Adjustment method and plasma treatment devices

Abstract

Provided is a technique for compensating for difference between devices that occur between a plurality of plasma treatment devices. An adjustment method comprises: a step for acquiring reference distribution data in a first plasma treatment device having a first chamber and a first substrate support unit disposed in the first chamber, the reference distribution data being related to the distribution of ion fluxes generated between plasma generated inside the first chamber and a substrate disposed to the first substrate support unit; a step for acquiring distribution data in a second plasma treatment device having a second chamber and a second substrate support unit disposed in the second chamber, the distribution data being related to the distribution of ion fluxes generated between plasma generated inside the second chamber and a substrate disposed to the second substrate support unit; and a step for adjusting elements capable of adjusting the ion fluxes in the second plasma treatment device on the basis of the distribution data acquired in the second plasma treatment device and the reference distribution data acquired in the first plasma treatment device.

Description

Adjustment method and plasma processing apparatus

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a conditioning method and a plasma processing apparatus.

[0002] As a technique for measuring plasma on the wafer surface, there is an on-wafer monitoring system described in Patent Document 1.

[0003] Japanese Patent Application Laid-Open No. 2003-282546

[0004] The present disclosure provides a technique for correcting inter-apparatus differences that occur among a plurality of plasma processing apparatuses.

[0005] An adjustment method in one exemplary embodiment of the present disclosure includes: (a) acquiring, in a first plasma processing apparatus having a first chamber and a first substrate support disposed in the first chamber, reference distribution data, which is data regarding a distribution of ion flux occurring between a plasma generated in a first chamber and a substrate disposed on the first substrate support; (b) acquiring, in a second plasma processing apparatus having a second chamber and a second substrate support disposed in the second chamber, distribution data, which is data regarding a distribution of ion flux occurring between a plasma generated in a second chamber and a substrate disposed on the second substrate support; and (c) adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

[0006] According to one exemplary embodiment of the present disclosure, a technique for correcting differences between a plurality of plasma processing apparatuses can be provided.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 2 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 3 is a diagram showing an example of the top view of a substrate support part 11. FIG. 4 is a diagram showing an example of a cross section of the substrate support part 11. FIG. 5 is a block diagram showing an example of the configuration of a control board 80. FIG. 6 is a flowchart showing a method according to an exemplary embodiment. FIG. 7 is a flowchart showing an example of process ST1. FIG. 8 is a diagram showing an example of reference distribution data. FIG. 9 is a flowchart showing an example of process ST2. FIG. 10 is a diagram showing an example of distribution data. FIG. 11 is a flowchart showing an example of process ST3. FIG. 12 is a flowchart showing a method according to an exemplary embodiment. FIG. 13 is a flowchart showing an example of process ST0. FIG. 14 is a diagram for explaining another example of the configuration of a plasma processing apparatus.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, there is provided an adjustment method including: (a) acquiring, in a first plasma processing apparatus having a first chamber and a first substrate support disposed in the first chamber, reference distribution data, the reference distribution data being data regarding a distribution of ion flux occurring between a plasma generated in the first chamber and a substrate disposed on the first substrate support; (b) acquiring, in a second plasma processing apparatus having a second chamber and a second substrate support disposed in the second chamber, distribution data being data regarding a distribution of ion flux occurring between a plasma generated in the second chamber and a substrate disposed on the second substrate support; and (c) adjusting an ion flux adjustable element in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

[0010] In one exemplary embodiment, the step (a) includes: (a-1) placing a substrate on a first substrate support; (a-2) generating plasma in the first chamber and performing plasma processing on the substrate; (a-3) supplying power to each of a plurality of first heaters arranged in the first substrate support; (a-4) acquiring the power supplied to each of the plurality of first heaters while plasma is generated in the first chamber; and (a-5) calculating reference distribution data based on the power acquired for each of the plurality of first heaters in the step (a-4).

[0011] In one exemplary embodiment, the step (b) includes: (b-1) placing the substrate on a second substrate support; (b-2) generating plasma in the second chamber and performing plasma processing on the substrate; (b-3) supplying power to each of a plurality of second heaters arranged in the second substrate support; (b-4) acquiring the power supplied to each of the plurality of second heaters while plasma is generated in the second chamber; and (b-5) calculating distribution data based on the power acquired for each of the plurality of second heaters in the step (b-4).

[0012] In one exemplary embodiment, the factors in step (c) include at least one of parameters related to the plasma processing in the second plasma processing apparatus and parameters related to the structure of the second plasma processing apparatus.

[0013] In one exemplary embodiment, the method further includes a step (d) of creating a table that associates a change in the ion flux distribution with a change in an element that can adjust the ion flux distribution, and the step (c) adjusts the element in the second plasma processing apparatus by referring to the table created in the step (d) based on a difference between the reference distribution data and the distribution data.

[0014] In one exemplary embodiment, the variation of the element includes a variation of the distribution of electron density of the plasma.

[0015] In one exemplary embodiment, the first substrate support has a first substrate support surface that supports a substrate, the first substrate support surface including a plurality of first support regions, and each of the plurality of first heaters is disposed on the first substrate support in each of the plurality of first support regions.

[0016] In one exemplary embodiment, the second substrate support has a second substrate support surface that supports a substrate, the second substrate support surface including a plurality of second support regions, and each of the plurality of second heaters is disposed on the second substrate support in each of the plurality of second support regions.

[0017] In one exemplary embodiment, there is provided a plasma processing apparatus having a chamber, a substrate support disposed within the chamber, and a controller, wherein the controller (a) acquires reference distribution data, acquired in another plasma processing apparatus different from the plasma processing apparatus, which is data regarding the distribution of ion flux occurring between plasma generated in another chamber in the other plasma processing apparatus and a substrate disposed on another substrate support, (b) acquires distribution data in the plasma processing apparatus, which is data regarding the distribution of ion flux occurring between plasma generated in the chamber and a substrate disposed on the substrate support, and (c) adjusts an element capable of adjusting the ion flux in the plasma processing apparatus based on the distribution data acquired in the plasma processing apparatus and the reference distribution data acquired in the other plasma processing apparatus, thereby performing a process.

[0018] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0019] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system may include multiple plasma processing apparatuses 1 and multiple control units 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber (also simply referred to as a "chamber") 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0020] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0021] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may control multiple plasma processing apparatuses 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0022] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0023] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, sidewalls 10a and 10b of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0024] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0025] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0026] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0027] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. Details of the temperature adjustment module will be described later with reference to FIG. 4.

[0028] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0029] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0030] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0031] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0032] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0033] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0034] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0035] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] Fig. 3 is a diagram showing an example of the top view of the substrate support 11. As shown in Fig. 3, the substrate support 11 includes a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The central region 111a includes a plurality of zones 111c as indicated by dashed lines in Fig. 3. In this embodiment, the temperature adjustment module can control the temperature of the substrate W or the substrate support 11 on a zone-by-zone basis. The number of zones 111c and the area and shape of each zone 111c may be set as appropriate depending on the conditions required for temperature control of the substrate W.

[0037] FIG. 4 is a diagram showing an example of a cross section of the substrate support 11. FIG. 4 shows a portion of the cross section of the substrate support 11 taken along line AA' in FIG. 3. As shown in FIG. 4, the substrate support 11 includes an electrostatic chuck 1111, a base 1110, and a control board 80. The electrostatic chuck 1111 includes multiple heaters 200 and multiple resistors 201 therein. In this embodiment, in each zone 111c shown in FIG. 3, one heater 200 and one resistor 201 are disposed inside the electrostatic chuck 1111. In each zone 111c, the resistor 201 is disposed near the heater 200. In one example, the resistor 201 may be disposed between the heater 200 and the base 1110, closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value changes depending on the temperature. In one example, the resistor 201 may be a thermistor (temperature sensor).

[0038] The base 1110 has one or more through holes 90 penetrating from the upper surface (the surface facing the electrostatic chuck 1111) to the lower surface (the surface facing the control board 80) of the base 1110. The multiple heaters 200 and the multiple resistors 201 can be electrically connected to the control board 80 via the through holes 90. In the present embodiment, a connector 91 is fitted into one end of the upper surface of the through hole 90, and a connector 92 is fitted into one end of the lower surface of the through hole 90. The multiple heaters 200 and the multiple resistors 201 are electrically connected to the connector 91. The multiple heaters 200 and the multiple resistors 201 may be connected to the connector 91 via wiring arranged inside the electrostatic chuck 1111, for example. The connector 92 is electrically connected to the control board 80. Furthermore, multiple wirings 93 are arranged in the through hole 90 to electrically connect the connector 91 and the connector 92. This allows the plurality of heaters 200 and the plurality of resistors 201 to be electrically connected to the control board 80 via the through holes 90. The connector 92 may also function as a support member that fixes the control board 80 to the base 1110.

[0039] The control board 80 is a board on which elements for controlling the plurality of heaters 200 and / or the plurality of resistors 201 are arranged. The control board 80 can be arranged facing the lower surface of the base 1110 and parallel to the lower surface. The control board 80 may be arranged surrounded by a conductive member. The control board 80 may be supported on the base 1110 by a support member other than the connector 92.

[0040] The control board 80 may be electrically connected to the power supply unit 70 via wiring 73. That is, the power supply unit 70 may be electrically connected to the plurality of heaters 200 via the control board 80. The power supply unit 70 generates power to be supplied to the plurality of heaters 200. As a result, the power supplied from the power supply unit 70 to the control board 80 may be supplied to the plurality of heaters 200 via the connector 92, wiring 93, and connector 91. An RF filter for reducing RF may be disposed between the power supply unit 70 and the control board 80. The RF filter may be provided outside the plasma processing chamber 10.

[0041] The control board 80 can be communicatively connected to the control unit 2 via wiring 75. The wiring 75 may be optical fiber. In this case, the control board 80 communicates with the control unit 2 by optical communication. The wiring 75 may be metal wiring.

[0042] 5 is a block diagram showing an example of the configuration of the control board 80. The control board 80 is provided with a control unit 81, and, as examples of elements, a plurality of supply units 82 and a plurality of measurement units 83. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0043] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83, and supplies the voltage to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated in accordance with the resistance value of the resistor 201 into a digital signal and output the digital signal to the control unit 81.

[0044] The control unit 81 controls the temperature of the substrate W in each zone 111c. The control unit 81 controls the power supply to the heaters 200 based on the set temperature received from the control unit 2 and the voltage indicated by the digital signal received from the measurement unit 83. As an example, the control unit 81 calculates the temperature of the resistor 201 (hereinafter also referred to as the "measured temperature") based on the voltage indicated by the digital signal received from the measurement unit 83. The control unit 81 then controls each supply unit 82 based on the set temperature and the measured temperature. Based on the control of the control unit 81, each supply unit 82 switches whether or not to supply the power supplied from the power supply unit 70 to each heater 200. Furthermore, based on the control of the control unit 81, each supply unit 82 may increase or decrease the power supplied from the power supply unit 70 to each heater 200. This allows the substrate W, the electrostatic chuck 1111, and / or the base 1110 to be maintained at a predetermined temperature.

[0045] <Example of Plasma Processing Method> The plasma processing method performed in the plasma processing apparatus 1 includes an etching process that uses plasma to etch a film on the substrate W. In one embodiment, this plasma processing method is executed by the control unit 2.

[0046] First, the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support 11 by the lifter, and held by suction on the substrate support 11 as shown in FIG.

[0047] Next, a processing gas is supplied to the shower head 13 by the gas supply unit 20, and is then supplied to the plasma processing space 10s from the shower head 13. The processing gas supplied at this time includes a gas that generates activated species necessary for etching the substrate W.

[0048] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere in the plasma processing space 10s is exhausted through the gas exhaust port 10e, and the pressure inside the plasma processing space 10s may be reduced. As a result, plasma is generated in the plasma processing space 10s, and the substrate W is etched.

[0049] During plasma processing, power is supplied to each of the heaters 200 so that the temperature of each of the heaters 200 (the temperature detected by the resistor 201) becomes a constant set temperature. This controls the temperature of the substrate W and the substrate support 11 to the set temperature.

[0050] <Example of Plasma Processing Apparatus Adjustment Method> FIG. 6 is a flowchart showing an adjustment method (hereinafter also referred to as "this method") according to one exemplary embodiment. This method may include a method for correcting inter-apparatus differences occurring among a plurality of plasma processing apparatuses. In one embodiment, a second plasma processing apparatus is adjusted based on a first plasma processing apparatus. As shown in FIG. 6, this method includes a step (ST1) of acquiring reference distribution data in the first plasma processing apparatus, a step (ST2) of acquiring distribution data in the second plasma processing apparatus, and a step (ST3) of adjusting the second plasma processing apparatus. The processes in each step may be performed in the plasma processing system shown in FIG. 1. The plasma processing apparatus 1 shown in FIG. 2 is an example of the first plasma processing apparatus and the second plasma processing apparatus. In the following, as an example, a control unit 2 controls each component of the plasma processing apparatus 1 to execute this method.

[0051] <Step ST1: Acquisition of Reference Distribution Data in First Plasma Processing Apparatus>

[0052] FIG. 7 is a flowchart illustrating an example of step ST1. In step ST1, a substrate is plasma-processed in a first plasma processing apparatus to acquire reference distribution data. The first plasma processing apparatus may be a plasma processing apparatus that serves as a reference apparatus for adjustment. The first plasma processing apparatus may be predetermined at the time of shipment or may be determined by a user at a factory or on a production line after shipment. The first plasma processing apparatus may also be determined based on past processing results. The first plasma processing apparatus may be one or more. For example, the substrate used to acquire the reference distribution data may be a dummy substrate. The dummy substrate may be a substrate on which no film is formed. The dummy substrate may be, for example, a silicon wafer. The substrate may be a substrate on which semiconductor elements are formed. The plasma processing used to acquire the reference distribution data may include a plasma etching process for forming semiconductor elements on the substrate. That is, the substrate may include a predetermined film and a mask film disposed on the predetermined film. The mask film may have a predetermined opening pattern.

[0053] 7, step ST1 includes a step of placing a substrate (step ST11), a step of setting the temperature of the substrate (step ST12), a step of generating plasma (step ST13), a step of acquiring the supply power of each heater (step ST14), and a step of calculating reference distribution data (step ST15). In one example, step ST1 can be performed after installation or maintenance of the first plasma processing apparatus.

[0054] First, in process ST11, a substrate is placed on the substrate support part 11. Next, in process ST12, the temperature of the substrate is set. In one example, the control part 2 controls the control part 81 arranged on the control board 80 so that the temperature of the substrate in each zone 111c becomes the set temperature. The control part 2 also acquires the power supplied to each heater 200 when the temperature of the substrate is stable at the set temperature and stores the power in the memory part 2a2. Note that the state in which the temperature of the substrate is stable at the set temperature may be determined as a predetermined time after the substrate is placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory part 2a when the temperature of the electrostatic chuck 1111 is stable at the set temperature without placing the substrate on the substrate support part 11.

[0055] After the substrate temperature is stabilized at the set temperature, in step ST13, plasma is generated in the plasma processing chamber 10 to plasma process the substrate. The plasma processing is performed based on a process recipe including a plurality of parameters. This process recipe may be the same as the process recipe for the plasma processing (step ST23) performed in the second plasma processing apparatus described below. The process recipe parameters may include the type of process gas, the flow rate of the process gas, the frequency, power, and duty ratio of the source RF signal, the frequency, power / voltage, and duty ratio of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied in the plasma processing chamber 10.

[0056] Next, in process ST14, the power supplied to the plurality of heaters 200 is acquired. In processes ST13 and ST14, the control unit 2 controls the power supplied to each heater 200 so that the temperature of the substrate in each zone 111c becomes the set temperature. Then, in a state in which plasma is generated in process ST14, the control unit 2 acquires the power supplied to each of the plurality of heaters 200. The control unit 2 can store the power supplied to the plurality of heaters 200 acquired in process ST14 in the memory unit 2a.

[0057] Next, in step ST15, reference distribution data is calculated. The reference distribution data may be distribution data of ion flux occurring between the plasma generated in the plasma processing chamber 10 and the substrate.

[0058] The ion flux distribution data may be calculated based on the heat flux occurring between the substrate placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. For example, when the temperature of the substrate placed on the substrate support 11 is constant, the ion flux Γi(m －２ s －１ ) is the heat flux Γ occurring between the substrate and the plasma generated in the plasma processing chamber 10 ｈｅａｔ (W / m ２ ) can have the following relationship: ｉ ×Vdc∝Γ ｈｅａｔ Formula (1)

[0059] Here, Vdc (V) is the bias voltage (V) generated between the dummy substrate and the plasma. Also, the heat flux Γ generated between the dummy substrate placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10 is ｈｅａｔ may be calculated based on the supplied power acquired in step ST14. ｈｅａｔ may be calculated based on the following formula: ｈｅａｔ = (P ０ -P ｈｔｒ ) / A formula (2)

[0060] Here, P ０ is the power (W) supplied to the heater 200 of the zone 111c when no plasma is generated. ０ is the power supplied to the heater 200 of the zone 111c, acquired in the process ST12. ｈｔｒ is the power (W) supplied to the heater 200 of the zone 111c in the state where the plasma is generated. ｈｔｒis the power supplied to the heater 200 of the zone 111c, acquired in the process ST14. ｈｔｒ For example, ℓ may be the power (W) supplied to the heater 200 of the zone 111c when the power (W) becomes substantially constant after the plasma is generated. Also, A is the area (m ２ )

[0061] FIG. 8 is a diagram showing an example of reference distribution data. The reference distribution data can be acquired in a first plasma processing apparatus capable of normally performing plasma processing. Therefore, the reference distribution data may be used as reference distribution data for the ion flux generated between the plasma and the substrate. It is also possible to acquire multiple reference distribution data from multiple substrates and calculate a single distribution data such as that shown in FIG. 8 based on the multiple reference distribution data. The reference distribution data includes not only the ion flux distribution itself as shown in FIG. 8 but also various numerical information corresponding to the distribution. As an example, FIG. 8 shows distribution data calculated for a substrate having a diameter of 300 mm.

[0062] <Step ST2: Acquisition of Distribution Data in Second Plasma Processing Apparatus>

[0063] FIG. 9 is a flowchart illustrating an example of step ST2. In step ST2, a substrate is plasma-processed in a second plasma processing apparatus to acquire distribution data. The second plasma processing apparatus may be the plasma processing apparatus to be adjusted. The second plasma processing apparatus may be located in the same factory or production line as the first plasma processing apparatus, and may perform plasma processing using the same process recipe as the first plasma processing apparatus. The second plasma processing apparatus may be one or more. The substrate used to acquire the distribution data may be, for example, a dummy substrate. The dummy substrate may be a substrate on which no film is formed. The dummy substrate may be, for example, a silicon wafer. The plasma processing used to acquire the distribution data may include a plasma etching process for forming semiconductor elements on the substrate. The plasma processing may be performed using the same process recipe as the plasma processing performed in the first plasma processing apparatus. The substrate may be the same substrate as the substrate used to acquire the reference distribution data in the first plasma processing apparatus, a substrate having the same structure, or another substrate of the same type.

[0064] 9, step ST2 includes a step of placing a substrate (step ST21), a step of setting the temperature of the substrate (step ST22), a step of generating plasma (step ST23), a step of acquiring the power supplied to each heater (step ST24), and a step of calculating distribution data (step ST25). In one example, step ST2 may be performed after installation or maintenance of the second plasma processing apparatus.

[0065] First, in step ST21, a substrate is placed on the substrate support part 11. Next, in step ST22, the temperature of the substrate is set. In one example, the control unit 2 controls the control unit 81 disposed on the control board 80 so that the temperature of the substrate in each zone 111c becomes the set temperature. The set temperature may be the same as the set temperature in step ST12 in the first plasma processing apparatus. The control unit 2 also acquires the power supplied to each heater 200 when the temperature of the substrate is stable at the set temperature and stores it in the memory unit 2a2. Note that the state in which the temperature of the substrate is stable at the set temperature may be determined as a predetermined time after the substrate is placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory unit 2a when the temperature of the electrostatic chuck 1111 is stable at the set temperature without placing the substrate on the substrate support part 11.

[0066] After the temperature of the substrate is stabilized at the set temperature, in step ST23, plasma is generated in the plasma processing chamber 10 to plasma process the substrate.

[0067] Next, in process ST24, the power supplied to the plurality of heaters 200 is acquired. In processes ST23 and ST24, the control unit 2 controls the power supplied to each heater 200 so that the temperature of the substrate in each zone 111c becomes the set temperature. Then, in a state in which plasma is generated in process ST24, the control unit 2 acquires the power supplied to each of the plurality of heaters 200. The control unit 2 can store the power supplied to the plurality of heaters 200 acquired in process ST24 in the memory unit 2a2.

[0068] Next, in step ST25, distribution data is calculated. The distribution data may be distribution data of ion fluxes occurring between the substrate and the plasma generated in the plasma processing chamber 10. The distribution data of ion fluxes may be calculated based on the formulas (1) and (2) described in step ST15.

[0069] 10 is a diagram showing an example of distribution data. The distribution data shown in FIG. 10 is, for example, data acquired after installation or maintenance of the second plasma processing apparatus. The distribution data in the second plasma processing apparatus is data acquired during plasma processing using the same process recipe as the reference distribution data in the first plasma processing apparatus, and may reflect differences between the first and second plasma processing apparatuses. Note that FIG. 8 shows, for example, distribution data calculated for a substrate having a diameter of 300 mm.

[0070] <Step ST3: Adjustment of Second Plasma Processing Apparatus>

[0071] 11 is a flowchart showing an example of step ST3. In step ST3, an element capable of adjusting distribution data in the second plasma processing apparatus is adjusted so that the distribution data acquired in the second plasma processing apparatus approaches the reference distribution data acquired in the first plasma processing apparatus.

[0072] As shown in FIG. 11, process ST3 includes a process (ST31) of comparing distribution data in the second plasma processing apparatus with reference distribution data in the first plasma processing apparatus, and a process (ST32) of adjusting an adjustable element of the distribution data in the second plasma processing apparatus.

[0073] First, in step ST31, the distribution data in the second plasma processing apparatus is compared with the reference distribution data in the first plasma processing apparatus. If there is a difference between the distribution data and the reference distribution data that is equal to or greater than a predetermined value, step ST32 is performed. If there is no difference that is equal to or greater than the predetermined value, step ST3 is terminated.

[0074] The ion flux distribution shown in FIG. 10 is higher in the central and lower regions than the ion flux distribution shown in FIG. 8 . Therefore, in step ST32, elements of the second plasma processing apparatus are adjusted so that the second plasma processing apparatus has the same ion flux distribution as the first plasma processing apparatus. The elements to be adjusted include parameters related to the plasma processing in the second plasma processing apparatus and parameters related to the structure of the second plasma processing apparatus. The parameters related to the plasma processing may include the type of processing gas, the flow rate of the processing gas, the frequency, power, and duty ratio of the source RF signal, the frequency, power / voltage, and duty ratio of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied in the plasma processing chamber 10. The elements to be adjusted include parameters related to the output adjustment (calibration) of the plasma processing apparatus. The output adjustment (calibration) of the plasma processing apparatus may include calibration of the power of the RF signal and bias signal, calibration of the pressure sensor, calibration of the pressure regulating valve, and calibration of the gas flow controller. Parameters relating to the structure (physical configuration) of the device may include the amount of tightening of the screws used to attach the device components to the device body, the gap between the device components (adjusted, for example, using a gap gauge or shim), and the electrical contact between the device components (contact state by the conductive spiral).

[0075] According to an exemplary embodiment of the present disclosure, the adjustment method includes: (a) acquiring reference distribution data, which is data regarding the distribution of ion flux generated between the plasma generated in the chamber 10 and the substrate placed on the substrate support 11, in a first plasma processing apparatus; (b) acquiring distribution data, which is data regarding the distribution of ion flux generated between the plasma generated in the chamber 10 and the substrate placed on the substrate support 11, in a second plasma processing apparatus; and (c) adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus. According to this exemplary embodiment, the distribution data regarding the distribution of ion flux can be used as an index to correct differences between multiple plasma processing apparatuses, eliminating the need to change parameters of the plasma processing apparatuses based on empirical rules. As a result, the time required for matching multiple plasma processing apparatuses is reduced and the accuracy of the matching is improved.

[0076] According to the exemplary embodiments of the present disclosure, it is possible to reduce variations in ion flux distribution occurring among a plurality of plasma processing apparatuses, thereby reducing variations among apparatuses in plasma processing.

[0077] 12 is a flowchart illustrating the method according to one exemplary embodiment. As shown in FIG. 12, the method may further include a step of generating a table (ST0). That is, the method includes a step of generating the table (ST0), a step of acquiring reference distribution data in a first plasma processing apparatus (ST1), a step of acquiring distribution data in a second plasma processing apparatus (ST2), and a step of adjusting the second plasma processing apparatus (ST3).

[0078] <Step ST1: Table Generation>

[0079] FIG. 13 is a flowchart illustrating an example of step ST0. The table generated in step ST0 may be a table storing a correspondence between a change in a factor that can adjust the ion flux distribution and a change in the ion flux distribution resulting from the change. The factor that can adjust the ion flux distribution may include one or more parameters related to plasma generation. For example, the parameter may be a parameter that can change the distribution of electron density generated in the plasma processing chamber 10, such as the magnetic flux density of a magnetic field applied to the plasma processing chamber 10. For example, the plasma processing apparatus 1 may include multiple electromagnets configured to apply a magnetic field to the plasma processing chamber 10 (see FIG. 14 ). In this case, the parameter may be, for example, a current and / or a voltage supplied to the multiple electromagnets.

[0080] 13 , step ST0 includes a step of placing a dummy substrate (ST01), a step of setting the temperature of the dummy substrate (ST02), a step of setting plasma processing parameters (ST03), a step of generating plasma (ST04), a step of acquiring the supply power of each heater (ST05), a step of confirming the acquisition of the supply power (ST06), and a step of generating a table (ST07). In one example, step ST0 may be performed after installation or maintenance of the plasma processing apparatus 1. Step ST0 may be performed in the first plasma processing apparatus, the second plasma processing apparatus, or another plasma processing apparatus.

[0081] First, in step ST01, a dummy substrate is placed on the substrate support part 11. For example, the dummy substrate may be a substrate on which no film is formed. For example, the dummy substrate may be a silicon wafer. Next, in step ST02, the temperature of the dummy substrate is set. For example, the control unit 2 controls the control unit 81 disposed on the control board 80 so that the temperature of the dummy substrate in each zone 111c becomes the set temperature. The control unit 2 also acquires the power supplied to each heater 200 when the temperature of the dummy substrate is stabilized at the set temperature and stores the power in the memory unit 2a2. The state in which the temperature of the dummy substrate is stabilized at the set temperature may be determined as a predetermined time after the dummy substrate is placed on the substrate support part 11. Alternatively, the power supplied to each heater 200 may be acquired and stored in the memory unit 2a when the temperature of the electrostatic chuck 1111 is stabilized at the set temperature without placing the dummy substrate on the substrate support part 11.

[0082] After the temperature of the dummy substrate is stabilized at the set temperature, parameters for plasma processing the dummy substrate are set in step ST03. These parameters may be the same as the parameters for the plasma processing performed on the substrate in steps ST1 and ST2. The plasma processing may include a plasma etching process for forming semiconductor elements on the dummy substrate or the process substrate.

[0083] The plasma processing parameters may include the type of process gas, the flow rate of the process gas, the frequency, power and duty ratio of the source RF signal, the frequency, power / voltage and duty ratio of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied in the plasma processing chamber 10. Then, in step ST04, plasma is generated and plasma processing is performed on the dummy substrate.

[0084] Next, in step ST05, the power supplied to the plurality of heaters 200 is acquired. In steps ST04 and ST05, the control unit 2 may control the power supplied to each heater 200 so that the temperature of the substrate in each zone 111c becomes the set temperature. Then, the control unit 2 acquires the power supplied to each of the plurality of heaters 200 while plasma is generated in the plasma processing chamber 10. The control unit 2 may store the power supplied to the plurality of heaters 200 acquired in step ST05 in the storage unit 2a in association with one or more plasma processing parameters. In this embodiment, the parameter may be a parameter that can change the distribution of electron density generated in the plasma processing chamber 10.

[0085] Next, in step ST06, it is determined whether the power supply to the heaters 200 has been acquired under all conditions for which the parameters have been changed. If it is determined that the power supply has not been acquired under all conditions (step ST06: No), the process returns to step ST03, where the control unit 2 changes one or more parameters to generate plasma (step ST04). The parameter may be a parameter that changes the distribution of electron density generated in the plasma processing chamber 10. For example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. Then, in a state in which plasma is generated using the newly set parameters in step ST03, the power supplied to each of the heaters 200 is newly acquired (step ST05). The control unit 2 may store the power supply to the heaters 200 acquired in step ST05 in the storage unit 2a2 in association with one or more parameters.

[0086] Then, when it is determined that the powers supplied to the heaters 200 under all conditions in which the parameters are changed have been acquired (step ST06: Yes), the control unit 2 stops the plasma processing. Then, in step ST07, the control unit 2 generates a table based on the parameter values ​​and the powers supplied to the heaters 200 stored in the storage unit 2a2. The table may be a table that associates the amount of change in the parameters in the plasma processing performed in step ST04 with the amount of change in the ion flux distribution caused by the amount of change. Note that the ion flux distribution data may be calculated based on the formulas (1) and (2) described in step ST15.

[0087] In the table generated in step ST07, the parameter stored in association with the change in ion flux may be the change in magnetic flux density of the magnetic field applied to the plasma, or the change in current and / or voltage supplied to the electromagnet that generates the magnetic field. Here, when the temperature of the substrate is constant, the ion flux Γ generated between the substrate and the plasma ｉ may be related to the electron density in the plasma according to the following equation:

[0088] Gamma ｉ ∝n ｅ ×(Vdc) １／２ Formula (3)

[0089] where n ｅ is the electron density in the plasma (m －３ ) where Vdc is the bias voltage (V) generated between the substrate and the plasma. The electron density in the plasma can have a relationship with the magnetic flux density of the magnetic field applied to the plasma based on the following equation:

[0090] n ｅ ∝H Formula (4)

[0091] Here, H is the magnetic flux density (G). This allows the distribution of the magnetic flux density applied to the plasma to be changed, thereby changing the distribution of the ion flux generated between the plasma and the substrate. In this way, in step ST07, the control unit 2 can, for example, generate a table that associates the amount of change in the distribution of the magnetic flux density of the magnetic field applied to the plasma with the amount of change in the distribution of the ion flux.

[0092] Furthermore, in the table generated in step ST07, the parameter stored in association with the amount of change in ion flux may be a parameter that can change the distribution of the bias voltage generated between the substrate W placed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. Here, when the temperature of the substrate is constant, the ion flux Γ generated between the substrate and the plasma ｉ may have the relationship of the above formula (3) with respect to the bias voltage (V) generated between the substrate and / or ring assembly 112 and the plasma. This allows the distribution of the bias voltage Vdc to be changed to change the distribution of the ion flux generated between the plasma and the substrate. In this manner, in step ST07, the control unit 2 may, for example, generate a table that associates the amount of change in the bias voltage distribution with the amount of change in the ion flux distribution. Also, in step ST07, the control unit 2 may, for example, generate a table that associates the amount of change in the voltage applied to the ring assembly 112 with the amount of change in the ion flux distribution. Also, in step ST07, the control unit 2 may, for example, generate a table that associates the amount of change in the height of the ring assembly 112 with the amount of change in the ion flux distribution.

[0093] Steps ST1 and ST2 may be similar to those in the above exemplary embodiment.

[0094] In step ST3, when adjusting the second plasma processing apparatus, the elements in the second plasma processing apparatus are adjusted based on the difference between the reference distribution data and the distribution data, with reference to the table created in step ST0.

[0095] In the example of the ion flux distribution shown in FIG. 10 , the ion flux is higher in the central and lower regions than in the example of the ion flux distribution shown in FIG. 8 . Therefore, in step ST3, correction values ​​for elements that can adjust the distribution data of the second plasma processing apparatus are calculated based on the reference distribution data and the distribution data so that the ion flux distribution of the second plasma processing apparatus is the same as that of the first plasma processing apparatus. The correction values ​​for the elements may be the difference between the reference distribution data and the distribution data. The correction values ​​for the elements may be calculated by the control unit 2 of the second plasma processing apparatus, the control unit 2 of the first plasma processing apparatus, or a server connected to the plasma processing apparatus via a network and transmitted from the server to the control unit 2 of the second plasma processing apparatus to be adjusted. Then, in step ST0, the control unit 2 references the change in the ion flux distribution corresponding to the correction value in the table stored in the memory unit 2a2. The control unit 2 then sets and adjusts parameters for correcting the ion flux distribution based on the change in the parameter corresponding to the change in the ion flux distribution, which is included in the table. In one example, the parameter may be the flux density of a magnetic field applied in the plasma, or the current and / or voltage supplied to an electromagnet that generates the magnetic field.

[0096] In the above-described process ST3, the correction value is calculated based on the reference distribution data and the distribution data, but the method for calculating the correction value is not limited to this. As an example, data acquired in the plasma processing in processes ST1 and ST2 may be accumulated, and the parameters in the plasma processing may be corrected based on the accumulated data to correct the ion flux distribution. The accumulated data may include the plasma processing parameters, the power supplied to the heater, the heater temperature, the heat flux distribution, the ion flux distribution, the type and structure of the substrate, etc.

[0097] <Another embodiment of the plasma processing apparatus 1> FIG. 14 is a diagram illustrating another exemplary configuration of the plasma processing apparatus. In one embodiment, the plasma processing apparatus 1 may include an electromagnet assembly 3 including one or more electromagnets 45. The electromagnet assembly 3 is configured to generate a magnetic field within the chamber 10. In one embodiment, the plasma processing apparatus 1 includes an electromagnet assembly 3 including a plurality of electromagnets 45. In the embodiment shown in FIG. 14, the plurality of electromagnets 45 includes electromagnets 46 to 49. The plurality of electromagnets 45 are provided above or above the chamber 10. In other words, the electromagnet assembly 3 is disposed above or above the chamber 10. In the example shown in FIG. 14, the plurality of electromagnets 45 are provided above the showerhead 13.

[0098] Each of the one or more electromagnets 45 includes a coil. In the example shown in Fig. 14, the electromagnets 46 to 49 include coils 61 to 64. The coils 61 to 64 are wound around a central axis Z. The central axis Z may be an axis passing through the center of the substrate W or the substrate support 11. That is, in the electromagnet assembly 3, the coils 61 to 64 may be toroidal coils. The coils 61 to 64 are provided coaxially around the central axis Z at the same height position.

[0099] The electromagnet assembly 3 further includes a bobbin 50 (or yoke). The coils 61 to 64 are wound around the bobbin 50 (or yoke). The bobbin 50 is formed, for example, from a magnetic material. The bobbin 50 has a columnar portion 51, multiple cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a substantially disk shape, and its central axis coincides with the central axis Z. The columnar portion 51 and the multiple cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The columnar portion 51 has a substantially cylindrical shape, and its central axis coincides with the central axis Z. The radius of the columnar portion 51 is, for example, 30 mm. The cylindrical portions 52 to 55 extend radially outside the columnar portion 51 with respect to the central axis Z.

[0100] Coil 61 is wound along the outer peripheral surface of columnar portion 51 and is housed in the groove between columnar portion 51 and cylindrical portion 52. Coil 62 is wound along the outer peripheral surface of cylindrical portion 52 and is housed in the groove between cylindrical portions 52 and 53. Coil 63 is wound along the outer peripheral surface of cylindrical portion 53 and is housed in the groove between cylindrical portions 53 and 54. Coil 64 is wound along the outer peripheral surface of cylindrical portion 54 and is housed in the groove between cylindrical portions 54 and 55.

[0101] A current source 65 is connected to each coil included in one or more electromagnets 45. The supply and stop of current supply from the current source 65 to each coil included in one or more electromagnets 45, the direction of the current, and the current value are controlled by the control unit 2. When the plasma processing apparatus 1 includes a plurality of electromagnets 45, a single current source may be connected to each coil of the plurality of electromagnets 45, or different current sources may be connected to each coil individually.

[0102] The one or more electromagnets 45 form a magnetic field symmetrical with respect to the central axis Z within the chamber 10. By controlling the current supplied to each of the one or more electromagnets 45, it is possible to adjust the strength distribution (or magnetic flux density) of the magnetic field in the radial direction with respect to the central axis Z. This allows the plasma processing apparatus 1 to adjust the radial distribution of the density of the plasma generated within the chamber 10. Other configurations, operations, and / or functions of the plasma processing apparatus 1 shown in FIG. 14 may be similar to those of the plasma processing apparatus 1 described in the example shown in FIG. 2.

[0103] Embodiments of the present disclosure further include the following aspects.

[0104] (Supplementary Note 1) An adjustment method comprising: (a) acquiring, in a first plasma processing apparatus having a first chamber and a first substrate support disposed in the first chamber, reference distribution data which is data regarding a distribution of ion flux occurring between plasma generated in the first chamber and a substrate disposed on the first substrate support; (b) acquiring, in a second plasma processing apparatus having a second chamber and a second substrate support disposed in the second chamber, distribution data which is data regarding a distribution of ion flux occurring between plasma generated in the second chamber and a substrate disposed on the second substrate support; and (c) adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

[0105] (Supplementary Note 2) The adjustment method according to Supplementary Note 1, wherein the step (a) includes: (a-1) placing the substrate on the first substrate support; (a-2) generating plasma in the first chamber and performing plasma processing on the substrate; (a-3) supplying power to each of a plurality of first heaters arranged in the first substrate support; (a-4) acquiring the power supplied to each of the plurality of first heaters in a state in which plasma is generated in the first chamber; and (a-5) calculating the reference distribution data based on the power acquired for each of the plurality of first heaters in the step (a-4).

[0106] (Supplementary Note 3) The adjustment method according to Supplementary Note 1 or Supplementary Note 2, wherein the step (b) includes: (b-1) placing the substrate on the second substrate support; (b-2) generating plasma in the second chamber and performing plasma processing on the substrate; (b-3) supplying power to each of a plurality of second heaters arranged in the second substrate support; (b-4) acquiring the power supplied to each of the plurality of second heaters in a state where plasma is generated in the second chamber; and (b-5) calculating the distribution data based on the power acquired for each of the plurality of second heaters in the step (b-4).

[0107] (Appendix 4) The adjustment method described in any one of Appendices 1 to 3, wherein the elements in step (c) include at least one of parameters related to plasma processing in the second plasma processing apparatus and parameters related to the structure of the second plasma processing apparatus.

[0108] (Supplementary Note 5) The adjustment method according to any one of Supplementary Notes 1 to 4, further comprising: (d) creating a table that associates the amount of change in the distribution of the ion flux with the amount of change in the element that can adjust the distribution of the ion flux; and (c) adjusting the element in the second plasma processing apparatus by referring to the table created in (d) based on the difference between the reference distribution data and the distribution data.

[0109] (Supplementary Note 6) The adjusting method according to Supplementary Note 5, wherein the amount of change in the element includes an amount of change in the distribution of electron density of the plasma.

[0110] (Supplementary Note 7) The adjustment method described in Supplementary Note 2, wherein the first substrate support portion has a first substrate support surface that supports a substrate, the first substrate support surface includes a plurality of first support regions, and each of the plurality of first heaters is disposed on the first substrate support portion in each of the plurality of first support regions.

[0111] (Appendix 8) The adjustment method described in Appendix 3, wherein the second substrate support portion has a second substrate support surface that supports a substrate, the second substrate support surface includes a plurality of second support regions, and each of the plurality of second heaters is disposed on the second substrate support portion in each of the plurality of second support regions.

[0112] (Supplementary Note 9) A plasma processing apparatus having a chamber, a substrate support part disposed in the chamber, and a control part, wherein the control part performs the following processes: (a) acquires reference distribution data, which is acquired in another plasma processing apparatus different from the plasma processing apparatus, and which is data regarding the distribution of ion flux occurring between plasma generated in another chamber in the other plasma processing apparatus and a substrate disposed on another substrate support part; (b) acquires distribution data in the plasma processing apparatus, which is data regarding the distribution of ion flux occurring between plasma generated in the chamber and a substrate disposed on the substrate support part; and (c) adjusts an element in the plasma processing apparatus that can adjust the ion flux, based on the distribution data acquired in the plasma processing apparatus and the reference distribution data acquired in the other plasma processing apparatus.

[0113] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0114] 1...plasma processing apparatus, 2...controller, 10...plasma processing chamber, 10a...side wall, 10b...bottom wall, 10s...plasma processing space, 11...substrate support, 12...plasma generation section, 70...power supply section, 73...wiring, 75...wiring, 81...controller, 82...supply section, 83...measurement section, 111c...zone, 112...ring assembly, 200...heater, 201...resistor, 1110...base, 1110a...flow path, 1111...electrostatic chuck, 1111a...ceramic member, 1111b...electrostatic electrode

Claims

1. (a) A first plasma processing apparatus having a first chamber and a first substrate support disposed within the first chamber, comprising the steps of acquiring reference distribution data which is data relating to the distribution of ion flux generated between the plasma generated in the first chamber and the substrate disposed within the first substrate support, (b) A second plasma processing apparatus having a second chamber and a second substrate support disposed within the second chamber, comprising the steps of acquiring distribution data which is data relating to the distribution of ion flux generated between the plasma generated in the second chamber and the substrate disposed within the second substrate support, (c) A step of adjusting the ion flux-adjustable element in the second plasma apparatus based on the distribution data acquired in the second plasma apparatus and the reference distribution data acquired in the first plasma apparatus, Adjustment methods, including those mentioned above.

2. The above step (a) is, (a-1) The step of placing the substrate on the first substrate support portion, (a-2) A step of generating plasma in the first chamber and performing plasma treatment on the substrate, (a-3) A step of supplying power to each of the plurality of first heaters arranged in the first substrate support portion, (a-4) A step of acquiring the power supplied to each of the plurality of first heaters when plasma is generated in the first chamber, (a-5) A step of calculating the reference distribution data based on the power obtained for each of the plurality of first heaters in step (a-4), The adjustment method according to claim 1, including the following:

3. The above step (b) is, (b-1) The step of placing the substrate on the second substrate support portion, (b-2) A step of generating plasma in the second chamber and performing plasma treatment on the substrate, (b-3) A step of supplying power to each of the plurality of second heaters arranged in the second substrate support portion, (b-4) A step of acquiring the power supplied to each of the plurality of second heaters when plasma is generated in the second chamber, (b-5) A step of calculating the distribution data based on the power obtained for each of the plurality of second heaters in step (b-4), The adjustment method according to claim 1, including the following:

4. The adjustment method according to claim 1, wherein the element in step (c) includes at least one of the parameters relating to plasma processing in the second plasma processing apparatus and the parameters relating to the structure of the second plasma processing apparatus.

5. (d) The process further includes creating a table that associates the change in the distribution of the ion flux with the change in the element that can adjust the distribution of the ion flux, The adjustment method according to claim 1, wherein step (c) adjusts the elements in the second plasma processing apparatus by referring to the table created in step (d) based on the difference between the reference distribution data and the distribution data.

6. The adjustment method according to claim 5, wherein the amount of change in the element includes the amount of change in the electron density distribution of the plasma.

7. The first substrate support portion has a first substrate support surface that supports the substrate, The first substrate support surface includes a plurality of first support regions, The adjustment method according to claim 2, wherein each of the plurality of first heaters is arranged on the first substrate support in each of the plurality of first support regions.

8. The second substrate support portion has a second substrate support surface that supports the substrate, The second substrate support surface includes a plurality of second support regions. The adjustment method according to claim 3, wherein each of the plurality of second heaters is arranged on the second substrate support in each of the plurality of second support regions.

9. A plasma processing apparatus having a chamber, a substrate support portion and a control portion disposed within the chamber, The control unit, (a) Obtain reference distribution data, which is data relating to the distribution of ion flux generated between the plasma generated in another chamber of the other plasma processing apparatus and the substrate placed in another substrate support, obtained in a plasma processing apparatus different from the plasma processing apparatus said to be said to be said to be said to be said to be said to be obtained, (b) In the plasma processing apparatus, distribution data is obtained which is data relating to the distribution of ion flux generated between the plasma generated in the chamber and the substrate placed on the substrate support, (c) Adjust the ion flux-adjustable elements in the plasma processing apparatus based on the distribution data obtained in the plasma processing apparatus and the reference distribution data obtained in the other plasma processing apparatus. A plasma processing device that performs the processing.

10. The step (a) is: (a-1) A step of placing the substrate on the substrate support portion, (a-2) A step of generating plasma in the chamber and performing plasma treatment on the substrate, (a-3) A step of supplying power to each of the plurality of first heaters arranged in the substrate support portion, (a-4) A step of acquiring the power supplied to each of the plurality of first heaters when plasma is generated in the chamber, (a-5) A step of calculating the reference distribution data based on the power obtained for each of the plurality of first heaters in step (a-4), The plasma processing apparatus according to claim 9, including the following:

11. The (b) step is: (b-1) A step of placing the substrate on the other substrate support portion, (b-2) A step of generating plasma in the other chamber and performing plasma treatment on the substrate, (b-3) A step of supplying power to each of the plurality of second heaters arranged in the other substrate support portion, (b-4) A step of acquiring the power supplied to each of the plurality of second heaters when plasma is generated in the other chamber, (b-5) A step of calculating the distribution data based on the power obtained for each of the plurality of second heaters in step (b-4), The plasma processing apparatus according to claim 9, including the following:

12. The plasma apparatus according to claim 9, wherein the element in step (c) includes at least one of the parameters relating to plasma processing in the other plasma apparatus and the parameters relating to the structure of the other plasma apparatus.

13. (d) further comprising the step of creating a table that associates the amount of change in the distribution of the ion flux with the amount of change in the element that can adjust the distribution of the ion flux, The plasma apparatus according to claim 9, wherein step (c) adjusts the elements in the other plasma apparatus by referring to the table created in step (d) based on the difference between the reference distribution data and the distribution data.

14. The plasma apparatus according to claim 13, wherein the amount of change of the element includes the amount of change in the distribution of electron density of the plasma.

15. The substrate support portion has a first substrate support surface that supports the substrate, The first substrate support surface includes a plurality of first support regions, The plasma processing apparatus according to claim 10, wherein each of the plurality of first heaters is disposed in the substrate support portion in each of the plurality of first support regions.

16. The other substrate support portion has a second substrate support surface that supports the substrate, The second substrate support surface includes a plurality of second support regions. The plasma processing apparatus according to claim 11, wherein each of the plurality of second heaters is disposed in each of the plurality of second support regions on the other substrate support portion.