Light-emitting substrate and manufacturing method therefor, backlight module, and display apparatus

Abstract

A light-emitting substrate, comprising a base, a light-emitting device, a color conversion layer, and a scattering layer. The base has a first surface and a second surface that are arranged opposite to each other, and a first groove is formed on the first surface of the base. The light-emitting device is arranged on the first surface of the base. The light-emitting device comprises a light-emitting area, the orthographic projection of the light-emitting area of the light-emitting device on the base is located within the range of the orthographic projection of the color conversion layer on the base, and the orthographic projection of the light-emitting area of the light-emitting device on the base is located within the range of the orthographic projection of the scattering layer on the base. The color conversion layer is arranged on the side of the light-emitting device facing the second surface. The scattering layer is arranged on the side of the color conversion layer away from the light-emitting device. At least one of the light-emitting device, the color conversion layer, and the scattering layer is located in the first groove.

Description

Luminescent substrate and preparation method thereof, backlight module, and display device

[0001] This application claims priority to Chinese patent application No. 202311119240.9, filed on August 31, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a preparation method thereof, a backlight module, and a display device. Background Art

[0003] With the development of light-emitting diode (LED) technology, light-emitting substrates using submillimeter or even micron-scale light-emitting diodes (LEDs) have become widely used. This allows products such as liquid crystal displays (LCDs) to achieve contrast levels comparable to those of organic light-emitting diode (OLED) displays while retaining the technical advantages of LCDs. This improves display quality and provides users with a superior visual experience.

[0004] Summary of the Invention

[0005] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a substrate, a light-emitting device, a color conversion layer, and a scattering layer. The substrate has a first surface and a second surface disposed opposite each other, and the first surface of the substrate is provided with a first groove. The light-emitting device is disposed on the first surface of the substrate. The light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the orthographic projection of the color conversion layer; the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the orthographic projection of the scattering layer. The color conversion layer is disposed on the side of the light-emitting device facing the second surface. The scattering layer is disposed on the side of the color conversion layer facing away from the light-emitting device. At least one of the light-emitting device, the color conversion layer, and the scattering layer is located within the first groove.

[0006] In some embodiments, the light-emitting substrate further includes a first circuit layer disposed on the first surface of the substrate. The first circuit layer includes a first solder pad and a second solder pad. The first solder pad, the second solder pad, and the light-emitting device are disposed within the first groove. The light-emitting device is connected to the first solder pad and the second solder pad.

[0007] Alternatively, the light-emitting substrate further includes a second circuit layer and a third circuit layer. The second circuit layer is disposed on the first surface of the substrate. The second circuit layer includes a first solder pad. The first solder pad and the light-emitting device are disposed within the first groove. The light-emitting device is connected to the first solder pad. The third circuit layer is disposed on a side of the light-emitting device away from the substrate. The third circuit layer includes a second solder pad, and the light-emitting device is also connected to the second solder pad.

[0008] In some embodiments, the light-emitting substrate includes a first circuit layer, a first insulating layer, and a first reflective layer. The first insulating layer is disposed on a side of the light-emitting device away from the substrate. The first reflective layer is disposed on a side of the first insulating layer away from the substrate. Alternatively, the light-emitting substrate includes a second circuit layer and a third circuit layer, and further includes a first insulating layer disposed between the second circuit layer and the third circuit layer.

[0009] In some embodiments, the transmittance of the first insulating layer is greater than or equal to 80%, and the first insulating layer fills the first groove. The light-emitting substrate further includes a reflective structure disposed on at least one side of the circumference of the light-emitting device. The reflective structure is configured to reflect light emitted from the light-emitting device in the circumferential direction so that the light emitted from the light-emitting device in the circumferential direction is emitted toward the second surface of the substrate.

[0010] In some embodiments, the reflective structure includes a second groove and a plurality of reflective balls, wherein the second groove is disposed on the first surface of the substrate, and the plurality of reflective balls are disposed in the second groove.

[0011] In some embodiments, the cross-section of the second groove is approximately an isosceles triangle, and the vertex angle of the isosceles triangle is between 45° and 55°. The cross-section is approximately perpendicular to the boundary between the second groove and the first groove. And / or, the maximum depth of the second groove in the first direction is greater than or equal to the thickness of the light-emitting device in the first direction. The first direction is approximately perpendicular to the second surface.

[0012] In some embodiments, the material of the reflective sphere includes photonic crystals.

[0013] In some embodiments, the reflective structure includes a plurality of dielectric holes and a plurality of reflective columns. The plurality of dielectric holes are arrayed on the first surface of the substrate. One reflective column is disposed in one dielectric hole.

[0014] In some embodiments, the angle between the central axis of the dielectric hole and the first direction is 20° to 35°. The first direction is substantially perpendicular to the second surface. Alternatively, the maximum depth of the dielectric hole in the first direction is greater than or equal to the thickness of the light-emitting device in the first direction.

[0015] In some embodiments, the material of the reflective pillars includes photonic crystals.

[0016] In some embodiments, the light-emitting substrate further includes a fourth circuit layer disposed on the first surface of the substrate. The fourth circuit layer includes a first solder pad and a second solder pad. The first solder pad and the second solder pad are disposed on opposite sides of the first groove. The orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is within the orthographic projection of the first groove on the second surface of the substrate. Furthermore, the light-emitting device is connected to the first and second solder pads outside the first groove.

[0017] In some embodiments, the light-emitting substrate further includes a second reflective layer, which is disposed on a side of the light-emitting device away from the substrate and at least covers the light-emitting device.

[0018] In some embodiments, the light-emitting substrate further includes a dimming structure disposed on the second surface of the substrate. The dimming structure is configured to adjust the amount of light emitted from a first region and a second region. The first region is the region of the substrate where the first groove is located, and the second region is the region of the substrate excluding the first groove.

[0019] In some embodiments, the dimming structure includes a first grating disposed on the second surface of the substrate, wherein a duty cycle of the first grating in the first region is smaller than a duty cycle of the first grating in the second region.

[0020] In some embodiments, in the first region, the slits of the first grating are approximately equal. Furthermore, two adjacent first grooves are symmetrical with respect to the first axis in a second direction, where the second direction is approximately perpendicular to the direction in which the slits of the first grating extend. In the second region, the slits of the first grating gradually increase in size from the first groove toward the first axis.

[0021] In some embodiments, the dimming structure includes a light guide plate and a plurality of mesh dots. The light guide plate is disposed on the second surface of the substrate. A plurality of third grooves are defined on a side of the light guide plate facing away from the substrate. The mesh dots are located within the third grooves. The density of the mesh dots in the first region is greater than the density of the mesh dots in the second region.

[0022] In some embodiments, two adjacent first grooves are symmetrical with respect to the second axis, and in the second region, the density of the dots gradually increases from the first grooves toward the second axis.

[0023] In some embodiments, the light-emitting substrate further comprises a second grating disposed within the first groove and between the color conversion layer and the scattering layer. The second grating is configured to transmit light having a polarization direction substantially parallel to a third direction, wherein the third direction is substantially parallel to the second surface.

[0024] In some embodiments, the color conversion layer is disposed in the first groove. The light-emitting substrate further includes a first encapsulation layer, which is disposed on a side of the color conversion layer away from the substrate.

[0025] In some embodiments, a sidewall on at least one side of the first groove has a step structure.

[0026] In some embodiments, the orthographic projections of the light-emitting areas of at least two light-emitting devices on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

[0027] In some embodiments, a plurality of the light-emitting devices are arranged in an array, and the orthographic projections of the light-emitting areas of at least two light-emitting devices in the same row and / or column on the second surface of the substrate are within the range of the orthographic projections of the same first groove on the second surface of the substrate.

[0028] In some embodiments, the light-emitting substrate includes a light-emitting unit including a plurality of light-emitting devices connected in series and / or in parallel. Orthographic projections of the light-emitting areas of the plurality of light-emitting devices in the same light-emitting unit on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

[0029] In some embodiments, the light emitting substrate further includes a third reflective layer, wherein the third reflective layer covers the first surface of the substrate and exposes at least a portion of the first groove.

[0030] In some embodiments, the light-emitting substrate further includes a reflective prism, and the reflective prism is disposed between the third reflective layer and the substrate.

[0031] In another aspect, a backlight module is provided. The backlight module comprises a light-emitting substrate according to any of the above embodiments, a diffuser, and a composite film. The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other. The diffuser is disposed on the light-emitting side of the light-emitting substrate. The composite film is disposed on a side of the diffuser away from the light-emitting substrate.

[0032] In another aspect, a display device is provided. The display device comprises a backlight module according to any of the above embodiments and a display panel. The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other, and the display panel is disposed on a side of the composite film in the backlight module that is away from the light-emitting substrate.

[0033] In some embodiments, the light-emitting substrate includes a second grating. The display panel includes a liquid crystal layer and a first polarizer, wherein the first polarizer is disposed on a side of the liquid crystal layer away from the light-emitting substrate. The transmission axis of the first polarizer is approximately perpendicular or approximately parallel to the polarization direction of the light selectively transmitted by the second grating.

[0034] In another aspect, a method for preparing a light-emitting substrate is provided. The method for preparing a light-emitting substrate is used to prepare the light-emitting substrate of any of the above embodiments, and the method comprises:

[0035] A first groove is formed on a substrate. The substrate has a first surface and a second surface that are opposite to each other; and the first surface of the substrate is provided with the first groove.

[0036] A scattering layer, a color conversion layer, and a light-emitting device are formed. The color conversion layer is disposed on the side of the light-emitting device facing the second surface. The light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the orthographic projection of the color conversion layer on the substrate. The scattering layer is disposed on a side of the color conversion layer away from the light-emitting device; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the orthographic projection of the scattering layer on the substrate. At least one of the light-emitting device, the color conversion layer, and the scattering layer is located within the first groove.

[0037] In some embodiments, forming the scattering layer, the color conversion layer, and the light-emitting device includes: sequentially forming the scattering layer and the color conversion layer within the first groove; forming a first encapsulation layer on a side of the color conversion layer facing away from the substrate; forming a first circuit layer on a side of the first encapsulation layer facing away from the substrate; the first circuit layer includes a first solder pad and a second solder pad; the first solder pad and the second solder pad are disposed within the first groove; and forming a light-emitting device within the first groove; the light-emitting device is connected to the first solder pad and the second solder pad.

[0038] In some embodiments, forming a scattering layer, a color conversion layer, and a light-emitting device includes: sequentially forming a scattering layer and a color conversion layer within the first groove; forming a first encapsulation layer on a side of the color conversion layer facing away from the substrate; forming a second circuit layer on a side of the first encapsulation layer facing away from the substrate; the second circuit layer including a first solder pad; the first solder pad being disposed within the first groove; forming a light-emitting device within the first groove; the light-emitting device being connected to the first solder pad; and forming a third circuit layer on a side of the light-emitting device facing away from the substrate; the third circuit layer including a second solder pad; the light-emitting device also being connected to the second solder pad.

[0039] In some embodiments, forming the scattering layer, the color conversion layer, and the light-emitting device further includes forming a first insulating layer. If the light-emitting substrate includes a first circuit layer, the first insulating layer is disposed on a side of the light-emitting device away from the substrate. If the light-emitting substrate includes a third circuit layer, the first insulating layer is disposed between the second circuit layer and the third circuit layer.

[0040] In some embodiments, the first insulating layer fills the first groove. After forming the first groove, the preparation method further includes: forming a second groove; the second groove is disposed on the first surface of the substrate and is located on at least one side of the first groove in a circumferential direction; and filling the second groove with a reflective ball.

[0041] In some embodiments, the first insulating layer fills the first groove. After forming the first groove, the manufacturing method further includes: forming a plurality of dielectric holes; the plurality of dielectric holes are disposed on the first surface of the substrate and located on at least one side of the circumference of the first groove; and filling the dielectric holes with reflective pillars; one reflective pillar is disposed in each dielectric hole.

[0042] In some embodiments, forming a scattering layer, a color conversion layer, and a light-emitting device includes: sequentially forming a scattering layer and a color conversion layer within the first groove; forming a first encapsulation layer on a side of the color conversion layer remote from the substrate; forming a fourth circuit layer on a side of the first encapsulation layer remote from the substrate; the fourth circuit layer including a first solder pad and a second solder pad; the first and second solder pads being disposed on opposite sides of the first groove; and forming a light-emitting device on a side of the fourth circuit layer remote from the substrate; the light-emitting device being connected to the first and second solder pads outside the first groove; and an orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate being within the range of the orthographic projection of the first groove on the second surface of the substrate.

[0043] In some embodiments, the preparation method further includes forming a first grating on the second surface of the substrate. The duty ratio of the first grating in the first region is smaller than the duty ratio of the first grating in the second region. The first region is the region of the substrate where the first groove is located, and the second region is the region of the substrate excluding the first groove.

[0044] In some embodiments, the manufacturing method further includes: forming a light guide plate on the second surface of the substrate; the light guide plate having a plurality of third grooves on a side away from the substrate; forming dots in the third grooves; the density of the dots in a first region is greater than the density of the dots in a second region; the first region is the region of the substrate where the first grooves are located, and the second region is the region of the substrate excluding the first grooves.

[0045] In some embodiments, during the process of forming the scattering layer, the color conversion layer, and the light-emitting device, a second grating is further formed. The second grating is disposed within the first groove and between the color conversion layer and the scattering layer. The second grating is configured to transmit light whose polarization direction is substantially parallel to a third direction, wherein the third direction is substantially parallel to the second surface.

[0046] In some embodiments, forming the first groove on the substrate includes etching the substrate to form a first preliminary groove, and etching a sidewall of at least one side of the first preliminary groove so that the sidewall of at least one side of the first preliminary groove forms a step structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0048] FIG1 is a structural diagram of a display device according to some embodiments;

[0049] FIG2 is a structural diagram of another display device according to some embodiments;

[0050] FIG3 is an exploded view of a display device according to some embodiments;

[0051] FIG4 is a cross-sectional view of a display device according to some embodiments;

[0052] FIG5 is an arrangement diagram of light-emitting devices of a light-emitting substrate according to some embodiments;

[0053] FIG6 is an arrangement diagram of light-emitting devices of another light-emitting substrate according to some embodiments;

[0054] FIG7 is a structural diagram of a light-emitting substrate according to some embodiments;

[0055] FIG8 is a structural diagram of another light-emitting substrate according to some embodiments;

[0056] FIG9 is a structural diagram of yet another light-emitting substrate according to some embodiments;

[0057] FIG10 is a structural diagram of another light-emitting substrate according to some embodiments;

[0058] FIG11 is a structural diagram of another light-emitting substrate according to some embodiments;

[0059] FIG12 is a structural diagram of another light-emitting substrate according to some embodiments;

[0060] FIG13 is a structural diagram of another light-emitting substrate according to some embodiments;

[0061] FIG14 is a structural diagram of another light-emitting substrate according to some embodiments;

[0062] FIG15 is a circuit diagram of a light-emitting substrate according to some embodiments;

[0063] FIG16 is a circuit diagram of another light-emitting substrate according to some embodiments;

[0064] FIG17 is a circuit diagram of data line connections of a light-emitting substrate according to some embodiments;

[0065] FIG18 is a top view of the light-emitting substrate shown in FIG11;

[0066] FIG19 is a top view of the light-emitting substrate shown in FIG12;

[0067] FIG20 is a diagram showing simulation results of the light-emitting substrate shown in FIG11;

[0068] FIG21 is a diagram showing simulation results of the light-emitting substrate shown in FIG12 ;

[0069] FIG22 is a structural diagram of a first grating according to some embodiments;

[0070] FIG23 is a structural diagram of a rectangular grating according to some embodiments;

[0071] FIG24 is a structural diagram of a tilted grating according to some embodiments;

[0072] FIG25 is a structural diagram of a blazed grating according to some embodiments;

[0073] FIG26 is a structural diagram of a two-dimensional grating according to some embodiments;

[0074] FIG27 is a structural diagram of another light-emitting substrate according to some embodiments;

[0075] FIG28 is a structural diagram of yet another light-emitting substrate according to some embodiments;

[0076] 29 to 38 are flow charts of methods for preparing a light-emitting substrate according to some embodiments;

[0077] 39 to 45 are diagrams showing steps of a method for preparing a light-emitting substrate according to some embodiments. DETAILED DESCRIPTION

[0078] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0079] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0080] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0081] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0082] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0083] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0084] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0085] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0086] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0087] As used herein, "parallel," "perpendicular," and "equal" include the stated conditions and conditions that are similar to the stated conditions, within an acceptable range of deviations as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "equal" includes both absolute equality and approximate equality, where the acceptable range of deviations for approximate equality may include, for example, a difference between two conditions that is less than or equal to 5% of either condition.

[0088] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0089] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0090] In the embodiments of the present disclosure, the first node, the second node, the first control node, the second control node and other nodes do not represent actual existing components, but represent the junction points of related electrical connections in the circuit diagram. That is, these nodes are nodes that are equivalent to the junction points of related electrical connections in the circuit diagram.

[0091] In the embodiments of the present disclosure, the control electrode of each thin film transistor is the gate of the transistor, the first electrode is one of the source and drain of the thin film transistor, and the second electrode is the other of the source and drain of the thin film transistor. Since the source and drain of the thin film transistor can be symmetrical in structure, the source and drain thereof can be structurally indistinguishable, that is, the first electrode and the second electrode of the thin film transistor in the embodiments of the present disclosure can be structurally indistinguishable. For example, in the case where the transistor is a P-type transistor, the first electrode of the transistor is the source and the second electrode is the drain; for example, in the case where the transistor is an N-type transistor, the first electrode of the transistor is the drain and the second electrode is the source.

[0092] In the embodiments of the present disclosure, the capacitor may be a capacitive device fabricated separately through a process, for example, by fabricating specialized capacitive electrodes, each of which may be implemented through a metal layer, a semiconductor layer (e.g., doped polysilicon), etc. The capacitor may also be a parasitic capacitor between transistors, or implemented through the transistor itself and other devices or circuits, or through the parasitic capacitance between circuits within the circuit itself.

[0093] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device 1000 , which may be any device that displays an image, whether in motion (eg, video) or stationary (eg, still image), and whether textual or graphic.

[0094] For example, referring to Figures 1 and 2, the display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a virtual reality (VR) device, etc.

[0095] For example, as shown in FIG1 , the display device 1000 may be a portable display product; for example, the display device 1000 may be the mobile phone shown in FIG1 . For another example, referring to FIG2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be the watch shown in FIG2 .

[0096] It should be noted that, depending on different application scenarios, the shape of the display surface of the display device 1000 is not unique. The shape of the display surface of the display device 1000 can be any one of circular, elliptical or polygonal, which is not specifically limited in the embodiments of the present disclosure.

[0097] In some embodiments, referring to FIG. 3 , the display device 1000 may be a liquid crystal display (LCD).

[0098] In some examples, referring to FIG. 3 and FIG. 4 , the display device 1000 includes a backlight module 400 and a display panel 200 .

[0099] Exemplarily, referring to FIG. 3 and FIG. 4 , the backlight module 400 includes a light-emitting substrate 100 .

[0100] As shown in Figures 3 and 4 , the light-emitting substrate 100 has a light-emitting side and a non-light-emitting side. The light-emitting side refers to the side of the light-emitting substrate 100 from which light is emitted (the upper side of the light-emitting substrate 100 in Figure 4 ), while the non-light-emitting side refers to the side opposite the light-emitting side (the lower side of the light-emitting substrate 100 in Figure 4 ). The display panel 200 is disposed on the light-emitting side of the light-emitting substrate 100.

[0101] The light-emitting substrate 100 includes a plurality of light-emitting devices 10, which may include Micro LEDs and / or Mini LEDs. It should be noted that the size (e.g., length) of a Micro LED is less than 50 microns, for example, 10 to 50 microns. The size (e.g., length) of a Mini LED is 50 to 150 microns, for example, 80 to 120 microns.

[0102] In addition, referring to Figures 3, 5 and 6, a plurality of light-emitting devices 10 are arranged in an array. For example, as shown in Figure 5, a plurality of light-emitting devices 10 are arranged in multiple rows and columns, each row including at least two light-emitting devices 10 arranged along the row direction X, and each column including at least two light-emitting devices 10 arranged along the column direction Y. And the light-emitting devices 10 in two adjacent rows are staggered in the column direction Y. For another example, as shown in Figure 6, a plurality of light-emitting devices 10 are arranged in multiple rows and columns, each row including at least two light-emitting devices 10 arranged along the row direction X, and each column including at least two light-emitting devices 10 arranged along the column direction Y. And in two adjacent rows of light-emitting devices 10, two light-emitting devices 10 adjacent in the column direction Y are arranged in the same column. It should be noted that the row direction X intersects with the column direction Y, for example, the row direction X is approximately perpendicular to the column direction Y.

[0103] Below, some embodiments of the present disclosure are schematically illustrated by taking an example in which a plurality of light-emitting devices 10 are arranged in multiple rows and columns, and in two adjacent rows of light-emitting devices 10, two adjacent light-emitting devices 10 in the column direction Y are arranged in the same column. However, the embodiments of the present disclosure are not limited to this, and any other arrangement method can also be considered as long as the same technical concept is applied.

[0104] In some examples, referring to FIG. 4 , the backlight module 400 may further include multiple optical films 300. Light emitted by the light-emitting device 10 passes through the optical films 300 and then is emitted toward the display panel 200. Specifically, the display panel 200 is disposed on a side of the optical films 300 that is away from the light-emitting substrate 100. It should be noted that the optical films 300 perform color conversion and uniform light processing on the light emitted by the light-emitting device 10.

[0105] As shown in FIG4 , the light emitting device 10 can directly emit white light, which is then homogenized by the multiple optical films 300 and then emitted toward the display panel 200. Alternatively, the light emitting device 10 can also emit light of other colors (e.g., blue light), which is then color-converted and homogenized by the multiple optical films 300 and then emitted toward the display panel 200.

[0106] For example, referring to FIG. 4 , the plurality of optical films 300 include at least one of a scattering layer 310, a color conversion layer 320, a diffuser 330, and a composite film 340. The scattering layer 310, the color conversion layer 320, the diffuser 330, and the composite film 340 are sequentially disposed away from the display panel 200. For example, the diffuser 330 can be disposed on the light-emitting side of the light-emitting substrate 100, the composite film 340 on the side of the diffuser 330 away from the light-emitting substrate 100, and the scattering layer 310 and the color conversion layer 320 on the side of the diffuser 330 closer to the light-emitting substrate 100. In this case, the display panel 200 is disposed on the side of the composite film 340 away from the light-emitting substrate.

[0107] The scattering layer 310 blurs the light emitted by the light-emitting device 10 and provides support for the color conversion layer 320, the diffuser 330, and the composite film 340. The color conversion layer 320, when stimulated by light of a certain color emitted by the light-emitting device 10, converts that light into white light, thereby improving the utilization of the light energy of the light-emitting device 10. The diffuser 330 evens out the light passing through it. The composite film 340 improves the light extraction efficiency of the light-emitting substrate 100, thereby increasing the display brightness of the display device 1000.

[0108] It should be noted that the scattering layer 310 includes scattering particles, which include titanium dioxide and / or silicon dioxide. The composite film 340 may include a brightness enhancement film (BEF) and a reflective polarized brightness enhancement film (DBEF), which utilizes the principles of total reflection, refraction, and polarization to increase the light flux within a certain angle range, thereby improving the brightness of the display device 1000.

[0109] For example, as shown in FIG4 , the light-emitting device 10 emits blue light. The color conversion layer 320 may include a red quantum dot material, a green quantum dot material, and a transparent material. When the blue light emitted by the light-emitting device 10 passes through the red quantum dot material, it is converted into red light; when the blue light passes through the green quantum dot material, it is converted into green light; the blue light can directly pass through the transparent material; then, the blue light, red light, and green light are mixed and superimposed in a certain proportion to present white light. Finally, the scattering layer 310 and the diffuser 330 can evenly mix the white light to improve the light shadow produced by the light-emitting substrate 100 and enhance the display quality of the display device 1000.

[0110] In the related art, all optical films are disposed on the light-emitting side of the light-emitting substrate, which results in a large thickness of the entire display device and is not conducive to a lightweight and thin design of the display device.

[0111] Based on this, referring to FIG. 7 to FIG. 14 , some embodiments of the present disclosure provide a light-emitting substrate 100 , including a light-emitting device 10 , a substrate 20 , a scattering layer 310 and a color conversion layer 320 .

[0112] As shown in Figures 7 to 14 , the substrate 20 has a first surface 20A and a second surface 20B opposite to each other. A first groove 21 is formed on the first surface 20A of the substrate 20 .

[0113] It should be noted that the material of the substrate 20 may include a rigid material. For example, the material of the substrate 20 includes glass and / or polymethyl methacrylate (PMMA).

[0114] As shown in Figures 7 to 14 , the light-emitting device 10 is disposed on the first surface 20A of the substrate 20. The light-emitting device 10 includes a light-emitting region S. The orthographic projection of the light-emitting region S on the substrate 20 is located within the orthographic projection of the color conversion layer 320 on the substrate 20. It should be noted that the light-emitting region S refers to the region where the light-emitting device 10 emits light.

[0115] 7 to 14 , the color conversion layer 320 is disposed on the side of the light emitting device 10 facing the second surface 20B. The scattering layer 310 is disposed on the side of the color conversion layer 320 away from the light emitting device 10 .

[0116] On this basis, at least one of the light-emitting device 10, the color conversion layer 320, and the scattering layer 310 is located within the first groove 21. In this case, the components located within the first groove 21 and the substrate 20 jointly occupy a portion of the display device 1000's dimension in the thickness direction Z. That is, the components located within the first groove 21 do not need to occupy additional dimension of the display device 1000 in the thickness direction Z. Based on this, compared to related technologies, the display device 1000 provided in the embodiment of the present disclosure is thinner, and the reduced thickness is roughly the thickness of the components located within the first groove 21, making the display device 1000 even thinner and lighter.

[0117] It should be noted that the thickness direction Z is substantially perpendicular to the second surface 20B of the substrate 20 , the thickness direction Z is substantially perpendicular to the row direction X, and is substantially perpendicular to the column direction Y.

[0118] For example, as shown in Figures 7, 8, and 10, the light-emitting device 10 and the color conversion layer 320 are located in the first groove 21. In this case, the light-emitting device 10 and the color conversion layer 320 located in the first groove 21, together with the substrate 20, occupy part of the size of the display device 1000 in the thickness direction Z. That is, the light-emitting device 10 and the color conversion layer 320 do not need to occupy additional size of the display device 1000 in the thickness direction Z. In this way, the thickness of the display device 1000 is reduced, and the reduced thickness is roughly the sum of the thicknesses of the light-emitting device 10 and the color conversion layer 320.

[0119] For example, as shown in FIG9 , the light-emitting device 10, the color conversion layer 320, and the scattering layer 310 are all located within the first groove 21. In this case, the light-emitting device 10, the color conversion layer 320, and the scattering layer 310 located within the first groove 21, together with the substrate 20, occupy a portion of the dimension of the display device 1000 in the thickness direction Z. That is, the light-emitting device 10, the color conversion layer 320, and the scattering layer 310 do not need to occupy additional dimension of the display device 1000 in the thickness direction Z. In this way, the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the sum of the thicknesses of the light-emitting device 10, the color conversion layer 320, and the scattering layer 310.

[0120] For another example, as shown in Figures 11 and 12, the light-emitting device 10 is located in the first groove 21. In this case, the light-emitting device 10 and the substrate 20 located in the first groove 21 jointly occupy part of the size of the display device 1000 in the thickness direction Z. That is, the light-emitting device 10 does not need to occupy additional size of the display device 1000 in the thickness direction Z. In this way, the thickness of the display device 1000 is reduced, and the reduced thickness is roughly the thickness of the light-emitting device 10.

[0121] For another example, as shown in Figures 13 and 14, the color conversion layer 320 and the scattering layer 310 are located in the first groove 21. In this case, the color conversion layer 320 and the scattering layer 310 located in the first groove 21, together with the substrate 20, occupy a portion of the size of the display device 1000 in the thickness direction Z. That is, the color conversion layer 320 and the scattering layer 310 do not need to occupy additional size of the display device 1000 in the thickness direction Z. In this way, the thickness of the display device 1000 is reduced, and the reduced thickness is approximately the sum of the thicknesses of the color conversion layer 320 and the scattering layer 310.

[0122] When the color conversion layer 320 is disposed in the first groove 21, referring to Figures 7 to 10, 13 and 14, the above-mentioned light-emitting substrate 100 also includes a first encapsulation layer 450. The first encapsulation layer 450 is disposed on the side of the color conversion layer 320 away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 due to water and oxygen corrosion.

[0123] The coverage area of ​​the first encapsulation layer 450 can be varied according to actual needs. As shown in Figures 9 and 10 , the first encapsulation layer 450 is located within the first groove 21 , saving material. As shown in Figures 7 , 8 , 13 , and 14 , the first encapsulation layer 450 covers the entire substrate 20 and is partially located within the first groove 21 , which reduces the patterning process for the first encapsulation layer 450 and simplifies the process.

[0124] In some embodiments, referring to FIG. 7 , FIG. 11 and FIG. 12 , the light-emitting substrate 100 further includes a first circuit layer 40 . The first circuit layer 40 is disposed on the first surface 20A of the substrate 20 .

[0125] As shown in Figures 7, 11, and 12, the first circuit layer 40 includes a first solder pad 41 and a second solder pad 42. The light-emitting device 10, the first solder pad 41, and the second solder pad 42 are all disposed within the first groove 21. The light-emitting device 10 is connected to the first solder pad 41 and the second solder pad 42 to receive a light-emitting signal. In Figure 7, the anode and cathode of the light-emitting device 10 are located on the same side of the light-emitting device 10.

[0126] It should be noted that the first circuit layer 40 may be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0127] In some examples, referring to FIG. 7 , FIG. 15 and FIG. 16 , the first circuit layer 40 may further include a driving element 43 and a signal line 44 .

[0128] As shown in FIG. 15 and FIG. 16 , the signal line 44 may include a data line 441 , a gate line 442 , and a voltage signal line 443 .

[0129] On this basis, the driving element 43 is connected to the data line 441, the gate line 442 and the voltage signal line 443 to receive the electrical signal required to drive the light-emitting device 10 to emit light. In addition, the driving element 43 is connected to the light-emitting device 10 to generate and transmit the driving signal to drive the light-emitting device 10 to emit light.

[0130] The driving element 43 may include a micro integrated circuit chip or a driving circuit composed of a plurality of interconnected thin film transistors.

[0131] Exemplarily, referring to FIG. 15 and FIG. 16 , the driving element 43 includes a first transistor T1 , a second transistor T2 , and a first capacitor C1 .

[0132] As shown in Figures 15 and 16, a first electrode of the first transistor T1 is electrically connected to the voltage signal line 443, a second electrode of the first transistor T1 is electrically connected to the light-emitting device 10, and a control electrode of the first transistor T1 is electrically connected to the fifth node N5. A first electrode of the second transistor T2 is electrically connected to the data line 441, a second electrode of the second transistor T2 is electrically connected to the fifth node N5, and a control electrode of the second transistor T2 is electrically connected to the gate line 442. A first plate of the first capacitor C1 is electrically connected to the voltage signal line 443, and a second plate of the first capacitor C1 is electrically connected to the fifth node N5.

[0133] In this case, the driving element 43 may drive the corresponding light emitting device 10 to emit light or not emit light under the control of the signals received at the data line 441 and the gate line 442 .

[0134] In addition, one driving element 43 may drive one light emitting device 10 or multiple light emitting devices 10 .

[0135] Exemplarily, referring to FIG. 15 , FIG. 16 , FIG. 27 and FIG. 28 , the light-emitting substrate 100 includes a plurality of light-emitting units 110 , and each light-emitting unit 110 includes a plurality of light-emitting devices 10 connected in series and / or in parallel.

[0136] For example, as shown in FIG. 15 , the voltage signal line 443 includes a first voltage signal line 4431 and a second voltage signal line 4432 , and the voltage transmitted by the first voltage signal line 4431 is lower than the voltage transmitted by the second voltage signal line 4432 .

[0137] The driving element 43 is connected to the second voltage signal line 4432. Each light-emitting unit 110 includes two groups of light-emitting devices 10 connected in parallel, with each group including two light-emitting devices 10 connected in series. Of the two light-emitting devices 10 connected in series, the first electrode of the first light-emitting device 10 is electrically connected to the driving element 43, the second electrode of the first light-emitting device 10 is electrically connected to the first electrode of the second light-emitting device 10, and the second electrode of the second light-emitting device 10 is connected to the first voltage signal line 4431. In this case, one driving element 43 drives multiple light-emitting devices 10 in one light-emitting unit 110.

[0138] For another example, as shown in FIG16 , the voltage signal line 443 includes a first voltage signal line 4431, a second voltage signal line 4432, a third voltage signal line 4433, and a fourth voltage signal line 4434. Furthermore, the voltage transmitted by the first voltage signal line 4431 is lower than the voltage transmitted by the second voltage signal line 4432; the voltage transmitted by the second voltage signal line 4432 is lower than the voltage transmitted by the third voltage signal line 4433; and the voltage transmitted by the third voltage signal line 4433 is lower than the voltage transmitted by the fourth voltage signal line 4434.

[0139] Each light-emitting unit 110 includes four light-emitting devices 10, namely a first light-emitting device 11, a second light-emitting device 12, a third light-emitting device 13, and a fourth light-emitting device 14. A first electrode of the first light-emitting device 11 is electrically connected to a first node N1, and a second electrode of the first light-emitting device 11 is electrically connected to a second node N2. A first electrode of the second light-emitting device 12 is electrically connected to a second node N2, and a second electrode of the second light-emitting device 12 is electrically connected to a third node N3. A first electrode of the third light-emitting device 13 is electrically connected to a third node N3, and a second electrode of the third light-emitting device 13 is electrically connected to a fourth node N4. A first electrode of the fourth light-emitting device 14 is electrically connected to the first node N1, and a second electrode of the fourth light-emitting device 14 is electrically connected to a fourth node N4.

[0140] Furthermore, the first node N1, the second node N2, the third node N3 and the fourth node N4 are each connected to a driving element 43. At this time, one driving element 43 can drive one or more light emitting devices 10, and specifically can be controlled according to required brightness.

[0141] For example, referring to FIG16 , a driving element 43 connected to the first node N1 is a first driving element 431 , a driving element 43 connected to the second node N2 is a second driving element 432 , a driving element 43 connected to the third node N3 is a third driving element 433 , and a driving element 43 connected to the fourth node N4 is a fourth driving element 434 .

[0142] The first driving element 431 is electrically connected to the first voltage signal line 4431, the second driving element 432 is electrically connected to the second voltage signal line 4432, the third driving element 433 is electrically connected to the third voltage signal line 4433, and the fourth driving element 434 is electrically connected to the fourth voltage signal line 4434. Based on the above, the first driving element 431, the second driving element 432, the third driving element 433, and the fourth driving element 434 are electrically connected to the same gate line 442, and the first driving element 431, the second driving element 432, the third driving element 433, and the fourth driving element 434 are electrically connected to different data lines 441, respectively.

[0143] It should be noted that, referring to Figures 16 and 17 , the four data lines 441 connected to the first driver element 431, the second driver element 432, the third driver element 433, and the fourth driver element 434 can be connected to the same data bus 4410 via a multiplexing unit MUX to simplify the circuit. Furthermore, the multiplexing unit MUX is connected to a driver chip, which directly controls the opening and closing of the multiplexing unit MUX. The multiplexing unit MUX can, for example, include a third transistor T3, the control electrode of which is connected to the driver chip.

[0144] At this time, the first driving element 431 , the second driving element 432 , the third driving element 433 and the fourth driving element 434 may drive one, two or four light emitting devices 10 to emit light under the control of the signal received at the data line 441 .

[0145] When only one light-emitting device 10 is driven to emit light, the first transistor T1 and the second transistor T2 in any two adjacent driving elements 43, except the first driving element 431 and the fourth driving element 434, can be turned on, while the first transistor T1 in the other two driving elements 43 is turned off. For example, the first transistor T1 and the second transistor T2 in the first driving element 431 and the second driving element 432 can be turned on, while the first transistor T1 in the third driving element 433 and the fourth driving element 434 can be turned off. In this way, only the first light-emitting device 11 emits light.

[0146] When driving two light-emitting devices 10 to emit light, the first transistor T1 and the second transistor T2 in any two driver elements 43 can be turned on, while the first transistor T1 in the other two driver elements 43 can be turned off. For example, the first transistor T1 and the second transistor T2 in the first driver element 431 and the third driver element 433 can be turned on, while the first transistor T1 in the second driver element 432 and the fourth driver element 434 can be turned off. In this way, the first light-emitting device 11 and the second light-emitting device 12 emit light.

[0147] When driving the four light-emitting devices 10 to emit light, the first transistor T1 and the second transistor T2 in the first driving element 431 and the fourth driving element 434 can be turned on, and the first transistor T1 in the second driving element 432 and the third driving element 433 can be turned off. In this way, the first light-emitting device 11, the second light-emitting device 12, the third light-emitting device 13, and the fourth light-emitting device 14 emit light simultaneously.

[0148] It should be understood that the voltage difference between the voltage transmitted by the first voltage signal line 4431 and the voltage transmitted by the second voltage signal line 4432 is a first difference, the voltage difference between the voltage transmitted by the second voltage signal line 4432 and the voltage transmitted by the third voltage signal line 4433 is a second difference, and the voltage transmitted by the third voltage signal line 4433 and the voltage transmitted by the fourth voltage signal line 4434 is a third difference. The first difference, the second difference, and the third difference can be unequal. In this way, when driving one or two light-emitting devices 10 to emit light, different light-emitting devices 10 are turned on, and the corresponding light-emitting brightness is different, thereby achieving more grayscale control. The first transistor T1 and the second transistor T2 can only be switched between fully on and fully off, without the need for compensation design of the driving transistor (first transistor T).

[0149] In the case where the light emitting substrate 100 includes the first circuit layer 40 , referring to FIG. 7 , the light emitting substrate 100 may further include a first insulating layer 410 and a first reflective layer 420 .

[0150] As shown in FIG7 , the first insulating layer 410 is disposed on a side of the light-emitting device 10 away from the substrate 20 to provide insulation and protection for the light-emitting device 10. The first reflective layer 420 is disposed on a side of the first insulating layer 410 away from the substrate 20 to allow light from the light-emitting device 10 directed toward the first reflective layer 420 to be reflected and emitted from the second surface 20B of the substrate 20, thereby increasing light extraction efficiency.

[0151] The transmittance of the first insulating layer 410 is greater than or equal to 80%. For example, the material of the first insulating layer 410 may include a transparent resin.

[0152] The reflectivity of the first reflective layer 420 is greater than or equal to 85%. For example, the material of the first reflective layer 420 may include a metal, such as at least one of aluminum, silver, copper, and platinum. For example, the material of the first reflective layer 420 may also include white ink and / or silicone white glue.

[0153] In other embodiments, referring to Figures 8, 9 and 10, the light-emitting substrate 100 further includes a second circuit layer 50 and a third circuit layer 60, the second circuit layer 50 is arranged on the first surface 20A of the substrate 20, and the third circuit layer 60 is arranged on the side of the light-emitting device 10 away from the substrate 20.

[0154] For example, as shown in Figures 8, 9, and 10, the second circuit layer 50 includes a first solder pad 41, which is disposed within the first groove 21. The third circuit layer 60 includes a second solder pad 42, which is disposed on a side of the light-emitting device 10 away from the substrate 20. The light-emitting device 10 is located within the first groove 21 and is connected to the first solder pad 41 and the second solder pad 42 to receive a light emission signal. In Figures 8, 9, and 10, the anode and cathode of the light-emitting device 10 are located on opposite sides of the light-emitting device 10.

[0155] It should be noted that the second circuit layer 50 and the third circuit layer 60 may be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0156] In addition, the second circuit layer 50 may further include a driving element 43 and a signal line 44. The structures of the driving element 43 and the signal line 44, and the connection relationship between the driving element 43 and the signal line 44 may be specifically referred to above, and will not be elaborated herein in the embodiment of the present disclosure.

[0157] It should be understood that the third wiring layer 60 may include a whole metal conductive layer, and a portion of the metal conductive layer located on a side of the light emitting device 10 away from the substrate 20 forms the second pad 42 .

[0158] On this basis, the metal conductive layer not only provides voltage to the light-emitting device 10 but also acts as a reflector, so that light emitted from the light-emitting device 10 toward the metal conductive layer is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing light extraction efficiency. Exemplarily, the reflectivity of the metal conductive layer is greater than or equal to 85%. For example, the material of the metal conductive layer may include at least one of aluminum, silver, copper, and platinum.

[0159] It should be understood that in order to improve the light extraction efficiency of the light emitting substrate 100 , the material of the first pad 41 includes indium zinc oxide and / or indium tin oxide.

[0160] When the light-emitting substrate 100 includes the second circuit layer 50 and the third circuit layer 60, referring to Figures 8, 9, and 10, the light-emitting substrate 100 may further include a first insulating layer 410. The first insulating layer 410 is disposed between the second circuit layer 50 and the third circuit layer 60 to insulate the second circuit layer 50 from the third circuit layer 60. It should be noted that the material of the first insulating layer 410 can be referred to above and will not be described in detail in this embodiment of the present disclosure.

[0161] In some other embodiments, referring to FIG. 13 and FIG. 14 , the light-emitting substrate 100 further includes a fourth circuit layer 70 . The fourth circuit layer 70 is disposed on the first surface 20A of the substrate 20 .

[0162] For example, as shown in Figures 13 and 14, the fourth circuit layer 70 includes a first pad 41 and a second pad 42. The first pad 41 and the second pad 42 are disposed on opposite sides of the first groove 21. The light-emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21 to receive a light-emitting signal.

[0163] The orthographic projection of the light emitting area S of the light emitting device 10 on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the first groove 21 on the second surface 20B of the substrate 20 .

[0164] It should be noted that the fourth circuit layer 70 can be a single-layer structure or a multi-layer structure, which is not specifically limited in the embodiment of the present disclosure.

[0165] On this basis, referring to FIG. 13 , the light-emitting substrate 100 may further include a second reflective layer 430. The second reflective layer 430 is disposed on a side of the light-emitting device 10 away from the substrate 20 and at least covers the light-emitting device 10. This allows light emitted from the light-emitting device 10 toward the second reflective layer 430 to be reflected and emitted from the second surface 20B of the substrate 20, thereby increasing light extraction efficiency. For example, the second reflective layer 430 may cover the entire light-emitting substrate 100, resulting in a simple structure.

[0166] In addition, the second reflective layer 430 is a continuous whole layer structure, and the surface of the second reflective layer 430 away from the light emitting device 10 is substantially parallel to the second surface 20B, which can provide good protection for the light emitting device 10 and has a simple preparation process.

[0167] The reflectivity of the second reflective layer 430 is greater than or equal to 90%. For example, the material of the second reflective layer 430 may include a metal, such as at least one of aluminum, silver, copper, and platinum. For example, the material of the second reflective layer 430 may include at least one of white ink, silicone-based white glue, and white glaze.

[0168] It should be noted that, referring to Figures 7 to 12, when the light-emitting substrate 100 includes a first circuit layer 40, or when the light-emitting substrate 100 includes a second circuit layer 50 and a third circuit layer 60, the light-emitting substrate 100 may also include a second reflective layer 430, and the second reflective layer 430 is arranged on the side of the light-emitting device 10 away from the substrate 20.

[0169] In some embodiments, as shown in FIG. 7 and FIG. 8 , the first insulating layer 410 may be a film layer with uniform thickness. The first insulating layer 410 extends into the first groove 21 but does not fill the first groove 21 . The first insulating layer 410 only serves to provide packaging and insulation protection.

[0170] It should be noted that, when the light emitting substrate 100 includes the first circuit layer 40 , the first insulating layer 410 fills the space between the light emitting device 10 and the first circuit layer 40 .

[0171] At this time, as shown in Figures 7 and 8, the metal conductive layer or first reflective layer 420 included in the third circuit layer 60 extends into the first groove 21, surrounding the circumference of the light-emitting device 10. In this way, the metal conductive layer or first reflective layer 420 can also reflect most of the light emitted circumferentially from the light-emitting device 10 to the second surface 20B of the substrate 20, thereby improving the light extraction efficiency of the light-emitting substrate 100.

[0172] In other embodiments, referring to FIG. 9 and FIG. 10 , the first insulating layer 410 fills the first groove 21 . The first insulating layer 410 can play a role of packaging, insulation and protection, as well as a role of planarization.

[0173] 11 and 12 , the light emitting substrate 100 further includes a reflective structure 80 disposed on at least one side of the circumference of the light emitting device 10. For example, in the row direction X, the reflective structure 80 may be disposed on two opposite sides of the light emitting device 10.

[0174] The reflective structure 80 is configured to reflect the circumferential light emitted by the light emitting device 10 so that the circumferential light emitted by the light emitting device 10 is emitted toward the second surface 20B of the substrate 20 , thereby improving the light extraction efficiency of the light emitting substrate 100 .

[0175] In some embodiments, as shown in Figures 11 and 18, the reflective structure 80 includes a second groove 81 and a plurality of reflective balls 82. The second groove 81 is provided on the first surface 20A of the substrate 20. The reflective balls 82 are provided in the second groove 81. Here, the plurality of reflective balls 82 can be stacked to fill the second groove 81 to increase the reflectivity.

[0176] The cross-section of the second groove 81 is roughly an isosceles triangle, and the cross-section is roughly perpendicular to the boundary between the second groove 81 and the first groove 21. This shape facilitates direct formation through an etching process, and while meeting reflectivity requirements, the reflective structure 80 requires less space, making it easier to install. In addition, the vertex angle of the isosceles triangle is between 45° and 55°. For example, the vertex angle of the isosceles triangle is any one of 45°, 46°, 48°, 50°, 51°, 53°, and 55°, so that light from the side of the light-emitting device 10 is instead emitted obliquely downward, creating a good reflection effect.

[0177] The maximum depth of the second groove 81 in the first direction (i.e., the thickness direction Z mentioned above) is greater than or equal to the thickness of the light-emitting device 10 in the first direction. The first direction is substantially perpendicular to the second surface 20B. For example, the maximum depth of the second groove 81 in the first direction may be the same as the maximum depth of the first groove 21 in the first direction. In this case, the light emitted from the side of the light-emitting device 10 is reflected by the reflective structure 80 (reflective ball 82), which is beneficial to improving the light extraction efficiency of the light-emitting substrate 100.

[0178] The reflective spheres 82 are made of a photonic crystal. For example, the reflective spheres 82 include silicon nanospheres having a dielectric constant of 12.5 and a radius of 45 nm to 55 nm. For example, the radius of the silicon nanospheres is any one of 45 nm, 46 nm, 47 nm, 49 nm, and 50 nm.

[0179] It should be noted that the radii of all the reflective balls 82 may be the same, or may be partially the same and partially different, and this disclosure does not impose any specific limitation on this.

[0180] Reflective spheres 82 are silicon nanospheres with a radius of 50 nm. The maximum depth of the second groove 81 in the first direction and the maximum depth of the first groove 21 in the first direction are both 150 μm to 200 μm. The three sides of the isosceles triangle are 200 μm to 220 μm, 200 μm to 220 μm, and 175 μm to 195 μm, respectively. The vertex angle of the isosceles triangle is 50°. An optical simulation of the reflective structure 80 was performed using electromagnetic simulation software. The simulation results are shown in Figure 20. As shown in Figure 20, the reflective structure 80 has a photon bandgap between 400 nm and 455 nm, meaning it blocks photons with wavelengths between 400 nm and 455 nm. The reflectivity of the reflective structure 80 for light with a wavelength between 400 nm and 455 nm is greater than or equal to 99%.

[0181] Based on this, the light-emitting device 10 can choose to emit blue light, and the wavelength of the blue light is between 400nm and 460nm. In this way, the direction of most of the lateral light emitted by the light-emitting device 10 can be reflected from horizontal emission to oblique downward emission, so that the lateral light emitted by the light-emitting device 10 can also be emitted from the second surface 20B of the substrate 20, thereby effectively improving the light extraction efficiency of the light-emitting substrate 100.

[0182] In other embodiments, as shown in Figures 12 and 19, the reflective structure 80 includes a plurality of dielectric holes 83 and a plurality of reflective pillars 84. The plurality of dielectric holes 83 are arranged in an array on the first surface 20A of the substrate 20, with one reflective pillar 84 disposed within one dielectric hole 83. The plurality of dielectric holes 83 can be arranged in multiple rows and columns along the row direction X and the column direction Y, with each row including at least two dielectric holes 83, and each column including at least two dielectric holes 83. Furthermore, in two adjacent rows of dielectric holes 83, two adjacent dielectric holes 83 in the column direction Y are arranged in the same column.

[0183] It should be noted that the row direction X and the column direction Y are the directions in which the light emitting devices 10 are arranged in an array. In addition, the dielectric holes 83 can be blind holes that do not penetrate the substrate 20 or through holes that penetrate the substrate 20 .

[0184] The angle between the central axis of the dielectric hole 83 and the first direction (i.e., the thickness direction Z) is 20° to 35°. For example, the angle between the central axis of the dielectric hole 83 and the first direction (i.e., the thickness direction Z) is any one of 20°, 21°, 24°, 25°, 26°, 28°, 30°, 32°, 34° and 35°, so that the lateral light of the light-emitting device 10 is changed to be emitted obliquely downward, forming a good reflection effect.

[0185] The maximum depth of the dielectric hole 83 in the first direction is greater than or equal to the thickness of the light-emitting device 10 in the first direction. Exemplarily, the dielectric hole 83 is a through hole extending through the substrate 20. In this case, all lateral light emitted from the light-emitting device 10 is reflected by the reflective structure 80 (reflective column 84), which helps improve the light extraction efficiency of the light-emitting substrate 100.

[0186] The radius of the dielectric hole 83 is larger than the radius of the reflective column 84 to facilitate alignment of the reflective column 84 within the dielectric hole 83. Exemplarily, the radius of the dielectric hole 83 is 45 nm to 55 nm. For example, the radius of the dielectric hole 83 is any one of 45 nm, 46 nm, 47 nm, 48 nm, 49 nm, 50 nm, 51 nm, 52 nm, 53 nm, 54 nm, and 55 nm.

[0187] The material of the reflective pillar 84 includes a photonic crystal. For example, the reflective pillar 84 comprises a silicon dielectric pillar having a dielectric constant of 12.5 and a radius of 20 nm to 40 nm. For example, the radius of the silicon dielectric pillar is any one of 20 nm, 22 nm, 24 nm, 25 nm, 27 nm, 28 nm, 30 nm, 31 nm, 33 nm, 35 nm, 38 nm, and 40 nm.

[0188] In one feasible embodiment, all reflective pillars 84 have the same radius. In another feasible embodiment, the plurality of reflective pillars 84 include a plurality of first reflective pillars 841 and a plurality of second reflective pillars 842. The plurality of first reflective pillars 841 have the same radius, the plurality of second reflective pillars 842 have the same radius, and the radius of the first reflective pillars 841 is greater than the radius of the second reflective pillars 842. For example, the radius of the first reflective pillars 841 is 30 nm, and the radius of the second reflective pillars 842 is 25 nm. Based on this, the first reflective pillars 841 are arranged in multiple rows, and the second reflective pillars 842 are arranged in multiple rows, and the multiple rows of first reflective pillars 841 and the multiple rows of second reflective pillars 842 are arranged alternately in the column direction Y.

[0189] With reflective pillars 84 constructed of silicon dielectric pillars with a radius of 30 nm and a central axis of dielectric hole 83 at an angle of 30° to the first direction, optical simulation of reflective structure 80 was performed using electromagnetic simulation software. The simulation results are shown in Figure 21. As shown in Figure 21, reflective structure 80 has a photon bandgap between 400 nm and 455 nm, meaning it blocks photons with wavelengths between 400 nm and 450 nm. The reflective structure 80 has a reflectivity greater than or equal to 99% for light with a wavelength between 400 nm and 455 nm.

[0190] Based on this, the light-emitting device 10 can choose to emit blue light, and the wavelength of the blue light is between 400nm and 460nm. In this way, the direction of most of the lateral light emitted by the light-emitting device 10 can be reflected from horizontal emission to oblique downward emission, so that the lateral light emitted by the light-emitting device 10 can also be emitted from the second surface 20B of the substrate 20, thereby effectively improving the light extraction efficiency of the light-emitting substrate 100.

[0191] In some embodiments, referring to FIG. 13 and FIG. 14 , the light-emitting substrate 100 further includes a dimming structure 90 . The dimming structure 90 is disposed on the second surface 20B of the substrate 20 .

[0192] The dimming structure 90 is configured to adjust the amount of light emitted from the first region M1 and the second region M2 to balance the amount of light emitted from the first region M1 and the second region M2, thereby reducing the difference in the amount of light emitted from the first region M1 and the second region M2, thereby achieving the purpose of improving the brightness uniformity of the light-emitting substrate 100. The first region M1 is the area of ​​the substrate 20 where the first groove 21 is located, and the second region M2 is the area of ​​the substrate 20 excluding the first groove 21.

[0193] In some embodiments, as shown in Figures 13 and 22, the dimming structure 90 includes a first grating 91 disposed on the second surface 20B of the substrate 20. The duty cycle of the first grating 91 in the first region M1 is smaller than the duty cycle of the first grating 91 in the second region M2. This arrangement makes the light-emitting area of ​​the second region M2 larger than that of the first region M1, thereby reducing the difference in light output between the first region M1 and the second region M2, thereby improving the brightness uniformity of the light-emitting substrate 100.

[0194] It should be noted that the first grating 91 includes a plurality of slits 910 arranged at intervals, and the duty cycle refers to the ratio of the area of ​​the slits 910 to the area of ​​the first grating 91 .

[0195] The refractive index of the first grating 91 is greater than that of the substrate 20. Exemplarily, the material of the first grating 91 includes a glue material having a refractive index greater than 1.85. For example, the material of the first grating 91 includes at least one of an embossing glue, an epoxy resin glue, silicon nitride, and silicon oxide.

[0196] In some examples, referring to FIG. 13 and FIG. 22 , in the first region M1 , the widths of the slits 910 of the first grating 91 may be substantially equal, for example, to facilitate manufacturing.

[0197] In some examples, referring to FIG. 22 , two adjacent first grooves 21 are symmetrical with respect to the first axis L1 in the second direction, and the second direction is substantially perpendicular to the extension direction of the slits 910 of the first grating 91. In the second region M2, the width of the slits 910 of the first grating 91 gradually increases from the first grooves 21 toward the first axis L1. In this case, the difference in light output in the second direction of the second region M2 is reduced, and the brightness uniformity of the second region M2 is improved, thereby further enhancing the brightness uniformity of the light-emitting substrate 100.

[0198] It should be noted that the extending direction of the slits 910 of the first grating 91 is, for example, substantially parallel to the column direction Y. In this case, the second direction may be, for example, the row direction X.

[0199] It should be understood that the first grating 91 may include any one of a rectangular grating, a tilted grating, a blazed grating, and a two-dimensional grating.

[0200] FIG23 illustrates the structure of a rectangular grating according to some embodiments. As shown in FIG23 , the rectangular grating comprises a plurality of spaced-apart, strip-shaped protrusions, each having a roughly quadrilateral cross-section and oriented substantially perpendicular to the substrate 20 (see FIG13 ). The first grating 91 is a rectangular grating. When a light beam enters the incoupling region, it is divided into diffraction orders at different angles. By adjusting the period, depth, and duty cycle of the rectangular grating, the diffracted light beam in a particular direction can achieve the highest diffraction efficiency, achieving both directional light beam transmission and improved imaging quality.

[0201] Figure 24 illustrates the structure of a tilted grating according to some embodiments. As shown in Figure 24 , the tilted grating comprises a plurality of spaced, strip-shaped protrusions, each having a roughly quadrilateral cross-section and non-perpendicular to the substrate 20 (see Figure 13 ). The first grating 91 utilizes a tilted grating. The tilt angle modulates the wavelength bandwidth and angular bandwidth of the incident light, mitigating chromatic aberration caused by optical path differences between light beams of different wavelengths during transmission.

[0202] Figure 25 illustrates the structure of a blazed grating according to some embodiments. As shown in Figure 25 , the blazed grating comprises a plurality of spaced-apart, strip-shaped protrusions, each having a roughly triangular cross-section, which can be, for example, a roughly right-angled triangle. One of the right-angled sides of the protrusion is connected to the substrate 20 (see Figure 13 ). The first grating 91 is a blazed grating, and the position of the central maximum of the single-slit diffraction can be shifted from the zeroth order spectrum, which does not exhibit dispersion, to other spectral orders with dispersion.

[0203] Figure 26 illustrates the structure of a two-dimensional grating according to some embodiments. As shown in Figure 26, the two-dimensional grating comprises a plurality of block-shaped protrusions arranged in an array. The first grating 91 employs a two-dimensional grating, which enables light beam outcoupling and multi-directional expansion, resulting in higher diffraction efficiency and a wider light output surface.

[0204] Based on the above, the first grating 91 can be selected from any one of rectangular grating, tilted grating, blazed grating and two-dimensional grating according to actual needs, and the embodiment of the present disclosure does not make any specific limitation on this.

[0205] In other embodiments, as shown in FIG14 , the dimming structure 90 includes a light guide plate 92 and a plurality of mesh dots 93. The light guide plate 92 is disposed on the second surface 20B of the substrate 20, and a plurality of third grooves 921 are defined on a side of the light guide plate 92 away from the substrate 20. The mesh dots 93 are located within the third grooves 921.

[0206] The light guide plate 92 is made of a transparent resin. For example, the light guide plate 92 is made of polymethyl methacrylate and / or polyoxymethylene.

[0207] The material of the mesh dots 93 includes at least one of a transparent resin, a white resin, and a resin mixed with other optical particles. For example, the mesh dots 93 include polymethyl methacrylate fused with titanium dioxide particles.

[0208] It should be noted that there is a refractive index difference between the material of the light guide plate 92 and the effective refractive material (such as titanium dioxide particles) in the material of the dots 93, which can destroy the total reflection of light in the light guide plate 92, thereby causing the light to be emitted from the surface of the light guide plate 92 close to the dots 93.

[0209] When light hits the mesh dots 93, the mesh dots 93 scatter the incident light, and the light is reflected in all directions. The scattered light is emitted from the side of the dimming structure 90 away from the substrate 20, thereby improving the brightness uniformity of the first area M1 and the second area M2, thereby improving the brightness uniformity of the light-emitting substrate 100.

[0210] It should be noted that the density of the dots 93 refers to the ratio of the area of ​​the dots 93 to the area of ​​the surface of the light guide plate 92 close to the substrate 20 .

[0211] A dot 93 may be provided in a third groove 921 to control the density of the dot 93 , thereby adjusting the light output from the first region M1 and the second region M2 to reduce the difference in light output from the first region M1 and the second region M2 .

[0212] In some examples, referring to FIG. 14 , the density of dots 93 in the first region M1 is lower than the density of dots 93 in the second region M2. This arrangement allows light to be emitted from the surface of the light guide plate 92 near the dots 93 due to the difference in refractive index between the light guide plate 92 and the dots 93. Therefore, the density of dots 93 in the first region M1 is lower than the density of dots 93 in the second region M2.

[0213] That is, the light emitting area of ​​the first region M1 is smaller than that of the second region M2 , which can reduce the difference in light emitting amount between the first region M1 and the second region M2 , thereby achieving the purpose of improving the brightness uniformity of the light emitting substrate 100 .

[0214] In some examples, referring to FIG. 14 , two adjacent first grooves 21 are symmetrical about the second axis L2. In the second region M2, the density of the mesh dots 93 gradually increases from the first grooves 21 toward the second axis L2. This arrangement, due to the difference in refractive index between the light guide plate 92 and the mesh dots 93, allows light to be emitted from the surface of the light guide plate 92 closest to the mesh dots 93. Therefore, in the second region M2, the density of the mesh dots 93 gradually increases from the first grooves 21 toward the second axis L2.

[0215] That is, in the second region M2 , the light emitting area of ​​the region farther from the first groove 21 is larger than the light emitting area of ​​the region closer to the first groove 21 , which can improve the brightness uniformity of the second region M2 , thereby further improving the brightness uniformity of the light emitting substrate 100 .

[0216] In some embodiments, referring to FIG. 7 and FIG. 8 , the light emitting substrate 100 further includes a second grating 440 . The second grating 440 is disposed in the first groove 21 and located between the color conversion layer 320 and the scattering layer 310 .

[0217] At this time, the color conversion layer 320 is located in the first groove 21, and the scattering layer 310 can be located in the first groove 21 or on the side of the second surface 20B of the second substrate 20. The following uses the case where the color conversion layer 320 is located in the first groove 21 as an example to schematically illustrate some embodiments of the present disclosure, but the embodiments of the present disclosure are not limited thereto.

[0218] The second grating 440 is configured to transmit light whose polarization direction is substantially parallel to the third direction, and the third direction is substantially parallel to the second surface 20B.

[0219] On this basis, the second grating 440 located in the first groove 21 and the substrate 20 jointly occupy part of the size of the display device 1000 in the thickness direction Z. That is, the second grating 440 located in the first groove 21 does not need to occupy additional size of the display device 1000 in the thickness direction Z. At the same time, the second grating 440 can function as a polarizer, eliminating a layer of polarizer in the display panel 200, thereby reducing the thickness of the display panel 200 and the thickness of the display device 1000, making the display device 1000 even thinner and lighter.

[0220] 3 , the display panel 200 includes an array substrate 210, an alignment substrate 220, a liquid crystal layer 230, and a first polarizer 240. The liquid crystal layer 230 is disposed between the array substrate 210 and the alignment substrate 220, and the first polarizer 240 is disposed on a side of the liquid crystal layer 230 away from the light-emitting substrate 100. For example, the first polarizer 240 is disposed between the liquid crystal layer 230 and the alignment substrate 220.

[0221] The transmission axis of the first polarizer 240 is substantially perpendicular or parallel to the polarization direction of the light selectively transmitted by the second grating 440. That is, the transmission axis of the first polarizer 240 is substantially perpendicular or parallel to the third direction.

[0222] It should be noted that the transmission axis of the first polarizer 240 is substantially perpendicular or substantially parallel to the third direction, and can be specifically designed according to different display modes, which is not specifically limited in the embodiment of the present disclosure.

[0223] In some embodiments, referring to FIG. 10 , the sidewall of at least one side of the first groove 21 has a step structure 211 (see FIG. 40 ) to avoid the risk of film or trace breakage caused by excessive slope of the sidewall of the first groove 21 .

[0224] Exemplarily, as shown in FIG10 , the light-emitting substrate 100 includes a second circuit layer 50 and a third circuit layer 60 , and the first groove 21 includes four side walls connected to each other. A step is formed on one side wall of the first groove 21 in the row direction X, and there is a slope on both the upper and lower sides of the step. The signal line 44 can pass through the two slopes in sequence and be connected to the first pad 41 in the first groove 21, thereby reducing the risk of the signal line 44 breaking.

[0225] 27 and 28 , the orthographic projections of the light-emitting areas S of at least two light-emitting devices 10 on the second surface 20B of the substrate 20 are located within the range of the orthographic projection of the same first groove 21 on the second surface 20B of the substrate 20 to reduce process difficulty.

[0226] For example, referring to Figures 5, 6 and 27, a plurality of light-emitting devices 10 are arranged in an array, and the light-emitting areas S (see Figure 7) of at least two light-emitting devices 10 located in the same row and / or the same column are projected on the second surface 20B of the substrate 20 within the range of the projected area of ​​the same first groove 21 on the second surface 20B of the substrate 20, so as to reduce the difficulty of the process.

[0227] 27 , the light emitting areas S (see FIG. 7 ) of eight light emitting devices 10 in the same row are orthographically projected onto the second surface 20B of the substrate 20 , wherein the eight light emitting devices 10 may belong to the same light emitting unit 110 .

[0228] Furthermore, as shown in FIG27 , the orthographic projections of the light-emitting areas S (see FIG7 ) of the plurality of light-emitting devices 10 in the same light-emitting unit 110 on the second surface 20B of the substrate 20 are located within the orthographic projection of the same first groove 21 on the second surface 20B of the substrate 20. Thus, by dividing and preparing the first grooves 21 according to the light-emitting units 110, the preparation process of the first grooves 21 can be simplified, circuit routing design can be facilitated, and brightness uniformity of the light-emitting substrate 100 can be improved.

[0229] Of course, as shown in FIG28 , the orthographic projections of the light-emitting areas S (see FIG7 ) of the multiple light-emitting devices 10 in the same light-emitting unit 110 on the second surface 20B of the substrate 20 may also be located within the orthographic projections of the two first grooves 21 on the second surface 20B of the substrate 20. For example, the multiple light-emitting devices 10 in the same light-emitting unit 110 are arranged in multiple rows and columns, and the light-emitting areas S of the light-emitting devices 10 in the same row in the same light-emitting unit 110 are located within the orthographic projection of one first groove 21 on the second surface 20B of the substrate 20, thereby simplifying the routing design of the signal line 44.

[0230] In some embodiments, referring to Figures 9 and 14, the above-mentioned light-emitting substrate 100 further includes a third reflective layer 460, which covers the first surface 20A of the substrate 20 and exposes at least a portion of the first groove 21, so that the light emitted by the light-emitting device 10 toward the third reflective layer 460 is reflected and emitted from the second surface 20B of the substrate 20, thereby increasing the light extraction efficiency.

[0231] Exemplarily, as shown in FIG. 9 , the third reflective layer 460 covers the first surface 20A of the substrate 20 and partially extends to the upper side of the first groove 21 , exposing a portion of the first groove 21 .

[0232] Exemplarily, as shown in FIG. 14 , the third reflective layer 460 covers the first surface 20A of the substrate 20 and completely exposes the first groove 21 .

[0233] The reflectivity of the third reflective layer 460 is greater than or equal to 90%. Exemplarily, the material of the third reflective layer 460 includes white ink and / or silicone white glue.

[0234] At this time, in the case that the light emitting substrate 100 includes the reflective balls 82 or the reflective columns 84 , the third reflective layer 460 can play a role in covering and fixing the reflective balls 82 or the reflective columns 84 .

[0235] On this basis, as shown in FIG9 , the light emitting substrate 100 further includes a plurality of reflective prisms 470 , which are disposed between the third reflective layer 460 and the substrate 20 to increase the reflectivity of the surface of the third reflective layer 460 close to the substrate 20 .

[0236] It should be noted that the plurality of reflective prisms 470 may be arranged in an array between the third reflective layer 460 and the substrate 20 , which is not specifically limited in the embodiment of the present disclosure.

[0237] Some embodiments of the present disclosure further provide a method for preparing a light-emitting substrate 100 , which is used to prepare the light-emitting substrate 100 of any of the above embodiments. As shown in FIG. 29 , the preparation method includes S100 to S200 .

[0238] S100 : forming a first groove 21 on a substrate 20 .

[0239] In the above steps, as shown in Figures 39, 40 and 41, the substrate 20 has a first surface 20A and a second surface 20B opposite to each other. The first surface 20A of the substrate 20 is provided with a first groove 21.

[0240] In some examples, referring to Figures 39 and 40, the first groove 21 can be formed by etching the substrate 20 using a single mask. In one feasible embodiment, a separate mask can be provided and removed after etching the substrate 20 to form the first groove 21. The mask can be made of amorphous silicon. In another feasible embodiment, referring to Figure 41, the mask can also be the third reflective layer 460 mentioned above. That is, before S100, referring to Figure 30, the preparation method also includes S90.

[0241] S90 : forming a third reflective layer 460 on the substrate 20 .

[0242] In the above steps, as shown in FIG41 , the third reflective layer 460 covers the first surface 20A of the substrate 20 and exposes the first groove 21. The third reflective layer 460 can be formed by at least one of a coating process, a photolithography process, a deposition process, and a sputtering process, which is not specifically limited in the present embodiment.

[0243] It should be noted that before forming the third reflective layer 460 , a plurality of reflective prisms 470 may be formed by an embossing technique, which is not specifically limited in the embodiment of the present disclosure.

[0244] In other examples, referring to FIG. 31 , S100 includes S110 to S120 .

[0245] S110 : etching the substrate 20 to form a first initial groove 21 ′.

[0246] In the above steps, as shown in Figure 40, a mask plate can be used to perform a single etching process on the substrate 20 to form the first initial groove 21'. The material of the mask plate can include amorphous silicon.

[0247] S120 : etching the sidewall of at least one side of the first preliminary groove 21 ′, so that a step structure 211 is formed on the sidewall of at least one side of the first preliminary groove 21 ′.

[0248] 40 , another mask plate may be used to perform another etching process on the substrate 20 to form a first groove 21 having a step structure 211 on at least one side of the sidewall. The material of the mask plate may include amorphous silicon.

[0249] S200 : forming a scattering layer 310 , a color conversion layer 320 and a light emitting device 10 .

[0250] In the above steps, as shown in Figures 39 to 45 , the color conversion layer 320 is disposed on the side of the light-emitting device 10 facing the second surface 20B. The light-emitting device 10 includes a light-emitting area S, and the orthographic projection of the light-emitting area S of the light-emitting device 10 on the substrate 20 is located within the orthographic projection of the color conversion layer 320 on the substrate 20. The scattering layer 310 is disposed on the side of the color conversion layer 320 away from the light-emitting device 10. The orthographic projection of the light-emitting area S of the light-emitting device 10 on the substrate 20 is located within the orthographic projection of the scattering layer 310 on the substrate 20. At least one of the light-emitting device 10, the color conversion layer 320, and the scattering layer 310 is located within the first recess 21.

[0251] The beneficial effects of the method for preparing the light-emitting substrate 100 provided by some embodiments of the present disclosure are the same as the beneficial effects of the light-emitting substrate 100 provided by the above embodiments, and are not described in detail herein.

[0252] In some embodiments, referring to FIG. 32 , the above-mentioned S200 includes S211 to S214 .

[0253] S211 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0254] In the above steps, as shown in FIG41 , the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0255] S212 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0256] In the above steps, as shown in FIG41 , a first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 due to water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the present embodiment.

[0257] S213 : forming a first circuit layer 40 on a side of the first packaging layer 450 away from the substrate 20 .

[0258] In the above steps, as shown in FIG39 , the first circuit layer 40 includes a first pad 41 and a second pad 42 . The first pad 41 and the second pad 42 are disposed in the first groove 21 .

[0259] It should be noted that the first circuit layer 40 may further include a signal line 44. The first pad 41, the second pad 42 and the signal line 44 included in the first circuit layer 40 may be formed by electroplating and / or magnetron sputtering, which is not specifically limited in the present embodiment.

[0260] S214 : forming a light emitting device 10 in the first groove 21 .

[0261] 39 , the light emitting device 10 is connected to the first pad 41 and the second pad 42. For example, the light emitting device 10 and the first pad 41 and the second pad 42 may be connected by a welding process.

[0262] In other embodiments, referring to FIG. 33 , S200 includes S221 to S225 .

[0263] S221 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0264] In the above steps, as shown in FIG41 , the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0265] S222 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0266] In the above steps, as shown in FIG41 , a first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 due to water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the present embodiment.

[0267] S223 : forming a second circuit layer 50 on a side of the first packaging layer 450 away from the substrate 20 .

[0268] In the above steps, as shown in FIG41 , the second circuit layer 50 includes a first pad 41 . The first pad 41 is disposed in the first groove 21 .

[0269] It should be noted that the second circuit layer 50 may further include a signal line 44. The first pad 41 and the signal line 44 included in the second circuit layer 50 may be formed by electroplating and / or magnetron sputtering, which is not specifically limited in the present embodiment.

[0270] S224 : forming a light emitting device 10 in the first groove 21 .

[0271] In the above steps, as shown in Fig. 41, the light emitting device 10 is connected to the first pad 41. Exemplarily, the light emitting device 10 and the first pad 41 can be connected by a welding process.

[0272] S225 : forming a third circuit layer 60 on a side of the light emitting device 10 away from the substrate 20 .

[0273] 41 , the third circuit layer 60 includes a second pad 42, and the light emitting device 10 is further connected to the second pad 42. For example, the light emitting device 10 and the second pad 42 may be connected by welding.

[0274] It should be noted that the third circuit layer 60 includes a conductive layer, which can be a continuous whole layer structure. The second pad 42 can be the part of the conductive layer located directly above the light-emitting device 10. The conductive layer can be formed by an electroplating process and / or a magnetron sputtering process. The embodiments of the present disclosure do not make specific limitations on this.

[0275] In some other embodiments, referring to FIG. 34 , the above-mentioned S200 further includes S231 to S234 .

[0276] S231 : forming a scattering layer 310 and a color conversion layer 320 in sequence in the first groove 21 .

[0277] In the above steps, as shown in FIG42 , the scattering layer 310 and the color conversion layer 320 may be sequentially formed in the first groove 21 by using an inkjet printing process.

[0278] S232 : forming a first encapsulation layer 450 on a side of the color conversion layer 320 away from the substrate 20 .

[0279] In the above steps, as shown in FIG42 , a first encapsulation layer 450 is disposed on the side of the color conversion layer away from the substrate 20 to protect the color conversion layer 320, thereby reducing the risk of failure of the color conversion layer 320 due to water and oxygen corrosion. The first encapsulation layer 450 can be formed by a deposition process and / or an inkjet printing process, which is not specifically limited in the present embodiment.

[0280] S233 : forming a fourth circuit layer 70 on a side of the first packaging layer 450 away from the substrate 20 .

[0281] In the above steps, as shown in FIG42 , the fourth circuit layer 70 includes a first pad 41 and a second pad 42 . The first pad 41 and the second pad 42 are disposed on opposite sides of the first groove 21 .

[0282] It should be noted that the fourth circuit layer 70 may further include a signal line 44. The first pad 41, the second pad 42 and the signal line 44 included in the fourth circuit layer 70 may be formed by electroplating and / or magnetron sputtering, which is not specifically limited in the present embodiment.

[0283] S234 : forming a light emitting device 10 on a side of the fourth circuit layer 70 away from the substrate 20 .

[0284] 42 , the light emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21. For example, the light emitting device 10 is connected to the first pad 41 and the second pad 42 outside the first groove 21 by welding.

[0285] The orthographic projection of the light emitting area S of the light emitting device 10 on the second surface 20B of the substrate 20 is located within the range of the orthographic projection of the first groove 21 on the second surface 20B of the substrate 20 .

[0286] 32 and 33 , when S200 includes S211 to S214 or S221 to S225 , the above S200 also includes S230 .

[0287] S230 : forming a first insulating layer 410 .

[0288] In the above steps, as shown in FIG39 , when S200 includes S211 to S214, the first insulating layer 410 is disposed on a side of the light-emitting device 10 away from the substrate 20. As shown in FIG40 and FIG41 , when S200 includes S221 to S225, the first insulating layer 410 is disposed between the second circuit layer 50 and the third circuit layer 60.

[0289] It should be noted that the first insulating layer 410 may be formed by a deposition process and / or a coating process, which is not specifically limited in the embodiments of the present disclosure.

[0290] When the first insulating layer 410 fills the first groove 21 , in some examples, as shown in FIG. 35 , after S100 , the above preparation method may further include S310 to S320 .

[0291] S310 : forming a second groove 81 .

[0292] In the above steps, as shown in FIG44 , the second groove 81 is provided on the first surface 20A of the substrate 20 and is located on at least one side of the circumference of the first groove 21. In one feasible embodiment, a separate mask plate can be provided and used as a mask to etch the substrate 20 to form the second groove 81, and then the mask plate is removed. The material of the mask plate can include amorphous silicon.

[0293] S320 : Filling the second groove 81 with reflective balls 82 .

[0294] In the above steps, as shown in FIG. 44 , a plurality of reflective balls 82 may be stacked to fill the second groove 81 , forming a tight stack.

[0295] In the case where the first insulating layer 410 fills the first groove 21 , in other examples, as shown in FIG. 36 , after S100 , the above preparation method may further include S410 to S420 .

[0296] S410 : forming a plurality of dielectric holes 83 .

[0297] In the above steps, as shown in FIG45 , a plurality of dielectric holes 83 are provided on the first surface 20A of the substrate 20 and are located on at least one side of the circumference of the first groove 21. The plurality of dielectric holes 83 can be formed by ablating the substrate 20 using femtosecond laser technology, thereby forming a plurality of inclined dielectric holes 83 arranged in an array.

[0298] S420 : Filling the dielectric hole 83 with a reflective column 84 .

[0299] In the above steps, as shown in FIG45 , a reflective column 84 is disposed in a dielectric hole 83. Specifically, S420 may be performed by using a mechanical alignment process to place the reflective column 84 in the dielectric hole 83.

[0300] In some embodiments, the method for preparing the light-emitting substrate 100 further includes: forming a first grating 91 on the second surface 20B of the substrate 20 .

[0301] 13 and 42 , the duty cycle of the first grating 91 in the first region M1 is smaller than the duty cycle of the first grating 91 in the second region M2. The first region M1 is the region of the substrate 20 where the first groove 21 is located, and the second region M2 is the region of the substrate 20 excluding the first groove 21.

[0302] It should be noted that the first grating 91 may be provided before S100 or after S200 , and this embodiment of the present disclosure does not specifically limit this.

[0303] In some examples, referring to FIG. 37 , forming the first grating 91 on the second surface 20B of the substrate 20 specifically includes S510 - S520 .

[0304] S510 : thinning the substrate 20 and forming an initial target thin film on the second surface 20B of the substrate 20 .

[0305] In the above steps, referring to FIG42 , the initial target thin film can be formed by a deposition process and / or a coating process, wherein the refractive index of the material of the initial target thin film is greater than the refractive index of the substrate 20 .

[0306] S520 : patterning the initial target film to form a first grating 91 .

[0307] In the above steps, referring to FIG. 42 , the initial target film may be patterned using photolithography and / or nanoimprinting processes to form the first grating 91 .

[0308] In some other embodiments, referring to FIG. 38 , the method for preparing the light-emitting substrate 100 further includes S610 to S620 .

[0309] S610 : forming a light guide plate 92 on the second surface 20B of the substrate 20 .

[0310] In the above steps, as shown in Figure 43, a plurality of third grooves 921 are provided on the side of the light guide plate 92 away from the substrate 20. The light guide plate 92 can be formed by injection molding, hot pressing, 3D printing, laser dotting, and other processes.

[0311] S620 : forming dots 93 in the third groove 921 .

[0312] In the above steps, as shown in Figures 14 and 43, the density of the dots 93 in the first region M1 is greater than the density of the dots 93 in the second region M2. The first region M1 is the region of the substrate 20 where the first groove 21 is located, and the second region M2 is the region of the substrate 20 excluding the first groove 21. The dots 93 can be formed by a laser dotting process, but the embodiments of the present disclosure are not limited thereto.

[0313] In some embodiments, referring to FIG39 , in the process of S200 , a second grating 440 is further formed, wherein the second grating 440 is disposed in the first groove 21 and located between the color conversion layer 320 and the scattering layer 310 .

[0314] Here, forming the second grating 440 may specifically include first forming a metal layer in the first groove 21 through a sputtering process, and the material of the metal layer may include, for example, aluminum and / or molybdenum; then, using femtosecond laser technology to perform laser ablation to generate a periodic nano-metal wire grid structure, thereby forming the second grating 440.

[0315] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0316] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, comprising: A substrate having a first surface and a second surface disposed opposite to each other; The first surface of the substrate is provided with a first groove; A light emitting device is disposed on the first surface of the substrate; the light emitting device comprises a light emitting area; A color conversion layer, disposed on a side of the light emitting device facing the second surface; and the orthographic projection of the light emitting area of ​​the light emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate; A scattering layer is arranged on a side of the color conversion layer away from the light-emitting device; and an orthographic projection of a light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate; Wherein, at least one of the light emitting device, the color conversion layer and the scattering layer is located in the first groove.

2. The light-emitting substrate according to claim 1, further comprising: A first circuit layer is disposed on the first surface of the substrate; the first circuit layer includes a first pad and a second pad; the first pad, the second pad and the light emitting device are all disposed in the first groove; and the light emitting device is connected to the first pad and the second pad; or, The light-emitting substrate further comprises: A second circuit layer is disposed on the first surface of the substrate; the second circuit layer includes a first pad; the first pad and the light emitting device are both disposed in the first groove; and the light emitting device is connected to the first pad; The third circuit layer is arranged on a side of the light emitting device away from the substrate; the third circuit layer includes a second solder pad, and the light emitting device is also connected to the second solder pad.

3. The light-emitting substrate according to claim 2, wherein: The light-emitting substrate includes a first circuit layer, and the light-emitting substrate further includes: A first insulating layer is provided on a side of the light emitting device away from the substrate; A first reflective layer is disposed on a side of the first insulating layer away from the substrate; or The light-emitting substrate comprises a second circuit layer and a third circuit layer, and the light-emitting substrate further comprises: The first insulating layer is arranged between the second circuit layer and the third circuit layer.

4. The light-emitting substrate according to claim 3, wherein: The transmittance of the first insulating layer is greater than or equal to 80%, and the first insulating layer fills the first groove; The light-emitting substrate further comprises: A reflective structure, disposed on at least one side of the circumference of the light emitting device; The reflective structure is configured to reflect the light emitted in the circumferential direction of the light emitting device, so that the light emitted in the circumferential direction of the light emitting device is emitted toward the second surface of the substrate.

5. The light-emitting substrate according to claim 4, wherein: The reflective structure comprises: A second groove is disposed on the first surface of the substrate; A plurality of reflective balls are disposed in the second groove.

6. The light emitting substrate according to claim 5, wherein: The cross section of the second groove is substantially an isosceles triangle, and the vertex angle of the isosceles triangle is 45° to 55°, and the cross section is substantially perpendicular to the boundary between the second groove and the first groove; and / or, The maximum depth of the second groove in the first direction is greater than or equal to the thickness of the light emitting device in the first direction; and the first direction is substantially perpendicular to the second surface.

7. The light-emitting substrate according to claim 5 or 6, wherein: The material of the reflective ball includes photonic crystal.

8. The light emitting substrate according to claim 4, wherein: The reflective structure comprises: A plurality of dielectric holes are arranged in an array on the first surface of the substrate; A plurality of reflective columns, one of the reflective columns is disposed in one of the medium holes.

9. The light emitting substrate according to claim 8, wherein: The included angle between the central axis of the medium hole and the first direction is 20° to 35°; the first direction is substantially perpendicular to the second surface; or, The maximum depth of the medium hole in the first direction is greater than or equal to the thickness of the light emitting device in the first direction.

10. The light-emitting substrate according to claim 8 or 9, wherein: The material of the reflective column includes photonic crystal.

11. The light emitting substrate according to claim 1, further comprising: A fourth circuit layer is disposed on the first surface of the substrate; the fourth circuit layer includes a first pad and a second pad; the first pad and the second pad are disposed on opposite sides of the first groove; The orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate; and the light-emitting device is connected to the first pad and the second pad outside the first groove.

12. The light emitting substrate according to claim 11, further comprising: The second reflective layer is arranged on a side of the light emitting device away from the substrate and at least covers the light emitting device.

13. The light-emitting substrate according to any one of claims 1 to 12, further comprising: A dimming structure, disposed on the second surface of the substrate; The dimming structure is configured to adjust the light output amount of the first area and the second area; The first region is a region of the substrate where the first groove is located, and the second region is a region of the substrate excluding the first groove.

14. The light emitting substrate according to claim 13, wherein: The dimming structure comprises: The first grating is arranged on the second surface of the substrate; the duty ratio of the first grating in the first area is smaller than the duty ratio of the first grating in the second area.

15. The light emitting substrate according to claim 14, wherein: In the first region, the widths of the slits of the first grating are substantially equal; and / or, Two adjacent first grooves in the second direction are symmetrical with respect to the first axis, and the second direction is substantially perpendicular to the extension direction of the slit of the first grating; in the second region, from the first groove to the first axis, the width of the slit of the first grating gradually increases.

16. The light emitting substrate according to claim 13, wherein: The dimming structure comprises: A light guide plate is arranged on the second surface of the substrate; a side of the light guide plate away from the substrate is provided with a plurality of third Grooves; A plurality of dots are located in the third groove; a density of the dots in the first area is greater than a density of the dots in the second area.

17. The light emitting substrate according to claim 16, wherein: Two adjacent first grooves are symmetrical with respect to the second axis. In the second area, the density of the dots increases gradually from the first groove to the second axis.

18. The light-emitting substrate according to any one of claims 1 to 17, further comprising: The second grating is disposed in the first groove and between the color conversion layer and the scattering layer. The second grating is configured to transmit light whose polarization direction is substantially parallel to a third direction, and the third direction is substantially parallel to the second surface.

19. The light emitting substrate according to any one of claims 1 to 18, wherein The color conversion layer is disposed in the first groove; The light-emitting substrate further comprises: The first encapsulation layer is arranged on a side of the color conversion layer away from the substrate.

20. The light emitting substrate according to any one of claims 1 to 19, wherein A side wall on at least one side of the first groove has a step structure.

21. The light emitting substrate according to any one of claims 1 to 20, wherein The orthographic projections of the light-emitting areas of at least two light-emitting devices on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

22. The light emitting substrate according to claim 21, wherein: The plurality of light emitting devices are arranged in an array, and the orthographic projections of the light emitting areas of at least two light emitting devices in the same row and / or column on the second surface of the substrate are within the range of the orthographic projection of the same first groove on the second surface of the substrate.

23. The light-emitting substrate according to claim 21 or 22, comprising: A light-emitting unit, comprising a plurality of the light-emitting devices connected in series and / or in parallel; The orthographic projections of the light-emitting areas of the plurality of light-emitting devices belonging to the same light-emitting unit on the second surface of the substrate are located within the range of the orthographic projection of the same first groove on the second surface of the substrate.

24. The light-emitting substrate according to any one of claims 1 to 23, further comprising: The third reflective layer covers the first surface of the substrate and exposes at least a portion of the first groove.

25. The light emitting substrate according to claim 24, further comprising: A reflecting prism is arranged between the third reflecting layer and the substrate.

26. A backlight module, comprising: The light-emitting substrate according to any one of claims 1 to 25; The light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other; A diffusion sheet, arranged on the light-emitting side of the light-emitting substrate; The composite film is arranged on a side of the diffusion sheet away from the light-emitting substrate.

27. A display device comprising: The backlight module as claimed in claim 26; The display panel is arranged on a side of the composite film in the backlight module away from the light-emitting substrate.

28. The display device according to claim 27, wherein: The light-emitting substrate includes a second grating; and the display panel includes: Liquid crystal layer; The first polarizer is arranged on a side of the liquid crystal layer away from the light-emitting substrate; the transmission axis of the first polarizer is substantially perpendicular or substantially parallel to the polarization direction of the light selectively transmitted by the second grating.

29. A method for preparing a light-emitting substrate, for preparing the light-emitting substrate according to any one of claims 1 to 25, comprising: forming a first groove on the substrate; The substrate has a first surface and a second surface arranged opposite to each other; The first surface of the substrate is provided with a first groove; forming a scattering layer, a color conversion layer and a light emitting device; The color conversion layer is arranged on the side of the light-emitting device facing the second surface; the light-emitting device includes a light-emitting area, and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the color conversion layer on the substrate; the scattering layer is arranged on the side of the color conversion layer away from the light-emitting device; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the substrate is located within the range of the orthographic projection of the scattering layer on the substrate; wherein, at least one of the light-emitting device, the color conversion layer and the scattering layer is located in the first groove.

30. The preparation method according to claim 29, wherein: The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A first circuit layer is formed on a side of the first packaging layer away from the substrate; the first circuit layer includes a first pad and a second pad; the first pad and the second pad are arranged in the first groove; A light emitting device is formed in the first groove; the light emitting device is connected to the first pad and the second pad.

31. The preparation method according to claim 29, wherein The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A second circuit layer is formed on a side of the first packaging layer away from the substrate; the second circuit layer includes a first pad; the first pad is disposed in the first groove; A light emitting device is formed in the first groove; the light emitting device is connected to the first pad; A third circuit layer is formed on a side of the light emitting device away from the substrate; the third circuit layer includes a second pad, The light emitting device is also connected to the second pad.

32. The preparation method according to claim 30 or 31, wherein: The forming of the scattering layer, the color conversion layer and the light emitting device further comprises: A first insulating layer is formed; when the light-emitting substrate includes a first circuit layer, the first insulating layer is arranged on a side of the light-emitting device away from the substrate; when the light-emitting substrate includes a third circuit layer, the first insulating layer is arranged between the second circuit layer and the third circuit layer.

33. The preparation method according to claim 32, wherein: The first insulating layer fills the first groove, and after forming the first groove, the preparation method further includes: forming a second groove; the second groove is disposed on the first surface of the substrate and is located on at least one side of the circumference of the first groove; The second groove is filled with reflective balls.

34. The preparation method according to claim 32, wherein: The first insulating layer fills the first groove, and after forming the first groove, the preparation method further includes: forming a plurality of dielectric holes; the plurality of dielectric holes are disposed on the first surface of the substrate and are located on at least one side of the circumference of the first groove; A reflective column is filled in the medium hole; one reflective column is arranged in one medium hole.

35. The preparation method according to claim 29, wherein The forming of the scattering layer, the color conversion layer and the light emitting device comprises: forming a scattering layer and a color conversion layer in the first groove in sequence; forming a first encapsulation layer on a side of the color conversion layer away from the substrate; A fourth circuit layer is formed on a side of the first packaging layer away from the substrate; the fourth circuit layer includes a first pad and a second pad; the first pad and the second pad are arranged on opposite sides of the first groove; A light-emitting device is formed on a side of the fourth circuit layer away from the substrate; the light-emitting device is connected to the first pad and the second pad outside the first groove; and the orthographic projection of the light-emitting area of ​​the light-emitting device on the second surface of the substrate is located within the range of the orthographic projection of the first groove on the second surface of the substrate.

36. The preparation method according to any one of claims 29 to 35, further comprising: forming a first grating on the second surface of the substrate; The duty ratio of the first grating in the first region is smaller than the duty ratio of the first grating in the second region; The first region is a region of the substrate where the first groove is located, and the second region is a region of the substrate excluding the first groove.

37. The preparation method according to any one of claims 29 to 35, further comprising: forming a light guide plate on the second surface of the substrate; A plurality of third grooves are provided on a side of the light guide plate away from the substrate; forming dots in the third groove; The density of the dots in the first area is greater than the density of the dots in the second area density; The first region is a region of the substrate where the first groove is located, and the second region is a region of the substrate excluding the first groove.

38. According to the preparation method described in any one of claims 29 to 37, in the process of forming the scattering layer, the color conversion layer and the light-emitting device, a second grating is also formed; the second grating is arranged in the first groove and is located between the color conversion layer and the scattering layer; the second grating is configured to transmit light whose polarization direction is substantially parallel to a third direction, and the third direction is substantially parallel to the second surface.

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