Mask manufacturing method and system

Abstract

A mask manufacturing method and system. The method comprises: performing pulse laser deposition on the same process machine table by using pulse laser, so as to manufacture a blank mask; and further performing laser direct writing on the blank mask by using pulse laser generated by the same laser device, so as to acquire a mask having a required pattern. Masks can be automatically manufactured, the process is simple, the manufacturing cost is low, the production efficiency is high, the masks have stable performance and a high yield, the device costs for process machine tables are low, and the degree of integration is high.

Description

Mask manufacturing method and system Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and in particular to a mask manufacturing method and system. Background Art

[0002] With the development of artificial intelligence (AI), the fifth generation of mobile communication technology (5 th With the development of innovative technologies such as 5G, big data, artificial intelligence and Internet of Things (AioT), and autonomous driving, the reduction of device feature sizes in microprocessors (CPUs) and dynamic random access memories (DRAMs) has accelerated and deviated from Moore's Law, which has invisibly increased the difficulty of preparing semiconductor devices.

[0003] Currently, photolithography is the most complex and challenging process in semiconductor manufacturing. Its primary principle is to transfer the pattern on a mask to a substrate using photoresist (also known as photoresist) under the influence of light. Furthermore, with the increasing integration density and shrinking feature sizes of semiconductor devices, the number of masks required for semiconductor device production is also increasing. For example, at a 10nm process node, over 80 masks are required to complete the production of a single chip. Clearly, reducing mask manufacturing costs can reduce the production cost of semiconductor devices.

[0004] However, the mainstream manufacturing technology for mask blanks currently relies on planar magnetron sputtering deposition. Due to the interaction of the orthogonal electromagnetic fields on the sputtering ions, the sputtering target undergoes uneven erosion during sputtering, resulting in generally low target utilization of around 30%, which also impacts the manufacturing yield of mask blanks. In recent years, improvements to magnetron sputtering equipment have increased target utilization to around 50%. Furthermore, after target atoms are dislodged by argon ions, approximately one-sixth of the sputtered atoms deposit onto the inner walls of the vacuum chamber or on the support, increasing the cost of cleaning the vacuum equipment and downtime. For these reasons, the manufacturing cost of the mask blank itself remains high, and improving the yield is difficult.

[0005] In addition, the structure of a blank mask generally includes a mask substrate (e.g., a glass substrate), a mask material layer (e.g., a light-shielding film such as a chrome film) deposited on the mask substrate, and a photoresist coated on the mask material layer. The current process for further processing a blank mask into a mask with desired patterns and lines generally includes: exposing the photoresist of the blank mask using a laser or electron beam, and developing the mask after exposure to transfer the desired pattern (e.g., a circuit pattern) into the photoresist; then, using the photoresist as a mask, further etching the mask material layer to remove the mask material layer not covered by the photoresist, and cleaning the remaining photoresist after etching. Finally, the remaining mask material layer forms the desired pattern and lines on the mask substrate of the blank mask, thereby producing a mask with the desired pattern and lines for use by downstream chip manufacturers.

[0006] Therefore, how to simplify the mask manufacturing process, improve manufacturing efficiency and manufacturing yield, and reduce mask manufacturing costs has become one of the technical problems that technical personnel in this field urgently need to solve.

[0007] Summary of the Invention

[0008] The object of the present invention is to provide a method and system for manufacturing a mask, which can simplify the manufacturing process of the mask, reduce the manufacturing cost of the mask and improve the manufacturing yield of the blank mask.

[0009] To achieve the above-mentioned objectives, the present invention provides a method for manufacturing a mask plate, which includes the following steps: S1, using a pulsed laser to perform pulsed laser deposition on a mask substrate on a process machine to form a required mask material layer on the mask substrate to obtain a blank mask plate; S2, further using the pulsed laser to perform laser direct writing on the mask material layer on the process machine to form a required pattern in the mask material layer to obtain a mask plate.

[0010] Optionally, the step S1 includes cyclically executing the following sub-steps: S11, using the pulsed laser on the process machine to perform pulsed laser deposition on the mask substrate to obtain a blank mask having a corresponding mask material layer; S12, detecting whether the performance of the blank mask meets the target; S13, when it is detected that the performance of the blank mask does not meet the target, selecting a corresponding laser surface treatment method according to the detection result, and performing laser surface treatment on the blank mask on the process machine to trim the surface of the mask material layer, or removing the mask material layer and trimming the surface of the mask substrate.

[0011] Optionally, before executing step S1, step S0 is also included, providing a mask to be discarded, and performing laser surface treatment on the mask to be discarded on the process machine to remove the film layer on the mask substrate of the mask to be discarded to obtain the mask substrate.

[0012] Optionally, the laser surface processing method includes one of the following three methods: a first method, using a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; a second method, using a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; a third method, first using the first laser to perform laser film removal, and then using the second laser to perform laser polishing; wherein, the first laser or the second laser is the pulsed laser.

[0013] Optionally, the pulsed laser is realized by the first laser or the second laser.

[0014] Optionally, during the laser surface treatment process, the surface morphology of the film layer on the mask substrate is detected online on the process machine, and the process parameters of the laser surface treatment process are adjusted online according to the result of the surface morphology detection.

[0015] Optionally, in step S12, detecting whether the performance of the blank mask basic structure meets the target includes: detecting whether at least one performance index of the thickness and surface flatness of the mask material layer and the transmittance and reflectivity of the blank mask meets the target.

[0016] Optionally, when it is detected in step S12 that the performance of the blank mask does not meet the standards, the process parameters of the pulsed laser deposition are also adjusted so that after the laser surface treatment in step S13 is completed and step S11 needs to be performed again, the corresponding pulsed laser deposition process can be performed on the blank mask after laser surface treatment based on the adjusted parameters in step S11.

[0017] Based on the same inventive concept, the present invention also provides a mask manufacturing system, which includes: a pulsed laser deposition device integrated on the same process machine, used to use the pulsed laser on the process machine to perform pulsed laser deposition on the mask substrate, so as to form a required mask material layer on the mask substrate to obtain a blank mask; a pulsed laser direct writing device, used to further use the pulsed laser on the process machine to perform laser direct writing on the mask material layer, so as to form a required pattern in the mask material layer to obtain a mask; a system master control device, coupling the pulsed laser deposition device and the pulsed laser direct writing device, used to control the pulsed laser deposition device and the pulsed laser direct writing device to work in coordination.

[0018] Optionally, the manufacturing system further includes integrated on the process machine: a detection device for detecting whether the performance of the blank mask reaches the target; a laser surface treatment device for performing laser surface treatment on the blank mask on the process machine to trim the surface of the mask material layer, or to remove the mask material layer and trim the surface of the mask substrate; wherein the system master control device is also coupled to the laser surface treatment device and the detection device, and is configured to control the pulsed laser deposition device, the detection device and the laser surface treatment device to coordinate the operation when the detection device detects that the performance of the blank mask does not meet the standard, so that the mask substrate circulates among the pulsed laser deposition device, the detection device and the laser surface treatment device until the performance of the blank mask reaches the target.

[0019] Optionally, the laser surface treatment device is also used to initially perform laser surface treatment on the discarded mask plate using the pulse laser or another laser on the process machine to remove the film layer on the mask substrate of the discarded mask plate to obtain the mask substrate required in the pulse laser deposition device.

[0020] Optionally, the laser surface processing method includes one of the following three methods: a first method, using a first laser to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; a second method, using a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; a third method, first using the first laser to perform laser film removal, and then using the second laser to perform laser polishing; wherein, the first laser or the second laser is the pulsed laser.

[0021] Optionally, the first laser or the second laser is transmitted to the laser surface treatment device, the pulsed laser deposition device and the pulsed laser direct writing device respectively through a shutter, a quarter-wave plate and a polarizer, a first beam splitter and a second beam splitter arranged in sequence along the optical path.

[0022] Optionally, the laser surface processing device includes a first beam expanding mechanism, a focusing mechanism and a first scanning focusing mechanism; the first beam expanding mechanism is used to enlarge the beam spot of the received first laser or second laser and then output it; the focusing mechanism is used to focus the laser emitted by the first beam expanding mechanism; the first scanning focusing mechanism is used to control the laser emitted by the focusing mechanism to be focused and incident on the surface of the mask substrate in the de-filming chamber or on the surface of the film layer on the mask substrate, thereby realizing laser scanning of the mask substrate.

[0023] Optionally, the manufacturing system further includes a first laser, a second laser and a beam combining mechanism, wherein the first laser is used to provide the first laser, the second laser is used to provide the second laser, and the beam combining mechanism is used to receive the first laser and the second laser in a time-sharing manner, and emit the received lasers along the same angle to the first beam expanding mechanism.

[0024] Optionally, the detection device is used to detect whether at least one performance indicator of the thickness and surface flatness of the mask material layer and the transmittance and reflectivity of the blank mask reaches a target.

[0025] Optionally, the manufacturing system further includes a first transition chamber, a robot conveying device and a second transition chamber, the first transition chamber is arranged between the chamber of the laser surface treatment device and the deposition chamber, the second transition chamber is arranged between the deposition chamber and the chamber of the laser direct writing device, and the robot conveying device is used to realize the transfer of the mask substrate between the chamber of the laser surface treatment device, the first transition chamber, the deposition chamber, the second transition chamber and the chamber of the laser direct writing device.

[0026] Optionally, the pulsed laser deposition device includes a first focusing mechanism, a deposition chamber, and a carrier and a target material arranged in the deposition chamber, wherein the first focusing mechanism is used to converge the corresponding laser light and incident on the target material, and the carrier is used to carry the mask substrate.

[0027] Optionally, the pulse laser direct writing device includes a reflecting mirror, a second beam expanding mechanism, a first dichroic prism, a second dichroic prism, and a second scanning focusing mechanism, which are arranged in sequence along the optical path.

[0028] Optionally, the pulse laser direct writing device further includes an illumination light source, a second focusing mechanism and a detector, wherein the illumination light source is used to provide illumination light to the first dichroic prism, and the second focusing mechanism is used to focus a portion of the laser light at the second dichroic prism into the detector.

[0029] Compared with the prior art, the technical solution of the present invention has at least one of the following beneficial effects:

[0030] 1. The present invention utilizes pulsed laser to perform pulsed laser deposition on the same process machine to manufacture a blank mask and further utilizes pulsed laser generated by the same laser to perform laser direct writing on the blank mask to obtain a mask with a desired pattern. This can realize automated manufacturing of the mask, and has simple process, low manufacturing cost, high production efficiency, stable mask performance, high yield, low process machine equipment cost, and high integration.

[0031] 2. In the process of manufacturing blank masks, through the cyclic execution of steps such as pulsed laser deposition (PLD), detection, and laser surface treatment (laser film removal or laser film removal followed by laser polishing), the performance of the final blank mask can be guaranteed to meet the target through automated means, thereby improving the manufacturing yield of the mask.

[0032] 3. By laser surface treatment of discarded masks, the mask substrates therein are recovered, and blank masks and masks are manufactured based on the recovered mask substrates, thereby reducing the manufacturing cost of the masks.

[0033] 4. When it is detected that the performance of the blank mask does not meet the standards, the parameters of the pulsed laser deposition process are also adjusted to perform the corresponding pulsed laser deposition process again on the blank mask after laser surface treatment based on the adjusted parameters. The pulsed laser deposition process has a high target material utilization rate and can improve the manufacturing efficiency of the blank mask, thereby improving the overall manufacturing efficiency of the mask.

[0034] 5. From the recycling and regeneration of discarded mask plates to the manufacture of new blank mask plates, and then to the generation of mask plate patterns, the entire process is achieved through laser technology, without the intervention of wet processes. Therefore, it can solve the problems of high cost, long process time and environmental pollution caused by wet processes in existing mask substrate regeneration methods and blank mask manufacturing methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.

[0036] FIG. 1 is a flow chart of a method for manufacturing a mask according to a first embodiment of the present invention.

[0037] FIG. 2 is a schematic cross-sectional view of a method for manufacturing a mask according to a first embodiment of the present invention.

[0038] FIG3 is a schematic cross-sectional view of another mask manufactured in the mask manufacturing method according to the second embodiment of the present invention.

[0039] FIG. 4 is a schematic diagram of the architecture of a mask manufacturing system according to a first embodiment of the present invention.

[0040] FIG5 is a schematic diagram of the specific structure of the mask manufacturing system according to the first embodiment of the present invention.

[0041] FIG. 6 is a flow chart of a method for manufacturing a mask according to a second embodiment of the present invention.

[0042] FIG. 7 is a schematic diagram of the architecture of a mask manufacturing system according to a second embodiment of the present invention.

[0043] 8 to 10 are schematic diagrams showing the specific structure of a mask manufacturing system according to a second embodiment of the present invention.

[0044] FIG. 11 is a flow chart of a method for manufacturing a mask according to a third embodiment of the present invention.

[0045] FIG. 12 is a simplified flow chart of a method for manufacturing a mask according to a third embodiment of the present invention, in which steps S0 and S13 employ substantially the same process. DETAILED DESCRIPTION

[0046] In the following description, a large number of specific details are given to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, some technical features known in the art are not described to avoid confusion with the present invention. It should be understood that the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present invention to those skilled in the art. The same reference numerals throughout represent the same elements. It should be understood that when an element is referred to as being "connected to" or "coupled to" another element, it can be directly connected to the other element, or there can be intervening elements. Conversely, when an element is referred to as being "directly connected to" another element, there are no intervening elements. When used herein, the singular forms "a," "an," and "said / the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "comprising" is used to identify the presence of certain features, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups. As used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0047] The technical solutions proposed by the present invention are further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in a very simplified form and are not to exact scale, and are only used to facilitate and clearly illustrate the embodiments of the present invention.

[0048] First embodiment

[0049] Referring to FIG. 1 , an embodiment of the present invention provides a method for manufacturing a mask, which includes the following steps:

[0050] S1, performing pulsed laser deposition on a mask substrate using a pulsed laser on a process machine to form a desired mask material layer on the mask substrate to obtain a blank mask;

[0051] S2, further using the pulse laser to perform laser direct writing on the mask material layer on the process machine to form a desired pattern in the mask material layer to obtain a mask.

[0052] Referring to Figure 2 (A), in step S1, a corresponding mask substrate 101 is first provided to a process tool. The mask substrate 101 can be any suitable substrate with a clean, flat surface, such as a quartz substrate, a soda lime substrate, or a borosilicate substrate. Next, referring to Figures 2 (B) and (C) and Figure 5, a laser is used on the process tool to generate pulsed laser light, and pulsed laser deposition (PLD) of the corresponding material is performed on the mask substrate 101, forming a mask material layer 106 of the desired thickness and material. This results in the desired mask blank.

[0053] In particular, please refer to (B) and (C) in Figure 2 and Figure 5. The specific principle of pulsed laser deposition is as follows: the pulsed laser is transmitted and focused by the first focusing mechanism 17 such as a convex lens and then hits the target material 15 in the deposition chamber 19. Then, under the action of the pulsed laser, plasma is generated on the surface of the target material 15. The plasma expands and emits in a directionally localized manner and is deposited on the sample 10 (i.e., the mask substrate 101 in Figure 2 or the blank mask composed of the mask substrate 101 and the mask material layer 106 above it) to form a thin film (i.e., the newly deposited mask material layer 106). In this step, according to the setting of the target material 15 and the process parameters, the deposited mask material layer 106 can be a single-layer film structure such as metal, or a structure composed of multiple layers of different material films stacked together. The pulsed laser can be selected according to the light absorption characteristics of the mask material layer to be deposited, such as any suitable laser such as ruby ​​laser, CO2 laser, ultraviolet laser, Nd glass laser or excimer laser. In addition, the pulse width of the pulse laser can be any appropriate level such as femtosecond level, picosecond level, nanosecond level, microsecond level, etc. Accordingly, the pulse laser can be called femtosecond laser, picosecond laser, nanosecond laser, microsecond laser, etc.

[0054] Since the pulsed laser deposition process is used to deposit the mask material layer 106 in this step, it has the following advantages: a. It is easy to obtain a multi-component thin film with a desired stoichiometric ratio, that is, it has good composition retention; b. The deposition rate is high, the process cycle is short, the temperature requirement for the mask substrate 101 is low, and the prepared thin film is uniform; c. The process parameters can be adjusted arbitrarily, and there is no restriction on the type of target material; d. It is easy to clean and can prepare a variety of thin film materials; e. The reaction is rapid and the growth is fast. Under normal circumstances, a thin film of about 1μm can be obtained in one hour, which can improve the utilization rate of the target material.

[0055] As an example, please further refer to (B) in Figure 2. The mask material layer 106 deposited by the pulsed laser deposition process in this step includes a back anti-reflection film 103, a light-shielding film 104 and an anti-reflection film 105 stacked on the mask substrate 101 from bottom to top, wherein the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 are all formed based on the same target material. The difference is that the reaction gases introduced during the deposition of the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 are different. For example, the back anti-reflection film 103, the light-shielding film 104 and the anti-reflection film 105 are all formed based on a Cr target material. N2 is introduced during the deposition of the light-shielding film 104 to form CrN as the light-shielding film 104. At least one of N2, O2, CO or CO2 is introduced during the deposition of the back anti-reflection film 103 and the anti-reflection film 105, thereby forming at least one of CrO, CrON and CrCON as the back anti-reflection film 103 and the anti-reflection film 105.

[0056] As another example, referring to FIG3 , the mask material layer 106 formed by pulsed laser deposition in step S2 includes a phase shift film 102, a back anti-reflection film 103, a light shielding film 104, and an anti-reflection film 105, stacked sequentially from bottom to top on the mask substrate 101. The material of the phase shift film 102 may include at least one of a Cr (chromium) compound (e.g., chromium oxide, chromium nitride, or chromium oxynitride), MoSi, or a MoSi compound (e.g., MoSiON, MoSiCON, MoSiN, MoSiCN, or MoSiCO). Referring to FIG2 (C), in step S2, the mask material layer 106 is laser-written using the same pulsed laser generated by the same laser used in step S1 on the same process tool.

[0057] The specific principle of laser direct writing in this step is as follows: the corresponding pulsed laser is transmitted and focused through optical elements such as reflectors and convex lenses, and then hits the sample 10 in the laser direct writing chamber 29. By controlling the pulsed laser to travel and stay along a specific path on the mask material layer 106, the pulsed laser can be directly ablated at a specific location on the mask material layer 106, thereby forming the desired pattern 107 in the mask material layer 106, thereby obtaining a mask. In this step, the desired pattern 107 is formed in the mask material layer 106 by laser direct writing, which can omit the processes of coating, exposing, developing, etching, and stripping required from a blank mask to a mask in the prior art, thereby simplifying the process, improving efficiency, and reducing costs. It should be understood that the parameters such as the pulse width, wavelength, and power of the pulsed laser selected in this embodiment can be fixed to meet the requirements of both the pulsed laser deposition and laser direct writing processes, or they can be adjustable to adapt to the pulsed laser deposition and laser direct writing processes.

[0058] For example, when the mask material layer 106 is formed by stacking multiple layers of film layers of different materials, the parameters of the pulsed laser during the pulsed laser deposition process can be set according to the distance between the film layer and the surface of the mask substrate 101 and the material properties of the film layer, and at least one parameter of the pulsed laser during the deposition of different film layers is different. Further, the parameters of the pulsed laser during the laser direct writing process can be set according to the distance between the film layer and the surface of the mask substrate 101 and the material properties of the film layer, and at least one parameter of the pulsed laser during the laser direct writing of different film layers is different. As an example, as the depth of the laser direct writing increases, the power of the pulsed laser becomes lower and lower, and the scanning step size becomes smaller and smaller, thereby quickly deepening the ablation depth in the early stage of the laser direct writing to improve the laser direct writing efficiency, and slowly deepening the ablation depth in the later stage of the laser direct writing to protect the mask substrate 101 from damage.

[0059] Among them, during the laser direct writing process, the pulse laser needs to meet the following requirements: (1) The pulse width can be small enough. When the pulse laser ablates the mask material layer 106, the influence of the fluid dynamic process can be ignored. The processing energy of the pulse laser is more concentrated, so that the energy required to reach the ablation threshold of the mask material layer 106 is lower, thereby greatly reducing the energy loss of laser direct writing; (2) The time for the pulse laser to act on the mask material layer 106 is extremely short. The heat conduction effect and heat diffusion effect in the laser direct writing process are not obvious, which improves and eliminates the unnecessary damage and destruction of the surrounding materials caused by the heat conduction effect and heat diffusion effect, thereby ensuring the processing accuracy of laser direct writing; (3) The laser pulse The pulse action time is extremely short, the peak intensity of the pulse laser is extremely high, and the multi-layer stacked film layers in the mask material layer 106 absorb the energy of the pulse laser nonlinearly. When the mask material layer 106 is directly written by laser, the diffraction limit can be broken through and the ablation threshold of the bottom layer or sub-bottom layer in the mask material layer 106 can be reached, thereby penetrating into the bottom layer or sub-bottom layer in the mask material layer 106 for ablation to achieve fine processing; (4) During the laser direct writing process, the pulse laser removes each film layer in the mask material layer 106 mainly by direct vaporization, and the effects of the material melting, flowing and re-solidification caused by the pulse laser are as little as possible, thereby ensuring the pattern accuracy of the laser direct writing.

[0060] Optionally, the pulsed laser is a femtosecond laser, which has a pulse width of only a few quadrillionths of a second and high energy. It should be understood that the mask manufacturing method of this embodiment can be implemented using any suitable process machine system in the art, but is preferably implemented using the mask manufacturing system of the present invention.

[0061] Please refer to Figure 4. The mask manufacturing system provided in this embodiment includes a pulsed laser deposition device 200, a pulsed laser direct writing device 204 and a system master control device 202 integrated on the same process machine. In particular, please refer to Figure 2, the pulsed laser deposition device 200 is used to use the pulsed laser on the process machine to perform pulsed laser deposition on the mask substrate 101, so as to form the required mask material layer 106 on the mask substrate 101, and obtain a blank mask. The pulsed laser direct writing device 204 is used to further use the pulsed laser on the process machine to perform laser direct writing on the mask material layer 106, so as to form the required pattern 107 in the mask material layer 106, and obtain a mask. The system master control device 202 couples the pulsed laser deposition device 200 and the pulsed laser direct writing device 204, and is used to control the pulsed laser deposition device 200 and the pulsed laser direct writing device 204 to work in coordination.

[0062] It is worth noting that any one of the system control device 202, the pulsed laser deposition device 200, and the pulsed laser direct writing device 204 can be split into multiple modules, or at least part of the functions of one or more of these devices can be combined with at least part of the functions of other devices and implemented in one module. In addition, at least one of the system control device 202, the pulsed laser deposition device 200, and the pulsed laser direct writing device 204 can be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA), a system on a chip, a system on a substrate, a system on a package, an application specific integrated circuit (ASIC), or can be implemented in hardware or firmware in any other reasonable way of integrating or packaging the circuit, or in an appropriate combination of software, hardware, and firmware. Alternatively, at least one of the system control device 202, the pulsed laser deposition device 200, and the pulsed laser direct writing device 204 can be at least partially implemented as a computer program module, and when the program is executed by a computer, the functions of the corresponding module can be executed.

[0063] As an example, referring to FIG5 , a pulsed laser deposition apparatus 200 includes a first focusing mechanism 17, a deposition chamber 19 having a light-transmitting window 18, and a stage 14 and a target 15 disposed in the deposition chamber 19. A pulsed laser direct writing apparatus 204 includes a laser direct writing chamber 29, and a reflector 20, a second beam expansion mechanism 21, a first dichroic prism 23, a second dichroic prism 24, and a second scanning focusing mechanism 25, which are sequentially arranged along the optical path in the laser direct writing chamber 29.

[0064] In addition to the system master control device 202, the pulsed laser deposition device 200, and the pulsed laser direct writing device 204, the manufacturing system of this example also includes a laser 1, a shutter 2, a quarter-wave plate 3, a polarizer 4, and a second beam splitter 16, which are integrated on the process tool and arranged in sequence along the optical path. Furthermore, the system includes a second transition chamber 50 and a robotic transfer device 50a, which are integrated on the process tool.

[0065] Further optionally, the pulsed laser direct writing device 204 also includes an illumination light source 22, a second focusing mechanism 26 and a detector 27 arranged in the laser direct writing chamber 29. It should be understood that in some examples, the pulsed laser deposition device 200 and the pulsed laser direct writing device 204 can work successively, so that the same sample 10 can be subjected to pulsed laser deposition first and then to laser direct writing. In this case, the pulsed laser deposition device 200 and the pulsed laser direct writing device 204 can be provided with corresponding shutters and other electrical control components to control the opening and closing of the pulsed lasers in their respective chambers. In other examples, the pulsed laser deposition device 200 and the pulsed laser direct writing device 204 can also work simultaneously, so that the pulsed laser deposition device 200 performs pulsed laser deposition on one sample 10, and the pulsed laser direct writing device 204 performs laser direct writing on another sample 10 (the sample on which pulsed laser deposition has been completed).

[0066] The laser 1 is used to generate pulsed laser light. The laser 1 can be any suitable laser, such as a ruby ​​laser, a CO2 laser, an ultraviolet laser, an Nd glass laser, or an excimer laser. The pulse width (referred to as pulse width) of the pulsed laser light generated by the laser 1 can be any suitable level, such as femtoseconds, picoseconds, microseconds, or nanoseconds. The laser 1 can be an electronically controlled component coupled to the system master control device 202, so that the wavelength, pulse width, and power of the generated pulsed laser light can be controlled and adjusted by the laser 1 according to control instructions or adjustment instructions from the system master control device 202.

[0067] The pulsed laser light generated by the laser 1 passes through the shutter 2, the quarter-wave plate 3, the polarizer 4, and the second beam splitter 16 in sequence. The shutter 2 can be turned on and off by the system master control device 202 by controlling the high and low level signals, thereby controlling the on and off of the pulsed laser light. The second beam splitter 16 divides the received laser light into two paths. One path passes through the first focusing mechanism 17 and the light-transmitting window 18 and is irradiated onto the target material 15 in the deposition chamber 19. The other path passes through the reflector 20, the second beam expansion mechanism 21, the first dichroic prism 23, the second dichroic prism 24, and the second scanning focusing mechanism 25 and is irradiated onto the sample 10 carried by the carrier 28 in the laser direct writing chamber 29 of the pulsed laser direct writing device 204.

[0068] The illumination light generated by the illumination light source 22 is irradiated onto the sample 10 carried by the carrier 28 through the first dichroic prism 23, the second dichroic prism 24, and the second scanning and focusing mechanism 25. The illumination light reflected from the surface of the sample 10 carried by the carrier 28 is converged into the detector 27 through the second scanning and focusing mechanism 25, the second dichroic prism 24, and the second focusing mechanism 26. The detector 27 can thereby obtain the image effect of the laser direct writing in real time and feed back the corresponding data to the system master control device 202, so that the system master control device 202 can adjust and optimize the process parameters and scanning path of the pulse laser direct writing device 204 to ensure the final effect of the laser direct writing. The second beam expansion mechanism 21 is mainly used to expand the beam diameter of the pulse laser reflected by the reflector 20 and reduce the emission angle of the pulse laser beam. Compared with the case where the second beam expanding mechanism 21 is omitted, when the second beam expanding mechanism 21 is present, the pulsed laser beam reflected by the reflector 20 can make the energy of the light spot focused onto the sample 10 by the second scanning focusing mechanism 25 more evenly distributed within the light spot range.

[0069] In this embodiment, the product of the beam diameter and the divergence angle of the pulsed laser output by the laser 1 is an optical invariant and is approximately a certain value. When the second beam expanding mechanism 21 expands the beam diameter of the pulsed laser reflected by the reflector 20 by x times, its divergence angle is correspondingly compressed to 1 / x of the original. In summary, arranging the second beam expanding mechanism 21 on the optical path can reduce the requirements for other optical elements on the optical path, and make the energy of the light spot focused on the sample 10 more evenly distributed within the light spot range, thereby improving the purpose of pulsed laser energy utilization. Optionally, the second beam expanding mechanism 21 can be an electronically controlled component, which can adjust and control its beam expansion ratio according to the control instructions or adjustment instructions of the system master control device 202. Optionally, the second beam expanding mechanism 21 can be a laser beam expanding collimator.

[0070] The second scanning and focusing mechanism 25 is used to control laser parameters such as the focal length and focal plane of the pulsed laser and to implement scanning parameters such as the scanning path. The second scanning and focusing mechanism 25 can include a field lens, which is also called a flat-field focusing lens or an F-theta lens. Unlike ordinary spherical lenses that can only focus on curved surfaces, this field lens is specially designed so that after the incident laser beam is focused and emitted, it can be focused on the surface of the sample 10 in the laser direct writing chamber 29. The incident angle of the incident laser is linearly related to the position of the emitted laser, and the focusing position of the pulsed laser on the surface of the sample 10 in the laser direct writing chamber 29 can be precisely controlled. The second scanning and focusing mechanism 25 can also include a galvanometer, which is composed of two reflective mirrors respectively connected to a swing motor. A specific path is set on the computer side and the motion signal is sent to the system main control device 202. The system main control device 202 controls the rotation of the reflector by controlling the motor, so that the pulse laser swings along a specific path on the surface of the sample 10 in the laser direct writing chamber 29, and cooperates with the movement of the supporting platform 28 for supporting the sample 10 in the laser direct writing chamber 29, thereby scanning the surface of the sample 10 in the laser direct writing chamber 29 to achieve ultra-fast serial laser direct writing.

[0071] Optionally, the second scanning focusing mechanism 25 may include an electronic control component, which can adjust the focusing parameters such as the focal length and focal plane of the pulsed laser incident on the surface of the sample 10 in the laser direct writing chamber 29, as well as the scanning parameters such as the scanning step length, scanning speed, and scanning path according to the control instructions or adjustment instructions of the system main control device 202. The first focusing mechanism 17 is used to converge the pulsed laser emitted by the second beam splitter 16 and incident on the target material 15, and the stage 14 is used to carry the sample 10 for manufacturing a blank mask. The second transition chamber 50 is arranged between the deposition chamber 19 and the laser direct writing chamber 29 to realize the queuing of the sample 10 in front of the deposition chamber 19 and the laser direct writing chamber 29. The robot conveying device 50a is used to realize the transfer of samples between the deposition chamber 19, the second transition chamber 50 and the laser direct writing chamber 29.

[0072] Furthermore, it should be understood that the specific structure shown in FIG5 is merely an example and does not imply that the manufacturing system of this embodiment is solely comprised of the structure shown. The system may further include any appropriate optical or electronic components as needed. For example, referring to FIG5 , a reflector is disposed between the second beam splitter 16 and the first focusing mechanism 17 to direct the pulsed laser light emitted by the second beam splitter 16 to the first focusing mechanism 17 at an optimal angle.

[0073] In summary, the mask manufacturing method and manufacturing system of the present embodiment can automatically manufacture a blank mask and perform laser direct writing on the blank mask using pulsed laser generated by the same laser on the same process machine to form a mask with a desired pattern. The process is simple, the manufacturing cost is low, the production efficiency is high, the performance of the mask is stable, the yield is high, the process machine equipment cost is low, and the integration is high.

[0074] Second embodiment

[0075] Referring to FIG. 6 , this embodiment provides a method for manufacturing a mask, which also includes the following steps:

[0076] S1, performing pulsed laser deposition on a mask substrate using a pulsed laser on a process machine to form a desired mask material layer on the mask substrate to obtain a blank mask;

[0077] S2, further using the pulse laser to perform laser direct writing on the mask material layer on the process machine to form a desired pattern in the mask material layer to obtain a mask.

[0078] The difference between the manufacturing method of this embodiment and the first embodiment is that step S1 includes cyclically executing the following sub-steps:

[0079] S11, using the pulsed laser to perform pulsed laser deposition on a mask substrate on a process machine to obtain a blank mask having a corresponding mask material layer;

[0080] S12, detecting whether the performance of the blank mask meets the target;

[0081] S13, when it is detected that the performance of the blank mask does not meet the standard, a corresponding laser surface treatment method is selected according to the detection result, and the blank mask is subjected to laser surface treatment on the process machine to trim the surface of the mask material layer, or the mask material layer is removed and the surface of the mask substrate is trimmed.

[0082] After the mask material layer 106 is deposited in sub-step S11, sub-step S12 is executed. In sub-step S12, the deposited mask material layer 106 or the performance of the blank mask formed by the mask material layer 106 and the mask substrate 101 can be detected by any desired detection means to determine whether the target is met. For example, the surface morphology of the blank mask can be detected online and in real time by a device such as a scanning probe microscope (SPM). The detection results of the surface morphology can include information such as the current surface roughness or surface flatness, as well as information such as the height of each position and the thickness of the film layer. The optical performance indicators such as the transmittance and reflectivity of the blank mask can also be detected by a corresponding optical detection device. The detection results are further compared with the corresponding target value or target range to determine whether the current performance of the blank mask has met the target.

[0083] If it is determined that the current performance of the reticle blank does not meet the target, the reticle blank is sent to sub-step S13 for laser surface treatment to trim the surface of the mask material layer, or to remove the mask material layer and trim the surface of the mask substrate. In this step, an appropriate laser surface treatment method can be selected based on the detection results of sub-step S12 to perform laser surface treatment on the reticle blank. The optional laser surface treatment methods include one of the following three methods:

[0084] The first method is to use a first laser for laser stripping to remove the film layer of corresponding thickness on the mask substrate; the second method is to use a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; the third method is to first use the first laser for laser stripping and then use the second laser for laser polishing.

[0085] The first laser or the second laser is a pulsed laser generated by a laser used in pulsed laser deposition, that is, the laser stripping or laser polishing process and the pulsed laser deposition process use the same laser to generate the pulsed laser.

[0086] In actual application, if sub-step S12 detects that the current performance of the blank mask is primarily characterized by excessive surface roughness, while other performance characteristics are relatively close to the target, then sub-step S13 may include laser polishing the surface of the blank mask using a second laser to achieve the target surface roughness of the mask material layer 106. If sub-step S12 detects that all aspects of the current performance of the blank mask are significantly different from the target, then sub-step S13 may include laser stripping the surface of the blank mask using the first laser to remove all mask material layers 106 on the mask substrate 101, and then laser polishing the surface of the mask substrate using the second laser to achieve a clean, flat, and desired surface, thereby laying the foundation for executing sub-step S11 again. If it is found in sub-step S12, based on the analysis of the previous detection results and the current results, that the mask material layer deposited in this sub-step S11 causes the current performance of the blank mask to fail to meet the target, then in sub-step S13, a first laser can be selected to perform laser stripping on the surface of the blank mask to remove the mask material layer 106 deposited on the mask substrate 101 in this sub-step S11, laying the foundation for executing sub-step S11 again.

[0087] Furthermore, in order to improve the efficiency and effect of the laser surface treatment in sub-step S13, the surface morphology of the blank mask can be detected online in real time during the laser surface treatment process, and the process parameters of the laser surface treatment in sub-step S13 can be adjusted online in real time according to the detection results of the surface morphology, such as adjusting the wavelength, power, focusing parameters (including the focal plane size, the angle between the focal plane and the mask substrate surface, etc.) of the first laser or the second laser and other laser parameters and scanning parameters (such as scanning path, scanning step size, scanning speed, etc.).

[0088] The following describes the specific process of sub-step S13 in detail, taking the example of performing laser stripping followed by laser polishing in sub-step S13. First, referring to Figure 6 and Figure 2 , a pulsed laser with a pulse width of any suitable level, such as femtoseconds, picoseconds, microseconds, or nanoseconds, can be used as the first laser. This first laser is focused and irradiated onto the mask material layer 106 in a scanning manner. Due to the material properties of the mask material layer 106 and the difference in material properties between the mask material layer 106 and the mask substrate 101, when the first laser is focused on the surface of the mask material layer 106, a large amount of heat accumulates in the near-surface region within a very short period of time, causing the surface temperature of the mask material layer 106 to rise rapidly. When the temperature reaches the melting point of the material near the surface of the mask material layer 106 (i.e., the surface material), the material near the surface begins to melt. When the temperature further reaches the boiling point of the material near the surface, the material near the surface begins to evaporate. The temperature of the mask substrate 101 remains substantially at room temperature, so that the mask material layer 106 can be quickly removed from the mask substrate 101, thereby obtaining the mask substrate 101, and the surface of the mask substrate 101 is minimally damaged during the laser stripping process. The removal speed of the mask material layer 106 depends on parameters such as the properties and thickness of the mask material layer and the laser power used.

[0089] Optionally, during the process of removing the mask material layer 106 using the first laser, the surface topography of the blank mask (i.e., the remaining mask material layer and the exposed mask substrate thereof) can be detected online and in real time using a device such as a scanning probe microscope (SPM). The surface topography detection results can include information such as the current surface roughness or surface flatness, as well as information such as the position, height, and thickness of the remaining mask material layer. Based on the surface topography detection results, the laser stripping process parameters can be adjusted, including adjusting laser parameters such as the wavelength, power, and focusing parameters (including the focal plane size and the angle between the focal plane and the mask substrate surface) of the first laser irradiated on the surface of the mask material layer 106, as well as adjusting scanning parameters (including the scanning path, scanning speed, scanning step size, etc.) of the laser scanning of the blank mask surface using the first laser. The remaining mask material layer 106 can then be removed based on the online adjusted laser stripping process parameters. Therefore, the process parameters of the laser stripping are adjusted while the film is being removed until the removal effect of the mask material layer 106 on the mask substrate 101 reaches the target. This ensures the film removal effect on the mask substrate 101 and avoids unnecessary damage to the mask substrate 101. At the same time, the efficiency of the laser stripping is improved, and the laser polishing work in the subsequent steps can be reduced, thereby improving the efficiency of the subsequent laser polishing.

[0090] It should be understood that in this embodiment, when the mask material layer 106 is composed of multiple layers of films with different properties, the parameters of the first laser can be set based on the distance between the films and the surface of the mask substrate 101 and the material properties of the films. At least one parameter of the first laser can be different for different film removals. For example, as the film removal depth increases, the power of the first laser decreases and the scanning step size decreases. This allows for large-scale film removal in the early stages of film removal and fine-grained film removal in the later stages, thereby improving film removal efficiency and protecting the mask substrate 101 from damage.

[0091] After the laser stripping is completed in sub-step S13, a second laser may be generated by any suitable laser, such as a carbon dioxide laser, and the second laser is irradiated onto the mask substrate 101 in a scanning and focused manner, thereby laser polishing the surface of the mask substrate 101. When the second laser is focused onto a corresponding position on the mask substrate 101, the chemical bonds in the surface material of the mask substrate 101 at that position may be broken, or the lattice structure of the surface material of the mask substrate 101 at that position may be destroyed, thereby removing the surface material of the mask substrate 101 at that position. That is to say, the laser polishing is actually a cold polishing of the surface of the mask substrate 101. Compared with the hot polishing achieved by utilizing the thermal effect of the laser (that is, utilizing the thermal effect of the laser to melt, flow or evaporate the surface material on the substrate to achieve the flatness of the substrate surface, the temperature gradient is large during the hot polishing process, resulting in large thermal stress on the substrate surface, which is prone to cracks and other problems), the thermal stress it brings to the surface of the mask substrate 101 is very small and can be ignored. Therefore, it will not cause cracks, scratches, micro-defects, residual "ghost images" and other defects on the surface of the mask substrate, nor will it affect the surrounding materials. It is also easy to control the amount of material removed (for example, the thickness removed), so that it is possible to finally obtain a mask substrate 101 with a surface roughness that can meet the requirements for the subsequent direct manufacture of a new blank mask.

[0092] Optionally, when the mask substrate 101 is laser polished using the second laser, the surface topography of the mask substrate 101 can be detected online and in real time using a device such as a scanning probe microscope (SPM). The surface topography detection results may include information such as the current surface roughness or surface flatness, and may also include information such as the height of each position of the mask substrate 101. Based on the surface topography detection results, the laser polishing process parameters are adjusted, such as the wavelength, power, and focusing parameters (including the focal plane size, the angle between the focal plane and the mask substrate surface) of the second laser irradiated on the surface of the mask substrate 101, as well as the scanning parameters (including the scanning speed, the scanning step length, etc.) of the second laser. Thus, the surface of the mask substrate 101 is further polished based on the online adjusted laser polishing process parameters to eliminate protrusions and depressions on the surface of the mask substrate 101. Thus, the laser polishing process parameters are adjusted while polishing until the surface roughness of the mask substrate 101 meets the requirements, thereby ensuring the polishing effect of the mask substrate 101, avoiding unnecessary damage to the mask substrate 101, and improving the laser polishing efficiency.

[0093] After sub-step S13, the process may return to sub-step S11 to deposit a new mask material layer on the mask substrate again, thereby looping sub-steps S11 to S13 until the blank mask plate obtained meets the target. Optionally, when it is detected that the performance of the blank mask plate does not meet the target, the parameters of the pulsed laser deposition process are adjusted according to the detection result, so that after the laser surface treatment in step S13 is completed and it is necessary to perform step S11 again (i.e., return to step S11), the corresponding pulsed laser deposition process can be performed on the blank mask plate after the laser surface treatment based on the adjusted parameters in step S11, thereby improving the effect of performing the pulsed laser deposition process again, reducing the number of cycles of steps S11 to S13 as much as possible, and thereby improving the efficiency of manufacturing blank mask plates that meet the target.

[0094] Furthermore, after the performance of the blank mask reaches the target, step S2 can be further performed, i.e., laser direct writing can be performed on the mask material layer 106 of the blank mask. The first laser and the second laser used in the laser surface treatment can both come from a laser that generates the pulsed laser required for the pulsed laser deposition process. In other embodiments, one of the first laser and the second laser used in the laser surface treatment and the pulsed laser used in the pulsed laser deposition process can come from the same laser, while the other can come from a different laser than the pulsed laser used in the pulsed laser deposition process. The other can be a pulsed laser with a pulse width in any suitable level, such as microseconds, nanoseconds, femtoseconds, or picoseconds. The other can also be a continuous wave (CW) laser or a quasi-continuous wave (QCW) laser.

[0095] It should be understood that the method for manufacturing the mask of this embodiment can be implemented using any appropriate equipment and machine system in the art, but is preferably implemented using the blank mask manufacturing system of this embodiment.

[0096] 7 , the mask manufacturing system provided in this embodiment includes a pulsed laser deposition device 200 , a laser surface treatment device 201 , a detection device 203 , a system master control device 202 , and a pulsed laser direct writing device 204 integrated on the same process machine.

[0097] The difference between the mask manufacturing system of this embodiment and the mask manufacturing system of the first embodiment lies in that a laser surface processing device 201 and a detection device 203 are additionally provided.

[0098] The detection device 203 is used to detect whether the performance of the blank mask provided by the pulsed laser deposition device 200 meets the target. For example, the detection device 203 can detect whether at least one performance indicator of the thickness and surface flatness of the mask material layer 106 or the mask substrate 101, and the transmittance and reflectivity of the blank mask meets the target.

[0099] The laser surface treatment device 201 is used to select a corresponding laser surface treatment method based on the detection result when the detection device 203 detects that the performance of the blank mask does not meet the standard, and perform laser surface treatment on the surface of the film layer on the mask substrate 101 to trim the surface of the mask material layer 106 of the blank mask, or remove the mask material layer 106 on the mask substrate 101 and trim the surface of the mask substrate 101. When the mask substrate 101 is not covered by the mask material layer 106, the laser surface treatment is performed on the surface of the mask substrate 101; when the mask substrate 101 is covered by the mask material layer 106, the laser surface treatment is performed on a portion of the thickness or the entire thickness of the mask material layer 106 on the mask substrate 101. Optionally, the laser surface treatment method that can be provided by the laser surface treatment device 201 includes one of the following three methods:

[0100] In the first method, a first laser is used to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate;

[0101] The second method is to use a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate;

[0102] The third method is to first use the first laser to perform laser film removal, and then use the second laser to perform laser polishing.

[0103] The system master control device 202 is used to control the coordinated operation of the laser surface treatment device 201, the pulsed laser deposition device 200, the pulsed laser direct writing device 204 and the detection device 203, and when the detection device 203 detects that the performance of the blank mask output by the pulsed laser deposition device 200 does not meet the standard, it further controls the mask substrate 101 (i.e., the sample 10) to be cyclically transmitted and processed in the pulsed laser deposition device 200, the detection device 203 and the laser surface treatment device 201 until the performance of the blank mask reaches the target.

[0104] Optionally, the system master control device 202 is also used to adjust the process parameters of the pulsed laser deposition device 200 when the detection device 203 detects that the performance of the blank mask does not meet the standards, so that the pulsed laser deposition device 200 performs the subsequent pulsed laser deposition process based on the adjusted process parameters.

[0105] It is worth noting that the pulse laser required by the laser surface treatment device 201 to implement the laser film removal process or the laser polishing process and the pulse laser used by the pulse laser deposition device 200 to implement the pulse laser deposition process come from the same laser.

[0106] In addition, any one of the system master control device 202, the laser surface treatment device 201, the pulsed laser deposition device 200, the detection device 203, and the pulsed laser direct writing device 204 can be split into multiple modules, or at least part of the functions of one or more of these devices can be combined with at least part of the functions of other devices and implemented in one module. In addition, at least one of the system master control device 202, the laser surface treatment device 201, the pulsed laser deposition device 200, the detection device 203, and the pulsed laser direct writing device 204 can be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA), a system on a chip, a system on a substrate, a system on a package, an application specific integrated circuit (ASIC), or can be implemented in hardware or firmware in any other reasonable way of integrating or packaging circuits, or in an appropriate combination of software, hardware, and firmware. Alternatively, at least one of the system overall control device 202, the laser surface treatment device 201, the pulsed laser deposition device 200, the detection device 203 and the pulsed laser direct writing device 204 can be at least partially implemented as a computer program module, and when the program is run by a computer, the function of the corresponding module can be executed.

[0107] As an example, please refer to Figure 8. The structures of the pulsed laser deposition device 200 and the pulsed laser direct writing device 204 of this embodiment are the same as those of the first embodiment. Specifically, the pulsed laser deposition device 200 includes a first focusing mechanism 17, a deposition chamber 19 having a light-transmitting window 18, and a carrier 14 and a target material 15 disposed in the deposition chamber 19. The pulsed laser direct writing device 204 includes a laser direct writing chamber 29 and a reflector 20, a second beam expansion mechanism 21, a first dichroic prism 23, a second dichroic prism 24, and a second scanning focusing mechanism 25, which are arranged in sequence along the optical path in the laser direct writing chamber 29. The pulsed laser direct writing device 204 also includes an illumination light source 22, a second focusing mechanism 26, and a detector 27 disposed in the laser direct writing chamber 29.

[0108] The laser surface treatment device 201 of this embodiment includes a first beam expansion mechanism 6, a focusing mechanism 7a, a first scanning focusing mechanism 7b, and a laser surface treatment chamber 11 having a light-transmitting window 9. In addition to the system master control device 202, the pulsed laser deposition device 200, the detection device 203, the laser surface treatment device 201, and the pulsed laser direct writing device 204, the manufacturing system of this example also includes a laser 1, a shutter 2, a quarter-wave plate 3, a polarizer 4, a first beam splitter 5, and a second beam splitter 16, which are integrated on the process machine and arranged in sequence along the optical path. In addition, it also includes a first transition chamber 12, a second transition chamber 50, and robot conveying devices 12a and 50a, which are integrated on the process machine.

[0109] Among them, the first beam splitter 5 divides the pulsed laser emitted by the polarizer 4 (i.e., from the laser 1) into two paths, one path is irradiated onto the sample 10 in the laser surface treatment chamber 11 through the first beam expansion mechanism 6, the focusing mechanism 7a, the first scanning focusing mechanism 7b, and the light-transmitting window 9, and the other path is divided into two paths again through the second beam splitter 16, one path is irradiated onto the target material 15 in the deposition chamber 19 through the first focusing mechanism 17 and the light-transmitting window 18, and the other path is irradiated onto the sample 10 carried by the carrier 28 in the laser direct writing chamber 29 of the pulsed laser direct writing device 204 through the reflector 20, the second beam expansion mechanism 21, the first dichroic prism 23, the second dichroic prism 24, and the second scanning focusing mechanism 25.

[0110] The first beam expander 6 is primarily used to expand the beam diameter of the pulsed laser light emitted by the first beam splitter 5 and reduce the emission angle of the pulsed laser light. Compared to when the first beam expander 6 is omitted, the energy of the spot of the pulsed laser light emitted by the first beam splitter 5 after expansion by the first beam expander 6 and irradiation on the sample 10 is more evenly distributed within the spot.

[0111] In this embodiment, the product of the beam diameter and the divergence angle of the pulsed laser light output by laser 1 is an optical invariant and is approximately constant. When the first beam expander 6 expands the beam diameter of the pulsed laser light emitted by the first beam splitter 5 by a factor of x, the divergence angle of the pulsed laser light emitted by the first beam expander 6 is correspondingly compressed to 1 / x of the original value. In summary, the provision of the first beam expander 6 in this optical path can reduce the requirements for other optical components in this optical path and make the energy distribution of the light spot focused on the sample 10 more uniform, thereby improving the efficiency of pulsed laser energy utilization.

[0112] Optionally, the first beam expansion mechanism 6 may be an electronically controlled component, which may adjust and control the beam expansion ratio of the first beam expansion mechanism 6 according to a control instruction or a regulation instruction of the system master control device 202 .

[0113] Optionally, the first beam expansion mechanism 6 may be a laser beam expansion collimator.

[0114] The focusing mechanism 7a and the first scanning focusing mechanism 7b can form a laser control mechanism 8 for controlling laser parameters such as focal length and focal plane and realizing scanning parameters such as scanning path. The focusing mechanism 7a is used to adjust the focal length of the laser incident on the surface of the sample 10 in the laser surface treatment chamber 11 and the angle between the focal plane of the laser and the surface of the sample 10 in the laser surface treatment chamber 11. The focusing mechanism 7a can include a field lens, which is also called a flat-field focusing lens or F-theta lens. Unlike ordinary spherical lenses that can only focus on curved surfaces, the field lens is specially designed so that the incident laser beam can be focused on the surface of the sample 10 in the laser surface treatment chamber 11 after it is focused and emitted. The incident angle of the incident laser is linearly related to the position of the emitted laser. When used in conjunction with the first scanning focusing mechanism 7b, the focusing position of the laser on the surface of the sample 10 in the laser surface treatment chamber 11 can be precisely controlled. The focusing mechanism 7a may include an electronic control component, which can adjust the focusing parameters such as the focal length and focal plane of the laser incident on the surface of the sample 10 in the laser surface processing chamber 11 according to the control instructions or adjustment instructions of the system master control device 202.

[0115] The first scanning focusing mechanism 7b is used to use the laser emitted by the focusing mechanism 7a to perform laser scanning on the sample 10 in the laser surface treatment chamber 11, and the scanning parameters such as the scanning speed and scanning step length are set and adjusted according to the instructions of the system main control device 202. Optionally, the first scanning focusing mechanism 7b includes a galvanometer, which is composed of two reflectors respectively connected to the swing motor. A specific path is set on the computer side and the motion signal is sent to the system main control device 202. The system main control device 202 controls the rotation of the reflector by controlling the motor, so that the laser swings along the specific path on the surface of the sample 10 in the laser surface treatment chamber 11, and cooperates with the movement of the carrier (not shown) for carrying the sample 10 in the laser surface treatment chamber 11, thereby scanning the surface of the sample 10 in the laser surface treatment chamber 11, realizing ultrafast laser serial processing, quickly removing the mask material layer on the sample 10 in the laser surface treatment chamber 11 or polishing the mask substrate after the film is removed.

[0116] The first transition chamber 12 is disposed between the laser surface treatment chamber 11 and the deposition chamber 19, and is used to queue the sample 10 in front of the laser surface treatment chamber 11 and in front of the deposition chamber 19. The robot transfer device 12a is used to transfer the mask substrate (i.e., the sample 10) between the laser surface treatment chamber 11, the first transition chamber 12, and the deposition chamber 19.

[0117] The example shown in FIG8 enables the laser surface treatment device 201 to perform a laser surface treatment function such as laser de-filming or laser polishing, and utilizes the same pulsed laser to perform a pulsed laser deposition function. The laser surface treatment device 201 and the pulsed laser deposition device 200 are integrated on the same process machine, and optical components such as the laser 1, shutter 2, quarter-wave plate 3, polarizer 4, and first beam splitter 5 are multiplexed, simplifying the machine structure and contributing to reduced machine size and equipment costs. Furthermore, during the manufacture of the blank mask, the sample 10 can be moved back and forth between the laser surface treatment chamber 11 and the deposition chamber 19 based on the detection results of the detection device 203, thereby ensuring product yield.

[0118] As another example, referring to FIG9 , the manufacturing system of this example differs from the manufacturing system shown in FIG8 in that it further includes a surface topography detection unit 30, which is installed in the laser surface treatment chamber 11 and is regarded as a part of the laser surface treatment device 201, or as a corresponding part of the detection device 203 integrated with the laser surface treatment device 201. Specifically, the surface topography detection unit 30 may include a scanning probe microscope (SPM). A scanning probe microscope (SPM) is a general term for a class of instruments, which mainly include a scanning tunneling microscope (STM) and a scanning force microscope (SFM) represented by an atomic force microscope (AFM). Referring to Figure 9, the two key components of the SPM are the probe 35 and the scanner. The scanner includes a scanning light source 33 and a scanning drive cantilever 34. The probe 35 is installed at the front end of the scanning drive cantilever 34. The distance between the probe 35 and the sample 10 in the laser surface treatment chamber 11 is controlled by the movement of the scanner. When the probe 35 and the sample 10 in the laser surface treatment chamber 11 are close to a certain degree, if there is a physical quantity P=P(z) that is sensitive enough and changes monotonically with the distance between the probe 35 and the sample 10 in the laser surface treatment chamber 11 (for example, the van der Waals force), then this physical quantity can be detected by the feedback system (FS) composed of the signal receiver 32 and the signal processor 31, and then the surface position and corresponding height information of the sample 10 in the laser surface treatment chamber 11 (that is, the surface roughness information of the sample 10 in the laser surface treatment chamber 11) is obtained, thereby depicting the surface morphology of the sample 10 in the laser surface treatment chamber 11. The signal processor 31 also feeds back the surface morphology detection results it obtains to the system master control device 202, so that the system master control device 202 can issue corresponding instructions to the laser 1, the first beam expansion mechanism 6, the focusing mechanism 7a and the first scanning focusing mechanism 7b to adjust the process parameters of the laser surface treatment.

[0119] The example shown in FIG9 , in addition to implementing the functions of the example shown in FIG8 , further implements the function of online, real-time adjustment of laser surface treatment process parameters based on the online detection results of the surface topography detection unit 30 As another example, referring to FIG10 , the manufacturing system of this example differs from the manufacturing system shown in FIG9 in that it further includes a laser 41 , a reflection system, and a beam combining mechanism 40 .

[0120] Among them, the lasers generated by laser 1 and laser 41 are different. And when the laser generated by laser 41 is used as the first laser and is used for laser film removal, the laser generated by laser 1 is used as the second laser and is used for laser polishing. When the laser generated by laser 1 is used as the first laser and is used for laser film removal, the laser generated by laser 41 is used as the second laser and is used for laser polishing. And one of the first laser and the second laser is also used for pulsed laser deposition and pulsed laser direct writing. At this time, the laser is a pulsed laser with a pulse width at any suitable level such as microseconds, nanoseconds, femtoseconds or picoseconds. The other of the first laser and the second laser comes from a different laser from the pulsed laser used in the pulsed laser deposition process. The other can be a pulsed laser with a pulse width at any suitable level such as microseconds, nanoseconds, femtoseconds or picoseconds. The other can also be a continuous wave (CW) laser or a quasi-continuous wave (QCW) laser.

[0121] Optionally, the laser 1 is a femtosecond pulse laser and the pulse laser generated is used as a second laser for laser polishing, and the laser generated by the laser 1 is also used for pulse laser deposition.

[0122] The reflection system can be reasonably set or omitted according to the laser angle emitted by the laser 41 and the laser incident angle allowed by the beam combining mechanism 40. In this example, the reflection system includes mirrors 42 and 43, which are used to reflect the laser emitted by the laser 41 into the beam combining mechanism 40. The beam combining mechanism 40 receives the pulsed laser generated by the first beam splitter 5 and the pulsed laser generated by the laser 41 in a time-sharing manner, and injects the received pulsed laser (i.e., the first laser or the second laser) into the first beam expanding mechanism 6 at the same angle. Optionally, the beam combining mechanism 40 may have an electronic control component that can control and adjust the laser emission angle according to the control instructions or adjustment instructions of the system master control device 202.

[0123] The example shown in FIG10 not only realizes the functions of the example shown in FIG9 , but also further realizes the compatibility of two laser surface treatment methods, laser film removal and laser polishing.

[0124] In addition, it should be understood that the specific structures shown in Figures 8 to 10 are merely illustrative and do not indicate that the manufacturing system of this embodiment only has the structures shown in the figures. It may further include any appropriate optical or electronic components required accordingly. For example, referring to Figure 8, a reflector is provided between the first beam expander 6 and the focusing mechanism 7a, so that the laser light emitted by the first beam expander 6 is transmitted to the focusing mechanism 7a at an optimal angle. For example, with respect to the arrangement of the focusing mechanism 7a and the first scanning focusing mechanism 7b in Figure 8, the focusing mechanism 7a may be arranged at the rear and the first scanning focusing mechanism 7b at the front. And with respect to the arrangement of the first beam expander 6 and the beam combining mechanism 40 in Figure 10, the first beam expander 6 may be arranged at the front and the beam combining mechanism 40 at the rear.

[0125] In summary, the mask manufacturing method and manufacturing system of the present embodiment can perform online performance testing on the blank mask after pulsed laser deposition. When the performance of the blank mask does not meet the standard, the blank mask can be promptly subjected to laser surface treatment, or even pulsed laser deposition can be performed again. Thus, through the cyclic execution of the steps of pulsed laser deposition (PLD), detection, and laser surface treatment (laser demolding or laser demolding followed by laser polishing), it can be ensured that the performance of the blank mask finally formed meets the target, and then the blank mask that meets the performance target can be laser directly written to obtain a mask with a pattern, thereby improving the manufacturing yield of the mask (i.e., reducing the scrap rate of the mask), thereby relatively reducing the manufacturing cost of the mask.

[0126] Furthermore, when it is detected that the performance of the blank mask does not meet the standards, the parameters of the pulsed laser deposition process are adjusted to perform subsequent pulsed laser deposition based on the adjusted parameters. The pulsed laser deposition process has a high target material utilization rate and can improve the manufacturing efficiency of the mask.

[0127] Third embodiment

[0128] As described in the background, with the increasing integration density of semiconductor devices and the shrinking feature sizes, the number of reticles required for semiconductor device fabrication is increasing. Furthermore, as process node size decreases, the manufacturing cost of the reticles themselves and the cost of discarding substandard reticles are also increasing, resulting in high semiconductor device production costs. Furthermore, the number of discarded reticles that are no longer usable is also increasing exponentially. The disposal and management of discarded reticles incurs significant costs. The low utilization rate of high-priced reticles not only wastes resources but also imposes a significant burden on companies.

[0129] Based on this, please refer to FIG11 , this embodiment provides a method for manufacturing a mask, which can recycle and reuse discarded masks, thereby reducing the manufacturing cost of new masks. The manufacturing method includes the following steps:

[0130] S0, providing a mask to be discarded, and performing laser surface treatment on the mask to be discarded on the process machine to remove a film layer on the mask substrate of the mask to be discarded, thereby obtaining the mask substrate;

[0131] S1, performing pulsed laser deposition on a mask substrate using a pulsed laser on the process machine to form a desired mask material layer on the mask substrate to obtain a blank mask;

[0132] S2, further using the pulse laser to perform laser direct writing on the mask material layer on the process machine to form a desired pattern in the mask material layer to obtain a mask.

[0133] Wherein, step S1 may further include cyclically executing the following sub-steps:

[0134] S11, using the pulse laser to perform pulse laser deposition on the mask substrate on the process machine to obtain a blank mask having a corresponding mask material layer;

[0135] S12, detecting whether the performance of the blank mask meets the target;

[0136] S13: When it is detected that the performance of the reticle blank does not meet the requirements, a corresponding laser surface treatment method is selected based on the detection result, and the reticle blank is subjected to laser surface treatment on the process machine to trim the surface of the mask material layer, or to remove the mask material layer and trim the surface of the mask substrate. Steps S1 and S2 are the same as those in the second embodiment and are not repeated here.

[0137] The mask to be discarded provided in step S0 can be any mask that needs to be discarded. The reasons for discarding these masks may be as follows: (1) the performance of the mask is degraded after being used multiple times (for example, the CD value of the feature size is reduced, etc.) and it cannot be used anymore and needs to be discarded; (2) when the blank mask is patterned to manufacture a mask with a pattern, the mask with a pattern produced is unqualified due to various reasons and needs to be discarded; (3) the blank mask itself has defects on its surface and needs to be discarded; (4) during the process of manufacturing or repairing the mask, it is found that the manufactured photomask has pattern defects that are difficult to repair and needs to be discarded as a defective product.

[0138] Based on this, in this embodiment, the mask plates to be discarded provided in step S0 can be divided into the following 6 types: (1) the mask plates to be discarded include a mask substrate, a mask material layer without a pattern (including at least one metal film without a pattern, etc.) located on the mask substrate, and a photoresist without a pattern located on the mask material layer; (2) the mask plates to be discarded include a mask substrate, a mask material layer with a pattern (including at least one metal film with a pattern, etc.) located on the mask substrate, and a photoresist with a pattern located on the mask material layer; (3) the mask plates to be discarded include a mask substrate, a mask material layer with a pattern (including at least one metal film with a pattern, etc.) located on the mask substrate, and a photoresist with a pattern located on the mask material layer; (4) the mask plate to be discarded includes a mask substrate and a patternless mask material layer (including a patternless phase shift film and at least one patternless metal film) located on the mask substrate, and a patternless photoresist located on the mask material layer; (5) the mask plate to be discarded includes a mask substrate, a patterned mask material layer (including a patterned or patternless phase shift film and at least one patterned metal film) located on the mask substrate, and a patterned photoresist located on the mask material layer; (6) the mask plate to be discarded includes a mask substrate, a mask material layer (including a patterned or patternless phase shift film and at least one patterned metal film) located on the mask substrate. The above-mentioned metal film may include a laminated layer such as a light-shielding film and an anti-reflection film.

[0139] As an example, referring to FIG. 2 , the mask to be discarded provided in step S0 is a binary blankmask that needs to be discarded, which specifically includes a mask substrate 101 (which may be a transparent substrate), a back anti-reflection film 103, a light shielding film 104, and an anti-reflection film 105 stacked in sequence from bottom to top. The back anti-reflection film 103, the light shielding film 104, and the anti-reflection film 105 are three layers of mask material located on the mask substrate 100. The areas where the back anti-reflection film 103, the light shielding film 104, and the anti-reflection film 105 are stacked are opaque, while the areas where the back anti-reflection film 103, the light shielding film 104, and the anti-reflection film 105 are not stacked are transparent, thereby forming a pattern. The light shielding film 104 may include one of CrN, CrC, and CrCN, and the back anti-reflection film 103 and the anti-reflection film 105 may include one of CrO, CrON, and CrCON.

[0140] As another example, referring to FIG. 3 , the mask to be discarded provided in step S0 is a phase shift blankmask to be discarded, which specifically includes a mask substrate 101 (which may be a transparent substrate), a phase shift film 102, a back anti-reflection film 103, a light shielding film 104, and an anti-reflection film 105 stacked in sequence from bottom to top. The phase shift film 102, the back anti-reflection film 103, the light shielding film 104, and the anti-reflection film 105 constitute a mask material layer, and the areas where the back anti-reflection film 103, the light shielding film 104, and the anti-reflection film 105 are stacked are opaque, while the areas where the back anti-reflection film 103, the light shielding layer 104, and the anti-reflection film 105 are not stacked are translucent, thereby forming a pattern. The material of the phase shift film 102 may include at least one of a Cr compound (such as chromium oxide, chromium nitride, or chromium oxynitride), MoSi, and a MoSi compound (such as MoSiON, MoSiCON, MoSiN, MoSiCN, or MoSiCO).

[0141] In summary, regardless of the type of reticle provided as the discarded reticle in step S0, its overall structure includes a mask substrate and a mask material layer located on the mask substrate. The mask substrate may be any of a quartz substrate, a soda-lime substrate, and a borosilicate substrate. Step S0 requires removing the mask material layer located on the mask substrate and ensuring that the top surface flatness (or surface roughness) of the recovered mask substrate meets the requirements for manufacturing a new blank reticle.

[0142] It should be understood that any suitable laser surface treatment method can be used in step S0 to remove all film layers from the mask substrate of the discarded mask, and ensure that the top surface performance of the recycled mask substrate meets the requirements for manufacturing a new blank mask. As an example, the laser surface treatment method used in step S0 is selected from the laser surface treatment methods that can be used in sub-step S13.

[0143] Specifically, referring to Figures 11 and 12, in step S0, a first laser is first used to perform laser stripping on the discarded mask to remove the mask material layer on its mask substrate, and then a second laser is used to laser polish the surface of the mask substrate so that the surface roughness of the mask substrate meets the requirements for manufacturing a new blank mask. Optionally, in step S0, using sub-step S12, during the process of laser stripping the discarded mask, the surface morphology of the discarded mask is detected online and in real time, so that the process parameters for laser stripping the mask substrate surface are adjusted online and in real time based on the detection results (for example, adjusting the wavelength, power, scanning path, focal length, focal plane, etc. of the first laser). Further optionally, in step S0, during the process of laser polishing the mask substrate, the surface morphology of the mask substrate is detected online and in real time, so that the process parameters for laser polishing the mask substrate surface are adjusted online and in real time based on the detection results (for example, adjusting the wavelength, power, scanning path, focal length, focal plane, etc. of the first laser).

[0144] Therefore, in step S0, after performing the processes of laser stripping, surface morphology detection and laser polishing in sequence as needed and cycling these processes, it can be ensured that the recovered mask substrate can be directly used in the manufacture of new blank masks, shortening the manufacturing cycle and reducing the manufacturing cost of blank masks.

[0145] After providing a mask substrate that meets the requirements in step S0, step S1 is first executed (i.e., steps S11 to S13 are executed in a loop), and then a new blank mask plate with performance that meets the requirements is manufactured based on the recycled mask substrate, and then step S2 is executed to perform laser direct writing on the blank mask plate.

[0146] Furthermore, the laser surface treatment method for the discarded mask in step S0 is the same as the laser surface treatment method for the new blank mask that does not meet the standards in sub-step S13. However, the film depth of the laser surface treatment in step S0 and sub-step S13 can be different.

[0147] It should also be understood that the laser de-filming and laser polishing processes in step S0 and sub-step S13 are substantially the same as those in the second embodiment, and therefore will not be described in detail herein.

[0148] Similarly, in sub-step S12, once it is detected that the performance of the new blank mask does not meet the standard, the new blank mask that does not meet the standard can be regarded as a mask to be discarded, and then the entire process or part of the process from the laser surface treatment in step S0 can be selected as sub-step S13 to rework or repair the new blank mask that does not meet the standard according to the selected process (that is, looping steps S11 to S13) until the performance of the new blank mask meets the standard.

[0149] It can also be said that compared with the second embodiment, the manufacturing method of this embodiment is different from that of the second embodiment, because the mask to be discarded is provided at the beginning, and therefore the entire process starts from sub-step S13, that is, sub-step S13 (that is, step S0) is executed once before the first pulsed laser deposition, and the mask to be discarded is processed into a mask substrate that can be used for the manufacture of a new blank mask. Thereafter, sub-steps S11 to S13 can be executed cyclically until the performance of the manufactured blank mask reaches the target, thereby reducing the manufacturing cost of the new blank mask and ensuring its manufacturing yield, thereby reducing the manufacturing cost of the mask with the desired pattern and ensuring the manufacturing yield of the mask with the desired pattern.

[0150] Furthermore, the manufacturing system used to implement the reticle manufacturing method of this embodiment can be the same as the reticle manufacturing system of the second embodiment, and will not be described in detail here. In summary, the reticle manufacturing method of this embodiment, because it recycles and reuses discarded reticles, can further reduce the manufacturing cost of blank reticles compared to the solution of the second embodiment.

[0151] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure are within the scope of protection of the technical solution of the present invention.

Claims

1. A method for manufacturing a mask, It is characterized in that The following steps are involved: S1, performing pulsed laser deposition on a mask substrate using a pulsed laser on a process machine to form a desired mask material layer on the mask substrate to obtain a blank mask; S2, further using the pulse laser to perform laser direct writing on the mask material layer on the process machine to form a desired pattern in the mask material layer to obtain a mask plate; Wherein, the step S1 includes cyclically executing the following sub-steps: S11, using the pulse laser on the process machine to perform pulse laser deposition on the mask substrate to obtain a blank mask having a corresponding mask material layer; S12, detecting whether the performance of the blank mask reaches the target; S13, when it is detected that the performance of the blank mask is not up to standard, a corresponding laser surface treatment method is selected according to the detection result, and the blank mask is subjected to laser surface treatment on the process machine to trim the surface of the mask material layer, or the mask material layer is removed and the surface of the mask substrate is trimmed.

2. The manufacturing method according to claim 1, It is characterized in that The pulse width of the pulse laser in the laser direct writing process is in the microsecond level, nanosecond level, femtosecond level or picosecond level.

3. The manufacturing method according to claim 1, It is characterized in that Before executing step S1, step S0 is also included, providing a mask plate to be discarded, and performing laser surface treatment on the mask plate to be discarded on the process machine to remove the film layer on the mask substrate of the mask plate to be discarded to obtain the mask substrate.

4. The manufacturing method according to claim 3, It is characterized in that The method of laser surface treatment of the discarded mask plate includes one of the following three methods: In a first manner, the first laser is used to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; The second method is to use the second laser to laser polish the surface of the film layer on the mask substrate; A third method is to first use the first laser for laser film removal and then use the second laser for laser polishing.

5. The manufacturing method according to claim 1, It is characterized in that The method of laser surface treatment of the blank mask includes one of the following three methods: In the first method, a first laser is used to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; The second method is to use a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; A third method is to first use the first laser for laser film removal and then use the second laser for laser polishing; Wherein, the first laser or the second laser is the pulse laser.

6. The manufacturing method according to claim 1 or 3, It is characterized in that During the laser surface treatment process, the surface morphology of the film layer on the mask substrate is detected online on the process machine, and the process parameters of the laser surface treatment process are adjusted online according to the result of the surface morphology detection.

7. The manufacturing method according to claim 1, It is characterized in that In step S12, detecting whether the performance of the blank mask basic structure reaches the target includes: detecting whether at least one performance index among the thickness and surface flatness of the mask material layer and the transmittance and reflectivity of the blank mask reaches the target.

8. The manufacturing method according to claim 1, It is characterized in that When it is detected in step S12 that the performance of the blank mask does not meet the standard, the process parameters of the pulsed laser deposition are also adjusted so that after the laser surface treatment in step S13 is completed and when step S11 needs to be performed again, the corresponding pulsed laser deposition process can be performed on the blank mask after the laser surface treatment based on the adjusted parameters in step S11.

9. A mask manufacturing system, It is characterized in that Including integrated in the same process machine: A pulse laser deposition device, used to perform pulse laser deposition on a mask substrate using the pulse laser on the process machine, so as to form a required mask material layer on the mask substrate to obtain a blank mask plate; A pulse laser direct writing device, used to further use the pulse laser on the process machine to perform laser direct writing on the mask material layer to form a desired pattern in the mask material layer to obtain a mask plate; A detection device, used to detect whether the performance of the blank mask reaches the target; A laser surface treatment device, used for performing laser surface treatment on the blank mask on the process machine to trim the surface of the mask material layer, or to remove the mask material layer and trim the surface of the mask substrate; The system master control device is coupled to the pulse laser deposition device, the pulse laser direct writing device, the laser surface treatment device and the detection device, and is used to control the pulse laser deposition device and the pulse laser direct writing device to work in coordination. When the detection device detects that the performance of the blank mask does not meet the target, the system master control device, the detection device and the laser surface treatment device to work in coordination, so that the mask substrate circulates among the pulse laser deposition device, the detection device and the laser surface treatment device until the performance of the blank mask reaches the target.

10. The manufacturing system according to claim 9, It is characterized in that The pulse width of the pulse laser in the laser direct writing process is in the microsecond level, nanosecond level, femtosecond level or picosecond level.

11. The manufacturing system according to claim 9, It is characterized in that The laser surface treatment device performs laser surface treatment on the blank mask in one of the following three ways: In the first method, a first laser is used to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; The second method is to use a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; A third method is to first use the first laser for laser film removal and then use the second laser for laser polishing; And the first laser or the second laser is the pulse laser.

12. The manufacturing system according to claim 9, It is characterized in that The laser surface treatment device is also used to initially perform laser surface treatment on the discarded mask plate using the pulse laser or another laser on the process machine to remove the film layer on the mask substrate of the discarded mask plate to obtain the mask substrate required in the pulse laser deposition device.

13. The manufacturing system according to claim 12, It is characterized in that The laser surface treatment device performs laser surface treatment on the discarded mask in one of the following three ways: In the first method, a first laser is used to perform laser film removal to remove a film layer of corresponding thickness on the mask substrate; The second method is to use a second laser different from the first laser to laser polish the surface of the film layer on the mask substrate; A third method is to first use the first laser for laser film removal and then use the second laser for laser polishing; Wherein, the first laser or the second laser is the pulse laser.

14. The manufacturing system according to claim 13, It is characterized in that The first laser or the second laser is transmitted to the laser surface treatment device, the pulse laser deposition device and the pulse laser direct writing device respectively through a shutter, a quarter wave plate and a polarizer, a first beam splitter and a second beam splitter arranged in sequence along the optical path.

15. The manufacturing system according to claim 13, It is characterized in that The laser surface treatment device includes a first beam expansion mechanism, a focusing mechanism and a first scanning focusing mechanism; the first beam expansion mechanism is used to enlarge the beam spot of the received first laser or second laser and then output it; the focusing mechanism is used to focus the laser emitted by the first beam expansion mechanism; the first scanning focusing mechanism is used to control the laser emitted by the focusing mechanism to be focused and incident on the surface of the mask substrate in the de-filming chamber or on the surface of the film layer on the mask substrate, so as to realize laser scanning of the mask substrate.

16. The manufacturing system according to claim 15, It is characterized in that It also includes a first laser, a second laser and a beam combining mechanism, wherein the first laser is used to provide the first laser, the second laser is used to provide the second laser, and the beam combining mechanism is used to receive the first laser and the second laser in a time-sharing manner and emit the received lasers along the same angle to the first beam expanding mechanism.

17. The manufacturing system according to claim 9, It is characterized in that The detection device is used to detect whether at least one performance index among the thickness and surface flatness of the mask material layer and the transmittance and reflectance of the blank mask plate reaches a target.

18. The manufacturing system according to claim 9, It is characterized in that It also includes a first transition chamber, a robot conveying device and a second transition chamber. The first transition chamber is arranged between the chamber of the laser surface processing device and the deposition chamber of the pulsed laser deposition device, and the second transition chamber is arranged between the deposition chamber and the chamber of the laser direct writing device. The robot conveying device is used to realize the transfer of the mask substrate between the chamber of the laser surface processing device, the first transition chamber, the deposition chamber, the second transition chamber and the chamber of the laser direct writing device.

19. The manufacturing system according to claim 9, It is characterized in that The pulse laser deposition device comprises a first focusing mechanism, a deposition chamber, and a carrier and a target material arranged in the deposition chamber. The first focusing mechanism is used to focus the corresponding laser light onto the target material, and the carrier is used to carry a mask substrate.

20. The manufacturing system according to claim 9, It is characterized in that The pulse laser direct writing device comprises a reflector, a second beam expansion mechanism, a first dichroic prism, a second dichroic prism, and a second scanning focusing mechanism which are sequentially arranged along the optical path.

21. The manufacturing system according to claim 20, It is characterized in that The pulse laser direct writing device also includes an illumination light source, a second focusing mechanism and a detector. The illumination light source is used to provide illumination light to the first dichroic prism, and the second focusing mechanism is used to focus a portion of the laser light at the second dichroic prism into the detector.

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