irradiation areas of the ion beams 341n and 341o include both ends of the substrate 10 in the X direction. The irradiation directions of the ion beams 341n and 341o are fixed obliquely with respect to the substrate 10. As a result, the ion beam 341n irradiates the substrate 10 from the front side, and the ion beam 341o irradiates the substrate 10 from the rear side. As the substrate 10 passes through this first etching area 300c1, the entire surface of the substrate 10 is irradiated with the ion beams from the front and rear. Next, the in-plane rotation mechanism 380 rotates the substrate 10 by 90° (arrow T).

[0083] Similarly, ion sources 331p and 331q are provided in the second etching area 300c2. The installation directions of the ion sources 331p and 331q and the irradiation directions of the ion beams 341p and 341q are designed to be the same as those of the first etching area 300c1. When the substrate 10 is rotated by 90° by the in-plane rotation mechanism 380 and passes through the second etching area 300c2, the entire surface of the substrate 10 is irradiated with the ion beam from a direction that is 90° different from that of the first etching area 300c1.

[0084] In the configuration of this embodiment, the substrate 10 can also be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to make the film thickness uniform on the top surface, bottom surface, and sidewall portion. In this embodiment, the substrate 10 moves within the XY plane as in Example 5, but it may also be configured to move within the YZ plane as in the above-mentioned embodiments. Furthermore, although the longitudinal direction of the ion source is perpendicular to the moving direction of the substrate 10, this is not necessarily limited to perpendicular, and it is sufficient that the entire surface of the substrate 10 can be irradiated with an ion beam.

[0085] Example 7 Seventh embodiment of the present invention will be described with reference to Fig. 15. In the description of this embodiment, the same components as those in the sixth embodiment are given the same reference numerals, and the description thereof will be omitted.

[0086] In the etching area 300c of this embodiment, the substrate 10 is transported back and forth in the Y direction. The etching area 300c includes a first etching area 300c1 and a rotation area 300c3 in which an in-plane rotation mechanism 380 that rotates the substrate 10 by 90° is disposed.

[0087] Ion sources 331r and 331s are provided in the first etching area 300c1. The longitudinal direction of the ion sources 331r and 331s is perpendicular to the transport direction of the substrate 10. The longitudinal lengths of the ion sources 331r and 331s are designed so that the irradiation areas of the ion beams 341r and 341s include both ends of the substrate 10 regardless of the direction in which the substrate 10 is rotated. The irradiation directions of the ion beams 341r and 341s are fixed obliquely with respect to the substrate 10. As a result, on the forward path, the ion beam 341r irradiates the substrate 10 from the front side, and the ion beam 341s irradiates the substrate 10 from the rear side. Next, the substrate 10 is rotated 90° by the in-plane rotation mechanism 380 (arrow T).

[0088] On the return path, the substrate 10 rotated by 90° by the in-plane rotation mechanism 380 passes through the first etching area 300c1, so that the entire surface of the substrate 10 is irradiated with the ion beam from a direction 90° different from that on the outward path.

[0089] In the configuration of this embodiment, the substrate 10 can also be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to make the film thickness uniform on the top surface, bottom surface, and sidewall portion. Note that although the longitudinal direction of the ion source is perpendicular to the transport direction of the substrate 10, this is not necessarily limited to being perpendicular, as long as the entire surface of the substrate 10 can be irradiated with an ion beam. For example, as shown in FIG. 16, the longitudinal direction of the ion source may be inclined at 45° with respect to the transport direction. Furthermore, this inclination angle is not limited to 45°.

[0090] Example 8 An eighth embodiment of the present invention will be described with reference to Figures 17 and 18. In the description of this embodiment, the same components as those in the seventh embodiment are given the same reference numerals, and the description thereof will be omitted.

[0091] In the etching area 300c of this embodiment, the substrate 10 is transported back and forth in the Y direction. The etching area 300c includes a first etching area 300c1. Rotation areas 300c3 and 300c4 are provided at both ends of the first etching area 300c1, and each rotation area includes an in-plane rotation mechanism 380 that rotates the substrate 10 by 90°. The two rotation areas 300c3 and 300c4 can have the same configuration.

[0092] A single ion source 331t is provided in the first etching area 300c1. The longitudinal direction of the ion source 331t is perpendicular to the transport direction of the substrate 10. The longitudinal length of the ion source 331t is designed so that the irradiation area of ​​the ion beam 341t includes both ends of the substrate 10 regardless of the direction in which the substrate 10 is rotated. The irradiation direction of the ion beam 341t is fixed at an angle relative to the substrate 10.

[0093] When etching begins, as shown in FIG. 17(a), the substrate 10 is irradiated with the ion beam 341t while being transported through the first etching area 300c1 with the orientation flat 10a facing upward and to the right. After irradiation, the in-plane rotation mechanism 380 in the rotation area 300c4 rotates the substrate 10 by 90° (arrow T1). Next, as shown in FIG. 17(b), the substrate 10 is irradiated with the ion beam 341t while being transported through the first etching area 300c1 with the orientation flat 10a facing downward and to the right. After irradiation, the in-plane rotation mechanism 380 in the rotation area 300c3 rotates the substrate 10 by 90° (arrow T2). Similarly, the 90° rotation of the substrate 10 and the ion beam irradiation are repeated in the order shown in FIG. 18(a) and FIG. 18(b).

[0094] In the configuration of this embodiment, the substrate 10 can be irradiated with an ion beam from four directions. Therefore, even if the substrate 10 has an uneven shape, it is possible to achieve a uniform film thickness on the top surface, bottom surface, and sidewalls. In this embodiment, the substrate 10 moves within the XY plane, as in the fifth embodiment. However, the substrate 10 may move within the YZ plane, as in the previous embodiments. Furthermore, although the longitudinal direction of the ion source is perpendicular to the transport direction of the substrate 10, this is not necessarily limited to being perpendicular, as long as the entire surface of the substrate 10 can be irradiated with an ion beam. For example, as shown in FIG. 19, the longitudinal direction of the ion source may be tilted at 45° with respect to the transport direction. Furthermore, this tilt angle is not limited to 45°.

[0095] (others) In the above examples, the etching beam is an ion beam. However, the etching beam is not limited to an ion beam, and a laser beam can also be used. For example, when the material of the film to be etched is an inorganic film (e.g., SiN), an oxide film (e.g., SiO2, ITO), or a metal film (e.g., Al, Cu), it is preferable to use an ion beam (an ion beam generated from a rare gas such as Ar or Xe). On the other hand, when the material of the film to be etched is an organic film (e.g., an organic compound), it is preferable to use a laser beam. In the former case, the beam diameter is relatively large, while in the latter case, the beam diameter is relatively small. Furthermore, in the latter case, it is even more effective if a photothermal conversion material is contained in the film or in the underlying layer. [Explanation of symbols]

[0096] 10...substrate, 11...protrusion, 12...recess, 15...substrate transport device, 20...film, 300...processing chamber, 300c...etching area, 330...etching beam irradiation device, 331...ion source, 341...ion beam

Claims

1. an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the irradiation device includes two ion sources, and the installation directions of the two ion sources with respect to the transport direction are different from each other; The ion source is installed in a direction such that the longitudinal direction is at an angle of 45°±5° with respect to the transport direction. An etching apparatus characterized by:

2. An irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the irradiation device includes four of the ion sources; The four ion sources are installed in different directions relative to the transport direction. An etching apparatus characterized by:

3. The installation directions of the four ion sources are different by approximately 90°.

3. The etching apparatus according to claim 2.

4. An irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the transport device is capable of reciprocating the substrate in the transport direction, the irradiation device includes two of the ion sources; the two ion sources are installed in different directions relative to the transport direction; When a cross section of the substrate including the normal line is divided into a first side and a second side with the normal line as a boundary, each of the two ion sources is switchable between a first state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the first side, and a second state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the second side. An etching apparatus characterized by:

5. The two ion sources irradiate the substrate with the ion beam in the first state while the substrate is moving in the outward direction in the transport direction, and irradiate the substrate with the ion beam in the second state while the substrate is moving in the backward direction in the transport direction.

5. The etching apparatus according to claim 4.

6. The installation directions of the two ion sources are different by approximately 90°.

6. The etching apparatus according to claim 5.

7. An irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; The ion source is installed in such a way that the longitudinal direction of the opening for irradiating the ion beam is a direction oblique to a transport direction of the substrate by a transport device, the transport device is capable of reciprocating the substrate in the transport direction, the irradiation device includes two of the ion sources; the two ion sources are installed in different directions relative to the transport direction; The installation directions of the two ion sources are different by approximately 180°. The angle of the longitudinal direction of each of the two ion sources relative to the transport direction can be changed by approximately 90°. An etching apparatus characterized by:

8. The two ion sources are configured to make different angles of the longitudinal direction with respect to the transport direction while the substrate is moving in the outward direction of the transport direction and while the substrate is moving in the return direction of the transport direction.

8. The etching apparatus according to claim 7.

9. An irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; an irradiation direction of the ion beam with respect to the substrate during the first pass and an irradiation direction of the ion beam with respect to the substrate during the second pass are different from each other; an installation direction of the ion source such that a longitudinal direction of an opening for irradiating the ion beam is oblique to a transport direction of the substrate by the transport device; the transport device is capable of reciprocating the substrate in the transport direction, when a cross section of the substrate including the normal line is divided into a first side and a second side with the normal line as a boundary, the ion source is switchable between a first state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the first side, and a second state in which the irradiation direction is inclined from the normal line so that the ion beam is irradiated onto the second side, The ion source is capable of changing the angle of the longitudinal direction with respect to the transport direction. An etching apparatus characterized by:

10. The ion source can irradiate the substrate with the ion beam from four directions by combining switching between the first state and the second state and changing the angle of the longitudinal direction with respect to the transport direction.

10. The etching apparatus according to claim 9.

11. An irradiation device including an ion source for irradiating a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; the irradiation direction of the ion beam with respect to the substrate in the first pass and the irradiation direction of the ion beam with respect to the substrate in the second pass the irradiation directions of the ion beams with respect to the substrate during the respective passes are different from each other; a rotation device that rotates the substrate in a plane parallel to the surface of the substrate outside the irradiation region of the ion beam; the transport device is capable of reciprocating the substrate in a transport direction by the transport device, The rotation device rotates the substrate after the substrate is irradiated with the ion beam while moving along the outward path in the transport direction, so that the substrate is irradiated with the ion beam from an angle different from that of the outward path in the transport direction on the return path in the transport direction. An etching apparatus characterized by:

12. The ion source is a linear ion source, in which the opening for irradiating the ion beam has the longitudinal direction.

12. The etching apparatus according to claim 1, wherein the etching apparatus is a gas-permeable gas.

13. an irradiation device including an ion source that irradiates a substrate with an ion beam for etching; a transport device that transports the substrate and causes the substrate to pass through the ion beam irradiation area a plurality of times; Equipped with an irradiation direction of the ion beam is inclined with respect to a normal to a surface of the substrate in the irradiation region; the plurality of passes of the substrate through the irradiation region includes at least a first pass and a second pass; a rotation device that rotates the substrate in a plane parallel to a surface of the substrate outside an irradiation region of the ion beam between the first pass and the second pass; When the substrate is reciprocated in the transport direction by the transport device, the rotation device rotates the substrate after the substrate is irradiated with the ion beam while moving on the outward path in the transport direction, so that the substrate is irradiated with the ion beam from an angle different from that on the outward path in the transport direction on the return path in the transport direction. An etching apparatus characterized by:

14. The ion source is a linear ion source having an opening for irradiating the ion beam in the longitudinal direction.

14. The etching apparatus according to claim 13.

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