Electro-conductive contact pin

Abstract

The present invention provides an electro-conductive contact pin that prevents localized damage to a beam due to functional layers provided in slits. In addition, the present invention provides an electro-conductive contact pin that improves current-carrying capacity due to the functional layers provided in the slits.

Description

electrically conductive contact pins

[0001] The present invention relates to an electrically conductive contact pin.

[0002] Electrical characteristic testing of semiconductor devices is performed using a testing device equipped with a plurality of electrically conductive contact pins. Testing is performed by bringing a semiconductor device (such as a semiconductor wafer or semiconductor package) close to the testing device and contacting the electrically conductive contact pins with external terminals (such as solder balls or bumps) of the semiconductor device. Examples of the testing device include a probe card or a test socket, and the electrically conductive contact pins include, but are not limited to, probe pins or socket pins.

[0003] More specifically, the electrical characteristic test of a semiconductor device is performed by approaching the semiconductor device to a testing device having a plurality of electrically conductive contact pins formed on a circuit board and contacting each electrically conductive contact pin with a corresponding external terminal on the semiconductor device. When the electrically conductive contact pins and the external terminals are brought into contact, a process of additionally approaching the semiconductor device to the testing device is performed after the two reach a state where they begin to make contact. This process is called overdrive. Overdrive is a process of elastically deforming the electrically conductive contact pins, and by performing overdrive, all electrically conductive contact pins can reliably make contact with the external terminals even if there is a difference in the height of the external terminal or the height of the electrically conductive contact pins. In addition, during overdrive, the electrically conductive contact pins elastically deform and their tips move on the external terminals, thereby performing a scrubbing. This scrubbing removes the oxide film on the surface of the external terminals, which can reduce the contact resistance.

[0004] Fig. 1a is a plan view of an electrically conductive contact pin (1) according to the prior art, Fig. 1b is a cross-sectional view taken along line A-A' of Fig. 1a, Fig. 1c is a plan view of an electrically conductive contact pin (1) having a slit (32) formed according to the prior art, and Fig. 1d is a cross-sectional view taken along line A-A' of Fig. 1c.

[0005] The electrically conductive contact pin (1) illustrated in FIGS. 1A and 1B may be composed of a single material of metal. The electrically conductive contact pin (1) must be elastically deformed during the overdrive process. Therefore, the single material of metal constituting the electrically conductive contact pin (1) may be a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or alloys thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy, taking into account the degree of elastic deformation.

[0006] By shortening the length of the electrically conductive contact pin (1), the inductance can be reduced and the high-frequency characteristics of the test signal can be improved. However, if the length of the electrically conductive contact pin (1) is shortened while attempting to secure a sufficient amount of overdrive, there is a problem that the electrically conductive contact pin (1) may be plastically deformed or the external terminal may be damaged during overdrive. It is possible to consider suppressing the stress during overdrive by reducing the width of the electrically conductive contact pin (1). When the electrically conductive contact pin (1) is bent in the width direction, the maximum stress is generated on the outside of the curved portion. Since this stress is a value depending on the width of the electrically conductive contact pin (1), reducing the width of the electrically conductive contact pin (1) can reduce the stress during overdrive. In other words, even if the length of the electrically conductive contact pin (1) is shortened, the desired amount of overdrive can be secured if the width is reduced accordingly. However, reducing the width of the electrically conductive contact pin also reduces its cross-sectional area, which leads to reduced pin pressure during overdrive and deterioration of the allowable time current characteristics. To address this issue, it is necessary to increase the thickness of the electrically conductive contact pin to secure the cross-sectional area. However, in the case of electrically conductive contact pins manufactured using conventional photoresist molds, there is a limit to how thick they can be.

[0007] In order to solve the above problem, it is desirable to form a slit in the body region (13) of the electrically conductive contact pin (1) as shown in FIGS. 1c and 1d. This reduces the stress generated during bending, thereby ensuring a desired amount of overdrive. However, the electrically conductive contact pin (1) illustrated in FIGS. 1c and 1d has a problem in that the slit (32) formed in the body region (13) causes local destruction of the beam and cannot improve the current carrying capacity.

[0008] [Prior Art Literature]

[0009] [Patent Document]

[0010] (Patent Document 1) Patent Publication No. 10-2164373

[0011] The present invention has been derived to solve the problems of the above-described prior art, and its purpose is to provide an electrically conductive contact pin that prevents local destruction of a beam by providing a functional layer inside a slit.

[0012] In addition, the present invention aims to provide an electrically conductive contact pin having a functional layer inside a slit to improve current carrying capacity.

[0013] In order to achieve the above-described purpose, an electrically conductive contact pin according to the present invention includes a first end region, a second end region, and a body region positioned between the first and second end regions, wherein the body region includes at least two of the beam portions, and the adjacent beam portions are spaced apart from each other by a slit, and includes a functional layer provided inside the slit.

[0014] Additionally, the functional layer has an electrical conductivity greater than that of the beam portion.

[0015] Additionally, the functional layer has an elastic modulus smaller than the elastic modulus of the beam portion.

[0016] In addition, the beam portion is formed by laminating a plurality of different metal layers, and the functional layer is formed by a single metal layer.

[0017] In addition, the beam portion includes a first metal layer and a second metal layer, and the first metal layer is formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph) or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy, and the second metal layer is formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof, and the functional layer is formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0018] Additionally, the functional layer is composed of a different material from the metal layer constituting the beam portion.

[0019] In addition, the functional layer has the same material as any one of the plurality of metal layers constituting the beam portion.

[0020] In addition, the functional layer is in contact with a plurality of metal layers provided in the height direction of the beam portion at the joint surface with the beam portion.

[0021] Additionally, the functional layer is provided entirely in the slit.

[0022] Additionally, the functional layer is partially provided among the plurality of slits.

[0023] Additionally, the functional layer is partially provided in the longitudinal direction of the slit.

[0024] Additionally, the functional layer is partially provided in the thickness direction of the slit.

[0025] Additionally, the beam portion is elastically deformed by a pressure applied to the electrically conductive contact pin.

[0026] Additionally, the beam portion and the functional layer are arranged alternately.

[0027] Additionally, the beam portion and the functional layer are arranged parallel to each other.

[0028] Additionally, the body region includes a spring portion having a curved portion, wherein the slit is provided in the curved portion.

[0029] The present invention provides an electrically conductive contact pin having a functional layer inside a slit to prevent local destruction of a beam.

[0030] In addition, the present invention provides an electrically conductive contact pin having a functional layer inside a slit to improve current carrying capacity.

[0031] Fig. 1a is a plan view of an electrically conductive contact pin according to the prior art, and Fig. 1b is a cross-sectional view taken along line A-A' of Fig. 1a.

[0032] Fig. 1c is a plan view of an electrically conductive contact pin according to the prior art, and Fig. 1d is a cross-sectional view taken along line A-A' of Fig. 1c.

[0033] Fig. 2a is a plan view of an electrically conductive contact pin according to a preferred first embodiment of the present invention, and Fig. 2b is a cross-sectional view taken along line A-A' of Fig. 2a.

[0034] Fig. 3a is a plan view of an electrically conductive contact pin according to a preferred first embodiment of the present invention, and Fig. 3b is a cross-sectional view taken along line A-A' of Fig. 3a.

[0035] FIG. 4a is a plan view illustrating a method for manufacturing an electrically conductive contact pin according to a preferred first embodiment of the present invention, showing a state in which a first internal space is formed in a mold, and FIG. 4b is a cross-sectional view taken along line A-A' of FIG. 4a.

[0036] FIG. 5a is a plan view illustrating a method for manufacturing an electrically conductive contact pin according to a preferred first embodiment of the present invention, showing a state in which multilayer plating is performed on a first internal space, and FIG. 5b is a cross-sectional view taken along line A-A' of FIG. 5a.

[0037] FIG. 6a is a plan view illustrating a method for manufacturing an electrically conductive contact pin according to a preferred first embodiment of the present invention, showing a state in which a part of a mold is removed to form a second internal space, and FIG. 6b is a cross-sectional view taken along line A-A' of FIG. 6a.

[0038] FIG. 7a is a plan view illustrating a method for manufacturing an electrically conductive contact pin according to a preferred first embodiment of the present invention, showing a state in which a functional layer is formed in a second internal space, and FIG. 7b is a cross-sectional view taken along line A-A' of FIG. 7a.

[0039] FIG. 8 is a side view of an electrically conductive contact pin according to a preferred first embodiment of the present invention.

[0040] FIG. 9a is a plan view showing a plurality of slits in an electrically conductive contact pin according to a preferred first embodiment of the present invention, in which a functional layer is partially provided, and FIG. 9b is a cross-sectional view taken along line A-A' of FIG. 9a.

[0041] FIG. 9c is a plan view showing a plurality of slits in an electrically conductive contact pin according to a preferred first embodiment of the present invention, in which a functional layer is partially provided, and FIG. 9d is a cross-sectional view taken along line A-A' of FIG. 9c.

[0042] FIG. 9e is a plan view showing a plurality of slits in an electrically conductive contact pin according to a preferred first embodiment of the present invention, in which a functional layer is partially provided, and FIG. 9f is a cross-sectional view taken along line A-A' of FIG. 9e.

[0043] FIG. 9g is a plan view showing a plurality of slits in an electrically conductive contact pin according to a preferred first embodiment of the present invention, wherein a functional layer is partially provided, and FIG. 9h is a cross-sectional view taken along line A-A' of FIG. 9g.

[0044] FIGS. 10A to 10E are plan views showing a functional layer partially provided in the longitudinal direction of a slit in an electrically conductive contact pin according to a preferred first embodiment of the present invention.

[0045] FIG. 11a is a plan view showing a functional layer partially provided in the thickness direction of a slit in an electrically conductive contact pin according to a preferred first embodiment of the present invention, and FIG. 11b is a cross-sectional view taken along line A-A' of FIG. 11a.

[0046] FIG. 12a is a plan view showing a functional layer partially provided in the thickness direction of a slit in an electrically conductive contact pin according to a preferred first embodiment of the present invention, and FIG. 12b is a cross-sectional view taken along line A-A' of FIG. 12a.

[0047] FIG. 13a is a plan view of an electrically conductive contact pin before a functional layer is provided in a slit in the electrically conductive contact pin according to a preferred second embodiment of the present invention, and FIG. 13b is a cross-sectional view taken along line A-A' of FIG. 13a.

[0048] Fig. 14a is a plan view of an electrically conductive contact pin according to a second preferred embodiment of the present invention, and Fig. 14b is a cross-sectional view taken along line A-A' of Fig. 14a.

[0049] FIG. 15a is a plan view of an electrically conductive contact pin before a functional layer is provided in a slit in the electrically conductive contact pin according to a preferred third embodiment of the present invention, and FIG. 15b is a cross-sectional view taken along line A-A' of FIG. 15a.

[0050] Fig. 16a is a plan view of an electrically conductive contact pin according to a preferred third embodiment of the present invention, and Fig. 16b is a cross-sectional view taken along line A-A' of Fig. 16a.

[0051] The following merely exemplifies the principles of the invention. Therefore, those skilled in the art will be able to implement the principles of the invention and invent various devices within the scope and spirit of the invention, even if not explicitly described or illustrated herein. Furthermore, all conditional terms and embodiments listed herein are expressly intended, in principle, to facilitate understanding of the invention's concepts and should be understood as being solely intended to facilitate understanding and are not intended to be limited to the specifically enumerated embodiments and conditions.

[0052] The above-described purposes, features and advantages will become clearer through the following detailed description with reference to the attached drawings, so that a person having ordinary skill in the art to which the invention pertains can easily practice the technical idea of ​​the invention.

[0053] Embodiments described herein will be described with reference to cross-sectional and / or perspective views, which are ideal exemplary illustrations of the present invention. The thicknesses of membranes and regions depicted in these drawings are exaggerated for the purpose of effectively explaining the technical contents. The shapes of the exemplary drawings may be modified due to manufacturing techniques and / or tolerances. Furthermore, the number of molded articles depicted in the drawings is only a portion of the figures for illustrative purposes. Therefore, embodiments of the present invention are not limited to the specific shapes depicted, but also include variations in shapes resulting from the manufacturing process.

[0054] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0055] According to a preferred embodiment of the present invention, electrically conductive contact pins (100a to 100c) are provided in an inspection device and are used to transmit electrical signals by making electrical and physical contact with an inspection target. The inspection device may be an inspection device used in a semiconductor manufacturing process, such as a probe card or a test socket. In this case, the inspection target may be a semiconductor device in a semiconductor wafer state or a semiconductor package state.

[0056] The inspection device includes an electrically conductive contact pin (100a to 100c) and a guide housing having a through hole for accommodating the electrically conductive contact pin (100a to 100c).

[0057] The electrically conductive contact pins (100a to 100c) may be probe pins provided in a probe card, or may be socket pins provided in a test socket. The electrically conductive contact pin (100a) according to the first embodiment and the electrically conductive contact pin (100c) according to the second embodiment below may be probe pins, and the electrically conductive contact pin (100c) according to the third embodiment may be a socket pin. However, the application fields of the electrically conductive contact pins (100a to 100c) according to the preferred embodiment of the present invention are not limited thereto, and any pin for applying electricity to check for defects in an inspection target is included.

[0058] The width direction of the electrically conductive contact pins (100a to 100c) described below is the ±x direction indicated in the drawing, the length direction of the electrically conductive contact pins (100a to 100c) is the ±y direction indicated in the drawing, and the thickness direction of the electrically conductive contact pins (100a to 100c) is the ±z direction indicated in the drawing.

[0059] The electrically conductive contact pins (100a to 100c) have an overall length dimension in the longitudinal direction (±y direction), an overall thickness dimension in the thickness direction perpendicular to the longitudinal direction (±z direction), and an overall width dimension in the width direction perpendicular to the longitudinal direction (±x direction).

[0060] In describing various embodiments below, components that perform the same function will be given the same names and reference numbers for convenience, even if the embodiments differ. Furthermore, configurations and operations already described in other embodiments will be omitted for convenience.

[0061]

[0062] Electrically conductive contact pin (100a) according to the first embodiment

[0063] The electrically conductive contact pin (100a) according to the first embodiment may be a probe pin used in a probe card. More specifically, it may be a vertical probe pin inserted into a guide hole of a guide housing to inspect a semiconductor wafer.

[0064] Hereinafter, an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention will be described with reference to FIGS. 2a to 12b.

[0065] First, referring to FIGS. 2a and 2b, FIG. 2a is a plan view of an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention, and FIG. 2b is a cross-sectional view taken along line A-A' of FIG. 2a.

[0066] An electrically conductive contact pin (100a) includes a first end region (110a), a second end region (120a), and a body region (130a) positioned between the first and second end regions (110a, 120a). The first end region (110a) is a region connected to a connection pad of a circuit board, and the second end region (120a) is a region connected to an external terminal of a semiconductor wafer. The body region (130a) is a region that is deformed while having a different curvature in the width direction (±x direction) by a pressing force applied through both end regions.

[0067] The body region (130a) includes at least two beam portions (131a). The beam portions (131a) are elastically deformed by a pressing force applied to the electrically conductive contact pin (100a). The beam portions (131a) are separated from each other by a slit (132a). The beam portions (131a) positioned on both sides of the slit (132a) with the slit (132a) interposed therebetween are separated or spaced apart from each other.

[0068] The slit (132a) is formed long along the longitudinal direction (±y direction) of the body region (130a). In addition, a plurality of slits (132a) may be provided spaced apart from each other in the width direction (±x direction), and for example, there may be three slits (132a).

[0069] A functional layer (133a) is provided inside the slit (132a). The beam portion (131a) and the functional layer (133a) are alternately arranged along the width direction (±x direction). In addition, the beam portion (131a) and the functional layer (133a) are arranged parallel to each other.

[0070] Each slit (132a) has a length in the width direction (±x direction) and a length in the length direction (±y direction). Here, since the length in the length direction (±y direction) of the slit (132a) is formed longer than the length in the width direction (±x direction) of the slit (132a), the length in the width direction (±x direction) of the functional layer (133a) is shorter than the length in the length direction (±y direction) of the functional layer (133a).

[0071] The beam portion (131a) and the functional layer (133a) can each be formed of a single metal layer.

[0072] In this case, the beam portion (131a) is made of a metal having a larger elastic modulus than the functional layer (133a). For example, the beam portion (131a) may be formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy.

[0073] Additionally, the functional layer (133a) is composed of a metal having a higher electrical conductivity than the metal constituting the beam portion (131a). For example, the functional layer (133a) may be formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof. For example, the beam portion (131a) may be composed of a palladium-cobalt (PdCo) alloy, and the functional layer (133a) may be composed of copper (Cu).

[0074] Meanwhile, differently, referring to FIGS. 3a and 3b, the beam portion (131a) may be formed by stacking a plurality of different metal layers, and the functional layer (133a) may be formed by a single metal layer. The beam portion (131a) may be formed by stacking a plurality of metal layers in the thickness direction (±z direction). The plurality of metal layers include a first metal layer (101) and a second metal layer (102).

[0075] The first metal layer (101) is formed of a metal having relatively high wear resistance or elastic modulus compared to the second metal layer (102), and is preferably formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy. The second metal layer (102) is formed of a metal having relatively high electrical conductivity compared to the first metal layer (101), and is preferably formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0076] The first metal layer (101) constituting the beam portion (131a) is provided on the lower and upper surfaces in the thickness direction (±z direction) of the electrically conductive contact pin (100a), and the second metal layer (102) is provided between the first metal layer (101). For example, the beam portion (131a) is provided by alternately stacking the first metal layer (101), the second metal layer (102), and the first metal layer (101) in that order, and the number of stacked layers may be three or more.

[0077] The functional layer (133a) may be formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0078] The second metal layer (102) and the functional layer (133a) constituting the beam portion (131a) may be formed of the same metal material. For example, the second metal layer (102) and the functional layer (133a) may be formed of the same metal selected from among copper (Cu), silver (Ag), and gold (Au). For example, the beam portion (131a) may be formed by laminating palladium-cobalt (PdCo) alloy-copper (Cu)-palladium-cobalt (PdCo) alloy-copper (Cu)-palladium-cobalt (PdCo) alloy in that order, and the functional layer (133a) may be formed of copper (Cu).

[0079] Alternatively, the second metal layer (102) and the functional layer (133a) constituting the beam portion (131a) may be made of different metal materials. For example, when the second metal layer (102) is made of one metal selected from among copper (Cu), silver (Ag), and gold (Au), the functional layer (133a) may be made of a different material from the second metal layer (102) and another metal selected from among copper (Cu), silver (Ag), and gold (Au). For example, the beam portion (131a) may be formed by laminating palladium-cobalt (PdCo) alloy-copper (Cu)-palladium-cobalt (PdCo) alloy-copper (Cu)-palladium-cobalt (PdCo) alloy in that order, and the functional layer (133a) may be formed of gold (Au).

[0080] The first end region (110a) and / or the second end region (120a) may be formed by laminating a plurality of metal layers, including a first metal layer (101) and a second metal layer (102), taking into account the current carrying capacity (CCC). In this case, the first end region (110a) and / or the second end region (120a) may be formed by integrally extending the first metal layer (101) and the second metal layer (102) constituting the beam portion (131a).

[0081] Alternatively, the first end region (110a) and / or the second end region (120a) may be formed of a metal of a different material from the beam portion (131a) in consideration of wear resistance. For example, the first end region (110a) and / or the second end region (120a) may be formed of a single material selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph) or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy.

[0082] The functional layer (133a) has an electrical conductivity greater than that of the beam portion (131a). Regardless of whether the beam portion (131a) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133a) has an electrical conductivity greater than that of the beam portion (131a). Here, when the beam portion (131a) is composed of a plurality of metal layers, the electrical conductivity of the beam portion (131a) means an average electrical conductivity of the plurality of metal layers.

[0083] The functional layer (133a) has an elastic modulus smaller than that of the beam portion (131a). Regardless of whether the beam portion (131a) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133a) has an electrical conductivity smaller than the elastic modulus of the beam portion (131a). Here, when the beam portion (131a) is composed of a plurality of metal layers, the elastic modulus of the beam portion (131a) means an average elastic modulus of the plurality of metal layers.

[0084] The functional layer (133a) is in contact with a plurality of metal layers provided in the thickness direction (±z direction) of the beam portion (131a) at the joint surface with the beam portion (131a). The beam portion (131a) is configured by alternately stacking a first metal layer (101) and a second metal layer (102). Through this, the second metal layers (102) of the beam portion (131a) having high electrical conductivity are connected to the functional layer (133a) having high electrical conductivity. In a structure without the functional layer (133a), the second metal layers (102) constituting the beam portion (131a) are disconnected in the thickness direction (±z direction) by the first metal layer (101) having relatively low electrical conductivity. However, according to an embodiment of the present invention, the second metal layers (102) constituting the beam portion (131a) are connected to each other by the functional layer (133a), so that the second metal layers (102) are in a structure in which they are conductive to each other. This allows the current carrying capacity (CCC) of the electrically conductive contact pin (100a) to be improved.

[0085] Meanwhile, if the interior of the slit (132a) is left empty, stress may be concentrated due to a sudden change in cross-sectional area at both ends of the slit (132a) in the longitudinal direction (±y direction), which may result in local destruction of the beam portion (131a). However, according to an embodiment of the present invention, by providing a functional layer (133a) at the interior of the slit (132a), a sudden increase in stress at both ends of the slit (132a) is prevented, thereby preventing local destruction of the slit (132a).

[0086] Meanwhile, if a functional layer (133a) is provided inside the slit (132a), the elastic modulus can increase compared to a structure in which the functional layer (133a) is not provided inside the slit (132a). However, by forming the beam portion (131a) not as a single metal layer, but as a multi-layer plating of the first and second metal layers (101, 102), the increase in the elastic modulus through material change can be suppressed, thereby preventing an increase in contact pressure.

[0087] As described above, the present invention lowers the elastic modulus by multi-plating the beam portion (131a) with the first and second metal layers (101, 102) to prevent the contact pressure from increasing, and provides a functional layer (133a) inside the slit (132a) to prevent local destruction of the slit (132a), and improves the current carrying capacity (CCC) by forming the functional layer (133a) with at least one metal among copper (Cu), silver (Ag), and gold (Au) having high electrical conductivity.

[0088] Next, a method for manufacturing an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention will be described with reference to FIGS. 4a to 7b.

[0089] First, a first internal space (1100) is formed in the mold (1000). Fig. 4a is a plan view showing a state in which the first internal space (1100) is formed in the mold (1000), and Fig. 4b is a cross-sectional view taken along line A-A' of Fig. 4a.

[0090] The mold (1000) may be composed of an anodic oxide film, photoresist, a silicon wafer, or a similar material. However, preferably, the mold (1000) may be composed of an anodic oxide film material. An anodic oxide film refers to a film formed by anodic oxidation of a base metal, and a pore refers to a hole formed in the process of forming an anodic oxide film by anodic oxidation of a metal. For example, if the base metal is aluminum (Al) or an aluminum alloy, an anodic oxide film made of aluminum oxide (Al2O3) is formed on the surface of the base metal when the base metal is anodic oxidation. However, the base metal is not limited thereto, and includes Ta, Nb, Ti, Zr, Hf, Zn, W, Sb, or alloys thereof. The anodic oxide film formed as described above is vertically divided into a barrier layer having no pores formed therein and a porous layer having pores formed therein. When the base metal is removed from a base metal on which an anodic oxide film having a barrier layer and a porous layer is formed on the surface, only an anodic oxide film made of aluminum oxide (Al2O3) remains. The anodic oxide film can be formed in a structure in which the barrier layer formed during anodic oxidation is removed and penetrates the upper and lower portions of the pores, or in which the barrier layer formed during anodic oxidation remains intact and seals the upper and lower portions of the pores.

[0091] The anodic oxide film has a coefficient of thermal expansion of 2 to 3 ppm / ℃. Therefore, when exposed to a high-temperature environment, it experiences minimal thermal deformation due to temperature. Therefore, even in a high-temperature environment, a precise electrically conductive contact pin (100a) can be manufactured without thermal deformation.

[0092] Previously, molds for manufacturing electrically conductive contact pins were fabricated using photoresist (PR) instead of an anodic oxide film. By repeatedly spraying and hardening a liquid photosensitive solution, the molds were fabricated, forming layers in 30 μm increments in the thickness direction (±z direction). Even after the electrically conductive contact pins were completed, joints formed at each layer transition, like bamboo, easily leading to deformation. Stacking the molds was also limited, and precise patterning was difficult. However, a preferred embodiment of the present invention can overcome these problems by using a mold (1000) made of an anodic oxide film. First, because the anodic oxide film, which is already in a solid state, is processed by an etching method, precise patterning is possible. Furthermore, due to the solid nature of the anodic oxide film, the mold (1000) can be formed without layers in 100 μm increments in the thickness direction (±z direction). As a result, unlike conventional methods, the completed electrically conductive contact pins (100a) had no joints in the thickness direction (±z direction) and thus did not deform even after use. The electrically conductive contact pin (100a) according to a preferred embodiment of the present invention is higher in terms of electrical conductivity than existing pins and can be used without signal loss even in a high-frequency band of 100 GHz (gigahertz) or higher.

[0093] In this way, since the electrically conductive contact pin (100a) according to a preferred embodiment of the present invention is manufactured using a mold (1000) made of an anodic oxide film instead of a photoresist mold, it can exhibit the effect of implementing precision and fine shapes that were limited in implementation using a photoresist mold. In addition, in the case of a conventional photoresist mold, an electrically conductive contact pin having a thickness of about 40 μm can be manufactured, but when a mold (1000) made of an anodic oxide film is used, an electrically conductive contact pin (100a) having a thickness of 100 μm or more and 200 μm or less can be manufactured.

[0094] A seed layer (1200) for electroplating is provided on the lower surface of the mold (1000). The seed layer (1200) may be provided on the lower surface of the mold (1000) before forming the first internal space (1100) in the mold (1000). Meanwhile, a support substrate (not shown) may be formed on the lower surface of the mold (1000) to improve the handling of the mold (1000). In addition, in this case, the seed layer (1200) may be formed on the upper surface of the support substrate, and the mold (1000) in which the first internal space (1100) is formed may be combined with the support substrate for use. The seed layer (1200) may be formed of, for example, a copper (Cu) material, and may be formed by a deposition method.

[0095] The first internal space (1100) can be formed by wet etching a mold (1000) made of an anodic oxide film material. To this end, a photoresist is provided on the upper surface of the mold (1000) and patterned, and then the anodic oxide film in the patterned and open area reacts with an etching solution to form the first internal space (1100).

[0096] Next, an electroplating process is performed on the first internal space (1100) of the mold (1000) to form a first end region (110a), a second end region (120a), and a beam portion (131a) of the body region (130a). Fig. 5a is a plan view showing a state in which multilayer plating is performed on the first internal space (1100), and Fig. 5b is a cross-sectional view taken along line A-A' of Fig. 5a.

[0097] An electroplating process is performed using a seed layer (1200) to form a metal layer in the first internal space (1100).

[0098] Since the metal layer is formed while growing in the thickness direction (±z direction) of the mold (1000), the shape of each cross-section in the thickness direction (±z direction) of the mold (1000) is the same, and a plurality of metal layers are laminated in the thickness direction (±z direction) of the mold (1000). The plurality of metal layers include a first metal layer (101) and a second metal layer (102). The first metal layer (101) is a metal having relatively high wear resistance compared to the second metal layer (102), and includes rhodium (Rd), platinum (Pt), iridium (Ir), palladium or an alloy thereof, a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphor (NiPh) alloy, a nickel-manganese (NiMn), nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy. The second metal layer (102) is a metal having relatively high electrical conductivity compared to the first metal layer (101), and includes copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0099] The first metal layer (101) is provided on the lower and upper surfaces in the thickness direction (±z direction) of the electrically conductive contact pin (100a), and the second metal layer (102) is provided between the first metal layer (101). For example, the electrically conductive contact pin (100a) is provided by alternately stacking the first metal layer (101), the second metal layer (102), and the first metal layer (101) in that order, and the number of stacked layers may be three or more.

[0100] Next, a second internal space (1300) is formed in the mold (1000). Fig. 6a is a plan view showing a state in which a second internal space (1300) is formed by removing a portion of the mold (1000), and Fig. 6b is a cross-sectional view taken along line A-A' of Fig. 6a.

[0101] The second internal space (1300) is formed by wet etching and removing the anodic oxide film surrounded by the adjacent beam portions (131a), the first end region (110a), and the second end region (120a). To this end, a photoresist is provided on the upper surface of the mold (1000) and patterned, and then the anodic oxide film in the patterned and open region reacts with an etching solution to form the second internal space (1300). As the anodic oxide film is removed, the second internal space (1300) is formed in a sealed form by the adjacent beam portions (131a), the first end region (110a), and the second end region (120a). The second internal space (1300) becomes a slit (132a).

[0102] Next, an electroplating process is performed on the second internal space (1300) to form a functional layer (133a). Fig. 7a is a plan view showing a state in which the functional layer (133a) is formed on the second internal space (1300), and Fig. 7b is a cross-sectional view taken along line A-A' of Fig. 7a.

[0103] An electroplating process is performed using the metal layer formed around the seed layer (1200) and the second internal space (1300) to form a functional layer in the second internal space (1300).

[0104] The functional layer (133a) may be formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof. The second metal layer (102) constituting the beam portion (131a) and the functional layer (133a) may be formed of the same metal material. For example, the second metal layer (102) and the functional layer (133a) may be formed of the same metal selected from among copper (Cu), silver (Ag), and gold (Au). Alternatively, the second metal layer (102) constituting the beam portion (131a) and the functional layer (133a) may be formed of different metal materials. For example, when the second metal layer (102) is one metal selected from among copper (Cu), silver (Ag), and gold (Au), the functional layer (133a) may be formed of a different material from the second metal layer (102) and another metal selected from among copper (Cu), silver (Ag), and gold (Au).

[0105] Meanwhile, after the plating process is completed, the plating layer can be made more dense by heating to a high temperature and applying pressure to press the metal layer on which the plating process is completed. When a photoresist material is used as a mold, the process of heating to a high temperature and applying pressure cannot be performed because the photoresist exists around the metal layer after the plating process is completed. In contrast, according to a preferred embodiment of the present invention, since a mold (1000) made of an anodic oxide film material is provided around the metal layer on which the plating process is completed, it is possible to densify the plating layer while minimizing deformation due to the low thermal expansion coefficient of the anodic oxide film even when the temperature is elevated to a high temperature. Therefore, it is possible to obtain a plating layer with a higher density than a technique using a photoresist as a mold.

[0106] Once the electroplating process is completed, a process of removing the mold (1000) and the seed layer (1200) is performed. If the mold (1000) is made of an anodic oxide film material, the mold (1000) is removed using a solution that selectively reacts with the anodic oxide film material. In addition, if the seed layer (1200) is made of a copper (Cu) material, the seed layer (1200) is removed using a solution that selectively reacts with copper (Cu).

[0107] Referring to Fig. 8, an electrically conductive contact pin (100a) according to preferred embodiments of the present invention includes a plurality of micro-trenches (88) on its side surface. The micro-trenches (88) are formed to extend long in the thickness direction (±z direction) of the electrically conductive contact pin (100a) from the side surface of the electrically conductive contact pin (100a). Here, the thickness direction (±z direction) of the electrically conductive contact pin (100a) refers to the direction in which a metal filler grows during electroplating.

[0108] The micro trench (88) has a depth in the range of 20 nm to 1 μm, and its width also has a range of 20 nm to 1 μm. Here, since the micro trench (88) is due to the pores formed during the manufacture of the anodic oxide mold, the width and depth of the micro trench (88) have values ​​less than or equal to the range of the diameters of the pores of the anodic oxide mold (1000). Meanwhile, in the process of forming the first internal space (1100) in the anodic oxide mold (1000), some of the pores of the anodic oxide mold (1000) may be crushed together by the etching solution, so that at least some of the micro trenches (88) having a depth greater than the range of the diameters of the pores formed during the anodic oxidation may be formed.

[0109] The anodic oxide mold (1000) includes numerous pores, and at least a portion of the anodic oxide mold (1000) is etched to form a first internal space (1100), and a metal filling is formed by electroplating into the first internal space (1100), so that a micro-trench (88) formed by contacting the pores of the anodic oxide mold (1000) is provided on the side surface of the electrically conductive contact pin (100a).

[0110] The above micro-trench (88) has the effect of increasing the surface area on the side surface of the electrically conductive contact pin (100a). Through the configuration of the micro-trench (88) formed on the side surface of the electrically conductive contact pin (100a), heat generated in the electrically conductive contact pin (100a) can be quickly released, thereby suppressing the temperature rise of the electrically conductive contact pin (100a). In addition, through the configuration of the micro-trench (88) formed on the side surface of the electrically conductive contact pin (100a), the torsion resistance capability of the electrically conductive contact pin (100a) when deformed can be improved.

[0111] In addition, the micro trench (88) is also formed on the side surface of the beam portion (131a) when forming the second internal space (1300) or the slit (132a). In other words, the micro trench (88) is provided on the inner wall of the slit (132a). Therefore, the functional layer (133a) formed in the second internal space (1300) is more firmly bonded to the beam portion (131a) by the micro trench (88) formed on the inner wall of the slit (132a).

[0112] The functional layer (133a) may be provided entirely in the slit (132a). That the functional layer (133a) is provided entirely in the slit (132a) means that the space formed by the slit (132a) is entirely filled with the functional layer (132a).

[0113] The functional layer (133a) may be partially provided in the slit (132a). That the functional layer (133a) is partially provided in the slit (132a) means that the space formed by the slit (132a) is partially filled with the functional layer (132a).

[0114] The functional layer (133a) may be partially provided among the plurality of slits (132a). FIGS. 9A to 9H are drawings illustrating a case in which the functional layer (133a) is partially provided among the plurality of slits (132a) in an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention. FIGS. 9A to 9H illustrate that there are three slits (132a), but the present invention is not limited thereto.

[0115] Referring to FIGS. 9a and 9b, three slits (132a) are provided, and a functional layer (133a) is provided only in the two slits (132a) on the left among the three slits (132a), and is not provided in the one slit (132a) on the right.

[0116] Referring to FIG. 9c and FIG. 9d, three slits (132a) are provided, and the functional layer (133a) is provided only in the two slits (132a) on the right among the three slits (132a), and is not provided in the one slit (132a) on the left.

[0117] Referring to FIGS. 9E and 9F, three slits (132a) are provided, and a functional layer (133a) is provided only in the middle slit (132a) among the three slits (132a), and is not provided in the two slits (132a) on the left and right.

[0118] Referring to FIG. 9g and FIG. 9h, three slits (132a) are provided, and the functional layer (133a) is provided only in the two slits (132a) on the left and right among the three slits (132a), and is not provided in the one slit (132a) in the middle.

[0119] As illustrated in FIGS. 9a to 9h, according to a configuration in which a functional layer (133a) is partially provided among a plurality of slits (132a), in addition to the effect according to the configuration of the functional layer (133a), the contact pressure and the current allowable capacity (CCC) can be appropriately selected in relation to the length of the electrically conductive contact pin (100a) and the inspection device. In addition, depending on whether the electrically conductive contact pin (100a) is a signal pin, a ground pin, or a power pin, the functional layer (133a) can be partially provided among the plurality of slits (132a).

[0120] The functional layer (133a) may be partially provided in the longitudinal direction of the slit (132a). FIGS. 10a to 10e are plan views illustrating a functional layer (133a) partially provided in the longitudinal direction of the slit (132a) in an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention.

[0121] Referring to Fig. 10a, three slits (132a) are provided, and a functional layer (133a) is provided only in the space on the lower side in the longitudinal direction (±y direction) of each slit (132a), and is not provided in the remaining space.

[0122] Referring to Fig. 10b, three slits (132a) are provided, and a functional layer (133a) is not provided in the upper space in the longitudinal direction (±y direction) of each slit (132a), but is provided only in the remaining space.

[0123] Referring to Fig. 10c, three slits (132a) are provided, and the functional layer (133a) is provided only in the upper and lower spaces in the longitudinal direction (±y direction) of each slit (132a), and is not provided in the remaining spaces.

[0124] Referring to FIG. 10d, three slits (132a) are provided, and the functional layer (133a) is provided only in the upper, lower, and central spaces in the longitudinal direction (±y direction) of the slit (132a) of each slit (132a), and is not provided in the space between the upper and central sides and the space between the lower and central sides.

[0125] Referring to Fig. 10e, three slits (132a) are provided. A functional layer (133a) is partially provided in each slit (132a) in the longitudinal direction (±y direction) of the slit (132a), and the functional layer (133a) and the empty space are arranged in a zigzag shape.

[0126] As shown in FIGS. 10a to 10e, according to a configuration in which a functional layer (133a) is partially provided in the longitudinal direction (±y direction) of a slit (132a) in an electrically conductive contact pin (100a), in addition to the effect according to the configuration of the functional layer (133a), fatigue destruction of the electrically conductive contact pin (100a) can be minimized by controlling the degree of deformation in the longitudinal direction (±y direction).

[0127] The functional layer (133a) may be partially provided in the thickness direction (±z direction) of the slit (132a). FIG. 11a is a plan view illustrating a functional layer (133a) partially provided in the thickness direction (±z direction) of the slit (132a) in an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention, and FIG. 11b is a cross-sectional view taken along line A-A' of FIG. 11a.

[0128] Referring to FIGS. 11a and 11b, the functional layer (133a) does not completely fill the internal space of the slit (132a) in the thickness direction (±z direction), and is formed in a form in which a portion of the internal space of the slit (132a) is left empty in the thickness direction (±z direction). The functional layer (133a) is not provided in the upper space in the thickness direction (±z direction) of the slit (132a), but is provided only in the remaining space.

[0129] FIG. 12a is a plan view showing a functional layer (133a) partially provided in the thickness direction (±z direction) of a slit (132a) in an electrically conductive contact pin (100a) according to a preferred first embodiment of the present invention, and FIG. 12b is a cross-sectional view taken along line A-A' of FIG. 12a.

[0130] Referring to FIGS. 12a and 12b, the functional layer (133a) is not provided in the upper space and the lower space in the thickness direction (±z direction) of the slit (132a), but is provided only in the remaining space. In addition, among the metal layers constituting the beam portion (131a), the side surface of the portion corresponding to the second metal layer (102) may be positioned more inward than the side surface of the portion corresponding to the first metal layer (101). Through this, only the first metal layer (101) protrudes and is exposed on the surface of the electrically conductive contact pin (100a). Therefore, when the electrically conductive contact pin (100a) comes into sliding contact with the guide housing (not shown) during the overdrive process, the problem of the second metal layer (102) having relatively low wear resistance being worn can be prevented.

[0131]

[0132] Electrically conductive contact pin (100b) according to the second embodiment

[0133] The electrically conductive contact pin (100b) according to the second embodiment may be a probe pin used in a probe card. More specifically, it may be a cantilever-type probe pin for inspecting a semiconductor wafer.

[0134] Hereinafter, an electrically conductive contact pin (100b) according to a second preferred embodiment of the present invention will be described with reference to FIGS. 13a to 14b. FIG. 13a is a plan view of an electrically conductive contact pin (100b) according to a second preferred embodiment of the present invention before a functional layer (133b) is provided in a slit (132b) in the electrically conductive contact pin (100b), and FIG. 13b is a cross-sectional view taken along line A-A' of FIG. 13a. FIG. 14a is a plan view of an electrically conductive contact pin (100b) according to a second preferred embodiment of the present invention, and FIG. 14b is a cross-sectional view taken along line A-A' of FIG. 14a.

[0135] The electrically conductive contact pin (100b) includes a first end region (110b), a second end region (120b), and a body region (130b) positioned between the first and second end regions (110b, 120b). The first end region (110b) is a region connected to a connection pad of a space converter, and the second end region (120b) is a region connected to an external terminal of a semiconductor wafer. The body region (130b) is a region that is deformed while having a different curvature in the longitudinal direction (±y direction) by a pressing force applied through both end regions.

[0136] The body region (130b) includes at least two beam sections (131b). The beam sections (131b) are separated from each other by slits (132b). The beam sections (131b) positioned on both sides of the slits (132b) with the slits (132b) interposed therebetween are separated or spaced apart from each other.

[0137] The slit (132b) is formed long along the width direction (±x direction) of the body region (130b). In addition, a plurality of slits (132b) may be provided spaced apart from each other in the width direction, and for example, there may be seven slits (132b).

[0138] A functional layer (133b) is provided inside the slit (132b). The beam portion (131b) and the functional layer (133b) are alternately arranged along the longitudinal direction (±y direction). In addition, the beam portion (131b) and the functional layer (133b) are arranged parallel to each other.

[0139] Each slit (132b) has a length in the width direction (±x direction) and a length in the length direction (±y direction). Here, since the length in the length direction (±y direction) of the slit (132a) is formed shorter than the length in the width direction (±x direction) of the slit (132b), the length in the width direction (±x direction) of the functional layer (133b) is longer than the length in the length direction (±y direction) of the functional layer (133b).

[0140] The beam portion (131b) is provided by laminating a plurality of different metal layers, and the functional layer (133b) can be formed of a single metal. A plurality of metal layers are provided by laminating a plurality of metal layers in the thickness direction (±z direction) of the beam portion (131b). The plurality of metal layers include a first metal layer (101) and a second metal layer (102).

[0141] The first metal layer (101) is formed of a metal having relatively high wear resistance or elastic modulus compared to the second metal layer (102), and is preferably formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy. The second metal layer (102) is formed of a metal having relatively high electrical conductivity compared to the first metal layer (101), and is preferably formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0142] The first metal layer (101) is provided on the lower and upper surfaces in the thickness direction (±z direction) of the electrically conductive contact pin (100b), and the second metal layer (102) is provided between the first metal layer (101). For example, the beam portion (131b) is provided by alternately stacking the first metal layer (101), the second metal layer (102), and the first metal layer (101) in that order, and the number of stacked layers may be three or more.

[0143] The functional layer (133b) may be formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0144] The second metal layer (102) and the functional layer (133b) constituting the beam portion (131b) may be formed of the same metal material. For example, the second metal layer (102) and the functional layer (133b) may be formed of the same metal selected from among copper (Cu), silver (Ag), and gold (Au).

[0145] Alternatively, the second metal layer (102) and the functional layer (133b) constituting the beam portion (131b) may be made of different metal materials. For example, when the second metal layer (102) is a metal selected from among copper (Cu), silver (Ag), and gold (Au), the functional layer (133b) may be formed of a different material from the second metal layer (102) and another metal selected from among copper (Cu), silver (Ag), and gold (Au).

[0146] The first end region (110b) and / or the second end region (120b) may be formed by stacking a plurality of metal layers, including a first metal layer (101) and a second metal layer (102), taking into account the current carrying capacity (CCC). In this case, the first end region (110b) and / or the second end region (120b) may be formed by integrally extending the first metal layer (101) and the second metal layer (102) constituting the beam portion (131b).

[0147] Alternatively, the first end region (110b) and / or the second end region (120b) may be formed of a metal of a different material from the beam portion (131b) in consideration of wear resistance. For example, the first end region (110b) and / or the second end region (120b) may be formed of a single material selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or alloys thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy.

[0148] The functional layer (133b) has an electrical conductivity higher than that of the beam portion (131b). Regardless of whether the beam portion (131b) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133b) has an electrical conductivity higher than that of the beam portion (131b). Here, when the beam portion (131b) is composed of a plurality of metal layers, the electrical conductivity of the beam portion (131b) means an average electrical conductivity of the plurality of metal layers.

[0149] The functional layer (133b) has an elastic modulus lower than that of the beam portion (131b). Regardless of whether the beam portion (131b) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133b) has an electrical conductivity lower than the elastic modulus of the beam portion (131b). Here, when the beam portion (131b) is composed of a plurality of metal layers, the elastic modulus of the beam portion (131b) means an average elastic modulus of the plurality of metal layers.

[0150] The functional layer (133b) is in contact with a plurality of metal layers provided in the thickness direction (±z direction) of the beam portion (131b) at the joint surface with the beam portion (131b). The beam portion (131b) is configured by alternately laminating a first metal layer (101) and a second metal layer (102). Through this, the second metal layers (102) of the beam portion (131b) having high electrical conductivity are connected to the functional layer (133b) having high electrical conductivity. In a structure without the functional layer (133b), the second metal layers (102) constituting the beam portion (131b) are disconnected in the thickness direction (±z direction) by the first metal layer (101), but according to an embodiment of the present invention, the second metal layers (102) constituting the beam portion (131b) are connected to each other by the functional layer (133b), so that the second metal layers (102) are in a structure in which they are conductive to each other. This allows the current carrying capacity (CCC) of the electrically conductive contact pin (100b) to be improved.

[0151] Meanwhile, if the interior of the slit (132b) is left empty, stress may be concentrated at the end of the slit (132b) due to a sudden change in cross-sectional area, which may result in local destruction of the beam portion (131b). However, according to an embodiment of the present invention, by providing a functional layer (133b) inside the slit (132b), a sudden increase in stress at the end of the slit (132b) is prevented, thereby preventing local destruction of the slit (132b).

[0152] As described above, the present invention provides a beam portion (131b) with multilayer plating of first and second metal layers (101, 102) to lower the elastic coefficient and prevent the contact pressure from increasing, and provides a functional layer (133b) inside the slit (132b), and forms the functional layer (133b) with at least one metal among copper (Cu), silver (Ag), and gold (Au) having high electrical conductivity, thereby improving the current carrying capacity (CCC) and preventing local destruction of the slit (132b).

[0153]

[0154] Electrically conductive contact pin (100c) according to the third embodiment

[0155] The electrically conductive contact pin (100c) according to the third embodiment may be a socket pin used in a test socket. More specifically, the electrically conductive contact pin (100c) may be a pin inserted into a guide hole of a guide housing (150c) and used to inspect a semiconductor package.

[0156] Hereinafter, an electrically conductive contact pin (100c) according to a third preferred embodiment of the present invention will be described with reference to FIGS. 15a to 16b. FIG. 15a is a plan view of an electrically conductive contact pin (100c) according to a third preferred embodiment of the present invention before a functional layer (133c) is provided in a slit (132c) in the electrically conductive contact pin (100c), and FIG. 15b is a cross-sectional view taken along line A-A' of FIG. 15a. FIG. 16a is a plan view of an electrically conductive contact pin (100c) according to a third preferred embodiment of the present invention, and FIG. 16b is a cross-sectional view taken along line A-A' of FIG. 16a.

[0157] The electrically conductive contact pin (100c) includes a first end region (110c), a second end region (120c), and a body region (130c) positioned between the first and second end regions (110c, 120c). The first end region (110c) is a region connected to a connection pad of a circuit board, and the second end region (120c) is a region connected to an external terminal of a semiconductor package. The body region (130c) is a region that is deformed by a pressing force applied through both end regions.

[0158] The body region (130c) includes a spring portion (140c) having a curved portion (143c). The spring portion (140c) is formed by alternately connecting a plurality of straight portions (141c) and a plurality of curved portions (143c). The straight portions (141c) connect the curved portions (143c) adjacent to the left and right, and the curved portions (143c) connect the straight portions (141c) adjacent to the top and bottom. The curved portions (143c) are formed in an arc shape.

[0159] The spring portion (140c) of the body region (130c) includes at least two beam portions (131c). The beam portions (131c) are separated from each other by a slit (132c). The beam portions (131c) positioned on both sides of the slit (132c) with the slit (132c) interposed therebetween are separated or spaced apart from each other.

[0160] The slit (132c) may be provided only in the curved portion (143c) and not in the straight portion (141c). A plurality of slits (132c) provided in the curved portion (143c) may be provided spaced apart from each other in the width direction. However, only one slit (132c) is illustrated in the drawing. Meanwhile, although not illustrated in the drawing, the slit (132c) may be provided only in the straight portion (141c) and not in the curved portion (143c), or the slit (132c) may be provided in both the straight portion (141c) and the curved portion (143c).

[0161] A functional layer (133c) is provided inside the slit (132c).

[0162] The beam portion (131c) is provided by laminating a plurality of different metal layers, and the functional layer (133c) can be formed of a single metal. The beam portion (131c) is provided by laminating a plurality of metal layers in the thickness direction (±z direction). The plurality of metal layers include a first metal layer (101) and a second metal layer (102).

[0163] The first metal layer (101) is formed of a metal having relatively high wear resistance or elastic modulus compared to the second metal layer (102), and is preferably formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy. The second metal layer (102) is formed of a metal having relatively high electrical conductivity compared to the first metal layer (101), and is preferably formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0164] The first metal layer (101) is provided on the lower and upper surfaces in the thickness direction (±z direction) of the electrically conductive contact pin (100b), and the second metal layer (102) is provided between the first metal layer (101). For example, the beam portion (131c) is provided by alternately stacking the first metal layer (101), the second metal layer (102), and the first metal layer (101) in that order, and the number of stacked layers may be three or more.

[0165] The functional layer (133c) can be formed of a metal selected from among copper (Cu), silver (Ag), gold (Au), or an alloy thereof.

[0166] The second metal layer (102) and the functional layer (133c) constituting the beam portion (131c) may be formed of the same metal material. For example, the second metal layer (102) and the functional layer (133c) may be formed of the same metal selected from among copper (Cu), silver (Ag), and gold (Au).

[0167] Alternatively, the second metal layer (102) and the functional layer (133c) constituting the beam portion (131c) may be made of different metal materials. For example, when the second metal layer (102) is made of one metal selected from among copper (Cu), silver (Ag), and gold (Au), the functional layer (133c) may be made of a different material from the second metal layer (102) and another metal selected from among copper (Cu), silver (Ag), and gold (Au).

[0168] The first end region (110c) and / or the second end region (120c) may be formed by laminating a plurality of metal layers, including the first metal layer (101) and the second metal layer (102), taking into account the current carrying capacity (CCC). In this case, the first end region (110c) and / or the second end region (120c) may be formed by integrally extending the first metal layer (101) and the second metal layer (102) constituting the beam portion (131c).

[0169] Alternatively, the first end region (110c) and / or the second end region (120c) may be formed of a metal of a different material from the beam portion (131c) in consideration of wear resistance. For example, the first end region (110c) and / or the second end region (120c) may be formed of a single material selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph), or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy.

[0170] The functional layer (133c) has an electrical conductivity higher than that of the beam portion (131c). Regardless of whether the beam portion (131c) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133c) has an electrical conductivity higher than that of the beam portion (131c). Here, when the beam portion (131c) is composed of a plurality of metal layers, the electrical conductivity of the beam portion (131c) means an average electrical conductivity of the plurality of metal layers.

[0171] The functional layer (133c) has an elastic modulus lower than that of the beam portion (131c). Regardless of whether the beam portion (131c) is composed of a single metal layer or a plurality of metal layers including the first and second metal layers (101, 102), the functional layer (133c) has an electrical conductivity lower than the elastic modulus of the beam portion (131c). Here, when the beam portion (131c) is composed of a plurality of metal layers, the elastic modulus of the beam portion (131c) means an average elastic modulus of the plurality of metal layers.

[0172] The functional layer (133c) is in contact with a plurality of metal layers provided in the thickness direction (±z direction) of the beam portion (131c) at the joint surface with the beam portion (131c). The beam portion (131c) is configured by alternately laminating metal layers having relatively high hardness and metal layers having relatively high electrical conductivity, and the functional layer (133c) having high electrical conductivity is in contact with the side surface of the beam portion (131c). Through this, the metal layers of the beam portion (131c) having high electrical conductivity are connected to the functional layer (133c) having high electrical conductivity, thereby improving the current carrying capacity (CCC) of the electrically conductive contact pin (100c).

[0173] If the interior of the slit (132c) is left empty, stress may be concentrated at the end side of the slit (132c) due to a sudden change in cross-sectional area, which may result in local destruction of the beam portion (131c). However, according to an embodiment of the present invention, by providing a functional layer (133c) inside the slit (132c), a sudden increase in stress at the end side of the slit (132c) is prevented, thereby preventing local destruction of the slit (132c).

[0174] The electrically conductive contact pin (100c) further includes a support portion (170c). The support portion (170c) has an upper engaging portion (171c) and a lower engaging portion (173c). The upper engaging portion (171c) is provided at an upper portion of the support portion (170c) to prevent the electrically conductive contact pin (100c) from falling downward into the guide housing (150c). The lower engaging portion (173c) is provided at a lower portion of the support portion (170c) to prevent the electrically conductive contact pin (100c) from falling upward from the guide housing (150c). The upper engaging portion (171c) can be caught on an upper surface of the guide housing (150c), and the lower engaging portion (173c) can be caught on a lower surface of the guide housing (150c).

[0175] The first end region (110c) is provided with a first hollow portion (111c). When the first end region (110c) comes into contact with a pad of a circuit board, the first hollow portion (111c) enables elastic deformation of the first end region (110c). The second end region (120c) is provided with a second hollow portion (121c). When the second end region (120c) comes into contact with a terminal of a semiconductor package, the second hollow portion (121c) enables elastic deformation of the second end region (120c).

[0176] The first end region (110c), the second end region (120c), the body region (130c), and the support portion (170c) of the electrically conductive contact pin (100c) are formed as an integral body. The first end region (110c), the second end region (120c), the body region (130c), and the support portion (170c) are manufactured at once using a plating process. The electrically conductive contact pin (100c) is manufactured by proceeding with the same process sequence as the manufacturing method of the first embodiment described above, so that the first end region (110c), the second end region (120c), the body region (130c), and the support portion (170c) are manufactured as an integral body that is connected to each other.

[0177] The guide housing (150c) is made of silicon nitride (Si3N4) or polyimide (PI) material. In this case, the guide hole formed in the guide housing (150c) is formed by processing using a laser. Since the guide hole is formed using a laser, the upper and lower widths of the guide hole differ depending on the thickness of the guide housing (150c), but have a difference of approximately 10 μm or more and less than 20 μm. That is, the guide hole formed in the guide housing (150c) has a trapezoidal cross-section with an inclined shape. In order for the outer wall of the support member (170c) to be in close contact with the guide hole, the outer wall of the support member (170c) is also provided with an inclined shape corresponding to the inclined structure of the guide hole. Through this, the support member (170c) is tightly pressed against the guide hole of the guide housing (150c) without any play, thereby preventing the electrically conductive contact pin (100c) from being detached from the guide housing (150c) during inspection, and preventing the contact point with the connection pad of the circuit board and / or the external terminal of the semiconductor package from changing during inspection.

[0178] As described above, the present invention has been described with reference to preferred embodiments thereof, but it will be apparent to those skilled in the art that various modifications or variations may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the following claims.

[0179] [Explanation of symbols]

[0180] 100a, 100b, 100c: Electrically conductive contact pins

[0181] 110a, 110b, 110c: First section area

[0182] 120a, 120b 120c: Second stage area

[0183] 130a, 130b, 130c: Body area

[0184] 131a, 131b, 131c: Beam section

[0185] 132a, 132b, 132c: Slits

[0186] 133a, 133bb 133c: Functional layer

Claims

1. An electrically conductive contact pin comprising a first end region, a second end region, and a body region positioned between the first and second end regions, wherein the body region includes at least two of the beam portions, and the adjacent beam portions are spaced apart from each other by a slit. An electrically conductive contact pin comprising a functional layer provided inside the slit.

2. In paragraph 1, An electrically conductive contact pin, wherein the functional layer has an electrical conductivity greater than the electrical conductivity of the beam portion.

3. In paragraph 1, The functional layer is an electrically conductive contact pin having an elastic modulus smaller than an elastic modulus of the beam portion.

4. In paragraph 1, An electrically conductive contact pin in which the beam portion is formed by laminating a plurality of different metal layers, and the functional layer is formed by a single metal layer.

5. In paragraph 1, The above beam portion includes a first metal layer and a second metal layer, The first metal layer is formed of a metal selected from among rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), nickel (Ni), manganese (Mn), tungsten (W), phosphorus (Ph) or an alloy thereof, or a palladium-cobalt (PdCo) alloy, a palladium-nickel (PdNi) alloy, a nickel-phosphorus (NiPh) alloy, a nickel-manganese (NiMn), a nickel-cobalt (NiCo), or a nickel-tungsten (NiW) alloy, The second metal layer is formed of a metal selected from among copper (Cu), silver (Ag), gold (Au) or an alloy thereof. The above functional layer is an electrically conductive contact pin formed of a metal selected from among copper (Cu), silver (Ag), gold (Au) or an alloy thereof.

6. In paragraph 1, The above functional layer is an electrically conductive contact pin composed of a material different from the metal layer constituting the beam portion.

7. In paragraph 1, The functional layer is an electrically conductive contact pin having the same material as any one of the plurality of metal layers constituting the beam portion.

8. In paragraph 1, The functional layer is an electrically conductive contact pin that comes into contact with a plurality of metal layers provided in the height direction of the beam portion at the joint surface with the beam portion.

9. In paragraph 1, The above functional layer is an electrically conductive contact pin provided entirely in the above slit.

10. In paragraph 1, The above functional layer is an electrically conductive contact pin partially provided among the plurality of above slits.

11. In paragraph 1, The above functional layer is an electrically conductive contact pin partially provided in the longitudinal direction of the above slit.

12. In paragraph 1, An electrically conductive contact pin, wherein the functional layer is partially provided in the thickness direction of the slit.

13. In paragraph 1, An electrically conductive contact pin, wherein the beam portion is elastically deformed by a pressing force applied to the electrically conductive contact pin.

14. In paragraph 1, An electrically conductive contact pin in which the beam portion and the functional layer are alternately arranged.

15. In paragraph 1, An electrically conductive contact pin, wherein the beam portion and the functional layer are arranged parallel to each other.

16. In paragraph 1, The above body region includes a spring portion having a curved portion, The above slit is an electrically conductive contact pin provided in the above curved portion.

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