Laser module

Abstract

The present application relates to the technical field of photoelectricity, and disclosed thereby are a laser and a laser module. The laser comprises a frame body, a base plate, a heat sink, a light-emitting chip, and a protection device. The frame body and the heat sink are both fixed on the base plate, and the heat sink, the light-emitting chip, and the protection device are all located inside the frame body. The light-emitting chip and the protection device are both fixed on the heat sink, and the light-emitting chip and the protection device are spaced apart in the length direction of the heat sink. The present application solves the problem of heat dissipation of the laser.

Description

Laser module

[0001] This application claims priority to Chinese patent application No. 202310723380.0, filed on June 16, 2023, with the invention name “Light-emitting device”, Chinese patent application No. 202310773058.9, filed on June 28, 2023, with the invention name “Laser”, Chinese patent application No. 202321670807.7, filed on June 28, 2023, with the utility model name “Laser”, and Chinese patent application No. 202322406540.7, filed on September 5, 2023, with the utility model name “A laser module”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of optoelectronic technology, and in particular to a laser module. Background Art

[0003] With the development of optoelectronic technology, laser modules are widely used.

[0004] In related technologies, lasers are a crucial component of laser modules. These components include a light-emitting chip and protective components, which are spaced apart. The light-emitting chip generates heat when emitting laser light. Furthermore, as the chip continues to emit light, heat accumulation can easily cause the chip's temperature to exceed its upper operating temperature limit, affecting its light-emitting performance and potentially damaging it.

[0005] Summary of the Invention

[0006] The present application provides a laser module that can solve the problem of high laser operating temperature. The laser module includes a laser, which includes a frame, a substrate, a heat sink, a light-emitting chip, and a protective device. The frame and heat sink are both fixed to the substrate. The heat sink, the light-emitting chip, and the protective device are all located inside the frame. The light-emitting chip and the protective device are both fixed to the heat sink. The light-emitting chip and the protective device are spaced apart along the length of the heat sink. The orthographic projection of the light-emitting chip and the orthographic projection of the protective device partially overlap or are spaced apart along the length of the heat sink. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0008] FIG1 is a schematic structural diagram of a light-emitting device in a related art according to an embodiment of the present application;

[0009] FIG2 is a schematic structural diagram of a light-emitting device in a related art according to an embodiment of the present application;

[0010] FIG3 is a schematic structural diagram of a light emitting device in one embodiment of the present application;

[0011] FIG4 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0012] FIG5 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0013] FIG6 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0014] FIG7 is a schematic cross-sectional view of a light emitting device in an embodiment of the present application;

[0015] FIG8 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0016] FIG9 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0017] FIG10 is a schematic diagram of the connection between an electrical probe, a heat sink, and a light-emitting chip in a related art according to an embodiment of the present application;

[0018] FIG11 is a schematic diagram of an electrical probe connected to a heat sink and a light-emitting chip in one embodiment of the present application;

[0019] FIG12 is a schematic diagram of an electrical probe connected to a heat sink and a light-emitting chip in one embodiment of the present application;

[0020] FIG13 is a schematic diagram of a partial structure of a light emitting device in a related art in an embodiment of the present application;

[0021] FIG14 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0022] FIG15 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0023] FIG16 is a schematic diagram of a partial structure of a light emitting device in a related art in an embodiment of the present application;

[0024] FIG17 is a schematic diagram of a partial structure of a light emitting device in an embodiment of the present application;

[0025] FIG18 is a side view of a laser according to another embodiment of the present application;

[0026] FIG19 is a light path diagram of laser light emitted from a light-emitting chip in a laser according to another embodiment of the present application;

[0027] FIG20 is a light path diagram of laser light emitted from a light emitting chip when the thickness of a heat sink is relatively small in another embodiment of the present application;

[0028] FIG21 is a light path diagram of laser light emitted from another light-emitting chip in another embodiment of the present application;

[0029] FIG22 is a schematic diagram of a light-emitting chip fixed on a heat sink in another embodiment of the present application;

[0030] FIG23 is a schematic diagram of simulating the heating of a light-emitting chip in another embodiment of the present application;

[0031] FIG24 is a schematic structural diagram of a heat sink in another embodiment of the present application;

[0032] FIG25 is a top view of another laser in another embodiment of the present application;

[0033] FIG26 is a cross-sectional view of the laser shown in FIG8 at AA';

[0034] FIG27 is a cross-sectional schematic diagram of yet another laser according to another embodiment of the present application;

[0035] FIG28 is a cross-sectional schematic diagram of yet another laser according to another embodiment of the present application;

[0036] FIG29 is a schematic cross-sectional view of a laser module in a related art according to another embodiment of the present application;

[0037] FIG30 is a schematic diagram of the 3D structure of a laser module according to one or more embodiments of yet another embodiment of the present application;

[0038] FIG31 is a schematic planar structural diagram of a laser module according to one or more embodiments of yet another embodiment of the present application;

[0039] FIG32 is a schematic cross-sectional view of a laser module according to one or more embodiments of yet another embodiment of the present application;

[0040] FIG33 is a schematic diagram of the 3D structure of a laser module according to another embodiment of the present application or one or more embodiments;

[0041] FIG34 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0042] FIG35 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0043] FIG36 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0044] FIG37 is a schematic diagram of the planar structure of a base plate in another embodiment or embodiments of the present application;

[0045] FIG38 is a schematic cross-sectional view of a laser module according to another embodiment of the present application or in another embodiment of one or more embodiments;

[0046] FIG39 is a schematic cross-sectional view of a laser module according to another embodiment of the present application or in another embodiment of one or more embodiments;

[0047] FIG40 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0048] FIG41 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0049] FIG42 is a schematic planar structural diagram of a laser module according to another embodiment or embodiments of the present application;

[0050] FIG43 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0051] FIG44 is a schematic diagram of a planar structure of a laser according to one or more embodiments of yet another embodiment of the present application;

[0052] FIG45 is a schematic diagram of a cross-sectional structure of a laser according to one or more embodiments of yet another embodiment of the present application;

[0053] FIG46 is a schematic planar structural diagram of a laser module according to another embodiment or embodiments of the present application;

[0054] FIG47 is a schematic cross-sectional view of a laser module according to another embodiment of the present application;

[0055] FIG48 is a schematic diagram of the 3D structure of a laser module according to another embodiment or embodiments of the present application;

[0056] FIG49 is a schematic diagram of the planar structure of a laser module of one or more other embodiments in yet another embodiment of the present application. DETAILED DESCRIPTION

[0057] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0058] In recent years, miniaturization and portability of electronic devices have become a major trend. In the display industry, traditional LCD TVs, due to their large size and weight, are no longer the primary choice for consumers. Smaller, lighter display products like micro-projectors are becoming increasingly popular. Driven by this trend, laser modules, as core components of display products, are naturally also becoming increasingly miniaturized.

[0059] A laser module primarily consists of a laser and a baseplate, which are connected to each other and electrically connected via pins. The baseplate provides a mounting base for the laser, while the laser emits laser light, making it a key functional component in the laser module. Let's first explain the emitter.

[0060] In the related art, the laser includes a frame 1, a substrate 2, a heat sink 3, a light-emitting chip 4, and a protective device 5. The frame 1 and the heat sink 3 are both fixed to the substrate 2, and the heat sink 3 is located inside the frame 1. The light-emitting chip 4 and the protective device 5 are located on the heat sink 3. The laser includes multiple heat sinks 3, and each heat sink 3 has a light-emitting chip 4 and a protective device 5.

[0061] To achieve miniaturization during the light-emitting period, it is necessary to mount the same or even more light-emitting chips 4 (heat sinks 3) within a smaller laser frame 1. This means densely arranging the light-emitting chips 4 within the frame 1. This means reducing the distance L between adjacent light-emitting chips 4, which leads to severe heat accumulation and hinders heat dissipation. As shown in Figure 1, the distance L between adjacent light-emitting chips 4 is affected by the width of the light-emitting chips 4, the width of the heat sink 3, and the overflow size of the glue 6 used to attach the heat sink 3.

[0062] Currently, due to technical limitations, the size of the light-emitting chip 4 cannot be reduced. Furthermore, due to equipment capabilities and reliability requirements, the overflow area of ​​the glue 6 cannot be further reduced, otherwise it will easily cause the heat sink 3 to fall off. Therefore, reducing the width of the heat sink 3 has become the key to solving the problem of laser miniaturization.

[0063] In addition, since the antistatic capability of the light emitting chip 4 is relatively weak, a protection device 5 needs to be placed on the heat sink 3 in parallel with the light emitting chip 4 to protect the light emitting chip 4 .

[0064] In the related art, as shown in Figure 2, the protective device 5 is soldered to the heat sink 3, and the light-emitting chip 4 and the protective device 5 are arranged side by side along the width direction X of the heat sink 3. Because there is a certain degree of error in the placement of the light-emitting chip 4 and the protective device 5 in the equipment, a certain safety distance a must be left between the light-emitting chip 4 and the protective device 5 to prevent collision. This results in the width dimension m + a + n occupied by the light-emitting chip 4 and the protective device 5, resulting in a relatively large width of the heat sink 3. In this case, the size of the heat sink 3 is difficult to further reduce.

[0065] In view of the above technical problems, in one embodiment of the present application, a laser is provided, as shown in Figures 3 and 4. The laser includes a frame 1, a substrate 2, a heat sink 3, a light-emitting chip 4, and a protective device 5. The frame 1 and the heat sink 3 are both fixed to the substrate 1, and the heat sink 3, the light-emitting chip 4, and the protective device 5 are all located inside the frame 1. The light-emitting chip 4 and the protective device 5 are fixed to the heat sink 3, and the light-emitting chip 4 and the protective device 5 are spaced apart in the longitudinal direction Y of the heat sink 3.

[0066] The component composed of the heat sink 3 , the light emitting chip 4 and the protection device 5 may be referred to as a COS (Chip On Submount, embedded chip).

[0067] The light-emitting chip 4 can also be called a blue-green chip. The width of the light-emitting chip 4 can be 0.1 mm to 0.3 mm, for example, 0.2 mm. The light-emitting point of the light-emitting chip 4 is located at the end of the light-emitting chip 4 away from the protective device 5. This end is referred to as the front end of the light-emitting chip 4, and the end closer to the protective device 5 is referred to as the rear end of the light-emitting chip 4. The light-emitting chip 4 generates a large amount of heat during operation, and the heat sink 3 is used to absorb the heat emitted by the light-emitting chip 4.

[0068] The protective device 5 can also be called a protection element. The protective device 5 can be a Zener diode or a voltage regulator. The width of the protective device 5 can be 0.2-0.4 mm. For example, the width of the protective device 5 can be 0.3 mm. The protective device 5 is connected in parallel with the light-emitting chip 4 to improve the anti-static ability of the light-emitting chip 4.

[0069] The laser provided in the embodiment of the present application provides a spacing between the light-emitting chip 4 and the protective device 5 in the length direction of the heat sink 3, so that there is no need for a safety distance between the light-emitting chip 4 and the protective device 5 in the width direction. Therefore, the size occupied by the light-emitting chip 4 and the protective device 5 in the width direction can be reduced, so that the width of the laser is reduced, which is conducive to the miniaturization of the laser.

[0070] In addition, it should be noted that since the length of the laser frame 1 is relatively long and the distance between two adjacent heat sinks 3 arranged along the length direction of the laser frame 1 is relatively long, compared with the laser in the related art, although the light-emitting chip 4 and the protective device 5 occupy a larger size in the length direction, it will not make the length of the frame 1 longer, and will not have an adverse effect on the miniaturization of the laser.

[0071] The following is an exemplary description of the arrangement of the light emitting chip 4 and the protection device 5:

[0072] In some examples, as shown in FIG. 4 and FIG. 5 , the projections of the light emitting chip 4 and the protection device 5 in the length direction Y of the heat sink 3 at least partially overlap.

[0073] In some examples, as shown in FIG5 , assuming that the length of the overlapping portion of the projections of the light-emitting chip 4 and the protection device 5 along the length direction Y of the heat sink 3 is c, the size occupied by the light-emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is m+nc.

[0074] Here, c may also be 0, in which case the side edge of the light emitting chip 4 and the side edge of the protection device 5 coincide with each other.

[0075] To further reduce the size occupied by the light-emitting chip 4 and the protective device 5 in the width direction X, in some examples, as shown in FIG4 , the projection of the light-emitting chip 4 in the length direction Y of the heat sink 3 entirely falls on the projection of the protective device 5 along the length direction Y of the heat sink 3. The width m of the light-emitting chip 4 is smaller than the width n of the protective device 5.

[0076] In this way, the dimension occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is the width n of the protection device 5 .

[0077] In other examples, the projection of the protection device 5 in the length direction Y of the heat sink 3 may all fall on the projection of the light emitting chip 4 in the length direction Y of the heat sink 3 .

[0078] In this way, the dimension occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is the width m of the light emitting chip 4 .

[0079] In both of the above cases, the size occupied by the light-emitting chip 4 and the protection device 5 in the width direction X can be minimized, and the width of the laser can be minimized.

[0080] In some examples, as shown in FIG. 4 , the symmetry axis of the light emitting chip 4 and the symmetry axis of the protection device 5 coincide with each other.

[0081] In some examples, the distance between the first axis A of the light emitting chip 4 and the second axis B of the protection device 5 in the width direction X of the heat sink 3 is 0-0.35 mm.

[0082] According to actual measurements, when the distance between the first axis A and the second axis B is 0-0.35 mm, the size occupied by the light emitting chip 4 and the protection device 5 in the width direction X of the heat sink 3 is smaller than that occupied by the existing solution.

[0083] In other examples, as shown in Fig. 6 , the projections of the light emitting chip 4 and the protection device 5 in the length direction Y of the heat sink 3 may not overlap. For example, the distance in the width direction is b.

[0084] In this case, since there is no need for a safety distance between the light emitting chip 4 and the protective device 5 in the width direction X, b can be smaller than the safety distance a in the related art, thereby still achieving the purpose of reducing the width of the heat sink 3. Among them, b can be as small as 0.

[0085] In some examples, as shown in FIG7 , the heat sink 3 includes a heat sink substrate 31 , a gold layer 32 , and a gold-tin layer 33 arranged in sequence, the width of the gold-tin layer 33 is smaller than the width of the gold layer 32 , and the width of the gold layer 32 is smaller than the width of the heat sink substrate 31 , and the light-emitting chip 4 and the protective device 4 are welded on the gold-tin layer 33 .

[0086] The structure of the gold-tin layer 33 is related to the arrangement of the light-emitting chip 4 and the protective device 5. The following is an exemplary description of the implementation of the gold-tin layer 33 in combination with the arrangement of the light-emitting chip 4 and the protective device 5:

[0087] In some examples, as shown in FIG. 4 and FIG. 5 , the gold-tin layer 33 is an integral gold-tin layer.

[0088] In this case, when the light-emitting chip 4 and the protective device 5 are welded to the heat sink 3, the gold-tin layer 33 only needs to be eutecticized once, and then the light-emitting chip 4 and the protective device 5 can be welded to the gold-tin layer 33, thereby saving the eutecticization time and improving the preparation efficiency of the laser.

[0089] In some examples, as shown in FIG. 4 , the AuSn layer 33 is in a long strip shape and extends along the length direction Y of the heat sink 3 , and the light emitting chip 4 and the protection device 5 are sequentially arranged along the length direction of the AuSn layer 33 .

[0090] In some examples, as shown in FIG5 , the AuSn layer 33 is L-shaped and includes a first region 331 and a second region 332. The first region 331 is an elongated strip extending along the length of the heat sink 3, while the second region 332 is located to one side of the first region 331. The light-emitting chip 4 is located in the first region 331, and the protective device 5 is partially located in the second region 332 and partially located in the first region 331.

[0091] In the above implementation, the gold-tin layer 33 is designed to be L-shaped, and a pre-set integrated L-shaped gold-tin welding can be performed between the light-emitting chip 4, the protective device 5 and the gold-tin layer 33. In this way, the light-emitting chip 4 and the protective device 5 can be welded at the same time, effectively improving the welding efficiency.

[0092] Of course, to achieve the above-mentioned integrated L-shaped gold-tin soldering, a safe distance is set between the light-emitting chip 4 and the protective device 5 in both the width direction X and the length direction Y. In the width direction X, the distance between the first axis A of the light-emitting chip 4 and the second axis B of the protective device 5 is greater than half the sum of the width m of the light-emitting chip 4 and the width n of the protective device 5.

[0093] This arrangement of the positional relationship between the light-emitting chip 4 and the protective device 5 reduces the width of the laser, facilitating the arrangement of more light-emitting chips 4 (within the same spatial range, the width of each packaged chip is reduced, leaving space for more chips to be arranged). Furthermore, during bonding, no obstruction or overlap occurs, thus improving bonding reliability and reducing difficulty.

[0094] Of course, in other examples, the gold-tin layer 33 may be in other shapes, as long as the above-mentioned arrangement of the light-emitting chip 4 and the protection device 5 can still be achieved, and the embodiments of the present application do not limit this.

[0095] In other examples, as shown in FIG8 , the gold-tin layer 33 includes a first gold-tin layer 33 a and a second gold-tin layer 33 b separated from each other, the first gold-tin layer 33 a and the second gold-tin layer 33 b having a spacing in the length direction Y of the heat sink 3 , the light-emitting chip 4 is located in the first gold-tin layer 33 a , and the protective device 5 is located in the second gold-tin layer 33 b .

[0096] The projections of the first AuSn layer 33 a and the second AuSn layer 33 b in the length direction Y of the heat sink 3 at least partially overlap.

[0097] In some examples, as shown in FIG. 8 , the second AuSn layer 33 b is located on one side of the first AuSn layer 33 a , and the projections of the first AuSn layer 33 a and the second AuSn layer 33 b in the length direction Y of the heat sink 3 partially overlap.

[0098] 9 , the projections of the first AuSn layer 33a and the second AuSn layer 33b along the length direction Y of the heat sink 3 completely overlap. In this case, the first axis A of the light emitting chip 4 and the second axis B of the protection device 5 may overlap.

[0099] After the eutectic formation of the light-emitting chip 4, protective device 5, and gold-tin layer 33 is complete, the laser needs to be subjected to an aging test. During this aging test, the laser needs to be placed on a heat sink and an electrical probe 7 is used to connect the gold layer 32, light-emitting chip 4, and the heat sink. After the aging test is complete, the electrical probe 7 is removed from the gold layer 32 and light-emitting chip 4.

[0100] In the related art, as shown in Figure 10, assuming that the second gold-tin layer 33b is located on the right side of the first gold-tin layer 33a, since there is a gap between the first gold-tin layer 33a where the light-emitting chip 4 is located and the second gold-tin layer 33b where the protection device 5 is located, the area of ​​the gold layer 32 on the right side of the first gold-tin layer 33a will be larger than the area of ​​the gold layer 32 on the left side of the first gold-tin layer 33a. At the same time, the position of the light-emitting chip 4 will be offset to the left relative to the axis of the heat sink 3, resulting in uneven distribution of the electrical probe 7 relative to the light-emitting chip 4.

[0101] In this way, on the one hand, because the electrical probe 7 is inserted into the gold layer 32, it exerts a tensile force on the gold layer 32, which in turn causes uneven forces to be applied to the gold layer 32 on the left side and the gold layer 32 on the right side of the light-emitting chip 4. Furthermore, because the light-emitting chip 4 is soldered to the first gold-tin layer 33a on the gold layer 32, the uneven force applied to the gold layer 32 also causes uneven tensile force on the light-emitting chip 4, causing the tensile force on the left side of the light-emitting chip 4 to be greater than the tensile force on the right side of the light-emitting chip 4, thereby increasing the risk of damage to the light-emitting chip 4.

[0102] On the other hand, due to the wide width of the laser, it is easy for the area of ​​the gold layer 32 that is not connected to the electrical probe 7 to not fully contact the heat dissipation base plate, especially the gold layer 32 on the right side of the light-emitting chip 4 is difficult to fully contact the heat dissipation base plate, thereby affecting the heat dissipation effect of the laser and causing the laser to be easily damaged.

[0103] Since in the laser provided by the embodiment of the present application, the projections of the light-emitting chip 4 and the protective device 5 along the length direction Y of the heat sink 3 at least partially overlap, the width of the area occupied by the gold-tin layer 33 is relatively narrow, thereby reducing the difference in tension on both sides of the light-emitting chip 4.

[0104] In some examples, as shown in FIG. 11 and FIG. 12 , the widths of the gold layer 32 on both sides of the gold-tin layer 33 are equal.

[0105] In this way, when the laser is subjected to an aging test, on the one hand, the distribution of the electrical probe 7 on the gold layer 32 on the left and right sides of the light-emitting chip 4 can be made more even, so that the force on the gold layer 32 can be made more even, and the tension on the left and right sides of the light-emitting chip 4 can be made more even, making the light-emitting chip 4 less likely to be damaged.

[0106] On the other hand, since the width of the AuSn layer 33 is relatively small, that is, the width of the heat sink 3 is relatively small, the heat sink 3 can fully contact the heat dissipation base plate, which is beneficial to the heat dissipation of the laser.

[0107] In some examples, the width of the gold layer 32 on both sides of the light emitting chip 4 may be 0.2 mm-0.4 mm.

[0108] For example, the width of the gold layer 32 on both sides of the gold-tin layer 33 may be 0.2 mm.

[0109] It should be noted that the width of the gold layer 32 cannot be too small. On the one hand, the width of the gold layer 32 on both sides of the gold-tin layer 33 must be at least larger than the width of the electrical probe 7 to ensure that the electrical probe 7 can connect with the gold layer 32.

[0110] On the other hand, if the width of the gold layer 32 is too small, the heat dissipation effect of the heat sink 3 will be affected, which is not conducive to the heat dissipation of the light emitting chip 4, thereby causing the light emitting chip 4 to be easily damaged.

[0111] In some examples, as shown in FIG. 12 , the lengths of the gold layers 32 on both sides of the light-emitting chip 4 may also be the same.

[0112] In some embodiments, as shown in Figure 3 , the laser includes multiple heat sinks 3, multiple light-emitting chips 4, and multiple protective devices 5, with the number of heat sinks 3, light-emitting chips 4, and protective devices 5 being equal. As shown in Figure 14 , the light-emitting chips 4 on the first heat sink are connected to the gold layer 32 of the second heat sink via gold wire 8, and the protective devices 5 on the first heat sink are connected to the gold layer 32 of the second heat sink via gold wire 8. The first and second heat sinks are adjacent heat sinks 3.

[0113] The heat sinks 3 are arranged in an array on the substrate 2 , and the width direction of the heat sinks 3 is consistent with the width direction of the substrate 2 . The heat sinks 3 in each row are arranged along the width direction of the substrate 2 , and the light-emitting chips 3 on each row of the heat sinks 3 are connected in series.

[0114] Since the laser has multiple evenly arranged light-emitting chips 4 (heat sinks 3), after the laser is prepared, it is necessary to electrically connect the adjacent light-emitting chips 4 (heat sinks 3) so that the adjacent light-emitting chips 4 are connected in series. The two adjacent light-emitting chips 4 need to be electrically connected through a gold wire 8, and the two ends of each gold wire 8 are welded to the heat sink 3, the light-emitting chip 4 or the protective device 5 through a solder joint 9. Since the current passing between the two adjacent light-emitting chips 4 is relatively large after the two adjacent light-emitting chips 4 are electrically connected, and the wire diameter of the gold wire 8 is small, the maximum current that the gold wire 8 can withstand is also relatively small. Therefore, in order to avoid the circuit being too large and the gold wire 8 being melted, three gold wires 8 are usually used to electrically connect the two adjacent light-emitting chips 4. In this way, the current passing through each gold wire 8 will be reduced, making the gold wire 8 less likely to be melted.

[0115] As shown in FIG13 , in the related art, the light-emitting chip 4 is electrically connected to the gold layer 32 on the adjacent heat sink 3 through three gold wires 8. Since the gold layer 32 and the first gold-tin layer 33a are both metal layers, the gold layer 32 and the first gold-tin layer 33a are conductive, so that the current flows through the light-emitting chip 4 and can pass through the first gold-tin layer 33a and the gold layer 32 in sequence, and then flow through the light-emitting chip 4 on the adjacent laser, thereby realizing the series connection between the two adjacent light-emitting chips 4.

[0116] To improve the antistatic capability of the light-emitting chip 4, the light-emitting chip 4 is typically connected in parallel with a protective device 5. In related art, the light-emitting chip 4 and the protective device 5 are electrically connected via a gold wire 8, and both the light-emitting chip 4 and the protective device 5 have corresponding solder joints 9. The surface of the light-emitting chip 4 has a metal layer. Therefore, when each gold wire 8 is energized, part of the current flows through the interior of the light-emitting chip 4, while the other part flows through the surface of the light-emitting chip 4 and the protective device 5, thereby achieving the parallel connection of the light-emitting chip 4 and the protective device 5. As can be seen from the above, the surface of the light-emitting chip 4 in related art has four solder joints 9. These solder joints 9 can also be called solder balls.

[0117] In the laser provided in the embodiment of the present application, since the arrangement of the light-emitting chip 4 and the protection device 5 is different from that in the related art, the electrical connection method is also adjusted accordingly.

[0118] As shown in Figures 14 and 15, the light-emitting chip 4 is electrically connected to the gold layer 32 on the adjacent heat sink 3 via three gold wires 8. Both the light-emitting chip 4 and the gold layer 32 have corresponding solder joints 9. Because the gold layer 32 is not easily damaged by soldering, the protective device 5 is electrically connected to the gold layer 32 on the adjacent laser via a gold wire 8. Both the protective device 5 and the gold layer 32 have corresponding solder joints 9.

[0119] It can be seen from this that the surface of the light emitting chip 4 in the laser provided in the embodiment of the present application has three solder joints, wherein the solder joints 9 on the light emitting chip 4 and the solder joints 9 on the gold layer 32 are evenly arranged.

[0120] The gold layer 32 and the gold-tin layer 33 are both conductive materials. Therefore, by electrically connecting the light-emitting chip 4 to the gold layer 32 on the adjacent laser via the gold wire 8, the light-emitting chip 4 can be electrically connected to the light-emitting chip 4 on the adjacent laser, thereby achieving a series connection between multiple light-emitting chips 4. When each gold wire 8 is energized, part of the current flows through the interior of the light-emitting chip 4, while the other part of the current no longer flows through the surface of the light-emitting chip 4 but directly passes through the protective device 5, thereby achieving a parallel connection between the light-emitting chip 4 and the protective device, thereby improving the anti-static ability of the light-emitting chip 4.

[0121] Compared with the related art, in the laser provided by the embodiment of the present application, there are fewer solder joints 9 on the surface of the light-emitting chip 4, thereby reducing the damage to the light-emitting chip 4 during the soldering process.

[0122] In addition, after the number of solder joints 9 on the surface of the light-emitting chip 4 is reduced, the three solder joints 9 can be moved as a whole toward the rear end of the light-emitting chip 4, so that the solder joints 9 are away from the front end of the light-emitting chip 4, that is, the solder joints 9 are away from the light-emitting point of the light-emitting chip 4, thereby reducing the risk of the solder joints 9 causing damage to the light-emitting point of the light-emitting chip 4.

[0123] It should be noted that, with respect to the technical solution of the related art shown in FIG. 16 , even if the gold wire 8 between the light-emitting chip 4 and the protective device 5 is also replaced with a gold wire 8 between the protective device 5 and the gold layer 32, since the light-emitting chip 4 and the protective device 5 are arranged side by side, the gold wire 8 will hinder the other three gold wires 8 from moving toward the rear end of the light-emitting chip 4, causing the light-emitting point of the light-emitting chip 4 to still be significantly affected by the solder joint 9. If only the solder joint 9 on the light-emitting chip 4 is moved toward the rear end of the light-emitting chip 4, the corresponding three gold wires 8 will tilt, and the gold wire 8 near the protective device 5 may cross and collide with the gold wire 8 between the protective device 5 and the gold layer 32. Therefore, in the related art, only moving the solder joint 9 on the light-emitting chip 4 toward the rear end of the light-emitting chip 4 is not feasible.

[0124] The assembly consisting of the heat sink 3, the light-emitting chip 4, and the protective device 5 can be referred to as a COS. As shown in Figure 17, after multiple COSs are connected in series, the two COSs at the two ends are electrically connected to the first electrical connector 10 and the second electrical connector 11, respectively. The first electrical connector 10 and the second electrical connector 11 are both electrically connected to the substrate 2. The substrate 2 has a drive circuit thereon. The drive circuit can send an electrical signal to the light-emitting chip 4 via the first electrical connector 10 or the second electrical connector 11, thereby driving the light-emitting chip 4 to emit laser light. The first electrical connector 10 and the second electrical connector 11 can be PIN pins.

[0125] Assuming that the driving circuit sends an electrical signal to the COS through the first electrical connector 10, a portion of the current conducted by the first electrical connector 10 flows through the light-emitting chip 4, another portion flows through the protective device 5, and then converges on the gold layer 32. The current on the gold layer 32 then enters the next COS, where a portion flows through the light-emitting chip 4, another portion flows through the protective device 5, and finally flows through the second electrical connector 11.

[0126] In some examples, the number of heat sinks 3 (COS) can be 16-36.

[0127] For example, the number of heat sinks 3 (COS) can be 20, and the multiple heat sinks 3 (COS) can be evenly distributed in four rows and five columns. The (COS) in each row are connected in series, and the COS at both ends of each row are electrically connected to the first electrical connector 10 and the second electrical connector 11 respectively.

[0128] In some examples, as shown in FIG3 , the laser further includes a cover plate 12 and a lens assembly 13 , wherein the frame 1 , the cover plate 12 , and the lens assembly 13 are arranged in sequence. The lens assembly 13 includes a plurality of lenses, and the number of lenses is the same as the number of light-emitting chips 4 , and the lenses are used to converge the laser light emitted by the light-emitting chips 4 .

[0129] In another embodiment of the present application, a laser is provided. Referring to FIG18 , FIG18 is a side view of a laser provided in an embodiment of the present application. The laser 000 may include: a substrate 100 , at least one heat sink 200 , and at least one light-emitting chip 300 .

[0130] At least one heat sink 200 in the laser 000 may be located on one side of the substrate 100 , and each heat sink 200 is fixedly connected to the substrate 100 .

[0131] At least one light-emitting chip 300 in the laser 000 may correspond one-to-one to at least one heat sink 200 , each light-emitting chip 300 may be located on a side of the corresponding heat sink 200 away from the substrate 100 , and each light-emitting chip 300 may be fixedly connected to the corresponding heat sink 200 .

[0132] It should be noted that the heat sink 200 in the laser 000 refers to a heat sink made of diamond, and the substrate 100 in the laser 000 refers to a base plate made of a composite material of diamond and copper.

[0133] It should also be noted that diamond has a high thermal conductivity and a high thermal conductivity. Here, the thermal conductivity of a material can be reflected by the thermal conductivity. The higher the thermal conductivity, the stronger the thermal conductivity of the material. The unit of thermal conductivity is watt / meter·K, which can also be written as W / (m·k). The thermal conductivity of diamond is as high as 2000W / (m·k). Therefore, the thermal conductivity of the heat sink made of diamond (i.e., the heat sink 200) is relatively high. In this way, during the operation of the laser 000, the heat generated by the light-emitting chip 300 can be quickly conducted through the heat sink 200 in a direction perpendicular to the substrate 100, and can be conducted to the substrate 100. In addition, the thermal conductivity of the composite material of diamond and copper is also relatively high. For this reason, the heat conducted to the substrate 100 can be quickly dissipated, and the substrate 100 can conduct the heat to the outside world for heat dissipation. In this way, when the laser 000 is working, the heat emitted by the light-emitting chip 300 in the laser 000 can be quickly dissipated, so that the operating temperature of the light-emitting chip 300 is lower, thereby making the light-emitting effect of the light-emitting chip 300 better, and it can also ensure that the light-emitting chip 300 is not easily damaged due to excessive temperature, thereby ensuring the high reliability of the laser 000.

[0134] In some embodiments, as shown in FIG18 , the laser 000 may further include: at least one reflective prism 400 located on one side of the substrate 100. Each reflective prism 400 in the laser 000 may be fixedly connected to the substrate 100, and at least one reflective prism 400 may correspond one-to-one to at least one light-emitting chip 300. The light-emitting surface of each light-emitting chip 300 may face the reflective surface S of the corresponding reflective prism 400.

[0135] The side of the reflective prism 400 facing the substrate 100 is the bottom surface D of the reflective prism 400 . The bottom surface D of the reflective prism 400 can be fixed on the substrate 100 , and the angle between the bottom surface D of the reflective prism 400 and the reflective surface 400 is acute.

[0136] In this case, please refer to Figure 19, which is a diagram of the optical path of laser light emitted by a light-emitting chip in a laser provided in an embodiment of the present application. The laser light emitted by the light-emitting chip 300 in the laser 000 can be directed toward the corresponding reflective surface S of the reflective prism 400 and can be reflected by the reflective surface S of the reflective prism 400. Here, the laser light reflected by the reflective surface S of the reflective prism 400 can be transmitted in a direction away from the substrate 100.

[0137] It should be noted that the cross-section of the reflective prism 400 perpendicular to the substrate 100 can be a right-angled trapezoid. In other words, the reflective prism 400 can be a prism with a right-angled trapezoidal cross-section. This not only facilitates the processing of the reflective prism 400, but also ensures that the reflective cold work prism 400 is fixed to the substrate 100 with minimal difficulty.

[0138] In the present application, since the reflective prism 400 in the laser 000 is directly fixed on the substrate 100, while the light-emitting chip 300 in the laser 000 needs to be fixed on the substrate 100 via the heat sink 200, and the laser light emitted by the light-emitting chip 300 in the laser 000 is usually in a divergent state. Therefore, the thickness h1 of the heat sink 200 in the laser 000 will affect the light extraction efficiency of the light-emitting chip 300. Here, in the direction of the optical axis of each light-emitting chip 300 in the laser 000, the distance d between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 will also affect the light extraction efficiency of the light-emitting chip 300. The following embodiments are all described as an example in which the distance d1 between the light-emitting chip 300 and the reflective surface S of the reflective prism 400 in the direction of the optical axis of each light-emitting chip 300 in the laser 000 is in the range of 0.3 mm to 0.5 mm.

[0139] In this case, if the thickness h1 of the heat sink 200 is too small, for example, the thickness h1 of the heat sink 200 is less than 0.2 mm. Then, please refer to Figure 20, which is a light path diagram of the laser emitted by the light-emitting chip when the thickness of the heat sink provided in an embodiment of the present application is relatively small. The laser emitted by the light-emitting chip 300 in the laser 000 will not be completely emitted toward the reflective surface S of the reflective prism 400. Among the laser light emitted by the light-emitting chip 300, a portion of the laser light will be directly emitted toward the substrate 100. This portion of the laser light cannot be reflected by the reflective surface S of the reflective prism 400, resulting in a portion of the laser light in the light-emitting chip 300 being unable to be normally emitted from the laser 000, thereby resulting in a low light extraction efficiency of the laser 000.

[0140] For this reason, the thickness h1 of the heat sink 200 in the embodiment of the present application cannot be too small. For example, the thickness h1 of the heat sink 200 needs to be greater than or equal to 0.2 mm. In this case, as shown in FIG21, FIG21 is a light path diagram of another light-emitting chip provided in the embodiment of the present application. When the thickness h1 of the heat sink 200 is greater than or equal to 0.2 mm, the laser light emitted by the light-emitting chip 300 in the laser 000 can all be directed toward the reflective surface S of the reflective prism 400, so that the reflective surface S of the reflective prism 400 can emit all the laser light emitted by the light-emitting chip 300, thereby enabling most of the laser light emitted by the light-emitting chip 300 to be emitted from the laser 000, and the light extraction efficiency of the laser 000 is relatively high.

[0141] In addition, if the thickness h1 of the heat sink 200 is large, the heat generated by the light emitting chip 300 needs to pass through a longer heat conduction path to be conducted to the substrate 100 during the operation of the laser 000, resulting in low efficiency in conducting the heat of the light emitting chip 300.

[0142] To this end, the thickness h1 of the heat sink 200 in the embodiment of the present application cannot be too large. For example, the thickness h1 of the heat sink 200 needs to be less than or equal to 0.4 mm. In this case, the heat sink 200 conducts the heat generated by the light-emitting chip 300 to the substrate 100 through a shorter heat conduction path, making the heat sink 200 more efficient in conducting heat from the light-emitting chip 300. This can further improve the heat dissipation efficiency of the light-emitting chip 300 through the cooperation between the heat sink 200 and the substrate 100.

[0143] Therefore, in the embodiment of the present application, the thickness h1 of the heat sink 200 ranges from 0.2 mm to 0.4 mm. The heat sink 200 within this thickness h1 range can not only allow all the lasers emitted by the light-emitting chip 300 to be directed toward the reflective surface S of the reflective prism 400, thereby increasing the light extraction efficiency of the laser 000, but also ensure that the heat sink 200 has a high efficiency in conducting heat to the light-emitting chip 300.

[0144] In summary, the laser provided in the embodiment of the present application includes: a substrate, at least one heat sink and at least one light-emitting chip. The heat sink has a high thermal conductivity. During the operation of the laser, the heat generated by the light-emitting chip can be quickly conducted to the substrate along the heat sink. In addition, the thermal conductivity of the composite material of diamond and copper is also high. Therefore, the heat conducted to the substrate can be quickly dissipated, and the substrate can conduct the heat to the outside for heat dissipation. In this way, when the laser is working, the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged by excessive temperature, thereby ensuring high reliability of the laser. In addition, the thickness of the heat sink ranges from 0.2 mm to 0.4 mm. A heat sink within this thickness range can not only allow all the laser light emitted by the light-emitting chip to be directed to the reflective surface of the reflective prism, thereby making the laser light extraction efficiency higher, but also ensure that the heat sink has a high efficiency in conducting heat from the light-emitting chip, which can further improve the heat dissipation efficiency of the light-emitting chip.

[0145] In the embodiment of the present application, since the laser beam emitted by the light-emitting chip 300 diverges in the shape of a light cone, as shown in FIG19 , the end of the light-emitting chip 300 facing the reflective prism 400 needs to protrude beyond the heat sink 200 to ensure that the laser beam emitted by the light-emitting chip 300 does not strike the heat sink 200, thereby improving the efficiency of the laser beam emitted by the light-emitting chip 300 in striking the reflective prism 400. Here, the length d2 of the protrusion of the light-emitting chip 300 relative to the heat sink 200 in the direction of the optical axis of the light-emitting chip 300 ranges from 5 microns to 10 microns. This ensures that the entire laser beam emitted by the light-emitting chip 300 is directed toward the reflective prism 400 and also maintains a larger contact area between the light-emitting chip 300 and the heat sink 200, thereby ensuring a high heat transfer efficiency from the heat sink 200 to the light-emitting chip 300.

[0146] In some embodiments, as shown in Figures 18 and 19 , since the substrate 100 in the laser 000 is made of a composite material of diamond and copper, and diamond is relatively hard, compared to a base plate made of oxygen-free copper, the substrate 100 is harder. As a result, the thickness h2 of the substrate 100 does not need to be excessively thick to provide good support for the light-emitting chip 300, effectively reducing the thermal path of the substrate 100.

[0147] For example, the thickness h2 of the substrate 100 in the laser 000 ranges from 1 mm to 4 mm. This allows the heat generated by the light-emitting chip 300 to be transferred from the heat sink 200 to the substrate 100. The substrate 100 then conducts this heat to the outside world via a shorter thermal path for dissipation. This further improves the heat dissipation efficiency of the light-emitting chip 300 through the cooperation of the heat sink 200 and the substrate 100.

[0148] In an embodiment of the present application, the light-emitting chip 300 in the laser 000 can be fixed to the heat sink 200 by solder. For example, as shown in Figure 22, Figure 22 is a schematic diagram of a light-emitting chip fixed to a heat sink provided in an embodiment of the present application. The laser 000 may also include: a solder layer 500 located on the side of the heat sink 200 facing away from the substrate 100, and the heat sink 200 can be fixedly connected to the corresponding light-emitting chip 300 through the solder layer 500. Here, the solder layer 500 can weld the light-emitting chip 300 after melting, so that the light-emitting chip 300 can be fixed to the heat sink 200.

[0149] It should be noted that each heat sink 200 in the laser 000 is provided with a solder layer 500 on the side facing away from the substrate 100 , so that each light-emitting chip 300 can be fixed on the corresponding heat sink 200 through the solder layer 500 on the corresponding heat sink 200 .

[0150] In some embodiments, the material of the solder layer 500 may be a gold-tin alloy, wherein the proportion of gold may be in the range of 75% to 80%.

[0151] In the present application, the light-emitting layer in the light-emitting chip 300 needs to be grown on a substrate. The material of the substrate in the light-emitting chip 300 is generally gallium arsenide (GaAs) or gallium nitride (GaN), and the substrate in the light-emitting chip 300 needs to be fixed to the substrate 100 via a solder layer 500. Due to the difference between the thermal expansion coefficient of the material of the substrate in the light-emitting chip 300 and the expansion coefficient of the solder layer 500, the light-emitting chip 300 and the solder layer 500 expand to different degrees when heated. During the operation of the laser 000, if the operating temperature of the light-emitting chip 300 is high, the heat generated by the light-emitting chip 300 will cause a large difference between the expansion deformation of the light-emitting chip 300 and the expansion deformation of the solder layer 500, resulting in a large thermal stress between the light-emitting chip 300 and the solder layer 500. The thickness of the solder layer 500 directly affects the operating temperature of the light-emitting chip 300, which in turn affects the thermal expansion degree of the light-emitting chip 300 and the solder layer 500, and ultimately affects the magnitude of the thermal stress generated between the light-emitting chip 300 and the solder layer 500. Therefore, by optimizing the thickness of the solder layer 500 , the thermal stress generated between the light emitting chip 300 and the solder layer 500 will not be too large.

[0152] For example, as shown in Figure 23, which is a schematic diagram of a heat generation simulation for a light-emitting chip according to an embodiment of the present application, it is assumed that the thickness of heat sink 200 is 0.28 mm; the length of light-emitting chip 300 is 1.5 mm, the width is 0.3 mm, and the thickness is 0.1 mm; the heat output of light-emitting chip 300 is 5 watts; and light-emitting chip 300 is positioned in the center of heat sink 200. Then, when the thickness of the solder layer 500 is 2 microns, the maximum operating temperature of the light-emitting chip 300 is 35.071°C, and the maximum thermal stress between the light-emitting chip 300 and the solder layer 500 is 6.285×107N / m2 (Newtons per square meter); when the thickness of the solder layer 500 is 4 microns, the maximum operating temperature of the light-emitting chip 300 is 35.448°C, and the maximum thermal stress between the light-emitting chip 300 and the solder layer 500 is 7.050×107N / m2; when the thickness of the solder layer 500 is 6 microns, the maximum operating temperature of the light-emitting chip 300 is 35.822°C, and the maximum thermal stress between the light-emitting chip 300 and the solder layer 500 is 8.021×107N / m2.

[0153] As can be seen, the solder layer 500 has a low thermal conductivity. As the thickness of the solder layer 500 increases, the heat generated by the light-emitting chip 300 is difficult to dissipate immediately, resulting in a higher overall operating temperature for the light-emitting chip 300 and, in turn, greater thermal stress between the light-emitting chip 300 and the solder layer 500. Furthermore, if the solder layer 500 is too thick, solder overflow may occur between the light-emitting chip 300 and the heat sink 200. The thinner the solder layer 500, the lower the overall operating temperature of the light-emitting chip 300 and the less thermal stress therebetween. However, if the solder layer 500 is too thin, the soldering strength between the light-emitting chip 300 and the solder layer 500 may be weakened, leading to voids within the solder layer 500 and, in turn, weakening the secure connection between the light-emitting chip 300 and the heat sink 200.

[0154] To this end, the solder layer 500 cannot be too thick, requiring a thickness of less than or equal to 5 microns; nor can it be too thin, requiring a thickness of greater than or equal to 2 microns. In other words, the thickness of the solder layer 500 ranges from 2 to 5 microns. This ensures that the light-emitting chip 300 is securely fixed to the heat sink 200 via the solder layer 500 and that the heat generated by the light-emitting chip 300 is immediately dissipated through the heat sink 200, thereby lowering the overall operating temperature of the light-emitting chip 300 and minimizing thermal stress between the light-emitting chip 300 and the solder layer 500.

[0155] It should be noted that FIG23 is an example of the heat generation mode of the light emitting chip, taking the light emitting chip as an example and centered on the heat sink. In actual products, the light emitting end of the light emitting chip needs to protrude from the heat sink.

[0156] In some embodiments, referring to FIG24 , which is a schematic diagram of a heat sink structure provided by an embodiment of the present application, the laser 000 may further include: a first metal layer 600 located between the solder layer 500 and the heat sink 200 , and a second metal layer 700 located between the heat sink 200 and the substrate 100 .

[0157] For example, the first metal layer 600 between the solder layer 500 and the heat sink 200 in the laser 000 may include a stacked titanium layer 601, a platinum layer 602, and a gold layer 603. The titanium layer 601 in the first metal layer 600 may be fixedly connected to the surface of the heat sink 200.

[0158] In this way, the gold layer 603 in the first metal layer 600 is the metal layer closest to the light-emitting chip 300 in the first metal layer 600, so that the gold layer 603 in the first metal layer 600 can serve as a conductive layer and be electrically connected to the electrode (which can be the positive electrode or the negative electrode) of the light-emitting chip 300. Here, since a solder layer 500 is also provided between the gold layer 603 in the first metal layer 600 and the light-emitting chip 300, and the material of the solder layer 500 is a gold-tin alloy. Therefore, the gold layer 603 in the first metal layer 600 can be connected to a power supply via a wire to achieve the purpose of supplying power to the light-emitting chip 300 through the gold layer 603 in the first metal layer 600 and the gold-tin alloy. Optionally, the gold layer 603 in the first metal layer 600 can also have strong corrosion resistance, thereby enabling the gold layer 603 in the first metal layer 600 to protect the light-emitting chip 300 and prevent the electrodes of the light-emitting chip 300 from being oxidized.

[0159] The platinum layer 602 and the titanium layer 601 in the first metal layer 600 can both serve as adhesive layers to fix the gold layer 603 in the first metal layer 600 on the heat sink 200 .

[0160] It should be noted that it is difficult to directly plate the gold layer 603 on the heat sink 200. Therefore, in this application, a titanium layer 601 and a platinum layer 602 are first plated in sequence on the side of the heat sink 200 facing away from the substrate 100, and then a gold layer 603 is plated on the platinum layer 602. This ensures that the gold layer 603 is firmly attached to the heat sink 200. In addition, the platinum layer 602 and the titanium layer 601 in the first metal layer 600 both have high thermal conductivity. Therefore, the heat generated by the light-emitting chip 300 can be effectively transferred to the heat sink 200 through the first metal layer 600.

[0161] In some embodiments, the thickness of the first metal layer 600 may be less than 1 micron to ensure that the heat generated by the light-emitting chip 300 can be quickly transferred to the heat sink 200 after being transferred to the first metal layer 600 .

[0162] The second metal layer 700 in the laser 000 may also include a stacked titanium layer 701, a platinum layer 702, and a gold layer 703. The titanium layer 701 in the second metal layer 700 may also be fixedly connected to the surface of the heat sink 200.

[0163] Here, each metal layer in the second metal layer 700 between the heat sink 200 and the substrate 100 in the laser 000 can be used as an adhesive layer to fix the heat sink 200 on the substrate 100 .

[0164] It should be noted that it is quite difficult to directly fix the heat sink 200 to the substrate 100. Therefore, in the present application, a second metal layer 700 is required on the side of the heat sink 200 close to the substrate 100, so that the heat sink 200 can be fixed to the substrate 100 through the second metal layer 700. Furthermore, since the gold layer 703 is relatively easy to fix to the substrate 100, but relatively difficult to fix to the heat sink 200, while the titanium layer 701 is relatively easy to fix to the heat sink 200, the platinum layer 702 can serve as a transition layer between the gold layer 703 and the titanium layer 701, which can better bond with the gold layer 703 and the titanium layer 701. Therefore, when the titanium layer 701, platinum layer 702, and gold layer 703 of the second metal layer 700 are respectively plated on the side of the heat sink 200 close to the substrate 100, not only can the difficulty of fixing the heat sink 200 to the substrate 100 be reduced, but the heat sink 200 can also be firmly set on the substrate 100.

[0165] In addition, the titanium layer 701, platinum layer 702 and gold layer 703 in the second metal layer 700 all have high thermal conductivity. Therefore, after the heat generated by the light-emitting chip 300 is conducted to the heat sink 200, the heat conducted to the heat sink 200 can be better conducted to the substrate 100 through the second metal layer 700.

[0166] In some embodiments, the thickness of the second metal layer 700 may be less than 1 micron to ensure that the heat conducted to the heat sink 200 can be quickly conducted to the substrate 10 by the second metal layer 700 after being conducted to the second metal layer 700 .

[0167] In the embodiment of the present application, the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may have the same thickness, the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may have the same thickness, and the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may have the same thickness. Of course, in other possible implementations, the titanium layer 601 in the first metal layer 600 and the titanium layer 701 in the second metal layer 700 may have different thicknesses, the platinum layer 602 in the first metal layer 600 and the platinum layer 702 in the second metal layer 700 may have different thicknesses, and the gold layer 603 in the first metal layer 600 and the gold layer 703 in the second metal layer 700 may have different thicknesses. This embodiment of the present application is not limited to this.

[0168] For example, the thickness range of the titanium layer in the first metal layer 600 and the second metal layer 700 can be 0.04 microns to 0.08 microns, the thickness range of the platinum layer in the first metal layer 600 and the second metal layer 700 can be 0.1 microns to 0.3 microns, and the thickness range of the gold layer in the first metal layer 600 and the second metal layer 700 can be 0.4 microns to 0.8 microns.

[0169] In the embodiment of the present application, the bottom surface D of the reflective prism 400 in the laser 000 may also be plated with a gold layer, and the reflective prism 400 may be fixed to the substrate 100 via this gold layer. Here, since the gold layer plated on the bottom surface of the reflective prism 400 has good thermal conductivity, even if the laser light emitted by the light-emitting chip 3000 irradiates the reflective prism 400, causing the temperature of the reflective prism 400 to rise, it can be ensured that the reflective prism 400 can quickly conduct the heat to the substrate 100 through the gold layer provided on the bottom surface D for heat dissipation. To this end, the reflective prism 400 can also be cooled through the substrate 100 to ensure that the reflective prism 400 does not undergo significant expansion and deformation due to excessive temperature, so that the laser light emitted by the light-emitting chip 300 can always be irradiated on the reflective surface S of the reflective prism 400, thereby ensuring a good light output effect of the laser 000.

[0170] In some embodiments, the above embodiments are all schematically illustrated using the example of a laser comprising a heat sink 200 and a light-emitting chip 300. When the laser 000 comprises multiple laser stone heat sinks 200 and multiple light-emitting chips 300, as shown in FIG25 , which is a top view of another laser provided in an embodiment of the present application, the multiple heat sinks 200 in the laser 000 can be arranged in an array in multiple rows and columns, and a corresponding light-emitting chip 300 is fixed on the side of each heat sink 200 facing away from the substrate 100. Here, the number of reflective prisms 400 in the laser 000 can also be multiple, and each reflective prism 400 can be fixed on the side of the substrate 100 facing the heat sink 200. The multiple reflective prisms 400 can correspond one-to-one to the multiple light-emitting chips 300, and each reflective prism 400 can be located on the side facing the light-emitting surface of the corresponding light-emitting chip 300, so that the reflective surface of each reflective prism 400 can reflect the laser light emitted by the corresponding light-emitting chip 300.

[0171] In the embodiment of the present application, as shown in Figures 25 and 26, Figure 26 is a cross-sectional view of the laser shown in Figure 25 at the line AA'. The laser 000 may further include a frame 800 fixedly connected to one side of the substrate 100. Each heat sink 200, each reflective prism 400, and the frame 800 in the laser 000 may be fixed to the same side of the substrate 100, and each heat sink 200, each light-emitting chip 300, and each reflective prism 400 in the laser 000 may be located within the area enclosed by the frame 800.

[0172] Here, the structure formed by fixing the substrate 100 and the frame 800 in the laser 000 can be referred to as a tube shell. Optionally, the materials of the frame 800 and the substrate 100 can be the same or different. For example, when the frame 800 is also made of a composite material of diamond and copper, the substrate 100 and the frame 800 can be an integrally formed structure. Of course, the substrate 100 and the frame 800 can also be two independent structures, and the two can be fixed together by welding.

[0173] In some embodiments, as shown in FIG25 , the laser 000 may further include: a plurality of electrode pins 900 fixed to the frame 800. The electrode pins 900 may communicate with the inside and outside of the enclosed area of ​​the frame 800, and the electrode pins 900 may be electrically connected to the light-emitting chip 300 for transmitting current to the light-emitting chip 300. For example, the electrode pins 900 may be a metal columnar structure. The frame 800 may have a plurality of mounting holes corresponding to the plurality of electrode pins 900, each electrode pin 900 may be inserted into the corresponding mounting hole, and the electrode pins 900 may be fixed to the frame 800 by a sealing material, and the mounting holes may be filled and sealed to ensure the sealing of the accommodating space.

[0174] In the embodiment of the present application, as shown in FIG26 , the frame 800 in the laser 000 has a light opening K on a side facing away from the substrate 100. After the reflective surface S of each reflective prism 400 in the laser 000 reflects the laser light emitted by the corresponding light-emitting chip 300, the reflected laser light can be directed toward the light opening K of the frame 800, so that the laser light can be emitted from the laser 000 through the light opening K.

[0175] In some embodiments, referring to FIG. 27 , which is a cross-sectional schematic diagram of another laser provided in an embodiment of the present application, the laser 000 may further include: a light-transmitting sealing component 1100 located at the light opening K of the frame 800 , and a collimating lens 1200 located on a side of the light-transmitting sealing component 1100 facing away from the substrate 100 .

[0176] The light-transmitting sealing member 1100 can be fixed to the frame 800 to seal the accommodation space enclosed by the substrate 100 and the frame 800, thereby preventing external moisture and other substances from damaging the light-emitting chip 300. Under the action of current, the light-emitting chip 300 can emit laser light to the corresponding reflective prism 50. The reflective prism 50 can reflect the received laser light toward the light-transmitting sealing member 1100. The laser light passes through the light-transmitting sealing member 1100 and is emitted to the collimating lens 1200. The collimating lens 1200 can collimate the received laser light and then emit it.

[0177] In some embodiments, the material of the light-transmitting sealing member 1100 may be BK7 glass, sapphire, quartz, etc. The collimating lens 1200 may be a free-form surface lens, an aspheric lens, or a Fresnel lens.

[0178] It should be noted that there are many ways to connect the light-transmitting sealing component 1100 and the frame 800. The embodiments of the present application will be described using the following two cases as examples:

[0179] In the first case, as shown in FIG. 27 , the light-transmitting sealing component 1100 can be fixed to the frame 800 by using gold-tin solder or sealing glue.

[0180] In the second case, as shown in FIG28 , which is a cross-sectional schematic diagram of another laser provided by an embodiment of the present application, the light-transmitting sealing component 1100 can also be fixed to the frame 800 by parallel seam welding. The light-transmitting sealing component 1100 can include a light-transmitting sealing layer 1101 and a sealing frame 1102. The light-transmitting sealing layer 1101 is fixed to the sealing frame 1102. The sealing frame 1102 can be fixed to the frame 800 by parallel seam welding.

[0181] In summary, the laser provided in the embodiment of the present application includes: a substrate, at least one heat sink and at least one light-emitting chip. The heat sink has a high thermal conductivity. During the operation of the laser, the heat generated by the light-emitting chip can be quickly conducted to the substrate along the heat sink. In addition, the thermal conductivity of the composite material of diamond and copper is also high. Therefore, the heat conducted to the substrate can be quickly dissipated, and the substrate can conduct the heat to the outside for heat dissipation. In this way, when the laser is working, the heat emitted by the light-emitting chip in the laser can be quickly dissipated, so that the operating temperature of the light-emitting chip is low, thereby making the light-emitting effect of the light-emitting chip better, and it can also ensure that the light-emitting chip is not easily damaged by excessive temperature, thereby ensuring high reliability of the laser. In addition, the thickness of the heat sink ranges from 0.2 mm to 0.4 mm. A heat sink within this thickness range can not only allow all the laser light emitted by the light-emitting chip to be directed to the reflective surface of the reflective prism, thereby making the laser light extraction efficiency higher, but also ensure that the heat sink has a high efficiency in conducting heat from the light-emitting chip, which can further improve the heat dissipation efficiency of the light-emitting chip.

[0182] The previous article introduced and explained the laser in the laser module separately. The following article introduces and explains the laser module as a whole.

[0183] The cross-sectional structure of a laser module in related art is shown in Figure 29, comprising a light-emitting chip 41, a module base plate 43, a circuit layer 44, a solder layer 45, and a module base plate 42. X1 denotes the heat dissipation path for the light-emitting chip. As can be seen, because the circuit layer 44 and the solder layer 45 are typically made of materials with poor thermal conductivity, the heat from the chip cannot be effectively dissipated through the heat dissipation path.

[0184] In view of the above technical problems, in another embodiment of the present application, a laser module is provided, as shown in Figures 30 to 32 (Figure 30 is a 3D view of the laser module, Figure 31 is a top view of the laser module in the light emitting direction, and Figure 32 is a cross-sectional view of the laser module of the embodiment of Figure 31 cut along the dotted line L1). The laser module includes at least one laser 1 and a base plate 2, wherein:

[0185] The laser 1 includes a light-emitting chip 11, a substrate 12 and at least one pin 13. The light-emitting chip 11 is located on one side of the substrate 12. The pin 13 is located on at least one side of the laser 1 perpendicular to the plane of the substrate 12 and is electrically connected to the light-emitting chip 11.

[0186] In some embodiments, the bottom plate 2 and the substrate 12 are both metal substrates, and the light-emitting chip 11 is soldered to the substrate 12 .

[0187] In some embodiments, the light emitting chip 11 is a semiconductor light emitting chip including a light emitting element. The light emitting element receives an electrical signal from the outside through a pin 13 and emits laser light to the outside. The light emitting direction is away from the substrate 12 .

[0188] In some embodiments, as shown in FIG32 , the laser 1 further includes a packaging frame 10, which together with the substrate 12 constitutes a closed space for accommodating the light-emitting chip 11. Optionally, the packaging frames 10 may all be in the shape of a square ring. The orthographic projection of each packaging frame 10 on the substrate 12 may be rectangular or approximately rectangular. For example, the orthographic projection may be a rounded rectangle or a chamfered rectangle. A rounded rectangle is a shape obtained by changing the corners of a rectangle into rounded corners, and a chamfered rectangle is a shape obtained by changing the corners of a rectangle into chamfers.

[0189] One side of the base plate 2 includes a welding portion 21 and at least one groove 22 . At least a portion of the substrate 12 of a laser 1 is disposed in one groove 22 , and the pins 13 are welded to the welding portion 21 .

[0190] In some embodiments, the groove 22 matches the dimensions of the substrate 12. The length and width of the groove 22 may be slightly larger than the length and width of the substrate 12. Alternatively, after the substrate 12 is inserted into the groove 22, the outer wall of the substrate 12 may contact the inner wall of the groove 22. The depth of the groove 22 may be adjusted accordingly depending on the embodiment. In some embodiments, half of the thickness of the substrate 12 may be located outside the groove 22.

[0191] In some embodiments, after the substrate 12 is engaged with the groove 22, the pin 13 can be in direct contact with the welding portion 21 or through solder. Optionally, the welding between the pin 13 and the welding portion 21 is lead soldering or tin soldering. Any welding method not specifically mentioned in other embodiments of the present application can be referred to here and will not be repeated.

[0192] In some embodiments, a control circuit is provided within the base plate 2, and the soldering portion 21 is electrically connected to the control circuit within the base plate 2, thereby forming an electrical connection loop between the control circuit, the soldering portion, the pins, and the light-emitting chip. The embodiments of this application focus on the packaging structure of the laser and do not limit the structure of the internal control circuit.

[0193] The embodiment of the present application sets a groove, which enables the laser to be embedded in the base plate and welded to the base plate through the pins on both sides. It can achieve the fixation and electrical connection between the laser and the base plate on the basis of eliminating the solder between the laser and the base plate. At the same time, the heat dissipation path X1 of the light-emitting chip only includes the base plate 2 and the substrate 12, which can improve the heat dissipation effect of the laser and ensure the luminous efficiency of the laser. In addition, in the related art, the circuit routing of the light-emitting chip is usually set at the bottom of the laser, which plays the role of electrical connection while welding the bottom to the base plate. However, the circuit routing will further lead to poor heat dissipation effect. In the embodiment of the present application, the electrical connection loop is set on the side of the laser. A laser only needs to be welded at a few points on the base plate to be fixed, which simplifies the internal circuit structure and welding process of the laser while further improving the heat dissipation effect of the laser.

[0194] In some embodiments, the laser 1 does not include pins, and the light-emitting chip 11 is directly electrically connected to the base plate 2. In this case, referring to Figure 33, the packaging frame 10 is made of ceramic material, the base plate 2 is made of copper material, and the packaging frame 10 and the base plate 2 are sealed and welded to form a receiving cavity. The receiving cavity is used to accommodate the light-emitting chip 11 and the protective device 5, and the opening of the receiving cavity away from the base plate 2 is sealed by sapphire sealing glass. An integrated collimating lens group is provided on the side of the sapphire sealing glass away from the base plate 2. The internal wiring of the receiving cavity is connected to the gold wires of the light-emitting chip 11 and the protective device 5, and then connected to the conductive pattern area on the base plate 2.

[0195] It should be noted that in the embodiments shown in Figures 30 to 32 of this application, a laser module includes two lasers. However, in implementation, the number of lasers may be one or more, and the multiple lasers may be arranged sequentially along the first direction. Those skilled in the art can implement one or more laser embodiments based on the disclosure of the embodiments of this application without inventive effort, and all of these are within the scope of protection of this application. The same applies to the other drawings of this application and will not be repeated here.

[0196] The laser 1 in the embodiment of the present application can be a monochromatic laser or a multicolor laser. A monochromatic laser is a laser that can only emit laser light of one color, and a multicolor laser is a laser that can emit laser light of multiple colors. If the laser 1 is a monochromatic laser, different lasers 1 can be used to emit laser light of different colors, or they can all be used to emit laser light of the same color, which is not limited in the embodiment of the present application.

[0197] For example, as shown in Figure 31, the laser 1 may include a first laser and a second laser, the first laser may be the laser on the left side of Figure 31, and the second laser may be the laser on the right side of Figure 31. The first laser may include multiple light-emitting chips, and the second laser may also include multiple light-emitting chips. The multiple light-emitting chips in the first laser may all be used to emit red laser light, and the multiple light-emitting chips in the second laser may be partially used to emit blue laser light, and the other partially used to emit green laser light. For example, the laser 1 may also include a first laser, a second laser, and a third laser, and the first laser, the second laser, and the third laser are arranged in sequence along the first direction. The first laser, the second laser, and the third laser may all include multiple light-emitting chips. The multiple light-emitting chips in the first laser may all be used to emit red laser light, the multiple light-emitting chips in the second laser may all be used to emit blue laser light, and the multiple light-emitting chips in the third laser may all be used to emit green laser light.

[0198] In some embodiments, the slow axes of the laser light emitted by the multiple light-emitting chips 11 in each laser 1 can be parallel to the arrangement direction of the light-emitting chips 11. It should be noted that the transmission speed of laser light varies in different light vector directions. The light vector direction with faster transmission speed is the fast axis, and the light vector direction with slower transmission speed is the slow axis, with the fast axis perpendicular to the slow axis. The fast axis can be perpendicular to the surface of the light-emitting chip 11, and the slow axis parallel to the surface of the light-emitting chip 11. The divergence angle of the laser light on the fast axis is greater than the divergence angle on the slow axis, such as the divergence angle on the fast axis is substantially more than three times the divergence angle on the slow axis. The light-emitting chips 11 are arranged with the slow axis of the emitted laser light as the arrangement direction. Because the divergence angle of the laser light in this direction is smaller, the distance between the light-emitting chips 11 can be smaller while avoiding interference and overlap of the laser light emitted by adjacent light-emitting chips 11. The density of the arrangement of the light-emitting chips 11 can be higher, which is conducive to the miniaturization of the laser. Alternatively, the multiple light-emitting chips 11 in the laser can be arranged in an array, arranged in multiple rows and columns, which is not limited in this embodiment of the present application.

[0199] In some embodiments, each laser may be in the form of an elongated strip, and the orthographic projection of each laser on the substrate may be approximately rectangular. The width direction of the rectangle may be parallel to the first direction, and the length direction may be parallel to the second direction. Alternatively, the width direction of the rectangle may be parallel to the second direction, and the width direction may be parallel to the first direction.

[0200] It should be noted that in the embodiments shown in Figures 30 to 32 of the present application, one laser includes two light-emitting chips, but in implementation, each laser can include one or more light-emitting chips, and the multiple light-emitting chips can be arranged in sequence along the second direction. Those skilled in the art can implement the embodiment of each laser including one or more light-emitting chips based on the content disclosed in the embodiments of the present application without paying any creative work, and all are within the scope of protection of the present application. The same applies to the other drawings of the present application and will not be repeated here. In some embodiments, the substrate 12 is an oxygen-free copper substrate.

[0201] Oxygen-free copper substrates have a high thermal conductivity of up to 400W / mK, providing excellent heat dissipation and further assisting in heat dissipation from light-emitting chip modules. While theoretically pure copper is free of oxygen and any deoxidizer residue, it still contains trace amounts of oxygen and some impurities. In practice, oxygen content should be no greater than 0.003%, total impurity content no greater than 0.05%, and copper purity greater than 99.95% can be used for oxygen-free copper substrates.

[0202] In some embodiments, the oxygen-free copper substrate further includes a nickel plating layer or a gold plating layer, which can improve the structural strength of the welding points between the oxygen-free copper substrate and other components.

[0203] In some embodiments, as shown in FIG34 , the side of the substrate 12 away from the light-emitting chip 11 contacts the bottom of the groove 22 , which can increase the heat transfer area and further enhance the heat dissipation effect.

[0204] In some embodiments, as shown in FIG35 or FIG36 , while the side of the substrate 12 away from the light-emitting chip 11 contacts the bottom of the groove 22, the base plate 2 further includes a first interlocking portion 221 at the bottom of the groove 22. The side of the substrate 12 away from the light-emitting chip 11 includes a second interlocking portion 111, and the first interlocking portion 221 and the second interlocking portion 111 form an interlocking structure. In the embodiment shown in FIG35 , the first interlocking portion 221 is a raised portion, and the second interlocking portion 111 is a recessed portion. In the embodiment shown in FIG36 , the first interlocking portion 221 is a recessed portion, and the second interlocking portion 111 is a raised portion.

[0205] By providing the interlocking portion, the laser 1 and the base plate 2 can be more tightly and firmly combined, thereby ensuring the overall structural strength of the laser module.

[0206] In some embodiments, the shapes of the first interlocking portion 221 and the second interlocking portion 111 are not limited. In some embodiments, taking the base plate 1 shown in FIG37 as an example, the first interlocking portion 221 is shaped like an X, and the shape of the second interlocking portion 111 corresponds to the first interlocking portion 221 and is also shaped like an X. The dimensions of the first interlocking portion 221 and the second interlocking portion 111 match. After the first interlocking portion 221 and the second interlocking portion 111 form an interlocking structure, the outer wall / inner wall of the first interlocking portion 221 contacts the outer wall / inner wall of the second interlocking portion 111, and the top / bottom of the first interlocking portion 221 contacts the top / bottom of the second interlocking portion 111.

[0207] In some embodiments, as shown in FIG. 38 , the groove 22 penetrates the bottom plate 2 .

[0208] During implementation, the entire laser module is placed on a heat sink, as shown in Figure 39, with the side of the base plate 2 facing away from the laser 1 in contact with the external heat sink. Providing a through-groove 22 simplifies the manufacturing process of the base plate 2 while also improving the heat dissipation of the laser through the external heat sink.

[0209] In some embodiments, when the groove 22 passes through the bottom plate 2 , in order to ensure the heat dissipation effect of the laser 1 , the thickness of the bottom plate 2 is relatively small.

[0210] In some embodiments, as shown in FIG40 , the substrate 12 contacts the heat sink 3 through a groove 22 passing through the bottom plate 2 , and the heat dissipation path X1 of the light-emitting chip 11 only includes the substrate 12 and the heat sink 3 , further improving the heat dissipation effect of the laser.

[0211] In some embodiments, the packaging frame of the laser 1 is shown in Figures 41 and 42, including a frame 14, which is connected to the substrate 12 and is located on the same side of the substrate 12 and the light-emitting chip 11. The frame 14 is arranged around the four sides of the light-emitting chip 11 perpendicular to the plane of the substrate 12.

[0212] The frame 14 includes a metal conductive layer 141 , and the light emitting chip 11 and the pins 13 are electrically connected to the metal conductive layer 141 .

[0213] In related technologies, the circuit routing of the light-emitting chip 11 is usually set at the bottom of the laser, that is, in the substrate 12, which plays the role of electrical connection while welding the bottom to the base plate. However, the circuit routing will further lead to poor heat dissipation effect. In the embodiment of the present application, the electrical connection path is set on the side of the laser, which has a simple structure. While simplifying the internal circuit structure of the laser, it further improves the heat dissipation effect of the laser.

[0214] In some embodiments, as shown in FIG41 , the light-emitting chip 11 is electrically connected to the metal conductive layer 141 of the frame 14 via leads 15 within the laser, and the pins 13 are electrically connected to the metal conductive layer 141 of the frame 14 by welding, thereby establishing an electrical connection path between the light-emitting chip 11 and the pins 13. The frame 14 may include the metal conductive layer 141 only in a portion of the area or may include the metal conductive layer 141 in the entire area, which is not limited herein.

[0215] In some embodiments, the metal conductive layer 141 is a deposited tungsten paste layer.

[0216] In some embodiments, as shown in FIG41 , the packaging frame of the laser may further include a glass cover plate 16 and a collimating lens 17 . The glass cover plate 16 and the collimating lens 17 may be a sapphire cover plate and a sapphire lens. The divergence angle of the collimating lens 17 is less than 1° and the deviation angle is less than 0.8°, thereby achieving collimation of the light emitted by the light-emitting chip 11 .

[0217] In some embodiments, the frame 14 is welded to the substrate 12 and the glass cover 16 by gold-tin soldering to ensure the airtightness of the laser package.

[0218] The glass cover 16 is located on the side of the frame 14 away from the substrate 12 and is used to seal the opening on the side of the frame 14 away from the substrate 12, thereby forming a sealed cavity together with the substrate 12 and the frame 14. Optionally, the laser 1 may not include the glass cover 16, and the collimating lens 17 may be directly fixed to the surface of the frame 14 away from the substrate 12. In this way, the collimating lens 17, the frame 14, and the substrate 12 together form a sealed cavity.

[0219] The collimating lens 17 is located on the side of the glass cover 16 away from the substrate 12. In the embodiment of the present application, each collimating lens 17 can be integrally formed. For example, the collimating lens 17 is generally plate-shaped, with a flat surface on the side closest to the substrate 12 and one or more convex curved surfaces on the side away from the substrate 12. Each of the multiple convex curved surfaces is a collimating microlens, and the collimating microlenses correspond one-to-one with the multiple light-emitting chips 11.

[0220] In some embodiments, as shown in Figure 43, the packaging frame of the laser 1 also includes an integrated lens 18, the integrated lens 18 includes a lens portion 181 and a side wall portion 182, the integrated lens 18 is connected to the frame 14, the lens portion 181 is located on the side of the light-emitting chip 11 away from the substrate 12, and the side wall portion 182 is arranged around the four sides of the light-emitting chip 11 perpendicular to the plane of the substrate 12.

[0221] The integrated lens 18 , the substrate 12 and the frame 14 together form a sealed cavity for accommodating the light emitting chip 11 .

[0222] Compared with the embodiment shown in Figure 41, the integrated lens 18 in the above embodiment can reduce the packaging process while ensuring the airtightness of the laser package. The integrated lens 18 can be directly welded to the frame 14, which reduces the process difficulty and reduces the production cost.

[0223] In some embodiments, the lens portion 181 of the integrated lens 18 has a flat surface close to the substrate 12 and a surface away from the substrate 12 having one or more convex curved surfaces, wherein the portion where each of the multiple convex curved surfaces is located is a collimating microlens, and the collimating microlenses correspond one-to-one to the multiple light-emitting chips 11.

[0224] In some embodiments, the integrated lens 18 is integrally formed during manufacturing. Dividing it into the lens portion 181 and the sidewall portion 182 is only used to clearly describe the structure of the integrated lens 18 and does not mean that the integrated lens 18 is spliced ​​together from multiple parts.

[0225] In some embodiments, the integrated lens 18 is a sapphire integrated lens, and the divergence angle of the lens portion 181 is less than 1° and the deviation angle is less than 0.8°, thereby achieving collimation of the light emitted by the light-emitting chip 11 .

[0226] In some embodiments, the frame 14 and the integrated lens 18 are welded by gold-tin soldering to ensure the airtightness of the laser package.

[0227] In some embodiments, to prevent stray light from penetrating the sidewalls, the laser 11 further includes a light absorbing film for absorbing stray light, which is attached to the four inner sidewalls of the integrated lens 18. The light absorbing film is made of an opaque material, preferably an aluminum mold.

[0228] In some embodiments, the frame 14 comprises an alumina frame. Alumina has high strength and chemical stability, and its raw material source is abundant, making it suitable for manufacturing frames of various shapes. The surface connecting the alumina frame to the substrate 12 includes a metal coating, which is used to improve the weld strength and thermal conductivity of the alumina frame when welding to other components. In some embodiments, the surface connecting the alumina frame 14 to the glass cover 16 or the integrated lens 18 also includes a metal coating.

[0229] In some embodiments, the laser 1 is shown in Figures 44 and 45 (Figure 42 is a top view of the laser light emitting direction, and Figure 43 is a cross-sectional view of the laser of the embodiment of Figure 42 cut along the dotted line L2). Each laser 1 may also include a heat sink 191 and a reflective prism 192. The heat sink 191 and the reflective prism 192 may both correspond one-to-one to the multiple light-emitting chips 11 in the laser module. Each light-emitting chip 11 is located on a corresponding heat sink 191, and the heat sink 191 is used to assist the corresponding light-emitting chip 11 in heat dissipation. The material of the heat sink 191 may include ceramic. Each reflective prism 192 is located on the light-emitting side of the corresponding light-emitting chip 11. The light-emitting chip 11 can emit a laser to the corresponding reflective prism 192, and the reflective prism 192 can reflect the laser toward the packaging frame 10 in a direction away from the substrate 12 (such as the X2 direction). The packaging frame can include a glass cover 16 and a collimating lens 17 as shown in Figure 41, or can include an integrated lens 18 as shown in Figure 43. The reflecting prism 192 can reflect the laser toward the collimating lens 17 or the integrated lens 18 corresponding to the light-emitting chip 11 in a direction away from the substrate 12, and then the laser can be collimated by the lens and emitted.

[0230] In some embodiments, the laser module is shown in Figures 46 and 47 (Figure 46 is a top view of the laser light emitting direction, and Figure 47 is a cross-sectional view of the laser of the embodiment of Figure 46 cut along the dotted line L3). Each laser 1 includes the heat sink 191 and the reflecting prism 192 in the above-mentioned embodiment.

[0231] In some embodiments, as shown in Figures 48 and 49, the laser module includes at least two lasers 1, each laser 1 includes a positive pin 131 and a negative pin 132, the positive pin 131 is electrically connected to the positive pole of the light-emitting chip 11, and the negative pin 132 is electrically connected to the negative pole of the light-emitting chip 11.

[0232] The welding portion 21 includes a positive electrode welding portion 211 and a negative electrode welding portion 212 . The positive electrode pin 131 is welded to the positive electrode welding portion 211 , and the negative electrode pin 132 is welded to the negative electrode welding portion 212 .

[0233] In some embodiments, the positive electrode welding portion 211 corresponds one-to-one to the positive electrode pin 131. Similarly, the negative electrode welding portion 212 corresponds one-to-one to the negative electrode pin 132. A laser module includes N lasers 1, which includes N positive electrode welding portions 211 and N negative electrode welding portions 212. Moreover, as shown in Figures 48 and 49, the N positive electrode welding portions 211 are located on the same side, and the N negative electrode welding portions 212 are located on the other same side.

[0234] The base plate 2 also includes a control circuit, a common positive electrode 231 and a common negative electrode 231. The control circuit is located inside the base plate 2. The common positive electrode 231 and the common negative electrode 232 are located on the same side of the substrate 12 and the welding portion 21. The common positive electrode 231 is electrically connected to the control circuit and at least two positive electrode welding portions 211 inside the base plate 2 through a printed circuit. The common negative electrode 232 is electrically connected to the control circuit and at least two negative electrode welding portions 212 inside the base plate 2 through a printed circuit.

[0235] By setting a common positive electrode and a common negative electrode, an electrical connection loop is formed for the control circuit, common electrode, welding part, pin, and light-emitting chip, which simplifies the routing and electrical connection method of the laser module. The control circuit can control the emission of all lasers in the laser module by providing electrical signals to the common negative electrode and the common positive electrode.

[0236] In some embodiments, when the number of lasers in a laser module is small, such as two, or three to four as shown in the accompanying drawings, the base plate 2 only needs to include one common positive electrode 231 and one common negative electrode 231, and the common positive electrode 231 is connected to all positive electrode welding parts 211, and the common negative electrode 232 is connected to all negative electrode welding parts 212, as shown in Figure 49. If the number of lasers in a laser module is large, such as eight, the base plate 2 may include two common positive electrodes 231 and two common negative electrodes 231, each common positive electrode 231 is connected to four positive electrode welding parts 211, and each common negative electrode 232 is connected to four negative electrode welding parts 212. The same applies to embodiments with other numbers of lasers, which will not be described in detail.

[0237] The common positive electrode 231 and the common negative electrode 232 shown in Figures 48 and 49 are only exemplary. During implementation, the common positive electrode 231 and the common negative electrode 232 can be arranged inside the base plate 2, so that there are no obvious structural features outside the base plate 2, which is also within the protection scope of this application.

[0238] In some embodiments, the laser module may further include a plurality of power supply pins not shown in the accompanying drawings. The plurality of power supply pins are located on the base plate, and may be located at the bottom or side of the base plate. The power supply pins are connected to the control circuit inside the base plate and are used to connect to the external power supply, thereby realizing an electrical connection loop from the external power supply, the control circuit, the common electrode, the pins, to the light-emitting chip, thereby triggering each light-emitting chip to emit laser. The plurality of power supply pins may include a plurality of positive power supply pins and at least one negative power supply pin. The positive power supply pin is used to connect to the positive pole of the external power supply, and the negative power supply pin is used to connect to the negative pole of the external power supply.

[0239] In this application, the terms "at least one of A and B" and "A and / or B" are merely a description of the association relationship of associated objects, indicating that there can be three kinds of relationships, namely, A exists alone, A and B exist at the same time, and B exists alone. The term "at least one of A, B, and C" indicates that there can be seven kinds of relationships, which can represent seven situations: A exists alone, B exists alone, C exists alone, A and B exist at the same time, A and C exist at the same time, C and B exist at the same time, and A, B, and C exist at the same time. In the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. The term "at least one" refers to one or more, and the term "multiple" refers to two or more, unless otherwise expressly defined.

[0240] The words "include" and "including" mentioned throughout the specification and claims are open-ended terms and should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem and basically achieve the technical effect. Certain words are used in the specification and claims to refer to specific components. Those skilled in the art should understand that manufacturers may use different terms to refer to the same component. This specification and claims do not use differences in name as a way to distinguish components, but rather use differences in the functions of the components as the criterion for distinction.

[0241] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A laser module, characterized in that: The laser comprises a frame, a substrate, a heat sink, a light-emitting chip and a protective device; The frame and the heat sink are both fixed on the substrate, and the heat sink, the light emitting chip and the protection device are all located inside the frame; The light emitting chip and the protection device are both fixed on the heat sink, and the light emitting chip and the protection device are spaced apart in the length direction of the heat sink. In the length direction of the heat sink, the orthographic projection of the light emitting chip and the orthographic projection of the protection device partially overlap or are spaced apart.

2. The laser module according to claim 1, characterized in that: The heat sink comprises a gold-tin layer, a gold layer and a heat sink substrate arranged in sequence from top to bottom; The width of the gold-tin layer is smaller than the width of the gold layer, and the width of the gold layer is smaller than the width of the heat sink substrate; The light emitting chip and the protection device are both smaller than the width of the gold-tin layer, and the light emitting chip and the protection device are welded on the gold-tin layer.

3. The laser module according to claim 2, characterized in that: The gold-tin layer is an integrated gold-tin layer.

4. The laser module according to claim 3, characterized in that: The gold-tin layer is in a long strip shape and extends along the length direction of the heat sink; the light-emitting chip and the protection device are arranged in sequence along the length direction of the gold-tin layer; or, The gold-tin layer is L-shaped, and includes a first area and a second area. The first area is in a long strip shape and extends along the length direction of the heat sink, and the second area is located on one side of the first area; the light-emitting chip is located in the first area, a part of the protection device is located in the second area, and the other part is located in the first area.

5. The laser module according to claim 2, characterized in that: The gold-tin layer comprises a first gold-tin layer and a second gold-tin layer separated from each other, wherein the first gold-tin layer and the second gold-tin layer are spaced apart in the length direction of the heat sink, and projections of the first gold-tin layer and the second gold-tin layer in the length direction of the heat sink at least partially overlap; The light emitting chip is located in the first gold-tin layer, and the protection device is located in the second gold-tin layer.

6. The laser module according to claim 1, characterized in that: The projections of the light emitting chip and the protection device in the length direction of the heat sink overlap, the light emitting chip has a first axis in the length direction of the heat sink, the protection device has a second axis in the length direction of the heat sink, and the distance between the first axis and the second axis is no more than 0.35 mm.

7. The laser module according to claim 6, characterized in that: The projection of the light-emitting chip in the length direction of the heat sink at least partially falls on the projection of the protection device in the length direction of the heat sink; or, The projection of the protection device in the length direction of the heat sink at least partially falls on the projection of the light emitting chip in the length direction of the heat sink.

8. The laser module according to claim 1, characterized in that: The substrate is a diamond copper structure, the heat sink is a diamond structure, and the thickness of the heat sink ranges from 0.2 mm to 0.4 mm.

9. The laser module according to claim 8, characterized in that: The laser further comprises: a reflective prism located on one side of the diamond copper, each of the reflective prisms is fixedly connected to the substrate, and the reflective prisms correspond to the light-emitting chips one by one, and the light-emitting surface of each light-emitting chip faces the reflective surface of the corresponding reflective prism; In the direction of the optical axis of each light-emitting chip, the distance between the light-emitting chip and the reflective surface of the reflective prism ranges from 0.3 mm to 0.5 mm; The end of the light emitting chip facing the reflective prism protrudes from the heat sink, and in the optical axis direction of the light emitting chip, the length of the light emitting chip protruding relative to the heat sink ranges from 5 microns to 10 microns.

10. The laser module according to claim 8, characterized in that: The laser further comprises: a solder layer located on a side of the heat sink facing away from the substrate, and the heat sink is fixedly connected to the corresponding light-emitting chip through the solder layer.

11. The laser module according to claim 10, characterized in that: The laser further includes: a first metal layer located between the solder layer and the heat sink, and a second metal layer located between the heat sink and the substrate.

12. The laser module according to claim 11, characterized in that: The first metal layer and the second metal layer both include: a titanium layer, a platinum layer and a gold layer which are stacked, and the titanium layer in the first metal layer and the second metal layer is fixedly connected to the surface of the heat sink; The thickness of the titanium layer ranges from 0.04 micrometers to 0.08 micrometers, the thickness of the platinum layer ranges from 0.1 micrometers to 0.3 micrometers, and the thickness of the gold layer ranges from 0.4 micrometers to 0.8 micrometers.

13. The laser module according to claim 1, characterized in that: Also includes a base plate; The laser further includes a pin, the light-emitting chip is located on one side of the substrate, the pin is located on at least one side of the laser perpendicular to the plane of the substrate and is electrically connected to the light-emitting chip; one side of the base plate includes a welding portion and at least one groove, at least part of the substrate of one of the lasers is located in one of the grooves, and the pin is welded to the welding portion; or, The light emitting chip is directly electrically connected to the base plate.

14. The laser module according to claim 13, wherein: A side of the substrate away from the light emitting chip contacts the bottom of the groove.

15. The laser module according to claim 14, wherein: The base plate also includes a first embedding portion at the bottom of the groove, and the base plate includes a second embedding portion on a side away from the light-emitting chip, and the first embedding portion and the second embedding portion form an embedding structure, wherein the first embedding portion is one of the protruding portion or the recessed portion, and the second embedding portion is the other of the protruding portion or the recessed portion.

16. The laser module according to claim 13, wherein: The groove passes through the bottom plate.

17. The laser module according to claim 13, wherein: The laser further comprises an integrated lens, the integrated lens comprising a lens portion and a side wall portion, the integrated lens is connected to the frame, the lens portion is located on a side of the light emitting chip away from the substrate, and the side wall portion is arranged around four side surfaces of the light emitting chip perpendicular to the plane of the substrate; The integrated lens, the substrate and the frame together form a sealed cavity for accommodating the light-emitting chip.

18. The laser module according to claim 13, wherein: Each of the lasers comprises a positive pin and a negative pin, wherein the positive pin is electrically connected to the positive electrode of the light-emitting chip, and the negative pin is electrically connected to the negative electrode of the light-emitting chip; The welding part includes a positive electrode welding part and a negative electrode welding part, the positive electrode pin is welded to the positive electrode welding part, and the negative electrode pin is welded to the negative electrode welding part; The base plate also includes a control circuit, a common positive electrode and a common negative electrode. The control circuit is located inside the base plate. The common positive electrode and the common negative electrode are located on the same side of the substrate and the welding part. The common positive electrode is electrically connected to the control circuit and the positive electrode welding part, and the common negative electrode is electrically connected to the control circuit and the negative electrode welding part.

19. A laser module, characterized in that: The laser comprises a frame, a substrate, a heat sink, a light-emitting chip and a protective device; The substrate is a diamond copper structure, the heat sink is a diamond structure, and the thickness of the heat sink ranges from 0.2 mm to 0.4 mm; The frame and the heat sink are both fixed on the substrate, and the heat sink, the light emitting chip and the protection device are all located inside the frame; The light emitting chip and the protection device are both fixed on the heat sink.

20. The laser module according to claim 19, characterized in that: The laser further comprises: a reflective prism located on one side of the diamond copper, each of the reflective prisms is fixedly connected to the substrate, and the reflective prisms correspond to the light-emitting chips one by one, and the light-emitting surface of each light-emitting chip faces the reflective surface of the corresponding reflective prism; In the direction of the optical axis of each light-emitting chip, the distance between the light-emitting chip and the reflective surface of the reflective prism ranges from 0.3 mm to 0.5 mm; The end of the light emitting chip facing the reflective prism protrudes from the heat sink, and in the optical axis direction of the light emitting chip, the length of the light emitting chip protruding relative to the heat sink ranges from 5 microns to 10 microns.

21. The laser module according to claim 19, characterized in that: The laser further comprises: a solder layer located on a side of the heat sink facing away from the substrate, and the heat sink is fixedly connected to the corresponding light-emitting chip through the solder layer.

22. The laser module according to claim 21, characterized in that: The laser further includes: a first metal layer located between the solder layer and the heat sink, and a second metal layer located between the heat sink and the substrate.

23. The laser module according to claim 22, characterized in that: The first metal layer and the second metal layer both include: a titanium layer, a platinum layer and a gold layer which are stacked, and the titanium layer in the first metal layer and the second metal layer is fixedly connected to the surface of the heat sink; The thickness of the titanium layer ranges from 0.04 micrometers to 0.08 micrometers, the thickness of the platinum layer ranges from 0.1 micrometers to 0.3 micrometers, and the thickness of the gold layer ranges from 0.4 micrometers to 0.8 micrometers.

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