Light-emitting element, method for manufacturing the same, and manufacturing apparatus.

Abstract

In the present invention, a light-emitting element comprises: a light-emitting body that includes a first-type semiconductor unit that has a first side surface and a first-type electrical conductivity, an active part positioned below the first-type semiconductor unit, and a second-type semiconductor unit that has a second-type electrical conductivity and is disposed to reach the side of the first type semiconductor unit from below the active part; (ii) an electrically conductive bonding member; and (iii) a support that is positioned below the light-emitting body, and that supports the light-emitting body with the electrically conductive bonding material interposed therebetween so that the first-type semiconductor unit is positioned above the active part.

Description

[Technical Field]

[0001] This disclosure relates to light-emitting elements, etc. [Background technology]

[0002] Generally, light-emitting elements such as light-emitting diodes are manufactured by mounting individual light-emitting elements (sometimes called dies) onto a support such as a substrate. For example, a mounting method is known in which electrodes on the surface side of a light-emitting element formed by stacking semiconductor layers on a growth substrate are joined to electrodes on the support via a conductive bonding material such as solder (so-called flip-chip bonding) (see Patent Document 1). Such a mounting method is also called "junction-down mounting". [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2012-151182 [Overview of the project]

[0004] A light-emitting element in one aspect of the present disclosure includes a light-emitting element comprising: a first type semiconductor portion having a first side surface and having first type conductivity; an active portion located below the first type semiconductor portion; and a second type semiconductor portion having second type conductivity and arranged to extend from below the active portion to the side of the first type semiconductor portion; a conductive bonding material; and a support located below the light-emitting element and supporting the light-emitting element via the conductive bonding material such that the first type semiconductor portion is located above the active portion.

[0005] Furthermore, a method for manufacturing a light-emitting element according to one aspect of the present disclosure includes the steps of: preparing a semiconductor substrate on which a first type semiconductor portion having a first side surface is formed on a base substrate; forming an active portion above the first type semiconductor portion; forming a second type semiconductor portion arranged from above the active portion to the side of the first type semiconductor portion; preparing a support substrate; and bonding a light-emitting element including at least a portion of the first type semiconductor portion, the active portion, and the second type semiconductor portion to the support substrate via a conductive bonding material such that the first type semiconductor portion is positioned above the active portion.

[0006] Furthermore, a method for manufacturing a light-emitting element according to one aspect of the present disclosure includes the steps of: preparing a semiconductor substrate on which a first-type semiconductor portion, an active portion, and a second-type semiconductor portion are formed in that order on a base substrate; forming an insulating film on at least one side surface of the first-type semiconductor portion, the active portion, and the second-type semiconductor portion; preparing a support substrate; and bonding a light-emitting element including at least a portion of the first-type semiconductor portion, the active portion, and the second-type semiconductor portion to the support substrate via a conductive bonding material such that the first-type semiconductor portion is positioned above the active portion. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic cross-sectional view showing the configuration of a light-emitting element in one embodiment of the present disclosure. [Figure 2] This is a schematic perspective view illustrating an example of a process for junction-down mounting a light-emitting element onto a support. [Figure 3] This is a cross-sectional view showing an example of a method for manufacturing a light-emitting element in one embodiment of the present disclosure. [Figure 4] This is a schematic plan view illustrating an example of a method for manufacturing a light-emitting element in one embodiment of the present disclosure. [Figure 5] This flowchart shows an example of a method for manufacturing a light-emitting element in one embodiment of the present disclosure. [Figure 6] This is a block diagram showing an example of a manufacturing apparatus for a light-emitting element in one embodiment of the present disclosure. [Figure 7A] Cross-sectional view showing a light-emitting element in another configuration example of an embodiment of the present disclosure. [Figure 7B] Cross-sectional view showing a light-emitting element in another configuration example of an embodiment of the present disclosure. [Figure 7C] Cross-sectional view showing a light-emitting element in another configuration example of an embodiment of the present disclosure. [Figure 8] Perspective view showing the configuration of the light emitter in Example 1. [Figure 9] Perspective view showing the configuration of the optical resonator. [Figure 10A] Planar view showing the configuration of the active part. [Figure 10B] Planar view showing the configuration of the active part. [Figure 11] Cross-sectional view showing the configuration of the light emitter in Example 1. [Figure 12] Flowchart schematically showing the manufacturing method of the light-emitting element in Example 1. [Figure 13] Planar view schematically showing the manufacturing method of the light emitter included in the light-emitting element in Example 1. [Figure 14] Cross-sectional view schematically showing the manufacturing method of the light-emitting element in Example 1. [Figure 15] Cross-sectional view schematically showing the manufacturing method of the light-emitting element in Example 1. [Figure 16] Cross-sectional view showing a configuration example of the template substrate. [Figure 17] Planar view showing an example of the configuration of the support substrate. [Figure 18] Perspective view schematically showing the light-emitting substrate in a state where a plurality of light emitters are joined to the support substrate. [Figure 19] Perspective view showing an example of the bar-shaped light-emitting substrate after division. [Figure 20] Perspective view showing the configuration of the light-emitting element in Example 1. [Figure 21] Cross-sectional view showing the configuration of the light-emitting element in Example 1. [Figure 22]It is a perspective view showing the configuration of the light-emitting element in another example of Example 1. [Figure 23] It is a cross-sectional view showing the configuration of the light-emitting element in another example of Example 1. [Figure 24] It is a cross-sectional view schematically showing the manufacturing method of the light-emitting element in another example of Example 1. [Figure 25] It is a flowchart schematically showing the manufacturing method of the light-emitting element in Example 2. [Figure 26] [[ID=​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​ [Modes for carrying out the invention]

[0008] The embodiments of this disclosure will be described below with reference to the drawings. The following description is intended to provide a better understanding of the intent of this disclosure and does not limit it unless otherwise specified. Unless otherwise specified in this specification, "A to B" representing a numerical range means "A or greater and B or less." Furthermore, the shapes and dimensions (length, width, etc.) of the components shown in each drawing in this application do not necessarily reflect the actual shapes and dimensions, but have been modified as appropriate for clarity and simplification of the drawings. In other words, the sizes of each component may be exaggerated in the drawings.

[0009] [Light-emitting element] Figure 1 is a schematic cross-sectional view showing the configuration of a light-emitting element in one embodiment of the present disclosure. As shown in Figure 1, the light-emitting element 30 in this embodiment comprises a light-emitting body 20, a conductive bonding material (conductive bonding material) CA, and a support ST (e.g., a submount) that supports the light-emitting body 20 via the bonding material CA.

[0010] The light-emitting element 20 includes (i) a first-type semiconductor portion S1 having a first side surface FS and first-type conductivity, (ii) an active portion AP located below the first-type semiconductor portion S1, and (iii) a second-type semiconductor portion S2 having second-type conductivity and arranged to extend from below the active portion AP to the side of the first-type semiconductor portion S1. Here, the direction from the light-emitting element 20 to the support ST is defined as downward (negative side in the Z1 axis direction). The support ST is located below the light-emitting element 20 and supports the light-emitting element 20 via a bonding material CA such that the first-type semiconductor portion S1 is located above the active portion AP.

[0011] The first type semiconductor part S1 may be a first type semiconductor layer, the second type semiconductor part S2 may be a second type semiconductor layer, and the active part AP may be an active layer. The light-emitting body 20 may be, for example, a semiconductor laser diode (end-face emitting or surface emitting laser diode), or it may be a light-emitting diode. The first type semiconductor part S1 may have n-type conductivity, and the second type semiconductor part S2 may have p-type conductivity. However, it is not limited to this, and the first type semiconductor part S1 may have p-type conductivity and the second type semiconductor part S2 may have n-type conductivity.

[0012] The first type semiconductor section S1 and the second type semiconductor section S2 may include a nitride semiconductor (for example, a GaN-based semiconductor). A nitride semiconductor can be represented as AlxGayInzN (0≦x≦1;0≦y≦1;0≦z≦1;x+y+z=1), and specific examples include GaN-based semiconductors, AlN (aluminum nitride), InAlN (indium aluminum nitride), and InN (indium nitride). A GaN-based semiconductor is a semiconductor containing gallium atoms (Ga) and nitrogen atoms (N), and typical examples include GaN, AlGaN, AlGaInN, and InGaN.

[0013] The first type semiconductor portion S1 may include an undoped (i-type) semiconductor portion. The first type semiconductor portion S1 may include a doped semiconductor portion. The portion of the first type semiconductor portion S1 that is in contact with the active portion AP may be an n-type semiconductor portion including a donor. The second type semiconductor portion S2 may include an undoped (i-type) semiconductor portion. For example, the portion of the second type semiconductor portion S2 that is in contact with the active portion AP may be an undoped (i-type) semiconductor portion.

[0014] The direction in which the first-type semiconductor portion S1, the active portion AP, and the second-type semiconductor portion S2 of the light-emitting body 20 are stacked between the first-type semiconductor portion S1 and the support ST is defined as the Z1 axis direction. The thickness of the first-type semiconductor portion S1 in the Z1 axis direction is greater than the thickness of the second-type semiconductor portion S2 in the Z1 axis direction. The first-type semiconductor portion S1 may include a crystal growth substrate, in which case the thickness of the first-type semiconductor portion S1 in the Z1 axis direction is significantly greater than the thickness of the second-type semiconductor portion S2 in the Z1 axis direction.

[0015] In the light-emitting element 30 of this embodiment, the light-emitting element 20 (die) having a double-sided electrode structure is mounted on a support ST (mounting substrate, etc.) using junction-down mounting (face-down mounting). Junction-down mounting is a method of mounting the light-emitting element 20 on the support ST such that the active part AP is located between the support ST and the first type semiconductor part S1. Generally, junction-down mounting has the advantage of improving heat dissipation. This is because the active part AP, which is considered to be a heat-generating part, can be brought closer to the support ST, which also functions as a heat dissipation member.

[0016] The light-emitting element 20 may have a first electrode E1 located below the second type semiconductor part S2 and a second electrode E2 located above the first type semiconductor part S1. The support ST may have a substrate part BP and a first pad part P1 and a second pad part P2 located above the substrate part BP. The substrate part BP may be the main body part of the support ST (e.g., a substrate). The first pad part P1 and the first electrode E1 may be electrically connected to each other via a bonding material CA. The second pad part P2 and the second electrode E2 may be electrically connected to each other by a wire or a conductive film, etc. (not shown).

[0017] The first side surface FS of the first type semiconductor portion S1 may be one of two side surfaces facing each other in the width direction (X-axis direction) of the first type semiconductor portion S1. The width direction (X-axis direction) of the first type semiconductor portion S1 may be the a-axis direction of the nitride semiconductor crystal. If the light-emitting body 20 has a double-sided electrode structure, the first side surface FS may be the side of the first type semiconductor portion S1 that is furthest from the second pad portion P2 from the two side surfaces facing each other in the X-axis direction. The second type semiconductor portion S2 may be thinner than the first type semiconductor portion S1. At least a portion of the second type semiconductor portion S2 may be in contact with the first side surface FS.

[0018] The bonding material CA may be fluid and may move upstream along the second type semiconductor portion S2 located to the side of the first side surface FS. The light-emitting element 30 is not limited to the example shown in Figure 1, and the bonding material CA may not move upstream along the second type semiconductor portion S2.

[0019] The end of the bonding material CA that extends along the second type semiconductor section S2 on the positive side (farthest from the support ST) in the Z1 axis direction is referred to as EP1. In a cross-section perpendicular to the Y axis direction as shown in Figure 1, the endpoint on the first side surface FS on the lower side (negative side in the Z1 axis direction) of the second type semiconductor section S2 is referred to as EP2. With respect to the position of the end EP2 in the Z1 axis direction, the position of the end EP1 above the end EP2 is referred to as the extension height H1 of the bonding material CA.

[0020] In the light-emitting element 30 of this embodiment, the rise height H1 may exceed the lower surface level LV of the first type semiconductor portion S1. The lower surface level LV corresponds to the position of the boundary between the first type semiconductor portion S1 and the active portion AP in the Z1 axis direction.

[0021] Viewing the light-emitting element 30 along the Z1 axis direction, which corresponds to the stacking direction of the first semiconductor part S1 and the active part AP, can be called a "plan view." In the plan view, the two ends of the bonding material CA in the width direction (X axis direction) of the light-emitting element 20 are defined as edge ED1 and edge ED2, respectively. Edge ED1 is the end of the bonding material CA on the first side surface FS side. In the plan view, at least a part of either edge ED1 or edge ED2 of the light-emitting element 30 may protrude from the light-emitting element 20. In this embodiment, the width W2 of the bonding material CA, which is the distance between edge ED1 and edge ED2 in the X axis direction, may be greater than the width W1 of the light-emitting element 20 in the X axis direction.

[0022] The light-emitting element 30 in this embodiment will be described in more detail below, along with a general overview of the findings of this disclosure.

[0023] Generally, an end-emitting laser diode (hereinafter referred to as a laser element), which is a type of light-emitting element, may be formed in the following manner. First, various semiconductor layers are stacked on a growth substrate (for example, a substrate containing an n-type semiconductor) to form a ridge structure and electrodes, etc. This creates a laser wafer having a device structure. Then, for example, after polishing and thinning the growth substrate, the laser wafer is cleaved (primary cleavage) to form an elongated rectangular parallelepiped laser bar. Next, after coating the resonator end face of the laser bar, the laser bar is cleaved (secondary cleavage) to divide it. This forms a laser body (light-emitting body). After that, the laser body is mounted on a submount to manufacture a laser element.

[0024] The following can be said about conventional laser elements manufactured by the general methods described above. Using the component names and reference numerals of the light-emitting element 30 of this embodiment, in conventional laser elements, the side surface in the width direction of the laser body is formed by the division (cleavage) of the laser bar. In this case, the first side surface FS of the laser body is exposed. Therefore, if the bonding material CA moves upstream and comes into contact with the first side surface FS, a short circuit may occur between the first type semiconductor part S1 and the first electrode E1. This is even more likely to occur when the laser body is mounted to the support ST using a junction-down mounting method. This is because the distance between the lower surface level LV of the first type semiconductor part S1 and the support ST becomes smaller, and as a result, the upstream height H1 of the bonding material CA is more likely to exceed the lower surface level LV.

[0025] Conventionally, to address the above-mentioned problems, measures such as significantly increasing the width of the laser body compared to the width of the bonding material CA, or narrowing the width of the bonding material CA or the first electrode E1, have been taken. However, when the laser body is miniaturized, the narrower the width of the bonding material CA, the higher the possibility of bonding defects between the laser body and the submount. Therefore, there is a limit to how much the width of the bonding material CA can be narrowed. Furthermore, even if the width of the bonding material CA or the first electrode E1 is narrowed, deformation occurs in the bonding material CA in the direction of the side of the laser body during junction-down mounting. This is because the bonding material CA is pressed and deformed when a load is applied to bond the laser body and the support ST. As a result, there is a possibility that the bonding material CA will travel up the side of the laser body (wrap around the side of the laser body).

[0026] Alternatively, by using a junction-up mounting configuration, the relatively thick thickness of the first type semiconductor section S1 makes it less likely for a pn short circuit to occur even if the bonding material CA travels upstream. However, such measures cannot be applied when junction-down mounting is assumed, as in the light-emitting element 30 of this embodiment.

[0027] Furthermore, it is theoretically possible to form an insulating film to protect the first side surface FS of the conventional laser body after the laser bar has been split. However, it is extremely difficult process-wise to form an insulating film covering the first side surface FS on multiple laser bodies simultaneously without covering the electrodes of the laser body.

[0028] The light-emitting element 30 in this embodiment will be further described below with reference to Figures 2 and 3. Figure 2 is a schematic perspective view illustrating an example of a process for junction-down mounting of a light-emitting element to a support. Figure 3 is a cross-sectional view showing an example of a method for manufacturing the light-emitting element in this embodiment. In Figure 2, the structure of the light-emitting element 20 is simplified for clarity, and the bonding material CA is hatched.

[0029] As shown in Figure 2, the bonding material CA is placed on the first pad portion P1 corresponding to the position on the support ST where the light-emitting element 20 is mounted. The support ST may be a part of the support substrate SK (see Figure 17, etc.), which will be described later. The bonding material CA may be composed of a conductive material having at least one of the following properties: heat-fluid, pressure-curable, thermosetting, and photocurable.

[0030] Before the light-emitting element 20 is bonded, the bonding material CA placed on the first pad portion P1 has a certain thickness (height in the Z1 axis direction). The thickness of the bonding material CA may be greater than the thickness of the second type semiconductor portion S2. For example, the thickness of the bonding material CA may be about 5 μm, and the thickness of the second type semiconductor portion S2 may be about 0.5 μm. The bonding material CA has greater wettability with the first pad portion P1 than with the substrate portion BP. When the light-emitting element 20 is junction-down mounted to the support ST, the bonding material CA spreads over the first pad portion P1.

[0031] The width W1 of the light-emitting element 20 may be, for example, 120 μm or less, 100 μm or less, 80 μm or less, or 60 μm or less. The lower limit of the width W1 of the light-emitting element 20 is not particularly limited, but the width W1 may be, for example, 40 μm or more. The width W3 of the bonding material CA may be, for example, 10 μm or more, from the viewpoint of reducing the possibility of bonding failure. The width W3 of the bonding material CA may be smaller than the width W1, the same as the width W1, or larger than the width W1.

[0032] Before the light-emitting element 20 is bonded to the support ST, the light-emitting element 20 may be held by, for example, a general holding means (such as a collet), or by a growth substrate (see, for example, Figure 3). Two sides of the light-emitting element 20 that face each other in the X-axis direction are referred to as sides 20T1 and 20T2, and the end face of the light-emitting element 20 in the Y-axis direction is referred to as end face 20F. Hereinafter, sides 20T1 and 20T2 may be collectively referred to as sides 20T.

[0033] In the light-emitting element 30, the bonding material CA can travel along the side surface 20T of the light-emitting element 20. In the example shown in Figure 2, the bonding material CA can travel along both the side surface 20T1 and the side surface 20T2. In the light-emitting element 30 of this embodiment, the second type semiconductor part S2 exists between the traveled bonding material CA and the first type semiconductor part S1 (the first side surface FS) (see Figure 1). Therefore, the possibility of a short circuit between the first electrode E1 and the first type semiconductor part S1 via the bonding material CA can be effectively reduced.

[0034] Furthermore, if the light-emitting element 20 is, for example, a semiconductor laser diode, a resonator end face is formed on the end face 20F and is not covered by the second type semiconductor part S2. The light-emitting element 30 may be junction-down mounted on the support ST such that the end face 20F protrudes (juts out) from the first pad part P1 in the Y-axis direction. Because the first pad part P1 is thin, the end face of the first pad part P1 is not shown in Figure 2. The light-emitting element 30 may have a distance L10 from the end face of the first pad part P1 to the end face 20F of the light-emitting element 20 in the Y-axis direction, in which case the possibility of the bonding material CA moving up along the end face 20F can be reduced.

[0035] Furthermore, the light-emitting element 20 may have a side surface 20T2, one of its two sides 20T, that is closer to the second pad portion P2 (negative side in the X-axis direction), which protrudes in the X-axis direction relative to the first pad portion P1. In this case, the possibility of the bonding material CA moving upstream along side surface 20T2 can be reduced. On the other hand, the bonding material CA can move upstream along side surface 20T1.

[0036] The bonding material CA may be fluid and is typically solder. The bonding material CA may be, for example, a solder pump, or a thin solder film formed by printing, vapor deposition, or sputtering.

[0037] Using a fluid bonding material CA offers several advantages, such as the following. Specifically, as shown in Figure 3, a semiconductor substrate 10 having multiple light-emitting elements 20 and a support substrate SK can be used to simultaneously transfer two or more light-emitting elements 20 onto a single support substrate SK in a single step. As will be explained in detail in the embodiments described later, the semiconductor substrate 10 may have a main substrate 1, a base portion 4, and multiple light-emitting elements 20. In the example shown in Figure 3, at least a portion of the first-type semiconductor portion S1 contained in the light-emitting elements 20 may be formed by the ELO (Epitaxial Lateral Overgrowth) method.

[0038] The height H2 of each light-emitting element 20 is defined as the distance from the boundary between the light-emitting element 20 and the base portion 4 to the surface of the support substrate SK on the first electrode E1 side. Multiple light-emitting elements 20 may have slightly different heights H2. Because the bonding material CA is fluid, even if there are differences in height H2, two or more light-emitting elements 20 can be easily transferred at once to the support substrate SK, separated from the base substrate BK. After transferring the light-emitting elements 20 to the support substrate SK, the base portion BP may be divided. This makes it possible to form a light-emitting element 30 on the support ST with at least one light-emitting element 20 mounted in a junction-down configuration.

[0039] If the bonding material CA is fluid, the controllability of the area where the bonding material CA exists may decrease when the light-emitting element 20 and the support substrate SK are brought close to each other and a load is applied. When the width W1 of the light-emitting element 20 is small, the bonding material CA tends to move up the side surface 20T of the light-emitting element 20. Narrowing the width W3 of the bonding material CA may reduce the transfer yield due to the decrease in bonding force and the need for higher mounting accuracy (positioning).

[0040] In the light-emitting element 30 of this embodiment, even if the bonding material CA travels up the side surface 20T of the light-emitting element 20, the second type semiconductor part S2 exists between the traveled bonding material CA and the first type semiconductor part S1 (or its first side surface FS) (see Figure 1). Therefore, while ensuring the width W3 of the bonding material CA, the possibility of a short circuit between the first electrode E1 and the first type semiconductor part S1 via the bonding material CA can be effectively reduced.

[0041] Furthermore, in the light-emitting element 30 of this embodiment, the bonding material CA extends along the side surface 20T of the light-emitting element 20 (wraps around the side surface 20T), which provides the following advantages. Specifically, the bonding strength between the support substrate SK and the light-emitting element 20 via the bonding material CA can be improved, and the light-emitting element 20 can be held down by the bonding material CA. When the bonding material CA contacts a part of the side surface 20T, thereby partially embracing (holding) the light-emitting element 20, the bonding strength between the support substrate SK and the light-emitting element 20 is improved. As a result, when separating the light-emitting element 20 from the base substrate BK, the bonding material CA and the light-emitting element 20 are difficult to separate, and therefore, the light-emitting element 20 can be easily separated from the base substrate BK. In addition, the heat dissipation of the light-emitting element 20 can be easily improved. The above effects become even more pronounced when the extension height H1 of the bonding material CA exceeds the lower surface level LV of the first type semiconductor part S1.

[0042] [Method for manufacturing light-emitting elements] Figure 4 is a schematic plan view showing an example of a method for manufacturing a light-emitting element in this embodiment. Figure 5 is a flowchart showing an example of a method for manufacturing a light-emitting element in this embodiment. In the example shown in Figure 4, the light-emitting element 20 may be a laser body having a double-sided electrode structure. Other methods for manufacturing the light-emitting element 20 will be described later as examples. In Figure 4, for the sake of clarity, each component in the plan view is given the same hatching as each component in the cross-sectional view shown in Figure 1, etc.

[0043] As shown in Figures 4 and 5, the method for manufacturing the light-emitting element 30 in this embodiment includes the steps of: preparing a semiconductor substrate 10 on which a first type semiconductor portion S1 having a first side surface FS is formed on a base substrate BK; forming an active portion AP above the first type semiconductor portion S1; and forming a second type semiconductor portion S2 arranged from above the active portion AP to the side of the first type semiconductor portion S1.

[0044] In Figure 4, layers such as the first type semiconductor section S1 are stacked on the base substrate BK, with the stacking direction being upward (positive side in the Z2 axis direction). The Z2 axis may be oriented inversely to the Z1 axis as described in Figure 1, etc. For example, when performing junction-down mounting as shown in Figure 3, the top and bottom of the semiconductor substrate 10 are inverted with respect to the support substrate SK. Corresponding to this, in the following descriptions in this specification, the XY-Z1 axis and the XY-Z2 axis may be used interchangeably depending on the subject of the description. The positive and negative directions of the XYZ axes do not necessarily have essential meaning, but for the sake of explanation, in this specification, the X axis is used as the axis of rotation to invert the semiconductor substrate 10 and perform junction-down mounting on the support substrate SK, and the X and Y axes are used in common.

[0045] The semiconductor substrate 10 may have a plurality of bar-shaped first-type semiconductor portions S1 arranged in a line along the X-axis. The first-type semiconductor portions S1 may have a longitudinal shape with the Y-axis as the longitudinal direction. The first-type semiconductor portions S1 may include a lateral growth portion formed by the ELO method and a longitudinal growth portion (regrowth portion) formed above the lateral growth portion by general epitaxial growth.

[0046] The semiconductor substrate 10 may have a gap GP between adjacent first-type semiconductor portions S1. By forming the second-type semiconductor portion S2 so as to fit into the gap GP, the second-type semiconductor portion S2 can be formed to cover at least a portion of the first side surface FS.

[0047] The gap GP may be a space formed by stopping lateral growth before adjacent crystals growing by the ELO method associate with each other, when forming at least a portion of the first type semiconductor portion S1 by the ELO method. Alternatively, the gap GP may be a trench formed by etching the plate-shaped first type semiconductor portion S1. The base substrate BK may be a growth substrate used to form the first type semiconductor portion S1. The base substrate BK should be such that the light-emitting element 20 can be separated from the light-emitting element 20 when transferring it to the support substrate SK. For example, the base substrate BK may include a Si substrate or a SiC substrate and a seed layer (e.g., a GaN-based semiconductor), or the base substrate BK may be a GaN-based self-supporting substrate (single crystal substrate).

[0048] The first type semiconductor portion S1 may have a first side surface FS, which is one of two sides facing each other in the X-axis direction, and a second side surface SS, which is the other side surface. The first side surface FS and the second side surface SS are sides of the first type semiconductor portion S1 at the time of formation and may be composed of crystal planes of the nitride semiconductor. In this specification, a plane that occurs naturally due to crystal growth may be referred to as a "crystal plane," and a plane that is formed by processing such as etching may be referred to as a "processed plane." A plane that is created by crystal cleavage may be referred to as a "cleavage plane."

[0049] The second type semiconductor section S2 is arranged so as to extend from above the active section AP to the side of the first side surface FS in the first type semiconductor section S1, and may also be arranged so as to extend from above the active section AP to the side of the second side surface SS in the first type semiconductor section S1.

[0050] If the light-emitting body 20 is a laser body, a ridge portion (not shown) may be formed on the second semiconductor portion S2, and the first electrode E1 may be formed so as to overlap with the ridge portion in a plan view. In this specification, "two members overlapping" means that in a plan view (including a perspective plan view) viewed in the thickness direction of each member, at least a part of one member overlaps with the other member, and these members may or may not be in contact with each other.

[0051] The first electrode E1 may have a contact electrode and an auxiliary electrode (sometimes called a pad electrode). Multiple first electrodes E1 may be formed above the second type semiconductor portion S2, aligned in the Y-axis direction. Multiple open grooves GS are formed in the longitudinal laminate LB, which includes the first type semiconductor portion S1, the active portion AP, the second type semiconductor portion S2, and the first electrode E1. This divides the laminate LB into multiple light-emitting elements 20. The open grooves GS may be gap spaces formed by cleavage of the laminate LB, or gap spaces formed by etching the laminate LB.

[0052] The manufacturing method for the light-emitting element 30 in this embodiment further includes the steps of preparing a support substrate SK and bonding the light-emitting element 20, which includes at least a portion of the first type semiconductor portion S1, the active portion AP, and the second type semiconductor portion S2, to the support substrate SK via a bonding material (conductive bonding material) CA such that the first type semiconductor portion S1 is located above the active portion AP. These steps can be understood by referring to the above description and Figure 3, etc., so a repeated explanation will be omitted. If the light-emitting element 20 has a double-sided electrode structure, after transferring the light-emitting element 20 to the support substrate SK, a second electrode E2 that is electrically connected to the first type semiconductor portion S1 can be formed on the side of the light-emitting element 20 opposite to the side on which the first electrode E1 is provided. Thereafter, the second electrode E2 and the second pad portion P2 can be electrically connected using a conductive film or the like.

[0053] [Manufacturing equipment] Figure 6 is a block diagram showing an example of a manufacturing apparatus for a light-emitting element in this embodiment. The manufacturing apparatus 40 in Figure 6 may include an apparatus 40A for preparing the semiconductor substrate 10, an apparatus 40B for forming the active part AP, an apparatus 40C for forming the second type semiconductor part S2, an apparatus 40D for preparing the support substrate SK, an apparatus 40E for bonding the light-emitting element 20 to the support substrate SK, and an apparatus 40F for controlling apparatuses 40A to 40E. Furthermore, the manufacturing apparatus 40 may appropriately include apparatus for performing various specific processes that will be described in the embodiments described later.

[0054] For example, MOCVD (Metal-Organic Chemical Vapor Deposition) equipment can be used for apparatus 40B and apparatus 40C. The manufacturing apparatus 40 may be a sputtering apparatus or a photolithography apparatus as appropriate.

[0055] Device 40F may include a processor and memory. Device 40F may also be configured to control devices 40A to 40E by executing programs stored, for example, in internal memory, a communicable communication device, or on an accessible network.

[0056] When using a pre-prepared semiconductor substrate 10, the manufacturing apparatus 40 does not need to include apparatus 40A. When using a pre-prepared support substrate SK, the manufacturing apparatus 40 does not need to include apparatus 40D.

[0057] [Another configuration example] Figure 7A is a cross-sectional view showing a light-emitting element in another configuration example of one embodiment of the present disclosure. As shown in Figure 7A, in the light-emitting element 30, the active portion AP may be arranged from below the first type semiconductor portion S1 to the side of the first type semiconductor portion S1. Alternatively, in the light-emitting element 30, the active portion AP may be arranged from below the first type semiconductor portion S1 to the side of the first side surface FS and the side of the second side surface SS of the first type semiconductor portion S1. Because the film thickness of the active portion AP is very thin, the thickness of the active portion AP is exaggerated in Figure 7A.

[0058] Figure 7B is a cross-sectional view showing a light-emitting element 30 in an alternative configuration of one embodiment of the present disclosure. The light-emitting element 20 may have a ridge portion RJ formed on the second type semiconductor portion S2. The ridge portion RJ may be located in a position that overlaps with the first electrode E1 in a plan view, and the first electrode E1 may include a first contact electrode E11 and a first auxiliary electrode E12. In the light-emitting element 30, insulating films DF may be provided on both sides of the ridge portion RJ, and the insulating films DF may be arranged from below the second type semiconductor portion S2 excluding the ridge portion RJ to the side of the first type semiconductor portion S1. In addition, in the light-emitting element 30, the insulating films DF may be arranged from below the second type semiconductor portion S2 excluding the ridge portion RJ to the side of the first side surface FS and the side of the second side surface SS of the first type semiconductor portion S1. The insulating films DF located on both sides of the ridge portion RJ and the insulating films DF located on the side of the first type semiconductor portion S1 may be formed integrally (continuously) with each other, or they may be formed separately. For example, an insulating film DF (first insulating film) may be formed on both sides of the ridge portion RJ and on the lower surface of the second type semiconductor portion S2, and then an insulating film DF (second insulating film) located to the side of the first type semiconductor portion S1 may be formed.

[0059] The light-emitting element 30 may or may not have a second-type semiconductor portion S2 between the first side surface FS and the insulating film DF. In the example light-emitting element 30 shown in Figure 7B, even if there is no second-type semiconductor portion S2 on the side of the first side surface FS, an insulating film DF exists between the first side surface FS and the bonding material CA. This effectively reduces the possibility of a short circuit between the first electrode E1 and the first-type semiconductor portion S1 via the bonding material CA. The light-emitting element 30 may be, for example, a light-emitting diode, and may not have a ridge portion RJ in the example shown in Figure 7B.

[0060] Figure 7C is a cross-sectional view showing a light-emitting element 30 in an alternative configuration example of one embodiment of the present disclosure. The second type semiconductor portion S2 only needs to be arranged from below the active portion AP to the side of the first type semiconductor portion S1, and may be located across the entire surface of the first side surface FS on the side of the first type semiconductor portion S1 (see Figure 1), or it may be located so as to cover a part of the first side surface FS. In other words, there may be a portion of the first side surface FS on its side where the second type semiconductor portion S2 is not located, for example, a part of the first side surface FS may be exposed. In a cross-section perpendicular to the Y-axis direction as shown in Figure 7C, the height in the Z1 axis direction of the second type semiconductor portion S2 located on the side of the first type semiconductor portion S1 is referred to as the formation height H3. The upper end in the Z1 axis direction of the second type semiconductor portion S2 located on the side of the first type semiconductor portion S1 is referred to as EP3, and the formation height H3 is the height position of the end EP3 that is above the lower end EP2 of the second type semiconductor portion S2 in the Z1 axis direction, with reference to the position of the lower end EP2 of the second type semiconductor portion S2.

[0061] In this embodiment, the second type semiconductor portion S2 extends from below the active portion AP to the side of the first type semiconductor portion S1. That is, the second type semiconductor portion S2 is located below the active portion AP and to the side of at least a portion of the first side surface FS. The second type semiconductor portion S2 may also be continuous from below the active portion AP to the end portion EP3.

[0062] In the light-emitting element 30, the size of the formation height H3 may be smaller than the sum T1 of the thicknesses of the first type semiconductor part S1, the active part AP, and the second type semiconductor part S2 in the Z1 axis direction. In the light-emitting element 30, the position reached by the wrap-around portion of the second type semiconductor part S2 (position of end EP3) is above the upstream position of the bonding material CA (position of end EP1). For example, in the light-emitting element 30, in a cross-section perpendicular to the Y axis direction as shown in Figure 7C, the position of end EP3 may be above the center of the first side surface FS and above one-quarter of the height of the first side surface FS. In the light-emitting element 30, the formation height H3 of the second type semiconductor part S2 is larger than the upstream height H1 of the bonding material CA, which effectively reduces the possibility of a short circuit between the first electrode E1 and the first type semiconductor part S1 via the bonding material CA. In the example shown in Figure 7C, the side of the first side surface FS of the light-emitting element 30 may be covered with an insulating film DF (see Figure 7B). The configuration of the light-emitting element 30 on the second side surface SS (the arrangement of each part) may be the same as that described above for the first side surface FS.

[0063] [Example 1] Hereinafter, one embodiment of the present disclosure will be described in detail. In the following description, the same or corresponding parts of each configuration of the multiple embodiments of the present disclosure will be denoted by the same reference numerals in the figures. Unless otherwise specified, the technical scope of the present disclosure also includes forms obtained by appropriately combining the technical means disclosed in the above-described embodiment and the different embodiments described later.

[0064] Example 1 describes an example where the light-emitting body 20 is a laser body (semiconductor laser chip) having a single-sided two-electrode structure, and the light-emitting element 30 is a laser element. In order to simplify the explanation, the configuration of the light-emitting body 20 will be described first, and then the light-emitting element 30 will be described along with its manufacturing method.

[0065] (Luminous object) Figure 8 is a perspective view showing the configuration of the light-emitting element in Example 1. Figure 9 is a perspective view showing the configuration of the optical resonator. Figures 10A and 10B are plan views showing the configuration of the active section. Figure 11 is a cross-sectional view showing the configuration of the light-emitting element in Example 1.

[0066] As shown in Figures 8 to 11, the light-emitting element 20 in Example 1 may include a first-type semiconductor section S1, an active section AP located above the first-type semiconductor section S1, and a second-type semiconductor section S2 arranged from above the active section AP to the side of the first-type semiconductor section S1. The second-type semiconductor section S2 may cover at least a portion of the first side surface FS of the first-type semiconductor section S1.

[0067] The first type semiconductor part S1, the active part AP, and the second type semiconductor part S2 may each contain a nitride semiconductor (e.g., a GaN-based semiconductor). In Figure 8, etc., the X direction is the <11-20> direction (a-axis direction) of the nitride semiconductor crystal (wurtzite-type structure), the Y direction is the <1-100> direction (m-axis direction) of the nitride semiconductor crystal, and the Z2 direction is the nitride semiconductor crystal <0001> The direction is (c-axis direction). The first type semiconductor part S1 has a first side surface FS, which is one of two sides facing each other in the a-axis direction, and a second side surface SS, which is the other side surface. The second type semiconductor part S2 is arranged from above the active part AP to the side of the first side surface FS and the side of the second side surface SS in the first type semiconductor part S1.

[0068] The light-emitting body 20 is a laser body having a ridge structure (ridge waveguide structure), and the second type semiconductor portion S2 includes a ridge portion RJ. The light-emitting body 20 has an optical resonator LK that includes at least a portion of the first type semiconductor portion S1, the active portion AP, and the second type semiconductor portion S2, and includes a pair of resonator end faces F1 and F2. The first side surface FS of the first type semiconductor portion S1 is closer to the ridge portion RJ than the second side surface of the first type semiconductor portion S1 which is located on the opposite side of the first side surface FS.

[0069] The light-emitting element 20 may include a first electrode E1 which is the anode and a second electrode E2 which is the cathode. The first electrode E1 may include a first contact electrode E11 and a first auxiliary electrode E12. Although not shown in the figure, the second electrode E2 may include a second contact electrode and a second auxiliary electrode.

[0070] The first type semiconductor portion S1 may include a base semiconductor portion S11 and a first type portion S12. The base semiconductor portion S11 may include a portion formed using the ELO method. The first type portion S12 may be a first type conductive crystalline portion formed above the base semiconductor portion S11, for example by the MOCVD method, after the base semiconductor portion S11 has been formed by the ELO method. The base semiconductor portion S11 and the first type portion S12 may have the same type of conductivity as each other. In Example 1, the first type semiconductor portion S1 includes an n-type semiconductor portion having a donor, and the second type semiconductor portion S2 includes a p-type semiconductor portion having an acceptor.

[0071] The first type semiconductor portion S1 includes a first portion (central portion) B1, and a second portion (wing portion) B2 and a third portion B3, the second and third portions B3 having a lower density of through-dislocations KD extending in the thickness direction (Z2 direction) than the first portion B1. The second portion (wing) B2 is closer to the first side surface FS than the first portion (central portion) B1 in the a-axis direction. The third portion B3, first portion B1, and second portion B2 are arranged in this order in the X direction, and the first portion B1 is located between the third portion B3 and the second portion B2. The first portion B1 is the portion that was located on the opening of the mask when the base semiconductor portion S11 was formed by the ELO method (described later). The through-dislocation density of the second portion B2 and the third portion B3 is 1 / 5 or less of the through-dislocation density of the first portion B1 (for example, 5 × 10⁻¹⁰). 6 / cm 2 The following may apply. Threading dislocations can be observed on the surface or a cross-section parallel to the surface of the first-type semiconductor portion S1 and the second-type semiconductor portion S2, for example, by performing CL (Cathode Luminescence) measurements.

[0072] In the first type semiconductor section S1, the first type section S12 may be formed in the following order from the base semiconductor section S11 upwards: a first contact section S121, a first cladding section S122, and a first optical guide section S123. In the second type semiconductor section S2, the second optical guide section S21, an electron blocking section S22, a second optical cladding section S23, and a second contact section S24 may be formed in the following order from the active section AP upwards. A first contact electrode E11 may be formed on the second contact section S24. Each part included in the first type section S12, the active section AP, and each part included in the second type semiconductor section S2 may be in a layered shape (for example, the active section AP may be an active layer).

[0073] In Example 1, the second electrode E2 is provided on the same side as the first electrode E1 with respect to the first type semiconductor portion S1. The second electrode E2 is in contact with the first type semiconductor portion S1, and the first and second electrodes E1 and E2 do not overlap in a plan view. Specifically, the first type semiconductor portion S1 has a greater width in the X direction than the active portion AP and the second type semiconductor portion S2, and the second electrode E2 may be formed on the exposed portion of the first type semiconductor portion S1. The base semiconductor portion S11 may be exposed by etching or other methods to excavate a part of the first type semiconductor portion S1, the active portion AP, and the second type semiconductor portion S2. Alternatively, the first contact portion S121 of the first type portion S12 may be exposed, in which case the second electrode E2 may be provided so as to be in contact with the first contact portion S121.

[0074] The first electrode E1 has a shape whose longitudinal direction is the direction of the resonator length L1 of the optical resonator LK (Y direction). The length of the first electrode E1 in the Y direction may be smaller than the resonator length L1, in which case the first electrode E1 does not interfere when forming and dividing the open groove GS in the laminate LB (see Figure 4). The same may be true for the second electrode E2, and the length of the second electrode E2 in the Y direction may be smaller than the resonator length L1.

[0075] The optical resonator LK may include portions of the first type section S12, the active section AP, the second optical guide section S21, the electron blocking section S22, and the second optical cladding section S23 that overlap with the first contact electrode E11 in a plan view.

[0076] The resonator length L1, which is the distance between a pair of resonator end faces F1 and F2, may be 200 μm or less, 150 μm or less, or 100 μm or less. The lower limit of the resonator length L1 is not particularly limited, as long as it is a length that allows the optical resonator LK to function, but may be, for example, 50 μm.

[0077] At least one of the pair of resonator end faces F1 and F2 may be included in the end face 20F of the light-emitting body 20 formed by cleaving the laminate LB (see Figure 4). Each of the pair of resonator end faces F1 and F2 may be formed by the m-plane of a nitride semiconductor crystal (e.g., a GaN-based semiconductor crystal).

[0078] After the light-emitting element 20 is transferred to the support substrate SK (see Figure 3), a reflective film UF (e.g., a dielectric film) may be formed to cover each of the resonator end faces F1 and F2. The optical reflectance of the resonator end face F2 on the light-reflecting surface side is greater than the optical reflectance of the resonator end face F1. Although not shown in Figure 8, the reflective film UF can be formed over the entire cleavage plane (m plane) of the first-type semiconductor portion S1 and the second-type semiconductor portion S2.

[0079] In the optical resonator LK, the refractive index (optical refractive index) decreases in the order of the active section AP, the first optical guide section S123, and the first cladding section S122, and also decreases in the order of the active section AP, the second optical guide section S21, and the second optical cladding section S23. Therefore, the light generated when holes supplied from the first electrode E1 and electrons supplied from the second electrode E2 combine in the active section AP is confined within the optical resonator LK (particularly the active section AP), and laser oscillation occurs due to stimulated emission and feedback in the active section AP. The laser light generated by the laser oscillation is emitted from the optical emission region EA of the resonator end face F1 on the emission side.

[0080] The second type semiconductor section S2 includes a ridge section RJ (ridge) that overlaps with the first contact electrode E11 in a plan view, and the ridge section RJ may include a second optical cladding section S23 and a second contact section S24. The ridge section RJ has a shape with the Y direction as its longitudinal direction, and an insulating film DF is provided so as to cover the sides of the ridge section RJ. The X-direction ends of the first contact electrode E11 may overlap with the insulating film DF in a plan view. The first auxiliary electrode E12 may be positioned so as to overlap with the first electrode E1 and the insulating film DF in a plan view. The refractive index of the insulating film DF is smaller than the refractive index of the second optical guide section S21 and the second optical cladding section S23. By providing the ridge section RJ and the insulating film DF, the current path between the first electrode E1 and the first type semiconductor section S1 is narrowed on the anode side, allowing for efficient light emission within the resonator LK.

[0081] In a plan view, the ridge portion RJ overlaps with the second portion B2 (low dislocation portion) of the first semiconductor portion S1, but does not overlap with the first portion B1. In this way, the current path from the first electrode E1 through the second semiconductor portion S2 and the first semiconductor portion S1 to the second electrode E2 is formed in the portion that overlaps with the second portion B2 in a plan view (the portion with few threading dislocations), thereby increasing the luminescence efficiency in the active portion AP. This is because threading dislocations act as non-luminescent recombination centers.

[0082] In Example 1, the light-emitting element 20 has a single-sided two-electrode structure, which means that when junction-down mounting is performed on a support substrate SK (see Figure 3), for example, the size of the bonding portion relative to the width of the bonding material CA becomes relatively small. As a result, in a plan view, the edge ED1 of the bonding material CA tends to protrude from the light-emitting element 20. Consequently, the bonding material CA may easily move up the first side surface FS.

[0083] The raw material for forming the type 2 semiconductor portion S2 enters the gap GP formed between multiple type 1 semiconductor portions S1, thereby forming the type 2 semiconductor portion S2 on the side of the first side surface FS. By changing the deposition conditions and the size of the gap GP, it is possible to easily form the type 2 semiconductor portion S2 on the side of the first side surface FS. The type 2 semiconductor portion S2 on the side of the first side surface FS may be formed simultaneously when forming each part included in the type 2 semiconductor portion S2 on the active portion AP, and may be a multilayer film including layers corresponding to the second optical guide portion S21, electron blocking portion S22, etc.

[0084] In the cross-section shown in Figure 11, the height of the second type semiconductor portion S2 in the Z2 direction is referred to as H10. Height H10 is the distance from the top to the bottom of the second type semiconductor portion S2 in the Z2 direction, in other words, the distance from the boundary between the second contact portion S24 and the first contact electrode E11 to the boundary between the second optical guide portion S21 and the active portion AP. Also, the height of the first type semiconductor portion S1 in the Z2 direction is referred to as H11. The lower surface of the first type semiconductor portion S1 in the Z2 direction, in other words, the surface (back surface) furthest from the active portion AP is referred to as the bottom surface US. Height H11 is the distance from the top to the bottom of the first type semiconductor portion S1 in the Z2 direction, in other words, the distance from the boundary between the first optical guide portion S123 and the active portion AP to the bottom surface US. If the surface of the lower surface US has some irregularities, the position of a virtual plane created by virtually smoothing the surface of the lower surface US can be taken as the position of the lower surface US in the Z2 direction.

[0085] The thickness in the X direction of the second type semiconductor part S2 located to the side of the first side surface FS of the first type part S12 is referred to as the width W11, and the thickness in the X direction of the second type semiconductor part S2 located to the side of the first side surface FS near the bottom surface US of the base semiconductor part S11 is referred to as the width W12. The width W12 may be smaller than the width W11. This is because it becomes more difficult to supply the raw material for film formation of the second type semiconductor part S2 as it approaches the bottom surface US. The "near the bottom surface US" referred to here may be the part whose height from the bottom surface US is 1 / 10 or less of the above height H11.

[0086] The thickness (height H10) of the second type semiconductor portion S2 may be less than the thickness (height H11) of the first type semiconductor portion S1. Since the active portion AP is very thin, it does not need to be formed around the first side surface FS, and in this case, the second type semiconductor portion S2 may be in contact with the first side surface FS. Also, unlike the example shown in Figure 11, the active portion AP may be formed around the first side surface FS.

[0087] The height H10 may be 75% or less of the height H11, or 50% or less. The sum of the thicknesses T1 of the first type semiconductor part S1, the active part AP, and the second type semiconductor part S2 can be 50 μm or less. If this sum of thicknesses T1 is too large, it may become difficult to cleave the resonator so that the resonator length is 200 μm or less.

[0088] The ratio of the resonator length L1 to the thickness (height H11) of the second part B2 of the first type semiconductor part S1 can be 1 to 100. Furthermore, the direction perpendicular to the direction of the resonator length L1 is defined as the first direction (X direction), and the size of the second part B2 in the X direction is defined as the width W13 of the second part B2. The ratio of the resonator length L1 to the width W13 of the second part B2 can be 1 to 100.

[0089] (How to manufacture hibiscus) Figure 12 is a flowchart schematically showing the manufacturing method of the light-emitting element in Example 1. Figure 13 is a plan view schematically showing the manufacturing method of the light-emitting element included in the light-emitting element in Example 1. Figures 14 and 15 are schematic cross-sectional views schematically showing the manufacturing method of the light-emitting element in Example 1. Figure 16 is a cross-sectional view showing an example of the configuration of a template substrate. In Figure 15, the bottommost of the multiple figures shown from top to bottom in line with the processing flow is a side view showing the end face of the light-emitting element 30 for the sake of explanation.

[0090] In the manufacturing method of the light-emitting element of Example 1, as shown in Figures 12 to 15, a semiconductor substrate 10 is first prepared. The semiconductor substrate 10 includes a template substrate 7 and a plurality of bar-shaped base semiconductor portions S11 arranged in the X direction above the template substrate 7. The template substrate 7 has, for example, a base substrate BK and a striped mask 6. The mask 6 is formed above the base substrate BK and has an opening K and a mask portion 5. A semiconductor substrate 10 having a first type semiconductor portion S1 may be prepared by forming a first type portion S12 above the base semiconductor portion S11 on such a semiconductor substrate 10. Alternatively, a semiconductor substrate 10 having a first type semiconductor portion S1 may be prepared by continuously depositing the base semiconductor portion S11 and the first type portion S12 above the template substrate 7.

[0091] The following describes an example in which a semiconductor substrate 10 is prepared by forming a base semiconductor portion S11 on a template substrate 7 using the ELO method, and then forming a first type portion S12, but is not limited to this. The semiconductor substrate 10 can be prepared by performing various processes on the base substrate BK. The specific method for preparing the semiconductor substrate 10 is not particularly limited, and preparing the semiconductor substrate 10 of Example 1 by performing a process on a semi-finished semiconductor substrate 10 in the intermediate stage of semiconductor substrate 10 formation is also within the scope of this disclosure. This is also true in the following examples, although it will not be explained again.

[0092] (Template board) The template substrate 7 has a base substrate BK and a mask 6 located above the base substrate BK. As shown in Figure 16, the template substrate 7 may be configured such that the seed portion 3 and the mask 6 are formed in this order on the main substrate 1, or it may be configured such that a multilayer base portion 4 (including the buffer portion 2 and the seed portion 3) and the mask 6 are formed in this order on the main substrate 1. The seed portion 3 may be formed locally (for example, in a stripe shape) so as to overlap the opening K of the mask 6 in a plan view. The seed portion 3 may contain a nitride semiconductor formed at a low temperature of 600°C or less. This reduces warping of the semiconductor substrate 10 (template substrate 7 and first type semiconductor portion S1) caused by stress in the seed portion 3. The seed portion 3 can also be deposited using a sputtering apparatus (PSD: pulse sputter deposition, PLD: pulse laser deposition, etc.). Using a sputtering apparatus has advantages such as enabling low-temperature deposition and large-area deposition, and cost reduction. As shown in Figure 16, the template substrate 7 may be configured such that a mask 6 is formed on a main substrate 1 (for example, a SiC bulk crystal substrate or a GaN bulk crystal substrate).

[0093] As described above, the base substrate BK may include at least the main substrate 1. The base substrate BK may include the main substrate 1 and a seed portion 3 located above the main substrate 1, and may include the main substrate 1 and a base portion 4 located above the main substrate 1. The main substrate 1 can be a different type of substrate having a different lattice constant from the GaN-based semiconductor. Examples of different types of substrates include single-crystal silicon (Si) substrates, sapphire (Al2O3) substrates, silicon carbide (SiC) substrates, etc. The plane orientation of the main substrate 1 is, for example, the (111) plane of a silicon substrate, the (0001) plane of a sapphire substrate, and the 6H-SiC(0001) plane of a SiC substrate. These are examples, and the main substrate 1 may be any material and plane orientation that allows the first type semiconductor portion S1 to be grown by the ELO method. The main substrate 1 can also be a SiC (bulk crystal) substrate, a GaN (bulk crystal) substrate, or an AlN (bulk crystal) substrate.

[0094] As the base portion 4 in Figure 16, a buffer portion 2 and a seed portion 3 can be provided in order from the main substrate 1 side. For example, if a silicon substrate is used for the main substrate 1 and a GaN-based semiconductor is used for the seed portion 3, the two (main substrate and seed portion) will melt together. Therefore, by providing a buffer portion 2 that includes at least one of an AlN layer and a SiC (silicon carbide) layer, the melting can be reduced. The buffer portion 2 may have at least one of the effects of increasing the crystallinity of the seed portion 3 and relaxing the internal stress of the first type semiconductor portion S1. If a main substrate 1 that does not melt with the seed portion 3 is used, a configuration without a buffer portion 2 is also possible. Note that the configuration is not limited to the seed portion 3 overlapping the entire mask portion 5 as shown in Figure 16. Since the seed portion 3 only needs to be exposed from the opening K, the seed portion 3 may be formed locally so as not to overlap part or all of the mask portion 5.

[0095] The opening K of the mask 6 has the function of a growth initiation hole that exposes the seed portion 3 and initiates the growth of the first type semiconductor portion S1, and the mask portion 5 of the mask 6 has the function of a selective growth mask that causes the base semiconductor portion S11 to grow laterally. The mask 6 may be a mask layer, or it may be a mask pattern including the mask portion 5 and the opening K.

[0096] As the mask 6, for example, a single layer film containing one of the following can be used: a silicon oxide film (SiOx), a titanium nitride film (TiN, etc.), a silicon nitride film (SiNx), a silicon oxynitride film (SiON), and a metal film having a high melting point (e.g., 1000 degrees or higher), or a multilayer film containing at least two of these.

[0097] For example, a silicon oxide film with a thickness of approximately 100 nm to 4 μm (preferably approximately 150 nm to 2 μm) is formed over the entire surface of the seed portion 3 using a sputtering method, and a resist is applied to the entire surface of the silicon oxide film. Then, the resist is patterned using a photolithography method to form a resist with multiple stripe-shaped openings. Subsequently, a portion of the silicon oxide film is removed using a wet etchant such as hydrofluoric acid (HF) or buffered hydrofluoric acid (BHF) to create multiple openings K, and the mask 6 is formed by removing the resist with organic washing. As an alternative example, a silicon nitride film is formed using a sputtering apparatus or PECVD (Plasma The film may be deposited using an Enhanced Chemical Vapor Deposition (AVA) apparatus. The silicon nitride film can withstand the deposition temperature of the base semiconductor portion 8 (approximately 1000°C) even if it is thinner than the silicon oxide film. The thickness of the silicon nitride film can be approximately 5 nm to 4 μm.

[0098] The longitudinally shaped (slit-shaped) openings K can be arranged periodically in the X direction. The width of the openings K may be approximately 0.1 μm to 20 μm. The smaller the width of the openings K, the larger the width (size in the X direction) of the low-defect area SD (corresponding to the second part B2 or the third part B3).

[0099] Any abnormalities in the mask portion 5, such as pinholes, can be eliminated by performing organic cleaning after film formation and then introducing the material back into the film formation apparatus to form the same type of film again. A high-quality mask 6 can also be formed using a general silicon oxide film (single layer) and this re-formation method.

[0100] In Example 1, as an example of a template substrate 7, a silicon substrate having a (111) plane (e.g., a 2-inch Si substrate) is used as the main substrate 1, an AlN layer (approximately 30 nm to 300 nm, e.g., 150 nm) is used as the buffer portion 2, a GaN-based graded layer is used as the seed portion 3, and a laminated mask can be used for the mask 6 in which a silicon oxide film (SiO2) and a silicon nitride film (SiN) are formed in this order. The GaN-based graded layer is the first layer Al0.6 Ga 0.4 The mask may include an N layer (e.g., 300 nm) and a second GaN layer (e.g., 1-2 μm). For the mask 6, CVD (plasma chemical vapor deposition) can be used to deposit the silicon oxide film and the silicon nitride film, respectively, with the silicon oxide film thickness being, for example, 0.3 μm and the silicon nitride film thickness being, for example, 70 nm. The width of the mask portion 5 (size in the X direction) can be 50 μm, and the width of the opening K (size in the X direction) can be 5 μm.

[0101] (Base semiconductor section) Next, in Example 1, a base semiconductor portion S11 is formed on the template substrate 7 using the ELO method. In Example 1, the base semiconductor portion S11 is a GaN layer, and gallium nitride (GaN) ELO film deposition was performed on the template substrate 7 using an MOCVD apparatus. As an example of ELO film deposition conditions, the following can be used: substrate temperature: 1120°C, growth pressure: 50kPa, TMG (trimethylgallium): 22sccm, NH3: 15slm, V / III = 6000 (ratio of the amount of Group V raw material supplied to the amount of Group III raw material supplied).

[0102] In this case, the base semiconductor portion S11 is selectively grown (grows vertically) on the seed portion 3 (see Figure 16) exposed at the opening K, and then grows laterally on the mask portion 5. Then, the lateral growth of the GaN crystal films growing laterally on both sides of the mask portion 5 is stopped before they can meet. In Example 1, multiple base semiconductor portions S11 are formed by stopping the growth of semiconductor crystals (e.g., GaN-based crystals) growing closer to each other on the mask portion 5 before they can meet. As a result, a gap GP is formed between adjacent base semiconductor portions S11 in the X direction. The X direction is the <11-20> direction (a-axis direction) of the GaN-based crystal, the Y direction is the <1-100> direction (m-axis direction) of the GaN-based crystal, and the Z2 direction is the direction of the GaN-based crystal <0001> The direction (c-axis direction) is acceptable.

[0103] In the formation of the base semiconductor portion S11 in Example 1, a vertically growing layer that grows in the Z direction (c-axis direction) is formed on the seed portion 3 exposed from the opening K, and then a horizontally growing layer that grows in the X direction (a-axis direction) is formed. At this time, by setting the thickness of the vertically growing layer to 10 μm or less, 5 μm or less, or 3 μm or less, the thickness of the horizontally growing layer can be suppressed to be low, and the lateral film formation rate can be increased.

[0104] The through dislocation density of the low defect portion SD (corresponding to the second portion B2 or the third portion B3) in the base semiconductor portion S11 is 1 / 5 or less (for example, 5×10 6 / cm 2 or less) of the through dislocation density of the dislocation inheritance portion HD (corresponding to the first portion B1) in the base semiconductor portion S11. Here, the through dislocation density can be obtained, for example, by performing CL measurement on the surface of the base semiconductor portion S11 (for example, counting the number of black dots). The dislocation density can be expressed in the unit of [pieces / cm 2 , and in this specification, "[pieces]" may be omitted and expressed as [ / cm 2 . The density of the basal plane dislocations in the low defect portion SD may be 5×10 8 / cm 2 or less. The basal plane dislocations may be dislocations extending in the in-plane direction of the c-plane (X-Y plane) of the base semiconductor portion S11. Here, the basal plane dislocation density can be obtained, for example, by dividing the base semiconductor portion S11 to expose the side surface of the low defect portion SD and performing CL measurement on the dislocation density of this side surface.

[0105] The lateral width (size in the X direction) of the base semiconductor portion S11 was 53 μm, the width (size in the X direction) of the low defect portion SD was 24 μm, and the layer thickness (size in the Z direction) of the base semiconductor portion S11 was 5 μm. The aspect ratio of the base semiconductor portion S11 was 53 μm / 5 μm = 10.6, and a very high aspect ratio was realized. The width of the mask portion 5 can be set according to the specifications of the second type semiconductor portion S2 and the like (for example, about 10 μm to 200 μm). In Example 1, the adjacent base semiconductor portions S11 were not joined together, and a plurality of bar-shaped base semiconductor portions S11 were formed side by side in the X direction on the template substrate 7, and the lateral width (size in the X direction) of the gap GP was about 5 μm.

[0106] (Type 1 section, active section, Type 2 semiconductor section) In the manufacturing method of the light-emitting element of Example 1, a first type portion S12 is then formed above the base semiconductor portion S11. This forms the first type semiconductor portion S1. The first type portion S12 may include, for example, a buffer layer (regrowth portion) containing an n-type GaN semiconductor. The first type portion S12 can be formed, for example, by the MOCVD method. As described above, the first type portion S12 includes a first contact portion S121, a first cladding portion S122, and a first optical guide portion S123. For example, an n-type GaN layer can be used for the first contact portion S121, an n-type AlGaN layer for the first cladding portion S122, and an n-type GaN layer for the first optical guide portion S123.

[0107] Then, an active region AP is formed above the first type semiconductor region S1. The active region AP can be formed, for example, by the MOCVD method. For the active region AP, an MQW (Multi-Quantum Well) structure including an InGaN layer can be used, for example. The active region AP may typically have an MQW structure with 5 to 6 periods.

[0108] In the manufacturing method of the light-emitting element of Example 1, a second type semiconductor section S2 is formed, which is arranged from above the active section AP to the side of the first type semiconductor section S1. The second type semiconductor section S2 can be formed, for example, by the MOCVD method. As described above, the second type semiconductor section S2 includes a second optical guide section S21, an electron blocking section S22, a second optical cladding section S23, and a second contact section S24. For example, a p-type GaN layer can be used for the second optical guide section S21, a p-type AlGaN layer for the electron blocking section S22, a p-type AlGaN layer for the second optical cladding section S23, and a p-type GaN layer for the second contact section S24.

[0109] (Laminated structure) Next, a ridge-stripe structure, i.e., a ridge portion RJ, is formed using photolithography. In addition, a portion of the type 2 semiconductor portion S2, the active portion AP, and a part of the type 1 semiconductor portion S1 are etched or otherwise exposing a part of the upper surface of the type 1 semiconductor portion S1. The exposed portion of the surface of the type 1 semiconductor portion S1 may be, for example, the first contact portion S121. The side surface formed by the etching of the type 1 semiconductor portion S1, which is located on the opposite side in the X direction from the first side surface FS of the type 1 semiconductor portion S1, is called the third side surface TS. The second side surface SS of the type 1 semiconductor portion S1 may be covered by the type 2 semiconductor portion S2, and the third side surface TS may not be covered by the type 2 semiconductor portion S2. The first side surface FS and the second side surface SS may be crystal planes, while the third side surface TS is a processed surface.

[0110] Then, an insulating film DF is formed so as to partially cover the upper surface of the second type semiconductor portion S2 (so that the ridge portion RJ is exposed), and then a first contact electrode E11 is formed on the second contact portion S24 of the ridge portion RJ. A first auxiliary electrode E12 is formed so as to cover the first contact electrode E11 and the insulating film DF. In addition, a second electrode E2 is formed on the upper surface of the exposed portion of the surface of the first type semiconductor portion S1. The second electrode E2 may include a second contact electrode and a second auxiliary electrode (not shown).

[0111] For the first electrode E1 (anode) and the second electrode E2 (cathode), a single-layer or multilayer film can be used, selected from, for example, (i) a metal film (which may also be an alloy film) containing at least one of Ni, Rh, Pd, Cr, Au, W, Pt, Ti, and Al, and (ii) a conductive oxide film containing at least one of Zn, In, and Sn. For the insulating film DF covering the ridge portion RJ, a single-layer or multilayer film can be used, for example, containing an oxide or nitride of Si, Al, Zr, Ti, Nb, or Ta.

[0112] The first contact electrode E11 (p-contact electrode) may be, for example, a Pd film with a thickness of 50 nm. The first auxiliary electrode E12 may be a multilayer film in which a Ti film with a thickness of 100 nm, a Ni film with a thickness of 200 nm, and an Au film with a thickness of 100 nm are formed in this order. The second auxiliary electrode of the second electrode E2 may have the same configuration as the first auxiliary electrode E12, and for example, a Ti film with a thickness of 100 nm may also serve as the n-contact electrode.

[0113] The insulating film DF, the first electrode E1, and the second electrode E2 may be formed in a manner that avoids the portion where the open groove GS is formed, i.e., the position where scribing takes place. The length of one insulating film DF in the Y direction, the length of one first electrode E1 in the Y direction, and the length of one second electrode E2 in the Y direction may each be smaller than the resonator length L1.

[0114] In this way, a laminated body LB is formed having a first type semiconductor portion S1, a second type semiconductor portion S2 including a ridge portion RJ, and a first electrode E1 and a second electrode E2, etc. This makes it possible to form a semiconductor substrate 10 having multiple bar-shaped laminated bodies LB.

[0115] Alternatively, the second semiconductor portion S2, the active portion AP, and the first semiconductor portion S1 may be excavated until, for example, the base semiconductor portion S11 in the first semiconductor portion S1 is exposed, thereby forming the second electrode E2 on the base semiconductor portion S11.

[0116] (Laser body) In the manufacturing method of the light-emitting element of Example 1, the laminate LB is then cleaved on the template substrate 7 (m-plane cleavage of the first and second type semiconductor parts S1 and S2, which are nitride semiconductor layers) to form a light-emitting element 20 having a pair of resonator end faces F1 and F2. If the laminate LB is bar-shaped, for example, the laminate LB is cleaved in a direction perpendicular to the longitudinal direction (Y direction) of the laminate LB (X direction). Multiple individual pieces obtained by dividing the laminate LB can each be made into a light-emitting element 20. As a result, a gap (open groove GS) is formed between adjacent light-emitting elements 20 in the Y direction.

[0117] In Example 1, the laminate LB may be scribed (for example, by forming scribe grooves that serve as cleavage starting points). The specific method of scribing is not particularly limited, but for example, the laminate LB may be scribed by applying a force parallel to the m-plane of the nitride semiconductor crystal in the second type semiconductor portion S2 using a scriber. The scriber may be a diamond scriber or a laser scriber.

[0118] In Example 1, a pair of resonator end faces F1 and F2 may be formed by naturally occurring cleavage by scribing the laminate LB. The base semiconductor portion S11 includes a GaN-based semiconductor, and the base substrate BK includes a main substrate 1 made of a material with a smaller coefficient of thermal expansion than the GaN-based semiconductor. For example, the base semiconductor portion S11 may include GaN, and the base substrate BK may include a Si substrate or a SiC substrate.

[0119] When forming a base semiconductor portion S11 on a dissimilar substrate such as a Si substrate by the ELO method, the film deposition temperature is high, for example, 1000°C or higher, and internal stress is generated in the base semiconductor portion S11 when the temperature is lowered to room temperature after film deposition. This internal stress is caused, for example, by the difference in thermal expansion coefficients between the main substrate 1 and the base semiconductor portion S11.

[0120] If the thermal expansion coefficient of the main substrate 1 is smaller than that of the base semiconductor portion S11, tensile stress will be generated in the base semiconductor portion S11. For example, if the main substrate 1 is a Si substrate and the constituent material of the base semiconductor portion S11 is GaN, tensile stress will be generated in the base semiconductor portion S11. In addition, internal stress can be generated in the base semiconductor portion S11 due to strain caused by the difference in lattice constants between the main substrate 1 and the base semiconductor portion S11. When such a laminate LB is scribed, the internal stress in the base semiconductor portion S11 is released and tensile strain is generated at the cleavage initiation point, causing cleavage to proceed spontaneously.

[0121] For example, by scribing the laminate LB at 100 μm intervals along its longitudinal direction, the resonator length L1 of the light-emitting element 20 can be set to 100 μm. By scribing, the internal stress in the base semiconductor portion S11 causes cleavage of the laminate LB to proceed naturally, separating the laminate LB into multiple individual light-emitting elements 20. At this time, the main substrate 1 is not divided. The mask portion 5 does not need to be divided, and may be divided due to the cleavage of the laminate LB. At the opening K of the mask 6, the base semiconductor portion S11 of each laminate LB and the base substrate BK are chemically bonded. Therefore, the light-emitting elements 20 are held by the base substrate BK, and their position on the base substrate BK is maintained.

[0122] In Example 1, by forming the light-emitting element 20 by cleavage, the volume of the laminated body LB that disappears can be reduced compared to, for example, the case where the open groove GS is formed by dry etching. Therefore, the semiconductor substrate 10 can be used efficiently (as an element).

[0123] Furthermore, in Example 1, the resonator end faces F1 and F2 are formed by cleavage of the m-plane, resulting in excellent planarity and perpendicularity to the c-plane (parallelism of the resonator end faces F1 and F2), and high optical reflectivity can be obtained by coating with a highly reflective film. For this reason, mirror loss can be reduced even with short resonator lengths of 200 μm or less, where mirror loss becomes large, and stable laser oscillation is possible even with short resonator lengths of 200 μm or less, where optical gain becomes small. The resonator end faces F1 and F2 in the area corresponding to the light emission region EA are formed on the second part B2, which is a low-defect area SD, resulting in excellent planarity of the cleavage surface and high optical reflectivity.

[0124] (Support base) The method for manufacturing a light-emitting element in Example 1 includes the step of preparing a support substrate SK. The support substrate SK to be prepared only needs to allow the light-emitting element 20 to be mounted via junction down, and its specific configuration is not particularly limited, but an example is described below. Figure 17 is a plan view showing an example of the configuration of the support substrate.

[0125] As shown in Figure 17, the support substrate SK comprises conductive T-shaped first pad portion P1 and second pad portion P2, a first bonding material CA1 that functions as a bonding layer with the first pad portion P1, and a second bonding material CA2 that functions as a bonding layer with the second pad portion P2. Examples of materials for the substrate body portion BS in the support substrate SK include Si, SiC, and AlN. The first bonding material CA1 and the second bonding material CA2 correspond to the aforementioned bonding material CA and may be composed of conductive materials having at least one of the following properties: heat fluidity, pressure curability, thermosetting, and photocurability. The first bonding material CA1 and the second bonding material CA2 may be, for example, solder.

[0126] In Example 1, for example, the support substrate SK may be formed as follows. That is, a 4-inch Si substrate is used as the substrate body BS, and the first pad portion P1 and the second pad portion P2 are formed by a wafer process using photolithography technology. Multiple recesses HL (rectangular in plan view) can be formed in a matrix with a depth of 100 μm by reactive ion etching (RIE) or the like. Then, the first bonding material CA1 and the second bonding material CA2 are formed. The first pad portion P1 and the second pad portion P2 may each be a multilayer film in which a 10 nm thick Cr film, a 25 nm thick Pt film, and a 100 nm thick Au film are formed in this order from the substrate body BS side. The first bonding material CA1 may be, for example, an AuSn bonding layer in which a 3000 nm thick AuSn film and a 100 nm thick Au film are formed in this order from the substrate body BS side. In Example 1, the second bonding material CA2 is made of the same material as the first bonding material CA1, and may be thicker than the first bonding material CA1.

[0127] The material of the substrate body BS in the support substrate SK and the material of the base substrate BK in the semiconductor substrate 10 may be the same, for example, Si. In this case, the thermal expansion coefficient of the support substrate SK and the thermal expansion coefficient of the semiconductor substrate 10 can be made the same. This improves the alignment accuracy between the support substrate SK and the semiconductor substrate 10 and reduces the possibility of transfer defects occurring due to the effects of temperature changes caused by heating and cooling during selective transfer.

[0128] (light-emitting element) In Example 1, after forming the light-emitting element 20, the mask portion 5 may be removed by etching using hydrofluoric acid, buffered hydrofluoric acid (BHF), etc. In other words, the mask portion 5 of the semiconductor substrate 10 may be removed before junction-down mounting to the support substrate SK. This makes it easier to separate the light-emitting element 20 from the template substrate 7. The semiconductor substrate 10 has a gap GP, so the mask portion 5 is partially exposed. Therefore, the mask portion 5 is easy to remove by etching.

[0129] The semiconductor substrate 10 may be divided into appropriate sizes by dicing or the like, for example, into 10mm square pieces. Alternatively, the support substrate SK may be divided into appropriate sizes by dicing or the like, for example, the support substrate SK may be cut into 10mm square pieces so that they are the same size as the small pieces of semiconductor substrate 10.

[0130] Subsequently, in the manufacturing method of the light-emitting element in Example 1, the light-emitting elements 20 are mounted on the support substrate SK using a junction-down mounting method. For example, a portion of selected light-emitting elements 20 may be selectively transferred from the semiconductor substrate 10 to the support substrate SK, such as every two or three light-emitting elements 20, spanning across multiple light-emitting elements 20. On the semiconductor substrate 10, the light-emitting elements 20 are individually separated by the presence of gaps GP and open grooves GS between them on the template substrate 7. Therefore, selective transfer can be easily performed.

[0131] Figure 18 is a schematic perspective view of a light-emitting substrate (semiconductor laser array) in which multiple light-emitting elements are bonded to a support substrate. The light-emitting substrate 31 comprises a support substrate SK and multiple light-emitting elements 20. In the light-emitting substrate 31, the multiple light-emitting elements 20 may be arranged in a matrix on the support substrate SK in the direction that defines the resonator length (Y direction) and in the direction perpendicular thereto (X direction), so that the directions of the resonator lengths are aligned.

[0132] Next, a reflective mirror film UF is formed on the resonator end faces F1 and F2 of the light-emitting body 20. The reflective mirror film UF is formed for reflectivity adjustment and passivation, etc. The reflective mirror film UF may be formed using a two-dimensionally arranged light-emitting substrate 31, or the light-emitting substrate 31 may be divided into bar shapes and then the reflective mirror film UF may be formed using the formed bar-shaped light-emitting substrate 31.

[0133] Figure 19 is a perspective view showing an example of a bar-shaped light-emitting substrate after division. A two-dimensionally arranged light-emitting substrate 31, as shown in Figure 18, can be laterally divided (divided into rows extending in the X direction) to obtain a one-dimensionally arranged (bar-shaped) light-emitting substrate 31, as shown in Figure 19. By using a one-dimensional arrangement, the formation of a reflective boundary film UF on a pair of resonator end faces F1 and F2 becomes easier.

[0134] The support substrate SK has a wide portion SH and a mounting portion SB. The light-emitting element 20 is positioned above the mounting portion SB such that the width direction (Y direction) of the mounting portion SB coincides with the direction of the resonator length. In a plan view, the light-emitting substrate 31 may have a pair of resonator end faces F1 and F2 of the light-emitting element 20 protruding from the mounting portion SB. The mounting portion SB is formed between two notches C1 and C2 facing each other in the direction that defines the resonator length (Y direction), with the resonator end face F1 located on the notch C1 and the resonator end face F2 located on the notch C2. The notches C1 and C2 correspond to the recesses HL in the support substrate SK before they are divided. The shape of the notches C1 and C2 can be, for example, rectangular in a plan view in the Z1 direction. The presence of notches C1 and C2 in the support substrate SK facilitates the formation of the reflective boundary film UF on the pair of resonator end faces F1 and F2. Furthermore, it effectively reduces the possibility of the first bonding material CA1 traveling up the end face 20F (see Figure 2) of the light-emitting element 20.

[0135] Subsequently, the light-emitting substrate 31 may be further divided. This allows for the formation of multiple light-emitting elements 30, each consisting of one or more light-emitting elements 20 mounted on a support ST via a junction-down mounting mechanism.

[0136] Figure 20 is a perspective view showing the configuration of the light-emitting element in Example 1. Figure 21 is a cross-sectional view showing the configuration of the light-emitting element in Example 1. As shown in Figures 20 and 21, the light-emitting element 30 comprises a light-emitting body 20, a first bonding material CA1 and a second bonding material CA2, and a support ST that supports the light-emitting body 20 via the first and second bonding materials CA1 and CA2 such that the first type semiconductor portion S1 is located above the active portion AP.

[0137] The support ST includes conductive first pad portions P1 and second pad portions P2. The first electrode E1 is connected to the first pad portion P1 via a first bonding material CA1, and the second electrode E2 is connected to the second pad portion P2 via a second bonding material CA2. The substrate portion BP, which is the main body portion of the support ST, corresponds to a divided portion of the substrate main body portion BS of the support substrate SK. The second bonding material CA2 is thicker than the first bonding material CA1, and the difference in thickness between the first bonding material CA1 and the second bonding material CA2 may be greater than or equal to the thickness of the second type semiconductor portion S2. This makes it easier to bond the first and second electrodes E1 and E2 to the first and second pad portions P1 and P2, which are located on the same plane. The light-emitting element 30 functions as a COS (Chip on Submount).

[0138] The first pad portion P1 includes a mounting portion J1 located on the wide portion SH and having a length in the Y direction greater than the resonator length L1, and a contact portion Q1 located on the mounting portion SB and having a length in the Y direction less than the resonator length L1. The second pad portion P2 includes a mounting portion J2 located on the wide portion SH and having a length in the Y direction greater than the resonator length L1, and a contact portion Q2 located on the mounting portion SB and having a length in the Y direction less than the resonator length L1. The contact portions Q1 and Q2 are aligned in the X direction on the upper surface of the mounting portion SB, with a first bonding material CA1 formed on contact portion Q1 and a second bonding material CA2 formed on contact portion Q2. The first bonding material CA1 contacts the first electrode E1 of the light-emitting body 20, and the second bonding material CA2 contacts the second electrode E2 of the light-emitting body 20. Solder such as AuSi or AuSn can be used as the material for the first bonding material CA1 and the second bonding material CA2.

[0139] The resonator end faces F1 and F2 of the light-emitting body 20 are covered with a reflective boundary film UF. However, a dielectric film SF made of the same material as the reflective mirror film UF may be formed on a side surface of the support ST that is parallel to the resonator end faces F1 and F2 (for example, the side surface of the mounting portion SB).

[0140] For example, when junction-down mounting a light-emitting element 20 from a semiconductor substrate 10 to a support substrate SK, the semiconductor substrate 10 and the support substrate SK are brought into contact with each other and a load is applied. Then, the first bonding material CA1 and the second bonding material CA2 are melted, held for a certain period of time, and then cooled to room temperature. As a result, the semiconductor substrate 10 and the support substrate SK are bonded to each other. Specifically, the first electrode E1 and the first pad portion P1 are bonded by the first bonding material CA1, and the second electrode E2 and the second pad portion P2 are bonded by the second bonding material CA2. Subsequently, by applying an external force to move the semiconductor substrate 10 and the support substrate SK away from each other, a desired light-emitting element 20 from among the multiple light-emitting elements 20 on the semiconductor substrate 10 is selectively transferred to the support substrate SK.

[0141] The fluid first bonding material CA1 and second bonding material CA2 spread over the first pad portion P1 and the second pad portion P2, and can also travel up the side surface 20T of the light-emitting element 20. In a plan view of the light-emitting element 30 in the stacking direction of the first semiconductor portion S1 and the active portion AP, a portion of the edge ED1 of the first bonding material CA1 may protrude from the light-emitting element 20. In Example 1, because the light-emitting element 20 has a single-sided two-electrode structure, the first bonding material CA1 tends to protrude outward in the X direction from the light-emitting element 20 in a plan view.

[0142] In the light-emitting element 30 of Example 1, the first bonding material CA1 extends upstream along the second type semiconductor portion S2 located to the side of the first side surface FS. The upstream height H1 of the first bonding material CA1 may exceed the lower surface level LV of the first type semiconductor portion S1. The light-emitting element 20 has the second type semiconductor portion S2 arranged from below the active portion AP to the side of the first side surface FS on the first type semiconductor portion S1. In the light-emitting element 30, the formation height H3 of the second type semiconductor portion S2 is greater than the upstream height H1 of the bonding material CA. As a result, even when the first bonding material CA1 extends upstream along the first side surface FS, the light-emitting element 30 can effectively reduce the possibility of the first bonding material CA1 and the first type semiconductor portion S1 coming into contact with each other.

[0143] The light-emitting element 30 may have a width W10 in the X direction of 50 μm or less, or 20 μm or less. The width W10 may be the distance in the X direction between the third side surface TS and the outer surface of the second type semiconductor portion S2 located to the side of the first side surface FS. The light-emitting element 30 may have a distance L11 in the X direction between the third side surface TS and the end face PE1 of the first pad portion P1, in which case the first bonding material CA1 can be made less likely to travel up the third side surface TS. At least a part of the third side surface TS may be covered with an insulating film DF, and at least a part of the third side surface TS may be in contact with the insulating film DF.

[0144] The first type semiconductor portion S1 has a second portion (wing portion) B2 that is closer to the first side surface FS than the first portion (central portion) B1 in the X direction (a-axis direction of the nitride semiconductor crystal) and has a lower penetration dislocation density than the first portion B1. In the light-emitting element 30, the ridge portion RJ overlaps with the second portion B2 in a plan view, and each of the pair of resonator end faces F1 and F2 is the m-plane of the nitride semiconductor. The active portion AP includes a light-emitting region (light-emitting portion) EA located below the second portion B2.

[0145] In Example 1, the first type semiconductor portion S1 has an exposed portion ES below which the second type semiconductor portion S2 is not located. The exposed portion ES may be a portion formed by excavating a part of the first type semiconductor portion S1. The light-emitting element 30 has a first electrode (anode) E1 below the second type semiconductor portion S2 and a second electrode (cathode) E2 below the exposed portion ES.

[0146] In the light-emitting element 30, the second type semiconductor portion S2 may be arranged from below the active portion AP to the side of the first side surface FS and the side of the second side surface SS in the first type semiconductor portion S1, and the second bonding material CA2 may extend upstream along the second type semiconductor portion S2 located to the side of the second side surface SS. In the light-emitting element 30, a portion of the edge ED3 of the second bonding material CA2 in the width direction (X-axis direction) that is farther from the first side surface FS may protrude from the light-emitting body 20 in a plan view. In the light-emitting element 30, the third side surface TS, which is located on the exposed portion ES side, is a surface formed by etching or the like, and does not need to be covered by the second type semiconductor portion S2.

[0147] (Alternative configuration example 1) (1A) In Example 1, the laminated body LB was divided into multiple light-emitting elements 20 by forming open grooves GS by cleaving the laminated body LB. However, the invention is not limited to this, and the open grooves GS may also be formed by forming multiple trenches in the laminated body LB, thereby dividing the laminated body LB into multiple light-emitting elements 20.

[0148] For example, multiple trenches can be formed as open grooves GS by dry etching the laminate LB. This allows for the formation of a pair of resonator end faces F1 and F2 (etched mirrors). The trenches may be formed after the first electrode E1 and the second electrode E2 are formed, or the first electrode E1 and the second electrode E2 may be formed after the trenches are formed.

[0149] (1B) In another example of the light-emitting element 30, the active portion AP may be arranged from below the first type semiconductor portion S1 to the side of the first type semiconductor portion S1, and the active portion AP may cover at least a portion of the first side surface FS. Alternatively, the active portion AP may cover at least a portion of the second side surface SS of the first type semiconductor portion S1.

[0150] When depositing the active portion AP on the first semiconductor portion S1, the raw material for the active portion AP may be supplied to the first side surface FS and the second side surface SS. Because the active portion AP has a thin film thickness, it is difficult for the active portion AP to form on the surfaces of the first side surface FS and the second side surface SS of the first semiconductor portion S1, but the active portion AP may exist between the first side surface FS and the second semiconductor portion S2, or between the second side surface SS and the second semiconductor portion S2.

[0151] (1C) In another example of the light-emitting element 30, the light-emitting body 20 may be a laser body (semiconductor laser chip) having a double-sided electrode structure. Figure 22 is a perspective view showing the configuration of the light-emitting element in another example of Example 1. Figure 23 is a cross-sectional view showing the configuration of the light-emitting element in another example of Example 1.

[0152] As shown in Figures 22 and 23, in the light-emitting element 30 of another example of Embodiment 1, a first electrode (anode) E1 may be provided below the second type semiconductor part S2, and a second electrode (cathode) E2 may be provided above the first type semiconductor part S1. The light-emitting element 30 does not need to have an exposed part ES of the light-emitting body 20. Also, the lower surface of the second type semiconductor part S2 may be covered with an insulating film DF. The second bonding material CA2 may be solder, or it may be made of a material that does not conduct electricity. The edge ED3 of the second bonding material CA2 may protrude from the light-emitting body 20 in a plan view. If the second bonding material CA2 is conductive, an insulating film D1 may be formed covering the second side surface SS of the first type semiconductor part S1, the active part AP, and the side surface of the second type semiconductor part S2. If the second bonding material CA2 is not conductive, the insulating film D1 may not be formed. The second electrode E2 formed on the back surface (the side furthest from the support ST) of the first type semiconductor portion S1 may be connected to the second pad portion P2, for example, via a conductive film MF. The second electrode E2 may also be wire-bonded to the second pad portion P2.

[0153] (1D) Figure 24 is a schematic cross-sectional view showing a method for manufacturing a light-emitting element in an alternative example of Example 1. As shown in Figure 24, in the alternative example of Example 1, for example, when forming an insulating film DF to cover the side surface of the ridge portion RJ, the insulating film DF may be formed from above the second type semiconductor portion S2 to the side of the first type semiconductor portion S1. The light-emitting element 30 in the alternative example of Example 1 may include a first insulating film DF1 that covers the portion of the second type semiconductor portion S2 that wraps around onto the first side surface FS. The first insulating film DF1 may be in contact with the second type semiconductor portion S2. As mentioned above, there may be portions on the first side surface FS where the second type semiconductor portion S2 is not located, and in this case, there may be portions between the first insulating film DF1 and the first side surface FS where the second type semiconductor portion S2 does not exist, and in such portions, the first insulating film DF1 may be in contact with the first side surface FS.

[0154] Furthermore, a second insulating film DF2 may be formed to cover the portion of the second type semiconductor portion S2 that wraps around onto the second side surface SS. The second type semiconductor portion S2 does not necessarily have to exist between the second insulating film DF2 and the second side surface SS, and the second insulating film DF2 may be in contact with the second side surface SS in that portion.

[0155] The first insulating film DF1 may be formed separately from the insulating film DF after the insulating film DF is formed above the second type semiconductor portion S2. The first insulating film DF1 can be formed during the time it takes to transfer the light-emitting body 20 to the support substrate SK. The second insulating film DF2 may be formed at the same time as the first insulating film DF1, or the second insulating film DF2 may not be formed at all.

[0156] The insulating film DF may be formed from above the second type semiconductor portion S2 to the third side surface TS. Even if the first bonding material CA1 moves upstream along the third side surface TS, the possibility of the first bonding material CA1 contacting the first type semiconductor portion S1 can be effectively reduced.

[0157] Although not shown in the diagram, even when the light-emitting element 20 has a double-sided electrode structure, the first insulating film DF1 and the second insulating film DF2 can be formed in the same manner as described above.

[0158] Furthermore, the following effects are also achieved. For example, when dry etching is performed on a certain laminate LB, the dry etching may affect an adjacent laminate LB due to factors such as insufficient protection by the resist. If the first side surface FS is covered only by the second type semiconductor portion S2, the first type semiconductor portion S1 may be exposed due to the effects of dry etching. In contrast, by forming an insulating film DF or a first insulating film DF1 on the first side surface FS, the possibility of unintended effects from dry etching can be effectively reduced.

[0159] (1E) When forming the base semiconductor portion S11 using the ELO method, a template substrate 7 including a main substrate 1 and a mask 6 on the main substrate 1 may be used, and the template substrate 7 may have a growth suppression region corresponding to the mask portion 5 (for example, a region that suppresses crystal growth in the Z direction) and a seed region corresponding to the opening K. For example, the base semiconductor portion S11 can also be formed on a template substrate having a growth suppression region and a seed region using the ELO method.

[0160] [Example 2] Figure 25 is a flowchart schematically showing the method for manufacturing the light-emitting element in Example 2. Figure 26 is a cross-sectional view schematically showing the method for manufacturing the light-emitting element in Example 2. Figure 27 is a plan view schematically showing the method for manufacturing the light-emitting element in Example 2.

[0161] In Example 1, a laminate LB was formed by forming a second type semiconductor part S2 on a first type semiconductor part S1 having a low defect part SD and a dislocation inheritance part HD. In Example 2, the portion over the opening K (dislocation inheritance part HD) in the first type semiconductor part S1 formed on the template substrate 7 is removed, and a second type semiconductor part S2 is formed on the first type semiconductor part S1 having a low defect part SD. In Example 2, an example of forming a light-emitting body 20 having a double-sided electrode structure is described, but as mentioned above, it is also possible to form a light-emitting body 20 having a single-sided two-electrode structure. For example, by forming the first type semiconductor part S1 with a wider width, it is also possible to form a light-emitting body 20 having a single-sided two-electrode structure using the low defect part SD.

[0162] As shown in Figures 25 to 27, first, a semiconductor substrate 10 is prepared. The semiconductor substrate 10 may have a plurality of bar-shaped first-type semiconductor portions S1 formed by stopping the growth of a plurality of semiconductor crystals (e.g., GaN-based crystals) that grow closer to each other on the mask portion 5 before they come together.

[0163] Multiple trenches TR are formed in the first semiconductor portion S1 by etching to remove the bonding portion between the first semiconductor portion S1 and the base substrate BK of the template substrate 7 (for example, the bonding portion with the seed portion 3: see Figure 16). This divides the first semiconductor portion S1. The trenches TR may extend in the longitudinal direction (Y direction) of the opening K. In Embodiment 2, the trenches TR may form a fourth side surface FTS, which is one of the two side surfaces of the first semiconductor portion S1 that face each other in the a-axis direction.

[0164] In Example 2, the first type semiconductor portion S1 is loosely bonded to the mask portion 5. Therefore, after forming the active portion AP and the second type semiconductor portion S2, an anchor film AF may be formed on the template substrate 7 so that the laminate LB does not change position.

[0165] The anchor film AF is in contact with the side surface of the type 2 semiconductor part S2 or the side surface of the type 1 semiconductor part S1, as well as the mask part 5, and secures the laminate LB to the template substrate 7. Dielectric films such as silicon oxide film, silicon nitride film, aluminum oxide film, silicon oxynitride film, aluminum oxide-silicon film, aluminum oxynitride film, zirconium oxide film, titanium oxide film, and tantalum oxide film can be used as the anchor film AF.

[0166] During the selective transfer of the light-emitting element 20 in a later process, at least a portion of the anchor film AF may remain on the template substrate 7 or may be attached to the light-emitting element 20. Since the anchor film AF is non-conductive, even if it ultimately remains on the chip, there is no risk of causing electrical leakage or other problems.

[0167] Next, a second type semiconductor portion S2 having an active portion AP and a ridge portion RJ is formed above the first type semiconductor portion S1. The second type semiconductor portion S2 may be in contact with at least a portion of the fourth side surface FTS. After forming an insulating film DF on the ridge portion RJ, the first electrode E1 is formed. Then, an open groove portion GS is formed in the laminate LB. This divides the laminate LB into a plurality of light-emitting elements 20. The open groove portion GS may be a gap space created by cleavage, or it may be a trench TR. The subsequent steps may be the same as in the above-described Example 1 and Alternate Configuration Example 1C. The anchor film AF and the mask portion 5 may be removed before junction-down mounting of the light-emitting elements 20 to the support substrate SK. If the anchor film AF is positioned to cover the first side surface FS, the possibility of contact between the first bonding material CA1 and the first side surface FS can be effectively reduced.

[0168] (Another configuration example 2) Figure 28 is a schematic plan view showing a method for manufacturing a light-emitting element in an alternative example of Example 2. In this alternative configuration of Example 2, a first-type semiconductor portion S1 may be formed in a planar shape using the ELO method, and then multiple bar-shaped first-type semiconductor portions S1 may be formed by etching or the like. As shown in Figure 28, the first-type semiconductor portion S1 is formed on the prepared template substrate 7 using the ELO method. In this alternative configuration of Example 2, semiconductor crystals (e.g., GaN-based crystals) growing closer to each other on the mask portion 5 stop growing after they meet on the mask portion 5. Subsequently, multiple first-type semiconductor portions S1 are formed by removing the semiconductor crystals at the meeting points.

[0169] The meeting occurs approximately in the center of adjacent openings K (the center of the mask portion 5). Multiple bar-shaped first-type semiconductor portions S1 are formed by forming multiple trenches TR extending in the Y direction on the planar first-type semiconductor portion S1 in a planar view. The dislocation inheritance portion HD may or may not be removed by the trenches TR. The trenches TR may be formed so that the base substrate BK is exposed in a planar view by removing the mask portion 5, or they may be formed so that the mask portion 5 remains. The subsequent steps may be the same as in the above-described embodiment 2.

[0170] [Example 3] Figure 29 is a cross-sectional view showing an example of lateral growth of the base semiconductor portion. Figure 30 is a schematic cross-sectional view showing the manufacturing method of the light-emitting element in Example 3.

[0171] The base semiconductor portion S11 formed by the ELO method can be grown laterally as follows. As shown in Figure 29, an initial growth portion SL may be formed on the seed portion 3 (upper GaN layer) exposed from the opening K, and then the base semiconductor portion S11 may be grown laterally from the initial growth portion SL. The initial growth portion SL serves as the starting point for the lateral growth of the base semiconductor portion S11. By appropriately controlling the ELO film deposition conditions, it is possible to control the growth of the base semiconductor portion S11 in the Z direction (c-axis direction) or in the X direction (a-axis direction).

[0172] Here, the deposition of the initial growth portion SL may be stopped just before the edge of the initial growth portion SL rides up onto the upper surface of the mask portion 5 (when it is in contact with the upper edge of the side surface of the mask portion 5), or immediately after it rides up onto the upper surface of the mask portion 5 (i.e., at this timing, the ELO deposition conditions may be switched from c-axis deposition conditions to a-axis deposition conditions). In this way, since lateral deposition is performed from a state in which the initial growth portion SL is slightly protruding from the mask portion 5, the consumption of material for growth in the thickness direction of the base semiconductor portion S11 is reduced, and the base semiconductor portion S11 can be grown laterally at high speed. The initial growth portion SL can have a thickness of, for example, 0.5 μm or more and 4.0 μm or less.

[0173] In Example 3, as shown in Figure 30, the first side surface FS of the first type semiconductor portion S1, which is the side surface closer to the ridge portion RJ, may include a first inclined surface IFS that slopes toward the ridge portion RJ. The second type semiconductor portion S2 may cover the first inclined surface IFS. Furthermore, the first type semiconductor portion S1 may include a second inclined surface ISS on its second side surface SS that slopes toward the ridge portion RJ. The second type semiconductor portion S2 may cover the second inclined surface ISS.

[0174] In Example 3, the presence of the first inclined surface IFS facilitates the formation of the second type semiconductor portion S2 from above the active portion AP to the side of the first type semiconductor portion S1. Furthermore, it facilitates the formation of the insulating film DF from above the second type semiconductor portion S2 to the side of the first type semiconductor portion S1. In Example 3, the insulating film DF may be formed from above the second type semiconductor portion S2 to the side of the first type semiconductor portion S1, in which case the insulating film DF may be located above the normal direction of at least a part of the first inclined surface IFS. The insulating film DF may cover at least a part of the second type semiconductor portion S2 formed on the first inclined surface IFS. Alternatively, a first insulating film DF1 formed separately from the insulating film DF may cover at least a part of the first inclined surface IFS.

[0175] The first inclined surface IFS may be a crystal plane, for example, a (11-22) plane of a nitride semiconductor crystal, or a (11-2β) plane (where β is an integer). The height H4 of the first inclined surface IFS in the Z2 axis direction may be 0.1 times or more and 0.9 times or less the height H11 of the first type semiconductor part S1 (see Figure 11). The first inclined surface IFS is not limited to a crystal plane, but may also be a machined surface.

[0176] In Example 3, the first type semiconductor portion S1 has a first inclined surface IFS, which facilitates the formation of an insulating film DF extending to the first inclined surface IFS. The formation of the insulating film DF extending to the first inclined surface IFS effectively reduces the possibility of unintended effects on the laminate LB due to dry etching. As a result, when the light-emitting element 20 is junction-down mounted to the support substrate SK, the possibility of a short circuit between the first electrode E1 and the first type semiconductor portion S1 via the first bonding material CA1 can be effectively reduced.

[0177] [Example 4] Figure 31 is a flowchart schematically showing the method for manufacturing the light-emitting element in Example 4. Figure 32 is a cross-sectional view schematically showing the method for manufacturing the light-emitting element in Example 4. Figure 33 is a cross-sectional view schematically showing the method for manufacturing the light-emitting element in Example 4.

[0178] As shown in Figures 31 to 33, the method for manufacturing a light-emitting element in Example 4 includes the steps of: preparing a semiconductor substrate on which a first-type semiconductor portion S1, an active portion AP, and a second-type semiconductor portion S2 are formed in that order on a base substrate BK; and forming an insulating film (first insulating film DF1) on at least one side surface of the first-type semiconductor portion S1, the active portion AP, and the second-type semiconductor portion S2.

[0179] For example, depending on the film deposition conditions, the active portion AP and the type 2 semiconductor portion S2 may not be formed to wrap around the first side surface FS. In Example 4, a first insulating film DF1 is formed on the side of the first side surface FS, covering at least one side of the type 1 semiconductor portion S1, the active portion AP, and the type 2 semiconductor portion S2. Alternatively, a second insulating film DF2 may be formed to cover the second side surface SS.

[0180] The method for manufacturing a light-emitting element in Example 4 further includes the steps of preparing a support substrate SK and bonding a light-emitting element 20, which includes at least a portion of the first type semiconductor portion S1, the active portion AP, and the second type semiconductor portion S2, to the support substrate SK via a first bonding material CA1 and a second bonding material CA2 such that the first type semiconductor portion S1 is positioned above the active portion AP.

[0181] The second type semiconductor portion S2, the active portion AP, and a portion of the first type semiconductor portion S1 are etched away to expose a portion of the upper surface of the first type semiconductor portion S1. This forms the exposed portion ES. The third side surface TS does not need to have an insulating film formed on it. A ridge portion RJ is formed on the second type semiconductor portion S2. Then, the first electrode E1 and the second electrode E2 are formed.

[0182] Next, the laminate LB is divided to form a light-emitting element 20 having a single-sided two-electrode structure. Thus, the method for manufacturing a light-emitting element in Example 4 includes a step of dividing the active part AP into multiple parts after forming the first insulating film DF1, such that the cross-section is parallel to the thickness direction of the active part AP and intersects the first side surface FS. Then, a step of separating the light-emitting element 20 from the base substrate BK is performed. The light-emitting element 30 is formed by junction-down mounting the light-emitting element 20 onto the support substrate SK. Further details of each step can be understood by referring to Examples 1 to 3 described above.

[0183] In conventional methods, where the sides of the laser body are formed during the final chip cutting process, it is difficult to form insulating films on the sides of multiple laser bodies simultaneously. In contrast, in Example 4, insulating films can be formed simultaneously on the sides of multiple light-emitting elements 20 on the base substrate BK (in other words, insulating films can be formed simultaneously at the wafer level).

[0184] [Example 5] Figure 34 is a perspective view showing the configuration of the light-emitting element in Example 5. Figure 35A is a partial cross-sectional view of the light-emitting element in Example 5. Figure 35B is a partial plan view of the light-emitting element in Example 5. Figure 36 is a schematic plan view showing the method for manufacturing the light-emitting element in Example 5.

[0185] In the light-emitting element of Example 5, the light-emitting element 20 may be, for example, a light-emitting diode. As shown in Figures 34 to 36, the light-emitting element 20 includes at least a portion of the first type semiconductor portion S1, the active portion AP, and the second type semiconductor portion S2. The second type semiconductor portion S2 is arranged from above the active portion AP to the side of the first type semiconductor portion S1. The second type semiconductor portion S2 may cover at least a portion of the first side surface FS of the first type semiconductor portion S1. The active portion AP includes a nitride semiconductor and emits light in the c-axis direction of the active portion AP.

[0186] In the manufacturing method of the light-emitting element in Example 5, a first-type semiconductor portion S1 may be formed on the template substrate 7, and then a plurality of trenches TR may be formed in the first-type semiconductor portion S1. The first-type semiconductor portion S1 may have a base semiconductor portion S11 and a first-type portion S12 that includes a regrowth layer (for example, a buffer layer containing an n-type GaN semiconductor) formed on the base semiconductor portion S11.

[0187] Generally, when the element is separated by dry etching after the formation of the active platen (AP), the sides of the chip may suffer physical and chemical damage from the etchant's ionic atoms. When the chip size is around 20 μm or less, the ratio of side damage to the light-emitting region of the chip increases. Therefore, side damage to the active platen can become severe.

[0188] In contrast, in Example 5, a trench TR is formed to divide the first type semiconductor portion S1 before the formation of the active portion AP, and etching for device division is not required after the formation of the active portion AP. This improves the condition of the sides of the active portion AP and the second type semiconductor portion S2.

[0189] The active part AP includes the light-emitting part LS, and the entire light-emitting part LS may overlap with the second part B2 (low defect part SD) in a plan view. The size Ly of one side of the light-emitting part LS may be small in order to avoid etching damage to the active part AP. The size Ly of one side of the light-emitting part LS (for example, a side perpendicular to an adjacent trench TR) may be 80 μm or less, 40 μm or less, 20 μm or less, 10 μm or less, or 5 μm or less.

[0190] The etching of the first type semiconductor portion S1 is dry etching, and this dry etching may be stopped at the mask portion 5. In this case, the mask portion 5 functions as an etching stopper, and the mask portion 5 is exposed at the bottom of the trench TR. In this case, it is not necessarily required that the etching stops on the surface of the mask portion 5; it is sufficient if the etching stops within the mask portion 5. The mask portion 5 is formed of a material that is less etchable than the first type semiconductor portion S1, and a part of the mask portion 5 may be etched as long as it can perform its role in stopping the etching.

[0191] As the raw material enters the space of the gap GP and trench TR, the second type semiconductor portion S2 can be formed from above the active portion AP, extending to the side of the first side surface FS and the side of the second side surface SS in the first type semiconductor portion S1. In Example 5, the second type semiconductor portion S2 may be formed so as to extend to the side of the end face 20F (see Figure 2) of the light-emitting element 20 in the first type semiconductor portion S1.

[0192] Subsequently, the second type semiconductor portion S2, the active portion AP, and a part of the first type semiconductor portion S1 are etched away to expose a part of the upper surface of the first type semiconductor portion S1. The third side surface TS does not need to be covered by the second type semiconductor portion S2. Then, the first electrode E1 and the second electrode E2 are formed. This forms the light-emitting body 20. The subsequent steps may be the same as those in Example 1 described above.

[0193] (Alternative configuration example 5) (5A) In another example of Example 5, the laminate LB may be divided into a plurality of light-emitting elements 20 by forming the open groove GS after forming the first type semiconductor part S1, the active part AP, and the second type semiconductor part S2. The open groove GS may be formed by cleavage. The open groove GS may also be a trench TR formed by etching.

[0194] (5B) Figure 37 is a schematic plan view showing a method for manufacturing a light-emitting element in another example of Example 5. As shown in Figure 37, at least one of the plurality of trenches TR formed in the first type semiconductor part S1 removes the portion on the opening K in the first type semiconductor part S1 (dislocation inheritance part HD), and the active part AP and the second type semiconductor part S2 are formed on the first type semiconductor part S1 having a low defect part SD.

[0195] After forming the active portion AP and the type 2 semiconductor portion S2, an anchor film AF may be formed on the template substrate 7 so as not to change the position of the laminate LB. For example, by using a resist mask, the anchor film AF can be deposited over the entire surface by sputtering or EB (Electron Beem Deposition), and then the resist mask can be removed to lift off any unwanted portions of the anchor film AF.

[0196] (5C) In Example 5, an LED element in which the light-emitting element 30 emits light in the c-axis direction of the active part AP was described as an example, but the example is not limited to this. In another example of Example 5, the light-emitting element 30 may be a surface-emitting semiconductor laser element (VCSEL: a vertical cavity surface-emitting laser element) that emits light in the c-axis direction of the active part AP.

[0197] [Example 6] Figure 38 is a schematic plan view showing the method for manufacturing a light-emitting element in Example 6. In Example 1 and others, the base semiconductor portion S11 was formed by the ELO method. However, the invention is not limited to this, and in the method for manufacturing a light-emitting element in one embodiment of the present disclosure, a sapphire substrate may be used as the base substrate BK, and a semiconductor layer containing a nitride semiconductor may be formed planarly on the sapphire substrate. The semiconductor substrate 10 does not necessarily have a mask 6 on the GaN substrate.

[0198] In this specification, to distinguish it from the base semiconductor portion S11 formed by the ELO method, the semiconductor portion formed by a general method is referred to as the semiconductor portion SG. The semiconductor portion SG is, for example, a semiconductor layer containing a general nitride semiconductor that is epitaxially grown in the longitudinal direction on a growth substrate.

[0199] As shown in Figure 38, for example, a plurality of bar-shaped semiconductor portions SG can be formed by etching away a portion of the semiconductor portion SG on the semiconductor substrate 10. The semiconductor portion SG may be used as the first type semiconductor portion S1, or a first type semiconductor portion S1 including the semiconductor portion SG and the first type portion S12 may be formed by appropriately forming the first type portion S12 on the semiconductor portion SG. As a result, the first type semiconductor portion S1 has a first side surface FS.

[0200] Next, an active portion AP is formed above the first type semiconductor portion S1. Then, a second type semiconductor portion S2 is formed, positioned from above the active portion AP to the side of the first type semiconductor portion S1. If the light-emitting body 20 is, for example, a laser body, a ridge portion RJ is formed, and the second type semiconductor portion S2, the active portion AP, and a part of the first type semiconductor portion S1 are etched away to expose a part of the upper surface of the first type semiconductor portion S1. Then, the first electrode E1 and the second electrode E2 are formed. Subsequent steps can be carried out in the same manner as in the above-described example 1, etc. Therefore, a detailed explanation with illustrations is omitted.

[0201] The light-emitting element 20 may be removed from the base substrate BK by various methods, for example, by a laser lift-off method. Alternatively, a fragile layer (boron nitride) may be formed between the base substrate BK and the semiconductor portion SG to facilitate mechanical peeling. A sacrificial layer (InGaN) may also be formed to enable lift-off by photoelectrochemical etching.

[0202] [Additional notes] The inventions described herein have been explained above based on the drawings and examples. However, the inventions described herein are not limited to the embodiments and examples described above. That is, the inventions described herein can be modified in various ways within the scope shown in this disclosure, and embodiments obtained by appropriately combining the technical means disclosed in different embodiments and examples are also included in the technical scope of the inventions described herein. In other words, it should be noted that it is easy for those skilled in the art to make various modifications or alterations based on this disclosure. Furthermore, it should be noted that these modifications or alterations are included in the scope of this disclosure. [Explanation of Symbols]

[0203] 1 Main board 5 Mask section 6 masks 7. Template board 10 Semiconductor substrates 20 Luminous elements 30 light-emitting elements AP active part BK base board CA bonding material (conductive bonding material) CA1 1st bonding material (conductive bonding material) CA2 2nd bonding material (conductive bonding material) DF insulating film E1 1st electrode E2 2nd electrode FS 1st side S1 Type 1 Semiconductor Section S11 Base Semiconductor Section S12 1st mold section S2 2nd type semiconductor section SS second side ST support

Claims

1. A light-emitting body comprising: a first type semiconductor portion having a first surface and having first type conductivity; an active portion located below the first type semiconductor portion; and a second type semiconductor portion having second type conductivity and arranged to extend from below the active portion to the side of the first type semiconductor portion; conductive bonding material, The light-emitting element is supported by a support located below the light-emitting element and such that the first type semiconductor portion is located above the active portion, via the conductive bonding material. The second type semiconductor section includes a ridge, The first type semiconductor portion has a wing portion that is closer to the first side surface than the central portion in the a-axis direction of the first type semiconductor portion and has a smaller penetration dislocation density than the central portion. The aforementioned ridge overlaps with the aforementioned wing portion in a plan view. Between the support and the first type semiconductor portion of the light-emitting body, the direction in which the first type semiconductor portion, the active portion, and the second type semiconductor portion are stacked is defined as the stacking direction. The conductive bonding material is positioned upstream along the second type semiconductor portion in the stacking direction from the position between the support and the light-emitting element, A light-emitting element, wherein the upper end of the conductive bonding material extending upstream along the second type semiconductor portion is located above the boundary between the lower surface of the first type semiconductor portion and the active portion in the stacking direction, and below the upper end of the second type semiconductor portion located to the side of the first type semiconductor portion.

2. The light-emitting element according to claim 1, wherein the second type semiconductor portion is thinner than the first type semiconductor portion.

3. The second type semiconductor portion is in contact with the first side surface, as described in claim 1.

4. The light-emitting element according to claim 1, wherein the conductive bonding material is composed of a conductive material having at least one of the properties of heat-fluidity, pressure-curability, thermosetting, and photocurability.

5. The light-emitting element according to claim 1, wherein the first type semiconductor portion is an n-type semiconductor portion and the second type semiconductor portion is a p-type semiconductor portion.

6. The light-emitting element according to claim 1, wherein the first side surface is one of two side surfaces facing each other in the a-axis direction of the first type semiconductor portion.

7. The first type semiconductor portion has a second side surface which is the other of the two sides, The light-emitting element according to claim 6, wherein the second type semiconductor portion is arranged to extend from below the active portion to the side of the first side surface of the first type semiconductor portion and to the side of the second side surface.

8. The first side surface includes an inclined surface, The light-emitting element according to claim 1, wherein the second type semiconductor portion covers the inclined surface.

9. The active portion includes a nitride semiconductor, The light-emitting element according to claim 1, wherein the light-emitting element includes at least a portion of the first type semiconductor portion, the active portion, and the second type semiconductor portion, and has an optical resonator including a pair of resonator end faces.

10. The light-emitting element according to claim 9, wherein the first side surface is closer to the ridge than the second side surface on the opposite side.

11. The first type semiconductor portion and the second type semiconductor portion include a nitride semiconductor. The light-emitting element according to claim 9 or 10, wherein each of the pair of resonator end faces is an m-plane of a nitride semiconductor.

12. The light-emitting element according to claim 11, wherein the active portion includes a light-emitting portion located below the wing portion.

13. The active portion includes a nitride semiconductor, The light-emitting element according to any one of claims 1 to 8, wherein the active portion emits light in the c-axis direction.

14. The light-emitting element according to any one of claims 1 to 10, further comprising an insulating film covering the portion of the second type semiconductor part that wraps around onto the first side surface.

15. The first type semiconductor portion includes a nitride semiconductor, The light-emitting element according to any one of claims 1 to 10, wherein the first side surface is composed of a crystal plane.

16. The first type semiconductor portion comprises a GaN-based semiconductor, as described in any one of claims 1 to 10.

17. An anode is provided below the second type semiconductor section. The light-emitting element according to claim 5, wherein a cathode is provided above the first type semiconductor portion.

18. The first type semiconductor portion has an exposed portion below which the second type semiconductor portion is not located. An anode is provided below the second type semiconductor section. The light-emitting element according to claim 5, wherein a cathode is provided below the exposed portion.

19. The first type semiconductor portion, the active portion, and the second type semiconductor portion each include a nitride semiconductor, The light-emitting body includes at least a portion of the first type semiconductor portion, the active portion, and the second type semiconductor portion, and has an optical resonator including a pair of resonator end faces. Each of the pair of resonator end faces is an m-plane of a nitride semiconductor, The light-emitting element according to claim 17 or 18, wherein the resonant length of the optical resonator is 200 μm or less.

20. The light-emitting element according to claim 19, wherein the length of the anode is shorter than the length of the resonator in the direction of the resonator length of the optical resonator.

21. The anode includes a contact electrode that overlaps with and is in contact with the ridge in planar perspective, and an auxiliary electrode that covers the contact electrode, The insulating film further covers the side surface of the ridge and is located at least between the auxiliary electrode and the second type semiconductor portion, The light-emitting element according to claim 20, wherein the length of the insulating film in the direction of the resonator length of the optical resonator is shorter than the resonator length.

22. A step of preparing a semiconductor substrate in which a first type semiconductor portion having a first side surface is formed on a base substrate, A step of forming an active portion above the first type semiconductor portion, A step of forming a second type semiconductor portion that is arranged from above the active portion to the side of the first type semiconductor portion, The process of preparing the support substrate, The process includes a step of bonding a light-emitting body, which includes at least a portion of the first type semiconductor portion, the active portion, and the second type semiconductor portion, to the support substrate via a conductive bonding material such that the first type semiconductor portion is positioned above the active portion. Between the support substrate and the first type semiconductor portion of the light-emitting body, the direction in which the first type semiconductor portion, the active portion, and the second type semiconductor portion are stacked is defined as the stacking direction. By joining the light-emitting element to the support substrate, The conductive bonding material is positioned upstream along the second type semiconductor portion in the stacking direction from the position between the support substrate and the light-emitting element, A method for manufacturing a light-emitting element, wherein the upper end of the conductive bonding material extending upstream along the second type semiconductor portion is located above the boundary between the lower surface of the first type semiconductor portion and the active portion in the stacking direction, and below the upper end of the second type semiconductor portion located to the side of the first type semiconductor portion.

23. A step of preparing a semiconductor substrate in which a first type semiconductor portion, an active portion, and a second type semiconductor portion are formed in this order on a base substrate, A step of forming an insulating film on at least one side surface of the first type semiconductor portion, the active portion, and the second type semiconductor portion, The process of preparing the support substrate, The process includes a step of bonding a light-emitting body, which includes at least a portion of the first type semiconductor portion, the active portion, and the second type semiconductor portion, to the support substrate via a conductive bonding material such that the first type semiconductor portion is positioned above the active portion. Between the support substrate and the first type semiconductor portion of the light-emitting body, the direction in which the first type semiconductor portion, the active portion, and the second type semiconductor portion are stacked is defined as the stacking direction. By joining the light-emitting element to the support substrate, The conductive bonding material is positioned from the position between the support substrate and the light-emitting element, extending upstream in the stacking direction along the insulating film on the side surface of the second type semiconductor portion. A method for manufacturing a light-emitting element, wherein the upper end of the conductive bonding material extending upstream along the insulating film is located above the boundary between the lower surface of the first type semiconductor portion and the active portion in the stacking direction, and below the upper end of the second type semiconductor portion located to the side of the first type semiconductor portion.

24. A method for manufacturing a light-emitting element according to claim 22 or 23, comprising the step of separating the light-emitting element from the base substrate.

25. The method for manufacturing a light-emitting element according to claim 22, further comprising the step of dividing the active portion into a plurality of parts after forming the second type semiconductor portion, such that the cross-sections are parallel to the thickness direction of the active portion and intersect with the first side surface.

26. The method for manufacturing a light-emitting element according to claim 23, further comprising the step of dividing the active portion into a plurality of parts after forming the insulating film, such that the cross-sections are parallel to the thickness direction of the active portion and intersect with the side surface.

27. An apparatus for manufacturing a light-emitting element, which performs each of the steps described in claim 22 or 23.

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