Semiconductor process apparatus and exhaust system thereof

Abstract

The present application relates to the technical field of semiconductors, and discloses a semiconductor process apparatus and an exhaust system thereof. The exhaust system of the semiconductor process apparatus comprises a first vacuum pipe, a second vacuum pipe, a vacuum proportional valve and a first pressure measurement device; an inlet end of the first vacuum pipe is configured to be communicated with a reaction chamber; the first pressure measurement device is arranged in the first vacuum pipe to measure the pressure value of the first vacuum pipe; the vacuum proportional valve is arranged between an outlet end of the first vacuum pipe and an inlet end of the second vacuum pipe; an outlet end of the second vacuum pipe is connected to a vacuum pump; and the opening degree of the vacuum proportional valve can be adjusted on the basis of the pressure value measured by the first pressure measurement device. Thus, under the suction action of the vacuum pump, the air pressure in the reaction chamber can be stably maintained in a high vacuum state by means of the vacuum proportional valve, so that high-activity free radicals are generated by means of hydrogen and oxygen, and an oxide film with high density and process uniformity can be rapidly generated; and the process effect is improved.

Description

Semiconductor process equipment and its exhaust system Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process equipment and its exhaust system. Background Technology

[0002] In the field of integrated circuit manufacturing, there are currently two commonly used oxidation techniques under normal or low-pressure environments. The first is wet oxidation, which uses water vapor as the oxidant. This technique has a fast film formation rate but the film is not dense, has slightly poor insulation performance, and the wafer surface uniformity is also poor. The second is dry oxidation, which uses oxygen as the oxidant. This technique forms a dense film but has a slow film formation rate and poor uniformity. As process technology advances, the linewidth requirements become narrower, requiring the oxide film to be more uniform, denser, and have a higher film formation rate.

[0003] Existing semiconductor process equipment includes a reaction chamber and an exhaust system, with the exhaust system connected to the reaction chamber to remove gases. However, existing exhaust systems can only maintain the reaction chamber at atmospheric pressure or slightly low pressure, and the oxidation technology used in such environments results in poor process performance.

[0004] Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor process equipment and its exhaust system, which can solve the problem of poor process performance in related technologies.

[0006] In a first aspect, embodiments of this application provide an exhaust system for a semiconductor process apparatus, including a first vacuum line, a second vacuum line, a vacuum pump, a vacuum proportional valve, and a first pressure detection device. The inlet end of the first vacuum line is used to connect to a reaction chamber. The first pressure detection device is disposed in the first vacuum line to detect the pressure value of the first vacuum line. The vacuum proportional valve is disposed between the outlet end of the first vacuum line and the inlet end of the second vacuum line. The outlet end of the second vacuum line is connected to the vacuum pump. The opening degree of the vacuum proportional valve can be adjusted according to the pressure value detected by the first pressure detection device.

[0007] Secondly, embodiments of this application also provide a semiconductor process apparatus, including a reaction chamber and the aforementioned exhaust system, wherein the inlet end of the first vacuum pipeline is connected to the reaction chamber.

[0008] In this embodiment, a vacuum pump is used to evacuate the reaction chamber through a first vacuum line and a second vacuum line to reduce the gas pressure in the reaction chamber. Furthermore, a vacuum proportional valve is well-suited for high-vacuum environments. The opening of the vacuum proportional valve is adjusted based on the pressure value detected by a first pressure detection device. This valve ensures that the vacuum pump applies a stable suction force to the reaction chamber while maintaining the pressure value detected by the first pressure detection device at a stable high-vacuum state. Since the first vacuum line is connected to the reaction chamber and its pressure value is equal to that of the reaction chamber, it also helps to maintain a stable high-vacuum state in the reaction chamber. Thus, under high-vacuum conditions, the reaction chamber can generate highly reactive free radicals through hydrogen and oxygen, rapidly forming a dense oxide film with strong process uniformity. Compared to oxidation technologies used in atmospheric or low-pressure environments, oxidation technologies employed under high-vacuum conditions better meet process requirements and improve process efficiency. Attached Figure Description

[0009] Figure 1 is a schematic diagram of the structure of semiconductor process equipment in related technologies;

[0010] Figure 2 is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application.

[0011] Explanation of reference numerals in the attached figures:

[0012] 100'-Reaction Chamber

[0013] 200'-Three-way directional valve

[0014] 300' - Atmospheric pressure exhaust pipe, 310' - Atmospheric pressure control valve,

[0015] 400' - Low-pressure exhaust pipe, 410' - Low-pressure control valve, 420' - Differential pressure gauge, 430' - Large-range vacuum gauge, 440' - Small-range vacuum gauge

[0016] 500'-vacuum pump

[0017] 100-Reaction Chamber

[0018] 210 - First vacuum line, 220 - Second vacuum line, 221 - Second pressure detection device, 222 - Vacuum branch, 223 - Tenth switching valve, 230 - Vacuum proportional valve

[0019] 300-vacuum pump,

[0020] 400 - First pressure detection device, 410 - First vacuum gauge, 420 - Second vacuum gauge, 430 - Differential pressure gauge

[0021] 500 - Slow withdrawal pipeline, 510 - First switching valve, 520 - First flow restrictor, 530 - Throttling valve.

[0022] 610 - First pressure relief pipe, 611 - Second switching valve, 612 - First check valve, 620 - Second pressure relief pipe, 630 - Third pressure relief pipe, 631 - Third switching valve

[0023] 710 - First air supply line, 711 - Fourth switching valve, 712 - Pressure regulating valve, 713 - Flow regulating element, 714 - Second check valve, 715 - Pressure detection element.

[0024] 720 - Second air supply line, 721 - Fifth switch valve, 722 - Second flow restrictor, 723 - Third check valve

[0025] 810 - Sixth switch valve, 820 - Seventh switch valve, 830 - Eighth switch valve, 840 - Ninth switch valve

[0026] 910 - First Branch Road, 920 - Second Branch Road, 930 - Third Branch Road. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0028] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0029] In related technologies, referring to Figure 1, semiconductor process equipment relies on an exhaust system to discharge gas from the reaction chamber 100'. The exhaust system is connected to the reaction chamber 100'. The exhaust system includes a three-way reversing valve 200', an atmospheric pressure exhaust pipe 300', and a low-pressure exhaust pipe 400'. The inlet end of the three-way reversing valve 200' is connected to the reaction chamber 100', and the three-way reversing valve 200' has an atmospheric pressure outlet and a low-pressure outlet. The atmospheric pressure exhaust pipe 300' is connected to the atmospheric pressure outlet, and the atmospheric pressure exhaust pipe 300' is equipped with an atmospheric pressure control valve 310'. The atmospheric pressure control valve 310' allows the reaction chamber 100' to be controlled. 0' maintains an atmospheric pressure environment of 760 Torr; the inlet end of the low-pressure exhaust pipe 400' is connected to the low-pressure outlet, and the outlet end of the low-pressure exhaust pipe 400' is connected to the vacuum pump 500'. The low-pressure exhaust pipe 400' is equipped with a low-pressure control valve 410'. Under the suction action of the vacuum pump 500', the low-pressure control valve 410' can make the reaction chamber 100' reach a minimum low-pressure environment of 50 Torr, and the low-pressure environment is unstable.

[0030] In some embodiments, the low-pressure control valve 410' may include a first pneumatic valve, a second pneumatic valve, and a third pneumatic valve. The inlet ends of the first, second, and third pneumatic valves are all connected to the low-pressure exhaust pipe 400'. The outlet end of the first pneumatic valve is connected to a differential pressure gauge 420', the outlet end of the second pneumatic valve is connected to a large-range vacuum gauge 430', and the outlet end of the third pneumatic valve is connected to a small-range vacuum gauge 440'. The large-range vacuum gauge 430' has a range of 1000 Torr, and the small-range vacuum gauge 440' has a range of 100 Torr. The pressure of the low-pressure exhaust pipe 400' is detected using the differential pressure gauge 420', the large-range vacuum gauge 430', and the small-range vacuum gauge 440'.

[0031] However, the exhaust system can only maintain the reaction chamber at atmospheric or slightly low pressure, thus limiting wafer processing to either wet or dry oxidation techniques. Wet oxidation uses water vapor as the oxidant, resulting in fast film formation but poor film density and wafer uniformity. Dry oxidation uses oxygen as the oxidant, producing a denser film but with slower film formation and also poorer process uniformity. In short, oxidation techniques used in atmospheric or slightly low pressure environments result in poor process performance.

[0032] Based on this, this application discloses a semiconductor process equipment and its exhaust system, which can maintain a high vacuum state in the reaction chamber, and the oxidation technology used in the high vacuum environment can effectively improve the process effect.

[0033] The semiconductor process equipment and its exhaust system provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0034] Please refer to Figure 2. The exhaust system of the semiconductor process equipment disclosed in this application embodiment is used to exhaust the reaction chamber 100 so as to maintain the reaction chamber 100 in a high vacuum state.

[0035] The exhaust system includes a first vacuum line 210, a second vacuum line 220, a vacuum pump 300, a vacuum proportional valve 230, and a first pressure detection device 400. The inlet end of the first vacuum line 210 is used to connect to the reaction chamber 100. The vacuum proportional valve 230 is located between the outlet end of the first vacuum line 210 and the inlet end of the second vacuum line 220. That is, the inlet of the vacuum proportional valve 230 is connected to the first vacuum line 210, and the outlet of the vacuum proportional valve 230 is connected to the second vacuum line 220. Moreover, the outlet end of the second vacuum line 220 is connected to the vacuum pump 300. Thus, when the vacuum pump 300 operates, it applies a suction effect to the reaction chamber 100 through the second vacuum line 220 and the first vacuum line 210, causing the gas inside the reaction chamber 100 to be discharged and reducing the gas pressure inside the reaction chamber 100. Simultaneously, the vacuum proportional valve 230, being well-suited for high vacuum environments, plays a stabilizing and regulating role. By relying on the vacuum proportional valve 230, the gas flow rate within the first vacuum line 210 and the second vacuum line 220 can be adjusted, allowing the gas pressure in the reaction chamber 100 to be stably maintained at a high vacuum state. In some embodiments, the gas pressure in the reaction chamber 100 can be stably maintained at 1 mTorr.

[0036] A first pressure detection device 400 is disposed in the first vacuum line 210. The first pressure detection device 400 is used to detect the pressure value of the first vacuum line 210. The first pressure detection device 400 can be a pressure gauge or other pressure-detecting component. The opening degree of the vacuum proportional valve 230 can be adjusted according to the pressure value detected by the first pressure detection device 400. In some embodiments, the exhaust system can adjust the opening degree of the vacuum proportional valve 230 according to the pressure value detected by the first pressure detection device 400. Further, in some embodiments, the exhaust system may include a control device, which is communicatively connected to both the first pressure detection device 400 and the vacuum proportional valve 230. The control device automatically adjusts the opening degree of the vacuum proportional valve 230 according to the pressure value detected by the first pressure detection device 400; alternatively, the opening degree of the vacuum proportional valve 230 can be manually adjusted according to the pressure value detected by the first pressure detection device 400.

[0037] In this embodiment, the vacuum pump 300 applies a suction force to the reaction chamber 100, reducing the gas pressure in the reaction chamber 100. Furthermore, the vacuum proportional valve 230 is well-suited for high-vacuum environments, enabling stable and accurate adjustment within such environments. Therefore, the vacuum proportional valve 230 ensures that the vacuum pump 300 applies a stable suction force to the reaction chamber 100, while also maintaining the pressure detected by the first pressure detection device 400 stably at a high-vacuum level, meaning the gas pressure in the reaction chamber 100 is stably maintained at a high-vacuum state. Thus, under high-vacuum conditions, the reaction chamber 100 can generate highly reactive free radicals through hydrogen and oxygen, rapidly producing a dense oxide film with strong process uniformity. Compared to oxidation technologies used in atmospheric or low-pressure environments, oxidation technologies employed under high-vacuum conditions better meet process requirements and improve process performance.

[0038] In the initial stage of vacuum pump 300 evacuating gas from reaction chamber 100, vacuum proportional valve 230 is opened, and the evacuated gas passes through first vacuum line 210, vacuum proportional valve 230 and second vacuum line 220 in sequence. The gas pressure in reaction chamber 100 drops rapidly and is accompanied by violent pressure oscillation. This phenomenon will cause the wafer in reaction chamber 100 to vibrate, which will then cause the wafer to break.

[0039] To address the aforementioned issues, the exhaust system further includes a slow-extraction pipeline 500, a first switching valve 510, and a flow-limiting device. The first end of the slow-extraction pipeline 500 is connected to the first vacuum pipeline 210, and the second end is connected to the second vacuum pipeline 220. Both the flow-limiting device and the first switching valve 510 are located within the slow-extraction pipeline 500. The first switching valve 510 controls the on / off state of the slow-extraction pipeline 500, and the flow-limiting device controls the gas flow rate through the slow-extraction pipeline 500. The flow-limiting device is connected in series with the first switching valve 510 and in parallel with the vacuum proportional valve 230. Specifically, the slow-extraction pipeline 500 includes a first slow-extraction section and a second slow-extraction section. The first switching valve 510 is located between the first and second slow-extraction sections. The first slow-extraction section is connected to the first vacuum pipeline 210, and the second slow-extraction section is connected to the second vacuum pipeline 220. The flow-limiting device is located in the second slow-extraction section. In some embodiments, the first switching valve 510 may be a pneumatic valve or other switching valve that performs an opening and closing function.

[0040] In this embodiment, during the initial stage of vacuum pump 300 drawing gas from reaction chamber 100, vacuum proportional valve 230 is closed and first switch valve 510 is opened, allowing the drawn gas to pass sequentially through first vacuum line 210, slow pump line 500, and second vacuum line 220. The pumping speed is controlled at a low level by a flow limiting device, so that the gas pressure in reaction chamber 100 can transition relatively smoothly from atmospheric pressure to low pressure. This avoids violent pressure fluctuations caused by high pumping speed, which could lead to wafer vibration or even damage, thus ensuring the process effect.

[0041] In some embodiments, the flow limiting device may consist only of a throttle valve 530, which controls the range of gas flow through the slow-pull line 500 by adjusting the throttle valve 530. Further, in some embodiments, the throttle valve 530 may be a needle valve. In other embodiments, the flow limiting device may further include a first flow limiter 520, which is connected in series with the throttle valve 530 and is used to limit the maximum gas flow through the slow-pull line 500. It should be noted that the maximum gas flow limited by the first flow limiter 520 is less than the maximum value of the gas flow range that the throttle valve 530 can control. In this embodiment, the throttle valve 530 is combined with the first flow limiter 520, which can limit the range of gas flow through the slow extraction line 500 and limit the maximum gas flow. This avoids the situation where the gas flow through the slow extraction line 500 is too large if the throttle valve 530 is used alone. It effectively reduces the gas flow in the slow extraction line 500, reduces the gas extraction speed, and helps the gas pressure in the reaction chamber 100 to transition more smoothly from atmospheric pressure to low pressure.

[0042] When the reaction chamber 100 is under vacuum and the process is completed, the gas pressure inside the reaction chamber 100 needs to be restored to atmospheric pressure. At this time, the vacuum proportional valve 230 is closed, and a gas such as nitrogen is introduced into the reaction chamber 100 to increase the gas pressure inside the reaction chamber 100. However, there is a possibility that abnormal gas intake may cause the gas pressure inside the reaction chamber 100 to be greater than atmospheric pressure.

[0043] To solve the above problems, the exhaust system also includes a first pressure relief pipe 610, a second pressure relief pipe 620, and a second switching valve 611. The inlet end of the first pressure relief pipe 610 is connected to the first vacuum line 210, and the outlet end of the first pressure relief pipe 610 is connected to the second pressure relief pipe 620. The second switching valve 611 is located between the first pressure relief pipe 610 and the second pressure relief pipe 620, that is, the outlet end of the first pressure relief pipe 610 is connected to the inlet end of the second switching valve 611, and the inlet end of the second pressure relief pipe 620 is connected to the outlet end of the second switching valve 611. The second pressure relief pipe 620 can be connected to the plant exhaust system, and the connection between the first pressure relief pipe 610 and the second pressure relief pipe 620 can be controlled by the second switching valve 611. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value, it indicates that the gas pressure inside the reaction chamber 100 is too high. The second switch valve 611 is in the open state, allowing the gas inside the reaction chamber 100 to be discharged sequentially through the first vacuum line 210, the first pressure relief pipe 610, and the second pressure relief pipe 620, thereby quickly reducing the gas pressure in the reaction chamber 100. The first pressure value is greater than atmospheric pressure. Similarly, when the pressure value detected by the first pressure detection device 400 reaches atmospheric pressure, it indicates that the gas pressure inside the reaction chamber 100 has returned to atmospheric pressure, and further venting is unnecessary. The second switch valve 611 is in the closed state. Using this embodiment, rapid pressure relief can be achieved when the reaction chamber 100 is overpressured, ensuring the safety of the semiconductor process equipment.

[0044] In some embodiments, the second switching valve 611 can be a pneumatic valve or other switching valve that performs opening and closing functions; the second switching valve 611 can be communicatively connected to the first pressure detection device 400. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value, the second switching valve 611 will automatically open. Of course, the second switching valve 611 can also be manually controlled according to the pressure value detected by the first pressure detection device 400.

[0045] Of course, in other embodiments, the exhaust system may not be equipped with the first pressure relief pipe 610, the second pressure relief pipe 620 and the second switching valve 611. Exhaust can be carried out in other ways when there is overpressure, such as the reaction chamber 100 being directly equipped with a pressure relief device.

[0046] When the reaction chamber 100 is overpressurized, the second switch valve 611 is in the open state. If the first pressure relief pipe 610 is blocked or the second switch valve 611 malfunctions, the gas in the reaction chamber 100 cannot be discharged through the first pressure relief pipe 610 and the second pressure relief pipe 620, and cannot be depressurized in time. The reaction chamber 100 will then have problems due to prolonged overpressure.

[0047] To solve the above problems, the exhaust system also includes a third pressure relief pipe 630 and a third switching valve 631. The inlet end of the third pressure relief pipe 630 is connected to the first vacuum line 210, and the outlet end of the third pressure relief pipe 630 is connected to the second pressure relief pipe 620. The third switching valve 631 is installed in the third pressure relief pipe 630, that is, the third pressure relief pipe 630 is connected in parallel with the first pressure relief pipe 610. When the first pressure relief pipe 610 cannot exhaust gas, it can exhaust gas and relieve pressure through the third pressure relief pipe 630. At this time, the gas flows through the first vacuum line 210, the third pressure relief pipe 630 and the second pressure relief pipe 620 in sequence before being discharged. In some embodiments, when the pressure value detected by the first pressure detection device 400 reaches the first pressure value mentioned above, and the second switching valve 611 is in the closed state, it indicates that the reaction chamber 100 is overpressured and the second switching valve 611 is faulty. At this time, the third switching valve 631 is in the open state, and the pressure is released through the third pressure relief pipe 630. Of course, when the first pressure relief pipe 610 cannot release air, the flow rate of the first pressure relief pipe 610 is small. Therefore, the flow rate of the first pressure relief pipe 610 can be detected by the flow detection element. When the pressure value detected by the first pressure detection device 400 reaches the first pressure value, and the flow rate of the first pressure relief pipe 610 is small, the third switching valve 631 is in the open state.

[0048] In this embodiment, when the first pressure relief pipe 610 fails to release gas and pressure, the third switch valve 631 opens to make the third pressure relief pipe 630 conduct, and the third pressure relief pipe 630 is used to release gas and pressure. In this way, the dual-stage pressure relief pipeline is more secure, ensuring that the reaction chamber 100 can release gas and pressure in a timely manner, and ensuring that the semiconductor process equipment is in a safe state.

[0049] In some embodiments, the third switching valve 631 can be a pneumatic valve or other switching valve that performs opening and closing functions. The third switching valve 631 is communicatively connected to the second switching valve 611 and the first pressure detection device 400 (or flow detection element). When the pressure value detected by the first pressure detection device 400 reaches the first pressure value and the second switching valve 611 is in the closed state (or the flow rate of the first pressure relief pipe 610 is small), the third switching valve 631 automatically opens. Of course, the third switching valve 631 can also be manually controlled based on the pressure value detected by the first pressure detection device 400 and the opening and closing state of the second switching valve 611 (or the flow rate value of the first pressure relief pipe 610 detected by the flow detection element).

[0050] In some embodiments, the exhaust system further includes a first one-way valve 612, which is disposed in the second pressure relief pipe 620. The first one-way valve 612 conducts airflow through the second pressure relief pipe 620 from its inlet end to its outlet end. Further, in some embodiments, the first one-way valve 612 is disposed between the second pressure relief pipe 620 and the second switching valve 611. Using this embodiment, the first one-way valve 612 restricts the airflow direction within the second pressure relief pipe 620, preventing external gas from flowing back into the second pressure relief pipe 620 from its outlet end, thereby avoiding affecting the exhaust effect. Of course, in other embodiments, the second pressure relief pipe 620 may not be equipped with the first one-way valve 612.

[0051] The outlet end of the second pressure relief pipe 620 is connected to the plant exhaust system. The plant exhaust system contains a lot of pollutants. When the first pressure relief pipe 610 and the second pressure relief pipe 620 are not venting, the pollutants in the plant exhaust system will diffuse to the second pressure relief pipe 620, causing long-term pipe blockage and affecting the pressure relief and venting function.

[0052] To address the aforementioned issues, the exhaust system further includes a first make-up air line 710 and a fourth switching valve 711. The inlet end of the first make-up air line 710 is used to introduce purge gas, which can be nitrogen or other gases capable of purging. The outlet end of the first make-up air line 710 is connected to a second pressure relief pipe 620, allowing the purge gas to purge the second pressure relief pipe 620. The fourth switching valve 711 is located in the first make-up air line 710 and controls the opening or closing of the first make-up air line 710. Further, in some embodiments, the fourth switching valve 711 can be a manual valve, allowing manual opening or closing. The fourth switching valve 711 can also be any other switching valve that performs an opening and closing function. In this embodiment, when pollutants diffuse into the second pressure relief pipe 620, the fourth switch valve 711 can be opened, and the purging gas can purge the second pressure relief pipe 620 through the first air supply pipe 710, gradually purging the pollutants in the second pressure relief pipe 620 to the outside of the second pressure relief pipe 620, avoiding the pollutants from clogging the second pressure relief pipe 620, ensuring that the second pressure relief pipe 620 is unobstructed, and ensuring that the exhaust system can perform normal pressure relief and exhaust.

[0053] In some embodiments, the exhaust system further includes at least one of a pressure regulating valve 712 and a flow regulating element 713, wherein at least one of the pressure regulating valve 712 and the flow regulating element 713 is disposed in the first air supply line 710. Further, in some embodiments, only the pressure regulating valve 712 may be disposed in the first air supply line 710, only the flow regulating element 713 may be disposed in the first air supply line 710, or both the pressure regulating valve 712 and the flow regulating element 713 may be disposed in the first air supply line 710, i.e., the pressure regulating valve 712 and the flow regulating element 713 are connected in series. The pressure regulating valve 712 can adjust the pressure value of the first air supply line 710 to a first pressure range, and the flow regulating element 713 can adjust the flow rate of the first air supply line 710 to a first flow range. In addition, in some embodiments, the exhaust system further includes a pressure detection element 715, which is disposed in the first air supply line 710 to detect the pressure value of the first air supply line 710. The opening of the pressure regulating valve 712 can be adjusted according to the pressure value detected by the pressure detection element 715, for example, to maintain the pressure of the first air supply line 710 at 0.4MPa-0.6MPa. The flow regulating element 713 may include a flow meter, which is adjusted according to the flow value displayed by the flow meter to make the flow rate of the first air supply line 710 reach about 0.51L.

[0054] In this embodiment, the pressure of the first air supply line 710 can be maintained within a small range by relying on the pressure regulating valve 712, and the flow rate of the first air supply line 710 can be maintained within a small flow rate range by relying on the flow regulating element 713, so that the purging gas can stably purge the second pressure relief pipe 620, avoiding excessive flow rate and / or pressure of the purging gas, and also considering the pressure relief of the purging gas.

[0055] Of course, in other embodiments, the first air supply line 710 may not be equipped with a pressure regulating valve 712 and / or a flow regulating element 713.

[0056] In some embodiments, the exhaust system further includes a second one-way valve 714, which is disposed in the first air supply line 710. The second one-way valve 714 guides the first air supply line 710 from its inlet end to its outlet end. In this embodiment, the second one-way valve 714 restricts the airflow direction within the first air supply line 710, preventing gas in the second pressure relief pipe 620 from flowing back into the first air supply line 710 from its outlet end, thus avoiding affecting the purging effect. Of course, in other embodiments, the first air supply line 710 may not be equipped with the second one-way valve 714.

[0057] If the vacuum proportional valve 230 fails or malfunctions during the process of the vacuum pump 300 applying suction to the reaction chamber 100, it needs to be disassembled for maintenance. At this time, the second vacuum line 220 is in a vacuum state. In order to ensure the safety of the equipment, the air pressure of the second vacuum line 220 needs to be restored to atmospheric pressure before the vacuum proportional valve 230 is disassembled. To restore the gas pressure in the second vacuum line 220 to atmospheric pressure, in some embodiments, the exhaust system further includes a second gas supply line 720, a fifth switching valve 721, and a second pressure detection device 221. The inlet end of the second gas supply line 720 is used to introduce gas, and the outlet end of the second gas supply line 720 is connected to the second vacuum line 220. The fifth switching valve 721 is disposed in the second gas supply line 720, and the second pressure detection device 221 is disposed in the second vacuum line 220 to detect the pressure value of the second vacuum line 220. The fifth switching valve 721 replenishes gas to the second vacuum line 220 using the second gas supply line 720 according to the pressure value change detected by the second pressure detection device 221, so that the gas pressure in the second vacuum line 220 is restored to atmospheric pressure. In this embodiment, the fifth switching valve 721 can be a pneumatic valve or other switching valve that performs opening and closing functions. The second pressure detection device 221 can be a pressure gauge, vacuum gauge, or other pressure-detecting component. Furthermore, in some embodiments, the second pressure detection device 221 can be a vacuum gauge with a range of 0-1000 Torr. In this embodiment, the second gas supply line 720 is used to replenish gas to the second vacuum line 220, restoring the gas pressure in the second vacuum line 220 to atmospheric pressure, thereby facilitating the disassembly of the vacuum proportional valve 230 and ensuring equipment safety.

[0058] In addition, in some embodiments, the second pressure detection device 221 can be communicatively connected to the fifth switching valve 721. When the pressure detected by the second pressure detection device 221 reaches the atmospheric pressure value, the fifth switching valve 721 automatically closes, and the second gas supply line 720 stops supplying gas to the second vacuum line 220. Of course, the fifth switching valve 721 can also be manually controlled according to the pressure value detected by the second pressure detection device 221.

[0059] In some embodiments, the exhaust system further includes a second flow restrictor 722, which is disposed in the second air supply line 720. Thus, the second flow restrictor 722 controls the maximum airflow through the second air supply line 720, preventing excessive air intake velocity in the second air supply line 720 from causing overpressure in the second vacuum line 220. Of course, in other embodiments, the second air supply line 720 may not have a second flow restrictor 722; instead, the airflow in the second air supply line 720 can be controlled by controlling the air intake flow at its inlet end.

[0060] In some embodiments, the exhaust system further includes a third one-way valve 723, which is disposed in the second air supply line 720. The third one-way valve 723 opens the second air supply line 720 from its inlet to its outlet. Thus, the third one-way valve 723 restricts the airflow direction within the second air supply line 720, preventing gas from flowing back into the second air supply line 720 from its outlet, thereby avoiding affecting the inflation effect of the second vacuum line 220. Of course, in other embodiments, the second air supply line 720 may not have the third one-way valve 723.

[0061] In some embodiments, the exhaust system further includes a vacuum branch 222 and a tenth switching valve 223. The first end of the vacuum branch 222 is connected to the second vacuum line 220, and the second pressure detection device 221 is connected to the second end of the vacuum branch 222. The tenth switching valve 223 is located in the vacuum branch 222. Further, in some embodiments, the tenth switching valve 223 can be a pneumatic valve or other switching valve that performs an opening and closing function. When the vacuum proportional valve 230 malfunctions, the tenth switching valve 223 is opened, the second pressure detection device 221 detects the pressure of the second vacuum line 220, and then the fifth switching valve 721 is opened. The second gas supply line 720 begins to supply gas to the second vacuum line 220, and the pressure of the second vacuum line 220 gradually increases. When the pressure value detected by the second pressure detection device 221 is within the range of 758 Torr-762 Torr, it indicates that the second vacuum line 220 has returned to atmospheric pressure. The fifth switching valve 721 is then closed, gas supply stops, and the vacuum proportional valve 230 can be safely disassembled at this time.

[0062] In some embodiments, as shown in FIG2, the inlet end of the second gas supply line 720 is connected to the first gas supply line 710, that is, the first gas supply line 710 and the second gas supply line 720 can share the same gas source (i.e., GN2). Thus, while nitrogen is introduced into the first gas supply line 710, nitrogen also flows through the second gas supply line 720. At this time, the nitrogen can be used both as a purging gas and to increase the gas pressure of the second vacuum line 220. Further, in some embodiments, the connection point between the second gas supply line 720 and the first gas supply line 710 is located between the pressure regulating valve 712 and the outlet end of the first gas supply line 710.

[0063] In some embodiments, the exhaust system further includes a sixth switching valve 810, the inlet of which is connected to a first sealing detection device, and the outlet of which is connected to a first vacuum line 210. Further, in some embodiments, the sixth switching valve 810 can be a manual valve or other switching valve that functions as an open / close valve; the first sealing detection device can be a helium mass spectrometer. In this embodiment, the inlet of the sixth switching valve 810 serves as a sealing detection port. After the equipment installation is completed, the inlet of the sixth switching valve 810 can be connected to the first sealing detection device to detect the sealing performance of the first vacuum line 210.

[0064] In some embodiments, the exhaust system further includes a seventh switching valve 820, the inlet of which is connected to a second sealing detection device, and the outlet of which is connected to a second vacuum line 220. Further, in some embodiments, the seventh switching valve 820 can be a manual valve or other switching valve that functions as an open / close valve; the second sealing detection device can be a helium mass spectrometer. In this embodiment, the inlet of the seventh switching valve 820 serves as a sealing detection port. After equipment installation, the inlet of the seventh switching valve 820 can be connected to the second sealing detection device to detect the sealing performance of the second vacuum line 220.

[0065] Of course, in other embodiments, the exhaust system may not be equipped with the sixth switching valve 810 and / or the seventh switching valve 820. Before the equipment is installed, the first vacuum line 210 and the second vacuum line 220 are tested for sealing, without the need to connect the first sealing test device and / or the second sealing test device for sealing testing.

[0066] In some embodiments, the first pressure detection device 400 includes a second vacuum gauge 420 with a range of 0-1000 Torr. The exhaust system also includes a second branch 920, with a first end connected to the first vacuum line 210 and a second end connected to the second vacuum gauge 420. Thus, the second vacuum gauge 420 detects the pressure value of the first vacuum line 210 by detecting the pressure in the second branch 920. Furthermore, the second vacuum gauge 420 has a large range, enabling it to effectively measure the pressure values ​​of the reaction chamber 100 under vacuum and atmospheric pressure conditions. However, the detection accuracy of the second vacuum gauge 420 is low.

[0067] In other embodiments, the first pressure detection device 400 further includes a first vacuum gauge 410, the range of which is smaller than that of the second vacuum gauge 420. The exhaust system also includes a first branch 910 and an eighth switching valve 830. The first end of the first branch 910 is connected to the first vacuum line 210, and the second end of the first branch 910 is connected to the first vacuum gauge 410. The eighth switching valve 830 is disposed in the first branch 910 and controls the first branch 910 to be open or closed. Further, in some embodiments, the eighth switching valve 830 can be a pneumatic valve or other switching valve that performs an opening and closing function. When the pressure value detected by the second vacuum gauge 420 is greater than the second pressure value, the eighth switch valve 830 is in the closed state. At this time, the second vacuum gauge 420 effectively measures the pressure value of the first vacuum line 210 under medium vacuum, low vacuum and atmospheric pressure conditions (10 Torr-760 Torr), which is also the pressure value of the reaction chamber 100. When the pressure value detected by the second vacuum gauge 420 is less than or equal to the second pressure value, the eighth switch valve 830 is in the open state. At this time, the first vacuum gauge 410 accurately measures and feeds back the pressure value of the first vacuum line 210 under high vacuum conditions (1 m Torr-10 Torr), which is also the pressure value of the reaction chamber 100. The second pressure value is the maximum pressure value under high vacuum conditions. In some embodiments, the second pressure value is 10 Torr. The range of the first vacuum gauge 410 can be 0-10 Torr. If the pressure value detected by the second vacuum gauge 420 is greater than 10 Torr, it indicates that the pressure of the second vacuum line 220 exceeds the maximum pressure value under high vacuum conditions. At this time, it is not necessary to accurately detect the gas pressure value of the reaction chamber 100. Meanwhile, in order to avoid damage to the first vacuum gauge 410, the eighth switch valve 830 is closed, the first vacuum gauge 410 does not perform pressure detection, and only the second vacuum gauge 420 performs pressure detection.

[0068] In this embodiment, when the reaction chamber 100 is in a high vacuum state, the gas pressure in the reaction chamber 100 is low. The first vacuum gauge 410 accurately detects the gas pressure value of the reaction chamber 100 under high vacuum conditions, resulting in high detection accuracy. When the reaction chamber 100 is in a medium vacuum, low vacuum, or atmospheric pressure state, the gas pressure in the reaction chamber 100 is high. The second vacuum gauge 420 effectively detects the gas pressure value of the reaction chamber 100. At the same time, by setting the eighth switching valve 830, the first vacuum gauge 410 can be prevented from being damaged due to over-range detection.

[0069] In some embodiments, the first pressure detection device 400 further includes a differential pressure gauge 430, and the exhaust system further includes a third branch 930 and a ninth switching valve 840. The first end of the third branch 930 is connected to the first vacuum line 210, and the second end of the third branch 930 is connected to the first end of the differential pressure gauge 430. The second end of the differential pressure gauge 430 is connected to the external atmosphere. The ninth switching valve 840 is located in the third branch 930 and controls the opening and closing of the third branch 930. When the difference between the pressure value detected by the second vacuum gauge 420 and the atmospheric pressure value is less than the first difference value, it indicates that the gas pressure in the reaction chamber 100 is close to the atmospheric pressure value. The ninth switching valve 840 is in the open state, the third branch 930 is connected, and the differential pressure gauge 430 starts to detect the difference between the second vacuum line 220 and the atmospheric pressure value. At this time, the opening of the vacuum proportional valve 230 is adjusted according to the differential pressure value of the differential pressure gauge 430 until the differential pressure value of the differential pressure gauge 430 is zero, indicating that the reaction chamber 100 has returned to the atmospheric pressure value. Due to varying environmental conditions, air pressure differs between regions, with some areas having lower pressure and others higher. This means the atmospheric pressure is not always 760 Torr. If the reaction chamber 100 is only restored to 760 Torr using the second vacuum gauge 420, it indicates that the reaction chamber 100 has not reached atmospheric pressure. Therefore, the opening of the vacuum proportional valve 230 is adjusted using the differential pressure gauge 430 based on the difference between the air pressure in the reaction chamber 100 and atmospheric pressure, ensuring that the reaction chamber 100 accurately returns to atmospheric pressure.

[0070] Of course, in other embodiments, the first pressure detection device 400 may not be equipped with a differential pressure gauge 430, and the opening of the vacuum proportional valve 230 may be adjusted according to the pressure value detected by the second vacuum gauge 420 until the pressure value detected by the second vacuum gauge 420 reaches 760 Torr.

[0071] In summary, the usage process of the exhaust system for the semiconductor process equipment disclosed in this application is as follows:

[0072] After the equipment is installed, the sealing performance of the first vacuum line 210 and the second vacuum line 220 is tested first. Specifically, when testing the sealing performance of the first vacuum line 210, the vacuum proportional valve 230 is closed, the first sealing detection device, such as a helium mass spectrometer, is connected to the inlet of the sixth switching valve 810, and the eighth switching valve 830, the ninth switching valve 840, the first switching valve 510, the second switching valve 611, and the third switching valve 631 are closed, so that the first vacuum line 210 is in a closed state. Then, the sixth switching valve 810 is opened, and the first sealing detection device is used to test the leakage rate of the first vacuum line 210. If the leakage rate meets the set standard, it indicates that the sealing performance of the first vacuum line 210 is qualified. The sixth switching valve 810 is then closed, and the first sealing detection device is removed. If the leakage rate does not meet the set standard, it needs to be reinstalled to ensure sealing performance.

[0073] When testing the sealing performance of the second vacuum line 220, close the vacuum proportional valve 230, connect the second sealing device (such as a helium mass spectrometer) to the inlet of the seventh switching valve 820, close the tenth switching valve 223, the first switching valve 510, and the fifth switching valve 721, and turn off the vacuum pump 300 to keep the second vacuum line 220 in a closed state. Then, open the seventh switching valve 820 and activate the second sealing detection device to test the leakage rate of the second vacuum line 220. If the leakage rate meets the set standard, the sealing performance of the second vacuum line 220 is qualified. Close the seventh switching valve 820 and remove the second sealing detection device. If the leakage rate does not meet the set standard, it needs to be reinstalled to ensure sealing performance.

[0074] After the sealing of the first vacuum line 210 and the second vacuum line 220 passes the test, the process can proceed. At this time, the sixth switch valve 810, the seventh switch valve 820, the eighth switch valve 830, the ninth switch valve 840, the second switch valve 611, the third switch valve 631, and the tenth switch valve 223 are closed. In the initial stage of the vacuum pump 300 evacuating the gas in the reaction chamber 100, the gas pressure in the reaction chamber 100 drops rapidly, which can easily cause vibration of the wafer in the reaction chamber 100. Therefore, the vacuum proportional valve 230 is closed first, the first switch valve 510 is opened, the throttle valve 530 is adjusted to a smaller opening, and the first flow limiter 520 is used to limit the maximum gas flow of the slow evacuation line 500. Then the vacuum pump 300 is turned on. At this time, the gas in the reaction chamber 100 passes through the first vacuum line 210, the slow evacuation line 500, the second vacuum line 220, and the vacuum pump 300 in sequence, and the gas pressure in the reaction chamber 100 gradually decreases. During this process, the second vacuum gauge 420 monitors the pressure in the reaction chamber 100 in real time. Once the pressure transitions smoothly, the gas pressure in the reaction chamber 100 no longer fluctuates violently, and the pressure begins to decrease uniformly. At this point, the first switch valve 510 is closed, and the vacuum proportional valve 230 is opened. The gas no longer passes through the slow-pumping pipeline 500, but instead passes through the first vacuum pipeline 210, the second vacuum pipeline 220, and the vacuum pump 300 in sequence. When the pressure in the reaction chamber 100 drops to less than 10 Torr, the eighth switch valve 830 is opened. At this time, the first vacuum gauge 410 accurately measures the pressure in the reaction chamber 100 and transmits the detected pressure value to the vacuum proportional valve 230. The opening of the vacuum proportional valve 230 is adjusted according to the pressure value to stabilize the pressure in the reaction chamber 100 at 1 mTorr, providing high vacuum conditions for the subsequent oxidation process in the reaction chamber 100.

[0075] After the oxidation process is completed, the gas pressure in the reaction chamber 100 needs to be restored to atmospheric pressure. At this time, the vacuum proportional valve 230 and the eighth switch valve 830 are closed to avoid damage to the first vacuum gauge 410 due to pressure exceeding the range. Nitrogen is continuously supplied to the reaction chamber 100. The second vacuum gauge 420 monitors the pressure in real time. When the pressure value is restored to 720 Torr, the ninth switch valve 840 is opened. At this time, the differential pressure gauge 430 compares the pressure difference between the reaction chamber 100 and atmospheric pressure in real time. When the difference of the differential pressure gauge 430 is zero, it means that the reaction chamber 100 has been restored to atmospheric pressure. At this time, the supply of nitrogen to the reaction chamber 100 is stopped.

[0076] If the differential pressure gauge 430 shows a persistently greater than zero due to an abnormal air intake in reaction chamber 100, it indicates that the pressure in reaction chamber 100 exceeds atmospheric pressure. When the differential pressure reaches a first set value, such as 20 Torr, the second switch valve 611 opens, and the first check valve 612 opens simultaneously. The nitrogen gas in reaction chamber 100 is then discharged into the plant exhaust system through the first pressure relief pipe 610 and the second pressure relief pipe 620 to promptly depressurize reaction chamber 100 and reduce its pressure to atmospheric pressure. If the first pressure relief pipe 610 fails to depressurize due to a malfunction, the differential pressure gauge 430 will continue to rise. When the differential pressure reaches a second set value, such as 25 Torr, the third switch valve 631 opens, and the nitrogen gas in reaction chamber 100 is discharged into the plant exhaust system through the third pressure relief pipe 630 and the second pressure relief pipe 620, ensuring that reaction chamber 100 can be smoothly depressurized and ensuring equipment safety.

[0077] In addition, when pollutants in the plant exhaust system diffuse into the second pressure relief pipe 620 and cause blockage, it will affect the pressure relief and exhaust function. At this time, the fourth switch valve 711 is opened, and the purging gas enters the second pressure relief pipe 620 through the first air supply line 710. The purging gas purifies the second pressure relief pipe 620, gradually purging the pollutants in the second pressure relief pipe 620 to the outside of the second pressure relief pipe 620, ensuring that the second pressure relief pipe 620 is unobstructed.

[0078] If the vacuum proportional valve 230 fails or malfunctions during the process of vacuum pump 300 evacuating reaction chamber 100, it needs to be disassembled for maintenance. At this time, the second vacuum line 220 is in a vacuum state and the vacuum proportional valve 230 cannot be directly disassembled. To ensure equipment safety, the fifth switch valve 721 and the tenth switch valve 223 are opened, and the second gas supply line 720 supplies nitrogen to the second vacuum line 220. At the same time, the second pressure detection device 221 detects the pressure value of the second vacuum line 220. When the pressure value of the second vacuum line 220 reaches the atmospheric pressure value, the fifth switch valve 721 is closed to stop the supply of nitrogen. At this time, the vacuum proportional valve 230 can be safely disassembled.

[0079] Based on the exhaust system disclosed in the embodiments of this application, this application also provides a semiconductor process apparatus, which includes a reaction chamber 100 and the semiconductor process apparatus described in the above embodiments, wherein the inlet end of the first vacuum pipeline 210 is connected to the reaction chamber 100. In some embodiments, the semiconductor process apparatus may be a vertical furnace apparatus, and the reaction chamber 100 of the vertical furnace apparatus is used to perform a high-vacuum oxidation process.

[0080] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An exhaust system for semiconductor process equipment, characterized in that, The device includes a first vacuum line, a second vacuum line, a vacuum pump, a vacuum proportional valve, and a first pressure detection device. The inlet end of the first vacuum line is used to connect to the reaction chamber. The first pressure detection device is installed in the first vacuum line to detect the pressure value of the first vacuum line. The vacuum proportional valve is installed between the outlet end of the first vacuum line and the inlet end of the second vacuum line. The outlet end of the second vacuum line is connected to the vacuum pump. The opening degree of the vacuum proportional valve can be adjusted according to the pressure value detected by the first pressure detection device.

2. The exhaust system according to claim 1, characterized in that, The exhaust system also includes a slow-extraction pipeline, a first switching valve, and a flow-limiting device. The first end of the slow-extraction pipeline is connected to the first vacuum pipeline, and the second end of the slow-extraction pipeline is connected to the second vacuum pipeline. The flow-limiting device and the first switching valve are both located in the slow-extraction pipeline.

3. The exhaust system according to claim 2, characterized in that, The flow limiting device includes a first flow limiter and a throttle valve.

4. The exhaust system according to claim 1, characterized in that, The exhaust system further includes a first pressure relief pipe, a second pressure relief pipe, and a second switching valve. The inlet end of the first pressure relief pipe is connected to the first vacuum pipeline, the outlet end of the first pressure relief pipe is connected to the second pressure relief pipe, and the second switching valve is disposed between the first pressure relief pipe and the second pressure relief pipe.

5. The exhaust system according to claim 4, characterized in that, The exhaust system also includes a third pressure relief pipe and a third switching valve. The inlet end of the third pressure relief pipe is connected to the first vacuum pipeline, and the outlet end of the third pressure relief pipe is connected to the second pressure relief pipe. The third switching valve is located on the third pressure relief pipe.

6. The exhaust system according to claim 4, characterized in that, The exhaust system further includes a first check valve, which is disposed in the second pressure relief pipe. The first check valve opens the second pressure relief pipe in the direction from the inlet end to the outlet end of the second pressure relief pipe.

7. The exhaust system according to claim 4, characterized in that, The exhaust system further includes a first air supply line and a fourth switching valve. The inlet end of the first air supply line is used to introduce purge gas, and the outlet end of the first air supply line is connected to the second pressure relief pipe so that the purge gas purges the second pressure relief pipe. The fourth switching valve is located in the first air supply line and controls the first air supply line to be open or closed.

8. The exhaust system according to claim 7, characterized in that, The exhaust system further includes at least one of a pressure regulating valve and a flow regulating element, wherein the pressure regulating valve and the flow regulating element are disposed in the first air supply line.

9. The exhaust system according to claim 7, characterized in that, The exhaust system further includes a second one-way valve, which is disposed in the first air supply line. The second one-way valve connects the first air supply line in the direction from the inlet end to the outlet end of the first air supply line.

10. The exhaust system according to any one of claims 1 to 9, characterized in that, The exhaust system also includes a second gas supply line, a fifth switching valve, and a second pressure detection device. The inlet end of the second gas supply line is used to introduce gas, and the outlet end of the second gas supply line is connected to the second vacuum line. The fifth switching valve is located in the second gas supply line, and the second pressure detection device is located in the second vacuum line to detect the pressure value of the second vacuum line. The state of the fifth switching valve changes according to the pressure value detected by the second pressure detection device.

11. The exhaust system according to claim 10, characterized in that, The exhaust system further includes a second flow restrictor disposed in the second air supply line; and / or, the exhaust system further includes a third check valve disposed in the second air supply line, the third check valve connecting the second air supply line in the direction from the inlet end of the second air supply line to the outlet end of the second air supply line.

12. The exhaust system according to any one of claims 1 to 9, characterized in that, The exhaust system also includes a sixth switching valve, the inlet of which is connected to the first sealing detection device, and the outlet of which is connected to the first vacuum pipeline. And / or, the exhaust system further includes a seventh switching valve, the inlet of which is connected to a second sealing detection device, and the outlet of which is connected to the second vacuum line.

13. The exhaust system according to any one of claims 1 to 9, characterized in that, The first pressure detection device includes a first vacuum gauge and a second vacuum gauge, wherein the range of the first vacuum gauge is smaller than the range of the second vacuum gauge; The exhaust system further includes a first branch, a second branch, and an eighth switching valve. The first end of the first branch and the first end of the second branch are both connected to the first vacuum line. The second end of the first branch is connected to the first vacuum gauge. The eighth switching valve is located in the first branch, and the second end of the second branch is connected to the second vacuum gauge. When the pressure value detected by the second vacuum gauge is greater than the second pressure value, the eighth switch valve is in the closed state; when the pressure value detected by the second vacuum gauge is less than or equal to the second pressure value, the eighth switch valve is in the open state.

14. The exhaust system according to claim 13, characterized in that, The first pressure detection device further includes a differential pressure gauge, and the exhaust system further includes a third branch and a ninth switching valve. The first end of the third branch is connected to the first vacuum pipeline, the second end of the third branch is connected to the first end of the differential pressure gauge, the second end of the differential pressure gauge is connected to the external atmosphere, and the ninth switching valve is located in the third branch. When the difference between the pressure value detected by the second vacuum gauge and the atmospheric pressure value is less than the first difference, the ninth switch valve is in the open state.

15. A semiconductor process apparatus, characterized in that, It includes a reaction chamber and an exhaust system as described in any one of claims 1 to 14, wherein the inlet end of the first vacuum line is connected to the reaction chamber.

Images