Heat treatment apparatus and heat treatment method

Abstract

To provide heat treatment equipment and a heat treatment method that enable secure prevention of flowing of atmosphere including oxygen gas into chambers having low-oxygen atmosphere.SOLUTION: A transfer chamber 170 and a film thickness measurement chamber 301 are connected together through a gate valve 302. A gate valve 302 opens and closes an opening 350 in which the transfer chamber 170 and film thickness measurement chamber 301 are communicated with each other. A gas supply port 501 is provided nearby one longitudinal end portion of the opening 350, and an exhaust port 502 is provided nearby the other end portion. When the gate valve 302 opens the opening 350, a nitrogen gas jetted from the gas supply port 501 is sucked into the exhaust port 502, and as a result, curtain of the nitrogen gas covering the opening 350 is formed. A flow of the curtain of the nitrogen gas is parallel to a semiconductor wafer W transferred at the opening 350.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a heat treatment apparatus and a heat treatment method for performing heat treatment such as flash lamp annealing on a substrate. The substrate to be treated includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a flat panel display (FPD), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a solar cell. [Background technology]

[0002] Flash lamp annealing (FLA), which heats semiconductor wafers in an extremely short time, is attracting attention in the semiconductor device manufacturing process.Flash lamp annealing is a heat treatment technology that uses a xenon flash lamp (hereinafter, simply referred to as "flash lamp" means a xenon flash lamp) to irradiate the surface of a semiconductor wafer with flash light, thereby raising the temperature of only the surface of the semiconductor wafer in an extremely short time (a few milliseconds or less).

[0003] The spectral distribution of radiation from a xenon flash lamp is in the ultraviolet to near-infrared range, with a shorter wavelength than conventional halogen lamps and a wavelength that roughly matches the fundamental absorption band of silicon semiconductor wafers. Therefore, when a semiconductor wafer is irradiated with flash light from a xenon flash lamp, little light is transmitted, making it possible to rapidly heat the semiconductor wafer. It has also been found that if the flash light is irradiated for an extremely short period of time, less than a few milliseconds, it is possible to selectively heat only the area near the surface of the semiconductor wafer.

[0004] Flash lamp annealing is used in processes that require heating for an extremely short period of time, such as activating impurities implanted in a semiconductor wafer. By irradiating the surface of a semiconductor wafer into which impurities have been implanted by ion implantation with a flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature in an extremely short period of time, allowing only the impurities to be activated without diffusing them deeply.

[0005] Generally, a low-oxygen atmosphere is required in processing chambers where heat treatments such as flash lamp annealing are performed. A low-oxygen atmosphere is also required in transfer chambers where high-temperature semiconductor wafers are handled immediately after heat treatment. For this reason, not only are the processing chamber and transfer chamber maintained at a low oxygen concentration, but adjacent chambers are also sealed and constantly supplied with nitrogen gas to create a low-oxygen atmosphere.

[0006] However, depending on the type of chamber, it is difficult to create a sealed structure, and therefore there are chambers in which it is difficult to maintain a low oxygen concentration above a certain level.As a technique for preventing oxygen gas from being drawn into a chamber with a relatively high oxygen concentration atmosphere in a low oxygen concentration atmosphere, Patent Document 1 proposes forming a curtain of inert gas in front of the opening of the chamber. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-75888 Summary of the Invention [Problem to be solved by the invention]

[0008] However, the technology disclosed in Patent Document 1 forms a curtain that faces in the vertical direction, and the curtain may be blocked by the workpiece, such as a semiconductor wafer. This causes a problem in that the curtain's effect of blocking the atmosphere is lost, and it becomes impossible to prevent oxygen gas from flowing into a chamber with a low-oxygen concentration atmosphere.

[0009] The present invention has been made in view of the above-mentioned problems, and has an object to provide a heat treatment apparatus and a heat treatment method that can reliably prevent the inflow of an atmosphere containing oxygen gas. [Means for solving the problem]

[0010] In order to solve the above problem, the invention of claim 1 provides a heat treatment apparatus for performing a heat treatment on a substrate, the heat treatment apparatus comprising: a first chamber provided with a transfer robot for transferring the substrate; a second chamber connected to the first chamber; a gate valve provided at a connecting portion between the first chamber and the second chamber and for opening and closing an opening communicating between the first chamber and the second chamber; a gas supply unit for ejecting an inert gas so as to cover the opening; and an exhaust unit for sucking and exhausting the inert gas ejected from the gas supply unit, wherein the exhaust unit sucks in the inert gas ejected from the gas supply unit to form a curtain of inert gas that covers the opening, and the flow of the curtain from the gas supply unit to the exhaust unit is parallel to the substrate transferred between the first chamber and the second chamber via the opening by the transfer robot, and the gas supply unit ejects the inert gas only when the gate valve opens the opening. The gas supply unit includes a first gas supply port provided in the first chamber and a second gas supply port provided in the second chamber, and the exhaust unit includes a first exhaust port provided in the first chamber and a second exhaust port provided in the second chamber, and the inert gas ejected from the first gas supply port is sucked by the first exhaust port to form a first curtain of inert gas on the first chamber side, and the inert gas ejected from the second gas supply port is sucked by the second exhaust port to form a second curtain of inert gas on the second chamber side. It is characterized by:

[0012] Also, claims 2 The invention is 1 In the heat treatment apparatus according to the present invention, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other.

[0013] Also, claims 3 The invention of Claim 1 or Claim 2 In the heat treatment apparatus according to the present invention, the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain.

[0014] Also, claims 4 The invention is as follows: 3 In the heat treatment apparatus according to any one of the above inventions, the second chamber is characterized by having a film thickness measurement unit that measures the film thickness of a thin film formed on a substrate, or a back surface inspection unit that inspects for scratches on the back surface of the substrate.

[0015] Also, claims5 The invention is as follows: 4 In the heat treatment apparatus according to any one of the above aspects, a treatment chamber for irradiating a substrate with light to heat the substrate is further connected to the first chamber.

[0016] Also, claims 6 The invention is as follows: 5 In the heat treatment apparatus according to any one of the above aspects, the curtain flows in a horizontal direction.

[0017] Also, claims 7 The invention is as follows: 6 In the heat treatment apparatus according to any one of the above aspects, the inert gas ejected from the gas supply unit is nitrogen gas.

[0018] Also, claims 8 The invention relates to a heat treatment method for performing a heat treatment on a substrate, the method comprising: an opening step in which a gate valve provided at a connection portion between a first chamber provided with a transfer robot for transferring a substrate and a second chamber connected to the first chamber opens an opening communicating the first chamber with the second chamber; and a curtain forming step in which a curtain of inert gas is formed to cover the opening only when the gate valve opens the opening, and the flow of the curtain formed in the curtain forming step is parallel to the substrate transferred between the first chamber and the second chamber via the opening by the transfer robot. In the curtain forming step, a first curtain of inert gas is formed on the first chamber side, and a second curtain of inert gas is formed on the second chamber side. It is characterized by:

[0020] Also, claims 9 The invention is 8 In the heat treatment method according to the present invention, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other.

[0021] Also, claims 10 The invention of Claim 8 or Claim 9In the heat treatment method according to the present invention, the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain.

[0022] Also, claims 11 The invention is 8 From claims 10 In the heat treatment method according to any one of the above aspects, the second chamber is characterized in that film thickness measurement of a thin film formed on a substrate or inspection of scratches on the back surface of the substrate is carried out.

[0023] Also, claims 12 The invention is 8 From claims 11 In the heat treatment method according to any one of the above aspects, a treatment chamber for irradiating a substrate with light to heat the substrate is further connected to the first chamber.

[0024] Also, claims 13 The invention is 8 From claims 12 In the heat treatment method according to any one of the above aspects, the curtain flows in a horizontal direction.

[0025] Also, claims 14 The invention is 8 From claims 13 In the heat treatment method according to any one of the above aspects, the inert gas forming the curtain is nitrogen gas. [Effects of the Invention]

[0026] Claims 1 to 1 7 According to the invention, a curtain of inert gas is formed to cover the opening connecting the first chamber and the second chamber, and the flow of the curtain is parallel to the substrate being transported, so the flow of the curtain is not blocked by the substrate, and the inflow of an atmosphere containing oxygen gas can be reliably prevented. Furthermore, since a first curtain of inert gas is formed on the first chamber side and a second curtain of inert gas is formed on the second chamber side, the inflow of an atmosphere containing oxygen gas can be more reliably prevented.

[0028] In particular, claims2 According to the invention, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other, so that the first curtain and the second curtain complement each other in their atmosphere blocking effects, thereby more reliably preventing the inflow of atmosphere containing oxygen gas.

[0029] Claim 8 From claims 14 According to the invention, a curtain of inert gas is formed to cover the opening connecting the first chamber and the second chamber, and the flow of the curtain is parallel to the substrate being transported, so the flow of the curtain is not blocked by the substrate, and the inflow of an atmosphere containing oxygen gas can be reliably prevented. Furthermore, since a first curtain of inert gas is formed on the first chamber side and a second curtain of inert gas is formed on the second chamber side, the inflow of an atmosphere containing oxygen gas can be more reliably prevented.

[0031] In particular, claims 9 According to the invention, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other, so that the first curtain and the second curtain complement each other in their atmosphere blocking effects, thereby more reliably preventing the inflow of atmosphere containing oxygen gas. [Brief explanation of the drawings]

[0032] [Figure 1] 1 is a plan view showing a heat treatment apparatus according to the present invention; [Figure 2] FIG. 2 is a vertical cross-sectional view showing the configuration of a heat treatment unit. [Figure 3] FIG. 2 is a perspective view showing the overall appearance of the holding portion. [Figure 4] FIG. [Figure 5] FIG. 2 is a cross-sectional view of a susceptor. [Figure 6] FIG. [Figure 7] FIG. [Figure 8] FIG. 2 is a plan view showing the arrangement of a plurality of halogen lamps. [Figure 9] FIG. 10 is a diagram showing a mechanism for supplying an inert gas to a film thickness measurement chamber and a transfer chamber. [Figure 10] FIG. 10 is a view of the opening as seen from the transfer chamber side. [Figure 11] FIG. 10 is a diagram showing a curtain forming mechanism in the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0033] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Hereinafter, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only strictly represent the positional relationship but also represent a state of relative angular or distance displacement within a tolerance or a range that provides equivalent functionality, unless otherwise specified. Furthermore, expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only represent a state of strict quantitative equality but also represent a state of difference that provides a tolerance or equivalent functionality, unless otherwise specified. Furthermore, expressions indicating a shape (e.g., "circular," "square," "cylindrical," etc.) not only represent a geometrically strict shape but also represent a shape within a range that provides equivalent functionality, such as irregularities or chamfers, unless otherwise specified. Furthermore, expressions such as "comprise," "comprise," "include," "have," etc., regarding components, are not exclusive expressions that exclude the presence of other components. Furthermore, the expression "at least one of A, B, and C" includes "A only," "B only," "C only," "any two of A, B, and C," and "all of A, B, and C."

[0034] First Embodiment FIG. 1 is a plan view of a heat treatment apparatus 100 according to the present invention. The heat treatment apparatus 100 is a flash lamp annealing apparatus that irradiates a disk-shaped semiconductor wafer W as a substrate with flash light to heat the semiconductor wafer W. The size of the semiconductor wafer W to be treated is not particularly limited, but may be, for example, φ300 mm or φ450 mm. Note that in FIG. 1 and the subsequent figures, the dimensions and number of various parts are exaggerated or simplified as necessary for ease of understanding. Also, to clarify the directional relationships between the figures, FIGS. 1 and 2 include an XYZ Cartesian coordinate system in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane.

[0035] The heat treatment apparatus 100 includes an indexer unit 110 for loading unprocessed semiconductor wafers W into the apparatus from outside and unloading processed semiconductor wafers W from the apparatus, an alignment unit 230 for positioning the unprocessed semiconductor wafers W, a warpage measurement unit 290 for measuring the warpage of the semiconductor wafers W, two cooling units 130 and 140 for cooling the semiconductor wafers W after heat treatment, a film thickness measurement unit 300 for measuring the film thickness of a thin film formed on the semiconductor wafers W, an inspection unit 400 for inspecting the backside of the semiconductor wafers W, and a heat treatment unit 160 for performing flash heat treatment on the semiconductor wafers W. The heat treatment apparatus 100 also includes a transfer robot 150 for transferring the semiconductor wafers W to and from the cooling units 130 and 140, the film thickness measurement unit 300, the inspection unit 400, and the heat treatment unit 160. Furthermore, the heat treatment apparatus 100 includes a control unit 3 that controls the operation mechanisms and the transfer robot 150 provided in each of the above-mentioned treatment units to cause the flash heat treatment of the semiconductor wafer W to proceed.

[0036] The indexer unit 110 is disposed at an end of the heat treatment apparatus 100. The indexer unit 110 includes three load ports 111 and a transfer robot 120. The three load ports 111 are arranged side by side along the Y-axis direction at the end of the heat treatment apparatus 100. Each load port 111 can accommodate one carrier C. Thus, a maximum of three carriers C can be placed in the indexer unit 110. Carriers C containing unprocessed semiconductor wafers W are transported by an automated guided vehicle (AGV, OHT) or the like and placed on the load port 111. Carriers C containing processed semiconductor wafers W are also removed from the load port 111 by the automated guided vehicle. A dummy carrier containing a dummy wafer may be placed on one of the three load ports 111.

[0037] Furthermore, in the load port 111, the carriers C are configured to be movable up and down so that the transfer robot 120 can load and unload any semiconductor wafers W into and from the carriers C. Note that the form of the carriers C may be a FOUP (front opening unified pod) that stores semiconductor wafers W in an enclosed space, a SMIF (Standard Mechanical Interface) pod, or an OC (open cassette) that exposes the stored semiconductor wafers W to the outside air.

[0038] The transfer robot 120 is configured to be capable of sliding along the Y-axis direction, rotating around the Z-axis, and moving up and down along the Z-axis. The transfer robot 120 also moves the hand 121 back and forth. As a result, the transfer robot 120 loads and unloads semiconductor wafers W into and from carriers C placed on any of the load ports 111, and also transfers semiconductor wafers W to and from the alignment unit 230 and the warpage measurement unit 290. The transfer robot 120 loads and unloads semiconductor wafers W into and from carriers C by sliding the hand 121 and moving the carrier C up and down. The transfer of semiconductor wafers W between the transfer robot 120 and the alignment unit 230 or the warpage measurement unit 290 is performed by sliding the hand 121 and moving the transfer robot 120 up and down.

[0039] The alignment unit 230 and the warpage measurement unit 290 are sandwiched between the indexer unit 110 and the transfer chamber 170 and are installed so as to connect the two. The alignment unit 230 is a processing unit that rotates the semiconductor wafer W in a horizontal plane to orient it in an appropriate direction for flash heating. The alignment unit 230 is configured by providing, inside an alignment chamber 231, which is an aluminum alloy housing, a mechanism for supporting and rotating the semiconductor wafer W in a horizontal position, and a mechanism for optically detecting notches, orientation flats, and the like formed on the peripheral edge of the semiconductor wafer W.

[0040] A gate valve 232 is provided at the connection between the alignment chamber 231 and the indexer unit 110. An opening connecting the alignment chamber 231 and the indexer unit 110 can be opened and closed by the gate valve 232. Meanwhile, a gate valve 233 is provided at the connection between the alignment chamber 231 and the transfer chamber 170. An opening connecting the alignment chamber 231 and the transfer chamber 170 can be opened and closed by the gate valve 233. That is, the alignment chamber 231 and the indexer unit 110 are connected via the gate valve 232, and the alignment chamber 231 and the transfer chamber 170 are connected via the gate valve 233.

[0041] The gate valve 232 is opened when the semiconductor wafer W is transferred between the indexer unit 110 and the alignment chamber 231. The gate valve 233 is opened when the semiconductor wafer W is transferred between the alignment chamber 231 and the transfer chamber 170. When the gate valves 232 and 233 are closed, the interior of the alignment chamber 231 becomes an airtight space.

[0042] In the alignment unit 230, the semiconductor wafer W received from the delivery robot 120 of the indexer unit 110 is rotated around a vertical axis with the center of the semiconductor wafer W as the center of rotation, and the orientation of the semiconductor wafer W is adjusted by optically detecting a notch or the like. After the orientation adjustment is completed, the semiconductor wafer W is removed from the alignment unit 230 by the transfer robot 150.

[0043] The warpage measurement unit 290 is a processing unit that measures the warpage of the semiconductor wafer W after the heat treatment. The warpage measurement unit 290 is configured by providing a mechanism for holding the semiconductor wafer W, a mechanism for optically detecting the warpage of the semiconductor wafer W, and the like inside a warpage measurement chamber 291, which is a housing made of an aluminum alloy.

[0044] A gate valve 292 is provided at the connecting portion between the warpage measurement chamber 291 and the indexer unit 110. An opening connecting the warpage measurement chamber 291 and the indexer unit 110 can be opened and closed by the gate valve 292. On the other hand, a gate valve 293 is provided at the connecting portion between the warpage measurement chamber 291 and the transfer chamber 170. An opening connecting the warpage measurement chamber 291 and the transfer chamber 170 can be opened and closed by the gate valve 293. In other words, the warpage measurement chamber 291 and the indexer unit 110 are connected via the gate valve 292, and the warpage measurement chamber 291 and the transfer chamber 170 are connected via the gate valve 293.

[0045] The gate valve 292 is opened when the semiconductor wafer W is transferred between the indexer part 110 and the warpage measurement chamber 291. The gate valve 293 is opened when the semiconductor wafer W is transferred between the warpage measurement chamber 291 and the transfer chamber 170. When the gate valves 292 and 293 are closed, the inside of the warpage measurement chamber 291 becomes an airtight space.

[0046] The warpage measurement unit 290 optically measures the wafer warpage occurring in the heat-treated semiconductor wafer W received from the transfer robot 150. After the warpage measurement is completed, the semiconductor wafer W is taken out of the warpage measurement unit 290 by the delivery robot 120 of the indexer unit 110.

[0047] The transfer robot 150 is housed in a transfer chamber 170. Around the transfer chamber 170, an alignment chamber 231, a warpage measurement chamber 291, a cool chamber 131 of the cooling unit 130, a cool chamber 141 of the cooling unit 140, a film thickness measurement chamber 301 of the film thickness measurement unit 300, an inspection chamber 401 of the inspection unit 400, and a processing chamber 6 of the heat treatment unit 160 are connected.

[0048] The transfer robot 150 installed in the transfer chamber 170 is capable of rotating around a vertical axis (Z-axis) as indicated by arrow 150R. The transfer robot 150 has two link mechanisms consisting of multiple arm segments, and transfer hands 151a and 151b that hold semiconductor wafers W are attached to the tips of the two link mechanisms. These transfer hands 151a and 151b are arranged vertically at a predetermined pitch apart, and are each capable of sliding linearly and independently in the same horizontal direction via the link mechanisms. The transfer robot 150 also moves the two transfer hands 151a and 151b up and down while maintaining the predetermined pitch apart by raising and lowering a base on which the two link mechanisms are attached.

[0049] When the transfer robot 150 transfers (takes in or out) a semiconductor wafer W to or from the alignment chamber 231, the warpage measurement chamber 291, the cool chambers 131, 141, the film thickness measurement chamber 301, the inspection chamber 401, or the processing chamber 6 of the heat treatment unit 160, first, both transfer hands 151a, 151b rotate so as to face the transfer target. After that (or while rotating), the transfer robot 150 raises and lowers the transfer hands 151a, 151b to position one of the transfer hands at the same height as the opening of the transfer target. Then, the transfer robot 150 slides the transfer hand 151a (151b) linearly in the horizontal direction to transfer the semiconductor wafer W to or from the transfer target.

[0050] The heat treatment section 160, which is the main part of the heat treatment apparatus 100, is a substrate treatment section that performs flash heating by irradiating a preheated semiconductor wafer W with a flash of light (flash light) from xenon flash lamps FL. A gate valve 185 is provided between the transfer chamber 170 and the treatment chamber 6 of the heat treatment section 160. The gate valve 185 is opened when the semiconductor wafer W is transferred between the treatment chamber 6 of the heat treatment section 160 and the transfer chamber 170. The detailed configuration of the heat treatment section 160 will be described later.

[0051] The two cooling units 130, 140 have roughly the same configuration. The cooling units 130, 140 each include a metal cooling plate and a quartz plate placed on the top surface of the metal cooling plate inside cool chambers 131, 141, which are aluminum alloy housings (both not shown). The temperature of the cooling plate is regulated to room temperature (approximately 23°C) by a Peltier element or constant temperature water circulation. The semiconductor wafer W that has been subjected to flash heating in the heat treatment unit 160 is carried into the cool chamber 131 or 141, placed on the quartz plate, and cooled.

[0052] Gate valves 132 and 142 are provided at the connection portions between the cool chamber 131 and the transfer chamber 170 and between the cool chamber 141 and the transfer chamber 170, respectively. The opening connecting the cool chamber 131 and the transfer chamber 170 can be opened and closed by the gate valve 132. On the other hand, the opening connecting the cool chamber 141 and the transfer chamber 170 can be opened and closed by the gate valve 142. In other words, the cool chamber 131 and the transfer chamber 170 are connected via the gate valve 132, and the cool chamber 141 and the transfer chamber 170 are connected via the gate valve 142.

[0053] When a semiconductor wafer W is transferred between the cool chamber 131 of the cooling unit 130 and the transfer chamber 170, the gate valve 132 is opened. When a semiconductor wafer W is transferred between the cool chamber 141 of the cooling unit 140 and the transfer chamber 170, the gate valve 142 is opened. When the gate valves 132 and 142 are closed, the insides of the cool chambers 131 and 141 become sealed spaces.

[0054] The film thickness measurement unit 300 measures the film thickness of a thin film formed on a semiconductor wafer W using, for example, a spectroscopic ellipsometry analysis technique. The film thickness measurement unit 300 is configured with a mounting stage for supporting the semiconductor wafer W, an optical unit, and other components housed within a film thickness measurement chamber 301, which is an aluminum alloy housing. The optical unit of the spectroscopic ellipsometer directs light onto the surface of the semiconductor wafer W supported on the mounting stage and receives the light reflected from the surface. The optical unit measures the amount of change in polarization of the reflected light for each wavelength and determines the film thickness of the thin film formed on the surface of the semiconductor wafer W based on the obtained measurement data. Note that the film thickness measurement unit 300 is not limited to the spectroscopic ellipsometer described above and may be an optical interference type film thickness measurement device.

[0055] A gate valve 302 is provided at the connection between the film thickness measurement chamber 301 and the transfer chamber 170. An opening (opening 350 in FIG. 9 ) that connects the film thickness measurement chamber 301 and the transfer chamber 170 can be opened and closed by the gate valve 302. In other words, the film thickness measurement chamber 301 and the transfer chamber 170 are connected via the gate valve 302. When a semiconductor wafer W is transferred between the film thickness measurement chamber 301 of the film thickness measurement unit 300 and the transfer chamber 170, the gate valve 302 is opened.

[0056] The inspection section 400 inspects the backside of the semiconductor wafer W for scratches. The inspection section 400 includes a predetermined inspection unit inside an inspection chamber 401, which is a housing made of aluminum alloy. The inspection unit includes, for example, an imaging camera, and inspects the backside of the semiconductor wafer W for scratches by performing predetermined image analysis processing on image data obtained by imaging the backside of the semiconductor wafer W with the imaging camera.

[0057] A gate valve 402 is provided at the connecting portion between the inspection chamber 401 of the inspection unit 400 and the transfer chamber 170. The opening that connects the inspection chamber 401 and the transfer chamber 170 can be opened and closed by the gate valve 402. In other words, the inspection chamber 401 and the transfer chamber 170 are connected via the gate valve 402. When a semiconductor wafer W is transferred between the inspection chamber 401 of the inspection unit 400 and the transfer chamber 170, the gate valve 402 is opened.

[0058] The heat treatment apparatus 100 has a so-called cluster tool structure in which multiple chambers are arranged around a transfer chamber 170. A transfer mechanism is configured by the transfer robot 150 and the delivery robot 120 to transport the semiconductor wafer W from the carrier C to each processing section, such as the heat treatment section 160. The transfer robot 150 is also a center robot located at the center of the cooling sections 130 and 140, the film thickness measurement section 300, the inspection section 400, and the heat treatment section 160, and transports the semiconductor wafer W to each of these processing sections. The transfer of the semiconductor wafer W between the transfer robot 150 and the delivery robot 120 is performed via the alignment section 230 and the warpage measurement section 290. Specifically, the transfer robot 150 receives the unprocessed semiconductor wafer W that the delivery robot 120 has delivered to the alignment chamber 231, and the delivery robot 120 receives the processed semiconductor wafer W that the transfer robot 150 has delivered to the warpage measurement chamber 291. That is, the alignment chamber 231 functions as a path for the semiconductor wafer W on its way out, and the warpage measurement chamber 291 functions as a path for the semiconductor wafer W on its way back.

[0059] Next, the configuration of the heat treatment section 160 will be described. Fig. 2 is a longitudinal cross-sectional view showing the configuration of the heat treatment section 160. The heat treatment section 160 includes a processing chamber 6 that accommodates a semiconductor wafer W and performs a heat treatment thereon, a flash lamp house 5 that houses multiple flash lamps FL, and a halogen lamp house 4 that houses multiple halogen lamps HL. The flash lamp house 5 is provided above the processing chamber 6, and the halogen lamp house 4 is provided below it. The heat treatment section 160 also includes, inside the processing chamber 6, a holder 7 that holds the semiconductor wafer W in a horizontal position, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holder 7 and the transfer robot 150.

[0060] The processing chamber 6 is constructed by attaching quartz chamber windows to the top and bottom of a cylindrical chamber side portion 61. The chamber side portion 61 has a roughly cylindrical shape with openings at the top and bottom, with the upper opening attached and closed by an upper chamber window 63, and the lower opening attached and closed by a lower chamber window 64. The upper chamber window 63, which forms the ceiling of the processing chamber 6, is a disc-shaped member made of quartz and functions as a quartz window that transmits flash light emitted from the flash lamp FL into the processing chamber 6. The lower chamber window 64, which forms the floor of the processing chamber 6, is also a disc-shaped member made of quartz and functions as a quartz window that transmits light from the halogen lamp HL into the processing chamber 6.

[0061] Furthermore, a reflective ring 68 is attached to the upper part of the inner wall surface of the chamber side 61, and a reflective ring 69 is attached to the lower part. Both reflective rings 68, 69 are formed in an annular shape. The upper reflective ring 68 is attached by fitting it from the upper side of the chamber side 61. On the other hand, the lower reflective ring 69 is attached by fitting it from the lower side of the chamber side 61 and fastening it with screws (not shown). In other words, both reflective rings 68, 69 are detachably attached to the chamber side 61. The internal space of the processing chamber 6, i.e., the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61, and the reflective rings 68, 69, is defined as a heat treatment space 65.

[0062] By attaching the reflecting rings 68, 69 to the chamber side portion 61, a recess 62 is formed on the inner wall surface of the processing chamber 6. That is, the recess 62 is formed by a central portion of the inner wall surface of the chamber side portion 61 where the reflecting rings 68, 69 are not attached, the lower end surface of the reflecting ring 68, and the upper end surface of the reflecting ring 69. The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the processing chamber 6, and surrounds the holder 7 that holds the semiconductor wafer W. The chamber side portion 61 and the reflecting rings 68, 69 are made of a metal material (e.g., stainless steel) that has excellent strength and heat resistance.

[0063] Furthermore, a transfer opening (furnace port) 66 is formed in the chamber side portion 61, through which a semiconductor wafer W is loaded into and unloaded from the processing chamber 6. The transfer opening 66 can be opened and closed by a gate valve 185. The transfer opening 66 is connected to the outer peripheral surface of the recessed portion 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W can be loaded into and unloaded from the heat treatment space 65 through the transfer opening 66 and the recessed portion 62. Furthermore, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 within the processing chamber 6 becomes an airtight space.

[0064] Furthermore, through holes 61a and 61b are formed in the chamber side portion 61. The through hole 61a is a cylindrical hole for guiding infrared light radiated from the upper surface of a semiconductor wafer W held on a susceptor 74 (described later) to the infrared sensor 29 of the upper radiation thermometer 25. On the other hand, the through hole 61b is a cylindrical hole for guiding infrared light radiated from the lower surface of the semiconductor wafer W to the infrared sensor 24 of the lower radiation thermometer 20. The through holes 61a and 61b are provided at an angle with respect to the horizontal direction so that their axes of penetration intersect with the main surface of the semiconductor wafer W held on the susceptor 74. A transparent window 26 made of calcium fluoride material that transmits infrared light in a wavelength range measurable by the upper radiation thermometer 25 is attached to the end of the through hole 61a facing the heat treatment space 65. Furthermore, a transparent window 21 made of barium fluoride material that transmits infrared light in the wavelength range that can be measured by the lower radiation thermometer 20 is attached to the end of the through hole 61b facing the heat treatment space 65.

[0065] Furthermore, gas supply holes 81 are formed in the upper part of the inner wall of the processing chamber 6 to supply processing gas to the heat treatment space 65. The gas supply holes 81 are formed at a position above the recessed portion 62 and may be provided in the reflecting ring 68. The gas supply holes 81 are connected to a gas supply pipe 83 via a buffer space 82 formed in an annular shape inside the side wall of the processing chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the gas supply pipe 83. When the valve 84 is opened, processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas that has flowed into the buffer space 82 spreads within the buffer space 82, which has lower fluid resistance than the gas supply holes 81, and is supplied from the gas supply holes 81 into the heat treatment space 65. The processing gas may be an inert gas such as nitrogen (N2), argon (Ar), or helium (He), or a reactive gas such as hydrogen (H2), ammonia (NH3), oxygen (O2), ozone (O3), nitric oxide (NO), nitrous oxide (NO2), or nitrogen dioxide (NO2) (nitrogen in this embodiment).

[0066] Meanwhile, a gas exhaust hole 86 is formed in the lower part of the inner wall of the processing chamber 6 to exhaust gas from the heat treatment space 65. The gas exhaust hole 86 is formed below the recess 62 and may be provided in the reflecting ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 via a buffer space 87 formed in an annular shape inside the side wall of the processing chamber 6. The gas exhaust pipe 88 is connected to an exhaust mechanism 190. A valve 89 is inserted in the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 through the buffer space 87 to the gas exhaust pipe 88. The gas supply hole 81 and the gas exhaust hole 86 may be provided in multiple numbers along the circumferential direction of the processing chamber 6, or may be slit-shaped. The processing gas supply source 85 and the exhaust mechanism 190 may be mechanisms provided in the heat treatment apparatus 100 or may be utilities of a factory where the heat treatment apparatus 100 is installed.

[0067] A gas exhaust pipe 191 for discharging gas from the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 191 is connected to an exhaust mechanism 190 via a valve 192. By opening the valve 192, the gas from the processing chamber 6 is exhausted through the transfer opening 66.

[0068] 3 is a perspective view showing the overall appearance of the holder 7. The holder 7 is configured to include a base ring 71, a connecting portion 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. In other words, the entire holder 7 is made of quartz.

[0069] The base ring 71 is an arc-shaped quartz member with a portion missing from the annular shape. This missing portion is provided to prevent interference between the base ring 71 and a transfer arm 11 of the transfer mechanism 10, which will be described later. The base ring 71 is placed on the bottom surface of the recess 62, and is supported by the wall surface of the processing chamber 6 (see FIG. 2). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the annular shape. The connecting portions 72 are also quartz members, and are fixed to the base ring 71 by welding.

[0070] The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. FIG. 4 is a plan view of the susceptor 74. FIG. 5 is a cross-sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular, flat member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a planar size larger than that of the semiconductor wafer W.

[0071] A guide ring 76 is installed on the periphery of the upper surface of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, if the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner periphery of the guide ring 76 has a tapered surface that widens upward from the holding plate 75. The guide ring 76 is made of quartz, the same as the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integrated member.

[0072] The area of ​​the upper surface of the holding plate 75 that is inside the guide ring 76 is a flat holding surface 75a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are provided on the holding surface 75a of the holding plate 75. In this embodiment, a total of 12 substrate support pins 77 are provided at 30° intervals along a circumference concentric with the outer circumferential circle of the holding surface 75a (the inner circumferential circle of the guide ring 76). The diameter of the circle on which the 12 substrate support pins 77 are arranged (the distance between opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is 300 mm, the diameter is 270 mm to 280 mm (270 mm in this embodiment). Each substrate support pin 77 is made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be machined integrally with the holding plate 75.

[0073] Returning to FIG. 3 , four connecting portions 72 erected on the base ring 71 are fixed to the peripheral portion of the holding plate 75 of the susceptor 74 by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portions 72. The base ring 71 of the holding portion 7 is supported on the wall surface of the processing chamber 6, and the holding portion 7 is thereby attached to the processing chamber 6. When the holding portion 7 is attached to the processing chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal position (a position in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is in a horizontal plane.

[0074] The semiconductor wafer W loaded into the processing chamber 6 is placed and held in a horizontal position on the susceptor 74 of the holder 7 attached to the processing chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 standing on a holding plate 75 and held on the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the underside of the semiconductor wafer W to support the semiconductor wafer W. The heights of the twelve substrate support pins 77 (the distance from the upper ends of the substrate support pins 77 to the holding surface 75a of the holding plate 75) are uniform, so the twelve substrate support pins 77 can support the semiconductor wafer W in a horizontal position.

[0075] Furthermore, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. The thickness of the guide ring 76 is greater than the height of the substrate support pins 77. Therefore, the guide ring 76 prevents the semiconductor wafer W supported by the plurality of substrate support pins 77 from shifting in the horizontal direction.

[0076] 3 and 4, an opening 78 is formed in the holding plate 75 of the susceptor 74, penetrating vertically. The opening 78 is provided so that the lower radiation thermometer 20 can receive radiation (infrared light) emitted from the underside of the semiconductor wafer W. That is, the lower radiation thermometer 20 receives the light emitted from the underside of the semiconductor wafer W through the opening 78 and a transparent window 21 attached to the through-hole 61b of the chamber side 61, thereby measuring the temperature of the semiconductor wafer W. Furthermore, the holding plate 75 of the susceptor 74 is formed with four through-holes 79 through which lift pins 12 of the transfer mechanism 10, which will be described later, pass to transfer the semiconductor wafer W.

[0077] FIG. 6 is a plan view of the transfer mechanism 10. FIG. 7 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arms 11 are arc-shaped so as to fit roughly along the annular recess 62. Two lift pins 12 are provided upright on each of the transfer arms 11. Each transfer arm 11 is rotatable by a horizontal movement mechanism 13. The horizontal movement mechanism 13 horizontally moves the pair of transfer arms 11 between a transfer operation position (position indicated by a solid line in FIG. 6) where the pair of transfer arms 11 transfer a semiconductor wafer W to the holder 7 and a retracted position (position indicated by a two-dot chain line in FIG. 6) where the pair of transfer arms 11 do not overlap the semiconductor wafer W held by the holder 7 in a plan view. The transfer operation position is below the susceptor 74, and the retracted position is outward of the susceptor 74. The horizontal movement mechanism 13 may be one that rotates each transfer arm 11 using an individual motor, or one that uses a link mechanism to rotate a pair of transfer arms 11 in conjunction with one another using a single motor.

[0078] Furthermore, the pair of transfer arms 11 are raised and lowered together with the horizontal movement mechanism 13 by the lifting mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 to the transfer operation position, a total of four lift pins 12 pass through through holes 79 (see FIGS. 3 and 4 ) formed in the susceptor 74, and the upper ends of the lift pins 12 protrude from the upper surface of the susceptor 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 to the transfer operation position to remove the lift pins 12 from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open, each transfer arm 11 moves to a retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holder 7. Because the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arms 11 is inside the recess 62. In addition, an exhaust mechanism (not shown) is also provided near the location where the drive part of the transfer mechanism 10 (horizontal movement mechanism 13 and lifting mechanism 14) is located, and is configured to exhaust the atmosphere around the drive part of the transfer mechanism 10 to the outside of the processing chamber 6.

[0079] As shown in FIG. 2, the processing chamber 6 is provided with two radiation thermometers (pyrometers in this embodiment): an upper radiation thermometer 25 and a lower radiation thermometer 20. The upper radiation thermometer 25 is installed diagonally above the semiconductor wafer W held on the susceptor 74 and receives infrared light radiated from the top surface of the semiconductor wafer W to measure the temperature of the top surface. The infrared sensor 29 of the upper radiation thermometer 25 is equipped with an InSb (indium antimonide) optical element so as to be able to respond to a sudden temperature change on the top surface of the semiconductor wafer W at the moment when the flash light is irradiated. On the other hand, the lower radiation thermometer 20 is installed diagonally below the semiconductor wafer W held on the susceptor 74 and receives infrared light radiated from the bottom surface of the semiconductor wafer W to measure the temperature of the bottom surface.

[0080] The flash lamp house 5, which is provided above the processing chamber 6, is configured to include a light source made up of multiple (30 in this embodiment) xenon flash lamps FL inside a housing 51, and a reflector 52 provided to cover the light source from above. A lamp light emission window 53 is attached to the bottom of the housing 51 of the flash lamp house 5. The lamp light emission window 53, which forms the floor of the flash lamp house 5, is a plate-shaped quartz window made of quartz. By installing the flash lamp house 5 above the processing chamber 6, the lamp light emission window 53 faces an upper chamber window 63. The flash lamps FL irradiate a heat treatment space 65 with flash light from above the processing chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

[0081] The multiple flash lamps FL are each a rod-shaped lamp having a long cylindrical shape, and are arranged in a plane so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

[0082] A xenon flash lamp FL comprises a rod-shaped glass tube (discharge tube) filled with xenon gas and fitted with an anode and cathode connected to a capacitor at both ends, and a trigger electrode attached to the outer surface of the glass tube. Because xenon gas is an electrical insulator, electricity does not flow through the glass tube under normal conditions, even if a charge is stored in the capacitor. However, when a high voltage is applied to the trigger electrode, causing the insulation to break down, the electricity stored in the capacitor flows instantaneously through the glass tube, exciting the xenon atoms or molecules and emitting light. In such a xenon flash lamp FL, electrostatic energy previously stored in the capacitor is converted into extremely short light pulses of 0.1 to 100 milliseconds, enabling it to emit extremely intense light compared to continuous light sources such as halogen lamps HL. In other words, a flash lamp FL is a pulsed lamp that emits light instantaneously for an extremely short period of time, less than one second. The light emission time of the flash lamp FL can be adjusted by adjusting the coil constant of the lamp power supply that supplies power to the flash lamp FL.

[0083] Furthermore, reflector 52 is provided above the multiple flash lamps FL so as to cover them entirely. The basic function of reflector 52 is to reflect the flash light emitted from the multiple flash lamps FL toward the heat treatment space 65. Reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamps FL) is roughened by blasting.

[0084] The halogen lamp house 4 provided below the processing chamber 6 has a plurality of (40 in this embodiment) halogen lamps HL built in inside a housing 41. The plurality of halogen lamps HL irradiate light from below the processing chamber 6 through a lower chamber window 64 into a heat treatment space 65.

[0085] 8 is a plan view showing the arrangement of multiple halogen lamps HL. In this embodiment, 20 halogen lamps HL are arranged in each of two upper and lower rows. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The 20 halogen lamps HL in both the upper and lower rows are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower rows is a horizontal plane.

[0086] 8, the halogen lamps HL are arranged more densely in the region facing the periphery of the semiconductor wafer W held by the holder 7 on both the upper and lower tiers than in the region facing the center of the semiconductor wafer W. That is, on both the upper and lower tiers, the halogen lamps HL are arranged at a shorter pitch in the periphery of the lamp arrangement than in the center. This allows a greater amount of light to be irradiated onto the periphery of the semiconductor wafer W, which is prone to temperature drop when heated by light irradiation from the halogen lamps HL.

[0087] The lamp group consisting of the halogen lamps HL in the upper row and the lamp group consisting of the halogen lamps HL in the lower row are arranged so as to intersect in a grid pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of each halogen lamp HL in the upper row is perpendicular to the longitudinal direction of each halogen lamp HL in the lower row.

[0088] A halogen lamp HL is a filament-type light source that emits light by passing electricity through a filament placed inside a glass tube, causing it to incandescent. The glass tube is filled with an inert gas, such as nitrogen or argon, containing trace amounts of halogen elements (iodine, bromine, etc.). The introduction of halogen elements makes it possible to set the filament temperature at a high temperature while preventing filament breakage. Therefore, compared to standard incandescent light bulbs, halogen lamps HL have the characteristics of a longer lifespan and the ability to continuously emit strong light. In other words, halogen lamps HL are continuous lamps that emit light continuously for at least one second. Furthermore, because halogen lamps HL are rod-shaped, they have a long lifespan, and by arranging them horizontally, they achieve excellent radiation efficiency toward the semiconductor wafer W above.

[0089] Also, a reflector 43 is provided below the two-tiered halogen lamps HL inside the housing 41 of the halogen lamp house 4 (FIG. 2). The reflector 43 reflects the light emitted from the multiple halogen lamps HL toward the heat treatment space 65.

[0090] The control unit 3 controls the various operating mechanisms provided in the heat treatment apparatus 100. The hardware configuration of the control unit 3 is similar to that of a general computer. That is, the control unit 3 includes a CPU, which is a circuit that performs various arithmetic processing, a ROM, which is a read-only memory that stores basic programs, a RAM, which is a readable and writable memory that stores various information, and a magnetic disk that stores control software, data, and the like. The CPU of the control unit 3 executes a predetermined processing program, thereby causing the processing in the heat treatment apparatus 100 to proceed. Note that, although the control unit 3 is shown in FIG. 1 within the indexer unit 110, this is not limiting and the control unit 3 can be placed at any position within the heat treatment apparatus 100.

[0091] In addition to the above configuration, the heat treatment section 160 is equipped with various cooling structures to prevent excessive temperature rise in the halogen lamp house 4, flash lamp house 5, and processing chamber 6 due to the thermal energy generated by the halogen lamps HL and flash lamps FL during heat treatment of the semiconductor wafer W. For example, a water-cooling pipe (not shown) is provided in the wall of the processing chamber 6. The halogen lamp house 4 and flash lamp house 5 also have an air-cooled structure that creates a gas flow inside to remove heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash lamp house 5 and upper chamber window 63.

[0092] A low-oxygen concentration atmosphere is required inside the processing chamber 6 where the heat treatment of the semiconductor wafer W is performed. For this reason, high-purity nitrogen gas is supplied into the processing chamber 6 through the gas supply hole 81, and exhaust is performed through the gas exhaust hole 86 to maintain the low-oxygen concentration atmosphere inside the processing chamber 6.

[0093] Furthermore, since the transfer robot 150 receives and transfers the semiconductor wafers W, which are at a relatively high temperature after heat treatment, from the processing chamber 6, a low-oxygen concentration atmosphere is also required inside the transfer chamber 170. Therefore, a low-oxygen concentration atmosphere is also required in the cool chambers 131 and 141, the film thickness measurement chamber 301, and the inspection chamber 401, whose atmospheres communicate with the transfer chamber 170 when the gate valves 132, 142, 302, and 402 are opened.

[0094] Of these, the cool chambers 131 and 141 are sealed chambers, so a low-oxygen atmosphere can be maintained by supplying high-purity clean nitrogen gas into the chamber and evacuating the chamber. On the other hand, the film thickness measurement chamber 301 and the inspection chamber 401 are equipped with optical units, imaging cameras, and other components, making them difficult to seal. Therefore, simply supplying high-purity nitrogen gas to the film thickness measurement chamber 301 and the inspection chamber 401 makes it difficult to maintain a low-oxygen atmosphere. As a result, when the gate valve 302 or 402 is opened, an atmosphere containing oxygen gas flows from the film thickness measurement chamber 301 or the inspection chamber 401 into the transfer chamber 170, potentially increasing the oxygen concentration within the transfer chamber 170. This could result in unintended oxidation of the semiconductor wafer W, which is relatively hot after heat treatment. For this reason, in this embodiment, the openings connecting the film thickness measurement chamber 301 and the inspection chamber 401 to the transfer chamber 170 are covered with an inert gas curtain.

[0095] 9 is a diagram showing a mechanism for supplying an inert gas to the film thickness measurement chamber 301 and the transfer chamber 170. The transfer chamber (first chamber) 170 and the film thickness measurement chamber (second chamber) 301 are connected via a gate valve 302. That is, the gate valve 302 is provided at the connection between the transfer chamber 170 and the film thickness measurement chamber 301. An opening 175 (an opening facing the film thickness measurement chamber 301) formed in the transfer chamber 170 and an opening 305 formed in the film thickness measurement chamber 301 form an opening 350 that communicates between the transfer chamber 170 and the film thickness measurement chamber 301. The gate valve 302 opens and closes the opening 350.

[0096] 10 is a view of the opening 350 as viewed from the transfer chamber 170 side. As shown in FIG. 10, the opening 350 has a horizontally elongated rectangular shape when viewed from the front, with its horizontal length greater than its vertical width. A gas supply port 501 is provided near one longitudinal end of the opening 350, and an exhaust port 502 is provided near the other longitudinal end. In the first embodiment, the gas supply port 501 and the exhaust port 502 are provided in the transfer chamber 170. That is, the gas supply port 501 and the exhaust port 502 are provided on the transfer chamber 170 side of the opening 350.

[0097] 9, the tip of pipe 610 is connected to film thickness measurement chamber 301, and the base end is connected to inert gas supply source 601. A mass flow controller 611 and an intake valve 612 are provided along the route of pipe 610. When intake valve 612 is opened, nitrogen gas (N2) is supplied as an inert gas from inert gas supply source 601 to film thickness measurement chamber 301. The flow rate of the supplied nitrogen gas is adjusted by mass flow controller 611.

[0098] Furthermore, exhaust line 690 and film thickness measurement chamber 301 are connected by piping 618. Gas discharged from film thickness measurement chamber 301 to piping 618 is exhausted via exhaust line 690 to an exhaust facility.

[0099] The tip of the pipe 620 is connected to the transfer chamber 170, and the base end is connected to an inert gas supply source 601. A mass flow controller 621 and an intake valve 622 are provided along the route of the pipe 620. When the intake valve 622 is opened, nitrogen gas is supplied from the inert gas supply source 601 to the transfer chamber 170. The flow rate of the supplied nitrogen gas is adjusted by the mass flow controller 621.

[0100] Furthermore, the exhaust line 690 and the transfer chamber 170 are connected by a pipe 628. The gas discharged from the transfer chamber 170 to the pipe 628 is exhausted via the exhaust line 690 to an exhaust facility.

[0101] Furthermore, the tip of the pipe 630 is connected to the gas supply port 501, and the base end is connected to the inert gas supply source 601. A mass flow controller 631 and an intake valve 632 are provided midway along the pipe 630. When the intake valve 632 is opened, nitrogen gas is supplied from the inert gas supply source 601 to the gas supply port 501. The flow rate of the supplied nitrogen gas is adjusted by the mass flow controller 631.

[0102] On the other hand, the exhaust port 502 is connected to an exhaust line 690 by a pipe 638. An exhaust valve 639 is provided midway along the path of the pipe 638. When the exhaust valve 639 is opened, gas is exhausted from the exhaust port 502 through the pipe 638 to the exhaust line 690.

[0103] When both the intake valve 632 and the exhaust valve 639 are opened, nitrogen gas is ejected horizontally from the gas supply port 501 so as to cover the opening 350, and the nitrogen gas ejected from the gas supply port 501 is sucked in by the exhaust port 502. The nitrogen gas ejected from the gas supply port 501 is sucked in by the exhaust port 502, forming a curtain of nitrogen gas that covers the opening 350. This curtain of nitrogen gas flows horizontally. Therefore, the length of the opening 350 parallel to the flow of the nitrogen gas curtain is longer than the width of the opening 350 perpendicular to the flow of the curtain.

[0104] By forming a nitrogen gas curtain to cover the opening 350, the atmosphere in the film thickness measurement chamber 301 is isolated from the atmosphere in the transfer chamber 170. This prevents an atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170, thereby suppressing an increase in the oxygen concentration in the transfer chamber 170. Note that while the above explanation has been about the isolation of the atmosphere between the film thickness measurement chamber 301 and the transfer chamber 170, the same structure is also used to isolate the atmosphere between the inspection chamber 401 and the transfer chamber 170.

[0105] Next, a description will be given of the processing operation of the heat treatment apparatus 100 according to the present invention. The processing procedure for the semiconductor wafer W described below progresses as the control unit 3 controls each operating mechanism of the heat treatment apparatus 100.

[0106] First, a carrier C containing a plurality of unprocessed silicon semiconductor wafers W is placed on one of the three load ports 111 of the indexer unit 110. Then, the transfer robot 120 removes the unprocessed semiconductor wafers W from the carrier C. The transfer robot 120 loads the semiconductor wafers W removed from the carrier C into the alignment chamber 231 of the alignment unit 230. At this time, the gate valve 232 is opened, allowing atmosphere to flow from the indexer unit 110 into the alignment chamber 231, causing a temporary rise in the oxygen concentration inside the alignment chamber 231. After the semiconductor wafers W are loaded into the alignment chamber 231, the gate valve 232 is closed to supply nitrogen into the alignment chamber 231 and exhaust the internal atmosphere, thereby creating a nitrogen atmosphere inside the alignment chamber 231 and reducing the oxygen concentration. The gate valve 233 remains closed.

[0107] The alignment section 230 rotates the semiconductor wafer W loaded into the alignment chamber 231 around a vertical axis in a horizontal plane with its center as the center of rotation, and adjusts the orientation of the semiconductor wafer W by optically detecting a notch or the like.

[0108] Next, the gate valve 233 opens, and the transfer robot 150 transfers the semiconductor wafer W from the alignment chamber 231 to the transfer chamber 170. Then, the gate valve 302 opens the opening 350, and the transfer robot 150 transfers the semiconductor wafer W into the film thickness measurement chamber 301.

[0109] When gate valve 302 closes opening 350, air inlet valve 632 and exhaust valve 639 are also closed, so nitrogen gas is not ejected from gas supply port 501 and no nitrogen gas curtain is formed. Only when gate valve 302 opens opening 350 does control unit 3 open air inlet valve 632 and exhaust valve 639 to eject nitrogen gas from gas supply port 501. The nitrogen gas ejected from gas supply port 501 is sucked in by exhaust port 502. Thus, only when gate valve 302 opens opening 350 is a nitrogen gas curtain formed covering opening 350 formed. Regardless of whether gate valve 302 is open or closed, air inlet valve 612 and air inlet valve 622 are normally always open, so that film thickness measurement chamber 301 and transfer chamber 170 are constantly purged with nitrogen.

[0110] Even if the film thickness measurement chamber 301 is purged with nitrogen, it is not possible to have a sealed chamber structure, and therefore the oxygen concentration inside the film thickness measurement chamber 301 becomes higher than the oxygen concentration inside the transfer chamber 170. When the gate valve 302 opens the opening 350, a nitrogen gas curtain is formed that covers the opening 350, preventing an atmosphere containing oxygen gas from flowing from inside the film thickness measurement chamber 301 into the transfer chamber 170. This makes it possible to suppress an increase in the oxygen concentration inside the transfer chamber 170.

[0111] With a nitrogen gas curtain covering the opening 350, the transfer robot 150 transfers the semiconductor wafer W from the transfer chamber 170 into the film thickness measurement chamber 301. The transfer robot 150 transfers the semiconductor wafer W in a horizontal position. The nitrogen gas curtain also flows horizontally. Therefore, as shown in FIG. 10 , the flow of the semiconductor wafer W transferred by the transfer robot 150 from the transfer chamber 170 to the film thickness measurement chamber 301 via the opening 350 and the flow of the nitrogen gas curtain are parallel to each other.

[0112] If a nitrogen gas curtain is formed that flows vertically (up and down), the semiconductor wafer W and the flow of the nitrogen gas curtain will be perpendicular to each other, and the nitrogen gas curtain will be blocked by the semiconductor wafer W being transported. In this case, part of the opening 350 will not be covered by the nitrogen gas curtain, and the atmosphere containing oxygen gas in the film thickness measurement chamber 301 will flow into the transfer chamber 170 through that part. In this embodiment, the semiconductor wafer W being transported from the transfer chamber 170 to the film thickness measurement chamber 301 and the flow of the nitrogen gas curtain are parallel, so the nitrogen gas curtain will not be blocked by the semiconductor wafer W being transported. As a result, the opening 350 will be reliably covered by the nitrogen gas curtain even during the transport of the semiconductor wafer W, and the atmosphere containing oxygen gas can be more reliably prevented from flowing into the transfer chamber 170.

[0113] The film thickness measurement unit 300 measures the film thickness of a thin film formed on the surface of the semiconductor wafer W loaded into the film thickness measurement chamber 301. In this step, the film thickness measurement unit 300 measures the film thickness of the semiconductor wafer W before it is subjected to heat treatment in the heat treatment unit 160. Even before heat treatment, a natural oxide film is formed on the surface of the silicon semiconductor wafer W, and the film thickness measurement unit 300 measures the film thickness of this natural oxide film. During film thickness measurement, the gate valve 302 closes the opening 350, so that no atmosphere flows from the film thickness measurement chamber 301 into the transfer chamber 170, and the nitrogen gas is stopped from being ejected from the gas supply port 501.

[0114] After the pre-processing film thickness measurement is completed, the gate valve 302 opens the opening 350 again, and the transfer robot 150 transfers the semiconductor wafer W from the film thickness measurement chamber 301 to the transfer chamber 170. At this time, a nitrogen gas curtain is formed to cover the opening 350, preventing an atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170.

[0115] Next, the gate valve 402 is opened, and the transfer robot 150 transfers the semiconductor wafer W from the transfer chamber 170 into the inspection chamber 401. At this time, while the gate valve 402 is opening the opening that connects the transfer chamber 170 and the inspection chamber 401, a curtain of nitrogen gas is formed to cover the opening. This prevents an atmosphere containing oxygen gas from flowing from the inspection chamber 401 into the transfer chamber 170.

[0116] The inspection unit 400 inspects the backside of the semiconductor wafer W that has been loaded into the inspection chamber 401 for scratches. The gate valve 402 is closed during the backside inspection. After the backside inspection of the semiconductor wafer W is completed, the gate valve 402 is opened again and the transfer robot 150 transfers the semiconductor wafer W from the inspection chamber 401 to the transfer chamber 170. At this time, a nitrogen gas curtain is still formed, preventing an atmosphere containing oxygen gas from flowing from inside the inspection chamber 401 into the transfer chamber 170. Then, the gate valve 185 is opened and the transfer robot 150 transfers the semiconductor wafer W into the processing chamber 6 of the heat treatment unit 160.

[0117] Prior to loading the semiconductor wafer W into the processing chamber 6, the gas supply valve 84 is opened, and the exhaust valves 89 and 192 are also opened to start supplying and exhausting gas to and from the processing chamber 6. When the valve 84 is opened, nitrogen gas is supplied to the heat treatment space 65 through the gas supply hole 81. When the valve 89 is opened, the gas inside the processing chamber 6 is exhausted through the gas exhaust hole 86. As a result, the nitrogen gas supplied from the upper part of the heat treatment space 65 inside the processing chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65. When the valve 192 is opened, the gas inside the processing chamber 6 is also exhausted from the transfer opening 66. Furthermore, the atmosphere around the drive unit of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown).

[0118] Next, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W to be processed is loaded by the transfer robot 150 into the heat treatment space 65 in the processing chamber 6 through the transfer opening 66. The transfer robot 150 advances the transfer hand 151a (or transfer hand 151b) holding the unprocessed semiconductor wafer W to a position directly above the holder 7 and stops it. Then, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally from the retracted position to the transfer operation position and rise, causing the lift pins 12 to pass through the through holes 79 and protrude from the upper surface of the holding plate 75 of the susceptor 74 to receive the semiconductor wafer W. At this time, the lift pins 12 rise to a position higher than the upper ends of the substrate support pins 77.

[0119] After the unprocessed semiconductor wafer W is placed on the lift pins 12, the transfer robot 150 causes the transfer hand 151a to withdraw from the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. Then, the pair of transfer arms 11 descend, transferring the semiconductor wafer W from the transfer mechanism 10 to the susceptor 74 of the holder 7, where it is held horizontally from below. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on the holding plate 75 and held on the susceptor 74. The semiconductor wafer W is held on the holder 7 with its front surface to be processed facing upward. A predetermined gap is formed between the back surface (the main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11, which have descended to below the susceptor 74, are retracted to a retracted position, i.e., inside the recess 62, by the horizontal movement mechanism 13.

[0120] After the semiconductor wafer W is loaded into the processing chamber 6 and held on the susceptor 74, the 40 halogen lamps HL are simultaneously turned on to begin preheating (assisted heating). The halogen light emitted from the halogen lamps HL passes through the lower chamber window 64 and the susceptor 74, both made of quartz, and is irradiated onto the underside of the semiconductor wafer W. The semiconductor wafer W is preheated by being irradiated with light from the halogen lamps HL, and its temperature rises. Note that the transfer arm 11 of the transfer mechanism 10 is retracted inside the recess 62, so it does not interfere with heating by the halogen lamps HL.

[0121] When preheating is performed by the halogen lamps HL, the temperature of the semiconductor wafer W is measured by the lower radiation thermometer 20. That is, the lower radiation thermometer 20 receives infrared light radiated from the underside of the semiconductor wafer W held on the susceptor 74 through the openings 78 and measures the wafer temperature during heating. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 controls the output of the halogen lamps HL while monitoring whether the temperature of the semiconductor wafer W, which is heated by the light irradiation from the halogen lamps HL, has reached a predetermined preheating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamps HL based on the value measured by the lower radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1.

[0122] After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamps HL to maintain the temperature of the semiconductor wafer W at approximately the preheating temperature T1.

[0123] By performing preheating using the halogen lamps HL in this manner, the temperature of the entire semiconductor wafer W is raised uniformly to the preheating temperature T1. During preheating using the halogen lamps HL, the temperature of the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely, tends to be lower than that of the central portion, but the arrangement density of the halogen lamps HL in the halogen lamp house 4 is higher in the region facing the peripheral portion of the semiconductor wafer W than in the region facing the central portion of the semiconductor wafer W. As a result, a greater amount of light is irradiated onto the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely, and the in-plane temperature distribution of the semiconductor wafer W during the preheating stage can be made uniform.

[0124] When a predetermined time has elapsed since the temperature of the semiconductor wafer W reached the preheating temperature T1, the flash lamps FL irradiate the surface of the semiconductor wafer W with flash light. At this time, part of the flash light emitted from the flash lamps FL heads directly into the processing chamber 6, and the other part is reflected by the reflector 52 and then heads into the processing chamber 6, and the semiconductor wafer W is flash-heated by the irradiation of these flash lights.

[0125] Flash heating is performed by irradiating a flash of light (flash of light) from flash lamps FL, which allows the surface temperature of the semiconductor wafer W to rise in a short time. That is, the flash of light irradiated from the flash lamps FL is an extremely short, intense flash of light with an irradiation time of approximately 0.1 milliseconds to 100 milliseconds, in which electrostatic energy previously stored in a capacitor is converted into an extremely short light pulse. The surface temperature of the semiconductor wafer W flash-heated by the irradiation of the flash of light from the flash lamps FL instantaneously rises to the processing temperature T2 and then rapidly drops.

[0126] After the flash heating process is completed, the halogen lamps HL are turned off after a predetermined time has elapsed. This causes the temperature of the semiconductor wafer W to rapidly decrease from the preheating temperature T1. The temperature of the semiconductor wafer W during this decrease is measured by the lower radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors, based on the measurement result of the lower radiation thermometer 20, whether the temperature of the semiconductor wafer W has decreased to a predetermined temperature. After the temperature of the semiconductor wafer W has decreased to or below the predetermined temperature, the pair of transfer arms 11 of the transfer mechanism 10 again move horizontally from the retracted position to the transfer operation position and rise, causing the lift pins 12 to protrude from the upper surface of the susceptor 74 and receive the heat-treated semiconductor wafer W from the susceptor 74. Next, the transfer opening 66, which had been closed by the gate valve 185, is opened, and the processed semiconductor wafer W placed on the lift pins 12 is transported by the transfer hand 151b (or transfer hand 151a) of the transfer robot 150. Specifically, the transfer robot 150 advances the transfer hand 151b to a position directly below the semiconductor wafer W pushed up by the lift pins 12 and stops the transfer hand 151b. Then, the pair of transfer arms 11 descend, and the flash-heated semiconductor wafer W is handed over to and placed on the transfer hand 151b. Thereafter, the transfer robot 150 causes the transfer hand 151b to withdraw from the processing chamber 6, and transfers the heat-treated semiconductor wafer W into the transfer chamber 170.

[0127] Next, the gate valve 132 opens, and the transfer robot 150 loads the heat-treated semiconductor wafer W into the cool chamber 131 of the cooling unit 130. The cooling unit 130 cools the semiconductor wafer W, which is at a relatively high temperature immediately after the heat treatment, to near room temperature. The cooling process of the semiconductor wafer W may also be performed in the cool chamber 141 of the cooling unit 140.

[0128] After the cooling process is completed, the transfer robot 150 transfers the cooled semiconductor wafer W from the cool chamber 131 to the transfer chamber 170. Then, the gate valve 302 opens the opening 350 again, and the transfer robot 150 transfers the semiconductor wafer W into the film thickness measurement chamber 301. At this time, while the gate valve 302 is opening the opening 350, a nitrogen gas curtain is formed covering the opening 350, thereby preventing an atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170.

[0129] The film thickness measurement unit 300 measures the film thickness of a thin film formed on the surface of the semiconductor wafer W loaded into the film thickness measurement chamber 301. In this step, the film thickness measurement unit 300 measures the film thickness of the semiconductor wafer W after heat treatment in the heat treatment unit 160. When the film formation process is performed by flash heating in the heat treatment unit 160, the film thickness of the formed thin film can be calculated by subtracting the film thickness measured before the process from the film thickness measured after the process.

[0130] After the film thickness measurement after processing is completed, the transfer robot 150 transfers the semiconductor wafer W from the film thickness measurement chamber 301 to the transfer chamber 170. Then, the gate valve 293 is opened and the transfer robot 150 transfers the semiconductor wafer W into the warpage measurement chamber 291 of the warpage measurement unit 290. After the semiconductor wafer W is transferred into the warpage measurement chamber 291, the gate valve 293 is closed and the warpage measurement unit 290 measures the warpage occurring in the semiconductor wafer W after the heat treatment.

[0131] After the measurement of the wafer warpage is completed, the gate valve 292 is opened. Then, the delivery robot 120 takes out the semiconductor wafer W from the warpage measurement chamber 291. The delivery robot 120 stores the semiconductor wafer W taken out of the warpage measurement chamber 291 back into the carrier C. In this manner, the heat treatment of one semiconductor wafer W is completed.

[0132] In the first embodiment, the film thickness measurement chamber 301 and the inspection chamber 401, which have relatively high oxygen concentrations, are connected to the transfer chamber 170, which requires an atmosphere with a low oxygen concentration. The oxygen concentrations of the cool chambers 131 and 141 connected to the transfer chamber 170 are approximately the same as the oxygen concentration in the transfer chamber 170. The oxygen concentration in the processing chamber 6 of the heat treatment unit 160 is lower than the oxygen concentration in the transfer chamber 170.

[0133] When gate valve 302 opens opening 350, there is a risk that an atmosphere containing oxygen gas may flow from inside film thickness measurement chamber 301 into transfer chamber 170, so a nitrogen gas curtain is formed to cover opening 350. This makes it possible to prevent the atmosphere containing oxygen gas from flowing from inside film thickness measurement chamber 301 into transfer chamber 170, and suppress an increase in the oxygen concentration inside transfer chamber 170.

[0134] In particular, in the first embodiment, the flow of the nitrogen gas curtain and the semiconductor wafer W being transferred between the transfer chamber 170 and the film thickness measurement chamber 301 are parallel, so the nitrogen gas curtain is not blocked by the transferred semiconductor wafer W. Therefore, the opening 350 is reliably covered by the nitrogen gas curtain even during transfer of the semiconductor wafer W, making it possible to more reliably prevent an atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170. Similarly, a nitrogen gas curtain is also formed to cover the opening communicating between the transfer chamber 170 and the inspection chamber 401, making it possible to prevent an atmosphere containing oxygen gas from flowing from the inspection chamber 401 into the transfer chamber 170.

[0135] Second Embodiment Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the second embodiment is generally the same as that of the first embodiment (FIG. 1). The processing procedure for the semiconductor wafer W in the second embodiment is also the same as that of the first embodiment. In the first embodiment, a nitrogen gas curtain is formed on the transfer chamber 170 side, whereas in the second embodiment, a nitrogen gas curtain is formed on both the transfer chamber 170 and the film thickness measurement chamber 301.

[0136] Fig. 11 is a diagram showing a curtain formation mechanism in the second embodiment. In Fig. 11, the same elements as those in the first embodiment (Fig. 9) are assigned the same reference numerals. A gate valve 302 is provided at the connection between the transfer chamber 170 and the film thickness measurement chamber 301. The gate valve 302 opens and closes an opening 350 that connects the transfer chamber 170 and the film thickness measurement chamber 301.

[0137] In the second embodiment, on one of the two sides sandwiching the opening 350, on the transfer chamber 170 side, a first gas supply port 701 is provided near one end of the opening 350 in the longitudinal direction, and a first exhaust port 702 is provided near the other end. Furthermore, on one of the two sides sandwiching the opening 350, on the film thickness measurement chamber 301 side, a second exhaust port 712 is provided near one end of the opening 350 in the longitudinal direction, and a second gas supply port 711 is provided near the other end. In other words, both the transfer chamber 170 and the film thickness measurement chamber 301 are provided with gas supply ports and exhaust ports.

[0138] In the transfer chamber 170, nitrogen gas is ejected horizontally from the first gas supply port 701 so as to cover the opening 350, and the nitrogen gas ejected from the first gas supply port 701 is sucked in by the first exhaust port 702. The nitrogen gas ejected from the first gas supply port 701 is sucked in by the first exhaust port 702, thereby forming a first curtain of nitrogen gas that covers the opening 350. The first curtain of nitrogen gas flows horizontally from the top to the bottom of the page in FIG.

[0139] Meanwhile, in film thickness measurement chamber 301, nitrogen gas is ejected horizontally from second gas supply port 711 so as to cover opening 350, and the nitrogen gas ejected from second gas supply port 711 is sucked in by second exhaust port 712. The nitrogen gas ejected from second gas supply port 711 is sucked in by second exhaust port 712, thereby forming a second curtain of nitrogen gas that covers opening 350. The second curtain of nitrogen gas flows horizontally from the bottom to the top of the page in FIG. 11 . In other words, the flow direction of the first curtain formed in transfer chamber 170 is opposite to the flow direction of the second curtain formed in film thickness measurement chamber 301.

[0140] In the second embodiment, the first and second curtains are also formed only when the gate valve 302 opens the opening 350. The flow of the first and second curtains of nitrogen gas is parallel to the flow of the semiconductor wafer W transferred by the transfer robot 150 between the transfer chamber 170 and the film thickness measurement chamber 301 via the opening 350. Therefore, the first and second curtains of nitrogen gas are not blocked by the semiconductor wafer W being transferred.

[0141] In the second embodiment, nitrogen gas curtains are formed on both sides of opening 350. That is, a first curtain is formed on one side of opening 350, and a second curtain is formed on the other side. This ensures that opening 350 is covered from both sides by the first and second nitrogen gas curtains, more reliably preventing an atmosphere containing oxygen gas from flowing from film thickness measurement chamber 301 into transfer chamber 170.

[0142] In particular, in the second embodiment, the flow direction of the first curtain formed in transfer chamber 170 and the flow direction of the second curtain formed in film thickness measurement chamber 301 are opposite. Because the first curtain of nitrogen gas is formed parallel to the longitudinal direction of opening 350, its atmosphere blocking effect is weaker near first exhaust port 702 than near first gas supply port 701. Similarly, because the second curtain of nitrogen gas is also formed parallel to the longitudinal direction of opening 350, its atmosphere blocking effect is weaker near second exhaust port 712 than near second gas supply port 711. By making the flow directions of the first curtain and the second curtain opposite, the atmosphere blocking effect of the second curtain is strong in areas where the atmosphere blocking effect of the first curtain is weak, and conversely, the atmosphere blocking effect of the first curtain is strong in areas where the atmosphere blocking effect of the second curtain is weak. In other words, the first curtain and the second curtain mutually complement each other in their atmosphere blocking effects, making it possible to more reliably prevent the atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170.

[0143] <Modification> Although the embodiments of the present invention have been described above, various modifications can be made to the present invention without departing from the spirit and scope of the present invention. For example, in the first embodiment, a nitrogen gas curtain is formed on the transfer chamber 170 side of the opening 350. However, instead, a nitrogen gas curtain may be formed on the film thickness measurement chamber 301 side. This also covers the opening 350 with a nitrogen gas curtain, thereby preventing an atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170. However, if a nitrogen gas curtain is formed on the film thickness measurement chamber 301 side, an atmosphere with a relatively high oxygen concentration (the atmosphere residing at the opening 305) that is retained between the curtain and the gate valve 302 will flow into the transfer chamber 170. Therefore, it is preferable to form a nitrogen gas curtain on the transfer chamber 170 side as in the first embodiment.

[0144] Furthermore, in the above embodiment, the nitrogen gas curtain flows in the horizontal direction, but this is not limiting, and the curtain may flow in another direction as long as it is parallel to the semiconductor wafer W being transported by the transport robot 150. For example, when the transport robot 150 transports the semiconductor wafer W in an upright position (a position in which the normal line coincides with the horizontal direction), the nitrogen gas curtain may flow in the vertical direction.

[0145] In the above embodiment, a nitrogen gas curtain is formed to cover the openings between the transfer chamber 170 and the film thickness measurement chamber 301 and the inspection chamber 401. However, a nitrogen gas curtain may be formed to cover the openings between the transfer chamber 170 and the other chambers (the cool chambers 131 and 141, the alignment chamber 231, and the warpage measurement chamber 291). This prevents an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from each chamber. However, as described above, it is difficult to make the film thickness measurement chamber 301 and the inspection chamber 401 airtight, making it difficult to maintain a low-oxygen concentration atmosphere within the chambers. Therefore, it is preferable to form a nitrogen gas curtain to cover the openings between the transfer chamber 170 and the film thickness measurement chamber 301 and the inspection chamber 401.

[0146] Furthermore, in the above embodiment, a curtain of nitrogen gas is formed, but this is not limiting, and a curtain of other inert gases such as argon or helium may also be formed.

[0147] Furthermore, in the above embodiment, the flash lamp house 5 is provided with 30 flash lamps FL, but this is not limited to this and the number of flash lamps FL can be any number. Furthermore, the flash lamps FL are not limited to xenon flash lamps and may be krypton flash lamps. Furthermore, the number of halogen lamps HL provided in the halogen lamp house 4 is not limited to 40 and can be any number.

[0148] Furthermore, in the above embodiment, the semiconductor wafer W is preheated using a filament-type halogen lamp HL as a continuously lit lamp that emits light continuously for one second or more, but this is not limited to this, and preheating may be performed using a discharge arc lamp (e.g., a xenon arc lamp) or an LED lamp as a continuously lit lamp instead of the halogen lamp HL. [Explanation of symbols]

[0149] 3. Control Unit 4 Halogen lamp house 5. Flash Lamp House 6 Processing Chambers 7 Holding part 10 Transfer mechanism 65 Heat Treatment Space 74 Susceptor 100 Heat treatment device 110 Indexer section 111 Loading Port 120 Delivery Robot 131,141 Cool Chamber 150 Transport Robot 160 Heat Treatment Section 170 Transfer Chamber 231 Alignment Chamber 291 Warpage Measurement Chamber 301 Film Thickness Measurement Chamber 302,402 Gate valve 350 opening 401 Inspection Chamber 501 Gas supply port 502 exhaust port 632 Air intake valve 639 Exhaust valve 701 First gas supply port 702 No. 1 exhaust port 711 Second gas supply port 712 Second exhaust port C Carrier FL flash lamp HL halogen lamp W Semiconductor wafer

Claims

1. A heat treatment apparatus for performing a heat treatment on a substrate, a first chamber provided with a transfer robot for transferring a substrate; a second chamber connected to the first chamber; a gate valve provided at a connecting portion between the first chamber and the second chamber, for opening and closing an opening that communicates between the first chamber and the second chamber; a gas supply unit that ejects an inert gas so as to cover the opening; an exhaust unit that sucks in and exhausts the inert gas ejected from the gas supply unit; Equipped with the exhaust unit sucks in the inert gas ejected from the gas supply unit, thereby forming a curtain of inert gas that covers the opening, a flow of the curtain from the gas supply unit to the exhaust unit is parallel to a substrate transferred between the first chamber and the second chamber via the opening by the transfer robot; the gas supply unit ejects the inert gas only when the gate valve opens the opening, the gas supply unit includes a first gas supply port provided in the first chamber and a second gas supply port provided in the second chamber; the exhaust unit includes a first exhaust port provided in the first chamber and a second exhaust port provided in the second chamber; the inert gas ejected from the first gas supply port is sucked by the first exhaust port, thereby forming a first curtain of the inert gas on the first chamber side; 10. A heat treatment apparatus comprising: a heat treatment device for forming a second curtain of inert gas on the second chamber side by sucking in the inert gas ejected from the second gas supply port through the second exhaust port;

2. 2. The heat treatment apparatus according to claim 1, A heat treatment apparatus, characterized in that the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other.

3. In the heat treatment device according to claim 1 or claim 2, A heat treatment apparatus, characterized in that the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain.

4. 4. The heat treatment apparatus according to claim 1, The heat treatment apparatus is characterized in that the second chamber has a film thickness measurement unit that measures the film thickness of a thin film formed on a substrate, or a back surface inspection unit that inspects the back surface of the substrate for scratches.

5. 5. The heat treatment apparatus according to claim 1, The heat treatment apparatus further comprises a treatment chamber connected to the first chamber, the treatment chamber irradiating the substrate with light to heat the substrate.

6. 6. The heat treatment apparatus according to claim 1, The heat treatment apparatus is characterized in that the curtain flows in a horizontal direction.

7. 7. The heat treatment apparatus according to claim 1, 10. The heat treatment apparatus according to claim 9, wherein the inert gas ejected from the gas supply unit is nitrogen gas.

8. A heat treatment method for performing a heat treatment on a substrate, comprising: an opening step in which a gate valve provided at a connection portion between a first chamber provided with a transfer robot for transferring a substrate and a second chamber connected to the first chamber opens an opening communicating between the first chamber and the second chamber; a curtain forming step of forming a curtain of inert gas to cover the opening only when the gate valve opens the opening; Equipped with a flow of the curtain formed in the curtain forming step is parallel to a flow of the substrate transported between the first chamber and the second chamber via the opening by the transport robot; A heat treatment method characterized in that, in the curtain forming step, a first curtain of inert gas is formed on the first chamber side, and a second curtain of inert gas is formed on the second chamber side.

9. The heat treatment method according to claim 8, A heat treatment method, characterized in that the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other.

10. The heat treatment method according to claim 8 or claim 9, A heat treatment method, characterized in that the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain.

11. The heat treatment method according to any one of claims 8 to 10, A heat treatment method characterized in that in the second chamber, thickness measurement of a thin film formed on the substrate or inspection of scratches on the back surface of the substrate is performed.

12. The heat treatment method according to any one of claims 8 to 11, The thermal processing method, wherein the first chamber is further connected to a processing chamber for irradiating light onto a substrate to perform a heat treatment on the substrate.

13. The heat treatment method according to any one of claims 8 to 12, The heat treatment method is characterized in that the curtain flows in a horizontal direction.

14. The heat treatment method according to any one of claims 8 to 13, The heat treatment method according to claim 1, wherein the inert gas forming the curtain is nitrogen gas.

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