Display panel and electronic device
By optimizing the packaging module structure and using a buffer layer and a multi-layer packaging layer to block water and oxygen, the problem of damage to quantum dot units caused by water-oxygen reaction is solved, the stability of the quantum dot units and the packaging effect of the display panel are improved, and the picture display effect and service life are enhanced.
Patent Information
- Application Number
- PCT/CN2024/085029
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-03-31
- Filing Date
- 2024-03-29
- Publication Date
- 2025-09-11
AI Technical Summary
Quantum dot materials are not resistant to water and oxygen, which causes chemical reactions during the packaging process to damage the quantum dot units, reduce light output efficiency and stability, and affect the display effect of the display panel.
By optimizing the packaging module structure, setting a buffer layer and an encapsulation layer, the buffer layer covers the quantum dot unit and is larger than its area, and combining the atomic layer deposition or sputtering process to prepare the encapsulation layer, a multi-layer packaging structure is formed to block water and oxygen and enhance the protection of the quantum dot unit.
The working stability of the quantum dot unit and the packaging effect of the display panel are improved, the water vapor permeability is reduced, and the picture display effect and service life of the display panel are enhanced.
Smart Images

Figure CN2024085029_12092025_PF_FP_ABST
Abstract
Description
Display panels and electronic devices
[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on March 31, 2023, with application number 202310364277.1, and priority to the Chinese patent application with the invention name “Display Panel and Electronic Device”, all contents of which are incorporated by reference into this application. Technical Field
[0002] The present application relates to the technical field of electronic devices, and in particular to a display panel and an electronic device having the display panel. Background Art
[0003] Quantum dots, as a highly efficient material, have attracted widespread attention in the industry for their high luminous efficiency and exceptionally high color saturation. Display panels utilizing quantum dot technology utilize multiple LED light-emitting units aligned with the quantum dot units. Light emitted by the LEDs excites the quantum dot units, converting the wavelengths of the light to create distinct colors, enabling full-color display. The surface of the quantum dot units also requires an encapsulation module for protection, preventing environmental moisture and oxygen from corroding the display panel's internal functional structures.
[0004] Quantum dot materials are not resistant to water and oxygen. The charged states generated by reactions with water and oxygen significantly reduce the quantum dot material's light efficiency, necessitating an encapsulation process. The encapsulation process for quantum dot units typically involves the use of organometallic precursors or plasma bombardment. These chemical reactions with the quantum dot surface damage the quantum dot material and cause ligand detachment, reducing the quantum dot unit's light extraction efficiency and performance, and impacting its operational stability. High-energy plasmas can also trigger free radical reactions, directly causing irreversible damage to the quantum dot material. Reduced quantum dot unit performance directly impacts the display panel's image quality, diminishing the user experience.
[0005] Summary of the Invention
[0006] This application provides a display panel that, through targeted optimization of the packaging module structure, can improve the operating stability of quantum dot units, enhance device packaging, and thus improve the display quality of the display panel. This application also provides an electronic device having this display panel. This application specifically includes the following technical solutions:
[0007] In the first aspect, the present application provides a display panel, which includes a substrate, a backlight module, a color conversion module and a packaging module stacked in sequence; the backlight module includes a plurality of LED light-emitting units arranged at intervals, and the size of each LED light-emitting unit is between 1μm and 50μm; the color conversion module includes a plurality of quantum dot units, and the plurality of quantum dot units are arranged in a one-to-one correspondence with the plurality of LED light-emitting units, and each quantum dot unit is used to convert the wavelength of light emitted by the corresponding LED light-emitting unit; the packaging module includes a packaging layer and a buffer layer, the packaging layer covers the color conversion module, the buffer layer is located between the packaging layer and the color conversion module, the area of the buffer layer is larger than the area of the plurality of quantum dot units, and the buffer layer is used to protect the plurality of quantum dot units.
[0008] The display panel of the present application is able to improve the PPI (Pixel Per Inch) of the LED light-emitting units by setting a plurality of LED light-emitting units and setting the size of each LED light-emitting unit between 1μm (micrometer) and 50μm. By setting a plurality of quantum dot units and a plurality of LED light-emitting units in a one-to-one correspondence, that is, each quantum dot unit corresponds to an LED light-emitting unit, so that the light emitted by the LED light-emitting unit can be directed to the quantum dot unit and stimulate each quantum dot unit to convert the wavelength of the light emitted by the corresponding LED light-emitting unit. Light of different wavelengths is emitted outward to form different luminous colors, so as to achieve the effect of full-color picture display of the display panel. By setting a substrate, the display panel can support and fix the various functional structures in the display panel so that the various functional structures in the display panel can work normally. In view of the high pixel brightness characteristics of electronic devices such as augmented reality (AR), virtual reality (VR), or near-eye display, the packaging process is crucial. By designing the packaging module structure, the packaging effect of the display panel can be improved and the product life of the micro display panel can be improved.
[0009] The encapsulation module of the display panel of the present application provides a buffer layer between the color conversion module and the encapsulation layer, provides a buffer layer to separate the quantum dot units and the encapsulation layer, and provides an area of the buffer layer that is larger than the area of the multiple quantum dot units, so that the buffer layer can separate the color conversion module and the encapsulation layer to protect the individual quantum dot units. This prevents the organic metal precursor corresponding to the encapsulation layer from chemically reacting with the quantum dot material during the subsequent preparation of the encapsulation layer, causing surface damage to the quantum dot material within the quantum dot unit and ligand shedding, thereby reducing the light extraction efficiency and effect of the quantum dot unit, and reducing the stability and effectiveness of the quantum dot unit. By providing the buffer layer between the color conversion module and the encapsulation layer, the surface of each quantum dot unit facing away from the substrate can be flattened, facilitating the subsequent preparation of other film layers and improving the preparation effect and quality of other film layers.
[0010] The display panel of this application utilizes an encapsulation layer covering a buffer layer, with the buffer layer's area being larger than the area of the multiple quantum dot units. This allows the encapsulation module to encapsulate the display panel, preventing water and oxygen from corroding the functional structures within the display panel. This results in a water vapor transmission rate (WVTR) of less than 5×10-6 g / m2·day. In other words, the buffer layer protects the quantum dot units, while the encapsulation layer encapsulates the display panel to prevent water and oxygen from corroding the quantum dot units and other functional structures within the display panel. This ensures the stability and effectiveness of the quantum dot units, improves the display panel's image quality, and ultimately enhances the user experience.
[0011] In a possible implementation, the encapsulation layer includes a first encapsulation layer, the area of the first encapsulation layer is larger than the area of the buffer layer, and the first encapsulation layer extends beyond the edge of the buffer layer and is in contact with the color conversion module.
[0012] In one possible implementation, the buffer layer is laminated to each quantum dot unit.
[0013] In one possible implementation, the material of the buffer layer is any one of polymethyl methacrylate, epoxy resin, polyethylene terephthalate, polyethylene naphthalate, PAVC, polyparaxylene, PCPX, polyimide, polystyrene, polydimethylsiloxane, amorphous fluorine-containing polymer fluororesin, dichloroparaxylene dimer, fluorinated polyparaxylene, lithium fluoride, titanium dioxide, silicon dioxide, or hafnium dioxide.
[0014] In a possible implementation, the first encapsulation layer is prepared by atomic layer deposition or sputtering process.
[0015] In this implementation, by preparing the first encapsulation layer through atomic layer deposition or sputtering process, the structural density of the first encapsulation layer can be improved, the encapsulation effect of the first encapsulation layer can be improved, and the working stability and working effect of the quantum dot unit can be improved to improve the picture display effect and display stability of the display panel.
[0016] In a possible implementation, the thickness of the first encapsulation layer is between 20 nm (nanometers) and 200 nm.
[0017] In a possible implementation, the thickness of the buffer layer is between 30 nm and 5 μm.
[0018] In one possible implementation, the packaging module includes a second packaging layer, which is adhered to the side of the first packaging layer facing away from the buffer layer. The area of the second packaging layer is larger than that of the first packaging layer, and the area of the substrate is larger than that of the color conversion module. The second packaging layer extends beyond the edge of the first packaging layer and is adhered to the substrate.
[0019] In this implementation, by providing a second encapsulation layer on the side of the first encapsulation layer facing away from the buffer layer, the display panel can be further encapsulated, thereby further improving the encapsulation effect of the encapsulation module on the display panel. By ensuring that the projection of the first encapsulation layer on the second encapsulation layer is contained within the second encapsulation layer, that is, the area of the second encapsulation layer is larger than that of the first encapsulation layer, and the second encapsulation layer extends beyond the edge of the first encapsulation layer to align with the substrate, further encapsulation protection can be provided for the edge of the first encapsulation layer, preventing impurities such as water, oxygen, and dust from the external environment from entering the display panel through the edge of the first encapsulation layer.
[0020] In a possible implementation, the packaging module includes a buffer layer and a second packaging layer, and the second packaging layer is attached to a surface of the buffer layer.
[0021] In a possible implementation, the second encapsulation layer is manufactured by using any one of chemical vapor deposition and magnetron sputtering processes.
[0022] In a possible implementation, the second encapsulation layer is made of silicon nitride.
[0023] In this implementation, the film layer made of silicon nitride has good density. By setting the material of the second packaging layer to be silicon nitride, the packaging effect of the second packaging layer can be improved.
[0024] In a possible implementation, the thickness of the second encapsulation layer is between 200 nm and 4 μm.
[0025] In a possible implementation, the area of the backlight module is larger than the area of the color conversion module, and the second encapsulation layer extends beyond the edge of the first encapsulation layer and is bonded to the backlight module.
[0026] In this implementation, by setting the area of the backlight module larger than that of the color conversion module, the second encapsulation layer can extend to fit the backlight module, completely encapsulating the entire color conversion module. Furthermore, the second encapsulation layer's attachment to the backlight module increases the vertical distance for edge water vapor to diffuse into the interior of the display panel, which helps inhibit the diffusion of water and oxygen, reducing the display panel's water vapor film permeability, further reducing the risk of quantum dot units failing due to water and oxygen corrosion, and thereby improving the quantum dot unit's operational stability. By attaching the second encapsulation layer to the backlight module, a protective ring structure can be formed around the display panel to prevent the adverse effects of edge collapse on the edge encapsulation of the encapsulation module during subsequent cutting of the display panel.
[0027] In one possible implementation, the backlight module includes a stacked driving backplane, a filling layer and an electrode layer, the filling layer is located between the driving backplane and the electrode layer, the LED light-emitting unit is embedded in the filling layer, and the second packaging layer extends beyond the edge of the first packaging layer and is bonded to the electrode layer.
[0028] In this implementation, by partially attaching the second encapsulation layer to the electrode layer, a closed space is formed between the second encapsulation layer and the electrode layer, fully encapsulating the functional structures located between the second encapsulation layer and the electrode layer, further improving the packaging effect of the packaging module. By partially attaching the second encapsulation layer to the electrode layer, a protective ring structure is formed around the display panel. This increases the vertical distance for water vapor to diffuse into the interior of the display panel and inhibits the diffusion of water and oxygen, while also reducing the potential adverse effects of edge collapse on the packaging effect of the packaging module during the display panel cutting process.
[0029] In a possible implementation, the filling layer is made of silicon dioxide.
[0030] In a possible implementation, the second encapsulation layer extends beyond an edge of the first encapsulation layer and is in contact with the filling layer.
[0031] In this implementation, by partially attaching the second encapsulation layer to the filling layer, a closed space is formed between the second encapsulation layer and the filling layer, completely encapsulating the functional structure of the display panel located between the second encapsulation layer and the filling layer, further improving the encapsulation effect of the encapsulation module. By partially attaching the second encapsulation layer to the filling layer, a protective ring structure is formed around the display panel. This increases the vertical distance for water vapor to diffuse into the interior of the display panel and inhibits the diffusion of water and oxygen, while also reducing the adverse effects of edge collapse on the encapsulation effect of the encapsulation module during the display panel cutting process.
[0032] In a possible implementation, a surface of the filling layer facing away from the substrate is flush with a surface of the LED light-emitting unit facing away from the substrate.
[0033] In this implementation, by setting the surface of the filling layer facing away from the substrate to be flush with the surface of the LED light-emitting unit facing away from the substrate, the bonding effect between the LED light-emitting unit and the driving backplane can be improved, thereby improving the device efficiency and yield of the backlight module and ensuring the working performance of the backlight module.
[0034] In a possible implementation, the second encapsulation layer extends beyond an edge of the first encapsulation layer and is bonded to the driver backplane.
[0035] In this implementation, by setting the second encapsulation layer partially attached to the driver backplane, a closed space is formed between the second encapsulation layer and the driver backplane, so as to fully encapsulate the functional structure of the display panel located between the second encapsulation layer and the driver backplane, that is, when the second encapsulation layer is attached to the driver backplane, multiple LED light-emitting units, metal traces arranged on the driver backplane, and pads (metal bonding layer) for bonding to the LED light-emitting units can all be fully encapsulated synchronously, avoiding oxidation and other reactions of metal traces and pads being corroded by water and oxygen, which affects the working reliability of the backlight module. That is, by setting the second encapsulation layer partially attached to the driver backplane, the synchronous encapsulation of the backlight module and the color conversion module can be achieved, which can further improve the encapsulation efficiency and encapsulation effect of the encapsulation module. By setting the second encapsulation layer partially attached to the driver backplane, a protective ring structure can be formed around the display panel to increase the vertical distance of the edge water vapor diffusion to the interior of the display panel and inhibit the diffusion of water and oxygen, while reducing the adverse effects of the edge collapse effect on the encapsulation effect of the encapsulation module during the cutting process of the display panel.
[0036] In a possible implementation, the second encapsulation layer extends beyond the edge of the first encapsulation layer and is adhered to the driving back plate, the filling layer, and the electrode layer.
[0037] In one possible implementation, the color conversion module includes a quantum dot pixel definition layer, each quantum dot unit is embedded in the quantum dot pixel definition layer, the area of the quantum dot pixel definition layer is larger than the area of the first encapsulation layer, and the second encapsulation layer exceeds the edge of the first encapsulation layer and is adhered to the quantum dot pixel definition layer.
[0038] In this implementation, by arranging that each quantum dot unit is embedded in the quantum dot pixel definition layer, the quantum dot units can be spaced apart from each other, avoiding light crosstalk between adjacent quantum dot units and affecting the image display effect of the display panel. By arranging that each quantum dot unit is embedded in the quantum dot pixel definition layer, the inorganic quantum dot pixel definition layer can form a pixelated encapsulation effect on the peripheral side of the quantum dot unit, further improving the stability and effectiveness of the quantum dot unit. By setting the area of the quantum dot pixel definition layer to be larger than the area of the first encapsulation layer, and setting the second encapsulation layer to extend beyond the edge of the first encapsulation layer and to be in contact with the quantum dot pixel definition layer, the second encapsulation layer can achieve an encapsulation effect on the quantum dot pixel definition layer and the first encapsulation layer, and improve the edge encapsulation effect of the display panel.
[0039] In one possible implementation, the material of the quantum dot pixel definition layer includes at least one of aluminum, silver, platinum, gold, copper, titanium, nickel, and chromium. The strong heat dissipation metal filling structure is beneficial to avoiding the high-temperature failure problem of quantum dots caused by the high junction temperature of the LED.
[0040] In this implementation, by setting the quantum dot pixel definition layer to a metal material with high reflectivity, the side wall light reflectivity of the quantum dot unit can be improved, thereby increasing the luminous efficiency and luminous effect of the display module, further reducing the light crosstalk between adjacent quantum dot units, and shrinking the light angle.
[0041] In a possible implementation, the area of the substrate is larger than the area of the backlight module, and the second encapsulation layer extends beyond the edge of the first encapsulation layer and is bonded to the substrate.
[0042] In this implementation, by setting the substrate area larger than the backlight module area, the second encapsulation layer can extend to align with the substrate, thereby enabling the second encapsulation layer to fully encapsulate the color conversion module and the backlight module. This expands the range within which the second encapsulation layer fully encapsulates the functional structures within the display panel, further improving the encapsulation effect of the encapsulation module and the performance of the display panel. By attaching the second encapsulation layer to the substrate, a guard ring structure is formed around the display panel, further increasing the vertical distance that moisture from the edge of the display panel can diffuse into the interior of the display panel and further reducing the impact of subsequent cutting on the edge encapsulation of the encapsulation module.
[0043] In one possible implementation, the packaging module includes a cover plate assembly, which includes a packaging cover plate and a support ring. The packaging cover plate is located on the side of the first packaging layer away from the buffer layer and is spaced apart from the first packaging layer. The support ring is arranged around the periphery of the first packaging layer and supports the packaging cover plate. The support ring and the packaging cover plate work together to encapsulate the display panel.
[0044] In this implementation, a support ring is provided around the periphery of the first encapsulation layer to provide support for the encapsulation cover plate, thereby spacing the encapsulation cover plate from the first encapsulation layer and preventing the encapsulation cover plate from squeezing the first encapsulation layer, thereby ensuring the encapsulation effect of the first encapsulation layer. The support ring and the encapsulation cover plate cooperate to further encapsulate the display panel, further improving the encapsulation effect of the encapsulation module on the display panel. The encapsulation cover plate and the support ring cooperate to further encapsulate the display panel. This structure simplifies the manufacturing process, reduces the difficulty of the encapsulation module manufacturing process, and avoids undesirable phenomena such as peeling and fracture that may occur in multi-layer structures.
[0045] In a possible implementation, the support ring is internally fixed on the color conversion module.
[0046] In this implementation, a support ring is fixed on the color conversion module so that the packaging cover and the support ring cooperate with each other to package the first packaging layer and the edge of the first packaging layer, thereby further packaging the display panel.
[0047] In a possible implementation, the support ring is fixed on the backlight module.
[0048] In this implementation, by setting the area of the backlight module to be larger than the area of the color conversion module, the support ring is fixed on the backlight module, so that the packaging cover and the support ring cooperate with each other to completely encapsulate the entire color conversion module, further reducing the risk of the quantum dot unit failing due to water and oxygen corrosion, thereby improving the working stability of the quantum dot unit.
[0049] In a possible implementation, the support ring is fixed on the driving back plate.
[0050] In a possible implementation manner, the support ring is fixed on the filling layer.
[0051] In a possible implementation manner, the support ring is fixed on the electrode layer.
[0052] In a possible implementation manner, the support ring is fixed on the substrate.
[0053] In this implementation, by setting the area of the substrate to be larger than the area of the backlight module, the support ring is fixed on the substrate, so that the support ring and the packaging cover can completely encapsulate the color conversion module and the backlight module, thereby expanding the scope of the cover assembly to completely encapsulate various functional structures in the display panel, so as to further improve the packaging efficiency and packaging effect of the packaging module and improve the working performance of the display panel.
[0054] In a possible implementation, the material of the support ring includes any one of glass paste, magnesium oxide, calcium oxide, barium oxide, lithium oxide, sodium oxide, potassium oxide, zinc oxide, aluminum oxide, tin oxide, iron oxide, copper oxide, tungsten oxide, boron lead glass, tin phosphate glass, and vanadate glass.
[0055] In a possible implementation, the first encapsulation layer is laminated to the color conversion module.
[0056] In this implementation, by setting the first encapsulation layer partially adhered to the color conversion module, the buffer layer and the edge of the buffer layer can be completely encapsulated, preventing impurities such as water, oxygen, and dust from corroding the quantum dot unit from the edge of the buffer layer, thereby improving the encapsulation effect of the first encapsulation layer on the quantum dot unit and further improving the encapsulation effect on the display panel.
[0057] In a possible implementation, the first encapsulation layer is bonded to the backlight module.
[0058] In this implementation, the first encapsulation layer is extended to fit the backlight module to expand the coverage area and encapsulation range of the first encapsulation layer, thereby further improving the encapsulation effect of the first encapsulation layer on the display panel.
[0059] In a possible implementation, the first packaging layer is bonded to the substrate.
[0060] In this implementation, the first encapsulation layer is extended to be in contact with the substrate to expand the coverage area and encapsulation range of the first encapsulation layer, thereby further improving the encapsulation effect of the first encapsulation layer on the display panel.
[0061] In a possible implementation, along the plane direction of the display panel, the color conversion module has a first distance from the outer edge of the substrate, the backlight module has a second distance from the outer edge of the substrate, the first distance is greater than the second distance, and the packaging module has a stepped shape.
[0062] In this implementation, by setting the first distance greater than the second distance and the stepped shape of the encapsulation module, the distance required for water vapor to diffuse from the edge of the display panel to the interior of the display panel is increased, thereby inhibiting the diffusion of water and oxygen, further reducing the water vapor film permeability of the display panel, and improving the encapsulation effect of the encapsulation module on the display panel. The stepped shape of the encapsulation module increases the bonding area between the film layers of the encapsulation module and improves the adhesion between the film layers, thereby reducing the risk of delamination between the film layers during the cutting process and improving the edge encapsulation effect of the encapsulation module.
[0063] In a possible implementation, the packaging module is in a stepped shape around the color conversion module.
[0064] In a possible implementation, the packaging module is in a stepped shape around the backlight module.
[0065] In a possible implementation, along the plane direction of the display panel, the distance between the packaging module and the outer edge of the substrate is between 50 μm and 150 μm.
[0066] In this implementation, the distance between the outer edge of the encapsulation module and the substrate is set between 50μm and 150μm. This prevents edge collapse from damaging the film layers of the encapsulation module during the display panel cutting process, such as causing delamination between film layers or affecting the edge encapsulation effect of the encapsulation module. In other words, by setting the distance between the outer edge of the encapsulation module and the substrate between 50μm and 150μm, the cutting path can be bypassed, ensuring the edge encapsulation effect of the encapsulation module, and further improving the operating performance of the display panel.
[0067] In a possible implementation, the distance between the outer edges of the packaging module and the backlight module is between 50 μm and 100 μm.
[0068] In this implementation, by setting the outer edge distance between the packaging module and the backlight module to be between 50μm and 100μm, the driving backplane side wall of the backlight module can be completely encapsulated to form a protective effect on the driving backplane side wall and improve the edge packaging effect of the packaging module.
[0069] In a possible implementation, the distance between the first encapsulation layer and the outer edge of the backlight module is greater than 50 μm.
[0070] In this implementation, by setting the distance between the first encapsulation layer and the outer edge of the backlight module to be greater than 50 μm, it can ensure that the second encapsulation layer covers the edge of the first encapsulation layer well, thereby further improving the edge encapsulation effect of the encapsulation module.
[0071] In a possible implementation, the material of the quantum dot unit includes at least one of cadmium selenide, cadmium sulfide, zinc selenide, zinc sulfide, indium phosphide, cadmium telluride, zinc telluride, and silver indium gallium sulfide.
[0072] In this implementation, by using alloy quantum dots, quantum dots doped with alloy materials, or quantum dots modified with strong ligands, the thermal stability of the quantum dots can be improved, thereby enhancing their performance and effectiveness. The core-shell structure design can also enhance the photostability of the quantum dots.
[0073] In a possible implementation, the quantum dot unit is any one of a quantum dot solution, a quantum dot glue, a quantum dot nano-micropore filling structure, or a porous gallium nitride filling structure.
[0074] In this implementation, by configuring the quantum dot unit structure as a quantum dot nanopore-filled structure, the heat dissipation effect of the quantum dot unit can be improved, the operating stability and effectiveness of the quantum dot unit can be improved, and the service life of the quantum dot unit can be increased. Furthermore, by configuring the quantum dot unit structure as a quantum dot nanopore-filled structure, the absorption path length of the quantum dot unit can be increased.
[0075] In one possible implementation, the quantum dot unit is prepared by any one of spin coating, drop coating, inkjet printing, QD-PR lithography or QD layer electrochemical deposition.
[0076] In a possible implementation, the material of the first encapsulation layer is any one of aluminum oxide, aluminum nitride, zinc oxide, and zirconium oxide.
[0077] In this implementation, aluminum oxide, aluminum nitride, zinc oxide, and zirconium oxide are highly dense and transparent materials. By using one of these materials for the first encapsulation layer, the encapsulation effect of the first encapsulation layer is maintained, and its water and oxygen barrier capabilities are enhanced. The first encapsulation layer is a transparent film, which prevents it from affecting the light output of the color conversion module.
[0078] In a possible implementation, the packaging module includes at least one retaining wall, which is disposed around the periphery of the plurality of quantum dot units, and the first packaging layer covers the retaining wall.
[0079] In this implementation, by providing a retaining wall around the periphery of the multiple quantum dot units and then covering the retaining wall with a first encapsulation layer, the diffusion range of water and oxygen penetration can be increased, further inhibiting water and oxygen diffusion and reducing the water vapor film permeability of the display panel. In other words, providing a retaining wall around the periphery of the display area can further improve the packaging effect of the packaging module, thereby ensuring the operational stability and performance of the various functional structures within the display panel.
[0080] In a possible implementation, the buffer layer is contained within the retaining wall, and the thickness of the buffer layer is between 30 nm and 5 μm.
[0081] In this implementation, the buffer layer is contained within the retaining wall, so that the retaining wall can define the boundary of the buffer layer, thereby preventing the buffer layer from overflowing. By setting the thickness of the buffer layer between 30nm and 5μm, the thickness of the buffer layer is increased, which can reduce the difficulty of controlling the thickness of the buffer layer during the production process and improve the preparation effect and quality of the buffer layer. In addition, increasing the thickness of the buffer layer can improve the protective effect of the buffer layer on the quantum dot unit and improve the flattening effect of the buffer layer, facilitating the production of subsequent film layers, thereby further improving the packaging effect of the packaging module.
[0082] In a possible implementation, the number of retaining walls is 1 to 6.
[0083] In this implementation, by setting the number of retaining walls to 1 to 6, the number of retaining walls can be adjusted according to the actual design requirements of the display panel, so as to improve the packaging effect of the display panel while making the display panel suitable for more application scenarios.
[0084] In one possible implementation, the retaining wall includes a first retaining wall and a second retaining wall, wherein the first retaining wall is closer to the LED light-emitting unit than the second retaining wall, wherein in the direction relative to the substrate and the backlight module, the height of the first retaining wall is less than the height of the second retaining wall.
[0085] In a possible implementation, the color conversion module includes a quantum dot pixel definition layer, in which a plurality of mutually spaced pixel holes are defined, and each quantum dot unit is embedded in a pixel hole.
[0086] In this implementation, each quantum dot unit is embedded within a pixel hole, enabling individual encapsulation of the quantum dot units, effectively achieving pixel-level encapsulation. This further reduces the likelihood of water and oxygen corrosion and damage to the quantum dot units, thereby improving their stability and effectiveness. Spacing the pixel holes apart prevents crosstalk between adjacent quantum dot units, ensuring proper display on the display panel.
[0087] In a possible implementation, a passivation layer is provided on the inner wall of each pixel hole, and the passivation layer is used to prevent charge transfer between the quantum dot pixel definition layer and the quantum dot unit.
[0088] In this implementation, by providing a passivation layer, charge transfer between the quantum dot pixel definition layer and the quantum dot unit can be prevented, thereby further ensuring the working stability and working effect of the quantum dot unit.
[0089] In a possible implementation, the passivation layer is formed by atomic layer deposition or sputtering.
[0090] In a possible implementation, the material of the passivation layer is any one of aluminum oxide, aluminum nitride, silicon dioxide, silicon nitride, hafnium oxide, zirconium oxide, silicon carbonitride, boron nitride, and silicon oxynitride.
[0091] In a possible implementation, the thickness of the passivation layer is between 5 nm and 50 nm.
[0092] In a possible implementation, a transition layer is further provided between the first encapsulation layer and the second encapsulation layer, and the transition layer is used to enhance the adhesion between the first encapsulation layer and the second encapsulation layer.
[0093] In this implementation, the provision of a transition layer improves the adhesion between the first and second encapsulation layers, further enhancing the encapsulation effect of the encapsulation module on the display panel. This enhanced adhesion between the first and second encapsulation layers prevents film separation during the cutting process, thereby improving the stability of the film layers within the encapsulation module.
[0094] In a possible implementation, the thickness of the transition layer is between 30 nm and 100 nm, and the material of the transition layer may be SiO 2 .
[0095] In a possible implementation, the display panel further includes an optical function module, which is located on a side of the packaging module facing away from the substrate. The optical function module is used to adjust and control the light shape of the light emitted by the backlight module.
[0096] In this implementation, by providing an optical function module, the light shape of the light emitted by the backlight module can be adjusted and controlled, thereby enriching the picture display effect of the display panel and improving the user experience.
[0097] In a possible implementation, the optical function module is any one of a distributed Bragg reflector and a microlens.
[0098] In a second aspect, the present application further provides an electronic device, comprising a housing and a display panel according to any of the above-mentioned implementations, wherein the display panel is embedded in the housing, and the housing is used to support and protect the display panel.
[0099] The electronic device of the present application can realize the image display function by providing a display panel, and can support and protect the display panel by providing a housing so that the display panel can work normally.
[0100] The electronic device of the present application uses the display panel in any of the above-mentioned implementations, so the electronic device of the present application has all possible beneficial effects of the display panel in any of the above-mentioned implementations.
[0101] In one possible implementation, the electronic device may be, but is not limited to, any one of augmented reality glasses (AR), virtual reality glasses (VR), near-eye displays (NED), mobile phones, tablet computers, televisions, and laptop computers. BRIEF DESCRIPTION OF THE DRAWINGS
[0102] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the implementation. Obviously, the drawings described below are only some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0103] FIG1 is a schematic diagram of a working scenario of the electronic device of the present application;
[0104] FIG2 is a schematic structural diagram of a display panel of an electronic device according to the present application from a side perspective;
[0105] FIG3 is a schematic structural diagram of a viewing angle of one side of the display panel in the embodiment shown in FIG2 ;
[0106] FIG4 is a schematic cross-sectional view of the display panel from one side of the embodiment shown in FIG3 ;
[0107] FIG5 is an enlarged schematic diagram of the local structure of the display panel at position C in the embodiment shown in FIG4 ;
[0108] FIG6 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0109] FIG7 is a schematic structural diagram of a quantum dot unit from a perspective of one side in an embodiment;
[0110] FIG8 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0111] FIG9 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0112] FIG10 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0113] FIG11 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0114] FIG12 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0115] FIG13 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0116] FIG14 is a schematic cross-sectional view of the display panel at position DD in the embodiment shown in FIG13 ;
[0117] FIG15 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0118] FIG16 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0119] FIG17 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0120] FIG18 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0121] FIG19 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0122] FIG20 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0123] FIG21 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0124] FIG22 is an enlarged schematic diagram of the local structure of the display panel at position E in the embodiment shown in FIG21 ;
[0125] FIG23 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0126] FIG24 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0127] FIG25 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0128] FIG26 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0129] FIG27 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0130] FIG28 is a schematic structural diagram showing a viewing angle of one side of a display panel in one embodiment;
[0131] FIG29 is a schematic diagram of a process for preparing an LED light-emitting unit in one embodiment;
[0132] FIG30 is a schematic diagram of the structure of forming a viewing angle on one side of the backlight module in the embodiment shown in FIG29;
[0133] FIG31 is a schematic structural diagram of the backlight module in the embodiment shown in FIG30 at a side viewing angle at the FF position;
[0134] FIG32 is a schematic diagram of a process for preparing a display panel of the present application in one embodiment;
[0135] FIG33 is a schematic structural diagram showing a viewing angle on one side of a display panel in one embodiment. DETAILED DESCRIPTION
[0136] The technical solutions in the embodiments of the present application will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the implementation of the present application, not all of the implementations. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection claimed in this application.
[0137] Referring to FIG1 , FIG1 is a schematic diagram of a working scenario of an electronic device 200 of the present application. As shown in FIG1 , the electronic device 200 of the present application includes a display panel 100 and a housing 201. The display panel 100 is embedded in the housing 201 to realize the screen display function of the electronic device 200.
[0138] The housing 201 is used to support and fix the display panel 100 and can protect the display panel 100 so that the display panel 100 can operate normally.
[0139] For example, the housing 201 can protect and buffer the display panel 100 and other functional structures inside the housing 201 under external force impacts such as falling, knocking, and collision, so as to prevent external impacts from damaging the internal functional structures of the display panel 100.
[0140] By arranging the display panel 100 to be fixed on the housing 201 , the service life and working stability of the display panel 100 can be increased, thereby improving the user experience of the electronic device 200 of the present application.
[0141] For example, in the implementation shown in FIG1 , the electronic device 200 is an augmented reality (AR) pair of glasses. The housing 201 includes a frame 201a and temples 201b rotatably connected to the frame 201a. The temples 201b and the frame 201a are used to secure the AR glasses to the user's head.
[0142] The display panel 100 is fixed to the frame 201a. There can be two display panels 100. The two display panels 100 are respectively provided for the user's left and right eyes, and are used to display images to the user. The two display panels 100 can be transparent, allowing the user to view visible scene light from the environment, which is mixed with the image displayed by the display panels 100 to achieve an augmented reality effect.
[0143] In one embodiment, when the electronic device 200 is a virtual reality glasses (VR), the display panel 100 can be a non-transparent display. The display panel 100 is installed on a virtual display head-mounted device (i.e., the shell 201). The display panel 100 serves as a display device of the virtual reality glasses to display virtual reality images to the user.
[0144] In the embodiments of the present application, the electronic device 200 is taken as an augmented reality glasses for illustrative introduction, but the electronic device 200 of the present application is not limited to being an augmented reality glasses.
[0145] In other embodiments of the present application, the electronic device 200 may also be virtual reality glasses, a near-eye display (NED), a mobile phone, a tablet computer, a television, a laptop computer, other smart wearable devices (for example, smart watches, smart bracelets, etc.), or other electronic products with display functions, and the present application does not make specific limitations on this.
[0146] In the embodiment shown in FIG1 , the housing 201 and the display panel 100 are described as an example, and the specific structure and position of the housing 201 and the display panel 100 are not limited. For ease of description, in the subsequent embodiments of this application, the electronic device 200 is an augmented reality pair of glasses.
[0147] Referring to Figures 2 and 3 , Figure 2 is a schematic diagram of the structure of the display panel 100 of the electronic device 200 of the present application from a one-sided perspective, and Figure 3 is a schematic diagram of the structure of the display panel 100 from a one-sided perspective in the embodiment shown in Figure 2 . The display panel 100 has a display area AA and an edge area NA. In the embodiment shown in Figure 2 , the edge area NA is continuously arranged around the display area AA.
[0148] For example, as shown in FIG3 , a plurality of pixel units P are provided in the display area AA. The pixel units P are configured to emit light outward so that the display panel 100 can display images from the display area AA. The color of the light emitted by the pixel units P includes, but is not limited to, any one of red, green, blue, and yellow.
[0149] In the embodiment shown in FIG3 , a possible arrangement and number of pixel units P are exemplified, but the number and arrangement of pixel units P disposed in the display area AA are not limited thereto. In other embodiments of the present application, the arrangement and number of pixel units P can be adjusted according to actual display requirements.
[0150] In one embodiment, a plurality of metal traces (not shown) may be provided in the display area AA. The metal traces are electrically connected to the respective pixel units P to conduct electricity to the respective pixel units P and transmit drive signals to the respective pixel units P, so that the display panel 100 can achieve different display effects. In one embodiment, the metal traces provided in the display area AA may include a plurality of scan lines and a plurality of data lines.
[0151] In one embodiment, a plurality of drive circuits 101 or drive chips (not shown) may be disposed within the edge area NA. The plurality of drive circuits 101 are electrically connected to each pixel unit P via metal wiring, enabling the drive circuits 101 to apply drive signals to each pixel unit P via the metal wiring to control each pixel unit P to achieve different luminous effects. The drive circuits 101 include, but are not limited to, scan drive circuits, data drive circuits, and the like.
[0152] In one embodiment, at least one pad area 102 may be provided in the edge area NA. The pad area 102 is a region where the electrodes are connected to the peripheral driver integrated circuit. Multiple pads may be arranged in the pad area 102 .
[0153] Among them, in the embodiment shown in Figure 3, an example of arranging a pad area 102 in the edge area NA is used for exemplary description. In other embodiments of the present application, the number of pad areas 102 can also be but is not limited to two or three, and the layout positions of two or three pad areas 102 can also be adjusted according to actual design requirements, and the present application does not limit this.
[0154] In the embodiments shown in Figures 2 and 3, the display area AA and the edge area NA are exemplarily described, and the layout position and area size of the display area AA and the edge area NA are not limited. In other embodiments of the present application, the layout position and area size of the display area AA and the edge area NA can be adjusted according to actual design requirements.
[0155] For example, in one embodiment, the layout position and area size of the edge area NA can be adjusted to achieve the effects of narrow-edge display, borderless display, or full-screen display of the display panel 100, thereby achieving different display effects of the electronic device 200 and further improving the user experience.
[0156] Referring to FIG4 , FIG4 is a schematic cross-sectional view of the display panel 100 from a side perspective in the embodiment shown in FIG3 . In the embodiment shown in FIG4 , the display panel 100 includes a substrate 40, a backlight module 20, a color conversion module 30, and a packaging module 10, wherein the backlight module 20, the color conversion module 30, and the packaging module 10 are sequentially stacked on the substrate 40.
[0157] As shown in FIG4 , the substrate 40 , backlight module 20 , color conversion module 30 and packaging module 10 are all laid out in the display area AA, and the substrate 40 , backlight module 20 , color conversion module 30 and packaging module 10 are all extended into the edge area NA.
[0158] To clearly illustrate the cross-sectional structure of the display panel 100, the embodiment shown in FIG4 is described using four pixel units P as an example. However, the number of pixel units P arranged in the display panel 100 is not limited to four. In other words, the number of pixel units P arranged in the display panel 100 can be set according to actual design requirements.
[0159] The substrate 40 is used to support and secure the various functional structures within the display panel 100, enabling them to be stacked on the surface of the substrate 40 and function properly. The drive circuitry within the display panel is typically fabricated on the substrate and then bonded to the display module. The substrate 40 may be, but is not limited to, a Si substrate, sapphire substrate, SiC substrate, GaN substrate, or the like.
[0160] The backlight module 20 is used to provide a light source. That is, the backlight module 20 can emit light to provide a light source for the display panel 100 to realize a picture display function.
[0161] Exemplarily, in one embodiment, refer to FIG5 , which is an enlarged schematic diagram of the local structure of the display panel 100 at position C in the embodiment shown in FIG4 . In the embodiment shown in FIG5 , the backlight module 20 includes a plurality of stacked LED light-emitting units 21, a driving backplane 22, a filling layer 23, and an electrode layer 24. The filling layer 23 is located between the driving backplane 22 and the electrode layer 24, and the plurality of LED light-emitting units 21 are spaced apart from each other and are all embedded in the filling layer 23. The plurality of LED light-emitting units 21 are accommodated in the display area AA, and the filling layer 23 extends to the edge area NA. Among them, the area of the backlight module 20 is larger than the area of the first encapsulation layer 11, and the second encapsulation layer 12 is also bonded to one or more of the driving backplane 22, the filling layer 23, and the electrode layer 24 in the edge area NA.
[0162] The position of the LED light emitting unit 21 corresponds to the position of the pixel unit P in the display AA. The LED light emitting unit 21 is constructed as a part of the pixel unit P, and is used to provide light source for the pixel unit P to which it corresponds.
[0163] In the embodiment shown in FIG5 , the size of each LED light-emitting unit 21 is between 1 μm and 50 μm, and each LED light-emitting unit 21 may be a micro light-emitting diode (Micro-LED). It is understood that by setting the size of each LED light-emitting unit 21 between 1 μm and 50 μm, the number of LED light-emitting units 21 that can be arranged in the display area AA can be increased, thereby increasing the arrangement density of the pixel units P in the display area AA, thereby improving the image display brightness and contrast of the display panel 100, and thus improving the image display effect of the display panel 100.
[0164] FIG5 illustrates one possible structural size and shape of the LED light-emitting unit 21, but does not limit the shape and size of the LED light-emitting unit 21 to this example. In other embodiments of the present application, the LED light-emitting unit 21 may also be an LED light-emitting unit of other sizes, such as, but not limited to, a mini-LED having a size between 100 μm and 200 μm.
[0165] In the subsequent description of the embodiments, this application takes each LED light-emitting unit 21 as an example of Micro-LED.
[0166] In one embodiment, the filling layer 23 is made of an insulating material, including but not limited to silicon dioxide.
[0167] As shown in Figure 5, the electrode layer 24 covers the surface of the filling layer 23 facing away from the substrate 40, and is adhered to the surface of each LED light-emitting unit 21 facing away from the substrate 40, so that the electrode layer 24 can be electrically connected to the first electrode (not shown in the figure) of each LED light-emitting unit 21.
[0168] A conductive portion 26 is further provided between the electrode layer 24 and the driver backplane 22. One end of the conductive portion 26 is electrically connected to the transparent electrode layer 24 and is electrically connected to the driver backplane 22 through the filling layer 23. The conductive portion 26 is located within the edge area NA. By locating the conductive portion 26 within the edge area NA, it is prevented from affecting the light emission path and light emission effect of each LED light-emitting unit 21, thereby improving the luminous efficiency and light emission effect of the backlight module 20.
[0169] The second electrode (not shown) of each LED light-emitting unit 21 is electrically connected to the driver backplane 22 via a bonding layer 25. As shown in FIG5 , the side of the bonding layer 25 facing away from the driver backplane 22 is electrically connected to the second electrode of each LED light-emitting unit 21, and the other side thereof is electrically connected to the driver backplane 22.
[0170] The polarities of the first electrode and the second electrode are opposite.
[0171] In the embodiment shown in FIG5 , the first electrode is a cathode and the second electrode is an anode. The electrode layer 24 electrically connected to the first electrode may be an indium tin oxide (ITO) thin film layer. As will be appreciated, by configuring the electrode layer 24 as a transparent ITO thin film layer, the electrode layer 24 can simultaneously conduct electricity to each LED light-emitting unit 21 while preventing the electrode layer 24 from blocking light emitted by the LED light-emitting unit 21.
[0172] In another embodiment, the first electrode may be an anode and the second electrode may be a cathode.
[0173] In the embodiment shown in FIG5 , the functional structure of the backlight module 20 and the layout positions of each functional structure are exemplified by taking one possible conduction mode of each LED light-emitting unit 21 as an example, but the embodiment of the backlight module 20 is not limited to this. The arrangement of each functional structure in the backlight module 20 can be adjusted according to actual design requirements and is not limited in this embodiment of the present application.
[0174] It can be understood that in the backlight module 20 , by arranging each LED light-emitting unit 21 to be electrically connected to the driving backplane 22 , the driving backplane 22 can control each LED light-emitting unit 21 to emit light, thereby achieving different lighting effects.
[0175] An embodiment is also shown in Figure 5. In the embodiment shown in Figure 5, the surface of the filling layer 23 facing away from the substrate 40 is flush with the surface of the LED light emitting unit 21 facing away from the substrate 40, and the filling layer 23 completely covers the edge area NA.
[0176] By setting the surface of the filling layer 23 facing away from the substrate 40 to be flush with the surface of the LED light-emitting unit 21 facing away from the substrate 40, and setting the filling layer 23 to completely cover the edge area NA, the bonding yield and bonding effect between the LED light-emitting unit 21 and the driving backplane 22 can be improved, thereby improving the light output efficiency and light output effect of the backlight module 20, and ensuring the working performance of the backlight module 20.
[0177] Continuing with Figure 4 , the color conversion module 30 is used to convert the wavelength of light emitted by the backlight module 20 and emit it outward from the display area AA. Different wavelengths can produce different luminous colors, enabling full-color display on the display panel 100. In the embodiment shown in Figure 4 , the backlight module 20 is located between the substrate 40 and the color conversion module 30. Light emitted by the backlight module 20 is directed into the color conversion module 30, thereby stimulating the color conversion module 30 to emit light and converting the wavelength of the light emitted by the backlight module 20.
[0178] Exemplarily, the color conversion module 30 includes multiple quantum dot units 31 and a quantum dot pixel definition layer 32. The multiple quantum dot units 31 are embedded in the quantum dot pixel definition layer 32. The area of the quantum dot pixel definition layer 32 is larger than the area of the first packaging layer 11. The second packaging layer 12 is also adhered to the quantum dot pixel definition layer 32 in the edge area NA.
[0179] Multiple quantum dot units 31 are arranged in a one-to-one correspondence with multiple LED light-emitting units 21, that is, each quantum dot unit 31 is arranged at a position corresponding to an LED light-emitting unit 21, and the quantum dot unit 31 is used to convert the wavelength of the light emitted by the LED light-emitting unit 21.
[0180] Among them, different wavelengths of light correspond to different luminous colors. The quantum dot unit 31 is used to convert the wavelength of light emitted by the LED light-emitting unit 21, which can mean that the quantum dot unit 31 is used to convert the color of light emitted by the LED light-emitting unit 21.
[0181] For example, in one embodiment, when the wavelength of the light emitted by the LED light emitting unit 21 converted by the quantum dot unit 31 is 625 nm to 740 nm, the light color formed by the quantum dot unit 31 is red light.
[0182] For example, in one embodiment, when the wavelength of the light emitted by the LED light emitting unit 21 converted by the quantum dot unit 31 is 570 nm to 585 nm, the light color formed by the quantum dot unit 31 is yellow light.
[0183] For example, in one embodiment, when the wavelength of the light emitted by the LED light emitting unit 21 converted by the quantum dot unit 31 is 492 nm to 577 nm, the light color formed by the quantum dot unit 31 is green light.
[0184] For example, in one embodiment, when the wavelength of the light emitted by the LED light emitting unit 21 converted by the quantum dot unit 31 is 440-475 nm, the light color formed by the quantum dot unit 31 is blue light.
[0185] For the display panel 100 of the present application, a group of LED light-emitting units 21 and quantum dot units 31 arranged at corresponding positions together constitute a pixel unit P.
[0186] In the embodiment shown in FIG. 4 , the quantum dot pixel definition layer 32 covers the surface of the backlight module 20 facing away from the substrate 40 . That is, in the embodiment shown in FIG. 4 , the quantum dot pixel definition layer 32 covers the electrode layer 24 .
[0187] A plurality of mutually spaced pixel holes 33 are defined within the quantum dot pixel definition layer 32. Each pixel hole 33 is positioned at a location corresponding to a single LED light-emitting unit 21, and each quantum dot unit 31 is embedded within a pixel hole 33. As shown in FIG4 , the plurality of quantum dot units 31 are embedded within the quantum dot pixel definition layer 32, and each quantum dot unit 31 is positioned at a location corresponding to a single LED light-emitting unit 21, so that light emitted by each LED light-emitting unit 21 is directed toward its corresponding quantum dot unit 31, thereby stimulating the quantum dot unit 31 to emit light and converting the color of the light emitted by the LED light-emitting unit 21.
[0188] It can be understood that by setting the quantum dot pixel definition layer 32 on the side of the backlight module 20 away from the substrate 40, and setting each quantum dot unit 31 to be embedded in the pixel hole 33, each quantum dot unit 31 is located on the light output path of the backlight module 20, and the light emitted by each LED light-emitting unit 21 can be directed into the corresponding quantum dot unit 31.
[0189] By spacing the pixel holes 33 apart, light crosstalk between adjacent quantum dot units 31 can be prevented, ensuring normal image display on the display panel 100. By embedding each quantum dot unit 31 within a pixel hole 33, each quantum dot unit 31 can be individually packaged, achieving pixel-level packaging of the quantum dot units 31. This reduces the likelihood of the quantum dot units 31 being corroded and damaged by water and oxygen, further improving the stability and effectiveness of the quantum dot units 31.
[0190] In the embodiment shown in FIG4 , the light emitted by the multiple LED light-emitting units 21 is of the same color, and each LED light-emitting unit 21 may emit blue light or UV light. The colors of the quantum dot units 31 may be, but are not limited to, the three primary colors of red (R), green (G), and blue (B). These units are used to convert the blue light or UV light emitted by the LED light-emitting units 21 into the three primary colors of red (R), green (G), and blue (B), thereby achieving full-color display on the display panel 100.
[0191] In other embodiments of the present application, the color of the light emitted by the LED light-emitting unit 21 can also be other colors, not limited to blue, that is, the light emitted by the LED light-emitting unit 21 only needs to be able to excite the quantum dot unit 31 to emit light and convert color.
[0192] The colors of the quantum dot units 31 are not limited to the three primary colors of red, green, and blue. In other embodiments of the present application, the colors of the quantum dot units 31 can also be yellow, white, or other colors to meet different display requirements of the display panel 100, further enrich the full-color display effect of the display panel 100, and enhance the user's viewing experience.
[0193] In one embodiment, as shown in FIG. 4 , the projection of each LED light-emitting unit 21 on the substrate 40 is contained within the projection of the corresponding quantum dot unit 31 on the substrate 40 .
[0194] By setting the projection of each LED light-emitting unit 21 to be contained within the projection of the corresponding quantum dot unit 31, the light emitted by each LED light-emitting unit 21 can be completely directed to the quantum dot unit 31 for light conversion, thereby improving the light conversion efficiency of the LED light-emitting unit 21 and reducing the power consumption of the backlight module 20.
[0195] In one embodiment, the material of the quantum dot unit 31 includes but is not limited to a core-shell structure composed of at least one of cadmium selenide (CdSe), cadmium sulfide (CdS), zinc selenide (ZnSe), zinc sulfide (ZnS), indium phosphide (InP), cadmium telluride (CdTe), zinc telluride (ZnTe), and silver indium gallium sulfide (AgInGaS).
[0196] By setting the material of the quantum dot unit 31 to a core-shell structure, the light stability of the quantum dot can be improved.
[0197] In one embodiment, the material of the quantum dot unit 31 includes but is not limited to at least one core-shell quantum dot of CdSe / CdS, CdSe / ZnSe, CdS / ZnS, InP / ZnSe, InP / ZnSe / ZnS, ZnSe / ZnS, CdSe / ZnSe / ZnS, CdSe / CdS / ZnS, and InP / GaP.
[0198] In one embodiment, the material of the quantum dot unit 31 can be, but is not limited to, doped Mn or Cu quantum dots.
[0199] In one embodiment, the material of the quantum dot unit 31 can be, but is not limited to, at least one alloy quantum dot selected from ZnCdSe / ZnSe, CdSeS, ZnCdS, ZnCdSe / ZnS, and AgInGaS / ZnS. It is understood that in this embodiment, by setting the material of the quantum dot unit 31 to be alloy quantum dots, doped quantum dots, or modified quantum dots with strong ligands, the thermal stability of the quantum dots can be improved, thereby improving the performance and working effect of the quantum dots.
[0200] In one embodiment, referring to Figure 6, Figure 6 is a schematic structural diagram of a display panel 100 from a side perspective. In the embodiment shown in Figure 6, the quantum dot unit 31 can be, but is not limited to, a quantum dot nano-micropore filling structure 311, such as anodized aluminum oxide (AAO).
[0201] In other embodiments of the present application, the quantum dot material corresponding to the quantum dot unit 31 may also be filled with a quantum dot solution, a quantum dot glue, or a quantum dot porous gallium nitride filling structure.
[0202] By setting the structure of the quantum dot unit 31 to a quantum dot nanopore filling structure, the heat dissipation effect of the quantum dot unit 31 can be improved, the working stability and effectiveness of the quantum dot unit 31 can be improved, and the service life of the quantum dot unit 31 can be increased.
[0203] Furthermore, by setting the structure of the quantum dot unit 31 to a quantum dot nano-micropore filling structure, the absorption optical path of the quantum dot unit 31 can be increased.
[0204] In one embodiment, the quantum dot unit 31 is prepared by any one of spin coating, drop coating, inkjet printing, QD-PR lithography or QD layer electrochemical deposition.
[0205] In one embodiment, referring to FIG7 , FIG7 is a schematic diagram illustrating the structure of a quantum dot in a quantum dot unit 31 from a side perspective. In the embodiment shown in FIG7 , the structure of the quantum dot in the quantum dot unit 31 can be any one of a three-dimensional quantum dot (see FIG7 (a)), a two-dimensional quantum sheet (see FIG7 (b)), and a one-dimensional quantum rod (see FIG7 (c)).
[0206] In one embodiment, the material of the quantum dot pixel definition layer 32 includes but is not limited to at least one of aluminum (Al), silver (Ag), platinum (Pt), gold (Au), copper (Cu), titanium (Ti), nickel (Ni), and chromium (Cr). The strong heat dissipation metal filling structure is beneficial for avoiding the high-temperature failure problem of quantum dots caused by the high junction temperature of the LED light-emitting unit 21.
[0207] By setting the quantum dot pixel definition layer 32 to a metal material with high reflectivity and high thermal conductivity, the side wall light reflectivity of the quantum dot unit 31 can be improved, the operating temperature of the quantum dot unit 31 can be reduced, and the luminous efficiency and luminous effect of the backlight module 20 can be increased, further reducing the light crosstalk between adjacent quantum dot units 31 and shrinking the light angle.
[0208] In one embodiment, the material of the quantum dot pixel definition layer 32 can absorb light. For example, the material of the quantum dot pixel definition layer 32 can be a black matrix to absorb light emitted from the quantum dot units 31 to the sidewalls of the pixel holes 33, thereby preventing light crosstalk between adjacent quantum dot units 31 and affecting the image display effect of the display panel 100.
[0209] In one embodiment, referring to FIG8 , FIG8 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. As shown in FIG8 , a passivation layer 34 is provided on the inner wall of each pixel hole 33 to prevent charge transfer between the quantum dot pixel definition layer 32 and the quantum dot unit 31.
[0210] For example, in the embodiment shown in FIG8 , the wall surface of the quantum dot pixel definition layer 32 exposed at each pixel hole 33 serves as the side wall of each pixel hole 33 . The quantum dot pixel definition layer 32 covers the surface of the electrode layer 24 facing away from the substrate 40 , and the surface of the electrode layer 24 exposed from each pixel hole 33 serves as the bottom wall of each pixel hole 33 .
[0211] The passivation layer 34 covers the sidewalls and bottom wall of the pixel hole 33 to separate the quantum dot unit 31 from the quantum dot pixel definition layer 32 and the quantum dot unit 31 from the electrode layer 24 .
[0212] By providing a passivation layer 34 covering the sidewalls of each pixel hole 33 to separate the metal quantum dot pixel definition layer 32 and the quantum dot unit 31, charge transfer between the quantum dot pixel definition layer 32 and the quantum dot unit 31 due to the Schottky barrier can be prevented. By providing a passivation layer 34 covering the bottom wall of each pixel hole 33 to separate each quantum dot unit 31 from the electrode layer 24, charge transfer between the electrode layer 24 and the quantum dot unit 31 can be prevented, which could affect the stability and effectiveness of the quantum dot unit 31.
[0213] In one embodiment, see also FIG8 . In the embodiment shown in FIG8 , the passivation layer 34 provided on the inner wall of each pixel hole 33 is integrally formed. Exemplarily, the passivation layer 34 covering the sidewalls of each pixel hole 33 and the passivation layer 34 on the bottom wall of the pixel hole 33 are integrally formed.
[0214] It can be understood that by setting the passivation layer 34 on the inner wall of each pixel hole 33 as an integral molding, the side surface of the quantum dot unit 31 located in each pixel hole 33 can be independently packaged to prevent water, oxygen, water vapor, dust, etc. from corroding the quantum dot unit 31, thereby ensuring the working stability and working effect of the quantum dot unit 31.
[0215] In one embodiment, the passivation layer 34 is formed by atomic layer deposition, chemical vapor deposition (CVD), or sputtering.
[0216] In one embodiment, the material of the passivation layer 34 can be any one of aluminum oxide (Al2O3), aluminum nitride (AlN), silicon dioxide (SiO2), silicon nitride (SiNx), hafnium oxide (HfO2), zirconium oxide (ZrO2), silicon carbonitride (SiCN), boron nitride (BN), and silicon oxynitride (SiON).
[0217] In one embodiment, the thickness of the passivation layer 34 is between 5 nm and 50 nm.
[0218] See also Figure 8 . The encapsulation module 10 is used to encapsulate the various functional structures within the display panel 100 to prevent water and oxygen from corroding the display panel 100. As shown in Figure 8 , the encapsulation module 10 includes a stacked buffer layer 13 and an encapsulation layer. The encapsulation layer covers the color conversion module 30, and the buffer layer 13 is located between the encapsulation layer and the color conversion module 30. The area of the buffer layer 13 is larger than the area of the multiple quantum dot units 31, and the buffer layer 13 is used to protect the multiple quantum dot units 31.
[0219] In the embodiment shown in Figure 8, the encapsulation layer includes a first encapsulation layer 11, and the buffer layer 13 is located between the color conversion module 30 and the first encapsulation layer 11. The area of the buffer layer 13 is larger than the sum of the areas of the multiple quantum dot units 31, and in the embodiment shown in Figure 8, the buffer layer 13 is bonded to each quantum dot unit 31.
[0220] The area of the buffer layer 13 is larger than the area of the multiple quantum dot units 31 , that is, the area of the buffer layer 13 is larger than the sum of the areas of all the quantum dot units 31 in the display area AA. It can also be understood that the buffer layer 13 covers the display area AA.
[0221] The buffer layer 13 serves to separate the first encapsulation layer 11 from the quantum dot unit 31 and protect the quantum dot unit 31. The area of the first encapsulation layer 11 is larger than that of the buffer layer 13. The first encapsulation layer 11 extends beyond the edge of the buffer layer 13 to align with the color conversion module 30. Specifically, the first encapsulation layer 11 covers the buffer layer 13 and partially covers the edge area NA. The first encapsulation layer 11 serves to encapsulate the display panel 100 to prevent corrosion by water and oxygen.
[0222] For example, in the embodiment shown in Figure 8, the buffer layer 13 covers the display area AA, and the buffer layer 13 is adhered to the surface of each quantum dot unit 31 facing away from the substrate 40 to form a protective effect on the quantum dot unit 31, thereby preventing the organic metal precursor corresponding to the first encapsulation layer 11 from chemically reacting with the quantum dot material during the subsequent preparation of the first encapsulation layer 11, causing surface damage to the quantum dot material and ligand shedding, reducing the light extraction efficiency and light extraction effect of the quantum dot unit 31, and reducing the stability and effectiveness of the quantum dot unit 31.
[0223] In one embodiment, the material of the buffer layer 13 can be, but is not limited to, any one of polymer materials such as polymethyl methacrylate (PMMA), epoxy resin, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), PAVC, polyparaxylene (PPX), PCPX, polyimide (transparent PI), polystyrene (PS), polydimethylsiloxane (silicon-based PDMS), or amorphous fluorine-containing polymer fluorine resin (fluorine-based CYTOP).
[0224] In one embodiment, when the buffer layer 13 is made of a polymer film, it can be prepared by, but is not limited to, any of spin coating, inkjet printing, thermal chemical vapor deposition polymerization, molecular layer deposition (MLD), flash evaporation, photolithography, and UV curing.
[0225] In one embodiment, the material of the buffer layer 13 can be, but is not limited to, any one of organic or inorganic film layers such as dichloroparaxylene dimer film (Parylene C), fluorinated polyparaxylene film (Parylene-AF4 organic film), lithium fluoride film (LiF), titanium dioxide film (TiO2), silicon dioxide film (SiO2), or hafnium dioxide film (HfO2).
[0226] In one embodiment, when the buffer layer 13 is made of an organic or inorganic film, the buffer layer 13 can be prepared by, but is not limited to, molecular layer deposition, flash evaporation, vapor deposition, or chemical vapor deposition (CVD) processes.
[0227] In one embodiment, the thickness of the buffer layer 13 is between 30 nm and 5 μm.
[0228] In one embodiment, see also FIG8 . In the embodiment shown in FIG8 , the buffer layer 13 is defined by a quantum dot pixel definition layer 32 . Defining the boundary of the buffer layer 13 by the quantum dot pixel definition layer 32 prevents overflow of the buffer layer 13 , improves the molding effect of the buffer layer 13 , and ensures that the buffer layer 13 protects the quantum dot units 31 .
[0229] It can be understood that by setting a buffer layer 13 on the surface of the quantum dot unit 31 away from the substrate 40 and setting the buffer layer 13 to cover the display area AA, the initial packaging effect of each quantum dot unit 31 can be achieved, further improving the packaging effect of each quantum dot unit 31.
[0230] By arranging the buffer layer 13 between the color conversion module 30 and the first encapsulation layer 11, the surface of each quantum dot unit 31 facing away from the substrate 40 can be flattened, facilitating the subsequent preparation of other film layers and improving the preparation effect and quality of other film layers.
[0231] Furthermore, the first encapsulation layer 11 is located on the side of the buffer layer 13 facing away from the substrate 40. The first encapsulation layer 11 completely covers the buffer layer 13, and a portion of the first encapsulation layer 11 extends into the edge region NA. The first encapsulation layer 11 is bonded to one or more of the color conversion module 30, the backlight module 20, and the substrate 40 within the edge region NA.
[0232] In the embodiment shown in Figure 8, the filling layer 23 in the backlight module 20 completely covers the edge area NA, and the quantum dot pixel definition layer 32 in the color conversion module 30 completely covers the filling layer 23, that is, the quantum dot pixel definition layer 32 extending into the edge area NA completely covers the edge area NA, so as to form a flat surface on the surface of the quantum dot pixel definition layer 32 facing away from the substrate 40.
[0233] The first encapsulation layer 11 is attached to the surface of the buffer layer 13 facing away from the substrate 40 in the display area AA, and is attached to the surface of the quantum dot pixel definition layer 32 facing away from the substrate 40 in the edge area NA.
[0234] As will be appreciated, in the embodiment shown in FIG8 , by providing the first encapsulation layer 11 covering the buffer layer 13 and partially extending to the edge area NA, the encapsulation module 10 can achieve its encapsulation function for the display panel 100, thereby preventing water, oxygen, water vapor, dust, or other impurities from corroding the functional structures within the display panel 100. By providing the first encapsulation layer 11 covering the buffer layer 13, the water vapor transmission rate (WVTR) of the display panel 100 can be reduced to less than 5×10-6 g / m2·day.
[0235] The quantum dot unit 31 is protected by the buffer layer 13, and the display panel 100 is encapsulated by the first encapsulation layer 11 to prevent water and oxygen from corroding the quantum dot unit 31 and other functional structures in the display panel 100. This can ensure the stability and effectiveness of the quantum dot unit 31, improve the picture display effect of the display panel 100, and thereby improve the user experience.
[0236] In one embodiment, the material of the first encapsulation layer 11 may be, but is not limited to, any one of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), zinc oxide (ZnO), and zirconium oxide (ZrO 2 ).
[0237] Since the film layers made of aluminum oxide, aluminum nitride, zinc oxide, and zirconium oxide are highly dense and transparent, by setting the material of the first encapsulation layer 11 to be one of aluminum oxide, aluminum nitride, zinc oxide, and zirconium oxide, the encapsulation effect of the first encapsulation layer 11 can be ensured and the water and oxygen barrier capability of the first encapsulation layer 11 can be improved.
[0238] The first encapsulation layer 11 is a transparent film, which can prevent the first encapsulation layer 11 from affecting the light emitting effect of the color conversion module 30 , thereby further improving the image display brightness and display contrast of the display panel 100 .
[0239] In one embodiment, the first encapsulation layer 11 is prepared by atomic layer deposition or sputtering process.
[0240] By preparing the first encapsulation layer 11 by atomic layer deposition or sputtering process, the structural density of the first encapsulation layer 11 can be improved, the encapsulation effect of the first encapsulation layer 11 can be improved, and the working stability and working effect of the quantum dot unit 31 can be improved, thereby improving the picture display effect and display stability of the display panel 100.
[0241] In one embodiment, the thickness of the first encapsulation layer 11 is between 20 nm and 200 nm.
[0242] In one embodiment, referring also to FIG8 , as shown in FIG8 , the encapsulation module 10 further includes a second encapsulation layer 12 . The second encapsulation layer 12 is attached to the side of the first encapsulation layer 11 facing away from the buffer layer 13 . The area of the second encapsulation layer 12 is larger than that of the first encapsulation layer 11 , and the area of the substrate 40 is larger than that of the color conversion module 30 . The second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and is attached to the substrate 40 .
[0243] That is, the second encapsulation layer 12 is at least partially attached to the substrate 40 in the edge area NA to encapsulate the display panel 100. In other words, the projection of the first encapsulation layer 11 on the second encapsulation layer 12 is contained within the second encapsulation layer 12.
[0244] For example, in the embodiment shown in FIG8 , within the display area AA, the second encapsulation layer 12 is adhered to the surface of the first encapsulation layer 11 facing away from the substrate 40. Within the edge area NA, the second encapsulation layer 12 is adhered to the surface of the first encapsulation layer 11 located within the edge area NA and facing away from the substrate 40, as well as to the surface of the quantum dot pixel definition layer 32 facing away from the substrate 40. The second encapsulation layer 12 completely covers the edge area NA.
[0245] By disposing the second encapsulation layer 12 on the side of the first encapsulation layer 11 away from the buffer layer 13 , the display panel 100 can be further encapsulated, thereby further improving the encapsulation effect of the encapsulation module 10 on the display panel 100 .
[0246] By arranging the projection of the first encapsulation layer 11 on the second encapsulation layer 12 to be contained within the second encapsulation layer 12, the edge side of the first encapsulation layer 11 can be encapsulated to prevent impurities such as water, oxygen, and dust in the external environment from entering the display panel 100 from the edge of the first encapsulation layer 11.
[0247] By setting the second encapsulation layer 12 to be partially adhered to the quantum dot pixel definition layer 32, the second encapsulation layer 12 can achieve an encapsulation effect on the quantum dot pixel definition layer 32 and the first encapsulation layer 11, and improve the edge encapsulation effect of the display panel 100, eliminating the possibility of water and oxygen penetration on the edge side of the first encapsulation layer 11.
[0248] In one embodiment, the second encapsulation layer 12 can be made by, but is not limited to, chemical vapor deposition or magnetron sputtering.
[0249] In one embodiment, the second encapsulation layer 12 is made of silicon nitride (SiNx).
[0250] The film layer made of silicon nitride has good density. By setting the second encapsulation layer 12 to be made of silicon nitride, the encapsulation effect of the second encapsulation layer 12 can be improved, and the encapsulation effect of the encapsulation module 10 on the display panel 100 can be further improved.
[0251] In one embodiment, the thickness of the second encapsulation layer 12 is between 200 nm and 4 μm.
[0252] In one embodiment, the encapsulation module 10 may include a buffer layer 13 and a second encapsulation layer 12. The second encapsulation layer 12 may be directly attached to the surface of the buffer layer 13, and may also serve to encapsulate the display panel 100 to prevent water and oxygen corrosion. For the display panel 100 of the present application, the encapsulation module 10 includes a buffer layer 13 and an encapsulation layer. The encapsulation layer may include a first encapsulation layer 11 or a second encapsulation layer 12. The first encapsulation layer 11 and the second encapsulation layer 12 respectively cooperate with the buffer layer 13 to form a reliable encapsulation effect for the encapsulation module 10.
[0253] In one embodiment, the encapsulation layer may also include a first encapsulation layer 11 and a second encapsulation layer 12 , wherein the first encapsulation layer 11 is disposed between the second encapsulation layer 12 and the buffer layer 13 , which can further enhance the encapsulation effect of the encapsulation module 10 .
[0254] In one embodiment, referring to FIG. 9 , FIG. 9 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. The encapsulation module 10 further includes a transition layer 14, which is used to enhance adhesion between the first encapsulation layer 11 and the second encapsulation layer 12. For example, in the embodiment shown in FIG. 9 , the transition layer 14 is located between the first encapsulation layer 11 and the second encapsulation layer 12, and the transition layer 14 completely covers the display area AA and the edge area NA.
[0255] The provision of the transition layer 14 improves the adhesion between the first encapsulation layer 11 and the second encapsulation layer 12, thereby preventing undesirable phenomena such as peeling of the first encapsulation layer 11 and the second encapsulation layer 12 during cutting of the display panel 100. Specifically, the provision of the transition layer 14 between the first encapsulation layer 11 and the second encapsulation layer 12 improves the stability of the encapsulation module 10, thereby enhancing the encapsulation effect of the encapsulation module 10 on the display panel 100.
[0256] In the embodiment shown in FIG9 , the transition layer 14 completely covers the display area AA and the edge area NA, but the embodiment of the transition layer 14 is not limited to this example. In other embodiments of the present application, for example, the transition layer 14 may completely cover the display area AA and partially cover the edge area NA. Alternatively, the transition layer 14 may partially cover the display area AA. The present application does not limit the area or position of the transition layer 14 covering the display area AA or the edge area NA; the area and position of the transition layer 14 may be determined based on actual design requirements.
[0257] In one embodiment, the thickness of the transition layer 14 is between 30 nm and 100 nm.
[0258] In one embodiment, referring to Figures 10 to 12 , Figure 10 is a schematic diagram illustrating a viewing angle from one side of the display panel 100, Figure 11 is a schematic diagram illustrating a viewing angle from one side of the display panel 100, and Figure 12 is a schematic diagram illustrating a viewing angle from one side of the display panel 100. The display panel 100 further includes an optical function module 50 , which is located on a side of the packaging module 10 facing away from the substrate 40 . The optical function module 50 is used to adjust and control the light shape emitted by the backlight module 20 or the color conversion module 30 .
[0259] For example, in the embodiment shown in FIG10 , the optical function module 50 includes a plurality of micro lenses 51. These micro lenses 51 can be disposed on the side of the package module 10 facing away from the substrate 40, with each micro lens 51 corresponding to a position of a quantum dot unit 31. The micro lenses 51 are used to adjust the shape of light emitted from the color conversion module 30 to achieve different light output effects.
[0260] 11 , the optical function module 50 includes a distributed Bragg reflector (DBR) 52. The DBR 52 may be, but is not limited to, disposed on a side of the package module 10 facing away from the substrate 40, and the DBR 52 completely covers the display area AA.
[0261] Among them, FIG11 is illustrative of an embodiment of a distributed Bragg reflector 52, but does not limit the layout position and layout number of the distributed Bragg reflector 52 to this. The layout position and layout number of the distributed Bragg reflector 52 can be adjusted according to the actual design requirements and display requirements of the display panel 100. By forming a resonant cavity (FIG. 11) by bonding a reflective metal layer and a DBR film layer, or by constructing a double DBR film layer structure to form a resonant cavity (FIG. 12), it is possible to construct a resonant cavity for the target light of the quantum dot unit 31, thereby achieving the effect of shrinking the light foot and optimizing the light output light type.
[0262] It can be understood that by providing optical function modules 50 with different structures, it is possible to adjust and control different light emission patterns, thereby enriching the picture display effect of the display panel 100 and improving the user experience.
[0263] In one embodiment, referring to Figures 13 and 14 , Figure 13 is a schematic structural diagram from a side perspective of the display panel 100 in one embodiment, and Figure 14 is a schematic cross-sectional structural diagram of the display panel 100 at position DD in the embodiment shown in Figure 13 . As shown in Figures 13 and 14 , the packaging module 10 includes at least one retaining wall 15. The retaining wall 15 is disposed around the periphery of the plurality of quantum dot units 31, that is, the retaining wall 15 is disposed around the periphery of the display area AA. The first packaging layer 11 covers the retaining wall 15 to increase the diffusion path of water and oxygen permeation, further inhibit water and oxygen diffusion, and reduce the water vapor film permeability of the display panel 100. Specifically, by disposing the retaining wall 15 around the periphery of the display area AA, the packaging effect of the packaging module 10 can be further improved, thereby ensuring the operational stability and performance of the various functional structures within the display panel 100.
[0264] 13 , the retaining wall 15 includes a first retaining wall 151 and a second retaining wall 152 , both of which are disposed around the periphery of the display area AA. The first retaining wall 151 is closer to the LED light-emitting unit 21 than the second retaining wall 152 .
[0265] As shown in FIG14 , in the direction between the substrate 40 and the backlight module 20 , the height of the first retaining wall 151 is smaller than that of the second retaining wall 152 , so as to further increase the diffusion range of water and oxygen penetration and further inhibit the diffusion of water and oxygen.
[0266] In the embodiments shown in Figures 13 and 14, two retaining walls 15 are used as an example for illustration, and the number, layout positions, and structural dimensions of the retaining walls 15 are not limited to this example. In other embodiments of the present application, the number, layout positions, and structural dimensions of the retaining walls 15 can be adjusted according to actual design requirements, and this application does not impose specific limitations on this.
[0267] For example, in one embodiment, the number of the retaining walls 15 is 1 to 6. By setting the number of the retaining walls 15 to 1 to 6, the number of the retaining walls 15 can be adjusted according to the actual design requirements of the display panel 100, thereby improving the packaging effect of the display panel 100 and making the display panel 100 suitable for more application scenarios.
[0268] For example, in one embodiment, the heights of the plurality of retaining walls 15 are equal.
[0269] In one embodiment, please refer to FIG14 . As shown in FIG14 , the buffer layer 13 is contained within the retaining wall 15 , and the thickness of the buffer layer 13 in the display area AA is between 30 nm and 5 μm.
[0270] For example, in the embodiment shown in FIG14 , the first retaining wall 151 is disposed around the periphery of the display area AA and has a side surface 151a facing away from the second retaining wall 152. The buffer layer 13 completely covers the display area AA and extends into the edge area NA to abut against the side surface 151a of the first retaining wall 151, thereby creating an effect of defining the boundary of the buffer layer 13 by the first retaining wall 151.
[0271] By arranging the buffer layer 13 to be accommodated in the retaining wall 15 , the retaining wall 15 can define the boundary of the buffer layer 13 , thereby achieving an overflow prevention effect for the buffer layer 13 .
[0272] In this case, the thickness of the buffer layer 13 confined within the retaining wall 15 can be increased so that the thickness of the buffer layer 13 within the display area AA is between 30 nm and 5 μm. This can reduce the difficulty of controlling the thickness of the buffer layer 13 during the manufacturing process and improve the manufacturing effect and quality of the buffer layer 13. Furthermore, increasing the thickness of the buffer layer 13 can enhance the protective effect of the buffer layer 13 on the quantum dot unit 31 and improve the planarization effect of the buffer layer 13, facilitating the production of subsequent film layers, thereby further improving the packaging effect of the packaging module 10.
[0273] In one embodiment, refer to Figure 15 , which illustrates the structure of a display panel 100 from a side perspective. As shown in Figure 15 , the area of the backlight module 20 is larger than that of the color conversion module 30. The second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and adheres to the backlight module 20. In other words, the projection of the color conversion module 30 on the backlight module 20 is contained within the backlight module 20. Within the edge region NA, the second encapsulation layer 12 is partially adhered to the backlight module 20.
[0274] For example, in the embodiment shown in FIG15 , the quantum dot pixel definition layer 32 of the color conversion module 30 extends into the edge area NA and partially covers the edge area NA. Specifically, within the edge area NA, the quantum dot pixel definition layer 32 partially covers the surface of the backlight module 20 facing away from the substrate 40. It should be understood that "partial coverage" means that the quantum dot pixel definition layer 32 does not completely cover the surface of the backlight module 20 facing away from the substrate 40, leaving the surface of the backlight module 20 facing away from the substrate 40 partially exposed.
[0275] As shown in FIG15 , within the edge area NA, the first encapsulation layer 11 is attached to the exposed surface of the quantum dot pixel definition layer 32, so that the first encapsulation layer 11 completely covers the quantum dot pixel definition layer 32. It is easy to imagine that by extending the first encapsulation layer 11 to align with the backlight module 20, the coverage area and encapsulation range of the first encapsulation layer 11 are expanded, and the encapsulation effect of the first encapsulation layer 11 on the display panel 100 can be further improved.
[0276] In the edge area NA, the second encapsulation layer 12 is bonded to the surface of the first encapsulation layer 11 facing away from the substrate 40 and the partial surface of the backlight module 20 facing away from the substrate 40, so that the second encapsulation layer 12 completely covers the first encapsulation layer 11 and covers the exposed portion of the surface of the backlight module 20.
[0277] In the embodiment shown in FIG15 , the surface of the backlight module 20 facing away from the substrate 40 is the surface of the electrode layer 24 facing away from the substrate 40, and the second encapsulation layer 12 covers the exposed portion of the surface of the backlight module 20, that is, the second encapsulation layer 12 covers the portion of the surface of the electrode layer 24 facing away from the substrate 40. It will be appreciated that the second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and is in contact with the electrode layer 24, forming a closed space between the second encapsulation layer 12 and the electrode layer 24. This fully encapsulates the functional structure located between the second encapsulation layer 12 and the electrode layer 24, thereby further improving the encapsulation effect of the encapsulation module 10.
[0278] By arranging the projection of the color conversion module 30 on the backlight module 20 to be contained within the backlight module 20, the second encapsulation layer 12 can extend to adhere to the backlight module 20, completely encapsulating the entire color conversion module 30. Furthermore, the adhesion of the second encapsulation layer 12 to the backlight module 20 increases the vertical distance for water vapor from the edge to diffuse into the interior of the display panel 100, which helps inhibit the diffusion of water and oxygen, and reduces the water vapor film permeability of the display panel 100. This further reduces the risk of quantum dot units 31 failing due to water and oxygen corrosion, thereby improving the operational stability of the quantum dot units 31.
[0279] By providing the second encapsulation layer 12 in contact with the backlight module 20 , a guard ring structure can be formed around the display panel 100 to prevent the edge collapse effect from adversely affecting the edge encapsulation effect of the encapsulation module 10 during subsequent cutting of the display panel 100 .
[0280] In one embodiment, referring to FIG. 16 , FIG. 16 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. In the embodiment shown in FIG. 16 , when the second encapsulation layer 12 completely encapsulates the color conversion module 30 and is attached to the surface of the backlight module 20 facing away from the substrate 40, a retaining wall 15 is provided around the periphery of the display area AA.
[0281] 16 , the barrier wall 15 is located in the edge area NA and on the side of the quantum dot pixel definition layer 32 facing away from the substrate 40 . The first encapsulation layer 11 completely covers the barrier wall 15 .
[0282] Among them, the layout quantity, position, structural dimensions, etc. of the retaining wall 15 can be the same as the layout quantity, position, structural dimensions, etc. of the retaining wall 15 in the embodiment shown in Figure 14, and the beneficial effects produced are also the same as the retaining wall 15 in the embodiment shown in Figure 14, which will not be repeated here.
[0283] In one embodiment, referring to FIG. 17 , FIG. 17 is a schematic diagram illustrating the structure of a display panel 100 from a perspective of one side. In the embodiment shown in FIG. 17 , when the second encapsulation layer 12 completely encapsulates the color conversion module 30 and is attached to the surface of the backlight module 20 facing away from the substrate 40, an optical function module 50 can be disposed on the side of the encapsulation module 10 facing away from the substrate 40 to adjust and control the shape of light emitted by the backlight module 20 or the color conversion module 30.
[0284] The number and position of the optical function module 50 can be the same as the number and position of the optical function module 50 in the embodiments shown in Figures 10 to 12, and the beneficial effects produced are also the same as those of the optical function module 50 in the embodiments shown in Figures 10 to 12, and will not be repeated here.
[0285] The second encapsulation layer 12 is partially attached to the surfaces of the functional structures in the backlight module 20 . The second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and is attached to at least one of the electrode layer 24 , the filling layer 23 , the bonding layer 25 and the driving backplane 22 .
[0286] In one embodiment, referring to FIG. 18 , FIG. 18 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. For example, in the embodiment shown in FIG. 18 , the color conversion module 30 and the projections of the electrode layer 24 , bonding layer 25 , and filling layer 23 of the backlight module 20 on the driver backplane 22 are all housed within the driver backplane 22, such that the surface of the driver backplane 22 facing away from the substrate 40 is exposed.
[0287] In the edge area NA, the first encapsulation layer 11 is adhered to the exposed surfaces of the quantum dot pixel definition layer 32, the electrode layer 24, the filling layer 23, and the bonding layer 25, and is adhered to the portion of the surface of the driving backplane 22 facing away from the substrate 40, so as to form a closed space between the driving backplane 22 and the first encapsulation layer 11, and further improve the encapsulation effect of the first encapsulation layer 11 on the display panel 100 by expanding the coverage area and encapsulation range of the first encapsulation layer 11.
[0288] In the edge area NA, the second encapsulation layer 12 is adhered to the exposed surface of the first encapsulation layer 11 and partially adhered to the surface of the driving backplate 22 facing away from the substrate 40 .
[0289] By arranging the second encapsulation layer 12 to be partially attached to the driver backplane 22, a closed space is formed between the second encapsulation layer 12 and the driver backplane 22, thereby completely encapsulating the functional structure of the display surface 100 located between the second encapsulation layer 12 and the driver backplane 22. That is, when the second encapsulation layer 12 is attached to the driver backplane 22, the multiple LED light-emitting units 21, the metal traces arranged on the driver backplane 22, and the pads used for bonding to the LED light-emitting units 21 can all be fully encapsulated, preventing the metal traces and pads from being corroded by water and oxygen, causing oxidation reactions, etc., which would affect the operating reliability of the backlight module 20. By arranging the second encapsulation layer 12 to be partially attached to the driver backplane 22, the encapsulation effect of the encapsulation module 10 can be further improved.
[0290] By setting the second packaging layer 12 to partially adhere to the driving backplane 22, a protective ring structure can be formed around the display panel 100, thereby increasing the vertical distance for the edge water vapor to diffuse into the interior of the display panel 100 and inhibiting the diffusion of water and oxygen, thereby reducing the adverse effects that may be caused by the edge collapse effect on the edge packaging effect of the packaging module 10 during the cutting process of the display panel 100.
[0291] In one embodiment, referring to FIG. 19 , FIG. 19 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. In the embodiment shown in FIG. 18 , the color conversion module 30 and the projections of the electrode layer 24 and the filling layer 23 of the backlight module 20 on the bonding layer 25 are all contained within the bonding layer 25, such that the bonding layer 25 is exposed on the surface facing away from the substrate 40.
[0292] In the edge area NA, the first encapsulation layer 11 is adhered to the exposed surfaces of the quantum dot pixel definition layer 32, the electrode layer 24, and the filling layer 23, and is adhered to the surface of the bonding layer 25 facing away from the substrate 40, so as to completely encapsulate the various functional structures between the bonding layer 25 and the first encapsulation layer 11, further improving the encapsulation effect of the first encapsulation layer 11 on the display panel 100.
[0293] In the edge area NA, the second encapsulation layer 12 is attached to the exposed surface of the first encapsulation layer 11 and partially attached to the surface of the bonding layer 25 facing away from the substrate 40 .
[0294] By arranging the second encapsulation layer 12 to be partially adhered to the bonding layer 25, a closed space is formed between the second encapsulation layer 12 and the bonding layer 25, so as to completely encapsulate the functional structure of the display surface 100 located between the second encapsulation layer 12 and the bonding layer 25. That is, when the second encapsulation layer 12 is adhered to the bonding layer 25, the multiple LED light-emitting units 21 can be completely encapsulated, thereby preventing the multiple LED light-emitting units 21 from being corroded by water and oxygen and causing oxidation and other reactions, which may affect the working reliability of the backlight module 20.
[0295] In one embodiment, within the edge area NA, the second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and is in contact with the filling layer 23. It is understood that by partially contacting the second encapsulation layer 12 with the filling layer 23, a closed space is formed between the second encapsulation layer 12 and the filling layer 23, thereby completely encapsulating the functional structure of the display panel 100 located between the second encapsulation layer 12 and the filling layer 23, further improving the encapsulation effect of the encapsulation module 10.
[0296] By setting the second packaging layer 12 to partially adhere to the filling layer 23, a protective ring structure can be formed around the display panel 100, thereby increasing the vertical distance for the edge water vapor to diffuse into the interior of the display panel 100 and inhibiting the diffusion of water and oxygen, thereby reducing the adverse effects that may be caused by the edge collapse effect on the edge packaging effect of the packaging module 10 during the cutting process of the display panel 100.
[0297] In one embodiment, in the edge area NA, the second encapsulation layer 12 extends beyond the edge of the first encapsulation layer 11 and adheres to more than one of the driving backplane 22 , the filling layer 23 and the electrode layer 24 .
[0298] In the embodiment of the present application, the first encapsulation layer 11 and the second encapsulation layer 12 are adhered to one or more of the electrode layer 24, the filling layer 23, the bonding layer 25 and the driving backplane 22 in the backlight module 20 as an example for illustrative description, and it is not limited to that the first encapsulation layer 11 and the second encapsulation layer 12 can be adhered to one or more of the electrode layer 24, the filling layer 23, the bonding layer 25 and the driving backplane 22 in the backlight module 20.
[0299] In order to achieve different light output requirements, other functional structural layers can be provided in the backlight module 20. In other embodiments of the present application, a first packaging layer 11 and a second packaging layer 12 can be provided to adhere to other functional structural layers in the backlight module 20, thereby achieving different packaging effects of the packaging module 10 on the display panel 100. The embodiments of the present application do not make specific limitations on this.
[0300] In one embodiment, referring to FIG20 , FIG20 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. As shown in FIG20 , the projection of the backlight module 20 on the substrate 40 is contained within the substrate 40 , and the second encapsulation layer 12 is partially attached to the substrate 40 in the edge region NA.
[0301] For example, in the embodiment shown in FIG20 , the projections of the color conversion module 30 and the backlight module 20 on the substrate 40 are both contained within the substrate 40, leaving a portion of the surface of the substrate 40 exposed. Within the edge region NA, the first encapsulation layer 11 adheres to the exposed surfaces of the quantum dot pixel definition layer 32, the electrode layer 24, the filling layer 23, the bonding layer 25, and the driver backplane 22, and adheres to the exposed portion of the surface of the substrate 40.
[0302] It is understandable that by extending the first encapsulation layer 11 to be in contact with the substrate 40 to expand the coverage area and encapsulation range of the first encapsulation layer 11 , the encapsulation effect of the first encapsulation layer 11 on the display panel 100 can be further improved.
[0303] In the edge area NA, the second encapsulation layer 12 is attached to the exposed surface of the first encapsulation layer 11 and to a portion of the exposed surface of the substrate 40 .
[0304] By arranging the projection of the backlight module 20 on the substrate 40 to be contained within the substrate 40, the second encapsulation layer 12 can be extended to fit with the substrate 40, thereby enabling the second encapsulation layer 12 to achieve a complete encapsulation effect of the color conversion module 30 and the backlight module 20, thereby expanding the range of the second encapsulation layer 12 to completely encapsulate various functional structures in the display panel 100, thereby further improving the encapsulation effect of the encapsulation module 10 and improving the working performance of the display panel.
[0305] By attaching the second encapsulation layer 12 to the substrate 40 , a protective ring structure can be formed around the display panel 100 , further increasing the vertical distance for edge water vapor to diffuse into the interior of the display panel 100 , and further reducing the impact of subsequent cutting on the edge encapsulation of the encapsulation module 10 .
[0306] In one embodiment, referring to Figures 21 and 22 , Figure 21 is a schematic diagram of the structure of the display panel 100 from a side perspective, and Figure 22 is an enlarged schematic diagram of the partial structure of the display panel 100 at position E in the embodiment of Figure 21 . As shown in Figure 21 , a first distance W1 is defined between the color conversion module 30 and the outer edge of the substrate 40, and a second distance W2 is defined between the backlight module 20 and the outer edge of the substrate 40. The first distance W1 is greater than the second distance W2, and the packaging module 10 has a stepped shape within the edge region NA.
[0307] During the preparation of the backlight module 20 and the color conversion module 30, the etching angles of the filling layer 23 and the quantum dot pixel definition layer 32 in the edge area NA are set to be different, so that the first encapsulation layer 11 and the second encapsulation layer 12 are in a stepped shape around the filling layer 23 and the quantum dot pixel definition layer 32.
[0308] For example, in the embodiment shown in FIG20 , a first distance W1 between the color conversion module 30 and the outer edge of the substrate 40 is greater than a second distance W2 between the backlight module 20 and the outer edge of the substrate 40. The projection of the color conversion module 30 on the backlight module 20 is contained within the backlight module 20, such that when the first encapsulation layer 11 and the second encapsulation layer 12 encapsulate the display panel 100 in a direction from the quantum dot pixel definition layer 32 toward the substrate 40, the first encapsulation layer 11 and the second encapsulation layer 12 form a multi-step structure within the edge region NA.
[0309] It can be understood that by setting the first distance W1 to be greater than the second distance W2, and the packaging module 10 to be stepped in the edge area NA, the distance for the edge water vapor to diffuse to the inside of the display panel 100 can be increased, thereby forming an effect of inhibiting the diffusion of water and oxygen, further reducing the water vapor film penetration rate of the display panel 100, and improving the packaging effect of the packaging module 10 on the display panel 100.
[0310] The packaging module 10 has a stepped shape in the edge area NA, which increases the bonding area between the film layers of the packaging module 10 and improves the adhesion effect between the film layers, thereby reducing the risk of peeling between the film layers during the cutting process and improving the edge packaging effect of the packaging module 10.
[0311] In the embodiments shown in Figures 21 and 22 , the packaging module 10 is described as having stepped structures around both the color conversion module 30 and the backlight module 20. However, this does not limit the packaging module 10 to having stepped structures around both the color conversion module 30 and the backlight module 20. The location of the stepped structures within the edge area NA of the packaging module 10 can be adjusted based on actual design requirements and is not specifically limited in this embodiment.
[0312] For example, in one embodiment, the packaging module 10 is in a stepped shape around the color conversion module 30 .
[0313] For example, in one embodiment, the packaging module 10 is in a stepped shape around the backlight module 20 .
[0314] In one embodiment, referring also to FIG22 , the distance between the outer edge of the package module 10 and the substrate 40 is between 50 μm and 150 μm. In the embodiment shown in FIG22 , the distance between the outer edge of the package module and the substrate 40 is a third distance W3, which is between 50 μm and 150 μm.
[0315] It is understandable that by setting the third distance W3 between 50μm and 150μm, the edge collapse effect can be avoided from damaging the film layer of the packaging module 10 during the cutting process of the display panel 100, such as causing peeling between the film layers or affecting the edge packaging effect of the packaging module 10.
[0316] By setting the distance between the outer edges of the packaging module 10 and the substrate 40 to be between 50 μm and 150 μm, the edge packaging effect of the packaging module 10 can be ensured, and the working performance of the display panel 100 can be further improved.
[0317] In one embodiment, referring also to FIG. 22 , the distance between the outer edges of the packaging module 10 and the backlight module 20 is between 50 μm and 100 μm. In the embodiment shown in FIG. 22 , the distance between the outer edges of the packaging module 10 and the backlight module 20 is a fourth distance W4, which is between 50 μm and 100 μm. This fourth distance W4 protects the sidewalls of the driver backplane 22 and enhances the edge sealing of the packaging module 10.
[0318] In one embodiment, referring also to FIG. 22 , the distance between the first encapsulation layer 11 and the outer edge of the backlight module 20 is greater than 50 μm. In the embodiment shown in FIG. 22 , the distance between the first encapsulation layer 11 and the outer edge of the backlight module 20 is a fifth distance W5. This fifth distance W5 is greater than 50 μm, ensuring that the second encapsulation layer 12 effectively covers the edge of the first encapsulation layer 11, thereby further improving the edge encapsulation effect of the encapsulation module 10.
[0319] In one embodiment, in the edge area NA, the step structure formed by the first encapsulation layer 11 has a height ranging from 2 μm to 10 μm and a width ranging from 0.2 μm to 50 μm.
[0320] In one embodiment, in the edge area NA, the step structure formed by the second encapsulation layer 12 has a height ranging from 2 μm to 10 μm and a width ranging from 0.2 μm to 50 μm.
[0321] It is understood that the "height" of the step structure is the distance between the step shape formed by the first encapsulation layer 11 or the second encapsulation layer 12 in the edge area NA and the substrate 40 and the backlight module 20. The "width" of the step structure is the distance between the step shape formed by the first encapsulation layer 11 or the second encapsulation layer 12 in the edge area NA and the plane of the display panel 100.
[0322] In one embodiment, referring to FIG. 23 , FIG. 23 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. As shown in FIG. 23 , the packaging module 10 includes a cover assembly 16 , which includes a packaging cover 161 and a support ring 162 . The packaging cover 161 is located on the side of the first packaging layer 11 facing away from the buffer layer 13 , and is spaced apart from the first packaging layer 11 . The support ring 162 is disposed around the periphery of the first packaging layer 11 and is used to support the packaging cover 161 . The support ring 162 and the packaging cover 161 work together to encapsulate the display panel 100 .
[0323] In the embodiment shown in FIG23 , a support ring 162 is fixed to the color conversion module 30 within the edge region NA. Exemplarily, the quantum dot pixel definition layer 32 of the color conversion module 30 completely covers the edge region NA. The support ring 162 is connected between the quantum dot pixel definition layer 32 and the encapsulation cover plate 161 within the edge region NA, thereby completely sealing the first encapsulation layer 11.
[0324] By providing a support ring 162 fixed on the color conversion module 30 , the encapsulation cover plate 161 and the support ring 162 cooperate with each other to encapsulate the first encapsulation layer 11 and the edge of the first encapsulation layer 11 , thereby further encapsulating the display panel 100 .
[0325] In the embodiment shown in Figure 23, by arranging the support ring 162 in the edge area NA, a supporting effect can be formed on the packaging cover plate 161, so that the packaging cover plate 161 and the first packaging layer 11 are spaced apart from each other, thereby preventing the packaging cover plate 161 from squeezing the first packaging layer 11, thereby ensuring the packaging effect of the first packaging layer 11.
[0326] The cooperation between support ring 162 and encapsulation cover plate 161 also achieves the effect of encapsulating first encapsulation layer 11. Furthermore, based on first encapsulation layer 11, display panel 100 can be further encapsulated, achieving a water vapor film transmission rate of display panel 100 of less than 5×10-6 g / m2·day. Providing cover plate assembly 16 to encapsulate first encapsulation layer 11 and further encapsulate display panel 100 reduces the difficulty of the encapsulation process and avoids potential problems such as peeling and fracture in multi-layer structures.
[0327] In one embodiment, the packaging cover 161 may be made of transparent glass.
[0328] In one embodiment, the material of the support ring 162 includes any one of glass paste, magnesium oxide, calcium oxide, barium oxide, lithium oxide, sodium oxide, potassium oxide, zinc oxide, aluminum oxide, tin oxide, iron oxide, copper oxide, tungsten oxide, boron lead glass, tin phosphate glass, and vanadate glass.
[0329] The materials of glass paste, magnesium oxide, calcium oxide, barium oxide, lithium oxide, sodium oxide, potassium oxide, zinc oxide, aluminum oxide, tin oxide, iron oxide, copper oxide, tungsten oxide, boron lead glass, tin phosphate glass, and vanadate glass can achieve the effects of solidification and water and oxygen barrier after being irradiated by laser or infrared, so that the support ring 162 can work together with the packaging cover plate 161 to support the packaging cover plate 161 and achieve good water and oxygen barrier effect.
[0330] FIG23 illustrates an example in which the support ring 162 is located between the color conversion module 30 and the package cover 161. This does not limit the placement of the support ring 162 to this example. In other embodiments of the present application, the placement of the support ring 162 can be adjusted based on the actual design of the functional structures within the display panel 100.
[0331] In one embodiment, referring to Fig. 24, Fig. 24 is a schematic structural diagram of a display panel 100 from a side perspective. As shown in Fig. 24, the support ring 162 is fixed to the backlight module 20 in the edge area NA.
[0332] In the embodiment shown in FIG24 , the projection of the color conversion module 30 on the backlight module 20 is housed within the backlight module 20, such that a portion of the surface of the backlight module 20 facing away from the substrate 40 is exposed. The first encapsulation layer 11 covers the quantum dot pixel definition layer 32 of the color conversion module 30, and the first encapsulation layer 11 is at least partially attached to the surface of the backlight module 20 facing away from the substrate 40.
[0333] The surface of the electrode layer 24 facing away from the substrate 40 is configured as the surface of the backlight module 20 facing away from the substrate 40 . The support ring 162 is connected between the backlight module 20 and the package cover 161 , that is, the support ring 162 is connected between the electrode layer 24 and the package cover 161 .
[0334] By setting a support ring 162 fixed on the backlight module 20, the packaging cover 161 and the support ring 162 cooperate with each other to completely encapsulate the entire color conversion module 30, further reducing the risk of the quantum dot unit 31 being corroded by water and oxygen and failing, thereby improving the working stability of the quantum dot unit 31.
[0335] In one embodiment, referring to Figure 25 , Figure 25 is a schematic structural diagram of a display panel 100 from a side perspective. As shown in Figure 25 , in the edge area NA, the support ring 162 is fixed to the driving backplane 22 .
[0336] In the embodiment shown in FIG25 , the projections of the color conversion module 30, electrode layer 24, filling layer 23, and bonding layer 25 on the driver backplane 22 are all contained within the driver backplane 22, exposing at least a portion of the surface of the driver backplane 22. A first encapsulation layer 11 covers the quantum dot pixel definition layer 32 of the color conversion module 30 and the electrode layer 24, filling layer 23, and bonding layer 25 of the backlight module 20, with the first encapsulation layer 11 at least partially attached to the surface of the driver backplane 22 facing away from the substrate 40.
[0337] The support ring 162 is connected between the driver backplate 22 and the packaging cover plate 161. By providing the support ring 162 connected between the driver backplate 22 and the packaging cover plate 161, the packaging cover plate 161 and the support ring 162 cooperate with each other to completely encapsulate the entire color conversion module 30 and the multiple LED light-emitting units 21 in the backlight module 20, further expanding the packaging range of the cover plate assembly 16 and improving the packaging effect of the packaging module 10.
[0338] Among them, in the embodiment shown in Figure 25, the support ring 162 is fixed on the driving backplane 22 as an example for exemplary introduction, and it is not limited to that the support ring 162 can only be connected to the driving backplane 22 in the backlight module 20, that is, the support ring 162 can also be connected to other functional structural layers in the backlight module 20 to achieve different packaging effects and meet different design requirements.
[0339] In other embodiments of the present application, the support ring 162 may also be connected to other functional structural layers in the backlight module 20 .
[0340] For example, in one embodiment, referring to FIG26 , FIG26 is a schematic structural diagram of a display panel 100 from a side perspective in one embodiment. In the edge region NA, the support ring 162 is fixed on the bonding layer 25 .
[0341] For example, in one embodiment, the support ring 162 is fixed on the filling layer 23 in the edge area NA.
[0342] In one embodiment of the present application, referring to FIG27 , FIG27 is a schematic diagram showing the structure of the display panel 100 from a side perspective in one embodiment. In the edge region NA, the support ring 162 is fixed on the substrate 40 .
[0343] For example, in the embodiment shown in FIG. 27 , the projections of the backlight module 20 and the color conversion module 30 on the substrate 40 are both accommodated on the substrate 40 , so that at least a portion of the surface of the substrate 40 is exposed outward.
[0344] The first encapsulation layer 11 covers the backlight module 20 and the color conversion module 30 , and is at least partially attached to the substrate 40 .
[0345] The support ring 162 is connected between the substrate 40 and the packaging cover plate 161, so that the support ring 162 and the packaging cover plate 161 can completely encapsulate the color conversion module 30 and the backlight module 20, thereby expanding the scope of complete encapsulation of the various functional structures in the display panel 100 by the cover plate assembly 16, so as to further improve the packaging effect of the packaging module 10 and improve the working performance of the display panel 100.
[0346] In one embodiment, referring to FIG28 , FIG28 is a schematic structural diagram of a display panel 100 from a side perspective. In the embodiment shown in FIG28 , when the cover assembly 16 is used to encapsulate the first encapsulation layer 11 and further encapsulate the display panel 100, a retaining wall 15 may be provided within the edge region NA.
[0347] The layout position, structural setting and layout number of the retaining wall 15 are the same as the layout position, structural setting and layout number of the retaining wall 15 in the embodiment shown in Figure 14, and the technical effect achieved is also the same as the retaining wall 15 in the embodiment shown in Figure 14, which will not be repeated here.
[0348] The ALD encapsulation film layer of quantum dot cells is typically produced using metal-organic precursors. If the encapsulation film layer is directly applied to the surface of the quantum dot cells, the metal-organic precursors may chemically react with the quantum dot cells, damaging the surface of the quantum dots. This can reduce the optical performance and light extraction efficiency of the quantum dot layer, and affect the operating stability of the quantum dot cells. This reduced performance of the quantum dot cells will directly affect the display quality of the display panel, degrading the user experience.
[0349] The packaging module 10 of the display panel 100 of the present application sets a buffer layer 13 between the color conversion module 30 and the first packaging layer 11, and sets the buffer layer 13 to cover the display area AA, so that the buffer layer 13 can protect each quantum dot unit 31, thereby preventing the metal organic precursor in the preparation process of the first packaging layer 11 from chemically reacting with the quantum dot unit 31 during the subsequent preparation of the first packaging layer 11, thereby preventing the surface of the light-emitting surface of the quantum dot unit 31 from being damaged, thereby reducing the stability and effectiveness of the quantum dot unit 31.
[0350] By providing the buffer layer 13 to cover the display area AA, a preliminary encapsulation effect can be achieved for each quantum dot unit 31 , further improving the encapsulation effect of each quantum dot unit 31 .
[0351] By arranging the buffer layer 13 between the color conversion module 30 and the first encapsulation layer 11, the surface of each quantum dot unit 31 facing away from the substrate 40 can be flattened, facilitating the subsequent preparation of other film layers and improving the preparation effect and quality of other film layers.
[0352] By providing the first encapsulation layer 11 to cover the buffer layer 13 and partially extend to the edge area NA, the encapsulation module 10 can realize the encapsulation function of the display panel 100, thereby preventing water and oxygen from corroding the various functional structures within the display panel 100, so that the water vapor film transmission rate of the display panel 100 is less than 5×10-6g / m2·day.
[0353] The quantum dot unit 31 is protected by the buffer layer 13, and the display panel 100 is encapsulated by the first encapsulation layer 11 to prevent water and oxygen from corroding the quantum dot unit 31 and other functional structures in the display panel 100. This can ensure the stability and effectiveness of the quantum dot unit 31, improve the picture display effect of the display panel 100, and thereby improve the user experience.
[0354] Furthermore, because the electronic device 200 of the present application uses the display panel 100 in any of the above embodiments, the electronic device 200 of the present application has all the possible beneficial effects of the display panel 100 in any of the above embodiments.
[0355] The display panel 100 of the present application can be a Micro-LED display panel and implement wafer-level packaging, that is, multiple display panels 100 can be simultaneously produced and cut on the same wafer. For example, refer to Figures 29 to 31 . Figure 29 is a schematic diagram of the process for preparing an LED light-emitting unit 21 in one embodiment. Figure 30 is a schematic diagram of the structure of the backlight module 20 formed at a side viewing angle in the embodiment shown in Figure 29 . Figure 31 is a schematic diagram of the structure of the backlight module 20 at a side viewing angle at the FF position in the embodiment shown in Figure 30 .
[0356] In the embodiment shown in FIG29 , an N-type layer, a light-emitting layer, and a P-type layer are sequentially grown on the same growth substrate in regions corresponding to multiple display panels 100. The N-type and P-type layers work together to drive the light-emitting layer to emit light outward. A bonding layer is also provided on the side of the P-type layer facing away from the growth substrate. The N-type, light-emitting, and P-type layers are constructed as an epitaxial wafer.
[0357] The epitaxial wafer is then bonded to the driver backplane 22 and the growth substrate is removed. There are multiple driver backplanes 22, each located on the same substrate. The multiple driver backplanes 22 correspond to the positions of the multiple display panels 100.
[0358] Furthermore, a photolithography process can be used, but is not limited to, to etch the driver backplane 22 to form a plurality of LED light-emitting unit groups J, with each LED light-emitting unit group J being arranged spaced apart from each other. Each LED light-emitting unit group J includes a plurality of LED light-emitting units 21 arranged in an array, with each LED light-emitting unit 21 spaced apart from each other.
[0359] In the embodiment shown in FIG. 29 , the spaces between the LED light-emitting units 21 are filled with a filling layer 23 to improve the bonding efficiency and bonding effect of the LED light-emitting units 21 .
[0360] FIG29 illustrates an exemplary embodiment of preparing an LED light-emitting unit 21, but does not limit the preparation method and process of the LED light-emitting unit 21 in the embodiment of the present application to this embodiment. In other embodiments of the present application, the preparation method and process of the LED light-emitting unit 21 can be adjusted according to the actual design and process conditions, and this application does not specifically limit this. In the embodiment shown in FIG29, the structure and shape of the LED light-emitting unit 21 are exemplarily displayed, but do not represent the actual structure and shape of the LED light-emitting unit 21.
[0361] As shown in FIG30 , a plurality of LED light emitting unit groups J are formed on the driving backplane 22 . Each LED light emitting unit group J is used to provide a light source for each display panel to realize picture display, that is, one LED light emitting unit group J corresponds to one display panel.
[0362] In the embodiment shown in Figure 30, a possible arrangement number and arrangement method of the LED light-emitting unit group J is taken as an example for illustrative explanation, but the arrangement number and arrangement method of the LED light-emitting unit group J arranged on the driving backplane 22 are not limited to this. In other embodiments of the present application, the arrangement number and arrangement method of the LED light-emitting unit group J bonded to the driving backplane 22 can be adjusted according to actual needs, and this application does not limit this.
[0363] Referring to FIG32 , FIG32 is a schematic diagram illustrating a process for preparing the display panel 100 of the present application in one embodiment. To clearly illustrate the schematic diagram of the process for preparing the display panel 100 of the present application, the embodiment shown in FIG32 is described using the preparation of the display panel 100 of the embodiment shown in FIG8 as an example.
[0364] For example, in the embodiments shown in FIG. 32 (a) and FIG. 32 (b), a backlight module 20 is provided. A quantum dot pixel definition layer 32 is formed on the surface of the backlight module 20, and a plurality of pixel holes 33 are simultaneously processed and formed. Each pixel hole 33 is positioned corresponding to an LED light-emitting unit 21 so that light emitted by each LED light-emitting unit 21 can be directed into the corresponding pixel hole 33.
[0365] The material of the quantum dot pixel definition layer 32 includes, but is not limited to, at least one of aluminum (Al), silver (Ag), platinum (Pt), gold (Au), copper (Cu), titanium (Ti), nickel (Ni), and chromium (Cr). By configuring the quantum dot pixel definition layer 32 to be a metal material with high thermal conductivity and high reflectivity, the operating temperature of the quantum dot units 31 can be reduced, the sidewall reflectivity of the quantum dot units 31 can be increased, and the luminous efficiency and effect of the backlight module 20 can be increased. Furthermore, crosstalk between adjacent quantum dot units 31 can be reduced, and the light angle can be shortened.
[0366] In the embodiment shown in FIG32( c ), the passivation layer 34 may be formed on the inner wall of the pixel hole 33 by, but is not limited to, atomic layer deposition or sputtering. The passivation layer 34 may be made of any of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon dioxide (SiO 2 ), silicon nitride (SiN x ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), silicon carbonitride (SiCN), boron nitride (BN), and silicon oxynitride (SiON).
[0367] In the embodiment shown in (d) of FIG. 32 , the quantum dot unit 31 may be prepared in each pixel hole 33 by, but is not limited to, spin coating, drop coating, inkjet printing, QD-PR lithography, or QD layer electrochemical deposition.
[0368] In the embodiment shown in (e) of FIG. 32 , after the quantum dot unit 31 is prepared in each pixel hole 33 , a buffer layer 13 is prepared on the surface of the quantum dot unit 31 facing away from the backlight module 20 to protect the quantum dot unit 31 .
[0369] In the embodiment shown in (f) of FIG. 32 , after the buffer layer 13 is prepared, the first encapsulation layer 11 is prepared on the surface of the buffer layer 13 facing away from the backlight module 20 .
[0370] In the embodiment shown in (g) of FIG. 32 , after the first encapsulation layer 11 is prepared, the second encapsulation layer 12 is prepared on the surface of the first encapsulation layer 11 facing away from the backlight module 20 .
[0371] After the preparation of the buffer layer 13, the first encapsulation layer 11 and the second encapsulation layer 12 is completed, the preparation of the encapsulation module 10 is completed, and the functional structures in the display panel 100 can be encapsulated and protected to prevent water and oxygen from corroding the functional structures in the display panel 100, so that the display panel 100 can achieve a good picture display effect.
[0372] Finally, the base substrate is cut to obtain multiple display panels 100 fabricated on the same wafer. The base substrate structure in each display panel 100 serves as the substrate 40. The distance between the edge of the packaging module 10 and the substrate 40 can be understood as the width of the scribe line left for the base substrate during chip-scale packaging of the display panels 100.
[0373] In the embodiment shown in FIG32 , a possible preparation method of the display panel 100 is used as an example for illustrative description, but the preparation method of the display panel 100 is not limited to this. The preparation method of the display panel 100 of the present application can be adjusted according to actual needs, and the embodiment of the present application does not make specific limitations on this.
[0374] In one embodiment, referring to FIG33 , FIG33 is a schematic diagram illustrating the structure of a display panel 100 from a side perspective. In the embodiment shown in FIG33 , multiple display panels 100 are simultaneously fabricated on a substrate, and the packaged display panels 100 are then cut to form display panels of different sizes, thereby meeting the different display requirements of the electronic device 200.
[0375] Of course, the above-mentioned embodiments can be applied individually or in combination. The above is the preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.
Claims
1. A display panel, characterized in that: The display panel includes a substrate, a backlight module, a color conversion module and a packaging module stacked in sequence; The backlight module includes a plurality of LED light-emitting units arranged at intervals, and the size of each LED light-emitting unit is between 1 μm and 50 μm; the color conversion module includes a plurality of quantum dot units, and the plurality of quantum dot units are arranged in a one-to-one correspondence with the plurality of LED light-emitting units, and each quantum dot unit is used to convert the wavelength of light emitted by the corresponding LED light-emitting unit; The encapsulation module includes an encapsulation layer and a buffer layer, the encapsulation layer covers the color conversion module, the buffer layer is located between the encapsulation layer and the color conversion module, the area of the buffer layer is larger than the area of the multiple quantum dot units, and the buffer layer is used to protect the multiple quantum dot units.
2. The display panel according to claim 1, wherein: The encapsulation layer includes a first encapsulation layer. The area of the first encapsulation layer is larger than that of the buffer layer. The first encapsulation layer extends beyond an edge of the buffer layer and is in contact with the color conversion module.
3. The display panel according to claim 2, wherein: The packaging module includes a second packaging layer, which is adhered to the side of the first packaging layer facing away from the buffer layer. The area of the second packaging layer is larger than that of the first packaging layer, and the area of the substrate is larger than that of the color conversion module. The second packaging layer extends beyond the edge of the first packaging layer and is adhered to the substrate.
4. The display panel according to claim 3, wherein: The backlight module includes a stacked driving backplane, a filling layer and an electrode layer, the filling layer is located between the driving backplane and the electrode layer, the LED light-emitting unit is embedded in the filling layer, the area of the backlight module is larger than the area of the first packaging layer, and the edge of the second packaging layer exceeds the first packaging layer and is also bonded to one or more of the driving backplane, the filling layer and the electrode layer.
5. The display panel according to claim 3 or 4, characterized in that: The color conversion module includes a quantum dot pixel definition layer, and each of the quantum dot units is embedded in the quantum dot pixel definition layer. The area of the quantum dot pixel definition layer is larger than the area of the first encapsulation layer, and the second encapsulation layer extends beyond the edge of the first encapsulation layer and is also adhered to the quantum dot pixel definition layer.
6. The display panel according to claim 2, wherein: The packaging module includes a cover plate assembly, which includes a packaging cover plate and a support ring. The packaging cover plate is located on the side of the first packaging layer away from the buffer layer and is spaced apart from the first packaging layer. The support ring is arranged around the periphery of the first packaging layer and supports the packaging cover plate. The support ring and the packaging cover plate work together to encapsulate the display panel.
7. The display panel according to claim 6, wherein: The supporting ring is fixed on the color conversion module, the backlight module or the substrate.
8. The display panel according to any one of claims 2 to 7, wherein: The first encapsulation layer is adhered to one or more of the color conversion module, the backlight module and the substrate.
9. The display panel according to any one of claims 2 to 8, wherein: Along the plane direction of the display panel, the distance between the packaging module and the outer edge of the substrate is between 50 μm and 150 μm.
10. The display panel according to any one of claims 2 to 9, wherein: The material of the first encapsulation layer is one of aluminum oxide, aluminum nitride, zinc oxide, and zirconium oxide.
11. The display panel according to any one of claims 2 to 10, characterized in that: The packaging module includes at least one retaining wall, which is arranged around the periphery of the plurality of quantum dot units, and the first packaging layer covers the retaining wall.
12. The display panel according to claim 11, wherein: The buffer layer is contained in the retaining wall, and the thickness of the buffer layer is between 30 nm and 5 μm.
13. The display panel according to claim 1, wherein The color conversion module includes a quantum dot pixel definition layer, wherein a plurality of mutually spaced pixel holes are formed in the quantum dot pixel definition layer, and each quantum dot unit is respectively embedded in one of the pixel holes; A passivation layer is provided on the inner wall of each pixel hole, and the passivation layer is used to prevent charge transfer between the quantum dot pixel definition layer and the quantum dot unit.
14. An electronic device, characterized in that: The invention comprises a housing and a display panel according to any one of claims 1 to 13, wherein the display panel is embedded in the housing, and the housing is used to support and protect the display panel.