An etching method that alternates between non-plasma etching and plasma etching processes.
JP7885449B2Active Publication Date: 2026-07-06LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
Patent Information
- Application Number
- JP2025522791
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-10-26
- Filing Date
- 2023-10-26
- Publication Date
- 2026-07-06
- Estimated Expiration
- 2043-10-26
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Abstract
A method for forming an opening pattern in a substrate, the substrate comprising a film disposed thereon and a patterned mask layer disposed on the film, the method comprising: 1) exposing the substrate to a vapor of a passivation molecule under non-plasma conditions for a certain period of time to form a surface protection layer on the patterned mask layer; 2) exposing the substrate to a plasma-activated etching gas and plasma dry etching the substrate with the plasma-activated etching gas to form openings on the patterned mask layer of the film; and 3) repeating steps 1) and 2) until a desired opening pattern is formed in the film; wherein the surface protection layer is also formed on sidewalls of the openings formed in the film, and the passivation molecule has a boiling point of 20°C or higher.
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Citation Information
Patent Citations
Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20160163561A1
Passivation chemistry for plasma etching
WO2022072160A2
High conductive passivation layers and method of forming the same during high aspect ratio plasna etching
WO2022146697A1