Processing apparatus using multi-frequency power source

Abstract

Provided is a plasma processing device using a multi-frequency power source. The plasma processing device comprises: a process chamber including first and second electrodes opposite each other; a first reactor in fluid communication with the process chamber; a first plasma generation unit including a first winding and a second winding; a first alternating current power source; and a second alternating current power source having a different power frequency than the first alternating current power source, wherein the first alternating current power source is selectively electrically connected to the first winding or the first electrode, and the second alternating current power source is selectively electrically connected to the second winding or the second electrode.

Description

Process processing equipment using multi-frequency power

[0001] The present invention relates to a process treatment facility or plasma treatment device using a multi-frequency power source.

[0002] Plasma refers to a non-neutral substance in a high-energy state with a sufficiently high density of charge. Applying electrical stimulation or microwaves to a neutral gas creates ionized gas molecules and free electrons. Furthermore, under conditions such as an electric field, electrons and ions can continuously collide to reach a plasma state or maintain the electrical properties of plasma.

[0003] Plasma is widely used in various industrial fields, including semiconductor processes such as etching, deposition, washing, and ashing, as well as chamber cleaning processes. Recently, with the enlargement of substrates to be processed such as wafers, there is a demand for plasma generators that have high controllability over plasma ion energy, large-area processing capabilities, and efficient post-processing of process byproducts such as exhaust gases, as well as process processing devices (or equipment) including such plasma generators, especially process processing devices that involve plasma processes.

[0004] Meanwhile, removing foreign substances from the chamber after a deposition process using plasma is a very important factor. Therefore, the problem to be solved by the present invention is to provide a process treatment facility or plasma treatment device (or process treatment system) that has high controllability of the plasma process, enhances productivity, and can clean the interior of the chamber of the process treatment device.

[0005] Another problem to be solved by the present invention is to provide a method for controlling the above process treatment facility or a process treatment method using the above process treatment facility.

[0006] The tasks of the present invention are not limited to the technical tasks mentioned above, and other technical tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0007] According to one embodiment of the present invention for solving the above problem, a plasma processing device comprises a process chamber including a first electrode and a second electrode that are opposed to each other, a first reactor fluidly connected to the process chamber, a first plasma generation unit including a first coil and a second coil, a first AC power source, and a second AC power source having a different power frequency from the first AC power source, wherein the first AC power source is selectively electrically connected to the first coil or the first electrode, and the second AC power source is selectively electrically connected to the second coil or the second electrode.

[0008] The first reactor includes a reaction body, an inlet, and an outlet, and the first winding can be wound on the reaction body on the inlet side more than the second winding.

[0009] In some embodiments, the plasma treatment device may further include a second reactor in fluid communication with the process chamber, a second plasma generation unit including a third winding and a fourth winding, and a third AC power source.

[0010] At this time, the third AC power source can be electrically connected to the second winding and the third winding.

[0011] Alternatively, the third AC power source may be electrically connected to the third winding and the fourth winding.

[0012] Additionally, the third and fourth windings may be physically separated and each may be grounded.

[0013] The first power frequency of the first AC power source may be higher than the second power frequency of the second AC power source and the third power frequency of the third AC power source.

[0014] Additionally, when the first AC power source is electrically connected to the first winding, the second AC power source may be configured to be electrically connected to the second winding, and when the first AC power source is electrically connected to the first electrode, the second AC power source may be configured to be electrically connected to the second electrode.

[0015] The first electrode may include a shower head, and the second electrode may include a chuck.

[0016] According to one embodiment of the present invention for solving the above other problem, a method for controlling a plasma processing device is provided, the method comprising: a process chamber including a first electrode and a second electrode that are opposed to each other; a first reactor fluidly connected to the process chamber; a first plasma generation unit including a first coil and a second coil; a first AC power source; and a second AC power source having a different power frequency from the first AC power source, the method comprising: a first step of connecting the first AC power source to the first electrode and connecting the second AC power source to the second electrode; and a second step of connecting the first AC power source to the first coil and connecting the second AC power source to the second coil.

[0017] The plasma treatment device may further include a second plasma generation unit including a second reactor and a third winding fluidly connected to the process chamber, and a third AC power source.

[0018] At this time, in the second step, the third AC power source can be connected to the third winding.

[0019] Additionally, in the first step, the third AC power source can be connected to the third winding.

[0020] Specific details of other embodiments are included in the detailed description.

[0021] According to embodiments of the present invention, different stages of a process, such as a deposition process and a chamber cleaning process, can be performed using a multi-frequency power source. This can improve process reliability and facilitate management.

[0022] The effects according to the embodiments of the present invention are not limited to the contents exemplified above, and more diverse effects are included in the present specification.

[0023] Figure 1 is a schematic diagram of a process treatment facility according to one embodiment of the present invention.

[0024] Figure 2 is a schematic diagram of the first plasma process unit of Figure 1.

[0025] Figure 3 is a schematic diagram of the second plasma process unit of Figure 1.

[0026] Figure 4 is a schematic diagram of the second plasma process unit of Figure 3 viewed from another direction.

[0027] Fig. 5 is a circuit schematic diagram of the impedance matching unit of Fig. 1.

[0028] Figure 6 is a schematic diagram of a process treatment facility according to another embodiment of the present invention.

[0029] FIG. 7 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0030] FIGS. 8 to 12 are schematic diagrams of a first plasma process unit of a process treatment facility according to further embodiments of the present invention, respectively.

[0031] Figure 13 is a flowchart of a process processing method according to one embodiment of the present invention.

[0032] Figures 14 and 15 are schematic diagrams showing electrical connections at certain stages of Figure 13, respectively.

[0033] The advantages and features of the present invention, as well as the methods for achieving them, will become clearer with reference to the embodiments described in detail below, along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully convey the scope of the invention to those skilled in the art. The present invention is defined solely by the scope of the claims.

[0034] Furthermore, the scope of a patent claim does not describe the technical content that constitutes the substance of the invention, but rather indicates the scope of rights claimed based on the technical components disclosed in the detailed description of the invention. Therefore, it is inevitable that the patent claim is composed of abstract, superordinate concepts encompassing the technology disclosed in the detailed description of the invention. If a person skilled in the art can understand the technical components within the claim, or their combination and operational effects, throughout the entire specification, the patent claim should be considered supported by the detailed description of the invention.

[0035] That is, various modifications may be made to the embodiments presented in the present invention. The embodiments described below are not intended to limit the embodiments, and should be understood to include all modifications, equivalents, and alternatives thereto.

[0036] If any term described in this specification is intended to be used with a specific meaning, that meaning must be defined and interpreted accordingly. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0037] In this specification, "and / or" includes each and every combination of the items mentioned. In addition, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, "comprises" and / or "comprising" do not exclude the presence or addition of one or more other components in addition to the mentioned components. A numerical range indicated using "to" indicates a numerical range that includes the values ​​stated before and after it as the lower and upper limits, respectively. The terms "about" or "approximately" mean a value or numerical range that is within 20% of the value or numerical range stated after it.

[0038] In this specification, ordinal modifiers such as “first component,” “second component,” and “1-1st component” are used only to distinguish one component from another when referring to a component. Therefore, the first component referred to below may be referred to as the second component within the scope of the technical idea of ​​the present invention. For example, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment. Furthermore, what is referred to as the first component in the description of the invention may of course be referred to as the second component in the claims.

[0039] The size, thickness, width, length, etc. of the components illustrated in the drawings may be exaggerated or reduced for convenience and clarity of explanation, and therefore the present invention is not limited to the illustrated form.

[0040] Spatially relative terms such as 'above', 'upper', 'on', 'below', 'beneath', and 'lower' can be used to easily describe the relationship between one element or component and other elements or components as depicted in the drawings. Spatially relative terms should be understood to include different orientations of elements when used in addition to the orientation depicted in the drawings. For example, if an element depicted in a drawing is flipped, an element described as 'below' or 'beneath' another element may actually be 'above' the other element. Thus, the exemplary term 'below' can include both above and below directions.

[0041] The term “electrically connected” or “electrically conductive” as used herein includes not only cases where one component is in direct contact with another component, thereby forming a direct path for current flow between them, but also cases where they are indirectly connected through another conductive path therebetween.

[0042] As used herein, plasma may refer to a substance or state of matter comprising a collection of charged particles associated with a gas. For example, plasma may comprise ionized matter, such as radicals, and neutrons and / or molecules associated therewith.

[0043] Hereinafter, the present invention will be described in detail with reference to the attached drawings.

[0044] FIG. 1 is a schematic diagram of a process treatment facility according to one embodiment of the present invention. FIG. 2 is a schematic diagram of the first plasma process unit of FIG. 1. FIG. 3 is a schematic diagram of the second plasma process unit of FIG. 1. FIG. 4 is a schematic diagram of the second plasma process unit of FIG. 3 viewed from another direction, and is a cross-sectional schematic diagram viewed from above by cutting around the 2-1 extension and the 2-2 extension of the second plasma process unit of FIG. 3. FIG. 5 is a circuit schematic diagram of the impedance matching unit of FIG. 1.

[0045] Referring to FIGS. 1 to 5, the process treatment facility (11) (or process treatment system, or plasma process facility) according to the present embodiment includes a process chamber (300), a first plasma process unit (100) (or a first plasma generation unit), a first power source (410), a second power source (420), a first switching element (S1), and a second switching element (S2), and may further include a second plasma process unit (200) (or a second plasma generation unit), a subsequent process unit (500), a third power source (430), a third switching element (S3), and an impedance matching unit (900).

[0046] The process chamber (300) can provide a process space in which etching, deposition, cleaning, and ashing processes of a substrate to be processed (not shown) are performed. At this time, the first plasma process unit (100) can generate plasma and provide it to the inlet of the process chamber (300) together with a process gas. That is, the first plasma process unit (100) can be located upstream compared to the process chamber (300).

[0047] The process chamber (300) may include a first electrode (310) (or upper electrode) and a second electrode (320) (or lower electrode) that face each other. A reaction space is defined between the first electrode (310) and the second electrode (320), and a substrate to be processed may be placed in the reaction space. When high-frequency alternating current power is applied to the first electrode (310) and / or the second electrode (320) by power sources to be described later, an electric field may be formed in the reaction space. The second electrode (320) may be positioned lower in the direction of gravity compared to the first electrode (310).

[0048] As a non-limiting example, the first electrode (310) may include a shower head. That is, the gas and plasma provided from the first plasma process unit (100) are provided to the internal space of the first electrode (310) that provides a shower head function, and the gas and plasma can be evenly sprayed into the reaction space. In other words, the first electrode (310) itself may provide a gas inflow path of the process chamber (300) and may also function as a shower head or a baffle, but the present invention is not limited thereto.

[0049] Additionally, the second electrode (320) may include a chuck, such as a heating chuck. That is, the substrate to be processed may be placed on top of the second electrode (320). In other words, the second electrode (320) may itself function as a table on which the substrate to be processed is placed or as a substrate fixing member, but the present invention is not limited thereto.

[0050] The first plasma process unit (100) includes a first reactor (110) (or reaction body) that provides a plasma excitation space, and may further include a first-first magnet core (121), a first-second magnet core (122), first insulating members (141, 142, 143, 144), a first-first winding (151), and a first-second winding (152).

[0051] The first reactor (110) has an empty internal space, and the electromotive force induced by the first windings (151, 152) is induced into the internal space in a closed loop shape or a roughly ring shape, and plasma is excited. In addition, neutral gas and / or excited ionized gas molecules and electrons are accelerated in the internal space in the loop shape, and reach a plasma state, or the plasma state can be maintained.

[0052] The first reactor (110) may be understood as an assembly of a plurality of pipes or tubes. The internal space of the first reactor (110) may have a toroidal structure or a donut structure forming a discharge loop therein. For example, the first reactor (110) may include a first inlet (111) having a gas inlet, a first branch (112) (or a 1-1 horizontal flow path) fluidly connected to the first inlet (111) to provide a branch flow path, a 1-1 extension (113) (or a branch, or a 1-1 vertical flow path) and a 1-2 extension (114) (or a branch, or a 1-2 vertical flow path) branched from the first branch (112), a first junction (115) (or a 1-2 horizontal flow path), and a first discharge (116) having a gas discharge port. The first branch portion (112) may be adjacent to the gas inlet side compared to the first joint portion (115), and the first joint portion (115) may be adjacent to the gas outlet side compared to the first branch portion (112). The first inlet portion (111) may be fluidly connected to a gas source (not shown), and the first outlet portion (116) may be fluidly connected to the inlet of the process chamber (300).

[0053] That is, the process gas introduced into the first reactor (110) through the first inlet (111) is accelerated in the loop space formed by the first branch (112), the first-first extension (113), the first joining portion (115), and the first-second extension (114) and reaches the plasma, and the process gas and its plasma can be discharged through the first discharge portion (116) and provided into the process chamber (300). Here, examples of the process gas include oxygen (O2), nitrogen (N2), hydrogen (H2), chlorine (Cl2), argon (Ar), helium (He), ammonia (NH3), nitrogen fluoride (NF3), carbon fluoride, and chlorine trifluoride (ClF3).

[0054] One or more, or all, of the first inlet (111), the first branch (112), the first-first extension (113), the first-second extension (114), the first joint (115), and the first outlet (116) may be made of a metal such as aluminum or iron having electrical conductivity, or an alloy containing the same. In another embodiment, at least some of the above parts may have electrical insulation properties.

[0055] In some embodiments, first insulating members (141, 142, 143, 144) may be disposed between the aforementioned parts constituting the first reactor (110) to partially separate the parts and prevent current saturation. For example, a first-first insulating member (141) may be disposed between the first branch portion (112) and the first-first extension portion (113), and a first-second insulating member (142) may be disposed between the first branch portion (112) and the first-second extension portion (114). In addition, a first-third insulating member (143) may be disposed between the first-first extension portion (113) and the first joining portion (115), and a first-fourth insulating member (144) may be disposed between the first-second extension portion (114) and the first joining portion (115). The first insulating members (141, 142, 143, 144) may be understood as being included in the first reactor (110).

[0056] The first magnet cores (121, 122) may be shaped to at least partially surround and enclose the first reactor (110). The embodiment of FIG. 2 exemplifies a case where a pair of first-first magnet cores (121) are arranged to surround the first branch portion (112) adjacent to the gas inlet and the internal space thereof, and a pair of first-second magnet cores (122) are arranged to surround the first joint portion (115) adjacent to the gas outlet and the internal space thereof.

[0057] Specifically, one of the pair of 1-1 magnet cores (121) may surround the first branch (112) space from the first inlet (111) to the 1-1 extension (113), and the other may surround the first branch (112) space from the first inlet (111) to the 1-2 extension (114). In addition, one of the pair of 1-2 magnet cores (122) may surround the first junction (115) space from the 1-1 extension (113) to the first discharge (116), and the other may surround the first junction (115) space from the 1-2 extension (114) to the first discharge (116).

[0058] The first magnet cores (121, 122) may be formed of a magnetic material or a ferromagnetic material, for example, ferrite. The first magnet cores (121, 122) (or first magnetic materials) can focus an electromagnetic field formed by a current path provided by the first windings (151, 152) described later into the plasma discharge space. And, an electromotive force can be induced in the internal space of the first reactor (110) by the focused electromagnetic field. That is, in the first plasma process unit (100) according to the present embodiment, the first windings (151, 152) are not directly wound around the first reactor (110) and its internal space, but are wound around the first magnet cores (121, 122), and the electromagnetic field can be focused by the first magnet cores (121, 122).

[0059] A pair of 1-1 magnet cores (121) spaced apart from each other in the first direction (X) may be arranged so that the 1-1 winding (151) (or the first winding) is wound around a portion of the 1-1 magnet core (121) by one or more turns to surround the 1-1 magnet core (121). The loop formed by the 1-1 magnet core (121) surrounding the internal space and the loop formed by the 1-1 winding (151) may be substantially orthogonal or intersecting. For example, the 1-1 magnet core (121) may surround the internal space in the second direction (Y) and the third direction (Z), and the 1-1 winding (151) may be wound around the pair of 1-1 magnet cores (121) in a plane direction to which the first direction (X) belongs. Here, the third direction (Z) means a direction perpendicular to the plane to which the first direction (X) and the second direction (Y) belong.

[0060] Depending on the operation of the first switching element (S1), the first-first winding (151) may be electrically connected to the first power source (410) to receive AC power, or the power supply may be cut off. In addition, the first-first winding (151) may be grounded.

[0061] Likewise, a pair of first-second magnet cores (122) spaced apart from each other in the first direction (X) may have a first-second winding (152) (or a second winding) wound around a portion of the first-second magnet core (122) by one or more turns to surround the first-second magnet core (122). The first-second winding (152) may be physically spaced apart from the first-first winding (151) and may be non-conductive. The loop formed by the first-second magnet core (122) surrounding the internal space and the loop formed by the first-second winding (152) may be substantially orthogonal or intersecting. For example, the first-second magnet core (122) may wrap the internal space in the second direction (Y) and the third direction (Z), and the first-second winding (152) may be wound in the plane direction to which the first direction (X) belongs across a pair of the first-second magnet cores (122).

[0062] Depending on the operation of the second switching element (S2), the first-second winding (152) may be electrically connected to the second power source (420) to receive AC power, or the power supply may be cut off. In addition, the first-second winding (152) may be grounded.

[0063] The first power source (410) and the second power source (420) may each provide power for driving the process treatment equipment (11). For example, the first power source (410) and the second power source (420) may each provide high-frequency AC power. The first power source (410) and the second power source (420) may each include a high-frequency oscillator and a power amplifier that amplifies the power to generate high-power high-frequency waves. In an exemplary embodiment, the first power source (410) and the second power source (420) may have different frequencies. For example, the first power source (410) may provide about 1.0×10 4 kHz to 1.5×10 4 kHz, or about 1.2×10 4 kHz to 1.4×10 4 The first power source (410) may have a power frequency of kHz. In addition, the second power source (420) may have a power frequency of about 200 kHz to 500 kHz, or about 300 kHz to 400 kHz. In other words, the power frequency of the first power source (410) may be about 30 times or more the power frequency of the second power source (420).

[0064] Additionally, the power of the first power source (410) and the second power source (420) may also be different. As a non-limiting example, the maximum power of the first power source (410) may be greater than the maximum power of the second power source (420).

[0065] The first power source (410) and the second power source (420) may be electrically connected to an impedance matching unit (900). The impedance matching unit (900) may vary the impedance component between the first-first winding (151) and the first power source (410) to match the impedance. In addition, the impedance matching unit (900) may vary the impedance component between the first-second winding (152) and the second power source (420) to match the impedance. The matching circuit structure of the impedance matching unit (900) is not limited to that illustrated in FIG. 5, and may include a variable capacitor, a variable inductor, and the like. For example, the impedance matching unit (900) may of course further include various sensors or control circuits.

[0066] The first power source (410) is connected to the first switching element (S1), and depending on the operation of the first switching element (S1), the first power source (410) can be electrically connected to the 1-1 winding (151) or electrically connected to the first electrode (310). For example, the above-described 1-1 winding (151) is connected to the 1-1 conductive path (L11) (or the connection part, or the wiring part, or the conductive line, or the line), the first electrode (310) is connected to the 1-2 conductive path (L12), and the first switching element (S1) can electrically connect the first power source (410) to either the 1-1 conductive path (L11) or the 1-2 conductive path (L12).

[0067] As used herein, the term "conductive path" refers to a component that provides a path for current to flow, including electrical wiring or other conductive components. In this case, the term "conductive path" may be used to mean a component that conducts electricity, including one or more switching elements, resistors, or load elements such as inductors.

[0068] In addition, the second power source (420) is connected to the second switching element (S2), and depending on the operation of the second switching element (S2), the second power source (420) may be electrically connected to the 1st-2nd winding (152) or may be electrically connected to the second electrode (320). For example, the above-described 1st-2nd winding (152) is connected to the 2nd-1st conductive path (L21), the second electrode (320) is connected to the 2nd-2nd conductive path (L22), and the second switching element (S2) may electrically connect the second power source (420) to either the 2nd-1st conductive path (L21) or the 2nd-2nd conductive path (L22).

[0069] The controller (950) may be understood as a device including at least one processor. The controller (950) may control the first switching element (S1), the second switching element (S2), and / or the impedance matching unit (900). Examples of the controller (950) include a PLC, etc.

[0070] Meanwhile, the second plasma process unit (200) may be located downstream of the process chamber (300). The second plasma process unit (200) may be fluidly connected to the exhaust port of the process chamber (300). The second plasma process unit (200) performs post-processing of gaseous or solid process by-products discharged from the process chamber (300) and may facilitate collection of by-products by the subsequent process unit (500).

[0071] The second plasma process unit (200) includes a second reactor (210) (or reaction body) that provides a plasma excitation space, and may further include a second-first magnet core (221), a second-second magnet core (222), second insulating members (241, 242, 243, 244), a second-first winding (251), and a second-second winding (252).

[0072] The second reactor (210) has an empty internal space, and the electromotive force induced by the windings (251, 252) is induced into the internal space in a closed loop shape or a roughly ring shape, and plasma is excited. In addition, neutral gas and / or excited ionized gas molecules and electrons are accelerated in the internal space in the loop shape, and reach a plasma state, or the plasma state can be maintained.

[0073] The second reactor (210) may be understood to have a structure substantially identical to or similar to the first reactor (110) described above. That is, the internal space of the second reactor (210) may have a toroidal structure or a donut structure forming a discharge loop therein. For example, the second reactor (210) may include a second inlet portion (211) having an inlet, a second branch portion (212) (or a 2-1 horizontal flow portion) fluidly connected to the second inlet portion (211) to provide a branch flow path, a 2-1 extension portion (213) (or a 2-1 vertical flow portion) and a 2-2 extension portion (214) (or a 2-2 vertical flow portion) branched from the second branch portion (212), a second junction portion (215) (or a 2-2 horizontal flow portion), and a second discharge portion (216) having an outlet. The second branch (212) may be adjacent to the inlet side compared to the second joining part (215), and the second joining part (215) may be adjacent to the outlet side compared to the second branch (212). The second inlet (211) may be fluidly connected to the outlet of the process chamber (300), and the second outlet (216) may be fluidly connected to the subsequent process unit (500). That is, residual gas, etc., introduced into the second reactor (210) from the process chamber (300) through the second inlet (211) may be accelerated in the loop space formed by the second branch (212), the second-1 extension (213), the second joining part (215), and the second-2 extension (214) and may reach the plasma. In addition, the plasma may be discharged through the second outlet (216) and provided into the subsequent process unit (500).

[0074] One or more, or all, of the second inlet (211), the second branch (212), the second-1 extension (213), the second-2 extension (214), the second joint (215), and the second outlet (216) may be made of a metal or alloy having electrical conductivity. In another embodiment, at least some of the above parts may have electrical insulation properties.

[0075] In some embodiments, second insulating members (241, 242, 243, 244) may be disposed between the aforementioned parts constituting the second reactor (210) to partially separate the parts and prevent current saturation. For example, a second-first insulating member (241) may be disposed between the second branch portion (212) and the second-first extension portion (213), and a second-second insulating member (242) may be disposed between the second branch portion (212) and the second-second extension portion (214). In addition, a second-third insulating member (243) may be disposed between the second-first extension portion (213) and the second joining portion (215), and a second-fourth insulating member (244) may be disposed between the second-second extension portion (214) and the second joining portion (215). The second insulating members (241, 242, 243, 244) may be understood as being included in the second reactor (210).

[0076] The second magnet cores (221, 222) may be shaped to at least partially surround and enclose the second reactor (210). The embodiment of FIG. 3 exemplifies a case where the second-first magnet core (221) is arranged to surround the second-first extension (213) and its internal space (S3), and the second-second magnet core (222) is arranged to surround the second-second extension (214) and its internal space (S4).

[0077] The second magnet cores (221, 222) may be formed of a magnetic material or a ferromagnetic material, such as ferrite, similar to the first magnet cores (121, 122). The second magnet cores (221, 222) (or second magnetic materials) may focus an electromagnetic field formed by the second windings (251, 252) described below into the plasma discharge space. In addition, an electromotive force may be induced in the internal space of the second reactor (210) by the focused electromagnetic field. That is, in the second plasma process unit (200) according to the present embodiment, the second windings (251, 252) are not directly wound around the second reactor (210) and its internal space, but are wound around the second magnet cores (221, 222), and the electromagnetic field can be focused by the second magnet cores (221, 222).

[0078] The second-first winding (251) (or third winding) and the second-second winding (252) (or fourth winding) may be wound one or more turns around the second-first magnet core (221) and the second-second magnet core (222), which are spaced apart from each other in the first direction (X), and may be arranged to surround the second magnet cores (221, 222). At this time, the loop surrounding the internal space of the second-first magnet core (221) and the second-second magnet core (222) and the loop formed by the second-first winding (251) and the second-second winding (252) may be substantially orthogonal or intersecting. For example, the 2-1 magnet core (221) and the 2-2 magnet core (222) may each wrap the internal space in the first direction (X) and the second direction (Y), and the 2-1 winding (251) and the 2-2 winding (252) may be wound simultaneously across the 2-1 magnet core (221) and the 2-2 magnet core (222), respectively, in the plane direction to which the first direction (X) and the third direction (Z) belong.

[0079] The second-first winding (251) can be electrically connected to a third power source (430) to receive AC power. For example, without limitation, the second-first winding (251) can always be electrically connected to the third power source (430), regardless of the operation of the third switching element (S3) described below. In addition, the second-first winding (251) can be grounded.

[0080] Additionally, depending on the operation of the third switching element (S3), the second-second winding (252) may be electrically connected to the third power source (430) to receive AC power, or the power supply may be cut off. Additionally, the second-second winding (252) may be grounded.

[0081] The second-first winding (251) and the second-second winding (252) may be physically separated from each other and may be non-conductive. For example, the second-first winding (251) and the second-second winding (252) may be separated from each other in the second direction (Y).

[0082] The third power source (430) can, together with the first power source (410) and the second power source (420), provide power for driving the process treatment equipment (11), for example, at a certain stage of the process. The third power source (430) can provide high-frequency alternating current (AC) power. The third power source (430) can include a high-frequency oscillator and a power amplifier that amplifies power to generate high-power high-frequency waves. In an exemplary embodiment, the third power source (430) can have a different frequency from one or more of the first power source (410) and the second power source (420). For example, the third power source (430) can have a power frequency of about 200 kHz to 500 kHz, or about 300 kHz to 400 kHz. In other words, the power frequency of the first power source (410) can be about 30 times or more the power frequency of the third power source (430).

[0083] Additionally, the power of the third power source (430) may be different from the power of the first power source (410) and / or the second power source (420). As a non-limiting example, the maximum power of the third power source (430) may be greater than the maximum power of the first power source (410) and the second power source (420). More specifically, the maximum power of the third power source (430) may be about 4 times or more, or about 5 times or more, of the first power source (410), and about 8 times or more, or about 10 times or more, of the second power source (420).

[0084] As with the first power source (410) and the second power source (420), the third power source (430) can also be electrically connected to the impedance matching unit (900). The impedance matching unit (900) can match impedances by varying the impedance components between the second-first winding (251) and the second-second winding (252) and the third power source (430). Since the impedance matching unit (900) has been described above, a duplicate description will be omitted.

[0085] The third power source (430) is connected to the third switching element (S3), and depending on the operation of the third switching element (S3), the third power source (430) can be electrically connected to the 2-2 winding (252) or electrically connected to the 1-2 winding (152). Here, being electrically connected to the 1-2 winding (152) means including being connected to another current path electrically connected to the 1-2 winding (152), for example, the 2-1 conductive path (L21). For example, the 2-2 winding (252) is connected to the 3-2 conductive path (L32), and the third switching element (S3) can electrically connect the 3rd switching element (S3) to either the 3-2 conductive path (L32) or the 2-1 conductive path (L21).

[0086] As described above, the 2nd-1 winding (251) is connected to the 3rd-1 conducting path (L31), and the 3rd-1 conducting path (L31) is electrically connected to the 3rd power source (430) regardless of the operation of the 3rd switching element (S3).

[0087] In other words, the third power source (430) can provide power to the 2-2 winding (252) and the 2-1 winding (251), or to the 1-2 winding (152) and the 2-1 winding (251), depending on the operation of the third switching element (S3).

[0088] Although not shown in the drawing, the controller (950) can perform control of the third switching element (S3).

[0089] The subsequent process unit (500) may include a capture chamber for capturing process byproducts discharged through the process chamber (300) and / or the second plasma process unit (200), a pump for generating a fluid flow from upstream to downstream of the process treatment facility (11), etc.

[0090] Hereinafter, other embodiments of the present invention will be described. However, descriptions of configurations substantially identical to or extremely similar to the aforementioned embodiments will be omitted, as those skilled in the art will be able to understand these from the accompanying drawings.

[0091] Figure 6 is a schematic diagram of a process treatment facility according to another embodiment of the present invention.

[0092] Referring to FIG. 6, the process treatment facility (12) according to the present embodiment includes a process chamber (300), a first plasma process unit (100) located upstream from the process chamber (300), and a subsequent process unit (500) located downstream from the process chamber (300), and further includes a second plasma process unit (200), but is different from the embodiment of FIG. 1 in that the inlet of the second plasma process unit (200) is not directly fluidly connected to the outlet of the process chamber (300).

[0093] The inlet of the second plasma process unit (200) is fluidly connected to a separate gas source (not shown), and gas can be injected from the gas source. In addition, the outlet of the second plasma process unit (200) is fluidly connected to the outlet of the process chamber (300), and these can be fluidly connected to the inlet of the subsequent process unit (500).

[0094] FIG. 7 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0095] Referring to FIG. 7, the first plasma process unit (103) of the process treatment facility according to the present embodiment includes a first reactor (110), but is different from the first plasma process unit according to the embodiment of FIG. 2 in that the first branch portion (112) and the first joint portion (115) of the first reactor (110) each include a portion extending in a vertical direction, for example, a third direction (Z).

[0096] The first branch portion (112) includes a first branch portion horizontal portion (112a), and may further include a first branch portion first vertical portion (112b) and a first branch portion second vertical portion (112c) connected at both ends of the first branch portion horizontal portion (112a). Similarly, the first joining portion (115) includes a first joining portion horizontal portion (115a), and may further include a first joining portion first vertical portion (115b) and a first joining portion second vertical portion (115c) connected at both ends of the first joining portion horizontal portion (115a). In addition, the first branch portion first vertical portion (112b) may be connected to the first joining portion first vertical portion (115b), and the first branch portion second vertical portion (112c) may be connected to the first joining portion second vertical portion (115c). A first-first insulating member (141) may be arranged between the first vertical part (112b) of the first branch part and the first vertical part (115b) of the first joint part, and a first-second insulating member (142) may be arranged between the second vertical part (112c) of the first branch part and the second vertical part (115c) of the first joint part.

[0097] In addition, the first-first magnet core (121) and the first-second magnet core (122) can partially surround the first branch portion (112) and the first joining portion (115), respectively. Specifically, a pair of the first-first magnet cores (121) can surround the first vertical portion (112b) of the first branch portion and the second vertical portion (112c) of the first branch portion and their internal spaces, respectively, and a pair of the first-second magnet cores (122) can surround the first vertical portion (115b) of the first joining portion and the second vertical portion (115c) of the first joining portion and their internal spaces, respectively.

[0098] For example, the first-first magnet core (121) and the first-second magnet core (122) may each wrap the internal space of the first reactor (110) in the direction to which the first direction (X) and the second direction (Y) belong, and the first-first winding (151) and the first-second winding (152) may each be wound in the plane direction to which the first direction (X) and the third direction (Z) belong.

[0099] Although FIG. 7 illustrates a modified embodiment of the first plasma processing unit, the structure of FIG. 7 may also be applied to the second plasma processing unit of FIG. 1.

[0100] FIG. 8 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0101] Referring to FIG. 8, the first plasma process unit (104) of the process treatment facility according to the present embodiment includes a first reactor (110), but is different from the first plasma process unit according to the embodiment of FIG. 2 in that the first-first winding (151) does not focus an electromagnetic field through a magnet core, but rather the first-first winding (151) directly wraps around the first reactor (110) and its internal space.

[0102] The first reactor (110) may include a first branch portion (112), a first joining portion (115), a first-first extension portion (113) and a first-second extension portion (114) connecting the first branch portion (112) and the first joining portion (115). In an exemplary embodiment, the first branch portion (112) may be formed of an electrically insulating material, for example, a dielectric material such as quartz, glass, or ceramic, or an insulated metal such as aluminum or iron, or an alloy thereof, and the first-first extension portion (113), the first-second extension portion (114), and the first joining portion (115) may be formed of an electrically conductive metal material. In this case, the insulating member may be at least partially omitted.

[0103] The first-first winding (151) electrically connected to the first-first challenge path (L11) can be wound around the first branch (112) and its internal space. For example, the first branch (112) extends approximately in the first direction (X), and a cross-section of the internal space of the first branch (112) can be approximately parallel to a plane to which the second direction (Y) and the third direction (Z) belong. The first-first winding (151) can be wound in the direction of the plane to which the second direction (Y) and the third direction (Z) belong.

[0104] The 1st-2nd winding (152) is wound around a pair of 1st-2nd magnet cores (122) as described above, so a duplicate description is omitted.

[0105] FIG. 8 shows a modified embodiment of the first plasma processing unit, but the structure of FIG. 8 may also be applied to the second plasma processing unit of FIG. 1.

[0106] FIG. 9 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0107] Referring to FIG. 9, the first reactor (110) of the first plasma process unit (105) of the process treatment facility according to the present embodiment includes a first branch portion (112), a 1-1 extension portion (113), a 1-2 extension portion (114), and a first joining portion (115), but differs from the first plasma process unit according to the embodiment of FIG. 8 in that the 1-1 magnet core (121) and the 1-2 magnet core (122) surround the 1-1 extension portion (113) and the 1-2 extension portion (114), respectively. The 1-1 magnet core (121) referred to in the present embodiment is not configured to be wrapped by the 1-1 winding (151), but both the 1-1 magnet core (121) and the 1-2 magnet core (122) can be wound by the 1-2 winding (152).

[0108] The first branch portion (112) may be made of an insulating material. An insulating member may be omitted between the first branch portion (112) and the first-first extension portion (113) and between the first branch portion (112) and the first-second extension portion (114), but the present invention is not limited thereto.

[0109] The first-first magnet core (121) may be arranged to surround the first-first extension (113), and the first-second magnet core (122) may be arranged to surround the first-second extension (114). For example, the first-first magnet core (121) and the first-second magnet core (122) may surround the first reactor (110) and its internal space in the plane direction to which the first direction (X) and the second direction (Y) belong, respectively.

[0110] Additionally, the first-second winding (152) electrically connected to the second-first conductive path (L21) may be at least partially wound around the first-first magnet core (121) and the first-second magnet core (122). For example, the first-second winding (152) may be wound in a plane direction to which the first direction (X) and the third direction (Z) belong.

[0111] As mentioned above, the 1-1 winding (151) is directly wound on the 1st extension (112), so a duplicate description is omitted.

[0112] Although FIG. 9 shows a modified embodiment of the first plasma processing unit, the structure of FIG. 9 may also be applied to the second plasma processing unit of FIG. 1.

[0113] FIG. 10 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0114] Referring to FIG. 10, the first plasma process unit (106) of the process treatment facility according to the present embodiment includes a first reactor (110), but the first-first winding (151) focuses an electric field through the first-first magnet core (121), and the first-second winding (152) directly wraps around the first reactor (110) and its internal space, which is different from the first plasma process unit according to the embodiment of FIG. 8.

[0115] The first reactor (110) may include a first branch portion (112), a first joining portion (115), a first-first extension portion (113) and a first-second extension portion (114) connecting the first branch portion (112) and the first joining portion (115). In an exemplary embodiment, the first joining portion (115) may be formed of an electrically insulating material, such as an insulator such as quartz, glass, or ceramic, or an insulated metal, and the first branch portion (112), the first-first extension portion (113), and the first-second extension portion (114) may be formed of a metal material. In this case, the insulating member may be at least partially omitted.

[0116] The first-second winding (152) electrically connected to the second-first challenge path (L21) can be wound around the first joint (115) and its internal space. For example, the first joint (115) extends approximately in the first direction (X), and a cross-section of the internal space of the first joint (115) can be approximately parallel to a plane to which the second direction (Y) and the third direction (Z) belong. The first-second winding (152) can be wound in the direction of the plane to which the second direction (Y) and the third direction (Z) belong.

[0117] The 1-1 winding (151) is wound around a pair of 1-1 magnet cores (121) as described with reference to Fig. 2, etc., so any redundant description will be omitted.

[0118] FIG. 10 illustrates a modified embodiment of the first plasma processing unit, but the structure of FIG. 10 may also be applied to the second plasma processing unit of FIG. 1.

[0119] FIG. 11 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0120] Referring to FIG. 11, the first plasma process unit (107) of the process treatment facility according to the present embodiment is different from the first plasma process unit according to the embodiment of FIG. 2 in that the first branch portion (112) includes a first branch portion horizontal portion (112a), a first branch portion first vertical portion (112b), and a first branch portion second vertical portion (112c), and the first joining portion (115) includes a first joining portion horizontal portion (115a), a first joining portion first vertical portion (115b), and a first joining portion second vertical portion (115c).

[0121] The first vertical portion (112b) of the first branch and the first vertical portion (115b) of the first joining portion may be connected to the first-first extension portion (113), and the second vertical portion (112c) of the first branch and the second vertical portion (115c) of the first joining portion may be connected to the first-second extension portion (114). In addition, a first-first insulating member (141) may be arranged between the first vertical portion (112b) of the first branch and the first-first extension portion (113), and a first-second insulating member (142) may be arranged between the second vertical portion (112c) of the first branch and the first-second extension portion (114). Additionally, a 1-3 insulating member (143) may be placed between the first vertical portion (115b) of the first joint and the 1-1 extension portion (113), and a 1-4 insulating member (144) may be placed between the second vertical portion (115c) of the first joint and the 1-2 extension portion (114).

[0122] FIG. 11 illustrates a modified embodiment of the first plasma processing unit, but the structure of FIG. 11 may also be applied to the second plasma processing unit of FIG. 1.

[0123] FIG. 12 is a schematic diagram of a first plasma process unit of a process treatment facility according to another embodiment of the present invention.

[0124] Referring to FIG. 12, the first plasma process unit (108) of the process treatment facility according to the present embodiment is different from the first plasma process unit according to the embodiment of FIG. 11 in that the first-first magnet core (121) and the first-second magnet core (122) surround the first-first extension (113) and the first-second extension (114), respectively, the first-first winding (151) directly surrounds the first branch (112), and the first-second winding (152) is wound around the first-first magnet core (121) and the first-second magnet core (122). The 1-1 magnet core (121) referred to in this embodiment is not configured to be wrapped around the 1-1 winding (151), but both the 1-1 magnet core (121) and the 1-2 magnet core (122) can be wrapped around the 1-2 winding (152).

[0125] FIG. 12 shows a modified embodiment of the first plasma processing unit, but the structure of FIG. 12 may also be applied to the second plasma processing unit of FIG. 1.

[0126] Hereinafter, a process treatment method or a process treatment facility control method according to the present invention will be described. Fig. 13 is a flowchart of a process treatment method according to an embodiment of the present invention. Fig. 14 is a schematic diagram showing the electrical connection in the first step (S100) of Fig. 13, and Fig. 15 is a schematic diagram showing the electrical connection in the second step (S200) of Fig. 13. Although Figs. 14 and 15 are described based on the embodiment of Fig. 1, the present invention is not limited thereto, and it will be easily understood that the process treatment method according to the present embodiment may be performed using any one or more plasma treatment units or process treatment facilities among Figs. 6 to 12 described above.

[0127] Referring further to FIGS. 13 to 15, the process treatment method (or the control method of the process treatment equipment) according to the present embodiment may include a first step (S100) and a second step (S200). Here, the first step (S100) may be a step of forming an electric field between a first electrode (310) and a second electrode (320) of a process chamber (300) to etch, deposit, clean, or ash a substrate to be processed (W), for example, a wafer, i.e., the present process step. In addition, the second step (S200) may be a step of cleaning (or cleaning) the interior of the process chamber (300) in a state where no substrate to be processed is placed within the process chamber (300), or a rest process step between the present processes.

[0128] The first step (S100) may include controlling at least some of the first switching elements (S1) to the third switching elements (S3) using a controller, thereby electrically connecting the first power source (410) to the first electrode (310) to supply power, and electrically connecting the second power source (420) to the second electrode (320) to supply power. In addition, the first step (S100) may further include electrically connecting the third power source (430) to the 2-2 winding (252) of the second plasma process unit (200) to supply power. In other words, both the 2-1 winding (251) and the 2-2 winding (252) of the second plasma process unit (200) may receive power from the 3rd power source (430).

[0129] In addition, the second step (S200) may include controlling at least some of the first switching elements (S1) to the third switching elements (S3) using a controller, thereby electrically connecting the first power source (410) to the first-first winding (151) to supply power, and electrically connecting the second power source (420) to the first-second winding (152) to supply power. In addition, the second step (S200) may further include electrically connecting the third power source (430) to the first-second winding (152) of the first plasma process unit (100) to supply power. In other words, in the second step (S200), among the second-first winding (251) and the second-second winding (252) of the second plasma process unit (200), only the second-first winding (251) may receive power from the third power source (430).

[0130] In other words, at some point in time, a power source, specifically a first power source (410), may be connected to only one of the first-first winding (151) and the first electrode (310). Also, at some point in time, a power source, specifically a second power source (420), may be connected to only one of the first-second winding (152) and the second electrode (320).

[0131] Additionally, while the first power source (410) supplies power to the first electrode (310), the second power source (420) may not supply power to the first-second winding (152). And while the second power source (420) supplies power to the second electrode (320), the first power source (410) may not supply power to the first-first winding (151).

[0132] According to the present embodiment, power can be supplied to the primary winding of the first plasma process unit (100) using the high-frequency AC power source applied to the first electrode (310) and the second electrode (320), i.e., the first power source (410) and the second power source (420). In addition, while always inducing electromotive force in the second plasma process unit (200) using the third power source (430), the cleaning efficiency of the process chamber (300) can be further increased by connecting the third power source (430) to the first-second winding (152) of the first plasma process unit (100) as needed.

[0133] Although the present invention has been described above with reference to embodiments thereof, these are merely examples and do not limit the present invention. Those skilled in the art will appreciate that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the embodiments of the present invention.

[0134] Therefore, the scope of the present invention should be understood to include modifications, equivalents, or alternatives to the technical concepts exemplified above. For example, each component specifically illustrated in the embodiments of the present invention can be implemented with modifications. Furthermore, any differences related to such modifications and applications should be construed as being within the scope of the present invention as defined in the appended claims.

Claims

1. A process chamber including a first electrode and a second electrode that are opposed to each other; A first plasma generation unit including a first reactor, a first winding and a second winding fluidly connected to the process chamber, 1st AC power source, and Including a second AC power source having a different power frequency from the first AC power source, The first AC power source is selectively electrically connected to the first winding or the first electrode, A plasma treatment device wherein the second AC power source is selectively electrically connected to the second winding or the second electrode.

2. In paragraph 1, The first reactor comprises a reaction body, an inlet and an outlet, A plasma treatment device, wherein the first winding is wound on the reaction body on the inlet side more than the second winding.

3. In paragraph 1, a second plasma generation unit including a second reactor, a third winding and a fourth winding fluidly connected to the process chamber, and Including a third AC power source, The above third AC power source is, electrically connected to the second and third windings, or A plasma treatment device electrically connected to the third and fourth windings.

4. In paragraph 3, The third and fourth windings are physically separated and each grounded plasma treatment device.

5. In paragraph 3, A plasma processing device in which the first power frequency of the first AC power source is greater than the second power frequency of the second AC power source and the third power frequency of the third AC power source.

6. In paragraph 1, When the first AC power source is electrically connected to the first winding, the second AC power source is configured to be electrically connected to the second winding, A plasma processing device configured such that when the first AC power source is electrically connected to the first electrode, the second AC power source is electrically connected to the second electrode.

7. In paragraph 1, The first electrode includes a shower head, The second electrode is a plasma processing device including a chuck.

8. A method for controlling a plasma processing device, comprising: a process chamber including a first electrode and a second electrode that are opposed to each other; a first reactor fluidly connected to the process chamber; a first plasma generating unit including a first winding and a second winding; a first AC power source; and a second AC power source having a different power frequency from the first AC power source. A first step of connecting the first AC power source to the first electrode and connecting the second AC power source to the second electrode; and A control method comprising a second step of connecting the first AC power source to the first winding and connecting the second AC power source to the second winding.

9. In paragraph 8, The plasma treatment device further comprises a second plasma generation unit including a second reactor and a third winding fluidly connected to the process chamber, and a third AC power source, A control method in which, in the second step, the third AC power source is connected to the third winding.

10. In paragraph 9, A control method in which, in the first step, the third AC power source is connected to the third winding.

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