Semiconductor process chamber and semiconductor process apparatus

Abstract

Provided in the present application are a semiconductor process chamber and a semiconductor process apparatus. The semiconductor process chamber comprises an outer cavity internally provided with a plurality of reaction areas, each of which is provided with a reaction cavity, a bearing device and a sealing assembly, wherein an opening is provided in a bottom end of the reaction cavity; the bearing device comprises a support shaft capable of ascending and descending and a bearing portion for bearing a wafer, the support shaft being arranged at the bottom of the bearing portion, being configured to support the bearing portion, and ascending and descending via the opening between a process position in the reaction cavity and a conveying position located below the reaction cavity; and the sealing assembly is arranged below the bearing portion and is connected to the bearing device, the support shaft penetrates the sealing assembly, the sealing assembly is configured to ascend and descend along with the ascending and descending of the support shaft, and when the support shaft supports the bearing portion to ascend to the process position, the sealing assembly comes into contact with the bottom end of the reaction cavity, so as to seal the opening. The semiconductor process chamber and the semiconductor process apparatus provided in the present invention can improve the sealing stability of the sealing assembly, thereby improving the usage stability of the semiconductor process chamber and the semiconductor process apparatus.

Description

Semiconductor process chambers and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] The deposition rate of the Plasma Enhanced Atomic Layer Deposition (PEALD) process is relatively slow. Developing a process chamber with multiple reaction chambers has become a better solution to increase the productivity of PEALD process equipment.

[0003] An existing process chamber with multiple reaction chambers has a transmission chamber and multiple reaction areas. Each reaction area is provided with a reaction chamber, a carrying device and an elastic sealing bellows. The multiple reaction chambers are arranged at intervals and are respectively connected to the transmission chamber. The carrying device includes a carrying part and a liftable support shaft. The carrying part is used to carry the wafer. The support shaft is arranged at the bottom of the carrying part. The support shaft is used to support the carrying part to descend to the transmission position in the transmission chamber or to rise to the process position in the reaction chamber. When the carrying part descends to the transmission position, the wafer can be transferred. When the carrying part rises to the process position, the semiconductor process of the wafer can be realized. The elastic sealing The bellows is located below the bearing part and surrounds the support shaft, and the bottom of the elastic sealing bellows is connected to the bottom of the transmission chamber. When the bearing part descends to the transmission position, the top of the elastic sealing bellows contacts the bottom of the bearing part, and the elastic sealing bellows is in a compressed state. In the process of the bearing part rising from the transmission position to the process position, the elastic sealing bellows gradually stretches under the action of its own elasticity. When the bearing part rises to the process position, the top of the elastic sealing bellows contacts the bottom of the reaction chamber, sealing the reaction chamber to prevent multiple reaction chambers from being interconnected through the transmission chamber, causing the air flow fields of multiple reaction chambers to interfere with each other.

[0004] However, in actual use, since the top of the elastic sealing bellows will contact the bottom of the reaction chamber during the semiconductor process, the elastic sealing bellows will be affected by the high temperature of the reaction chamber for a long time, causing the elastic force of the elastic sealing bellows to gradually decrease. In addition, the elastic force of the elastic sealing bellows will gradually decrease during the frequent compression and elongation process. In addition, due to the elasticity of the elastic sealing bellows, at the moment when the top of the elastic sealing bellows is separated from the bottom of the reaction chamber, the elastic sealing bellows will jump irregularly, which may affect the contaminated particles in the process chamber and may even cause wafer slippage. In addition, the elastic sealing bellows cannot be used for high-temperature processes of 550°C or above. These situations will lead to a reduction in the sealing effect of the elastic sealing bellows, poor sealing stability, and poor stability in the use of semiconductor process chambers and semiconductor process equipment.

[0005] Summary of the Invention

[0006] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process chamber and semiconductor process equipment, which can improve the sealing stability of the sealing component and improve the use stability of the semiconductor process chamber and semiconductor process equipment.

[0007] To achieve the purpose of the present application, a semiconductor process chamber is provided, comprising an outer chamber having a plurality of reaction areas, each of the reaction areas being provided with a reaction chamber, a carrier device, and a sealing assembly; wherein:

[0008] The bottom end of the reaction chamber has an opening;

[0009] The carrying device includes a carrying portion and a liftable support shaft, wherein the carrying portion is used to carry the wafer, and the support shaft is provided at the bottom of the carrying portion, and is used to support the carrying portion and to be lifted and lowered between the process position in the reaction chamber and the transfer position below the reaction chamber through the opening;

[0010] The sealing assembly is arranged below the bearing portion and connected to the bearing device, and the support shaft passes through the sealing assembly. The sealing assembly is used to rise and fall with the support shaft, and when the support shaft supports the bearing portion to rise to the process position, the sealing assembly contacts the bottom end of the reaction chamber to seal the opening.

[0011] In some embodiments, the sealing assembly is coupled to the support shaft.

[0012] In some embodiments, the support shaft is provided with a mounting portion, the mounting portion surrounding the support shaft;

[0013] The sealing assembly includes a connecting component and an annular sealing body;

[0014] The sealing body surrounds the support shaft, the sealing body is used to seal the opening, and the sealing body has an annular assembly space surrounding the support shaft and used to accommodate the assembly portion;

[0015] The connecting component is used to connect the sealing assembly and the support shaft by connecting the sealing body and the fitting portion.

[0016] In some embodiments, a preset gap is provided between the sealing body and the bearing portion.

[0017] In some embodiments, the sealing body includes: an annular first sealing plate, an annular second sealing plate located on a side of the first sealing plate facing away from the bearing portion and isolated from the first sealing plate, and a side wall located between the first sealing plate and the second sealing plate;

[0018] The first sealing plate is used to seal the opening;

[0019] The side wall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the side wall, and an assembly opening of the assembly space faces the outer peripheral surface of the support shaft.

[0020] In some embodiments, the first sealing plate has a gas channel inside, a side of the first sealing plate facing the bearing portion has a plurality of first gas outlet holes extending through the gas channel, and an inner annular surface of the first sealing plate has a first gas inlet hole communicating with the gas channel;

[0021] An air inlet channel is provided in the support shaft, and the support shaft has a second air outlet hole at a position opposite to the inner annular surface of the first sealing plate, so that the gas in the air inlet channel is transported to the preset gap between the sealing body and the bearing part through the second air outlet hole, the first air inlet hole, the gas channel and the first air outlet hole in sequence.

[0022] In some embodiments, the gas channel includes a plurality of tributaries distributed along the circumferential direction of the first sealing plate and a main airway communicating with the plurality of tributaries;

[0023] The main airway is annular, and a plurality of tributaries are arranged around the main airway, and each tributary extends radially along the first sealing plate;

[0024] The first air inlet is in communication with the main air passage.

[0025] In some embodiments, the carrying device further comprises a plurality of support columns penetrating the carrying portion and being liftable;

[0026] The first sealing plate further has a through hole for each of the support pillars to pass through, and the orthographic projection of the through hole on the bearing portion coincides with the orthographic projection of the first air outlet on the bearing portion.

[0027] In some embodiments, a radial dimension of the first air inlet hole gradually decreases from an end of the first air inlet hole close to the support shaft to an end of the first air inlet hole away from the support shaft.

[0028] In some embodiments, the sealing assembly further includes a first sealing member, the sealing body is provided with an assembly groove, the assembly groove is provided on one side of the sealing body facing the bottom end of the reaction chamber, and is provided along the circumference of the sealing body, the first sealing member is annular, and is assembled in the assembly groove, the first sealing member is used to contact the bottom end of the reaction chamber when the support shaft supports the bearing part to rise to the process position, and seal the opening by sealing between the sealing body and the bottom end of the reaction chamber.

[0029] In some embodiments, a radial dimension of the groove opening of the assembly groove is smaller than a radial dimension of the groove bottom of the assembly groove.

[0030] In some embodiments, a surface of the sealing body facing the supporting portion is arc-shaped, and a distance between the surface of the sealing body facing the supporting portion and the supporting portion gradually increases from the center to the edge of the surface of the sealing body facing the supporting portion.

[0031] In some embodiments, the connecting component is further used to adjust the distance between the sealing body and the assembly portion in the axial direction of the support shaft.

[0032] In some embodiments, the connecting component includes an external threaded component, a middle threaded component and an internal threaded component, the external threaded component has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread, the external threaded component passes through the sealing body to the assembly space, and is threadedly engaged with the sealing body through the first external thread, the middle threaded component has a second external thread, the middle threaded component passes through the interior of the external threaded component, and is threadedly engaged with the first internal thread through the second external thread, the internal threaded component has a third external thread, the internal threaded component passes through the interior of the middle threaded component, and is threadedly engaged with the assembly portion through the third external thread.

[0033] In some embodiments, the pitch of the first external thread is greater than the pitch of the first internal thread.

[0034] In some embodiments, the connecting component also includes a support reinforcement member, which is annular and arranged along the inner circumference of the middle threaded member and is fixedly connected to the middle threaded member. One end of the support reinforcement member is against the assembly part, and the other end is against the head of the internal threaded member.

[0035] In some embodiments, there are multiple connecting components, and the multiple connecting components are spaced apart in the circumferential direction of the sealing body.

[0036] The present application also provides a semiconductor process equipment, including a wafer transfer device and the semiconductor process chamber provided in the present application, wherein the wafer transfer device is located in the external cavity and is used to take and place wafers to the carrier when each carrier is located in the transfer position.

[0037] This application has the following beneficial effects:

[0038] The semiconductor process chamber provided by the present application connects the sealing assembly provided in each reaction area with the supporting device provided in each reaction area, so that the sealing assembly can be raised and lowered along with the support shaft. In this way, when the supporting portion supported by the support shaft rises to the process position, the sealing assembly can contact the bottom end of the reaction chamber to seal the opening at the bottom end of the reaction chamber, thereby avoiding interference between multiple reaction chambers during the semiconductor process, making multiple reaction chambers independent of each other, and thus improving the consistency and stability of the semiconductor process of wafers in multiple reaction chambers. Since the sealing assembly is connected to the supporting device and can be raised and lowered along with the support shaft, compared with the prior art, the sealing assembly does not need to have an elastic expansion and contraction function itself, that is, there is no need to adopt the elastic sealing bellows of the prior art, thereby avoiding the problems caused by the reduced elastic force, irregular jumping and inability to be applied to high-temperature processes (for example, 550°C and above) of the elastic bellows, thereby improving the sealing stability of the sealing assembly and improving the use stability of the semiconductor process chamber and semiconductor process equipment.

[0039] The semiconductor process equipment provided by the present application, with the help of the semiconductor process chamber provided by the present application, can avoid mutual interference between multiple reaction chambers when performing semiconductor processes, so that multiple reaction chambers can be independent of each other, thereby improving the consistency and stability of semiconductor processes performed on wafers in multiple reaction chambers, and can avoid problems caused by the reduction of elastic force, irregular jumping and inability to be applicable to high-temperature processes (for example, 550°C and above) of the elastic bellows, thereby improving the sealing stability of the sealing component and improving the stability of use of the semiconductor process chamber and the semiconductor process equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a schematic structural diagram of a process chamber provided by an embodiment of the present application when a carrier portion is located at a process position;

[0041] FIG2 is a schematic structural diagram of a process chamber provided by an embodiment of the present application when the carrier is located in a transfer position;

[0042] FIG3 is a schematic top view of a three-dimensional structure of an outer cavity provided in an embodiment of the present application;

[0043] FIG4 is an enlarged structural schematic diagram of a reaction chamber when the carrier portion is located at a process position according to an embodiment of the present application;

[0044] FIG5 is an enlarged structural diagram of the sealing portion between the sealing assembly and the reaction chamber provided in an embodiment of the present application;

[0045] FIG6 is a schematic diagram of the three-dimensional structure of a support shaft provided in an embodiment of the present application;

[0046] FIG7 is a schematic diagram of a front cross-sectional structure of a support shaft provided in an embodiment of the present application;

[0047] FIG8 is a schematic diagram of the three-dimensional structure of a sealing assembly provided in an embodiment of the present application;

[0048] FIG9 is a schematic diagram of the three-dimensional structure of the connecting body provided in an embodiment of the present application;

[0049] FIG10 is a bottom-view schematic diagram of the three-dimensional structure of the sealing assembly and the support shaft provided in an embodiment of the present application;

[0050] FIG11 is a schematic diagram of a three-dimensional cross-sectional structure of a connecting member provided in an embodiment of the present application;

[0051] FIG12 is a schematic diagram of a top cross-sectional structure of a connection split body provided in an embodiment of the present application;

[0052] FIG13 is a schematic diagram of a partial front cross-sectional structure of a sealing body provided in an embodiment of the present application;

[0053] FIG14 is a schematic diagram of a three-dimensional cross-sectional structure of a flow-uniform ring provided in an embodiment of the present application;

[0054] FIG15 is a schematic diagram of a three-dimensional cross-sectional structure of a lower exhaust ring provided in an embodiment of the present application;

[0055] FIG16 is a schematic diagram of a front cross-sectional structure of a connecting component provided by an embodiment of the present application, which is respectively connected to a sealing body and an assembly portion;

[0056] FIG17 is a schematic diagram of the three-dimensional structure of a connecting component provided in an embodiment of the present application;

[0057] FIG18 is a schematic diagram of a front cross-sectional structure of a connecting component provided in an embodiment of the present application.

[0058] Description of reference numerals:

[0059] 1-External cavity; 11-Wafer transfer device; 111-Transfer part; 12-Wafer transfer port; 2-Reaction cavity; 3-Carrying device; 31-Carrying part; 311-Through hole; 32-Support shaft; 321-Inlet channel; 322-Inlet port; 323-Second outlet port; 324-Assembly part; 4-Sealing assembly; 41-Assembly groove; 42-Connector; 421-Connection through hole; 43-Connection split body; 431-Threaded connection hole; 432-Main air channel; 433-Branch air channel; 434-First outlet port; 435-First air inlet port; 436-Assembly space; 437-Through hole; 44-Second Sealing member; 451-first sealing plate; 451a-annular protrusion; 452-second sealing plate; 453-side wall; 51-uniform flow ring; 511-uniform flow port; 52-upper exhaust ring; 53-lower exhaust ring; 531-outer ring body; 532-inner ring body; 533-connecting ring body; 534-exhaust port; 535-exhaust port; 54-exhaust space; 6-connecting component; 61-external threaded member; 62-middle threaded member; 63-internal threaded member; 64-support reinforcement member; 71-support column; 72-support member; 81-lifting drive source; 82-drive source; 83-external air pipe; 9-upper electrode structure. DETAILED DESCRIPTION

[0060] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process chamber and semiconductor process equipment provided by the present application are described in detail below with reference to the accompanying drawings.

[0061] As shown in Figures 1 and 2, an embodiment of the present application provides a semiconductor process chamber, including an external cavity 1, wherein the external cavity 1 has multiple reaction areas (two reaction areas are used as examples in Figures 1 and 2), and each reaction area is provided with a reaction cavity 2, a carrying device 3 and a sealing assembly 4; wherein: the bottom end of the reaction cavity 2 has an opening; the carrying device 3 includes a carrying portion 31 and a liftable support shaft 32, the carrying portion 31 is used to carry a wafer, the support shaft 32 is arranged at the bottom of the carrying portion 31, and is used to support the carrying portion 31 and rise and fall between the process position of the reaction cavity 2 and the transfer position located below the reaction cavity 2 through the opening; the sealing assembly 4 is arranged below the carrying portion 31 and is connected to the carrying device 3, and the support shaft 32 passes through the sealing assembly 4, the sealing assembly 4 is used to rise and fall with the support shaft 32, and when the support shaft 32 supports the carrying portion 31 to rise to the process position, it contacts the bottom end of the reaction cavity 2 to seal the opening, so that a sealed space is formed between the sealing assembly 4 and the reaction cavity 2.

[0062] The semiconductor process chamber provided in the embodiment of the present application connects the sealing assembly 4 provided in each reaction area with the carrying device 3 provided in each reaction area, so that the sealing assembly 4 can be raised and lowered along with the support shaft 32. In this way, when the support shaft 32 supports the carrying part 31 to rise to the process position, the sealing assembly 4 can contact the bottom end of the reaction chamber 2 to seal the opening at the bottom end of the reaction chamber 2, thereby avoiding interference between the multiple reaction chambers 2 during the semiconductor process, making the multiple reaction chambers 2 independent of each other, and thus improving the consistency and stability of the semiconductor process of the wafers in the multiple reaction chambers 2. Since the sealing assembly 4 is connected to the carrying device 3 and can be raised and lowered along with the support shaft 32, compared with the prior art, the sealing assembly 4 does not need to have an elastic expansion and contraction function itself, that is, there is no need to adopt the elastic sealing bellows of the prior art, thereby avoiding the problems caused by the reduced elastic force, irregular jumping and inability to be applied to high-temperature processes (for example, 550°C and above) of the elastic bellows, thereby improving the sealing stability of the sealing assembly 4 and improving the use stability of the semiconductor process chamber and semiconductor process equipment.

[0063] In some embodiments, the sealing assembly 4 is disposed below the bearing portion 31 and is fixed relative to the support shaft 32 so as to be able to rise and fall with the support shaft 32. The sealing assembly 4 is used to contact the bottom end of the reaction chamber 2 when the support shaft 32 supports the bearing portion 31 to rise to the process position, so as to seal the opening and form a sealed space between the sealing assembly 4 and the reaction chamber 2.

[0064] For example, as shown in Figures 1 to 3, the outer cavity 1 may have four reaction areas, the number of reaction chambers 2, the number of carriers 3, and the number of sealing assemblies 4 may all be four, and each reaction area may be provided with a reaction chamber 2, a carrier 3, and a sealing assembly 4. In some embodiments, as shown in Figure 3, a wafer transfer port 12 may be provided on one side wall of the outer cavity 1, and a rotatable wafer transfer device 11 may be provided in the outer cavity 1. The wafer transfer device 11 may have four transfer parts 111. In some embodiments, the support shaft 32 may be connected to a lifting drive source 81, which is used to provide a lifting drive force to drive the support shaft 32 to move up and down.

[0065] During the semiconductor process, the robot outside the outer cavity 1 can transfer the wafer into the outer cavity 1 through the transfer port 12. At this time, the four carrying parts 31 can all be located in the transfer position. At this time, each support column 71 is higher than the carrying part 31. The wafer transfer device 11 can rotate so that each transfer part 111 is located in the position corresponding to the transfer port 12 in turn to receive the wafer transferred to the outer cavity 1 through the transfer port 12 by the robot outside the outer cavity 1, and then rotate the transfer part 111 carrying the wafer to the top of the corresponding carrying part 31, and then lower each transfer part 111 to transfer the carried wafer to each support column 71 and support it by each support column 71. Afterwards, the lifting drive source 81 can provide an upward driving force to drive the support shaft 32 to rise. The support shaft 32 supports the bearing part 31 to rise through the opening to the process position in the reaction chamber 2 (as shown in Figure 1). In the process of the bearing part 31 rising from the transmission position to the process position, the bearing part 31 will hold up the wafers on each support column 71 and support the wafer to rise to the process position. The sealing component 4 can rise with the rise of the support shaft 32, and when the bearing part 31 rises to the process position, it contacts the bottom end of the reaction chamber 2 to seal the opening and achieve sealing of the reaction chamber 2, so that the semiconductor process can be performed on the wafer in a sealed environment, and then the interference between the multiple reaction chambers 2 can be avoided in the semiconductor process, so that the multiple reaction chambers 2 can be independent of each other, thereby improving the consistency and stability of the semiconductor process (for example, deposition of film layers) of the wafers in the multiple reaction chambers 2.

[0066] After the semiconductor process is completed, the lifting drive source 81 can provide a downward driving force to drive the support shaft 32 to descend. The support shaft 32 supports the carrier 31 to descend through the opening to the transfer position located below the reaction chamber 2 (as shown in Figure 2). In the process of the carrier 31 descending from the process position to the transfer position, the sealing component 4 can descend with the descent of the support shaft 32, thereby separating from the bottom end of the reaction chamber 2 and canceling the seal of the reaction chamber 2. When the carrier 31 descends to the transfer position, each support column 71 is higher than the carrier 31 to hold up the wafer on the carrier 31 that has completed the process. After that, the wafer is transferred The device 11 can rotate the four transfer parts 111 to between the four carrying parts 31 and the wafers carried by each support column 71, and then transfer the four wafers from each support column 71 to the four transfer parts 111 by raising each transfer part 111; then, the wafer transfer device 11 can rotate the each transfer part 111 to be located in the position corresponding to the transfer port 12 in turn, so that the robot in the outer chamber 1 can take out the wafer from the transfer part 111 corresponding to the transfer port 12, and then the robot can transfer the four wafers in turn from the outer chamber 1 through the transfer port 12 to the outside of the process chamber.

[0067] It should be noted that the number of reaction areas, the number of reaction chambers 2, the number of carriers 3, the number of sealing assemblies 4 and the number of transmission parts 111 are not limited to four. For example, the number of reaction areas, the number of reaction chambers 2, the number of carriers 3, the number of sealing assemblies 4 and the number of transmission parts 111 can all be two, three, five or more.

[0068] In some embodiments, the number of lifting drive sources 81 can be the same as the number of support shafts 32, and the lifting drive sources 81 can be provided in a one-to-one correspondence with the support shafts 32. In this way, each lifting drive source 81 can independently drive the corresponding supporting portion 31 to rise and fall, thereby improving the flexibility of controlling the rise and fall of each supporting portion 31.

[0069] In some embodiments, the lifting drive source 81 can be set outside the outer cavity 1 and located below the outer cavity 1. The support shaft 32 can pass through the bottom of the outer cavity 1 and connect with the lifting drive source 81, and the support shaft 32 can be lifted and lowered relative to the outer cavity 1.

[0070] In some embodiments, a driving source 82 may be further provided outside the outer cavity 1, and the wafer transfer device 11 may pass through the bottom of the outer cavity 1 and be connected to the driving source 82, and the wafer transfer device 11 can rotate and rise and fall relative to the outer cavity 1. The driving source 82 is used to provide rotational driving force and lifting driving force to the wafer transfer device 11, so as to drive the wafer transfer device 11 to rotate and rise and fall in the outer cavity 1.

[0071] As shown in FIG. 1 , FIG. 2 and FIG. 4 , in one embodiment of the present application, the sealing assembly 4 can be connected to the support shaft 32 .

[0072] That is, by connecting the sealing assembly 4 to the support shaft 32 , the sealing assembly 4 can be arranged below the bearing portion 31 and fixed relative to the support shaft 32 , and the sealing assembly 4 can be raised and lowered along with the support shaft 32 .

[0073] As shown in Figures 1, 2, 4, 6, and 7, in one embodiment of the present application, the support shaft 32 passes through the sealing assembly 4. Specifically, the support shaft 32 may be provided with an assembly portion 324 that surrounds the support shaft 32. The sealing assembly 4 may include a connecting component 6 and an annular sealing body. The sealing body surrounds the support shaft 32, is used to seal the opening, and has an annular assembly space 436 that surrounds the support shaft 32 and is used to accommodate the assembly portion 324. The connecting component 6 is used to connect the sealing assembly 4 to the support shaft 32 by connecting the sealing body and the assembly portion 324.

[0074] That is, the sealing body surrounds the support shaft 32, and the assembly portion 324 surrounding the support shaft 32 is accommodated in the assembly space 436 of the sealing body. The connecting component 6 can connect the sealing body and the assembly portion 324. The connection between the sealing body and the assembly portion 324 can realize the connection between the sealing assembly 4 and the support shaft 32. The sealing opening of the sealing assembly 4 can be achieved by sealing the opening of the sealing body.

[0075] In some embodiments, when the sealing body seals the opening, there is a preset gap between the sealing body and the supporting part 31. Such a design allows the supporting part 31 to heat the wafer after the sealing body seals the opening and the supporting part 31 rises to the process position. For example, the supporting part 31 can heat the wafer to 550°C. By providing a preset gap between the sealing body and the supporting part 31 when sealing the opening, the heat transferred from the supporting part 31 to the sealing body can be reduced, thereby reducing the probability of the sealing body being damaged due to high temperature, thereby increasing the service life of the sealing component 4 and improving the stability of the sealing component 4 in sealing the reaction chamber 2, thereby improving the stability of the semiconductor process chamber and the stability of the semiconductor process.

[0076] As shown in Figures 9-12, in some embodiments, the sealing body may include a connector 42 and multiple connecting parts 43, each connecting part 43 is arc-shaped, and the multiple connecting parts 43 are combined to form a ring. The connector 42 is ring-shaped, and the multiple connecting parts 43 are connected by the connector 42.

[0077] As shown in Figures 8 and 10, for example, the number of connecting parts 43 can be two, each connecting part 43 is semicircular, the two connecting parts 43 are located on both sides of the support shaft 32 respectively, and the two connecting parts 43 are combined into a circular ring shape. The connecting body 42 is circular and is respectively connected to the two connecting parts 43, thereby connecting the two connecting parts 43 together.

[0078] However, the number of the connecting parts 43 is not limited thereto, for example, the number of the connecting parts 43 can also be three or more. The shape of the combination of the connecting parts 43 and the shape of the connecting body 42 are not limited thereto.

[0079] As shown in Figures 4, 5, 8, 9, 11-13 and 16, in one embodiment of the present application, the sealing body may include: an annular first sealing plate 451, an annular second sealing plate 452 located on the side of the first sealing plate 451 away from the bearing portion 31 and isolated from the first sealing plate 451, and a side wall 453 located between the first sealing plate 451 and the second sealing plate 452; the first sealing plate 451 is used to seal the opening, and the side wall 453 connects the first sealing plate 451 and the second sealing plate 452 to form an assembly space 436 between the first sealing plate 451, the second sealing plate 452 and the side wall 453, and the assembly port of the assembly space 436 faces the outer peripheral surface of the support shaft 32.

[0080] That is, the first sealing plate 451 and the second sealing plate 452 are opposite and spaced apart from each other, and the side wall 453 is disposed between the first sealing plate 451 and the second sealing plate 452. Both the first sealing plate 451 and the second sealing plate 452 are annular so as to surround the support shaft 32. The side wall 453 is annular and disposed circumferentially of the first sealing plate 451 and the second sealing plate 452. An annular assembly space 436 can be formed by the space between the first sealing plate 451, the second sealing plate 452, and the side wall 453. The support shaft 32 can pass through the assembly opening of the assembly space 436, thereby allowing the support shaft 32 to penetrate the seal assembly 4. The sealing opening of the sealing body can be sealed by the first sealing plate 451.

[0081] As shown in Figures 4 to 9 and Figures 11 to 13, in one embodiment of the present application, the interior of the first sealing plate 451 may have a gas channel, and the first sealing plate 451 has a plurality of first air outlet holes 434 that penetrate into the gas channel on the side facing the bearing portion 31, and the inner annular surface of the first sealing plate 451 has a first air inlet hole 435 that is connected to the gas channel; an air inlet channel 321 is provided in the support shaft 32, and the support shaft 32 may have a second air outlet hole 323 at a position opposite to the inner annular surface of the first sealing plate 451, so that the gas in the air inlet channel 321 is transported to the preset gap between the sealing body and the bearing portion 31 through the second air outlet hole 323, the first air inlet hole 435, the gas channel and the first air outlet hole 434 in sequence.

[0082] That is, the first sealing plate 451 is provided with a gas channel, a first gas inlet hole 435, and a plurality of first gas outlet holes 434. The gas channel is provided within the first sealing plate 451. One end of the first gas inlet hole 435 is located on the inner annular surface of the first sealing plate 451, and the other end is connected to the gas channel. One end of the first gas outlet hole 434 is located on the side of the first sealing plate 451 facing the bearing portion 31, and the other end is connected to the gas channel. The support shaft 32 is provided with an gas inlet channel 321 and a second gas outlet hole 323. The gas inlet channel 321 is provided within the support shaft 32. One end of the second gas outlet hole 323 is connected to the gas inlet channel 321, and the other end is opposite the end of the first gas inlet hole 435 located on the inner annular surface of the first sealing plate 451. In actual application, the gas in the air inlet channel 321 can first enter the second air outlet 323, then enter the first air inlet 435 through the second air outlet 323, then enter the gas channel through the first air inlet 435, then enter the multiple first air outlets 434 through the gas channel, and then enter the above-mentioned preset gap through the multiple first air outlets 434.

[0083] This design is because during the semiconductor process, the reaction gas used for the semiconductor process in the reaction chamber 2 may flow toward the bottom of the carrier 31 and gather and deposit on the lower surface of the carrier 31, resulting in particles being generated in the reaction chamber 2 during the semiconductor process, affecting the semiconductor process. By supplying gas to the above-mentioned preset gap, the preset gap can have a certain pressure to form a stable environment, thereby reducing the possibility of the reaction gas flowing toward the bottom of the carrier 31, and then reducing the particles generated in the reaction chamber 2 due to the accumulation and deposition of the reaction gas, thereby improving the semiconductor process.

[0084] In some embodiments, the gas may include nitrogen or an inert gas.

[0085] As shown in FIG. 7 , in some embodiments, the support shaft 32 may be further provided with an air inlet 322 , one end of the air inlet 322 being in communication with the air inlet channel 321 , and the other end of the air inlet 322 being in communication with the air source.

[0086] In actual applications, a gas source can provide gas. The gas source can be set outside the outer cavity 1 and located below the outer cavity 1 to avoid the gas source affecting the environment inside the semiconductor process chamber. The gas provided by the gas source can first enter the gas inlet 322 and then enter the gas inlet channel 321 through the gas inlet 322.

[0087] As shown in FIG. 1 and FIG. 2 , in some embodiments, the air inlet 322 may be connected to an air source via an external air pipe 83 .

[0088] As shown in Figures 4, 5, 8, 9, 11, 12 and 13, in one embodiment of the present application, the above-mentioned gas channel may include a plurality of branch airways 433 distributed circumferentially along the first sealing plate 451 and a main airway 432 connected to the plurality of branch airways 433; the main airway 432 is annular, and the plurality of branch airways 433 are arranged around the main airway 432, and each branch airway 433 extends radially along the first sealing plate 451; the first air inlet 435 is connected to the main airway 432.

[0089] In actual applications, multiple first air outlet holes 434 may be distributed along the extension direction of each air branch 433. One end of each first air outlet hole 434 that is connected to the gas channel may be connected to the air branch 433. In other words, the connection between the first air outlet hole 434 and the gas channel may be achieved by connecting with the air branch 433. In this way, the gas passing through the first air inlet hole 435 may first enter the main air channel 432, then enter the multiple air branches 433 through the main air channel 432, then enter the multiple first air outlet holes 434 through the multiple air branches 433, and finally enter the preset gap through the multiple first air outlet holes 434. In other words, the gas in the first air inlet hole 435 may be transported to the preset gap through the main air channel 432, the multiple air branches 433, and the multiple first air outlet holes 434 in sequence.

[0090] In some embodiments, the plurality of branch passages 433 may be evenly spaced along the arc of the connecting body 43. This may improve the uniformity of the gas delivered to the preset gap.

[0091] In some embodiments, the plurality of first gas outlet holes 434 may be evenly spaced and distributed in the extension direction of the branch channel 433. This can improve the uniformity of the gas delivered to the preset gap.

[0092] As shown in Figures 1, 2, 4 and 8, in one embodiment of the present application, the carrying device 3 may also include a plurality of support columns 71 that pass through the carrying portion 31 and can be raised and lowered; the first sealing plate 451 also has a through hole 437 for each support column 71 to pass through, and the orthographic projection of the through hole 437 on the carrying portion 31 coincides with the orthographic projection of the first air outlet 434 on the carrying portion 31.

[0093] In actual application, when the carrier 31 descends to the transfer position, the tops of the multiple support pillars 71 can protrude relative to the top surface of the carrier 31. In this way, after the wafer is transferred to the top of the carrier 31, the wafer can be placed on the multiple support pillars 71. Afterwards, the carrier 31 rises to lift the wafer on the multiple support pillars 71, and then continues to rise to the process position, it can carry the multiple support pillars 71 up together. When the semiconductor process is completed, the carrier 31 descends, and it can carry the multiple support pillars 71 down together. During the process of the carrier 31 descending to the transfer position, the multiple support pillars 71 can gradually rise relative to the carrier 31 until the tops of the multiple support pillars 71 protrude relative to the top surface of the carrier 31, thereby lifting the wafer on the carrier 31, and then the wafer can be removed from the multiple support pillars 71.

[0094] In some embodiments, the support column 71 may be a pin.

[0095] As shown in FIG. 7 , in some embodiments, a plurality of through holes 311 may be provided on the bearing portion 31 . The plurality of through holes 311 are provided in one-to-one correspondence with the plurality of via holes 437 . The corresponding through holes 311 and via holes 437 are used for the support columns 71 to pass through.

[0096] In some embodiments, the through hole 437 may penetrate the bronchus 433 .

[0097] As shown in FIG. 1 and FIG. 2 , in some embodiments, a plurality of support members 72 are provided at the bottom of the outer cavity 1 . The plurality of support members 72 are distributed at intervals along a circumferential direction and are provided in one-to-one correspondence with the plurality of support columns 71 .

[0098] In actual application, when the carrying part 31 is in the transfer position, the multiple support columns 71 can be supported one by one by the multiple support members 72, so that the tops of the multiple support columns 71 can protrude relative to the top surface of the carrying part 31. When the carrying part 31 descends from the process position until the multiple support columns 71 and the support members 72 are against each other, as the carrying part 31 continues to descend, the multiple support columns 71 are supported by the support members 72 and no longer continue to descend with the carrying part 31. The multiple support columns 71 gradually rise relative to the carrying part 31 until the tops of the multiple support columns 71 protrude relative to the top surface of the carrying part 31.

[0099] In one embodiment of the present application, the material of the support column 71 and the material of the support member 72 can both be ceramic.

[0100] On the one hand, this can prevent the materials of the support column 71 and the support member 72 from polluting the environment in the semiconductor process chamber, and on the other hand, it can prevent the support member 72 from being dented due to repeated impacts of the support column 71, thereby increasing the service life of the support member 72.

[0101] In one embodiment of the present application, the radial dimension of the first air inlet hole 435 may gradually decrease from an end of the first air inlet hole 435 close to the support shaft 32 to an end of the first air inlet hole 435 away from the support shaft 32 .

[0102] That is to say, the radial dimension of the end of the first air inlet hole 435 close to the support shaft 32 is larger than the radial dimension of the end of the first air inlet hole 435 away from the support shaft 32, and the radial dimension of the first air inlet hole 435 can gradually decrease from the end of the first air inlet hole 435 close to the support shaft 32 to the end of the first air inlet hole 435 away from the support shaft 32, forming a shape similar to a trumpet mouth, so that the first air inlet hole 435 can have a larger range for the gas flowing out through the second air outlet 323 to enter, so that the gas flowing out through the second air outlet 323 can more easily enter the first air inlet hole 435.

[0103] In one embodiment of the present application, as shown in Figures 4 and 5, the sealing assembly 4 may further include a first sealing member (not shown in the figures), and the sealing body is provided with an assembly groove 41. The assembly groove 41 is provided on one side of the sealing body facing the bottom end of the reaction chamber 2 and is provided along the circumference of the sealing body. The first sealing member is annular and is assembled in the assembly groove 41. The first sealing member is used to contact the bottom end of the reaction chamber 2 when the support shaft 32 supports the bearing part 31 to rise to the process position, and seal the opening by sealing between the sealing body and the bottom end of the reaction chamber 2.

[0104] That is, when the support shaft 32 supports the bearing portion 31 to rise to the process position, the first sealing member can contact the bottom end of the reaction chamber 2, sealing the sealing body and the bottom end of the reaction chamber 2. By sealing the sealing body and the bottom end of the reaction chamber 2 with the first sealing member, the opening can be sealed, thereby enabling the sealing assembly 4 to seal the opening. The first sealing member can be restrained in the assembly groove 41 by means of the assembly groove 41, thereby preventing the first sealing member from moving freely on the side of the sealing body facing the bottom end of the reaction chamber 2, thereby improving the stability of the first sealing member in sealing the sealing body and the bottom end of the reaction chamber 2, and improving the stability of the sealing assembly 4 in sealing the opening.

[0105] In some embodiments, as shown in Figures 4 and 5, an annular protrusion 451a can be provided on the sealing body. The annular protrusion 451a is annular and arranged along the circumference of the sealing body. The annular protrusion 451a and the connector 42 can serve as the two annular side walls of the assembly groove 41.

[0106] In some embodiments, as shown in Figures 5 and 9, the outer diameter of the connecting body 42 can be smaller than the outer diameter of the connecting body 43, a connecting through hole 421 can be provided on the connecting body 42, and a threaded connecting hole 431 can be provided on the connecting body 43. A threaded connector (not shown in the figure) passes through the connecting through hole 421 and is threadedly connected to the threaded connecting hole 431, so that the connecting body 42 and the connecting body 43 can be connected through the threaded connector.

[0107] In some embodiments, the connecting through-hole 421 may be a countersunk hole. This prevents the threaded connector from protruding relative to the connecting through-hole 421 and interfering with the bottom of the reaction chamber 2, thereby affecting the contact between the first sealing member and the bottom of the reaction chamber 2. This improves the stability of the first sealing member in sealing the sealing body and the bottom of the reaction chamber 2, and further improves the stability of the sealing assembly 4 in sealing the opening.

[0108] In some embodiments, the first sealing member may be a flexible sealing ring.

[0109] As shown in FIG. 4 and FIG. 5 , in some embodiments, the bronchial passage 433 may extend to a position close to the inner side of the threaded connection hole 431 .

[0110] As shown in Figures 11 to 13 , in other embodiments, the air duct 433 may extend to below the assembly groove 41 where the first sealing member is located. Furthermore, the air duct 433 may also extend to the outer peripheral edge of the connecting body 43 .

[0111] As shown in FIG13 , in some embodiments, the air duct 433 can extend below the assembly groove 41, so that the air duct 433 can extend below the first seal. This allows gas to flow below the first seal, thereby allowing the gas to cool the first seal during the semiconductor process, thereby reducing the possibility of the first seal failing due to high temperature and increasing the service life of the first seal. This can improve the stability of the first seal in sealing between the sealing body and the bottom end of the reaction chamber 2, thereby improving the stability of the sealing assembly 4 in sealing the opening. It should be noted that the portion of the air duct 433 located below the first seal may not be provided with the first air outlet 434. In addition, the threaded connection hole 431 can pass through the bottom of the air duct 433 to the lower surface of the connecting body 43. In this case, the threaded connector (not shown) passes through the connecting through hole 421 and the air duct 433, and is threadedly connected to the threaded connection hole 431, so that the connecting body 42 and the connecting body 43 can be connected via the threaded connector.

[0112] As shown in FIG. 5 , in one embodiment of the present application, the radial dimension of the groove opening of the assembly groove 41 may be smaller than the radial dimension of the groove bottom of the assembly groove 41 .

[0113] This design is because in actual application, the first seal may adhere to the bottom end of the reaction chamber 2 due to the high temperature of the reaction chamber 2. By making the radial dimension of the notch of the assembly groove 41 smaller than the radial dimension of the groove bottom of the assembly groove 41, the first seal can be limited in the assembly groove 41 with the help of the notch of the smaller assembly groove 41, thereby reducing the possibility of the first seal being pulled out of the assembly groove 41 due to adhesion to the bottom end of the reaction chamber 2, thereby improving the stability of the first seal in sealing between the sealing body and the bottom end of the reaction chamber 2, and improving the stability of the sealing component 4 in sealing the opening.

[0114] In some embodiments, the radial dimension of the assembly groove 41 may gradually increase from the notch of the assembly groove 41 to the notch of the assembly groove 41 .

[0115] As shown in Figures 4, 5 and 13, in one embodiment of the present application, the side of the sealing body facing the bearing portion 31 can be arc-shaped, and the distance between the side of the sealing body facing the bearing portion 31 and the bearing portion 31 gradually increases from the center to the edge of the side of the sealing body facing the bearing portion 31.

[0116] This can facilitate the gas entering the preset gap to flow from the center to the edge of the preset gap, avoid the gas entering the preset gap from gathering in the center of the preset gap, and enable the gas entering the preset gap to be quickly discharged from the edge of the reaction chamber 2.

[0117] In one embodiment of the present application, the connecting component 6 can also be used to adjust the distance between the sealing body and the assembly portion 324 in the axial direction of the support shaft 32 .

[0118] This design is based on the fact that, in actual applications, depending on the requirements of the semiconductor process, the carrier portion 31 may need to be located at different heights within the reaction chamber 2. In other words, the carrier portion 31 may need to be located at process positions at different heights. By adjusting the spacing between the sealing body and the assembly portion 324 in the axial direction of the support shaft 32 using the connecting member 6, the spacing between the sealing body and the carrier portion 31 can be adjusted. This allows the sealing body to still contact the bottom of the reaction chamber 2 and seal the opening even when the height of the process position at which the carrier portion 31 is required to be located changes. For example, when the height of the process position at which the carrier portion 31 is required to be located increases, the spacing between the sealing body and the carrier portion 31 can be increased so that the sealing body still contacts the bottom of the reaction chamber 2 and seals the opening. When the height of the process position at which the carrier portion 31 is required to be located decreases, the spacing between the sealing body and the carrier portion 31 can be decreased so that the sealing body still contacts the bottom of the reaction chamber 2 and seals the opening.

[0119] Moreover, in one embodiment of the present application, the radial dimension of the first air inlet hole 435 can be gradually reduced from one end of the first air inlet hole 435 close to the support shaft 32 to the end of the first air inlet hole 435 away from the support shaft 32, forming a shape similar to a trumpet mouth. In this way, when the sealing body moves axially along the support shaft 32, the first air inlet hole 435 can still be opposite to the second air outlet hole 323.

[0120] As shown in Figures 16-18, in one embodiment of the present application, the connecting component 6 may include an external threaded component 61, a middle threaded component 62 and an internal threaded component 63. The external threaded component 61 has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread. The external threaded component 61 penetrates the sealing body into the assembly space 436 and is threadedly engaged with the sealing body through the first external thread. The middle threaded component 62 has a second external thread. The middle threaded component 62 penetrates the interior of the external threaded component 61 and is threadedly engaged with the first internal thread through the second external thread. The internal threaded component 63 has a third external thread. The internal threaded component 63 penetrates the interior of the middle threaded component 62 and is threadedly engaged with the assembly portion 324 through the third external thread.

[0121] In actual application, taking the example of clockwise rotation of the external threaded member 61 for tightening and counterclockwise rotation of the external threaded member 61 for loosening, when the height of the sealing body needs to be raised, the external threaded member 61 can be loosened by counterclockwise rotation. Under the action of the second external thread and the first internal thread, the middle threaded member 62 tends to move upward. Since the upper end of the middle threaded member 62 abuts against the assembly portion 324, the internal threaded member 63 remains stationary due to the downward reaction force exerted by the assembly portion 324, thereby lowering the external threaded member 61. At the same time, under the action of the first external thread and the sealing body thread, the height of the assembly portion 324 in the assembly space 436 is relatively lowered, that is, the height of the sealing body is raised. When it is necessary to lower the height of the sealing body, the external threaded member 61 can be rotated clockwise to tighten the external threaded member 61. Under the cooperation of the second external thread and the first internal thread, the middle threaded member 62 has a downward trend. Since the lower end of the middle threaded member 62 abuts against the screw head of the internal threaded member 63 (as shown in Figure 16) or the step portion on the inner peripheral wall of the external threaded member 61 (as shown in Figure 18), the internal threaded member 63 remains stationary due to the upward reaction force exerted by it, thereby causing the external threaded member 61 to rise. At the same time, under the cooperation of the first external thread and the sealing body thread, the height of the assembly portion 324 in the assembly space 436 is relatively increased, that is, the height of the sealing body is lowered. It is easy to understand that the external threaded member 61 in Figure 16 is in a tightened state and cannot continue to rise. In addition, in actual application, it may happen that the internal threaded member 63 is not tightened into the threaded hole of the assembly portion 324. At this time, there is a certain distance between the lower end of the middle threaded member 62 and the screw head of the internal threaded member 63 (as shown in FIG16 ) or the step portion on the inner peripheral wall of the external threaded member 61 (as shown in FIG18 ). In this case, the external threaded member 61 can be rotated clockwise to make it rise. At the same time, under the cooperation of the second external thread and the first internal thread, the middle threaded member 62 moves downward until the middle threaded member 62 is The lower end of the middle threaded part 62 abuts against the screw head of the internal threaded part 63 (as shown in FIG16 ) or against the step portion on the inner peripheral wall of the external threaded part 61 (as shown in FIG18 ), so that there is a certain distance between the upper end of the middle threaded part 62 and the assembly portion 324, and a certain adjustment amount is reserved for the subsequent clockwise rotation of the internal threaded part 63 to make it rise and drive the middle threaded part 62 to rise synchronously. After that, the internal threaded part 63 can be rotated clockwise to tighten the internal threaded part 63 so that it is screwed into the threaded hole of the assembly portion 324.

[0122] As shown in Figures 16 and 18 , in one embodiment of the present application, the pitch of the first external thread can be greater than the pitch of the first internal thread. This allows for fine-tuning of the internally threaded member 63. Specifically, because the pitch of the first internal thread is relatively small, the height of the externally threaded member 61 remains substantially unchanged when the internally threaded member 63 is rotated. This allows for fine-tuning of the internally threaded member 63 without substantially affecting the height of the sealing body.

[0123] As shown in Figures 16 and 18, in one embodiment of the present application, the connecting component 6 may further include a support reinforcement member 64. The support reinforcement member 64 is annular and is arranged along the inner circumference of the middle threaded member 62. It is fixedly connected to the middle threaded member 62, and one end of the support reinforcement member 64 abuts against the assembly portion 324, and the other end abuts against the head of the internal threaded member 63. The support reinforcement member 64 can enhance the support for the internal threaded member 63.

[0124] As shown in FIG. 10 and FIG. 16 , in one embodiment of the present application, there may be multiple connecting components 6 , and the multiple connecting components 6 are spaced apart in the circumferential direction of the sealing body.

[0125] With the help of multiple connecting parts 6, the sealing body and the assembly part 324 can be connected from multiple positions on the circumference of the sealing body, thereby improving the stability of the connection between the sealing body and the assembly part 324, and further improving the stability of the connection between the sealing assembly 4 and the support shaft 32. In addition, with the help of multiple connecting parts 6, the distance between the sealing body and the assembly part 324 in the axial direction of the support shaft 32 can be adjusted from multiple positions on the circumference of the sealing body, thereby adjusting the sealing body to be parallel to the assembly part 324, and then adjusting the sealing body to be parallel to the bearing part 31, thereby improving the sealing effect of the sealing assembly 4 in sealing the reaction chamber 2.

[0126] In some embodiments, an exhaust component may be provided in the reaction chamber 2 , and the exhaust component is used to exhaust the gas in the reaction chamber 2 .

[0127] That is, the reaction gas entering the reaction chamber 2 and the gas entering the preset gap can both be discharged from the reaction chamber 2 to the outside of the reaction chamber 2 through the exhaust component.

[0128] As shown in Figures 1, 2, 4, 14 and 15, in some embodiments, the exhaust assembly may include a flow equalizer ring 51, an upper exhaust ring 52 and a lower exhaust ring 53. The lower exhaust ring 53 is annular and arranged along the inner circumference of the reaction chamber 2. The upper exhaust ring 52 is arranged on the lower exhaust ring 53 and is annularly arranged along the inner circumference of the reaction chamber 2. The flow equalizer ring 51 is arranged on the lower exhaust ring 53 and is annularly arranged inside the upper exhaust ring 52. An exhaust space 54 is formed between the flow equalizer ring 51, the upper exhaust ring 52 and the lower exhaust ring 53. A plurality of flow equalizer ports 511 are arranged at intervals in the circumferential direction of the flow equalizer ring 51. The flow equalizer ports 511 are connected to the exhaust space 54 for discharging the reaction gas in the reaction chamber 2 to the exhaust space 54. The exhaust space 54 is connected to the outside of the reaction chamber 2 for discharging the reaction gas outside the reaction chamber 2.

[0129] In actual applications, the exhaust space 54 can be connected to an exhaust device outside the process chamber. Under the exhaust action of the exhaust device, the reaction gas located above the carrier 31 in the reaction chamber 2 can be discharged into the exhaust space 54 through the multiple uniform flow ports 511, and then be pumped out of the process chamber through the exhaust space 54, so that the reaction gas in the reaction chamber 2 can be discharged outside the reaction chamber 2. In addition, by arranging multiple uniform flow ports 511 at intervals in the circumferential direction of the uniform flow ring 51, the reaction gas can be discharged into the exhaust space 54 from multiple locations in the circumferential direction of the uniform flow ring 51 through the uniform flow ports 511, thereby increasing the speed at which the reaction gas is discharged into the exhaust space 54, increasing the speed at which the reaction gas is discharged out of the process chamber, reducing the possibility of the reaction gas gathering and depositing at the edge of the reaction chamber 2, and then reducing the particles generated in the reaction chamber 2 due to the gathering and deposition of the reaction gas, thereby improving the semiconductor process.

[0130] In some embodiments, a plurality of flow equalizer ports 511 may be evenly spaced and arranged in the circumferential direction of the flow equalizer ring 51 .

[0131] In some embodiments, the flow uniformity port 511 may be U-shaped.

[0132] As shown in Figure 15, in some embodiments, the lower exhaust ring 53 may include an outer ring body 531, an inner ring body 532 and a connecting ring body 533. The outer ring body 531 is annular and is arranged around the annular inner ring body 532. The outer ring body 531 and the inner ring body 532 are connected by an annular connecting ring body 533. The inner diameter of the inner ring body 532 is larger than the outer diameter of the supporting part 31, and a plurality of exhaust ports 534 are arranged at intervals in the circumferential direction of the inner ring body 532. The exhaust ports 534 are connected to the exhaust space 54 for discharging gas into the exhaust space 54. The outer ring body 531 is provided with an exhaust port 535 for communicating with an exhaust device outside the reaction chamber 2 for discharging gas outside the reaction chamber 2.

[0133] By making the inner diameter of the inner ring body 532 larger than the outer diameter of the carrier portion 31, a gap can be created between the inner ring body 532 and the carrier portion 31 when the carrier portion 31 is in the process position, thereby allowing the gas in the preset gap below the carrier portion 31 to flow into the gap between the inner ring body 532 and the carrier portion 31. Subsequently, under the pumping action of the pumping device, the gas can be discharged into the exhaust space 54 through the multiple exhaust ports 534 of the inner ring body 532, and then be pumped out of the process chamber through the exhaust space 54 through the exhaust port 535, thereby allowing the gas in the reaction chamber 2 to be discharged out of the reaction chamber 2. In addition, by providing multiple exhaust ports 534 at intervals along the circumference of the inner ring body 532, the gas can be discharged into the exhaust space 54 through the exhaust ports 534 at multiple locations along the circumference of the inner ring body 532, thereby increasing the speed at which the gas is discharged into the exhaust space 54, increasing the speed at which the gas is discharged out of the process chamber, reducing the possibility of the gas escaping above the carrier portion 31, and thus reducing the possibility of the gas interfering with the semiconductor process, thereby improving the semiconductor process.

[0134] In some embodiments, the plurality of exhaust ports 534 may be evenly spaced around the circumference of the inner ring body 532 .

[0135] As shown in FIG. 15 , in some embodiments, the radial size of the exhaust port 534 may gradually increase from close to the exhaust port 535 to far away from the exhaust port 535 in the circumferential direction of the inner ring body 532 .

[0136] This design is due to the fact that the suction force of the exhaust device gradually decreases from close to the exhaust port 535 to far away from the exhaust port 535 on the circumference of the inner ring body 532. By gradually increasing the radial size of the exhaust port 534 from close to the exhaust port 535 to far away from the exhaust port 535 on the circumference of the inner ring body 532, the gas can be quickly extracted from multiple locations on the circumference of the inner ring body 532 to the exhaust space 54.

[0137] As shown in FIG. 4 , in some embodiments, the sealing assembly 4 may further include a second sealing member 44 , which is telescopically disposed in the assembly space 436 for sealing between the support shaft 32 and the sealing body.

[0138] This design is because the sealing body is disposed on the support shaft 32 so as to be movable along the axial direction of the support shaft 32. Consequently, a gap may exist between the support shaft 32 and the sealing body, potentially allowing communication between the reaction chamber 2 and the outer chamber 1 through this gap. By disposing a second sealing member 44 within the assembly space 436, the second sealing member 44 can be used to seal the support shaft 32 and the sealing body, isolating the reaction chamber 2 from the outer chamber 1. Furthermore, by making the second sealing member 44 retractable, the second sealing member 44 can be retracted and expanded as the sealing body moves along the axial direction of the support shaft 32 to maintain a seal between the support shaft 32 and the sealing body.

[0139] As shown in FIG4 , in some embodiments, the second seal 44 can be annular and disposed around the support shaft 32 , with one end of the second seal 44 sealingly connected to the assembly portion 324 and the other end sealingly connected to the sealing body. This design allows the second seal 44 to seal between the support shaft 32 and the sealing body.

[0140] In some embodiments, the second sealing member 44 may include a bellows, one end of which may be welded to the assembly portion 324 for sealing, and the other end of which may be welded to the sealing body for sealing, thereby sealing between the support shaft 32 and the sealing body.

[0141] As shown in FIG1 and FIG2 , in some embodiments, the semiconductor process chamber may further include an upper electrode structure 9 , which is disposed on top of the plurality of reaction chambers 2 and is used to provide radio frequency energy for the semiconductor process and excite the reaction gas to form plasma.

[0142] In some embodiments, the semiconductor process chamber provided by the embodiments of the present application may be suitable for a plasma enhanced atomic layer deposition process.

[0143] As shown in Figures 1-3, an embodiment of the present application also provides a semiconductor process equipment, including a wafer transfer device 11 and a semiconductor process chamber as provided in an embodiment of the present application. The wafer transfer device 11 is located in the outer cavity 1 and is used to take and place wafers to and from the carrying parts 31 when each carrying part 31 is in the transfer position.

[0144] The semiconductor process equipment provided by the embodiment of the present application, with the help of the semiconductor process chamber provided by the embodiment of the present application, can avoid interference between the mutual communication of multiple reaction chambers 2 when performing semiconductor processes, so that the multiple reaction chambers 2 can be independent of each other, thereby improving the consistency and stability of the semiconductor processes performed on wafers in the multiple reaction chambers 2, and can avoid problems caused by the reduction of elastic force, irregular jumping and inability to apply high-temperature processes (for example, 550°C and above) of the elastic bellows, thereby improving the sealing stability of the sealing component 4, and can improve the use stability of the semiconductor process chamber and the semiconductor process equipment.

[0145] In summary, the semiconductor process chamber and semiconductor process equipment provided by the embodiments of the present application can improve the sealing stability of the sealing assembly 4 and can improve the operating stability of the semiconductor process chamber and the semiconductor process equipment.

[0146] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A semiconductor process chamber, characterized in that: It comprises an outer cavity, wherein the outer cavity has a plurality of reaction areas, and each of the reaction areas is provided with a reaction cavity, a carrying device and a sealing assembly; wherein: The bottom end of the reaction chamber has an opening; The carrying device comprises a carrying part and a lifting support shaft, wherein the carrying part is used to carry the wafer, and the support shaft is arranged at the bottom of the carrying part, and is used to support the carrying part and lift and lower between the process position in the reaction chamber and the transmission position below the reaction chamber through the opening; The sealing assembly is arranged below the bearing portion and connected to the bearing device, and the support shaft passes through the sealing assembly. The sealing assembly is used to rise and fall with the support shaft, and when the support shaft supports the bearing portion to rise to the process position, the sealing assembly contacts the bottom end of the reaction chamber to seal the opening.

2. The semiconductor process chamber according to claim 1, characterized in that: The sealing assembly is connected to the support shaft.

3. The semiconductor process chamber according to claim 2, characterized in that: The support shaft is provided with an assembly portion, and the assembly portion surrounds the support shaft; The sealing assembly comprises a connecting component and an annular sealing body; The sealing body surrounds the supporting shaft, the sealing body is used to seal the opening, and the sealing body has an annular assembly space surrounding the supporting shaft and used to accommodate the assembly portion; The connecting member is used to connect the sealing assembly and the support shaft by connecting the sealing body and the fitting portion.

4. The semiconductor process chamber according to claim 3, characterized in that: When the sealing body seals the opening, a preset gap is provided between the sealing body and the bearing portion.

5. The semiconductor process chamber according to claim 4, characterized in that: The sealing body comprises: an annular first sealing plate, an annular second sealing plate located at a side of the first sealing plate away from the bearing portion and isolated from the first sealing plate, and a side wall located between the first sealing plate and the second sealing plate; The first sealing plate is used to seal the opening; The side wall connects the first sealing plate and the second sealing plate to form the assembly space between the first sealing plate, the second sealing plate and the side wall, and an assembly opening of the assembly space faces the outer peripheral surface of the support shaft.

6. The semiconductor process chamber according to claim 5, characterized in that: The first sealing plate has a gas passage inside, the first sealing plate has a plurality of first gas outlet holes penetrating into the gas passage on a side facing the bearing portion, and the inner annular surface of the first sealing plate has a first gas inlet hole communicating with the gas passage; An air inlet channel is provided in the support shaft, and the support shaft has a second air outlet at a position opposite to the inner annular surface of the first sealing plate, so that the gas in the air inlet channel is transported to the preset gap through the second air outlet, the first air inlet, the gas channel and the first air outlet in sequence.

7. The semiconductor process chamber according to claim 6, characterized in that: The gas channel includes a plurality of tributaries distributed along the circumferential direction of the first sealing plate and a main airway connected to the plurality of tributaries; The main airway is annular, the plurality of tributaries are arranged around the main airway, and each tributary extends radially along the first sealing plate; The first air inlet is in communication with the main air passage.

8. The semiconductor process chamber according to claim 6, characterized in that: The carrying device further comprises a plurality of support columns penetrating the carrying portion and being liftable; The first sealing plate further has a through hole for each of the supporting columns to pass through, and the orthographic projection of the through hole on the bearing portion coincides with the orthographic projection of the first air outlet on the bearing portion.

9. The semiconductor process chamber according to claim 6, characterized in that: The radial dimension of the first air inlet hole gradually decreases from an end of the first air inlet hole close to the support shaft to an end of the first air inlet hole far from the support shaft.

10. The semiconductor process chamber according to claim 3, characterized in that: The sealing assembly also includes a first sealing member, the sealing body is provided with an assembly groove, the assembly groove is arranged on a side of the sealing body facing the bottom end of the reaction chamber and is arranged along the circumference of the sealing body, the first sealing member is annular and is assembled in the assembly groove, and the first sealing member is used to contact with the bottom end of the reaction chamber when the support shaft supports the bearing part to rise to the process position, and the opening is sealed by sealing between the sealing body and the bottom end of the reaction chamber.

11. The semiconductor process chamber according to claim 10, characterized in that: The radial dimension of the groove opening of the assembly groove is smaller than the radial dimension of the groove bottom of the assembly groove.

12. The semiconductor process chamber according to claim 4, characterized in that: A surface of the sealing body facing the bearing portion is arc-shaped, and a distance between the surface of the sealing body facing the bearing portion and the bearing portion gradually increases from a center to an edge of the surface of the sealing body facing the bearing portion.

13. The semiconductor process chamber according to claim 3, characterized in that: The connection member is also used to adjust the distance between the sealing body and the fitting portion in the axial direction of the support shaft.

14. The semiconductor process chamber according to claim 13, wherein: The connecting component includes an external threaded component, a middle threaded component and an internal threaded component, the external threaded component has a first external thread and a first internal thread, and the thread direction of the first external thread is opposite to the thread direction of the first internal thread, the external threaded component passes through the sealing body to the assembly space, and is threadedly matched with the sealing body through the first external thread, the middle threaded component has a second external thread, the middle threaded component passes through the interior of the external threaded component, and is threadedly matched with the first internal thread through the second external thread, the internal threaded component has a third external thread, the internal threaded component passes through the interior of the middle threaded component, and is threadedly matched with the assembly portion through the third external thread.

15. The semiconductor process chamber according to claim 14, wherein: The pitch of the first external thread is greater than the pitch of the first internal thread.

16. The semiconductor process chamber according to claim 14, wherein: The connecting component also includes a support reinforcement member, which is annular and arranged along the inner circumference of the middle threaded member and fixedly connected to the middle threaded member. One end of the support reinforcement member abuts against the assembly portion, and the other end abuts against the head of the internal threaded member.

17. The semiconductor process chamber according to claim 3, characterized in that: The number of the connecting components is plural, and the connecting components are arranged at intervals in the circumferential direction of the sealing body.

18. A semiconductor process equipment, characterized in that: It comprises a wafer transfer device and a semiconductor process chamber as described in any one of claims 1 to 17, wherein the wafer transfer device is located in the external cavity and is used for taking and placing wafers into and out of the carrying parts when each of the carrying parts is located in the transfer position.

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