Sensor embedded display panel and electronic device

Abstract

A sensor-embedded display panel according to one embodiment comprises a substrate, a light-emitting element located on the substrate and including a light-emitting layer, and a photoelectric element located on the substrate and including an absorption layer arranged parallel to the light-emitting layer along the plane direction of the substrate, wherein the light-emitting element and the photoelectric element comprise a first common auxiliary layer located above the light-emitting layer and the absorption layer and a second common auxiliary layer located below the light-emitting layer and the absorption layer, and the photoelectric element further comprises an auxiliary layer having a thickness corresponding to any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum.

Description

Technology Field

[0001] This relates to sensor-embedded display panels and electronic devices. Background Technology

[0002] Recently, there has been an increasing demand for display devices implementing biometric recognition technology, which authenticates individuals by extracting specific human biological information or behavioral characteristics using automated devices, particularly in sectors such as finance, healthcare, and mobile technology.

[0003] Accordingly, research and development are underway on technology to integrate biometric sensors into the display panel, which occupies the largest area of ​​the display device. The biometric sensor integrated into the display panel can acquire touch input, fingerprint input, images, etc. The problem to be solved

[0004] These sensors can be placed at the bottom of the display panel or manufactured as separate modules and mounted on the outside of the display panel. However, if the sensor is placed at the bottom of the display panel, performance may be degraded because it must recognize objects by passing through the display panel, various films and / or components, etc., and if the sensor is manufactured as a separate module and mounted, there are limitations in terms of design and usability.

[0005] The embodiments provide a sensor-embedded display panel that includes a sensor that can be integrated with the display panel to improve performance.

[0006] The embodiments provide a sensor-embedded display panel including a sensor that is easy to manufacture. means of solving the problem

[0007] A sensor-embedded display panel according to one embodiment comprises a substrate, a light-emitting element located on the substrate and including a light-emitting layer, and a photoelectric element located on the substrate and including an absorption layer arranged parallel to the light-emitting layer along the plane direction of the substrate, wherein the light-emitting element and the photoelectric element comprise a first common auxiliary layer located above the light-emitting layer and the absorption layer and a second common auxiliary layer located below the light-emitting layer and the absorption layer, and the photoelectric element further comprises an auxiliary layer having a thickness corresponding to any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum.

[0008] The absorption layer can absorb light of a combination of the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum.

[0009] The auxiliary layer can be located between the first common auxiliary layer and the light-absorbing layer.

[0010] The auxiliary layer can be located between the second common auxiliary layer and the light-absorbing layer.

[0011] The photoelectric element may include a first sensor pixel that converts light of a red wavelength spectrum into an electrical signal, a second sensor pixel that converts light of a green wavelength spectrum into an electrical signal, and a third sensor pixel that converts light of a blue wavelength spectrum into an electrical signal.

[0012] The thickness of each of the auxiliary layers of the first sensor pixel, the second sensor pixel, and the third sensor pixel may be different from each other.

[0013] The photoelectric device may further include a color filter that transmits light of a wavelength spectrum corresponding to the auxiliary layer.

[0014] The light-emitting element and the photoelectric element each further include a common electrode that applies a common voltage to the light-emitting element and the photoelectric element, and a pixel electrode facing the common electrode, and the first common auxiliary layer may be located below the common electrode, and the second common auxiliary layer may be located on the pixel electrode.

[0015] The sensor-embedded display panel includes a display area for displaying an image and a non-display area excluding the display area, and the light absorption sensor may be located in the non-display area.

[0016] It further includes a plurality of first subpixels displaying red and including a first light-emitting element, a plurality of second subpixels displaying green and including a second light-emitting element, and a plurality of third subpixels displaying blue and including a third light-emitting element, and the plurality of first subpixels, a plurality of second subpixels, and a plurality of third subpixels may be located in a display area.

[0017] The photoelectric element may be located between at least two selected from the first subpixel, the second subpixel, and the third subpixel.

[0018] It further includes a plurality of fourth subpixels including a fourth light-emitting element that emits light of an infrared wavelength spectrum, and the photoelectric element can further absorb light of an infrared wavelength spectrum.

[0019] The light-absorbing layer may contain organic materials.

[0020] The light-emitting layer may include organic light-emitting materials, quantum dots, perovskites, or a combination thereof.

[0021] An image sensor according to one embodiment comprises a substrate and a photoelectric element including an absorption layer located on the substrate and absorbing light of a combination of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, wherein the photoelectric element includes a first common auxiliary layer located above the absorption layer, a second common auxiliary layer located below the absorption layer, and an auxiliary layer having a thickness corresponding to any one of the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum.

[0022] The auxiliary layer can be located between the first common auxiliary layer and the light-absorbing layer.

[0023] The auxiliary layer can be located between the second common auxiliary layer and the light-absorbing layer.

[0024] An image sensor comprising a first sensor pixel that converts light of a red wavelength spectrum into an electrical signal, a second sensor pixel that converts light of a green wavelength spectrum into an electrical signal, and a third sensor pixel that converts light of a blue wavelength spectrum into an electrical signal, wherein the thickness of the auxiliary layer of each of the first sensor pixel, the second sensor pixel, and the third sensor pixel is different from each other.

[0025] The photoelectric device may further include a color filter that transmits light of a wavelength spectrum corresponding to the auxiliary layer.

[0026] A display device according to one embodiment includes the sensor-embedded display panel described above. Effects of the invention

[0027] According to the embodiments, there is an advantage in that a high-performance sensor can be provided while improving design and usability by being integrated with a display panel.

[0028] According to the embodiments, there is an advantage in that a thin display device can be provided. Brief explanation of the drawing

[0029] FIG. 1 is a plan view of a sensor-embedded display panel according to one embodiment. FIG. 2 is a cross-sectional view showing an example of a sensor-embedded display panel according to one embodiment. FIG. 3 is a cross-sectional view showing another example of a sensor-embedded display panel according to one embodiment. FIG. 4 is a plan view of a sensor-embedded display panel according to another embodiment. FIG. 5 is a cross-sectional view showing an example of a sensor-embedded display panel according to another embodiment. Figure 6 is a graph showing the absorption rate of the image sensor of Figure 5 according to wavelength. FIG. 7 is a cross-sectional view showing another example of a sensor-embedded display panel according to another embodiment. Figure 8 is a graph showing the absorption rate of the image sensor of Figure 7 according to wavelength. FIG. 9 is a schematic diagram illustrating an example of a smartphone as an electronic device according to one example. FIG. 10 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to one embodiment. Specific details for implementing the invention

[0030] The following embodiments are described in detail so that those skilled in the art can easily implement them. However, the structure actually applied may be implemented in various different forms and is not limited to the embodiments described herein.

[0031] In the drawing, the thickness is enlarged to clearly represent various layers and regions. When a part such as a layer, film, region, or plate is described as being "on" another part, this includes not only the case where it is "immediately on" another part, but also the case where there is another part in between. Conversely, when a part is described as being "immediately on" another part, it means that there is no other part in between.

[0032] Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings.

[0033] Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0034] Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side.

[0035] To clearly explain the embodiments shown in the drawings, parts unrelated to the description have been omitted, and the same reference numerals have been used for identical or similar components throughout the specification.

[0036] In the following, the terms 'lower' and 'upper' are used merely for convenience of explanation and do not limit positional relationships.

[0037] Unless otherwise defined below, "substituted" means that a hydrogen atom in a compound is a halogen, hydroxyl group, nitro group, cyano group, amino group, azido group, amidino group, hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid or its salt, C1 to C30 alkyl group, C2 to C30 alkenyl group, C2 to C30 alkynyl group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heterocyclic group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to C15 cycloalkynyl group, C3 to It means substituted with a C30 heterocycloalkyl group and a substituent selected from combinations thereof.

[0038] In addition, unless otherwise defined below, 'hetero' means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si, and P.

[0039] In the following, unless otherwise defined, the energy level is the highest occupied molecular orbital (HOMO) energy level or the lowest unoccupied molecular orbital (LUMO) energy level.

[0040] In the following, unless otherwise defined, work functions or energy levels are expressed as absolute values ​​from the vacuum level. Furthermore, a work function or energy level being deep, high, or large means that the absolute value is large with the vacuum level set to '0 eV', and a work function or energy level being shallow, low, or small means that the absolute value is small with the vacuum level set to '0 eV'. Additionally, the difference between the work function and / or energy levels may be the difference between the larger absolute value and the smaller absolute value.

[0041] Unless otherwise defined below, HOMO energy levels can be evaluated as the amount of photoelectrons emitted according to energy by irradiating a thin film with UV light using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.).

[0042] Unless otherwise defined below, LUMO energy levels can be obtained by obtaining an energy band gap using a UV-Vis spectrometer (Shimadzu Corporation) and then calculating the LUMO energy levels from the energy band gap and the already measured HOMO energy levels.

[0043] A sensor embedded display panel according to one embodiment is described below.

[0044] A sensor-embedded display panel according to one embodiment may be a display panel capable of performing a display function and an image acquisition function (e.g., a biometric recognition function), and may be an in-cell type display panel in which a sensor that performs an image acquisition function (e.g., a biometric recognition function) is embedded within the display panel.

[0045] FIG. 1 is a plan view showing an example of a sensor-embedded display panel according to one embodiment, and FIG. 2 is a cross-sectional view showing an example of a sensor-embedded display panel according to one embodiment.

[0046] Referring to FIGS. 1 and 2, a sensor-embedded display panel (1000) according to one embodiment includes a plurality of subpixels (PX) that display different colors. The plurality of subpixels (PX) may display at least three primary colors and include a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different first, second, and third colors selected from red, green, and blue, respectively. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, and the first subpixel (PX1) may be a red subpixel displaying red (R), the second subpixel (PX2) may be a green subpixel displaying green (G), and the third subpixel (PX3) may be a blue subpixel displaying blue (B). However, it is not limited thereto and may further include auxiliary subpixels (not shown), such as a white subpixel.

[0047] Multiple subpixels (PX) may form a single unit pixel (UP) and be repeatedly arranged along rows and / or columns. In FIG. 1, a structure comprising one first subpixel (PX1), two second subpixels (PX2), and one third subpixel (PX3) in a unit pixel (UP) is illustrated as an example, but is not limited thereto and may include at least one first subpixel (PX1), at least one second subpixel (PX2), and at least one third subpixel (PX3). In the figure, as an example, an arrangement of subpixels (PX) is illustrated in which a first column in which the first subpixel (PX1) and the third subpixel (PX3) are alternately arranged in the column direction and a second column in which the second subpixel (PX2) is arranged in the column direction are alternately arranged in the row direction, but is not limited thereto and the arrangement of subpixels (PX) may vary. The area occupied by multiple subpixels (PX) and the area displaying color by the multiple subpixels (PX) may be a display area (DA) for displaying an image.

[0048] The first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may each include a light-emitting element. For example, the first subpixel (PX1) may include a first light-emitting element (210) capable of emitting light of a wavelength spectrum of a first color, the second subpixel (PX2) may include a second light-emitting element (220) capable of emitting light of a wavelength spectrum of a second color, and the third subpixel (PX3) may include a third light-emitting element (230) capable of emitting light of a wavelength spectrum of a third color. However, not limited thereto, at least one of the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may include a light-emitting element that emits light of a combination of the first color, the second color, and the third color, i.e., a white wavelength spectrum, and may display the first color, the second color, or the third color through a color filter (not shown).

[0049] Additionally, the sensor-embedded display panel (1000) may include a fourth light-emitting element (not shown) that emits light of an infrared wavelength spectrum. For example, the fourth light-emitting element may be included in a subpixel of any one of the unit pixels (UP) or may be located in a non-display area (NDA). The fourth subpixel may form a unit pixel (UP) together with the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3), and the unit pixels (UP) may be arranged repeatedly along rows and / or columns.

[0050] A sensor-embedded display panel (1000) according to one embodiment has an image sensor. The image sensor includes a plurality of sensor pixels (SPX). The plurality of sensor pixels (SPX) may be placed in a non-display area (NDA). The non-display area (NDA) is an area other than the display area (DA) and may be an area where light-emitting elements, such as a first sub-pixel (PX1), a second sub-pixel (PX2), a third sub-pixel (PX3), and an auxiliary sub-pixel, are not placed. The sensor pixels (SPX) may be placed between at least two selected from the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3).

[0051] The sensor pixel (SPX) may include a photoelectric element (300). The photoelectric element (300) may be arranged in parallel with the first, second, and third light-emitting elements (210, 220, 230) placed in the display area (DA).

[0052] The image sensor may be an optical type sensor (e.g., a biometric sensor). For example, the image sensor may be a fingerprint sensor, an ambient light sensor, an iris sensor, a distance sensor, a blood vessel distribution sensor, and / or a heart rate sensor, but is not limited thereto.

[0053] For example, the photoelectric element (300) can convert light emitted from at least one of the first, second, and third light-emitting elements (210, 220, 230) placed in the display area (DA) into an electrical signal by absorbing light reflected by a recognition target (40), such as a biological object, tool, or object. Here, the biological object may be a finger, fingerprint, palm, iris, face and / or wrist, etc., but is not limited thereto.

[0054] The photoelectric element (300) may be placed on the same plane as the first, second, and third light-emitting elements (210, 220, 230) on the substrate (110) and may be embedded within the display panel (1000).

[0055] Although it was described above that the sensor pixel (SPX) is located in the non-display area (NDA), the sensor pixel (SPX) may be located in at least one of the areas where the subpixels (PX1, PX2, PX3) are located within the display area (DA). For example, one first subpixel (PX1), one second subpixel (PX2), one third subpixel (PX3), and one sensor pixel (SPX) may form one unit pixel (UP).

[0056] Referring to FIG. 2, the sensor-embedded display panel (1000) includes a substrate (110), a thin-film transistor (120) formed on the substrate (110), an insulating layer (140) formed on the thin-film transistor (120), a pixel defining layer (150) formed on the insulating layer (140), and first, second, or third light-emitting elements (210, 220, 230) and photoelectric elements (300) located in a space partitioned by the pixel defining layer (150).

[0057] The substrate (110) may be a light-transmitting substrate, for example, a glass substrate or a polymer substrate. The polymer substrate may include, for example, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, polyorganosiloxane, styrene-ethylene-butylene-styrene, polyurethane, polyacrylic, polyolefin, or a combination thereof, but is not limited thereto.

[0058] A plurality of thin-film transistors (120) are formed on a substrate (110). At least one thin-film transistor (120) may be included for each subpixel (PX). For example, each subpixel (PX) may include at least one switching thin-film transistor and / or at least one driving thin-film transistor. The substrate (110) on which the thin-film transistors (120) are formed may be called a thin-film transistor substrate (TFT substrate) or a thin-film transistor backplane (TFT backplane).

[0059] The insulating layer (140) may cover the substrate (110) and the thin-film transistor (120) and may be located on the front surface of the substrate (110). The insulating layer (140) may be a planarization film or a passivation film and may include an organic insulating material, an inorganic insulating material, an organic-inorganic insulating material, or a combination thereof. The insulating layer (140) may have a plurality of contact holes (141) for connecting the first, second, and third light-emitting elements (210, 220, 230) and the thin-film transistor (120), and a plurality of contact holes (142) for electrically connecting the photoelectric element (300) and the thin-film transistor (120).

[0060] A pixel definition layer (150) may also be formed on the front surface of the substrate (110) and may be positioned between adjacent subpixels (PX) to partition each subpixel (PX). The pixel definition layer (150) may have a plurality of openings (151) located in each subpixel (PX), and any one of the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) may be located in each opening (151).

[0061] The first, second, and third light-emitting elements (210, 220, 230) are formed on a substrate (110) (or a thin-film transistor substrate) and are repeatedly arranged along the plane direction (e.g., xy direction) of the substrate (110). As described above, the first, second, and third light-emitting elements (210, 220, 230) may each be included in a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3), and the first, second, and third light-emitting elements (210, 220, 230) may be electrically connected to separate thin-film transistors (120) and driven independently.

[0062] The first, second, and third light-emitting elements (210, 220, 230) can each independently emit light selected from a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and a combination thereof. For example, the first light-emitting element (210) can emit light of the red wavelength spectrum, the second light-emitting element (220) can emit light of the green wavelength spectrum, and the third light-emitting element (230) can emit light of the blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum each have a maximum emission wavelength (λ) at approximately 600 nm or more and less than 750 nm, approximately 500 nm to 600 nm, and approximately 400 nm or more and less than 500 nm, respectively. max Can have ).

[0063] The first, second, and third light-emitting elements (210, 220, 230) may be light-emitting diodes, and for example, may be organic light-emitting diodes containing organic materials.

[0064] The photoelectric element (300) is formed on the substrate (110) (or thin-film transistor substrate) and may be arranged randomly or regularly along the plane direction (e.g., xy direction) of the substrate (110). As described above, the sensor pixel (SPX) containing the photoelectric element (300) may be located in the non-display area (NDA).

[0065] The photoelectric element (300) can be connected to a separate thin-film transistor (120) and driven independently. The photoelectric element (300) can absorb light of the same wavelength spectrum as the light emitted from at least one of the first, second, and third light-emitting elements (210, 220, 230) and convert it into an electrical signal, for example, it can absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and combinations thereof and convert it into an electrical signal. The photoelectric element (300) can be, for example, a photoelectric diode, and for example, an organic photoelectric diode containing an organic material.

[0066] For example, the sensor pixel (SPX) may have a photoelectric element (300) that absorbs light of a green wavelength spectrum and converts it into an electrical signal, and may be located adjacent to a second subpixel (PX2) that includes a second light-emitting element (220).

[0067] Each of the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) includes a pixel electrode (211, 221, 231, 310), a common electrode (320) facing the pixel electrode (211, 221, 231, 310) to which a common voltage is applied, a light-emitting layer (212, 222, 232) or light-absorbing layer (330) located between the pixel electrode (211, 221, 231, 310) and the common electrode (320), a first common auxiliary layer (340), and a second common auxiliary layer (350).

[0068] The first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) are arranged side by side along the plane direction (e.g., xy direction) of the substrate (110) and may share a common electrode (320), a first common auxiliary layer (340), and a second common auxiliary layer (350) formed on the front surface.

[0069] The common electrode (320) is formed continuously on the upper surface of the light-emitting layer (212, 222, 232) and the light-absorbing layer (330), and is substantially formed on the front surface of the substrate (110). The common electrode (320) can apply a common voltage to the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300).

[0070] The first common auxiliary layer (340) is located between the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) and the common electrode (320), and can be located continuously above the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) and below the common electrode (320).

[0071] The first common auxiliary layer (340) may be a charge auxiliary layer (e.g., an electron auxiliary layer) that facilitates the injection and / or movement of charge (e.g., electrons) from the common electrode (320) to the light-emitting layer (212, 222, 232). For example, the LUMO energy level of the first common auxiliary layer (340) may be located between the LUMO energy level of the light-emitting layer (212, 222, 232) and the work function of the common electrode (320), and the work function of the common electrode (320), the LUMO energy level of the first common auxiliary layer (340), and the LUMO energy level of the light-emitting layer (212, 222, 232) may be shallow in sequence. On the other hand, the LUMO energy level of the first common auxiliary layer (340) may be shallower than the LUMO energy level of the absorption layer (330) and the work function of the common electrode (320), respectively.

[0072] The first common auxiliary layer (340) may include an organic, inorganic, organic-inorganic, or combination thereof satisfying the LUMO energy level, such as a metal halide such as LiF, NaCl, CsF, RbCl, and RbI, a lanthanide metal such as Yb, a metal oxide such as Li2O and BaO, Liq (Lithium quinolate), Alq3 (Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl-1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2-yl)anthracene), BmPyPhB(1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene) or a combination thereof, but is not limited thereto.The first common auxiliary floor (340) may be one floor or two or more floors.

[0073] The second common auxiliary layer (350) is located between the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) and the substrate (110), and in particular, it may be located between the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) and the pixel electrode (211, 221, 231, 310). The second common auxiliary layer (350) may be located continuously below the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) and above the pixel electrode (211, 221, 231, 310).

[0074] The second common auxiliary layer (350) may be a charge auxiliary layer (e.g., a hole auxiliary layer) that facilitates the injection and / or movement of charge (e.g., a hole) from the pixel electrodes (211, 221, 231) to the light-emitting layer (212, 222, 232). For example, the HOMO energy level of the second common auxiliary layer (350) may be located between the HOMO energy level of the light-emitting layer (212, 222, 232) and the work function of the pixel electrodes (211, 221, 231), and the work function of the pixel electrodes (211, 221, 231), the HOMO energy level of the second common auxiliary layer (350), and the HOMO energy level of the light-emitting layer (212, 222, 232) may be progressively deeper.

[0075] The second common auxiliary layer (350) may include an organic, inorganic, organic-inorganic, or combination thereof that satisfies the HOMO energy level, such as a phthalocyanine compound such as copper phthalocyanine, DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA (4,4',4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA (4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA (4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS (Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), PANI / DBSA (Polyaniline / Dodecylbenzenesulfonic acid), PANI / CSA (Polyaniline / Camphor sulfonic acid), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), polyetherketone containing triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f: 2',3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile), carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorine derivatives, TPD(N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA(4,It may be a triphenylamine derivative such as 4',4"-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC (4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD (4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto. The second common auxiliary layer (350) may be one layer or two or more layers.

[0076] The auxiliary layer (360) may be located between the light-absorbing layer (330) and the second common auxiliary layer (350) and / or between the first common auxiliary layer (340) and the light-absorbing layer (330).

[0077] When the auxiliary layer (360) is located between the light-absorbing layer (330) and the second common auxiliary layer (350), the auxiliary layer (360) may be a charge auxiliary layer (e.g., a hole auxiliary layer) that facilitates the injection and / or movement of charge (e.g., a hole) from the pixel electrode (310) to the light-absorbing layer (330). For example, the auxiliary layer (360) may include the same material as the second common auxiliary layer (350). Additionally, the auxiliary layer (360) may be formed in the same manufacturing process as part of the second common auxiliary layer (350).

[0078] Additionally, when the auxiliary layer (360) is located between the first common auxiliary layer (340) and the light absorption layer (330), the auxiliary layer (360) may be a charge auxiliary layer (e.g., an electron auxiliary layer) that facilitates the injection and / or transfer of charge (e.g., electrons) from the common electrode (320) to the light absorption layer (330). For example, the auxiliary layer (360) may include the same material as the first common auxiliary layer (340). Additionally, the auxiliary layer (360) may be formed in the same manufacturing process as part of the first common auxiliary layer (340).

[0079] The auxiliary layer (360) may have a thickness corresponding to the wavelength spectrum of light that the photoelectric element (300) intends to convert into an electrical signal, and this will be described later.

[0080] Each of the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) includes a pixel electrode (211, 221, 231, 310) facing a common electrode (320). One of the pixel electrode (211, 221, 231, 310) and the common electrode (320) is an anode and the other is a cathode. For example, the pixel electrode (211, 221, 231, 310) may be an anode and the common electrode (320) may be a cathode. The pixel electrode (211, 221, 231, 310) is separated for each subpixel (PX) and is electrically connected to a separate thin-film transistor (120) so that it can be driven independently.

[0081] The pixel electrodes (211, 221, 231, 310) and the common electrode (320) may each be a light-transmitting electrode or a reflective electrode, for example, at least one of the pixel electrodes (211, 221, 231, 310) and the common electrode (320) may be a light-transmitting electrode.

[0082] The light-transmitting electrode may be a transparent electrode or a semi-transparent electrode, and the transparent electrode may have a light transmittance of about 85% or more, about 90% or more, or about 95% or more, and the semi-transparent electrode may have a light transmittance of about 30% or more but less than about 85%, about 40% to about 80%, or about 40% to 75%. The transparent electrode and the semi-transparent electrode may include, for example, at least one of an oxide conductor, a carbon conductor, and a metal thin film. The oxide conductor may be one or more selected from, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO), the carbon conductor may be one or more selected from graphene and carbon nanomaterials, and the metal thin film may be a very thin film including aluminum (Al), magnesium (Mg), silver (Ag), gold (Au), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), alloys thereof, or combinations thereof.

[0083] The reflective electrode may include a reflective layer having a light transmittance of about 5% or less and / or a reflectance of about 80% or more, and the reflective layer may include an optically opaque material. The optically opaque material may include a metal, a metal nitride, or a combination thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN), or a combination thereof, but is not limited thereto. The reflective electrode may be composed of a reflective layer or may have a stacked structure of a reflective layer / light transmittance layer or a light transmittance layer / reflective layer / light transmittance layer, and the reflective layer may be one layer or two or more layers.

[0084] For example, when the pixel electrodes (211, 221, 231, 310) are light-transmitting electrodes and the common electrode (320) is a light-transmitting electrode, the sensor-embedded display panel (1000) may be a bottom-emission type display panel that emits light toward the substrate (110). For example, when the pixel electrodes (211, 221, 231, 310) are light-transmitting electrodes and the common electrode (320) is a light-transmitting electrode, the sensor-embedded display panel (1000) may be a top-emission type display panel that emits light toward the opposite side of the substrate (110). For example, when the pixel electrodes (211, 221, 231, 310) and the common electrode (320) are each light-transmitting electrodes, the sensor-embedded display panel (1000) may be a both-side-emission type display panel.

[0085] For example, the pixel electrodes (211, 221, 231, 310) may be reflective electrodes and the common electrode (320) may be a transmissive electrode, in which case the sensor-embedded display panel (1000) may form a microcavity structure. The microcavity structure can improve optical characteristics by repeatedly reflecting between the reflective electrode and the transmissive electrode separated by a predetermined optical length (e.g., the distance between the transmissive electrode and the reflective electrode) to enhance light of a predetermined wavelength spectrum.

[0086] For example, among the light emitted from the light-emitting layers (212, 222, 232) of the first, second, and third light-emitting elements (210, 220, 230), light of a predetermined wavelength spectrum can be modified by repeatedly reflecting between a semi-transparent electrode and a reflective electrode, and among the modified light, light of a wavelength spectrum corresponding to the resonance wavelength of the micro-resonance can be enhanced to exhibit amplified light emission characteristics in a narrow wavelength region. Accordingly, the sensor-embedded display panel (1000) can express a color of high color purity.

[0087] Light of a predetermined wavelength spectrum among the light incident on the photoelectric device (300) can be modified by being repeatedly reflected between the semi-transparent electrode and the reflective electrode, and among the modified light, light of a wavelength spectrum corresponding to the resonance wavelength of the micro-resonance can be enhanced to exhibit amplified photoelectric conversion characteristics in a narrow wavelength region. Accordingly, the photoelectric device (300) can exhibit high photoelectric conversion characteristics in a narrow wavelength region. For example, when the absorption layer (330) of the photoelectric device (300) selectively absorbs light of a green wavelength spectrum having a maximum absorption wavelength of about 500 nm to 600 nm, the optical path length between the semi-transparent electrode and the reflective electrode where the light of the green wavelength spectrum is enhanced can be determined by the thickness of the auxiliary layer (360).

[0088] Each of the first, second, and third light-emitting elements (210, 220, 230) includes a light-emitting layer (212, 222, 232) located between the pixel electrode (211, 221, 231) and the common electrode (320). The light-emitting layer (212) included in the first light-emitting element (210), the light-emitting layer (222) included in the second light-emitting element (220), and the light-emitting layer (232) included in the third light-emitting element (230) may emit light of the same or different wavelength spectrums, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or a combination thereof.

[0089] For example, when the first light-emitting element (210), the second light-emitting element (220), and the third light-emitting element (230) are a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively, the light-emitting layer (212) included in the first light-emitting element (210) may be a red light-emitting layer that emits light of a red wavelength spectrum, the light-emitting layer (222) included in the second light-emitting element (220) may be a green light-emitting layer that emits light of a green wavelength spectrum, and the light-emitting layer (232) included in the third light-emitting element (230) may be a blue light-emitting layer that emits light of a blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may each have a maximum light-emitting wavelength of about 600 nm or more and less than 750 nm, about 500 nm to 600 nm, and about 400 nm or more and less than 500 nm.

[0090] For example, when at least one of the first light-emitting element (210), the second light-emitting element (220), and the third light-emitting element (230) is a white light-emitting element, the light-emitting layer of the white light-emitting element can emit light of the entire visible light spectrum, for example, of a wavelength spectrum of about 380 nm or more and less than 750 nm, about 400 nm to 700 nm, or about 420 nm to 700 nm.

[0091] The light-emitting layer (212, 222, 232) may include at least one host material and a fluorescent or phosphorescent dopant, and at least one of the at least one host material and the fluorescent or phosphorescent dopant may be an organic material. The organic material may include, for example, a low-molecular-weight organic material, and may include, for example, a depositable organic material.

[0092] Additionally, the fourth light-emitting element is placed on the substrate (110) and may be placed on the same plane as the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300). The stacked structure of the fourth light-emitting element is the same as that of the first to third light-emitting elements (210, 220, 230). The light-emitting layer of the fourth light-emitting element can emit light of an infrared wavelength spectrum, for example, about 750 nm or more, about 750 nm to 20 µm, about 780 nm to 20 µm, about 800 nm to 20 µm, about 750 nm to 15 µm, about 780 nm to 15 µm, about 800 nm to 15 µm, about 750 nm to 10 µm, about 780 nm to 10 µm, about 800 nm to 10 µm, about 750 nm to 5 µm, about 780 nm to 5 µm, about 800 nm to 5 µm, about 750 nm to 3 µm, about 780 nm to 3 µm, about 800 nm to 3 µm, about 750 nm to 2 µm, about 780 nm to 2 µm, about 800 nm to 2 µm, about 750 nm to It can have a maximum emission wavelength of 1.5㎛, approximately 780 nm to 1.5㎛, or approximately 800 nm to 1.5㎛.

[0093] The photoelectric element (300) includes an absorption layer (330) located between a pixel electrode (310) and a common electrode (320). The absorption layer (330) may be arranged alongside the light-emitting layers (212, 222, 232) of the first, second, and third light-emitting elements (210, 220, 230) along the plane direction (e.g., xy direction) of the substrate (110), and the absorption layer (330) and the light-emitting layers (212, 222, 232) may be located on the same plane.

[0094] The light absorption layer (330) may be a photoelectric conversion layer that absorbs light of a predetermined wavelength spectrum and converts it into an electrical signal, and may absorb light reflected by the recognition target (40) from at least one of the aforementioned first, second, and third light-emitting elements (210, 220, 230) and convert it into an electrical signal. The light absorption layer (330) may absorb light of, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or an infrared wavelength spectrum, or a combination thereof.

[0095] For example, the absorption layer (330) can absorb light of the red wavelength spectrum, green wavelength spectrum and blue wavelength spectrum, that is, light of the entire visible light spectrum of about 380 nm or more and less than 750 nm, and can absorb light reflected by the recognition target (40) from a combination of light emitted from the first, second, and third light-emitting elements (210, 220, 230).

[0096] For example, the absorption layer (330) can selectively absorb light of a red wavelength spectrum having a maximum absorption wavelength of about 600 nm or more and less than 750 nm, and can absorb light emitted from the red light-emitting element among the first, second, and third light-emitting elements (210, 220, 230) that is reflected by the recognition target (40).

[0097] For example, the absorption layer (330) can selectively absorb light of a green wavelength spectrum having a maximum absorption wavelength of about 500 nm to 600 nm, and can absorb light emitted from the green light-emitting element among the first, second, and third light-emitting elements (210, 220, 230) that is reflected by the recognition target (40).

[0098] For example, the absorption layer (330) can selectively absorb light of a blue wavelength spectrum having a maximum absorption wavelength of about 380 nm or more and less than 500 nm, and can absorb light emitted from a blue light-emitting element among the first, second, and third light-emitting elements (210, 220, 230) that is reflected by the recognition target (40).

[0099] The light-absorbing layer (330) may include a p-type semiconductor and / or an n-type semiconductor for photoelectric conversion of absorbed light. The p-type semiconductor and the n-type semiconductor may form a pn junction and, after receiving light from the outside, generate an exciton, and then separate the generated exciton into holes and electrons. The p-type semiconductor and the n-type semiconductor may each be of one or more types, and at least one of the p-type semiconductor and the n-type semiconductor may be a light-absorbing material that absorbs light of at least some wavelength spectrum of the visible light wavelength spectrum. For example, the p-type semiconductor and / or the n-type semiconductor may be a light-absorbing material that absorbs light of the entire visible light wavelength spectrum. For example, the p-type semiconductor and / or the n-type semiconductor may be a light-absorbing material that selectively absorbs one or two of the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum, and may absorb light of the entire visible light wavelength spectrum by combining multiple materials that absorb light of different wavelength spectra. p-type semiconductors and / or n-type semiconductors can be organic light-absorbing materials.

[0100] For example, the absorption layer (330) may include an organic light-absorbing material that selectively absorbs light of a green wavelength spectrum, and may include, for example, a p-type semiconductor that selectively absorbs light of a green wavelength spectrum.

[0101] The p-type semiconductor may be an organic, inorganic, or organic-inorganic material satisfying a predetermined HOMO energy level, and may have a HOMO energy level of, for example, about 5.0 to 6.0 eV, about 5.1 to 5.9 eV, about 5.2 to 5.8 eV, or about 5.3 to 5.8 eV.

[0102] The p-type semiconductor may be a depositable low-molecular-weight organic compound, for example, an organic compound including an electron-donating moiety and an electron-accepting moiety, and may be represented, for example, by the following chemical formula A.

[0103] [Chemical Formula A]

[0104] EDM - LM - EAM

[0105] In chemical formula A,

[0106] EDM can be an electron-donating moiety, and

[0107] EAM can be an electron-accepting moiety, and

[0108] LM can be a pi-conjugated connected moiety connecting an electron donor moiety and an electron acceptor moiety.

[0109] For example, a p-type semiconductor that selectively absorbs light of a green wavelength spectrum (hereinafter referred to as a 'green p-type semiconductor') may be an organic compound represented by, for example, the following chemical formula A-1.

[0110] [Chemical Formula A-1]

[0112]

[0113] In the above chemical formula A-1,

[0114] X is O, S, Se, Te, SO, SO2, CR b R c or SiR d Re It could be,

[0115] Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fusion rings selected from these, and

[0116] Ar 1a and Ar 2a Each may be an independently substituted or unsubstituted C6 to C30 aryl(len) group or a substituted or unsubstituted C3 to C30 heteroaryl(len) group, and

[0117] R 1a to R 3a and R b to R e Each may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof, and

[0118] Ar 1a , Ar 2a , R 1a and R 2a Each can exist independently or two adjacent ones can combine to form a ring.

[0119] For example, Ar 1a and Ar 2aEach independently a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted pyridinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted It may be a benzotriazinyl group, a substituted or unsubstituted pyridopyrazinyl group, a substituted or unsubstituted pyridopyrimidinyl group, or a substituted or unsubstituted pyridopyridazinyl group.

[0120] For example, Ar 1a and Ar 2a They can fuse together to form a ring.

[0121] For example, Ar 2a and R 1a They can fuse together to form a ring.

[0122] Specifically, the green p-type semiconductor can be represented by the following chemical formula A-1-1 or A-1-2.

[0123] [Chemical Formula A-1-1] [Chemical Formula A-1-2]

[0124]

[0125] In the above chemical formulas A-1-1 and A-1-2,

[0126] X is O, S, Se, Te, SO, SO2, CR b R c or SiR d R e It could be,

[0127] Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fusion rings selected from these, and

[0128] Ar 1a and Ar 2a Each may be an independently substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group, and

[0129] L and Z are each independently single bonds, O, S, Se, Te, SO, SO2, CR f R g , SiR h R i , GeR j R k , NR l , may be a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, and

[0130] R 1a , R 2a , R 3a and R b to R l Each may independently be hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.

[0131] The n-type semiconductor may be an organic, inorganic, or organic-inorganic material satisfying a predetermined LUMO energy level, and may have, for example, LUMO energy levels of 3.3 eV or higher, 3.4 eV or higher, 3.5 eV or higher, 5.5 eV or lower, 5.3 eV or lower, or 5.0 eV or lower. The n-type semiconductor is, for example, C 60 , C 70 , C 78 , C 80 Fullerene or fullerene derivatives such as; thiophene or thiophene derivatives; perylene diimide or derivatives thereof; naphthalene diimide or derivatives thereof; metal-organic complexes or derivatives such as tris(8-hydroxyquinolinato)aluminum (Alq3), subphthalocyanine (SubPc), or phthalocyanine (Pc); or combinations thereof may be included, but are not limited thereto.

[0132] The light-absorbing layer (330) may be an intrinsic layer (Layer I) in which a p-type semiconductor and an n-type semiconductor are mixed in the form of a bulk heterojunction. In this case, the p-type semiconductor and the n-type semiconductor may be mixed in a volume ratio (thickness ratio) of about 1:9 to 9:1, for example, in a volume ratio (thickness ratio) of about 2:8 to 8:2 within the above range, for example, in a volume ratio (thickness ratio) of about 3:7 to 7:3 within the above range, for example, in a volume ratio (thickness ratio) of about 4:6 to 6:4 within the above range, and for example, in a volume ratio (thickness ratio) of about 5:5 within the above range.

[0133] The light-absorbing layer (330) may include a p-layer and / or an n-layer instead of the intrinsic layer (layer I), or may further include a p-layer and / or an n-layer located above and / or below the intrinsic layer (layer I). The p-layer may include, for example, the aforementioned third organic material, and the n-layer may include, for example, the aforementioned second organic material. The light-absorbing layer (330) may be, for example, layer I, p-layer / n-layer, p-layer / layer I, layer I / n-layer, or p-layer / layer I / n-layer, but is not limited thereto.

[0134] The thickness of the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) may each be independently about 5 nm to 300 nm, and within the above range may be about 10 nm to 250 nm, about 20 nm to 200 nm, or about 30 nm to 180 nm. The difference in thickness between the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) may be about 20 nm or less, and within the above range may be about 15 nm or less, about 10 nm or less, or about 5 nm or less, and the thickness of the light-emitting layer (212, 222, 232) and the light-absorbing layer (330) may be substantially the same.

[0135] An encapsulation layer (50) is formed on the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300). The encapsulation layer (50) may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic-inorganic film, or a combination thereof. The organic film may include, for example, an acrylic resin, (meth)acrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxides, nitrides and / or oxynitrides, and may be, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or a combination thereof, but is not limited thereto. The organic-inorganic film may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer (50) may be one layer or two or more layers.

[0136] As such, the sensor-embedded display panel (1000) according to the present embodiment can perform both a display function and an image acquisition function (e.g., a biometric recognition function) by including first, second, and third light-emitting elements (210, 220, 230) that emit light of a predetermined wavelength spectrum to display color, and a photoelectric element (300) that absorbs light reflected by a recognition target (40) and converts it into an electrical signal, within the same plane on the substrate (110). Accordingly, unlike conventional display panels in which the sensor is manufactured as a separate module and attached to the outside of the display panel or formed on the bottom of the display panel, it can have improved performance without increasing the thickness, thereby enabling the realization of a slim, high-performance sensor-embedded display panel (1000).

[0137] Additionally, the photoelectric device (300) can exhibit amplified photoelectric conversion characteristics in a narrow wavelength region by enhancing light of a wavelength spectrum corresponding to the resonance wavelength of the micro-resonance structure by the auxiliary layer (360). Accordingly, the photoelectric device (300) can exhibit high photoelectric conversion characteristics in a narrow wavelength region.

[0138] In addition, the photoelectric element (300) uses light emitted from the first, second, and third light-emitting elements (210, 220, 230), so it can perform an image acquisition function (e.g., a biometric recognition function) without a separate light source. Therefore, since there is no need to provide a separate light source outside the display panel, the decrease in the aperture ratio of the display panel due to the area occupied by the light source can be prevented, and at the same time, the power consumption of the sensor-embedded display panel (1000) can be improved by saving power consumed by a separate light source.

[0139] In addition, as described above, the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) share a common electrode (320), a first common auxiliary layer (340), and a second common auxiliary layer (350), thereby simplifying the structure and process compared to the case where the first, second, and third light-emitting elements (210, 220, 230) and the photoelectric element (300) are formed in separate processes.

[0140] In addition, as described above, the photoelectric element (300) may be an organic photoelectric diode including an organic light-absorbing layer, and accordingly, it may have a light absorption rate more than twice as high as that of an inorganic diode such as a silicon photodiode, so it may have a high-sensitivity sensing function with a thinner thickness.

[0141] In addition, as described above, since the photoelectric element (300) can be placed anywhere in the non-display area (NDA), it can be placed in any number at any desired location on the sensor-embedded display panel (1000). Therefore, for example, by placing the photoelectric element (300) randomly or regularly across the entire sensor-embedded display panel (1000), the biometric recognition function can be performed at any part of the screen of an electronic device such as a mobile device, or the biometric recognition function can be selectively performed only at specific locations where the biometric recognition function is required, depending on the user's choice.

[0142] Additionally, the photoelectric element (300) can convert light emitted from a fourth light-emitting element that emits light of an infrared wavelength spectrum into an electrical signal by absorbing light reflected by the recognition target (40). In this case, the absorption layer (330) of the photoelectric element (300) may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof that selectively absorbs light of an infrared wavelength spectrum, such as a quantum dot, a quinoid metal complex, a polymethine compound, a cyanine compound, a phthalocyanine compound, a merocyanine compound, a naphthalocyanine compound, an immonium compound, a diimmonium compound, a triarylmethane compound, a dipyromethen compound, anthraquinone compound, naphthoquinone, a diquinone compound, a naphthoquinone compound, anthraquinone compound, a squarylium compound, a lylene compound, a perylene compound, a squarein compound, a pyrillium compound, a squarein compound, a thiopyrrolopyrrole compound, a boron dipyromethen compound, a nickel-dithiol complex, a croconium compound, a derivative thereof, or a combination thereof, but is not limited thereto. For example, a material that selectively absorbs light of the above-mentioned infrared wavelength spectrum may be included as a p-type semiconductor, and the aforementioned second organic material may be included as an n-type semiconductor.

[0143] The sensor-embedded display panel (1000) according to the present example includes a fourth light-emitting element that emits light of an infrared wavelength spectrum and a photoelectric element (300) that absorbs light of an infrared wavelength spectrum. In addition to the recognition function (biometric recognition function) according to the above-described embodiment, the sensitivity of the photoelectric element (300) can be improved even in a low-light environment, and the ability to detect three-dimensional images can be further enhanced by widening the dynamic range for detailed distinction between black and white brightness. Therefore, the sensing ability of the sensor-embedded display panel (1000) can be further improved. In particular, since light of the infrared wavelength spectrum has long wavelength characteristics, it can penetrate deeper into the body and effectively obtain information located at different distances. Thus, in addition to fingerprints, images or changes of blood vessels such as veins, irises, and / or faces can be effectively detected, thereby further expanding the scope of application.

[0144] Hereinafter, another example of a sensor-embedded display panel (1000) according to one embodiment is described.

[0145] FIG. 3 is a cross-sectional view showing another example of a sensor-embedded display panel according to one embodiment.

[0146] Referring to FIG. 3, a sensor-embedded display panel (1000) according to one embodiment includes a plurality of subpixels (PX) that display different colors, such as a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different colors selected from red, green, and blue, and the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) each include a first light-emitting element (210), a second light-emitting element (220), and a third light-emitting element (230).

[0147] However, unlike the previously described embodiment, the sensor-embedded display panel (1000) according to the present embodiment may further include a color filter (370) that transmits light of a specific wavelength spectrum. For example, the photoelectric element (300) further includes a color filter (370). The color filter (370) is located on the light-absorbing layer (330). Specifically, the color filter (370) may be located between the common electrode (420) and the protective layer (50), but is not limited thereto.

[0148] The wavelength spectrum of light absorbed by the light absorption layer (330) and the wavelength spectrum of light transmitted by the color filter (370) located on the light absorption layer (330) are the same. For example, if the light absorption layer (330) selectively absorbs light of a green wavelength spectrum having a maximum absorption wavelength at about 500 nm to 600 nm, the color filter (370) may have a maximum transmittance at about 500 nm to 600 nm.

[0149] Hereinafter, another example of a sensor-embedded display panel (1000) according to another embodiment is described.

[0150] FIG. 4 is a plan view of a sensor-embedded display panel according to another embodiment, and FIG. 5 is a cross-sectional view showing an example of a sensor-embedded display panel according to another embodiment.

[0151] Referring to FIGS. 4 and 5, a sensor-embedded display panel (1000) according to another embodiment includes a plurality of subpixels (PX) that display different colors, such as a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different colors selected from red, green, and blue. The first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) each include a first light-emitting element (210), a second light-emitting element (220), and a third light-emitting element (230).

[0152] However, unlike the above-described embodiment, the sensor-embedded display panel (1000) according to the present embodiment includes a first sensor pixel (SPX1), a second sensor pixel (SPX2), and a third sensor pixel (SPX3) that convert light of a first color, a second color, and a third color, which are different from each other, into electrical signals.

[0153] A first sensor pixel (SPX1) that converts light of a first color wavelength spectrum into an electrical signal may be located adjacent to a first subpixel (PX1) capable of emitting light of a first color wavelength spectrum. Similarly, a second sensor pixel (SPX2) that converts light of a second color wavelength spectrum into an electrical signal may be located adjacent to a second subpixel (PX2) capable of emitting light of a second color wavelength spectrum, and a third sensor pixel (SPX3) that converts light of a third color wavelength spectrum into an electrical signal may be located adjacent to a third subpixel (PX3) capable of emitting light of a third color wavelength spectrum. Here, being located adjacent means that the distance between the first subpixel (PX1) and the first sensor pixel (SPX1) is less than or equal to the distance between the second subpixel (PX2) and the first sensor pixel (SPX1) or the distance between the third subpixel (PX3) and the first sensor pixel (SPX1).

[0154] Referring to FIG. 5, a sensor-embedded display panel (1000) according to one embodiment includes, similar to the embodiment of FIG. 1 described above, a substrate (110), a thin-film transistor (120) formed on the substrate (110), an insulating layer (140) formed on the thin-film transistor (120), a pixel defining layer (150) formed on the insulating layer (140), and first, second, and third light-emitting elements (210, 220, 230) located in a space partitioned by the pixel defining layer (150).

[0155] However, the sensor-embedded display panel (1000) according to the present embodiment additionally includes first, second, and third photoelectric elements (300, 301, 302) located in a space partitioned by a pixel definition layer (150) in addition to the above-described embodiment.

[0156] The first sensor pixel (SPX1) includes a second photoelectric element (301), the second sensor pixel (SPX2) includes a first photoelectric element (300), and the third sensor pixel (SPX3) includes a third photoelectric element (302).

[0157] As previously explained, the first sensor pixel (SPX1) can convert light of a red wavelength spectrum with a maximum absorption wavelength in the range of approximately 600 nm to less than 750 nm into an electrical signal, the second sensor pixel (SPX2) can convert light of a green wavelength spectrum with a maximum absorption wavelength in the range of approximately 500 nm to 600 nm into an electrical signal, and the third sensor pixel (SPX3) can convert light of a blue wavelength spectrum with a maximum absorption wavelength in the range of approximately 380 nm to less than 500 nm into an electrical signal.

[0158] Each of the first, second, and third photovoltaic elements (300, 301, 302) includes an absorption layer (330, 331, 332) located between a pixel electrode (310, 311, 312) and a common electrode (320), similar to the photovoltaic element (300) described in FIG. 2.

[0159] The light-absorbing layers (330, 331, 332) can absorb light of a combination of red wavelength spectrum, green wavelength spectrum, and blue wavelength spectrum. The light-absorbing layers (330, 331, 332) may be a common layer containing the same material. The thickness of each of the light-absorbing layers (330, 331, 332) may be substantially the same as each other.

[0160] Meanwhile, the sensor pixel (SPX) may include only two types of sensor pixels that convert two different colors of light into electrical signals. In this case, the light absorption layer (330) can absorb light of a combination of wavelength spectra of two colors (e.g., two colors among red, green, and blue).

[0161] Additionally, the sensor pixel (SPX) may include only four types of sensor pixels that convert light of four different wavelengths into electrical signals. In this case, the absorption layer (330) can absorb light of a combination of the red wavelength spectrum, green wavelength spectrum, blue wavelength spectrum, and infrared wavelength spectrum.

[0162] Each of the first, second, and third photoelectric elements (300, 301, 302) includes first, second, and third auxiliary layers (360, 361, 362) located between the light absorption layer (330, 331, 332) and the second common auxiliary layer (350), similar to the photoelectric element (300) described in FIG. 2. The first, second, and third auxiliary layers (360, 361, 362) may have a thickness corresponding to the wavelength spectrum of light that each of the first, second, and third photoelectric elements (300, 301, 302) intends to convert into an electrical signal.

[0163] For example, depending on the thickness of each of the auxiliary layers (360, 361, 362), the optical path length between the common electrode and the pixel electrode may differ, and light of a green, red, blue, or infrared wavelength spectrum may be resonated. Then, the photoelectric element (300, 301, 302) can convert light of a color spectrum according to the thickness of the corresponding auxiliary layer into an electrical signal.

[0164] The thicknesses of the first, second, and third auxiliary layers (360, 361, 362) may differ from one another. For example, when the first, second, and third photoelectric elements (300, 301, 302) each convert light of green, red, and blue wavelength spectra into electrical signals, the thickness of the auxiliary layer (360) is less than the thickness of the second auxiliary layer (361). The thickness of the third auxiliary layer (362) is less than the thickness of the auxiliary layer (360).

[0165] Meanwhile, at least one of the first, second, and third photovoltaic elements (300, 301, 302) may not have a corresponding auxiliary layer. For example, in the case of the third photovoltaic element (302), since the optical path length corresponding to the blue light spectrum (e.g., the distance between the semi-transparent electrode and the reflective electrode located at the top and bottom of the third photovoltaic element (302)) must be formed shorter than that of the first and second photovoltaic elements (300, 301), it may not have a corresponding third auxiliary layer. That is, the thickness of the third auxiliary layer (362) may be zero.

[0166] Depending on the material forming the light-absorbing layer (330, 331, 332) and / or the thickness of the light-absorbing layer (330, 331, 332), the thicknesses of the first, second, and third auxiliary layers (360, 361, 362) may differ. For example, in two cases where the material forming the p-type semiconductor of the light-absorbing layer (330, 331, 332) is different, the thickness of the first auxiliary layer (360) may differ in each of the two cases.

[0167] The absorption rates in two cases where the thicknesses of the first, second, and third auxiliary layers (360, 361, 362) are different are explained with reference to FIG. 6.

[0168] Figure 6 is a graph showing the absorption rate of the image sensor of Figure 5 according to wavelength.

[0169] As illustrated in FIG. 6 (a) and (b), the first photoelectric element (300) exhibits a maximum absorption rate (601, 611) in the green wavelength spectrum, the second photoelectric element (301) exhibits a maximum absorption rate (600, 610) in the red wavelength spectrum, and the third photoelectric element (302) exhibits a maximum absorption rate (602, 612) in the blue wavelength spectrum.

[0170] The material forming the absorption layer (330, 331, 332) in FIG. 6 (a) and the material forming the absorption layer (330, 331, 332) in FIG. 6 (b) are different from each other. Therefore, the maximum absorption rate for each wavelength is different in FIG. 6 (a) and (b).

[0171] Hereinafter, another example of a sensor-embedded display panel (1000) according to another embodiment is described.

[0172] FIG. 7 is a cross-sectional view showing another example of a sensor-embedded display panel according to a different embodiment.

[0173] Referring to FIG. 7, a sensor-embedded display panel (1000) according to another embodiment comprises, similar to the embodiment of FIG. 5 described above, a plurality of subpixels (PX) that display different colors, namely a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different first, second, and third colors selected from red, green, and blue, and a plurality of sensor pixels (SPX), namely a first sensor pixel (SPX1), a second sensor pixel (SPX2), and a third sensor pixel (SPX3) that absorb light of different first, second, and third colors selected from red, green, and blue and convert it into an electrical signal, wherein the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) each comprise a first light-emitting element (210), a second light-emitting element (220), and a third light-emitting element (230), and the first sensor pixel (SPX1), the second sensor pixel (SPX2), and the converting sensor pixel (SPX1), the second sensor pixel (SPX2), and The third sensor pixel (SPX3) includes a second photoelectric element (301), a first photoelectric element (300), and a third photoelectric element (302), respectively.

[0174] However, unlike the previously described embodiment, the sensor-embedded display panel (1000) according to the present embodiment may further include a color filter (370) that transmits light of a specific wavelength spectrum. For example, the photoelectric element (300) further includes first, second, and third color filters (370, 371, 372). The first, second, and third color filters (370, 371, 372) are located on the light-absorbing layer (330). Specifically, the first, second, and third color filters (370, 371, 372) may be located between the common electrode (420) and the protective layer (50), but are not limited thereto.

[0175] The wavelength spectrum of light absorbed by the light-absorbing layer (330, 331, 332) and the wavelength spectrum of light transmitted by the color filter (370, 371, 372) located on the light-absorbing layer (330, 331, 332) are the same. For example, if the light-absorbing layer (330) selectively absorbs light of a green wavelength spectrum having a maximum absorption wavelength at about 500 nm to 600 nm, the color filter (370) may have a maximum transmittance at about 500 nm to 600 nm. If the light-absorbing layer (331) selectively absorbs light of a red wavelength spectrum having a maximum absorption wavelength at about 600 nm to less than 750 nm, the color filter (371) may have a maximum transmittance at about 600 nm to less than 750 nm. When the absorption layer (332) selectively absorbs light of a blue wavelength spectrum having a maximum absorption wavelength at approximately 380 nm or more and less than 500 nm, the color filter (372) can have a maximum transmittance at approximately 380 nm or more and less than 500 nm.

[0176] Figure 8 is a graph showing the absorption rate of the image sensor of Figure 7 according to wavelength.

[0177] As illustrated in FIG. 8 (a) and (b), by means of color filters (370, 371, 372), the first photoelectric element (300) exhibits a maximum absorption rate (801, 811) in the green wavelength spectrum, the second photoelectric element (301) exhibits a maximum absorption rate (800, 810) in the red wavelength spectrum, and the third photoelectric element (302) exhibits a maximum absorption rate (802, 812) in the blue wavelength spectrum.

[0178] The material forming the absorption layer (330, 331, 332) in FIG. 8 (a) and the material forming the absorption layer (330, 331, 332) in FIG. 8 (b) are different from each other. Therefore, the maximum absorption rate for each wavelength is different in FIG. 8 (a) and (b).

[0179] The sensor-embedded display panel (1000) described above can be applied to various electronic devices such as display devices. Electronic devices such as display devices can be applied to, for example, mobile phones, video phones, smartphones, mobile phones, smart pads, smart watches, digital cameras, tablet PCs, laptop PCs, notebooks, computer monitors, wearable computers, televisions, digital broadcasting terminals, e-books, PDAs (Personal Digital Assistants), PMPs (Portable Multimedia Players), EDAs (enterprise digital assistants), head-mounted display devices (HMDs), vehicle navigation systems, Internet of Things (IoT) devices, Internet of Everything (IoE) devices, drones, door locks, safes, ATMs, security devices, medical devices, or automotive electronic components, but are not limited thereto.

[0180] FIG. 9 is a schematic diagram illustrating an example of a smartphone as an electronic device according to one example.

[0181] Referring to FIG. 9, the electronic device (2000) includes the aforementioned sensor-embedded display panel (1000), and by placing a photoelectric element (300) on the front or part of the sensor-embedded display panel (1000), the biometric recognition function may be performed at any part of the screen, or the biometric recognition function may be selectively performed only at specific locations where the biometric recognition function is required, depending on the user's choice.

[0182] An example of a method for recognizing a recognition target (40) in an electronic device (2000), such as a display device, is, for instance, driving first, second, and third light-emitting elements (210, 220, 230) (or first, second, third, and fourth light-emitting elements) and photoelectric elements (300, 301, 302) of a sensor-embedded display panel (1000) to detect light reflected from the recognition target (40) among the light emitted from the first, second, and third light-emitting elements (210, 220, 230) (or first, second, third, and fourth light-emitting elements) in the photoelectric elements (300, 301, 302); comparing a pre-stored image of the recognition target (40) with an image of the recognition target (40) detected by the photoelectric elements (300, 301, 302); and determining the consistency of the compared images and, if consistent, recognizing The method may include the step of turning off the photoelectric elements (300, 301, 302) and driving the sensor-embedded display panel (1000) to display an image, depending on the determination that the recognition of the target (40) is complete, and allowing user access to the display device.

[0183] FIG. 10 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to one embodiment.

[0184] Referring to FIG. 10, the electronic device (2000) may further include a bus (1310), a processor (1320), a memory (1330), and at least one additional device (1340) in addition to the aforementioned components. Information from the aforementioned sensor-embedded display panel (1000), processor (1320), memory (1330), and at least one additional device (1340) may be transmitted to each other through the bus (1310).

[0185] The processor (1320) may include one or more processing circuitries, such as hardware including logic circuits, a combination of hardware and software such as processor execution software, or a combination thereof. For example, the processing circuitry may be a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a System-on-Chip (SoC), a programmable logic unit, a microprocessor, an application-specific integrated circuit (ASIC), etc. As an example, the processing circuitry may include a non-transitory computer-readable storage device. The processor (1320) may, for example, control the display operation of a sensor-embedded display panel (1000) or control the sensor operation of a photoelectric element (300).

[0186] The memory (1330) can store an instruction program, and the processor (1320) can execute the stored instruction program to perform functions related to the sensor-embedded display panel (1000).

[0187] One or more additional devices (1340) may be one or more communication interfaces (e.g., wireless communication interface, wired interface), user interfaces (e.g., keyboard, mouse, button, etc.), power supply and / or power supply interface, or a combination thereof.

[0188] The units and / or modules described herein may be implemented using hardware components and software components. For example, hardware components may include a microphone, an amplifier, a bandpass filter, an audio-to-digital converter, and a processing unit. A processing unit may be implemented using one or more hardware devices configured to perform and / or execute program code by performing arithmetic, logic, and input / output operations. A processing unit may include a processor, a controller and an arithmetic logic unit, a digital signal processor, a microcomputer, a field programmable array, a programmable logic unit, a microprocessor, or any other device capable of responding to instructions and executing instructions. A processing unit may access, store, operate, process, and generate data in response to the execution of an operating system (OS) and one or more software running on the operating system.

[0189] Software may include computer programs, code, instructions, or combinations thereof, and may transform a processing unit for a special purpose by independently or collectively directing and / or configuring the processing unit to operate as desired. Software and data may be permanently or temporarily implemented as a machine, component, physical or virtual equipment, computer storage media or device, or signal waves capable of providing or interpreting instructions or data to a processing unit. Software may also be distributed through networked computer systems, so that software may be stored and executed in a distributed manner. Software and data may be stored by one or more non-transient computer decoding storage devices.

[0190] The method according to the exemplary embodiment described above may be recorded in a non-transient computer decoding storage device comprising program instructions for implementing various operations of the exemplary embodiment described above. The storage device may also include program instructions, data files, data structures, etc., either alone or in combination. The program instructions recorded in the storage device may be those specifically designed for the present embodiment or may be those known and available to those skilled in the art of computer software. Examples of non-transient computer decoding storage devices may include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROM disks, DVDs, and / or Blu-ray disks; optical-magnetic media such as optical discs; and hardware devices configured to store and execute program instructions, such as ROM, RAM, and flash memory. The device described above may be configured to operate as one or more software modules to perform the operations of the embodiment described above.

[0191] Although the embodiments have been described in detail above, the scope of the rights is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concepts defined in the following claims are also included within the scope of the rights. Explanation of the symbols

[0192] 40: Recognition target 50: Bag layer 110: Substrate 120: Thin-film transistor 140: Insulating layer 141, 142: Contact holes 150: Pixel definition layer 210, 220, 230: Light-emitting elements 300, 301, 302: Photovoltaic elements 211, 221, 231, 310, 311, 312: Pixel electrodes 212, 222, 232: Emitting layer 320: Common electrode 330: Light-absorbing layer 340: First common auxiliary layer 350: Second common auxiliary layer 360, 361, 362: Auxiliary layer 1000: Sensor-embedded display panel 2000: Electronic Devices

Claims

Claim 1 A sensor-embedded display panel comprising a substrate, a light-emitting element located on the substrate and including a light-emitting layer, and a photoelectric element located on the substrate and including an absorption layer arranged parallel to the light-emitting layer along the plane direction of the substrate, wherein the light-emitting element and the photoelectric element each comprise a first common auxiliary layer located above the light-emitting layer and the absorption layer, and a second common auxiliary layer located below the light-emitting layer and the absorption layer, and the photoelectric element further comprises an auxiliary layer having a thickness corresponding to any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, a first sensor pixel that converts light of the red wavelength spectrum into an electrical signal, a second sensor pixel that converts light of the green wavelength spectrum into an electrical signal, a third sensor pixel that converts light of the blue wavelength spectrum into an electrical signal, and a color filter that transmits light of a wavelength spectrum corresponding to the auxiliary layer, wherein the thickness of each of the auxiliary layers of the first sensor pixel, the second sensor pixel, and the third sensor pixel is different from each other. Claim 2 In claim 1, the sensor-embedded display panel, wherein the light-absorbing layer absorbs light of a combination of the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum. Claim 3 In claim 1, the auxiliary layer is a sensor-embedded display panel located between the first common auxiliary layer and the light-absorbing layer. Claim 4 In claim 1, the auxiliary layer is a sensor-embedded display panel located between the second common auxiliary layer and the light-absorbing layer. Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 A sensor-embedded display panel according to claim 1, wherein the light-emitting element and the photoelectric element each further comprise a common electrode that applies a common voltage to the light-emitting element and the photoelectric element and a pixel electrode facing the common electrode, and wherein the first common auxiliary layer is located below the common electrode and the second common auxiliary layer is located on the pixel electrode. Claim 9 In claim 1, the sensor-embedded display panel comprises a display area for displaying an image and a non-display area excluding the display area, and the photoelectric element is located in the non-display area. Claim 10 A sensor-embedded display panel according to claim 9, further comprising a plurality of first subpixels displaying red and including a first light-emitting element, a plurality of second subpixels displaying green and including a second light-emitting element, and a plurality of third subpixels displaying blue and including a third light-emitting element, wherein the plurality of first subpixels, the plurality of second subpixels, and the plurality of third subpixels are located in the display area. Claim 11 In claim 10, the photoelectric element is a sensor-embedded display panel located between at least two selected from the first subpixel, the second subpixel, and the third subpixel. Claim 12 A sensor-embedded display panel according to claim 10, further comprising a plurality of fourth subpixels including a fourth light-emitting element that emits light of an infrared wavelength spectrum, wherein the photoelectric element further absorbs light of an infrared wavelength spectrum. Claim 13 In claim 1, the light-absorbing layer is a sensor-embedded display panel comprising an organic material. Claim 14 In claim 1, the light-emitting layer comprises an organic light-emitting material, a quantum dot, a perovskite, or a combination thereof, forming a sensor-embedded display panel. Claim 15 An image sensor comprising a substrate and an absorption layer located on the substrate that absorbs light of a combination of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, wherein the photoelectric element further comprises a first common auxiliary layer located above the absorption layer, a second common auxiliary layer located below the absorption layer, and an auxiliary layer having a thickness corresponding to any one of the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum, a first sensor pixel that converts light of the red wavelength spectrum into an electrical signal, a second sensor pixel that converts light of the green wavelength spectrum into an electrical signal, and a third sensor pixel that converts light of the blue wavelength spectrum into an electrical signal, and a color filter that transmits light of a wavelength spectrum corresponding to the auxiliary layer, wherein the thickness of each of the auxiliary layers of the first sensor pixel, the second sensor pixel, and the third sensor pixel is different from each other. Claim 16 In item 15, the image sensor, wherein the auxiliary layer is located between the first common auxiliary layer and the light absorption layer. Claim 17 In item 15, the image sensor, wherein the auxiliary layer is located between the second common auxiliary layer and the light absorption layer. Claim 18 delete Claim 19 delete Claim 20 A display device comprising a sensor-embedded display panel according to any one of paragraphs 1 through 4 and paragraphs 8 through 14.

Images