Electronic device

Abstract

This electronic device comprises a substrate, an electronic element, a columnar part, and a sealing resin. The substrate has: an insulating layer having an insulating layer main surface facing a first side in the thickness direction and an insulating layer rear surface; and an electrically conductive part that is exposed from the insulating layer main surface and the insulating layer rear surface. The electronic element has: an element body including an element main surface facing the insulating layer main surface in the thickness direction; and a plurality of electrodes disposed on the element main surface. The plurality of electrodes are electrically joined to the electrically conductive part. The columnar part protrudes in the thickness direction, from the electrically conductive part toward the first side in the thickness direction, and possesses electrical conductivity. The sealing resin covers the insulating layer main surface, the electronic element, and the columnar part.

Description

electronic equipment

[0001] The present disclosure relates to electronic devices.

[0002] Various electronic devices including electronic elements have been proposed in the past. For example, Patent Document 1 discloses a semiconductor device as an example of a conventional electronic device. The semiconductor device described in Patent Document 1 includes a substrate having a substrate main surface, a semiconductor element disposed on the substrate main surface, a wiring portion, a substrate metal layer, and a sealing resin. The sealing resin covers the substrate main surface and the semiconductor element.

[0003] Japanese Patent Application Laid-Open No. 2021-93454

[0004] Summary: It is desirable that heat generated when an electronic element is energized be quickly dissipated to the outside of the electronic device.

[0005] An electronic device according to one embodiment of the present disclosure comprises: a substrate having an insulating layer having an insulating layer main surface facing a first side in a thickness direction and an insulating layer back surface facing a second side opposite the insulating layer main surface; and a conductive portion exposed from the insulating layer main surface and the insulating layer back surface; an electronic element having an element body including an element main surface facing the insulating layer main surface in the thickness direction and a plurality of electrodes arranged on the element main surface, the plurality of electrodes being electrically connected to the conductive portions; a conductive columnar portion protruding from the conductive portion toward the first side in the thickness direction from the conductive portion in the thickness direction; and a sealing resin covering the insulating layer main surface, the electronic element, and the columnar portion.

[0006] FIG. 1 is a plan view showing an electronic device according to a first embodiment. FIG. 2 is a partial plan view showing a semiconductor device according to the plan view of FIG. 1. FIG. 3 is a partial plan view showing a semiconductor device according to the plan view of FIG. 2. FIG. 4 is a front view showing an electronic device according to the first embodiment. FIG. 5 is a bottom view showing an electronic device according to the first embodiment. FIG. 6 is a left side view showing an electronic device according to the first embodiment. FIG. 7 is a right side view showing an electronic device according to the first embodiment. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 1. FIG. 9 is a partially enlarged cross-sectional view of a portion of FIG. 8. FIG. 10 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8. FIG. 11 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8. FIG. 12 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8. FIG. 13 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8. FIG. 14 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 15 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 16 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 17 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 18 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 19 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 20 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 21 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 22 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 23 is a cross-sectional view showing a step of the method for manufacturing an electronic device according to the first embodiment, corresponding to the cross section of FIG. 8 . FIG. 24 is a cross-sectional view showing one step of the method for manufacturing the electronic device according to the first embodiment, and corresponds to the cross section of FIG.FIG. 25 is a cross-sectional view showing a first modified example of the electronic device according to the first embodiment. FIG. 26 is a cross-sectional view showing a second modified example of the electronic device according to the first embodiment. FIG. 27 is a cross-sectional view showing a third modified example of the electronic device according to the first embodiment. FIG. 28 is a plan view showing a fourth modified example of the electronic device according to the first embodiment. FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 28. FIG. 30 is a plan view showing a fifth modified example of the electronic device according to the first embodiment. FIG. 31 is a plan view showing a sixth modified example of the electronic device according to the first embodiment. FIG. 32 is a partial plan view showing an electronic device according to the second embodiment. FIG. 33 is a cross-sectional view taken along line XXXIII-XXXIII in FIG. 32. FIG. 34 is a partially enlarged cross-sectional view showing a portion of FIG. 33. FIG. 35 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34. FIG. 36 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34. FIG. 37 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34 . FIG. 38 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34 . FIG. 39 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34 . FIG. 40 is a cross-sectional view showing a step of a method for manufacturing an electronic device according to the second embodiment, corresponding to the cross section of FIG. 34 . FIG. 41 is a partially enlarged cross-sectional view showing a first modified example of the electronic device according to the second embodiment. FIG. 42 is a cross-sectional view showing a step of a method for manufacturing a first modified example of the electronic device according to the second embodiment, corresponding to the cross section of FIG. 41 . FIG. 43 is a cross-sectional view showing a step of a method for manufacturing a first modified example of the electronic device according to the second embodiment, corresponding to the cross section of FIG. 41 . FIG. 44 is a cross-sectional view showing a step of a method for manufacturing a first modified example of the electronic device according to the second embodiment, corresponding to the cross section of FIG. 41 .

[0007] DETAILED DESCRIPTION: Preferred embodiments of the electronic device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant descriptions will be omitted. Terms such as "first," "second," and "third" in this disclosure are merely used as labels and are not intended to necessarily assign any order to the objects.

[0008] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "object A overlaps object B when viewed in a certain direction" includes "object A overlaps the entire object B" and "object A overlaps a part of object B." Furthermore, the phrase "object A (its material) includes object C" includes "object A (its material) is made of material C" and "object A (its material) is mainly composed of material C." Furthermore, unless otherwise specified, the phrase "a surface A faces in a certain direction B (to one side or the other)" does not necessarily mean that surface A is at an angle of 90° to direction B, but also includes the case where surface A is tilted with respect to direction B.

[0009] 1 to 9 show an electronic device A10 according to a first embodiment. The electronic device A10 includes an insulating layer 2, a conductive portion 3, an electronic element 4, a columnar portion 5, and a sealing resin 7. In this embodiment, a metal layer 6 is provided as an auxiliary function. The electronic device A10 is a device that is surface-mounted on a wiring board of an electronic device, an electric vehicle, or the like. The electronic device A10 is a leadless package type, and in particular, a QFN package (Quad Flat Non-leaded Package) type. The electronic device A10 is rectangular in plan view.

[0010] For ease of explanation, the following refers to a thickness direction z, a first direction x, and a second direction y, which are perpendicular to each other. The thickness direction z corresponds to the thickness direction of the electronic device A10. In the following explanation, one side of the thickness direction z may be referred to as "upper" and corresponds to the first side in this disclosure. The other side of the thickness direction z may be referred to as "lower" and corresponds to the second side in this disclosure. Terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity. "Planar view" refers to the view in the thickness direction z.

[0011] In this embodiment, the electronic element 4 is a semiconductor element, for example, an integrated circuit such as an LSI. Unlike this example, the electronic element 4 may be a voltage control element such as an LDO (Low Drop Out), an amplification element such as an operational amplifier, or a discrete element such as a transistor or diode. The electronic element 4 is rectangular in plan view. The electronic element 4 is connected to the junction 49. The electronic element 4 overlaps the junction 49 in plan view.

[0012] The electronic element 4 has an element body 40. The element body 40 is mainly composed of, for example, a semiconductor material, a metal material, or the like. The element body 40 has an element main surface 41, an element rear surface 42, and an element side surface 43. The element main surface 41 and the element rear surface 42 are spaced apart in the thickness direction z. The element main surface 41 and the element rear surface 42 face in opposite directions. The element side surface 43 is located between the element main surface 41 and the element rear surface 42 in the thickness direction z. In this embodiment, the element side surface 43 faces in the first direction x or the second direction y. The element main surface 41 and the element side surface 43 are covered with a sealing resin.

[0013] As shown in FIGS. 8 and 9 , the electronic element 4 has an element body 40 and multiple electrodes 47. For example, in an example where the electronic element 4 is an LSI, the element body 40 includes a semiconductor material. The multiple electrodes 47 are electrically connected to a circuit (not shown) configured in the element body 40. The element main surface 41 corresponds to the lower surface (the surface facing downward in the thickness direction z) of the element body 40. In the example shown in FIGS. 8 and 9 , each electrode 47 protrudes downward in the thickness direction z from the element main surface 41. However, the electrodes 47 may be flush with the element main surface 41 or may be recessed upward in the thickness direction z from the element main surface 41. The element main surface 41 is partially covered with an insulating film (not shown), and each electrode 47 is exposed from the insulating film. The insulating film includes, for example, polyimide or polybenzoxazole. Each electrode 47 includes a metal material. The metal material is, for example, aluminum, silver, gold, or copper. Each electrode 47 may have a single-layer structure or a multi-layer laminate structure.

[0014] The substrate 1 is a support that supports the electronic element 4. The substrate 1 includes an insulating layer 2 and a conductive portion 3.

[0015] As shown in Figures 2 and 6 to 9, the insulating layer 2 supports the electronic element 4. The insulating layer 2 includes, for example, a resin material. The resin material may be the same as, for example, the sealing resin 7, or may be different from the sealing resin 7. The insulating layer 2 may not be a resin material, but may be configured to include a single-crystal intrinsic semiconductor (for example, silicon (Si)), may be configured to include glass, or may be configured to include ceramic. As shown in Figures 2 and 3, the insulating layer 2 has a rectangular shape in a planar view. The thickness of the insulating layer 2 (the dimension along the thickness direction z) is not limited in any way, but is, for example, 30 µm or more and 300 µm or less.

[0016] As shown in FIGS. 2 to 8 , the insulating layer 2 includes an insulating layer main surface 21, an insulating layer back surface 22, two insulating layer side surfaces 23, and two insulating layer side surfaces 24. The insulating layer main surface 21 and the insulating layer back surface 22 are spaced apart in the thickness direction z. The insulating layer main surface 21 and the insulating layer back surface 22 face opposite each other. The insulating layer main surface 21 is the upper surface of the insulating layer 2, and the insulating layer back surface 22 is the lower surface of the insulating layer 2. The insulating layer main surface 21 faces the electronic element 4. The insulating layer back surface 22 faces the circuit board when the electronic device A10 is mounted on the circuit board. In this embodiment, the insulating layer 2 is covered with the sealing resin 7, and the insulating layer back surface 22 is exposed from the sealing resin 7. As shown in FIGS. 2 to 8 , each insulating layer side surface 23 and each insulating layer side surface 24 is sandwiched between the insulating layer main surface 21 and the insulating layer back surface 22. Each insulating layer side surface 23 and each insulating layer side surface 24 includes an upper end in the thickness direction z that connects to the insulating layer main surface 21 and a lower end in the thickness direction z that connects to the insulating layer rear surface 22. The two insulating layer side surfaces 23 are a pair of side surfaces that face each other in the x direction. The two insulating layer side surfaces 24 are a pair of side surfaces that face each other in the y direction and are in contact with the two insulating layer side surfaces 23, respectively.

[0017] A plurality of bonding portions 49 bond the conductive portion 3 and the electronic element 4. The bonding portions 49 are made of a conductive bonding material. The bonding portions 49 include a barrier metal 491 and a solder layer 492. The solder layer 492 includes an alloy containing tin (Sn) in its composition (e.g., an Sn-silver (Ag) alloy), and also contains flux. Note that the composition of the bonding portions 49 is not limited to this example and can be changed within a reasonable range.

[0018] Each of the joints 49 is interposed between one of the plurality of electrodes 47 of the electronic element 4 and the conductive portion 3, and joins them together. As a result, the electronic element 4 is electrically connected to the conductive portion 3 via the plurality of joints 49.

[0019] The conductive portion 3 is a conductor disposed inside the electronic device A 10. The conductive portion 3 includes a plurality of terminal portions 31 and a plurality of wiring portions 32.

[0020] As shown in FIG. 9 , each wiring portion 32 includes a wiring portion main surface 321 and a wiring portion back surface 322. The wiring portion main surface 321 and the wiring portion back surface 322 are spaced apart in the thickness direction z. The wiring portion main surface 321 and the wiring portion back surface 322 face opposite each other. The wiring portion main surface 321 is the upper surface of the wiring portion 32, and the wiring portion back surface 322 is the lower surface of the wiring portion 32. The wiring portion 32 includes, for example, a seed layer 3201 and a plating layer 3202. The seed layer 3201 is formed on the insulating layer main surface 21 and is in contact with the insulating layer 2. The seed layer 3201 includes, for example, titanium. The plating layer 3202 layer is laminated on the seed layer 3201. The plating layer 3202 includes, for example, copper. Alternatively, the wiring portion 32 may be a single layer made of a conductor. The thickness of the wiring portion 32 (dimension in the thickness direction z) is not particularly limited, but is, for example, not less than 10 μm and not more than 100 μm.

[0021] The plurality of terminal portions 31 penetrate the insulating layer 2 in the thickness direction z. Each terminal portion 31 is connected to the wiring portion 32 and each of the plurality of conductor films 315, and electrically connects the wiring portion 32 and each conductor film 315. The terminal portion 31 includes, for example, a metal material. The metal material is not limited in any way, but is, for example, copper.

[0022] Although there are no limitations on the shape of the terminal portion 31 in a plan view, in the illustrated example, the terminal portion 31 is rectangular. In the illustrated example, the upper surface (terminal portion main surface 311) of each terminal portion 31 is flush with the insulating layer main surface of the insulating layer 2.

[0023] Each terminal 31 has a terminal main surface 311, a terminal back surface 312, and a terminal side surface 313. The terminal main surface 311 faces upward in the thickness direction z. The terminal back surface 312 faces downward in the thickness direction z. The upper end of the terminal side surface 313 in the thickness direction z is connected to the terminal main surface 311, and the lower end of the terminal side surface 313 in the thickness direction z is connected to the terminal back surface 312. The terminal back surface 312 may be exposed from the insulating layer back surface 22 of the insulating layer 2. As shown in FIG. 9 , the terminal back surface 312 is, for example, flush with the insulating layer back surface 22.

[0024] The multiple conductor films 315 are electrically connected to the multiple wiring portions 32, respectively, and are conductive films exposed to the outside of the electronic device A10. Each conductor film 315 has a lower conductor film 3152 in contact with the terminal portion rear surface 312. The conductor film 315 may have a side conductor film 3151 in contact with the terminal portion side surface 313. The conductor film 315 connects the electronic device A10 to the circuit board when the electronic device A10 is mounted on the circuit board. The conductor film 315 protrudes from the insulating layer rear surface 22. The conductor film 315 is formed, for example, by electroless plating. The conductor film 315 is composed of multiple metal layers, for example, stacked in the following order from the side in contact with the terminal portion 31: a Ni layer, a palladium (Pd) layer, and a gold (Au) layer. Alternatively, the conductor film 315 may be made of a plurality of metal layers, such as a Ni layer and an Au layer, stacked in this order from the side in contact with the terminal portion 31, or a plurality of metal layers, such as a Cu layer, an Ag layer, and an Sn layer, stacked in this order. The material and the method for forming the conductor film 315 are not limited to these examples.

[0025] The multiple columnar portions 5 are arranged in a direction in which the insulating layer main surface 21 faces the insulating layer 2. The columnar portions 5 are arranged on the wiring portion 32 of the conductive portion 3 and protrude upward in the thickness direction z from the wiring portion 32. The planar shape of the columnar portions 5 is not limited in any way, but in the illustrated example, they are rectangular extending in the second direction y. The columnar portions 5 are conductive and include, for example, a metal material. The metal material is, for example, copper. The columnar portions 5 are formed, for example, by electrolytic plating. The size of the columnar portions 5 in the thickness direction z may be larger or smaller than the thickness of the electronic element 4. In this embodiment, the columnar portions 5 are formed so as to penetrate the resin main surface 71 in the thickness direction z. Furthermore, in this embodiment, the shape and size of the cross section of the columnar portions 5 perpendicular to the thickness direction z are substantially the same throughout the entire length in the thickness direction z, but are not limited to this. Either or both of the shape and size of the cross section of the columnar portions 5 perpendicular to the thickness direction z may be configured to differ in each portion in the thickness direction z.

[0026] Each columnar portion 5 has a columnar portion main surface 51, a columnar portion back surface 52, and a columnar portion side surface 53. The columnar portion main surface 51 faces upward in the thickness direction z. The columnar portion back surface 52 faces downward in the thickness direction z. The upper end of the columnar portion side surface 53 in the thickness direction z is connected to the columnar portion main surface 51, and the lower end of the columnar portion side surface 53 in the thickness direction z is connected to the columnar portion back surface 52. As shown in FIG. 9 , the terminal portion back surface 312 is flush with, for example, the insulating layer back surface 22.

[0027] The metal layer 6 is disposed on the element rear surface 42. The metal layer 6 may have a metal layer main surface 61, a metal layer rear surface 62, and a metal layer side surface 63. The metal layer main surface 61 faces upward in the thickness direction z. The metal layer rear surface 62 faces downward in the thickness direction z. The upper end of the metal layer side surface 63 in the thickness direction z is connected to the metal layer main surface 61, and the lower end of the metal layer side surface 63 in the thickness direction z is connected to the metal layer rear surface 62. As shown in FIGS. 4, 8, and 9, the metal layer 6 is disposed on the electronic element 4 and multiple columnar portions 5.

[0028] The sealing resin 7 is a synthetic resin whose main component is, for example, a black epoxy resin. The sealing resin 7 may contain a filler such as silica mixed into the epoxy resin. As shown in FIGS. 1 , 2 , 4 , 6 , and 7 , the sealing resin 7 covers the electronic element 4 and the multiple columnar portions 5. The sealing resin 7 also covers a portion of the insulating layer 2, the multiple joint portions 49, and the multiple wiring portions 32. The sealing resin 7 is formed on the insulating layer main surface 21. The sealing resin has a rectangular shape in a plan view. The thickness of the sealing resin 7 (the dimension along the thickness direction z) is not limited in any way, but is, for example, 200 μm or more and 1200 μm or less. As shown in FIGS. 1 , 2 , 4 , 6 , and 7 , the sealing resin 7 has a resin main surface 71, a resin back surface 72, and multiple resin side surfaces 73.

[0029] As shown in FIGS. 4 , 6 , and 7 , the resin main surface 71 and the resin back surface 72 are spaced apart in the thickness direction z. The resin main surface 71 and the resin back surface 72 face opposite each other in the thickness direction z. The resin main surface 71 faces the same direction as the element back surface 42 of the electronic element 4 and the insulating layer main surface 21 in the thickness direction z. In this embodiment, a portion of the electronic element 4 is disposed on the resin back surface 72. The resin back surface 72 faces the same direction as the element main surface 41 of the electronic element 4 and the insulating layer back surface 22 in the thickness direction z. The resin back surface 72 is in contact with the insulating layer main surface 21. The resin back surface has irregularities according to the shape of the wiring portion 32. As shown in FIGS. 4 , 6 , and 7 , each of the multiple resin side surfaces 73 is sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z and is connected to them. As shown in Figures 1 and 2, the multiple resin side surfaces 73 include those facing in one direction of the first direction x, those facing in the other direction of the first direction x, those facing in one direction of the second direction y, and those facing in the other direction of the second direction y.

[0030] Next, an example of a method for drafting the electronic device A10 will be described with reference to Figures 10 to 24. Each of Figures 10 to 24 is a cross-sectional view showing one step in the manufacturing method for the electronic device A10. These cross-sectional views correspond to the cross section shown in Figure 8.

[0031] First, as shown in FIG. 10 , a support substrate 81 is prepared, and a plurality of pillars 82 are formed on the support substrate 81. The support substrate 81 includes, for example, a single-crystal intrinsic semiconductor material. The semiconductor material is, for example, Si. In the step of preparing the support substrate 81, for example, a silicon wafer is prepared as the support substrate 81. The support substrate 81 has a support substrate main surface 81a and a support substrate back surface 81b that face opposite each other in the thickness direction z. The plurality of pillars 82 are formed, for example, by the following steps. First, a seed layer is formed on the support substrate main surface 81a. The seed layer is formed, for example, by sputtering. Then, a resist is patterned on the seed layer, and a plurality of pillars 82 are formed by electrolytic plating. Thereafter, the resist layer and any unnecessary seed layer are removed. Through these steps, a plurality of pillars 82 are formed on the support substrate main surface 81a of the support substrate 81. Note that the specific shape, size, etc. of the pillars 82 are not limited in any way.

[0032] Next, as shown in FIG. 11 , an insulating layer 2 is formed on the support substrate main surface 81a of the support substrate 81 to cover the multiple pillars 82. The insulating layer 2 is made of a synthetic resin, for example, a black epoxy resin as a main component. The insulating layer 2 is formed, for example, by molding. The insulating layer 2 may be made of other insulating resin materials instead of synthetic resin. The insulating layer 2 has an insulating layer main surface 21 and an insulating layer back surface 22 that face opposite each other in the thickness direction z. The insulating layer main surface 21 faces the same direction as the support substrate main surface 81a, and the insulating layer back surface 22 faces the support substrate main surface 81a. When the insulating layer 2 is formed, it completely covers the multiple pillars 82.

[0033] Next, as shown in FIG. 12 , the insulating layer 2 is ground to form a plurality of terminals 31. The insulating layer 2 is ground downward in the thickness direction z from the insulating layer main surface 21 in the state shown in FIG. 11 until the pillars 82 are exposed from the insulating layer main surface 21. The grinding method is not particularly limited. The insulating layer 2 may also be thinned by a method other than grinding. As a result, a plurality of terminals 31 are formed from the plurality of pillars 82. The formed terminals 31 include the above-mentioned ground terminal 31A, corner terminal 31B, and center terminal 31C. In the thickness direction z, the center terminal 31C is positioned so as to overlap with the electronic element.

[0034] Next, as shown in FIG. 13 , the wiring portion 32 is formed. The wiring portion 32 is formed, for example, by the following process. First, the above-mentioned seed layer 3201 is formed on the insulating layer main surface 21 and the terminal portion 31. The seed layer 3201 is formed, for example, by a sputtering method. For example, a Ti (titanium) layer and a Cu (copper) layer are laminated in this order as the seed layer. Next, a resist is patterned on the seed layer 3201, and the above-mentioned plating layer 3202 is formed by electrolytic plating. For example, the plating layer 3202 contains Cu (copper). After that, the resist layer and unnecessary seed layer 3201 (seed layer 3201 exposed from the plating layer 3202) are removed. Through these processes, the wiring portion 32 is formed.

[0035] Next, as shown in FIG. 14 , multiple barrier metals 491 and multiple solder layers 492 are formed in sequence. Each barrier metal 491 contains a metal different from that of the wiring portion 32, such as Ni (nickel). In the process of forming the solder layers 492, for example, a solder paste serving as the solder layers 492 is formed on the corresponding barrier metals 491 by screen printing. The method of forming the barrier metals 491 and the solder layers 492 is not particularly limited, but may be, for example, electrolytic plating. A new seed layer serving as a conductive path may be formed by the electrolytic plating, or the seed layer 3201 formed in the process of forming the wiring portion 32 may be used without removing the seed layer 3201. The barrier metals 491 and the solder layers 492 are each formed in an area where the electronic element 4 is to be bonded.

[0036] 15 , the columnar portion 5 is formed. The columnar portion 5 includes a metal material, such as Cu (copper). The columnar portion 5 is formed by, for example, electrolytic plating. In the electrolytic plating, a seed layer that serves as a conductive path may be newly formed, or the seed layer 3201 formed in the step of forming the wiring portion 32 may be used without removing the seed layer 3201.

[0037] Next, as shown in Fig. 16, the electronic element 4 is placed and bonded. In the step of placing the electronic element 4 as shown in Fig. 15, the multiple electrodes 47 of the electronic element 4 are aligned with the multiple solder layers 492, respectively. Next, reflow is performed with the electronic element 4 placed. The heat from this reflow melts the solder layers 492. Next, the melted solder layers 492 are cooled. This solidifies the solder layers 492, and the electronic element 4 is bonded. As described above, the electronic element 4 is flip-chip mounted with the element main surface 41 facing the wiring portion 32.

[0038] Next, as shown in FIG. 17 , the sealing resin 7 is formed. The sealing resin 7 is formed above the insulating layer 2 so as to cover the electronic element 4, the wiring portion 32, and the columnar portion 5. The sealing resin 7 is formed, for example, by molding. The sealing resin 7 is a synthetic resin whose main component is, for example, a black epoxy resin. Instead of this synthetic resin, the sealing resin 7 may be made of another insulating resin material. The sealing resin 7 has a resin main surface 71 facing upward in the thickness direction z and a resin back surface 72 facing downward in the z direction.

[0039] 18 , the sealing resin 7 may be ground downward in the thickness direction z from the resin main surface 71 until the element back surface 42 and the columnar portion main surface 51 are exposed. The grinding method is not particularly limited. Alternatively, the sealing resin 7 may be thinned by a method other than grinding, such as a chemical method.

[0040] Next, as shown in FIG. 19 , a metal layer 6 is formed. At this time, the metal layer 6 may be formed so as to connect to both the element back surface 42 and the columnar portion main surface 51. The metal layer 6 includes a metal material, such as Cu (copper). The metal layer 6 is formed by, for example, electrolytic plating. The formation of this metal layer 6 is not required.

[0041] Next, the support substrate 81 is removed as shown in Fig. 20. To remove the support substrate 81, for example, in the state shown in Fig. 20, the support substrate 81 is ground from the rear surface 81b side of the support substrate. By continuing the grinding even after the support substrate 81 is removed, the insulating layer 2 and the terminal portion 31 may be thinned.

[0042] 21 , the sealing resin 7 and the insulating layer 2 are cut along the cutting line CL1 from the insulating layer rear surface 22 side to a portion of the sealing resin 7. The sealing resin 7 and the insulating layer 2 are cut by cutting, for example, using a dicing blade. As a result, a groove 83 is formed in a portion of the sealing resin 7 and in the insulating layer 2, as shown in FIG.

[0043] 23, a plurality of conductor films 315 are formed. Each conductor film 315 has a lower conductor film 3152 that contacts the rear surface 312 of the terminal portion described above. Each conductor film 315 may have a side conductor film 3151 that contacts the side surface 313 of the terminal portion described above.

[0044] 24, the sealing resin 7 and the metal layer 6 are cut along the cutting lines CL2. The sealing resin 7 and the metal layer 6 are cut by cutting using, for example, a dicing blade. As a result, the sealing resin 7 and the metal layer 6 are divided along the cutting lines CL2.

[0045] Through the above steps, the electronic device A10 shown in Figures 1 to 9 is manufactured. Note that the manufacturing method of the electronic device A10 is not limited to the above example.

[0046] The functions and effects of the electronic device A10 are as follows.

[0047] In the electronic device A10, the columnar portions 5 protrude upward in the thickness direction z from the conductive portions 3 within the sealing resin 7. This makes it easier for heat transferred from the electronic element 4 to the sealing resin 7 to be transferred to the conductive portions 3 via the columnar portions 5. This allows the heat generated from the electronic element 4 to be more quickly released to the outside. Furthermore, the columnar portion main surfaces 51 are formed so as to penetrate the resin main surface 71 in the thickness direction z. This allows the heat generated from the electronic element 4 to be more quickly released to the outside.

[0048] In the electronic device A10, the metal layer back surface 62 of the metal layer 6 is formed so as to contact the columnar portion main surface 51 and the element back surface 42 in the thickness direction z. This allows heat generated in the electronic element 4 to be dissipated via the metal layer 6, the columnar portion 5, and the wiring portion 32 to, for example, a mounting board (not shown) on which the electronic device A10 is mounted. Therefore, this configuration can further improve the heat dissipation properties of the electronic device A10.

[0049] The columnar portion 5 is electrically connected to the ground terminal portion 31A. The ground line to which the ground terminal portion 31A is connected generally has a large area and is a good place for heat to be transmitted. This can promote heat dissipation from the electronic element 4. In this embodiment, the columnar portion 5 is also electrically connected to the center terminal portion 31C. The center terminal portion 31C has the largest area of ​​the multiple terminal portions 31. This configuration is therefore advantageous for promoting heat dissipation from the electronic element 4.

[0050] The electronic device A10 includes an electronic element 4, an insulating layer 2, and a columnar portion 5. The insulating layer 2 has an insulating layer main surface 21 that supports the electronic element 4. The columnar portion 5 is disposed on the insulating layer main surface 21 (in the direction in which the insulating layer main surface 21 faces the insulating layer 2). In this configuration, the columnar portion 5 functions as an electromagnetic shield, thereby preventing the electronic element 4 from being subjected to external electromagnetic noise. Therefore, this configuration can improve the operational reliability of the electronic device A10.

[0051] 25 to 44 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0052] 25 shows a first modified example of the electronic device A 10. The electronic device A11 of this modified example differs from the electronic device A10 in the configuration of the columnar portion 5.

[0053] In the electronic device A11, the columnar portion 5 is exposed in the x direction from the sealing resin 7. Such a columnar portion 5 is formed by forming a columnar portion 5 that is larger in the x direction than the columnar portion 5 shown in FIG. 15 , for example. For example, the columnar portion 5 is formed so that it overlaps the terminal portion 31 (ground terminal portion 31A in the figure) when viewed in the thickness direction z. Then, in the steps shown in FIGS. 21 and 24 , cutting is performed to remove a portion of the columnar portion 5. In the electronic device A11, the side conductor film 3151 of the conductor film 315 may be formed on a portion of the columnar portion 5.

[0054] This modification also makes it possible to more quickly release heat generated from the electronic element 4 to the outside. Furthermore, as can be seen from this modification, the columnar portion 5 may be exposed from the sealing resin 7 in the x direction or the y direction.

[0055] 26 shows a second modification of the electronic device A 10. The electronic device A12 of this modification differs from the above-described example in the relationship between the electronic element 4 and the metal layer 6.

[0056] In the electronic device A12, a part of the sealing resin 7 is interposed between the element rear surface 42 of the electronic element 4 and the metal layer rear surface 62 of the metal layer 6.

[0057] This modification also makes it possible to more quickly release heat generated from the electronic element 4 to the outside. Furthermore, as can be understood from this modification, the electronic device of the present disclosure is not limited to a configuration in which the electronic element 4 and the metal layer 6 are in contact with each other.

[0058] 27 shows a third modification of the electronic device A 10. The electronic device A13 of this modification does not include the metal layer 6 described above.

[0059] In the electronic device A13, the resin main surface 71 of the sealing resin 7 is exposed upward in the z direction. In the illustrated example, the element back surface 42 of the electronic element 4 and the columnar portion main surface 51 of the columnar portion 5 are covered with the sealing resin 7, but this is not limiting. At least one of the element back surface 42 and the columnar portion main surface 51 may be exposed from the resin main surface 71 of the sealing resin 7.

[0060] This modification also makes it possible to more quickly release heat generated from the electronic element 4 to the outside. Furthermore, as can be understood from this modification, the electronic device of the present disclosure may be configured without including the metal layer 6.

[0061] 28 and 29 show a fourth modified example of the electronic device A 10. The electronic device A 14 of this modified example differs from the above-described example in the configuration of the metal layer 6.

[0062] In the electronic device A14, the metal layer 6 has an uneven portion 65. The uneven portion 65 is formed on the upper side of the metal layer 6 in the z direction. In the example shown, the uneven portion 65 includes a plurality of protrusions 651. Each of the plurality of protrusions 651 protrudes upward in the z direction from the metal layer main surface 61. The size of the uneven portion 65 in the thickness direction z is not limited in any way and is, for example, 3 μm or more and 100 μm or less.

[0063] There is no limitation on the shape and size of the multiple protrusions 651. In this example, the multiple protrusions 651 are each rectangular when viewed in the thickness direction z, but they may be circular, elliptical, polygonal, or the like. There is no limitation on the arrangement of the multiple protrusions 651, and in this example, they are arranged in a matrix along the first direction x and the second direction y.

[0064] The method for forming the uneven portion 65 (plurality of convex portions 651) is not limited in any way. For example, after the step shown in Fig. 19, the uneven portion 65 (plurality of convex portions 651) may be further formed by further performing electrolytic plating or the like. Alternatively, the thickness of the metal layer 6 in Fig. 19 in the thickness direction z may be increased, and the uneven portion 65 (plurality of convex portions 651) may be formed by, for example, etching the metal layer 6.

[0065] This modification also allows heat generated from the electronic element 4 to be dissipated to the outside more quickly. Furthermore, in this modification, an uneven portion 65 is formed on the metal layer 6. This increases the surface area of ​​the metal layer 6 in the thickness direction z. Therefore, this configuration is suitable for improving the heat dissipation of the electronic device A14.

[0066] 30 shows a fifth modification of the electronic device A 10. The electronic device A15 of this modification differs from the electronic device A14 in the configuration of the plurality of protrusions 651.

[0067] In the electronic device A15, the multiple protrusions 651 each extend in the second direction y and reach both ends of the metal layer 6 in the second direction y. The multiple protrusions 651 are parallel to each other and spaced apart from each other in the first direction x.

[0068] This modification also makes it possible to more quickly release the heat generated from the electronic element 4 to the outside. Furthermore, as can be understood from this modification, the specific configuration of the uneven portion 65 (plurality of protrusions 651) is not limited in any way.

[0069] 31 shows a sixth modified example of the electronic device A 10. The electronic device A16 of this modified example differs from the above-described example in the configuration of the plurality of protrusions 651.

[0070] In the electronic device A16, each of the plurality of protrusions 651 has a circular shape when viewed in the thickness direction z. The plurality of protrusions 651 are arranged in a matrix, and the positions of adjacent protrusions 651 in the first direction x in the second direction y are different from each other.

[0071] This modification also makes it possible to more quickly release the heat generated from the electronic element 4 to the outside. Furthermore, as can be understood from this modification, the specific configuration of the uneven portion 65 (plurality of protrusions 651) is not limited in any way.

[0072] 32 to 34 show an electronic device A20 according to the second embodiment. In the electronic device A20, the configuration of the columnar portion 5 is different from that of the above-described embodiment.

[0073] The columnar portion 5 of this embodiment has a tapered portion 54. The tapered portion 54 is connected to the wiring portion 32. The tapered portion 54 is the lower end portion of the columnar portion 5 in the thickness direction z. As shown in FIG. 34 , the cross section of the tapered portion 54 perpendicular to the thickness direction z becomes smaller from the top (first side) to the bottom (second side) in the thickness direction z. In the illustrated example, the size of the tapered portion 54 in the first direction x becomes smaller from the top (first side) to the bottom (second side) in the thickness direction z. The shape of the portion of the columnar portion 5 located above the tapered portion 54 in the thickness direction z is not limited in any way. In the illustrated example, the shape and size of the cross section of this portion perpendicular to the thickness direction z are constant.

[0074] The tapered portion 54 is connected to at least one of the wiring portions 32. In the illustrated example, the tapered portion 54 is connected to the wiring portion 32 that is electrically connected to the ground terminal portion 31A. The conductive portion 3 of the electronic device A20 also includes two ground terminal portions 31D. The two ground terminal portions 31D are arranged on both sides of the multiple ground terminal portions 31A in the second direction y. The tapered portion 54 is also connected to the wiring portions 32 that are electrically connected to the two ground terminal portions 31D.

[0075] 34 , in the illustrated example, the tapered portion 54 penetrates the wiring portion 32 and reaches the terminal portion 31. The specific configuration in which the tapered portion 54 and the wiring portion 32 are connected is not limited in any way, and the tapered portion 54 may reach only the wiring portion 32, or may penetrate the wiring portion 32 and reach the terminal portion 31.

[0076] 32 , the columnar portion 5 traverses the electronic device A20 in the second direction y and reaches both ends in the second direction y. In the illustrated example, the shape and size of the cross section of the columnar portion 5 perpendicular to the second direction y are substantially constant.

[0077] Next, an example of a method for manufacturing the electronic device A20 will be described below with reference to FIGS.

[0078] First, the steps described with reference to Figures 10 to 17 are carried out, except that the formation of the columnar section 5 shown in Figure 15 is not carried out.

[0079] Next, as shown in FIG. 35 , the sealing resin 7 is cut along the cutting line CL3. This cutting is performed by cutting using, for example, a dicing blade. In the illustrated example, a tapered portion is provided on the outer periphery of the dicing blade. The lower end portion of the cutting line CL3 in the thickness direction z corresponds to the shape of this tapered portion. In the illustrated example, the cutting line CL3 penetrates the wiring portion 32 and reaches the terminal portion 31. It is sufficient that the cutting line CL3 reaches the wiring portion 32, and it is not necessary that the cutting line CL3 reaches the terminal portion 31. The cutting along the cutting line CL3 is performed over the entire area in the second direction y.

[0080] 36 is formed by cutting along cutting line CL3. Groove portion 84 opens to resin main surface 71 and is recessed downward in thickness direction z from resin main surface 71. Groove portion 84 reaches wiring portion 32. In the illustrated example, groove portion 84 reaches terminal portion 31.

[0081] Next, the groove 84 is filled with a conductor to form the columnar portion 5 shown in FIG. 37 . The method for filling the groove 84 with the conductor is not limited in any way. For example, a metal layer serving as a seed layer may be formed on the inner surface of the groove 84 by sputtering or the like, and then Cu (copper), an example of a conductor, may be filled into the groove 84 by electrolytic plating or the like. Since the columnar portion 5 is formed corresponding to the shape of the groove 84, in the illustrated example, a tapered portion 54 is formed in the columnar portion 5.

[0082] 38 , the sealing resin 7 and the columnar portion 5 are cut from above in the thickness direction z, thereby exposing the element rear surface 42 from the resin main surface 71.

[0083] Next, a metal layer 6 is formed as shown in Fig. 39. Although the support substrate 81 shown in Figs. 10 to 19 is not shown in Figs. 35 to 39, the manufacturing method may use the support substrate 81 in the same manner as in the steps shown in Figs.

[0084] Next, the substrate 1 and a portion of the sealing resin 7 are cut along the cutting line CL1 shown in Fig. 39. Next, as shown in Fig. 40, for example, a conductor film 315 is formed and cut along the cutting line CL2. By going through the above steps, the electronic device A20 is obtained.

[0085] This embodiment also makes it possible to more quickly dissipate heat generated from the electronic element 4 to the outside. Furthermore, grooves 84 shown in Fig. 36 are formed by cutting as shown in Fig. 35, and the columnar portions 5 are formed by filling the grooves 84 with a conductor. This method makes it possible to form relatively large columnar portions 5 at desired positions, which is advantageous for improving heat dissipation.

[0086] The tapered portion 54 is connected to the wiring portion 32, so that heat can be transferred more reliably between the columnar portion 5 and the conductive portion 3. Furthermore, a configuration in which the tapered portion 54 penetrates the wiring portion 32 and reaches the terminal portion 31 is preferable for promoting heat transfer.

[0087] 41 shows a first modified example of the electronic device A20. The electronic device A21 of this modified example differs from the above-described example in the configuration of the electronic element 4 and the columnar portion 5.

[0088] In the electronic device A21, the element side surface 43 of the electronic element 4 and the columnar portion side surface 53 of the columnar portion 5 are in contact with each other. No sealing resin 7 is interposed between the element side surface 43 and the columnar portion side surface 53. The element back surface 42 and the columnar portion main surface 51 are connected to each other so as to be flush with each other.

[0089] 42 to 44 show an example of a method for manufacturing the electronic device A21. As shown in Fig. 42, cutting is performed along cutting lines CL3. In this embodiment, the cutting lines CL3 overlap the sealing resin 7 and the electronic elements 4.

[0090] 43 is formed by cutting along the cutting line CL3. A portion of the electronic element 4 is cut away by cutting along the cutting line CL3. In this cutting, for example, a portion that avoids a functional portion that performs an electrical function of the electronic element 4 is cut away. As a result, the element side surface 43 is exposed in the groove 84 of the electronic element 4.

[0091] 44, the grooves 84 are filled with a conductor to form the columnar portions 5. Thereafter, the electronic device A21 is obtained through the steps shown in FIGS.

[0092] This embodiment also makes it possible to more quickly dissipate heat generated from the electronic element 4 to the outside. Furthermore, since the electronic element 4 is in contact with the columnar portion 5, heat from the electronic element 4 is more efficiently transferred to the columnar portion 5. This is advantageous for improving the heat dissipation performance of the electronic device A21.

[0093] The electronic device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the electronic device according to the present invention can be freely designed and modified in various ways.

[0094] Supplementary Note 1. An electronic device comprising: a substrate having an insulating layer having an insulating layer main surface facing a first side in a thickness direction and an insulating layer back surface facing a second side opposite to the insulating layer main surface, and conductive portions exposed from the insulating layer main surface and the insulating layer back surface, an electronic element having an element main surface facing the insulating layer main surface in the thickness direction and a plurality of electrodes arranged on the element main surface, the plurality of electrodes being electrically connected to the conductive portions, a conductive columnar portion protruding from the conductive portion to the first side in the thickness direction in the thickness direction, and a sealing resin covering the insulating layer main surface, the electronic element, and the columnar portion. Supplementary Note 2. The electronic device according to Supplementary Note 1, wherein the element main surface has an element back surface facing the first side in the thickness direction, and the columnar portion is formed in the thickness direction beyond the element back surface to the first side. Supplementary Note 3. The electronic device according to Supplementary Note 1 or 2, wherein the columnar portion has a columnar portion side surface extending in the thickness direction, the element body has an element side surface extending in the thickness direction, and the columnar portion side surface and the element side surface are in contact with each other at least in part. Supplementary Note 4. The electronic device according to any one of Supplementary Note 1 to 3, wherein the element body has an element back surface facing the first side in the thickness direction, and the electronic element has a metal layer disposed on the element back surface. Supplementary Note 5. The electronic device according to Supplementary Note 4, wherein the metal layer is connected to the columnar portion. Supplementary Note 6. The electronic device according to Supplementary Note 4 or 5, comprising an insulating film stacked on the first side in the thickness direction of the metal layer. Supplementary Note 7. The electronic device according to Supplementary Note 1, wherein the conductive portion includes: a terminal portion having a terminal back surface exposed from the back surface of the insulating layer; and a wiring portion exposed from the main surface of the insulating layer and connecting the terminal portion and at least one of the plurality of electrodes. Supplementary Note 8. Supplementary Note 7: The electronic device according to Supplementary Note 7, wherein, when viewed in the thickness direction, the electronic element at least partially overlaps with the terminal portion. Supplementary Note 9: The electronic device according to Supplementary Note 7, wherein a metal film is formed on at least a portion of the terminal portion. Supplementary Note 10: The electronic device according to any one of Supplementary Notes 7 to 9, wherein the columnar portion has a tapered portion connected to the wiring portion, and a cross section of the tapered portion perpendicular to the thickness direction becomes smaller from the first side to the second side in the thickness direction.Appendix 11. The electronic device according to Appendix 4 or 5, wherein the metal layer has a concave-convex portion formed on the first side in the thickness direction. Appendix 12. The electronic device according to Appendix 11, wherein the concave-convex portion has a plurality of convex portions aligned in a first direction perpendicular to the thickness direction when viewed in the thickness direction. Appendix 13. The electronic device according to Appendix 11, wherein the plurality of convex portions are arranged in a matrix when viewed in the thickness direction. Appendix 14. The electronic device according to any one of Appendix 11 to Appendix 13, wherein the concave-convex portion has a thickness of 3 μm to 100 μm. Appendix 15. The electronic device according to Appendix 7, wherein the conductive portion includes a plurality of the terminal portions, the plurality of terminal portions including a ground terminal portion for ground connection, and the columnar portion is electrically connected to the ground terminal portion. Appendix 16. The electronic device according to Supplementary Note 7 or 15, wherein the insulating layer is rectangular when viewed in the thickness direction, the conductive portion includes a plurality of the terminal portions, the plurality of terminal portions include a plurality of corner terminal portions arranged at four corners of the insulating layer, and the columnar portion is electrically connected to at least one of the corner terminal portions. Supplementary Note 17. The electronic device according to Supplementary Note 4, wherein the metal layer includes copper. Supplementary Note 18. The electronic device according to Supplementary Note 1, wherein the conductive portion includes copper. Supplementary Note 19. A method for manufacturing an electronic device, comprising: preparing a substrate having an insulating layer and a conductive portion; forming a conductive columnar portion protruding from the conductive portion to a first side in the thickness direction; mounting an electronic element on the substrate; and forming a sealing resin covering the electronic element and the columnar portion. Supplementary Note 20. 1. A method for manufacturing an electronic device, comprising: a step of preparing a substrate having an insulating layer and a conductive portion; a step of mounting an electronic element on a first side in a thickness direction of the substrate; a step of forming a sealing resin that covers the electronic element; a step of partially removing the sealing resin to form a recess that opens to the one side in the thickness direction and reaches the conductive portion; and a step of filling a conductor in the recess to form a columnar portion that protrudes from the conductive portion to the first side in the thickness direction.Appendix 21. The method for manufacturing an electronic device according to Appendix 20, wherein in the step of forming the recess, the recess is formed across both the electronic element and the sealing resin by removing a part of the sealing resin and a part of the electronic element, and in the step of forming the columnar portion, the conductor is filled in the recess so that the conductor is in contact with the sealing resin and the electronic element.

[0095] A10 to A16, A20, A21: Electronic device 1: Substrate 2: Insulating layer 3: Conductive portion 4: Electronic element 5: Column portion 6: Metal layer 7: Sealing resin 21: Insulating layer main surface 22: Insulating layer back surface 23: Insulating layer side surface 24: Insulating layer side surface 31: Terminal portion 31A: Ground terminal portion 31B: Corner terminal portion 31C: Center terminal portion 31D: Ground terminal portion 32: Wiring portion 40: Element body 41: Element main surface 42: Element back surface 43: Element side surface 47: Electrode 49: Joint portion 51: Column portion main surface 52: Column portion back surface 53: Column portion side surface 54: Tapered portion 61: Metal layer main surface 62: Metal layer back surface 63: Metal layer side surface 65: Concave and recessed portion 71: Resin main surface 72: Resin back surface 73: Resin side surface 81: Support substrate 81a: Main surface of support substrate 81b: Back surface of support substrate 82: Pillar 83, 84: Groove 311: Main surface of terminal portion 312: Back surface of terminal portion 313: Side surface of terminal portion 315: Conductive film 321: Main surface of wiring portion 322: Back surface of wiring portion 491: Barrier metal 492: Solder layer 651: Convex portion 3151: Side conductive film 3152: Lower conductive film 3201: Seed layer 3202: Plating layer CL1, CL2, CL3: Cutting line x: First direction y: Second direction z: Thickness direction

Claims

1. An electronic device comprising: a substrate having an insulating layer having an insulating layer main surface facing a first side in a thickness direction and an insulating layer back surface facing a second side opposite the insulating layer main surface; and conductive portions exposed from the insulating layer main surface and the insulating layer back surface; an electronic element having an element body including an element main surface facing the insulating layer main surface in the thickness direction and a plurality of electrodes arranged on the element main surface, the plurality of electrodes being electrically joined to the conductive portions; a columnar portion having conductivity and protruding from the conductive portion to the first side in the thickness direction in the thickness direction; and a sealing resin covering the insulating layer main surface, the electronic element, and the columnar portion.

2. The electronic device according to claim 1, wherein the element body has a back surface of the element facing the first side in the thickness direction, and the columnar portion is formed in the thickness direction beyond the back surface of the element to the first side.

3. The electronic device according to claim 1 or 2, wherein the columnar portion has a columnar side surface extending in the thickness direction, the element body has an element side surface extending in the thickness direction, and the columnar side surface and the element side surface are in contact at least in part.

4. The electronic device according to claim 1, wherein the element body has a rear surface facing the first side in the thickness direction, and the electronic element has a metal layer disposed on the rear surface.

5. The electronic device according to claim 4, wherein the metal layer is connected to the columnar portion.

6. The electronic device according to claim 4 or 5, further comprising an insulating film laminated on the first side in the thickness direction of the metal layer.

7. The electronic device according to claim 1, wherein the conductive portion includes: a terminal portion having a terminal back surface exposed from the back surface of the insulating layer; and a wiring portion exposed from the main surface of the insulating layer and connecting the terminal portion and at least one of the plurality of electrodes.

8. The electronic device according to claim 7, wherein, when viewed in the thickness direction, the electronic element at least partially overlaps with the terminal portion.

9. The electronic device according to claim 7, wherein a metal film is formed on at least a portion of said terminal portion.

10. An electronic device as described in any one of claims 7 to 9, wherein the columnar portion has a tapered portion connected to the wiring portion, and the tapered portion has a cross-section perpendicular to the thickness direction that becomes smaller in the thickness direction from the first side to the second side.

11. The electronic device according to claim 4 or 5, wherein the metal layer has an uneven portion formed on the first side in the thickness direction.

12. The electronic device according to claim 11, wherein the concave-convex portion has a plurality of convex portions aligned in a first direction perpendicular to the thickness direction when viewed in the thickness direction.

13. The electronic device according to claim 11, wherein the plurality of protrusions are arranged in a matrix when viewed in the thickness direction.

14. The electronic device according to any one of claims 11 to 13, wherein the thickness of the concave and convex portion is 3 μm or more and 100 μm or less.

15. The electronic device according to claim 7, wherein the conductive portion includes a plurality of the terminal portions, the plurality of terminal portions including a ground terminal portion for ground connection, and the columnar portion is electrically connected to the ground terminal portion.

16. The electronic device described in claim 15, wherein the insulating layer is rectangular when viewed in the thickness direction, the conductive portion includes a plurality of the terminal portions, the plurality of terminal portions include a plurality of corner terminal portions arranged at four corners of the insulating layer, and the columnar portion is electrically conductive with at least one of the plurality of corner terminal portions.

17. The electronic device of claim 4, wherein the metal layer comprises copper.

18. The electronic device of claim 1, wherein the conductive portion comprises copper.

19. A method for manufacturing an electronic device, comprising the steps of: preparing a substrate having an insulating layer and a conductive portion; forming a conductive columnar portion protruding from the conductive portion to a first side in the thickness direction; mounting an electronic element on the substrate; and forming a sealing resin covering the electronic element and the columnar portion.

20. A method for manufacturing an electronic device, comprising the steps of: preparing a substrate having an insulating layer and a conductive portion; mounting an electronic element on a first side in a thickness direction of the substrate; forming an encapsulating resin covering the electronic element; partially removing the encapsulating resin to form a recess that opens to the one side in the thickness direction and reaches the conductive portion; and filling the recess with a conductor to form a columnar portion protruding from the conductive portion to the first side in the thickness direction.

21. A method for manufacturing an electronic device as described in claim 20, wherein in the step of forming the recess, a portion of the sealing resin and a portion of the electronic element are removed to form the recess covering both the electronic element and the sealing resin, and in the step of forming the columnar portion, the recess is filled with the conductor so that the conductor is in contact with the sealing resin and the electronic element.

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