Bonding and debonding method for wafer module, and initiator control system for wafer module

Abstract

Disclosed are a bonding and debonding method for a wafer module, and an initiator control system for a wafer module. In the bonding and debonding method for a wafer module, an adhesive layer is formed on one of an adhesive portion which is an edge of a wafer substrate and a corner portion which is an edge of a carrier substrate. The wafer substrate and the carrier substrate are bonded to each other such that the other of the adhesive portion and the corner portion is adhered to the adhesive layer. The adhesive layer is removed using a removal solution, a cutter, or a laser provided along the adhesive portion and the corner portion. As the adhesive layer is removed, the wafer substrate is separated from the carrier substrate.

Description

Bonding and debonding method of wafer modules, and initiator control system of wafer modules

[0001] The present invention relates to a wafer module capable of effective debonding, and a bonding and debonding method thereof, and more particularly, to a wafer module capable of effective debonding, and a bonding and debonding method thereof, which can perform effective debonding while improving the stability of a device mounted on the wafer substrate by minimizing the time that the wafer substrate is exposed to a solvent used in chemically debonding a wafer substrate and a carrier substrate attached to each other through an adhesive layer.

[0002] Recently, the demand for high-performance, high-density semiconductors has been increasing, and the production of these semiconductors requires processing wafers with relatively very thin thicknesses.

[0003] Meanwhile, in order to perform a process on a thin wafer, a so-called TBDB (temporary bonding and debonding) process is essential, in which a wafer substrate is temporarily attached to a carrier wafer having a relatively thick thickness, the process is performed, and the carrier wafer is removed.

[0004] Various technologies are being developed to perform this TBDB process, including mechanical debonding using physical methods and chemical debonding methods that dissolve the adhesive layer, and various other methods are being developed.

[0005] Related prior art literature includes Republic of Korea Patent No. 10-1896483.

[0006] Accordingly, the technical problem of the present invention is conceived from this point, and the purpose of the present invention is to provide a method for bonding and debonding a wafer module, which can perform effective debonding while improving the stability of a device mounted on a wafer substrate by minimizing the time that the wafer substrate is exposed to a solvent used in chemically debonding a wafer substrate and a carrier substrate attached to each other through an adhesive layer.

[0007] In addition, another object of the present invention is to provide an initiator control system for wafer debonding, which can precisely perform debonding while minimizing damage to the wafer by precisely controlling or correcting the position of forming a break portion of an initiator that forms a break portion in an adhesive layer between a wafer and a carrier substrate in order to debond a wafer attached to a carrier substrate.

[0008] In a method for bonding and debonding a wafer module according to one embodiment for realizing the object of the present invention described above, an adhesive layer is formed on either an adhesive portion, which is an edge of a wafer substrate, or a corner portion, which is an edge of a carrier substrate. The wafer substrate and the carrier substrate are bonded to each other so that the other of the adhesive portion and the corner portion is adhered to the adhesive layer. The adhesive layer is removed using a removal solution, a cutter, or a laser provided along the adhesive portion and the corner portion. As the adhesive layer is removed, the wafer substrate is separated from the carrier substrate.

[0009] In one embodiment, the adhesive layer is formed in a circular band shape along a rounded edge of the wafer substrate, and the adhesive portion on which the adhesive layer is formed may not overlap with the mounting portion on which the element portion is formed on the wafer substrate.

[0010] In one embodiment, after the step of forming an adhesive layer on the adhesive portion, the method may further include a step of forming a support unit between the mounting portion of the wafer substrate and the central portion of the carrier substrate to maintain a gap between the wafer substrate and the carrier substrate.

[0011] In one embodiment, in the step of removing the adhesive layer using the removal solution, the edge of the wafer module in which the wafer substrate, the adhesive layer, and the carrier substrate are bonded to each other may be positioned in a chamber portion in which the removal solution is stored.

[0012] In one embodiment, in the step of removing the adhesive layer using the removal solution, the wafer module may be fixed to a rotation unit, and the wafer module may be rotated with its edge immersed in the removal solution according to the rotation of the rotation unit.

[0013] In one embodiment, the depth to which the wafer module is immersed in the removal solution may be equal to the width over which the adhesive layer is formed.

[0014] In one embodiment, in the step of removing the adhesive layer using the removal solution, the removal solution may be sprayed on the edge of a wafer module in which the wafer substrate, the adhesive layer, and the carrier substrate are bonded to each other.

[0015] In one embodiment, in the step of removing the adhesive layer using the removal solution, the removal unit sprays the removal solution on at least one side of the wafer module, and the wafer module can rotate.

[0016] In one embodiment, in the step of removing the adhesive layer using the cutter, the end of the cutter is extended in a blade shape, and the end of the blade shape can directly induce a break in the adhesive layer.

[0017] In one embodiment, in the step of removing the adhesive layer using the laser, the laser may be irradiated toward the adhesive layer.

[0018] Another embodiment of the initiator control system for realizing the above-described object of the present invention includes a cutting unit, a sensor unit, a calculation unit, and a control unit. The cutting unit induces a break in an adhesive layer of a wafer module. The sensor unit obtains information about a first distance to the cutting unit and a second distance to the adhesive layer. The calculation unit calculates information about a relative distance between an end of the cutting unit and the adhesive layer based on the information about the first distance and the second distance. The control unit controls the cutting unit based on the calculated information to align an end of the cutting unit with the adhesive layer.

[0019] In one embodiment, the sensor unit can obtain information about the first distance and the second distance by irradiating a laser onto the surface of the cut portion and the surface of the adhesive layer.

[0020] In one embodiment, the sensor unit can move horizontally from a first position to a second position along a reference line to obtain information about the first distance and the second distance.

[0021] In one embodiment, the first distance may be a distance from a reference line along which the sensor unit moves to an upper surface of the cut portion, and the second distance may be a distance from a reference line along which the sensor unit moves to an upper surface of the adhesive layer.

[0022] In one embodiment, the wafer module may further include a wafer formed on an upper or lower surface of the adhesive layer, and a carrier substrate formed on an upper or lower surface of the adhesive layer.

[0023] In one embodiment, the second distance can be calculated by performing frequency conversion from a signal generated by a difference in refractive index in the wafer, the adhesive layer, and the carrier substrate.

[0024] In one embodiment, the second distance may be calculated based on an interference signal generated through the wafer, the adhesive layer, and the carrier substrate.

[0025] In one embodiment, the calculation unit may additionally calculate information about the relative distance by using previously stored information about the thickness of the cut portion and information about the thickness of the adhesive layer.

[0026] In one embodiment, the control unit can align the end of the cut portion to the center of the adhesive layer based on information about the thickness of the adhesive layer.

[0027] In one embodiment, the sensor unit can obtain information about the first distance by measuring the distance to the cut portion at a plurality of locations, and obtain information about the second distance by measuring the distance to the adhesive layer at a plurality of locations.

[0028] According to embodiments of the present invention, the adhesive layer that adheres the wafer substrate and the carrier substrate is formed only along the edge, and accordingly, the removal solution that removes the adhesive layer is also provided only along the edge, so that penetration of the removal solution into the element portion mounted on the wafer substrate can be prevented.

[0029] Thus, damage to the component is minimized during the removal process of the adhesive layer, and since the adhesive layer is formed over a relatively small area, the removal process of the adhesive layer is minimized.

[0030] In addition, in the process of removing the adhesive layer, the process is performed so that only the adhesive layer is immersed in the chamber where the removal solution is stored, so that the removal process is easy to perform, and in particular, by rotating the wafer module, only the edge can be immersed in the removal solution at a certain depth, so that the stability and reliability of the process are improved.

[0031] In contrast, in the process of removing the adhesive layer, the removal solution is sprayed only toward the adhesive layer and the wafer module is rotated, so the process of removing the adhesive layer can be simplified by applying a relatively simple spraying unit.

[0032] In addition, according to embodiments of the present invention, when inducing a break in an adhesive layer to which a wafer is attached, the exact location of the adhesive layer is derived in advance, and the cutting part is accurately moved to the adhesive layer, thereby inducing an accurate and precise break in the adhesive layer while minimizing damage to the wafer.

[0033] That is, by using a sensor unit that senses distance using a laser, information on the distance to the surface of the cut portion and the distance to the surface of the adhesive layer is obtained, and based on information on the thickness of the cut portion and the adhesive layer that has been previously stored, the relative distance between the end of the cut portion and the center of the adhesive layer can be calculated through a relatively simple calculation, so that accurate and precise fracture induction as described above can be implemented.

[0034] In this case, the distance to the surface of the adhesive layer can be obtained by frequency converting a signal based on the difference in refractive index in each layer of the wafer module on which the adhesive layer is formed, or can be calculated based on an interference signal, so that the distance to the surface of the adhesive layer can be easily obtained even if the wafer is located above or below the adhesive layer.

[0035] In addition, the cutting part may be a cutter that physically performs breaking, or a laser module that performs breaking through laser irradiation, so that effective breaking can be induced by considering the state or material properties of various adhesive layers.

[0036] Furthermore, in the case of the sensor unit, not only when measuring the distance to the cut section, but also when measuring the distance to the adhesive layer, distance information is obtained based on results measured at multiple locations, so that accurate distance information can be obtained through correction even when the cut section as well as the wafer module is positioned in a tilted manner.

[0037] Figures 1a to 1c are process diagrams illustrating a bonding step of a wafer module according to one embodiment of the present invention.

[0038] Figures 2a to 2c are cross-sectional views taken along line II' at each step of Figures 1a to 1c.

[0039] Fig. 3a is a plan view showing another example of the wafer module, and Fig. 3b is a cross-sectional view taken along line II-II' of Fig. 3a.

[0040] FIGS. 4A and 4B are front and side views of a process diagram illustrating an example of a debonding step for the wafer module of FIG. 1C or the wafer module of FIG. 3A.

[0041] FIG. 5 is a front view of a process diagram illustrating another example of a debonding step for the wafer module of FIG. 1c or the wafer module of FIG. 3a.

[0042] FIG. 6 is a schematic diagram illustrating an initiator control system of a wafer module according to another embodiment of the present invention.

[0043] Fig. 7 is a schematic diagram showing a state in which a fractured portion is formed in an adhesive layer using the control system of Fig. 6.

[0044] FIG. 8a and FIG. 8b are exemplary diagrams illustrating a state in which information on various positions of a wafer module is acquired through the sensor unit of FIG. 6.

[0045] FIG. 9a and FIG. 9b are other examples illustrating a state in which information on various positions of a wafer module is acquired through the sensor unit of FIG. 6.

[0046] <Explanation of symbols>

[0047] 10, 20, 30: Wafer module 100: Wafer substrate

[0048] 200: Adhesive layer 201, 202: Removal area

[0049] 300: carrier substrate 400: support unit

[0050] 500: Chamber part 510, 710: Removal solution

[0051] 600: Rotating unit 700: Spraying unit

[0052] 1000: Initiator Control System

[0053] 1200: Cut 1210: End

[0054] 1300: Sensor part 1400: Drive part

[0055] 1500: Operation section 1600: Control section

[0056] The present invention is susceptible to various modifications and takes various forms, and thus embodiments are described in detail herein. However, this is not intended to limit the present invention to a specific disclosed form, but rather to encompass all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present invention. Similar reference numerals have been used to designate similar components throughout the description of each drawing. While terms such as "first," "second," etc. may be used to describe various components, these components should not be limited by these terms.

[0057] The above terms are used solely to distinguish one component from another. The terms used in this application are used solely to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

[0058] In this application, it should be understood that terms such as “comprise” or “consist of” are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0059] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0060] Hereinafter, with reference to the attached drawings, a preferred embodiment of the present invention will be described in more detail.

[0061] FIGS. 1A to 1C are process diagrams illustrating a bonding step of a wafer module according to one embodiment of the present invention. FIGS. 2A to 2C are cross-sectional views taken along line II' at each step of FIGS. 1A to 1C.

[0062] First, before explaining the bonding and debonding method of the wafer module according to the present embodiment, the configuration of the wafer module (10) that is the target of the bonding and debonding will be explained. The wafer module (10) includes a wafer substrate (100), an adhesive layer (200), and a carrier substrate (300).

[0063] In this case, the wafer substrate (100) and the carrier substrate (300) may have a circular plate shape with substantially the same area, and the diameter in the circular plate shape may vary.

[0064] In addition, the wafer substrate (100) has a mounting portion (110) formed in the center where a component portion (130) is mounted, and an adhesive portion (120) is formed along the outer periphery of the mounting portion (110). In this case, since the wafer substrate (100) has a circular plate shape, the adhesive portion (120) may be defined as an area having, for example, a circular band shape, with a width equal to a predetermined distance from the outer periphery of the circular plate shape.

[0065] Likewise, the carrier substrate (300) also includes a central portion (310) corresponding to the central area and a corner portion (320) along the periphery of the central portion (310), and the area of ​​the central portion (310) has substantially the same area as the area of ​​the element portion (130), and the area of ​​the corner portion (320) has substantially the same area as the area of ​​the adhesive portion (120).

[0066] The above adhesive layer (200) is used to adhere the wafer substrate (100) and the carrier substrate (300) to each other, and is formed only on the corner portion (320) of the carrier substrate (300) and the adhesive portion (120) of the wafer substrate (100).

[0067] That is, the formation area of ​​the adhesive layer (200) corresponds to an area having a width of a predetermined distance from the outer surface of the circular plate, and thus, the adhesive layer (200) is formed to have a circular band shape overall.

[0068] Below, first, the bonding, i.e., the adhesion step of the wafer module (10) will be described.

[0069] Referring to FIGS. 1A and 2A, first, on the wafer substrate (100), a component (130) is mounted on the central mounting portion (110). In this case, the component (130) is not limited in shape or structure and may be a variety of electronic components that implement similar diverse functions.

[0070] At this time, the element portion (130) is not formed in the bonding portion (120), which is an outer region along the outer surface of the wafer substrate (100).

[0071] However, through the above-described FIGS. 1A and 2A, the state in which the element portion (130) is first formed on the wafer substrate (100) is exemplified, but the element portion (130) may be mounted through a later process after the carrier substrate (300) and the wafer substrate (100) are bonded to each other by the adhesive portion (120).

[0072] That is, it is sufficient to understand that the element portion (130) illustrated through the drawing is an example of an area where the element portion is formed or will be formed through a future process.

[0073] After this, referring to FIGS. 1b and 2b, the adhesive layer (200) is formed on the adhesive portion (120) of the wafer substrate (100).

[0074] In this case, the adhesive layer (200) is formed only in the area corresponding to the adhesive portion (120) of the wafer substrate (100) and the corner portion (320) of the carrier substrate (300) aligned therewith, and accordingly, the adhesive portion (120) is not formed in the area where the element portion (130) is mounted.

[0075] Accordingly, the shape of the adhesive layer (200) has a circular band or circular ring shape as shown, and the width of the adhesive layer (200) formed can be varied within a range that does not overlap with the element portion (130).

[0076] The above adhesive layer (200) is formed by applying an adhesive that substantially adheres the wafer substrate (100) and the carrier substrate (300) to each other, and the type of the applied adhesive can vary widely.

[0077] However, the adhesive layer (200) must be composed of a material that can be easily removed chemically by a removal solution described below and can also be easily removed through a physical or optical removal method, and at the same time, it is sufficient if it has adhesiveness that can stably fix the wafer substrate (100) and the carrier substrate (300) to each other in various subsequent processes.

[0078] In addition, the formation height, i.e., thickness, of the adhesive layer (200) may be formed to be substantially the same thickness as the height of the element (130) mounted on the wafer substrate (100) or to be mounted through a future process, or may be formed to be higher than the height of the element (130). Thus, damage to the element (130) located inside can be minimized and a stable process can be performed.

[0079] Furthermore, through FIGS. 1b and 2b, it is exemplified that the adhesive layer (200) is formed on the wafer substrate (100), but alternatively, the adhesive layer (200) may be first formed on the carrier substrate (300).

[0080] After this, referring to FIGS. 1C and 2C, after aligning the carrier substrate (300) on the wafer substrate (100) on which the adhesive layer (200) is formed, the carrier substrate (300) is brought into contact with the wafer substrate (100) so that the corner portion (320) of the carrier substrate (300) is aligned with the adhesive layer (200) in the vertical direction.

[0081] However, for convenience of explanation, FIG. 1c illustrates a state in which the carrier substrate (300) is aligned, and FIG. 2c illustrates a carrier substrate (300) aligned with the wafer substrate (100).

[0082] Thus, the wafer module (10) is manufactured by bonding the wafer substrate (100) and the carrier substrate (300) to each other by the adhesive layer (200) formed along the edge.

[0083] Meanwhile, as described above, if the adhesive layer (200) is first formed on the corner portion (320) of the carrier substrate (300), the wafer module (10) can be manufactured while the wafer substrate (100) is attached on the adhesive layer (200).

[0084] Fig. 3a is a plan view showing another example of the wafer module, and Fig. 3b is a cross-sectional view taken along line II-II*?* of Fig. 3a.

[0085] The wafer module (20) may be configured substantially the same as the wafer module (10) in FIGS. 1C and 2C, except that a support unit (400) is additionally formed in the mounting portion (110) and the central portion (310).

[0086] That is, in the wafer module (10) in FIGS. 1C and 2C, a separate adhesive layer (200) is not formed on the mounting portion (110) and the central portion (310) where the element portion (130) is mounted, so when the radius of the wafer module (10) increases, a phenomenon in which the mounting portion (110) or the central portion (310) sag may occur.

[0087] Accordingly, damage to the element (130) mounted on the mounting portion (110) may occur. Accordingly, in the wafer module (20), the support unit (400) may be additionally formed in the mounting portion (110) and the central portion (310) to maintain a constant gap between the wafer substrate (100) and the carrier substrate (300).

[0088] As illustrated, the support units (400) may be arranged in multiples at a predetermined interval in the area corresponding to the mounting portion (110) and the central portion (310). At this time, the pattern or interval in which the support units (400) are arranged may vary, and although a certain pattern is exemplified in FIG. 3A, the formed pattern may also be formed in various arbitrary patterns.

[0089] In addition, the support unit (400) may be formed to overlap with the element portion (130), and it is sufficient to maintain a constant gap between the wafer substrate (100) and the carrier substrate (300) while having a predetermined strength and a material that does not affect the element portion (130).

[0090] Furthermore, it is sufficient if the height, i.e., the thickness, of the support unit (400) is formed to be substantially the same as the thickness of the adhesive layer (200).

[0091] Meanwhile, in the bonding method of the wafer module (20) of the present embodiment, it is substantially the same as the bonding method of the wafer module (10) described with reference to FIGS. 1A to 2C, but in the step of forming the adhesive layer (200), the support unit (400) must also be formed simultaneously.

[0092] That is, in FIGS. 1b and 2b, when the adhesive layer (200) is formed on the adhesive portion (120), a plurality of support units (400) are formed on the mounting portion (110) with a predetermined pattern or interval.

[0093] In contrast, when the adhesive layer (200) is formed on the corner portion (320), a plurality of support units (400) are formed on the central portion (310) with a predetermined pattern or interval.

[0094] Through this, the wafer module (20) in which the support unit (400) is additionally formed can be manufactured.

[0095] Below, an example in which a debonding process is performed after bonding of the wafer module (10) is performed is described.

[0096] Meanwhile, in a state where the wafer module (10) is bonded, as described above, a predetermined process for the wafer substrate (100), for example, mounting the element portion (130) or a predetermined processing process for the element portion (130), can be performed, and after this process is completed and the manufacturing of the wafer substrate (100) is completed, the following debonding process is performed.

[0097] FIGS. 4A and 4B are front and side views of a process diagram illustrating an example of a debonding step for the wafer module of FIG. 1C or the wafer module of FIG. 3A.

[0098] The debonding process for the above wafer module can be performed in the same manner for the wafer module (10) of FIG. 1c and the wafer module (20) of FIG. 3a, but for the convenience of explanation, the wafer module (10) of FIG. 1c is used as an example in the drawings.

[0099] In addition, in the debonding process for the above wafer module, a chemical debonding process in which a predetermined removal solution is provided will first be described.

[0100] Referring to FIGS. 4a and 4b, the wafer module (10) in which the wafer substrate (100) and the carrier substrate (300) are bonded to each other by the adhesive layer (200) through the bonding process is debonded as a predetermined removal solution is provided to the adhesive layer (200).

[0101] In this case, the debonding means that the wafer substrate (100) is separated from the carrier substrate (300) as the adhesive layer (200) is removed by the removal solution.

[0102] In this debonding process, first, the wafer module (10) is fixed by a rotation unit (600). The rotation unit (600) is fixed to the outer surface of the wafer substrate (100), that is, the surface not facing the carrier substrate (300). The rotation unit (600) may be a separate rotation unit that is used only in the debonding process, or alternatively, a transport unit that transports the wafer substrate (100) may function as a rotation unit.

[0103] Meanwhile, in the above debonding process, a predetermined removal solution (510) is stored in the chamber (500), and the removal solution (510) is sufficient as a solution that dissolves and removes the adhesive layer (200).

[0104] In particular, the chamber portion (500) is opened upward, and the removal solution (510) is also stored in a state in which it is exposed upward.

[0105] Accordingly, the wafer module (10) fixed to the rotation unit (600) is positioned in a vertical direction so that only the corner of the wafer module (10) is immersed in the removal solution (510).

[0106] That is, only a portion of the wafer module (10) is positioned inside the removal solution (510) so that only the adhesive layer (200), the adhesive portion (120), and the corner portion (320) formed at the corner of the wafer module (10) are immersed in the removal solution (510).

[0107] In this position, as shown, only a lower portion of the adhesive layer (200) is immersed in the removal solution (510), forming a so-called removal area (201).

[0108] At this time, it is sufficient if the depth of the removal area (201) immersed in the removal solution (510) is substantially the same as the width of the adhesive layer (200).

[0109] After this, when the rotation unit (600) rotates, the wafer module (10) rotates around the center, and accordingly, the removal area (201) immersed in the removal solution (510) also changes, and the removal solution (510) is provided to the entire adhesive layer (200).

[0110] Thus, the adhesive layer (200) is removed by the removal solution (510), and through this, the wafer substrate (100) is separated from the carrier substrate (300).

[0111] Meanwhile, it is obvious that the rotation unit (600) can repeatedly rotate the wafer module (10) until the adhesive layer (200) is removed by the removal solution (510).

[0112] As described above, since the removal solution (510) is provided only to the adhesive layer (200), and further to the adhesive portion (120) and the corner portion (320), the removal solution (510) is prevented from being provided to the element portion (130), and thus damage to the element portion (130) can be minimized.

[0113] FIG. 5 is a front view of a process diagram illustrating another example of a debonding step for the wafer module of FIG. 1c or the wafer module of FIG. 3a.

[0114] The debonding step of the wafer module below is also a chemical debonding process in which a predetermined removal solution is provided in the debonding process for the wafer module.

[0115] That is, as in FIG. 5c, the wafer module (10) may be fixed to the rotation unit (not shown, same as FIG. 4b) and positioned vertically, and a removal solution (710) may be provided through a separate spray unit (700).

[0116] In this case, the spray unit (700) may be positioned on one side of the wafer module (10), and the removal solution (710) dispersed by the spray unit (700) may be controlled to be provided only to the adhesive layer (200) of the wafer module (10), and further, to the adhesive portion (120) and the corner portion (320). Accordingly, a portion of the adhesive layer (200) is exposed to the removal solution (710), and a so-called removal area (202) is formed.

[0117] In addition, during the process in which the spraying unit (700) sprays the removal solution (710), the rotation unit rotates the wafer module (10), and accordingly, the removal area (202) where the removal solution (710) is provided also changes, and the removal solution (710) is provided to the entire adhesive layer (200).

[0118] Thus, the adhesive layer (200) is removed by the removal solution (710), and through this, the wafer substrate (100) is separated from the carrier substrate (300).

[0119] Meanwhile, it is obvious that the rotation unit can repeatedly rotate the wafer module (10) until the adhesive layer (200) is removed by the removal solution (710).

[0120] Furthermore, although the drawing illustrates that the spray unit (700) is formed only on one side of the wafer module (10), a plurality of spray units may be provided on various sides of the wafer module (10) to spray the removal solution (710) onto the adhesive layer (200) at a plurality of locations.

[0121] As described above, since the removal solution (710) is provided only to the adhesive layer (200), and further, to the adhesive portion (120) and the corner portion (320), the removal solution (710) is prevented from being provided to the element portion (130), and thus damage to the element portion (130) can be minimized.

[0122] In the above, the bonding and debonding method of the wafer module, and in particular, the so-called chemical debonding method using a predetermined removal solution for performing debonding, has been described.

[0123] However, when performing debonding of the wafer module, a physical debonding method is also possible, and thus, the physical debonding method for debonding the wafer module will be described below. However, in the case of such a physical debonding method, the location of the breaking portion for debonding must be accurately performed in the adhesive layer, and thus, a so-called initiator control system is required.

[0124] Therefore, below, as a debonding method of the above wafer module, an initiator control system that controls a more accurate fracture formation location together with a physical debonding method is described simultaneously.

[0125] Fig. 6 is a schematic diagram illustrating an initiator control system according to another embodiment of the present invention. Fig. 7 is a schematic diagram illustrating a state in which a fracture portion is formed in an adhesive layer using the control system of Fig. 6.

[0126] Referring to FIG. 6, the initiator control system (1000, hereinafter referred to as the control system) according to the present embodiment induces a break in the adhesive layer (200) included in the wafer module (10), thereby separating the wafer substrate (100).

[0127] At this time, the wafer module (10) is substantially the same as the wafer module (10) described with reference to FIGS. 1a to 1c, and the wafer substrate (100) is separated by inducing physical breakage in the adhesive layer (200) included in the wafer module (10).

[0128] That is, since the wafer substrate (100) on which the process is generally performed is formed with a relatively thin thickness, it is attached to the carrier substrate (300) via the adhesive layer (200) for stable process performance. Accordingly, when the process for the wafer substrate (100) is completed, the wafer substrate (100) must be separated from the carrier substrate (300), and for this purpose, as described above, a break in the adhesive layer (200) must be induced.

[0129] In particular, in the present embodiment, in order to induce a break in the adhesive layer (200) as described above, a physical break is performed using a cutting section (1200). In addition, the thing that induces such a physical break is called an initiator, and the control system (1000) in the present embodiment is a system that controls the induction of such a physical break.

[0130] Specifically, the control system (1000) includes a cutting unit (1200), a sensor unit (1300), a driving unit (1400), an operation unit (1500), and a control unit (1600).

[0131] The above-described cutting portion (1200) induces a break in the adhesive layer (200), and may be, for example, a cutter. That is, as illustrated in FIG. 7, the end (1210) of the cutting portion (1200) is formed sharply like a cutter, so as to induce a physical break in the adhesive layer (200), that is, a predetermined crack in the adhesive layer (200). Accordingly, a break portion (121) is induced in the adhesive layer (200), and according to the formation of the break portion (121), the wafer substrate (100) can be separated to the outside.

[0132] In this way, if the cutting portion (1200) is a cutter, the end (1210) of the cutting portion must be directly inserted into the inside of the adhesive layer (200) to induce a break in the adhesive layer (200), and through this, the break portion (121) can be directly formed.

[0133] Alternatively, the cutting portion (1200) may be a laser irradiation module, and thus, a laser may be irradiated from the end (1210) of the cutting portion (1200). The irradiated laser may be applied to the adhesive layer (200), thereby inducing a predetermined fracture portion (121) in the adhesive layer (200), and similarly, the wafer substrate (100) may be separated to the outside through the fracture portion (121).

[0134] In the case of the above-mentioned cutting section (1200), in addition to the structure illustrated above, it may be composed of various cuttable units.

[0135] Meanwhile, the surface, i.e., the upper surface of the cut portion (1200), must be formed as a plane extending parallel to the surface, and accordingly, the distance to the surface of the cut portion (1200) can be measured through the sensor portion (1300).

[0136] That is, the sensor unit (1300) measures a first distance (L1), which is a distance to the surface of the cut portion (1200), and a second distance (L2), which is a distance to the surface of the adhesive layer (200), and may be, for example, a laser sensor module capable of distance measurement.

[0137] In addition, through the laser sensor module, a laser having a wavelength that penetrates the wafer module (10) can be irradiated, and based on this, the sensor unit (1300) can measure the second distance (L2).

[0138] In general, the cutting section (1200) is positioned horizontally apart from the wafer module (10) by a predetermined distance, and then moves toward the wafer module (10) to perform the breaking. Accordingly, in the initial state, as illustrated in FIG. 6, the cutting section (1200) and the wafer module (10) are positioned horizontally apart from each other by a predetermined distance.

[0139] Accordingly, the sensor unit (1300) measures the first distance (L1), which is the distance from the first position (P1) to the surface of the cutting unit (1200), and measures the second distance (L2), which is the distance from the second position (P2) to the surface of the adhesive layer (200), taking into account the positions of the cutting unit (1200) and the wafer module (10) that are positioned spaced apart from each other in the initial state as shown in FIG. 6.

[0140] In this case, the sensor unit (1300) is positioned at a certain height and moves horizontally in parallel along a reference line (Ref) extending along the certain height. That is, after measuring the first distance (L1) at the first position (P1), it moves to the second position (P2) and measures the second distance (L2).

[0141] The above driving unit (1400) controls the horizontal parallel movement of the sensor unit (1300), and can receive information about the first position (P1) and the second position (P2) in advance.

[0142] In the above sensor unit (1300), the first distance (L1) can be obtained based on information that the laser (1310) irradiated downward at the first position (P1) is reflected from the upper surface, i.e., the surface, of the cutting unit (1200).

[0143] Meanwhile, in the case of the above-mentioned cutting portion (1200), it may not be extended exactly in the horizontal direction. That is, the above-mentioned cutting portion (1200) may be positioned in a tilted state in the initial state.

[0144] Accordingly, in this embodiment, when obtaining the first distance (L1) of the sensor unit (1300), the first distance (L1) can be obtained by compensating for it based on information measured at multiple locations.

[0145] That is, the first position (P1) may include a plurality of positions, and accordingly, the sensor unit (1300) may acquire information reflected from the upper surface of the cutting unit (1200) while its position is changed to a plurality of positions, and may apply a predetermined compensation algorithm based on the information acquired in this manner to ultimately acquire the first distance (L1).

[0146] In this case, the compensation algorithm applied in the sensor unit (1300) is not limited, and information such as the average and standard deviation can be obtained from multiple distance information, and based on this, information on the tilting degree of the cutting unit (1200), i.e., the tilting angle, can be obtained.

[0147] Furthermore, the sensor unit (1300) may be equipped with one sensor unit and may be moved to multiple locations to obtain multiple pieces of distance information, or multiple sensor units may be equipped at preset locations to obtain multiple pieces of distance information at each location.

[0148] Likewise, in the sensor unit (1300), the second distance (L2) can be obtained based on information that the laser (1310) irradiated downward at the second position (P2) is reflected by the upper surface, i.e., the surface, of the adhesive layer (200) of the wafer module (10). However, in this case, since the wafer module (10) is composed of three layers, it is necessary to accurately obtain information about the laser light reflected from the upper surface of the adhesive layer (200).

[0149] In this case, when measuring the second distance (L2) in the sensor unit (1300), the second distance (L2) can be obtained by compensating for the information measured at multiple locations.

[0150] That is, similar to the cutting section (1200), the wafer module (10) can also be positioned in a tilted state by a predetermined angle as a whole. Accordingly, as described above, the second position (P2) at which the sensor section (1300) measures the position of the adhesive layer (200) also includes a plurality of positions, and the sensor section (1300) can obtain information reflected from the upper surface of the adhesive layer (200) while its position is changed to a plurality of positions.

[0151] Furthermore, as described above, the second distance (L2) is finally obtained by applying a predetermined compensation algorithm to the information on the multiple locations obtained in this manner.

[0152] In addition, as described above, in addition to obtaining the plurality of distance information while the sensor unit (1300) is equipped with one and moves to a plurality of locations, it is also possible to obtain the plurality of distance information at each of the preset locations while the sensor units are equipped with one at each preset location.

[0153] The acquisition of the second distance (L2) in the above sensor unit (1300) is described below with reference to FIGS. 8a to 9b.

[0154] FIG. 8a and FIG. 8b are exemplary diagrams illustrating a state in which information on various positions of a wafer module is acquired through the sensor unit of FIG. 6.

[0155] For example, in FIG. 8a, when the wafer module (10) is stacked in the order of a wafer substrate (100), an adhesive layer (200), and a carrier substrate (300) from the top, a state is illustrated in which a laser is irradiated at the second position (P2) to obtain the second distance (L2), which is the distance to the upper surface of the adhesive layer (200).

[0156] In this case, the wafer substrate (100) includes silicon (Si), and the carrier substrate (300) includes glass, so the constituent materials are different from those of the adhesive layer (200).

[0157] Accordingly, in a structure in which multiple layers are stacked as in Fig. 8a, each layer has a different refractive index, and accordingly, the laser irradiated at the interface of each layer is refracted and reflected, so that various reflection signals can be obtained.

[0158] Additionally, if a fast Fourier transform is performed on the signals acquired in this way, information such as that in Fig. 8b can be acquired.

[0159] That is, information (①) on the displacement signal to the upper surface of the wafer substrate (100), information (②) on the thickness signal of the carrier substrate (300), information (③) on the thickness signal of the wafer substrate (100), and information (④) on the displacement signal to the lower surface of the wafer substrate (100) can be obtained as in FIG. 8b, and based on this, the second distance (L2, ①+③) to the adhesive layer (200) can be finally measured.

[0160] FIG. 9a and FIG. 9b are other examples illustrating a state in which information on various positions of a wafer module is acquired through the sensor unit of FIG. 6.

[0161] In contrast, for example, as in FIG. 9a, even if the wafer module (30) is stacked in the order of a carrier substrate (300), an adhesive layer (200), and a wafer substrate (100) from the top, the second distance can be measured similarly.

[0162] That is, when multiple layers having different refractive indices are stacked as in Fig. 9a, the laser irradiated at the interface of each layer is refracted and reflected, and various reflection signals are obtained, and various information can be obtained through fast Fourier transform as in Fig. 9b.

[0163] That is, information on the thickness signal of the adhesive layer (200) (①), information on the displacement signal to the upper surface of the carrier substrate (300) (②), information on the thickness signal of the carrier substrate (300) (③), information on the total thickness signal of the carrier substrate (300) and the adhesive layer (200) (④), information on the displacement signal to the lower surface of the adhesive layer (200) (⑤), information on the multi-reflection signal (⑥), and information on the thickness signal of the wafer substrate (100) (⑦) can be obtained. Through this, the second distance (L2, ②+③) to the adhesive layer (200) can be finally measured.

[0164] As described above, in the sensor unit (1300), even if the wafer module (10, 30) is formed by stacking multiple layers, regardless of the order of the stacked layers, the second distance (L2) to the surface of the adhesive layer (200), i.e., the upper surface, can be measured based on information about the refractive index of each layer constituting the wafer module (10, 30), the laser being irradiated, and the signal reflected from the wafer module (10, 30).

[0165] Meanwhile, in the above, when measuring the second distance (L2) in the sensor unit (1300), it is exemplified that the calculation is performed by performing frequency conversion from a signal generated by the difference in refractive index of each layer, but alternatively, the calculation may be performed based on an interference signal.

[0166] That is, the laser signal generated from the sensor unit (1300) passes through the wafer, the adhesive layer, and the carrier substrate, inducing interference, and the second distance (L2) can be measured based on this interference signal.

[0167] In the above calculation unit (1500), based on the information about the first distance (L1) and the second distance (L2) obtained through the sensor unit (1300), the relative distance (l) between the end (1210) of the cut unit (1200) and the adhesive layer (200) is calculated.

[0168] Specifically, in the above calculation unit (1500), in order to calculate the relative distance (l), in addition to the information about the first and second distances (L1, L2), the calculation is performed using information (KT) about the thickness of the cut portion (1200) and information (AT) about the thickness of the adhesive layer (200).

[0169] That is, in the above calculation unit (1500), the relative distance (l) can be calculated through the following equation (1).

[0170] Equation (1)

[0171] In this case, D is the distance from the upper surface of the cut portion (1200) to the upper surface of the wafer module (10), as shown in FIG. 6, and d means the thickness of the layer (in FIG. 6, the wafer substrate (100)) formed on the uppermost part of the wafer module (10).

[0172] That is, D can be calculated through the difference between the first distance and the second distance (L1-L2), and d is the thickness of the wafer substrate (100) or carrier substrate (300), which is a value that is already known, or can be obtained through the information of '③' as described in the preceding FIG. 8a and FIG. 9a.

[0173] Meanwhile, in the case of the above formula (1), the cut portion (1200) can be applied regardless of whether the cut portion (1200) is located at the lower portion of the adhesive layer (200) at the initial position (Fig. 6) or, alternatively, whether the cut portion (1200) is located at the upper portion of the adhesive layer (200) at the initial position.

[0174] As described above, when the relative distance (l) is calculated by the calculation unit (1500), the control unit (1600) controls the cutting unit (1200) to move the end (1210) of the cutting unit (1200) so that it is positioned at the center of the adhesive layer (200).

[0175] The moved state is as shown in Fig. 7.

[0176] Of course, in Fig. 7, the cutting part (1200) is an example of a case in which the cutting part (1200) directly physically contacts the adhesive layer (200) as a cutter to induce a break. If the cutting part (1200) is a laser irradiation module, it is sufficient for the end (1210) of the cutting part (1200) to be positioned so as to be close to the center of the adhesive layer (200) in a horizontal state.

[0177] Meanwhile, if the exact thickness information of the adhesive layer (200) is already known and stored, the end (1210) of the cut portion (1200) can be positioned precisely at the center of the adhesive layer (200) through calculation of the relative distance (l) using the above equation (1).

[0178] However, if it is difficult to accurately obtain the thickness information of the adhesive layer (200), the relative distance (l) can be calculated by utilizing the known information on the thickness of the adhesive layer (200).

[0179] However, in this case, the end (1210) of the cut portion (1200) may not be located exactly at the center of the adhesive layer (200). However, in inducing an actual fracture, it is not necessary to precisely fracture the center of the adhesive layer (200), so the fracture of the adhesive layer (200) and the separation process of the wafer substrate (100) through it can be performed smoothly.

[0180] According to the embodiments of the present invention as described above, the adhesive layer that adheres the wafer substrate and the carrier substrate is formed only along the edge, and accordingly, the removal solution that removes the adhesive layer is also provided only along the edge, so that penetration of the removal solution into the element portion mounted on the wafer substrate can be prevented.

[0181] Thus, damage to the component is minimized during the removal process of the adhesive layer, and since the adhesive layer is formed over a relatively small area, the removal process of the adhesive layer is minimized.

[0182] In addition, in the process of removing the adhesive layer, the process is performed so that only the adhesive layer is immersed in the chamber where the removal solution is stored, so that the removal process is easy to perform, and in particular, by rotating the wafer module, only the edge can be immersed in the removal solution at a certain depth, so that the stability and reliability of the process are improved.

[0183] In contrast, in the process of removing the adhesive layer, the removal solution is sprayed only toward the adhesive layer and the wafer module is rotated, so the process of removing the adhesive layer can be simplified by applying a relatively simple spraying unit.

[0184] In addition, according to embodiments of the present invention, when inducing a break in an adhesive layer to which a wafer is attached, the exact location of the adhesive layer is derived in advance, and the cutting part is accurately moved to the adhesive layer, thereby inducing an accurate and precise break in the adhesive layer while minimizing damage to the wafer.

[0185] That is, by using a sensor unit that senses distance using a laser, information on the distance to the surface of the cut portion and the distance to the surface of the adhesive layer is obtained, and based on information on the thickness of the cut portion and the adhesive layer that has been previously stored, the relative distance between the end of the cut portion and the center of the adhesive layer can be calculated through a relatively simple calculation, so that accurate and precise fracture induction as described above can be implemented.

[0186] In this case, the distance to the surface of the adhesive layer can be obtained by frequency converting a signal based on the difference in refractive index in each layer of the wafer module on which the adhesive layer is formed, or can be calculated based on an interference signal, so that the distance to the surface of the adhesive layer can be easily obtained even if the wafer is located above or below the adhesive layer.

[0187] In addition, the cutting part may be a cutter that physically performs breaking, or a laser module that performs breaking through laser irradiation, so that effective breaking can be induced by considering the state or material properties of various adhesive layers.

[0188] Furthermore, in the case of the sensor unit, not only when measuring the distance to the cut section, but also when measuring the distance to the adhesive layer, distance information is obtained based on results measured at multiple locations, so that accurate distance information can be obtained through correction even when the cut section as well as the wafer module is positioned in a tilted manner.

[0189] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below.

Claims

1. A step of forming an adhesive layer on either the adhesive portion, which is the edge of the wafer substrate, or the corner portion, which is the edge of the carrier substrate; A step of bonding the wafer substrate and the carrier substrate to each other so that the other of the adhesive portion and the corner portion is adhered to the adhesive layer; A step of removing the adhesive layer using a removal solution, cutter or laser provided along the adhesive portion and the edge portion; and A method for bonding and debonding a wafer module, comprising a step of separating the wafer substrate from the carrier substrate as the adhesive layer is removed.

2. In paragraph 1, The above adhesive layer is formed in a circular band shape along the rounded edge of the wafer substrate, A bonding and debonding method for a wafer module, characterized in that the bonding portion where the adhesive layer is formed does not overlap with the mounting portion where the element portion is formed on the wafer substrate.

3. In the first paragraph, after the step of forming an adhesive layer on the adhesive portion, A bonding and debonding method for a wafer module, further comprising a step of forming a support unit between the mounting portion of the wafer substrate and the central portion of the carrier substrate to maintain a gap between the wafer substrate and the carrier substrate.

4. In the step of removing the adhesive layer using the removal solution in paragraph 1, A bonding and debonding method for a wafer module, characterized in that the edge of the wafer module, in which the wafer substrate, the adhesive layer, and the carrier substrate are bonded to each other, is positioned in a chamber section in which the removal solution is stored.

5. In the step of removing the adhesive layer using the removal solution in paragraph 4, With the above wafer module fixed to the rotation unit, A bonding and debonding method for a wafer module, characterized in that the wafer module is rotated while its edge is immersed in the removal solution according to the rotation of the rotation unit.

6. In paragraph 5, A bonding and debonding method for a wafer module, characterized in that the depth at which the wafer module is immersed in the removal solution is equal to the width at which the adhesive layer is formed.

7. In the step of removing the adhesive layer using the removal solution in paragraph 1, A bonding and debonding method for a wafer module, characterized in that the removing solution is sprayed on the edge of the wafer module in which the wafer substrate, the adhesive layer, and the carrier substrate are bonded to each other.

8. In the step of removing the adhesive layer using the removal solution in paragraph 7, The above removal unit sprays the removal solution on at least one side of the wafer module, A method for bonding and debonding a wafer module, characterized in that the above wafer module rotates.

9. In the step of removing the adhesive layer using the cutter in the first paragraph, A method for bonding and debonding a wafer module, characterized in that the tip of the cutter extends into a blade shape and directly induces a break in the adhesive layer with the tip of the blade shape.

10. In the step of removing the adhesive layer using the laser in the first paragraph, A method for bonding and debonding a wafer module, characterized in that a laser is irradiated toward the above adhesive layer.

11. A cutting section that induces a break in the adhesive layer of the wafer module; A sensor unit that obtains information on a first distance to the cut portion and a second distance to the adhesive layer; A calculation unit that calculates information on the relative distance between the end of the cut portion and the adhesive layer based on information on the first distance and the second distance; and An initiator control system including a control unit that controls the cutting unit based on the calculated information and aligns the end of the cutting unit to the adhesive layer.

12. In the 11th paragraph, the sensor part, An initiator control system characterized in that it obtains information on the first distance and the second distance by irradiating a laser onto the surface of the cut portion and the surface of the adhesive layer.

13. In the 12th paragraph, the sensor part, An initiator control system characterized in that it moves horizontally from a first position to a second position along a reference line to obtain information about the first distance and the second distance.

14. In paragraph 13, The above first distance is the distance from the reference line along which the sensor part moves to the upper surface of the cut part, An initiator control system characterized in that the second distance is the distance from the reference line along which the sensor unit moves to the upper surface of the adhesive layer.

15. In paragraph 14, An initiator control system characterized in that the wafer module further includes a wafer formed on the upper or lower surface of the adhesive layer, and a carrier substrate formed on the lower or upper surface of the adhesive layer.

16. In paragraph 15, the second distance is An initiator control system characterized in that it is calculated by performing frequency conversion from a signal generated by a difference in refractive index in the wafer, the adhesive layer, and the carrier substrate.

17. In paragraph 15, the second distance is An initiator control system characterized in that it is calculated based on an interference signal generated through the wafer, the adhesive layer, and the carrier substrate.

18. In the 11th paragraph, the operation unit, An initiator control system characterized in that it calculates information on the relative distance by additionally using information on the thickness of the cut portion and information on the thickness of the adhesive layer, which are previously stored.

19. In paragraph 18, the control unit, An initiator control system characterized in that the end of the cut portion is aligned with the center of the adhesive layer based on information about the thickness of the adhesive layer.

20. In the 11th paragraph, the sensor part, Obtain information about the first distance by measuring the distance to the above-mentioned cut portion at multiple locations, An initiator control system characterized in that the distance to the adhesive layer is measured at multiple locations to obtain information on the second distance.

Images