Substrate support and plasma processing apparatus

Abstract

To provide a technology to suppress electrical discharges between a substrate mounting table and a substrate.SOLUTION: A disclosed substrate support has a base and an electrostatic chuck located on the base. The electrostatic chuck is a laminate that is located on a base, the laminate has a top surface and sides, and the laminate includes a first insulating layer, a second insulating layer, and an electrode layer disposed between the first and second insulating layers, and the electrode layer includes a laminate covered by one or both of the first and second insulating layers, a first coating layer covering the top and sides of the laminate, and a second coating layer covering the first coating layer and containing ceramic material.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] SUMMARY An exemplary embodiment of the present disclosure relates to a substrate stage and a substrate processing apparatus. [Background technology]

[0002] A substrate (wafer) placed on a mounting table can be held by an electrostatic chuck. The electrostatic chuck electrostatically attracts the wafer to the mounting table using electrostatic force. The mounting device disclosed in Patent Document 1 includes a mounting body and an electrostatic chuck. A workpiece is placed on the mounting body. The electrostatic chuck includes an insulating layer and an electrode layer embedded in the insulating layer. In the electrostatic chuck, when a voltage is applied to the electrode layer, electrostatic force is generated between the electrode layer and the workpiece, and the workpiece is electrostatically attracted to the surface of the insulating layer. The electrostatic chuck layer, which is an insulating layer on the surface of the electrode layer, is a 200 to 280 μm thick yttrium oxide sprayed layer formed by plasma spraying. The surface of the electrostatic chuck layer is formed to a surface roughness that depends on the particle size of the sprayed yttrium oxide. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-117982 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing discharge between a substrate mounting table and a substrate. [Means for solving the problem]

[0005] In an exemplary embodiment, a substrate support is provided. The substrate support includes a base and an electrostatic chuck disposed on the base. The electrostatic chuck includes a stack disposed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, a first covering layer covering the top surface and the side surface of the stack, and a second covering layer covering the first covering layer and including a ceramic material. [Effects of the Invention]

[0006] According to one exemplary embodiment, a technique for suppressing discharge between a substrate mounting table and a substrate can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] 1A and 1B are diagrams illustrating an example of a configuration of a substrate mounting table according to an illustrative embodiment. [Figure 2] 2 is a diagram showing an example of the configuration of an end portion of the substrate placing table shown in FIG. 1. FIG. [Figure 3] 2 is a diagram showing an example of a configuration of a part of the substrate mounting table shown in FIG. 1. FIG. [Figure 4] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 5] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 6] FIG. 6 is a diagram for explaining a method for forming the coating layer shown in each of FIGS. [Figure 7] 2 is a diagram showing an example of the configuration of a substrate processing apparatus provided with the substrate mounting table shown in FIG. 1. FIG. [Figure 8] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 9] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 10] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 11] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 12] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 13] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 14] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 15] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 16] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 17] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 18] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 19] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 20] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 21] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 22] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 23] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. [Figure 24] 1. FIG. 4 is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described below. In the exemplary embodiments, a substrate mounting table is provided. The substrate mounting table includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a stacking portion, an intermediate layer, and a covering layer. The stacking portion is provided on the base. The intermediate layer is provided on the stacking portion. The covering layer is provided on the intermediate layer. The stacking portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is made of ceramics. As such, the second layer provided on the electrode layer of the electrostatic chuck is known to have a relatively high dielectric strength as a resin, so the thickness of the second layer can be sufficiently reduced while maintaining a predetermined dielectric strength. Therefore, the combined capacitance of the electrostatic chuck is increased, and the potential between the base and the substrate placed on the substrate mounting table is reduced, which reduces the voltage phase difference when a voltage is applied to the substrate mounting table at a relatively low frequency, thereby suppressing the occurrence of discharge between the substrate and the substrate mounting table.

[0009] In an exemplary embodiment, the first layer is a resin layer.

[0010] In an exemplary embodiment, the base includes a main body and a sidewall. The electrostatic chuck is disposed on the main body and the sidewall. The first and second layers each have a diameter greater than the diameter of the main body. The first and second layers extend over the base to overlap the sidewall.

[0011] In an exemplary embodiment, the intermediate layer includes an end region that covers the side surface of the laminate, the end region being in contact with the base and having a tapered shape that narrows in a direction away from the laminate.

[0012] In an exemplary embodiment, the taper angle of the end region is less than or equal to 45°.

[0013] In an exemplary embodiment, the first layer material and the second layer material are either a polyimide resin, a silicone resin, an epoxy resin, or an acrylic resin.

[0014] In an exemplary embodiment, the substrate support further includes an edge region. The edge region covers a side surface of the laminate. The edge region is made of a material selected from the group consisting of resin and insulating material. The first layer is an insulating layer or a resin layer.

[0015] In an exemplary embodiment, when the first layer is an insulating layer, the material of the first layer is ceramic. When the first layer is a resin layer, the material of the first layer is any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin. The material of the second layer is any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin.

[0016] In an exemplary embodiment, the end regions of the resin have a tapered shape that narrows in a direction away from the laminate.

[0017] In an exemplary embodiment, the base has an insulating region on a surface of the base, the insulating region having a portion extending along a side surface of the laminate, and the resin edge region being provided between the side surface of the laminate and the insulating region.

[0018] In an exemplary embodiment, the base includes a main body and a sidewall provided on a side of the base. The electrostatic chuck is disposed on the main body and the sidewall. The inner diameter of each of the first and second layers is smaller than the inner diameter of the main body. The first and second layers extend on the base to overlap the sidewall. The surface of the sidewall has a portion extending along the side of the stack. An end region of the resin is provided between the side of the stack and the portion on the surface of the sidewall.

[0019] In an exemplary embodiment, the diameter of the electrode layer is smaller than the diameter of each of the first and second layers.

[0020] In an exemplary embodiment, the intermediate layer covers the entire surface of the laminate that is mounted on the base.

[0021] In an exemplary embodiment, the intermediate layer covers a portion of the sidewall.

[0022] In an exemplary embodiment, the covering layer includes a base layer and a plurality of protrusions. The base layer is in close contact with the intermediate layer. The plurality of protrusions are provided on an upper surface of the base layer.

[0023] In an exemplary embodiment, the surface roughness of the upper surface of the underlayer is 0.05 to 0.5 μm.

[0024] In an exemplary embodiment, the intermediate layer includes a substrate and a plurality of particles dispersed in the substrate, the plurality of particles including exposed portions that are exposed from the substrate and that contact the second layer and the coating layer.

[0025] In an exemplary embodiment, the substrate material includes a resin or a silane-based agent, and the particulate material is a ceramic. The silane-based agent is, for example, an inorganic material containing silicon and oxygen atoms.

[0026] In an exemplary embodiment, a substrate processing apparatus is provided, the substrate processing apparatus including any of the substrate support stages described above.

[0027] The substrate processing apparatus according to the exemplary embodiment includes a high frequency power supply, which is connected to a substrate mounting table and supplies high frequency power of 3 MHz or less to the substrate mounting table.

[0028] Various exemplary embodiments will be described in detail below with reference to the drawings. The same or corresponding parts in the drawings will be denoted by the same reference numerals. First, with reference to FIG. 1, one embodiment of the configuration of a substrate mounting table 2 will be described.

[0029] The substrate mounting table 2 is provided in a substrate processing apparatus 1. The substrate processing apparatus 1 may be, for example, but is not limited to, a parallel plate type plasma processing apparatus. The substrate processing apparatus 1 is fully equipped with the equipment necessary for plasma processing of a substrate (hereinafter sometimes referred to as a wafer) mounted on the substrate mounting table 2, but FIG. 1 does not show the detailed configuration of the substrate processing apparatus 1. The detailed configuration of the substrate processing apparatus 1 will be described later with reference to FIG. 7.

[0030] The substrate mounting table 2 has a generally circular disk shape extending so as to intersect with the central axis AX. The substrate mounting table 2 includes an electrostatic chuck 3 and a base 4. The electrostatic chuck 3 is provided on the base 4. The electrostatic chuck 3 includes a stacked portion 3a, an intermediate layer 3b, and a covering layer 3c. The stacked portion 3a is provided on the base 4. The intermediate layer 3b is provided on the stacked portion 3a. The covering layer 3c is provided on the intermediate layer 3b.

[0031] The laminated portion 3a includes a layer 3a1 (first layer), an electrode layer 3a2, and a layer 3a3 (second layer). The layer 3a1 is provided on a base 4. The electrode layer 3a2 is provided on the layer 3a1. The layer 3a3 is provided on the electrode layer 3a2. The layer 3a3 is a resin layer.

[0032] As shown in FIG. 2, the intermediate layer 3b includes a base 3b1 and a plurality of granules 3b2, which are dispersed throughout the base 3b1. A portion of the granules 3b2 is exposed from the base 3b1 toward the layer 3a3 and coating layer 3c (more specifically, the base layer 3c1) that are in contact with the base 3b1. The granules 3b2 include exposed portions that are exposed from the base 3b1. These exposed portions are in contact with the layer 3a3 and the coating layer 3c. Therefore, the intermediate layer 3b and the layer 3a3, and the intermediate layer 3b and the coating layer 3c (more specifically, the base layer 3c1) are bonded together with strong bonding forces, improving adhesion. The coating layer 3c includes a base layer 3c1 and a plurality of protrusions 3c2. The protrusions 3c2 are provided on the upper surface 31 of the base layer 3c1. When a substrate is placed on the substrate mounting table 2, the substrate is in contact with the plurality of protrusions 3c2.

[0033] Returning to Figure 1, the intermediate layer 3b covers the entire surface (including the side surface SF2 and the top surface SF3 of the laminated portion 3a) of the laminated portion 3a provided on the base 4. The covering layer 3c covers the entire surface of the intermediate layer 3b provided on the base 4.

[0034] Intermediate layer 3b is provided between layer 3a3 and coating layer 3c (particularly, base layer 3c1). Intermediate layer 3b is in close contact with layer 3a3 and base layer 3c1. Base 3b1 and granular material 3b2 are in contact with base layer 3c1 and layer 3a3.

[0035] The thickness TH1 corresponds to the sum of the thickness of the laminated portion 3a and the thickness of the intermediate layer 3b, the thickness TH2 corresponds to the thickness of the laminated portion 3a, and the thickness TH3 corresponds to the thickness of the covering layer 3c.

[0036] The base 4 includes a main body 4a and sidewalls 4b1 and 4b2. The sidewalls 4b1 and 4b2 are provided on a side surface SF1 of the main body 4a. The electrostatic chuck 3 is disposed on the main body 4a and the sidewalls 4b1 and 4b2.

[0037] The side wall portion 4b1 corresponds to the outer wall of the base 4. The side wall portion 4b2 corresponds to a sleeve that defines a hole GT that penetrates the electrostatic chuck 3 and the base 4 within the base 4. The hole GT may be a hole through which gas flows, or a hole provided to allow a pin to move up and down when the wafer W is placed on the substrate mounting table 2.

[0038] 3, a contact pin 4d is provided on the base 4. The contact pin 4d is electrically connected to the electrode layer 3a2. Inside the base 4, the contact pin 4d is covered by a sleeve 4c. The configuration shown in FIG. 3 is included in the region ER2 shown in FIG.

[0039] The configuration of the end portion of the substrate mounting table 2 will be described with reference to Fig. 2. The end portion of the substrate mounting table 2 shown in Fig. 2 is a configuration included in the region ER1 shown in Fig. 1. The end portion of the substrate mounting table 2 is a portion including a side wall portion 4b1 corresponding to the outer wall portion of the base 4, and a portion including a side wall portion 4b2 corresponding to the sleeve that defines the hole GT.

[0040] The intermediate layer 3b has an edge region 3bb at the edge of the substrate mounting table 2. The edge region 3bb covers the side surface SF2 of the stacked portion 3a. The edge region 3bb is in contact with the base 4, more specifically, with the side wall portion 4b1 and the side wall portion 4b2.

[0041] The edge region 3bb has a tapered shape that narrows in the direction away from the laminated portion 3a. In other words, the edge region 3bb has a thickness that decreases in the direction away from the laminated portion 3a. The thickness of the edge region 3bb decreases approximately linearly in the direction away from the laminated portion 3a and converges to a thickness TH4.

[0042] More specifically, the thickness of the end region 3bb converges to a thickness TH4 at a location separated from the stacked portion 3a by approximately a length LT3, which corresponds to the width of the joint between the end region 3bb and the side wall portions 4b1 and 4b2.

[0043] The tapered shape of the end region 3bb is not limited to the approximately linear tapered shape shown in Fig. 2. For example, the tapered shape of the end region 3bb may be either a concave tapered shape (with a negative curvature) like the end region 3bb shown in Fig. 4, or a convex tapered shape (with a positive curvature) like the end region 3bb shown in Fig. 5.

[0044] The diameter of electrode layer 3a2 is smaller than the diameters of layers 3a1 and 3a3, respectively. Length LT1 corresponds to half the difference between the diameter of electrode layer 3a2 and the diameters of layers 3a1 and 3a3, respectively.

[0045] The diameter of each of the layers 3a1 and 3a3 is larger than the diameter of the main body portion 4a. The length LT2 corresponds to half the difference between the diameter of each of the layers 3a1 and 3a3 and the diameter of the main body portion 4a. In this manner, the layers 3a1 and 3a3 extend on the base 4 so as to overlap with the side wall portions 4b1 and 4b2. The intermediate layer 3b covers a portion of the side wall portions 4b1 and 4b2.

[0046] According to the substrate mounting table 2 having the above configuration, the layers 3a1 and 3a3 sandwiching the electrode layer 3a2 of the electrostatic chuck 3 have high dielectric strength, so that the thicknesses of the layers 3a1 and 3a3 can be sufficiently reduced while maintaining a predetermined dielectric strength. This increases the combined capacitance of the electrostatic chuck 3, thereby reducing the potential between the base 4 and the substrate mounted on the substrate mounting table 2. Therefore, when a voltage is applied to the substrate mounting table 2 at a relatively low frequency, for example, a frequency of 3 MHz or less, the voltage phase difference is reduced, thereby suppressing the occurrence of discharge between the substrate and the substrate.

[0047] The electrostatic capacitance (composite capacitance) of the electrostatic chuck 3 is 10 to 21 pF / cm 2 The capacitance is about 10 pF / cm 2 If the capacitance is smaller than this, applying high-frequency power of 3 MHz or less to the substrate mounting table will easily cause discharge between the substrate and the substrate. Also, the upper limit of the capacitance currently available is 21 pF / cm. 2 is.

[0048] The thickness of the electrode layer 3a2 is about 5 μm. The thickness of the layer 3a1 is about 25 to 50 μm. The relative dielectric constant of the layer 3a1 is about 3.2. The thickness of the layer 3a3 is about 25 to 50 μm. The relative dielectric constant of the layer 3a3 is about 3.2.

[0049] The adhesive layer 3a4 has a thickness of about 10 to 20 μm. The adhesive layer 3a4 has a relative dielectric constant of about 3.0. The adhesive layer 3a5 has a thickness of about 10 to 20 μm. The adhesive layer 3a5 has a relative dielectric constant of about 3.0.

[0050] The thickness of the intermediate layer 3b is about 20 to 100 μm. The relative dielectric constant of the intermediate layer 3b is about 2.7. The thickness of the covering layer 3c (thickness TH3 shown in FIGS. 1 to 5) is about 65 μm.

[0051] The thickness of the base layer 3c1 is about 50 μm. The relative dielectric constant of the base layer 3c1 is about 7.1. The thickness of the protrusions 3c2 is about 15 μm. The relative dielectric constant of the protrusions 3c2 is about 7.1.

[0052] The surface roughness (arithmetic mean roughness: Ra) of the upper surface 31 of the base layer 3c1 is 0.05 to 0.5 μm. The surface roughness (arithmetic mean roughness: Ra) of the end surfaces 32 of the protrusions 3c2 is 0.05 to 0.5 μm.

[0053] The plurality of protrusions 3c2 are provided so as to contact, for example, approximately 20% of the substrate.

[0054] The length LT1 shown in Figures 2, 4, and 5 is approximately 1.2 to 2.2 mm. The length LT2 shown in Figures 2, 4, and 5 is approximately 0.7 to 1 mm. If the length LT2 is shorter than 0.7 mm, leakage current increases at the interface between the ceramic and layer 3a1, making discharge more likely to occur between the substrate support 2 and the substrate. On the other hand, the area of ​​the laminated portion 3a in contact with the base 4 is maximized to obtain sufficient chucking force. Therefore, if the length LT2 is longer than 1 mm, the diameter of the main body 4a becomes smaller and the diameter of the ceramic becomes larger, reducing the heat dissipation area of ​​the base 4 and causing localized increases in the temperature of the substrate, resulting in reduced temperature uniformity across the substrate.

[0055] The taper angle θ of the end region 3bb shown in FIG. 2 is, for example, 45° or less.

[0056] The layer 3a1 shown in each of Figures 2 to 6 is, for example, a resin layer. In this case, the material of the layer 3a1 and the material of the layer 3a3 may be, for example, polyimide resin, silicone resin, epoxy resin, or acrylic resin. The materials of the layer 3a1 and the layer 3a3 may be different from each other. The coating layer 3c is made of ceramics. The material of the side wall portion 4b1 and the material of the side wall portion 4b2 are ceramics.

[0057] The material of the base 3b1 of the intermediate layer 3b contains a resin or a silane-based agent, and the material of the particles 3b2 is ceramic.

[0058] An example of a method for forming the coating layer 3C will be described with reference to Fig. 6. The method for forming the coating layer 3C is not limited to the method shown in Fig. 6 as long as the convex portions 3c2 of the coating layer 3c can be suitably formed.

[0059] To carry out the method shown in Figure 6, a plasma spraying device is used to form a ceramic coating layer 3c by thermal spraying. First, a product PD1 is placed in the plasma spraying device. The product PD1 includes a base 4, a laminated portion 3a, and an intermediate layer 3b. The laminated portion 3a is provided on the base 4, and the intermediate layer 3b is provided on the laminated portion 3a. The laminated portion 3a includes a layer 3a1, an electrode layer 3a2, and a layer 3a3.

[0060] Next, ceramic spraying is performed on the intermediate layer 3b of the product PD1, forming a product PD2. For example, ceramic spraying involves spraying a powder of spray material having a particle diameter of 15 μm or less together with a plasma generating gas from the tip of a nozzle into a plasma generating section coaxial with the nozzle. Next, plasma is generated from the plasma generating gas using power of 50 kW or less in the plasma generating section, and the sprayed powder of spray material is liquefied by the plasma and sprayed to cover the surface of the intermediate layer 3b. Because the particle diameter of the powder of spray material is small, the amount of power required to melt the powder of spray material can be reduced, allowing the coating layer 3d to be formed without burning the intermediate layer 3b during spraying. In the product PD2, the coating layer 3d is formed on the intermediate layer 3b by ceramic spraying. The coating layer 3c shown in Figures 1 to 5 is formed by processing the coating layer 3d.

[0061] In the product PD2, the surface of the coating layer 3d is further polished, so that the surface roughness of the surface of the coating layer 3d becomes approximately the same as the surface roughness of the upper surface 31 of the base layer 3c1 shown in FIGS.

[0062] Next, a mask MK1 made of, for example, resin and having a plurality of openings is placed on the coating layer 3d of the product PD2, thereby forming a product PD3. The openings of the mask MK1 correspond to the positions where the convex portions 3c2 are to be provided in the coating layer 3c shown in FIGS.

[0063] Next, ceramic spraying is further performed on the product PD3 from above the mask MK1 and the coating layer 3d, forming a product PD4. The ceramic material used to form the product PD4 is the same as the ceramic material used to form the coating layer 3d. In the product PD4, ceramic is filled into the multiple openings of the mask MK1, and a ceramic mask MK2 is also formed on the mask MK1. In the product PD4, the locations where the ceramic is filled into the multiple openings of the mask MK1 correspond to the protrusions 3c2 shown in Figures 1 to 5.

[0064] Next, the masks MK1 and MK2 are removed from the product PD4 to form a product PD5. In the product PD5, the surface of the coating layer 3d has irregularities (the protrusions correspond to the protrusions 3c2 shown in FIGS. 1 to 5) formed by removing the masks MK1 and MK2.

[0065] Next, the end faces of the convex portions of the coating layer 3d of the product PD5 are polished to form a coating layer 3c from the coating layer 3d, thereby forming the substrate mounting table 2. This polishing makes the surface roughness of the end faces of the convex portions of the coating layer 3d of the product PD5 approximately the same as the surface roughness of the end faces 32 of the convex portions 3c2 shown in FIGS.

[0066] By forming base layer 3c1 and protrusions 3c2 as described above, the surface roughness of not only end faces 32 of protrusions 3c2 but also upper surface 31 of base layer 3c1 is reduced. Therefore, for example, when plasma cleaning is performed without placing a substrate, the surface is less likely to be fractured by plasma, and particles generated from the base layer are sufficiently reduced. Note that the method of forming protrusions 3c2 is not limited to the method using a mask. For example, protrusions 3c2 may be formed without using a mask after the surface of coating layer 3d of product PD2 is polished.

[0067] An example of a substrate processing apparatus according to an illustrative embodiment will be described with reference to FIG. 7. The substrate processing apparatus 1 is a parallel-plate type capacitively coupled plasma processing apparatus, and has a substantially cylindrical processing container PC (chamber). The inner surface of the processing container PC is sprayed with an yttrium oxide film or is subjected to an alumite treatment (anodization treatment). The inside of the processing container PC serves as a processing chamber where plasma processing such as etching and film formation is performed using plasma. The substrate processing apparatus 1 is provided with a substrate mounting table 2 shown in FIGS. 1 to 5.

[0068] A semiconductor wafer (hereinafter referred to as a "wafer W"), which is an example of a substrate, is placed on the substrate mounting table 2. The substrate mounting table 2 also functions as a lower electrode.

[0069] The DC power supply 30 is electrically connected to the electrode layer 3a2 via a contact pin 4d (see FIGS. 1 and 3). When a DC voltage is applied from the DC power supply 30 to the electrode layer 3a2 by opening and closing the switch 30a, the wafer W is attracted to the electrostatic chuck 3 by electrostatic force.

[0070] An annular focus ring 11 is mounted on the outer periphery of the electrostatic chuck 3 so as to surround the outer periphery of the wafer W. The focus ring 11 may be made of, for example, silicon. The focus ring 11 functions to focus plasma in the processing chamber PC toward the surface of the wafer W, thereby improving the efficiency of plasma processing.

[0071] A coolant flow path 12a is formed inside the base 4. A cooling medium (hereinafter also referred to as "coolant") such as cooling water or brine output from a chiller 36 flows and circulates through the coolant inlet pipe 12b, the coolant flow path 12a, and the coolant outlet pipe 12c. The circulating coolant removes heat from the metal substrate mounting table 2, thereby cooling it.

[0072] The heat transfer gas supply source 37 supplies a heat transfer gas such as He gas between the front surface of the electrostatic chuck 3 and the rear surface of the wafer W via the heat transfer gas supply line 16. With this configuration, the temperature of the electrostatic chuck 3 is controlled by the coolant circulated through the coolant flow path 12a and the heat transfer gas supplied to the rear surface of the wafer W. As a result, the wafer W is controlled to a predetermined temperature.

[0073] A first high frequency power supply 33, which supplies high frequency power HF of a first frequency for generating plasma, is connected to the substrate mounting table 2 via a first matcher 33a. A second high frequency power supply 34, which supplies high frequency power LF of a second frequency for generating a bias voltage, is connected to the substrate mounting table 2 via a second matcher 34a. The first frequency is, for example, 40 MHz, and the first high frequency power supply 33 can supply the high frequency power HF of the first frequency to the substrate mounting table 2. The second frequency is a high frequency of 3 MHz or less. In this embodiment, the high frequency power HF is applied to the substrate mounting table 2, but it may also be applied to the gas showerhead 20.

[0074] The first matching box 33a functions to make the internal impedance of the first high frequency power supply 33 and the load impedance appear to match when plasma is generated in the processing container PC. The second matching box 34a functions to make the internal impedance of the second high frequency power supply 34 and the load impedance appear to match when plasma is generated in the processing container PC.

[0075] The gas showerhead 20 is attached to close an opening in the ceiling of the processing container PC via a shield ring 21 that covers the outer periphery of the gas showerhead 20. A variable DC power supply 26 is connected to the gas showerhead 20, and a negative direct current (DC) voltage is output from the variable DC power supply 26. The gas showerhead 20 may be made of silicon. The gas showerhead 20 also functions as a counter electrode (upper electrode) that faces the substrate stage 2 (lower electrode).

[0076] The gas shower head 20 is formed with a gas inlet 22 for introducing gas. A center-side gas diffusion chamber 24a and an edge-side gas diffusion chamber 24b are provided inside the gas shower head 20, branching from the gas inlet 22. Gas output from a gas supply source 23 is supplied to the gas diffusion chamber 24a and the gas diffusion chamber 24b via the gas inlet 22, diffused in the gas diffusion chamber 24a and the gas diffusion chamber 24b, and introduced toward the substrate mounting table 2 through a plurality of gas supply holes 25.

[0077] An exhaust port 18 is formed in the bottom surface of the processing container PC, and the inside of the processing container PC is evacuated by an exhaust device 38 connected to the exhaust port 18. This allows the inside of the processing container PC to be maintained at a predetermined vacuum level. A gate valve 17 is provided on the sidewall of the processing container PC. The gate valve 17 opens and closes when a wafer W is loaded into or unloaded from the processing container PC.

[0078] The substrate processing apparatus 1 is provided with a control device 100 that controls the operation of the entire apparatus. The control device 100 has a CPU 105 (Central Processing Unit), a ROM 110 (Read Only Memory), and a RAM 115 (Random Access Memory). The CPU 105 performs a desired plasma process, such as etching, according to a recipe stored in a storage area such as the RAM 115. The recipe includes settings such as process time, pressure (gas exhaust), high-frequency power and voltage, various gas flow rates, temperatures inside the processing container PC (temperature of the upper electrode, temperature of the sidewall of the processing container PC, temperature of the wafer W, temperature of the electrostatic chuck 3, etc.), and temperature of the coolant from the chiller 36.

[0079] When a plasma process such as etching or film formation is performed, the opening and closing of the gate valve 17 is controlled, and the wafer W is loaded into the process container PC and placed on the substrate mounting table 2. When a DC voltage of positive or negative polarity is applied from the DC power supply 30 to the electrode layer 3a2, the wafer W is electrostatically attracted to and held by the electrostatic chuck 3.

[0080] During processing, a desired gas is supplied into the processing container PC from the gas supply source 23, and high frequency power HF is applied to the substrate mounting table 2 from the first high frequency power supply 33. High frequency power LF may be applied to the substrate mounting table 2 from the second high frequency power supply 34. A negative DC voltage may be applied to the gas showerhead 20 from the variable DC power supply 26. This causes the gas to dissociate above the wafer W, generating plasma, and the wafer W is subjected to plasma processing by the action of the plasma.

[0081] After the plasma processing, a DC voltage having a polarity opposite to that during electrostatic attraction is applied from the DC power supply 30 to the electrode layer 3a2, thereby removing the charge on the wafer W. After the charge is removed, the wafer W is peeled off from the electrostatic chuck 3 and transferred out of the processing container PC through the gate valve 17.

[0082] (Modifications) Figures 8 to 24 each show a modification of the substrate mounting table 2. Note that the materials of each component related to the modifications shown in Figures 8 to 24 may be the same as those described above unless otherwise specified below.

[0083] A modified example shown in FIG. 8 will be described. FIG. 8 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is provided on the insulating region 4e and has a tapered shape that narrows in a direction away from the laminated portion 3a. The resin region 3e contacts the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and contacts the layer 3a3, the resin region 3e, and the insulating region 4e. The layer 3a1 is a resin layer, and the material of the layer 3a1 is, for example, any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin (the same applies to the material of the layer 3a1 shown in each of FIGS. 9 to 11 and 14 to 16). The layer 3a3 is a resin layer, and the material of the layer 3a3 is, for example, any one of polyimide resin, silicone resin, epoxy resin, and acrylic resin (the same applies to the material of the layer 3a3 shown in each of FIGS. 9 to 24). The material of the main body 4a is, for example, SiC (the same applies to the material of the main body 4a shown in FIGS. 9 to 24).

[0084] In the configuration shown in FIG. 8, the diameter of electrode layer 3a2 is smaller than the diameters of layers 3a1 and 3a3, intermediate layer 3b covers the entire surface of laminated portion 3a provided on base 4, and intermediate layer 3b covers a portion of side wall portion 4b2 (the same applies to each of the configurations in FIGS. 9 to 24). Also, in the configuration shown in FIG. 8, covering layer 3c includes base layer 3c1 and a plurality of protrusions 3c2, base layer 3c1 is in close contact with intermediate layer 3b, and the plurality of protrusions 3c2 are provided on upper surface 31 of base layer 3c1 (the same applies to each of the configurations in FIGS. 9 to 24). Also, in the configuration shown in FIG. 8, the surface roughness of upper surface 31 of base layer 3c1 is 0.05 to 0.5 μm, and intermediate layer 3b includes base 3b1 and a plurality of granules 3b2 dispersed in base 3b1 (the same applies to each of the configurations in FIGS. 9 to 24). In the configuration shown in Fig. 8, the plurality of granules 3b2 include exposed portions that are exposed from the base 3b1, and these exposed portions contact the layer 3a3 and the coating layer 3c (the same applies to the configurations in Figs. 9 to 24). In the configuration shown in Fig. 8, the material of the base 3b1 contains a resin or a silane-based agent, and the material of the granules 3b2 is ceramic (the same applies to the configurations in Figs. 9 to 24).

[0085] A modified example shown in FIG. 9 will be described. FIG. 9 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an edge region and an insulating region 3f. The base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is disposed on the insulating region 4e between the insulating region 3f and the laminated portion 3a. The resin region 3e contacts the side surface SF2 of the laminated portion 3a, the insulating region 3f, and the insulating region 4e, and covers the side surface SF2. The insulating region 3f contacts the insulating region 4e. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, the insulating region 3f, and the insulating region 4e, and contacts the layer 3a3, the resin region 3e, the insulating region 3f, and the insulating region 4e. The material of the insulating region 3f is an insulating material such as aluminum oxide (the same applies to the materials of the insulating region 3f shown in each of FIGS. 11, 15, and 17).

[0086] A modified example shown in FIG. 10 will be described. FIG. 10 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the sidewall portion 4b1 in the region ER1 shown in FIG. 1. The resin region 3e is provided on the insulating region 4e, contacts the side surface SF2 of the stacked portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The insulating region 4e has a portion (convex portion 4e1) extending along the side surface SF2 of the electrostatic chuck 3. The resin region 3e is provided between the side surface SF2 of the stacked portion 3a and the convex portion 4e1 of the insulating region 4e. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e, and the insulating region 4e.

[0087] A modified example shown in FIG. 11 will be described. FIG. 11 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The substrate mounting table 2 has an insulating region 3f as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in the region ER1 shown in FIG. 1. The insulating region 3f is provided on the insulating region 4e, contacts the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the insulating region 3f, and the insulating region 4e, and contacts the layer 3a3, the insulating region 3f, and the insulating region 4e.

[0088] A modified example shown in FIG. 12 will be described. FIG. 12 shows a modified example of the configuration of the substrate support 2 in the region ER1 shown in FIG. 1. The substrate support 2 has a resin region 3e as an edge region, and the base 4 has a main body portion 4a. The laminated portion 3a shown in FIG. 12 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 12 does not have the adhesive layer 3a4 shown in FIG. 8 and other figures. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The resin region 3e is provided on the layer 3a1, contacts the side surface SF2 of the laminated portion 3a and the layer 3a1, covers the side surface SF2, and has a tapered shape that narrows in a direction away from the laminated portion 3a. Intermediate layer 3b covers layer 3a3, resin region 3e, and layer 3a1, and is in contact with layer 3a3, resin region 3e, and layer 3a1. Layer 3a1 is an insulating layer or a resin layer (the same applies to layer 3a1 shown in each of FIGS. 13, 17, and 24). When layer 3a1 is an insulating film, it is made of ceramic, and when layer 3a1 is a resin layer, it is made of polyimide resin, silicone resin, epoxy resin, or acrylic resin. The same applies to the material of layer 3a1 shown in each of FIGS. 13, 17, and 24.

[0089] A modified example shown in FIG. 13 will be described. FIG. 13 shows a modified example of the configuration of the substrate support 2 in the region ER1 shown in FIG. 1. The base 4 of the substrate support 2 shown in FIG. 13 has a conductive region 4f, and the configuration of the substrate support 2 shown in FIG. 13 differs from the configuration of the substrate support 2 shown in FIG. 12 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body 4a and in contact with the main body 4a. The layer 3a1 is provided on the conductive region 4f and in contact with the conductive region 4f. The material of the conductive region 4f is a conductive material such as aluminum or copper (the same applies to the materials of the conductive region 4f shown in FIG. 14 and FIGS. 21 to 24).

[0090] A modified example shown in FIG. 14 will be described. FIG. 14 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 shown in FIG. 1. The configuration of the substrate mounting table 2 shown in FIG. 14 has a conductive region 4f, and the configuration of the substrate mounting table 2 shown in FIG. 14 differs from the configuration of the substrate mounting table 2 shown in FIG. 8 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. The insulating region 4e is provided on the conductive region 4f and is in contact with the conductive region 4f. The insulating region 4e corresponds to the sidewall portion 4b1 in the region ER1 shown in FIG. 1.

[0091] The configuration shown in FIG. 14 in which the conductive region 4f is provided is the same as that shown in FIGS.

[0092] A modified example shown in FIG. 15 will be described. FIG. 15 shows a modified configuration of the substrate support 2 in the region ER1 facing the hole GT. The substrate support 2 has a resin region 3e and an insulating region 3f as edge regions, and a resin region 3g. The base 4 includes a main body 4a and a sidewall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body 4a and the sidewall 4b2. The inner diameters of the layers 3a1 and 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) are smaller than the inner diameter of the main body 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layers 3a1 and 3a3 extend on the base 4 so as to overlap the sidewall 4b2. The resin region 3g is provided between the main body 4a and the sidewall 4b2 and is in contact with the adhesive layer 3a4. Resin region 3g extends near laminated portion 3a, widening toward laminated portion 3a. Resin region 3e contacts side surface SF2 and side wall portion 4b2 of laminated portion 3a, covering side surface SF2. Insulating region 3f contacts side wall portion 4b2. Resin region 3e is disposed on side wall portion 4b2 between insulating region 3f and laminated portion 3a, and contacts insulating region 3f and laminated portion 3a. Intermediate layer 3b covers layer 3a3 and resin region 3e, and contacts layer 3a3 and resin region 3e.

[0093] A modified example shown in FIG. 16 will be described. FIG. 16 illustrates a modified configuration of the substrate support 2 in the region ER1 facing the hole GT. The substrate support 2 has a resin region 3e as an end region and a resin region 3g. The base 4 includes a main body 4a and a sidewall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body 4a and the sidewall 4b2. The inner diameters of the layers 3a1 and 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) are smaller than the inner diameter of the main body 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layers 3a1 and 3a3 extend on the base 4 so as to overlap with the sidewall 4b2. The resin region 3g is provided between the main body 4a and the sidewall 4b2 and is in contact with the adhesive layer 3a4. The resin region 3g extends toward the stack 3a in the vicinity of the stack 3a. The surface of the side wall 4b2 has a portion in contact with the laminated portion 3a and a portion extending along the side surface SF2 of the laminated portion 3a (part of the surface of the protruding portion 4b21 included in the side wall 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the corresponding portion of the surface of the side wall 4b2 (part of the surface of the protruding portion 4b21). The resin region 3e is in contact with the side surface SF2 and the side wall 4b2 (particularly the protruding portion 4b21) of the laminated portion 3a and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e and is in contact with the layer 3a3 and the resin region 3e.

[0094] A modified example shown in FIG. 17 will be described. FIG. 17 illustrates a modified configuration of the substrate support 2 in the region ER1 facing the hole GT. The substrate support 2 includes a resin region 3e and an insulating region 3f as edge regions, and a resin region 3g. The laminated portion 3a shown in FIG. 17 includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 17 does not include the adhesive layer 3a4 shown in FIG. 8 and other figures. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 includes the main body portion 4a and a sidewall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the sidewall portion 4b2. The inner diameter of the layer 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) is smaller than the inner diameter of the main body portion 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 extends on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the adhesive layer 3a5. The resin region 3g extends near the laminated portion 3a so as to widen toward the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 and the side wall portion 4b2 of the laminated portion 3a and covers the side surface SF2. The insulating region 3f is in contact with the side wall portion 4b2. The resin region 3e is disposed on the side wall portion 4b2 between the insulating region 3f and the laminated portion 3a and is in contact with the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e and is in contact with the layer 3a3 and the resin region 3e.

[0095] A modified example shown in FIG. 18 will be described. FIG. 18 illustrates a modified configuration of the substrate support 2 in the region ER1 facing the hole GT. The substrate support 2 has a resin region 3e and a resin region 3g as end regions. The laminated portion 3a shown in FIG. 18 includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 18 does not include the adhesive layer 3a4 shown in FIG. 8 and other figures. The layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 includes the main body portion 4a and a sidewall portion 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body portion 4a and the sidewall portion 4b2. The inner diameter of the layer 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) is smaller than the inner diameter of the main body portion 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 extends on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the adhesive layer 3a5. The resin region 3g extends toward the laminated portion 3a in the vicinity of the laminated portion 3a. The surface of the side wall portion 4b2 has a portion that is in contact with the laminated portion 3a and a portion that extends along the side surface SF2 of the laminated portion 3a (part of the surface of the protruding portion 4b21 included in the side wall portion 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the corresponding portion of the surface of the side wall portion 4b2 (part of the surface of the protruding portion 4b21). Resin region 3e contacts side surface SF2 and side wall 4b2 (particularly protrusion 4b21) of laminated portion 3a, covering side surface SF2. Intermediate layer 3b covers layer 3a3 and resin region 3e, and contacts layer 3a3 and resin region 3e.

[0096] A modified example shown in FIG. 19 will be described. FIG. 19 illustrates a modified configuration of the substrate support 2 in the region ER1 facing the hole GT. The substrate support 2 has a resin region 3g as an end region. The laminate 3a shown in FIG. 19 includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminate 3a shown in FIG. 19 does not include the adhesive layer 3a4 shown in FIG. 8 and other figures. The layer 3a1 is provided on the main body 4a and covers the surface of the main body 4a. The base 4 includes the main body 4a and a sidewall 4b2 provided on the side of the base 4. The electrostatic chuck 3 is disposed on the main body 4a and the sidewall 4b2. The inner diameter of the layer 3a3 (the diameter of the region including the hole GT and defined by the side surface SF2) is larger than the inner diameter of the main body 4a (the diameter of the region including the hole GT and defined by the side surface SF1). The layer 3a3 does not overlap the side wall 4b2 and extends only over the main body 4a. The resin region 3g is provided between the main body 4a and the side wall 4b2, and contacts the intermediate layer 3b and the side surface SF2 of the laminated portion 3a, covering the side surface SF2. The resin region 3g extends toward the intermediate layer 3b in the vicinity of the intermediate layer 3b. The intermediate layer 3b covers the layer 3a3, the resin region 3g, and the side wall 4b2, and contacts the layer 3a3, the resin region 3g, and the side wall 4b2.

[0097] A modified example shown in FIG. 20 will be described. FIG. 20 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3g as an end region. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and contacts the intermediate layer 3b. The distance between the main body portion 4a and the side wall portion 4b2 (the width of the resin region 3g) gradually increases toward the intermediate layer 3b. The configuration of the substrate mounting table 2 shown in FIG. 20 differs from the configuration of the substrate mounting table 2 shown in FIG. 19 in terms of the distance between the main body portion 4a and the side wall portion 4b2 (the width of the resin region 3g).

[0098] A modified example shown in FIG. 21 will be described. FIG. 21 shows a modified example of the configuration of the substrate support 2 in the region ER1 facing the hole GT. The configuration of the substrate support 2 shown in FIG. 21 includes a conductive region 4f, and the configuration of the substrate support 2 shown in FIG. 21 differs from the configuration of the substrate support 2 shown in FIG. 19 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and contacts the conductive region 4f.

[0099] A modified example shown in FIG. 22 will be described. FIG. 22 shows a modified example of the configuration of the substrate support 2 in the region ER1 facing the hole GT. The configuration of the substrate support 2 shown in FIG. 22 has a conductive region 4f, and the configuration of the substrate support 2 shown in FIG. 22 differs from the configuration of the substrate support 2 shown in FIG. 20 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and contacts the main body portion 4a. The layer 3a1 is provided on the conductive region 4f and contacts the main body portion 4a and the conductive region 4f.

[0100] The configurations shown in FIGS. 21 and 22 in which the conductive region 4f is provided are the same as those in FIGS.

[0101] A modified example shown in FIG. 23 will be described. FIG. 23 illustrates a modified configuration of the substrate support 2 in the region ER1. In the configuration of the substrate support 2 shown in FIG. 23, a recess 4a1 is provided on the surface of the main body 4a. A conductive region 4f, a laminated portion 3a, and a resin region 3e are provided within the recess 4a1. The laminated portion 3a shown in FIG. 23 includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 23 does not include the adhesive layer 3a4 shown in FIG. 8, etc. The layer 3a1 is provided on the conductive region 4f. The electrode layer 3a2, the adhesive layer 3a5, the layer 3a3, and the resin region 3e are provided on the layer 3a1. The resin region 3e contacts the layer 3a1 and a side surface SF2 of the laminated portion 3a and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the main body portion 4a, and is in contact with the layer 3a3, the resin region 3e, and the main body portion 4a.

[0102] A modified example shown in FIG. 24 will be described. FIG. 24 illustrates a modified configuration of the substrate support 2 in the region ER1. In the configuration of the substrate support 2 shown in FIG. 24, a conductive region 4f is provided on the main body portion 4a, and a laminated portion 3a is provided on the conductive region 4f. The laminated portion 3a shown in FIG. 24 includes a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in FIG. 24 does not include the adhesive layer 3a4 shown in FIG. 8 and the like. The layer 3a1 is provided on the conductive region 4f. The resin region 3e is provided on the main body portion 4a, contacts the main body portion 4a, the side surface SF2 of the laminated portion 3a, and the side surface of the conductive region 4f, covers the side surface SF2 and the side surface of the conductive region 4f, and has a tapered shape that narrows in a direction away from the laminated portion 3a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the main body portion 4a, and is in contact with the layer 3a3, the resin region 3e, and the main body portion 4a.

[0103] 8 to 24, the side surface SF2 of the electrostatic chuck 3 is covered with a resin region 3e made of a material with a relatively high viscosity and the resin region 3e is hardened, or the side surface SF2 of the electrostatic chuck 3 is covered with an insulating region 3f. Therefore, the occurrence of cracks and the like in the intermediate layer 3b and the covering layer 3c covering the resin region 3e or the insulating region 3f, whose shape is maintained, is suppressed, and the configuration of the side surface SF2 of the electrostatic chuck 3 (the resin region 3e or the insulating region 3f) as well as the intermediate layer 3b and the covering layer 3c can all be formed in a good shape.

[0104] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and modifications may be made. Furthermore, elements in different exemplary embodiments may be combined to form other exemplary embodiments.

[0105] From the foregoing, it will be understood that various exemplary embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various exemplary embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0106] 1...substrate processing apparatus, 100...controller, 105...CPU, 11...focus ring, 110...ROM, 115...RAM, 12a...coolant flow path, 12b...coolant inlet pipe, 12c...coolant outlet pipe, 16...heat transfer gas supply line, 17...gate valve, 18...exhaust port, 2...substrate mounting table, 20...gas shower head, 21...shield ring, 22...gas inlet port, 23...gas supply source, 24a...gas diffusion chamber, 24b...gas diffusion chamber, 25...gas supply hole, 26...variable DC power supply, 3...electrostatic chuck, 3e...resin region, 3f...insulating region, 3g...resin region, 30...DC power supply, 30a...switch, 31...upper surface, 32...end surface, 33...first high frequency power supply, 33a...first matching box, 34...second high frequency power supply, 34a...second matching box, 36...chiller, 37...heat transfer gas supply source, 38...exhaust device, 3a...stack portion, 3a1...layer, 3a2...electrode layer, 3a3...layer, 3a4...adhesive layer, 3a5...adhesive layer, 3b...intermediate layer, 3b1...substrate, 3b2...granular body, 3bb...end region, 3c...coating layer, 3c1...base layer, 3c2...convex part, 3d...coating Covering layer, 4...Base, 4a...Main part, 4a1...Concave part, 4b1...Side wall part, 4b2...Side wall part, 4b21...Convex part, 4c...Sleeve, 4d...Contact pin, 4e...Insulating area, 4e1...Convex part, 4f...Conductive area , AX...central axis, ER1...area, ER2...area, GT...hole, LT1...length, LT2...length, LT3...length, MK1...mask, MK2...mask, PC...processing container, PD1...product, PD2...product, PD3...product, PD4...product, PD5...product, SF1...side, SF2...side, SF3...top, TH1...thickness, TH2...thickness, TH3...thickness, TH4...thickness, W...wafer, θ...taper angle.

Claims

1. The base and an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a stack placed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer placed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and Including, the first insulating layer includes a ceramic material or a resin material; the resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the second insulating layer includes a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the first covering layer has an annular portion surrounding the side surface of the laminate, the annular portion having a lower surface in contact with the base; the annular portion has a first inclined surface on the lower surface; Board support.

2. The substrate support according to claim 1 , wherein the second cover layer has a second inclined surface that is aligned with the first inclined surface.

3. The substrate support according to claim 1 , wherein the first inclined surface is inclined at an angle of 45 degrees or less with respect to the lower surface.

4. A base; an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a stack placed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer placed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and Including, the first insulating layer includes a ceramic material or a resin material; the resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the second insulating layer includes a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the first covering layer has an annular portion surrounding the side surface of the laminate, the annular portion having a lower surface in contact with the base; the annular portion has a first curved surface on the lower surface; Board support.

5. The substrate support according to claim 4 , wherein the second cover layer has a second curved surface that follows the first curved surface.

6. 6. The substrate support according to claim 1, wherein the laminate comprises a first adhesive layer provided between the first insulating layer and the base.

7. The substrate support according to claim 6 , wherein the laminate comprises a second adhesive layer provided between the second insulating layer and the first cover layer.

8. A base; an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a stack placed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer placed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and Including, the first insulating layer includes a ceramic material or a resin material; the resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the second insulating layer includes a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; The laminated body has a second adhesive layer provided between the second insulating layer and the first covering layer. Board support.

9. A base; an electrostatic chuck disposed on the base; Equipped with The electrostatic chuck comprises: a stack placed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer placed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and Including, the first insulating layer includes a ceramic material or a resin material; the resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the second insulating layer includes a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the first coating layer includes a substrate and a particulate material dispersed in the substrate; At least a portion of the particulate material is in contact with the second insulating layer and the top surface of the laminate. Board support.

10. the substrate comprises a resin or a silane-based agent; The substrate support of claim 9 , wherein the particulate material comprises a ceramic material.

11. a plasma processing chamber; a substrate support disposed within the plasma processing chamber, the substrate support including a base and an electrostatic chuck disposed on the base; an RF power source electrically connected to the substrate support; Equipped with The electrostatic chuck comprises: a stack placed on the base, the stack having a top surface and a side surface, the stack including a first insulating layer, a second insulating layer, and an electrode layer placed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer; a first covering layer covering the top surface and the side surface of the laminate; a second coating layer covering the first coating layer and including a ceramic material; and Including, the first insulating layer includes a ceramic material or a resin material; the resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the second insulating layer includes a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin; the first covering layer has an annular portion surrounding the side surface of the laminate, the annular portion having a lower surface in contact with the base; the annular portion has a first inclined surface on the lower surface; Plasma processing equipment.

12. The plasma processing apparatus of claim 11 , wherein the RF power source is configured to generate RF power having a frequency of 3 MHz or less.

13. The plasma processing apparatus of claim 11 , wherein the RF power source is electrically connected to the base.

Images