Purge of the spindle arm to prevent deposition and wafer slippage.

Abstract

To provide a purging system to prevent deposition on spindle arms in a processing chamber of a substrate processing system.SOLUTION: A system includes a plurality of spindle arms 204-1 to 204-4 located above a plurality of stations 202-1 to 202-4 in a processing chamber 200 to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises a plurality of gas lines 230. The gas lines include a first gas line arranged below the stations to supply a purge gas, and a second gas line extending upwards from the first gas line to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.SELECTED DRAWING: Figure 2

Description

Technical Field

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[0001] Cross - Reference to Related Applications This disclosure is a PCT international application of U.S. Patent Application No. 62 / 949,205, filed on December 17, 2019. The entire disclosure of the application referenced above is incorporated herein by reference.

[0002] Technical Field This disclosure relates generally to substrate processing systems, and more specifically to a purge system for preventing deposition on a spindle arm within a processing chamber of a substrate processing system.

Background Art

[0003] The description of "Background Art" provided herein is for the purpose of presenting the context of the present disclosure generally. The achievements of the inventors named herein within the scope described in the "Background Art" of this specification, as well as aspects of this specification that may not be regarded as prior art at the time of filing, are not recognized as prior art to the present disclosure, either explicitly or implicitly.

[0004] Substrate processing systems typically include a plurality of processing chambers (also referred to as process modules) for performing deposition, etching, and other processes on substrates such as semiconductor wafers. Examples of processes that may be performed on a substrate include, but are not limited to, plasma - enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, and sputtering physical vapor deposition (PVD) processes. Additional examples of processes that may be performed on a substrate include, but are not limited to, etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.), and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support such as a pedestal or electrostatic chuck (ESC) within the processing chamber of the substrate processing system. During deposition, a gas mixture containing one or more precursors is introduced into the processing chamber, generating plasma and activating a chemical reaction. During etching, a gas mixture containing etching gas is introduced into the processing chamber, generating plasma and activating a chemical reaction. Typically, a computer-controlled robot transfers the substrate from one processing chamber to another in the order in which the substrate is processed. [Overview of the project]

[0006] The system comprises multiple spindle arms positioned above multiple stations within a processing chamber, for transporting semiconductor substrates between stations. The spindle arms are present within the processing chamber during the processing of the semiconductor substrates. The system includes a first gas line located below the stations to supply purge gas. The system also includes a second gas line extending upward from the first gas line to supply purge gas to the spindle arms during the processing of the semiconductor substrates within the processing chamber.

[0007] Another feature of the system is that it further includes channels located near the top of each station. These channels are in fluid communication with one of the second gas lines and include an outlet for supplying purge gas to one of the spindle arms.

[0008] In another feature, the system further includes a connection assembly for sealing the channel to one of the second gas lines.

[0009] Another feature is that the connection assembly includes an orifice to control the flow of purge gas into the channel.

[0010] Another feature of the system is that it further includes channels located near the top of each station. These channels are in fluid communication with one of the second gas lines and supply purge gas to two spindle arms located on each side of the channel, with outlets located near each end of the channel.

[0011] Another feature is that the system further includes a liner that lines the top of each station. The liner has channels.

[0012] Another feature is that the second gas line is located around the station.

[0013] In another feature, the system further comprises a supply source that supplies purge gas to the first gas line via a regulator that adjusts the flow rate of purge gas to the first gas line.

[0014] In other features, the system further includes a controller for controlling the process being performed on the semiconductor substrate, controlling the spindle arm during the process to transport the semiconductor substrate between stations, and controlling the flow rate of the purge gas supplied to the first gas line.

[0015] Another feature is that the system further includes a spindle located in the center of the processing chamber, with a spindle arm that moves laterally across stations arranged around the center.

[0016] Further features include a system comprising multiple gas lines arranged in a plane around the base portion of N stations, where N is an integer greater than 2. The N stations are arranged around the center of a processing chamber for processing semiconductor substrates. The system comprises N liners lining the upper outer edges of each of the N stations. Each of the N liners includes channels extending outward from the outer edge parallel to the plane and in fluid communication with the multiple gas lines. The channels are arranged along the outer edge and have closed first and second ends adjacent to the center of the processing chamber, with outlets at each of the first and second ends, distributing the gas laterally away from the outer edge. The system comprises N spindle arms for transporting semiconductor substrates between the N stations. Each of the N spindle arms extends laterally parallel to the plane from a spindle at the center of the processing chamber and is positioned between two adjacent liners of the N liners, including a region that contacts the semiconductor substrate during transport. These regions are adjacent to the outlets of the channels in two adjacent liners of the N liners. The system comprises N vertical gas lines, each positioned around N stations. Each of the N vertical gas lines is in fluid communication with multiple gas lines and N liner channels.

[0017] In other features, each of the N vertical gas lines is sealed and connected to a corresponding channel via an inlet to a corresponding one of the N liners, and the inlet has an orifice that is in fluid communication with the corresponding channel.

[0018] Other features include an inlet comprising a connection to one of N corresponding vertical gas lines, an O-ring surrounding the inlet orifice that seals the orifice to the corresponding channel, and a plurality of notches for aligning the inlet to one of the N corresponding liners.

[0019] In other features, each channel includes multiple exits, and each region of the N spindle arms that contact the semiconductor substrate is close to the multiple exits of the channels of two corresponding adjacent liners out of the N liners.

[0020] In other features, multiple gas lines are interconnected using connecting assemblies. Each connecting assembly includes a first part connected to a first gas line of the multiple gas lines, a second part connected to a second gas line of the multiple gas lines, an O-ring that seals the first and second parts together, and a number of vent screws arranged around the O-ring that fasten the first and second parts together. The first and second gas lines are in fluid communication through the first and second parts.

[0021] In other features, each of the N vertical gas lines is positioned away from the vertical movement path of the semiconductor substrate at each of the N stations.

[0022] In other features, multiple gas lines are connected to a gas supply source located outside the processing chamber. The system further includes a pressure regulator located outside the processing chamber to regulate the flow rate of gas supplied from the supply source to the multiple gas lines.

[0023] In other features, the exits of the N liner channels output gas to the region of the N spindle arms during semiconductor substrate processing.

[0024] In other features, the exits of the N liner channels output gas to the regions of the N spindle arms, and the gas prevents or reduces the deposition of material on the regions of the N spindle arms during the processing of the semiconductor substrate.

[0025] In other features, the system further includes a controller for controlling a process executed on a semiconductor substrate, controlling N spindle arms during the process to transfer the semiconductor substrate between N stations, and controlling the flow rate of purge gas supplied to a plurality of gas lines. The outlets of the channels of the N liners output gas to the areas of the N spindle arms to prevent or reduce the deposition of materials used in the process on the areas of the N spindle arms.

[0026] In yet other features, the method includes routing a plurality of gas lines around the bottom of a plurality of stations of a processing chamber. The stations are arranged around a spindle located at the center of the processing chamber. The spindle has a spindle arm that exists between the upper parts of the stations and transfers the semiconductor substrate between the stations. The method includes extending vertical gas lines from a part of the plurality of gas lines to the upper part of each station around the periphery of each station. The method includes arranging channels in a liner aligned with the outer edge of the upper part of each station. The channels are in fluid communication with the vertical gas lines, are semi-circular, have both ends close to the center of the processing chamber closed, and include a plurality of outlets at both ends for distributing gas to adjacent spindle arms among the spindle arms. The method includes supplying gas to the channels through the plurality of gas lines during the processing of the semiconductor substrate.

[0027] In another feature, the method further includes distributing gas from the channels into the spindle arms to prevent or reduce the deposition of materials on the spindle arms during the processing of the semiconductor substrate.

[0028] In another feature, the method further includes controlling the flow rate of the gas supplied to the plurality of gas lines.

[0029] In another feature, the gas includes an inert gas or a non-reactive gas.

[0030] Other features of the method further include controlling a process being performed on a semiconductor substrate, controlling a spindle arm during the process to transfer the semiconductor substrate between stations, controlling the flow rate of gas supplied to multiple gas lines during the process, and distributing gas from channels to the spindle arm to prevent or reduce the deposition of material used in the process on the spindle arm.

[0031] Further areas of application of this disclosure will become apparent from the "Modes for Carrying Out the Invention," the "Claims," ​​and the drawings. The "Modes for Carrying Out the Invention" and specific examples are for illustrative purposes only and are not intended to limit the scope of the disclosure.

[0032] This disclosure will be better understood from the detailed description and accompanying drawings. [Brief explanation of the drawing]

[0033] [Figure 1] Figure 1 shows an example of a substrate processing system equipped with a processing chamber.

[0034] [Figure 2] Figure 2 shows an example of a processing chamber containing multiple stations.

[0035] [Figure 3] Figure 3 shows a cross-sectional view of the processing chamber shown in Figure 2.

[0036] [Figure 4] Figure 4 shows the spindle arm used to transfer the substrate between the stations in Figure 2.

[0037] [Figure 5] Figure 5 shows another example of a processing chamber containing multiple stations.

[0038] [Figure 6]Figure 6 shows the gas lines of the purge system of this disclosure, which may be used in the processing chambers of Figures 2 and 5.

[0039] [Figure 7] Figure 7 shows the interconnections of the gas lines.

[0040] [Figure 8] Figure 8 shows an example of a liner entrance, which is part of the purge system and station shown in Figures 2 and 5.

[0041] [Figure 9] Figure 9 shows an example of a surface mount assembly used to interconnect multiple elements or sections of a gas line.

[0042] [Figure 10] Figure 10 shows the top and bottom views of one of the liners.

[0043] [Figure 11] Figure 11 shows a more detailed top and bottom view of one of the liners.

[0044] [Figure 12] Figure 12 shows a channel in one of the liners, which is used to distribute purge gas onto the spindle arm to prevent the accumulation of deposited material on the spindle arm.

[0045] [Figure 13] Figure 13 shows various elements or sections of gas lines and their interconnection assemblies. [Figure 14] Figure 14 shows various elements or sections of gas lines and their interconnection assemblies.

[0046] [Figure 15] Figure 15 shows details of one of the interconnection assemblies.

[0047] [Figure 16] Figure 16 shows details of the inlet structure that supplies purge gas from the gas line to a channel in the liner for purging the spindle arm.

[0048] [Figure 17] Figure 17 shows the structure of another interconnection assembly in detail.

[0049] [Figure 18] Figure 18 shows a flowchart of a method for purging the spindle arm during wafer processing. [Modes for carrying out the invention]

[0050] In drawings, reference numbers may be reused to identify similar and / or identical elements.

[0051] In a ringless wafer transfer system, a spindle arm can be used to transfer wafers between stations within a processing module. The spindle arm, located within the processing module, may accumulate deposition material from the deposition process performed within the module. In processing modules that deposit slippery films onto wafers, after a period of time, the accumulation of deposition material on the spindle arm may cause the wafer to slip off the spindle arm while it is indexing between stations. The accumulation of deposition material on the spindle arm over time limits the batch size of the processing module, which significantly impacts throughput. This disclosure provides a purging system capable of generating concentrated purge around the wafer contact points on the spindle arm. The purging system prevents or reduces the accumulation of deposition material on the spindle arm and prevents wafer slippage.

[0052] A ringless wafer transfer system features a spindle arm positioned between two adjacent stations within a processing module. The spindle arm can move over a pedestal. A lift pin transfers the wafer from the pedestal to the spindle arm. The spindle arm can then index and move the wafer from one station to another within the processing module. The spindle arm may reside within the processing module. The spindle arm is exposed to the deposition process performed on the wafer within the processing module. Therefore, the film deposited on the wafer may also accumulate on the spindle arm during the deposition process. After the accumulation of slippery film on the spindle arm, the wafer being transported by the spindle arm may slip off the spindle arm during indexing. In most cases, when a wafer slips off, it can result in the wafer being damaged or discarded. Furthermore, in most cases, the processing module must be opened to retrieve the wafer, which causes significant downtime. One way to mitigate the wafer slip problem is to reduce the batch size, but this affects the tool's throughput.

[0053] This disclosure generally provides a purging system for introducing a purge gas onto the contact pads of a spindle arm to prevent deposition on the contact pads of the spindle arm. Alternatively, the purging system may also introduce a purge gas over the entire spindle arm to prevent deposition on the spindle arm. The purging system can reduce or mitigate the risk of wafer slippage. Purging is performed during the deposition process; that is, purging is performed while deposition is progressing on the wafer. The purge gas can be any inert gas. For example, argon can be used as the purge gas.

[0054] The purge gas can be introduced into the processing chamber through an opening or inlet of the processing chamber using a custom seal. The flow rate of the purge gas can be adjusted using a pressure regulator. The inlet to the processing chamber may have an orifice. The flow rate of the purge gas into the processing chamber can be controlled by controlling the pressure and the size of the orifice.

[0055] The purge gas can be evenly distributed to stations within the processing chamber using a network of gas lines within the chamber. The gas lines can be interconnected using interconnect assemblies with custom-designed seals. The purge gas can then flow into liner / filler plates surrounding each station. The inlets to the liners may have orifices to evenly distribute the gas between the stations in the processing chamber. The liners may have internal channels that take in the purge gas from one inlet and guide it to four outlets (called purge orifices) concentrated around the wafer contact points of the spindle arms. For example, the gas lines and liners may be made of aluminum. The liners may be manufactured using, for example, a friction stir welding process.

[0056] In particular, the purging system may be independent of the recipe and chemicals used for wafer deposition. That is, a purging process using a purging gas can prevent or reduce deposition on the spindle arm, regardless of the recipe and chemicals used to deposit material on the wafer. Furthermore, the purging process prevents or reduces deposition on the spindle arm, regardless of the pressure and temperature used in the processing chamber during wafer deposition. The purging process can be performed during wafer deposition. For example, the gas line runs beneath the lift pin ring at each station. Therefore, the gas line does not obstruct the movement of the lift pins.

[0057] This disclosure is structured as follows: First, an example of a processing chamber is shown and described with reference to Figure 1. Then, various layouts and structures of the purging system according to this disclosure are shown and described with reference to Figures 2 to 9. Subsequently, additional drawings and structural details of various elements of the purging system are shown and described with reference to Figures 10 to 17. A method for purging the spindle arm during wafer processing is shown and described with reference to Figure 18.

[0058] Figure 1 shows an example of a substrate processing system 100 comprising a processing chamber 102. Although the example is described in relation to plasma-enhanced chemical deposition (PECVD), the teachings of this disclosure can be applied to other types of substrate processing, such as atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), CVD, or other processes including etching processes. System 100 comprises a processing chamber 102 that surrounds the other components of System 100 and contains (if used) RF plasma. The processing chamber 102 comprises an upper electrode 104 and an electrostatic chuck (ESC) 106 or other substrate support. During operation, the substrate 108 is placed on the ESC 106.

[0059] For example, the upper electrode 104 may include a gas distributor 110, such as a showerhead, for introducing and distributing process gas. The gas distributor 110 may include a stem portion, one end of which is connected to the upper surface of the processing chamber 102. The base portion of the showerhead is substantially cylindrical and extends radially outward from the opposite end of the stem portion, at a distance from the upper surface of the processing chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead includes a plurality of holes through which vaporized precursor, process gas, or purge gas flows. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another form.

[0060] The ESC106 includes a base plate 112 that functions as a lower electrode. The base plate 112 supports a heating plate 114 which may correspond to a ceramic multizone heating plate. A thermal resistance layer 116 may be placed between the heating plate 114 and the base plate 112. The base plate 112 may include one or more channels 118 for flowing a coolant through the base plate 112.

[0061] When plasma is used, the RF generation system 120 generates an RF voltage and outputs it to either the upper electrode 104 or the lower electrode (e.g., the base plate 112 of the ESC 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or floating. By example only, the RF generation system 120 may include an RF generator 122 that generates RF power, which is supplied to the upper electrode 104 or the base plate 112 by a matching and distribution network 124. In other examples, the plasma may be generated inductively or remotely.

[0062] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas source 132), where N is an integer greater than zero. The gas source 132 is connected to the manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valve 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controller 136). The vapor delivery system 142 supplies the vaporized precursor to the manifold 140 or another manifold (not shown) connected to the processing chamber 102. The output of the manifold 140 is supplied to the processing chamber 102.

[0063] The temperature controller 150 may be connected to a plurality of thermal control elements (TCEs) 152 located within the heating plate 114. The temperature controller 150 may be used to control the plurality of TCEs 152 to control the temperatures of the ESC 106 and the substrate 108. The temperature controller 150 may communicate with the coolant assembly 154 to control the flow of coolant through the channel 118. For example, the coolant assembly 154 may include a coolant pump, a reservoir, and one or more temperature sensors (not shown). The temperature controller 150 operates the coolant assembly 154 to selectively flow coolant through the channel 118 to cool the ESC 106. Valves 156 and pump 158 may be used to exhaust the reactants from the processing chamber 102. The system controller 160 controls the components of the system 100.

[0064] The lift pins are held by a lift pin holder positioned on a lift pin ring (as shown and described below with reference to Figure 3) and are used to enable the delivery and removal of the substrate 108 from the processing chamber 102 using a robotic arm (e.g., a spindle arm as described below). Typically, the upper end of the lift pins is located coplanar with or below the upper surface of the substrate support assembly 106. During substrate delivery or removal, the lift pins are lifted relative to the upper surface of the substrate support assembly 106, raising the substrate 108 and creating a clearance between the substrate 108 and the substrate support assembly 106. This clearance between the substrate 108 and the substrate support assembly 106 allows for the insertion or removal of the robotic arm's end effector.

[0065] Figure 2 shows an example of a processing chamber 200 including multiple stations. For example, the processing chamber 200 includes four stations 202-1, 202-2, 202-3, and 202-4 (collectively, multiple stations 202; or synonymously, station 202). In general, the processing chamber 200 may include two or more stations 202. The processing chamber 200 includes multiple spindle arms. For example, since the processing chamber 200 includes four stations 202, the processing chamber 200 includes four spindle arms 204-1, 204-2, 204-3, and 204-4 (collectively, multiple spindle arms 204; or synonymously, spindle arms 204). The spindle 205 drives the spindle arms 204. A controller (e.g., controller 160 shown in Figure 1) controls the spindle 205 and the spindle arms 204.

[0066] Each station 202 includes a liner that lines the upper outer edge of the station 202 along a plane parallel to the plane in which the wafer lies within the station 202 during processing. For example, since the processing chamber 200 includes four stations 202, the processing chamber 200 includes four liners 206-1, 206-2, 206-3, and 206-4 (collectively, liner 206). Each liner 206 includes a channel for gas flow (shown as element 207 in Figure 12). Each liner 206 includes an inlet that is in fluid communication with the channel for receiving purge gas. Liners 206, also called filler plates, are shown in detail in Figures 10–12.

[0067] Each station 202 includes an inlet with an orifice that fluidly communicates with the inlet of the liner 206 and supplies purge gas into the liner 206 (i.e., into the channels of the liner 206). For example, station 202 includes inlets 208-1, 208-2, 208-3, and 208-4 (collectively, inlet 208) that supply purge gas into the liner 206, respectively. Inlets 208 are shown in detail in Figures 8 and 16.

[0068] The channels in each liner 206 serve a role for the two spindle arms 204. The channels are embedded in the liner 206, as shown in Figure 12. The channels are shown as element 207 in Figure 12. Thus, it can also be said that each channel serves a role for the two spindle arms 204. The terms channel and liner can be used interchangeably when describing the delivery of purge gas to the spindle arms 204 through the liner 206.

[0069] The channel in each liner 206 is semicircular, closed at both ends, and has four outlets (shown in detail in Figures 4 and 6) for delivering purge gas to two spindle arms 204. The channel in each liner 206 includes two halves, namely a front half extending from the inlet (or from the inlet 208) to the first end of the liner 206 (or channel) and a rear half extending from the inlet (or from the inlet 208) to the second end of the liner 206 (or channel).

[0070] In each liner 206 (i.e., each channel), a first set of two outlets is located in the first half of liner 206 (or channel) on the first side of inlet 208, and a second set of two outlets is located in the second half of liner 106 (or channel) on the second side of inlet 208. Each of the first and second sets of outlets may contain one or more outlets.

[0071] In each liner 206 (i.e., in each channel), a first set of two outlets located in the front half of the liner 206 outputs purge gas to one side of the first spindle arm 204 adjacent to the front half of the liner 206. In each liner 206 (i.e., in each channel), a second set of two outlets located in the rear half of the liner 206 outputs purge gas to one side of the second spindle arm 204 adjacent to the rear half of the liner 206.

[0072] For example, in liner 206-1, the first set of two outlets outputs purge gas to the first side of spindle arm 204-1 adjacent to the front half of liner 206-1, and the second set of two outlets outputs purge gas to the first side of spindle arm 204-4 adjacent to the rear half of liner 206-1.

[0073] In liner 206-2, the first set of two outlets outputs purge gas to the second side of spindle arm 204-1 adjacent to the front half of liner 206-2, and the second set of two outlets outputs purge gas to the first side of spindle arm 204-2 adjacent to the rear half of liner 206-2.

[0074] In liner 206-3, the first set of two outlets outputs purge gas to the second side of spindle arm 204-2 adjacent to the front half of liner 206-3, and the second set of two outlets outputs purge gas to the first side of spindle arm 204-3 adjacent to the rear half of liner 206-3.

[0075] In liner 206-4, the first set of two outlets outputs purge gas to the second side of spindle arm 204-3 adjacent to the front half of liner 206-4, and the second set of two outlets outputs purge gas to the second side of spindle arm 204-4 adjacent to the rear half of liner 206-4.

[0076] Multiple gas lines 230 (shown in detail in Figures 6, 7, 13, and 14) are distributed throughout the bottom region of station 202 to distribute purge gas to liner 206 (i.e., to channels in liner 206). The processing chamber 200 includes an inlet 210 through which the gas lines 230 receive purge gas from an external source of purge gas. The inlet 210 is sealed in the bottom wall of the processing chamber 200 using a custom seal. The inlet 210 is connected to a source of purge gas located outside the processing chamber 200 (e.g., one or more of the elements 132 shown in Figure 1).

[0077] The inlet 210 is connected to a purge gas source through a valve and pressure regulator, collectively shown as 212. Element 212 is connected to the purge gas source through one or more selectable connections. For example, two such selectable connections, which may be used to select different purge gases (e.g., argon or other non-reactive gases), are generally shown in 213. The valve and pressure regulator can be used to control the flow rate of purge gas entering the gas line 230 through the inlet 210. Alternatively, instead of using the valve, pressure regulator, and inlet 212, the flow rate can be controlled using a mass flow controller (MFC), such as element 136 shown in Figure 1.

[0078] In the example shown in Figure 2, stations 202 are also numbered from 1 to 4. Inlet 210 is shown, for illustrative purposes only, as being located below station 3. Alternatively, inlet 210 may be located below any other station, or inlet 210 may be any aperture / hole located anywhere within the processing chamber 200. Furthermore, for illustrative purposes only, the connection or routing of gas line 230 is shown as from station 3 to station 4, and from station 3 to station 2, and then to station 1. In the example shown in Figure 2, for illustrative purposes only, gas line 230 starts at inlet 210 at station 3 and ends at station 4. Gas line 230 starts at station 3 and ends at station 1. In other words, in the example shown in Figure 2, for illustrative purposes only, gas line 230 includes two branches extending from inlet 210 and station 3. The first branch extends from station 3 to station 4, and the second branch extends from station 3 to station 1.

[0079] However, the connection or routing of the gas line 230 may differ from that shown in Figure 2. For example, Figure 5 shows another example of the connection or routing of the gas line 230 from station 3 to station 2, station 1, and then to station 4. Thus, the inlet 210 of the gas line 230 into the processing chamber 200 can be located below any of the stations 202, and the configuration in which the gas line 230 is connected or routed between stations 202 is modifiable. For example, the gas line 230 may be connected or routed to stations 202 continuously or in one or more branches. Thus, the design or distribution of the gas line 230 is modular and flexible.

[0080] Figure 3 shows a cross-sectional view of the processing chamber 200 and provides additional details of the stations 202. Each station 202 includes a lift pin ring and three lift pins. For example, station 202-2 includes a lift pin ring 250 and three lift pins 252-1, 252-2, and 252-3 (collectively, lift pin 252). Although the lift pin ring 250 and lift pins 252 are identified in only one station 202-2, it is understood that each station 202 includes a lift pin ring similar to the lift pin ring 250 and lift pins similar to the lift pins 252. Gas lines 230 (shown in detail in Figures 6 and 7) are distributed throughout the bottom region of station 202 in a plane parallel to and below the plane of the lift pin ring 250, which is parallel to the plane in which the wafers are located in each station 202 during processing.

[0081] Figure 4 shows the spindle arm 204 in more detail. Spindle arm 204-1 is shown only as an example. It is understood that each spindle arm 204 contains similar elements to those shown and described with reference to spindle arm 204-1. Liners 206-2 and 206-1 deliver purge gas to spindle arm 204-1. Two of the four outlets (also called purge orifices) of liner 206-2 that supply purge gas to spindle arm 204-1 are identified as elements 260-1 and 260-2. Two additional outlets of the four outlets (also called purge orifices) of liner 206-1 that supply purge gas to spindle arm 204-1 are not visible in this figure. These outlets 260-1, 260-2, etc. of each liner 206 are collectively referred to as outlets or purge orifices 260.

[0082] Each spindle arm 204 includes four contact points that contact the wafer. The number of contact points on a spindle arm can vary. In this figure, only two of the four contact points on spindle arm 204-1 are visible. The two contact points are identified as elements 262-1 and 262-2. As shown in the figure, the two exits 260-1 and 260-2 of liner 206-2 are located adjacent to the two contact points 262-1 and 262-2 of spindle arm 204-1, respectively. Similarly, the two exits of liner 206-1, which are not visible in this figure, are also located adjacent to two other contact points on spindle arm 204-1, which are also not visible in this figure.

[0083] Therefore, the four outlets of two liners 206 (e.g., liners 206-1 and 206-2 in the illustrated example) from two adjacent stations 202 (e.g., stations 202-2 and 202-1 in the illustrated example) are located adjacent to the four contact points of each spindle arm 204. Generally speaking, the four outlets or purge orifices 260 of two adjacent liners 206 supply purge gas to the spindle arm 204 that are close to the four contact points 262 of the spindle arm 204.

[0084] Figure 5 shows a top view of the processing chamber 200, illustrating an example different from the one shown in Figure 2. In this example, the connection or routing of the gas line 230 differs from that in Figure 2. For example, the gas line 230 is connected or routed from station 3 to station 2, station 1, and then to station 4. In this example, the gas line 230 starts at the inlet 210 of station 3 and ends at station 4. In Figure 5, as in the example in Figure 2, the gas line 230 lies in the plane below the plane where the lift pin ring 250 resides, which is parallel to the plane in which the wafers reside at each station 202 during processing.

[0085] Figure 6 shows the gas line 230 in detail. For the sake of simplicity in the illustration, only one outlet 260 is depicted for each station 202. However, a designation such as " / 4" indicates that each station 202 has four outlets 260, as explained with reference to Figure 4 above. Figure 6 shows only one exemplary configuration of the gas line 230 corresponding to the connection or routing of the gas line 230 shown in Figure 5. Non-limiting examples of other configurations or variations include: For example, the inlet 210 may be moved from station 3 to any other station. For example, a branch associated with station 4 may be moved above a branch associated with station 3 (as shown in the example in Figure 2). These examples are not mutually exclusive; that is, both the inlet 210 and the branch associated with station 202 may be moved to locations different from those shown.

[0086] Figure 7 shows the interconnections of the gas lines 230 in detail. Again, Figure 7 shows only one exemplary configuration of the gas lines 230 corresponding to the connections or routing of the gas lines 230 shown in Figure 5. As explained with reference to Figure 6 above, other additional configurations, including the example shown in Figure 2, are feasible and intended.

[0087] As shown in the figures, the gas line 230 is distributed throughout the station 202, both in the bottom region of the station 202 and around it. The gas line 230 lies in a plane parallel to the plane in which the lift pin ring 250 and the wafer reside. At each station 202, a portion of the gas line 230 extends vertically (i.e., perpendicular to the plane in which the lift pin ring 250 and the wafer reside) and mates (i.e., seals) with the inlet 208 of the liner 206. The structure of the inlet 208 is shown and described in detail with reference to Figures 8 and 16 below.

[0088] The gas line 230 comprises multiple elements or sections interconnected using surface mount assemblies 290, which are shown and described in detail with reference to Figures 9 and 13-15 below. An additional interconnection assembly 300 used to interconnect elements or sections of the gas line 230 at corners (where the gas line 230 turns sharply) is shown in Figure 17.

[0089] Figure 8 shows an example of an inlet 208 for liner 206. As described above, each station 202 includes one liner 206 and one inlet 208 for liner 206. The structure of each inlet 208 is as shown in Figure 8. Inlet 208 includes a connection 280 to a portion of gas line 230, extending vertically upward from the bottom of gas line 230. Inlet 208 includes an orifice 282 that is fluidly connected to the channel of liner 206. The orifice 282 mates with the inlet 209 of channel 207 shown in Figure 12. Inlet 208 includes an O-ring 284 surrounding the orifice 282. The O-ring 284 mates with liner 206 (i.e., the inlet 209 of channel 207) and forms an airtight seal with liner 206 (i.e., the inlet 209 of channel 207). The entrance 208 includes a notch 286 for alignment with the liner 206. An additional diagram of the entrance 208 is shown in Figure 16.

[0090] Figure 9 shows an example of a surface mount assembly 290 used to interconnect multiple elements or sections of a gas line 230. The surface mount assembly 290 includes an upper section 292 and a lower section 294. Each of the upper section 292 and the lower section 294 includes a connection to an element or section of the gas line 230. Each of the upper section 292 and the lower section 294 includes an orifice 295 for fluid connection of the gas line 230 connected using the surface mount assembly 290. The upper section 292 mates with the lower section 294 via an O-ring 296 (i.e., seals together), and the O-ring 296 forms an airtight seal between the upper section 292 and the lower section 294.

[0091] In addition, the upper part 292 is secured to the lower part 294 using a number of screws 298. The screws 298 are positioned around and surrounding the O-ring 296. The screws 298 are vented screws to avoid any trapping of purge gas. In another example of a surface mount assembly 290 connecting an inlet 210 to a gas line 230, the upper part 292 includes two connections: a first connection to the inlet 210 and a second connection to an element or section of the gas line 230. Further diagrams of the surface mount assembly 290 are shown in Figure 15.

[0092] The type of material used for the O-ring 296 may depend on the temperature of the surface mount assembly 290. The temperature of the surface mount assembly 290 can vary depending on factors including the process temperature, pedestal setpoint temperature, and pedestal emissivity. For example, an O-ring 296 made of polymer can be used when the temperature of the surface mount assembly 290 is below approximately 300 degrees Celsius, while an O-ring 296 made of metal or alloy can be used when the temperature of the surface mount assembly 290 exceeds approximately 300 degrees Celsius. The O-ring 284 shown in Figure 8 can be made of a similar material to the O-ring 296. However, since heat is absorbed from the O-ring 284 faster than from the O-ring 296, the O-ring 284 does not get as hot as the O-ring 296.

[0093] During use, while the wafer is being processed at station 202 (for example, using a deposition process), a controller (e.g., controller 160 shown in Figure 1) controls the flow rate of purge gas supplied to the gas line 230 by controlling the valve and pressure regulator shown at 212. The purge gas is delivered through outlet 260 in liner 206, generally to the spindle arm 204, more specifically to the contact point 262 of the spindle arm 204. The purge gas prevents or reduces the deposition of material deposited on the wafer, generally on the spindle arm 204, more specifically on the contact point 262 of the spindle arm 204.

[0094] Figures 10 to 17 show additional details and diagrams of the liner 206, the channel 207 within the liner 206, the gas line 230 and their interconnections including interconnection elements 290 and 300, and the inlet 208.

[0095] Figures 10 to 12 show various diagrams and details of the liner 206. Figure 10 shows a top view and a bottom view of one of the liners 206. The outlet 260 for distributing purge gas to the spindle arm 204 is visible in the top view. Figure 11 shows a top view and a bottom view of one of the liners 206 in more detail. The channel 207 shown in Figure 12 is viewed in section AA in Figure 11. Detail B of the bottom view of the liner 206 in Figure 11 shows a portion of the inlet 208. As described above, Figure 12 shows the channel 207 and the inlet 209 into the channel 207. The inlet 208 of the liner 206 mates with the inlet 209 of the channel 207, as described above.

[0096] Figures 13 and 14 show various elements or sections of the gas lines 230 and their interconnection assemblies 290 and 300. Figures 13 and 14 also show an inlet 210 that receives purge gas from an external source and an inlet 208 of the liner 206 that supplies purge gas to the channels 207 in the liner 206, as described above.

[0097] Figure 15 shows details of the structure of the interconnection assembly 290, which is also shown in Figure 7. Figure 16 shows details of the structure of the inlet 208, which is also shown in Figure 8. Figure 17 shows details of the structure of the interconnection assembly 300, which is also shown in Figure 7. The interconnection assembly 300 includes an orifice 300 for fluid connection of the gas line 230 connected using the interconnection assembly 300.

[0098] Figure 18 shows a flowchart of method 400 for purging spindle arms during wafer processing. For example, method 400 may be performed by controller 160 shown in Figure 1. In 402, method 400 starts processing wafers in a processing chamber comprising a plurality of stations, further comprising spindle arms for transferring wafers between stations during processing. In 404, method 400 supplies inert gas to channels provided in a liner lining the upper outer edge of the stations via gas lines routed around the stations. In 406, method 400 controls the flow rate of inert gas supplied to the gas lines. In 408, method 400 controls the spindle arms to transfer wafers between stations during wafer processing. In 410, method 400 distributes the inert gas from an outlet in the channels to spindle arms located between the upper parts of the stations. In 412, method 400 distributes an inert gas from the channel to the spindle arm during wafer processing to prevent material from accumulating on the spindle arm during wafer processing.

[0099] The foregoing description is essentially illustrative and is not intended to limit the Disclosure, its application, or its use. The broad teachings of the Disclosure can be realized in various ways. Therefore, although the Disclosure includes certain examples, the true scope of the Disclosure should not be limited in this way, as other modifications will become apparent when considering the drawings, specification, and the claims below. It should be understood that one or more steps in the Method may be performed in different orders (or simultaneously) without altering the principles of the Disclosure. Furthermore, although each embodiment is described above as having certain features, one or more of these features described in relation to any embodiment of the Disclosure may be implemented in any of the other embodiments and / or combined with any of the features of the other embodiments, even if such combinations are not explicitly described. In other words, the embodiments described are not mutually exclusive, and rearranging the order of one or more embodiments remains within the scope of the Disclosure.

[0100] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upper,” “below,” and “positioned.” Unless explicitly stated to be “direct,” where the above disclosure describes a relationship between a first element and a second element, that relationship may be a direct relationship in which there are no other intervening elements between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist between the first and second elements (either spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning a logic using non-exclusive OR (A OR B OR C) and not as “at least one of A, at least one of B, and at least one of C.”

[0101] In some implementations, the controller is part of a system which may be part of the embodiments described above. Such a system may comprise a semiconductor processing apparatus including processing tools(s), chambers(s), processing platforms(s), and / or specific processing components (such as wafer pedestals, gas flow systems). These systems may be incorporated into electronics for controlling pre-processing, in-processing, and post-processing operations on semiconductor wafers or substrates. The electronics may be referred to as “controllers” which control various components or sub-components of the system(s). Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including, but are not limited to, the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and work settings, loading and unloading of wafers into and out of tools and other transport tools connected to or interfaced with a particular system and / or load lock.

[0102] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software, which receives and issues instructions, controls operations, enables cleaning operations, and enables endpoint measurements. The integrated circuit may include a chip in the form of firmware that stores program instructions, a chip defined as a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that define work parameters for performing a particular process on or against a semiconductor wafer, or against a system. In some embodiments, the work parameters may be part of a recipe defined by a process engineer to implement one or more processing steps when fabricating one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0103] In some implementations, the controller may be part of a computer that is integrated into the system, coupled to the system, networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or part of the fab host computer system, thereby enabling remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, examine trends or performance indicators from multiple manufacturing operations, modify parameters of the current process, set up subsequent processing steps for the current process, or start a new process.

[0104] In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network that may include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in data format that specify parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller interfaces with or is configured to control.

[0105] Therefore, as described above, the controllers may be distributed, for example, by comprising one or more individual controllers networked with one another and aimed at a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes may be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer), which together control the processes in the chamber.

[0106] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that are related to or may be used in the fabrication and / or manufacture of semiconductor wafers.

[0107] As described above, depending on the process steps(s) performed by the tool, the controller may communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, the main computer, another controller, or tools used for material handling to load and unload wafer containers between tool locations and / or load ports within the semiconductor manufacturing plant. The present invention can also be realized in the following embodiments, for example. Application Example 1: It is a system, A plurality of spindle arms positioned above a plurality of stations within a processing chamber for transporting semiconductor substrates between the stations, wherein the spindle arms remain within the processing chamber while the semiconductor substrates are being processed. A plurality of first gas lines located below the station to supply purge gas, A system comprising: a plurality of second gas lines extending upward from the plurality of first gas lines, for supplying the purge gas to the spindle arm while the semiconductor substrate is being processed in the processing chamber. Application example 2: A system of Application Example 1, further comprising a channel located near the top of each of the stations, the channel being in fluid communication with a second gas line of one of the plurality of second gas lines, and including an outlet for supplying the purge gas to one of the plurality of spindle arms. Application Example 3: A system of application example 2, further comprising a connection assembly for connecting the channel to one of the plurality of second gas lines. Application Example 4: A system according to Application Example 3, wherein the connection assembly comprises an orifice for controlling the flow of the purge gas into the channel. Application Example 5: A system of Application Example 1, further comprising a channel located near the top of each of the stations, the channel being in fluid communication with a second gas line of one of the plurality of second gas lines, and including an outlet near each end of the channel, supplying the purge gas to two spindle arms of the plurality of spindle arms located on each side of the channel. Application example 6: A system of application example 2, further comprising a liner lining the upper part of each of the stations, wherein the liner includes the channel. Application example 7: A system according to Application Example 1, wherein the plurality of second gas lines are arranged around the station. Application Example 8: A system according to Application Example 1, further comprising a supply source that supplies the purge gas to the plurality of first gas lines via a regulator that adjusts the flow rate of the purge gas to the plurality of first gas lines. Application example 9: The system of Application Example 1, Control the process running on the semiconductor substrate, During the process, the plurality of spindle arms are controlled to transfer the semiconductor substrate between the stations. A system further comprising a controller for controlling the flow rate of the purge gas supplied to the plurality of first gas lines. Application Example 10: A system according to Application Example 1, further comprising a spindle located at the center of the processing chamber, which moves the plurality of spindle arms laterally across the stations arranged around the center. Application Example 11: It is a system, A plurality of gas lines arranged in a plane around the base portion of N stations, wherein the N stations are arranged around the center of a processing chamber for processing semiconductor substrates, and N is an integer greater than 2, and the plurality of gas lines N liners lining the upper outer edge of each of the N stations, each of the N liners including a channel extending outward from the outer edge parallel to the plane and in fluid communication with the plurality of gas lines, the channel being arranged along the outer edge and having a closed first end and a second end close to the center of the processing chamber, each of the first end and the second end including an outlet to distribute the gas laterally away from the outer edge, N spindle arms for transferring the semiconductor substrate between the N stations, each of the N spindle arms extending laterally parallel to the plane from the spindle at the center of the processing chamber, positioned between two adjacent liners of the N liners, and including a region that contacts the semiconductor substrate during transfer, the region being close to the exit of the channel of the two adjacent liners of the N liners, A system comprising N vertical gas lines, each of which is arranged around the N stations, wherein each of the N vertical gas lines is in fluid communication with the plurality of gas lines and the channels of the N liners. Application Example 12: A system of application example 11, wherein each of the N vertical gas lines is connected to a corresponding channel via an inlet to a corresponding liner among the N liners, the inlet having an orifice that is in fluid communication with the corresponding channel. Application Example 13: The system of application example 12, wherein the inlet is A connection to one of the N vertical gas lines, An O-ring surrounding the orifice of the inlet, the O-ring connecting the orifice to the corresponding Channel, A system comprising: a plurality of notches for aligning the inlet with the corresponding liner among the N liners. Application Example 14: The system in application example 11, Each of the channels includes a plurality of outlets, A system in which each of the N spindle arms that contact the semiconductor substrate is close to the plurality of exits of the channels of the two corresponding adjacent liners among the N liners. Application Example 15: The system of application example 11, wherein the plurality of gas lines are interconnected using connection assemblies, and each of the connection assemblies is A first portion connected to the first gas line among the plurality of gas lines, A second portion connected to the second gas line among the aforementioned plurality of gas lines, An O-ring connecting the first part and the second part, The O-ring comprises a plurality of bent screws arranged around it and fastening the first and second portions together, A system in which the first gas line and the second gas line are in fluid communication through the first and second parts. Application Example 16: A system of application example 11, wherein each of the N vertical gas lines is positioned away from the vertical movement path of the semiconductor substrate at each of the N stations. Application Example 17: The system of application example 11, wherein the plurality of gas lines are connected to the gas supply source located outside the processing chamber, and the system is A system further comprising a pressure regulator located outside the processing chamber, for adjusting the flow rate of the gas supplied from the supply source to the plurality of gas lines. Application Example 18: A system of application example 11, wherein the outlets of the channels of the N liners output the gas to the region of the N spindle arms during processing of the semiconductor substrate. Application Example 19: A system of application example 11, wherein the outlets of the channels of the N liners output the gas to the region of the N spindle arms, and the gas prevents or reduces the deposition of material on the region of the N spindle arms during processing of the semiconductor substrate. Application Example 20: The system in application example 11, Equipped with an additional controller, The aforementioned controller, Control the process running on the semiconductor substrate, During the process, the N spindle arms are controlled to transfer the semiconductor substrate between the N stations. Control the flow rate of the purge gas supplied to the aforementioned multiple gas lines. A system wherein the outlets of the channels of the N liners output the gas to the region of the N spindle arms to prevent or reduce the deposition of material used in the process on the region of the N spindle arms.

Claims

1. It is a system, Multiple gas lines arranged in a plane around the base portion of multiple stations, wherein the multiple stations are arranged around the center of a processing chamber for processing substrates, A plurality of liners lining the upper outer edge of each of the plurality of stations, each of the plurality of liners including a channel extending outward from the outer edge parallel to the plane and in fluid communication with the plurality of gas lines, the channel being arranged along the outer edge and having a closed first end and a second end close to the center of the processing chamber, each of the first end and the second end including an outlet, distributing the gas so as to move laterally away from the outer edge, A plurality of arms for transferring the substrate between the plurality of stations, each of the plurality of arms extending laterally parallel to the plane from a spindle at the center of the processing chamber, positioned between two adjacent liners of the plurality of liners, and including a region that contacts the substrate during transfer, the region being close to the exit of the channel of the two adjacent liners of the plurality of liners, A system comprising a plurality of gas lines, each arranged vertically around the plurality of stations, wherein each of the plurality of gas lines is in fluid communication with the plurality of gas lines and the channels of the plurality of liners.

2. The system according to claim 1, wherein each of the plurality of gas lines is connected to a corresponding channel via an inlet to a corresponding liner among the plurality of liners, the inlet having an orifice that is in fluid communication with the corresponding channel.

3. The system according to claim 2, wherein the inlet is A connection point to one of the corresponding gas lines among the plurality of gas lines, An O-ring surrounding the orifice of the inlet, the O-ring connecting the orifice to the corresponding channel, A system including a plurality of notches for aligning the inlet with the corresponding liner among the plurality of liners.

4. The system according to claim 1, Each of the channels includes a plurality of outlets, A system in which each of the multiple arms that contact the substrate is close to the multiple exits of the channels of the two adjacent liners of the multiple liners.

5. The system according to claim 1, wherein the plurality of gas lines are interconnected using connection assemblies, each of the connection assemblies is A first portion connected to the first gas line among the plurality of gas lines, A second portion connected to the second gas line among the plurality of gas lines, An O-ring connecting the first part and the second part, Includes a plurality of screws arranged around the O-ring and fastening the first portion and the second portion, A system in which the first gas line and the second gas line are in fluid communication through the first and second parts.

6. The system according to claim 1, wherein each of the plurality of gas lines is positioned away from the movement path of the substrate in each of the plurality of stations.

7. The system according to claim 1, wherein the plurality of gas lines are connected to the gas supply source located outside the processing chamber, and the system is A system further comprising a regulator located outside the processing chamber, for adjusting the flow rate of the gas supplied from the supply source to the plurality of gas lines.

8. A system according to claim 1, wherein the outlets of the channels of the plurality of liners output the gas to the regions of the plurality of arms during processing of the substrate.

9. A system according to claim 1, wherein the outlets of the channels of the plurality of liners output the gas to the region of the plurality of arms, the gas preventing or reducing the deposition of material on the region of the plurality of arms during processing of the substrate.

10. The system according to claim 1, Equipped with an additional controller, The aforementioned controller, Control the process running on the aforementioned substrate, During the process, the plurality of arms are controlled to transfer the substrate between the plurality of stations. Control the flow rate of the purge gas supplied to the aforementioned multiple gas lines. A system wherein the outlets of the channels of the plurality of liners output the gas to the region of the plurality of arms to prevent or reduce the deposition of material used in the process on the region of the plurality of arms.

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