Semiconductor light emitting device

Abstract

This semiconductor light-emitting device comprises: a substrate having a substrate surface; a lateral surface light-emitting element that is provided on the substrate surface and has a first light-emitting lateral surface which emits light; and an upper surface light-emitting element that is provided on the substrate surface and has a light-emitting upper surface which emits light. The lateral surface light-emitting element is positioned so that the first light-emitting lateral surface is oriented in a direction intersecting the thickness direction of the substrate. The upper surface light-emitting element is positioned so that the light-emitting upper surface is oriented in the thickness direction of the substrate.

Description

Semiconductor light-emitting device

[0001] The present disclosure relates to semiconductor light emitting devices.

[0002] 2. Description of the Related Art Conventionally, semiconductor light emitting devices equipped with light emitting diodes (LEDs) as light sources are known as light source devices mounted in various electronic devices (see, for example, Patent Document 1).

[0003] JP 2013-41866 A

[0004] Incidentally, semiconductor light emitting devices are being required to emit light over a wider area.

[0005] A semiconductor light-emitting device that solves the above problem comprises a substrate having a substrate surface, a side light-emitting element provided on the substrate surface and having a light-emitting side surface that emits light, and a top light-emitting element provided on the substrate surface and having a light-emitting top surface that emits light, wherein the side light-emitting element is arranged with the light-emitting side surface facing in a direction that intersects the thickness direction of the substrate, and the top light-emitting element is arranged with the light-emitting top surface facing in the thickness direction of the substrate.

[0006] According to the semiconductor light emitting device, light can be emitted more widely.

[0007] FIG. 1 is a perspective view of a semiconductor light emitting device of a first embodiment. FIG. 2 is a plan view of the semiconductor light emitting device of FIG. 1. FIG. 3 is a plan view of a substrate of the semiconductor light emitting device of FIG. 2. FIG. 4 is a back view of the substrate of FIG. 3. FIG. 5 is a cross-sectional view of the semiconductor light emitting device taken along line F5-F5 of FIG. 2. FIG. 6 is a cross-sectional view showing the light emission patterns of the side light emitting element and the top light emitting element in the semiconductor light emitting device of FIG. 5. FIG. 7 is an enlarged view of a first light emitting side surface and its periphery, showing the light emission pattern of the side light emitting element in the semiconductor light emitting device of FIG. 5. FIG. 8 is a plan view schematically showing an example of a manufacturing process for the semiconductor light emitting device of the first embodiment. FIG. 9 is a plan view schematically showing an example of a manufacturing process for the semiconductor light emitting device subsequent to FIG. 8. FIG. 10 is a plan view schematically showing an example of a manufacturing process for the semiconductor light emitting device subsequent to FIG. 9. FIG. 11 is a cross-sectional view schematically showing the semiconductor light emitting device of FIG. 10. FIG. 12 is a plan view of a semiconductor light emitting device of a second embodiment. FIG. 13 is a cross-sectional view showing the light emission patterns of the side light-emitting element and the top light-emitting element in a cross-sectional structure of the semiconductor light-emitting device cut along line F13-F13 in FIG. 12. FIG. 14 is an enlarged view of a second light-emitting side surface and its periphery, showing the light emission pattern of the side light-emitting element in the semiconductor light-emitting device of FIG. 13. FIG. 15 is a plan view schematically showing an example of a manufacturing process for the semiconductor light-emitting device of the second embodiment. FIG. 16 is a plan view schematically showing an example of a manufacturing process for the semiconductor light-emitting device subsequent to FIG. 15. FIG. 17 is a plan view of a semiconductor light-emitting device of a third embodiment. FIG. 18 is a plan view of the substrate of the semiconductor light-emitting device of FIG. 17. FIG. 19 is a back view of the substrate of FIG. 18. FIG. 20 is a cross-sectional view of the semiconductor light-emitting device cut along line F20-F20 in FIG. 17. FIG. 21 is a cross-sectional view showing the light emission patterns of the first side light-emitting element, the second side light-emitting element, and the top light-emitting element in the semiconductor light-emitting device of FIG. 20. FIG. 22 is a plan view of a semiconductor light-emitting device of a fourth embodiment. Fig. 23 is a cross-sectional view of a part of the semiconductor light-emitting device taken along line F23-F23 in Fig. 22. Fig. 24 is a cross-sectional view showing the light emission modes of the first side light-emitting element, the second side light-emitting element, and the top light-emitting element in the semiconductor light-emitting device of Fig. 22. Fig. 25 is a plan view of a semiconductor light-emitting device of a fifth embodiment. Fig. 26 is a cross-sectional view showing the light emission modes of the first side light-emitting element and the top light-emitting element in the semiconductor light-emitting device of Fig. 25.27 is a cross-sectional view showing the light emission mode of the second side light-emitting element in the semiconductor light-emitting device of FIG. 25. FIG. 28 is a plan view of a semiconductor light-emitting device of a sixth embodiment. FIG. 29 is a plan view of the substrate of the semiconductor light-emitting device of FIG. 28. FIG. 30 is a back view of the substrate of FIG. 29. FIG. 31 is an enlarged plan view of a portion of the semiconductor light-emitting device of FIG. 28. FIG. 32 is an enlarged plan view of a portion of the semiconductor light-emitting device of FIG. 28. FIG. 33 is a cross-sectional view showing the light emission mode of the first side light-emitting element, the second side light-emitting element, and the top light-emitting element in the semiconductor light-emitting device of FIG. 28. FIG. 34 is a cross-sectional view showing the light emission mode of the third side light-emitting element, the fourth side light-emitting element, and the top light-emitting element in the semiconductor light-emitting device of FIG. 28. FIG. 35 is a plan view of a semiconductor light-emitting device of a seventh embodiment. FIG. 36 is a plan view of the substrate of the semiconductor light-emitting device of FIG. 35. FIG. 37 is a back view of the substrate of FIG. 36. FIG. 38 is an enlarged plan view of a portion of the semiconductor light-emitting device of FIG. 35. FIG. 39 is an enlarged plan view of a portion of the semiconductor light-emitting device of FIG. 35. FIG. 40 is a plan view of a semiconductor light-emitting device of an eighth embodiment. FIG. 41 is a cross-sectional view of the semiconductor light-emitting device cut along line F41-F41 in FIG. 40. FIG. 42 is a plan view schematically showing an example of a manufacturing process for the semiconductor light-emitting device of the eighth embodiment. FIG. 43 is a plan view schematically showing an example of a manufacturing process for the semiconductor light-emitting device subsequent to FIG. 42. FIG. 44 is a plan view schematically showing an example of a manufacturing process for the semiconductor light-emitting device subsequent to FIG. 43. FIG. 45 is a cross-sectional view schematically showing an example of a manufacturing process for the semiconductor light-emitting device of FIG. 44. FIG. 46 is a plan view of a semiconductor light-emitting device of a ninth embodiment. FIG. 47 is a plan view of the semiconductor light-emitting device of FIG. 46 with the side light-emitting element, top light-emitting element, wires, sealing resin, and sidewalls omitted. FIG. 48 is a cross-sectional view of the semiconductor light-emitting device cut through the side light-emitting element and top light-emitting element of FIG. 46. FIG. 49 is a plan view of a semiconductor light-emitting device of a tenth embodiment. Fig. 50 is a cross-sectional view of the semiconductor light emitting device taken along line F50-F50 in Fig. 49. Fig. 51 is a plan view of a semiconductor light emitting device according to a modified example. Fig. 52 is a plan view of a semiconductor light emitting device according to a modified example. Fig. 53 is a cross-sectional view of the semiconductor light emitting device taken along line F53-F53 in Fig. 52. Fig. 54 is a cross-sectional view of a semiconductor light emitting device according to a modified example. Fig. 55 is a cross-sectional view of a semiconductor light emitting device according to a modified example.

[0083] Fig. 56 is a cross-sectional view of a semiconductor light emitting device of a modified example. Fig. 57 is a plan view of a semiconductor light emitting device of a modified example. Fig. 58 is a cross-sectional view showing the light emission modes of the side light emitting elements and top light emitting elements of the semiconductor light emitting device of Fig. 57. Fig. 59 is a plan view of a semiconductor light emitting device of a modified example. Fig. 60 is a plan view of a semiconductor light emitting device of a modified example. Fig. 61 is a cross-sectional view of the semiconductor light emitting device taken along line F61-F61 in Fig. 60. Fig. 62 is a cross-sectional view of a semiconductor light emitting device of a modified example. Fig. 63 is a cross-sectional view of a semiconductor light emitting device of a modified example. Fig. 64 is a plan view of a semiconductor light emitting device of a modified example. Fig. 65 is a plan view of a semiconductor light emitting device of a modified example. Fig. 66 is a plan view of a semiconductor light emitting device of a modified example. Fig. 67 is a plan view of a semiconductor light emitting device of a modified example. Fig. 68 is a cross-sectional view of a semiconductor light emitting device of a modified example. Fig. 69 is a cross-sectional view showing the semiconductor light emitting device of Fig. 68 mounted on a circuit board. Fig. 70 is a cross-sectional view of a semiconductor light emitting device of a modified example. Fig. 71 is a plan view of a semiconductor light emitting device according to a modified example. Fig. 72 is a cross-sectional view of the semiconductor light emitting device taken along line F72-F72 in Fig. 71. Fig. 73 is a cross-sectional view of a semiconductor light emitting device according to a modified example. Fig. 74 is a cross-sectional view of a semiconductor light emitting device according to a modified example. Fig. 75 is a cross-sectional view of a semiconductor light emitting device according to a modified example.

[0008] Hereinafter, several embodiments of semiconductor light emitting devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0009] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0010] First Embodiment A semiconductor light emitting device 10 according to a first embodiment will be described with reference to Figures 1 to 11. Figures 1 to 7 show a schematic configuration of the semiconductor light emitting device 10 according to the first embodiment, and Figures 8 to 11 show an example of a method for manufacturing the semiconductor light emitting device 10 according to the first embodiment.

[0011] The term "planar view" used in this disclosure refers to viewing the semiconductor light emitting device 10 in the Z-axis direction of the mutually orthogonal X, Y, and Z axes shown in Fig. 1. In addition, in the semiconductor light emitting device 10 shown in Fig. 1, the +Z direction is defined as the top and the -Z direction is defined as the bottom. Unless otherwise specified, "planar view" refers to viewing the semiconductor light emitting device 10 from above along the Z-axis.

[0012] [Overall Configuration of Semiconductor Light-Emitting Device] FIG. 1 shows a perspective view of a semiconductor light-emitting device 10, and FIG. 2 shows a planar view of the semiconductor light-emitting device 10. FIG. 3 shows a planar view of the semiconductor light-emitting device 10, omitting the side light-emitting element 40, the top light-emitting element 50, wires W1 and W2, the sealing resin 60, and the sidewall 70 (described later) from FIG. 2. FIG. 4 shows the rear surface structure of the substrate 20 (described later) of the semiconductor light-emitting device 10. For ease of understanding, the sealing resin 60 is omitted from FIGS. 2 and 3. FIG. 5 shows a schematic cross-sectional view of the semiconductor light-emitting device 10, and FIG. 6 shows a schematic cross-sectional view of the semiconductor light-emitting device 10, illustrating the region of light emitted from the semiconductor light-emitting device 10. FIG. 7 shows a schematic cross-sectional view of a portion of the semiconductor light-emitting device 10 for illustrating light emitted from the side light-emitting element 40. Note that a diffusing material 67 (described later) is omitted from FIGS. 1 and 2 for ease of understanding. In FIGS. 6 and 7, the region of light is indicated by dots.

[0013] 1 and 2, the semiconductor light emitting device 10 is formed in a rectangular flat plate shape with its thickness oriented in the Z-axis direction. The semiconductor light emitting device 10 includes a substrate 20, and a side light emitting element 40 and a top light emitting element 50 disposed on the substrate 20.

[0014] The substrate 20 is a component that supports both the side light emitting element 40 and the top light emitting element 50. The substrate 20 is formed in a flat plate shape with the thickness direction being the Z-axis direction. In the following description, "plan view" is synonymous with "viewed from the thickness direction of the substrate."

[0015] In the first embodiment, in a plan view, the substrate 20 has a rectangular shape with the X-axis direction as its short side and the Y-axis direction as its long side. The substrate 20 has a substrate front surface 21, a substrate back surface 22 opposite the substrate front surface 21, and first to fourth substrate side surfaces 23 to 26 (see FIG. 2 ) connecting the substrate front surface 21 and the substrate back surface 22. As shown in FIG. 2 , the first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the Y-axis direction, and the third substrate side surface 25 and the fourth substrate side surface 26 constitute both end surfaces of the substrate 20 in the X-axis direction. In the first embodiment, the first substrate side surface 23 and the second substrate side surface 24 each extend in the X-axis direction in a plan view. The third substrate side surface 25 and the fourth substrate side surface 26 each extend in the Y-axis direction in a plan view. The first substrate side surface 23 constitutes the end surface in the +Y direction of both end surfaces of the substrate 20 in the Y-axis direction, and the second substrate side surface 24 constitutes the end surface in the −Y direction. The third substrate side surface 25 constitutes the end surface in the +X direction of both end surfaces of the substrate 20 in the X-axis direction, and the fourth substrate side surface 26 constitutes the end surface in the -X direction. The shape of the substrate 20 can be changed as desired. In one example, the substrate 20 may be rectangular in shape, with the X-axis direction being the longitudinal direction and the Y-axis direction being the lateral direction. The shape of the substrate 20 in plan view may also be square.

[0016] In the first embodiment, the substrate 20 is made of glass epoxy resin. However, the substrate 20 may be made of a material containing ceramic. Examples of the material containing ceramic include aluminum nitride (AlN) and alumina (Al ２ O ３ When the substrate 20 is formed of a material containing ceramic, the heat dissipation performance of the substrate 20 is improved, and therefore the temperatures of the side light emitting element 40 and the top light emitting element 50 can be prevented from becoming excessively high.

[0017] 3 to 5, the semiconductor light-emitting device 10 includes a first wiring 31, a second wiring 32, and a third wiring 33 provided on the substrate front surface 21, and a first electrode 34, a second electrode 35, and a third electrode 36 provided on the substrate back surface 22. The semiconductor light-emitting device 10 also includes a first via 37 that electrically connects the first wiring 31 and the first electrode 34, a second via 38 that electrically connects the second wiring 32 and the second electrode 35, and a third via 39 that electrically connects the third wiring 33 and the third electrode 36.

[0018] The first wiring 31, and the second and third wirings 32 and 33 are arranged at a distance from each other in the longitudinal direction of the substrate 20, i.e., the Y-axis direction, in a plan view. The second wiring 32 and the third wiring 33 are arranged at a distance from each other in the lateral direction of the substrate 20, i.e., the X-axis direction, in a plan view. Each of the first to third wirings 31 to 33 is formed of a material containing copper (Cu), for example. Note that each of the first to third wirings 31 to 33 can be arbitrarily changed within the range of conductive materials.

[0019] As shown in FIG. 3 , the first wiring 31 is disposed closer to the first substrate side surface 23 than the second wiring 32 and the third wiring 33. In a plan view, the first wiring 31 can also be said to be disposed between the first substrate side surface 23 and the second wiring 32 and the third wiring 33 in the Y-axis direction. In a plan view, the second wiring 32 and the third wiring 33 can also be said to be disposed between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction. In a plan view, the first wiring 31 has a rectangular shape with the X-axis direction as the short side direction and the Y-axis direction as the long side direction. In other words, the long side direction of the first wiring 31 coincides with the long side direction of the substrate 20, and the short side direction of the first wiring 31 coincides with the short side direction of the substrate 20. Note that the shape of the first wiring 31 in a plan view can be changed as desired.

[0020] The second wiring 32 is disposed closer to the third substrate side surface 25 than the third wiring 33. It can also be said that the second wiring 32 is disposed between the third wiring 33 and the third substrate side surface 25 in the X-axis direction. When viewed in the Y-axis direction, the second wiring 32 is disposed in a position overlapping the first wiring 31. In the first embodiment, the second wiring 32 is disposed in the center of the substrate surface 21 in the X-axis direction. In plan view, the second wiring 32 has a rectangular shape with the X-axis direction as its short side and the Y-axis direction as its long side. That is, the long side of the second wiring 32 coincides with the long side of the substrate 20, and the short side of the second wiring 32 coincides with the short side of the substrate 20. In plan view, the area of ​​the second wiring 32 is smaller than the area of ​​the first wiring 31. Specifically, the length of the second wiring 32 in the X-axis direction is shorter than the length of the first wiring 31 in the X-axis direction, and the length of the second wiring 32 in the Y-axis direction is shorter than the length of the first wiring 31 in the Y-axis direction. The shape of the second wiring 32 in a plan view can be changed as desired. In one example, the shape of the second wiring 32 in a plan view may be square.

[0021] The third wiring 33 is disposed closer to the fourth substrate side surface 26 than the second wiring 32. It can also be said that the third wiring 33 is disposed between the second wiring 32 and the fourth substrate side surface 26 in the X-axis direction. The third wiring 33 is disposed at a position overlapping the second wiring 32 when viewed from the X-axis direction. The third wiring 33 is disposed closer to the second substrate side surface 24 than the second wiring 32. In other words, the center of the third wiring 33 in the Y-axis direction is located closer to the second substrate side surface 24 than the center of the second wiring 32 in the Y-axis direction. In plan view, the third wiring 33 has a rectangular shape whose longitudinal direction is the X-axis direction and whose lateral direction is the Y-axis direction. In other words, the longitudinal direction of the third wiring 33 coincides with the lateral direction of the substrate 20, and the lateral direction of the third wiring 33 coincides with the longitudinal direction of the substrate 20. In plan view, the area of ​​the third wiring 33 is smaller than the area of ​​the second wiring 32. Specifically, the length of the third wiring 33 in the X-axis direction is shorter than the length of the second wiring 32 in the X-axis direction, and the length of the third wiring 33 in the Y-axis direction is shorter than the length of the second wiring 32 in the Y-axis direction. The shape of the third wiring 33 in a plan view can be changed as desired. For example, the shape of the third wiring 33 in a plan view may be square.

[0022] As shown in FIG. 4 , the first electrode 34, the second electrode 35, and the third electrode 36 are configured as external electrodes when the semiconductor light-emitting device 10 is mounted on a circuit board (not shown). The first electrode 34 is disposed closer to the first substrate side surface 23 than the second electrode 35 and the third electrode 36. In a plan view, the first electrode 34 can also be said to be disposed between the first substrate side surface 23 and the second electrode 35 and the third electrode 36 in the Y-axis direction. In a plan view, the second electrode 35 and the third electrode 36 can also be said to be disposed between the first electrode 34 and the second substrate side surface 24 in the Y-axis direction. As shown in FIG. 5 , the first electrode 34 is disposed in a position overlapping the first wiring 31 in a plan view. As shown in FIG. 4 , the first electrode 34 is rectangular in shape with the X-axis direction as the short side and the Y-axis direction as the long side in a plan view. That is, the longitudinal direction of the first wiring 31 coincides with the longitudinal direction of the substrate 20, and the lateral direction of the first wiring 31 coincides with the lateral direction of the substrate 20. In plan view, the first electrode 34 is approximately one size larger than the first wiring 31. Note that the shape of the first electrode 34 in plan view can be changed as desired.

[0023] The second electrode 35 is disposed closer to the third substrate side surface 25 than the third electrode 36. It can also be said that the second electrode 35 is disposed between the third electrode 36 and the third substrate side surface 25 in the X-axis direction. When viewed in the Y-axis direction, the second electrode 35 is disposed in a position overlapping the first electrode 34. In the first embodiment, the second electrode 35 is disposed in the center of the substrate rear surface 22 in the X-axis direction. As shown in FIG. 5 , the second electrode 35 is disposed in a position overlapping the second wiring 32 in a plan view. As shown in FIG. 4 , the second electrode 35 has a rectangular shape in a plan view, with the X-axis direction being the short side direction and the Y-axis direction being the long side direction. In other words, the long side direction of the second electrode 35 coincides with the long side direction of the substrate 20, and the short side direction of the second electrode 35 coincides with the short side direction of the substrate 20. In a plan view, the area of ​​the second electrode 35 is smaller than the area of ​​the first electrode 34. Specifically, the length of the second electrode 35 in the X-axis direction is shorter than the length of the first electrode 34 in the X-axis direction, and the length of the second electrode 35 in the Y-axis direction is shorter than the length of the first electrode 34 in the Y-axis direction. In plan view, the second electrode 35 is approximately one size larger than the second wiring 32. The shape of the second electrode 35 in plan view can be changed as desired. In one example, the shape of the second electrode 35 in plan view may be square.

[0024] The third electrode 36 is disposed closer to the fourth substrate side surface 26 than the second electrode 35. It can also be said that the third electrode 36 is disposed between the second electrode 35 and the fourth substrate side surface 26 in the X-axis direction. The third electrode 36 is disposed at a position overlapping the second electrode 35 when viewed in the X-axis direction. The third electrode 36 is disposed closer to the second substrate side surface 24 than the second electrode 35. In other words, the center of the third electrode 36 in the Y-axis direction is located closer to the second substrate side surface 24 than the center of the second electrode 35 in the Y-axis direction. The third electrode 36 has a rectangular shape in plan view, with the X-axis direction as its longitudinal direction and the Y-axis direction as its lateral direction. In other words, the longitudinal direction of the third electrode 36 coincides with the lateral direction of the substrate 20, and the lateral direction of the third electrode 36 coincides with the longitudinal direction of the substrate 20. In plan view, the area of ​​the third electrode 36 is smaller than the area of ​​the second electrode 35. Specifically, the length of the third electrode 36 in the X-axis direction is shorter than the length of the second electrode 35 in the X-axis direction, and the length of the third electrode 36 in the Y-axis direction is shorter than the length of the second electrode 35 in the Y-axis direction. The shape of the third electrode 36 in a plan view can be changed as desired. For example, the shape of the third electrode 36 in a plan view may be square.

[0025] 3 to 5, a plurality of first vias 37 are provided. Each first via 37 is arranged at a position overlapping both the first wiring 31 and the first electrode 34 in a plan view. The multiple first vias 37 are arranged at a distance from each other in both the X-axis direction and the Y-axis direction. Each first via 37 penetrates the substrate 20 in the Z-axis direction. Each first via 37 is in contact with both the first wiring 31 and the first electrode 34.

[0026] A plurality of second vias 38 (two in the first embodiment) are provided. Each second via 38 is disposed at a position overlapping both the second wiring 32 and the second electrode 35 in a plan view. The plurality of second vias 38 are arranged in a line spaced apart from each other in the Y-axis direction. Each second via 38 penetrates the substrate 20 in the Z-axis direction. Each second via 38 is in contact with both the second wiring 32 and the second electrode 35.

[0027] The third via 39 is disposed at a position overlapping both the third wiring 33 and the third electrode 36 in a plan view. The third via 39 penetrates the substrate 20 in the Z direction. The third via 39 is in contact with both the third wiring 33 and the third electrode 36.

[0028] Each of the first vias 37, each of the second vias 38, and each of the third vias 39 is formed of a material containing Cu, for example. Note that each of the first vias 37, each of the second vias 38, and each of the third vias 39 is not limited to Cu and can be changed arbitrarily as long as it is a conductive member.

[0029] The number of each of the first vias 37, the second vias 38, and the third vias 39 can be changed as desired. In one example, the number of first vias 37 may be one. In one example, the number of second vias 38 may be one. In one example, the number of third vias 39 may be multiple.

[0030] As shown in FIGS. 1 and 2 , the side light emitting element 40 is provided on the substrate surface 21. In one example, the side light emitting element 40 is mounted on the first wiring 31. In the first embodiment, the side light emitting element 40 is mounted on the first wiring 31. More specifically, the side light emitting element 40 is joined to the first wiring 31 with a conductive bonding material SD (see FIG. 5 ), such as solder paste or silver paste. Therefore, the side light emitting element 40 is located closer to the first substrate side surface 23 (first sealing end surface 63, described later) than the second wiring 32 and the third wiring 33. In other words, both the second wiring 32 and the third wiring 33 are located closer to the second substrate side surface 24 (second sealing end surface 64, described later) than the side light emitting element 40. In other words, both the second wiring 32 and the third wiring 33 are located closer to the second substrate side surface 24 (second sealing end surface 64, described later) than the side light emitting element 40. In other words, both the second wiring 32 and the third wiring 33 are located closer to the second substrate side surface 24 (second sealing end surface 64) than the second light-emitting side surface LS2, described later, of the side light emitting element 40.

[0031] The side light emitting element 40 is a semiconductor laser element that emits light in a predetermined wavelength band, and is, for example, a laser diode. The side light emitting element 40 functions as a light source for the semiconductor light emitting device 10. The side light emitting element 40 is an edge-emitting laser element. There are no particular limitations on the configuration of the side light emitting element 40 as an edge-emitting laser element, but in the first embodiment, a Fabry-Perot laser diode element is used.

[0032] The side light emitting element 40 is formed in a flat plate shape with its thickness direction in the Z-axis direction. In a plan view, the side light emitting element 40 has a rectangular shape with a long side and a short side. In the first embodiment, the side light emitting element 40 is arranged so that its long side is aligned with the Y-axis direction and its short side is aligned with the X-axis direction.

[0033] As shown in Figures 2 and 5, the side light emitting element 40 has an element front surface 41, an element back surface 42 facing the opposite side to the element front surface 41, and first to fourth element side surfaces 43 to 46 connecting the element front surface 41 and the element back surface 42.

[0034] The element front surface 41 faces the same side as the substrate front surface 21 of the substrate 20, and the element back surface 42 faces the substrate front surface 21. The first element side surface 43 and the second element side surface 44 constitute both end faces in the longitudinal direction of the side light emitting element 40, and the third element side surface 45 and the fourth element side surface 46 constitute both end faces in the lateral direction of the side light emitting element 40. In the first embodiment, the first element side surface 43 and the second element side surface 44 constitute both end faces in the Y-axis direction of the side light emitting element 40, and the third element side surface 45 and the fourth element side surface 46 constitute both end faces in the X-axis direction of the side light emitting element 40. In the first embodiment, the first element side surface 43 constitutes the end face in the +Y direction of the both end faces in the Y-axis direction of the side light emitting element 40, and faces the same side as the first substrate side surface 23. The second element side surface 44 constitutes the end face in the −Y direction of the both end faces in the Y-axis direction of the side light emitting element 40, and faces the same side as the second substrate side surface 24. The third element side surface 45 constitutes the end surface in the +X direction of both end surfaces of the side light emitting element 40 in the X axis direction, and faces the same side as the third substrate side surface 25. The fourth element side surface 46 constitutes the end surface in the −X direction of both end surfaces of the side light emitting element 40 in the X axis direction, and faces the same side as the fourth substrate side surface 26.

[0035] In the first embodiment, the first element side surface 43 constitutes a first light-emitting side surface LS1 that emits laser light from the side light emitting element 40. Because the first element side surface 43 faces a direction intersecting the thickness direction of the substrate 20 (in the first embodiment, a direction perpendicular to the thickness direction of the substrate 20), the first light-emitting side surface LS1 can be said to face a direction intersecting (perpendicular to) the thickness direction of the substrate 20. The first element side surface 43 (first light-emitting side surface LS1) faces the same side as the first substrate side surface 23. Therefore, in a plan view, the side light emitting element 40 emits laser light that is primarily directed in the +Y direction. In the first embodiment, the +Y direction corresponds to the "first direction." In other words, the first light-emitting side surface LS1 faces the first direction.

[0036] The second element side surface 44 constitutes a second light-emitting side surface LS2 that emits laser light from the side light emitting element 40. Because the second element side surface 44 faces a direction intersecting the thickness direction of the substrate 20 (a direction perpendicular to the thickness direction of the substrate 20 in the first embodiment), the second light-emitting side surface LS2 can be said to face a direction intersecting (orthogonal to) the thickness direction of the substrate 20. The second element side surface 44 (first light-emitting side surface LS2) faces the same side as the second substrate side surface 24. Therefore, in a plan view, the side light emitting element 40 emits laser light that is primarily directed in the -Y direction. Here, in the first embodiment, the -Y direction corresponds to a "second direction opposite to the first direction." In other words, the second light-emitting side surface LS2 faces the second direction.

[0037] The output of the laser light emitted from the first light-emitting side surface LS1 and the output of the laser light emitted from the second light-emitting side surface LS2 are different from each other. In the first embodiment, the ratio of the output of the laser light emitted from the first light-emitting side surface LS1 to the output of the laser light emitted from the second light-emitting side surface LS2 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective film formed on the first light-emitting side surface LS1 and the second light-emitting side surface LS2. In the first embodiment, the reflectance of the reflective film formed on the first light-emitting side surface LS1 is set to be lower than the reflectance of the reflective film formed on the second light-emitting side surface LS2.

[0038] 1 and 2, the top-surface light emitting element 50 is provided on the substrate surface 21. In one example, the top-surface light emitting element 50 is mounted on the second wiring 32. In the first embodiment, the top-surface light emitting element 50 is mounted on the second wiring 32. More specifically, the top-surface light emitting element 50 is bonded to the second wiring 32 by a conductive bonding material SD (see FIG. 5).

[0039] The top light emitting element 50 is disposed at a position facing the second light emitting side surface LS2 (second substrate side surface 44) of the side light emitting element 40 while being spaced apart from the side light emitting element 40 in the Y axis direction. The top light emitting element 50 is disposed closer to the second substrate side surface 24 than the side light emitting element 40. The top light emitting element 50 is disposed at a distance from the second light emitting side surface LS2 (second element side surface 24) of the side light emitting element 40 in the −Y direction (second direction).

[0040] 5 , side light emitting element 40 has an anode electrode 47 formed on element front surface 41 and a cathode electrode 48 formed on element back surface 42. Cathode electrode 48 is in contact with conductive bonding material SD. That is, cathode electrode 48 is electrically connected to first wiring 31 by conductive bonding material SD. Therefore, cathode electrode 48 is electrically connected to first electrode 34 via first wiring 31 and multiple first vias 37.

[0041] The semiconductor light-emitting device 10 includes a wire W1 that electrically connects the anode electrode 47 and the third wiring 33. As shown in FIG. 2 , the wire W1 extends toward the second substrate side surface 24 in a plan view, approaching the fourth substrate side surface 26. The wire W1 is made of, for example, gold (Au), silver (Ag), aluminum (Al), or Cu. The anode electrode 47 is electrically connected to the third electrode 36 via the third wiring 33 and the third via 39.

[0042] The wire W1 is a bonding wire formed by a wire bonding device. In the first embodiment, the bonded portion of the wire W1 to the third wiring 33 is the first bonded portion, and the bonded portion of the wire W1 to the anode electrode 47 is the second bonded portion. This allows the height (maximum height) of the wire W1 to be lower than in a configuration in which the bonded portion of the wire W1 to the anode electrode 47 is the first bonded portion, and the bonded portion of the wire W1 to the third wiring 33 is the second bonded portion. Note that the bonded portion of the wire W1 to the anode electrode 47 may be the first bonded portion, and the bonded portion of the wire W1 to the third wiring 33 may be the second bonded portion.

[0043] The top-surface light-emitting element 50 is a semiconductor laser element that emits light in a predetermined wavelength band, and in one example is a surface-emitting laser element. The top-surface light-emitting element 50 functions as a light source for the semiconductor light-emitting device 10 together with the side-surface light-emitting element 40. The configuration of the top-surface light-emitting element 50 as a surface-emitting laser element is not particularly limited, but in the first embodiment, a VCSEL (Vertical Cavity Surface Emitting Laser) is adopted. Note that the top-surface light-emitting element 50 may be an LED (Light Emitting Diode) element instead of a semiconductor laser element.

[0044] The top-surface light-emitting element 50 has an element front surface 51 and an element back surface 52 facing the opposite side to the element front surface 51. The element front surface 51 faces the same side as the substrate front surface 21, and the element back surface 52 faces the substrate front surface 21. Here, in the first embodiment, the element front surface 51 includes a light-emitting upper surface 53 that emits laser light of the top-surface light-emitting element 50. Therefore, the light-emitting upper surface 53 faces the same side as the substrate front surface 21. The light-emitting upper surface 53 emits laser light that is mainly directed in the +Z direction.

[0045] At least one of the wavelength and output of the side light emitting element 40 and the top light emitting element 50 is different from each other. In the first embodiment, the output of the laser light of the side light emitting element 40 is different from the output of the laser light of the top light emitting element 50. On the other hand, the wavelength of the laser light of the side light emitting element 40 is the same as the wavelength of the laser light of the top light emitting element 50.

[0046] The wavelength of the laser light emitted from the side light emitting element 40 and the wavelength of the laser light emitted from the top light emitting element 50 may be different from each other, and the output of the laser light emitted from the side light emitting element 40 and the output of the laser light emitted from the top light emitting element 50 may be different from each other. Also, the output of the laser light emitted from the side light emitting element 40 and the output of the laser light emitted from the top light emitting element 50 may be the same, while the wavelength of the laser light emitted from the side light emitting element 40 and the wavelength of the laser light emitted from the top light emitting element 50 may be different from each other.

[0047] Furthermore, both the wavelength and the output power of the side light emitting element 40 and the top light emitting element 50 may be the same. In other words, the output power of the laser light of the side light emitting element 40 and the top light emitting element 50 may be the same, and the wavelength of the laser light of the side light emitting element 40 and the top light emitting element 50 may be the same.

[0048] 2 and 5 , the top-surface light emitting element 50 has an anode electrode 54 formed in a region of the element front surface 51 that is different from the light-emitting upper surface 53, and a cathode electrode 55 formed on the element back surface 52. The cathode electrode 55 is in contact with the conductive bonding material SD. That is, the cathode electrode 55 is electrically connected to the second wiring 32 by the conductive bonding material SD. Therefore, the cathode electrode 55 is electrically connected to the second electrode 35 via the second wiring 32 and the plurality of second vias 38.

[0049] The semiconductor light-emitting device 10 includes a wire W2 that electrically connects the anode electrode 54 and the third wiring 33. The wire W2 is formed, for example, from the same material as the wire W1. The anode electrode 54 is electrically connected to the third electrode 36 via the third wiring 33 and the third via 39. In this manner, the third wiring 33 is electrically connected to both the anode electrode 47 of the side light-emitting element 40 and the anode electrode 54 of the top-surface light-emitting element 50. Therefore, the third electrode 36 electrically connected to the third wiring 33 is configured as a common external electrode for the anode electrode 47 of the side light-emitting element 40 and the anode electrode 54 of the top-surface light-emitting element 50.

[0050] The wire W2 is a bonding wire formed by a wire bonding device. In the first embodiment, the bonded portion of the wire W2 to the third wiring 33 is the first bonded portion, and the bonded portion of the wire W2 to the anode electrode 54 is the second bonded portion. This allows the height (maximum height) of the wire W2 to be lower than in a configuration in which the bonded portion of the wire W2 to the anode electrode 54 is the first bonded portion, and the bonded portion of the wire W2 to the third wiring 33 is the second bonded portion. Note that the bonded portion of the wire W2 to the anode electrode 54 may be the first bonded portion, and the bonded portion of the wire W2 to the third wiring 33 may be the second bonded portion.

[0051] As shown in Figures 1, 2, and 5, the semiconductor light-emitting device 10 of the first embodiment further includes a translucent sealing resin 60 that seals both the side light-emitting element 40 and the top light-emitting element 50, and a side wall 70 that surrounds the sealing resin 60.

[0052] The sealing resin 60 seals the first wiring 31, the second wiring 32, the third wiring 33, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2 while in contact with the substrate surface 21. The sealing resin 60 is provided on the substrate 20. The sealing resin 60 serves to diffuse (scatter) the laser light emitted from both the side light emitting element 40 and the top light emitting element 50 while allowing it to transmit. The sealing resin 60 is made of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin. In one example, the sealing resin 60 is made of a silicone resin.

[0053] The sealing resin 60 has a sealing surface 61 facing the same side as the substrate surface 21, and first to fourth sealing end faces 63 to 66 intersecting with the sealing surface 61. In the first embodiment, the sealing surface 61 is a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. In a plan view, the area of ​​the sealing surface 61 is smaller than the area of ​​the substrate surface 21.

[0054] 2, in the first embodiment, the first to fourth sealing end faces 63 to 66 are sealing end faces that are perpendicular to the sealing surface 61. The first sealing end face 63 and the second sealing end face 64 constitute both end faces of the sealing resin 60 in the Y-axis direction. Each of the first sealing end face 63 and the second sealing end face 64 extends along the X-axis direction in a plan view. The third sealing end face 65 and the fourth sealing end face 66 constitute both end faces of the sealing resin 60 in the X-axis direction. Each of the third sealing end face 65 and the fourth sealing end face 66 extends along the Y-axis direction in a plan view.

[0055] The first sealing end face 63 faces the same side as the first substrate side face 23, and the second sealing end face 64 faces the same side as the second substrate side face 24. In other words, the second sealing end face 64 is the end face opposite to the first sealing end face 63. In the first embodiment, the first sealing end face 63 is formed to be flush with the first substrate side face 23. The first sealing end face 63 is disposed at a distance in the +Y direction (first direction) from the first light-emitting side face LS1 of the side light emitting element 40. The second sealing end face 64 is disposed closer to the first substrate side face 23 than the second substrate side face 24. In other words, the second sealing end face 64 is located between the side light emitting element 40 and the second substrate side face 24 in the Y-axis direction. The second sealing end face 64 is disposed at a distance in the -Y direction (second direction) from the second light-emitting side face LS2 of the side light emitting element 40.

[0056] The first sealed end face 63 faces the same side as the first element side face 43 of the side light emitting element 40. In other words, the first sealed end face 63 faces the same side as the first light-emitting side face LS1. Therefore, it can be said that the side light emitting element 40 includes a first light-emitting side face LS1 that emits laser light toward the first sealed end face 63. The second sealed end face 64 faces the same side as the second element side face 44 of the side light emitting element 40. In other words, the second sealed end face 64 faces the same side as the second light-emitting side face LS2. Therefore, it can be said that the side light emitting element 40 includes a second light-emitting side face LS2 that emits laser light toward the second sealed end face 64.

[0057] In the first embodiment, the first sealing end face 63 is a diced surface. In this case, cutting marks due to the dicing process are formed on the first sealing end face 63. In one example, the first sealing end face 63 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of the first sealing end face 63 may be greater than the arithmetic mean roughness (Ra) of the sealing surface 61. As a result, the laser light emitted from the first light-emitting side face LS1 is scattered as it passes through the first sealing end face 63, thereby widening the beam angle of the laser light emitted from the semiconductor light-emitting device 10.

[0058] The third sealing end face 65 faces the same side as the third substrate side face 25, and the fourth sealing end face 66 faces the same side as the fourth substrate side face 26. In the first embodiment, the third sealing end face 65 is arranged closer to the fourth substrate side face 26 than the third substrate side face 25. It can also be said that the third sealing end face 65 is located between the side light emitting element 40 and the third substrate side face 25 in the X-axis direction. The fourth sealing end face 66 is arranged closer to the third substrate side face 25 than the fourth substrate side face 26. It can also be said that the fourth sealing end face 66 is located between the side light emitting element 40 and the fourth substrate side face 26 in the X-axis direction.

[0059] The sealing resin 60 includes a diffusing material 67 that diffuses light. More specifically, the diffusing material 67 diffuses light inside the sealing resin 60 by reflecting (scattering) the light at the interface between the resin in the sealing resin 60 and the diffusing material 67. As a result, the diffusing material 67 diffuses the laser light emitted from each of the side light emitting element 40 and the top light emitting element 50 inside the sealing resin 60, thereby serving to widen the beam angle of the laser light emitted from the sealing resin 60.

[0060] The material of the diffusing material 67 is not particularly limited, but for example, silica or other glass materials can be used. In the first embodiment, spherical silica filler is used as the diffusing material 67. The particle size of the diffusing material 67 is not particularly limited, but for example, a particle size that is sufficiently small relative to the wavelength of the laser light emitted from each of the side light emitting element 40 and the top light emitting element 50 is selected so that scattering occurs predominantly.

[0061] The compounding ratio of the diffusing material 67 to the resin of the sealing resin 60 is not particularly limited, and may be any ratio greater than 0% and less than 100%. The greater the compounding ratio of the diffusing material 67, the wider the beam angle of the laser light emitted from the semiconductor light emitting device 10. Furthermore, by limiting the upper limit of the compounding ratio of the diffusing material 67 to a predetermined value, a significant decrease in the laser light output and radiation intensity of the semiconductor light emitting device 10 can be suppressed. For example, in the first embodiment, the compounding ratio of the diffusing material 67 is preferably selected in the range greater than 0% and not more than 60%, and more preferably selected in the range of 20% to 60%.

[0062] In the first embodiment, a material having a smaller thermal expansion coefficient than the resin of the sealing resin 60 is selected as the diffusion material 67. In this configuration, the diffusion material 67 can reduce the thermal stress generated in the sealing resin 60 compared to when the sealing resin 60 is made of resin alone. This can prevent the wires W1, W2 from breaking due to the thermal stress of the sealing resin 60.

[0063] The diffusing material 67 is dispersed as fine particles in the sealing resin 60. The diffusing material 67 is mixed with the sealing resin 60 at a predetermined compounding ratio. In the first embodiment, the diffusing material 67 is mixed into the sealing resin 60 so that the laser light from each of the side light emitting element 40 and the top light emitting element 50 is scattered at positions different from the peak positions of the laser light output of the side light emitting element 40 and the top light emitting element 50. In one example, the diffusing material 67 is dispersed evenly within the sealing resin 60.

[0064] The sidewall 70 is provided on the substrate 20. The sidewall 70 is formed, for example, from a light-blocking material. An example of the light-blocking material is black epoxy resin. Heat-resistant engineering plastics can also be used as the material for the sidewall 70. As shown in FIG. 2, the sidewall 70 is disposed on the outer periphery of the substrate 20. The material for the sidewall 70 can be changed as desired. In one example, a light-transmitting material may be used for the sidewall 70. In another example, the sidewall 70 may be formed from a metal material, ceramic, or the like instead of a resin material.

[0065] The side wall 70 has a pair of first side wall portions 71 spaced apart from each other and a second side wall portion 72 connecting the pair of first side wall portions 71. In the first embodiment, the pair of first side wall portions 71 and the pair of second side wall portions 72 are integrally formed. In one example, the side wall 70 is formed by resin molding.

[0066] The pair of first sidewalls 71 are arranged spaced apart from each other in the X-axis direction. In a plan view, each first sidewall 71 extends in the Y-axis direction, i.e., the longitudinal direction of the substrate 20. In a plan view, the second sidewall 72 extends in the X-axis direction, i.e., the lateral direction of the substrate 20. The second sidewall 72 is disposed closer to the second substrate side surface 24 of the substrate 20 than both the side light emitting element 40 and the top light emitting element 50.

[0067] The pair of first side wall portions 71 are arranged on both sides of the sealing resin 60 in the X-axis direction. One of the pair of first side wall portions 71 is in contact with the third sealing end surface 65 of the sealing resin 60, and the other is in contact with the fourth sealing end surface 66 of the sealing resin 60. The second side wall portion 72 covers the second sealing end surface 64 of the sealing resin 60. The second side wall portion 72 is in contact with the second sealing end surface 64. As such, the side wall 70 surrounds the sealing resin 60 and has an opening that exposes the first sealing end surface 63. Therefore, it can be said that the side wall 70 surrounds both the side light emitting element 40 and the top light emitting element 50 and has an opening that exposes the first light-emitting side surface LS1 of the side light emitting element 40.

[0068] 2 , in a plan view, the area of ​​first wiring 31 is larger than the area of ​​side light emitting element 40. More specifically, the length of first wiring 31 in the X-axis direction is longer than the length of side light emitting element 40 in the X-axis direction, and the length of first wiring 31 in the Y-axis direction is longer than the length of side light emitting element 40 in the Y-axis direction.

[0069] Side light emitting element 40 is disposed in a portion of first wiring 31 closer to second wiring 32 (second substrate side surface 24). More specifically, the center of side light emitting element 40 in the Y-axis direction is located closer to second wiring 32 (second substrate side surface 24) than the center of first wiring 31 in the Y-axis direction.

[0070] The first wiring 31 includes a first end face 31A and a second end face 31B that constitute both end faces of the first wiring 31 in the Y-axis direction. The first end face 31A is the end face of the both end faces of the first wiring 31 that is closer to the first substrate side face 23, and the second end face 31B is the end face of the both end faces of the first wiring 31 that is closer to the second substrate side face 24. In the first embodiment, the first end face 31A is arranged more inward than the first substrate side face 23 (closer to the second substrate side face 24). In a plan view, the first end face 31A is arranged closer to the first substrate side face 23 than the center in the Y-axis direction between the first substrate side face 23 and the first element side face 43 (first light-emitting side face LS1) of the side light emitting element 40.

[0071] In a plan view, the length of the first wiring 31 in the Y-axis direction is longer than the length of the side light emitting element 40 in the Y-axis direction. Therefore, the first wiring 31 includes a first extension portion 31C that is a portion between the first light-emitting side surface LS1 and the first end surface 31A of the side light emitting element 40, and a second extension portion 31D that is a portion between the second light-emitting side surface LS2 and the second end surface 31B. In this way, it can be said that the first wiring 31 has the first extension portion 31C that is a portion that extends from the first element side surface 43 (first light-emitting side surface LS1) of the side light emitting element 40 toward the first sealed end surface 63. The first extension portion 31C includes the first end surface 31A. The second extension portion 31D includes the second end surface 31B.

[0072] A distance D1 in the Y-axis direction between the first element side surface 43 (first light-emitting side surface LS1) of the side light emitting element 40 and the first end surface 31A of the first wiring 31 is greater than a distance D2 in the Y-axis direction between the second element side surface 44 (second light-emitting side surface LS2) of the side light emitting element 40 and the second end surface 31B of the first wiring 31. Here, the distance D1 can also be said to be the length in the Y-axis direction of the first extension portion 31C, and the distance D2 can also be said to be the length in the Y-axis direction of the second extension portion 31D.

[0073] 6, the laser light emitted by side light emitting element 40 has higher directivity than that of a light emitting diode (LED). The laser light from side light emitting element 40 configured as a Fabry-Perot laser diode element as in the first embodiment is emitted in the +Y direction, which is approximately perpendicular to the thickness direction (Z-axis direction) of substrate 20.

[0074] As shown in FIGS. 6 and 7 , the laser light from the side light emitting element 40 is diffused (scattered) by the diffusing material 67. As a result, the laser light includes laser light directed toward the substrate surface 21. The first extension 31C reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the first sealing end face 63 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10. In this manner, it can be said that the semiconductor light emitting device 10 includes a first reflecting portion 80 that reflects at least a portion of the laser light emitted from the first light-emitting side face LS1 of the side light emitting element 40 and directed toward the substrate surface 21. In the first embodiment, the first extension 31C of the first wiring 31 constitutes the first reflecting portion 80. In other words, it can be said that the first wiring 31 has a portion that extends from the first light-emitting side face LS1 toward the first sealing end face 63 as the first reflecting portion 80.

[0075] The position of the first end face 31A in the Y-axis direction can be changed as desired. In one example, the first end face 31A may be disposed in a position flush with the first substrate side surface 23 in a plan view. The position of the first end face 31A in the Y-axis direction may be any position as long as the first extension portion 31C has a length that allows it to reflect at least a portion of the laser light directed toward the substrate surface 21.

[0076] 6, the laser light from the top-surface light-emitting element 50 employing a VCSEL is emitted toward the +Z direction, substantially along the Z-axis direction. This laser light is diffused (scattered) by the diffusing material 67. As a result, the laser light emitted from the top-surface light-emitting element 50 includes laser light that travels obliquely toward the first to fourth sealing end faces 63 to 66 as it moves toward the +Z direction. In other words, the beam angle of the laser light emitted from the sealing resin 60 widens. In other words, in a plan view, the area of ​​the region of the laser light emitted from the sealing surface 61 is larger than the area of ​​the light-emitting upper surface 53 of the top-surface light-emitting element 50.

[0077] [Method for Manufacturing Semiconductor Light-Emitting Device] An example of a method for manufacturing the semiconductor light-emitting device 10 will be described with reference to Figures 8 to 11. For convenience, Figures 8 to 11 show a configuration in which four semiconductor light-emitting devices 10 can be manufactured at once, but the present invention is not limited to this, and a configuration in which more semiconductor light-emitting devices 10 can be manufactured at once may also be used.

[0078] The manufacturing method of the semiconductor light emitting device 10 includes the steps of preparing a substrate 820, forming a side wall 870 on the substrate 820, mounting the side light emitting element 40 and the top light emitting element 50, forming wires W1 and W2, forming a sealing resin 860, and singulating.

[0079] As shown in FIG. 8 , in the process of preparing a substrate 820, a substrate 820 is prepared on which a first wiring 31, a second wiring 32, a third wiring 33, a first electrode 34, a second electrode 35, a third electrode 36 (see FIG. 4 for the first to third electrodes 34 to 36), a first via 37, a second via 38, and a third via 39 are formed. The substrate 820 is made of, for example, glass epoxy resin. Alternatively, the substrate 820 may be made of, for example, ceramic. The substrate 820 is formed to a size that includes, for example, a plurality of substrates 20, and has the first wiring 31, the second wiring 32, the third wiring 33, the first electrode 34, the second electrode 35, the third electrode 36, the first via 37, the second via 38, and the third via 39 formed thereon in a number corresponding to the number of substrates 20. Each of the first to third wirings 31 to 33 is provided on a substrate surface 821 of the substrate 820. Each of the first to third electrodes 34 to 36 is provided on a rear surface 822 of the substrate 820 (see FIG. 11).

[0080] 9 , in the step of forming the sidewall 870 on the substrate 820, the sidewall 870 is formed on the substrate 820 by, for example, resin molding. Examples of resin molding include transfer molding and compression molding. By such resin molding, the sidewall 870 is integrated with the substrate 820.

[0081] In the step of forming the sidewall 870 on the substrate 820, the sidewall 870, which is a molded product formed in advance by resin molding such as injection molding, may be attached to the substrate 820 by, for example, an adhesive. This results in the sidewall 870 and the substrate 820 being integrated together. Furthermore, the sidewall 870 is not limited to being made of resin, and may also be made of metal or ceramic. In this case, the pre-formed sidewall 870 may also be joined to the substrate 820 by an adhesive or metal bonding.

[0082] The side wall 870 is a component that constitutes the side wall 70, and is formed as a plurality of unit side walls that surround the first wiring 31, the second wiring 32, and the third wiring 33 in a plan view. The number of the unit side walls is set, for example, according to the number of first wirings 31 on the substrate 820.

[0083] 10 , in the first embodiment, the process of mounting side light emitting element 40 and top light emitting element 50 includes a process of mounting side light emitting element 40 on first wiring 31 and a process of mounting top light emitting element 50 on second wiring 32. In these processes, for example, side light emitting element 40 is die-bonded onto first wiring 31, and top light emitting element 50 is die-bonded onto second wiring 32. As a result, cathode electrode 48 (see FIG. 11 ) of side light emitting element 40 is electrically connected to first wiring 31, and cathode electrode 55 (see FIG. 11 ) of top light emitting element 50 is electrically connected to second wiring 32.

[0084] Next, in the process of forming the wires W1 and W2, the wire W1 electrically connects the anode electrode 47 of the side light emitting element 40 to the third wiring 33, and the wire W2 electrically connects the anode electrode 54 of the top light emitting element 50 to the third wiring 33. The wires W1 and W2 are bonding wires formed using a wire bonding apparatus. In the first embodiment, the wire W1 is bonded to the third wiring 33 side as the first bonding, and the wire W2 is bonded to the anode electrode 47 of the side light emitting element 40 as the second bonding. The wire W2 is bonded to the third wiring 33 side as the first bonding, and the wire W2 is bonded to the anode electrode 54 of the top light emitting element 50 as the second bonding. Note that the wire W1 may be bonded to the anode electrode 47 side as the first bonding, and the wire W2 may be bonded to the third wiring 33 side as the second bonding. The wire W2 may be bonded to the anode electrode 54 side as the first bonding, and the wire W2 is bonded to the third wiring 33 side as the second bonding.

[0085] 11 , in the step of forming the sealing resin 860, the sealing resin 860 is formed by, for example, resin molding in a space surrounded by the substrate 820 and unit side walls of the side wall 870. It can be said that the side wall 870 (unit side wall) surrounds the sealing resin 860.

[0086] The sealing resin 860 seals the first wiring 31, the second wiring 32, the third wiring 33, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2. The sealing resin 860 is formed of a light-transmitting material. In one example, the sealing resin 860 is formed of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin. Here, the sealing resin 860 is formed by, for example, transfer molding or compression molding. Note that the sealing resin 860 may be filled into the space surrounded by the substrate 820 and the unit side walls of the side wall 870 by potting. In the first embodiment, the sealing resin 860 includes a diffusing material 67 (see FIG. 11 ).

[0087] Next, in the singulation step, both the sidewall 870 and the substrate 820 are cut with a dicing blade along the cutting lines CL in FIG. 10 . This forms the substrate 20, the sidewall 70, and the sealing resin 60. The side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 that emits laser light emits laser light toward the first sealing end surface 63 of the sealing resin 60. In other words, the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 faces the same side as the first sealing end surface 63. Through the above steps, the semiconductor light emitting device 10 is manufactured.

[0088] The order of the manufacturing steps for the semiconductor light-emitting device 10 can be changed as desired. In one example, a step of forming sidewalls 870 on the substrate 820 may be performed after the step of mounting the semiconductor light-emitting element 40 and the top-surface light-emitting element 50 and the step of forming the wires W1 and W2, and before the step of forming the sealing resin 860. In this case, in the step of forming the sidewalls 870 on the substrate 820, the sidewalls 870, which are molded products formed in advance by resin molding such as injection molding, may be attached to the substrate 820 with an adhesive, for example. Thereafter, the step of forming the sealing resin 860 and the step of singulating are performed in order.

[0089] [Operation] The operation of the semiconductor light-emitting device 10 of the first embodiment will be described. The semiconductor light-emitting device 10 includes a side light-emitting element 40 that emits laser light in a direction intersecting the thickness direction of the substrate 20, and a top light-emitting element 50 that emits laser light in the thickness direction of the substrate 20. In the first embodiment, the side light-emitting element 40 emits laser light in the +Y direction, and the top light-emitting element 50 emits laser light in the +Z direction. In this way, the semiconductor light-emitting device 10 emits light from two different directions, the +Y direction and the +Z direction. This allows the semiconductor light-emitting device 10 to emit light more widely.

[0090] [Effects] The semiconductor light-emitting device 10 of the first embodiment has the following effects. (1-1) The semiconductor light-emitting device 10 includes a substrate 20 having a substrate surface 21, a side light-emitting element 40 provided on the substrate surface 21 and having a first light-emitting side surface LS1 through which light is emitted, and a top light-emitting element 50 provided on the substrate surface 21 and having a light-emitting upper surface 53 through which light is emitted. The side light-emitting element 40 is arranged with the first light-emitting side surface LS1 facing in a direction intersecting the thickness direction (Z-axis direction) of the substrate 20. The top light-emitting element 50 is arranged with the light-emitting upper surface 53 facing in the thickness direction (Z-axis direction) of the substrate 20.

[0091] With this configuration, the semiconductor light emitting device 10 emits light both in a direction intersecting the thickness direction (Z-axis direction) of the substrate 20 and in the thickness direction of the substrate 20. This allows the semiconductor light emitting device 10 to emit light more widely.

[0092] (1-2) For example, in a semiconductor light-emitting device using an LED element that emits light in only one direction, it is difficult to accommodate higher output from the light source. Therefore, it is conceivable to accommodate higher output by using a semiconductor laser element instead of an LED element.

[0093] However, laser light emitted from a semiconductor laser element has higher directivity than light emitted from an LED element. Therefore, semiconductor laser elements are generally suitable for applications requiring high directivity. Conversely, in fields where semiconductor light-emitting devices using LED elements as light sources are used, a wider beam angle is generally required. For this reason, semiconductor laser elements are generally not suitable for use in semiconductor light-emitting devices using LED elements as light sources. As such, it is difficult to achieve both high output and a wide beam angle in a light source.

[0094] Therefore, in the first embodiment, the side light emitting element 40 employs an edge-emitting laser element as a semiconductor laser element. This allows for higher output power. Furthermore, since the semiconductor light emitting device 10 further includes a top light emitting element 50, as described in (1-1), the semiconductor light emitting device 10 emits light both in the direction intersecting the thickness direction (Z-axis direction) of the substrate 20 and in the thickness direction of the substrate 20, thereby widening the beam angle of the light emitted by the semiconductor light emitting device 10. This allows for both high output power and a wide beam angle of the light source. Furthermore, semiconductor laser elements typically have higher output power and lower power consumption than LED elements. Therefore, by utilizing the side light emitting element 40, which is a semiconductor laser element with the advantages of high output power and low power consumption, the semiconductor light emitting device 10 can be used in applications involving LED elements.

[0095] (1-3) The sealing resin 60 includes a diffusing material 67 that diffuses light. According to this configuration, light emitted from the side light emitting element 40 toward the first sealing end surface 63 is diffused (scattered) inside the sealing resin 60 by the diffusing material 67. Light emitted from the top light emitting element 50 toward the sealing surface 61 is diffused (scattered) inside the sealing resin 60 by the diffusing material 67. This allows the semiconductor light emitting device 10 to further widen the directivity angle of the emitted light.

[0096] (1-4) The semiconductor light emitting device 10 further includes a first reflecting portion 80 that is provided on the first sealing end face 63 side of the first light emitting side face LS1 of the side light emitting element 40 and that reflects at least a portion of the light emitted from the first light emitting side face LS1.

[0097] According to this configuration, the light emitted from the first light-emitting side surface LS1 is reflected by the first reflecting portion 80, and the reflected light is emitted from the first sealing end surface 63 toward a region above the substrate surface 21. Therefore, the amount of light emitted toward a region above the substrate surface 21 can be increased.

[0098] In addition, since light is prevented from being emitted from the first light-emitting side surface LS1 toward a region below the substrate surface 21, for example, when the semiconductor light-emitting device 10 is mounted on a circuit board, light can be prevented from being emitted from the first light-emitting side surface LS1 toward the surface of the circuit board.

[0099] (1-5) The first wiring 31 has, as the first reflecting portion 80, a portion (first extending portion 31C) that extends from the first light-emitting side surface LS1 toward the first sealed end surface 63 in a plan view. With this configuration, the first reflecting portion 80 can be configured without adding a component dedicated to the first reflecting portion 80, thereby suppressing an increase in the number of components of the semiconductor light-emitting device 10.

[0100] (1-6) The semiconductor light emitting device 10 further includes a sidewall 70 formed to surround the side light emitting element 40 and the top light emitting element 50 and having an opening that exposes the first light emitting side surface LS1.

[0101] According to this configuration, when a mounter holds the semiconductor light emitting device 10 when mounting the semiconductor light emitting device 10 on a circuit board, the side wall 70 is held, thereby reducing the external force applied to the sealing resin 60. This reduces the force applied to the wires W1 and W2 sealed in the sealing resin 60.

[0102] (1-7) The length in the X-axis direction of the first extending portion 31C is longer than the length in the X-axis direction of the side light emitting element 40. With this configuration, more of the light traveling from the first light-emitting side surface LS1 toward the substrate surface 21 can be reflected by the first extending portion 31C. Therefore, for example, when the semiconductor light emitting device 10 is mounted on a circuit board, it is possible to further suppress the emission of light from the first light-emitting side surface LS1 toward the surface of the circuit board.

[0103] (1-8) The wire W1 is formed so that the joint with the third wiring 33 is the first bonding and the joint with the anode electrode 47 of the side light emitting element 40 is the second bonding. The wire W2 is formed so that the joint with the third wiring 33 is the first bonding and the joint with the anode electrode 54 of the top light emitting element 50 is the second bonding.

[0104] According to this configuration, the height (maximum height) of each of the wires W1 and W2 from the substrate surface 21 can be reduced; in other words, the distance between the substrate surface 21 and the wires W1 and W2 in the Z-axis direction can be reduced, thereby making it possible to reduce the height of the semiconductor light-emitting device 10.

[0105] (1-9) The compounding ratio of the diffusing material 67 to the sealing resin 60 is selected in the range of more than 0% to not more than 60%. According to this configuration, by selecting the compounding ratio of the diffusing material 67 in the range of more than 0% to not more than 60%, it is possible to suppress a decrease in the output of light emitted from the semiconductor light emitting device 10 and widen the beam angle.

[0106] (1-10) The compounding ratio of the diffusing material 67 to the sealing resin 60 is selected in the range of 20% to 60%. According to this configuration, by selecting the compounding ratio of the diffusing material 67 in the range of 20% to 60%, it is possible to suppress a decrease in the output and a large decrease in the radiant intensity of the light emitted from the semiconductor light emitting device 10 and to widen the beam angle.

[0107] Second Embodiment A semiconductor light-emitting device 10 according to a second embodiment will be described with reference to FIGS. 12 to 16. The semiconductor light-emitting device 10 according to the second embodiment differs from the semiconductor light-emitting device 10 according to the first embodiment mainly in that the sidewall 70 (see FIG. 2) is omitted and in the laser light emission configuration of the side light-emitting element 40. Differences from the first embodiment will be described in detail below, and components common to the semiconductor light-emitting device 10 according to the first embodiment will be designated by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted in FIG. 12 to facilitate understanding of the drawing.

[0108] [Overall Configuration of Semiconductor Light-Emitting Device] Fig. 12 schematically shows the planar structure of the semiconductor light-emitting device 10 of the second embodiment. Figs. 13 and 14 show the general cross-sectional structure of the semiconductor light-emitting device 10, each showing a region of light emitted from the semiconductor light-emitting device 10. In Fig. 13, the region of light is indicated by dots.

[0109] 12 , the sealing resin 60 is formed larger than in the first embodiment by the amount corresponding to the omission of the sidewall 70 from the semiconductor light-emitting device 10. More specifically, in a plan view, the first to fourth sealing end faces 63 to 66 of the sealing resin 60 are disposed at the same positions as the corresponding first to fourth substrate side faces 23 to 26 of the substrate 20. That is, the first sealing end face 63 is flush with the first substrate side face 23, the second sealing end face 64 is flush with the second substrate side face 24, the third sealing end face 65 is flush with the third substrate side face 25, and the fourth sealing end face 66 is flush with the fourth substrate side face 26. Therefore, it can be said that the sealing resin 60 covers the entire substrate surface 21 of the substrate 20.

[0110] In the second embodiment, the first to fourth sealing end faces 63 to 66 are diced surfaces. In this case, cutting marks due to the dicing process are formed on the first to fourth sealing end faces 63 to 66. In one example, the first to fourth sealing end faces 63 to 66 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first to fourth sealing end faces 63 to 66 may be greater than the arithmetic mean roughness (Ra) of the sealing surface 61. This allows the laser light emitted from the first light-emitting side face LS1 to be scattered as it passes through the first sealing end face 63, thereby widening the beam angle of the laser light emitted from the semiconductor light-emitting device 10. Furthermore, the laser light emitted from the second light-emitting side face LS2 to be scattered as it passes through the second sealing end face 64, thereby widening the beam angle of the laser light emitted from the semiconductor light-emitting device 10.

[0111] The dimensions of the substrate 20 in the X-axis and Y-axis directions in plan view may be reduced by the amount corresponding to the omission of the sidewall 70. With this configuration, the semiconductor light-emitting device 10 can be made smaller.

[0112] As shown in Fig. 13, the output of the first laser light emitted from the first light-emitting side surface LS1 in the +Y direction and the output of the second laser light emitted from the second light-emitting side surface LS2 in the -Y direction are both laser light having a predetermined output or more. In other words, in the second embodiment, unlike the first embodiment, laser light of sufficient output is emitted from both the first light-emitting side surface LS1 and the second light-emitting side surface LS2. In the second embodiment, the side light emitting element 40 is configured so that the output of the first laser light and the output of the second laser light are equal to each other. Note that the output of the first laser light and the output of the second laser light may differ from each other within a range equal to or greater than the predetermined output.

[0113] 14 , the semiconductor light emitting device 10 includes a second reflecting portion 90 that reflects a portion of the second laser light emitted from the second light-emitting side surface LS2. In the second embodiment, the second reflecting portion 90 is provided so as to reflect at least a portion of the second laser light emitted from the second light-emitting side surface LS2 that is directed toward the substrate surface 21.

[0114] In the second embodiment, the second reflecting portion 90 includes the second wiring 32. More specifically, in plan view, a region of the second wiring 32 that is different from the top-surface light emitting element 50 configures the second reflecting portion 90.

[0115] The second laser light of the side light emitting element 40 is diffused (scattered) by the diffusing material 67. As a result, the second laser light includes laser light directed toward the substrate surface 21. The second wiring 32 reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10.

[0116] [Method for Manufacturing Semiconductor Light-Emitting Device] An example of a method for manufacturing the semiconductor light-emitting device 10 of the second embodiment will be described with reference to Figures 15 and 16. Note that, for convenience, Figures 15 and 16 show a configuration in which four semiconductor light-emitting devices 10 can be manufactured at once, but the present invention is not limited to this, and a configuration in which more semiconductor light-emitting devices 10 can be manufactured at once may also be used.

[0117] The manufacturing method of the semiconductor light emitting device 10 includes the steps of preparing a substrate 820, mounting the side light emitting element 40 and the top light emitting element 50, forming wires W1 and W2, forming a sealing resin 860, and singulating.

[0118] As shown in FIG. 15 , the process of preparing the substrate 820 is the same as the process of preparing the substrate 820 in the first embodiment. In the second embodiment, the sidewall 70 is omitted, and therefore the process of mounting the side light emitting element 40 and the top light emitting element 50 is performed in a state in which the sidewall 870 (see FIG. 9 ) is not provided on the substrate 820. The process of mounting the side light emitting element 40 and the top light emitting element 50 includes a process of mounting the side light emitting element 40 to the first wiring 31 and a process of mounting the top light emitting element 50 to the second wiring 32. More specifically, the side light emitting element 40 is die-bonded to the first wiring 31, and the top light emitting element 50 is die-bonded to the second wiring 32. Subsequently, the process of forming the wires W1 and W2 is the same as the process of forming the wires W1 and W2 in the first embodiment.

[0119] As shown in FIG. 16 , in the process of forming the sealing resin 860, a frame body 880 is first provided on the substrate 820. The frame body 880 is formed so as to surround, in a plan view, four first wirings 31, four second wirings 32, four third wirings 33, four side light emitting elements 40, and four top light emitting elements 50. The sealing resin 860 is then formed by filling the frame body 880 with a light-transmitting resin material, for example, by potting. The resin material is formed from a material containing at least one of a silicone resin, an epoxy resin, and an acrylic resin. In one example, the sealing resin 860 is formed from a silicone resin. In the second embodiment, the sealing resin 860 includes a diffusing material 67 (see FIG. 14 ).

[0120] The method for forming the sealing resin 860 is not limited to this, and the sealing resin 860 may be formed on the substrate 820 by resin molding. Examples of resin molding include transfer molding and compression molding. After the sealing resin 860 is formed, the frame 880 is removed.

[0121] In the singulation process, both the sealing resin 860 and the substrate 820 are cut with a dicing blade along the cutting lines CL in Fig. 16. This forms the sealing resin 60 and the substrate 20 (both see Fig. 12). Through the above steps, the semiconductor light emitting device 10 is manufactured.

[0122] [Effects] The semiconductor light emitting device 10 of the second embodiment has the following effects: (2-1) The side light emitting element 40 has, as light emitting side surfaces, a first light emitting side surface LS1 facing in a first direction (+Y direction) intersecting the thickness direction (Z-axis direction) of the substrate 20, and a second light emitting side surface LS2 facing in a second direction (-Y direction) opposite to the first direction.

[0123] With this configuration, the side light emitting element 40 emits light in two different directions, the first direction (+Y direction) and the second direction (-Y direction), thereby enabling the semiconductor light emitting device 10 to emit light over a wider area.

[0124] (2-2) The semiconductor light emitting device 10 further includes a second reflecting portion 90 that reflects a portion of the light emitted from the second light emitting side surface LS2 of the side light emitting element 40. The second reflecting portion 90 is provided at a position closer to the second wiring 32 than the second light emitting side surface LS2.

[0125] According to this configuration, the light emitted from the second light-emitting side surface LS2 is reflected by the second reflecting portion 90, and the reflected light is emitted from the sealing surface 61 or the second sealing end face 64 toward a region above the second reflecting portion 90. Therefore, the amount of laser light emitted toward a region above the second reflecting portion 90 can be increased.

[0126] (2-3) The second wiring 32 is disposed at a position closer to the second sealed end surface 64 than the second light-emitting side surface LS2 of the side light emitting element 40. The second reflecting portion 90 is constituted by the second wiring 32.

[0127] According to this configuration, the light directed from the second light-emitting side surface LS2 toward the substrate surface 21 is reflected by the second reflecting portion 90, and the light emitted from the second light-emitting side surface LS2 is emitted from the second sealing end surface 64 or the sealing surface 61 toward a position above the substrate surface 21. Therefore, the amount of laser light emitted toward a region above the substrate surface 21 can be increased.

[0128] In addition, since light is prevented from being emitted from the second light-emitting side surface LS2 toward a region below the substrate surface 21, for example, when the semiconductor light-emitting device 10 is mounted on a circuit board, light can be prevented from being emitted from the second light-emitting side surface LS2 toward the surface of the circuit board.

[0129] Third Embodiment A semiconductor light emitting device 10 according to a third embodiment will be described with reference to FIGS. 17 to 21. The semiconductor light emitting device 10 according to the third embodiment differs from the semiconductor light emitting device 10 according to the first embodiment mainly in that a plurality of side light emitting elements are provided. Differences from the first embodiment will be described in detail below, and components common to the semiconductor light emitting device 10 according to the first embodiment will be designated by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted from FIG. 17 to facilitate understanding of the drawing.

[0130] 17 and 18 , the semiconductor light emitting device 10 includes two first wirings 31P and 31Q instead of the first wiring 31 (see FIG. 3 ). The first wirings 31P and 31Q are arranged spaced apart from each other in the Y-axis direction. The first wirings 31P and 31Q are arranged opposite each other with the second wiring 32 interposed therebetween. In other words, the second wiring 32 is arranged between the first wirings 31P and 31Q in the Y-axis direction. The first wiring 31P is arranged closer to the first substrate side surface 23 than the second wiring 32, and the first wiring 31Q is arranged closer to the second substrate side surface 24 than the second wiring 32.

[0131] The first wirings 31P, 31Q are formed of a material containing Cu, similar to the first wiring 31. The first wirings 31P, 31Q have the same shape and size in a plan view. The first wirings 31P, 31Q have a rectangular shape in a plan view, with the Y-axis direction as the longitudinal direction and the X-axis direction as the lateral direction. The shape and size of the first wirings 31P, 31Q in a plan view are similar to, for example, the first wiring 31 of the first embodiment.

[0132] As shown in FIG. 19 , the semiconductor light-emitting device 10 includes two first electrodes 34P and 34Q instead of the first electrode 34 (see FIG. 4 ). The first electrode 34P and the first electrode 34Q are arranged spaced apart from each other in the Y-axis direction. The first electrode 34P and the first electrode 34Q are arranged opposite each other with the second electrode 35 interposed therebetween. That is, the second electrode 35 is arranged between the first electrode 34P and the first electrode 34Q in the Y-axis direction. The first electrode 34P is arranged closer to the first substrate side surface 23 than the second electrode 35, and the first electrode 34Q is arranged closer to the second substrate side surface 24 than the second electrode 35. In a plan view, the first electrode 34P is arranged in a position overlapping with the first wiring 31P (see FIG. 18 ), and the first electrode 34Q is arranged in a position overlapping with the first wiring 31Q (see FIG. 18 ).

[0133] The first electrodes 34P, 34Q are formed of a material containing Cu, similar to the first electrode 34. The first electrodes 34P, 34Q have the same shape and size in a plan view. The first electrodes 34P, 34Q have a rectangular shape in a plan view, with the Y-axis direction as the longitudinal direction and the X-axis direction as the lateral direction. The shape and size of the first electrodes 34P, 34Q in a plan view are similar to, for example, the first electrode 34 of the first embodiment.

[0134] 18 and 19, the semiconductor light emitting device 10 includes first vias 37P and 37Q instead of the first via 37 (see FIG. 3). In the third embodiment, a plurality of first vias 37P and a plurality of first vias 37Q are provided.

[0135] 20 , each first via 37P electrically connects the first wiring 31P and the first electrode 34P. Each first via 37P is arranged at a position overlapping both the first wiring 31P and the first electrode 34P in a plan view. The multiple first vias 37P are arranged spaced apart from one another in both the X-axis direction and the Y-axis direction. Each first via 37P penetrates the substrate 20 in the Z-axis direction. Each first via 37P is in contact with both the first wiring 31P and the first electrode 34P.

[0136] Each first via 37Q electrically connects the first wiring 31Q and the first electrode 34Q. Each first via 37Q is arranged at a position overlapping both the first wiring 31Q and the first electrode 34Q in a plan view. The multiple first vias 37Q are arranged spaced apart from one another in both the X-axis direction and the Y-axis direction. Each first via 37Q penetrates the substrate 20 in the Z-axis direction. Each first via 37Q is in contact with both the first wiring 31P and the first electrode 34Q. The number of each of the first vias 37P and the second vias 37Q can be arbitrarily changed. In one example, the number of first vias 37P may be one. The number of second vias 37Q may be one. The number of each of the second vias 38 and the third vias 39 can be arbitrarily changed, as in the first embodiment.

[0137] The first side light emitting element 40A is mounted on the first wiring 31P. In the third embodiment, the first side light emitting element 40A is mounted on the first wiring 31P. More specifically, the first side light emitting element 40A is joined to the first wiring 31P by a conductive bonding material SD such as solder paste or silver paste. The second side light emitting element 40B is mounted on the first wiring 31Q. In the third embodiment, the second side light emitting element 40B is mounted on the first wiring 31Q. More specifically, the second side light emitting element 40B is joined to the first wiring 31Q by a conductive bonding material SD such as solder paste or silver paste.

[0138] Each of the first side light emitting element 40A and the second side light emitting element 40B is a semiconductor laser element that emits light in a predetermined wavelength band and functions as a light source for the semiconductor light emitting device 10. Each of the first side light emitting element 40A and the second side light emitting element 40B is an edge-emitting laser element. The configuration of each of the first side light emitting element 40A and the second side light emitting element 40B as an edge-emitting laser element is not particularly limited, but in the third embodiment, a Fabry-Perot laser diode element is used. Each of the first side light emitting element 40A and the second side light emitting element 40B has, for example, the same shape and size as the side light emitting element 40 of the first embodiment.

[0139] The configurations of the first side light emitting element 40A and the second side light emitting element 40B are the same as the configuration of the side light emitting element 40 of the first embodiment. Therefore, the same reference numerals are used for the components of the first side light emitting element 40A and the second side light emitting element 40B that are common to the side light emitting element 40. However, different reference numerals are used for the light-emitting side surfaces of the first side light emitting element 40A and the second side light emitting element 40B.

[0140] Since first side light emitting element 40A is joined to first wiring 31P with conductive bonding material SD, cathode electrode 48 of first side light emitting element 40A is electrically connected to first wiring 31P. Therefore, cathode electrode 48 of first side light emitting element 40A is electrically connected to first electrode 34P.

[0141] Since the second side light emitting element 40B is joined to the first wiring 31Q with the conductive adhesive SD, the cathode electrode 48 of the second side light emitting element 40B is electrically connected to the first wiring 31Q and therefore to the first electrode 34Q.

[0142] 17 , the first side light emitting element 40A and the second side light emitting element 40B are arranged spaced apart from each other in the Y-axis direction. The first side light emitting element 40A is disposed closer to the first sealing end face 63 (first substrate side face 23) than the top light emitting element 50, and the second side light emitting element 40B is disposed closer to the second sealing end face 64 (second substrate side face 24) than the top light emitting element 50. In other words, when viewed from the X-axis direction, the top light emitting element 50 is disposed between the first side light emitting element 40A and the second side light emitting element 40B.

[0143] The first side light emitting element 40A has a first light emitting side surface LS1 and a second light emitting side surface LS2. The first light emitting side surface LS1 is formed on a first element side surface 43 of the first side light emitting element 40A, and the second light emitting side surface LS2 is formed on a second element side surface 44 of the first side light emitting element 40A. The first side light emitting element 40A is arranged so that the first light emitting side surface LS1 faces the first substrate side surface 23 and the second light emitting side surface LS2 faces the second substrate side surface 24.

[0144] In the third embodiment, the first side light emitting element 40A is arranged to emit laser light in the +Y direction (first direction). More specifically, the first side light emitting element 40A is configured to emit laser light in the +Y direction from the first light emitting side surface LS1 and to emit laser light in the −Y direction from the second light emitting side surface LS2.

[0145] The output power of the laser light emitted from the first light-emitting side surface LS1 and the output power of the laser light emitted from the second light-emitting side surface LS2 are different from each other. In the third embodiment, the ratio between the output power of the laser light emitted from the first light-emitting side surface LS1 and the output power of the laser light emitted from the second light-emitting side surface LS2 is, for example, 9:1. In this manner, the first side light emitting element 40A is arranged to emit light from the first light-emitting side surface LS1 in the +Y direction (first direction). The configuration for adjusting the output power of the laser light is the same as in the first embodiment.

[0146] The second side light emitting element 40B has a third light emitting side surface LS3 and a fourth light emitting side surface LS4. The third light emitting side surface LS3 is formed on the first element side surface 43 of the second side light emitting element 40B, and the fourth light emitting side surface LS4 is formed on the second element side surface 44 of the second side light emitting element 40B. The second side light emitting element 40B is arranged so that the third light emitting side surface LS3 faces the first substrate side surface 23 and the fourth light emitting side surface LS4 faces the second substrate side surface 24. In the third embodiment, the first side light emitting element 40A and the second side light emitting element 40B are arranged side by side in a plan view with the second light emitting side surface LS2 and the third light emitting side surface LS3 facing each other across a gap. The second light emitting side surface LS2 and the third light emitting side surface LS3 face each other across the top light emitting element 50 when viewed from the X-axis direction. Here, the X-axis direction can be considered to be a direction perpendicular to both the thickness direction (Z-axis direction) and the first direction (+Y direction) of the substrate 20.

[0147] In the third embodiment, the second side light emitting element 40B is arranged to emit laser light in the −Y direction (second direction). More specifically, the second side light emitting element 40B is configured to emit laser light in the +Y direction from the third light emitting side surface LS3 and in the −Y direction from the fourth light emitting side surface LS4. The output of the laser light emitted from the third light emitting side surface LS3 and the fourth light emitting side surface LS4 are different from each other. In the third embodiment, the ratio of the output of the laser light emitted from the third light emitting side surface LS3 to the output of the laser light emitted from the fourth light emitting side surface LS4 is, for example, 1:9. In this way, the second side light emitting element 40B is configured to emit light from the fourth light emitting side surface LS4 in the −Y direction (second direction). The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the third light emitting side surface LS3 and the fourth light emitting side surface LS4. In the third embodiment, the reflectance of the reflective film formed on the fourth light-emitting side surface LS4 is set to be lower than the reflectance of the reflective film formed on the third light-emitting side surface LS3.

[0148] In the third embodiment, the output power of the laser light emitted from the first light-emitting side surface LS1 of the first side light emitting element 40A is the same as the output power of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light emitting element 40B. Also, the wavelength of the laser light emitted from the first light-emitting side surface LS1 of the first side light emitting element 40A is the same as the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light emitting element 40B.

[0149] In addition, at least one of the wavelength and output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A and the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B may be different from each other.

[0150] The semiconductor light-emitting device 10 includes a wire WA1 electrically connecting the anode electrode 47 of the first side light-emitting element 40A to the third wiring 33, and a wire WB1 electrically connecting the anode electrode 47 of the second side light-emitting element 40B to the third wiring 33. The wires WA1 and WB1 are formed of, for example, the same material as the wire W1 of the first embodiment. Because the third wiring 33 is connected to the anode electrode 54 of the top-surface light-emitting element 50 by the wire W2, the third wiring 33 is electrically connected in common to the anode electrode 47 of the first side light-emitting element 40A, the anode electrode 47 of the second side light-emitting element 40B, and the anode electrode 54 of the top-surface light-emitting element 50. Therefore, the third electrode 36 electrically connected to the third wiring 33 serves as a common external electrode for the anode electrode 47 of the first side light-emitting element 40A, the anode electrode 47 of the second side light-emitting element 40B, and the anode electrode 54 of the top-surface light-emitting element 50.

[0151] In the sealing resin 60 sealing the first side light emitting element 40A and the second side light emitting element 40B, the first sealing end surface 63 is disposed spaced apart in the +Y direction from the first light-emitting side surface LS1 of the first side light emitting element 40A. The second sealing end surface 64 is disposed spaced apart in the −Y direction from the second light-emitting side surface LS2 of the second side light emitting element 40B.

[0152] In the third embodiment, each of the first sealing end face 63 and the second sealing end face 64 is a diced surface. In this case, each of the first sealing end face 63 and the second sealing end face 64 has cutting marks due to the dicing process. In one example, each of the first sealing end face 63 and the second sealing end face 64 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first sealing end face 63 and the second sealing end face 64 may be greater than the arithmetic mean roughness (Ra) of the sealing surface 61. As a result, the laser light emitted from the first light-emitting side face LS1 is scattered as it passes through the first sealing end face 63, and the laser light emitted from the second light-emitting side face LS2 is scattered as it passes through the second sealing end face 64, thereby widening the beam angle of the laser light emitted from the semiconductor light-emitting device 10.

[0153] 17 , in plan view, the area of ​​the first wiring 31P is larger than the area of ​​the first side light emitting element 40A. In plan view, the area of ​​the first wiring 31Q is larger than the area of ​​the second side light emitting element 40B. More specifically, the length in the Y-axis direction of the first wiring 31P is longer than the length in the Y-axis direction of the first side light emitting element 40A. The length in the Y-axis direction of the first wiring 31Q is longer than the length in the Y-axis direction of the second side light emitting element 40B.

[0154] First side light emitting element 40A is arranged in a portion of first wiring 31P closer to second wiring 32 (second substrate side surface 24). More specifically, the center of first side light emitting element 40A in the Y axis direction is located closer to second wiring 32 (second substrate side surface 24) than the center of first wiring 31P in the Y axis direction.

[0155] The first wiring 31P includes a first end face 31PA and a second end face 31PB that constitute both end faces of the first wiring 31P in the Y axis direction. The first end face 31PA is the end face closer to the first substrate side face 23 of both end faces of the first wiring 31P in the Y axis direction, and the second end face 31PB is the end face closer to the second substrate side face 24 of both end faces of the first wiring 31P in the Y axis direction. In the third embodiment, the first end face 31PA is located more inward (closer to the second substrate side face 24) than the first substrate side face 23. In a plan view, the first end face 31PA is located closer to the first substrate side face 23 than the center position in the Y axis direction between the first substrate side face 23 and the first element side face 43 (first light-emitting side face LS1) of the first side light emitting element 40A.

[0156] In a plan view, the length of the first wiring 31P in the Y-axis direction is longer than the length of the first side light emitting element 40A in the Y-axis direction. Therefore, the first wiring 31P includes a first extension portion 31PC that is a portion between the first light-emitting side surface LS1 and the first end surface 31PA of the first side light emitting element 40A, and a second extension portion 31PD that is a portion between the second light-emitting side surface LS2 and the second end surface 31PB. In this way, it can be said that the first wiring 31P has a first extension portion 31PC that is a portion extending from the first element side surface 43 (first light-emitting side surface LS1) of the first side light emitting element 40A toward the first sealed end surface 63. The first extension portion 31PC includes the first end surface 31PA. The second extension portion 31PD includes the second end surface 31PB.

[0157] A distance DP1 between the first element side surface 43 (first light-emitting side surface LS1) of the first side light emitting element 40A and the first end surface 31PA of the first wiring 31P in the Y-axis direction is greater than a distance DP2 between the second element side surface 44 (second light-emitting side surface LS2) of the first side light emitting element 40A and the second end surface 31PB of the first wiring 31P in the Y-axis direction. Here, the distance DP1 can also be said to be the length of the first extension portion 31PC in the Y-axis direction, and the distance DP2 can also be said to be the length of the second extension portion 31PD in the Y-axis direction.

[0158] The laser light emitted by the first side light emitting element 40A has higher directivity than that of a light emitting diode (LED). The laser light from the first side light emitting element 40A configured as a Fabry-Perot laser diode element as in the third embodiment is emitted in the +Y direction, which is approximately perpendicular to the thickness direction (Z-axis direction) of the substrate 20.

[0159] [Arrangement of Side Light Emitting Elements and Reflection of Laser Light from Side Light Emitting Elements] Fig. 21 shows a schematic cross-sectional structure of semiconductor light emitting device 10, which schematically illustrates the areas of light emitted from semiconductor light emitting device 10. In Fig. 21, the areas of light are indicated by dots.

[0160] As shown in FIG. 21 , the laser light from the first side light emitting element 40A is diffused (scattered) by the diffusing material 67. As a result, the laser light includes laser light directed toward the substrate surface 21. The first extension 31PC reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the first sealing end face 63 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10. In this way, it can be said that the semiconductor light emitting device 10 includes a first reflecting portion 80P that reflects at least a portion of the laser light emitted from the first light emitting side face LS1 of the first side light emitting element 40A. The first reflecting portion 80P can reflect at least a portion of the laser light directed toward the substrate surface 21, among the laser light emitted from the first light emitting side face LS1 of the first side light emitting element 40A. In the third embodiment, the first extension 31PC of the first wiring 31P constitutes the first reflecting portion 80P. In other words, it can be said that the first wiring 31P has a portion that extends from the first light-emitting side surface LS1 toward the first sealed end surface 63 as the first reflecting portion 80P.

[0161] 17, second side light emitting element 40B is arranged in a portion of first wiring 31Q closer to second wiring 32 (first substrate side surface 23). More specifically, the center of second side light emitting element 40B in the Y axis direction is located closer to second wiring 32 (first substrate side surface 23) than the center of first wiring 31Q in the Y axis direction.

[0162] The first wiring 31Q includes a first end face 31QA and a second end face 31QB that constitute both end faces of the first wiring 31Q in the Y axis direction. The first end face 31QA is the end face closer to the second substrate side face 24 of both end faces of the first wiring 31Q in the Y axis direction, and the second end face 31QB is the end face closer to the first substrate side face 23 of both end faces of the first wiring 31Q in the Y axis direction. In the third embodiment, the first end face 31QA is located more inward (closer to the first substrate side face 23) than the second substrate side face 24. In a plan view, the first end face 31QA is located closer to the second substrate side face 24 than the center position in the Y axis direction between the second substrate side face 24 and the second element side face 44 (fourth light-emitting side face LS4) of the second side light emitting element 40B.

[0163] In a plan view, the length of the first wiring 31Q in the Y-axis direction is longer than the length of the second side light emitting element 40B in the Y-axis direction. Therefore, the first wiring 31Q includes a first extension portion 31QC that is a portion between the fourth light-emitting side surface LS4 and the first end surface 31QA of the second side light emitting element 40B, and a second extension portion 31QD that is a portion between the third light-emitting side surface LS3 and the second end surface 31QB. In this way, it can be said that the first wiring 31Q has the first extension portion 31QC that is a portion that extends from the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B toward the second sealed end surface 64. The first extension portion 31QC includes the first end surface 31QA. The second extension portion 31QD includes the second end surface 31QB.

[0164] A distance DQ1 between the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B and the first end surface 31QA of the first wiring 31Q in the Y-axis direction is greater than a distance DQ2 between the first element side surface 43 (third light-emitting side surface LS3) of the second side light emitting element 40B and the second end surface 31QB of the first wiring 31Q in the Y-axis direction. Here, the distance DQ1 can also be said to be the length of the first extension portion 31QC in the Y-axis direction, and the distance DQ2 can also be said to be the length of the second extension portion 31QD in the Y-axis direction.

[0165] The laser light emitted by the second side light emitting element 40B has higher directivity than a light emitting diode (LED). The laser light from the second side light emitting element 40B configured as a Fabry-Perot laser diode element as in the third embodiment is emitted in the −Y direction, which is approximately perpendicular to the thickness direction (Z-axis direction) of the substrate 20.

[0166] As shown in FIG. 21 , the laser light from the second side light emitting element 40B is diffused (scattered) by the diffusing material 67. As a result, the laser light includes laser light directed toward the substrate surface 21. The first extension 31QC reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10. In this way, it can be said that the semiconductor light emitting device 10 includes a first reflecting portion 80Q that reflects at least a portion of the laser light emitted from the fourth light emitting side face LS4 of the second side light emitting element 40B. The first reflecting portion 80Q can reflect at least a portion of the laser light emitted from the fourth light emitting side face LS4 of the second side light emitting element 40B that is directed toward the substrate surface 21. In the third embodiment, the first extension 31QC of the first wiring 31Q constitutes the first reflecting portion 80Q. In other words, it can be said that the first wiring 31Q has a portion that extends from the fourth light-emitting side surface LS4 toward the second sealed end surface 64 as the first reflecting portion 80Q.

[0167] 17 can be arbitrarily changed. In one example, the first end face 31PA may be positioned flush with the first substrate side surface 23 in a plan view. The position of the first end face 31PA in the Y axis direction may be any position that allows the first extension portion 31PC to reflect at least a portion of the laser light directed toward the substrate surface 21. The first end face 31QA may be positioned flush with the second substrate side surface 24 in a plan view. The position of the first end face 31QA in the Y axis direction may be any position that allows the first extension portion 31QC to reflect at least a portion of the laser light directed toward the substrate surface 21.

[0168] [Effects] The semiconductor light-emitting device 10 of the third embodiment has the following effects. (3-1) The side light emitting element includes a first side light emitting element 40A having a first light-emitting side surface LS1 and a second light-emitting side surface LS2 as light-emitting side surfaces, and a second side light emitting element 40B provided separately from the first side light emitting element 40A and having a third light-emitting side surface LS3 and a fourth light-emitting side surface LS4 as light-emitting side surfaces. The first side light emitting element 40A and the second side light emitting element 40B are arranged side by side with the second light-emitting side surface LS2 and the third light-emitting side surface LS3 facing each other with a gap therebetween, when viewed in the thickness direction (Z-axis direction) of the substrate 20.

[0169] With this configuration, the first light-emitting side surface LS1 of the first side light emitting element 40A and the fourth light-emitting side surface LS4 of the second side light emitting element 40B face in different directions. That is, the light emitted from the first light-emitting side surface LS1 and the light emitted from the fourth light-emitting side surface LS4 face in different directions. This allows the semiconductor light emitting device 10 to emit light over a wider area.

[0170] Fourth Embodiment A semiconductor light-emitting device 10 according to a fourth embodiment will be described with reference to FIGS. 22 to 24. The semiconductor light-emitting device 10 according to the fourth embodiment differs from the semiconductor light-emitting device 10 according to the third embodiment mainly in the configuration of the first side light-emitting element 40A and the second side light-emitting element 40B for outputting laser light, and in the addition of a second reflector. Differences from the third embodiment will be described in detail below, and components common to the third embodiment will be denoted by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted from FIG. 22 to facilitate understanding of the drawing.

[0171] As shown in FIG. 22 , in the first side light emitting element 40A, the output of the first laser light emitted from the first light-emitting side surface LS1 in the +Y direction and the output of the second laser light emitted from the second light-emitting side surface LS2 in the −Y direction are both laser light having a predetermined output or more. That is, in the fourth embodiment, unlike the third embodiment, laser light with sufficient output is emitted from both the first light-emitting side surface LS1 and the second light-emitting side surface LS2. In the fourth embodiment, the first side light emitting element 40A is configured so that the output of the first laser light and the output of the second laser light are equal to each other. Note that the output of the first laser light and the output of the second laser light may differ from each other within a range equal to or greater than the predetermined output. In one example, the output of the first laser light may be greater than the output of the second laser light. In another example, the output of the first laser light may be smaller than the output of the second laser light.

[0172] In the second side light emitting element 40B, the output of the third laser light emitted from the third light emitting side surface LS3 in the +Y direction and the output of the fourth laser light emitted from the fourth light emitting side surface LS4 in the -Y direction are both laser light having a predetermined output or more. In other words, in the fourth embodiment, unlike the third embodiment, laser light with sufficient output is emitted from both the third light emitting side surface LS3 and the fourth light emitting side surface LS4. In the fourth embodiment, the second side light emitting element 40B is configured so that the output of the third laser light and the output of the fourth laser light are equal to each other. Note that the output of the third laser light and the output of the fourth laser light may differ from each other within a range equal to or greater than the predetermined output. In one example, the output of the third laser light may be greater than the output of the fourth laser light. In another example, the output of the third laser light may be smaller than the output of the fourth laser light.

[0173] 22 , the semiconductor light emitting device 10 further includes second reflectors 90P and 90Q. The second reflector 90P is configured to reflect at least a portion of the second laser light. The second reflector 90Q is configured to reflect at least a portion of the third laser light. The second reflector 90P can reflect at least a portion of the second laser light that is directed toward the substrate surface 21. The second reflector 90Q can reflect at least a portion of the third laser light that is directed toward the substrate surface 21. In the fourth embodiment, the second reflectors 90P and 90Q are configured as components dedicated to reflecting laser light.

[0174] When viewed from the X-axis direction, the second reflector 90P is provided between the top-surface light emitting element 50 and the second light-emitting side surface LS2 of the first side light emitting element 40A in the Y-axis direction. The second reflector 90P is arranged on the substrate surface 21 closer to the second wiring 32 (closer to the second sealing end surface 64) than the second element side surface 44 (second light-emitting side surface LS2) of the first side light emitting element 40A.

[0175] In the fourth embodiment, the second reflective portion 90P is disposed apart from both the first wiring 31P and the second wiring 32. The second reflective portion 90P is disposed between the first wiring 31P and the second wiring 32 in the Y-axis direction. The second reflective portion 90P is mounted on the substrate surface 21. More specifically, the second reflective portion 90P is bonded to the substrate surface 21 with an adhesive (not shown). Here, the second reflective portion 90P corresponds to the "first inner reflective portion."

[0176] When viewed from the X-axis direction, the second reflector 90Q is disposed between the top light emitting element 50 and the third light emitting side surface LS3 of the second side light emitting element 40B in the Y-axis direction. The second reflector 90Q is disposed on the substrate surface 21 closer to the second wiring 32 (closer to the first sealed end surface 63) than the first element side surface 43 (third light emitting side surface LS3) of the second side light emitting element 40B.

[0177] In the fourth embodiment, the second reflective portion 90Q is disposed apart from both the first wiring 31Q and the second wiring 32. The second reflective portion 90Q is disposed between the first wiring 31Q and the second wiring 32 in the Y-axis direction. The second reflective portion 90Q is mounted on the substrate surface 21. More specifically, the second reflective portion 90Q is bonded to the substrate surface 21 with an adhesive (not shown). Here, the second reflective portion 90Q corresponds to the "second inner reflective portion."

[0178] The second reflecting portions 90P and 90Q may be bonded to the substrate surface 21 by a conductive bonding material SD (see FIG. 23 ) instead of an adhesive. The second reflecting portion 90P may be mounted on the first wiring 31. The second reflecting portion 90Q may be mounted on the second wiring 32.

[0179] The positions of the second reflectors 90P and 90Q can be changed as desired. In one example, the second reflector 90P may be disposed on the first wiring 31P. In this case, the second extension portion 31PD of the first wiring 31P may extend in the Y-axis direction by the amount of space required for the second reflector 90P. In another example, the second reflector 90P may be disposed on the second wiring 32. In this case, the second wiring 32 may extend in the Y-axis direction by the amount of space required for the second reflector 90P. In another example, the second reflector 90Q may be disposed on the first wiring 31Q. In this case, the second extension portion 31QD of the first wiring 31Q may extend in the Y-axis direction by the amount of space required for the second reflector 90Q. In another example, the second reflector 90Q may be disposed on the second wiring 32. In this case, the second wiring 32 may extend in the Y-axis direction by the amount of space required for the second reflector 90Q.

[0180] The semiconductor light emitting device 10 includes a reflector 91 as the second reflecting portion 90P, 90Q. The reflector 91 is at least partially covered with the sealing resin 60. The reflector 91 is formed of, for example, a metal material. Examples of the metal material that can be used include Al, Cu, and alloys thereof.

[0181] The configuration of the reflector 91 can be changed as desired. For example, the reflector 91 may be a component made of a metal material with surface plating (reflective film) formed on the surface. Alternatively, the reflector 91 may be a component made of a resin material with surface plating (reflective film) formed on the surface.

[0182] In the fourth embodiment, the reflector 91 extends in the X-axis direction. The length of the reflector 91 in the X-axis direction is longer than, for example, the length of the first side light emitting element 40A (second side light emitting element 40B). The length of the reflector 91 in the X-axis direction is longer than, for example, the length of the first wiring 31 in the X-axis direction. In the fourth embodiment, both end faces of the reflector 91 in the X-axis direction are in contact with a pair of first side wall portions 71 of the side wall 70. Note that the length of the reflector 91 in the X-axis direction can be changed as desired. In one example, the length of the reflector 91 in the X-axis direction may be equal to the length of the first side light emitting element 40A (second side light emitting element 40B) in the X-axis direction.

[0183] As shown in Figure 23, the reflector 91 as the second reflecting portion 90P, 90Q has a bottom surface 92 facing the substrate surface 21, a side surface 93 extending upward from the bottom surface 92, and a reflecting surface 94 connecting the bottom surface 92 and the side surface 93.

[0184] The bottom surface 92 is a surface that contacts the adhesive and is formed as a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. The side surface 93 extends upward from one of both edges of the bottom surface 92 in the Y-axis direction that is closer to the second wiring 32. The reflective surface 94 connects the one of both edges of the bottom surface 92 in the Y-axis direction that is farther from the second wiring 32 to the upper edge of the side surface 93. The reflective surface 94 is an inclined surface that slopes upward toward the second wiring 32. In other words, the reflective surface 94 of the reflector 91 serving as the second reflector 90P is an inclined surface that slopes upward as it moves away from the second light-emitting side surface LS2 of the first side light emitting element 40A. The reflective surface 94 of the reflector 91 serving as the second reflector 90Q is an inclined surface that slopes upward as it moves away from the third light-emitting side surface LS3 of the second side light emitting element 40B.

[0185] The inclination angle of the reflecting surface 94 is set depending on the range of the laser light emitted from the sealing resin 60. In one example, the inclination angle of the reflecting surface 94 is greater than 0° and less than 45°. Here, the inclination angle of the reflecting surface 94 is the acute angle formed between the bottom surface 92 and the reflecting surface 94.

[0186] In the fourth embodiment, the height dimension (size in the Z-axis direction) of the side surface 93 is equal to the thickness dimension (size in the Z-axis direction) of the first side light emitting element 40A (second side light emitting element 40B). Therefore, when viewed from the Y-axis direction, the reflective surface 94 is formed to overlap the entire surface of the second light emitting side surface LS2 (third light emitting side surface LS3).

[0187] [Reflection of laser light from side light emitting element] Figure 24 shows a schematic cross-sectional structure of the semiconductor light emitting device 10, illustrating the region of light emitted from the semiconductor light emitting device 10. In Figure 24, the region of light is indicated by dots. Note that the dotted region of light indicates the outline of the range (angle) from which light is emitted, and does not indicate the range of light arrival.

[0188] 24 , the second laser light emitted from the second light-emitting side surface LS2 of the first side light emitting element 40A is diffused (scattered) by the diffusing material 67 of the sealing resin 60. As a result, part of the second laser light is directed toward the substrate surface 21. The second reflecting portion 90P reflects at least part of the second laser light directed toward the substrate surface 21 toward the +Z direction and the −Y direction (diagonally upward and to the right). As a result, the second laser light is emitted from the sealing surface 61 diagonally upward and to the right. In this case, the second laser light is emitted from the sealing surface 61 in a region closer to the second sealing end face 64 than the top-surface light emitting element 50. In other words, as shown in Figure 24, the second laser light is emitted toward the area between the light area where the fourth laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B is diffused (scattered) and emitted from the sealing surface 61 and the second sealing end surface 64, and the light area where the laser light emitted upward from the top light-emitting element 50 is diffused (scattered) and emitted from the sealing surface 61.

[0189] The third laser light emitted from the third light-emitting side surface LS3 of the second side light-emitting element 40B is diffused (scattered) by the diffusing material 67. As a result, a portion of the third laser light is directed toward the substrate surface 21. The second reflecting portion 90Q reflects at least a portion of the third laser light directed toward the substrate surface 21 toward the +Z direction and the +Y direction (diagonally upward and leftward). As a result, the third laser light is emitted diagonally upward and leftward from the sealing surface 61. In this case, the third laser light is emitted from the sealing surface 61 in a region closer to the first sealing end surface 63 than the top surface 50. That is, as shown in FIG. 24 , the third laser light is emitted toward a region between the light region where the first laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A is diffused (scattered) and emitted from the sealing surface 61 and the first sealing end surface 63, and the light region where the laser light emitted upward from the top light-emitting element 50 is diffused (scattered) and emitted from the sealing surface 61.

[0190] [Effects] The semiconductor light emitting device 10 of the fourth embodiment has the following effects: (4-1) The semiconductor light emitting device 10 further includes a second reflector 90P as a first inner reflector that is provided between the second light-emitting side surface LS2 of the first side light emitting element 40A and the top light emitting element 50 as viewed from the X axis direction and that reflects at least a portion of the light emitted from the second light-emitting side surface LS2, and a second reflector 90Q as a second inner reflector that is provided between the third light-emitting side surface LS3 of the second side light emitting element 40B and the top light emitting element 50 as viewed from the X axis direction and that reflects at least a portion of the light emitted from the third light-emitting side surface LS3.

[0191] According to this configuration, light emitted from the second light-emitting side surface LS2 is reflected by the second reflector 90P and directed toward a region between the region of light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B and the region of light emitted from the light-emitting upper surface 53 of the top-surface light-emitting element 50. Light emitted from the third light-emitting side surface LS3 is reflected by the second reflector 90Q and directed toward a region between the region of light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A and the region of light emitted from the light-emitting upper surface 53 of the top-surface light-emitting element 50. This increases the amount of light emitted toward a region above the substrate surface 21, allowing the semiconductor light-emitting device 10 to emit light more widely.

[0192] Fifth Embodiment A semiconductor light-emitting device 10 according to a fifth embodiment will be described with reference to FIGS. 25 to 27. The semiconductor light-emitting device 10 according to the fifth embodiment differs from the semiconductor light-emitting device 10 according to the fourth embodiment mainly in the arrangement of the second side light-emitting element 40B and the omission of the sidewall 70. Differences from the fourth embodiment will be described in detail below, and components common to the fourth embodiment will be denoted by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted from FIG. 25 to facilitate understanding of the drawing.

[0193] 25 , the sealing resin 60 is formed larger than in the first embodiment by the amount corresponding to the omission of the sidewall 70 from the semiconductor light emitting device 10. More specifically, in a plan view, the first to fourth sealing end faces 63 to 66 of the sealing resin 60 are disposed at the same positions as the corresponding first to fourth substrate side faces 23 to 26 of the substrate 20. It can also be said that the sealing resin 60 covers the entire substrate surface 21 of the substrate 20. In the fifth embodiment, the first sealing end face 63 is flush with the first substrate side face 23, the second sealing end face 64 is flush with the second substrate side face 24, the third sealing end face 65 is flush with the third substrate side face 25, and the fourth sealing end face 66 is flush with the fourth substrate side face 26.

[0194] In the fifth embodiment, the first side light emitting element 40A and the second side light emitting element 40B are arranged such that the direction in which the first light emitting side surface LS1 of the first side light emitting element 40A faces and the direction in which the third light emitting side surface LS3 of the second side light emitting element 40B faces intersect with each other in a plan view. In other words, the first side light emitting element 40A and the second side light emitting element 40B are arranged such that the arrangement direction of the first light emitting side surface LS1 and the second light emitting side surface LS2 and the arrangement direction of the third light emitting side surface LS3 and the fourth light emitting side surface LS4 intersect with each other in a plan view.

[0195] In the fifth embodiment, the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4 are arranged spaced apart from each other in the X-axis direction. That is, in the fifth embodiment, the X-axis direction is the arrangement direction of the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4. The first side light emitting element 40A is arranged such that the Y-axis direction is the arrangement direction of the first light-emitting side surface LS1 and the second light-emitting side surface LS2 in a plan view. Therefore, in the fifth embodiment, the second side light emitting element 40B is arranged such that the arrangement direction of the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4 is perpendicular to the arrangement direction of the first light-emitting side surface LS1 and the second light-emitting side surface LS2 of the first side light emitting element 40A in a plan view.

[0196] In the sealing resin 60 sealing the first side light emitting element 40A and the second side light emitting element 40B, the first sealing end surface 63 is disposed at a distance in the +Y direction from the first light-emitting side surface LS1 of the first side light emitting element 40A. The second sealing end surface 64 is disposed at a distance in the -Y direction from the second light-emitting side surface LS2 of the first side light emitting element 40A. The third sealing end surface 65 is disposed at a distance in the +X direction from the third light-emitting side surface LS3 of the second side light emitting element 40B. The fourth sealing end surface 66 is disposed at a distance in the -X direction from the fourth light-emitting side surface LS4 of the second side light emitting element 40B.

[0197] In the fifth embodiment, each of the first to fourth sealing end faces 63 to 66 is a diced surface. In this case, cutting marks due to the dicing process are formed on each of the first to fourth sealing end faces 63 to 66. In one example, each of the first to fourth sealing end faces 63 to 66 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first to fourth sealing end faces 63 to 66 may be greater than the arithmetic mean roughness (Ra) of the sealing surface 61.

[0198] Due to the change in the orientation of the second side light emitting element 40B, the orientation of the first wiring 31Q differs from that of the first wiring 31Q of the fourth embodiment. More specifically, the first wiring 31Q is arranged so that its first end face 31QA and second end face 31QB are spaced apart from each other in the X-axis direction. The first wiring 31Q has a rectangular shape with its longitudinal direction in the X-axis direction and its lateral direction in the Y-axis direction. The length of the first wiring 31Q in the X-axis direction is longer than the length of the second side light emitting element 40B in the X-axis direction. Note that the length of the first wiring 31Q in the X-axis direction may be longer than the length of the first wiring 31P in the Y-axis direction.

[0199] The second side light emitting element 40B is disposed at the center of the first wiring 31Q in the X-axis direction. That is, a distance DQ2, which is the distance in the X-axis direction between the first element side surface 43 (third light-emitting side surface LS3) of the second side light emitting element 40B and the first end surface 31QA of the first wiring 31Q, is equal to a distance DQ1, which is the distance in the X-axis direction between the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B and the second end surface 31QB of the first wiring 31Q. Here, if the difference between the distances DQ1 and DQ2 is, for example, within 10% of the distance DQ1, then the distances DQ1 and DQ2 can be said to be equal to each other.

[0200] In this way, the first wiring 31Q can be said to have a first extending portion 31QC that is a portion that extends from the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B toward the fourth sealed edge surface 66. The first extending portion 31QC includes the first edge surface 31QA. The first wiring 31Q can also be said to have a second extending portion 31QD that is a portion that extends from the first element side surface 43 (third light-emitting side surface LS3) of the second side light emitting element 40B toward the third sealed edge surface 65. The second extending portion 31QD includes the second edge surface 31QB. In the fifth embodiment, the first extending portion 31QC constitutes the first reflecting portion 80Q, and the second extending portion 31QD constitutes the second reflecting portion 90Q.

[0201] The reflector 91 disposed between the second wiring 32 and the first wiring 31Q in the Y-axis direction may be omitted. In this case, the first wiring 31Q may be brought closer to the second wiring 32 by the dimension of the reflector 91 in the Y-axis direction. This allows the semiconductor light-emitting device 10 to be made smaller.

[0202] 26 and 27 show a schematic cross-sectional structure of the semiconductor light-emitting device 10, which schematically shows the region of light emitted from the semiconductor light-emitting device 10. In Fig. 26 and Fig. 27, the region of light is indicated by dots.

[0203] 27 , the second side light emitting element 40B is arranged so that the third light emitting side surface LS3 faces the third substrate side surface 25 (third sealing end surface 65) and the fourth light emitting side surface LS4 faces the fourth substrate side surface 26 (fourth sealing end surface 66). Therefore, the third laser light is emitted from the third light emitting side surface LS3 in the +X direction, and the fourth laser light is emitted from the fourth light emitting side surface LS4 in the −X direction.

[0204] The fourth laser light emitted from the fourth light-emitting side surface LS4 is diffused (scattered) by the diffusing material 67. As a result, part of the fourth laser light is directed toward the substrate surface 21 (see FIG. 25 ). At least part of the fourth laser light directed toward the substrate surface 21 is reflected by the first extending portion 31QC serving as the first reflecting portion 80Q. The reflected laser light is emitted from the fourth sealing end surface 66.

[0205] The third laser light emitted from the third light-emitting side surface LS3 is diffused (scattered) by the diffusing material 67. As a result, part of the third laser light is directed toward the substrate surface 21. At least part of the third laser light directed toward the substrate surface 21 is reflected by the second extending portion 31QD serving as the second reflecting portion 90Q. The reflected laser light is emitted from the third sealing end surface 65.

[0206] 26 , the emission patterns of the first laser light emitted from the first light-emitting side surface LS1 and the second laser light emitted from the second light-emitting side surface LS2 of the first side light-emitting element 40A are the same as those in the fourth embodiment. Furthermore, the emission pattern of the laser light emitted from the top light-emitting element 50 is the same as that in the fourth embodiment (third embodiment). Therefore, at least a portion of the second laser light emitted from the second light-emitting side surface LS2 is reflected by the reflector 91 of the second reflecting portion 90P. The second laser light reflected by the second reflecting portion 90P is emitted upward as it travels toward the second sealing end surface 64. Here, in the fifth embodiment, the second reflecting portion 90P corresponds to the "reflecting portion."

[0207] [Effects] The semiconductor light-emitting device 10 of the fifth embodiment has the following effects. (5-1) The first side light-emitting element 40A is arranged to emit light from the first light-emitting side surface LS1 in a first direction (+Y direction) intersecting the thickness direction (Z-axis direction) of the substrate 20. The top light-emitting element 50 is arranged between the first side light-emitting element 40A and the second side light-emitting element 40B when viewed from the X-axis direction. The first side light-emitting element 40A and the second side light-emitting element 40B are arranged so that the direction in which the first light-emitting side surface LS1 faces intersects the direction in which the third light-emitting side surface LS3 faces when viewed from the thickness direction (Z direction) of the substrate 20. The first side light-emitting element 40A is configured to emit light from the second light-emitting side surface LS2 in the direction opposite to the first direction. The second side light-emitting element 40B is configured to emit light from the third light-emitting side surface LS3 facing in the direction opposite to the direction in which the fourth light-emitting side surface LS4 faces.

[0208] According to this configuration, light is emitted from four different directions by the first side light emitting element 40A and the second side light emitting element 40B, thereby enabling the semiconductor light emitting device 10 to emit light more widely.

[0209] (5-2) The top-surface light-emitting element 50 is disposed to face the second light-emitting side surface LS2 of the first side-surface light-emitting element 40 A. The semiconductor light-emitting device 10 further includes a second reflector 90P that is provided between the second light-emitting side surface LS2 and the top-surface light-emitting element 50 when viewed from the X-axis direction and serves as a reflector that reflects at least a portion of the light emitted from the second light-emitting side surface LS2.

[0210] According to this configuration, the light emitted from the second light-emitting side surface LS2 is reflected by the second reflecting portion 90P and emitted to the outside of the semiconductor light-emitting device 10 in a direction different from that of the light emitted from the upper light-emitting surface 53 of the top-surface light-emitting element 50. This makes it possible to increase the amount of light emitted toward a region above the substrate surface 21.

[0211] (5-3) The semiconductor light emitting device 10 includes a first reflecting portion 80Q that reflects at least a portion of the light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and a second reflecting portion 90Q that reflects at least a portion of the light emitted from the third light emitting side surface LS3.

[0212] According to this configuration, light emitted from the fourth light-emitting side surface LS4 is reflected by the first reflector 80Q and is emitted from the fourth sealing end surface 66 above the first reflector 80Q. Light emitted from the third light-emitting side surface LS3 is reflected by the second reflector 90Q and is emitted from the third sealing end surface 65 above the second reflector 90Q. This increases the amount of light emitted toward a region above the first reflector 80Q and the second reflector 90Q.

[0213] In addition, since light is prevented from being emitted from the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4 toward a region below the substrate surface 21, for example, when the semiconductor light-emitting device 10 is mounted on a circuit board, light can be prevented from being emitted from both the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4 toward the surface of the circuit board.

[0214] (5-4) The first wiring 31Q has a first extension portion 31QC, which is a portion that extends from the fourth light-emitting side surface LS4 in the direction in which the fourth light-emitting side surface LS4 faces, as the first reflective portion 80Q, and a second extension portion 31QD, which is a portion that extends from the third light-emitting side surface LS3 in the direction in which the third light-emitting side surface LS3 faces, as the second reflective portion 90Q.

[0215] According to this configuration, the first reflector 80Q and the second reflector 90Q can be constructed without adding components dedicated to the first reflector 80Q and the second reflector 90Q, thereby suppressing an increase in the number of components in the semiconductor light-emitting device 10.

[0216] Sixth Embodiment A semiconductor light-emitting device 10 according to a sixth embodiment will be described with reference to FIGS. 28 to 34. The semiconductor light-emitting device 10 according to the sixth embodiment differs from the semiconductor light-emitting device 10 according to the third embodiment mainly in the number and arrangement of side light-emitting elements and in the omission of the sidewall 70. Differences from the third embodiment will be described in detail below, and components common to the third embodiment will be denoted by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted in FIGS. 28, 31, and 32 to facilitate understanding of the drawings.

[0217] As shown in FIG. 28 , the semiconductor light-emitting device 10 of the sixth embodiment is provided with a plurality of side light emitting elements (four in the sixth embodiment). The plurality of side light emitting elements are arranged around the top light emitting element 50 so that their light-emitting side surfaces face in different directions. In the sixth embodiment, the plurality of side light emitting elements include a first side light emitting element 40A, a second side light emitting element 40B, a third side light emitting element 40C, and a fourth side light emitting element 40D. In the sixth embodiment, the first to fourth side light emitting elements 40A to 40D have the same configuration as each other. The first to fourth side light emitting elements 40A to 40D have the same configuration as the side light emitting element 40 of the first embodiment (see FIG. 2 ). For this reason, the same reference numerals are used to designate components of the first to fourth side light emitting elements 40A to 40D that are common to the side light emitting element 40, and their description will be omitted.

[0218] The first to fourth side light emitting elements 40A to 40D are arranged around the top light emitting element 50 in a plan view. More specifically, the first to fourth side light emitting elements 40A to 40D are arranged at 90° intervals around the top light emitting element 50 in a plan view. The first side light emitting element 40A is arranged closer to the first substrate side surface 23 (first sealing end surface 63) than the top light emitting element 50. The second side light emitting element 40B is arranged closer to the second substrate side surface 24 (second sealing end surface 64) than the top light emitting element 50. The third side light emitting element 40C is arranged closer to the third substrate side surface 25 (third sealing end surface 65) than the top light emitting element 50. The fourth side light emitting element 40D is arranged closer to the fourth substrate side surface 26 (fourth sealing end surface 66) than the top light emitting element 50.

[0219] The first side light emitting element 40A has a first light emitting side surface LS1 and a second light emitting side surface LS2. The first light emitting side surface LS1 is formed on the first element side surface 43 of the first side light emitting element 40A, and the second light emitting side surface LS2 is formed on the second element side surface 44 of the first side light emitting element 40A. The first side light emitting element 40A is arranged so that the first light emitting side surface LS1 faces the first substrate side surface 23 (first sealed end surface 63). In other words, the first side light emitting element 40A is arranged to emit laser light from the first light emitting side surface LS1 in the +Y direction (first direction). As a result, the second light emitting side surface LS2 faces the second substrate side surface 24 (second sealed end surface 64). In other words, the second light emitting side surface LS2 faces the -Y direction (second direction). In other words, the first side light emitting element 40A is arranged so that it emits laser light from the second light emitting side surface LS2 in the -Y direction (second direction).

[0220] The output of the laser light emitted from the first light-emitting side surface LS1 and the output of the laser light emitted from the second light-emitting side surface LS2 are different from each other. In the sixth embodiment, the ratio of the output of the laser light emitted from the first light-emitting side surface LS1 to the output of the laser light emitted from the second light-emitting side surface LS2 is, for example, 9:1. The configuration for adjusting the output of the laser light is the same as in the first embodiment.

[0221] The second side light emitting element 40B has a third light emitting side surface LS3 and a fourth light emitting side surface LS4. The third light emitting side surface LS3 is formed on the first element side surface 43 of the second side light emitting element 40B, and the fourth light emitting side surface LS4 is formed on the second element side surface 44 of the second side light emitting element 40B. The second side light emitting element 40B is arranged so that the fourth light emitting side surface LS4 faces the second substrate side surface 24 (second sealing end surface 64). In other words, the second side light emitting element 40B is arranged to emit laser light from the fourth light emitting side surface LS4 in the -Y direction (second direction). As a result, the third light emitting side surface LS3 faces the first substrate side surface 23 (first sealing end surface 63). In other words, the third light emitting side surface LS3 faces the +Y direction (first direction). In other words, the second side light emitting element 40B is arranged so that it emits laser light from the third light emitting side surface LS3 in the +Y direction (first direction).

[0222] The output of the laser light emitted from the fourth light-emitting side surface LS4 and the output of the laser light emitted from the third light-emitting side surface LS3 are different from each other. In the sixth embodiment, the ratio of the output of the laser light emitted from the fourth light-emitting side surface LS4 to the output of the laser light emitted from the third light-emitting side surface LS3 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4. In the sixth embodiment, the reflectance of the reflective film formed on the fourth light-emitting side surface LS4 is set to be lower than the reflectance of the reflective film formed on the third light-emitting side surface LS3.

[0223] The third side light emitting element 40C has a fifth light emitting side surface LS5 and a sixth light emitting side surface LS6. The fifth light emitting side surface LS5 is formed on the first element side surface 43 of the third side light emitting element 40C, and the sixth light emitting side surface LS6 is formed on the second element side surface 44 of the third side light emitting element 40C. The third side light emitting element 40C is arranged so that the fifth light emitting side surface LS5 faces the third substrate side surface 25 (third sealing end surface 65). In other words, the third side light emitting element 40C is arranged so that laser light is emitted from the fifth light emitting side surface LS5 in a third direction (+X direction) that is different from both the first direction (+Y direction) and the second direction (-Y direction). As a result, the sixth light emitting side surface LS6 faces the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the sixth light emitting side surface LS6 is arranged so that it faces the -X direction. Here, the −X direction corresponds to a fourth direction different from the first, second, and third directions in plan view. That is, third side light emitting element 40C is disposed so that laser light is emitted from sixth light-emitting side surface LS6 in the −X direction (fourth direction).

[0224] The output of the laser light emitted from the fifth light-emitting side surface LS5 and the output of the laser light emitted from the sixth light-emitting side surface LS6 are different from each other. In the sixth embodiment, the ratio of the output of the laser light emitted from the fifth light-emitting side surface LS5 to the output of the laser light emitted from the sixth light-emitting side surface LS6 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the fifth light-emitting side surface LS5 and the sixth light-emitting side surface LS6. In the sixth embodiment, the reflectance of the reflective film formed on the fifth light-emitting side surface LS5 is set to be lower than the reflectance of the reflective film formed on the sixth light-emitting side surface LS6.

[0225] The fourth side light emitting element 40D has a seventh light emitting side surface LS7 and an eighth light emitting side surface LS8. The seventh light emitting side surface LS7 is formed on the first element side surface 43 of the fourth side light emitting element 40D, and the eighth light emitting side surface LS8 is formed on the second element side surface 44 of the fourth side light emitting element 40D. The fourth side light emitting element 40D is arranged so that the eighth light emitting side surface LS8 faces the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the fourth side light emitting element 40D is arranged to emit laser light from the eighth light emitting side surface LS8 in the fourth direction (-X direction). As a result, the seventh light emitting side surface LS7 faces the third substrate side surface 25 (third sealing end surface 65). In other words, the seventh light emitting side surface LS7 faces the third direction (+X direction). In other words, the fourth side light emitting element 40D is arranged so that it emits laser light from the seventh light emitting side surface LS7 in the third direction (+X direction).

[0226] The output of the laser light emitted from the eighth light-emitting side surface LS8 and the output of the laser light emitted from the seventh light-emitting side surface LS7 are different from each other. In the sixth embodiment, the ratio of the output of the laser light emitted from the eighth light-emitting side surface LS8 to the output of the laser light emitted from the seventh light-emitting side surface LS7 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the seventh light-emitting side surface LS7 and the eighth light-emitting side surface LS8. In the sixth embodiment, the reflectance of the reflective film formed on the seventh light-emitting side surface LS7 is set to be lower than the reflectance of the reflective film formed on the eighth light-emitting side surface LS8.

[0227] In the sixth embodiment, the output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the output of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D are all equal to each other.

[0228] The output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the output of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D can be individually changed as desired. In one example, the output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the output of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D may be different from one another. In another example, one to three of the output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the output of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D may be different from the remaining ones.

[0229] In the sixth embodiment, the wavelength of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D are all equal to each other.

[0230] The wavelengths of the laser light emitted from the first light-emitting side surface LS1 of the first side light emitting element 40A, the fourth light-emitting side surface LS4 of the second side light emitting element 40B, the fifth light-emitting side surface LS5 of the third side light emitting element 40C, and the eighth light-emitting side surface LS8 of the fourth side light emitting element 40D can be individually changed as desired. In one example, the wavelengths of the laser light emitted from the first light-emitting side surface LS1 of the first side light emitting element 40A, the fourth light-emitting side surface LS4 of the second side light emitting element 40B, the fifth light-emitting side surface LS5 of the third side light emitting element 40C, and the eighth light-emitting side surface LS8 of the fourth side light emitting element 40D may be different from one another. In another example, one to three of the wavelengths of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, and the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D may be different from the remaining wavelengths.

[0231] 29, the semiconductor light emitting device 10 includes first wirings 101, 102, 103, and 104 instead of the first wirings 31P and 31Q (see FIG. 17) of the third embodiment, and third wirings 111 and 112 instead of the third wiring 33 (see FIG. 17) of the third embodiment. In the sixth embodiment, the first wirings 101 to 104 and the third wirings 111 and 112 are each formed on the substrate surface 21.

[0232] The first wirings 101 to 104 have the same shape and size as one another. The first wirings 101 to 104 have the same shape and size as the first wirings 31P and 31Q of the third embodiment. The first wirings 101 to 104 are formed of a material containing Cu, similar to the first wirings 31P and 31Q.

[0233] The first wirings 101 to 104 are arranged around the second wiring 32. In the sixth embodiment, the first wirings 101 to 104 are arranged around the second wiring 32 at intervals of 90°.

[0234] The first wiring 101 is arranged closer to the first substrate side surface 23 than the second wiring 32. When viewed from the Y-axis direction, the first wiring 101 is arranged at a position overlapping the second wiring 32. In plan view, the first wiring 101 is arranged so that the Y-axis direction is the longitudinal direction and the X-axis direction is the lateral direction. Note that the shape of the first wiring 101 in plan view can be changed as desired.

[0235] The first wiring 102 is arranged closer to the second substrate side surface 24 than the second wiring 32. The first wiring 102 is arranged at a position overlapping the second wiring 32 when viewed from the Y-axis direction. Therefore, the first wiring 102 is arranged opposite the first wiring 101 with the second wiring 32 interposed therebetween in a planar view. In a planar view, the first wiring 101, the second wiring 32, and the first wiring 102 are arranged in a line in the Y-axis direction. In a planar view, the first wiring 102 is arranged so that the Y-axis direction is the longitudinal direction and the X-axis direction is the lateral direction. The shape of the first wiring 102 in a planar view can be changed as desired.

[0236] The first wiring 103 is arranged closer to the third substrate side surface 25 than the second wiring 32. When viewed from the X-axis direction, the first wiring 103 is arranged at a position overlapping the second wiring 32. In plan view, the first wiring 103 is arranged so that the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. Note that the shape of the first wiring 103 in plan view can be changed as desired.

[0237] The first wiring 104 is arranged closer to the fourth substrate side surface 26 than the second wiring 32. The first wiring 104 is arranged at a position overlapping the second wiring 32 when viewed from the X-axis direction. Therefore, the first wiring 104 is arranged opposite the first wiring 103 with the second wiring 32 interposed therebetween in a plan view. In a plan view, the first wiring 103, the second wiring 32, and the first wiring 104 are arranged in a line in the X-axis direction. In a plan view, the first wiring 104 is arranged so that the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. The shape of the first wiring 104 in a plan view can be changed as desired.

[0238] The third wirings 111 and 112 have the same shape and size. The third wirings 111 and 112 have the same shape and size as the third wiring 33 of the third embodiment (see FIG. 17 ). The third wirings 111 and 112 are distributed and disposed on both sides of the second wiring 32 in the Y-axis direction. The shape and size of the third wirings 111 and 112 can be changed as desired. In one example, the shape of the third wiring 111 and the shape of the third wiring 112 may be different from each other.

[0239] The third wiring 111 is arranged closer to the first substrate side surface 23 than the second wiring 32. In the sixth embodiment, the third wiring 111 is arranged between the second wiring 32 and the first wiring 101 in the X-axis direction.

[0240] The third wiring 112 is arranged closer to the second substrate side surface 24 than the second wiring 32. In the sixth embodiment, the third wiring 112 is arranged between the second wiring 32 and the first wiring 102 in the X-axis direction. In this way, in a plan view, the first wiring 101, the third wiring 111, the second wiring 32, the third wiring 112, and the first wiring 102 are arranged in a line in the X-axis direction.

[0241] 30 , the semiconductor light emitting device 10 includes first electrodes 121, 122, 123, and 124 instead of the first electrodes 34P and 34Q of the third embodiment, and third electrodes 131 and 132 instead of the third electrode 36 of the third embodiment. Each of the first electrodes 121 to 124 and the third electrodes 131 and 132 is formed on the rear surface 22 of the substrate. Each of the first electrodes 121 to 124 and the third electrodes 131 and 132 is formed of a material containing, for example, Cu.

[0242] The first electrodes 121 to 124 are arranged around the second electrode 35. In the sixth embodiment, the first electrodes 121 to 124 are arranged around the second electrode 35 at intervals of 90°.

[0243] The first electrode 121 is disposed closer to the first substrate side surface 23 than the second electrode 35. In a plan view, the first electrode 121 is disposed at a position overlapping the first wiring 101 (see FIG. 29).

[0244] The first electrode 122 is disposed closer to the second substrate side surface 24 than the second electrode 35. In a plan view, the first electrode 122 is disposed at a position overlapping the first wiring 102 (see FIG. 29).

[0245] The first electrode 123 is disposed closer to the third substrate side surface 25 than the second electrode 35. In a plan view, the first electrode 123 is disposed at a position overlapping the first wiring 103 (see FIG. 29).

[0246] The first electrode 124 is disposed closer to the fourth substrate side surface 26 than the second electrode 35. In a plan view, the first electrode 124 is disposed at a position overlapping the first wiring 104 (see FIG. 29).

[0247] The third electrode 131 is disposed closer to the first substrate side surface 23 than the second electrode 35. In the sixth embodiment, the third electrode 131 is disposed between the second electrode 35 and the first electrode 121 in the X-axis direction. In a plan view, the third electrode 131 is disposed at a position overlapping with the third wiring 111 (see FIG. 29 ).

[0248] The third electrode 132 is disposed closer to the second substrate side surface 24 than the second electrode 35. In the sixth embodiment, the third electrode 132 is disposed between the second electrode 35 and the first electrode 122 in the X-axis direction. In a plan view, the third electrode 132 is disposed at a position overlapping with the third wiring 112 (see FIG. 29 ).

[0249] 29 and 30 , the semiconductor light emitting device 10 includes first vias 141, 142, 143, and 144 instead of the first vias 37P and 37Q (see FIG. 18 ) of the third embodiment, and third vias 151 and 152 instead of the third via 39 of the third embodiment. Each of the first vias 141 to 144 and the third vias 151 and 152 penetrates the substrate 20 in its thickness direction (Z-axis direction). Each of the first vias 141 to 144 and the third vias 151 and 152 is formed of a material containing, for example, Cu.

[0250] The first via 141 electrically connects the first wiring 101 and the first electrode 121. A plurality of first vias 141 are provided. The plurality of first vias 141 are arranged at positions overlapping both the first wiring 101 and the first electrode 121 in a plan view. In the sixth embodiment, the plurality of first vias 141 are arranged so that the number of the first vias 141 in the longitudinal direction (Y-axis direction) of the first wiring 101 (first electrode 121) is greater than the number of the first vias 141 in the lateral direction (X-axis direction) of the first wiring 101 (first electrode 121).

[0251] The first via 142 electrically connects the first wiring 102 and the first electrode 122. A plurality of first vias 142 are provided. The plurality of first vias 142 are arranged at positions overlapping both the first wiring 102 and the first electrode 122 in a plan view. In the sixth embodiment, the arrangement of the first vias 142 is the same as the arrangement of the first vias 141.

[0252] The first via 143 electrically connects the first wiring 103 and the first electrode 123. A plurality of first vias 143 are provided. The plurality of first vias 143 are arranged at positions overlapping both the first wiring 103 and the first electrode 123 in a plan view. In the sixth embodiment, the plurality of first vias 143 are arranged so that the number of the first vias 143 in the longitudinal direction (X-axis direction) of the first wiring 103 (first electrode 123) is greater than the number of the first vias 143 in the lateral direction (Y-axis direction) of the first wiring 103 (first electrode 123).

[0253] The first via 144 electrically connects the first wiring 104 and the first electrode 124. A plurality of first vias 144 are provided. The plurality of first vias 144 are arranged at positions overlapping both the first wiring 104 and the first electrode 124 in a plan view. In the sixth embodiment, the arrangement of the first vias 144 is the same as the arrangement of the first vias 143.

[0254] The number and arrangement of each of the first vias 141 to 144 can be changed arbitrarily. In one example, the multiple first vias 141 may be arranged so that the number in the short direction of the first wiring 103 (first electrode 123) is equal to or greater than the number in the long direction of the first wiring 103 (first electrode 123). The multiple first vias 142, the multiple first vias 143, and the multiple first vias 144 can also be changed in a similar manner. Also, each of the first vias 141 to 144 may be one.

[0255] The third via 151 electrically connects the third wiring 111 and the third electrode 131. The third via 151 is disposed at a position overlapping the third wiring 111 and the third electrode 131 in a plan view.

[0256] The third via 152 electrically connects the third wiring 112 and the third electrode 132. The third via 152 is disposed at a position overlapping the third wiring 112 and the third electrode 132 in a plan view. The number of third vias 151, 152 can be changed as desired. A plurality of third vias 151, 152 may be provided.

[0257] As shown in Fig. 31 , the first side light emitting element 40A is mounted on the first wiring 101. More specifically, the first side light emitting element 40A is joined to the first wiring 101 with a conductive bonding material (not shown). In other words, the first side light emitting element 40A is mounted on the first wiring 101. As a result, as shown in Fig. 33 , the cathode electrode 48 of the first side light emitting element 40A is electrically connected to the first wiring 101. As shown in Fig. 31 , the anode electrode 47 of the first side light emitting element 40A is electrically connected to the third wiring 111 by the wire W1a.

[0258] First side light emitting element 40A is arranged closer to second wiring 32 of first wiring 101. More specifically, the center of first side light emitting element 40A in the Y-axis direction is located closer to second wiring 32 (second substrate side surface 24) than the center of first wiring 101 in the Y-axis direction.

[0259] The first wiring 101 includes a first end face 101A and a second end face 101B that constitute both end faces of the first wiring 101 in the Y-axis direction. The first end face 101A is the end face closer to the first substrate side face 23 of both end faces of the first wiring 101 in the Y-axis direction, and the second end face 101B is the end face closer to the second substrate side face 24 of both end faces of the first wiring 101 in the Y-axis direction. In the sixth embodiment, the first end face 101A is disposed more inward than the first substrate side face 23 (closer to the second substrate side face 24). In a plan view, the first end face 101A is disposed closer to the first substrate side face 23 than the center position in the Y-axis direction between the first substrate side face 23 and the first element side face 43 (first light-emitting side face LS1) of the first side light emitting element 40A.

[0260] The distance D1a in the Y-axis direction between the first element side surface 43 (first light-emitting side surface LS1) of the first side light emitting element 40A and the first end surface 101A of the first wiring 101 is greater than the distance D2a in the Y-axis direction between the second element side surface 44 (second light-emitting side surface LS2) of the first side light emitting element 40A and the second end surface 101B of the first wiring 101. In this way, it can be said that the first wiring 101 has a first extension portion 101C that is a portion that extends from the first element side surface 43 (first light-emitting side surface LS1) of the first side light emitting element 40A toward the first sealed end surface 63. The first extension portion 101C includes the first end surface 101A.

[0261] The second side light emitting element 40B is mounted on the first wiring 102. More specifically, the second side light emitting element 40B is joined to the first wiring 102 with a conductive bonding material (not shown). In other words, the second side light emitting element 40B is mounted on the first wiring 102. As a result, as shown in FIG. 33 , the cathode electrode 48 of the second side light emitting element 40B is electrically connected to the first wiring 102. As shown in FIG. 31 , the anode electrode 47 of the second side light emitting element 40B is electrically connected to the third wiring 112 by the wire W1b.

[0262] The second side light emitting element 40B is arranged closer to the second wiring 32 of the first wiring 102. More specifically, the center of the second side light emitting element 40B in the Y-axis direction is located closer to the second wiring 32 (first substrate side surface 23) than the center of the first wiring 102 in the Y-axis direction.

[0263] The first wiring 102 includes a first end face 102A and a second end face 102B that constitute both end faces of the first wiring 102 in the Y axis direction. The first end face 102A is the end face closer to the second substrate side face 24 of both end faces of the first wiring 102 in the Y axis direction, and the second end face 102B is the end face closer to the first substrate side face 23 of both end faces of the first wiring 102 in the Y axis direction. In the sixth embodiment, the first end face 102A is disposed more inward (closer to the first substrate side face 23) than the second substrate side face 24. In a plan view, the first end face 102A is disposed closer to the second substrate side face 24 than the center position in the Y axis direction between the second substrate side face 24 and the second element side face 44 (fourth light-emitting side face LS4) of the second side light emitting element 40B.

[0264] The distance D1b in the Y-axis direction between the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B and the first end surface 102A of the first wiring 102 is greater than the distance D2b in the Y-axis direction between the first element side surface 43 (third light-emitting side surface LS3) of the second side light emitting element 40B and the second end surface 102B of the first wiring 102. In this way, it can be said that the first wiring 102 has a first extension portion 102C that is a portion that extends from the second element side surface 44 (fourth light-emitting side surface LS4) of the second side light emitting element 40B toward the second sealed end surface 64. The first extension portion 102C includes the first end surface 102A.

[0265] The third side light emitting element 40C is mounted on the first wiring 103. More specifically, the third side light emitting element 40C is joined to the first wiring 103 with a conductive bonding material (not shown). In other words, the third side light emitting element 40C is mounted on the first wiring 103. As a result, as shown in FIG. 34, the cathode electrode 48 of the third side light emitting element 40C is electrically connected to the first wiring 103. As shown in FIG. 31, the anode electrode 47 of the third side light emitting element 40C is electrically connected to the third wiring 111 by the wire W1c.

[0266] Third side light emitting element 40C is arranged closer to second wiring 32 of first wiring 103. More specifically, the center of third side light emitting element 40C in the X-axis direction is located closer to second wiring 32 (fourth substrate side surface 26) than the center of first wiring 103 in the X-axis direction.

[0267] The first wiring 103 includes a first end face 103A and a second end face 103B that constitute both end faces of the first wiring 103 in the X-axis direction. The first end face 103A is the end face closer to the third substrate side face 25 of both end faces of the first wiring 103 in the X-axis direction, and the second end face 103B is the end face closer to the fourth substrate side face 26 of both end faces of the first wiring 103 in the X-axis direction. In the sixth embodiment, the first end face 103A is disposed more inward (closer to the second wiring 32) than the third substrate side face 25. In a plan view, the first end face 103A is disposed closer to the third substrate side face 25 than the center in the X-axis direction between the third substrate side face 25 and the first element side face 43 (fifth light-emitting side face LS5) of the third side light emitting element 40C.

[0268] The distance D1c in the X-axis direction between the first element side surface 43 (fifth light-emitting side surface LS5) of the third side light emitting element 40C and the first end surface 103A of the first wiring 103 is greater than the distance D2c in the X-axis direction between the second element side surface 44 (sixth light-emitting side surface LS6) of the third side light emitting element 40C and the second end surface 103B of the first wiring 103. In this way, it can be said that the first wiring 103 has a first extension portion 103C that is a portion that extends from the first element side surface 43 (fifth light-emitting side surface LS5) of the third side light emitting element 40C toward the third sealed end surface 65. The first extension portion 103C includes the first end surface 103A.

[0269] As shown in Fig. 32 , the fourth side light emitting element 40D is mounted on the first wiring 104. More specifically, the fourth side light emitting element 40D is joined to the first wiring 104 with a conductive bonding material (not shown). In other words, the fourth side light emitting element 40D is mounted on the first wiring 104. As a result, as shown in Fig. 34 , the cathode electrode 48 of the fourth side light emitting element 40D is electrically connected to the first wiring 104. As shown in Fig. 32 , the anode electrode 47 of the fourth side light emitting element 40D is electrically connected to the third wiring 112 by the wire W1d.

[0270] Fourth side light emitting element 40D is arranged closer to second wiring 32 of first wiring 104. More specifically, the center of fourth side light emitting element 40D in the X-axis direction is located closer to second wiring 32 (third substrate side surface 25) than the center of first wiring 104 in the X-axis direction.

[0271] The first wiring 104 includes a first end face 104A and a second end face 104B that constitute both end faces of the first wiring 104 in the X-axis direction. The first end face 104A is the end face closer to the fourth substrate side face 26 of both end faces of the first wiring 104 in the X-axis direction, and the second end face 104B is the end face closer to the third substrate side face 25 of both end faces of the first wiring 104 in the X-axis direction. In the sixth embodiment, the first end face 104A is located more inward (closer to the second wiring 32) than the fourth substrate side face 26. In a plan view, the first end face 104A is located closer to the fourth substrate side face 26 than the center position in the X-axis direction between the fourth substrate side face 26 and the second element side face 44 (eighth light-emitting side face LS8) of the fourth side light emitting element 40D.

[0272] The distance D1d in the X-axis direction between the second element side surface 44 (eighth light-emitting side surface LS8) of the fourth side light emitting element 40D and the first end surface 104A of the first wiring 104 is greater than the distance D2d in the X-axis direction between the first element side surface 43 (seventh light-emitting side surface LS7) of the fourth side light emitting element 40D and the second end surface 104B of the first wiring 104. In this way, it can be said that the first wiring 104 has a first extension portion 104C that is a portion that extends from the second element side surface 44 (eighth light-emitting side surface LS8) of the fourth side light emitting element 40D toward the fourth sealed end surface 66. The first extension portion 104C includes the first end surface 104A.

[0273] 33 and 34 show a schematic cross-sectional structure of the semiconductor light-emitting device 10, which schematically shows the region of light emitted from the semiconductor light-emitting device 10. In Fig. 33 and Fig. 34, the region of light is indicated by dots.

[0274] 31 and 32 , the laser light from the first to fourth side light emitting elements 40A to 40D is diffused (scattered) by the diffusing material 67. As a result, the laser light from the first to fourth side light emitting elements 40A to 40D includes laser light directed toward the substrate surface 21. The semiconductor light emitting device 10 includes first reflectors 80A to 80D that reflect at least a portion of the laser light from each of the first to fourth side light emitting elements 40A to 40D. In the sixth embodiment, the first reflectors 80A to 80D reflect at least a portion of the laser light from each of the first to fourth side light emitting elements 40A to 40D that is directed toward the substrate surface 21.

[0275] 33 , the first reflecting portion 80A is configured to reflect at least a portion of the laser light traveling from the first light-emitting side surface LS1 of the first side light emitting element 40A toward the substrate surface 21. In the sixth embodiment, the first extending portion 101C of the first wiring 101 configures the first reflecting portion 80A. In this manner, it can be said that the first wiring 101 has a portion that extends from the first light-emitting side surface LS1 toward the first sealing end surface 63 as the first reflecting portion 80A. As a result, the laser light traveling from the first light-emitting side surface LS1 toward the substrate surface 21 is reflected by the first extending portion 101C, passes through the first sealing end surface 63 or the sealing surface 61, and is emitted to the outside of the semiconductor light emitting device 10.

[0276] The first reflecting portion 80B is configured to reflect at least a portion of the laser light traveling from the fourth light-emitting side surface LS4 of the second side light emitting element 40B toward the substrate surface 21. In the sixth embodiment, the first extending portion 102C of the first wiring 102 configures the first reflecting portion 80B. In this manner, it can be said that the first wiring 102 has a portion that extends from the fourth light-emitting side surface LS4 toward the second sealing end surface 64 as the first reflecting portion 80B. As a result, the laser light traveling from the fourth light-emitting side surface LS4 toward the substrate surface 21 is reflected by the first extending portion 102C, passes through the second sealing end surface 64 or the sealing surface 61, and is emitted to the outside of the semiconductor light-emitting device 10.

[0277] 34 , the first reflecting portion 80C is configured to reflect at least a portion of the laser light traveling from the fifth light-emitting side surface LS5 of the third side light emitting element 40C toward the substrate surface 21. In the sixth embodiment, the first extending portion 103C of the first wiring 103 configures the first reflecting portion 80C. In this manner, it can be said that the first wiring 103 has a portion that extends from the fifth light-emitting side surface LS5 toward the third sealing end surface 65 as the first reflecting portion 80C. As a result, the laser light traveling from the fifth light-emitting side surface LS5 toward the substrate surface 21 is reflected by the first extending portion 103C, passes through the third sealing end surface 65 or the sealing surface 61, and is emitted to the outside of the semiconductor light emitting device 10.

[0278] The first reflector 80D is configured to reflect at least a portion of the laser light traveling from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D toward the substrate surface 21. In the sixth embodiment, the first extending portion 104C of the first wiring 104 configures the first reflector 80D. In this manner, it can be said that the first wiring 104 has a portion that extends from the eighth light-emitting side surface LS8 toward the fourth sealing end surface 66 as the first reflector 80D. As a result, the laser light traveling from the eighth light-emitting side surface LS8 toward the substrate surface 21 is reflected by the first extending portion 104C, passes through the fourth sealing end surface 66 or the sealing surface 61, and is emitted to the outside of the semiconductor light-emitting device 10.

[0279] The positions of the first end faces 101A and 102A in the Y-axis direction can be changed arbitrarily. For example, the first end face 101A may be disposed in a position flush with the first substrate side surface 23 in a plan view. The first end face 102A may be disposed in a position flush with the second substrate side surface 24 in a plan view. The positions of the first end faces 101A and 102A in the Y-axis direction may be any position that allows the first extension portions 101C and 102C to have a length that allows them to reflect at least a portion of the laser light directed toward the substrate surface 21.

[0280] The positions of the first end faces 103A and 104A in the X-axis direction can be changed as desired. For example, the first end face 103A may be disposed in a position flush with the third substrate side face 25 in a plan view. The first end face 104A may be disposed in a position flush with the fourth substrate side face 26 in a plan view. The positions of the first end faces 103A and 104A in the X-axis direction may be any position that allows the first extension portions 103C and 104C to reflect at least a portion of the laser light directed toward the substrate surface 21.

[0281] [Effects] The semiconductor light-emitting device 10 of the sixth embodiment has the following effects. (6-1) The plurality of side light emitting elements include a first side light emitting element 40A having a first light-emitting side surface LS1 and a second light-emitting side surface LS2, a second side light emitting element 40B having a third light-emitting side surface LS3 and a fourth light-emitting side surface LS4, a third side light emitting element 40C having a fifth light-emitting side surface LS5 and a sixth light-emitting side surface LS6, and a fourth side light emitting element 40D having a seventh light-emitting side surface LS7 and an eighth light-emitting side surface LS8. The first side light emitting element 40A is arranged to emit light from the first light-emitting side surface LS1 in a first direction (+Y direction) intersecting the thickness direction of the substrate 20. The second side light emitting element 40B is arranged to emit light from the fourth light-emitting side surface LS4 in a second direction (-Y direction) intersecting the thickness direction of the substrate 20 and different from the first direction. The third side light emitting element 40C is arranged to emit light from the fifth light emitting side surface LS5 in a third direction (+X direction) that intersects with the thickness direction of the substrate 20 and is different from both the first direction and the second direction. The fourth side light emitting element 40D is arranged to emit light from the eighth light emitting side surface LS8 in a fourth direction (-X direction) that intersects with the thickness direction of the substrate 20 and is different from each of the first direction, the second direction, and the third direction.

[0282] According to this configuration, the first to fourth side light emitting elements 40A to 40D emit light in four mutually different directions among directions intersecting the thickness direction of the substrate 20. This allows the semiconductor light emitting device 10 to emit light more widely.

[0283] Seventh Embodiment A semiconductor light-emitting device 10 according to a seventh embodiment will be described with reference to FIGS. 35 to 39. The semiconductor light-emitting device 10 according to the seventh embodiment differs from the semiconductor light-emitting device 10 according to the sixth embodiment mainly in the number and arrangement of side light-emitting elements. Differences from the sixth embodiment will be described in detail below, and components common to the sixth embodiment will be denoted by the same reference numerals and will not be described again. Note that the diffusing material 67 has been omitted in FIGS. 35, 38, and 39 to facilitate understanding of the drawings.

[0284] The semiconductor light-emitting device 10 of the seventh embodiment is configured such that, compared to the semiconductor light-emitting device 10 of the sixth embodiment, it further includes a fifth side light-emitting element 40E, a sixth side light-emitting element 40F, a seventh side light-emitting element 40G, and an eighth side light-emitting element 40H.

[0285] In the seventh embodiment, the fifth to eighth side light emitting elements 40E to 40H have the same configuration as one another. The fifth to eighth side light emitting elements 40E to 40H have the same configuration as the first to fourth side light emitting elements 40A to 40D of the sixth embodiment (see FIG. 28). In other words, the first to eighth side light emitting elements 40A to 40H have the same configuration as the side light emitting element 40 of the first embodiment (see FIG. 2). For this reason, the same reference numerals are used to designate components of the first to eighth side light emitting elements 40A to 40H that are common to the side light emitting element 40, and descriptions thereof will be omitted.

[0286] The first to eighth side light emitting elements 40A to 40H are arranged around the top light emitting element 50 in a plan view. More specifically, the first to eighth side light emitting elements 40A to 40H are arranged at 45° intervals around the top light emitting element 50 in a plan view. The arrangement of the first to fourth side light emitting elements 40A to 40D is the same as in the sixth embodiment.

[0287] Fifth side light emitting element 40E is arranged closer to first substrate side surface 23 (first sealing end surface 63) and third substrate side surface 25 (third sealing end surface 65) with respect to top light emitting element 50. In plan view, fifth side light emitting element 40E is arranged around top light emitting element 50 between first side light emitting element 40A and third side light emitting element 40C.

[0288] The sixth side light emitting element 40F is arranged closer to the second substrate side surface 24 (second sealing end surface 64) and the fourth substrate side surface 26 (fourth sealing end surface 66) with respect to the top light emitting element 50. In a plan view, the sixth side light emitting element 40F is arranged between the second side light emitting element 40B and the fourth side light emitting element 40D around the top light emitting element 50. The fifth side light emitting element 40E and the sixth side light emitting element 40F face each other with the top light emitting element 50 interposed therebetween.

[0289] The seventh side light emitting element 40G is arranged closer to the first substrate side surface 23 (first sealing end surface 63) and the fourth substrate side surface 26 (fourth sealing end surface 66) with respect to the top light emitting element 50. In a plan view, the seventh side light emitting element 40G is arranged around the top light emitting element 50 between the first side light emitting element 40A and the fourth side light emitting element 40D.

[0290] The eighth side light emitting element 40H is arranged closer to the second substrate side surface 24 (second sealing end surface 64) and the third substrate side surface 25 (third sealing end surface 65) with respect to the top light emitting element 50. In a plan view, the eighth side light emitting element 40H is arranged between the second side light emitting element 40B and the third side light emitting element 40C around the top light emitting element 50. The seventh side light emitting element 40G and the eighth side light emitting element 40H face each other across the top light emitting element 50. Note that the configuration and arrangement of the first to fourth side light emitting elements 40A to 40D are the same as those in the sixth embodiment, and therefore detailed description thereof will be omitted.

[0291] The fifth side light emitting element 40E has a ninth light emitting side surface LS9 and a tenth light emitting side surface LS10. The ninth light emitting side surface LS9 is formed on the first element side surface 43 of the fifth side light emitting element 40E, and the tenth light emitting side surface LS10 is formed on the second element side surface 44 of the fifth side light emitting element 40E. The fifth side light emitting element 40E is arranged so that the ninth light emitting side surface LS9 faces the first substrate side surface 23 (first sealing end surface 63) and the third substrate side surface 25 (third sealing end surface 65). In other words, the fifth side light emitting element 40E is arranged so that laser light is emitted from the ninth light emitting side surface LS9 in a fifth direction between the +Y direction (first direction) and the +X direction (third direction) in a planar view. Thus, the fifth direction is a direction different from the first to fourth directions in a planar view. More specifically, the fifth direction is a direction shifted by 45° from both the first direction and the third direction in a planar view. The tenth light-emitting side surface LS10 faces the second substrate side surface 24 (second sealing end surface 64) and the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the tenth light-emitting side surface LS10 faces a sixth direction between the −Y direction (second direction) and the −X direction (fourth direction) in a plan view. It can also be said that the tenth light-emitting side surface LS10 faces the sixth direction, which is the opposite direction to the fifth direction. The sixth direction is shifted by 45° from both the second direction and the fourth direction. In other words, the fifth side light-emitting element 40E is disposed so as to emit laser light from the tenth light-emitting side surface LS10 in the sixth direction.

[0292] The output of the laser light emitted from the ninth light-emitting side surface LS9 and the output of the laser light emitted from the tenth light-emitting side surface LS10 are different from each other. In the seventh embodiment, the ratio of the output of the laser light emitted from the ninth light-emitting side surface LS9 to the output of the laser light emitted from the tenth light-emitting side surface LS10 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the ninth light-emitting side surface LS9 and the tenth light-emitting side surface LS10. In the seventh embodiment, the reflectance of the reflective film formed on the ninth light-emitting side surface LS9 is set to be lower than the reflectance of the reflective film formed on the tenth light-emitting side surface LS10.

[0293] The sixth side light emitting element 40F has an eleventh light emitting side surface LS11 and a twelfth light emitting side surface LS12. The eleventh light emitting side surface LS11 is formed on the first element side surface 43 of the sixth side light emitting element 40F, and the twelfth light emitting side surface LS12 is formed on the second element side surface 44 of the sixth side light emitting element 40F. The sixth side light emitting element 40F is arranged so that the twelfth light emitting side surface LS12 faces the second substrate side surface 24 (second sealing end surface 64) and the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the sixth side light emitting element 40F is arranged so that the twelfth light emitting side surface LS12 emits laser light in a sixth direction between the -Y direction (second direction) and the -X direction (fourth direction). The eleventh light emitting side surface LS11 faces the first substrate side surface 23 (first sealing end surface 63) and the third substrate side surface 25 (third sealing end surface 65). In other words, the eleventh light-emitting side surface LS11 faces a fifth direction between the +Y direction (first direction) and the +X direction (third direction). Therefore, the eleventh light-emitting side surface LS11 faces the tenth light-emitting side surface LS10 of the fifth side light-emitting element 40E via the top light-emitting element 50. The sixth side light-emitting element 40F is disposed so as to emit laser light from the eleventh light-emitting side surface LS11 in the fifth direction.

[0294] The output of the laser light emitted from the twelfth light-emitting side surface LS12 and the output of the laser light emitted from the eleventh light-emitting side surface LS11 are different from each other. In the seventh embodiment, the ratio of the output of the laser light emitted from the twelfth light-emitting side surface LS12 to the output of the laser light emitted from the eleventh light-emitting side surface LS11 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the eleventh light-emitting side surface LS11 and the twelfth light-emitting side surface LS12. In the seventh embodiment, the reflectance of the reflective film formed on the twelfth light-emitting side surface LS12 is set to be lower than the reflectance of the reflective film formed on the eleventh light-emitting side surface LS11.

[0295] The seventh side light emitting element 40G has a thirteenth light emitting side surface LS13 and a fourteenth light emitting side surface LS14. The thirteenth light emitting side surface LS13 is formed on the first element side surface 43 of the seventh side light emitting element 40G, and the fourteenth light emitting side surface LS14 is formed on the second element side surface 44 of the seventh side light emitting element 40G. The seventh side light emitting element 40G is arranged so that the thirteenth light emitting side surface LS13 faces the first substrate side surface 23 (first sealing end surface 63) and the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the seventh side light emitting element 40G is arranged to emit laser light from the thirteenth light emitting side surface LS13 in a seventh direction between the first direction (+Y direction) and the fourth direction (-X direction). Thus, the seventh direction is a direction different from the first to sixth directions in a planar view. More specifically, the seventh direction is a direction offset by 45° from both the first direction and the fourth direction in a planar view. The fourteenth light-emitting side surface LS14 faces the second substrate side surface 24 (second sealed end surface 64) and the third substrate side surface 25 (third sealed end surface 65). In other words, the fourteenth light-emitting side surface LS14 faces the eighth direction, which is between the second direction (-Y direction) and the third direction (+X direction). The fourteenth light-emitting side surface LS14 can also be said to face the eighth direction, which is the opposite direction to the seventh direction. The eighth direction is shifted by 45° from both the second direction and the third direction. The seventh side light-emitting element 40G is arranged to emit laser light from the fourteenth light-emitting side surface LS14 in the seventh direction.

[0296] The output of the laser light emitted from the thirteenth light-emitting side surface LS13 and the output of the laser light emitted from the fourteenth light-emitting side surface LS14 are different from each other. In the seventh embodiment, the ratio of the output of the laser light emitted from the thirteenth light-emitting side surface LS13 to the output of the laser light emitted from the fourteenth light-emitting side surface LS14 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the thirteenth light-emitting side surface LS13 and the fourteenth light-emitting side surface LS14. In the seventh embodiment, the reflectance of the reflective film formed on the thirteenth light-emitting side surface LS13 is set to be lower than the reflectance of the reflective film formed on the fourteenth light-emitting side surface LS14.

[0297] The eighth side light emitting element 40H has a fifteenth light emitting side surface LS15 and a sixteenth light emitting side surface LS16. The fifteenth light emitting side surface LS15 is formed on the first element side surface 43 of the eighth side light emitting element 40H, and the sixteenth light emitting side surface LS16 is formed on the second element side surface 44 of the eighth side light emitting element 40H. The eighth side light emitting element 40H is arranged so that the sixteenth light emitting side surface LS16 faces the second substrate side surface 24 (second sealing end surface 64) and the third substrate side surface 25 (third sealing end surface 65). In other words, the eighth side light emitting element 40H is arranged so that laser light is emitted from the sixteenth light emitting side surface LS16 in an eighth direction between the second direction (-Y direction) and the third direction (+X direction). Furthermore, the fifteenth light emitting side surface LS15 faces the first substrate side surface 23 (first sealing end surface 63) and the fourth substrate side surface 26 (fourth sealing end surface 66). In other words, the fifteenth light-emitting side surface LS15 faces a seventh direction that is opposite to the eighth direction between the first direction (+Y direction) and the fourth direction (−X direction). The eighth side light-emitting element 40H is disposed so as to emit laser light from the fifteenth light-emitting side surface LS15 in the seventh direction.

[0298] The output of the laser light emitted from the sixteenth light-emitting side surface LS16 and the output of the laser light emitted from the fifteenth light-emitting side surface LS15 are different from each other. In the seventh embodiment, the ratio of the output of the laser light emitted from the sixteenth light-emitting side surface LS16 to the output of the laser light emitted from the fifteenth light-emitting side surface LS15 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the fifteenth and sixteenth light-emitting side surfaces LS15 and LS16. In the seventh embodiment, the reflectance of the reflective film formed on the sixteenth light-emitting side surface LS16 is set to be lower than the reflectance of the reflective film formed on the fifteenth light-emitting side surface LS15.

[0299] In the seventh embodiment, the output of laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the output of laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the output of laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the output of laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the output of laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the output of laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H are all equal to one another.

[0300] The output of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the output of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the output of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the output of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the output of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the output of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H can be changed individually and arbitrarily. In one example, the output of laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output of laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output of laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the output of laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the output of laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the output of laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the output of laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the output of laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H may be different from one another. In another example, one to seven of the output power of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the output power of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the output power of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the output power of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the output power of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the output power of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the output power of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the output power of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H may be different from the remaining ones.

[0301] In the seventh embodiment, the wavelength of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the wavelength of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the wavelength of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the wavelength of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the wavelength of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H are all equal to one another.

[0302] The wavelength of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the wavelength of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the wavelength of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the wavelength of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the wavelength of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H can be changed individually and arbitrarily. In one example, the wavelength of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the wavelength of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the wavelength of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the wavelength of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the wavelength of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H may be different from one another. In another example, one to seven of the wavelengths of the laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A, the wavelength of the laser light emitted from the fourth light-emitting side surface LS4 of the second side light-emitting element 40B, the wavelength of the laser light emitted from the fifth light-emitting side surface LS5 of the third side light-emitting element 40C, the wavelength of the laser light emitted from the eighth light-emitting side surface LS8 of the fourth side light-emitting element 40D, the wavelength of the laser light emitted from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E, the wavelength of the laser light emitted from the twelfth light-emitting side surface LS12 of the sixth side light-emitting element 40F, the wavelength of the laser light emitted from the thirteenth light-emitting side surface LS13 of the seventh side light-emitting element 40G, and the wavelength of the laser light emitted from the sixteenth light-emitting side surface LS16 of the eighth side light-emitting element 40H may be different from the remaining wavelengths.

[0303] 36, the semiconductor light emitting device 10 includes first wirings 105 to 108 in addition to the first wirings 101 to 104 of the sixth embodiment. Each of the first wirings 105 to 108 is formed on the substrate surface 21.

[0304] The first wirings 105 to 108 have the same shape and size as each other. The first wirings 105 to 108 have the same shape and size as the first wirings 101 to 104 of the sixth embodiment. The first wirings 105 to 108 are formed of a material containing Cu, similar to the first wirings 101 to 104. The shape and size of the first wirings 105 to 108 can be changed as desired.

[0305] The first wiring 105 is arranged closer to the first substrate side surface 23 and the third substrate side surface 25 than the second wiring 32. The first wiring 105 is arranged between the first wiring 101 and the first wiring 103 in the circumferential direction (hereinafter referred to as the "circumferential direction") of the second wiring 32. In a plan view, the first wiring 105 is arranged such that the direction along the fifth direction is the longitudinal direction and the direction along the seventh direction is the lateral direction.

[0306] The first wiring 106 is arranged closer to the second substrate side surface 24 and the fourth substrate side surface 26 than the second wiring 32. The first wiring 106 is arranged between the first wiring 102 and the first wiring 104 in the circumferential direction. Therefore, in a plan view, the first wiring 106 is arranged opposite the first wiring 105 with the second wiring 32 interposed therebetween. In a plan view, the first wiring 105, the second wiring 32, and the first wiring 106 are arranged in a line in the fifth direction (sixth direction). In a plan view, the first wiring 106 is arranged so that the sixth direction is its longitudinal direction and the direction along the seventh direction is its lateral direction.

[0307] The first wiring 107 is arranged closer to the first substrate side surface 23 and the fourth substrate side surface 26 than the second wiring 32. The first wiring 107 is arranged between the first wiring 101 and the first wiring 104 in the circumferential direction. In a plan view, the first wiring 107 is arranged such that the direction along the seventh direction is the longitudinal direction and the direction along the fifth direction is the lateral direction.

[0308] The first wiring 108 is arranged closer to the second substrate side surface 24 and the third substrate side surface 25 than the second wiring 32. The first wiring 108 is arranged between the first wiring 102 and the first wiring 103 in the circumferential direction. Therefore, in a plan view, the first wiring 108 is arranged opposite the first wiring 107 with the second wiring 32 interposed therebetween. In a plan view, the first wiring 107, the second wiring 32, and the first wiring 108 are arranged in a line in the seventh direction (eighth direction). In a plan view, the first wiring 108 is arranged so that the direction along the eighth direction is the longitudinal direction and the direction along the fifth direction is the lateral direction.

[0309] 37, the semiconductor light emitting device 10 includes first electrodes 125 to 128 in addition to the first electrodes 121 to 124 of the sixth embodiment. Each of the first electrodes 125 to 128 is formed on the rear surface 22 of the substrate. Each of the first electrodes 125 to 128 is formed of a material containing, for example, Cu.

[0310] The first electrode 125 is disposed closer to the first substrate side surface 23 and the third substrate side surface 25 than the second electrode 35. In a plan view, the first electrode 125 is disposed at a position overlapping the first wiring 105 (see FIG. 36 ).

[0311] The first electrode 126 is disposed closer to the second substrate side surface 24 and the fourth substrate side surface 26 than the second electrode 35. In a plan view, the first electrode 126 is disposed at a position overlapping with the first wiring 106 (see FIG. 36 ).

[0312] The first electrode 127 is disposed closer to the first substrate side surface 23 and the fourth substrate side surface 26 than the second electrode 35. In a plan view, the first electrode 127 is disposed at a position overlapping the first wiring 107 (see FIG. 36 ).

[0313] The first electrode 128 is disposed closer to the second substrate side surface 24 and the third substrate side surface 25 than the second electrode 35. In a plan view, the first electrode 128 is disposed at a position overlapping the first wiring 108 (see FIG. 36 ).

[0314] 36 and 37 , the semiconductor light emitting device 10 includes first vias 145 to 148 in addition to the first vias 141 to 144 of the sixth embodiment. Each of the first vias 145 to 148 penetrates the substrate 20 in its thickness direction (Z-axis direction). Each of the first vias 145 to 148 is formed of a material containing, for example, Cu.

[0315] The first via 145 electrically connects the first wiring 105 and the first electrode 125. A plurality of first vias 145 are provided. The plurality of first vias 145 are arranged at positions overlapping both the first wiring 105 and the first electrode 125 in a plan view. The plurality of first vias 145 are arranged so that the number of the first vias 145 in the longitudinal direction (Y-axis direction) of the first wiring 105 (first electrode 125) is greater than the number of the first vias 145 in the lateral direction (X-axis direction) of the first wiring 105 (first electrode 125).

[0316] The first via 146 electrically connects the first wiring 106 and the first electrode 126. A plurality of first vias 146 are provided. The plurality of first vias 146 are arranged at positions overlapping both the first wiring 106 and the first electrode 126 in a plan view. The arrangement of the first vias 146 is the same as the arrangement of the first vias 145.

[0317] The first via 147 electrically connects the first wiring 107 and the first electrode 127. A plurality of first vias 147 are provided. The plurality of first vias 147 are arranged at positions overlapping both the first wiring 107 and the first electrode 127 in a plan view. The plurality of first vias 147 are arranged so that the number of the first vias 147 in the longitudinal direction (X-axis direction) of the first wiring 107 (first electrode 127) is greater than the number of the first vias 147 in the lateral direction (Y-axis direction) of the first wiring 107 (first electrode 127).

[0318] The first via 148 electrically connects the first wiring 108 and the first electrode 128. A plurality of first vias 148 are provided. The plurality of first vias 148 are arranged at positions overlapping both the first wiring 108 and the first electrode 128 in a plan view. The arrangement of the first vias 148 is the same as the arrangement of the first via 147. The number of first vias 145 to 148 can be changed as desired. In one example, there may be only one of each of the first vias 145 to 148. The number of first vias 141 to 144 can be changed as desired, as in the sixth embodiment.

[0319] As shown in Fig. 38 , the fifth side light emitting element 40E is mounted on the first wiring 105. More specifically, the fifth side light emitting element 40E is joined to the first wiring 105 by a conductive bonding material (not shown). In other words, the fifth side light emitting element 40E is mounted on the first wiring 105. As a result, the cathode electrode 48 (not shown in Fig. 38 ) of the fifth side light emitting element 40E is electrically connected to the first wiring 105. The anode electrode 47 of the fifth side light emitting element 40E is electrically connected to the third wiring 111 by the wire W1e.

[0320] Fifth side light emitting element 40E is arranged closer to second wiring 32 of first wiring 105. More specifically, the center of fifth side light emitting element 40E in the fifth direction is located closer to second wiring 32 than the center of first wiring 105 in the fifth direction.

[0321] The first wiring 105 includes a first end face 105A and a second end face 105B that constitute both end faces of the first wiring 105 in the fifth direction. The first end face 105A is the end face farther from the second wiring 32 of both end faces of the first wiring 105 in the fifth direction, and the second end face 105B is the end face closer to the second wiring 32 of both end faces of the first wiring 105 in the fifth direction. In the seventh embodiment, the first end face 105A is located more inward (closer to the second wiring 32) than both the first substrate side face 23 and the third substrate side face 25.

[0322] The distance D1e in the fifth direction between the first element side surface 43 (ninth light-emitting side surface LS9) of the fifth side light emitting element 40E and the first end surface 105A of the first wiring 105 is greater than the distance D2e in the fifth direction between the second element side surface 44 (tenth light-emitting side surface LS10) of the fifth side light emitting element 40E and the second end surface 105B of the first wiring 105. Thus, the first wiring 105 can also be said to have a first extension portion 105C that extends from the first element side surface 43 (ninth light-emitting side surface LS9) of the fifth side light emitting element 40E toward the first sealed end surface 63 and the third sealed end surface 65. The first extension portion 105C can be said to extend in the fifth direction from the ninth light-emitting side surface LS9. The first extension portion 105C includes the first end surface 105A.

[0323] As shown in Figure 39, the sixth side light emitting element 40F is mounted on the first wiring 106. More specifically, the sixth side light emitting element 40F is joined to the first wiring 106 by a conductive bonding material (not shown). In other words, the sixth side light emitting element 40F is mounted on the first wiring 106. As a result, the cathode electrode 48 (not shown in Figure 39) of the sixth side light emitting element 40F is electrically connected to the first wiring 106. The anode electrode 47 of the sixth side light emitting element 40F is electrically connected to the third wiring 112 by the wire W1f.

[0324] The sixth side light emitting element 40F is arranged closer to the second wiring 32 of the first wiring 106. More specifically, the center of the sixth direction of the sixth side light emitting element 40F is located closer to the second wiring 32 than the center of the first wiring 106 in the sixth direction.

[0325] The first wiring 106 includes a first end face 106A and a second end face 106B that constitute both end faces in the sixth direction of the first wiring 106. The first end face 106A is the end face farther from the second wiring 32 of both end faces in the sixth direction of the first wiring 106, and the second end face 106B is the end face closer to the second wiring 32 of both end faces in the sixth direction of the first wiring 106. In the seventh embodiment, the first end face 106A is located more inward (closer to the second wiring 32) than both the second substrate side face 24 and the fourth substrate side face 26.

[0326] The distance D1f in the sixth direction between the second element side surface 44 (twelfth light-emitting side surface LS12) of the sixth side light emitting element 40F and the first end surface 106A of the first wiring 106 is greater than the distance D2f in the sixth direction between the first element side surface 43 (eleventh light-emitting side surface LS11) of the sixth side light emitting element 40F and the second end surface 106B of the first wiring 106. Thus, the first wiring 106 can also be said to have a first extension portion 106C that is a portion extending from the second element side surface 44 (twelfth light-emitting side surface LS12) of the sixth side light emitting element 40F toward the second sealed end surface 64 and the fourth sealed end surface 66. The first extension portion 106C can be said to extend in the sixth direction from the twelfth light-emitting side surface LS12. The first extension portion 106C includes the first end surface 106A.

[0327] The seventh side light emitting element 40G is mounted on the first wiring 107. More specifically, the seventh side light emitting element 40G is joined to the first wiring 107 by a conductive bonding material SD. In other words, the seventh side light emitting element 40G is mounted on the first wiring 107. As a result, the cathode electrode 48 (not shown in FIG. 39 ) of the seventh side light emitting element 40G is electrically connected to the first wiring 107. The anode electrode 47 of the seventh side light emitting element 40G is electrically connected to the third wiring 111 by a wire W1g.

[0328] Seventh side light emitting element 40G is arranged closer to second wiring 32 of first wiring 107. More specifically, the center of seventh direction of seventh side light emitting element 40G is located closer to second wiring 32 than the center of first wiring 107 in the seventh direction.

[0329] The first wiring 107 includes a first end face 107A and a second end face 107B that constitute both end faces of the first wiring 107 in the seventh direction. The first end face 107A is the end face farther from the second wiring 32 of both end faces of the first wiring 107 in the seventh direction, and the second end face 107B is the end face closer to the second wiring 32 of both end faces of the first wiring 107 in the seventh direction. In the seventh embodiment, the first end face 107A is located more inward (closer to the second wiring 32) than both the first substrate side face 23 and the fourth substrate side face 26.

[0330] The distance D1g in the seventh direction between the first element side surface 43 (thirteenth light-emitting side surface LS13) of the seventh side light emitting element 40G and the first end surface 107A of the first wiring 107 is greater than the distance D2g in the seventh direction between the second element side surface 44 (fourteenth light-emitting side surface LS14) of the seventh side light emitting element 40G and the second end surface 107B of the first wiring 107. Thus, the first wiring 107 can also be said to have a first extension portion 107C that extends from the first element side surface 43 (thirteenth light-emitting side surface LS13) of the seventh side light emitting element 40G toward the first sealed end surface 63 and the fourth sealed end surface 66. The first extension portion 107C can be said to extend in the seventh direction from the thirteenth light-emitting side surface LS13. The first extension portion 107C includes the first end surface 107A.

[0331] As shown in Figure 38, the eighth side light emitting element 40H is mounted on the first wiring 108. More specifically, the eighth side light emitting element 40H is joined to the first wiring 108 by a conductive bonding material SD. In other words, the eighth side light emitting element 40H is mounted on the first wiring 108. As a result, the cathode electrode 48 (not shown in Figure 38) of the eighth side light emitting element 40H is electrically connected to the first wiring 108. The anode electrode 47 of the eighth side light emitting element 40H is electrically connected to the third wiring 112 by a wire W1h.

[0332] The eighth side light emitting element 40H is arranged closer to the second wiring 32 of the first wiring 108. More specifically, the center of the eighth direction of the eighth side light emitting element 40H is located closer to the second wiring 32 than the center of the first wiring 108 in the eighth direction.

[0333] The first wiring 108 includes a first end face 108A and a second end face 108B that constitute both end faces of the first wiring 108 in the direction along the eighth direction. The first end face 108A is the end face farther from the second wiring 32 of both end faces of the first wiring 108 in the eighth direction, and the second end face 108B is the end face closer to the second wiring 32 of both end faces of the first wiring 108 in the eighth direction. In the seventh embodiment, the first end face 108A is located more inward (closer to the second wiring 32) than both the second substrate side face 24 and the third substrate side face 25.

[0334] The distance D1h in the eighth direction between the second element side surface 44 (sixteenth light-emitting side surface LS16) of the eighth side light emitting element 40H and the first end surface 108A of the first wiring 108 is greater than the distance D2h in the eighth direction between the first element side surface 43 (fifteenth light-emitting side surface LS15) of the eighth side light emitting element 40H and the second end surface 108B of the first wiring 108. Thus, the first wiring 108 can also be said to have a first extension portion 108C that extends from the second element side surface 44 (sixteenth light-emitting side surface LS16) of the eighth side light emitting element 40H toward the second sealed end surface 64 and the third sealed end surface 65. The first extension portion 108C can be said to extend in the eighth direction from the sixteenth light-emitting side surface LS16. The first extension portion 108C includes the first end surface 108A.

[0335] The laser light from the fifth to eighth side light emitting elements 40E to 40H is diffused (scattered) by the diffusing material 67. As a result, the laser light from the fifth to eighth side light emitting elements 40E to 40H includes laser light directed toward the substrate surface 21. The semiconductor light emitting device 10 includes first reflecting portions 80E to 80H that reflect at least a portion of the laser light from each of the fifth to eighth side light emitting elements 40E to 40H that is directed toward the substrate surface 21.

[0336] The first reflector 80E is configured to reflect at least a portion of the laser light traveling from the ninth light-emitting side surface LS9 of the fifth side light-emitting element 40E toward the substrate surface 21. In the seventh embodiment, the first extending portion 105C of the first wiring 105 configures the first reflector 80E. In this manner, it can be said that the first wiring 105 has a portion that extends from the ninth light-emitting side surface LS9 toward the first sealing end surface 63 and the third sealing end surface 65 as the first reflector 80E. As a result, the laser light traveling from the ninth light-emitting side surface LS9 toward the substrate surface 21 is reflected by the first extending portion 105C and passes through the first sealing end surface 63, the third sealing end surface 65, or the sealing surface 61 to be emitted to the outside of the semiconductor light-emitting device 10.

[0337] 39 , the first reflector 80F is configured to reflect at least a portion of the laser light traveling from the twelfth light-emitting side surface LS12 of the sixth side light emitting element 40F toward the substrate surface 21. In the seventh embodiment, the first extending portion 106C of the first wiring 106 configures the first reflector 80F. In this manner, the first wiring 106 can also be said to have a portion that extends from the twelfth light-emitting side surface LS12 toward the second sealing end surface 64 and the fourth sealing end surface 66 as the first reflector 80F. As a result, the laser light traveling from the twelfth light-emitting side surface LS12 toward the substrate surface 21 is reflected by the first extending portion 106C and passes through the second sealing end surface 64, the fourth sealing end surface 66, or the sealing surface 61 to be emitted to the outside of the semiconductor light emitting device 10.

[0338] The first reflector 80G is configured to reflect at least a portion of the laser light traveling from the thirteenth light-emitting side surface LS13 of the seventh side light emitting element 40G toward the substrate surface 21. In the seventh embodiment, the first extending portion 107C of the first wiring 107 configures the first reflector 80G. In this manner, the first wiring 107 can also be said to have a portion that extends from the thirteenth light-emitting side surface LS13 toward the first sealing end surface 63 and the fourth sealing end surface 66 as the first reflector 80G. As a result, the laser light traveling from the thirteenth light-emitting side surface LS13 toward the substrate surface 21 is reflected by the first extending portion 107C and passes through the first sealing end surface 63, the fourth sealing end surface 66, or the sealing surface 61 to be emitted to the outside of the semiconductor light-emitting device 10.

[0339] 38 , the first reflecting portion 80H is configured to reflect at least a portion of the laser light traveling from the sixteenth light-emitting side surface LS16 of the eighth side light emitting element 40H toward the substrate surface 21. In the seventh embodiment, the first extending portion 108C of the first wiring 108 configures the first reflecting portion 80H. In this manner, the first wiring 108 can also be said to have a portion that extends from the sixteenth light-emitting side surface LS16 toward the second sealing end surface 64 and the third sealing end surface 65 as the first reflecting portion 80H. As a result, the laser light traveling from the sixteenth light-emitting side surface LS16 toward the substrate surface 21 is reflected by the first extending portion 108C and passes through the second sealing end surface 64, the third sealing end surface 65, or the sealing surface 61 to be emitted to the outside of the semiconductor light-emitting device 10.

[0340] The position of first end face 105A in the fifth direction, the position of first end face 106A in the sixth direction, the position of first end face 107A in the seventh direction, and the position of first end face 108A in the eighth direction can be changed as desired. The first end faces 105A to 108A may be positioned such that the first extensions 105C to 108C have lengths that allow them to reflect at least a portion of the laser light directed toward substrate surface 21.

[0341] [Effects] The semiconductor light-emitting device 10 of the seventh embodiment has the following effects: (7-1) The plurality of side light emitting elements include a fifth side light emitting element 40E that is arranged between the first side light emitting element 40A and the third side light emitting element 40C and has a ninth light-emitting side surface LS9 and a tenth light-emitting side surface LS10, a sixth side light emitting element 40F that is arranged between the second side light emitting element 40B and the fourth side light emitting element 40D and has an eleventh light-emitting side surface LS11 and a twelfth light-emitting side surface LS12, a seventh side light emitting element 40G that is arranged between the first side light emitting element 40A and the fourth side light emitting element 40D and has a thirteenth light-emitting side surface LS13 and a fourteenth light-emitting side surface LS14, and an eighth side light emitting element 40H that is arranged between the second side light emitting element 40B and the third side light emitting element 40C and has a fifteenth light-emitting side surface LS15 and a sixteenth light-emitting side surface LS16. The fifth side light emitting element 40E is arranged to emit light from the ninth light-emitting side surface LS9 in a fifth direction that is a direction intersecting the thickness direction of the substrate 20 and between the first and third directions. The sixth side light emitting element 40F is arranged to emit light from the twelfth light-emitting side surface LS12 in a sixth direction that is a direction intersecting the thickness direction of the substrate 20 and between the second and fourth directions. The seventh side light emitting element 40G is arranged to emit light from the thirteenth light-emitting side surface LS13 in a seventh direction that is a direction intersecting the thickness direction of the substrate 20 and between the first and fourth directions. The eighth side light emitting element 40H is arranged to emit light from the sixteenth light-emitting side surface LS16 in an eighth direction that is a direction intersecting the thickness direction of the substrate 20 and between the second and third directions.

[0342] According to this configuration, the first to eighth side light emitting elements 40A to 40H emit light in eight different directions that intersect with the thickness direction of the substrate 20. This allows the semiconductor light emitting device 10 to emit light more widely.

[0343] 40 to 45, a semiconductor light emitting device 10 according to an eighth embodiment will be described. The semiconductor light emitting device 10 according to the eighth embodiment differs from the semiconductor light emitting device 10 according to the first embodiment mainly in the configuration of the substrate. Below, differences from the first embodiment will be described in detail, and components common to the components of the semiconductor light emitting device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0344] [Overall Configuration of Semiconductor Light-Emitting Device] The configuration of the semiconductor light-emitting device 10 of the eighth embodiment will be described with reference to Fig. 40 and Fig. 41. Note that the diffusing material 67 is omitted in Fig. 40 to make the drawing easier to understand.

[0345] As shown in Figure 40, the semiconductor light-emitting device 10 includes a substrate 160 in place of the substrate 20, the first to third wirings 31 to 33, the first to third electrodes 34 to 36, and the first to third vias 37 to 39 (all of which are shown in Figure 1). The substrate 160 is configured as a component that supports the side light-emitting element 40 and the top light-emitting element 50. The substrate 160 includes an insulating substrate 160A formed, for example, from black epoxy resin. The insulating substrate 160A can also be formed from a heat-resistant material such as engineering plastic.

[0346] The eighth embodiment differs from the first embodiment in that wiring such as the first wiring 31 (see FIG. 2 ) is formed on the substrate surface 21 (see FIG. 2 ), and external electrodes such as the first electrode 34 (see FIG. 4 ) are formed on the substrate back surface 22 (see FIG. 4 ). Instead of the wiring and external electrodes, the substrate 160 includes a first conductive portion 180, a second conductive portion 190, and a third conductive portion 200 formed from a conductive material. The first conductive portion 180, the second conductive portion 190, and the third conductive portion 200 are formed, for example, by a metal frame. In one example, a copper frame is used for the first conductive portion 180, the second conductive portion 190, and the third conductive portion 200. A plating film may be provided on the surface of the frame formed as the first conductive portion 180, the second conductive portion 190, and the third conductive portion 200. Examples of plating films include Ag plating and Ni / Pd / Au plating. The first conductive part 180, the second conductive part 190, and the third conductive part 200 are provided on the insulating substrate 160A. In this way, the substrate 160 of the eighth embodiment includes the first conductive part 180, the second conductive part 190, the third conductive part 200, and the insulating substrate 160A.

[0347] In a plan view, the substrate 160 has a rectangular outer shape with the X-axis direction as its short side and the Y-axis direction as its long side. The substrate 160 has a substrate front surface 161 and a substrate back surface 162 (see FIG. 41 ) facing opposite sides in the Z-axis direction, and first to fourth substrate side surfaces 163 to 166 connecting the substrate front surface 161 and the substrate back surface 162. The first substrate side surface 163 and the second substrate side surface 164 constitute both end surfaces of the substrate 160 in the Y-axis direction. In a plan view, the first substrate side surface 163 and the second substrate side surface 164 each extend in the X-axis direction. The third substrate side surface 165 and the fourth substrate side surface 166 constitute both end surfaces of the substrate 160 in the X-axis direction. In a plan view, the third substrate side surface 165 and the fourth substrate side surface 166 each extend in the Y-axis direction. Note that the shape of the substrate 160 in a plan view can be arbitrarily changed.

[0348] Insulating substrate 160A holds all of first conductive portion 180, second conductive portion 190, and third conductive portion 200. Insulating substrate 160A is integrally formed with first conductive portion 180, second conductive portion 190, and third conductive portion 200 by resin molding. In other words, insulating substrate 160A is a molded resin that holds all of first conductive portion 180, second conductive portion 190, and third conductive portion 200.

[0349] The insulating substrate 160A has a bottom wall portion 171 and a side wall portion 172. In the eighth embodiment, the bottom wall portion 171 and the side wall portion 172 are integrally formed. The bottom wall portion 171 is formed in a flat plate shape with its thickness direction in the Z-axis direction. In other words, the Z-axis direction can also be said to be the thickness direction of the substrate 160. The bottom wall portion 171 has a substrate front surface 161 and a substrate back surface 162. The substrate front surface 161 is configured as the surface of the bottom wall portion 171 facing in the +Z direction. The substrate back surface 162 is configured as the surface of the bottom wall portion 171 facing in the -Z direction.

[0350] 41 , a first conductive part 180, a second conductive part 190, and a third conductive part 200 are provided on bottom wall part 171. First conductive part 180, second conductive part 190, and third conductive part 200 each penetrate bottom wall part 171 in the Z-axis direction.

[0351] The sidewall portion 172 is provided on the bottom wall portion 171. In a plan view, the sidewall portion 172 surrounds both the side light emitting element 40 and the top light emitting element 50. As shown in FIG. 40 , the sidewall portion 172 has a pair of first sidewall portions 172A spaced apart from each other and a second sidewall portion 172B connecting the pair of first sidewall portions 172A. In the eighth embodiment, the pair of first sidewall portions 172A and the second sidewall portions 172B are integrally formed. The pair of first sidewall portions 172A are arranged spaced apart from each other in the X-axis direction. In a plan view, each first sidewall portion 172A extends in the Y-axis direction, i.e., the longitudinal direction of the substrate 160. In a plan view, the second sidewall portion 172B extends in the X-axis direction, i.e., the lateral direction of the substrate 160. The second side wall portion 172B is disposed closer to the second substrate side surface 164 of the substrate 160 than the side light emitting element 40. In this manner, the insulating substrate 160A of the eighth embodiment has a configuration in which a portion corresponding to the substrate 20 (see FIG. 5) of the first embodiment and a portion corresponding to the side wall 70 (see FIG. 5) are integrated together.

[0352] The first conductive portion 180 provided on the bottom wall portion 171 has a first conductive front surface 181 and a first conductive back surface 182 that face opposite each other in the Z-axis direction. The first conductive surface 181 faces the same side as the substrate front surface 161, and the first conductive back surface 182 faces the same side as the substrate back surface 162. The first conductive surface 181 is exposed from the bottom wall portion 171 and, in the illustrated example, is formed so as to be flush with the substrate front surface 161. The first conductive back surface 182 is exposed from the bottom wall portion 171 and, in the illustrated example, is formed so as to be flush with the substrate back surface 162. Here, in the eighth embodiment, the first conductive surface 181 corresponds to the "conductive surface."

[0353] The first conductive part 180 includes a first mounting part 183 and a plurality of (e.g., three) first suspension lead parts 184 extending from side edges of the first mounting part 183. Both edges of the first mounting part 183 in the X-axis direction are positioned to overlap with the side wall part 172 of the substrate 160 in a plan view. The first mounting part 183 is a part of the first conductive part 180 exposed from the substrate front surface 161 and corresponds to the first wiring in the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first wiring. The first conductive back surface 182 exposed from the substrate back surface 162 corresponds to the first electrode in the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first electrode.

[0354] The side light emitting element 40 is mounted on the first mounting portion 183 (first conductive surface 181) of the first conductive portion 180. More specifically, the side light emitting element 40 is bonded to the surface of the first conductive surface 181 of the first mounting portion 183 that is exposed from the bottom wall portion 171 by the conductive bonding material SD. Therefore, it can be said that the side light emitting element 40 is mounted on the first conductive portion 180 (first mounting portion 183). The side light emitting element 40 is electrically connected to the first conductive portion 180 via the conductive bonding material SD.

[0355] 40 , the three first suspension lead portions 184 extend from the side edge of the first mounting portion 183 on the first substrate side surface 163 side, the side edge of the third substrate side surface 165 side, and the side edge of the fourth substrate side surface 166 side. Therefore, the three first suspension lead portions 184 are exposed from the first substrate side surface 163, the third substrate side surface 165, and the fourth substrate side surface 166. The first suspension lead portions 184 extending from the side edge of the first mounting portion 183 on the first substrate side surface 163 side are also exposed from the substrate surface 161 of the bottom wall portion 171. On the other hand, the first suspension lead portions 184 extending from the side edge portions on the third substrate side surface 165 and the fourth substrate side surface 166 side are provided at positions overlapping with the side wall portions 172 in a plan view.

[0356] Both the second conductive portion 190 and the third conductive portion 200 are arranged closer to the second substrate side surface 164 than the first conductive portion 180. The third conductive portion 200 is arranged closer to the fourth substrate side surface 166 than the second conductive portion 190.

[0357] 41 , second conductive portion 190 has second conductive front surface 191 and second conductive back surface 192 that face opposite each other in the Z-axis direction. Second conductive surface 191 faces the same side as substrate front surface 161, and second conductive back surface 192 faces the same side as substrate back surface 162. Second conductive front surface 191 is exposed from bottom wall portion 171 and, in the example shown, is formed so as to be flush with substrate front surface 161. Second conductive back surface 192 is exposed from bottom wall portion 171 and, in the example shown, is formed so as to be flush with substrate back surface 162.

[0358] 40 , the second conductive part 190 includes a second mounting part 193 and a plurality of (for example, two) second hanging lead parts 194 extending from side edges of the second mounting part 193. Of the side edges of the second mounting part 193, both the side edge part closer to the second board side surface 164 and the side edge part closer to the third board side surface 165 are provided at positions overlapping with the side wall part 172 of the board 160 in a plan view.

[0359] 41 , the top-surface light emitting element 50 is mounted on the second mounting portion 193 of the second conductive portion 190. More specifically, the top-surface light emitting element 50 is bonded to the surface of the second conductive surface 191 of the second mounting portion 193 that is exposed from the bottom wall portion 171 by the conductive bonding material SD. Therefore, it can also be said that the top-surface light emitting element 50 is mounted on the second conductive portion 190 (second mounting portion 193). The top-surface light emitting element 50 is electrically connected to the second conductive portion 190 via the conductive bonding material SD.

[0360] As shown in FIG. 40 , the two second suspension lead portions 194 extend from the side edge of the second mounting portion 193 on the second substrate side surface 164 side and the side edge on the third substrate side surface 165 side. Therefore, the two second suspension lead portions 194 are exposed from the second substrate side surface 164 and the third substrate side surface 165. The second suspension lead portions 194 extending from the side edge portions on the second substrate side surface 164 and the third substrate side surface 165 side are positioned so as to overlap the side wall portion 172 in a plan view. The second mounting portion 193 is a portion of the second conductive portion 190 exposed from the substrate front surface 161 and corresponds to the second wiring in the first embodiment. Therefore, it can be said that the second conductive portion 190 includes the second wiring. The second conductive back surface 192 exposed from the substrate back surface 162 corresponds to the second electrode in the first embodiment. Therefore, it can be said that the second conductive portion 190 includes the second electrode.

[0361] The third conductive portion 200 has a third conductive front surface 201 and a third conductive back surface (not shown) that face opposite each other in the Z-axis direction. The third conductive front surface 201 faces the same side as the substrate front surface 161, and the third conductive back surface faces the same side as the substrate back surface 162 (see FIG. 41 ). The third conductive front surface 201 is exposed from the bottom wall portion 171 and, in the illustrated example, is formed so as to be flush with the substrate front surface 161. The third conductive back surface is exposed from the bottom wall portion 171 and, in one example, is formed so as to be flush with the substrate back surface 162.

[0362] Thus, substrate surface 161 of substrate 160 includes the insulating substrate surface of insulating substrate 160A, first conductive surface 181 of first conductive portion 180, second conductive surface 191 of second conductive portion 190, and third conductive surface 201 of third conductive portion 200. The insulating substrate surface is the surface of bottom wall portion 171 of insulating substrate 160A that faces the same side as substrate surface 161.

[0363] 41 , substrate back surface 162 of substrate 160 includes the insulating substrate back surface of insulating substrate 160A, first conductive back surface 182 of first conductive portion 180, second conductive back surface 192 of second conductive portion 190, and third conductive back surface (not shown) of third conductive portion 200. The insulating substrate back surface is the surface of bottom wall portion 171 of insulating substrate 160A that faces the same side as substrate back surface 162.

[0364] As shown in FIG. 40 , the third conductive part 200 includes a third mounting part 203 and multiple (e.g., two) third suspension lead parts 204 extending from the side edges of the third mounting part 203. Both the side edge part of the third mounting part 203, closer to the second substrate side surface 164 and the side edge part closer to the fourth substrate side surface 166, are positioned so as to overlap the side wall part 172 of the substrate 160 in a plan view. The third mounting part 203 is a part of the third conductive part 200 exposed from the substrate front surface 161 and corresponds to the third wiring in the first embodiment. Therefore, it can be said that the third conductive part 200 includes the third wiring. A third conductive back surface (not shown) exposed from the substrate back surface 162 corresponds to the third electrode in the first embodiment. Therefore, it can be said that the third conductive part 200 includes the third electrode.

[0365] The anode electrode 47 of the side light emitting element 40 is electrically connected to the third mounting portion 203 by a wire W1. The anode electrode 54 of the top light emitting element 50 is electrically connected to the third mounting portion 203 by a wire W2. More specifically, the wires W1 and W2 are joined to the surface of the third conductive surface 201 of the third mounting portion 203 that is exposed from the bottom wall portion 171. The wires W1 and W2 are formed, for example, from the same material as the wires W1 and W2 in the first embodiment.

[0366] Both the side light emitting element 40 and the top light emitting element 50 are sealed with sealing resin 60. The sealing resin 60 is provided in a space surrounded by the bottom wall portion 171 and the side wall portion 172. Therefore, the second sealing end surface 64 of the sealing resin 60 contacts the second side wall portion 172B, and both the third sealing end surface 65 and the fourth sealing end surface 66 contact the pair of first side wall portions 172A. Meanwhile, the first sealing end surface 63 is exposed from the side wall portion 172. In the illustrated example, the first sealing end surface 63 is formed so as to be flush with the first substrate side surface 163. Furthermore, as in the first embodiment, a diffusing material 67 is mixed into the sealing resin 60.

[0367] 40 , in a plan view, the area of ​​the portion of first mounting portion 183 exposed from bottom wall portion 171 is larger than the area of ​​side light emitting element 40. More specifically, the length in the X-axis direction of first mounting portion 183 is longer than the length in the X-axis direction of side light emitting element 40, and the length in the Y-axis direction of first mounting portion 183 is longer than the length in the Y-axis direction of side light emitting element 40.

[0368] Side light emitting element 40 is disposed in a portion of first mounting portion 183 closer to second mounting portion 193 (second substrate side surface 164). More specifically, the center of side light emitting element 40 in the Y-axis direction is located closer to second mounting portion 193 (second substrate side surface 164) than the center of first mounting portion 183 in the Y-axis direction.

[0369] The first mounting portion 183 includes a first end face 183A and a second end face 183B that constitute both end faces of the first mounting portion 183 in the Y axis direction. The first end face 183A is the end face of the both end faces of the first mounting portion 183 that is closer to the first substrate side face 163, and the second end face 183B is the end face of the both end faces of the first mounting portion 183 that is closer to the second substrate side face 164. In the eighth embodiment, the first end face 183A is disposed more inward than the first substrate side face 163 (closer to the second substrate side face 164). In a plan view, the first end face 183A is disposed closer to the first substrate side face 163 than the center in the Y axis direction between the first substrate side face 163 and the first element side face 43 (first light-emitting side face LS1) of the side light emitting element 40.

[0370] In a plan view, the length of the first mounting portion 183 in the Y-axis direction is longer than the length of the side light emitting element 40 in the Y-axis direction. Therefore, the first mounting portion 183 includes a first extending portion 183C that is a portion between the first light emitting side surface LS1 and the first end surface 183A of the side light emitting element 40, and a second extending portion 183D that is a portion between the second light emitting side surface LS2 and the second end surface 183B. In this way, it can be said that the first mounting portion 183 (first conductive surface 181) has the first extending portion 183C that is a portion that extends from the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 toward the first sealed end surface 63. The first extending portion 183C includes the first end surface 183A. The second extending portion 183D includes the second end surface 183B.

[0371] A distance DA1 between the first element side surface 43 (first light-emitting side surface LS1) of the side light emitting element 40 and the first end surface 183A of the first mounting portion 183 in the Y-axis direction is greater than a distance DA2 between the second element side surface 44 of the side light emitting element 40 and the second end surface 183B of the first mounting portion 183. Here, the distance DA1 can also be said to be the length of the first extension portion 183C in the Y-axis direction, and the distance DA2 can also be said to be the length of the second extension portion 183D in the Y-axis direction.

[0372] As in the first embodiment, the first light-emitting side surface LS1 of the side light-emitting element 40 faces the same side as the first sealed end surface 63. The laser light emitted from the first light-emitting side surface LS1 of the side light-emitting element 40 is diffused (scattered) by the diffusing material 67. As a result, the laser light includes laser light directed toward the substrate surface 161. The first extension 183C reflects at least a portion of the laser light directed toward the substrate surface 161. The reflected laser light passes through the first sealed end surface 63 or the sealed surface 61 and is emitted to the outside of the semiconductor light-emitting device 10. In this way, it can be said that the semiconductor light-emitting device 10 includes a first reflecting portion 80 that reflects at least a portion of the laser light emitted from the first light-emitting side surface LS1 of the side light-emitting element 40 and directed toward the substrate surface 161. In the eighth embodiment, the first extension 183C of the first mounting portion 183 constitutes the first reflecting portion 80. In other words, it can be said that the first mounting portion 183 has a portion that extends from the first light-emitting side surface LS1 toward the first sealed end surface 63 as the first reflecting portion 80 .

[0373] [Method for Manufacturing Semiconductor Light-Emitting Device] An example of a method for manufacturing the semiconductor light-emitting device 10 of the eighth embodiment will be described with reference to Figures 42 to 45. For convenience, Figures 42 to 45 show a configuration in which four semiconductor light-emitting devices 10 can be manufactured at once, but the present invention is not limited to this, and a configuration in which more semiconductor light-emitting devices 10 can be manufactured at once may also be used.

[0374] The manufacturing method of the semiconductor light emitting device 10 includes the steps of preparing a lead frame 980, forming an insulating substrate 960, mounting the side light emitting element 40 and the top light emitting element 50, forming wires W1 and W2, forming a sealing resin 950, and singulating.

[0375] 42 , in the step of preparing the lead frame 980, the lead frame 980 is prepared, which includes a plurality of first conductive parts 180, a plurality of second conductive parts 190, and a plurality of third conductive parts 200. The lead frame 980 is formed of a material containing, for example, Cu.

[0376] The lead frame 980 includes a plurality of first conductive parts 180 and a plurality of second conductive parts 190. Two first conductive parts 180 adjacent to each other in the X-axis direction are connected to each other by a first suspension lead part 184. Two second conductive parts 190 adjacent to each other in the X-axis direction are connected to each other by a second suspension lead part 194. Two first conductive parts 180 and two second conductive parts 190 adjacent to each other in the Y-axis direction are connected to each other by a first suspension lead part 184, a second suspension lead part 194, and a fourth suspension lead part 981. Two third conductive parts 200 adjacent to each other in the Y-axis direction are connected to each other by a third suspension lead part 204 and a fourth suspension lead part 981. Although not shown, the lead frame 980 has a frame part. The frame part connects the plurality of first conductive parts 180, the plurality of second conductive parts 190, and the plurality of third conductive parts 200. The fourth suspension lead portion 981 extends in the X-axis direction and is connected to the frame portion. The fourth suspension lead portion 981 is disposed in the Y-axis direction between the first suspension lead portion 184 and the second suspension lead portion 194 of the first conductive portion 180 and the second conductive portion 190 that are adjacent in the Y-axis direction, and is connected to both the first suspension lead portion 184 and the second suspension lead portion 194. The fourth suspension lead portion 981 is also disposed in the Y-axis direction between the two third suspension lead portions 204 of the two third conductive portions 200 that are adjacent in the Y-axis direction, and is connected to the two third suspension lead portions 204.

[0377] As shown in FIG. 43 , in the process of forming the insulating substrate 960, the insulating substrate 960 is formed by resin molding so as to be integrated with the lead frame 980. The insulating substrate 960 supports the lead frame 980. The insulating substrate 960 is formed to a size that includes multiple substrates 160 (insulating substrates 160A). The insulating substrate 960 is made of, for example, black epoxy resin. The insulating substrate 960 includes multiple bottom wall portions 971 and multiple side wall portions 972. The number of each of the bottom wall portions 971 and side wall portions 972 is set according to the number of substrates 160 (insulating substrates 160A) in the insulating substrate 960. In the insulating substrate 960, unit side walls are formed by side wall portions 972 that are adjacent in a plan view, surrounding the first mounting portion 183, the second mounting portion 193, and the third mounting portion 203.

[0378] In the process of forming the insulating substrate 960, the lead frame 980 may be attached, for example, with an adhesive to the insulating substrate 960, which is a molded product formed in advance by resin molding such as injection molding. This results in the insulating substrate 960 and the lead frame 980 being integrated together. Furthermore, the insulating substrate 960 is not limited to being made of resin, and may also be made of metal or ceramic. In this case, too, the lead frame 980 may be joined to the pre-formed insulating substrate 960 by an adhesive or metal bonding.

[0379] Furthermore, the order of the manufacturing steps of the semiconductor light-emitting device 10 can be changed as desired. In one example, the step of forming the insulating substrate 960 may be performed after the steps of mounting the side light-emitting element 40 and the top light-emitting element 50 and the step of forming the wires W1 and W2, but before the step of forming the sealing resin 950, or may be performed after the step of forming the wires W1 and W2. In this case, in the step of forming the insulating substrate 960, the lead frame 980 may be attached, for example, with an adhesive, to the insulating substrate 960, which is a molded product formed in advance by resin molding such as injection molding. Thereafter, the step of forming the sealing resin 950 and the step of singulating are performed in order.

[0380] 44 , in the eighth embodiment, the process of mounting the side light emitting element 40 and the top light emitting element 50 includes the steps of mounting the side light emitting element 40 on the first mounting portion 183 of the first conductive portion 180 and mounting the top light emitting element 50 on the second mounting portion 193 of the second conductive portion 190. In this step, the side light emitting element 40 is, for example, die-bonded to the first mounting portion 183, and the top light emitting element 50 is, for example, die-bonded to the second mounting portion 193. This electrically connects the cathode electrode 48 (see FIG. 45 ) of the side light emitting element 40 to the first conductive portion 180, and electrically connects the cathode electrode 55 (see FIG. 45 ) of the top light emitting element 50 to the second conductive portion 190.

[0381] Next, in the process of forming the wires W1 and W2, the wire W1 electrically connects the anode electrode 47 of the side light emitting element 40 to the third mounting portion 203 of the third conductive portion 200, and the wire W2 electrically connects the anode electrode 54 of the top light emitting element 50 to the third mounting portion 203. The wires W1 and W2 are bonding wires formed using a wire bonding apparatus. In the eighth embodiment, the wire W1 is bonded first to the third mounting portion 203, and the wire W2 is bonded second to the anode electrode 47 of the side light emitting element 40. Furthermore, the wire W2 is bonded first to the third mounting portion 203, and the wire W2 is bonded second to the anode electrode 54 of the top light emitting element 50. Alternatively, the wire W1 may be bonded first to the anode electrode 47, and the wire W2 may be bonded second to the third mounting portion 203. Alternatively, the wire W2 may be bonded first to the anode electrode 54, and the wire W2 may be bonded second to the third mounting portion 203.

[0382] 45 , in the step of forming the sealing resin 950, the sealing resin 950 is formed in a space surrounded by an insulating substrate 960 and a unit side wall formed of a plurality of side wall portions 972. It can be said that the side wall portions 972 (unit side walls) surround the sealing resin 950.

[0383] The sealing resin 950 is formed by, for example, resin molding. The sealing resin 950 seals the first mounting portion 183, the second mounting portion 193, the third mounting portion 203, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2. The sealing resin 950 is formed of a light-transmitting material. In one example, the sealing resin 950 is formed of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin. Here, the sealing resin 950 is formed by, for example, transfer molding or compression molding. The sealing resin 950 may be filled into the space surrounded by the bottom wall portion 971 of the insulating substrate 960 and the unit side walls of the side wall portion 972 by potting. The sealing resin 950 includes a diffusion material 67 (see FIG. 45 ).

[0384] Subsequently, in the singulation step, both the side wall portion 972 and the bottom wall portion 971 are cut with a dicing blade along the cutting lines CL in FIG. 44 . This forms the substrate 160 and the sealing resin 60. The side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 that emits laser light emits laser light toward the first sealing end surface 63 of the sealing resin 60. In other words, the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 faces the same side as the first sealing end surface 63. Through the above steps, the semiconductor light emitting device 10 is manufactured.

[0385] [Effects] The semiconductor light emitting device 10 of the eighth embodiment has the following effects. (8-1) The semiconductor light emitting device 10 includes a first conductive portion 180. The insulating substrate 160A is a molded resin that holds the first conductive portion 180. The insulating substrate 160A is integrally formed with a bottom wall portion 171 that holds the first conductive portion 180 and a side wall portion 172 that rises from the bottom wall portion 171 and surrounds the sealing resin 60 in a plan view.

[0386] According to this configuration, the manufacturing steps for the insulating substrate 160A can be reduced compared to a configuration in which the bottom wall portion 171 and the side wall portion 172 are formed separately and then joined together, thereby making it easier to manufacture the substrate 160.

[0387] (8-2) The first conductive surface 181 (first mounting portion 183) of the first conductive portion 180 has a portion that extends from the first light-emitting side surface LS1 of the side light-emitting element 40 toward the first sealing end surface 63 of the sealing resin 60 as the first reflective portion 80.

[0388] According to this configuration, the first reflector 80 can be formed using the first conductive portion 180 without adding any component dedicated to the first reflector 80. Therefore, an increase in the number of components in the semiconductor light emitting device 10 can be suppressed.

[0389] 46 to 48, a semiconductor light emitting device 10 of the ninth embodiment will be described. The semiconductor light emitting device 10 of the ninth embodiment differs from the semiconductor light emitting device 10 of the first embodiment in that a submount substrate is interposed between the side light emitting element 40 and the first wiring 31, and between the top light emitting element 50 and the second wiring 32. Below, differences from the first embodiment will be described in detail, and components common to the components of the semiconductor light emitting device 10 of the first embodiment will be assigned the same reference numerals and will not be described again.

[0390] As shown in Fig. 46 , semiconductor light emitting device 10 includes a first submount substrate 210 and a second submount substrate 220. As shown in Fig. 48 , first submount substrate 210 is interposed between side light emitting element 40 and first wiring 31. First submount substrate 210 electrically connects side light emitting element 40 and first wiring 31. More specifically, first submount substrate 210 electrically connects cathode electrode 48 of side light emitting element 40 and first wiring 31.

[0391] The first submount substrate 210 is formed of a material having a thermal expansion coefficient closer to that of the side light emitting element 40 than that of the first wiring 31. In other words, the difference in thermal expansion coefficient between the first submount substrate 210 and the side light emitting element 40 is smaller than the difference in thermal expansion coefficient between the first wiring 31 and the side light emitting element 40. For example, since the side light emitting element 40 is formed of gallium arsenide (GaAs), the thermal expansion coefficient is 5.4×10 －６ / K. Since the first wiring 31 is made of a material containing Cu, the thermal expansion coefficient is about 16.5×10 －６ / K. Therefore, the first submount substrate 210 has a thermal expansion coefficient of 16.5×10 －６ / K. In one example, the first submount substrate 210 is made of alumina. In this case, the thermal expansion coefficient of the first submount substrate 210 is 7.2×10 －６ / K. The first submount substrate 210 may be made of aluminum nitride. In this case, the thermal expansion coefficient of the first submount substrate 210 is about 4.6×10 －６ / K.

[0392] The first submount substrate 210 is formed in a flat plate shape with its thickness direction in the Z-axis direction. In a plan view, the shape of the first submount substrate 210 is rectangular with its longitudinal direction in the Y-axis direction and its lateral direction in the X-axis direction. In the ninth embodiment, the first submount substrate 210 is formed to be slightly larger than the side light emitting element 40 in a plan view. The shape of the first submount substrate 210 in a plan view can be arbitrarily changed. For example, the shape of the first submount substrate 210 in a plan view may be square. In this case, in a plan view, the length in the X-axis direction of the extension portion of the first submount substrate 210 extending toward the third substrate side surface 25 and the length in the X-axis direction of the extension portion of the first submount substrate 210 extending toward the fourth substrate side surface 26 are longer than the length in the Y-axis direction of the extension portion of the first submount substrate 210 extending toward the first substrate side surface 23 and the length in the Y-axis direction of the extension portion of the first submount substrate 210 extending toward the second substrate side surface 24.

[0393] 47 and 48 , the first submount substrate 210 has a first surface 211, a first back surface 212, and first to fourth side surfaces 213 to 216 connecting the first surface 211 and the first back surface 212. The first surface 211 faces the same side as the substrate surface 21, and the first back surface 212 faces the same side as the substrate back surface 22. The first back surface 212 faces the first wiring 31. The first to fourth side surfaces 213 to 216 are surfaces that intersect with both the first surface 211 and the first back surface 212. In the ninth embodiment, each of the first to fourth side surfaces 213 to 216 is a surface that is perpendicular to the first surface 211 and the first back surface 212. The first side surface 213 and the second side surface 214 constitute both end surfaces of the first submount substrate 210 in the Y-axis direction. The first side surface 213 faces the same side as the first substrate side surface 23, and the second side surface 214 faces the same side as the second substrate side surface 24. The third side surface 215 and the fourth side surface 216 constitute both end surfaces in the X-axis direction of the first submount substrate 210. The third side surface 215 faces the same side as the third substrate side surface 25, and the fourth side surface 216 faces the same side as the fourth substrate side surface 26.

[0394] 48 , the semiconductor light emitting device 10 includes a first surface-side wiring 217 formed on the first surface 211 of the first submount substrate 210, a first back surface-side wiring 218 formed on the first back surface 212, and a first via 219 connecting the first surface-side wiring 217 and the first back surface-side wiring 218. Each of the first surface-side wiring 217 and the first back surface-side wiring 218 is formed of a material containing, for example, Cu. The first via 219 is formed of a material containing, for example, Cu.

[0395] As shown in Fig. 47 , the first front surface side wiring 217 is formed in a rectangular shape that is slightly smaller than the first submount substrate 210 in a plan view. As shown in Fig. 48 , the first back surface side wiring 218 is formed in a rectangular shape that is the same size as the first front surface side wiring 217 in a plan view. As shown in Fig. 47 , for example, a plurality of first vias 219 (eight in the ninth embodiment) are provided. The plurality of first vias 219 are formed in two rows spaced apart in the X axis direction, each row consisting of four first vias 219 arranged in a row spaced apart from each other in the Y axis direction.

[0396] The shape and size of each of the first front surface side wiring 217 and the first back surface side wiring 218 can be changed as desired. In one example, the area of ​​the first front surface side wiring 217 and the area of ​​the first back surface side wiring 218 can be different from each other in a plan view. In addition, the number of first vias 219 can be changed as desired. In one example, there may be one first via 219.

[0397] 48 , the first submount substrate 210 is bonded to the first wiring 31 by the conductive bonding material SD. In other words, the first submount substrate 210 is mounted on the first wiring 31. As a result, the first back surface side wiring 218 is electrically connected to the first wiring 31 via the conductive bonding material SD.

[0398] 47 , in the ninth embodiment, the first submount substrate 210 is disposed in the Y-axis direction closer to the second end face 31B of the first wiring 31. In other words, the distance DB1 between the first submount substrate 210 and the first end face 31A of the first wiring 31 in the Y-axis direction is greater than the distance DB2 between the first submount substrate 210 and the second end face 31B of the first wiring 31 in the Y-axis direction.

[0399] As shown in FIG. 48 , the side light emitting element 40 is mounted on the first submount substrate 210. More specifically, the cathode electrode 48 of the side light emitting element 40 is joined to the first front-surface-side wiring 217 of the first submount substrate 210 by the conductive bonding material SD. This electrically connects the cathode electrode 48 to the first front-surface-side wiring 217. Because the first front-surface-side wiring 217 is electrically connected to the first back-surface-side wiring 218 through the first via 219, the cathode electrode 48 is electrically connected to the first back-surface-side wiring 218. Because the first back-surface-side wiring 218 is electrically connected to the first wiring 31 by the conductive bonding material SD, the cathode electrode 48 is electrically connected to the first wiring 31. In the ninth embodiment, the side light emitting element 40 is disposed at the center of the first submount substrate 210 in the Y-axis direction.

[0400] The second submount substrate 220 is interposed between the top-surface light-emitting element 50 and the second wiring 32. The second submount substrate 220 electrically connects the top-surface light-emitting element 50 and the second wiring 32. More specifically, the second submount substrate 220 electrically connects the cathode electrode 55 of the top-surface light-emitting element 50 and the second wiring 32.

[0401] The second submount substrate 220 is formed of a material having a thermal expansion coefficient closer to that of the top-surface light emitting element 50 than, for example, the second wiring 32. In other words, the difference in thermal expansion coefficient between the second submount substrate 220 and the top-surface light emitting element 50 is smaller than the difference in thermal expansion coefficient between the second wiring 32 and the top-surface light emitting element 50. For example, when a VCSEL is used as the top-surface light emitting element 50, the top-surface light emitting element 50 is made of gallium arsenide (GaAs), and therefore has a thermal expansion coefficient of 5.4×10 －６ When an LED element is used as the top-surface light emitting element 50, the top-surface light emitting element 50 is formed of a Si substrate, and therefore the thermal expansion coefficient is about 4.2×10 －６ / K. Since the second wiring 32 is made of a material containing Cu, the thermal expansion coefficient is about 16.5×10 －６ / K. Therefore, the second submount substrate 220 has a thermal expansion coefficient of 16.5×10 －６ / K. In one example, the second submount substrate 220 is made of alumina. In this case, the thermal expansion coefficient of the second submount substrate 220 is 7.2×10 －６ / K. The second submount substrate 220 may be made of aluminum nitride. In this case, the thermal expansion coefficient of the second submount substrate 220 is about 4.6×10 －６ / K.

[0402] The second submount substrate 220 is formed in a flat plate shape with its thickness direction in the Z-axis direction. The shape of the second submount substrate 220 in plan view is square. In the ninth embodiment, the second submount substrate 220 is formed to be slightly larger than the top-surface light-emitting element 50 in plan view. Note that the shape of the second submount substrate 220 in plan view can be changed as desired.

[0403] The thickness of the second submount substrate 220 is, for example, equal to the thickness of the first submount substrate 210. Note that the thickness of the second submount substrate 220 can be changed as desired. For example, the thickness of the second submount substrate 220 may be thinner than the thickness of the first submount substrate 210. For another example, the thickness of the second submount substrate 220 may be thicker than the thickness of the first submount substrate 210.

[0404] 47 and 48 , the second submount substrate 220 has a second front surface 221, a second rear surface 222, and first to fourth side surfaces 223 to 226 connecting the second front surface 221 and the second rear surface 222. The second front surface 221 faces the same side as the substrate front surface 21, and the second rear surface 222 faces the same side as the substrate rear surface 22. The second rear surface 222 faces the first wiring 31. The first to fourth side surfaces 223 to 226 are surfaces that intersect with both the second front surface 221 and the second rear surface 222. In the ninth embodiment, each of the first to fourth side surfaces 223 to 226 is a surface that is perpendicular to the second front surface 221 and the second rear surface 222. The first side surface 223 and the second side surface 224 constitute both end surfaces of the second submount substrate 220 in the Y-axis direction. The first side surface 223 faces the same side as the first substrate side surface 23, and the second side surface 224 faces the same side as the second substrate side surface 24. The third side surface 225 and the fourth side surface 226 constitute both end surfaces in the X-axis direction of the second submount substrate 220. The third side surface 225 faces the same side as the third substrate side surface 25, and the fourth side surface 226 faces the same side as the fourth substrate side surface 26.

[0405] 48 , the semiconductor light emitting device 10 includes second surface-side wiring 227 formed on the second surface 221 of the second submount substrate 220, second back surface-side wiring 228 formed on the second back surface 222, and second vias 229 connecting the second surface-side wiring 227 and the second back surface-side wiring 228. Each of the second surface-side wiring 227 and the second back surface-side wiring 228 is formed of a material containing, for example, Cu. The second vias 229 are formed of a material containing, for example, Cu.

[0406] As shown in Fig. 47 , the second surface-side wiring 227 is formed in a rectangular shape that is slightly smaller than the second submount substrate 220 in a plan view. As shown in Fig. 48 , the second back surface-side wiring 228 is formed in a rectangular shape that is the same size as the second surface-side wiring 227 in a plan view. As shown in Fig. 47 , for example, a plurality of second vias 229 (six in the ninth embodiment) are provided. The plurality of second vias 229 are formed in two rows spaced apart in the X-axis direction, each row consisting of three second vias 229 arranged in a row spaced apart from each other in the Y-axis direction.

[0407] The shape and size of each of the second front surface side wiring 227 and the second back surface side wiring 228 can be changed as desired. In one example, the area of ​​the second front surface side wiring 227 and the area of ​​the second back surface side wiring 228 can be different from each other in a plan view. In addition, the number of second vias 229 can be changed as desired. In one example, there may be only one second via 229.

[0408] The second submount substrate 220 is bonded to the second wiring 32 by the conductive bonding material SD. That is, the second submount substrate 220 is mounted on the second wiring 32. In the ninth embodiment, the top-surface light emitting element 50 is disposed at the center of the second submount substrate 220 in both the X-axis direction and the Y-axis direction.

[0409] 48 , the top-surface light emitting element 50 is mounted on the second submount substrate 220. More specifically, the cathode electrode 55 of the top-surface light emitting element 50 is bonded to the second surface-side wiring 227 of the second submount substrate 220 by the conductive bonding material SD. This electrically connects the cathode electrode 55 to the second surface-side wiring 227. Because the second surface-side wiring 227 is electrically connected to the second back-side wiring 228 through the second via 229, the cathode electrode 55 is electrically connected to the second back-side wiring 228. Because the second back-side wiring 228 is electrically connected to the second wiring 32 by the conductive bonding material SD, the cathode electrode 55 is electrically connected to the second wiring 32.

[0410] The first submount substrate 210, the side light emitting element 40, the second submount substrate 220, the top light emitting element 50, and the wires W1 and W2 are sealed with sealing resin 60. A first side surface 213 of the first submount substrate 210 is disposed inward (closer to the side light emitting element 40) than a first sealing end surface 63 of the sealing resin 60.

[0411] In the ninth embodiment, the semiconductor light emitting device 10 does not include the first reflector 80 (see FIG. 5 ). That is, the laser light emitted from the first light emitting side surface LS1 of the side light emitting element 40 is emitted from the first sealing end surface 63 and the sealing surface 61 via the sealing resin 60.

[0412] [Effects] The semiconductor light emitting device 10 of the ninth embodiment has the following effects: (9-1) The semiconductor light emitting device 10 further includes a first submount substrate 210 that is interposed between the first wiring 31 and the side light emitting element 40 and electrically connects the first wiring 31 and the side light emitting element 40. The first submount substrate 210 is formed of a material that has a thermal expansion coefficient closer to that of the side light emitting element 40 than the first wiring 31.

[0413] This configuration can reduce the force applied to side light emitting element 40 due to the difference in thermal expansion coefficient between first wiring 31 and side light emitting element 40. Therefore, it is possible to reduce the influence on the electrical characteristics of side light emitting element 40 due to temperature changes.

[0414] (9-2) The semiconductor light emitting device 10 further includes a second submount substrate 220 that is interposed between the second wiring 32 and the top-surface light emitting element 50 and electrically connects the second wiring 32 and the top-surface light emitting element 50. The second submount substrate 220 is formed of a material that has a thermal expansion coefficient closer to that of the top-surface light emitting element 50 than the second wiring 32.

[0415] This configuration can reduce the force applied to the top-surface light emitting element 50 due to the difference in thermal expansion coefficient between the second wiring 32 and the top-surface light emitting element 50. Therefore, it is possible to reduce the influence on the electrical characteristics of the top-surface light emitting element 50 due to temperature changes.

[0416] (9-3) The distance DB1 between the first submount substrate 210 and the first end face 31A of the first wiring 31 in the Y-axis direction is greater than the distance DB2 between the first submount substrate 210 and the second end face 31B of the first wiring 31 in the Y-axis direction.

[0417] With this configuration, the side light emitting element 40 can be spaced further away from the first sealing end surface 63. As a result, the light emitted from the first light-emitting side surface LS1 of the side light emitting element 40 is more likely to be diffused (scattered) by the diffusing material 67 within the sealing resin 60. Therefore, the light emitted from the semiconductor light emitting device 10 has a wider directivity.

[0418] 49 and 50 , a semiconductor light emitting device 10 of the tenth embodiment will be described. The semiconductor light emitting device 10 of the tenth embodiment differs from the semiconductor light emitting device 10 of the first embodiment in that a diffuser 300 is added. Below, differences from the first embodiment will be described in detail, and components common to the components of the semiconductor light emitting device 10 of the first embodiment will be assigned the same reference numerals and will not be described again.

[0419] As shown in Figures 49 and 50 , the semiconductor light emitting device 10 includes a diffuser 300. The diffuser 300 serves to widen the beam angle by diffusing light emitted from the top-surface light emitting element 50. The diffuser 300 is disposed on the sealing surface 61 of the sealing resin 60. In the tenth embodiment, the diffuser 300 is provided partially on the sealing surface 61. In a plan view, the diffuser 300 is provided so as to cover the top-surface light emitting element 50. The size of the diffuser 300 can be changed as desired. In one example, the diffuser 300 may be formed over the entire sealing surface 61.

[0420] [Effects] The semiconductor light emitting device 10 of the tenth embodiment provides the following effects: (10-1) The semiconductor light emitting device 10 further includes the diffuser 300 that diffuses the light of the top light emitting element 50 .

[0421] With this configuration, the light emitted from the upper light-emitting surface 53 of the top-surface light-emitting element 50 is diffused as it passes through the diffuser 300, so that the light emitted from the semiconductor light-emitting device 10 has a wider directivity.

[0422] <Modifications> The above-described embodiments can be modified as follows. Furthermore, the above-described embodiments and the following modifications can be combined with each other to the extent that no technical contradiction occurs. In the planar structure of the semiconductor light-emitting device 10 of the following modifications, the diffusing material 67 in the sealing resin 60 is omitted to make the drawings easier to understand.

[0423] Combination of First to Tenth Embodiments The semiconductor light emitting devices 10 of the first to ninth embodiments may include the diffuser 300 of the tenth embodiment.

[0424] The semiconductor light emitting devices 10 of the first to eighth and tenth embodiments may further include at least one of the first submount substrate 210 and the second submount substrate 220 of the ninth embodiment.

[0425] [Modification o...

Claims

1. a substrate having a substrate surface; a side light emitting element provided on the surface of the substrate and having a light emitting side surface that emits light; a top light emitting device provided on the surface of the substrate and having a light emitting top surface that emits light; Equipped with the side light emitting element is arranged with the light emitting side surface facing a direction intersecting a thickness direction of the substrate, The top light emitting element is disposed with the top light emitting surface facing in the thickness direction of the substrate. Semiconductor light emitting device.

2. The side light emitting element has, as the light emitting side surface, a first light emitting side surface facing a first direction intersecting with the thickness direction of the substrate, and a second light emitting side surface facing a second direction opposite to the first direction. The semiconductor light emitting device according to claim 1 .

3. The top light emitting element is disposed at a position facing the second light emitting side surface while being spaced apart from the side light emitting element in the second direction. The semiconductor light emitting device according to claim 2 .

4. The top light emitting element is disposed in a state spaced apart from the side light emitting element in a direction intersecting the first direction when viewed from a thickness direction of the substrate. The semiconductor light emitting device according to claim 2 .

5. The side light emitting device is a first side light emitting element having a first light emitting side surface and a second light emitting side surface as the light emitting side surface; A third light emitting element is provided separately from the first light emitting element and serves as the light emitting side. a second side light emitting element having a light emitting side surface and a fourth light emitting side surface; Includes The semiconductor light emitting device according to claim 1 .

6. The first side light emitting element and the second side light emitting element are arranged side by side with the second light emitting side surface and the third light emitting side surface facing each other with a gap therebetween, as viewed in a thickness direction of the substrate. The semiconductor light emitting device according to claim 5 .

7. the first side light emitting element is disposed so as to emit light from the first light emitting side surface in a first direction intersecting a thickness direction of the substrate, the second side light emitting element is disposed to emit light from the fourth light emitting side surface in a second direction opposite to the first direction, The top light emitting element is disposed between the second light emitting side surface and the third light emitting side surface when viewed from a direction perpendicular to both the thickness direction of the substrate and the first direction. The semiconductor light emitting device according to claim 6 .

8. a first inner reflecting portion provided between the second light-emitting side surface and the top light-emitting element when viewed from a direction perpendicular to both the thickness direction of the substrate and the first direction, the first inner reflecting portion reflecting at least a portion of the light emitted from the second light-emitting side surface; a second inner reflecting portion provided between the third light-emitting side surface and the top light-emitting element when viewed from a direction perpendicular to both the thickness direction of the substrate and the first direction, the second inner reflecting portion reflecting at least a part of the light emitted from the third light-emitting side surface. The semiconductor light emitting device according to claim 7 .

9. the first side light emitting element is disposed so as to emit light from the first light emitting side surface in a first direction intersecting a thickness direction of the substrate, The top light emitting device is configured to have a thickness in both the thickness direction of the substrate and the first direction. the first side light emitting element and the second side light emitting element are disposed between the first side light emitting element and the second side light emitting element when viewed from a direction perpendicular to the first side light emitting element, The first side light emitting element and the second side light emitting element are arranged such that a direction in which the first light emitting side surface faces and a direction in which the third light emitting side surface faces intersect with each other when viewed from a thickness direction of the substrate. The semiconductor light emitting device according to claim 6 .

10. the top light emitting element is disposed so as to face the second light emitting side surface, a reflecting portion provided between the second light-emitting side surface and the top light-emitting element when viewed from a direction perpendicular to both the thickness direction of the substrate and the first direction, the reflecting portion reflecting at least a part of the light emitted from the second light-emitting side surface. The semiconductor light emitting device according to claim 9 .

11. The side light emitting element is provided in plurality, The plurality of side light emitting elements are arranged around the top light emitting element such that the light emitting side surfaces of the side light emitting elements face in different directions. The semiconductor light emitting device according to claim 1 .

12. The plurality of side light emitting elements include a first side light emitting element having a first light emitting side surface and a second light emitting side surface; a second side light emitting element having a third light emitting side surface and a fourth light emitting side surface; a third side light emitting element having a fifth light emitting side surface and a sixth light emitting side surface; a fourth side light emitting element having a seventh light emitting side surface and an eighth light emitting side surface; Including, the first side light emitting element is disposed to emit light from the first light emitting side surface in a first direction intersecting a thickness direction of the substrate, the second side light emitting element is disposed so as to emit light from the fourth light emitting side surface in a second direction that is a direction intersecting a thickness direction of the substrate and different from the first direction, the third side light emitting element is disposed so as to emit light from the fifth light emitting side surface in a third direction that is a direction intersecting a thickness direction of the substrate and different from both the first direction and the second direction, The fourth side light emitting element is disposed so as to emit light from the eighth light emitting side surface in a fourth direction that intersects with a thickness direction of the substrate and is different from each of the first direction, the second direction, and the third direction. The semiconductor light emitting device according to claim 11.

13. the side light emitting element is an edge emitting laser element, The top light emitting element is a surface emitting laser element or an LED element. The semiconductor light emitting device according to claim 1 .

14. The light-emitting element further includes a light-transmitting sealing resin that seals both the side light-emitting element and the top light-emitting element. The semiconductor light emitting device according to claim 1 .

15. The sealing resin includes a diffusing material that diffuses light. The semiconductor light emitting device according to claim 14.

16. The sealing resin is surrounded by a side wall having an opening through which the light-emitting side surface is exposed. The semiconductor light emitting device according to claim 14.

17. The top light emitting element further includes a diffuser for diffusing the light. The semiconductor light emitting device according to claim 1 .