Method and system for temperature control of a substrate

Abstract

To provide a system and a method, each for controlling a temperature of a substrate support assembly.SOLUTION: A main power source 156 is supplied to heating elements 154A, 154B, and 140 that are embedded into a zone of a substrate support assembly 136 included in a processing chamber, a voltage applied to a heating element and a current passing through the heating element are measured. A temperature of the zone of the substrate support assembly is identified on the basis of the voltage applied to the heating element and the current passing through the heating element. A temperature difference between the temperature of the identified zone and a target temperature of the zone is identified. An auxiliary power source 142 supplied for the heating element in order to achieve the target temperature is identified on the basis of partially at least the temperature difference, and is supplied to the heating element in order to correct the temperature of the zone to the target temperature.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to the manufacture of electronic devices, and more particularly, to systems for temperature control of substrates and methods of using the same.

Background Art

[0002]

[0002] As a result of inadequate temperature control of the substrate and / or the environment surrounding the substrate, defects can occur during processing of the substrate. For example, during an etching process, a temperature difference across the surface of the substrate can result in a non-uniform amount of material being etched across the surface of the substrate. In another example, during a deposition process, a temperature difference across the surface of the substrate can result in the material being deposited non-uniformly across the surface of the substrate. The accuracy of temperature measurement contributes to the ability to accurately control the temperature of the substrate. Current techniques rely on temperature sensors (e.g., thermocouples) embedded within a substrate support assembly that supports the substrate during processing to identify the temperature of the substrate. However, delays and other defects in the transmission of feedback information from the embedded temperature sensors impede accurate real-time measurement of the temperature of the substrate. Further, a typical substrate support assembly has fewer embedded temperature sensors than zones of the substrate support assembly. For example, a substrate support assembly can include five or more zones and about two embedded temperature sensors. As a result, one embedded temperature sensor is relied upon to measure the temperature of two or more zones of the substrate support assembly, which impedes accurate real-time temperature measurement for each zone of the substrate support assembly.

Summary of the Invention

[0003]

[0003] Some of the embodiments described cover a method comprising supplying a first direct current (DC) power to a heating element embedded in a zone of a substrate support assembly contained within a processing chamber. The method further includes measuring a voltage across the heating element and a current flowing through the heating element. The method further includes determining the temperature of a zone in the substrate support assembly based on the voltage across the heating element and the current flowing through the heating element. The method further includes determining a second DC current to supply to the heating element to achieve a target temperature. The method further includes supplying the second DC current to the heating element to correct the temperature of the zone to a target temperature.

[0004]

[0004] In some embodiments, the apparatus includes a DC power supply operably coupled to a heating element embedded in a zone of a substrate support assembly contained within a processing chamber. The apparatus further includes a controller operably coupled to the heating element and the DC power supply. The controller is configured to cause the DC power supply to perform a first DC power to the heating element. The controller is further configured to measure a voltage across the heating element and a current flowing through the heating element. The controller is further configured to determine the temperature of a zone of the substrate support assembly based on the voltage across the heating element and the current flowing through the heating element. The controller is further configured to determine a target temperature for the zone based on the determined temperature of the zone. The controller is further configured to determine a second DC current to supply to the heating element to achieve the target temperature. The controller is further configured to cause the DC power supply to perform a second power to the heating element to correct the temperature of the zone to the target temperature.

[0005]

[0005] In some embodiments, the electronic device manufacturing system includes a processing chamber including a substrate support assembly. The substrate support assembly includes one or more heating elements, each embedded within a zone of the substrate support assembly. The electronic device manufacturing system further includes a DC power supply configured to supply DC power to each heating element. The electronic device manufacturing system further includes a controller operably coupled to each heating element, the DC power supply, and a system controller. The controller is configured to cause the DC power supply to supply a first DC power to one of the one or more heating elements embedded within a corresponding zone of the substrate support assembly. The controller is further configured to measure a voltage across the heating element and a current through the heating element. The controller is further configured to determine the temperature of the corresponding zone of the substrate support assembly based on the voltage across the heating element and the current through the heating element. The controller is further configured to determine a target temperature for the corresponding zone based on the determined temperature of the corresponding zone. The controller is further configured to determine a second DC power to supply to the heating element to achieve the target temperature. The controller is further configured to cause the DC power supply to deliver a second power to the heating element in order to correct the temperature of the corresponding zone to a target temperature.

[0006]

[0006] This disclosure is described only as a non-limiting example with reference to the accompanying drawings, in which similar elements are indicated by similar reference numerals. Different references to “an” or “one” embodiments in this disclosure do not necessarily refer to the same embodiment, but such references mean at least one. [Brief explanation of the drawing]

[0007] [Figure 1]

[0007] This is a schematic cross-sectional side view of a processing chamber having one embodiment of a substrate support assembly according to an aspect of the present disclosure. [Figure 2]

[0008] This is a schematic side view of a partial cross-section showing in detail a portion of a substrate support assembly according to an aspect of the present disclosure. [Figure 3]

[0009] This is a schematic side view of a partial cross-section of a substrate support assembly connected to a temperature controller according to an aspect of the present disclosure. [Figure 4]

[0010] This is a flowchart of a method for controlling the temperature of zones in a substrate support assembly according to an aspect of the present disclosure. [Figure 5]

[0011] This is a flowchart of a method for determining the temperature of zones in a substrate support assembly according to an aspect of the present disclosure. [Figure 6]

[0012] This is a flowchart of a method for determining the DC power supplied to the heating element of a substrate support assembly according to an aspect of the present disclosure. [Figure 7]

[0013] This is a flowchart of a method for recalibrating the relationship between the resistance of a specified heating element and the temperature of a zone containing the heating element, according to an aspect of the present disclosure. [Figure 8]

[0014] This is a block diagram showing a computer system according to a specific embodiment. [Modes for carrying out the invention]

[0008]

[0015] Embodiments described herein provide a temperature controller for controlling the temperature of a substrate being processed in a processing chamber. The temperature controller may be configured to supply power to one or more heating elements embedded within a substrate support assembly that supports the substrate during processing. The one or more heating elements may be embedded within zones of the substrate support assembly. Each zone may correspond to a portion of the substrate. The temperature controller may increase, decrease, or maintain the amount of power supplied to the one or more heating elements in order to heat the one or more zones to a target temperature.

[0009]

[0016] In some embodiments, the temperature controller may include a power rectifier. The temperature controller may be connected to one or more power sources. In some embodiments, the power source may be an alternating current (AC) power source. In such embodiments, the power rectifier of the temperature controller can convert the AC power received from the AC power source into direct current (DC) power and transmit the DC power to one or more heating elements. In other or similar embodiments, the power source may be a DC power source. The temperature controller 190 may facilitate the transmission of DC power from the DC power source to one or more heating elements.

[0010]

[0017] A power control module may measure the voltage across a heating element and / or the current flowing through it when power is transmitted to the heating element. The measured voltage and current can be used to determine the resistance of the heating element. A temperature controller may determine the temperature of the heating element based on its resistance. Based on the determined temperature of the heating element, the power control module may further determine the temperature of a zone in the substrate support assembly containing the heating element. The determined temperature of a zone may correspond to the temperature of a portion of the substrate.

[0011]

[0018] A system controller may control one or more operating conditions of a process in a processing chamber based on a process recipe. Modification of the operating conditions may change the temperature of a portion of the substrate. In some embodiments, the system controller may provide an instruction to the temperature controller that the operating conditions should be modified by the system controller from a first setting to a second setting. The temperature controller may use a temperature model to determine whether the modification of the operating conditions will change the temperature of a portion of the substrate. If it is determined that the modification to the second setting will change the temperature of a portion of the substrate, the temperature controller may modify the amount of power supplied to one or more heating elements of the substrate support assembly in order to maintain the temperature of the portion of the substrate at a target temperature. In some embodiments, the temperature controller may provide feedback control of one or more heating elements. For example, the temperature controller may modify the amount of power supplied to one or more heating elements before modifying the operating conditions. In other or similar embodiments, the temperature controller may provide feedback control of one or more heating elements. For example, the temperature controller may modify the amount of power supplied simultaneously with the modification of the operating conditions.

[0012]

[0019] Embodiments of the present disclosure address the aforementioned shortcomings of the current art by providing a temperature controller that can obtain accurate, real-time temperature measurements of any heating element embedded within a substrate support assembly. Temperature measurements can be obtained more quickly and with less delay than temperature measurements from conventional temperature sensors. For example, conventional temperature sensors are positioned at a distance from the heating element being measured. In such systems, it takes time for heat to propagate from the heating element to the temperature sensor. In contrast, embodiments described herein provide a system that uses the properties of the heating element itself to detect the temperature of the heating element. This provides substantially instantaneous feedback of the heating element's temperature.

[0013]

[0020] By providing a system that can obtain temperature measurements more quickly and with less delay, heating elements and / or zones in substrate support assemblies contributing to defects can be identified and corrected more quickly. For example, a zone in a substrate support assembly may heat a portion of the substrate below the target temperature, thereby hindering a uniform etching process across the entire surface of the substrate. A temperature controller can more quickly identify a zone in a substrate support assembly that is heating the substrate below the target temperature and cause one or more heating elements within that zone to more quickly raise the substrate temperature to the target temperature. By more quickly identifying the heating elements and / or zones that need to be corrected to fix defects, the target temperature in the process recipe can be maintained more accurately throughout the process, thereby reducing the number of defects across the entire substrate. Furthermore, in some embodiments, individual temperature sensors may be omitted, reducing the complexity and / or cost of heaters and / or electrostatic chucks. In addition, the temperature module described herein can be used to provide diagnostics for heating elements. For example, the temperature module can be used alone or in conjunction with additional temperature sensors to identify drift in the resistance of heating elements and / or identify faulty heating elements.

[0014]

[0021] Furthermore, by transmitting DC power to the heating element instead of AC power, more accurate measurements of the voltage and current associated with the heating element can be obtained than those obtained using AC power. By obtaining more accurate measurements of voltage and current, more accurate temperature measurements can be obtained for the heating element and / or the zone containing the heating element. As mentioned above, by obtaining more accurate temperature measurements for the heating element and / or the zone containing the heating element, the heating element and / or zone can be corrected more quickly to heat the zone to the target temperature and reduce the number of board defects. Reducing the number of board defects reduces the total amount of errors in the system and improves the overall system latency.

[0015]

[0022] Figure 1 is a schematic cross-sectional side view of a processing chamber 100 according to an aspect of the present disclosure. The processing chamber 100 may be, for example, a plasma processing chamber, an etching processing chamber, an annealing chamber, a physical vapor deposition chamber, a chemical vapor deposition chamber, an ion implantation chamber, or another type of processing chamber. The processing chamber 100 includes a chamber body 102 which may be grounded. The chamber body 102 includes walls 104, a bottom 106, and a lid 108, which surround an internal space 124. A substrate support assembly 126 is located within the internal space 124 and supports a substrate 134 during processing.

[0016]

[0023] The wall 104 of the processing chamber 100 may include an opening (not shown). Through this opening, the substrate 134 can be moved in and out of the internal space 124 by a robot. A pumping port 110 is formed in either the wall 104 or the bottom 106 of the chamber body 102 and is fluidly connected to a pumping system (not shown). The pumping system can maintain a reduced pressure environment within the internal space 124 of the processing chamber 100 and remove processing by-products from the processing chamber.

[0017]

[0024] A gas panel 112 may supply process gas and / or other gases to the internal space 124 of the processing chamber 100 through one or more inlet ports 114 formed through at least one of the lid 108 or wall 104 of the chamber body 102. The process gas supplied by the gas panel 112 is excited within the internal space 124 to generate plasma 122, which is used to process a substrate 134 placed on a substrate support assembly 126. The process gas may be excited by RF power inductively coupled to the process gas from a plasma applicator 120 located outside the chamber body 102. Alternatively or further, the plasma may be generated within the internal space 124 of the processing chamber 100. In one embodiment depicted in Figure 1, the plasma applicator 120 is a pair of coaxial coils coupled to an RF power supply 116 via a matching circuit 118.

[0018]

[0025] The substrate support assembly 126 generally includes at least one substrate support 132. The substrate support 132 can be a vacuum chuck, an electrostatic chuck, a susceptor, or other workpiece support surface. In one embodiment of FIG. 1, the substrate support 132 is an electrostatic chuck and will be hereinafter described as the electrostatic chuck 132 herein. The substrate support assembly 126 can also include a cooling base 130. The cooling base 130 can alternatively be separated from the substrate support assembly 126. The substrate support assembly 126 can be detachably coupled to the support pedestal 125. The support pedestal 125, which can include a pedestal base 128 and an equipment plate 180, is attached to the chamber body 102. The substrate support assembly 126 can be periodically removed from the support pedestal 125 to enable replacement of one or more components of the substrate support assembly 126.

[0019]

[0026] The equipment plate 180 is configured to accommodate one or more drive mechanisms configured to raise and lower a plurality of lift pins. Further, the equipment plate 180 is configured to accommodate fluid connections from the electrostatic chuck 132 and the cooling base 130. The equipment plate 180 is also configured to accommodate electrical connections from the electrostatic chuck 132 and the heater assembly 170. Numerous connections extend external or internal to the substrate support assembly 126, and the equipment plate 180 can provide an interface for the connections at each end.

[0020]

[0027] The electrostatic chuck 132 has an attachment surface 131 and a workpiece surface 133 opposite to the attachment surface 131. The electrostatic chuck 132 generally includes a chuck electrode 136 embedded in a dielectric 150. The chuck electrode 136 can be configured as a unipolar or bipolar electrode, or other suitable arrangement. The chuck electrode 136 can be coupled via an RF filter 182 to a chuck power supply 138 that provides high-frequency (RF) or direct current (DC) power for electrostatically fixing the substrate 134 to the upper surface of the dielectric 150. The RF filter 182 prevents the RF power utilized to generate the plasma 122 within the processing chamber 100 from damaging electrical equipment or causing an electrical interference outside the chamber. The dielectric 150 can be manufactured from a ceramic material such as AlN or Al2O3. Alternatively, the dielectric 150 can be manufactured from a polymer such as polyimide, polyether ether ketone, polyaryl ether ketone. In some cases, the dielectric is coated with a plasma-resistant ceramic coating such as yttria (Yttria) or Y3Al5O 12 (YAG).

[0021]

[0028] The workpiece surface 133 of the electrostatic chuck 132 can include a gas passage (not shown) for providing a backside heat transfer gas to a gap space defined between the substrate 134 and the workpiece surface 133 of the electrostatic chuck 132. The electrostatic chuck 132 can also include lift pin holes (both not shown) for accommodating lift pins for lifting the substrate 1 up above the workpiece surface 133 of the electrostatic chuck 132 to facilitate robotic transfer into and out of the processing chamber 100.

[0022]

[0029] The temperature-controlled cooling base 130 is coupled to a heat transfer fluid source 144. The heat transfer fluid source 144 provides a heat transfer fluid, such as a liquid, gas, or a combination thereof. These fluids are circulated through one or more conduits 160 located within the cooling base 130. The fluids flowing through adjacent conduits 160 are separable, allowing for localized control of heat transfer between the electrostatic chuck 132 and various regions of the cooling base 130, thereby assisting in the control of the horizontal temperature profile of the substrate 134.

[0023]

[0030] A fluid distributor (not shown) may be fluid-coupled between the outlet of the heat transfer fluid source 144 and the temperature-controlled cooling base 130. The fluid distributor operates to control the amount of heat transfer fluid supplied to the conduit 160. The fluid distributor may be located outside the processing chamber 100, inside the substrate support assembly 126, inside the pedestal base 128, or in another suitable location.

[0024]

[0031] The heater assembly 170 may include one or more main resistance heating elements 154 and / or a number of auxiliary heating elements 140 embedded within the body 152 of the heater assembly 170 or within the electrostatic chuck 132. In one illustrated embodiment, the main resistance heating element 154 is positioned above the auxiliary heating elements 140. However, it should be understood that the auxiliary heating elements 140 may further or alternatively be located on the same plane as the main resistance heating element 154 and / or above the main resistance heating element 154. In one embodiment, the body 152 is a flexible polyimide or other flexible polymer. In another embodiment, the body is a ceramic such as AlN or Al2O3. In some embodiments, the body 152 has a disc shape.

[0025]

[0032] The primary resistance heating element 154 may be provided to raise the temperature of the substrate support assembly 126 and the supported substrate 134 to a temperature specified in the process recipe. The auxiliary heating element 140 may provide local adjustments to the temperature profile of the substrate support assembly 126 generated by the primary resistance heating element 154. Thus, the primary resistance heating element 154 operates on a globalized macroscale, while the auxiliary heating element operates on a localized microscale.

[0026]

[0033] The heater assembly 170 may include a plurality of heating zones (referred to herein as zones). Each zone may be heated by at least one principal resistance heating element 154 and / or at least one auxiliary heating element 140 embedded within the respective zone. In some embodiments, each zone may include one principal resistance heating element 154 and one or more auxiliary heating elements 140. In other or similar embodiments, each zone may include a plurality of principal resistance heating elements 154 and a plurality of auxiliary heating elements 140. In some embodiments, a plurality of zones may be associated with the same principal resistance heating element 154. The heater assembly 170 may include several heating zones, ranging from two to several hundred (for example, 150 or 200 heating zones in some embodiments). Each zone of the heater 170 may correspond to a portion of the substrate 134. For example, the first zone can heat a first portion of the substrate 134 to a first temperature, and the second zone can heat a second portion of the substrate 134 to a second temperature.

[0027]

[0034] In one embodiment of the two-zone configuration of the main resistance heating element 154, the substrate 134 can be heated using the main resistance heating element 154 to a temperature suitable for processing with a variation of approximately + / - 10 degrees Celsius from one zone to another. In another embodiment of the four-zone configuration of the main resistance heating element 154, the substrate 134 can be heated using the main resistance heating element 154 to a temperature suitable for processing with a variation of approximately + / - 1 degree Celsius within a specific zone. Each zone may vary from adjacent zones, from approximately 0 degrees Celsius to approximately 20 degrees Celsius, depending on the process conditions and parameters. In some cases, a variation of 0.5 degrees Celsius in the surface temperature of the substrate 134 can result in a difference of about 1 nanometer in the formation of internal structures. The surface temperature profile of the substrate generated by the main resistance heating element 154 can be improved by using the auxiliary heating element 140 to reduce the variation in the temperature profile to approximately + / - 0.3 degrees Celsius. To obtain the desired result, the auxiliary heating element 140 can be used to make the temperature profile uniform across the substrate 134 or to change it precisely in a predetermined manner.

[0028]

[0035] In one embodiment, the heater assembly 170 is contained within the electrostatic chuck 132. In other or similar embodiments, the main resistance heating element 154 and / or auxiliary heating element 140 are formed within the electrostatic chuck 132. In such an embodiment, the substrate support assembly 126 may be formed without the heater assembly 170, with the electrostatic chuck 132 positioned directly on the cooling base 130.

[0029]

[0036] The main resistive heating element 154 may be coupled to the temperature controller 190 via an RF filter 184. In some embodiments, an auxiliary heating element 140 may be coupled to the temperature controller 190 via an RF filter 186. The temperature controller 190 may include a power rectifier 192 and a power control module 194. The temperature controller 190 may be operably coupled to a main power supply 156 and an auxiliary power supply 142. In some embodiments, the main power supply 156 may provide the main heating element 154 with 900 watts or more of power. In some embodiments, the auxiliary power supply 142 may provide the auxiliary heating element 140 with 10 watts or less of power. In other or similar embodiments, the auxiliary power supply 142 may also provide the auxiliary heating element 140 with 900 watts or more of power. In some embodiments, the power supplied by the auxiliary power supply 142 is an order of magnitude less than the power supplied by the main power supply 156 of the main resistive heating element 154. Although the main power supply 156 and the auxiliary power supply 142 are shown as separate components with respect to Figure 1, in some embodiments the main power supply 156 and the auxiliary power supply 142 are contained within a single component. In other or similar embodiments, the main power supply 156 and the auxiliary power supply 142 are contained within the temperature controller 190.

[0030]

[0037] In some embodiments, the auxiliary heater power supply 142 and / or the main heater power supply 156 each provide alternating current (AC) power to the auxiliary heating element 140 and / or the main heating element 154 (collectively referred to herein as heating elements 154 and 140). In such embodiments, a power rectifier 192 may be configured to convert the AC power provided by the auxiliary power supply 142 and / or the main power supply 156 into DC power. In some embodiments, the power rectifier 192 is a single-phase rectifier, a three-phase rectifier, or another type of rectifier. In other or similar embodiments, the auxiliary power supply 142 and / or the main power supply 156 provide DC power to the heating elements 154 and 140. In such embodiments, the power rectifier 192 may be configured to facilitate the transmission of DC power to the heating elements 154 and 140.

[0031]

[0038] The power control module 194 may be configured to increase or decrease the amount of power supplied to the heating elements 154, 140. The power control module 194 may be, for example, a proportional-integral-derivative (PID) controller. In some embodiments, the power control module 194 may measure the voltage across one or more heating elements 154, 140. The power control module 194 may further measure the current flowing through one or more heating elements 154, 140. In such embodiments, the power control module 194 may determine the temperature of the zone containing the heating elements 154, 140 based on the measured voltage and current. In particular, the power control module 194 or system controller 148 may calculate the resistance of the heating elements 154, 140 based on the measured voltage and current across them, according to the following equation: R=V / I Here, R is the resistance of the heating element, V is the voltage across the heating element, and I is the current flowing through the heating element. Each heating element can be calibrated so that its resistance is associated with a temperature value. Thus, once the resistance is calculated for a heating element, the temperature for that heating element associated with the calculated resistance can be determined (for example, by using a reference table or function generated during calibration). The system controller 148 can be connected to the temperature controller 190 via a wired or wireless connection. For example, the system controller 148 may be connected to the temperature controller 190 via an Ethernet (EtherCAT) connection for control automation.

[0032]

[0039] Depending on the temperature of a zone, the power controller 194 may increase or decrease the amount of power transmitted from the power supply (e.g., auxiliary power supply 142, main power supply 156) to the heating element in order to correct the zone temperature to a target temperature. Further details regarding the measurement of voltage and current and the control of power transmitted to the heating element are provided in more detail with reference to Figure 3.

[0033]

[0040] A controller 148 is coupled to the processing chamber 100 to control the operation of the processing chamber 100 and the processing of the substrate 134. The system controller 148 includes a general-purpose data processing system that can be used in industrial settings to control various subprocessors and subcontrollers. Generally, the system controller 148 includes, among other common components, a central processing unit (CPU) 172 that communicates with memory 174 and input / output (I / O) circuits 176. In some embodiments, the system controller 148 controls various states within the processing chamber 100 according to a process recipe. The process recipe may include a series of software commands executed by the CPU during the processing of the substrate 134. For example, software commands executed by the CPU of the system controller 148 cause the processing chamber to introduce an etchant gas mixture (i.e., processing gas) into the internal space 124, generate plasma 122 from the processing gas by applying RF power from a plasma applicator 120, maintain a target temperature, and etch a layer of material on the substrate 134.

[0034]

[0041] The temperature of one or more portions of the surface of the substrate 134 within the processing chamber 100 may be affected by various conditions associated with the process recipe. For example, the temperature of the substrate 134 may be affected by the introduction of the etchant gas mixture into the internal space 124, the exhaust of the process gas by a pump or slit valve door, the generation of plasma 122 from the process gas by the application of RF power, the pressure within the internal space 124 of the processing chamber 100, the etching of layers of material on the substrate 134, and other factors. The cooling base 130, one or more main resistance heating elements 154, and auxiliary heating elements 140 all help to control the surface temperature of the substrate 134.

[0035]

[0042] The power control module 194 may adjust the amount of power supplied to the heating elements 154 and 140 to maintain the temperature of the substrate 134 at a target temperature during processing. Before the system control module 148 executes the process recipe software commands, the power controller 194 may modify the amount of power supplied to the heating elements 154 and 140 to counteract expected temperature changes of the substrate 134 that may occur in response to the execution of the software commands. For example, activating the RF electrodes in the electrostatic chuck 132 may increase the temperature in one or more zones.

[0036]

[0043] The system controller 148 may notify the power control module 194 of software commands to be executed by the system controller 148 according to a process recipe. The power control module 194 may identify the effect of the execution of the software commands on the temperature profile of the substrate 134. The temperature of the substrate 134 may correspond to the temperature of one or more parts of the substrate 134, or the temperature difference between two or more parts of the substrate 134. In some embodiments, the system controller 148 may also identify and / or provide to the power control module 194 instructions on the effect on the temperature and / or temperature profile of the substrate 134 in response to the execution of the software commands. In other or similar embodiments, the power control module 194 may identify the effect on the temperature and / or temperature profile of the substrate 134. For example, the power control module 194 may use a reference table generated during calibration to explore the expected temperature increase or decrease associated with the execution of the command. In another embodiment, the power module may provide the temperature model with the current temperature of zones of the substrate and / or substrate support assembly, and the effect of the operating conditions associated with the software commands. Based on the effect, the power control module 194 or system controller 148 may determine whether to increase, decrease, or maintain the amount of power supplied to one or more of the heating elements 154, 140 in order to maintain the target temperature and / or temperature profile of the substrate 134 after the execution of a software command. In response to receiving an instruction command to increase or decrease the amount of power supplied to one or more of the heating elements 154, 140, or to determining such an increase or decrease, the power control module 194 may increase or decrease the amount of power supplied to each of the heating elements 154, 140. In some embodiments, the power control module 194 may increase or decrease the amount of power supplied to each of the heating elements 154, 140 before the system controller 148 executes a software command. In other or similar embodiments, the power control module 194 may increase or decrease the amount of power supplied to each of the heating elements 154, 140 at the same time that the system controller 148 executes a software command.The temperature and / or temperature profile of the substrate 134 can be maintained at the target temperature when the state of the process chamber is modified according to the process recipe by increasing or decreasing the amount of power supplied to each heating element 154, 140 before or simultaneously with the execution of a software command by the system controller 148. Thus, in some embodiments, the power to the heating elements 154, 140 can be actively adjusted rather than waiting for and responding to temperature changes. Consequently, some embodiments result in improved temperature consistency throughout the process compared to conventional temperature control techniques.

[0037]

[0044] In some embodiments, the main body 152 and / or the electrostatic chuck 132 may further include one or more temperature sensors (not shown). Each temperature sensor can be used to measure the temperature in a zone of the area of ​​the electrostatic chuck 132 associated with the area of ​​the heater assembly 170 and / or the area of ​​the heater assembly 170. In one embodiment, the area may encompass multiple zones (e.g., a single temperature sensor is used for multiple zones). In another embodiment, there is one temperature sensor for each zone. The temperature sensors may provide feedback information to the temperature controller 190 and / or the system controller 148. In some embodiments, the feedback information provided by the temperature sensors can be used to verify the temperature of the heating elements 154, 140 and / or the surface of the substrate, according to the embodiments described above. In other or similar embodiments, the feedback information provided by the temperature sensors can be used to calibrate or recalibrate the relationship between the resistance of the heating elements 154, 140 and the heater temperature, as described in more detail herein. Furthermore, the temperature sensors can be used to identify a faulty heating element.

[0038]

[0045] Figure 2 is a schematic side view of a partial cross-section showing in detail a portion of the substrate support assembly 126 according to an embodiment of the present disclosure. Figure 2 includes portions of the electrostatic chuck 132, cooling base 130, heater assembly 170, and equipment plate 180.

[0039]

[0046] The body 152 of the heater assembly 170 may be manufactured from a polymer such as polyimide or from a ceramic (e.g., aluminum oxide or aluminum nitride). Therefore, the body 152 may be flexible in some embodiments and rigid in other embodiments. The body 152 may generally be cylindrical, but may be formed in other geometric shapes. The body 152 has an upper surface 270 and a lower surface 272. The upper surface 270 faces the electrostatic chuck 132, while the lower surface 272 faces the cooling base 130.

[0040]

[0047] The heating elements 154, 140 may be formed or disposed on or within the body 152 of the heater assembly 170. Alternatively, the heating elements 154, 140 may be formed or disposed on or within the electrostatic chuck 132. The heating elements 154, 140 may be formed by plating, inkjet printing, screen printing, physical vapor deposition, stamping, wire mesh, patterned polyimide flex circuit, chemical and / or metal lamination, or other suitable methods. Vias may be formed within the heater assembly 170 or electrostatic chuck 132 to provide connections from the heating elements 154, 140 to the outer surface of the heater assembly 170 or electrostatic chuck 132. Alternatively or further, a metal layer (not shown) may be formed within the heater assembly 170 or electrostatic chuck 132. Vias may be formed within the heater assembly 170 or electrostatic chuck 132 to provide connections from the heating elements 154, 140 to the metal layer. Further vias may be formed to connect the metal layer to the outer surface of the heater assembly 170 or the electrostatic chuck 132.

[0041]

[0048] The heater assembly 170 may include a plurality of auxiliary heating elements 140, illustrated exemplarily as auxiliary heating elements 140A, 140B, 140C, 140D, etc. The heating elements 154, 140 are generally closed volumes within the heater assembly 170. In this case, one or more heating elements 154, 140 realize heat transfer between the heater assembly 170 and the electrostatic chuck 132. Each auxiliary heating element 140 is positioned laterally across the heater assembly 170 and may define a cell 200 within the heater assembly 170. The cell 200 locally provides additional heat to one or more zones of the heater assembly 170 aligned with the cell 200. The number of auxiliary heating elements 140 formed within the heater assembly 170 can vary. It is intended that there may be at least an order of magnitude more auxiliary heating elements 140 (and cells 200) than the number of main heating elements 154. In one embodiment, where the heater assembly 170 has four main heating elements 154 (defining four zones of the heater assembly 170), there may be more than 40 auxiliary heating elements 140. However, in a given embodiment of a substrate support assembly 126 configured for use with a 300 mm substrate, it is intended that there may be approximately 200, approximately 400, or even more auxiliary heating elements 140.

[0042]

[0049] Similar to the heating elements 154, 140, one or more temperature sensors 141 may be formed or disposed on or within the body 152 or electrostatic chuck 132 of the heater assembly 170. In one embodiment, the temperature sensor 141 is a resistance temperature detector (RTD). Alternatively, the temperature sensor 141 may be a thermocouple. The temperature sensor 141 may be formed by plating, inkjet printing, screen printing, physical vapor deposition, stamping, wire mesh, patterned polyimide flex circuitry, or other suitable method. Each temperature sensor 141 may measure the temperature of one or more zones of the heater assembly 170 to determine the operation of one or more heating elements 154, 140 within that zone. In some embodiments, a single temperature sensor 141 may be used to determine the operation of both the auxiliary heating element 140 and the primary heating element 154.

[0043]

[0050] Each heating element 154, 140 can be independently coupled to a temperature controller 190. In some embodiments, each temperature sensor 141 can be independently coupled to a temperature controller (not shown), such as the temperature controller 190 in Figure 1. The temperature controller 190 can regulate the temperature of each heating element 154, 140 in the heater assembly 170. Alternatively, the temperature controller 190 can regulate the temperature of a group of heating elements 154, 140 within the heater assembly 170. For example, the temperature controller 190 can regulate the temperature of each heating element 154, 140 in a zone of the heater assembly 170 relative to the temperature of each heating element 154, 140 in another zone. The temperature controller 190 can control the amount of power supplied to the heating elements 154, 140 to control the temperature of the zone. For example, the temperature controller 190 can control the temperature of a zone containing each heating element 154, 140 to a target temperature by supplying 10 watts of power to one or more main resistive heating elements 154, 9 watts of power to other main resistive heating elements 154, and 1 watt of power to one or more auxiliary heating elements 140.

[0044]

[0051] Figure 3 is a schematic side view of a partial cross-section of a substrate support assembly 126 connected to a temperature controller 190 according to an embodiment of the present disclosure. As described above, the temperature controller 190 may include at least one of a power rectifier 192 and a power control module 194.

[0045]

[0052] The temperature controller 190 may be operably connected to the power supply 310. In some embodiments, as described with respect to Figure 1, the power supply 310 may include a main power supply 156 and an auxiliary power supply 142. In other or similar embodiments, the main power supply 156 and the auxiliary power supply 142 are separate components and may each be connected separately to the temperature controller 190, as shown in Figure 1. In some embodiments, the power rectifier 192 may be included as a component of the power supply 310 rather than as a component of the temperature controller 190. In other or similar embodiments, the power supply 310 may be included as a component of the temperature controller 190.

[0046]

[0053] As described with respect to Figure 1, the main power supply 156 and the auxiliary power supply 142 may be configured to provide AC power to the main resistive heating element 154 and the auxiliary heating element 140 (collectively referred to as heating elements 154 and 140), respectively. In such embodiments, the power rectifier 192 may be configured to convert the AC power to DC power. In other or similar embodiments, the main power supply 156 and the auxiliary power supply 142 may be configured to provide DC power to the heating elements 154 and 140 according to the embodiments described above.

[0047]

[0054] The power control module 194 may be configured to increase or decrease the amount of power supplied to one or more heating elements 154, 140. The temperature controller 190 may be connected to one or more heating elements 154, 140 via one or more connectors 320. For example, as shown with reference to Figure 3, the temperature controller 190 may be connected to a first main resistance heating element 154a via connector 320a and to a second main resistance heating element 154b via connector 320b. In another embodiment, connector 320a may be connected to a first main resistance heating element 154a and connector 320b may be connected to a first auxiliary heater 140a (not shown). The connector 320 may include several connections suitable for communication between the heating elements 154, 140 and the temperature controller 190. Each connector 320 may be a flat flexible cable such as a cable, individual wires, or ribbon, a mating connector, or other suitable technology for transmitting signals between the resistive heating elements 154, 140 and the temperature controller 190.

[0048]

[0055] Figure 3 shows a temperature controller 190 connected to the first main resistive heating element 154a and the second main resistive heating element 154b, but the temperature controller 190 can be connected to any number of heating elements 154, 140 via any number of connectors 320. For example, the temperature controller 190 can be connected to a single heating element 154, 140 via one or more connectors 320. In such an embodiment, each heating element 154, 140 embedded in the body 152 of the heater assembly 170 can be connected to an individual temperature controller 190. In another embodiment, the temperature controller 190 can be connected to each heating element 154, 140 embedded in a zone of the body 152 of the heater assembly 170 (i.e., the temperature controller 190 controls the power transmitted to each heating element 154, 140 in the zone). In such an embodiment, each heating element 154, 140 embedded in a zone can be connected to a single connector 320 or multiple connectors 320.

[0049]

[0056] The connector 320 may include power leads for each heating element 154, 140 coupled to the connector 320. For example, connector 320a may include two or more separate positive and negative power leads for the main resistive heating element 154a. In some embodiments, each power lead has a switch controlled by a power control module 194. Each switch may be located within the temperature controller 190, within the substrate support assembly 126, or in another suitable location. The switch may be a field-effect transistor or other suitable electronic switch. The switch may provide a simple cycle for the heating elements 154, 140 between energized (active) and de-energized (inactive) states. The connector 320 may provide signals generated by the power control module 194 to control the state of the switch.

[0050]

[0057] The power control module 194 can simultaneously control at least one of the duty cycle, voltage, or duration of power applied to one or more heating elements 154, 140 for other heating elements. For example, the power control module 194 may provide a signal along connector 320a to instruct a switch to allow 90% of the power to pass through and reach the main resistive heating element 154. The power signal controller 194 may increase or decrease the duty cycle, voltage, current, or duration of power applied to one or more heating elements 154, 140 in accordance with the embodiments described above, in response to a specified temperature of the zone containing the heating elements 154, 140, and / or instructions from a software command executed by the system controller 148.

[0051]

[0058] As previously described, the temperature controller 190 can measure the voltage across the heating elements 154, 140 and the current flowing through the heating elements 154, 140. The measured voltage and current can be used to determine the resistance of the heating elements and the temperature of the zone containing the heating elements. In some embodiments, the temperature controller 190 includes one or more sensors (not shown). Each sensor may provide data associated with the heating elements 154, 140. Each sensor may include an electrical device that performs electrical measurements of an electrical supply conductor connected to the heating elements 154, 140 via connector 320. The electrical device may sense the characteristics of the electrical supply conductor (e.g., magnetic fluctuations, current, voltage, etc. within the electrical supply conductor) and convert these characteristics into sensor data. The electrical device may measure sensor data including one or more values ​​from among current, AC magnitude, phase, waveform (e.g., AC waveform, pulse waveform), DC, non-sinusoidal AC waveform, voltage, etc. In alternative embodiments, the sensors are located outside the temperature controller 190 and connected to connectors 320a, 320b.

[0052]

[0059] In some embodiments, the electrical device may include a clamp that clamps around an electrical supply conductor (e.g., via jaws). The electrical device can use the clamp to perform electrical measurements of the electrical supply conductor without making physical contact with the electrical supply conductor. In some embodiments, the electrical device may be one or more of the following: current clamp, current probe, CT clamp, iron vane clamp, Hall effect clamp, Rogowski coil current sensor, etc. In some embodiments, the electrical device includes a first current clamp for clamping around a first service main (e.g., inflow power) and a second current clamp for clamping around a second service main (e.g., outflow power).

[0053]

[0060] The temperature controller 190 can obtain voltage and / or current values ​​for each of the heating elements 154 and 140 by measuring the voltage and current for the DC power transmitted to the heating elements 154 and 140, according to the embodiments described herein. In some embodiments, the temperature controller 190 can obtain voltage and / or current values ​​for the heating elements 154 and 140 without measuring the voltage and current. For example, the temperature controller 190 can receive voltage and / or current values ​​for the heating elements 154 and 140 from another component of the processing system (e.g., the system controller 148). In such embodiments, the temperature controller 190 can determine the resistance values ​​for the heating elements 154 and 140 and the temperature of the zone containing the heating elements 154 and 140, according to the embodiments described herein.

[0054]

[0061] The power controller 194 may include a temperature-specific component 312 and a power-specific component 314. The temperature-specific component 312 may be configured to determine the temperature of a zone containing one or more heating elements 154, 140 based on measured voltage and current values ​​associated with each heating element 154, 140. As previously stated, the temperature-specific component 312 may receive one or more measured voltage and / or current values ​​associated with the heating elements 154, 140. Based on the received measured voltage and / or current values, the temperature-specific component 312 may determine the resistance values ​​associated with the heating elements 154, 140. Based on known relationships between resistance values ​​and zone temperatures, the temperature-specific component 312 may determine the temperature of a zone containing the heating elements 154, 140.

[0055]

[0062] Known relationships between the resistance values ​​of the heating elements 154 and 140 and the zone temperatures of the substrate support assembly 126 can be identified before or during operation of the processing chamber containing the substrate support assembly 126. In some embodiments, the known relationships can be identified by the power control module 194. In other or similar embodiments, the known relationships can be identified by another component in the temperature controller 190 or a component in the system controller 148. For illustrative purposes with respect to Figure 3, it will be described that the known relationships are identified by the temperature-identifying component 312.

[0056]

[0063] A calibration procedure may be performed to determine the relationship between the zone temperature and the resistance values ​​of the heating elements 154, 140 embedded within the zone. The calibration procedure may be performed before or after the start of operation of the processing chamber. During the calibration procedure, the temperature-determining component 312 adjusts the amount of power supplied to the heating elements 154, 140 to generate a series of varying voltage and current measurements for each heating element 154, 140. Each voltage and current measurement may be generated according to the embodiments described above (i.e., power is supplied to the heating elements 154, 140 and voltage and current measurements for the heating elements 154, 140 are received from the sensor 330). Based on each voltage and current measurement, the temperature-determining component 312 may determine the resistance values ​​for each heating element 154, 140.

[0057]

[0064] The temperature-specific component 312 may further generate temperature measurements for a zone containing one or more heating elements 154, 140 when each voltage and current measurement is generated. In some embodiments, the object to be calibrated (e.g., a calibration wafer) may be placed on the surface of the substrate support assembly 126 before the start of the calibration procedure. The calibration wafer may include one or more temperature sensors, in which case each temperature sensor is located within a different portion of the calibration wafer. In some embodiments, each temperature sensor of the calibration wafer may have an accuracy of about 99% or about 99.999%. Each temperature sensor is, in embodiments, associated with one or more portions of the substrate 134. In other or similar embodiments, each temperature sensor corresponds to a zone of the substrate support assembly 136.

[0058]

[0065] When voltage and current measurements are generated for the heating elements 154 and 140 embedded within the zone, temperature measurements are generated from the temperature sensors on the calibration wafer corresponding to the zone. Depending on the determination of the resistance values ​​for the heating elements 154 and 140, the temperature determination component 312 can correlate the determined resistance values ​​with the temperature values ​​of the measured zone.

[0059]

[0066] The temperature-specific component 312 may define relationships between multiple specified resistance values ​​and measured temperature values ​​during the calibration procedure. In some embodiments, the relationships between multiple specified resistance values ​​and measured temperature values ​​may be stored in a data structure such as a reference table. In other or similar embodiments, the relationships between multiple specified resistance values ​​and temperature measurements may be defined as a function. In some embodiments, each heating element is associated with a temperature dataset by its own resistance. In other embodiments, multiple heating elements are associated with a temperature dataset by a shared resistance. For example, each heating element in a zone may be associated with the same temperature dataset.

[0060]

[0067] During the operation of the processing chamber, the temperature-determining component 312 may determine the temperature of a zone based on the specified resistance values ​​of each heating element 154, 140 embedded within the zone, and a known relationship between the resistance values ​​and the zone temperature. For example, the temperature-determining component 312 may determine the previously measured temperature of a zone containing heating elements 154, 140 corresponding to the specified resistance values ​​of heating elements 154, 140 within a data structure that includes the known relationship. In another embodiment, the temperature-determining component 312 may provide the specified resistance values ​​as input values ​​to a function defined by the known relationship and obtain the zone temperature as an output value. The determined temperature of a zone may correspond to the temperature achieved in a corresponding portion of the substrate 134.

[0061]

[0068] During the operation of the processing chamber, one or more heating elements 154, 140 may degrade, causing a change in the relationship between the temperature of the zone containing the heating elements 154, 140 and the identified resistance of the heating elements 154, 140 embedded within the zone. As previously mentioned, one or more temperature sensors (not shown) may be embedded within the body 152 of the heater assembly 170. In some embodiments, one or more temperature sensors can be used to generate temperature measurements for zones of the substrate support assembly 126. The identified temperature of the zone (identified based on the calculated resistance of one or more heating elements 154, 140) can be compared with the measured temperature of the zone generated by one or more temperature sensors. Based on this comparison, the temperature controller 190 may determine the difference between the measured temperature and the identified temperature. The temperature controller 190 may determine whether the difference deviates from the expected difference. In response to determining that the difference between the specified temperature and the measured temperature exceeds a threshold difference, the temperature controller 190 and / or system controller 148 correct the relationship between the zone temperature and the resistance of the heating elements 154, 140 (for example, by providing an indication that the specified resistance values ​​for the heating elements 154, 140 correspond to the first temperature measurement rather than the second temperature measurement). In some embodiments, in response to determining that the difference exceeds a threshold difference, the temperature controller 190 and / or system controller 148 may initiate recalibration of the substrate support assembly 126. The recalibration procedure may be the same as or similar to the calibration procedure described above.

[0062]

[0069] Depending on whether the temperature-determining component 312 has determined the temperature of a zone and / or a corresponding portion of the substrate 134 (referred to herein as the substrate temperature), the power-determining component 314 may determine whether to increase or decrease the amount of power supplied to one or more heating elements 154, 140 embedded within the zone. As previously stated, the system controller 148 may control the process performed in the processing chamber according to a process recipe. The process recipe may include one or more commands for maintaining or correcting the substrate temperature to a target temperature. The power-determining component 314 may determine, according to the process recipe, whether the substrate temperature corresponds to the target temperature. In some embodiments, the power-determining component 314 may determine that the substrate temperature corresponds to the target temperature depending on whether it has determined that the difference between the substrate temperature and the target temperature satisfies a threshold temperature difference (i.e., is below the threshold temperature). In similar embodiments, the temperature-determining component 312 may determine that the substrate temperature does not correspond to the target temperature depending on whether it has determined that the difference between the substrate temperature and the target temperature does not satisfy a threshold temperature difference (i.e., exceeds it). If the power-specific component 314 determines that the substrate temperature does not correspond to the target temperature of the process recipe, it may cause the power control module 194 to increase or decrease the amount of power supplied to one or more heating elements 154, 140 in order to heat the substrate to the target temperature.

[0063]

[0070] As previously mentioned, the temperature of one or more parts of the substrate 134 may be affected by various conditions associated with the process recipe. The temperature controller 190 may increase or decrease the amount of power transmitted to the heating elements 154, 140 in order to maintain the target temperatures of the heating elements 154, 140 when one or more conditions associated with the process recipe are modified. In some embodiments, the power control module 194 may use a temperature model 316 to determine whether to increase or decrease the amount of power transmitted to the heating elements 154, 140. The temperature model 316 determines the target temperature of the zones of the heater assembly 170 in response to modifications of one or more different process conditions associated with the process recipe. A model may be used for this purpose. For example, temperature model 316 may take as input the current temperature of a zone in heater assembly 170 and at least one of the current or future process settings of a process recipe. Temperature model 316 may provide as output the target temperature of a zone in heater assembly 170. In some embodiments, one or more portions of the substrate 134 may be heated to a target temperature according to a process recipe, depending on whether one or more heating elements 154, 140 of a zone are maintained or heated to the target temperature of the zone, as provided by temperature model 316.

[0064]

[0071] In an exemplary embodiment, the ESC may include a radio frequency (RF) electrode used to facilitate plasma generation during the process in the processing chamber. Heating elements 154, 140 embedded within the heater assembly 170 may provide a path to ground for the RF electrode. In some cases, the power setting of the RF electrode may result in a temperature change in the zone including the embedded heating elements 154, 140, thereby changing the temperature of a portion of the substrate 134. The system controller 148 may provide the temperature controller 190 with instructions regarding the current operating conditions and / or the change in operating conditions from a first setting to a second setting. For example, the system controller 148 may provide instructions regarding the current power setting for the RF electrode and / or the change in the power setting for the RF electrode from a first setting to a second setting. A temperature-specific component 312 may measure the current temperature of the heating elements 154, 140 and provide the current temperature of the zone in the heater assembly 170 and the change in the power setting of the RF electrode as input to the temperature model 316. The temperature model 316 may output a target temperature for a zone of the heater assembly 170 to be achieved in response to a change in the power setting of the RF electrode from a first setting to a second setting. Based on the target temperature, the power identification component 314 may identify the amount by which power should be increased or decreased to the heating elements 154, 140 in order to achieve the target temperature within the zone of the heater assembly 170. In some embodiments, the power control module 194 may increase or decrease the amount of power supplied to the heating elements 154, 140 before or simultaneously with the execution of a software command to modify the power setting of the RF electrode.

[0065]

[0072] Figures 4 to 7 are flowcharts of various embodiments of methods 400 to 700 for controlling the temperature of zones in a substrate support assembly. The methods are implemented by processing logic, which may include hardware (circuits, dedicated logic, etc.), software (such as that which runs on a general-purpose computer system or dedicated machine), firmware, or any combination thereof. Some methods 400 to 700 can be implemented by computing devices, such as the system controller 148 or temperature controller 190 in Figure 1.

[0066]

[0073] For the sake of simplicity, these methods are depicted and described as a series of actions. However, the multiple actions provided herein may be performed in various orders and / or simultaneously, and may be performed in conjunction with other actions not presented or described herein. Furthermore, not all illustrated actions can be performed in order to carry out the methods in accordance with the subject matter disclosed. In addition, those skilled in the art will understand and grasp that these methods may alternatively be represented as a series of interrelated states via a state diagram or events.

[0067]

[0074] Figure 4 is a flowchart of a method 400 for controlling the temperature of a zone in a substrate support assembly according to an aspect of the present disclosure. In some embodiments, one or more steps of method 400 are performed by a temperature controller 190. In block 410, the temperature controller supplies first direct current (DC) power to a heating element embedded in the zone of the substrate support assembly. In block 420, the temperature controller measures the voltage across the heating element and the current flowing through the heating element.

[0068]

[0075] In block 430, the temperature controller determines the temperature of a zone in the substrate support assembly based on the voltage applied to the heating element and the current flowing through the heating element. For example, the temperature controller may calculate the resistance of the heating element (which is the load for the circuit). The temperature controller may then compare the resistance to a temperature resistance function, table, or curve associated with the heating element.

[0069]

[0076] In block 440, the temperature controller determines the target temperature for the zone. The temperature controller further compares the determined temperature with the target temperature to determine if any difference or delta exists between them. If a difference exists, it may mean that the current power supplied to the heating element is insufficient to achieve the target temperature.

[0070]

[0077] In block 450, the temperature controller may identify a second DC power to supply to the heating element to achieve a target temperature. The second DC power may be identified, at least in part, based on a identified temperature difference between the current temperature and the target temperature. The second DC power may be identified, for example, based on the current power supplied to the heating element and the temperature difference between the current temperature and the target temperature. The temperature controller may access a model that associates input values ​​of current temperature, target temperature, and current power with output power. The temperature controller may input the current temperature, target temperature, and current power into the model, and the model may output a new DC power to supply to the heating element. The model may be a feedforward model, which may also take into account (i.e., receive as input) the current plasma output, target plasma output, current pressure, target pressure, and / or other current and / or target process parameters. The target process parameters may be the same as or different from the current process parameters (e.g., based on adjustments to the process parameters from the process recipe).

[0071]

[0078] In block 460, the temperature controller supplies a second DC power to the heating element to adjust the zone temperature to the target temperature.

[0072]

[0079] Figure 5 is a flowchart of method 500 for determining the temperature of a zone in a substrate support assembly according to an aspect of the present disclosure. In some embodiments, one or more steps of method 500 are performed by a temperature controller 190 or a system controller 148. In block 510, processing logic measures voltage and current for a heating element. In block 512, processing logic uses the measured current and voltage to calculate the resistance of the heating element. In block 514, processing logic inputs the resistance into a function or reference table that associates the resistance of the heating element with a temperature value. In block 520, processing logic determines the temperature for the zone corresponding to the resistance. In some embodiments, the temperature is the temperature in a zone of the substrate, rather than the direct temperature of the heating element. In other embodiments, the temperature is the temperature of the heating element. In such embodiments, processing logic may input the temperature into another reference table or function that associates the temperature of the heating element with the temperature of a specific zone of the substrate in order to determine the temperature in a zone of the substrate.

[0073]

[0080] Figure 6 is a flowchart of a method 600 for determining the DC power to be supplied to the heating elements of a substrate support assembly, according to an aspect of the present disclosure. In some embodiments, one or more steps of method 600 may be performed by a temperature controller 190 or a system controller 148. In block 610, the processing logic determines the temperature of the zones of the substrate support assembly. In block 620, the processing logic receives instructions that the operating conditions of the process being performed in the process chamber should be modified from a first process setting to a second process setting. For example, the target temperature may be increased from 200 degrees Celsius to 250 degrees Celsius, the plasma output may be increased, and a process gas that was not previously flowing may be started to flow.

[0074]

[0081] In block 630, the processing logic inputs the specified temperature of the zone and at least a second process setting to a model that associates the process setting and the current temperature with a target temperature. In one embodiment, the processing logic inputs one or more current process settings, one or more future target process settings, the current power supplied to the heating element, the current temperature associated with the heating element (e.g., the temperature in the zone of the substrate or the temperature of the heating element), and / or the target temperature to the model. In block 640, the processing logic receives the output of the model, which includes a second DC power supplied to the heating element in the zone. In block 640, the processing logic may supply a second DC power to the heating element in order to adjust the zone temperature to a target temperature.

[0075]

[0082] Figure 7 is a flowchart of a method 700 for recalibrating the relationship between the resistance of a specified heating element and the temperature of a zone containing the heating element, according to an aspect of the present disclosure. In some embodiments, one or more steps of method 700 are performed by a temperature controller 190 or a system controller 148.

[0076]

[0083] In block 710, the processing logic identifies the resistance of the heating element based on the measured voltage and current of the power transmitted to the heating element. In block 720, the processing logic identifies the temperature of a zone in the substrate support assembly containing the heating element based on the identified resistance of the heating element. The zone temperature may be identified based on a known relationship between the resistance of the heating element and the previously measured temperature of the zone. The known relationship correlates the previously identified resistance value of the heating element with the measured temperature value of the zone.

[0077]

[0084] In block 730, the processing logic measures the zone temperature. The zone temperature may be measured using a temperature sensor embedded in the substrate support assembly. In block 740, the processing logic compares the identified temperature of the zone with the measured temperature of the zone.

[0078]

[0085] In block 750, the processing logic determines that the difference between the specified temperature of the zone and the measured temperature of the zone exceeds a threshold. In some embodiments, in response to the determination that the difference exceeds a threshold, the processing logic may update the correlation between the specified resistance of the heating element and the temperature of the zone to reflect the measured temperature of the zone. In other or similar embodiments, in response to the determination that the difference exceeds a threshold, the processing logic may recalibrate the relationship between the resistance of the heating element and the temperature of the zone containing the heating element. In such embodiments, the processing logic may initiate a calibration process using an object to be calibrated in the processing chamber (e.g., a calibration wafer).

[0079]

[0086] The operation of Method 700 may be performed only a few times over a long period of time. During each execution, the processing logic may record the difference between the measured temperature of the zone and the specified temperature of the zone. Over a long period of time, the processing logic may identify a shift (e.g., drift) in the difference between the specified temperature and the measured temperature. For example, the processing logic may determine that the difference between the measured temperature of the zone and the specified temperature of the zone is increasing over a long period of time. Based on the identified shift, the processing logic may initiate the execution of a calibration process using the object to be calibrated in the processing chamber. In other or similar embodiments, based on the identified shift, the processing logic may initiate the replacement of one or more heating elements, temperature controllers, and / or substrate support assemblies in the processing system.

[0080]

[0087] Figure 8 shows a schematic diagram of a machine taking an exemplary form of a computing device 800, in which a set of instructions can be executed to cause the machine to perform any one or more of the methodologies described herein. In an alternative embodiment, the machine may be connected to (e.g., networked) other machines within a local area network (LAN), intranet, extranet, or the internet. The machine may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The machine may be a personal computer (PC), tablet PC, set-top box (STB), portable information terminal (PDA), mobile phone, web device, server, network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that define the operations performed by the machine. Furthermore, although a single machine is illustrated, the term “machine” should also be interpreted to include any collection of machines (e.g., computers) that individually or collectively execute a set (or more sets) of instructions and commands to perform any one or more of the methods described herein. In embodiments, the computing device 800 may correspond to the temperature controller 190 or the system controller 148 in Figure 1.

[0081]

[0088] An exemplary computing device 800 includes a processing device 802, main memory 804 (e.g., read-only memory (ROM), flash memory, synchronous DRAM, or other dynamic random access memory (DRAM)), static memory 806 (e.g., flash memory, static random access memory (SRAM), etc.), and secondary memory (e.g., data storage device 828) that communicate with each other via a bus 808.

[0082]

[0089] The processing device 802 may represent one or more general-purpose processors, such as a microprocessor or a central processing device. More specifically, the processing device 802 may be a complex instruction set compute (CISC) microprocessor, a reduced instruction set compute (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor that implements other instruction set or combination of instruction sets. The processing device 802 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), or a network processor. The processing device 802 may also be or include a system-on-a-chip (SoC), a programmable logic controller (PLC), or other type of processing device. The processing device 802 is configured to execute processing logic (instruction instruction 826 for mapping recipe 850) for performing the operations and steps described herein.

[0083]

[0090] The computing device 800 may further include a network interface device 822 for communicating with the network 864. The computing device 800 may also include a video display unit 810 (e.g., a liquid crystal display (LCD) or a cathode ray tube (CRT)), an alphanumeric input device 812 (e.g., a keyboard), a cursor control device 814 (e.g., a mouse), and a signal generation device 820 (e.g., a speaker).

[0084]

[0091] The data storage device 828 may include a machine-readable storage medium (or more specifically, a non-temporary computer-readable storage medium) 824 that stores one or more instruction instruction sets 826 that embody one or more of the methodologies or functions described herein. Here, a non-temporary storage medium means a storage medium other than a carrier wave. The instruction instructions 826 may also reside in the main memory 804 and / or the processing device 802 while they are executed, all or at least partially, by the computing device 800, and the main memory 804 and the processing device 802 also constitute a computer-readable storage medium.

[0085]

[0092] The computer-readable storage medium 824 may also be used to store the mapping recipe 850. The computer-readable storage medium 824 may also store a software library containing methods for calling the mapping recipe 850. In one embodiment, the computer-readable storage medium 824 is shown as a single medium, but the term “computer-readable storage medium” should be understood to include a single or multiple mediums (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more sets of instruction commands. The term “machine-readable storage medium” should also be interpreted to include any medium capable of storing or encoding a set of instruction commands executed by a machine, causing the machine to execute any one or more of the methods of the present invention. The term “machine-readable storage medium” should be interpreted to include, but not be limited to, solid memory, optical media, and magnetic media.

[0086]

[0093] The foregoing description details numerous specific details, such as examples of particular systems, components, and methods, in order to provide a good understanding of some embodiments of the Disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the Disclosure can be implemented without these specific details. In other examples, well-known components or methods are not described in detail or are presented in simple block diagram form in order to avoid unnecessarily obscuring the Disclosure. Thus, the specific details described are merely illustrative. Certain embodiments may be considered to be different from these illustrative details and still fall within the scope of the Disclosure.

[0087]

[0094] Throughout this specification, any reference to “one embodiment” or “one embodiment” means that a particular feature, structure, or characteristic described in relation to an embodiment is included in at least one embodiment. Therefore, when the phrase “in one embodiment” or “in one embodiment” appears in various places throughout this specification, not all of them necessarily refer to the same embodiment. In addition, the term “or” is intended to mean inclusive “or” rather than exclusive “or.” Where the terms “about” or “approximately” are used herein, this is intended to mean that the nominal values ​​presented are accurate within ±10%.

[0088]

[0095] Although the operations of the methods described herein are illustrated and described in a specific order, the order of operations of each method may be changed so that certain operations are performed in reverse order, and certain operations are performed at least partially concurrently with other operations. In another embodiment, the instructions or sub-operations of separate operations may be intermittent and / or alternating.

[0089]

[0096] The above description should be understood as illustrative, not restrictive. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Therefore, the scope of the disclosure should be determined by referring to the attached claims and together with the entire scope of equivalents to which such claims are entitled.

Claims

1. To supply direct current (DC) power to heating elements embedded in each of the multiple zones of the substrate support assembly contained within the processing chamber, When the DC power is supplied to the heating element, it is determined, based on the measured voltage applied to the heating element and the measured current passing through the heating element, that the temperature of the substrate support assembly does not meet the temperature conditions associated with the process recipe for the process in the processing chamber. Based on the measured voltage and current applied to the heating element, identify the zones among the plurality of zones whose temperatures do not correspond to the target temperature for the zones based on the temperature conditions. and, The method includes increasing and decreasing the amount of DC power supplied to the heating element embedded in the zone while the DC power is continuously supplied to the heating element, such that the temperature of the identified zone is corrected to the target temperature and the temperature of the substrate support assembly satisfies the temperature conditions, A method comprising: a radio frequency (RF) electrode being grounded through at least one of the heating elements, the power setting of the RF electrode causing a change in the temperature of the zone, the change in the zone temperature and the change in the power setting of the RF electrode being provided as input to a temperature model, the temperature model outputting a target temperature for the zone based on the input change in the zone temperature and the power setting of the RF electrode.

2. Determining that the temperature of the substrate support assembly does not satisfy the temperature conditions means that Based on the measured voltage applied to the heating element and the measured current passing through the heating element, the temperature of the substrate support assembly is determined, and The method according to claim 1, comprising determining that the temperature of the substrate support assembly does not correspond to the substrate temperature of the substrate in the processing chamber.

3. The method according to claim 1, further comprising receiving an instruction that the operating conditions of a process performed in the processing chamber should be modified from a first process setting to a second process setting, and the DC power is further modified at least in part based on the second process setting.

4. The method according to claim 1, further comprising using an AC-DC rectifier to convert AC power to DC power.

5. Identifying zones among the aforementioned multiple zones whose temperatures do not correspond to the target temperature for the zones based on the aforementioned temperature conditions is: The temperature of the heating element included in the zone is calculated using the voltage applied to the heating element and the current passing through the heating element, and The method according to claim 1, comprising determining that the temperature of the heating element does not correspond to the target temperature for the zone.

6. The resistance of at least one of the heating elements is calculated using the voltage applied to that at least one of the heating elements and the current passing through that at least one of the heating elements, and The method according to claim 1, further comprising inputting the resistor into at least one of a function or reference table that associates the at least one resistor of the heating element with a temperature value.

7. A DC power supply operably coupled to a heating element embedded in at least one of multiple zones of a substrate support assembly contained within a processing chamber, and The heating element and the DC power supply are operably coupled to a controller, and the controller is The DC power supply is configured to supply the first DC power to the heating element. When the DC power is supplied to the heating element, it is determined, based on the measured voltage applied to the heating element and the measured current passing through the heating element, that the temperature of the substrate support assembly does not meet the temperature conditions associated with the process recipe for the process in the processing chamber. Based on the measured voltage and current applied to the heating element, identify the zones among the plurality of zones whose temperatures do not correspond to the target temperature for the zones based on the temperature conditions, and To correct the temperature of the identified zone to the target temperature and to satisfy the temperature conditions of the substrate support assembly, perform at least one of increasing or decreasing the amount of DC power supplied to the heating element embedded in the zone while the DC power is continuously supplied to the heating element. A device wherein a radio frequency (RF) electrode is grounded through at least one of the heating elements, the power setting of the RF electrode causes a change in the temperature of the zone, the change in the zone temperature and the change in the power setting of the RF electrode are provided as input to a temperature model, and the temperature model outputs a target temperature for the zone based on the input change in the zone temperature and the power setting of the RF electrode.

8. In order to determine that the temperature of the substrate support assembly does not meet the temperature conditions, the controller: Based on the measured voltage applied to the heating element and the measured current passing through the heating element, the temperature of the substrate support assembly is determined, and The apparatus according to claim 7, which performs the action of determining that the temperature of the substrate support assembly does not correspond to the substrate temperature of the substrate in the processing chamber.

9. The apparatus according to claim 7, wherein the controller further receives instructions that the operating conditions of a process performed in the processing chamber should be modified from a first process setting to a second process setting, and the DC power is further modified at least in part based on the second process setting.

10. The apparatus according to claim 7, wherein the DC power supply includes an AC-to-DC rectifier, and the controller further performs the function of converting AC power to DC power using the AC-to-DC rectifier.

11. In order to identify the zones among the plurality of zones whose temperatures do not correspond to the target temperature for the zones based on the temperature conditions, the controller: The temperature of the heating element included in the zone is calculated using the voltage applied to the heating element and the current passing through the heating element, and The apparatus according to claim 7, which performs the action of determining that the temperature of the heating element does not correspond to the target temperature for the zone.

12. The aforementioned controller, The resistance of at least one of the heating elements is calculated using the voltage applied to that at least one of the heating elements and the current passing through that at least one of the heating elements, and The apparatus according to claim 7, further comprising inputting the resistor into at least one of a function or reference table that associates the at least one resistor of the heating element with a temperature value.

13. A processing chamber comprising a substrate support assembly, wherein the substrate support assembly comprises a heating element embedded in at least one of a plurality of zones of the substrate support assembly, A DC power supply configured to supply direct current (DC) power to each heating element, and Each heating element and a controller operably coupled to the DC power supply are provided, and the controller The DC power supply is configured to supply the first DC power to the heating element. When the DC power is supplied to the heating element, it is determined, based on the measured voltage applied to the heating element and the measured current passing through the heating element, that the temperature of the substrate support assembly does not meet the temperature conditions associated with the process recipe for the process in the processing chamber. Based on the measured voltage and current applied to the heating element, identify the zones among the plurality of zones whose temperatures do not correspond to the target temperature for the zones based on the temperature conditions, and To correct the temperature of the identified zone to the target temperature and to satisfy the temperature conditions of the substrate support assembly, perform at least one of increasing or decreasing the amount of DC power supplied to the heating element embedded in the zone while the DC power is continuously supplied to the heating element. An electronic device manufacturing system wherein a radio frequency (RF) electrode is grounded through at least one of the heating elements, the power setting of the RF electrode causes a change in the temperature of the zone, the change in the zone temperature and the change in the power setting of the RF electrode are provided as input to a temperature model, and the temperature model outputs a target temperature for the zone based on the input change in the zone temperature and the power setting of the RF electrode.

14. In order to determine that the temperature of the substrate support assembly does not meet the temperature conditions, the controller: Based on the measured voltage applied to the heating element and the measured current passing through the heating element, the temperature of the substrate support assembly is determined, and The electronic device manufacturing system according to claim 13, further comprising determining that the temperature of the substrate support assembly does not correspond to the substrate temperature of the substrate in the processing chamber.

15. The electronic device manufacturing system according to claim 13, wherein the controller further receives instructions that the operating conditions of a process performed in the processing chamber should be modified from a first process setting to a second process setting, and the DC power is further modified at least in part based on the second process setting.

16. The electronic device manufacturing system according to claim 13, wherein the DC power supply includes an AC-DC rectifier, and the controller further performs the function of converting AC power to DC power using the AC-DC rectifier.

17. In order to identify the zones among the plurality of zones whose temperatures do not correspond to the target temperature for the zones based on the temperature conditions, the controller: The temperature of the heating element included in the zone is calculated using the voltage applied to the heating element and the current passing through the heating element, and The electronic device manufacturing system according to claim 13, further comprising determining that the temperature of the heating element does not correspond to the target temperature for the zone.

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