Mounting table, semiconductor manufacturing device, and electrostatic chuck

Abstract

A mounting table (1) is provided with a mounting body (2), a bonding material (4), and a base (3). The bonding material (4) has a prescribed melting temperature, and the mounting body (2) and the base (3) are bonded via the bonding material (4).

Description

Mounting table, semiconductor manufacturing apparatus and electrostatic chuck

[0001] The present disclosure relates to a mounting table, a semiconductor manufacturing apparatus, and an electrostatic chuck.

[0002] Electrostatic chucks have been known as wafer holding devices in semiconductor manufacturing equipment. The electrostatic chuck includes a base member and a ceramic member bonded to the base member. The electrostatic chuck attracts and holds a wafer on the surface of the ceramic member (hereinafter referred to as the "attraction surface") by utilizing electrostatic attraction generated by applying a voltage to a chuck electrode disposed inside the ceramic member. For example, Japanese Patent Laid-Open Publication No. 2019-62072 (JP2019-62072A) discloses an electrostatic chuck that includes a step of using a jig having a protrusion and holding a connection terminal, and joining the connection terminal held by the jig to the terminal pad while fitting the protrusion into the recess of the ceramic sintered body. In addition, Japanese Patent Publication No. 2020-47746 (JP2020-47746A) discloses a holding device that contains a hard magnetic material in the form of fibers at least in part of the joint, thereby maintaining flexibility.

[0003] The electrostatic chuck in Japanese Patent Publication No. 2019-62072 (JP2019-62072A) has a structure in which a protrusion and a recess fit together. However, the protrusion and recess are formed of metal and ceramic, respectively, making it difficult to relieve stress and leaving room for improvement. Furthermore, the holding device in Japanese Patent Publication No. 2020-47746 (JP2020-47746A) has a joint containing hard magnetic fibers and a resin material. However, this is insufficient to relieve excessive stress caused by thermal expansion at higher temperatures, and there is also room for improvement in terms of achieving joint strength at high temperatures.

[0004] The present disclosure has been made in consideration of these points, and aims to provide a new mounting table, semiconductor manufacturing apparatus, and electrostatic chuck that are capable of alleviating stress, maintaining or improving bonding strength, and achieving efficient heat conduction.

[0005] The mounting table of the present disclosure is a mounting table comprising a mounting body, a bonding material, and a base, wherein the bonding material has a predetermined melting temperature, and the mounting body and the base are bonded via the bonding material.

[0006] In the mounting table of the present disclosure, the bonding material may be in a liquid state under a condition of 400°C.

[0007] In the mounting table of the present disclosure, the bonding material may have an elastic modulus of 1.0 to 500.0 MPa at 150°C and a viscosity of 500 to 150,000 mPa·s at 300°C.

[0008] In the mounting table of the present disclosure, an inorganic porous body may be provided on the lower surface of the mounting body or on the upper surface of the base.

[0009] The mounting table of the present disclosure may include both a first inorganic porous body bonded to the lower surface of the mounting body and a second inorganic porous body bonded to the upper surface of the base.

[0010] In the mounting table of the present disclosure, a bonding material may be present in at least some of the pores formed in the inorganic porous body.

[0011] In the mounting table of the present disclosure, the first inorganic porous body and the second inorganic porous body may be spaced apart from each other under conditions of 25°C, and may be in at least partial contact with each other under conditions of 400°C.

[0012] In the mounting table of the present disclosure, the inorganic porous body may have a plurality of protrusions.

[0013] In the mounting table of the present disclosure, the convex portions of the first inorganic porous body may be disposed between the convex portions of the second inorganic porous body.

[0014] The semiconductor manufacturing apparatus of the present disclosure may include the above-described mounting table.

[0015] The electrostatic chuck of the present disclosure may include the mounting table described above.

[0016] In the mounting table of the present disclosure, the linear expansion coefficient of the mounting body at 300°C to 400°C may be 1 to 30 ppm / °C.

[0017] In the mounting table of the present disclosure, the base may have a linear expansion coefficient of 1 to 30 ppm / °C at 50 to 150°C.

[0018] In the mounting table of the present disclosure, the difference in linear expansion coefficient between the mounting body at 300°C to 400°C and the base at 50°C to 150°C may be 0.1 to 30 ppm / °C.

[0019] In the mounting table of the present disclosure, the inorganic porous body may have a space factor of 30 to 85%.

[0020] In the mounting table of the present disclosure, the inorganic porous material may be fibrous.

[0021] In the mounting table of the present disclosure, the fibrous inorganic porous body may contain at least one material selected from the group consisting of copper, stainless steel, nickel, and alumina.

[0022] FIG. 1 is a schematic cross-sectional view showing the configuration of a mounting table according to an embodiment of the present disclosure; FIG. 2 is a schematic view showing possible forms of a bonding material and an inorganic porous body in a low-temperature state in a mounting table according to an embodiment of the present disclosure; FIG. 3 is a schematic view showing possible forms of a bonding material and an inorganic porous body in a high-temperature state in a mounting table according to an embodiment of the present disclosure; FIG. 4 is a schematic view showing the arrangement of ring-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a mounting table according to an embodiment of the present disclosure; FIG. 5 is a schematic view showing the arrangement of lattice-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a modified mounting table according to an embodiment of the present disclosure; FIG. 6 is a schematic view showing the arrangement of disk-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a modified mounting table according to an embodiment of the present disclosure; FIG. 7 is a schematic view showing the arrangement of cylindrical inorganic porous bodies provided on the mounting body and the base, respectively, in a modified mounting table according to an embodiment of the present disclosure.

[0023] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. FIGS. 1 to 7 are diagrams illustrating portions of a mounting table according to an embodiment of the present disclosure. Of these, FIG. 1 is a schematic cross-sectional view illustrating the configuration of a mounting table according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram illustrating possible configurations of a bonding material and an inorganic porous body in a low-temperature state in the mounting table shown in FIG. 1. FIG. 3 is a schematic diagram illustrating possible configurations of a bonding material and an inorganic porous body in a high-temperature state in the mounting table according to an embodiment of the present disclosure. FIG. 4 is a schematic diagram illustrating the arrangement of ring-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a mounting table according to an embodiment of the present disclosure. FIG. 5 is a schematic diagram illustrating the arrangement of lattice-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a modified mounting table according to an embodiment of the present disclosure. FIG. 6 is a schematic diagram illustrating the arrangement of disk-shaped inorganic porous bodies provided on the mounting body and the base, respectively, in a modified mounting table according to an embodiment of the present disclosure. FIG. 7 is a schematic diagram showing a modified example of the mounting table according to the embodiment of the present disclosure, illustrating the arrangement of cylindrical inorganic porous bodies provided on the mounting body and the base, respectively.

[0024] 1, the mounting table 1 according to this embodiment is an electrostatic chuck (not shown) in a semiconductor manufacturing apparatus (not shown) that serves as a holding device for holding a wafer W. The mounting table 1 includes a mounting body 2, a bonding material 4, and a base 3.

[0025] The mounting body 2 is, for example, a cylindrical member made of ceramics (e.g., alumina, aluminum nitride, ceramic composite material, etc.) or heat-resistant polymer material (e.g., polyimide, polyamide, etc.). The mounting body 2 can withstand temperatures of several hundred degrees, which is sufficient for semiconductor manufacturing.

[0026] An edge portion 2a is formed on the periphery of one flat surface (first flat portion) of the mounting body 2, extending outward in the planar direction of the flat surface.

[0027] An electrode 7 made of a conductive material (e.g., copper, aluminum, tungsten, molybdenum, etc.) is provided inside the mounting body 2. The shape of the electrode 7 is not particularly limited, but may be, for example, a circle, an approximately circle, a ring, or a comb shape. When a voltage is applied to the electrode 7 from a power source, an electrostatic attraction force is generated, and the wafer W is attracted and fixed to a flat surface (second flat surface) of the mounting body 2 opposite to the first flat surface.

[0028] The coefficient of linear expansion of the mounting body 2 at temperatures between 300°C and 400°C is 1 to 30 ppm / °C.

[0029] The base 3 is, for example, a cylindrical member having a diameter equal to or larger than the diameter of the first flat surface side of the support body 2, and is made of metal (aluminum, aluminum alloy, etc.) or ceramic (alumina, silicon carbide, aluminum nitride, etc.).

[0030] An annular recess 3a is formed on one flat surface (third flat surface portion) of the base 3. This annular recess 3a defines a first protrusion 3b on the periphery of the third flat surface. The outer diameter of the annular recess 3a is the same as or larger than the diameter of the first flat surface side of the mounting body 2. The thickness (L1) of the edge 2a of the mounting body 2 is shorter than the depth (L2) of the recess 3a of the base 3 (L1<L2). Therefore, when the bonding material 4 is filled in the recess 3a and the mounting body 2 is placed on the bonding material 4, the first flat surface portion of the mounting body 2 and the bottom surface of the annular recess 3a of the base 3 do not come into contact.

[0031] A flow path 8 is formed inside the base 3. When a coolant (e.g., a fluorine-based inert liquid or water) flows through the flow path 8, the base 3 is cooled, and the mounting body 2 is cooled by heat transfer between the base 3 and the mounting body 2 via the bonding material 4 (described later), and the wafer W held on the second flat portion of the mounting body 2 is cooled. In this way, temperature control of the wafer W is achieved.

[0032] The linear expansion coefficient of the base 3 at temperatures between 50°C and 150°C is 1 to 30 ppm / °C.

[0033] Here, the difference in the linear expansion coefficient between the mounting body 2 at 300°C to 400°C and the base 3 at 50°C to 150°C is 0.1 to 30 ppm / °C.

[0034] The mounting body 2 and the base 3 are provided with a first inorganic porous body 5 and a second inorganic porous body 6, respectively.

[0035] 4 , the first inorganic porous body 5 is a porous body provided on the mounting body 2, and is provided on the first flat portion (lower surface) of the mounting body 2. The first inorganic porous body 5 is a fibrous structure, and from the viewpoints of heat resistance, strength, etc., it is preferable that the first inorganic porous body 5 is a fibrous structure containing a metal such as copper, stainless steel, nickel, alumina, or a ceramic. The first inorganic porous body 5 is a plurality of annular members having different diameters, and the plurality of first inorganic porous bodies 5 are concentrically arranged on the mounting body 2.

[0036] The second inorganic porous body 6 is a porous body provided on the base 3, and is provided on the bottom surface (upper surface) of the recess 3a of the base 3. The second inorganic porous body 6 is also a fibrous structure, but from the viewpoint of heat resistance and the like, it is preferably a fibrous structure containing a metal such as copper, stainless steel, nickel, alumina, or ceramics. The second inorganic porous body 6 is also a plurality of annular members having different diameters, and a plurality of the second inorganic porous bodies 6 are concentrically arranged on the base 3.

[0037] Here, the first inorganic porous bodies 5 and the second inorganic porous bodies 6 are both arranged concentrically, but when the first flat surface and the third flat surface are opposed to each other, the first inorganic porous bodies 5 and the second inorganic porous bodies 6 are fitted into a recessed portion defined by the plurality of first inorganic porous bodies 5 and one flat surface (first flat surface) of the mounting body 2, and the plurality of second inorganic porous bodies 6 and the bottom surface of the recess 3a of the base 3. In other words, the convex portions of the plurality of first inorganic porous bodies 5 are arranged between the convex portions of the plurality of second inorganic porous bodies 6.

[0038] 1, the height (L4) of the first inorganic porous body 5 and the height (L5) of the second inorganic porous body 6 are approximately the same as or shorter than the length (L3) obtained by subtracting the thickness (L1) of the edge portion 2a of the mounting body 2 from the depth (L2) of the recess 3a. Therefore, when the first inorganic porous body 5 and the second inorganic porous body 6 are fitted together, gaps are formed between the tip surface of the first inorganic porous body 5 and the bottom surface of the recess 3a of the base 3, and between the tip surface of the second inorganic porous body 6 and the first flat portion (lower surface) of the mounting body 2. The dimensions of the mounting base 1 are expressed as follows: L6: length between the fitted first inorganic porous body 5 and second inorganic porous body 6; L7: width of the second flat portion of the mounting body 2; L8: width of the recess 3a; L9: width of the first protrusion 3b; L10: width of the edge portion 2a of the mounting body 2.

[0039] Voids are also formed in locations adjacent to the plurality of first inorganic porous bodies 5 and the plurality of second inorganic porous bodies 6. In order to adjust the internal pressure, a void for adjusting the internal pressure or an opening to the outside may be provided between the first flat portion of the mounting body 2 and the recess 3a of the base 3. For example, a void is also formed between the first convex portion 3b and the edge portion 2a.

[0040] Furthermore, when the first flat portion of the mounting body 2 is placed on the third flat portion of the base 3, the space factor of the inorganic porous bodies in a cross section cut along the surface direction at any point passing through the first inorganic porous body 5 and the second inorganic porous body 6 is 30 to 85%. Here, the space factor is calculated by the following formula: area occupied by the first inorganic porous body 5 and the second inorganic porous body 6 cut along the surface direction at any point passing through the first inorganic porous body 5 and the second inorganic porous body 6 / (area occupied by the first inorganic porous body 5 and the second inorganic porous body 6+area of ​​the bonding material 4)×100(%).

[0041] The first inorganic porous body 5 and the second inorganic porous body 6 each contain at least one material selected from the group consisting of copper, stainless steel, nickel, and alumina.

[0042] The bonding material 4 is a material that has fluidity at high temperatures, such as a thermoplastic polymer such as polyamide, polyimide, polyamideimide, polyphenylene sulfide, liquid crystal polymer, polyether ether ketone, polyether sulfone, or polyester. The bonding material 4 bonds the mounting body 2 and the base 3 and has a melting temperature (melting point) of 200°C or higher. The bonding material 4 is liquid at 300°C. The bonding material 4 also has an elastic modulus of 1.0 to 500.0 MPa at 150°C and a viscosity of 500 to 150,000 mPa·s at 300°C. The bonding material 4 is solid at low temperatures (e.g., 25°C or lower) and liquid at high temperatures (e.g., 300°C or higher), and is capable of changing states.

[0043] The bonding material 4 is filled in the gap formed between the tip surface of the first inorganic porous body 5 and the bottom surface of the recess 3 a of the base 3, the gap formed between the tip surface of the second inorganic porous body 6 and the first flat portion (lower surface) of the mounting body 2, the gap formed in the portion adjacent to the plurality of first inorganic porous bodies 5 and the plurality of second inorganic porous bodies 6, and the gap formed between the first protrusion 3 b and the edge portion 2 a. As a result, the mounting body 2 and the base 3 are bonded by the bonding material 4 filled between the lower surface of the mounting body 2 and the upper surface of the base 3.

[0044] Furthermore, as described above, since the plurality of first inorganic porous bodies 5 and the plurality of second inorganic porous bodies 6 are porous bodies, the bonding material 4 is present in at least some of the pores formed in the plurality of first inorganic porous bodies 5 and the plurality of second inorganic porous bodies 6.

[0045] In a configuration in which the mounting body 2 and the base 3 are bonded together by a bonding material 4 filled between the lower surface of the mounting body 2 and the upper surface of the base 3, the bonding material 4 remains solid at low temperatures (e.g., 25°C or lower) as shown in Fig. 2. On the other hand, at high temperatures (e.g., 300°C or higher), the bonding material 4 becomes liquid. In this case, at low temperatures, the first inorganic porous body 5 and the second inorganic porous body 6 do not thermally expand and remain separated from each other. On the other hand, at high temperatures, the first inorganic porous body 5 and the second inorganic porous body 6 thermally expand, and at least portions of the first inorganic porous body 5 and the second inorganic porous body 6 come into contact with each other.

[0046] The mounting table 1 of this embodiment, configured as described above, includes a mounting body 2, a bonding material 4, and a base 3. The bonding material 4 has a predetermined melting temperature (melting point), and the mounting body 2 and the base 3 are bonded together via the bonding material 4. More specifically, in conventional electrostatic chucks, protrusions and recesses are fitted together. However, the protrusions and recesses are formed of metal and ceramic, respectively, making stress relief difficult and leaving room for improvement. Furthermore, in the holding device, the bonding portion contains hard magnetic fibers and a resin material. However, this is insufficient to relieve excessive stress caused by thermal expansion at higher temperatures, and there is also room for improvement in terms of achieving bonding strength at high temperatures. In contrast, the mounting table 1 of this embodiment does not limit the materials used for the mounting body 2 and the base 3, making it easier to relieve stress. Furthermore, because the bonding portion is not simply made of a resin material, excessive stress caused by thermal expansion can be efficiently relieved.

[0047] Furthermore, in the mounting table 1 of this embodiment, as described above, the bonding material 4 may be in a liquid state under a condition of 400° C. In this case, the bonding material 4 changes from a solid to a liquid state at high temperatures, and the first inorganic porous body 5 and the second inorganic porous body 6 are not in contact with each other in the solid state, but when the first inorganic porous body 5 and the second inorganic porous body 6 thermally expand, they can be brought into contact with each other nondestructively.

[0048] Furthermore, in the mounting table 1 of this embodiment, as described above, the elastic modulus of the bonding material 4 at 150°C may be 1.0 to 500.0 MPa, and the viscosity at 300°C may be 500 to 150,000 mPa·s, 3,000 to 150,000 mPa·s, or 3,000 to 100,000 mPa·s. In this case, since the bonding material 4 is flexible under specific conditions, even if the mounting table 1 expands or contracts due to temperature changes in the surrounding environment, the bonding material 4 can absorb the stress caused by the expansion and contraction, thereby preventing damage to the mounting table 1.

[0049] Furthermore, as described above, the mounting table 1 of this embodiment may include both the first inorganic porous body 5 bonded to the lower surface of the mounting body 2 and the second inorganic porous body 6 bonded to the upper surface of the base 3. In this case, the first inorganic porous body 5 and the second inorganic porous body 6 can be engaged with each other without colliding with each other, thereby achieving a good balance between stress relaxation at high temperatures, maintenance or improvement of bonding strength, and efficient heat conduction.

[0050] Furthermore, in the mounting table 1 of the present embodiment, as described above, the bonding material 4 may be present in at least some of the pores formed in the inorganic porous body. In this case, the bonding material 4 enters the pores of the inorganic porous body, and stress relaxation at high temperatures, maintenance or improvement of bonding strength, and efficient heat conduction can be achieved in a balanced manner.

[0051] Furthermore, in the mounting table 1 of this embodiment, as described above, the first inorganic porous body 5 and the second inorganic porous body 6 may be spaced apart from each other at 25° C., and may be in at least partial contact with each other at 400° C. In this case, the first inorganic porous body 5 and the second inorganic porous body 6 may interlock with each other due to thermal expansion accompanying a temperature change, thereby realizing stress relief, maintenance or improvement of bonding strength, and efficient heat conduction.

[0052] Furthermore, in the mounting table 1 of this embodiment, the inorganic porous body may have a plurality of protrusions as described above. In this case, the inorganic porous bodies can be more firmly fixed to each other at high temperatures.

[0053] Furthermore, in the mounting table 1 of this embodiment, as described above, the convex portions of the first inorganic porous body 5 may be disposed between the convex portions of the second inorganic porous body 6. In this case, the first inorganic porous body 5 and the second inorganic porous body 6 can be interlocked, which makes it possible to achieve a good balance between stress relaxation at high temperatures, maintenance or improvement of bonding strength, and efficient heat conduction.

[0054] The semiconductor manufacturing apparatus of this embodiment may also include the above-described mounting table 1. In this case, it is possible to realize a semiconductor manufacturing apparatus that relieves stress at high temperatures, maintains or improves bonding strength, and exhibits efficient heat conduction.

[0055] The electrostatic chuck of the present embodiment may also include the above-described mounting table 1. In this case, an electrostatic chuck that relieves stress at high temperatures, maintains or improves bonding strength, and exhibits efficient heat conduction can be realized.

[0056] Furthermore, in the mounting table 1 of this embodiment, as described above, the linear expansion coefficient of the mounting body 2 at 300° C. to 400° C. may be 1 to 30 ppm / ° C. In this case, since the linear expansion coefficient of the mounting body 2 is small, deformation of the mounting body 2 is unlikely to occur even when the temperature of the surrounding environment changes.

[0057] Furthermore, in the mounting table 1 of this embodiment, as described above, the linear expansion coefficient of the base 3 at temperatures between 50°C and 150°C may be 1 to 30 ppm / °C. When a refrigerant such as water flows through the flow path 8, the temperature of the base 3 becomes lower than the temperature of the mounting body 2. At this time, within the above range of the linear expansion coefficient, the difference in expansion between the base 3 and the mounting table 2 becomes small, and deformation of the base 3 and the mounting body 2 becomes less likely to occur.

[0058] Furthermore, in the mounting table 1 of this embodiment, as described above, the difference in the linear expansion coefficient between the mounting body 2 at 300° C. to 400° C. and the base 3 at 50° C. to 150° C. may be 0.1 to 30 ppm / ° C., or 0.1 to 15 ppm / ° C. In this case, since the linear expansion coefficients of the mounting body 2 and the base 3 are both small, deformation of the mounting body 2 and the base 3 is unlikely to occur even when the temperature of the surrounding environment changes.

[0059] Furthermore, in the mounting table 1 of this embodiment, as described above, the space factor of the inorganic porous bodies may be 30 to 85%, or may be 50 to 85%. In this case, even when the inorganic porous bodies are thermally expanded, excessive contact between the inorganic porous bodies can be avoided.

[0060] Furthermore, in the mounting table 1 of this embodiment, the inorganic porous material may be fibrous, as described above. In this case, the bonding material 4 can easily enter the gaps in the inorganic porous material.

[0061] In addition, in the mounting table 1 of the present embodiment, as described above, the fibrous inorganic porous body may contain at least one material selected from the group consisting of copper, stainless steel, nickel, and alumina, which can achieve efficient heat conduction.

[0062] The mounting table 1, the semiconductor manufacturing apparatus, and the electrostatic chuck according to this embodiment are not limited to the above-described embodiments.

[0063] In the present embodiment, the base 3 is described as being made of a metal (aluminum, aluminum alloy, etc.), but is not limited thereto. For example, the base 3 may be made of ceramics (alumina, silicon carbide, aluminum nitride, etc.).

[0064] Furthermore, in the present embodiment, an example has been described in which the first inorganic porous body 5 is bonded to the lower surface of the mounting body 2 and the second inorganic porous body 6 is bonded to the upper surface of the base 3, but the present invention is not limited to this. For example, the first inorganic porous body 5 or the second inorganic porous body 6 may be bonded to the lower surface of the mounting body 2 or the upper surface of the base 3. In this case, stress relaxation at high temperatures, maintenance or improvement of bonding strength, and efficient heat conduction can be achieved in a balanced manner.

[0065] Furthermore, a semiconductor manufacturing apparatus may include the mounting table 1 according to this embodiment. In this case, by using the above-described mounting table 1, it is possible to form a semiconductor manufacturing apparatus that can relieve stress during high-temperature processing, maintain or improve bonding strength, and achieve efficient heat conduction.

[0066] The electrostatic chuck may include the mounting table 1 according to the present embodiment. In this case, by using the above-described mounting table 1, it is possible to form an electrostatic chuck that can relieve stress during high-temperature processing, maintain or improve bonding strength, and achieve efficient heat conduction.

[0067] In the present embodiment, the convex portions of the plurality of first inorganic porous bodies 5 are disposed between the convex portions of the plurality of second inorganic porous bodies 6, and both the first inorganic porous body 5 and the second inorganic porous body 6 are annular. However, this is not limiting. For example, as shown in Fig. 5 , the first inorganic porous body 5 provided on the first flat surface (lower surface) of the support body 2 may be a lattice-shaped convex portion, and the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3a of the base 3 may be a quadrangular prism-shaped convex portion having the same size as or smaller than the recess defined by the periphery of the lattice-shaped convex portion of the first inorganic porous body 5. In addition, the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3a of the base 3 may be a lattice-shaped convex portion, and the first inorganic porous body 5 provided on the first flat surface (lower surface) of the support body 2 may be a quadrangular prism-shaped convex portion having the same size as or smaller than the recess defined by the periphery of the lattice-shaped convex portion of the first inorganic porous body 5.

[0068] The first inorganic porous body 5 provided on the first flat surface (lower surface) of the support body 2 may have a disk-shaped protrusion having a diameter smaller than the diameter of the support body 2 including the edge portion 2 a, and the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3 a of the base 3 may have the same or substantially the same diameter as the base 3 and may have a recess that fits into the disk-shaped protrusion of the first inorganic porous body 5. As shown in Figure 6, the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3 a of the base 3 may have a disk-shaped protrusion having a diameter smaller than the diameter of the support body 2 including the edge portion 2 a, and the first inorganic porous body 5 provided on the first flat surface (lower surface) of the support body 2 may have a recess that fits into the disk-shaped protrusion of the second inorganic porous body 6.

[0069] The first inorganic porous body 5 provided on the first flat surface (lower surface) of the support 2 may be one or more cylindrical protrusions, and the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3 a of the base 3 may have the same or substantially the same diameter as the base 3 and may have a recess capable of accommodating one or more cylindrical protrusions of the first inorganic porous body 5. As shown in Fig. 7, the second inorganic porous body 6 provided on the bottom surface (upper surface) of the recess 3 a of the base 3 may be one or more cylindrical protrusions, and the first inorganic porous body 5 provided on the first flat surface (lower surface) of the support 2 may be a disk-shaped member having the same diameter as or a smaller diameter than the diameter of the support 2 including the edge portion 2 a and having a recess capable of accommodating one or more cylindrical protrusions of the second inorganic porous body 6.

[0070] The present disclosure will be described in more detail below using examples and comparative examples as shown in Table 1.

[0071]

[0072] (Bonding Material 4) For Examples 1 to 10 and Comparative Example 1, each bonding material was prepared as follows. Polyamide 1: Leona CR301, manufactured by Asahi Kasei Corporation, storage modulus at deflection temperatures under load of 250°C and 150°C of 17.2 MPa. Polyamide 2: Leona 1502, manufactured by Asahi Kasei Corporation, storage modulus at deflection temperatures under load of 230°C and 150°C of 13.6 MPa. Polyamide 3: Leona TR161, manufactured by Asahi Kasei Corporation, storage modulus at deflection temperatures under load of 210°C and 150°C of 0.8 MPa. Polyimide 1: Aurum PL450C, manufactured by Mitsui Chemicals, Inc., storage modulus at deflection temperatures under load of 230°C and 150°C of 63.2 MPa. Polyimide 2: Aurum JCN3030, manufactured by Mitsui Chemicals, Inc., storage modulus at deflection temperatures under load of 247°C and 150°C of 125.6 MPa. Thermosetting adhesive: ELASTOSIL R 1.7 parts by mass of curing agent DS-3 (manufactured by Wacker Asahi Kasei Co., Ltd.) was added to 100 parts by mass of 756 / 40 (manufactured by Wacker Asahi Kasei Co., Ltd., elastic modulus at 150°C: 36.5 MPa) and kneaded to obtain a thermosetting adhesive.

[0073] (Inorganic porous body) Using the configurations shown in Table 1, inorganic porous bodies of Examples 1 to 10 and Comparative Example 1 were prepared. That is, copper fibers having a diameter of 12.5 μm, a fiber length of 2.0 mm, and a substantially circular cross-sectional shape were compressed and formed to a width of 300 mm, a length of 300 mm, and a thickness of 10 mm, and then a sintering process was carried out to bond the metal fibers together, thereby obtaining each test piece. The obtained test pieces were cut to the following sizes to prepare each inorganic porous body. First inorganic porous body 5: Ring 1, outer diameter 280 mm, inner diameter 250 mm, height 6 mm Ring 2, outer diameter 215 mm, inner diameter 185 mm, height 6 mm Ring 3, outer diameter 150 mm, inner diameter 120 mm, height 6 mm Ring 4, outer diameter 85 mm, inner diameter 55 mm, height 6 mm Second inorganic porous body 6: Ring 5, outer diameter 247.5 mm, inner diameter 217.5 mm, height 6 mm Ring 6, outer diameter 182.5 mm, inner diameter 152.5 mm, height 6 mm Ring 7, outer diameter 117.5 mm, inner diameter 87.5 mm, height 6 mm Ring 8, outer diameter 52.5 mm, inner diameter 22.5 mm, height 6 mm

[0074] (Mounting body 2) For Examples 1 to 10 and Comparative Example 1, mounting bodies 2 having the following dimensions were prepared using the configuration shown in Table 1. Thickness (L1) of edge portion 2a of mounting body 2: 7.0 mm Height (L4) of first inorganic porous body 5: 6.0 mm Width (L7) of second flat portion of mounting body 2: 300.0 mm Width (L10) of edge portion 2a of mounting body 2: 15.0 mm

[0075] (Base 3) For Examples 1 to 10 and Comparative Example 1, a base 3 having the following dimensions was prepared using the configuration shown in Table 1. Depth of recess 3a (L2): 14.0 mm Height of second inorganic porous body 6 (L5): 6.0 mm Width of recess 3a of base (L8): 350.0 mm Width of first protrusion 3b (L9): 6.0 mm

[0076] (Evaluation Samples) For Examples 1 to 10 and Comparative Example 1, evaluation samples with the following dimensions were produced based on the above and Table 1. Length (L6) between the fitted first inorganic porous body 5 and second inorganic porous body 6: 2.5 mm Length (L3) obtained by subtracting the thickness (L1) of the edge portion 2a of the mounting body 2 from the depth (L2) of the recess 3a: 7.0 mm Furthermore, for Comparative Example 1, following the above procedure, the product was left to stand in a thermostatic chamber set at 165°C for 30 minutes, and then left to stand in a thermostatic chamber set at 200°C for 4 hours to produce an evaluation sample.

[0077] <Evaluation>

[0078] (Viscosity Measurement) The melt viscosity of Polyamides 1 to 3 and Polyimides 1 to 2 was measured at 300°C using a capillary rheometer (Capillograph 1DPMD-C, manufactured by Toyo Seiki Seisakusho, Ltd.). That is, a capillary with a diameter of 1 mm and a length of 10 mm was used, and the melt viscosity was measured at a shear rate of 103 s -1 The viscosity was measured under the above conditions, and the obtained value was taken as the melt viscosity.

[0079] (Evaluation of Thermal Cycle Test) For Examples 1 to 10 and Comparative Example 1, each mounting table was placed in a thermostatic chamber set at 25°C and left to stand for 30 minutes, then heated to 300°C at a heating rate of 50°C / min and left to stand for 30 minutes. The temperature was then lowered to 25°C at a cooling rate of 50°C / min and left to stand for 30 minutes, after which a thermal cycle test was performed by repeatedly heating and lowering the temperature under the same conditions as above. Evaluation was performed according to the following criteria: ⊚: No warping occurred after 100 thermal cycles. ◯: Warping occurred after 50 to less than 100 thermal cycles. Δ: Warping occurred after 20 to less than 50 thermal cycles. ×: Warping occurred after less than 20 thermal cycles.

[0080] (Evaluation of Bonding Strength at 25°C) For Examples 1 to 10 and Comparative Example 1, the underside of the base 3 was firmly fixed to a tabletop and left to stand in an environment of 25°C for 30 minutes. Thereafter, using a universal tensile tester (manufactured by INSTRON, 600XWHVL-G2A), the mounting body 2 was lifted in the direction perpendicular to the second plane at a tensile speed of 10 mm / min, and the bonding strength between the mounting body 2 and the base 3 was evaluated. The evaluation was performed according to the following criteria. ⊚: 3 kgf / cm 2 〇:2kgf / cm2 Above, 3kgf / cm 2 Less than △: 1 kgf / cm 2 Above, 2kgf / cm 2 Less than 1 kgf / cm 2 less than

[0081] (Evaluation of Bonding Strength at 300°C) For Examples 1 to 10 and Comparative Example 1, the lower surface of the base 3 was firmly fixed on a hot plate set at 300°C and left to stand for 30 minutes. Thereafter, using a universal tensile tester (manufactured by INSTRON, 600XWHVL-G2A), the mounting body 2 was lifted in the direction perpendicular to the second plane at a tensile speed of 10 mm / min, and the bonding strength between the mounting body 2 and the base 3 was evaluated. The evaluation was performed according to the following criteria. ⊚: 2 kgf / cm 2 〇:1kgf / cm 2 Above, 2kgf / cm 2 Less than △: 0.5 kgf / cm 2 Above, 1kgf / cm 2 Less than 0.5 kgf / cm 2 less than

[0082] (Overall evaluation) For each evaluation, the evaluation result was converted into "5" for ⊚, "3" for 〇, "1" for △, and "-1" for ×, and the total value of each evaluation was used as the overall evaluation value. The larger the overall evaluation value, the higher the evaluation.

[0083] REFERENCE SIGNS LIST 1 Mounting table 2 Mounting body 2a Edge portion 3 Base 3a Recessed portion 3b First protrusion 4 Bonding material 5 First inorganic porous body 6 Second inorganic porous body 7 Electrode 8 Flow path W Wafer

Claims

1. A mounting table comprising a mounting body, a bonding material, and a base, wherein the bonding material has a predetermined melting temperature, and the mounting body and the base are bonded together via the bonding material.

2. The mounting table according to claim 1, wherein the bonding material is in a liquid state under a temperature condition of 400°C.

3. The mounting table according to claim 1 or 2, wherein the elastic modulus of the bonding material at 150°C is 1.0 to 500.0 MPa and the viscosity at 300°C is 500 to 150,000 mPa·s.

4. A mounting table according to any one of claims 1 to 3, comprising an inorganic porous body on the lower surface of the mounting body or on the upper surface of the base.

5. A mounting table according to any one of claims 1 to 4, comprising both a first inorganic porous body bonded to the lower surface of the mounting body and a second inorganic porous body bonded to the upper surface of the base.

6. The mounting table according to claim 4, wherein a bonding material is present in at least some of the pores formed in the inorganic porous body.

7. The mounting table according to claim 5, wherein the first inorganic porous body and the second inorganic porous body are spaced apart from each other under a temperature of 25°C, and are in at least partial contact with each other under a temperature of 400°C.

8. The mounting table according to claim 4, wherein the inorganic porous body is a plurality of protrusions.

9. The mounting table according to claim 7, wherein the convex portions of the first inorganic porous body are disposed between the convex portions of the second inorganic porous body.

10. A semiconductor manufacturing device comprising the mounting table according to any one of claims 1 to 9.

11. An electrostatic chuck comprising the mounting table according to any one of claims 1 to 9.

12. The mounting table according to any one of claims 1 to 9, wherein the linear expansion coefficient of the mounting body at 300°C to 400°C is 1 to 30 ppm / °C.

13. The mounting table according to any one of claims 1 to 9, wherein the linear expansion coefficient of the base at 50°C to 150°C is 1 to 30 ppm / °C.

14. The mounting table according to any one of claims 1 to 9, wherein the difference in linear expansion coefficient between the mounting body at 300°C to 400°C and the base at 50°C to 150°C is 0.1 to 30 ppm / °C.

15. The mounting table according to claim 4, wherein the inorganic porous body has a volume fraction of 30 to 85%.

16. The mounting table according to claim 4, wherein the inorganic porous material is fibrous.

17. The mounting table according to claim 16, wherein the fibrous inorganic porous body contains at least one material selected from the group consisting of copper, stainless steel, nickel, and alumina.

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