Method for laser heat processing of wafer structure and semiconductor element manufacturing method employing same

Abstract

Disclosed are a method for laser heat processing of a wafer structure and a semiconductor element manufacturing method employing same. The disclosed method for laser heat processing of a wafer structure may comprise the steps of: preparing a wafer structure having a substantially circular structure or at least a partially circular structure; masking the peripheral region of the wafer structure while exposing one surface portion of the wafer structure by using a mask member defining an opening region for exposing the one surface portion of the wafer structure; and performing heat processing of the wafer structure by emitting a line-type laser beam forming a laser line, which has a length greater than or equal to the diameter of the wafer structure and crosses the wafer structure, onto the one surface portion of the wafer structure exposed through the opening region of the mask member.

Description

Laser heat treatment method for wafer structures and method for manufacturing semiconductor devices using the same

[0001] The present invention relates to a heat treatment method for a workpiece and a method for manufacturing a device using the same, and more particularly, to a laser heat treatment method for a wafer structure and a method for manufacturing a semiconductor device using the same.

[0002] In general, semiconductor devices / electronic devices can be manufactured through multiple processes. For example, processes for manufacturing semiconductor devices / electronic devices can include thin film deposition processes, photolithography processes, etching processes, ion implantation processes, heat treatment (i.e., annealing) processes, etc. Among these, the heat treatment process can be a process for improving and securing the characteristics of the device by stabilizing, activating, melting a substrate or a thin film formed on the substrate, or removing seam defects within the thin film. The heat treatment (annealing) process can include a laser heat treatment process, a rapid thermal process (RTP), etc.

[0003] Laser heat treatment processes utilize lasers to primarily heat-treat the substrate surface or adjacent areas, thus minimizing the impact on other processes, minimizing thermal damage, and facilitating temperature increase and control. However, as the integration of semiconductor and electronic devices increases, unit device sizes continue to shrink, and processes become more sophisticated, temperature non-uniformity across the substrate during laser heat treatment can cause various problems in device manufacturing characteristics.

[0004] Furthermore, in conventional laser heat treatment processes, in order to irradiate a laser to a specific shot area using a stepper method, uniform laser energy must be secured over a relatively wide range appropriate to the size of the shot area. This necessitates the application of complex optical systems. Applying complex optical systems not only increases equipment costs but can also be disadvantageous in terms of equipment maintenance and management. Furthermore, conventional laser heat treatment processes using a stepper method have the disadvantage of low productivity.

[0005] The technical problem to be achieved by the present invention is to provide a laser heat treatment method that can prevent problems such as temperature unevenness during heat treatment using a laser and improve productivity.

[0006] In addition, the technical problem to be achieved by the present invention is to provide a method for manufacturing a semiconductor device (electronic device) using the above-described laser heat treatment method.

[0007] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be understood by those skilled in the art from the description below.

[0008] According to one embodiment of the present invention, a method for laser heat treatment of a wafer structure is provided, comprising the steps of: providing a wafer structure having a substantially circular structure or at least a partially circular structure; masking a peripheral area of ​​the wafer structure while exposing one side of the wafer structure using a mask member defining an opening area for exposing one side of the wafer structure; and performing a heat treatment on the wafer structure by irradiating a line-shaped laser beam, which forms a laser line crossing the wafer structure and has a length greater than or equal to a diameter of the wafer structure, to the one side of the wafer structure exposed by the opening area of ​​the mask member.

[0009] In the step of performing heat treatment on the above wafer structure, the line-shaped laser beam can be irradiated to one surface of the wafer structure in a scanning manner while changing the relative position between the wafer structure and the line-shaped laser beam.

[0010] The step of performing heat treatment on the above wafer structure can be performed while moving the stage on which the wafer structure is placed.

[0011] The step of performing heat treatment on the above wafer structure can be performed by moving the irradiation position of the line-shaped laser beam without moving the stage on which the wafer structure is placed.

[0012] The opening area of ​​the mask member may have a diameter equal to or smaller than the diameter of the wafer structure.

[0013] When the opening area of ​​the mask member has a diameter smaller than the diameter of the wafer structure, the difference between the diameter of the opening area and the wafer structure may be about 5 mm or less.

[0014] The mask member may be designed to mask a peripheral area of ​​the wafer structure and an edge area of ​​one side of the wafer structure.

[0015] The above line-shaped laser beam may have a line width in the range of about 1 μm to 500 μm.

[0016] The above line-shaped laser beam may include any one of ultraviolet ray, visible ray, infrared ray, and microwave.

[0017] The above wafer structure may include a semiconductor film or an insulating film, and the heat treatment using the line-shaped laser beam may be performed to change the crystallinity, physical properties, or film quality of the semiconductor film or the insulating film.

[0018] Before performing heat treatment using the line-shaped laser beam, the wafer structure may have an initial temperature of about 550°C or less, and the heating temperature of the wafer structure by irradiation with the line-shaped laser beam may be in the range of about 200 to 3000°C.

[0019] According to another embodiment of the present invention, a method for manufacturing a semiconductor device is provided, comprising the steps of heat-treating a wafer structure using the aforementioned laser heat treatment method; and forming a semiconductor device from the heat-treated wafer structure.

[0020] According to embodiments of the present invention, a laser heat treatment method can be implemented that can prevent problems such as temperature unevenness during heat treatment using a laser and improve productivity.

[0021] By applying the laser heat treatment method according to embodiments of the present invention, it may be possible to manufacture semiconductor devices (electronic devices) having excellent performance and uniformity.

[0022] However, the effects of the present invention are not limited to the above effects, and can be expanded in various ways without departing from the technical spirit and scope of the present invention.

[0023] FIG. 1 is a flowchart for explaining a laser heat treatment method for a wafer structure according to one embodiment of the present invention.

[0024] FIGS. 2A to 2C are plan views illustrating a laser heat treatment method for a wafer structure according to one embodiment of the present invention.

[0025] FIG. 3 is a cross-sectional view exemplarily showing the positional relationship between a wafer structure and a mask member in a laser heat treatment method according to one embodiment of the present invention.

[0026] FIGS. 4A to 4C are plan views illustrating a laser heat treatment method for a wafer structure according to another embodiment of the present invention.

[0027] FIGS. 5A to 5C are plan views illustrating a laser heat treatment method for a wafer structure according to the first comparative example.

[0028] Figure 6 is a plan view for explaining a laser heat treatment method for a wafer structure according to the second comparative example.

[0029] FIG. 7 is a perspective view illustrating a method for manufacturing a semiconductor device by applying a laser heat treatment method to a wafer structure according to an embodiment of the present invention.

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0031] The embodiments of the present invention described below are provided to more clearly explain the present invention to a person having ordinary skill in the art, and the scope of the present invention is not limited by the following embodiments, and the following embodiments can be modified in various other forms.

[0032] The terminology used herein is used to describe particular embodiments and is not intended to limit the present invention. The singular forms used herein may include the plural forms unless the context clearly dictates otherwise. In addition, the terms "comprise" and / or "comprising" used herein specify the presence of a stated feature, step, number, operation, element, element, and / or group thereof, but do not exclude the presence or addition of one or more other features, steps, numbers, operations, elements, elements, and / or groups thereof. In addition, the term "connected" used herein not only means that certain elements are directly connected, but also includes a concept that indirectly connects elements by interposing another element between them.

[0033] In addition, when it is said in this specification that a certain element is located "on" another element, this includes not only cases where a certain element is in contact with another element, but also cases where another element exists between the two elements. The term "and / or" as used in this specification includes any one of the listed items and any and all combinations of one or more of them. In addition, terms of degree such as "about", "substantially", etc. as used in this specification are used to mean a range of or close to the numerical value or degree, taking into account inherent manufacturing and material tolerances, and are used to prevent infringers from unfairly using the disclosure that mentions exact or absolute numbers provided to help the understanding of this specification.

[0034] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The sizes and thicknesses of areas or parts illustrated in the attached drawings may be somewhat exaggerated for clarity and convenience of explanation. Like reference numbers designate like components throughout the detailed description.

[0035] FIG. 1 is a flowchart for explaining a laser heat treatment method for a wafer structure according to one embodiment of the present invention.

[0036] Referring to FIG. 1, a laser heat treatment method for a wafer structure according to an embodiment of the present invention may include a step (S10) of preparing a wafer structure having a substantially circular structure or at least a partially circular structure, a step (S20) of masking a peripheral area of ​​the wafer structure while exposing one side of the wafer structure using a mask member defining an opening area for exposing one side of the wafer structure, and a step (S30) of performing heat treatment (i.e., laser heat treatment / annealing) on ​​the wafer structure by irradiating a line-shaped laser beam, which forms a laser line crossing the wafer structure and has a length greater than or equal to a diameter of the wafer structure, to the one side of the wafer structure exposed by the opening area of ​​the mask member. The line-shaped laser beam may form a laser line having a length greater than or equal to a diameter of the wafer structure in and around an area where it meets the wafer structure. The above-mentioned line-shaped laser beam may have a planar shape overall, but may form a laser line in an area where it meets the wafer structure, and therefore, in this respect, it may be referred to as a 'line-shaped beam' or 'line beam'.

[0037] The wafer structure may have a substantially circular structure or at least a partially circular structure. The wafer structure may be a circular plate, and may include a notch formed on a portion of a side surface thereof or may include a flat zone. In this case, the wafer structure may have a circular structure in the remaining area excluding the notch or the flat zone. The wafer structure may have, for example, a diameter of 50 mm or more. The wafer structure may have a diameter of 200 mm or more or a diameter of 300 mm or more.

[0038] The wafer structure may include a semiconductor, an insulator, or a conductor. The wafer structure may include at least one of a semiconductor, an insulator, and a conductor. In addition, the wafer structure may include a device portion including a predetermined thin film or thin films formed on the wafer. When the wafer structure includes a semiconductor wafer, the semiconductor wafer may include at least one of various semiconductor materials, including but not limited to Si, Ge, SiGe, SiC, GaN, GaAs, etc. The thin film may include at least one of a semiconductor thin film, an insulator thin film, and a conductive thin film. The semiconductor thin film may include various semiconductor materials including amorphous silicon and polycrystalline silicon. The insulator thin film may include a high-k material having a higher permittivity than silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride. The conductive thin film may include at least one of a metal and a metal compound, for example. The device portion may include, but not limited to, a switching element such as a transistor or a diode, or a memory element such as a storage node, a capacitor, or a resistance change layer.

[0039] When the above wafer structure includes a semiconductor film (semiconductor thin film) or an insulator film (insulator thin film), the heat treatment using the line-shaped laser beam may be performed to change the crystallinity, physical properties, or film quality of the semiconductor film or the insulator film. As a non-limiting example, the heat treatment using the line-shaped laser beam may be performed to crystallize amorphous silicon, to remove defects such as seams within the thin film, to activate a doped region, or to stabilize the wafer (substrate) or thin film. In addition, the heat treatment using the line-shaped laser beam may be performed for various purposes.

[0040] In step S20, the mask member defining an opening area for exposing one side of the wafer structure can be used to expose one side of the wafer structure while masking a surrounding area of ​​the wafer structure. A heater or a guard ring for heating the wafer structure may be present around the wafer structure, and the mask member can prevent the heater or the guard ring from being exposed to the linear laser beam by covering (i.e., masking) the heater or the guard ring.

[0041] In one embodiment, the mask member may be designed to mask a peripheral area of ​​the wafer structure and an edge area of ​​one side of the wafer structure. In other words, in step S20, the edge area of ​​one side of the wafer structure may be masked while the peripheral area of ​​the wafer structure is masked using the mask member. In this case, the width of the edge area may be, for example, about 2.5 mm or less. The edge area may be an invalid area. By masking up to the edge area with the mask member, a tolerance can be secured, and laser heat treatment can be effectively performed on an valid area inside the edge area (i.e., an valid area of ​​the wafer structure).

[0042] In step S30, heat treatment can be performed on the wafer structure by irradiating the line-shaped laser beam, which forms a laser line crossing the wafer structure and has a length greater than or equal to the diameter of the wafer structure, to one surface of the wafer structure exposed by the opening area of ​​the mask member. The length of the line-shaped laser beam can be greater than or equal to the diameter of the wafer structure. In other words, the length of the laser line can be greater than or equal to the diameter of the wafer structure. The length of the line-shaped laser beam (or the laser line) can be, for example, about 50 mm or more. The length of the line-shaped laser beam (or the laser line) can be about 200 mm or more or about 300 mm or more.

[0043] In step S30, the line-shaped laser beam can be irradiated to one surface of the wafer structure in a scanning manner while changing the relative position between the wafer structure and the line-shaped laser beam. Accordingly, the laser heat treatment method can be performed on the entire effective area of ​​the one surface of the wafer structure.

[0044] In one embodiment, step S30 may be performed while moving a stage on which the wafer structure is placed. In this case, as the stage is moved, the wafer structure and the mask member may move together.

[0045] According to another embodiment, step S30 can be performed while moving the irradiation position of the line-shaped laser beam without moving the stage on which the wafer structure is placed. That is, a scan operation can be performed to move the irradiation position of the line-shaped laser beam by controlling the optical system without moving the wafer structure and the mask member.

[0046] FIGS. 2A to 2C are plan views illustrating a laser heat treatment method for a wafer structure according to one embodiment of the present invention.

[0047] Referring to FIG. 2A, a laser heat treatment method for a wafer structure according to an embodiment of the present invention may include a step of preparing a wafer structure (W10) having a substantially circular structure or at least a partially circular structure, a step of masking a peripheral area of ​​the wafer structure (W10) while exposing one side of the wafer structure (W10) using a mask member (M10) defining an opening area (H1) for exposing one side of the wafer structure (W10), and a step of performing heat treatment on the wafer structure (W10) by irradiating the one side of the wafer structure (W10) exposed by the opening area (H1) of the mask member (M10) with a line-shaped laser beam (L1) that forms a laser line crossing the wafer structure (W10) and has a length greater than or equal to a diameter of the wafer structure (W10).

[0048] The opening area (H1) of the mask member (M10) may have a substantially circular structure or at least a partially circular structure. The opening area (H1) may have a shape identical to or similar to that of the wafer structure (W10), and may have a size (diameter) identical to or smaller than that of the wafer structure (W10). The center of the opening area (H1) and the center of the wafer structure (W10) may be arranged on the same vertical line. When the opening area (H1) has a diameter smaller than that of the wafer structure (W10), the difference in diameter between the opening area (H1) and the wafer structure (W10) may be about 5 mm or less.

[0049] According to one embodiment, the mask member (M10) can be designed and arranged to mask a peripheral area of ​​the wafer structure (W10) and an edge area of ​​one surface (e.g., an upper surface) of the wafer structure (W10). In other words, the edge area of ​​one surface of the wafer structure (W10) can be masked while masking the peripheral area of ​​the wafer structure (W10) using the mask member (M10). In this case, the width of the edge area can be, for example, about 2.5 mm or less. The edge area can be an invalid area. By masking up to the edge area with the mask member (M10), a tolerance can be secured, and laser heat treatment can be effectively performed on the valid area inside the edge area.

[0050] Referring to FIGS. 2b and 2c, a line-shaped laser beam (L1) can be irradiated to one surface of the wafer structure (W10) in a scanning manner while changing the relative position between the wafer structure (W10) and the line-shaped laser beam (L1). Scanning can be performed from one end of the one surface of the wafer structure (W10) to the other end. Accordingly, the entire effective area of ​​the one surface of the wafer structure (W10) can be heat-treated. According to one embodiment, the step of performing heat treatment on the wafer structure (W10) can be performed while moving the stage on which the wafer structure (W10) is placed. In this case, the wafer structure (W10) and the mask member (M10) can move together as the stage is moved. In FIGS. 2b and 2c, the area indicated in red on the wafer structure (W10) represents an area heat-treated by the laser.

[0051] According to one embodiment of the present invention, the line-shaped laser beam (L1) may have a line width in a range of, for example, about 1 μm to 500 μm. The line-shaped laser beam (L1) may be, for example, any one of ultraviolet (e.g., EUV, DUV, UV), visible ray, infrared (IR), and microwave. The wavelength of the line-shaped laser beam (L1) may be, for example, about 0.01 μm to 11 μm. In addition, the line-shaped laser beam (L1) may be a CW (continuous wave) laser that is continuously ON while the process is in progress. However, the specific type and wavelength range of the line-shaped laser beam (L1) are exemplary and may vary depending on the case.

[0052] In addition, according to one embodiment of the present invention, before performing heat treatment using a line-shaped laser beam (L1), the wafer structure (W10) may have an initial temperature of, for example, about 550°C or less, and the heating temperature of a corresponding region (a region irradiated with laser) of the wafer structure (W10) due to irradiation with the line-shaped laser beam (L1) may be, for example, in a range of about 200 to 3000°C. However, the above-described temperature conditions are exemplary and may vary depending on the case.

[0053] FIG. 3 is a cross-sectional view exemplarily showing the positional relationship between a wafer structure (W10) and a mask member (M10) in a laser heat treatment method according to one embodiment of the present invention.

[0054] Referring to FIG. 3, the mask member (M10) may have an opening area (H1) for exposing one side of the wafer structure (W10), and may be positioned to mask a peripheral area of ​​the wafer structure (W10) while exposing the one side of the wafer structure (W10) through the opening area (H1). According to one embodiment, the mask member (M10) may be designed and positioned to mask the peripheral area of ​​the wafer structure (W10) and an edge area of ​​one side (e.g., an upper surface) of the wafer structure (W10). In other words, the edge area of ​​one side of the wafer structure (W10) may be masked while using the mask member (M10) to mask the peripheral area of ​​the wafer structure (W10). The lower surface of the mask member (M10) may be somewhat spaced apart from the one side (e.g., an upper surface) of the wafer structure (W10), but in some cases, may be in contact with it.

[0055] FIGS. 4A to 4C are plan views illustrating a laser heat treatment method for a wafer structure according to another embodiment of the present invention.

[0056] Referring to FIGS. 4a to 4c, the step of performing heat treatment on the wafer structure (W10) in the present embodiment can be performed by moving the irradiation position of the line-shaped laser beam (L1) without moving the stage on which the wafer structure (W10) is placed. That is, by performing a scan operation of moving the irradiation position of the line-shaped laser beam (L1) by controlling the optical system without moving the wafer structure (W10) and the mask member (M10), heat treatment can be performed on the entire effective area of ​​one surface of the wafer structure (W10). The area indicated in red on the wafer structure (W10) in FIGS. 4b and 4c represents an area heat-treated by the laser.

[0057] In the embodiments of FIGS. 4a to 4c, the remaining features, except for moving the irradiation position of the line-shaped laser beam (L1) instead of the stage, may be the same as those described with reference to FIGS. 2a to 2c.

[0058] By using the laser heat treatment method for a wafer structure according to the embodiments described with reference to FIGS. 1 to 4c, problems such as temperature unevenness during heat treatment using a laser can be prevented and productivity can be improved. In particular, since the line-shaped laser beam (L1) can be irradiated and heat treated over the entire effective area of ​​the wafer structure (W10) with a single scan, problems such as temperature unevenness can be prevented and the effect of improved productivity can be obtained.

[0059] FIGS. 5A to 5C are plan views illustrating a laser heat treatment method for a wafer structure according to the first comparative example.

[0060] Referring to FIGS. 5A to 5C, in the laser heat treatment method according to the first comparative example, after performing the first laser heat treatment (i.e., laser shot) on one area (the first unit area) of the wafer structure (W1), the method may move to the second unit area adjacent to the first unit area and perform the laser heat treatment (i.e., laser shot) on the second unit area. While moving to the next area (unit area) adjacent to the previous laser heat treatment area, the laser heat treatment may be performed on the entire area of ​​the wafer structure (W1) in a shot manner. Starting from the lower left edge of the wafer structure (W1) in the drawing, the laser heat treatment may be performed by repeating the movement and alignment. In this way, when the nth laser heat treatment area and the n+1th laser heat treatment area are adjacent to each other, since the wafer temperature conditions of the adjacent areas change during the heat treatment of the nth laser heat treatment area, the nth laser heat treatment area and the n+1th laser heat treatment area may not be heat treated under the same temperature conditions. In this regard, the peak temperature in the nth laser heat treatment region may differ from the peak temperature in the n+1st laser heat treatment region. Furthermore, temperature deviations may also occur within the n+1st laser heat treatment region. This temperature non-uniformity can ultimately lead to non-uniformity and deterioration of device characteristics. Furthermore, laser heat treatment using a shot method can significantly reduce productivity.

[0061] Figure 6 is a plan view for explaining a laser heat treatment method for a wafer structure according to the second comparative example.

[0062] Referring to FIG. 6, in the laser heat treatment method according to the second comparative example, after performing a first laser scan on one line area (the first line area) of the wafer structure (W1), a laser scan can be performed on the second line area adjacent to the first line area. While moving to the next area adjacent to the previous laser scan area, laser heat treatment can be performed on the entire area of ​​the wafer structure (W1) according to the scanning method. Starting from the upper area of ​​the wafer structure (W1) in the drawing, the laser scan can be performed while repeating movement and alignment. The red arrow indicates the scan direction of the area where the laser heat treatment is performed, and the number written on the left side of the arrow is the laser scan order.

[0063] In the laser heat treatment method according to the second comparative example, a spot laser beam, i.e., a spot beam, is used. The spot laser beam forms a single laser spot in an area where it meets the wafer structure (W1). The laser spot may be circular or nearly circular, and may have a relatively small size.

[0064] When performing laser annealing as in the second comparative example, there is a high possibility that the lower side of the wafer structure (W1) may be undesirably overheated or that undesirable temperature unevenness may occur on the upper side of the wafer structure (W1) (i.e., the upper surface to which the laser beam is irradiated). In particular, when the lower side of the wafer structure (W1) is overheated, elements such as transistors or diodes formed in advance on the lower side may be damaged by heat or their performance may deteriorate. As a result, problems such as deterioration in the characteristics of elements to be ultimately manufactured from the wafer structure (W1) and an increase in the defect rate may occur.

[0065] A method for manufacturing a semiconductor device (electronic device) according to an embodiment of the present invention may include a step of heat-treating a wafer structure using a laser heat treatment method according to the embodiments described above, and a step of forming a semiconductor device (electronic device) from the heat-treated wafer structure. The step of forming the semiconductor device (electronic device) from the heat-treated wafer structure may include, for example, a step of performing a finishing process on the wafer structure, a step of dicing the wafer structure to form a plurality of device portions, and a step of packaging the plurality of device portions. Since the above-described finishing process, dicing process, packaging process, etc. may be well known, a detailed description thereof will be omitted.

[0066] FIG. 7 is a perspective view illustrating a method for manufacturing a semiconductor device by applying a laser heat treatment method to a wafer structure according to an embodiment of the present invention.

[0067] Referring to FIG. 7, a plurality of elements (D10) can be formed from a heat-treated wafer structure (W100). The plurality of elements (D10) may be semiconductor elements (electronic elements). The elements (D10) may be memory elements or non-memory elements. In addition, the semiconductor elements may not be display elements.

[0068] According to the embodiments of the present invention described above, a laser heat treatment method can be implemented that can prevent problems such as temperature unevenness during heat treatment using a laser and improve productivity. By applying the laser heat treatment method according to the embodiments of the present invention, it is possible to manufacture semiconductor devices (electronic devices) with excellent performance and uniformity.

[0069] In this specification, preferred embodiments of the present invention have been disclosed, and although specific terms have been used, they have been used in a general sense only to easily explain the technical contents of the present invention and to help the understanding of the invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of ​​the present invention can be implemented in addition to the embodiments disclosed herein. Those skilled in the art will appreciate that the laser heat treatment method for a wafer structure according to the embodiment described with reference to FIGS. 1 to 4c and FIG. 7 and the method for manufacturing a semiconductor device using the same can be variously substituted, changed, and modified without departing from the technical idea of ​​the present invention. Therefore, the scope of the invention should not be defined by the described embodiments, but by the technical idea described in the claims.

[0070] Embodiments of the present invention can be applied to a heat treatment method for a workpiece and a method for manufacturing a device using the same. Embodiments of the present invention can be applied to a laser heat treatment method for a wafer structure and a method for manufacturing a semiconductor device using the same.

Claims

1. A step of preparing a wafer structure having a substantially circular structure or at least a partially circular structure; A step of masking a surrounding area of ​​the wafer structure while exposing one side of the wafer structure using a mask member defining an opening area for exposing one side of the wafer structure; and A laser heat treatment method for a wafer structure, comprising the step of performing heat treatment on the wafer structure by irradiating a line-shaped laser beam having a length greater than or equal to a diameter of the wafer structure and forming a laser line crossing the wafer structure, onto one surface of the wafer structure exposed by the opening area of ​​the mask member.

2. In paragraph 1, In the step of performing heat treatment on the above wafer structure, A laser heat treatment method for a wafer structure, wherein the line-shaped laser beam is irradiated in a scanning manner onto one surface of the wafer structure while changing the relative position between the wafer structure and the line-shaped laser beam.

3. In paragraph 2, A method for laser heat treatment of a wafer structure, wherein the step of performing heat treatment on the above wafer structure is performed while moving a stage on which the wafer structure is placed.

4. In paragraph 2, A method for laser heat treatment of a wafer structure, wherein the step of performing heat treatment on the above wafer structure is performed by moving the irradiation position of the line-shaped laser beam without moving the stage on which the wafer structure is placed.

5. In paragraph 1, A laser heat treatment method for a wafer structure, wherein the opening area of ​​the mask member has a diameter equal to or smaller than the diameter of the wafer structure.

6. In paragraph 5, A laser heat treatment method for a wafer structure, wherein the opening area of ​​the mask member has a diameter smaller than the diameter of the wafer structure, and the difference in diameter between the opening area and the wafer structure is 5 mm or less.

7. In paragraph 1, A laser heat treatment method for a wafer structure, wherein the mask member is designed to mask a peripheral area of ​​the wafer structure and an edge area of ​​one side of the wafer structure.

8. In paragraph 1, The above line-shaped laser beam is a laser heat treatment method for a wafer structure having a line width in the range of 1 ㎛ to 500 ㎛.

9. In paragraph 1, A laser heat treatment method for a wafer structure, wherein the above line-shaped laser beam includes any one of ultraviolet ray, visible ray, infrared ray, and microwave.

10. In paragraph 1, A laser heat treatment method for a wafer structure, wherein the wafer structure includes a semiconductor film or an insulator film, and heat treatment using the line-shaped laser beam is performed to change the crystallinity, physical properties, or film quality of the semiconductor film or the insulator film.

11. In paragraph 1, Before performing the heat treatment using the above line-shaped laser beam, the wafer structure has an initial temperature of 550°C or less, A laser heat treatment method for a wafer structure, wherein the heating temperature of the wafer structure by irradiation with the above-mentioned line-shaped laser beam is in the range of 200 to 3000°C.

12. A step of heat treating a wafer structure using a laser heat treatment method described in any one of claims 1 to 11; and A method for manufacturing a semiconductor device, comprising a step of forming a semiconductor device from the above heat-treated wafer structure.

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