Focused ion beam equipment

Abstract

To provide a focused ion beam device capable of preventing a deposition film from being formed thick on a surface of a specimen.SOLUTION: A focused ion beam device 100 processes a specimen S by irradiating the specimen with ion beams. The focused ion beam device includes: an FIB lens barrel 20 for irradiating the specimen S with ion beams; a nozzle 42 which blows a gas for forming a deposition film from an outlet 41 to the specimen S; a specimen stage 30 on which the specimen S is supported; a shield member 60 for disturbing a flow of the gas; and a shield member support mechanism 70 supporting the shield member 60 movably between a shield position, which is located between the outlet 41 and the specimen S supported on the specimen stage 30, and a shield member retraction position which is not located between the outlet 41 and the specimen S supported on the specimen stage 30.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a focused ion beam device. [Background technology]

[0002] Focused ion beam devices can process samples by scanning the sample surface with a focused ion beam. Furthermore, focused ion beam devices can form a deposition film on the sample surface by irradiating the sample with an electron beam or ion beam while spraying a compound gas near the sample surface. Cryo-focused ion beam devices (Cryo-FIB), which process cooled samples, can form a deposition film on the sample surface by simply spraying a compound gas onto the sample without irradiating it with an electron beam or ion beam.

[0003] Patent Document 1 discloses a focused ion beam device equipped with a gas gun for spraying a compound gas onto a sample. The gas gun includes a gas tank containing a gas source and a gas nozzle. When forming a deposition film, the gas nozzle is moved by an air cylinder from a retracted position to a height of several hundred microns from the processing point of the sample. A gas sealing plug is provided inside the gas tank, and gas can be sprayed onto the sample by opening the gas sealing plug. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-134520 Summary of the Invention [Problem to be solved by the invention]

[0005] In the gas guns described above, even if the gas tank is sealed with a gas seal plug, gas remains in the gas nozzle and leaks out from the gas nozzle. This can cause the gas leaking from the gas nozzle to reach the sample surface, unintentionally forming a thick deposition film on the sample surface that can affect observation and analysis using an electron microscope. [Means for solving the problem]

[0006] One aspect of the focused ion beam apparatus according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported on the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported on the sample stage; a nozzle support mechanism that supports the nozzle movably between a film-forming position where the gas can be sprayed onto the sample from the outlet and a nozzle retracted position different from the film-forming position; a control unit that controls the nozzle support mechanism and the shielding member support mechanism; Including, The control unit causes the nozzle support mechanism to move the nozzle from the film formation position to the nozzle retracted position, and causes the shielding member support mechanism to move the shielding member from the shielding member retracted position to the shielding position. . One aspect of the focused ion beam apparatus according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported on the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported on the sample stage; a nozzle support mechanism that movably supports the nozzle; Including, The shielding member support mechanism moves the shielding member between the shielding position and the shielding member retracted position in mechanical interlock with the movement of the nozzle. One aspect of the focused ion beam apparatus according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported on the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported on the sample stage; a detector for detecting a signal emitted from the sample; Including, The shielding member is connected to the detector.

[0007] In such a focused ion beam device, when the nozzle is not used, a shielding member can be placed between the nozzle and the sample. This reduces the amount of gas leaking from the nozzle and reaching the sample. This prevents a deposition film that is so thick that it interferes with observation and analysis using an electron microscope from being formed on the sample surface.

[0008] One aspect of the focused ion beam apparatus according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a switching mechanism for switching between a film-forming state in which the air outlet faces the sample and a retracted state in which the air outlet does not face the sample; Includes:

[0009] In such a focused ion beam device, when the nozzle is not in use, the nozzle can be retracted so that the outlet is not facing the sample. Therefore, in such a focused ion beam device, the amount of gas leaking from the nozzle and reaching the sample can be reduced. This prevents a deposition film that is thick enough to affect observation and analysis using an electron microscope from being formed on the sample surface. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a diagram showing the configuration of a focused ion beam apparatus according to a first embodiment. [Figure 2] FIG. 1 is a cross-sectional view schematically showing a gas injection device. [Figure 3] FIG. 1 is a cross-sectional view schematically showing a gas injection device. [Figure 4] FIG. 2 is a diagram for explaining the operation of the focused ion beam device. [Figure 5] FIG. 2 is a diagram for explaining the operation of the focused ion beam device. [Figure 6] FIG. 2 is a cross-sectional view schematically showing the gas injection device when the valve is closed. [Figure 7] FIG. 4 is a diagram showing a modified example of the focused ion beam apparatus according to the first embodiment. [Figure 8] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a second embodiment. [Figure 9] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a second embodiment. [Figure 10] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a third embodiment. [Figure 11] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a third embodiment. [Figure 12] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a fourth embodiment. [Figure 13] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a fourth embodiment. [Figure 14] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a fifth embodiment. [Figure 15] FIG. 10 is a diagram showing the configuration of a focused ion beam apparatus according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First embodiment 1.1. Focused ion beam device First, a focused ion beam apparatus according to the first embodiment will be described with reference to the drawings. Fig. 1 is a diagram showing the configuration of a focused ion beam apparatus 100 according to the first embodiment.

[0013] 1, the focused ion beam device 100 includes an SEM (scanning electron microscope) column 10, an FIB (focused ion beam) column 20, a sample stage 30, a cooling mechanism 32, a gas injection device 40 including a nozzle 42, a nozzle support mechanism 50, a shielding member 60, a shielding member support mechanism 70, and a control unit 80. The focused ion beam device 100 includes the SEM column 10 and the FIB column 20, and is capable of processing a sample S and observing the sample S.

[0014] The SEM column 10 irradiates the sample S with an electron beam. The SEM column 10 forms an electron probe and scans the electron probe. The SEM column 10 emits an electron beam. The SEM includes an electron gun and an electron optical system for focusing the electron beam to form an electron probe and scanning the formed electron probe. The electron beam emitted from the electron gun travels along the optical axis AS of the SEM column 10 and is irradiated onto a sample S.

[0015] In the focused ion beam device 100, an SEM image can be obtained by scanning the sample S with an electron probe and detecting electrons emitted from the sample S with an electron detector (not shown).

[0016] The FIB column 20 irradiates the sample S with an ion beam. The FIB column 20 forms and scans the ion beam. The FIB column 20 includes an ion gun that emits the ion beam and an ion optical system that focuses the ion beam and scans the focused ion beam. The ion beam emitted from the ion gun travels along the optical axis AF of the FIB column 20 and is irradiated onto the sample S. In the focused ion beam device 100, the sample S can be processed by scanning the sample S with the focused ion beam.

[0017] The sample stage 30 supports the sample S. The sample S supported by the sample stage 30 is placed in a sample chamber 102. The sample chamber 102 is evacuated by a vacuum pump (not shown) and is in a vacuum state (reduced pressure state). In the focused ion beam device 100, processing of the sample S and observation of the sample S are performed at an intersection P0 between the optical axis AS and the optical axis AF.

[0018] The sample stage 30 includes a movement mechanism for moving the sample S in the horizontal and vertical directions and a tilt mechanism for tilting the sample S. The movement mechanism and tilt mechanism are driven by a driving device such as a motor. The sample stage 30 may be configured to be able to support a sample holder that can be used in both the focused ion beam device 100 and the transmission electron microscope. In other words, the sample stage 30 may support the sample S via a sample holder that can be used in both the focused ion beam device and the transmission electron microscope.

[0019] The cooling mechanism 32 cools the sample stage 30. By cooling the sample stage 30, the sample S can be cooled. The cooling mechanism 32 includes, for example, a tube for flowing gas and a refrigerant tank for cooling the gas. The cooling mechanism 32 cools the sample stage 30 by flowing gas cooled in a refrigerant tank filled with liquid nitrogen, for example, through a tube thermally connected to the sample stage 30. Furthermore, for example, the cooling mechanism 32 may include a refrigerant tank and a heat conduction wire that thermally connects the refrigerant tank and the sample stage 30. The sample stage 30 can be cooled by connecting the refrigerant tank and the sample stage 30 with a heat conduction wire.

[0020] In this way, the focused ion beam device 100 is provided with the cooling mechanism 32 that cools the sample stage 30, and can be used as a cryo-FIB (Cryo-FIB) that can process the sample S while cooling it. Therefore, the focused ion beam device 100 can process and observe frozen biological samples, battery materials, and the like.

[0021] The gas injection device 40 sprays gas onto the sample S to form a deposition film. When forming a deposition film on a sample S at room temperature, the gas injection device 40 irradiates the sample S with an electron beam or ion beam while spraying gas onto the sample S. Secondary electrons generated in the sample S by irradiating it with the electron beam or ion beam decompose the gas into a deposition material and gas components. This causes the deposition material to adhere to the sample S, allowing a deposition film to be formed on the sample S. Also, when forming a deposition film on a cooled sample S, the sample S is sprayed with gas without irradiating it with an electron beam or ion beam. The gas adheres to the surface of the cooled sample S. This allows a deposition film to be formed.

[0022] The gas injection device 40 includes a nozzle 42 and a reservoir tank 44. The reservoir tank 44 contains a gas source. The reservoir tank 44 is located outside the sample chamber 102. The nozzle 42 is a long, thin cylindrical member, and sprays gas onto the sample S from an outlet 41 at the tip. When spraying gas onto the sample S, the nozzle support mechanism 50 positions the outlet 41 near the sample S.

[0023] The nozzle support mechanism 50 movably supports the nozzle 42. The nozzle support mechanism 50 movably supports the entire gas injection device 40, including the nozzle 42 and the reservoir tank 44. Note that the nozzle support mechanism 50 may movably support only the nozzle 42. The nozzle support mechanism 50 is, for example, a uniaxial actuator that includes a drive device such as a motor or an air cylinder, and a power transmission member such as a linear guide that connects the drive device and the nozzle 42. Note that the configuration of the nozzle support mechanism 50 is not particularly limited as long as it can movably support the nozzle 42.

[0024] The shielding member 60 is a member for obstructing the flow of gas. The shielding member 60 is, for example, a plate-shaped member. By disposing the shielding member 60 between the outlet 41 and the sample S, it is possible to obstruct the flow of gas leaking from the nozzle 42 toward the sample S. The shape and material of the shielding member 60 are not particularly limited as long as they can obstruct the flow of gas.

[0025] The shielding member support mechanism 70 movably supports the shielding member 60. The shielding member support mechanism 70 is, for example, a single-axis actuator including a drive device such as a motor or an air cylinder, and a power transmission member such as a linear guide that connects the drive device and the nozzle 42. The configuration of the shielding member support mechanism 70 is not particularly limited as long as it can support the shielding member 60 movably.

[0026] The control unit 80 controls the nozzle support mechanism 50 and the shielding member support mechanism 70. The control unit 80 includes, for example, a processor such as a CPU (Central Processing Unit) or a DSP (Digital Signal Processor), and a storage device (memory) such as a RAM (Random Access Memory) and a ROM (Read Only Memory). The storage device stores programs and data for performing various controls. The functions of the control unit 80 can be realized by having the processor execute the programs. The control unit 80 includes an input device that functions as a user interface for receiving user instructions.

[0027] 1.2. Gas injection device 2 and 3 are cross-sectional views schematically showing a gas injection device 40. As shown in Fig. 2 and Fig. 3, the gas injection device 40 includes a nozzle 42, a reservoir tank 44, and a valve 46. Fig. 2 illustrates the valve 46 in an open state, and Fig. 3 illustrates the valve 46 in a closed state.

[0028] A liquid or solid gas source 4 is contained in a reservoir tank 44. For example, a carbon compound, a tungsten compound, or a platinum compound is used as the gas source 4. The gas 2 generated from the gas source 4 is supplied from the reservoir tank 44 through a valve 46 to the nozzle 42.

[0029] A valve 46 is provided between the nozzle 42 and the reservoir tank 44. By opening the valve 46, the gas 2 can be sprayed from the nozzle 42, and by closing the valve 46, the gas 2 can be stopped.

[0030] The nozzle 42 is connected to a reservoir tank 44 via a valve 46. The nozzle 42 is a cylindrical member that blows the gas 2 from an outlet 41 onto the sample S. In the focused ion beam device 100, the reservoir tank 44 is connected to the nozzle 42 by using a thin and long nozzle 42. It can be placed at a position away from the sample S.

[0031] 1.3. Operation 1.3.1. Nozzle and Shield Operation 4 and 5 are diagrams for explaining the operation of the focused ion beam device 100. The nozzle 42 is movable between a film forming position shown in Fig. 4 and a nozzle retracted position shown in Fig. 5. In addition, the shielding member 60 is movable between a shielding member retracted position shown in Fig. 4 and a shielding position shown in Fig. 5.

[0032] The control unit 80 changes the position of the shielding member 60 depending on the position of the nozzle 42. Specifically, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position to the shielding position. Furthermore, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position to the film formation position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retracted position.

[0033] Therefore, in the focused ion beam system 100, when the nozzle 42 is moved from the film formation position to the nozzle retracted position, the shielding member 60 automatically moves from the shielding member retracted position to the shielding position. Also, in the focused ion beam system 100, when the nozzle 42 is moved from the nozzle retracted position to the film formation position, the shielding member 60 automatically moves from the shielding position to the shielding member retracted position. The operation of the focused ion beam system 100 will be described in detail below.

[0034] 1.3.2. Deposition of deposition film 4, when a deposition film is formed using a gas injection device 40, a nozzle 42 is placed at a film formation position where gas 2 can be sprayed onto a sample S from an outlet 41. By placing the nozzle 42 at the film formation position, the outlet 41 is placed near the sample S. For example, when the nozzle 42 is placed at the film formation position, the distance between the outlet 41 and the surface of the sample S is approximately several tens of μm to several hundreds of μm.

[0035] When the nozzle 42 is placed in the film formation position, the shielding member 60 is placed in the shielding member retracted position. The shielding member retracted position is a position that is not between the outlet 41 and the sample S. When the shielding member 60 is placed in the shielding member retracted position, the shielding member 60 does not intersect with the line segment L that connects the center of the outlet 41 and the intersection point P0. Therefore, by placing the shielding member 60 in the shielding member retracted position, the shielding member 60 does not obstruct the flow of the gas 2 blown out from the outlet 41.

[0036] 2, when the nozzle 42 is positioned at the film formation position, the valve 46 is opened, causing the gas 2 to be blown out from the outlet 41. This allows the gas 2 to be blown onto the surface of the sample S, and a deposition film to be formed on the surface of the sample S. As shown in FIG. 3, when the valve 46 is closed, the supply of the gas 2 from the reservoir tank 44 to the nozzle 42 is stopped.

[0037] 1.3.3. Nozzle retraction When retracting the nozzle 42 after forming the deposition film, the user instructs the control unit 80 to retract the nozzle 42. Upon receiving the instruction to retract the nozzle 42, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position shown in Fig. 4 to the nozzle retraction position shown in Fig. 5. The nozzle support mechanism 50 moves the nozzle 42 linearly from the film formation position to the nozzle retraction position.

[0038] The nozzle retracted position is a position where the nozzle 42 is sufficiently separated from the sample S. The distance between the blow-out port 41 and the sample S at the nozzle retracted position is greater than the distance between the blow-out port 41 and the sample S at the film-forming position. By disposing the nozzle 42 at the nozzle retracted position, The surrounding space can be used effectively.

[0039] The control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, and then causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position shown in FIG. 4 to the shielding position shown in FIG. 5.

[0040] The shielding position is a position between the air outlet 41 and the sample S supported by the sample stage 30. When the shielding member 60 is placed at the shielding position, the shielding member 60 intersects with the line segment L that connects the center of the air outlet 41 and the intersection point P0.

[0041] FIG. 6 is a cross-sectional view that schematically shows the gas injection device 40 when the valve 46 is closed after the gas 2 is sprayed onto the sample S.

[0042] As shown in FIG. 6, because the nozzle 42 is thin and long, gas 2 remains in the nozzle 42 even when the valve 46 is closed. If this remaining gas 2 leaks from the nozzle 42 and reaches the surface of the sample S, a deposition film is unintentionally formed on the surface of the sample S. In particular, in cryo-FIB, a deposition film is formed without irradiating an electron beam or ion beam, so that gas 2 leaking from the nozzle 42 may form a deposition film on the surface of the sample S that is thick enough to affect observation and analysis by an electron microscope. Furthermore, even if the sample S is at room temperature, depending on the type of gas 2, a deposition film may be formed thick on the surface of the sample S.

[0043] In the focused ion beam device 100, as described above, when the nozzle 42 is moved to the nozzle retracted position, the shielding member 60 is moved to the shielding position. Therefore, the shielding member 60 can block the flow of the gas 2 leaking from the nozzle 42 toward the sample S.

[0044] Here, the degree of vacuum in the sample chamber 102 is 10 -5 Pa~10 -6 This is a molecular flow region of about 100 Pa. In the molecular flow region, gas molecules fly in a substantially straight line. Therefore, gas molecules that fly out of the outlet 41 and collide with the shielding member 60 are scattered into the sample chamber 102 without going around the shielding member 60. Therefore, by disposing the shielding member 60 between the outlet 41 and the sample S, almost no gas molecules travel from the outlet 41 toward the sample S. Although there are gas molecules that collide with the shielding member 60 and then collide with the wall of the sample chamber 102 to reach the sample S, their number is extremely small. Therefore, in the focused ion beam device 100, the amount of gas leaking from the nozzle 42 and reaching the sample S can be reduced. This makes it possible to prevent a deposition film from being formed on the surface of the sample S so thick that it would affect observation and analysis using an electron microscope.

[0045] 1.3.4. Inserting the nozzle When inserting the nozzle 42 to form a deposition film on the sample S, the user instructs the control unit 80 to insert the nozzle 42. Upon receiving the instruction to insert the nozzle 42, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position shown in FIG. 5 to the shielding member retracted position shown in FIG. 4. After causing the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retracted position, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position shown in FIG. 5 to the film forming position shown in FIG. 4. This makes it possible to form a deposition film.

[0046] Effects The focused ion beam device 100 includes an FIB column 20 for irradiating an ion beam onto a sample S, a nozzle 42 for spraying a gas 2 for forming a deposition film onto the sample S from a blowout port 41, a sample stage 30 for supporting the sample S, and a shielding member for preventing the flow of the gas 2. The shielding member support mechanism includes a shielding member (60) and a shielding member support mechanism (70) that movably supports the shielding member (60) between a shielding position between the air outlet (41) and the sample S supported on the sample stage (30) and a shielding member retracted position that is not located between the air outlet (41) and the sample S supported on the sample stage (30).

[0047] Therefore, in the focused ion beam device 100, when the nozzle 42 is not used, the shielding member 60 can be disposed between the outlet 41 and the sample S. This reduces the amount of gas that leaks from the nozzle 42 and reaches the sample S. Therefore, in the focused ion beam device 100, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it affects observation and analysis by an electron microscope.

[0048] The focused ion beam device 100 includes a nozzle support mechanism 50 that movably supports the nozzle 42 between a film-forming position where the gas 2 is sprayed onto the sample S from the outlet 41 and a nozzle retracted position different from the film-forming position, and a control unit 80 that controls the nozzle support mechanism 50 and the shielding member support mechanism 70. When the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film-forming position to the nozzle retracted position, the control unit 80 also causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position to the shielding position. Therefore, in the focused ion beam device 100, when the nozzle 42 is moved from the film-forming position to the nozzle retracted position, the shielding member 60 automatically moves from the shielding member retracted position to the shielding position. Therefore, the focused ion beam device 100 can prevent a thick deposition film from being formed on the surface of the sample S without the user even realizing it.

[0049] In the focused ion beam system 100, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position to the film formation position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retracted position. Therefore, in the focused ion beam system 100, when the nozzle 42 is moved from the nozzle retracted position to the film formation position, the shielding member 60 automatically moves from the shielding position to the shielding member retracted position. Therefore, in the focused ion beam system 100, it is possible to prevent a thick deposition film from being formed on the surface of the sample S without the user being aware of it.

[0050] The focused ion beam device 100 includes a cooling mechanism 32 that cools the sample stage 30. In the focused ion beam device 100, when the nozzle 42 is not used, a shielding member 60 can be disposed between the outlet 41 and the sample S. Therefore, in the focused ion beam device 100, even in the case of cryo-FIB, which cools and processes the sample S, it is possible to prevent a thick deposition film from being unintentionally formed on the surface of the sample S.

[0051] The focused ion beam device 100 includes a reservoir tank 44 that contains a gas source 4 that generates gas 2, and a valve 46 that is provided between the nozzle 42 and the reservoir tank 44. Furthermore, by opening the valve 46, the gas 2 is supplied from the reservoir tank 44 to the nozzle 42. In the focused ion beam device 100, when the nozzle 42 is not in use, a shielding member 60 is disposed between the outlet 41 and the sample S, and therefore, when the valve 46 is closed, the amount of gas that leaks from the nozzle 42 and reaches the sample S can be reduced.

[0052] 1.5. Variations 1.5.1. First variant In the first embodiment described above, the control unit 80 controls the shielding member support mechanism 70 to change the position of the shielding member 60 in accordance with the position of the nozzle 42, but the processing of the control unit 80 is not limited to this. For example, the control unit 80 may control the shielding member support mechanism 70 to change the position of the shielding member 60 in accordance with an instruction from a user. That is, when the control unit 80 receives an instruction from a user to move the shielding member 60 to the shielding position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 to the shielding position. In addition, the control unit 80 may also control the shielding member 60 to move the shielding member 60 to the shielding position. When an instruction to move to the retracted position is received from the user, the shielding member support mechanism 70 is caused to move the shielding member 60 to the retracted position.

[0053] 1.5.2. Second Variant In the first embodiment described above, the control unit 80 controls the shielding member support mechanism 70 to change the position of the shielding member 60, but the user may manually operate the shielding member support mechanism 70 to change the position of the shielding member 60. In this case, the shielding member support mechanism 70 may not have a drive device, for example, and the user may manually move the shielding member 60 via a mechanical element such as a shaft connected to the shielding member 60.

[0054] Similarly, in the first embodiment described above, the control unit 80 controls the nozzle support mechanism 50 to change the position of the nozzle 42, but the user may manually operate the nozzle support mechanism 50 to change the position of the nozzle 42. In this case, the nozzle support mechanism 50 may not have a drive device, for example, and the user may manually move the nozzle 42 via a mechanical element such as a shaft connected to the nozzle 42.

[0055] 1.5.3. Third Variant Fig. 7 is a diagram showing a modified example of the focused ion beam device 100. As shown in Fig. 7, the focused ion beam device 100 includes a detector 90 that detects electrons emitted from the sample S by irradiating the sample S with an electron beam. In the focused ion beam device 100 according to the third modified example, the shielding member 60 is connected to the detector 90.

[0056] The detector 90 is, for example, a backscattered electron detector that detects backscattered electrons emitted from the sample S. In the focused ion beam device 100, the sample S is scanned with an electron probe by the SEM column 10, and the backscattered electrons emitted from the sample S are detected by the detector 90, thereby obtaining a backscattered electron image.

[0057] The shielding member support mechanism 70 movably supports the shielding member 60 and the detector 90. That is, the shielding member support mechanism 70 also functions as a detector support mechanism that movably supports the detector 90. In this way, the shielding member support mechanism 70 also functions as a detector support mechanism, which allows the number of parts to be reduced. When the detector 90 detects backscattered electrons, the shielding member support mechanism 70 moves the detector 90 to directly below the SEM lens barrel 10 where backscattered electrons can be detected. When the detector 90 does not detect backscattered electrons, the shielding member support mechanism 70 moves the detector 90 to the detector retract position shown in FIG. 7. The detector retract position is set at a position away from the sample S.

[0058] The detector 90 to which the shielding member 60 is connected is not limited to a backscattered electron detector, but may be any detector that detects a signal emitted from the sample S. For example, the detector 90 may be an X-ray detector that detects characteristic X-rays emitted from the sample S, or an EBSD detector for acquiring EBSD (Electron Backscatter Diffraction).

[0059] Furthermore, the member to which the shielding member 60 is connected is not limited to a detector, and may be any other member disposed in the sample chamber 102. The shielding member 60 may be connected, for example, to a manipulator for picking up a sample piece cut out from the sample S. The shielding member support mechanism 70 may movably support the shielding member 60 and the manipulator.

[0060] 1.5.4. Fourth Variant In the first embodiment described above, the control unit 80 operates the shielding member support mechanism 70 in accordance with the operation of the nozzle support mechanism 50, but the shielding member support mechanism 70 may be configured so that the operation of the shielding member support mechanism 70 is mechanically linked to the operation of the nozzle support mechanism 50. That is, When the nozzle support mechanism 50 moves the nozzle 42 from the film formation position to the nozzle retracted position, the shielding member support mechanism 70 may move the shielding member 60 from the shielding member retracted position to the shielding position in mechanical interlocking with the operation of the nozzle support mechanism 50. Similarly, when the nozzle support mechanism 50 moves the nozzle 42 from the nozzle retracted position to the film formation position, the shielding member support mechanism 70 may move the shielding member 60 from the shielding position to the shielding member retracted position in mechanical interlocking with the operation of the nozzle support mechanism 50.

[0061] In this way, the shielding member support mechanism 70 mechanically moves the shielding member 60 between the shielding position and the shielding member retracted position in conjunction with the movement of the nozzle 42, thereby preventing a thick deposition film from being formed on the surface of the sample S without the user being aware of it.

[0062] 2. Second embodiment 2.1. Focused ion beam equipment Next, a focused ion beam system according to a second embodiment will be described with reference to the drawings. Figures 8 and 9 are diagrams showing the configuration of a focused ion beam system 200 according to the second embodiment. Figures 8 and 9 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam system 200 according to the second embodiment, components having the same functions as those of the focused ion beam system 100 according to the first embodiment will be given the same reference numerals, and detailed description thereof will be omitted.

[0063] In the focused ion beam device 200, as shown in FIGS. 8 and 9, the shielding member 60 is a plate-shaped lid that closes the outlet 41 of the nozzle .

[0064] The shielding member support mechanism 70 includes a support member 72 that supports the shielding member 60, a shaft member 73 that rotatably connects the shielding member 60 to the support member 72, and a drive device 74 that rotates the shielding member 60 around the shaft member 73. In the shielding member support mechanism 70, by rotating the shielding member 60 around the shaft member 73 with the drive device 74, the shielding member 60 can be moved between the shielding position shown in Fig. 9 and the shielding member retracted position shown in Fig. 8.

[0065] As shown in Fig. 8, by placing the shielding member 60 in the shielding member retracted position, it is possible to open the lid made of the shielding member 60 that covers the air outlet 41. Also, as shown in Fig. 9, by placing the shielding member 60 in the shielding position, it is possible to cover the air outlet 41.

[0066] Here, the nozzle 42 is supported by a nozzle support mechanism 50, and the shielding member 60 is supported by a shielding member support mechanism 70. In this way, since the nozzle 42 and the shielding member 60 are supported by separate members, even if the nozzle 42 is moved to the film formation position, the shielding member 60 can be placed at a shielding member retracted position away from the sample S. Therefore, in the focused ion beam device 200, the space near the sample S can be used effectively.

[0067] 2.2. Operation 2.2.1. Nozzle and Shielding Member Operation In the following, the operation of the focused ion beam device 200 will be described, focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0068] 2.2.2. Deposition of deposition film As shown in Fig. 8, when a deposition film is formed using the gas injection device 40, the nozzle 42 is placed at a film formation position where the gas 2 is sprayed onto the sample S from the blow-out port 41. With the nozzle 42 at the film formation position, a deposition film can be formed on the surface of the sample S by opening the valve 46 as shown in Fig. 2. At this time, the shielding member 60 is placed at the shielding member retracted position, so the shielding member 60 that blocks the blow-out port 41 is in an open state, The shielding member 60 does not obstruct the flow of the gas 2 blown out from the blowout port 41.

[0069] 2.2.3. Nozzle retraction 9, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position. After causing the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position to the shielding position. This allows the shielding member 60 to cover the blow-out port 41. Therefore, the flow of gas 2 leaking from the nozzle 42 and heading toward the sample S can be prevented.

[0070] Effects In the focused ion beam device 200, similarly to the focused ion beam device 100 described above, when the nozzle 42 is not used, the shielding member 60 can be disposed between the outlet 41 and the sample S. Therefore, in the focused ion beam device 200, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it would affect observation or analysis by an electron microscope.

[0071] 2.4. Variations In the second embodiment described above, the control unit 80 operated the shielding member support mechanism 70 in accordance with the operation of the nozzle support mechanism 50. However, as in the fourth modified example of the first embodiment described above, the shielding member support mechanism 70 may be configured so that the operation of the shielding member support mechanism 70 is mechanically linked to the operation of the nozzle support mechanism 50.

[0072] For example, the shielding member support mechanism 70 may include a biasing member such as a spring that biases the shielding member 60 to maintain the shielding position. When moving the nozzle 42 from the nozzle retracted position to the film formation position, the tip of the nozzle 42 presses the shielding member 60 to move the shielding member 60 from the shielding position to the shielding member retracted position, thereby opening the cover that protects the air outlet 41. When moving the nozzle 42 from the film formation position to the nozzle retracted position, the shielding member 60 is biased by the biasing member to return from the shielding member retracted position to the shielding position, thereby covering the air outlet 41.

[0073] The first and second modifications of the first embodiment described above are also applicable to the focused ion beam device 200 according to the second embodiment described above.

[0074] 3. Third embodiment 3.1. Focused ion beam equipment Next, a focused ion beam system according to a third embodiment will be described with reference to the drawings. Figures 10 and 11 are diagrams showing the configuration of a focused ion beam system 300 according to the third embodiment. Figures 10 and 11 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam system 300 according to the third embodiment, components having the same functions as those of the focused ion beam system 100 according to the first embodiment will be given the same reference numerals, and detailed description thereof will be omitted.

[0075] In the focused ion beam device 100 described above, as shown in FIG. 5, a shielding member 60 is disposed between the outlet 41 and the sample S, thereby reducing the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0076] In contrast, in the focused ion beam device 300, as shown in Figures 10 and 11, the nozzle 42 is moved so that the direction of the outlet 41 is not directed toward the sample S, thereby reducing the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0077] The nozzle support mechanism 50 moves the nozzle 42 between the film formation position and the nozzle retracted position, thereby switching between a film-formation ready state in which the air outlet 41 faces the sample S as shown in Fig. 10 and a retracted state in which the air outlet 41 does not face the sample S as shown in Fig. 11. In this way, the nozzle support mechanism 50 functions as a switching mechanism that switches between the film-formation ready state and the retracted state.

[0078] The nozzle 42 has a first portion 42a and a second portion 42b. The first portion 42a and the second portion 42b are connected. An air outlet 41 is provided at the tip of the second portion 42b. The central axis A2 of the second portion 42b is inclined with respect to the central axis A1 of the first portion 42a. In other words, the nozzle 42 is bent at the connection portion between the first portion 42a and the second portion 42b. The length of the second portion 42b is shorter than the length of the first portion 42a.

[0079] The nozzle support mechanism 50 linearly moves the nozzle 42 along the central axis A1. Because the central axis A2 of the second portion 42b is inclined with respect to the central axis A1, moving the nozzle 42 along the central axis A1 changes the direction in which the blow-out port 41 faces. Therefore, it is possible to switch between a film-forming state and a retracted state.

[0080] The film-forming state is a state in which the blow-out port 41 faces the sample S. The direction in which the blow-out port 41 faces is along the central axis A2. When the sample S and the central axis A2 intersect, the blow-out port 41 faces the sample S. In the film-forming state, the central axis A2 intersects with the surface of the sample S. In the film-forming state, the gas 2 blown out from the blow-out port 41 flows toward the sample S. Therefore, a deposition film can be formed on the surface of the sample S.

[0081] The retracted state is a state in which the outlet 41 is not facing the sample S. In the retracted state, the central axis A2 of the second portion 42b does not intersect with the surface of the sample S. In the molecular flow region, gas molecules fly in an almost straight line, so in the retracted state, the gas 2 blown out from the outlet 41 flows in a direction different from the direction toward the sample S. Therefore, in the retracted state, the amount of gas 2 leaking from the nozzle 42 and reaching the sample S can be reduced compared to the film-forming state.

[0082] 3.2. Operation 3.2.1. Nozzle and shielding element operation In the following, the operation of the focused ion beam device 300 will be described, focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0083] 3.2.2. Deposition of the deposition film When forming a deposition film using the gas injection device 40, the nozzle 42 is placed at the film formation position, as shown in Fig. 10. By placing the nozzle 42 at the film formation position, the nozzle 41 of the nozzle 42 is placed in a state where film formation is possible, with the nozzle 42 facing the sample S.

[0084] 2, when the valve 46 is opened, the gas 2 is blown out from the blowout port 41. This allows the gas 2 to be blown onto the surface of the sample S, and a deposition film can be formed on the surface of the sample S.

[0085] 3.2.3. Nozzle retraction When the control unit 80 receives an instruction to retract the nozzle 42, it causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retraction position. By moving the nozzle 42 to the nozzle retraction position, the nozzle 42 is brought into a retracted state in which the outlet 41 of the nozzle 42 does not face the sample S, as shown in Fig. 11. This reduces the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0086] 3.2.4. Inserting the nozzle When the control unit 80 receives an instruction to insert the nozzle 42, it controls the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position to the film formation position. By moving the nozzle 42 to the film formation position, the nozzle 42 enters a film formation ready state in which the outlet 41 of the nozzle 42 faces the sample S, as shown in FIG.

[0087] Effects The focused ion beam device 300 includes a nozzle support mechanism 50 that functions as a switching mechanism for switching between a film-forming state in which the outlet 41 of the nozzle 42 faces the sample S, and a retracted state in which the outlet 41 does not face the sample S. Therefore, in the focused ion beam device 300, when the nozzle 42 is not in use, the nozzle can be put into a retracted state in which the outlet 41 does not face the sample S. Therefore, in the focused ion beam device 300, similar to the focused ion beam device 100, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it would affect observation or analysis by an electron microscope.

[0088] In the focused ion beam device 300, the nozzle support mechanism 50, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the nozzle 42. Therefore, compared to the focused ion beam device 100 described above, the focused ion beam device 300 does not require the use of the shielding member 60, and therefore the number of parts can be reduced.

[0089] 3.4. Variations In the third embodiment described above, the control unit 80 controls the nozzle support mechanism 50 to change the position of the nozzle 42, but the user may also manually operate the nozzle support mechanism 50 to change the position of the nozzle 42.

[0090] 4. Fourth embodiment 4.1. Focused ion beam equipment Next, a focused ion beam device according to a fourth embodiment will be described with reference to the drawings. Figures 12 and 13 are diagrams showing the configuration of a focused ion beam device 400 according to the fourth embodiment. Note that Figures 12 and 13 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam device 400 according to the fourth embodiment, components having the same functions as the components of the focused ion beam device 100 according to the first embodiment and the focused ion beam device 300 according to the third embodiment will be given the same reference numerals, and detailed description thereof will be omitted.

[0091] 10 and 11, in the focused ion beam device 300 described above, the nozzle support mechanism 50 functioning as a switching mechanism switches between the film-deposition ready state and the retracted state by moving the nozzle 42. In contrast, in the focused ion beam device 400, the nozzle support mechanism 50 functioning as a switching mechanism switches between the film-deposition ready state shown in FIG. 12 and the retracted state shown in FIG. 13 by rotationally moving the nozzle 42.

[0092] The nozzle support mechanism 50 rotationally moves the nozzle 42. The nozzle support mechanism 50 includes, for example, a shaft member that rotatably supports the nozzle 42 and a drive device such as a motor, and rotates the nozzle 42 around the shaft member by the power of the drive device.

[0093] By rotating the nozzle 42, the nozzle 42 can be tilted to change the orientation of the air outlet 41. This makes it possible to switch between a film-forming state in which the air outlet 41 faces the sample S and a retracted state in which the air outlet 41 does not face the sample S.

[0094] In the example shown in FIGS. 12 and 13, the nozzle 42 is a straight tube, but the nozzle 42 may also be bent as shown in FIGS.

[0095] 4.2. Operation The operation of the focused ion beam device 400 is similar to that of the focused ion beam device 300 described above, except that the nozzle support mechanism 50 rotates the nozzle 42, and therefore a description thereof will be omitted.

[0096] Effects In the focused ion beam device 400, the nozzle support mechanism 50, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the nozzle 42. Therefore, in the focused ion beam device 400, similar to the focused ion beam device 100, it is possible to prevent a thick deposition film from being unintentionally formed on the surface of the sample S. Note that moving the nozzle 42 includes linearly moving the nozzle 42 as shown in FIGS. 10 and 11 and rotationally moving the nozzle 42 as shown in FIGS. 12 and 13.

[0097] 4.4. Variations 12 and 13, the nozzle support mechanism 50 rotates the nozzle 42 and the reservoir tank 44 as a unit, but although not shown, the nozzle support mechanism 50 may rotate only the nozzle 42. For example, by connecting the reservoir tank 44 and the nozzle 42 with a deformable member such as a resin tube or a metal bellows, it is possible to rotate only the nozzle 42.

[0098] Furthermore, the nozzle support mechanism 50 may move the nozzle 42 by combining the rotational movement of the nozzle 42 shown in FIGS. 12 and 13 with the linear movement of the nozzle 42 shown in FIGS.

[0099] 5. Fifth embodiment 5.1. Focused ion beam equipment Next, a focused ion beam device according to a fifth embodiment will be described with reference to the drawings. Figures 14 and 15 are diagrams showing the configuration of a focused ion beam device 500 according to the fifth embodiment. Note that Figures 14 and 15 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam device 500 according to the fifth embodiment, components having the same functions as those of the focused ion beam device 100 according to the first embodiment, the focused ion beam device 300 according to the third embodiment, and the focused ion beam device 400 according to the fourth embodiment will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0100] In the focused ion beam device 300 and the focused ion beam device 400 described above, switching between the film-forming state and the retracted state is performed by moving the nozzle 42. In contrast, in the focused ion beam device 500, switching between the film-forming state shown in FIG. 15 and the retracted state shown in FIG. 14 is performed by moving the sample S.

[0101] In the focused ion beam device 500, the nozzle 42 is fixed. The nozzle 42 is disposed at a position where the outlet 41 does not face the intersection P0. For example, the nozzle 42 is disposed so that the outlet 41 faces downward. The nozzle 42 is disposed at a position away from the intersection P0.

[0102] The sample stage 30 moves the sample S between a processing position, which is the position of the intersection P0 shown in Fig. 14, and a film-forming position, which is shown in Fig. 15, where the sample S intersects with the central axis A0 of the nozzle 42. The sample stage 30 moves the sample S in the horizontal direction. The focused ion beam device 500 has a processing position where the sample S is processed and observed, a film-forming position where a deposition film is formed on the sample S, and are different.

[0103] As shown in FIG. 14, when the sample S is placed at the processing position, the nozzle 42 is in a retracted state in which the outlet 41 does not face the sample S. This reduces the amount of gas 2 leaking from the nozzle 42 and hitting the sample S. As shown in FIG. 15, when the sample S is placed at the film formation position, the nozzle 42 is in a film formation ready state in which the outlet 41 faces the sample S. This allows a deposition film to be formed on the surface of the sample S. In this way, the sample stage 30 functions as a switching mechanism that switches between the film formation ready state and the retracted state.

[0104] 5.2. Operation 5.2.1. Nozzle and shield operation In the following, the operation of the focused ion beam device 500 will be described, focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0105] 5.2.2. Deposition of deposition film When forming a deposition film using the gas injection device 40, the sample S is placed at the film formation position, as shown in FIG. 15. By placing the sample S at the film formation position, the nozzle 42 is placed in a film formation ready state, with the outlet 41 facing the sample S. In the film formation ready state, as shown in FIG. 2, by opening the valve 46, the gas 2 is blown out from the outlet 41. This allows the gas 2 to be blown onto the surface of the sample S. Because the sample S is cooled by the sample stage 30, by blowing the gas 2 onto the surface of the sample S, a deposition film can be formed on the surface of the sample S without irradiating it with an electron beam or ion beam.

[0106] 5.2.3. Processing and observation When processing and observation are to be performed after the deposition film is formed, the user instructs the control unit 80 to move the sample S to the processing position. Upon receiving the instruction to move the sample S to the processing position, the control unit 80 causes the sample stage 30 to move the sample S from the film formation position shown in Fig. 15 to the processing position shown in Fig. 14. By placing the sample S at the processing position, the sample S is placed at the intersection P0, and therefore the sample S can be processed and observed.

[0107] Furthermore, by placing the sample S at the processing position, the nozzle 42 is in a retracted state in which the outlet 41 does not face the sample S. In the retracted state, the outlet 41 does not face the sample S, so the amount of gas 2 leaking from the nozzle 42 and reaching the sample S can be reduced. Therefore, for example, even when processing and observation are not being performed, by placing the sample S at the processing position, the amount of gas 2 leaking from the nozzle 42 and reaching the sample S can be reduced.

[0108] 5.2.4. Movement to deposition position When moving the sample S to the film formation position, the user instructs the control unit 80 to move the sample S to the film formation position. When the control unit 80 receives the instruction to move the sample S to the film formation position, it causes the sample stage 30 to move the sample S from the processing position shown in FIG. 14 to the film formation position shown in FIG. 15. By placing the sample S at the film formation position, the nozzle 42 is brought into a film formation ready state with the air outlet 41 facing the sample S. This allows a deposition film to be formed on the surface of the sample S.

[0109] Effects In the focused ion beam device 500, the sample stage 30, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the sample S. Therefore, in the focused ion beam device 500, similar to the focused ion beam device 100, it is possible to prevent a thick deposition film from being unintentionally formed on the surface of the sample S. .

[0110] In the focused ion beam device 500, the nozzle 42 is fixed, and therefore, compared to, for example, the focused ion beam device 100, a mechanism for moving the nozzle 42 is not required, and the number of parts can be reduced.

[0111] 6. Other The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention.

[0112] In the first embodiment described above, the focused ion beam device 100 includes the SEM lens barrel 10 and the FIB lens barrel 20, but the focused ion beam device 100 does not necessarily have to include the SEM lens barrel 10. The same applies to the focused ion beam devices according to the second to fifth embodiments, and they do not necessarily have to include the SEM lens barrel 10.

[0113] Furthermore, the above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0114] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the present invention includes configurations that are substantially identical to the configurations described in the embodiments. A substantially identical configuration means, for example, a configuration with the same function, method, and result, or a configuration with the same purpose and effect. The present invention also includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations in which publicly known technology is added to the configurations described in the embodiments. [Explanation of symbols]

[0115] 2...gas, 4...gas source, 10...SEM lens barrel, 20...FIB lens barrel, 30...sample stage, 32...cooling mechanism, 40...gas injection device, 41...outlet, 42...nozzle, 42a...first part, 42b...second part, 44...reservoir tank, 46...valve, 50...nozzle support mechanism, 60...shielding member, 70...shielding member support mechanism, 72...support member, 73...shaft member, 74...drive device, 80...control unit, 90...detector, 100...focused ion beam device, 102...sample chamber, 200...focused ion beam device, 300...focused ion beam device, 400...focused ion beam device, 500...focused ion beam device

Claims

1. 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported on the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported on the sample stage; a nozzle support mechanism that supports the nozzle movably between a film-forming position where the gas can be sprayed onto the sample from the outlet and a nozzle retracted position different from the film-forming position; a control unit that controls the nozzle support mechanism and the shielding member support mechanism; Including, The control unit causes the nozzle support mechanism to move the nozzle from the film formation position to the nozzle retracted position, and causes the shielding member support mechanism to move the shielding member from the shielding member retracted position to the shielding position.

2. In claim 1, The control unit causes the shielding member support mechanism to move the shielding member from the shielding position to the shielding member retracted position when causing the nozzle support mechanism to move the nozzle from the nozzle retracted position to the film formation position.

3. 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; The shielding member is positioned at a shielding position between the air outlet and the sample supported on the sample stage, and at a shielding position not positioned between the air outlet and the sample supported on the sample stage. a shielding member support mechanism that supports the shielding member so as to be movable between the retracted position and the shielding member support mechanism; a nozzle support mechanism that movably supports the nozzle; Including, The shielding member support mechanism mechanically links with the movement of the nozzle to move the shielding member between the shielding position and the shielding member retracted position.

4. 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowout port; a sample stage for supporting the sample; a blocking member for obstructing the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported on the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported on the sample stage; a detector for detecting a signal emitted from the sample; Including, The shielding member is connected to the detector.

5. In any one of claims 1 to 4, A focused ion beam device including a cooling mechanism for cooling the sample stage.

6. In any one of claims 1 to 4, a tank containing a gas source that generates the gas; a valve provided between the nozzle and the tank; Including, The focused ion beam device, wherein the gas is supplied from the tank to the nozzle by opening the valve.

Images