Method for conditioning polishing tools, method for processing substrates, and processing apparatus for processing substrates

Abstract

To provide a conditioning method of a polishing tool which enables reduction of time for conditioning of the polishing tool, and to provide a substrate processing method and a substrate processing device.SOLUTION: A conditioning method of a polishing tool 89 includes: a substrate rotation step in which a silicon dummy substrate DW having a major surface in a non-mirror state is held in a horizontal attitude and rotated around a vertical axis AX5; and a conditioning performing step in which the polishing tool 89 having a resin body in which abrasive grains are dispersed is placed in contact with the major surface of the rotating dummy substrate DW to perform conditioning of the polishing tool 89.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a conditioning method, a substrate processing method, and a substrate processing apparatus for polishing the back surface of a substrate. The substrate includes, for example, a semiconductor substrate, a substrate for an FPD (Flat Panel Display), a glass substrate for a photomask, a substrate for an optical disk, a substrate for a magnetic disk, a ceramic substrate, a substrate for a solar cell, and the like. Examples of the FPD include a liquid crystal display device, an organic EL (electroluminescence) display device, and the like.

Background Art

[0002] Conventionally, in the exposure process of lithography, there is a problem of defocus where the focus is not achieved. The problem of defocus is caused by dust adhering to the back surface of the substrate. To remove the dust, brush treatment is performed. However, for example, if the dust is embedded in the back surface of the substrate, the conventional PVA (polyvinyl alcohol) sponge brush cannot remove the dust. Therefore, an abrasive brush (abrasive tool) containing abrasive grains is used to remove the dust (see, for example, Patent Document 1).

[0003] Patent Document 2 discloses a polishing apparatus provided with a polishing table. When a new polishing pad is attached to the polishing table, the polishing table rotates and a dummy wafer is pressed against the polishing pad of the polishing table to perform the startup operation of the polishing pad.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the case of conventional PVA brushes, a process is performed after brush replacement to remove initial contamination and improve the cleanliness of the brush. The time required for this process was not a major issue.

[0006] In contrast, with polishing brushes, a silicon dummy wafer is used to condition the brush surface. Conditioning involves bringing the polishing brush into contact with the dummy wafer to remove excessive protrusions from the abrasive particles contained in the brush, with the aim of suppressing the occurrence of scratches during wafer processing. This conditioning can take, for example, 4 to 6 hours. Therefore, after replacing the polishing brush, the equipment (or processing unit) becomes unusable until it is possible to process production wafers, resulting in a decrease in production efficiency.

[0007] The present invention has been made in view of these circumstances, and aims to provide a method for conditioning polishing tools, a method for processing substrates, and a processing apparatus for substrates that can shorten the time required for conditioning polishing tools. [Means for solving the problem]

[0008] To achieve this objective, the present invention has the following configuration. That is, the polishing tool conditioning method according to the present invention is The whole The invention is characterized by comprising: a substrate rotation step of holding a silicon dummy substrate having a non-mirror-finish main surface in a horizontal position and rotating the dummy substrate around a vertical axis; and a conditioning step of bringing a polishing tool having a resin body in which abrasive grains are dispersed into contact with the main surface of the rotating dummy substrate to perform conditioning of the polishing tool.

[0009] According to the polishing tool conditioning method of the present invention, in order to condition a polishing tool having a resin body in which abrasive particles are dispersed, The wholeA silicon dummy substrate with a non-mirror-finish main surface is used. Since the non-mirror-finish main surface is rougher than a mirror-finish surface, the conditioning time can be reduced compared to a silicon dummy substrate with a mirror-finish main surface. This reduces the time from changing the polishing tool until the production substrate can be processed. Furthermore, in the above-described method for conditioning the polishing tool, it is preferable that the cleaning solution is discharged onto the main surface of the dummy substrate while the conditioning process is being performed.

[0010] Furthermore, the polishing tool conditioning method according to the present invention comprises a substrate rotation step of holding a silicon dummy substrate having a non-mirror surface in a horizontal position and rotating the dummy substrate around a vertical axis, and a conditioning execution step of bringing a polishing tool having a resin body in which abrasive grains are dispersed into contact with the main surface of the rotating dummy substrate, thereby performing the conditioning of the polishing tool. The non-mirror-finish main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution. It is characterized by the following: According to the polishing tool conditioning method of the present invention, a silicon dummy substrate having a non-mirror-finish main surface is used to condition a polishing tool having a resin body in which abrasive grains are dispersed. Since the non-mirror-finish main surface is rougher than a mirror surface, the conditioning time can be shortened compared to a silicon dummy substrate having a mirror-finish main surface. This shortens the time from when the polishing tool is replaced until the production substrate can be processed. Also, It can be used by processing inexpensive dummy circuit boards that are readily available in semiconductor and other factories, without the need for special tools.

[0011] Furthermore, in the above-described method for conditioning the polishing tool, the chemical solution is preferably ammonia water. By treating with ammonia water, a non-mirror-finish main surface of the dummy substrate can be formed.

[0012] Furthermore, in the above-described method for conditioning the polishing tool, it is preferable that the conditioning step is performed by moving the polishing tool between the center of the dummy substrate and the periphery of the dummy substrate while bringing the polishing tool into contact with the main surface of the rotating dummy substrate. The polishing tool can be conditioned by moving the polishing tool between the center of the dummy substrate and the periphery of the dummy substrate.

[0013] Furthermore, the substrate processing method according to the present invention is The above-mentioned method for conditioning polishing tools, The present invention is characterized by comprising a polishing step of polishing the back surface of a production substrate using the polishing tool that has undergone the aforementioned conditioning.

[0014] According to the substrate processing method of the present invention, a silicon dummy substrate having a non-mirror-finish main surface is used to condition a polishing tool having a resin body in which abrasive grains are dispersed. Since the non-mirror-finish main surface is rougher than a mirror surface, the conditioning time can be shortened compared to a silicon dummy substrate having a mirror-finish main surface. This shortens the time from when the polishing tool is replaced until the production substrate can be processed. Furthermore, the back surface of the production substrate can be polished while suppressing scratches using the conditioned polishing tool.

[0015] Furthermore, the substrate processing apparatus according to the present invention is The whole The device comprises a holding and rotating unit that holds a silicon dummy substrate having a non-mirror-finish main surface in a horizontal position and rotates the dummy substrate around a vertical axis, a polishing tool having a resin body in which abrasive grains are dispersed, a polishing tool moving mechanism that moves the polishing tool, and a control unit that controls the processing of the substrate, wherein the control unit performs conditioning of the polishing tool by bringing the polishing tool into contact with the main surface of the dummy substrate being rotated by the holding and rotating unit by the polishing tool moving mechanism.

[0016] According to the substrate processing apparatus of the present invention, in order to condition a polishing tool having a resin body in which abrasive particles are dispersed, The whole A silicon dummy substrate with a non-mirror-finish main surface is used. Since the non-mirror-finish main surface is rougher than a mirror-finish surface, the conditioning time can be reduced compared to a silicon dummy substrate with a mirror-finish main surface. This reduces the time from changing the polishing tool until the production substrate can be processed. Furthermore, in the substrate processing apparatus described above, it is preferable that the apparatus includes a cleaning liquid nozzle for discharging cleaning liquid onto the dummy substrate and a cleaning liquid supply unit for supplying the cleaning liquid to the cleaning liquid nozzle, and that the control unit controls the cleaning liquid supply unit when the polishing tool is being conditioned, thereby causing the cleaning liquid to be discharged from the cleaning nozzle onto the main surface of the dummy substrate.

[0017] Furthermore, in the substrate processing apparatus described above, it is preferable that the non-mirror surface is rougher than the mirror surface. The conditioning of the polishing tool can be performed using a dummy substrate having a main surface that is in a non-mirror state, which is rougher than the mirror surface.

[0018] In the above-described substrate processing apparatus, it is preferable that the non-mirror surface state is rougher than the back surface of the dummy substrate. Furthermore, the back surface is rougher than the mirror surface. Conditioning of the abrasive can be performed using a dummy substrate having a main surface in a non-mirror surface state that is rougher than the back surface of the dummy substrate.

[0019] The above-described substrate processing apparatus further includes a dummy substrate storage unit that stores the dummy substrate and a transfer robot that transfers the dummy substrate. When the control unit performs conditioning of the abrasive, to, before the dummy substrate is transferred from the recorded dummy substrate storage unit to the holding and rotating unit. The aforementioned transport robot Transfer Let After conditioning of the abrasive, to, before the dummy substrate is transferred from the recorded holding and rotating unit to the dummy substrate storage unit. The aforementioned transport robot Transfer Let This is preferable.

[0020] When conditioning the abrasive, the dummy substrate can be taken out from the dummy substrate storage unit, and after conditioning, the dummy substrate can be returned to the dummy substrate storage unit.

[0021] The above-described substrate processing apparatus further includes a carrier that stores the production substrate. After the control unit performs conditioning of the abrasive, it is preferable that the production substrate is transferred from the carrier to the holding and rotating unit by the transfer robot, and the back surface of the production substrate held by the holding and rotating unit is polished using the abrasive. Using the conditioned abrasive, the back surface of the production substrate can be polished while suppressing scratches. Also, the tool that can shorten the time required for conditioning is the dummy substrate. Therefore, the transfer robot can handle the dummy substrate in the same manner as the production substrate.

Advantages of the Invention

[0022] According to the polishing tool conditioning method, substrate processing method, and substrate processing apparatus of the present invention, the time required for conditioning the polishing tool can be shortened. [Brief explanation of the drawing]

[0023] [Figure 1] This figure shows a schematic configuration of a dummy substrate processing apparatus according to an embodiment. [Figure 2] This is a flowchart illustrating the operation of a dummy substrate processing device. [Figure 3] This is a side view illustrating the chemical treatment of a dummy substrate. [Figure 4] (a) shows the measurement results of surface roughness (arithmetic mean roughness Ra and maximum height Ry) after treatment with ammonia water (chemical solution). (b) shows the measurement locations for (a). [Figure 5] This figure shows the schematic configuration of a production substrate processing apparatus according to an embodiment. [Figure 6] This is a side view showing the configuration of the processing unit. [Figure 7] This is a plan view showing the configuration of the processing unit. [Figure 8] This is a flowchart illustrating the operation of a production substrate processing device. [Figure 9] (a) and (b) are diagrams illustrating the shapes of abrasive grains contained in the resin body of the polishing tool. [Figure 10] This is a side view illustrating the conditioning of polishing tools. [Figure 11] This graph compares a dummy substrate with a normal mirror-finish main surface and a dummy substrate with a non-mirror-finish main surface. [Examples]

[0024] The embodiments of the present invention will be described below with reference to the drawings. Figure 1 is a diagram showing the schematic configuration of a dummy substrate processing apparatus 1 according to an embodiment.

[0025] (1) Configuration of the dummy substrate processing device Refer to Figure 1. First, we will describe the dummy substrate processing apparatus 1 for creating a dummy substrate (dummy wafer) DW for conditioning the polishing tool 89, which will be described later. The dummy substrate processing apparatus 1 processes, for example, a disc-shaped dummy substrate DW. The dummy substrate processing apparatus 1 comprises a holding and rotating unit 3, a chemical solution supply unit 5, a cleaning solution supply unit 7, a rinsing solution supply unit 9, and a brush mechanism 11.

[0026] The holding and rotating unit 3 holds the dummy substrate DW and rotates the dummy substrate DW around the vertical axis AX1. The holding and rotating unit 3 includes a spin chuck 3A and a rotation drive unit 3B. The spin chuck 3A is a vacuum chuck that holds the dummy substrate DW by vacuum adsorption to the back surface of the dummy substrate DW. Note that the spin chuck 3A may be a mechanical chuck (see Figure 6) or an electrostatic chuck. The rotation drive unit 3B rotates the dummy substrate DW held by the spin chuck 3A around the vertical axis AX1. The rotation drive unit 3B includes an electric motor.

[0027] The chemical supply unit 5 comprises a chemical nozzle 13, chemical piping 15, a chemical supply source 17, and an on-off valve V1. The chemical nozzle 13 discharges the chemical onto the main surface (surface) of the dummy substrate DW held by the holding and rotating unit 3. The chemical is, for example, ammonia water. Ammonia water (ammonia content: 2-3%) is a solution obtained by diluting ammonia (NH3) with pure water. However, the chemical is not limited to ammonia water. The chemical piping 15 connects the chemical nozzle 13 and the chemical supply source 17. The chemical supply source 17 supplies the chemical to the chemical nozzle 13 through the chemical piping 15. The on-off valve V1 is provided on the chemical piping 15.

[0028] The cleaning fluid supply unit 7 comprises a cleaning fluid nozzle 19, cleaning fluid piping 21, a cleaning fluid supply source 23, and an on-off valve V2. The cleaning fluid nozzle 19 discharges cleaning fluid onto the main surface of the dummy substrate DW held by the holding and rotating unit 3. For example, SC1 is used as the cleaning fluid. SC1 is a mixture of ammonia, hydrogen peroxide (H2O2), and water. The cleaning fluid piping 21 connects the cleaning fluid nozzle 19 and the cleaning fluid supply source 23. The on-off valve V2 is provided on the cleaning fluid piping 21.

[0029] The rinse liquid supply unit 9 comprises a rinse liquid nozzle 25, a rinse liquid piping 27, a rinse liquid supply source 29, and an on-off valve V3. The rinse liquid nozzle 25 discharges rinse liquid onto the main surface of the dummy substrate DW held by the holding and rotating unit 3. Pure water, such as deionized water (DIW), is used as the rinse liquid. The rinse liquid piping 27 connects the rinse liquid nozzle 25 and the rinse liquid supply source 29. The on-off valve V3 is provided on the rinse liquid piping 27.

[0030] Three on-off valves V1, V2, V3 and two on-off valves V5, V6 (described later) each supply and stop the supply of liquid. The chemical nozzle 13 is fixed to a position outside the dummy substrate DW. Two nozzles 19 and 25 are moved horizontally (XY direction) and vertically (Z direction) by a nozzle moving unit (having an electric motor) not shown. The chemical nozzle 13 may also be moved by the nozzle moving unit, similar to the two nozzles 19 and 25. The two nozzles 19 and 25 may also each be fixed to a position outside the dummy substrate DW.

[0031] The brush mechanism 11 comprises a brush 31, an arm 33, and a brush moving unit 35. The brush 31 is, for example, a sponge brush made of PVA (polyvinyl alcohol). The brush 31 is formed in a cylindrical shape. The arm 33 supports the brush 31. The brush moving unit 35 rotates the brush 31 via the arm 33 around a vertical axis AX2 on the outside of the dummy substrate DW held by the holding and rotating unit 3. The brush moving unit 35 moves the brush 31 in the vertical direction. The brush moving unit 35 also rotates the brush 31 around a vertical axis AX3 passing through the center line of the brush 31. The brush moving unit 35 is equipped with, for example, three electric motors. The brush mechanism 11 may be configured similarly to the back surface polishing mechanism 67 described later, except for the polishing tool 89.

[0032] The dummy board processing device 1 comprises a control unit 37 and a storage unit (not shown). The control unit 37 controls the processing of the dummy board DW. The control unit 37 comprises one or more processors, such as a central processing unit (CPU). The storage unit comprises at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and a hard disk. The storage unit stores computer programs necessary for the control unit 37 to control each component of the dummy board processing device 1.

[0033] (2) Operation of the dummy circuit board processing device Next, the operation of the dummy substrate processing apparatus 1 will be explained with reference to the flowchart in Figure 2. Figure 2 is a flowchart illustrating the operation of the dummy substrate processing apparatus 1. Figure 3 is a side view illustrating the chemical treatment of the dummy substrate DW.

[0034] [Step S01] Cleaning The dummy substrate DW is transported onto the spin chuck 3A of the holding and rotating unit 3. The spin chuck 3A holds the back surface of the dummy substrate DW by vacuum suction. At this time, the main surface of the dummy substrate DW is facing upwards, and the back surface of the dummy substrate DW is facing downwards. The dummy substrate DW is a bare silicon substrate. The main surface of the dummy substrate DW is in a mirror-like state. That is, the main surface has not undergone epitaxial growth and remains in the state in which it was polished to a mirror finish by a polishing device during the manufacturing process of the dummy substrate DW. However, the main surface of the dummy substrate DW may undergo epitaxial growth.

[0035] The rotation drive unit 3B of the holding and rotating unit 3 rotates the dummy substrate DW, held by the spin chuck 3A, around the vertical axis AX1. The cleaning liquid nozzle 19 is moved above the center of the dummy substrate DW by a nozzle moving unit (not shown). Then, by opening the on-off valve V2, the cleaning liquid nozzle 19 discharges SC1 as cleaning liquid onto the dummy substrate DW held by the spin chuck 3A. The SC1 discharged onto the dummy substrate DW spreads out on the main surface of the dummy substrate DW due to rotation. This cleans the main surface of the dummy substrate DW. Any excess SC1 is scattered from the main surface of the dummy substrate DW due to the rotation of the dummy substrate DW. Then, by closing the on-off valve V2, the cleaning liquid nozzle 19 stops discharging SC1. Note that SC1 contains ammonia, but no reaction occurs that would roughen the main surface of the dummy substrate DW.

[0036] [Step S02] Chemical treatment (surface roughening treatment) Subsequently, by opening the on / off valve V1, the chemical nozzle 13 discharges room temperature (23°C) ammonia water as a chemical near the center of the dummy substrate DW, which is held and rotated by the holding and rotating part 3. As a result, SC1 on the main surface of the dummy substrate DW is spread out by the rotation of the dummy substrate DW and replaced with ammonia water. In addition, excess ammonia water is scattered from the main surface of the dummy substrate DW by the rotation of the dummy substrate DW. The ammonia water performs surface roughening (etching) on ​​the main surface of the dummy substrate DW. Discharge of ammonia water onto the main surface of the dummy substrate DW is carried out for, for example, about 5 hours. After about 1 hour, the main surface, which was in a mirror-like state, begins to become cloudy. That is, the main surface begins to become cloudy.

[0037] When ammonia water is being discharged onto the main surface of the dummy substrate DW, the brush 31 scans the main surface. This will be explained in detail. As shown in Figure 3, the brush moving part 35 of the brush mechanism 11 moves the brush 31 from the standby position P1 to a position P2 above the center of the dummy substrate DW. The brush moving part 35 also rotates the brush 31 around the vertical axis AX3.

[0038] Subsequently, the brush moving unit 35 lowers the brush 31 from the upper position P2 to the center position P3, bringing the lower surface of the brush 31 into contact with the main surface of the dummy substrate DW. Then, with the brush 31 in contact with the dummy substrate DW, the brush moving unit 35 moves from the center position P3 to the peripheral position P4 of the dummy substrate DW. Then, the brush moving unit 35 raises the brush 31 from position P4 to the upper position P5, separating the brush 31 from the dummy substrate DW.

[0039] While ammonia water is supplied onto the main surface of the dummy substrate DW, the brush moving unit 35 repeatedly moves the brush 31 in the order of upper position P2, center position P3, peripheral position P4, and peripheral raised position P5. Scanning the brush 31 allows the ammonia water to spread more evenly across the entire main surface of the dummy substrate DW. If necessary, the brush 31 may be brought into contact with the ammonia water, and the brush 31 may be scanned with its lower surface slightly lifted from the main surface of the dummy substrate DW. Alternatively, scanning the brush 31 may be omitted.

[0040] After discharging ammonia water for a predetermined time (for example, 5 hours), the on / off valve V1 is closed, stopping the discharge of ammonia water by the chemical nozzle 13. At the same time, the brush moving unit 35 returns the brush 31 to the standby position P1. The rotation of the dummy substrate DW continues.

[0041] [Step S03] Rinse and dry The rinse liquid nozzle 25 is moved to a position above the center of the dummy substrate DW by a nozzle moving part (not shown). The rinse liquid nozzle 25 is moved so as not to interfere with the brush 31, etc. After stopping the discharge of ammonia water, the on / off valve V3 is opened, causing the rinse liquid nozzle 25 to discharge pure water (e.g., DIW) onto the main surface of the rotating dummy substrate DW. As a result, the pure water is spread on the main surface of the dummy substrate DW by the rotation. Therefore, the ammonia water on the dummy substrate DW is replaced with pure water. Excess pure water is scattered from the dummy substrate DW by the rotation.

[0042] Subsequently, by closing the on / off valve V3, the rinse liquid nozzle 25 stops discharging pure water. Then, the rotation drive unit 3B of the holding and rotating unit 3 rotates the dummy substrate DW at high speed, shaking off the pure water adhering to the dummy substrate DW. This performs spin drying. After that, the rotation drive unit 3B stops the rotation of the dummy substrate DW. Then, the spin chuck 3A releases its hold on the dummy substrate DW.

[0043] As described above, a dummy substrate DW for conditioning the polishing tool 89 is created. The non-mirror surface of the dummy substrate DW is formed by treating the main surface of the dummy substrate DW with a chemical solution. That is, the main surface of the dummy substrate DW is roughened from its normal mirror state to a non-mirror state using a chemical solution (ammonia water). This makes it possible to process and use inexpensive dummy substrate DW that is readily available in semiconductor factories, etc., without using special tools. For example, when the surface is mirror-finished, the letters reflected on the main surface can be read, but when the surface is non-mirror-finished, the main surface becomes like frosted glass, making the letters reflected on the main surface unreadable.

[0044] Figure 4(a) shows the measurement results of surface roughness (arithmetic mean roughness Ra and maximum height Ry) after treatment with ammonia water (chemical solution). Figure 4(b) shows the measurement positions PS1 to PS9 in Figure 4(a). Note that the maximum height Ry is the width (difference) between the maximum and minimum values ​​of surface irregularities. In Figure 4(a), the average value of the surface roughness (arithmetic mean roughness) Ra of the main surface of the dummy substrate DW is 0.639 μm (micrometers).

[0045] In response to this, we attempted to measure the surface roughness Ra of the main surface of the dummy substrate DW before the ammonia water treatment, but due to the limitations of the measurement accuracy (resolution) of the measuring device, we were unable to do so. Therefore, the surface roughness Ra after the ammonia water (chemical solution) treatment will be compared based on information from the internet. According to Information 1 (see URL below), the surface roughness Ra of a silicon wafer is 0.140 nm (nanometers). According to Information 2 (see URL below), the surface roughness Ra of a silicon wafer after CMP (Chemical Mechanical Polishing) processing is 0.22 nm (nanometers). Therefore, it can be seen that the main surface of the dummy substrate DW treated with ammonia water (surface roughening treatment) is rougher than the surface of a normal mirror-finished silicon substrate after CMP processing. (i) URL of Information 1 (https: / / www.ube.co.jp / usal / documents / s264_121.htm) (ii) URL of Information 2 (https: / / www.ipros.jp / news / detail / 49335 / )

[0046] As shown in Figure 4(a), the average surface roughness Ra of the back surface of the dummy substrate DW is 0.032 μm (micrometers). Therefore, the main surface after ammonia water treatment is rougher than the back surface that has not been treated with ammonia water. In other words, the non-mirror surface of the main surface of the dummy substrate DW is rougher than the back surface of the dummy substrate DW. The back surface is the surface opposite the main surface.

[0047] (3) Configuration of production substrate processing equipment Next, with reference to Figure 5, the production substrate processing apparatus 41 will be described. The production substrate processing apparatus 41 performs conditioning of the polishing tool 89 using a dummy substrate DW in a non-mirror state, and then polishes the back surface of the production substrate (production wafer) W using the conditioned polishing tool 89. The production substrate processing apparatus 41 comprises an indexer block 43 and a processing block 45. The production substrate processing apparatus 41 corresponds to the substrate processing apparatus of the present invention.

[0048] (3-1) Configuration of the indexer block The indexer block 43 comprises two carrier mounting shelves 47 and an indexer robot IR. Each carrier mounting shelf 47 is a shelf for mounting carriers C that contain substrates W.

[0049] Carrier C houses multiple substrates W (for example, 25) in a horizontal position with predetermined spacing between them in the vertical direction Z. Carrier C is typically a Front Open Unified Pod (FOUP), but other containers, such as a Standard Mechanical Interface (SMIF) pod, may also be used. Furthermore, the substrates W are distinguished into the dummy substrate DW described above and the production substrate PW on which electronic circuits are formed. When the dummy substrate DW and the production substrate PW are not distinguished, they are simply referred to as substrate W.

[0050] The indexer robot IR moves the substrate W between the carrier C, which is placed on the carrier mounting shelf 47, and the inversion unit 53. The indexer robot IR includes a hand HD that holds the substrate W, a multi-joint arm 49 that moves the hand HD, and a lifting platform 51 that raises and lowers the hand HD.

[0051] The hand HD is movable to transport the substrate W. The hand HD is attached to the tip of a multi-joint arm 49. The multi-joint arm 49 is configured, for example, as a SCARA type. The multi-joint arm 49 moves the hand HD horizontally (XY direction). The multi-joint arm 49 also changes the orientation of the hand HD by rotating it around a vertical axis. A lifting platform 51 supports the base end of the multi-joint arm 49. The lifting platform 51 raises and lowers the hand HD vertically (Z direction) via the multi-joint arm 49. The multi-joint arm 49 and the lifting platform 51 are equipped with one or more electric motors as drive sources. Although the hand HD is moved by the multi-joint arm 49, the hand HD may be configured to be able to move forward and backward, as well as rotate around a vertical axis.

[0052] (3-2) Configuration of the processing block The processing block 45 comprises a center robot CR, an inversion unit 53, and two processing units 55A and 55B. The center robot CR is positioned in a transport area 57 extending in the X direction from the indexer robot IR. The inversion unit 53 inverts the front and back sides of the substrate W. The inversion unit 53 comprises a pair of chucks 53A and 53B positioned along the Y direction. The inversion unit 53 holds the substrate W by gripping its periphery in the Y direction with the chucks 53A and 53B, and then rotates the chucks 53A and 53B holding the substrate W around an axis extending in the Y direction. The inversion unit 53 is positioned between the indexer robot IR and the center robot CR.

[0053] The central robot CR transports the substrate W between the inversion unit 53 and the two processing units 55A and 55B. The central robot CR is configured similarly to the indexer robot IR.

[0054] (3-2-1) Processing Unit Configuration Figure 6 is a side view showing the schematic configuration of the first processing unit 55A. Figure 7 is a top view thereof. Note that the second processing unit 55B shown in Figure 5 may be configured similarly to the first processing unit 55A. Alternatively, the second processing unit 55B may be configured differently from the first processing unit 55A.

[0055] The first processing unit 55A conditions the polishing tool 89 and polishes the back surface of the production substrate PW. The first processing unit 55A includes a holding and rotating unit 61, a cleaning fluid supply unit 63, a rinsing fluid supply unit 65, and a back surface polishing mechanism 67. The holding and rotating unit 61 holds the substrate W and rotates the substrate W around the vertical axis AX5.

[0056] The holding and rotating unit 61 comprises a spin chuck (mechanical chuck) 69 and a rotation drive unit 71. The rotation drive unit 71 is equipped with an electric motor. The rotation drive unit 71 rotates the spin chuck 69, thereby rotating the substrate W held by the spin chuck 69 around the vertical axis AX5.

[0057] The spin chuck 69 comprises a spin base 73 and three or more (e.g., six) retaining pins 75. The spin base 73 is formed in a disc shape. The vertical axis AX5 passes through the center of the spin base 69 (i.e., the substrate W). As shown in Figure 7, the six retaining pins 75 are erected in a ring shape at equal intervals around the vertical axis AX5. In addition, for example, three of the six retaining pins 75A each rotate around the vertical axis through which they pass. As a result, the spin chuck 69 holds the substrate W by horizontally clamping the periphery of the substrate W with the six retaining pins 75. The spin chuck 69 may be the spin chuck 3A (vacuum chuck) shown in Figure 1 or an electrostatic chuck.

[0058] The cleaning fluid supply unit 63 comprises a cleaning fluid nozzle 77, cleaning fluid piping 79, a cleaning fluid supply source 81, and an on-off valve V5. The cleaning fluid nozzle 77 discharges cleaning fluid onto the substrate W held by the holding and rotating unit 61. The cleaning fluid used is, for example, SC1 or pure water (for example, DIW). The cleaning fluid piping 79 connects the cleaning fluid nozzle 77 to the cleaning fluid supply source 81. The cleaning fluid supply source 81 supplies cleaning fluid to the cleaning fluid nozzle 77. The on-off valve V5 is provided in the cleaning fluid piping 79.

[0059] The rinse liquid supply unit 65 includes a rinse liquid nozzle 83, a rinse liquid piping 85, a rinse liquid supply source 87, and an on-off valve V6. The rinse liquid nozzle 83 discharges rinse liquid onto the substrate DW held by the holding and rotating unit 61. For example, pure water (e.g., DIW) is used as the rinse liquid. The rinse liquid piping 85 connects the rinse liquid nozzle 83 and the rinse liquid supply source 87. The rinse liquid supply source 87 supplies rinse liquid to the rinse liquid nozzle 83. The on-off valve V6 is provided on the rinse liquid piping 85. The cleaning liquid nozzle 77 and the rinse liquid nozzle 83 are fixed, but may be moved by a nozzle moving unit (not shown).

[0060] The back surface polishing mechanism 67 comprises a polishing tool (polishing brush) 89, a shaft 91, an arm 93, and an electric motor 95. The polishing tool 89 has a resin body in which abrasive grains are dispersed. For example, the polishing tool 89 has a PVA (polyvinyl alcohol) resin body in which silicon carbide (SiC) abrasive grains are dispersed. PVA is a thermosetting resin. The abrasive grains are not limited to silicon carbide, but may also be cerium oxide (CeO2), silica (SiO2), or diamond. The resin is not limited to PVA, but may also be phenolic resin, for example. The resin body may be sponge-like.

[0061] The upper end of the polishing tool 89 is attached to the lower end of a vertically extending shaft 91. The upper part of the shaft 91 is held rotatably around a vertical axis AX6 by a horizontally extending arm 93. The shaft 91 is rotated around the vertical axis AX6 by an electric motor 95, for example, via a belt or gear. The polishing tool 89 and the shaft 91 are located at the tip of the arm 93.

[0062] The back surface polishing mechanism 67 further includes a lifting drive unit (linear actuator) 97 and a swivel drive unit 98. The lifting drive unit 97 raises and lowers the polishing tool 89 and the arm 93, etc. The lifting drive unit 97 includes a guide rail 101 and a drive unit 103. The base end of the arm 93 is supported by the guide rail 101 so as to be able to move up and down. The guide rail 101 guides the arm 93 in the vertical direction. The drive unit 103 includes, for example, an electric motor and a screw shaft. The drive unit 103 may also be an air cylinder.

[0063] The swivel drive unit 98 is provided on the outside of the substrate W held by the holding and rotating unit 61. The swivel drive unit 98 rotates the polishing tool 89, arm 93, and lifting drive unit 97, etc., around the vertical axis AX7. The swivel drive unit 98 is equipped with an electric motor. The lifting drive unit 97 and the swivel drive unit 98 correspond to the polishing tool moving mechanism of the present invention. The polishing tool moving mechanism moves the polishing tool 89.

[0064] (3-3) Stocker configuration Returning to Figure 5, the production substrate processing apparatus 41 further comprises a stocker 105. The stocker 105 comprises a carrier storage shelf 107 and a carrier transport robot 109. The carrier storage shelf 107 is provided on the outer wall 43A of the indexer block 43. The carrier storage shelf 107 is a shelf for storing carriers C. A dummy substrate carrier CD is placed on the carrier storage shelf 107. The dummy substrate carrier CD is a carrier C that houses a dummy substrate DW for conditioning. Note that the indexer robot IR cannot access the carrier C placed on the carrier storage shelf 107. Note that the dummy substrate carrier CD corresponds to the dummy substrate storage section of the present invention.

[0065] The carrier transport robot 109 transports carrier C between two carrier mounting shelves 47 and carrier storage shelves 107. The carrier transport robot 109 comprises a movable gripping unit 109A, a multi-joint arm 109B, a lifting platform 109C, and a Y-direction movement unit 109D. The gripping unit 109A grips carrier C. The multi-joint arm 109B moves the gripping unit 109A horizontally. The lifting platform 109C raises and lowers the gripping unit 109A and the multi-joint arm 109B vertically. The Y-direction movement unit 109D moves the gripping unit 109A and the lifting platform 109C, etc., along a guide rail GR extending in the Y direction. The gripping unit 109A, the multi-joint arm 109B, the lifting platform 109C, and the Y-direction movement unit 109D are each equipped with one or more electric motors.

[0066] As shown in Figure 5, for example, rails 111 are provided above two carrier mounting shelves 47 and a carrier storage shelf 107. The Overhead Hoist Transport (OHT) moves along the rails 111 and transports carriers C to and from these shelves 47 and 107. The OHT includes a gripping part (not shown) for gripping carriers C. This gripping part can be raised and lowered.

[0067] (3-4) Control Unit The production substrate processing apparatus 41 comprises a control unit 121 and a storage unit (not shown). The control unit 121 controls the processing of the substrate W. The control unit 121 comprises one or more processors, such as a central processing unit (CPU). The storage unit comprises at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and a hard disk. The storage unit stores computer programs necessary for the control unit 121 to control each component of the production substrate processing apparatus 41. The storage unit stores modes for performing conditioning of the polishing tool 89 and modes for performing backside polishing of the production substrate PW.

[0068] (4) Operation of production substrate processing equipment Next, the operation of the production substrate processing apparatus 41 will be explained with reference to the flowchart in Figure 8. In this embodiment, the dummy substrate carrier CD shown in Figure 5 is assumed to be placed on the carrier storage shelf 107. The polishing tool 89 of the back surface polishing mechanism 67 shown in Figure 6 is replaced, and a new, unconditioned polishing tool 89 is attached to the shaft 91.

[0069] [Step S11] Transfer of dummy substrate to processing unit When conditioning a new polishing tool 89, the carrier transport robot 109 transports the dummy substrate carrier CD from the carrier storage shelf 107 to one of the two carrier mounting shelves 47. Inside the dummy substrate carrier CD, the main surface of the dummy substrate DW faces upward, and its back surface faces downward. This dummy substrate W has been treated with a chemical solution in the dummy substrate processing apparatus 1 and is a silicon dummy substrate having a non-mirror-finish (rough surface) main surface. A non-mirror-finish state is rougher than a mirror-finish state.

[0070] Subsequently, the indexer robot IR transports the dummy substrate DW from the dummy substrate carrier CD, which is placed on the carrier rack 47, to the inversion unit 53. The inversion unit 53 does not invert the dummy substrate DW when conditioning a new polishing tool 89. Then, the center robot CR transports the dummy substrate DW from the inversion unit 53 to the holding and rotating section 61 of the first processing unit 55A.

[0071] [Step S12] Holding and rotating the dummy circuit board Subsequently, in Figures 6 and 7, the holding and rotating part 61 holds the dummy substrate DW and rotates the dummy substrate DW around the vertical axis AX5. At this time, the non-mirror surface of the dummy substrate DW is facing upwards, and the back surface is facing downwards.

[0072] [Step S13] Conditioning The on / off valve V5 is opened. This causes SC1 (cleaning fluid) to be discharged from the cleaning fluid nozzle 77 onto the main surface of the dummy substrate DW. The SC1 on the main surface of the dummy substrate DW is spread across the entire surface by rotation, and any excess fluid is scattered outside the dummy substrate DW. The back surface polishing mechanism 67 also performs conditioning of the polishing tool 89 by moving the polishing tool 89 between the center and the periphery of the dummy substrate DW while bringing the polishing tool 89 into contact with the main surface of the rotating dummy substrate DW.

[0073] Conditioning is the process of removing excessive protrusions from the abrasive grains contained in the resin body of the polishing tool 89 by bringing the polishing brush into contact with a dummy wafer. As shown in Figures 9(a) and 9(b), the abrasive grains have protrusions (corners). The conditioning process is also called aging.

[0074] The specific operation of the back surface polishing mechanism 67 will now be described. As shown in Figure 10, the back surface polishing mechanism 67 (lifting drive unit 97 and rotation drive unit 98) moves the polishing tool 89 from the standby position P1 to the upper position P2 above the center of the dummy substrate DW. The electric motor 95 of the back surface polishing mechanism 67 rotates the polishing tool 89 around the vertical axis AX6. Then, with SC1 being discharged from the cleaning fluid nozzle 77 onto the main surface of the dummy substrate DW, the back surface polishing mechanism 67 lowers the polishing tool 89 from the upper position P2 to the center position P3. As a result, the lower surface of the polishing tool 89 comes into contact with the non-mirror-finished main surface of the dummy substrate DW. The back surface polishing mechanism 67 presses the polishing tool 89 against the main surface of the dummy substrate DW with a preset pressure (e.g., 200 mN).

[0075] Subsequently, the back surface polishing mechanism 67 moves the polishing tool 89 from the center position P3 to the peripheral position P4. One movement of the polishing tool 89 from the center position P3 to the peripheral position P4 constitutes one scan. After that, the back surface polishing mechanism 67 raises the polishing tool 89 from the peripheral position P4 to its upper position P5. Then, the back surface polishing mechanism 67 repeats the movement of the polishing tool 89 in the order of upper center position P2, center position P3, peripheral position P4, and upper peripheral position P5 until a predetermined time has elapsed.

[0076] The polishing tool 89 performs conditioning on the non-mirror-finish (rough surface) main surface of the dummy substrate DW. Therefore, the conditioning time can be reduced to, for example, about 1 / 6 compared to when conditioning is performed on the mirror-finish main surface of a normal dummy substrate DW.

[0077] [Step S14] Rinse and dry After the polishing tool 89 has been moved (scanned) for a preset time, the back surface polishing mechanism 67 moves the polishing tool 89 to the standby position P1. It also closes the on-off valve V5 and opens the on-off valve V6. As a result, the discharge of SC1 from the cleaning solution nozzle 77 is stopped, and pure water is discharged from the rinsing solution nozzle 83 onto the main surface of the dummy substrate DW. The pure water on the main surface of the dummy substrate DW is spread by rotation, and the SC1 on the main surface of the dummy substrate DW is replaced with pure water. In addition, any excess pure water is scattered outside the dummy substrate DW by rotation.

[0078] Subsequently, the on / off valve V6 is closed to stop the discharge of pure water from the rinsing liquid nozzle 83. Then, the holding and rotating unit 61 rotates the dummy substrate DW held by the spin chuck 69 at high speed to dry the dummy substrate DW. After that, the holding and rotating unit 61 stops the rotation of the dummy substrate DW. Then, the holding and rotating unit 61 releases its grip on the dummy substrate DW.

[0079] [Step S15] Transfer of dummy substrate from processing unit After conditioning the polishing tool 89, the center robot CR transports the dummy substrate DW from the holding and rotating section 61 of the first processing unit 55A to the inversion unit 53. At this time, the main surface of the dummy substrate DW is facing upwards. Therefore, the inversion unit 53 does not invert the dummy substrate DW. The indexer robot IR transports the dummy substrate DW from the inversion unit 53 to the dummy substrate carrier CD placed on the carrier rack 47. Subsequently, the carrier transport robot 109 transports (returns) the dummy substrate carrier CD from the carrier rack 47 to the carrier storage rack 107. With this, the series of operations for conditioning the polishing tool 89 is completed.

[0080] [Step S21] Polishing of the back surface of the production substrate After conditioning the polishing tool 89, that is, after the series of operations for conditioning the polishing tool 89 (steps S11 to S15) have been performed, the back surface of the production substrate PW held by the holding and rotating part 61 is polished using this polishing tool 89. Next, the polishing of the back surface of the production substrate PW will be described.

[0081] For example, as the external transport mechanism OHT moves along the guide rail 111, it transports the carrier C containing the production substrate PW to one of the two carrier racks 47. Then, the indexer robot IR transports the production substrate PW from the carrier C placed on the carrier rack 47 to the inversion unit 53. At this time, the main surface of the production substrate PW is facing upwards, and its back surface is facing downwards. The main surface of the production substrate PW is the surface on which the electronic circuit is formed (device surface).

[0082] The inversion unit 53 inverts the front and back sides of the production substrate PW. This makes the back side of the production substrate PW face upwards. The center robot CR transports the production substrate PW from the inversion unit 53 to the holding and rotating unit 61 of the first processing unit 55A. The holding and rotating unit 61 then holds the production substrate PW and rotates it around the vertical axis AX5. For example, the on / off valve V6 is opened and pure water is discharged from the rinsing liquid nozzle 83 onto the back side of the rotating production substrate PW.

[0083] With pure water being discharged onto the back surface of the production substrate PW, the back surface polishing mechanism 67 brings the polishing tool 89 into contact with the back surface of the rotating production substrate PW. While maintaining contact with the back surface, the back surface polishing mechanism 67 moves the polishing tool 89 between the center and the periphery of the production substrate PW. The movement of the polishing tool 89 is performed as shown in the conditioning movement of the polishing tool 89 in Figure 10. The polishing tool 89 is also rotated around the vertical axis AX6. Because the polishing tool 89 is conditioned, it can suppress the occurrence of scratches on the back surface of the production substrate PW. Furthermore, polishing the back surface of the production substrate PW can remove debris that could not be removed with conventional PVA sponge brushes. Therefore, for example, the defocusing problem in the EUV (Extreme Ultraviolet) exposure process can be resolved.

[0084] After polishing the back surface of the production substrate PW, the back surface polishing mechanism 67 moves the polishing tool 89 to the standby position P1. It also closes the on / off valve V6 to stop the discharge of pure water from the rinsing liquid nozzle 83. Then, the holding and rotating unit 61 rotates the production substrate PW at high speed to dry it. After that, the holding and rotating unit 61 stops the rotation of the production substrate PW and releases its grip on the production substrate PW.

[0085] Subsequently, the center robot CR transports the production substrate PW from the holding and rotating section 61 of the processing unit 55A to the inversion unit 53. The inversion unit 53 inverts the production substrate PW, which has its back surface facing upwards, so that the main surface (device surface) of the production substrate PW faces upwards. Then, the indexer robot IR transports (returns) the production substrate PW from the inversion unit 53 to the carrier C placed on the carrier rack 47. Then, the external transport mechanism OHT transports the carrier C from the carrier rack 47 to the next destination.

[0086] In this embodiment, a silicon dummy substrate DW having a non-mirror-finish main surface is used to condition a polishing tool 89 having a resin body in which abrasive grains are dispersed. Since the non-mirror-finish main surface is rougher than a mirror-finish surface, the conditioning time can be shortened compared to a silicon dummy substrate having a mirror-finish main surface. This shortens the time from when the polishing tool 89 is replaced until the production substrate PW can be processed. Therefore, production efficiency can be improved.

[0087] Figure 11 is a graph comparing a dummy substrate with a normal mirror-finish main surface (hereinafter referred to as the "normal mirror-finish substrate" in this explanation) and a dummy substrate DW with a non-mirror-finish main surface (hereinafter referred to as the "non-mirror-finish (rough surface) substrate" in this explanation). In Figure 11, the horizontal axis represents the number of scans, i.e., the total scan time. The vertical axis represents the number of scratches. The number of scratches represents the number of particles counted by the particle measurement device.

[0088] When areas counted as particles by a particle counting device were observed with a scanning electron microscope (SEM), approximately 90% were found to be scratches. Therefore, it can be said that almost all areas counted as particles are scratches.

[0089] In Figure 11, for example, a new polishing tool 89 (a PVA resin body with silicon carbide abrasive particles dispersed in it) is brought into contact with a normal mirror-finish substrate, and a total of 400 scans are performed. In this case, after a certain polishing process is performed on another new normal mirror-finish substrate (a substrate for particle evaluation) using the polishing tool 89 after 400 scans, the number of scratches (number of particles) is measured on that particle evaluation substrate. The same procedure is followed for non-mirror-finish substrates.

[0090] As shown in Figure 11, when conditioning a new polishing tool 89 using a normal mirror-finish substrate, a predetermined number of scratches is measured after 1200 scans. In contrast, when conditioning a new polishing tool 89 using the non-mirror-finish (rough-surface) substrate DW of this embodiment, the predetermined number of scratches can be achieved in about 200 scans. In other words, with the non-mirror-finish substrate DW of this embodiment, the polishing tool 89 can be conditioned in about 1 / 6 of the time.

[0091] Furthermore, the production substrate processing apparatus 41 includes a dummy substrate carrier CD for storing dummy substrates DW, and an indexer robot IR and a center robot CR for transporting the dummy substrates DW. When the polishing tool 89 is being conditioned, the control unit 121 transports the dummy substrates DW from the dummy substrate carrier CD to the holding and rotating unit 61 using the two robots IR and CR. After conditioning the polishing tool 89, the two robots IR and CR transport the dummy substrates DW from the holding and rotating unit 61 back to the dummy substrate carrier CD.

[0092] When conditioning the polishing tool 89, the dummy circuit board DW can be removed from the dummy circuit board carrier CD, and after conditioning, the dummy circuit board DW can be returned to the dummy circuit board carrier CD.

[0093] Furthermore, the production substrate processing apparatus 41 includes a carrier C for storing production substrates PW. After conditioning the polishing tool 89, the control unit 121 transports the production substrates PW from the carrier C to the holding and rotating unit 61 using two robots IR and CR, and polishes the back surface of the production substrates PW held by the holding and rotating unit 61 using the polishing tool 89. By using the conditioned polishing tool 89, the back surface of the production substrates PW can be polished while suppressing scratches. In addition, a dummy substrate DW is a tool that can shorten the time required for conditioning. Therefore, the two robots IR and CR can handle the dummy substrate DW in the same way as the production substrates PW.

[0094] The present invention is not limited to the embodiments described above, and can be modified and implemented as follows.

[0095] (1) In the above-described embodiment, the dummy substrate DW was held by a spin chuck 3A (holding and rotating part 3), and the chemical solution was discharged onto the main surface of the rotating dummy substrate DW, thereby performing chemical treatment (surface roughening) on ​​the main surface of the dummy substrate DW. In this regard, for example, a chemical solution (e.g., ammonia water at room temperature) may be stored in a chemical solution tank, and multiple dummy substrates DW may be immersed in the chemical solution stored in the chemical solution tank in a vertical position at once to perform chemical treatment. In other words, multiple dummy substrates DW may be processed in batch. When batch processing, a protective sheet may be attached to the back surface of each dummy substrate DW to prevent the back surface of each dummy substrate DW from being treated with the chemical solution.

[0096] (2) In the above-described embodiment and modification (1), in Figure 10, the polishing tool 89 was scanned from the central position P3 to the peripheral position P4. However, the polishing tool 89 may be scanned from the peripheral position P4 to the central position P3. Alternatively, the polishing tool 89 may be scanned back and forth between the central position P3 and the peripheral position P4. The same applies to the brush 31.

[0097] (3) In the production substrate processing apparatus 41 of the above-described embodiment and each modified example, the dummy substrate DW having a non-mirror surface is stored in the dummy substrate carrier CD. In this case, the production substrate PW is not stored in the dummy substrate carrier CD. The dummy substrate carrier CD is placed on the carrier storage shelf 107 of the stocker 105. For example, the dummy substrate DW may be stored in the carrier C together with the production substrate PW.

[0098] The dummy substrate DW may also be housed in a substrate storage section 123, indicated by a dashed line inside the indexer block 43. The indexer robot IR may remove the dummy substrate DW from the substrate storage section 123 when conditioning the polishing tool 89. After conditioning the polishing tool 89, the indexer robot IR may return the dummy substrate DW to the substrate storage section 123. The substrate storage section 123 may also be a carrier C.

[0099] (4) In the above-described embodiment and each modified example of the production substrate processing apparatus 41, the dummy substrate carrier CD containing the dummy substrate DW was placed on the carrier storage shelf 107. In this regard, the dummy substrate carrier CD may be transported to one of the two carrier storage shelves 47 by the external transport mechanism OHT.

[0100] (5) In the embodiments and modifications described above, the production substrate processing apparatus 41 was provided separately from the dummy substrate processing apparatus 1. In this regard, the processing block 45 of the production substrate processing apparatus 41 may include the dummy substrate processing apparatus 1 as a processing unit. In this case, the control unit 121 also controls the dummy substrate processing apparatus 1. Furthermore, the substrate processing apparatus of the present invention may include the dummy substrate processing apparatus 1 and the production substrate processing apparatus 41.

[0101] (6) In the embodiments and modifications described above, the indexer robot IR and the center robot CR transported the dummy substrate DW between the dummy substrate carrier CD placed on the carrier rack 47 and the holding and rotating unit 61. In this case, either the indexer robot IR or the center robot CR may transport the dummy substrate DW between the dummy substrate carrier CD and the holding and rotating unit 61. In this case, the inversion unit 53 is positioned so as not to interfere with the transport of the substrate W. Either the indexer robot IR or the center robot CR corresponds to the transport robot of the present invention. [Explanation of Symbols]

[0102] 1 ... Substrate processing equipment 3. Holding and rotating part 5. Chemical supply unit 13… Chemical solution nozzle 37 ... Control Unit 41… Production substrate processing equipment 55A ... Processing unit 61 ... Holding and rotating part 67… Backside polishing mechanism 89 … Polishing tools 97... Lifting drive unit 98... Swivel drive unit 121 ... Control Unit 123 ... Circuit board storage section IR… Indexer Robot CR... Center Robot W… Circuit board DW… Dummy circuit board PW… Production board C... Career CD… Carrier for dummy circuit board AX1~AX3, AX5~AX7 … Vertical axis

Claims

1. A substrate rotation step involves holding a silicon dummy substrate, which has a main surface that is entirely non-mirror-finish, in a horizontal position and rotating the dummy substrate around a vertical axis, A conditioning step is performed by bringing a polishing tool having a resin body in which abrasive particles are dispersed into contact with the main surface of the rotating dummy substrate, thereby conditioning the polishing tool. A method for conditioning polishing tools, characterized by having the following features.

2. In the method for conditioning a polishing tool according to claim 1, A method for conditioning an abrasive tool, characterized in that a cleaning solution is discharged onto the main surface of the dummy substrate while the conditioning process is being performed.

3. A substrate rotation step in which a silicon dummy substrate having a non-mirror surface is held in a horizontal position and the dummy substrate is rotated around a vertical axis, The system includes a conditioning step of performing a conditioning of the polishing tool, which has a resin body in which abrasive particles are dispersed, by bringing the polishing tool into contact with the main surface of the rotating dummy substrate, A method for conditioning a polishing tool, characterized in that the non-mirror surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution.

4. In the method for conditioning a polishing tool according to claim 3, A method for conditioning polishing tools, characterized in that the aforementioned chemical solution is ammonia water.

5. In the method for conditioning a polishing tool according to any one of claims 1 to 4, A method for conditioning a polishing tool, characterized in that the conditioning step involves moving the polishing tool between the center of the dummy substrate and the periphery of the dummy substrate while bringing the polishing tool into contact with the main surface of the rotating dummy substrate, thereby conditioning the polishing tool.

6. A method for conditioning an abrasive tool according to any one of claims 1 to 4, A polishing step in which the back surface of the production substrate is polished using the polishing tool that has undergone the conditioning, A substrate processing method characterized by comprising the following features.

7. A holding and rotating unit that holds a silicon dummy substrate, which has a main surface that is entirely non-mirror-finish, in a horizontal position and rotates the dummy substrate around a vertical axis, A polishing tool having a resin body in which abrasive particles are dispersed, A polishing tool moving mechanism for moving the polishing tool, It comprises a control unit that controls the processing of the substrate, The substrate processing apparatus is characterized in that the control unit brings the polishing tool into contact with the main surface of the dummy substrate, which is being rotated by the holding and rotating part by the polishing tool moving mechanism, thereby performing conditioning of the polishing tool.

8. In the substrate processing apparatus according to claim 7, A cleaning liquid nozzle for discharging cleaning liquid onto the dummy substrate, The system includes a cleaning liquid supply unit that supplies the cleaning liquid to the cleaning liquid nozzle, The substrate processing apparatus is characterized in that the control unit controls the cleaning liquid supply unit when the polishing tool is being conditioned, thereby causing the cleaning liquid to be discharged from the cleaning nozzle onto the main surface of the dummy substrate.

9. In the substrate processing apparatus according to claim 8, The substrate processing apparatus is characterized in that the non-mirror state is rougher than the mirror state.

10. In the substrate processing apparatus according to claim 8, The substrate processing apparatus is characterized in that the non-mirror surface is rougher than the back surface of the dummy substrate, and the back surface is rougher than the mirror surface.

11. In the substrate processing apparatus according to any one of claims 7 to 10, A dummy circuit board housing section for housing the aforementioned dummy circuit board, The system further comprises a transport robot for transporting the dummy circuit board, The substrate processing apparatus is characterized in that, when the control unit is conditioning the polishing tool, it causes the dummy substrate to be transported from the dummy substrate storage unit to the holding and rotating unit by the transport robot, and after the polishing tool has been conditioned, it causes the dummy substrate to be transported from the holding and rotating unit to the dummy substrate storage unit by the transport robot.

12. In the substrate processing apparatus according to claim 11, It also includes a carrier for storing production circuit boards, The substrate processing apparatus is characterized in that the control unit, after conditioning the polishing tool, transports the production substrate from the carrier to the holding and rotating unit by the transport robot, and polishes the back surface of the production substrate held in the holding and rotating unit using the polishing tool.

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