Laser component and method for producing a laser component

Abstract

The invention relates to a laser component comprising: an edge-emitting semiconductor laser chip having an active zone and having a laser facet adjoining the active zone; and an optical element which is arranged downstream of the laser facet in the emission direction of the edge-emitting semiconductor laser chip. A front face of the edge-emitting semiconductor laser chip and the optical element are interconnected by means of a welded joint which is free of filler materials, and the laser facet is set back in relation to the front face.

Description

[0001] LASER COMPONENT AND METHOD FOR MANUFACTURING A LASER COMPONENT

[0002] This application claims priority from German patent application No. 10 2023 121 985 . 5 of August 16, 2023, the disclosure of which is hereby incorporated by reference into this application.

[0003] The present invention relates to a laser component and a method for producing a laser component.

[0004] BACKGROUND

[0005] Known semiconductor lasers, in particular semiconductor lasers that emit blue light, generally require a hermetically sealed package (housing) to protect the laser facet that emits the laser light from organic substances. This is because organic substances in the area of ​​the laser facet can lead to aging and degradation over a longer period of time. The organic substances accumulate on the laser facet and absorb the optical power when the semiconductor laser is in operation. This reduces the optical output power of the laser. If the absorption exceeds a certain threshold, the laser facet is destroyed. The semiconductor laser is then unusable. For this reason, such semiconductor lasers are generally constructed in a hermetically sealed package to prevent organic substances from depositing on the laser facet.However, such a hermetic housing is complex to manufacture and expensive.

[0006] There is therefore a need to provide a laser component that can overcome at least one of the above-mentioned aspects. Furthermore, there is a need to provide a method for producing such a laser component.

[0007] SUMMARY OF THE INVENTION This need is met by the subject matter of the independent patent claims. Further developments and embodiments of the proposed principle are specified in the subclaims.

[0008] The core of the invention is to specify a laser component which in particular does not require hermetic encapsulation and is nevertheless designed to be stable against ageing. For this purpose, an optical component is arranged in the region in front of the laser facet of a semiconductor chip, the distance between the laser facet and the optical element being so small that organic substances cannot or can only hardly get into the space between the laser facet and the optical element. By means of a highly focused laser, the joining surface between the optical component and the semiconductor chip is melted and the optical component is thus connected to the semiconductor chip. The connection is carried out in particular by welding the optical component to the semiconductor chip using a direct laser welding process.The semiconductor chip is particularly designed such that it comprises an etched laser facet that is set back from a front side of the semiconductor chip. By applying a photoelectrochemical separation process to the semiconductor laser chip, a relatively small distance can be achieved between a separation edge / front side and the etched laser facet, so that the optical component can be welded very close to the facet on this front side.

[0009] Advantages that may arise compared to the state of the art may include:

[0010] No hermetic package / housing is required.

[0011] No organic adhesive is required to bond an optical component to the semiconductor chip.

[0012] Using the photoelectrochemical separation process of the semiconductor laser chip, a relatively small distance can be achieved between a separation edge / front side and the etched laser facet, allowing the optical component to be welded very close to the facet on this front side. This represents a cost advantage because no hermetic package and / or organic adhesive are required.

[0013] Reliability advantage if the optical component can be brought close to the laser facet and / or no organic adhesive is required.

[0014] Improved aging stability if the optical component can be brought close to the laser facet and / or no organic adhesive is required.

[0015] A laser component is specified. During operation, the laser component generates electromagnetic radiation, in particular laser radiation. The laser component is configured to generate electromagnetic radiation with a wavelength that lies, for example, in the wavelength range between infrared radiation and UV radiation. In particular, the electromagnetic radiation can lie in the wavelength range of infrared radiation and / or UV radiation.

[0016] According to at least one embodiment of the laser component, the laser component comprises a semiconductor laser chip. The semiconductor laser chip can, in particular, be an edge-emitting semiconductor laser chip. However, it is also conceivable for the semiconductor laser chip to be formed by a surface-emitting semiconductor laser chip.

[0017] The semiconductor laser chip comprises, for example, a semiconductor body, reflective outer surfaces that form a resonator and electrical connection points for contacting the semiconductor laser chip.

[0018] The semiconductor laser chip comprises a laser facet. During operation, the laser radiation generated by the semiconductor laser chip exits the laser facet. The laser facet is formed, for example, by an outer surface of the semiconductor laser chip that is set back from a front side, for example, by a set-back side surface or top surface.

[0019] The semiconductor laser chip comprises an active zone, which encompasses the area of ​​the laser facet at which the electromagnetic radiation generated during operation leaves the semiconductor laser chip. For example, in the area of ​​the active zone, an active layer of the semiconductor laser chip borders a reflective layer of the semiconductor laser chip, which is part of the resonator of the semiconductor laser chip.

[0020] According to at least one embodiment of the laser component, the laser component comprises an optical element arranged downstream of the semiconductor laser chip at the laser facet. The optical element follows the laser facet of the semiconductor laser chip, in particular in a radiation direction of the semiconductor laser chip.

[0021] This makes it possible for all or at least a large part of the laser radiation leaving the semiconductor laser chip to pass through the optical element and be optically influenced by it.

[0022] The optical element is, for example, an optical element for beam shaping using optical refraction. For example, the optical element is then a lens for focusing the laser radiation. Alternatively or additionally, it is possible that the optical element is a diffractive optical element (also DOE), in which beam shaping is based on the principle of optical diffraction.

[0023] The optical element is formed from a material that is transparent to the laser radiation, such as glass, a semiconductor material, and / or a plastic material. The optical element can also be formed from a ceramic, for example, or comprise a ceramic material, such as ZrO or SiN.

[0024] A gap is formed, at least in part, between the optical element and the laser facet, which gap is filled, for example, with air or another medium. The gap is designed to be so small that organic substances cannot, or can only barely, penetrate the space between the laser facet and the optical element.

[0025] According to at least one embodiment of the laser component, the semiconductor laser chip and the optical element are connected to one another by means of a welded joint. A welded joint is understood here and below to be a mechanical connection that cannot be removed without destruction and is created under the influence of heat and / or pressure between two joining partners of the laser component.

[0026] The welded joint is, in particular, free of any welding consumables. This means that the welded joint is formed solely by the material of the joining partners, which are connected to each other by the weld. The joining partners are therefore directly connected to each other without any additional joining material such as a welding consumable or an adhesive.

[0027] According to at least one embodiment of the laser component, the laser component comprises an edge-emitting semiconductor laser chip with an active zone and a laser facet adjacent to the active zone, and an optical component arranged downstream of the laser facet in the emission direction of the edge-emitting semiconductor laser chip. A front side of the edge-emitting semiconductor laser chip and the optical element are connected to one another by means of a weld joint that is free of welding additives, and the laser facet is set back from the front side.

[0028] The laser component is based on the following considerations, among others. In semiconductor laser components, which are operated in an open atmosphere, for example, a deposition of foreign matter on the laser facet is observed, which leads to degradation of the laser component, for example, through a decrease in light output. The deposition can be caused by dust or suspended matter in the ambient air.

[0029] The laser component described here is based on the idea that arranging the optical element particularly close to the laser facet reduces, inhibits, and / or prevents the deposition of foreign substances from the surrounding atmosphere. The use of a welded joint eliminates the need for connecting materials, which enables particularly cost-effective production of the laser component. Furthermore, no other materials, such as connecting materials, need to be optimized with regard to their optical and / or thermal properties, which in turn allows for particularly simple and cost-effective production.

[0030] Such a possibility is to be provided by the described laser component, in particular for semiconductor laser chips with an etched laser facet, since known semiconductor laser chips with an etched laser facet in particular have a relatively large distance between a front side of the semiconductor laser chip and the laser facet. This large distance is caused in particular by a multi-stage etching process, by means of which the laser facet is etched and the semiconductor chip is separated, and represents a problem with known semiconductor chips, since due to this distance the optical element cannot be arranged close enough to the laser facet to achieve the desired effect of improved aging stability.The large distance can, for example, occur in the form of steps. These are created by a combined dry and wet etching, the actual facet removal, and by a second etching step, a dry etching, which ensures a safety distance from the component end face / front face in order to subsequently separate the semiconductor laser chips by scoring and breaking or by a laser separation process. In known semiconductor chips, this second step in particular requires a particularly large distance of approximately 20 pm between the laser facet and a component end face / front face of the semiconductor chip, since a large safety distance is necessary for the aforementioned separation techniques to protect the laser facet.

[0031] However, it is now proposed to carry out the second etching for singulation and / or in a combined manner for facet release using a different process, namely, for example, a photoelectrochemical process. This allows the substrate of the semiconductor chip to be cut cleanly and smoothly. Using such a photoelectrochemical process, the distance between the laser facet and a component end face / front face of the semiconductor chip can be reduced to a very small value of up to 2 pm, so that an optical element applied to the front face has a correspondingly small distance to the laser facet. Experience has shown that with such a small gap between the laser facet and the optical element, the degradation of the laser facet by organic substances can be drastically reduced.

[0032] According to at least one embodiment of the laser component, the distance between the optical element and the laser facet is at most 10 pm, in particular at most 7 pm or at most 1 pm. Distances of 500 nm and less are also possible. In particular, the smallest distance between the optical element and the laser facet is in the region of the active zone. It has been shown that such small distances ensure that the deposition of foreign substances from the atmosphere on the laser facet is greatly reduced or prevented.

[0033] According to at least one embodiment of the laser component, the welded joint comprises a weld seam and / or a weld spot, which runs in a connection region between the optical element and the front side of the semiconductor chip and which comprises material of the optical element and the semiconductor chip. A weld seam or a weld spot can be formed in any desired shape and size. According to at least one embodiment of the laser component, the welded joint comprises a plurality of weld seams and / or a weld spot.

[0034] According to at least one embodiment of the laser component, the welded joint is arranged between the optical element and the semiconductor laser chip. It is particularly possible for the welded joint between the optical element and the semiconductor laser chip to represent the only connection between these two components of the laser component. The welded joint provides direct physical contact between the optical element and the semiconductor laser chip. In particular, the connection between the optical element and the semiconductor chip is free of any additional connecting material.

[0035] According to at least one embodiment of the laser component, the welded connection comprises a weld seam or a weld spot. A weld seam or a weld spot connects components in a materially bonded manner at a weld joint. A weld joint is understood to be the area in which the components are joined together. In particular, a weld seam is a welded connection along a connecting line or connecting curve, and a weld spot is a welded connection in a flat or point-like area. The components are only materially connected along the connecting line or connecting curve or in the flat or point-like area. In other words, a weld seam or a weld spot is spatially limited to an area of ​​the components in which the components are connected to one another. The weld seam does not connect the components over their entire mutually facing surface, in particular not across their entire surface.

[0036] According to at least one embodiment of the laser component, the welded connection is formed in a planar manner and connects the components over their entire mutually facing surface, in particular planarly.

[0037] According to at least one embodiment, the weld seam does not connect the optical element and the semiconductor laser chip over a large area. In other words, the weld seam is arranged in a spatially limited region between the optical element and the semiconductor laser chip, for example along a line or curve or at a point. The weld seam can, for example, comprise a plurality of concentrically running curves and / or meandering curves which are arranged, for example, in a zigzag pattern between the optical element and the semiconductor laser chip. In this way, it is possible to create a connection between these two components that is as flat as possible.

[0038] According to at least one embodiment, the welded joint comprises material of the optical element and / or the semiconductor laser chip. In particular, the welded joint can be created by melting material of the optical element and the semiconductor laser chip in a predefined contact region, mixing them, and then solidifying again, so that a firm connection between the optical element and the semiconductor laser chip is created in this predefined region, which forms the welded joint.

[0039] According to at least one embodiment, the semiconductor laser chip comprises at least one step, wherein a first surface of the at least one step forms the front side and a second surface of the step, which runs essentially parallel to the first surface, comprises the laser facet. A vertical distance between the first and the second surface can in particular be at most 10 pm. Two or more steps can also be formed between the first and the second surface, wherein the distance between the two furthest apart, essentially parallel surfaces of the steps is in particular at most 10 pm.

[0040] According to at least one embodiment, the semiconductor laser chip comprises precisely one step, wherein a first surface of the first step forms the front side and a second surface of the first step, extending substantially parallel to the first surface, comprises the laser facet. A vertical distance between the first and second surfaces can, in particular, be at most 10 pm.

[0041] According to at least one embodiment, the height of the at least one step is selected such that a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet does not intersect the edge-emitting semiconductor laser chip. In particular, the overall height of all existing steps is selected such that a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet does not intersect the edge-emitting semiconductor laser chip. The dimensioning of the step(s) is intended, in particular, to prevent a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet from intersecting the edge-emitting semiconductor laser chip, resulting in a so-called "cut-off" of the light cone, while the distance between the front side and the laser facet is kept small.

[0042] According to at least one embodiment, the height of the at least one step corresponds to at least half of the semi-axis of a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet in the region of the front side. In particular, the total height of all existing steps corresponds to at least half of the semi-axis of a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet in the region of the front side. The dimensioning of the step(s) is intended in particular to prevent a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet from intersecting the edge-emitting semiconductor laser chip, resulting in a so-called "cut-off" of the light cone, while the distance between the front side and the laser facet is kept small.

[0043] According to at least one embodiment, a substantially opaque or reflective layer is arranged between the front side and the optical element. The opaque or reflective layer can in particular be a regional coating of the optical element and / or the front side. In particular, the welded connection can also comprise material of the opaque or reflective layer. For example, the opaque or reflective layer can be designed such that it absorbs the light used in the welding process particularly well and leads to an improved welding result. A further effect of the opaque or reflective layer can be that an optical path between the semiconductor laser chip and the optical element is interrupted in the region of the front side.

[0044] According to at least one embodiment, a potting compound, in particular a silicone potting compound or a polysiloxane potting compound, is arranged in a gap between the optical element and the laser facet. In particular, the gap between the optical element and the laser facet can be completely filled with the potting compound. This can further increase the aging stability of the laser component, since the risk of organic substances in the area of ​​the laser facet is further reduced.

[0045] According to at least one embodiment of the laser component, the laser component is free of a hermetically sealed housing. This means that the laser component can, for example, comprise a housing that is not hermetically sealed, or the laser component is free of any housing and the components of the laser component are arranged together, for example, on a carrier of the laser component. The omission of a hermetically sealed housing is possible in particular due to the arrangement of the optical element at a short distance from the laser facet and allows the production of particularly compact and cost-effective laser components.

[0046] The semiconductor laser chip can comprise, for example, a reflective layer comprising metal oxides and / or semiconductor oxides at least on the laser facet. The reflective layer then forms part of the resonator of the semiconductor laser chip. The reflective layer can extend over the entire outer sides / top sides of the semiconductor laser chip, wherein in particular at least the front side of the semiconductor laser chip is free of the reflective layer. However, it is also possible for the welded connection to be formed at least in some regions with material of the optical element and the reflective layer. The reflective layer can comprise, for example, silicon dioxide.

[0047] According to at least one embodiment, the semiconductor laser chip comprises a gallium nitride (GaN) substrate or consists largely of GaN. However, it is also possible for the semiconductor chip to comprise or consist of other semiconductor materials, for example, silicon. Other possible materials for at least one substrate of the semiconductor chip can be sapphire, aluminum nitride, or gallium arsenide.

[0048] According to at least one embodiment of the laser component, the laser component comprises a carrier or a carrier substrate. The remaining components of the laser component, in particular the semiconductor laser chip, are fastened to the carrier. The carrier substrate can serve both for electrical control, mechanical fastening and / or as a heat sink for the laser component. A submount can also be arranged between the semiconductor laser chip and the carrier substrate, which submount forms a raised area for the semiconductor laser chip in order to prevent a so-called "cut-off" of a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet by the carrier substrate. According to at least one embodiment, the optical element is arranged at a distance from the carrier substrate and wherein, in particular, the optical element is arranged at a distance from the submount.In particular, the optical element is only in contact with the semiconductor laser chip. This prevents stresses occurring between the components in the laser device from causing the optical element to detach.

[0049] Furthermore, a method for producing a laser component is specified. In particular, a laser component described here can be produced by means of the method. This means that all features disclosed for the laser component are also disclosed for the method, and vice versa.

[0050] According to at least one embodiment of the method, an edge-emitting semiconductor laser chip having an active zone and a laser facet adjacent to the active zone is first provided.

[0051] According to at least one embodiment of the method, an optical element is provided. The optical element is arranged downstream of the laser facet in the emission direction of the edge-emitting semiconductor laser chip on a front side of the edge-emitting semiconductor laser chip on the laser facet.

[0052] According to at least one embodiment of the method, in a further method step, the front side of the semiconductor laser chip and the optical element are connected in a connection region by means of a welding process, wherein the welding process is carried out without additives.

[0053] According to at least one embodiment of the method, the laser facet is set back from the front side of the semiconductor laser chip.

[0054] According to at least one embodiment of the method, the method comprises the following steps: providing an edge-emitting semiconductor laser chip having an active zone and a laser facet adjacent to the active zone;

[0055] Providing an optical element;

[0056] Arranging the optical element in the emission direction of the edge-emitting semiconductor laser chip downstream of the laser facet on a front side of the edge-emitting semiconductor laser chip; and

[0057] Joining the front side and the optical element by means of a welding process , the welding process being carried out without welding consumables ; the laser facet being set back from the front side .

[0058] The semiconductor laser chip and the optical element can be connected to each other directly at an interface between the front side of the semiconductor laser chip and the optical element by means of the welding process.

[0059] According to at least one embodiment of the method, connecting the semiconductor laser chip and the optical element in a connecting region by means of a welding process comprises creating a weld seam or a weld spot. In particular, the weld seam or the weld spot between the optical element and the semiconductor laser chip is the only connection between these two components of the laser component. In particular, the connection between the optical element and the semiconductor chip is free of additional connecting material.

[0060] According to at least one embodiment of the method, the weld seam or the weld spot is not created over a large area between the optical element and the semiconductor laser chip. In particular, the weld seam or the weld spot is created in a spatially limited area between the optical element and the front side of the semiconductor laser chip, for example along a line or curve or at just one point. According to at least one embodiment of the method, the welding process is carried out by means of a laser beam that is focused in the area between the front side and the optical element. For this purpose, a laser beam is guided through the optical element, for example, and focused at the interface between the components to be joined. This creates an area of ​​high power density at the interface in which the joining partners melt locally.The laser beam is then moved along a curve, for example, so that a weld seam is created which is formed with materials from the joining partners.

[0061] For example, a welding process such as that offered by Primoceler for joining glass can be used. However, alternative laser welding processes are also possible. For example, you could use a friction welding process to create the welded joint, or anodic bonding, which, in light of the description, should also be understood as a welding process.

[0062] BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples which will be described in detail in conjunction with the accompanying drawings.

[0064] Fig. 1 shows a sectional view of a laser device according to some aspects of the proposed principle;

[0065] Fig. 2 shows a sectional view of another embodiment of a laser component according to some aspects of the proposed principle;

[0066] Fig. 3 shows a sectional view of another embodiment of a laser component according to some aspects of the proposed principle; Fig. 4 shows a sectional view of another embodiment of a laser component according to some aspects of the proposed principle;

[0067] Fig. 5 shows a sectional view of another embodiment of a laser component according to some aspects of the proposed principle;

[0068] Fig. 6 shows a sectional view of another embodiment of a laser component according to some aspects of the proposed principle; and

[0069] Fig . 7 shows steps of a manufacturing method of a laser component according to some aspects of the proposed principle .

[0070] DETAILED DESCRIPTION

[0071] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements can be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be combined with one another without thereby impairing the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice slight deviations from the ideal shape can occur without, however, contradicting the inventive idea.

[0072] Furthermore, the individual figures, features, and aspects are not necessarily shown in the correct size, and the proportions between the individual elements may not always be correct. Some aspects and features are emphasized by being shown enlarged. However, terms such as "top", "above", "below", "below", "larger", "smaller", and the like are correctly represented with reference to the elements in the figures. This makes it possible to infer such relationships between the elements from the illustrations.

[0073] The schematic view of Figure 1 shows a sectional view of a laser component 100. The laser component 100 comprises an edge-emitting semi-elliptical laser chip 1 and an optical element 2, which is attached to a front side 4 of the semi-elliptical laser chip 1 by means of a welded joint 3.

[0074] The semiconductor laser chip 1 comprises an active zone 11 and a laser facet 1a adjacent to the active zone, from which laser facet 1a the semiconductor laser chip 1 emits laser light L during operation of the laser component 100. The semiconductor chip 1 is designed such that the laser facet 1a is set back from the front side 4 and is therefore spaced apart from the front side by a distance d. This circumstance can result in particular from the fact that an etching process is used to produce the laser facet 1a during production of the semiconductor laser chip 1, by means of which step 9 with a height h and a depth d is etched into the semiconductor laser chip 1. The step 9 forms a first surface 10a which forms the front side 4 and a second surface 10b which runs essentially parallel to the first surface 10a and comprises the laser facet 1a.

[0075] The arrangement or fastening of the optical element 2 on the first surface 10a or front side 4 results in the optical element 2 being arranged downstream of the laser facet 1a in the radiation direction of the edge-emitting semiconductor laser chip 1 and being spaced from the laser facet 1a by a distance d which, in the case shown, corresponds to the depth of the step 9.

[0076] The dimensions d&h of the step 9 are selected such that a deposition of foreign substances from the atmosphere on the laser facet is greatly reduced or prevented, and that a light cone emitted by the edge-emitting semiconductor laser chip from the laser facet does not intersect the edge-emitting semiconductor laser chip, i.e. there is no so-called "cut off" of the light cone. The optical element 2 and the semiconductor laser chip are connected to one another at the front side 4 of the edge-emitting semiconductor laser chip 1 and the optical element 2 by means of a weld 3 which is free of welding additives. The weld 3 can in particular be formed by a weld seam or a weld spot and can only comprise material of the optical element 2 and the semiconductor laser chip 1.

[0077] Figure 2 shows a sectional view of a further embodiment of a laser component according to some aspects of the proposed principle. In addition to the embodiment shown in Figure 1, the semiconductor laser chip 1 comprises a reflective layer 12 which comprises metal oxides and / or semiconductor oxides. The reflective layer 12 forms part of the resonator of the semiconductor laser chip 1. The reflective layer can extend over the entire top side of the semiconductor laser chip, wherein the front side 4 of the semiconductor laser chip 1 is free of the reflective layer 12. In the case shown, the reflective layer 12 extends over the top side of the semiconductor laser chip and over the step 9 up to the optical element 2.The front side 4 of the semiconductor laser chip 1 can in particular be free of the reflective layer 12, since during the production of the semiconductor chip 1 a singulation process can be carried out along the front side 4, for example after a coating with the reflective layer 12.

[0078] Figure 3 shows a sectional view of a further embodiment of a laser component according to some aspects of the proposed principle. In addition to the embodiment shown in Figure 1, the laser component 100 comprises a carrier substrate 8, on which the semiconductor laser chip 1 is fastened. The carrier substrate 8 can serve both for electrical control, mechanical fastening and / or as a heat sink for the laser component 100. Between the semiconductor laser chip 1 and the carrier substrate 8, a submount 16 is also arranged, which forms a raised area for the semiconductor laser chip 1 in order to prevent a so-called "cut-off" of a light cone L emitted by the edge-emitting semiconductor laser chip from the laser facet by the carrier substrate 8. The optical element 2 is arranged at a distance from the carrier substrate 8 and at a distance from the submount 16. In particular, the optical element 2 is only in contact with the semiconductor laser chip 2 .This can prevent stresses occurring between the components in the laser component 100 from leading to detachment of the optical element 2.

[0079] Figure 4 shows a sectional view of a further embodiment of a laser component according to some aspects of the proposed principle. In particular, Fig. 4 shows how substrate modes that can emerge from the front side 4 of the semiconductor laser chip 1 and can be disruptive in visualization applications are masked out. For this purpose, the optical element 2 is coated with an opaque or reflective coating 13 before it is welded to the front side. This coating 13 is absorbent or reflective for the laser radiation L in order to prevent an optical path from the front side 4 into the optical element 2.

[0080] Figure 5 shows a sectional view of a further embodiment of a laser component according to some aspects of the proposed principle. Fig. 5 shows an embodiment with a potting compound 15 that fills the gap 14 between the optical element 2 and the laser facet 1a. This provides additional protection for the laser facet 1a by filling the air gap between the laser facet 1a and the optical element 2. The potting compound 15 can, in particular, be a temperature-resistant and, in particular, UV-stable material, such as, for example, a silicone.

[0081] Figure 6 shows a sectional view of a further embodiment of a laser component according to some aspects of the proposed principle. In contrast to the embodiment shown in Figure 1, the semiconductor laser chip 1 has not just one step 9, but a first and a second step 9a, 9b. The first and the second step each have a height h1, h2 and a depth d1, d2, wherein the total depth d and the total height h are designed such that deposition of foreign substances from the atmosphere on the laser facet is greatly reduced or prevented, and that a light cone L emitted by the edge-emitting semiconductor laser chip from the laser facet does not intersect the edge-emitting semiconductor laser chip, thus no so-called "cut-off" of the light cone results.

[0082] By way of example, one or two steps are shown in the figures due to which the laser facet la is set back relative to the front side 4, however it is also possible that the laser facet la is set back relative to the front side 4 due to more than 2 steps, or that the laser facet la is set back in a corresponding manner relative to the front side 4 due to differently shaped recesses.

[0083] In conjunction with the schematic representation of Figure 1, an embodiment of a method described here is explained in more detail in Figure 7.

[0084] In the method, a semiconductor laser chip 1 is first provided. The semiconductor laser chip 1 is, for example, an edge-emitting or a surface-emitting semiconductor laser chip. The semiconductor laser chip comprises a laser facet 1a, through which the laser radiation L generated in the semiconductor laser chip 1 leaves the semiconductor laser chip during operation.

[0085] As shown in Figure 2, a reflective layer 12 is formed, for example, on the laser facet 1a. The reflective layer 12 forms part of the resonator of the semiconductor laser chip 1. The reflective layer 12 comprises, for example, metal oxides and / or semiconductor oxides, in particular alternating layers with different refractive indices.

[0086] For example, the outermost layer of the reflective layer may be formed with a material such as silicon dioxide.

[0087] Furthermore, an optical element 2 is provided. The optical element 2 can be provided for beam shaping of the laser radiation, which can take place, for example, by refraction and / or diffraction. The optical element 2 is formed, for example, with a glass. The optical element 2 is arranged on a front side 4 of the semiconductor laser chip 1 as close as possible to the laser facet 1a set back from the front side 4, so that a distance d between the laser facet and the optical element 2 is at most 10 pm, in particular at most 7 pm.

[0088] Furthermore, a laser 5 is provided which generates laser radiation 7. The laser radiation 7 is focused, for example via an optics 6, onto the interface between the optical element 2 and the front side 4 of the semiconductor laser chip 1, so that a weld 3 is formed in the connection region of the optical element 2 and the front side 4 after the molten material has solidified.

[0089] LIST OF REFERENCE SYMBOLS

[0090] 1 semiconductor laser chip la Laserfacette

[0091] 11 active zones

[0092] 12 reflective layer

[0093] 2 optical element

[0094] 3 Welded joint

[0095] 5 lasers

[0096] 6 Optics

[0097] 7 Laser beam

[0098] 8 carriers

[0099] 9, 9a, 9b level

[0100] 10a , 10b Area

[0101] 14 gap

[0102] 15 Casting

[0103] 16 Submount d Distance h Height L Beam

Claims

PATENT CLAIMS 1. Laser component (100) comprising an edge-emitting semiconductor laser chip (1) with an active zone (11) and a laser facet (1a) adjacent to the active zone; and an optical element (2) which is arranged downstream of the laser facet (1a) in the emission direction of the edge-emitting semiconductor laser chip (1); wherein a front side (4) of the edge-emitting semiconductor laser chip (1) and the optical element (2) are connected to one another by means of a weld joint (3) which is free of welding additives; and wherein the laser facet (1a) is set back from the front side (4).

2. Laser component according to the preceding claim, wherein a distance (d) between the optical element (2) and the laser facet (1a) is at most 10 pm, in particular at most 7 pm.

3. Laser component according to one of the preceding claims, wherein the welded joint (3) comprises a weld seam or a weld point.

4. Laser component according to one of the preceding claims, wherein the welded joint (3) comprises material of the optical element (2) and the semiconductor laser chip (1).

5. Laser component according to one of the preceding claims, wherein the semiconductor laser chip (1) has at least one step (9, 9a, 9b), wherein a first surface (10a) of the at least one step (9) forms the front side (4) and a second surface (10b) of the at least one step (9) running substantially parallel to the first surface (10a) comprises the laser facet (1a).

6. Laser component according to one of the preceding claims, wherein the semiconductor laser chip (1) has exactly one step (9), wherein a first surface (10a) of the step (9) forms the front side (4) and a second surface (10b) of the step (9) running substantially parallel to the first surface (10a) comprises the laser facet (1a).

7. Laser component according to one of the preceding claims 5 or 6, wherein a height (h) of the at least one step (9) is selected such that a light cone (L) emitted by the edge-emitting semiconductor laser chip (1) from the laser facet (1a) does not intersect the edge-emitting semiconductor laser chip (1).

8. Laser component according to one of the preceding claims 5 or 6, wherein a height (h) of the at least one step (9) corresponds to at least half of the semi-axis of a light cone (L) emitted by the edge-emitting semiconductor laser chip (1) from the laser facet (1a) in the region of the front side (4).

9. Laser component according to one of the preceding claims, wherein a substantially opaque or reflective layer (13) is arranged between the front side (4) and the optical element (2).

10. Laser component according to the preceding claim, wherein a potting compound (15), in particular silicone or polysiloxane potting compound, is arranged in a gap (14) between the optical element (2) and the laser facet (1a).

11. Laser component according to one of the preceding claims, which is free from a hermetically sealed housing.

12. Laser component according to one of the preceding claims, wherein the semiconductor laser chip (1) comprises a reflective layer (12) on the laser facet (1a), which layer comprises in particular metal oxides and / or semiconductor oxides.

13. Laser component according to one of the preceding claims, wherein the semiconductor laser chip (1) comprises a GaN substrate.

14. Laser component according to one of the preceding claims, wherein the semiconductor laser chip (1) is arranged on a carrier substrate (8), and wherein in particular a submount (16) is arranged between the semiconductor laser chip (1) and the carrier substrate (8).

15. Laser component according to the preceding claim, wherein the optical element (2) is arranged at a distance from the carrier substrate (8), and wherein in particular the optical element (2) is arranged at a distance from the submount (16).

16. A method for producing a laser component comprising the steps: Providing an edge-emitting semiconductor laser chip (1) with an active zone (11) and a laser facet (1a) adjacent to the active zone; Providing an optical element (2); Arranging the optical element (2) in the emission direction of the edge-emitting semiconductor laser chip (1) downstream of the laser facet (1a) on a front side (4) of the edge-emitting semiconductor laser chip (1); and Connecting the front side (4) and the optical element (2) by means of a welding process, wherein the welding process is carried out without welding additives, wherein the laser facet (1a) is set back relative to the front side (4).

17. Method according to the preceding claim, wherein the welding process is carried out by means of a laser beam (7) which is focused in the area between the front side (4) and the optical element (2).

18. Method according to the previous claim, wherein material is melted in the area between the front side (4) and the optical element (2), which material forms a welded joint (3) after solidification.

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