Electronic device

Abstract

An electronic device (20) includes a lead frame (40), and a sealing body (30) that seals the lead frame (40). The lead frame (40) includes: a fusion part (43) that extends in a predetermined direction; and an extension part (44) that is provided continuously and integrally with the fusion part (43), at least a portion of the extension part extending from the fusion part (43) in a direction different from the predetermined direction, and the extension part melting from heat that the fusion part (43) generates by energization. The sealing body (30) includes: at least a section that covers an outer peripheral surface of the extension part (44); and an outflow passage (31) that extends along the extension part (44) to open to a side surface (30c) of the sealing body (30), and that is for allowing the fusion part (43) and the extension part (44), which are melted by energization, to escape out of the sealing body (30).

Description

electronic equipment CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based on Patent Application No. 2023-137530 filed in Japan on August 25, 2023, and the contents of the original application are incorporated by reference in their entirety.

[0002] TECHNICAL FIELD The disclosure herein relates to electronic devices.

[0003] Patent Document 1 discloses an electronic device including a wiring member having a fusing portion and a sealing body that seals the wiring member. The contents of the prior art document are incorporated by reference as an explanation of the technical elements in this specification.

[0004] JP 2011-146539 A

[0005] In Patent Document 1, the sealing body (molded member) is molded with the mold for molding the sealing body in contact with the surface of the fusing portion (connecting portion), thereby exposing at least a portion of the fusing portion from the sealing body. As a result, there is a risk that the fusing portion will not exhibit the desired interruption characteristics due to dimensional variations in the fusing portion and mold, variations in the relative positions of the fusing portion and mold, etc.

[0006] Also known are electronic devices with a sealed fusing portion. In this structure, the molten fusing portion breaks through the sealing body due to an increase in pressure, is released to the outside of the sealing body, and leads to a disconnection. Therefore, there is a risk that the fusing portion will not exhibit the desired interruption characteristics due to variations in the thickness of the sealing body that covers the fusing portion. Further improvements are required in electronic devices in terms of the above and other aspects not mentioned.

[0007] One disclosed object is to provide an electronic device that can exhibit desired blocking characteristics.

[0008] The symbols in parentheses in the claims and technical concepts are examples showing the correspondence with the specific means described in the embodiments below as one aspect, but do not limit the technical scope.

[0009] One disclosed embodiment of an electronic device comprises a wiring member having a fusing portion extending in a predetermined direction; and a sealing body that seals the wiring member, wherein the wiring member is integrally formed contiguous with the fusing portion, at least a portion of which extends from the fusing portion in a direction different from the predetermined direction, and has an extension portion that melts with heat generated in the fusing portion when electricity is passed through it, and the sealing body is configured to include at least a portion that covers the outer peripheral surface of the extension portion, extends along the extension portion, opens on the outer surface of the sealing body, and has an outflow passage for allowing the fusing portion and extension portion that melt when electricity is passed through to escape outside the sealing body.

[0010] According to the disclosed electronic device, the wiring member has an extension portion. The extension portion is configured to melt with heat generated by a fusion portion when current is passed through it. The sealing body has an outflow passage originating from the extension portion, formed by covering the extension portion. The outflow passage is blocked by the extension portion before the extension portion melts, and when the extension portion melts, it functions as a passage for allowing the molten fusion portion and extension portion to escape to the outside of the sealing body. The fusion portion that melts when current is passed through it can escape to the outside of the sealing body through the outflow passage without the mold that forms the sealing body coming into contact with the fusion portion. Therefore, the desired interruption characteristics can be exhibited.

[0011] The various aspects disclosed in this specification employ different technical means to achieve their respective objectives. The objectives, features, and advantages disclosed in this specification will become more apparent by referring to the following detailed description and the accompanying drawings.

[0012] 4 is a diagram showing an equivalent circuit of the electronic device according to the first embodiment; FIG. 5 is a plan view of the electronic device as seen from one side; FIG. 6 is a plan view of the electronic device as seen from the back side; FIG. 7 is a side view as seen from the Y1 direction; FIG. 8 is a cross-sectional view along line VV shown in FIG. 2; FIG. 9 is a cross-sectional view along line VI-VI shown in FIG. 2; FIG. 10 is a cross-sectional view along line VII-VII shown in FIG. 2; FIG. 11 is an enlarged view of region VIII shown in FIG. 4; FIG. 12 is a flowchart showing a manufacturing method; FIG. 13 is a side view as seen from the Y2 direction; FIG. 14 is a diagram showing the arrangement of semiconductor elements; FIG. 15 is a diagram showing the arrangement of clips; FIG. 16 is a diagram showing the molding of a sealing body; FIG. 17 is a side view as seen from the Y3 direction; FIG. 18 is a diagram showing dicing; FIG. 19 is a diagram showing the cross-sectional shape of a lead frame; FIG. 20 is a diagram showing current concentration; FIG. 21 is a diagram showing a state in which a molten portion flows out; FIG. 22 is a plan view showing a state after a fusion portion has flowed out; FIG. 23 is a cross-sectional view showing a state after a fusion portion has flowed out; FIG. 24 is a plan view of the electronic device according to the second embodiment as seen from the back side; FIG. 25 is a cross-sectional view of the electronic device; FIG. 26 is a diagram showing an equivalent circuit of the electronic device according to the third embodiment; FIG. 27 is a plan view of the electronic device as seen from one side; FIG. 28 is a plan view as seen from the back side; FIG. 29 is a side view as seen from the Y4 direction. 35. A cross-sectional view taken along line XXVIII-XXVIII shown in FIG. 25. A plan view of an electronic device according to a fourth embodiment, as seen from one side. A side view taken from the Y5 direction shown in FIG. 29. A cross-sectional view taken along line XXXI-XXXI shown in FIG. 29. A plan view of an electronic device according to a fifth embodiment, as seen from one side. A side view taken from the X1 direction. A cross-sectional view taken along line XXXIV-XXXIV shown in FIG. 32. A plan view of an electronic device according to a sixth embodiment, as seen from one side. A plan view taken from the back side. A cross-sectional view taken along line XXXVII-XXXVII shown in FIG. 35. A plan view of an electronic device according to a seventh embodiment, as seen from one side. A cross-sectional view taken along line XXXIX-XXXIX shown in FIG. 38. A plan view of an electronic device according to an eighth embodiment, as seen from one side. A plan view taken from the back side. A plan view of an electronic device according to a ninth embodiment, as seen from one side. A side view taken from the Y6 direction shown in FIG. 42. A cross-sectional view taken along line XLIV-XLIV shown in FIG. 42. A plan view of an electronic device according to a tenth embodiment, as seen from one side. A plan view taken from the back side. FIG. 23 is a plan view of an electronic device according to an eleventh embodiment, seen from one side.Fig. 49 is a cross-sectional view taken along line XLVIII-XLVIII shown in Fig. 47. Fig. 49 is a plan view of the electronic device according to the twelfth embodiment, as seen from one side. Fig. 49 is a plan view of the electronic device according to the twelfth embodiment, as seen from the back side. Fig. 49 is a side view of the electronic device according to the twelfth embodiment, as seen from the Y7 direction. Fig. 49 is a cross-sectional view taken along line LII-LII shown in Fig. 49. Fig. 49 is a cross-sectional view showing an extension portion in the electronic device according to the thirteenth embodiment. Fig. 49 is a cross-sectional view showing another example. Fig. 49 is a cross-sectional view showing another example.

[0013] Hereinafter, several embodiments will be described with reference to the drawings. Note that in each embodiment, corresponding components are designated by the same reference numerals, and redundant description may be omitted. When only a portion of the configuration is described in each embodiment, the configuration of another embodiment described previously can be applied to the remaining portions of the configuration. Furthermore, in addition to the combinations of configurations explicitly stated in the description of each embodiment, configurations of several embodiments can also be partially combined together even if not explicitly stated, as long as there is no particular problem with the combination. Note that the term "A and / or B" means at least one of A and B. In other words, it may include only A, only B, or both A and B.

[0014] First Embodiment First, the circuit configuration of an electronic device will be described with reference to FIG.

[0015] <Circuit Configuration of Electronic Device> Fig. 1 shows an equivalent circuit of an electronic device. The electronic device according to this embodiment provides upper and lower arm circuits 10 for one phase. The upper and lower arm circuits 10 constitute an inverter. The inverter is configured with upper and lower arm circuits 10 for three phases, i.e., three electronic devices. The inverter is a DC-AC conversion circuit. The inverter converts a DC voltage into a three-phase AC voltage according to switching control by a control circuit (not shown), and outputs the voltage to a rotating electric machine.

[0016] The upper and lower arm circuit 10 has an upper arm 10H and a lower arm 10L. The upper and lower arm circuit 10 is a series circuit of the upper arm 10H and the lower arm 10L. In the series circuit, the upper arm 10H is the high-side arm, and the lower arm 10L is the low-side arm. Hereinafter, the upper arm 10H and the lower arm 10L may be simply referred to as arms 10H and 10L.

[0017] In the example shown in FIG. 1 , the switching elements constituting each of the arms 10H and 10L are n-channel MOSFETs. MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. The number of switching elements constituting each of the arms 10H and 10L is not particularly limited. It may be one or more. In FIG. 1 , each of the arms 10H and 10L has one MOSFET.

[0018] The upper and lower arm circuits 10 have gate terminals G1 and G2 as external connection terminals. The gate terminal G1 is electrically connected to the gate electrode of the MOSFET on the upper arm 10H side. The gate terminal G2 is electrically connected to the gate electrode of the MOSFET on the lower arm 10L side. The gate terminals G1 and G2 are terminals for inputting gate drive signals to the corresponding gate electrodes. The upper and lower arm circuits 10 have drain terminals D1 and D2 and source terminals S1 and S2. The drain terminal D1 is electrically connected to the drain electrode of the MOSFET on the upper arm 10H side. The source terminal S1 is electrically connected to the source electrode of the MOSFET on the upper arm 10H side. The drain terminal D2 is electrically connected to the drain electrode of the MOSFET on the lower arm 10L side. The source terminal S2 is electrically connected to the source electrode of the MOSFET on the lower arm 10L side.

[0019] The source electrode of the MOSFET on the upper arm 10H side and the drain electrode of the MOSFET on the lower arm 10L side are electrically connected to each other. The source terminal S1 and / or the drain terminal D2 are electrically connected to the winding of the corresponding phase of the rotating electric machine via an output line. The drain terminal D1 is electrically connected to the P line 11, which is the high-potential power supply line. The source terminal S2 on the lower arm 10L side is electrically connected to the N line 12, which is the low-potential power supply line.

[0020] The switching elements are not limited to MOSFETs. For example, IGBTs may be used. IGBT stands for Insulated Gate Bipolar Transistor. A freewheeling diode may be connected in anti-parallel to each switching element. While the electronic device is applied to an inverter, this is not limiting. For example, the electronic device may be applied to an H-bridge circuit or a converter, which is a DC-DC conversion circuit. The external connection terminals may include an output terminal instead of the source terminal S1 and the drain terminal D2. The output terminal is electrically connected to the source electrode of the MOSFET on the upper arm 10H side and the drain electrode of the MOSFET on the lower arm 10L side.

[0021] <Schematic Structure of Electronic Device> Next, a schematic structure of the electronic device will be described with reference to Figs. 2 to 6. Fig. 2 is a plan view of the electronic device as seen from one side of the sealing body. In Fig. 2, the sealing body is shown in a see-through manner to show the parts covered by the sealing body. Fig. 3 is a plan view as seen from the back side of the sealing body. Fig. 4 is a side view as seen from the Y1 direction shown in Fig. 2. Fig. 5 is a cross-sectional view taken along line VV shown in Fig. 2. Fig. 6 is a cross-sectional view taken along line VI-VI shown in Fig. 2.

[0022] In the following, the thickness direction of the lead frame is referred to as the Z direction. The direction perpendicular to the Z direction is referred to as the X direction. The direction perpendicular to both the Z direction and the X direction is referred to as the Y direction. Unless otherwise specified, the shape viewed from the Z direction, in other words, the shape along the XY plane defined by the X and Y directions, is referred to as the planar shape. The planar view from the Z direction may sometimes be simply referred to as the planar view.

[0023] The electronic device 20 shown in Figure 2 and other figures provides the upper and lower arm circuits 10 for one phase, i.e., the inverter, shown in Figure 1. The electronic device 20 has a 2-in-1 package structure. The electronic device 20 includes a sealing body 30, a lead frame 40, a semiconductor element 50, and a clip 60. The electronic device 20 including the semiconductor element 50 may be referred to as a semiconductor package, a semiconductor device, or the like.

[0024] The encapsulant 30 encapsulates some of the other elements that make up the electronic device 20. The remaining parts of the other elements are exposed to the outside of the encapsulant 30. The encapsulant 30 is a molded body made of, for example, a resin. An example of the resin is an epoxy-based resin. The encapsulant 30 is molded by, for example, a transfer molding method. The encapsulant 30 may also be called a molded resin, a resin molded body, or the like.

[0025] The sealing body 30 has one surface 30a and a back surface 30b, which is the surface opposite to the one surface 30a in the Z direction, as surfaces (outer surfaces) forming the outer periphery. The one surface 30a and the back surface 30b may be, for example, substantially flat. The sealing body 30 has side surfaces that are continuous with the one surface 30a and the back surface 30b. The sealing body 30 has a substantially rectangular shape in a plan view in the Z direction. The sealing body 30 has side surfaces 30c, 30d, 30e, and 30f. The side surface 30c is the surface opposite to the side surface 30d in the Y direction. The side surface 30e is the surface opposite to the side surface 30f in the X direction. The sealing body 30 has an outflow passage 31. Details of the outflow passage 31 will be described later.

[0026] The lead frame 40 is a plate material made of a metal with good conductivity, such as Cu or a Cu alloy. The lead frame 40 provides a wiring function. The lead frame 40 illustrated in this embodiment has a drain island 41, a source island 42, a fusing portion 43, an extension portion 44, a suspension lead 45, a signal terminal 46, and a reinforcing terminal 47. The lead frame 40 corresponds to a wiring member. Hereinafter, the drain island 41 and the source island 42 may be simply referred to as islands 41 and 42.

[0027] The islands 41 and 42 are portions of the lead frame 40 on which other elements constituting the electronic device 20 are mounted. The thickness direction of the islands 41 and 42 is the Z direction. The semiconductor element 50 is connected to the drain island 41 via a bonding material such as solder (not shown). The clip 60 is connected to the source island 42 via a bonding material.

[0028] The drain island 41 includes drain islands 411 and 412. In this embodiment, the drain island 411 constitutes the upper arm 10H, and the drain island 412 constitutes the lower arm 10L. The drain islands 411 and 412 have a generally rectangular shape in plan view and extend along the Y direction. The drain island 411 and the drain island 412 are arranged opposite each other in the X direction with a slight offset in the Y direction. The source island 42 includes source islands 421 and 422. In this embodiment, the source island 421 constitutes the upper arm 10H, and the source island 422 constitutes the lower arm 10L. The source islands 421 and 422 have a generally rectangular shape in plan view and extend along the X direction.

[0029] The source island 421 and the drain island 411 are aligned in the Y direction with the source island 421 facing the side surface 30c. The source island 422 and the drain island 412 are aligned in the Y direction with the source island 422 facing the side surface 30d. In this way, the arrangement of the source island 42 relative to the drain island 41 is reversed on the upper arm 10H side and the lower arm 10L side. The islands 41 and 42 on the upper arm 10H side and the islands 41 and 42 on the lower arm 10L side are dyad-symmetric.

[0030] The fusing portion 43 melts when current is applied, thereby interrupting the electrical path. The fusing portion 43 generates heat and melts when current is applied. The fusing portion 43 melts when an overcurrent flows, thereby protecting normal circuit elements, such as normal semiconductor elements 50. The fusing portion 43 may also be referred to as a fuse, a disconnecting portion, or the like. The fusing portion 43 is provided between the source island 421 and the drain island 412. The fusing portion 43 is provided integrally and continuously with the source island 421 and the drain island 412. The fusing portion 43 is provided in a portion that connects (couples) the source island 421 and the drain island 412.

[0031] Fusing portion 43 extends in the X direction. One end of fusing portion 43 is connected to source island 421, and the other end is connected to drain island 412. The length in the Y direction of fusing portion 43, i.e., the width, is approximately equal to the width of source island 421 in the example shown in Figure 2. The integrated structure including source island 421, fusing portion 43, and drain island 412 is approximately L-shaped in plan view.

[0032] The extension portion 44 is provided integrally and continuously with the fusing portion 43. At least a portion of the extension portion 44 extends from the end on the fusing portion 43 side in a direction different from the X direction in which the fusing portion 43 extends. In this embodiment, the extension portion 44 extends in the Y direction over its entire length. One of the ends of the extension portion 44 is continuous with the fusing portion 43. The other end of the extension portion 44, namely, the terminal end 44a, is approximately flush with the side surface 30c and is exposed to the outside of the sealing body 30. The terminal end 44a (end face) is a cut surface.

[0033] The length in the X direction of the extension portion 44, i.e., the width, is shorter than the length (width) in the Y direction of the fusing portion 43. The cross-sectional area of ​​the extension portion 44 is smaller than the cross-sectional area of ​​the fusing portion 43. The extension portion 44 melts when it receives heat generated by the fusing portion 43 when current is passed through it. The extension portion 44 is provided as one of the suspension leads 45. In the example shown in FIG. 2 , one extension portion 44 is connected to the fusing portion 43.

[0034] The suspension leads 45 hold other elements of the lead frame 40 during the manufacturing process. The suspension leads 45 are cut when the electronic devices 20 are separated into individual pieces. The ends of the suspension leads 45 are also cut surfaces. In this embodiment, a suspension lead 45 is provided for each of the islands 41 and 42. The suspension leads 45 hold the islands 41 and 42. One end of the suspension lead 45 is connected to the corresponding island 41 or 42, and the other end is exposed to the outside of the sealing body 30, approximately flush with the side surface of the sealing body 30.

[0035] The suspension leads 45 extend in the X direction or the Y direction. The suspension leads 45 extending in the X direction are exposed to the outside from the side surface 30c or the side surface 30d. The suspension leads 45 extending in the X direction are provided on each of the islands 41 and 42. The suspension leads 45 extending in the Y direction are exposed to the outside from the side surface 30e or the side surface 30f. The suspension leads 45 extending in the Y direction are also provided on each of the islands 41 and 42.

[0036] The signal terminals 46 are electrically connected to pads of the semiconductor element 50. The signal terminals 46 include at least a terminal electrically connected to a gate pad, i.e., a gate terminal. In this embodiment, the signal terminals 46 on the upper arm 10H side are exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminals 46 on the upper arm 10H side are connected to the drain island 411 in the X direction and are disposed between two suspension leads 45 exposed on the side surface 30d. The signal terminals 46 on the lower arm 10L side are connected to the drain island 412 in the X direction and are disposed between two suspension leads 45 exposed on the side surface 30c.

[0037] The reinforcing terminals 47 are provided at the four corners of the sealing body 30 in a plan view. The reinforcing terminals 47 reinforce the joint structure in which the electronic device 20 is solder-joined to a substrate (not shown). Each of the reinforcing terminals 47 is exposed on two adjacent side surfaces of the sealing body 30.

[0038] The lead frame 40 has locally varying thicknesses. The lead frame 40 has a thick portion 40a and a thin portion 40b that is thinner than the thick portion 40a. The entire upper surface of the lead frame 40 is located at approximately the same height in the Z direction. The entire upper surface is covered by the sealing body 30. Of the lower surface of the lead frame 40, the thick portion 40a is exposed from the back surface 30b of the sealing body 30. The under surface of the thick portion 40a is approximately flush with the back surface 30b and exposed from the sealing body 30. Of the lower surface of the lead frame 40, the thin portion 40b is covered by the sealing body 30. The under surface of the thin portion 40b is not exposed from the back surface 30b. Of the lead frame 40, the portion indicated by the solid line in FIG. 3, i.e., the exposed portion, is the thick portion 40a, and the portion indicated by the dashed line is the thin portion 40b.

[0039] The upper surface of the lead frame 40 is the surface on the side of one surface 30a of the sealing body 30, and the lower surface is the surface on the side of the back surface 30b. The lead frame 40 is formed by etching. By half-etching from the lower surface side of the lead frame 40, the thin portion 40b has a thickness approximately half that of the thick portion 40a and is covered with the sealing body 30.

[0040] Each of the islands 41 and 42 has a thick portion 40a and a thin portion 40b. The thick portion 40a occupies most of the islands 41 and 42. The thin portion 40b is provided on the outer periphery of the islands 41 and 42 so as to surround the thick portion 40a. Note that the two-dot chain line in FIG. 2 indicates the boundary between the thick portion 40a and the thin portion 40b of the islands 41 and 42. The thick portion 40a is located inside the two-dot chain line, and the thin portion 40b is located outside the two-dot chain line. As shown in FIG. 3 , the portion of the drain island 411 exposed on the back surface 30b provides the drain terminal D1. The portion of the drain island 412 exposed on the back surface 30b provides the drain terminal D2. The portion of the source island 421 exposed on the back surface 30b provides the source terminal S1. The portion of the source island 422 exposed on the back surface 30b provides the source terminal S2.

[0041] The islands 41 and 42 may have only the thick portion 40 a. By having the thin portion 40 b in addition to the thick portion 40 a as in the present embodiment, the islands 41 and 42 can be prevented from falling off from the sealing body 30 due to an anchor effect.

[0042] The fusing portion 43, the extension portion 44, and the hanging lead 45 only have the thin portion 40b. The lower surfaces of the fusing portion 43, the extension portion 44, and the hanging lead 45 are covered by the sealing body 30. The fusing portion 43, the extension portion 44, and the hanging lead 45 are not exposed on the back surface 30b.

[0043] The signal terminal 46 and the reinforcing terminal 47 only have the thick portion 40a. The signal terminal 46 and the reinforcing terminal 47 are exposed on the back surface 30b. Of the signal terminal 46, the portion that is exposed on the back surface 30b and electrically connected to the gate pad of the semiconductor element 50 provides the gate terminal. Specifically, the exposed portion of the signal terminal 46 on the upper arm 10H side provides the gate terminal G1. The exposed portion of the signal terminal 46 on the lower arm 10L side provides the gate terminal G2.

[0044] The semiconductor element 50 is formed by forming a switching element on a semiconductor substrate made of silicon (Si), a wide bandgap semiconductor with a wider bandgap than silicon, or the like. Examples of wide bandgap semiconductors that may be used include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond. The semiconductor element 50 may also be referred to as a semiconductor chip, a power element, or the like.

[0045] As an example, in this embodiment, a vertical element is formed on a semiconductor substrate. The vertical element is configured to allow a main current to flow in the thickness direction of the semiconductor element 50 (semiconductor substrate). The semiconductor element 50 is disposed on the corresponding drain island 41 so that its thickness direction is substantially parallel to the thickness direction of the islands 41 and 42, i.e., the Z direction. The semiconductor element 50 has main electrodes on both sides in the thickness direction. The semiconductor element 50 of this embodiment is formed by forming an n-channel MOSFET as a vertical element on the semiconductor substrate. As shown in FIGS. 2 and 5 , the semiconductor element 50 has a drain electrode 51 on one side as its main electrode and a source electrode 52 on the back side, which is the opposite side. The semiconductor element 50 is disposed on the thick portion 40 a of the corresponding drain island 41 so that the drain electrode 51 faces the drain island 41.

[0046] When the MOSFET is turned on, a current (main current) flows between the main electrodes, that is, between the drain electrode 51 and the source electrode 52. The drain electrode 51 is the main electrode on the high potential side, and the source electrode 52 is the main electrode on the low potential side. The drain electrode 51 is formed over almost the entire surface. The source electrode 52 is formed on a part of the back surface.

[0047] As shown in Fig. 2, the semiconductor element 50 has pads 53, which are signal electrodes, on its back surface. The pads 53 are formed at positions on the back surface that are different from the source electrodes 52. The pads 53 include at least a gate pad. For convenience, only one pad 53 is shown in Fig. 2. The pads 53 (gate pads) are electrically connected to the corresponding signal terminals 46 via bonding wires 70.

[0048] The semiconductor element 50 includes a semiconductor element 501 disposed on the drain island 411 and a semiconductor element 502 disposed on the drain island 412. In this embodiment, the semiconductor element 501 constitutes the upper arm 10H, and the semiconductor element 502 constitutes the lower arm 10L. The drain electrode 51 of the semiconductor element 501 is connected to the drain island 411 via a bonding material such as solder. The drain electrode 51 of the semiconductor element 502 is connected to the drain island 412 via a bonding material.

[0049] The semiconductor elements 501 and 502 have, for example, a common configuration. The semiconductor elements 501 and 502 are arranged side by side in the X direction. The semiconductor elements 501 and 502 are arranged with a slight offset in the Y direction. The semiconductor element 502 is arranged rotated approximately 180 degrees around the Z axis with respect to the semiconductor element 501. The semiconductor elements 50 have a generally rectangular shape in plan view. In each semiconductor element 50, the source electrode 52 and the pad 53 are arranged side by side in the Y direction. In the semiconductor element 501, the source electrode 52 is arranged on the side surface 30c of the sealing body 30, and the pad 53 is arranged on the side surface 30d. In the semiconductor element 502, the source electrode 52 is arranged on the side surface 30d, and the pad 53 is arranged on the side surface 30c.

[0050] The clip 60 may also be referred to as a bridging member, a relay member, a metal bridge, or the like. The clip 60 is a plate made of a metal with good conductivity, such as Cu or a Cu alloy. The clip 60 may be formed by punching a metal plate of a predetermined thickness and then pressing it. The clip 60 may also be formed using a profiled material with a partially different thickness. The clip 60 may also be formed by etching.

[0051] The clip 60 electrically connects the source electrode 52 of the semiconductor element 50 to the source island 42. The clip 60 has connection portions 61 and 62. The connection portion 61 is a portion that connects to the source electrode 52. The connection portion 61 is connected to the source electrode 52 via a bonding material such as solder. The connection portion 62 is a portion that connects to the source island 42. The connection portion 62 is connected to the source island 422 via a bonding material.

[0052] The clip 60 includes a clip 601 connected to the semiconductor element 501 and a clip 602 connected to the semiconductor element 502. In this embodiment, the clip 601 constitutes the upper arm 10H, and the clip 602 constitutes the lower arm 10L. The clip 601 extends in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 to the source island 421. The clip 602 extends in the Y direction in a plan view. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 to the source island 422.

[0053] As described above, the encapsulant 30 encapsulates the remaining elements of the electronic device 20, i.e., the lead frame 40, the semiconductor element 50, and the clip 60, which are the remaining elements excluding the encapsulant 30. The remaining elements are not exposed from the first surface 30a of the encapsulant 30. The remaining elements are exposed from the back surface 30b and the side surfaces 30c, 30d, 30e, and 30f. Of the lead frame 40, the islands 41 and 42 soldered to the substrate, the signal terminals 46, and the reinforcing terminals 47 are exposed and substantially flush with the back surface 30b. The suspension leads 45 and the reinforcing terminals 47 are exposed and substantially flush with the corresponding side surfaces 30c, 30d, 30e, and 30f. The signal terminals 46 are exposed and substantially flush with the corresponding side surfaces 30c and 30d. The extension portions 44 are exposed and substantially flush with the side surface 30c. Thus, the electronic device 20 does not have terminals extending outward from the encapsulant 30. The electronic device 20 has a QFN type non-leaded package structure. QFN is an abbreviation for Quad Flat Non-lead package.

[0054] <Outlet Passage> Next, the outflow passage 31 will be described with reference to Figures 2 to 4, 7, and 8. Figure 7 is a cross-sectional view taken along line VII-VII in Figure 2. Figure 8 is an enlarged view of region VIII indicated by the two-dot chain line in Figure 4.

[0055] The outflow passage 31 is a passage for allowing the fusion portion 43 and the extension portion 44, which are melted by energization, to escape to the outside of the sealing body 30. The outflow passage 31 is configured to include at least a portion that covers the outer peripheral surface of the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the outer surface of the sealing body 30. In this embodiment, the extension portion 44 extends in the Y direction from the fusion portion 43. The terminal end 44a of the extension portion 44 is exposed and approximately flush with the side surface 30c. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The outflow passage 31 opens to the side surface 30c. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c.

[0056] The outflow passage 31 is a hollow portion having a cross-sectional area substantially equal to that of the extension portion 44, extending from the fusion portion 43 in the Y direction and opening to the side surface 30c. The hollow portion is a hole provided in the plug 30, extending from the side surface 30c in the Y direction. Before the extension portion 44 melts, at least a portion of the outflow passage 31 is blocked by the extension portion 44. In this embodiment, the extension portion 44 extends from the fusion portion 43 to the side surface 30c, and substantially the entire outflow passage 31 is blocked by the extension portion 44. The plug 30 has an outflow passage 31 derived from the extension portion 44, formed by covering the extension portion 44. The outflow passage 31 is provided substantially parallel to the lower surfaces (exposed surfaces) of the islands 41, 42 exposed from the plug 30. The outflow passage 31 is provided substantially parallel to the back surface 30b.

[0057] <Manufacturing Method> Next, an example of a manufacturing method for the electronic device 20 will be described with reference to FIGS. 9 to 16. FIG. 9 is a flowchart showing the manufacturing method. FIG. 10 is a plan view showing the lead frame before cutting. FIG. 11 is a side view seen from the Y2 direction shown in FIG. 10. FIG. 12 is a plan view showing a state in which a semiconductor element is arranged. FIG. 13 is a plan view showing a state in which a clip is arranged. FIG. 14 is a plan view showing a state in which a sealing body has been molded. FIG. 15 is a side view seen from the Y3 direction shown in FIG. 14. FIG. 16 is a diagram showing dicing. Below, an example in which solder is used as the bonding material will be shown.

[0058] As shown in FIG. 9 , first, a lead frame before singulation is prepared (step S10). As shown in FIG. 10 , the lead frame 40P before singulation has elements for multiple products, i.e., multiple lead frames 40. The multiple lead frames 40 are arranged in a matrix. As an example, the lead frame 40P has a total of 50 lead frames 40, with 5 rows and 10 columns. Each lead frame 40 is connected to an outer periphery frame and a lattice frame. The outer periphery frame is provided on the outer periphery of the lead frame 40P in a plan view so as to surround the multiple lead frames 40. The lattice frame is provided to separate the multiple lead frames 40. The lattice frame is provided between adjacent lead frames 40.

[0059] 11, a back tape 71 is attached to almost the entire lower surface of the prepared lead frame 40P. The back tape 71 supports each element of the lead frame 40. This makes it possible to suppress deformation and displacement of each element. For example, it is possible to suppress the occurrence of resin burrs during molding.

[0060] In addition, solder (not shown) is applied to each mounting portion of the lead frame 40. For example, the solder is applied by printing. In the case of printing, it is preferable that the surface of the lead frame 40P is flat. For this reason, in this embodiment, a lead frame 40P is used that is formed by etching a flat metal plate. Etching makes it easy to form a lead frame 40 with a thick portion 40a and a thin portion 40b. Unnecessary portions of the flat metal plate are melted and removed by etching. The flat metal plate melts from above and below in the Z direction. At the penetration portion of the lead frame 40P, two approximately spherical cross sections are connected in the Z direction.

[0061] Next, the semiconductor elements 50 are arranged (step S20). The semiconductor elements 50 are prepared in parallel with the lead frames 40P. The semiconductor elements 50 are obtained by dicing a wafer that has undergone multiple manufacturing processes into individual pieces. The prepared semiconductor elements 50 are then arranged in predetermined positions on the lead frames 40, specifically, on the drain islands 41, as shown in FIG. 12. Semiconductor elements 501 and 502 are arranged on all of the lead frames 40. Solder is also applied to the source electrodes 52 of the semiconductor elements 50 arranged on the lead frames 40. For example, the solder is applied by printing.

[0062] Next, the clips 60 are placed (step S30). The clips 60 are prepared in parallel with the lead frames 40 and semiconductor elements 50. The prepared clips 60 are then placed so that one end overlaps the solder on the semiconductor element 50 and the other end overlaps a predetermined position on the lead frame 40, specifically the solder on the source island 42, as shown in FIG. 14. Clips 601 and 602 are placed for all of the lead frames 40.

[0063] Next, solder reflow is performed (step S40). This solder-bonds the semiconductor element 50 and the lead frame 40. The clip 60 and the lead frame 40 are solder-bonded. The clip 60 and the semiconductor element 50 are solder-bonded. Although not shown, after reflow, the pads 53 of the semiconductor element 50 and the signal terminals 46 are connected via the bonding wires 70 described above.

[0064] Next, the sealing body before singulation is molded (step S50). As shown in FIGS. 14 and 15, the sealing body 30P before singulation integrally seals elements for multiple products. With the upper and lower molds clamped together, resin is injected into the cavity to mold the sealing body 30P. The upper mold is configured to integrally cover the lead frame 40P except for the outer periphery. The wall surfaces that form the cavity of the lower mold are approximately flat. The sealing body 30P is molded with the back tape 71 placed in contact with the cavity wall surfaces of the lower mold.

[0065] After molding, the back tape 71 is peeled off, thereby exposing the underside of the thick portion 40a of the lead frame 40. Then, a plating film is applied to the exposed portion of the lead frame 40. For example, the plating film is formed by electroplating. This improves the reliability of the connection between the electronic device 20 and the substrate using solder.

[0066] Next, dicing is performed (step S60). As shown in FIG. 16 , the sealing body 30P is placed upside down in the Z direction compared to when it was formed, and the lead frame 40 is cut from the underside with a diamond cutter 72. The diamond cutter 72 is sometimes called a dicing cutter or a dicing saw. By dicing, the lead frame 40P is separated into individual lead frames 40 for each product. The sealing body 30P is separated into individual sealing bodies 30 for each product. In this way, the electronic device 20 is obtained.

[0067] FIG. 17 shows the cross-sectional shape of the lead frame 40. FIG. 17 shows the cross-section of the thin-walled portion 40b including the fusing portion 43 and the extension portion 44. FIG. 17 is an enlarged view of the fusing portion 43 and the extension portion 44 shown in FIG. 7. As described above, in this embodiment, the lead frame is singulated by dicing. Therefore, the end 44a of the extension portion 44 is a cut surface caused by dicing. The end 44a is substantially flush with the side surface 30c of the sealing body 30, which is a cut surface caused by dicing. In contrast, the side surface 43a of the fusing portion 43 is an etched surface. The etched surface has a shape similar to a part of a sphere. The side surface of the fusing portion 43, which is connected to the extension portion 44, also has a shape similar to the side surface 43a. The side surfaces of the extension portion 44, excluding the end 44a, also have a shape similar to the side surface 43a. As such, the surface condition of the end 44a of the extension portion 44 is significantly different from that of the side surface of the fusing portion 43. In addition, except for FIG. 17, the shape of the lead frame 40 is illustrated in a simplified form.

[0068] <Fusing Operation> Next, the fusing operation will be described with reference to Figs. 18 to 21. Fig. 18 is an enlarged plan view of the periphery of the fusing portion. Fig. 18 shows current concentration. Fig. 19 is a plan view showing the state where the molten portion flows out. Fig. 19 corresponds to Fig. 8. In Fig. 19, the molten portion is hatched for clarity. Fig. 20 is a diagram showing the state after the molten portion has flowed out. Fig. 20 corresponds to Fig. 2. Fig. 21 is a cross-sectional view showing the state after the molten portion has flowed out. Fig. 21 corresponds to Fig. 7.

[0069] As described above, the fusing portion 43 provides the function of breaking the electrical path. The fusing portion 43 generates heat when current is applied. When the temperature of the fusing portion 43 exceeds the melting point of the material that constitutes the fusing portion 43, the fusing portion 43 melts. In order to provide the breaking function, the fusing portion 43 has at least one of the following structures: a high resistance that makes it easy to generate heat; a low heat dissipation that makes it easy for heat to build up; and a structure that makes it easy for current to concentrate. The fusing portion 43 of this embodiment has the three structures described above.

[0070] Specifically, the thickness of the fusing portion 43 is approximately half the thickness of the thick portion 40a of the islands 41 and 42 due to half-etching. The fusing portion 43 extends along the longitudinal direction of the source island 421 and has a narrow width. Therefore, the resistance of the fusing portion 43 is high. The underside of the fusing portion 43 is covered by the sealing body 30, and the fusing portion 43 has poorer heat dissipation properties than the islands 41 and 42. Therefore, heat generated by current flow is trapped. In a plan view, the clip 601 extends in the Y direction, and the source island 421 and the fusing portion 43 extend in the X direction. When one of the semiconductor elements 501 and 502 shorts out and the other is turned on, the ground-fault current that flows bends at the junction between the clip 601 and the source island 421, as shown by the solid arrow in Figure 18, and the current concentrates at the fusing portion 43.

[0071] For example, when the ground-fault current is several hundred amperes, the temperature of fusing portion 43 exceeds 1,000°C in several tens of milliseconds. The temperature of fusing portion 43 exceeds the melting point of Cu, 1,085°C, and fusing portion 43 melts. Extension portion 44 is integrally formed continuous with fusing portion 43, and its temperature rises due to heat conduction from fusing portion 43. The temperature of extension portion 44 rises along with fusing portion 43. The temperature increase increases internal pressure, and fusing portion 43 and extension portion 44 attempt to exit sealing body 30 through outflow path 31. As the temperature further increases and fusing portion 43 and extension portion 44 melt, a molten portion 48 is pushed out of sealing body 30 through opening 31a of outflow path 31, as shown in FIG. 19 . The molten portion 48 is a portion of lead frame 40 that melts due to the overcurrent, and includes at least a portion of fusing portion 43 and extension portion 44. The molten portion 48 flows out of the sealing body 30, and the flow of current stops.

[0072] 20 and 21 , when the molten portion 48 flows out of the sealing body 30, the outflow path 31 becomes a cavity along its entire length, where the extension portion 44 is not disposed. As the fused portion 43 flows out, a cavity 32 originating from the fused portion 43 is formed in the sealing body 30. The cavity 32 is connected to the outflow path 31. The cavity 32 is provided between the source island 421 and the drain island 412, and electrically separates the source island 421 from the drain island 412. The source island 421 and the drain island 412 are disconnected.

[0073] Summary of the First Embodiment In the present embodiment, when the electronic device 20 provides one phase of the upper and lower arm circuits 10, if one of the arms 10H, 10L is short-circuited and the other arm is turned on, an overcurrent due to a ground fault will flow. Control is performed to prevent a malfunction of the normal arm, but if a malfunction still occurs, a complete power supply ground fault will occur, affecting other products and nearby circuits. The electronic device 20 of this embodiment includes a wiring member (lead frame 40) and an encapsulant 30 that encapsulates the wiring member. The wiring member has a fusing portion 43 extending in a predetermined direction (X direction). When an overcurrent flows, the fusing portion 43 melts and cuts off the electrical path. This prevents a malfunction of the normal arm.

[0074] The wiring member has an extension portion 44. The extension portion 44 is provided integrally and continuously with the fusing portion 43, and at least a portion of the extension portion 44 extends from the fusing portion 43 in a direction (Y direction) different from the predetermined direction. The extension portion 44 is configured to melt with heat generated by the fusing portion 43 when electricity is passed through it. The sealing body 30 is configured to include at least a portion that covers the outer peripheral surface of the extension portion 44, and has an outflow passage 31 that extends along the extension portion 44.

[0075] In this way, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts, and when the extension portion 44 melts, the outflow passage 31 functions as a passage for releasing the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. Therefore, the fusing portion 43, which melts when current is passed through it, can be released to the outside of the sealing body 30 without having to bring the mold for forming the sealing body 30 into contact with the fusing portion 43 to expose the fusing portion. The fusing portion 43 can exhibit the desired interruption characteristics without strict control over the dimensional accuracy of the wiring member and mold including the fusing portion 43, or the relative positional accuracy of the wiring member including the fusing portion 43 and the mold.

[0076] As illustrated in this embodiment, the terminal end 44a of the extension portion 44 and the fusion portion 43 may have different surface conditions. The terminal end 44a may be a cut surface. The terminal end 44a may be substantially flush with the outer surface of the sealing body 30. The outflow passage 31 may open to the side surface 30c of the sealing body 30. In this embodiment, the electronic device 20 is singulated by dicing. The wiring member is formed by etching. By dicing, the terminal end 44a is exposed from the sealing body 30 so as to be substantially flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The terminal end 44a is a cut surface formed by dicing, and the fusion portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of singulating. This simplifies the manufacturing process.

[0077] As exemplified in this embodiment, the cross-sectional area of ​​the extension portion 44 may be smaller than the cross-sectional area of ​​the fusion portion 43. The extension portion 44 is likely to melt due to heat generated in the fusion portion 43 by energization. Therefore, when the fusion portion 43 melts, the molten fusion portion 43 (melted portion 48) can be quickly released to the outside of the sealing body 30.

[0078] As exemplified in this embodiment, the wiring member may be a lead frame 40. The lead frame 40 allows for easy formation of the fusion portion 43 and the extension portion 44. For example, the thickness can be locally varied by etching to provide a cutoff function. For example, a portion of the suspension lead 45 can be used as the extension portion 44.

[0079] As exemplified in this embodiment, the electronic device 20 may include a semiconductor element 50. The lead frame 40 may have a drain island 41 (mounting portion) that is thicker than the fusing portion 43 and the extension portion 44 and to which the semiconductor element 50 is connected. The lower surface of the drain island 41 may be exposed from the sealing body 30, and the lower surfaces of the fusing portion 43 and the extension portion 44 may be covered by the sealing body 30. In this embodiment, half etching is performed to reduce the thickness of the thin portion 40b, which includes the fusing portion 43 and the extension portion 44, to approximately half the thickness of the thick portion 40a, which occupies the main part of the drain island 41. Heat generated by the semiconductor element 50 can be effectively dissipated while allowing the fusing portion 43 and the extension portion 44 to have their desired functions.

[0080] The outflow passage 31 may be provided substantially parallel to the lower surface of the drain island 41 exposed from the sealing body 30. The outflow passage 31 may extend substantially parallel to the lower surface of the drain island 41. This allows the outflow passage 31 to be provided substantially parallel to the substrate on which the electronic device 20 is mounted. Because the position of the outflow passage 31 is determined based on the substrate, it is easy to ensure an arrangement that facilitates the discharge of the molten portion 48.

[0081] Second Embodiment This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, all the islands mainly have thick portions. Alternatively, at least some of the source islands may have only thin portions.

[0082] FIG. 22 is a plan view of the electronic device according to this embodiment, as seen from the back surface side. FIG. 22 corresponds to FIG. 3. FIG. 23 is a cross-sectional view of the electronic device. FIG. 23 corresponds to FIG. 6. As shown in FIGS. 22 and 23, of the islands 41 and 42, the source island 421 has only the thin portion 40b. As in the preceding embodiment, the drain island 41 (411, 412) and the source island 422 mainly have the thick portion 40a. The thickness of the source island 421 is approximately half that of the thick portion 40a due to half-etching. The underside of the source island 421 is covered by the sealing body 30. The source island 421 is not exposed from the back surface 30b. The electronic device 20 does not have a source terminal S1. The fusing portion 43 electrically connects the source island 421 and the drain island 412 before shutoff. The other configurations are the same as those of the electronic device 20 described in the preceding embodiment.

[0083] Summary of Second Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the bottom surface of the drain island 41 is exposed from the sealing body 30, and the bottom surfaces of the fusing portion 43 and the extension portion 44 are covered by the sealing body 30. Therefore, even if the source island 421 is formed as the thin portion 40b, the desired functions of the fusing portion 43 and the extension portion 44 can be maintained, and heat generated by the semiconductor element 50 can be effectively dissipated.

[0084] Although the example in which the source island 421 is the thin portion 40b has been described, the present invention is not limited to this. For example, the source island 422 may be the thin portion 40b. Both the source island 421 and the source island 422 may be the thin portion 40b.

[0085] Third Embodiment This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device is configured to provide upper and lower arm circuits for one phase, i.e., an inverter. Instead of this, a semiconductor relay may be provided.

[0086] <Circuit Configuration of Electronic Device> FIG. 24 shows an equivalent circuit of an electronic device according to this embodiment. An electronic device 20 according to this embodiment provides a source-common type semiconductor relay 13 as shown in FIG. 24. Similar to the upper and lower arm circuits 10, the semiconductor relay 13 includes two MOSFETs connected in series. The semiconductor relay 13 has gate terminals G1 and G2, drain terminals D1 and D2, and source terminals S1 and S2 as external connection terminals. The gate terminal G1 is electrically connected to one gate electrode of the MOSFETs. The gate terminal G2 is electrically connected to another gate electrode of the MOSFETs. Hereinafter, the MOSFET connected to the gate terminal G1 may be referred to as MOSFET1, and the MOSFET connected to the gate terminal G2 may be referred to as MOSFET2.

[0087] The drain terminal D1 is electrically connected to the drain electrode of MOSFET 1. The source terminal S1 is electrically connected to the source electrode of MOSFET 1. The drain terminal D2 is electrically connected to the drain electrode of MOSFET 2. The source terminal S2 is electrically connected to the source electrode of MOSFET 2. The source electrodes of MOSFET 1 and MOSFET 2 are electrically connected to each other.

[0088] <Schematic Structure of Electronic Device> Fig. 25 is a plan view of the electronic device as seen from one side. Fig. 25 corresponds to Fig. 2. In Fig. 25, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 26 is a plan view of the electronic device as seen from the back side. Fig. 27 is a side view as seen from the Y4 direction shown in Fig. 25. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII shown in Fig. 25.

[0089] The electronic device 20 of this embodiment has a configuration similar to that shown in the preceding embodiment (first embodiment). The electronic device 20 includes a sealing body 30, a lead frame 40, a semiconductor element 50, and a clip 60. The lead frame 40 includes islands 41 and 42, a fusing portion 43, an extension portion 44, a suspension lead 45, a signal terminal 46, and a reinforcing terminal 47. The lead frame 40 includes a thick portion 40a and a thin portion 40b. Most of the islands 41 and 42, the signal terminal 46, and the reinforcing terminal 47 include the thick portion 40a. The fusing portion 43, the extension portion 44, and the suspension lead 45 include only the thin portion 40b. The entire upper surface of the lead frame 40 is covered by the sealing body 30. The lower surface of the thick portion 40a is exposed from the back surface 30b, and the lower surface of the thin portion 40b is covered by the sealing body 30. The thick portion 40a is exposed and is substantially flush with the rear surface 30b.

[0090] The drain islands 411 and 412 have a generally rectangular planar shape with the Y direction as the longitudinal direction. The drain islands 411 and 412 are aligned in the X direction so as to face each other over the entire length in the longitudinal direction. The source islands 421 and 422 have a generally rectangular planar shape with the X direction as the longitudinal direction. The source islands 421 and 422 are aligned in the X direction so as to face each other over the entire length in the lateral direction.

[0091] The fusing portion 43 is provided between the source islands 421 and 422. The fusing portion 43 is provided integrally and continuously with the source islands 421 and 422. The fusing portion 43 is provided at the portion connecting the source islands 421 and 422. The length in the Y direction of the fusing portion 43, i.e., the width, is approximately equal to the width of the source islands 421 and 422. The integrated structure including the source island 421, the fusing portion 43, and the source island 422 has a substantially I-shape in plan view.

[0092] The extension portion 44 is integrally formed continuous with the fusing portion 43, and extends in the Y direction for its entire length. The end 44a of the extension portion 44 is approximately flush with the side surface 30c and exposed from the sealing body 30. The end 44a is a cut surface created by dicing. The width of the extension portion 44 is narrower than the width of the fusing portion 43. The cross-sectional area of ​​the extension portion 44 is smaller than the cross-sectional area of ​​the fusing portion 43. The sealing body 30 has an outflow passage 31 that opens to the side surface 30c.

[0093] The suspension leads 45 are connected to the islands 41 and 42. The ends of the suspension leads 45 are exposed from the sealing body 30, approximately flush with the corresponding side surfaces 30c, 30d, 30e, and 30f. The signal terminal 46 corresponding to the above-mentioned MOSFET 1 is exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 corresponding to MOSFET 1 is connected to the drain island 411 in the X direction and is disposed between two suspension leads 45 exposed on the side surface 30d. The signal terminal 46 corresponding to MOSFET 2 is also exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 corresponding to MOSFET 2 is also exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 corresponding to MOSFET 2 is connected to the drain island 412 in the X direction and is disposed between two suspension leads 45 exposed on the side surface 30d. The reinforcing terminals 47 are provided at the four corners of the sealing body 30 in a plan view.

[0094] The semiconductor element 50 includes a semiconductor element 501 mounted on the drain island 411 and a semiconductor element 502 mounted on the drain island 412. The semiconductor element 501 provides MOSFET 1, and the semiconductor element 502 provides MOSFET 2. The semiconductor elements 501 and 502 are aligned in the X direction. The semiconductor elements 501 and 502 are arranged in the same direction. The semiconductor elements 501 and 502 are arranged so that the source electrode 52 is on the side surface 30c and the pad 53 is on the side surface 30d.

[0095] The clip 60 includes a clip 601 connected to the semiconductor element 501 and a clip 602 connected to the semiconductor element 502. The clips 601 and 602 extend in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 to the source island 421. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 to the source island 422. The other configurations are the same as those shown in the preceding embodiment (first embodiment).

[0096] Summary of the Third Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configuration described in the preceding embodiment (first embodiment). For example, the lead frame 40, which is a wiring member, has a fusing portion 43. When an overcurrent flows, the fusing portion 43 melts, interrupting the electrical path. This prevents a normal MOSFET from failing. Furthermore, the sealing body 30 has an outflow path 31 originating from the extension portion 44, formed by covering the extension portion 44. The outflow path 31 is blocked by the extension portion 44 before the extension portion 44 melts. When the extension portion 44 melts, the outflow path 31 functions as a path for releasing the molten fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. The fusing portion 43, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold for forming the sealing body 30 coming into contact with the fusing portion 43. The fusing portion 43 can exhibit desired interruption characteristics.

[0097] In this embodiment, as in the previous embodiment, the electronic device 20 is separated into individual pieces by dicing. The lead frame 40 is formed by etching. The terminal end 44a is a cut surface by dicing, and the fusing portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of separating the individual pieces. This simplifies the manufacturing process.

[0098] In this embodiment, similar to the preceding embodiment, the lower surface of the drain island 41 is exposed from the sealing body 30, and the lower surfaces of the fusing portion 43 and the extension portion 44 are covered by the sealing body 30. By half etching, the thickness of the thin portion 40b including the fusing portion 43 and the extension portion 44 is approximately half the thickness of the thick portion 40a that occupies the main part of the drain island 41. Therefore, the heat generated by the semiconductor element 50 can be effectively dissipated while the fusing portion 43 and the extension portion 44 are able to perform their desired functions.

[0099] The semiconductor relay 13 is not limited to a common-source type in which the source electrodes are connected in common. It may also be a common-drain type in which the drain electrodes are connected in common. As shown in the second embodiment, at least one of the source islands 421 and 422 may be the thin-walled portion 40b.

[0100] (Fourth Embodiment) This embodiment is a modification of the preceding embodiment as a basic form, and the description of the preceding embodiment can be used. In the preceding embodiment, the lead frame is a wiring member having a fusing portion. Instead, the clip may be a wiring member having a fusing portion.

[0101] Fig. 29 is a plan view of the electronic device as seen from one side. Fig. 29 corresponds to Fig. 25. In Fig. 29, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 30 is a side view as seen from the Y5 direction shown in Fig. 29. Fig. 31 is a cross-sectional view taken along line XXXI-XXXI shown in Fig. 29.

[0102] The electronic device 20 of this embodiment provides a common-source semiconductor relay 13, similar to the configuration shown in the preceding embodiment (third embodiment). The electronic device 20 of this embodiment differs from the third embodiment in that a fusing portion 63 and an extension portion 64 are provided on a clip 60. The lead frame 40 does not have a fusing portion 43 or an extension portion 44. The source islands 421 and 422 are aligned in the X direction with a predetermined gap between them.

[0103] The fusing portion 63 is provided between the clips 601 and 602. The fusing portion 63 is provided integrally and continuously with the clips 601 and 602. The fusing portion 63 is provided at the portion connecting the clips 601 and 602. The fusing portion 63 extends in the X direction. One end of the fusing portion 63 is connected to the clip 601, and the other end is connected to the clip 602. The length, i.e., width, of the fusing portion 63 in the Y direction is shorter than the length (width) of the clips 601 and 602 in the X direction. The integrated structure including the clip 601, the fusing portion 63, and the clip 602 forms a substantially C-shaped (approximately U-shaped) planar shape. In the clip 60, the clip 601 is sometimes referred to as the first clip portion, and the clip 602 is sometimes referred to as the second clip portion.

[0104] The extension portion 64 is integrally formed and continuous with the fusing portion 63. At least a portion of the extension portion 64 extends from the end of the extension portion 64 on the fusing portion 63 side in a direction different from the X direction in which the fusing portion 63 extends. In this embodiment, the extension portion 64 extends in the Y direction over its entire length. One of the ends of the extension portion 64 is continuous with the fusing portion 63. The other end of the extension portion 64, a terminal end 64a, is exposed outside the sealing body 30 and is substantially flush with the side surface 30c. The terminal end 64a is a cut surface formed by dicing. The side surface of the fusing portion 63 is an etched surface. As shown in FIG. 30 , the terminal end 64a is located farther from the back surface 30b than the lead frame 40, i.e., higher up. The fusing portion 63 and the extension portion 64 are located farther from the substrate in the Z direction than the lead frame 40.

[0105] The length in the X direction of the extension portion 64, i.e., the width, is shorter than the length (width) in the Y direction of the fusing portion 63. The cross-sectional area of ​​the extension portion 64 is smaller than the cross-sectional area of ​​the fusing portion 63. The extension portion 64 melts when it receives heat generated by the fusing portion 63 when electricity is applied. In the example shown in Figure 29, one extension portion 64 is connected to the fusing portion 63.

[0106] The clip 60 is formed by, for example, etching. The clip 60 has locally varying thicknesses. The clip 60 has a thick portion 60a and a thin portion 60b that is thinner than the thick portion 60a. By half-etching, the thin portion 60b has approximately half the thickness of the thick portion 60a. In the clip 60, the portion surrounded by the dashed dotted line in FIG. 29 is the thick portion 60a, and the portion excluding the thick portion 60a is the thin portion 60b. The thick portion 60a is provided at the joint with the source electrode 52 and at the joint with the source islands 421 and 422. The fusing portion 63 and the extension portion 64 have only the thin portion 60b.

[0107] The sealing body 30 has an outflow passage 31. The outflow passage 31 is configured to include at least a portion that covers the outer peripheral surface of the extension portion 64. The outflow passage 31 extends along the extension portion 64 and opens to the outer surface of the sealing body 30. In this embodiment, the outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 that extends in the Y direction. The sealing body 30 has an opening 31a of the outflow passage 31 on its side surface 30c.

[0108] The outflow passage 31 is a hollow portion that has a cross-sectional area substantially equal to the cross-sectional area of ​​the extension portion 64, extends from the fusion portion 63 in the Y direction, and opens to the side surface 30c. Before the extension portion 64 melts, at least a portion of the outflow passage 31 is blocked by the extension portion 64. In this embodiment, almost the entire outflow passage 31 is blocked by the extension portion 64. As described above, the plug 30 has the outflow passage 31 derived from the extension portion 64, which is formed by covering the extension portion 64. The outflow passage 31 is provided substantially parallel to the lower surfaces (exposed surfaces) of the islands 41, 42 exposed from the plug 30.

[0109] The fusing portion 63 functions to interrupt an electrical path. When the temperature of the fusing portion 63 exceeds the melting point of the material that constitutes the fusing portion 63, the fusing portion 63 melts. Similar to the fusing portion 43, the fusing portion 63 has at least one of the following structures: a high resistance that makes it easy to generate heat; a low heat dissipation that makes it easy for heat to build up; and a structure that makes it easy for current to concentrate. The fusing portion 63 of this embodiment has the three structures described above.

[0110] Specifically, the thickness of the fusion portion 63 is approximately half the thickness of the joint portion (thick portion 60a) due to half-etching. The width of the fusion portion 63 is narrower than the width of the clips 601 and 602. Therefore, the resistance value of the fusion portion 63 is high. The underside of the fusion portion 63 is covered by the sealing body 30, which traps heat generated by current flow. In a plan view, the clip 601 extends in the Y direction, and the fusion portion 63 extends in the X direction. When one of the semiconductor elements 501 and 502 shorts out and the other is turned on, the overcurrent that flows is bent between the clip 601 and the fusion portion 63. Therefore, current concentrates in the fusion portion 63.

[0111] Although not shown, when the fusion portion 63 and the extension portion 64 melt, the fusion portion is pushed out of the sealing body 30 through the opening 31a of the outflow passage 31. The fusion portion is a portion of the clip 60 that melts due to an overcurrent, and includes at least a portion of the fusion portion 63 and the extension portion 64. When the fusion portion flows out of the sealing body 30, the current stops. When the fusion portion flows out of the sealing body 30, the outflow passage 31 becomes hollow along its entire length, with the extension portion 64 not being located therein. When the fusion portion 63 flows out, a hollow portion originating from the fusion portion 63 is formed in the sealing body 30. The hollow portion electrically isolates the clips 601 and 602. Other configurations are similar to those described in the preceding embodiment. For example, the electronic device 20 can be obtained by the manufacturing method described in the preceding embodiment (first embodiment).

[0112] Summary of the Fourth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the clip 60, which is a wiring member, has a fusing portion 63. When an overcurrent flows, the fusing portion 63 melts, cutting off the electrical path. This prevents a normal semiconductor element 50 from failing. Furthermore, the sealing body 30 has an outflow passage 31 formed by covering the extension portion 64 and originating from the extension portion 64. The extension portion 64 blocks the outflow passage 31 before melting and releases the blocked state when melted. The fusing portion 63, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold used to form the sealing body 30 coming into contact with the fusing portion 63. The fusing portion 63 can exhibit desired interruption characteristics.

[0113] In this embodiment, the surface conditions of the terminal end 64a of the extension portion 64 and the fusion portion 63 are different. The terminal end 64a is a cut surface. The terminal end 64a is substantially flush with the outer surface of the sealing body 30. The outflow passage 31 opens to the outer surface of the sealing body 30. More specifically, the electronic device 20 is singulated by dicing. The clip 60 is formed by etching. By dicing, the terminal end 64a is exposed from the sealing body 30, substantially flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The terminal end 64a is a cut surface formed by dicing, and the fusion portion 63 is an etched surface. The extension portion 64 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of singulating. This simplifies the manufacturing process.

[0114] In this embodiment, the clip 60 is provided with a fusion portion 63 and an extension portion 64. The fusion portion 63 and the extension portion 64 are positioned higher than the lead frame 40, with respect to the lower surfaces of the islands 41, 42 exposed from the back surface 30b of the sealing body 30. When the electronic device 20 is mounted on the board, the fusion portion 63 and the extension portion 64 are spaced apart from the conductor pattern of the board. This reduces the heat dissipation of the fusion portion 63 and the extension portion 64. In other words, the temperature of the fusion portion 63 and the extension portion 64 can be easily increased.

[0115] The clip 60 may be mounted as a single component, or may be mounted as a clip frame similar to the lead frame 40. The clip frame has clips 60 for multiple products. The clip frame may be collectively sealed with the sealing body 30P and then separated into individual pieces by dicing. While an example in which the clip 60 is formed by etching has been shown, this is not limiting. For example, the clip 60 may be formed by pressing and rolling.

[0116] In the electronic device 20 that provides the upper and lower arm circuits 10, the clip 60 may be provided with the fusion portion 63 and the extension portion 64. For example, in the configuration shown in FIG. 2 , the fusion portion 63 and the extension portion 64 may be provided on the clip 601 instead of the fusion portion 43 and the extension portion 44.

[0117] Fifth Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device has a 2-in-1 package structure. Alternatively, the electronic device may have a 1-in-1 package structure.

[0118] Fig. 32 is a plan view of an electronic device according to this embodiment as seen from one side. Fig. 32 corresponds to Fig. 29. In Fig. 32, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 33 is a side view as seen from the X1 direction shown in Fig. 32. Fig. 34 is a cross-sectional view taken along line XXXIV-XXXIV shown in Fig. 32.

[0119] The electronic device 20 of this embodiment has a 1-in-1 package structure. The electronic device 20 may provide, for example, one of the arms, i.e., the upper arm 10H or the lower arm 10L, in the upper and lower arm circuit 10 for one phase. The electronic device 20 may also provide one of the MOSFETs forming a series circuit in the source common type semiconductor relay 13.

[0120] The electronic device 20 includes one semiconductor element 50 and one clip 60. The lead frame 40 includes one island 41 and one island 42. The drain island 41 and the source island 42 are aligned in the Y direction. The semiconductor element 50 is mounted on the drain island 41. The clip 60 extends in the Y direction in a plan view. One end of the clip 60 is connected to the source electrode 52, and the other end is connected to the source island 42.

[0121] The clip 60 has a fusion portion 63 and an extension portion 64. The fusion portion 63 is provided between the connection portions 61 and 62. The fusion portion 63 is provided at a portion connecting the connection portions 61 and 62. The fusion portion 63 extends in the Y direction. The extension portion 64 extends in the X direction from a side surface of the fusion portion 63. An end 64a of the extension portion 64 is exposed outside the sealing body 30, approximately flush with the side surface 30f. The clip 60 is formed by etching. The end 64a is a cut surface formed by dicing, and the side surface of the fusion portion 63 is an etched surface. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the X direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30f. The other configurations are similar to those described in the preceding embodiment.

[0122] Summary of Fifth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, by dicing, the terminal end 64a is exposed from the sealing body 30 so as to be substantially flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The terminal end 64a is a cut surface produced by dicing, and the fusing portion 63 is an etched surface. The extension portion 64 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of singulating. This simplifies the manufacturing process.

[0123] Furthermore, since the clip 60 is provided with the fusion portion 63 and the extension portion 64, it is possible to reduce the heat dissipation properties of the fusion portion 63 and the extension portion 64. In other words, it is possible to make it easier for the temperature of the fusion portion 63 and the extension portion 64 to rise.

[0124] Sixth Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the outflow passage opens on the side surface of the sealing body. Instead, the outflow passage may open on the back surface of the sealing body.

[0125] Fig. 35 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 35 corresponds to Fig. 25. In Fig. 35, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 36 is a plan view of the electronic device as seen from the back side. Fig. 37 is a cross-sectional view taken along line XXXVII-XXXVII shown in Fig. 35. Fig. 37 shows the electronic device mounted on a substrate.

[0126] The electronic device 20 of this embodiment provides a source-common type semiconductor relay 13, similar to the electronic device 20 shown in FIG. 25 . The lead frame 40 has a fusing portion 43 and an extension portion 44. The fusing portion 43 has a width narrower than the source islands 421, 422. The extension portion 44 extends in the Z direction from the lower surface of the fusing portion 43. An end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the rear surface 30b. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Z direction. The outflow passage 31 opens to the rear surface 30b. The sealing body 30 has an opening 31a of the outflow passage 31 on the rear surface 30b.

[0127] As an example, the extension portion 44 has a substantially circular planar shape. The planar shape of the extension portion 44 is not particularly limited. For example, it may be a substantially rectangular shape. As shown in FIG. 37 , the electronic device 20 is mounted on, for example, a substrate 80. The substrate 80 is a so-called printed circuit board. The substrate 80 has an insulating substrate 81 and a conductor pattern 82. The conductor pattern 82 is arranged on at least the surface of the insulating substrate 81 facing the electronic device 20. The conductor pattern 82 may be arranged in multiple layers on the insulating substrate 81. The islands 41 and 42 are connected to the corresponding conductor patterns 82 via a bonding material 83 such as solder. The signal terminals 46 and the reinforcing terminals 47 are also connected to the corresponding conductor patterns 82 via the bonding material 83.

[0128] When an overcurrent flows and melts the fusing portion 43 and the extension portion 44, the melted portion flows out from the opening 31a on the back surface 30b. Therefore, it is preferable to connect the electronic device 20 to the substrate 80 so that the opening 31a is not blocked by the bonding material 83. This allows the melted portion to escape to the outside of the sealing body 30. Furthermore, it is possible to prevent the fusing portion 43 from being thermally connected to the conductor pattern 82 via the bonding material 83 and the extension portion 44. In other words, it is possible to prevent the heat generated by the fusing portion 43 from being transferred to the conductor pattern 82, thereby preventing the fusing portion 43 and the extension portion 44 from being inhibited from melting.

[0129] The electronic device 20 described above can be formed by the manufacturing method described in the preceding embodiment. When preparing the lead frame 40P, the portion where the extension portion 44 continues directly below the fusing portion 43 is etched to form the thick portion 40a. Then, with the back tape 71 attached to the rear surface of the lead frame 40P, the molding of the sealing body 30P is carried out. After molding, the back tape 71 is peeled off. This results in the end 44a being exposed in a substantially flush relationship with the rear surface 30b, and the outflow passage 31 opening to the rear surface 30b. Furthermore, because a plating film is applied to the exposed portion of the lead frame 40 after the back tape 71 is peeled off, the surface condition of the end 44a differs from the surface (etched surface) of the fusing portion 43. Other configurations are similar to those described in the preceding embodiment.

[0130] Summary of the Sixth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, formed by covering the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the back surface 30b of the sealing body 30. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts. When the extension portion 44 melts, the outflow passage 31 functions as a passage for releasing the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. Therefore, the fusing portion 43, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold for forming the sealing body 30 coming into contact with the fusing portion 43. The fusing portion 43 can exhibit desired interruption characteristics.

[0131] Although the example in which the electronic device 20 provides the semiconductor relay 13 has been described, the present invention is not limited to this. For example, in the electronic device 20 that provides the upper and lower arm circuits 10, the lead frame 40 may be provided with an extension portion 44 that extends in the Z direction from the fusing portion 43 and is exposed substantially flush with the back surface 30b.

[0132] Seventh Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the outflow passage opens to the side or rear surface of the sealing body. Instead, the outflow passage may open to one surface of the sealing body.

[0133] Fig. 38 is a plan view of an electronic device according to this embodiment as seen from one side. Fig. 38 corresponds to Fig. 32. In Fig. 38, the sealing body is shown transparently in order to show the portion covered by the sealing body, as in Fig. 2. Fig. 39 is a cross-sectional view taken along line XXXIX-XXXIX shown in Fig. 38.

[0134] The electronic device 20 of this embodiment has a 1-in-1 package structure similar to the electronic device 20 shown in FIG. 32 . The clip 60 has a fusion portion 63 and an extension portion 64. The fusion portion 63 has a width narrower than the connection portions 61 and 62. The extension portion 64 extends in the Z direction from the upper surface of the fusion portion 63. An end 64a of the extension portion 64 is exposed from the sealing body 30, approximately flush with the one surface 30a. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the Z direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the one surface 30a. The other configurations are similar to those described in the preceding embodiment.

[0135] Summary of the Seventh Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 64, formed by covering the extension portion 64. The outflow passage 31 extends along the extension portion 64 and opens to one surface 30a of the sealing body 30. The outflow passage 31 is blocked by the extension portion 64 before the extension portion 64 melts. When the extension portion 64 melts, the outflow passage 31 functions as a passage for releasing the melted fusing portion 63 and extension portion 64 to the outside of the sealing body 30. Therefore, the fusing portion 63, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold for forming the sealing body 30 coming into contact with the fusing portion 63. The fusing portion 63 can exhibit desired interruption characteristics.

[0136] Although the electronic device 20 has a 1-in-1 package structure in the above example, the electronic device 20 is not limited to this. For example, in a 2-in-1 package structure, the clip 60 may be provided with an extension portion 64 that extends in the Z direction from the fusion portion 63 and is exposed to the surface 30 a in a substantially flush manner.

[0137] Eighth Embodiment This embodiment is a modification of the preceding embodiment as a basic form, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device provided one system. Instead of this, the electronic device may provide multiple systems.

[0138] Fig. 40 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 40 corresponds to Fig. 2. In Fig. 40, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 41 is a plan view of the electronic device as seen from the back side. Fig. 41 corresponds to Fig. 3.

[0139] The electronic device 20 of this embodiment has a 4-in-1 package structure. The electronic device 20 provides two systems of upper and lower arm circuits 10. The electronic device 20 includes four semiconductor elements 50. A semiconductor element 501 constitutes the upper arm 10H of the first system, and a semiconductor element 502 constitutes the lower arm 10L of the first system. A semiconductor element 503 constitutes the upper arm 10H of the second system, and a semiconductor element 504 constitutes the lower arm 10L of the second system. The semiconductor elements 501 and 503 on the upper arm 10H side are aligned in the X direction, and the semiconductor elements 502 and 504 on the lower arm 10L side are aligned in the X direction. The semiconductor elements 501 and 502 of the first system are aligned in the Y direction. The semiconductor elements 503 and 504 of the second system are aligned in the Y direction.

[0140] The lead frame 40 has islands 41 and 42. Similar to the previous embodiment, most of the islands 41 and 42 are thick portions 40a. The drain island 41 includes four drain islands 411, 412, 413, and 414. A semiconductor element 501 is mounted on the drain island 411, and a semiconductor element 502 is mounted on the drain island 412. A semiconductor element 503 is mounted on the drain island 413, and a semiconductor element 504 is mounted on the drain island 414. The drain islands 411 and 413 on the upper arm 10H side are aligned in the X direction. The drain islands 411 and 413, which are at the same potential, are provided continuously and integrally. The drain islands 412 and 414 on the lower arm 10L side are aligned in the X direction.

[0141] The source island 42 includes four source islands 421, 422, 423, and 424. The first system of islands 411, 412, 421, and 422 are arranged in the Y direction in the order of drain island 411, source island 421, drain island 412, and source island 422. The second system of islands 413, 414, 423, and 424 are arranged in the Y direction in the order of drain island 413, source island 423, drain island 414, and source island 424.

[0142] The clip 60 includes four clips 601, 602, 603, and 604 that are individually provided. Each clip 60 extends in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 to the source island 421. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 to the source island 422. The clip 603 electrically connects the source electrode 52 of the semiconductor element 503 to the source island 423. The clip 604 electrically connects the source electrode 52 of the semiconductor element 504 to the source island 424.

[0143] The lead frame 40 has a fusing portion 43 and an extension portion 44. The fusing portion 43 and the extension portion 44 are thin-walled portions 40b, as in the previous embodiment. The fusing portion 43 and the extension portion 44 are provided for each system. The fusing portion 43 of the first system is provided between the source island 421 and the drain island 412. The fusing portion 43 extends in the Y direction. The extension portion 44 extends in the X direction from the side surface of the fusing portion 43. The end 44a of the extension portion 44 is exposed and approximately flush with the side surface 30e. The fusing portion 43 of the second system is provided between the source island 423 and the drain island 414. The fusing portion 43 extends in the Y direction. The extension portion 44 extends in the X direction from the side surface of the fusing portion 43. The end 44a of the extension portion 44 is exposed and approximately flush with the side surface 30f. The ends 44a are all cut surfaces formed by dicing.

[0144] The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the X direction. The sealing body 30 has a first system of outflow passages 31 that opens to the side surface 30e and a second system of outflow passages 31 that opens to the side surface 30f. The other configurations are the same as those described in the preceding embodiment.

[0145] Summary of the Eighth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. In this embodiment, when an abnormality occurs in the upper and lower arm circuits 10 of the first system and an overcurrent flows, the fusing portion 43 and the extension portion 44 of the first system melt. The melted portion flows out of the seal 30 from the side surface 30e through the outflow passage 31 of the first system. When an abnormality occurs in the upper and lower arm circuits 10 of the second system and an overcurrent flows, the fusing portion 43 and the extension portion 44 of the second system melt. The melted portion flows out of the seal 30 from the side surface 30f through the outflow passage 31 of the second system. In this way, the electrical path of the system in which the abnormality occurs can be cut off. For example, when applied to a vehicle, only the faulty system can be isolated by cutting off, allowing the vehicle to limp home using the normal system.

[0146] Furthermore, the extensions 44 and the outflow passages 31 for the multiple systems are formed by utilizing the process of molding the sealing body and the process of dividing the sealing body into individual pieces, thereby simplifying the manufacturing process.

[0147] The electronic device 20 providing multiple systems is not limited to a 4-in-1 package structure. For example, it may be a 6-in-1 package structure providing three systems. Although an example has been shown in which all of the outflow passages 31 for the multiple systems open to the side surfaces of the sealing body 30, this is not limiting. At least one of the outflow passages 31 may open to the rear surface 30b or the one surface 30a. For example, one of the outflow passages 31 may open to the side surface and the other may open to the rear surface 30b.

[0148] Ninth Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the fusing portion and the extension portion and the portion of the wiring member other than the fusing portion and the extension portion are integrally formed using the same material. Alternatively, the fusing portion and the extension portion may be formed using a material different from that of the portion of the wiring member other than the fusing portion and the extension portion.

[0149] Fig. 42 is a plan view of an electronic device according to this embodiment as seen from one side. Fig. 42 corresponds to Fig. 2. In Fig. 42, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 43 is a side view as seen from the Y6 direction shown in Fig. 42. Fig. 44 is a cross-sectional view taken along line XLIV-XLIV shown in Fig. 42.

[0150] The electronic device 20 of this embodiment has substantially the same structure as the electronic device 20 shown in FIG. 2 . The difference is that the fusing portion 43 and the extension portion 44 are integrally formed by joining with the remaining portions of the lead frame 40 excluding the fusing portion 43 and the extension portion 44. The fusing portion 43 and the extension portion 44 are formed as a continuous, integral part. The fusing portion 43 and the extension portion 44 are formed as a single member using a common material. The fusing portion 43 and the extension portion 44 are formed using a metal material with a lower melting point than the remaining portions of the lead frame 40. The fusing portion 43 and the extension portion 44 are formed using, for example, an Al (aluminum)-based material. The remaining portions of the lead frame 40 are formed using a Cu-based material.

[0151] 2, the extension portion 44 extends in the Y direction from the side surface of the fusing portion 43. An end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the side surface 30c. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c. The fusing portion 43 and the extension portion 44 are positioned farther from the underside of the islands 41, 42 exposed from the back surface 30b of the sealing body 30 than other parts of the lead frame 40. The other configurations are similar to those described in the preceding embodiment.

[0152] Summary of the Ninth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. Furthermore, in this embodiment, the fusing portion 43 and the extension portion 44 are formed using a material with a lower melting point than the rest of the lead frame 40 excluding the fusing portion 43 and the extension portion 44. This makes it easier for the fusing portion 63 and the extension portion 64 to increase in temperature. In other words, when an overcurrent flows, the fusing portion 63 and the extension portion 64 can be melted quickly.

[0153] In this embodiment, the fusing portion 43 and the extension portion 44 are positioned higher than other portions of the lead frame 40, with respect to the lower surfaces of the islands 41 and 42 exposed from the back surface 30b of the sealing body 30. When the electronic device 20 is mounted on the board, the fusing portion 43 and the extension portion 44 are spaced apart from the conductor pattern of the board. This reduces the heat dissipation of the fusing portion 43 and the extension portion 44. In other words, the temperature of the fusing portion 43 and the extension portion 44 can be easily increased.

[0154] Although an example has been shown in which the fusing portion 43 and the extension portion 44 of the lead frame 40 are formed using a material with a low melting point, this is not limiting. The fusing portion 63 and the extension portion 64 of the clip 60 may be formed using a material with a lower melting point than the portions of the clip 60 excluding the fusing portion 63 and the extension portion 64. Furthermore, instead of a material with a low melting point, a material with a high electrical resistivity may be used. For example, the fusing portion 43 and the extension portion 44 may be formed using a material with a higher electrical resistivity than the portions of the lead frame 40 excluding the fusing portion 43 and the extension portion 44. The fusing portion 63 and the extension portion 64 may be formed using a material with a higher electrical resistivity than the portions of the clip 60 excluding the fusing portion 63 and the extension portion 64.

[0155] Tenth Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the end of the extension portion is a cut surface formed by dancing. Instead, the end of the extension portion may be a cut surface formed by press cutting.

[0156] Fig. 45 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 45 corresponds to Fig. 2. In Fig. 45, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 46 is a plan view as seen from the back side. Fig. 46 corresponds to Fig. 3.

[0157] The electronic device 20 of this embodiment has almost the same structure as the electronic device 20 shown in FIG. 2 . The difference is that the electronic device 20 is separated into individual pieces by press cutting. The extension portion 44 extends outward beyond the side surface 30 c. The terminal end 44 a is located outward beyond the side surface. The terminal end 44 a is a cut surface formed by press cutting. Like the extension portion 44, the suspension lead 45 also extends outward beyond the corresponding side surfaces 30 c, 30 c, 30 e, and 30 f. The terminal end of the suspension lead 45 is also a cut surface formed by press cutting.

[0158] The signal terminals 46 and the reinforcing terminals 47 are also press-cut in the same manner as the extension portions 44. The signal terminals 46 extend outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f. The reinforcing terminals 47 extend outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f.

[0159] The electronic device 20 described above can be formed by utilizing the manufacturing method described in the preceding embodiment. The differences are the molding process and singulation process of the sealing body 30P. The sealing body 30P is molded to seal each product. The sealing body 30P has multiple sealing bodies 30 that are separated from each other. Press cutting is used instead of dicing for singulation. This makes it possible to obtain an electronic device 20 with terminals protruding from the side surfaces 30c, 30d, 30e, and 30f of the sealing body 30. The other configurations are the same as those described in the preceding embodiment.

[0160] Summary of the Tenth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the end 44a of the extension portion 44 and the fusion portion 43 have different surface conditions. The end 44a is a cut surface. The outflow passage 31 opens to the side surface 30c of the sealing body 30. The extension portion 44 extends to the outside of the sealing body 30 through the opening 31a of the outflow passage 31. The end 44a is a cut surface formed by press cutting, and the fusion portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of singulating. This simplifies the manufacturing process.

[0161] The electronic device 20 is not limited to a flat package in which the lead frame 40 is exposed and substantially flush with the rear surface 30b. The shape of the exposed terminals is not particularly limited. A package structure in which gull-wing type terminals protrude, such as a QFP package, may also be used. QFP is an abbreviation for Quad Flat Package.

[0162] Eleventh Embodiment This embodiment is a modification of the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the extension portion protrudes from the side surface by press cutting. Instead, the extension portion may be pulled out after press cutting, so that the end of the extension portion is positioned midway along the outflow passage.

[0163] Fig. 47 is a plan view of an electronic device according to this embodiment as seen from one side. Fig. 47 corresponds to Fig. 45. In Fig. 47, as in Fig. 2, the sealing body is shown transparently to show the portion covered by the sealing body. Fig. 48 is a cross-sectional view taken along line XLVIII-XLVIII shown in Fig. 47.

[0164] The electronic device 20 of this embodiment has almost the same structure as the electronic device 20 shown in Fig. 45. The difference is that by performing pulling after press cutting, the end 44a of the extension portion 44 is located midway in the outflow passage 31. A part of the extension portion 44 is removed by the pulling, and the remaining part becomes the extension portion 44 of the electronic device 20. The end 44a is a fracture surface caused by the pulling.

[0165] The outflow passage 31 is formed when the sealing body 30P is molded, i.e., before extraction. The outflow passage 31 is formed to reflect the extension portion 44 before extraction, and opens to the side surface 30c. The hanging lead 45 is not subjected to the extraction process. The hanging lead 45 extends outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f. The end of the hanging lead 45 is a cut surface formed by press cutting. The other configurations are the same as those described in the preceding embodiment.

[0166] Summary of Eleventh Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, formed by covering the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the side surface 30c of the sealing body 30. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts. When the extension portion 44 melts, the outflow passage 31 functions as a passage for releasing the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. Therefore, the fusing portion 43, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold for forming the sealing body 30 coming into contact with the fusing portion 43. The fusing portion 43 can exhibit desired interruption characteristics.

[0167] Furthermore, the end 44a of the extension portion 44 is a fracture surface and is located midway through the outflow passage 31. Such an extension portion 44 is formed by drawing after press cutting. The length of the extension portion 44 can be shortened while maintaining the outflow passage 31. In other words, the extension portion 44 is made more likely to melt, and the molten fusing portion 43 can be quickly released to the outside of the sealing body 30. Even if the extension portion 44 breaks at the boundary between the extension portion 44 and the fusing portion 43 during drawing, a minute protrusion shape is created on the fracture surface due to the tensile force. In other words, at least a portion of the end 44a is located midway through the outflow passage 31.

[0168] Twelfth Embodiment This embodiment is a modification of the preceding embodiment as a basic form, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device includes a semiconductor element. Alternatively, the electronic device may not include a semiconductor element. Alternatively, the electronic device may include only a wiring member and a sealing body.

[0169] Fig. 49 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 49 corresponds to Fig. 2. In Fig. 49, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 50 is a plan view of the electronic device as seen from the back side. Fig. 50 corresponds to Fig. 3. Fig. 51 is a side view as seen from the Y7 direction shown in Fig. 49. Fig. 52 is a cross-sectional view taken along line LII-LII shown in Fig. 49.

[0170] The electronic device 20 of this embodiment provides a fuse. The electronic device 20 includes only a sealing body 30 and a lead frame 40, which is a wiring member. The sealing body 30, like the previous embodiment, has a generally rectangular planar shape. The sealing body 30 has one surface 30a, a back surface 30b, and side surfaces 30c, 30d, 30e, and 30f. The lead frame 40, like the previous embodiment, is formed by, for example, etching. The lead frame 40 has a thick portion 40a and a thin portion 40b. The entire upper surface of the lead frame 40 is covered by the sealing body 30. The lower surface of the thick portion 40a of the lead frame 40 is exposed and generally flush with the back surface 30b, and the lower surface of the thin portion 40b is covered by the sealing body 30.

[0171] The lead frame 40 has a fusing portion 43, an extension portion 44, and a terminal portion 49. The terminal portion 49 is provided at both ends of the fusing portion 43 in the X direction, which is the extension direction of the fusing portion 43. The majority of the terminal portion 49 is the thick portion 40a. The terminal portion 49 is exposed from the back surface 30b and is connected to the substrate. The thin portion 40b is provided on a portion of the outer periphery of the terminal portion 49 in a plan view. Note that the two-dot chain line shown in FIG. 49 indicates the boundary between the thick portion 40a and the thin portion 40b. Because the terminal portion 49 has the thick portion 40a and the thin portion 40b, the anchor effect can prevent it from coming off the sealing body 30. The fusing portion 43 and the extension portion 44 only have the thin portion 40b.

[0172] The extension portion 44 extends in the Y direction from the side surface of the fusing portion 43. The end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the side surface 30c. The end 44a is a cut surface created by dicing. The outflow path 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The sealing body 30 has an opening 31a of the outflow path 31 on the side surface 30c. The outflow path 31 extends approximately parallel to the lower surface of the terminal portion 49 exposed from the sealing body 30. The electronic device 20 described above can be obtained by preparing a lead frame 40P, molding the sealing body 30P, and then dicing it.

[0173] Summary of the Twelfth Embodiment The electronic device 20 of this embodiment also achieves the same effects as the configurations described in the preceding embodiments. For example, when an overcurrent flows, the fusing portion 43 melts, thereby interrupting the electrical path. Furthermore, the lead frame 40 has an extension portion 44. The sealing body 30 has an outflow path 31 derived from the extension portion 44, formed by covering the extension portion 44. The outflow path 31 is blocked by the extension portion 44 before the extension portion 44 melts. When the extension portion 44 melts, the outflow path 31 functions as a path for releasing the melted fusing portion 43 and extension portion 44 to the outside of the sealing body 30. Therefore, the fusing portion 43, which melts when current is applied, can escape to the outside of the sealing body 30 without the mold for forming the sealing body 30 coming into contact with the fusing portion 43. The fusing portion 43 can exhibit desired interruption characteristics.

[0174] In this embodiment, the electronic device 20 is separated into individual pieces by dicing. The lead frame 40 is formed by etching. As a result of dicing, the terminal end 44a is exposed from the sealing body 30, approximately flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The terminal end 44a is a cut surface caused by dicing, and the fusing portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing the process of molding the sealing body and the process of separating the individual pieces. This simplifies the manufacturing process.

[0175] Although an example of the electronic device 20 separated by dicing has been shown, the present invention is not limited to this. The electronic device 20 may be separated by press cutting, or may be separated by pulling out a part of the extension portion 44 after press cutting.

[0176] Thirteenth Embodiment This embodiment is a modification of the preceding embodiment as a basic configuration, and the description of the preceding embodiment can be used. In this embodiment, various configurations of the extension portion 44 that can be adopted by the electronic device 20 will be described.

[0177] FIG. 53 is a cross-sectional view showing an example of an extension portion in an electronic device according to this embodiment. FIGS. 54 and 55 are cross-sectional views showing other examples of the extension portion. FIGS. 53 to 55 are cross-sectional views along the XY plane. For convenience, FIGS. 53 to 55 show only the fusing portion and the extension portion of the lead frame. The fusing portion and the extension portion are hatched. In each figure, (a) shows dicing cut, (b) shows press cut, and (c) shows extraction after press cut. In all examples, the exposed interface of the fusing portion is not formed by a molding die for the sealing body, making manufacturing easy.

[0178] FIG. 53 shows the configuration exemplified in the preceding embodiment. The extension portion 44 has a predetermined width, i.e., a predetermined cross-sectional area, and extends in the Y direction. The outflow passage 31 extends in the Y direction and opens to the side surface 30c. In FIG. 53(a), the end 44a is exposed and approximately flush with the side surface 30c due to dicing cuts. In FIG. 53(b), the end 44a is positioned outside the side surface 30c due to press cuts. Press sagging and the like occurs on the cut surface of the end 44a. In FIG. 53(c), the end 44a becomes a fractured surface due to pulling after press cuts. In the preceding embodiment, the fractured surface is shown in a simplified form. The end 44a is positioned midway along the outflow passage 31.

[0179] In FIG. 54 , the extension portion 44 is provided so that its width increases as it approaches the side surface 30c. This results in a tapered shape for the outflow passage 31. The angle θ is the angle between the side surface 30c and the side surface of the extension portion 44 in a plan view. In other words, it is the angle between the side surface 30c and the wall surface (sidewall) of the outflow passage 31 in a plan view. The angle θ is sometimes referred to as the taper angle. In the example shown in FIG. 53 , the angle θ is approximately 90 degrees. In the example shown in FIG. 54 , the angle θ is greater than 90 degrees. In FIG. 54 ( a ), the extension portion 44 increases in width as it approaches the side surface 30c and terminates approximately flush with the side surface 30c. In FIG. 54 ( b ), the extension portion 44 increases in width as it approaches the side surface 30c and extends in the Y direction with a constant width outside the side surface 30c. In FIG. 54( c ), the extension 44 terminates midway through the tapered outflow passage 31 .

[0180] In Figure 55, a through hole 440 or a recess 441 resulting from the through hole 440 is provided near the end of the extension portion 44. In Figures 55(a) and 55(b), a through hole 440 is provided near the end of the extension portion 44 in the configuration shown in Figure 53. In Figure 55(c), for example, the extension portion 44 shown in Figure 55(b) is pulled out and broken at the through hole 440. The end 44a of the extension portion 44 is located midway through the outflow passage 31. The end 44a includes a recess 441 resulting from the through hole 440. The portion of the end 44a excluding the recess 441 is a broken surface.

[0181] Summary of the Thirteenth Embodiment As shown in this embodiment, in a configuration in which the outflow passage 31 extends in one direction (Y direction), it is preferable that the angle θ between the outer surface (side surface 30c) of the sealing body 30 and the wall surface of the outflow passage 31 be 90 degrees or greater. More preferably, the angle θ is greater than 90 degrees. This makes it easier to perform extraction. In other words, it is easier to form the extension portion 44 in which the end 44a is a fracture surface and is located midway along the outflow passage 31. It is also easier to allow the molten fusing portion 43 and extension portion 44 to escape to the outside of the side surface 30c through the outflow passage 31.

[0182] By providing the through-hole 440 shown in FIG. 55 or a non-through cutout (not shown), the extension portion 44 can be pulled out at a predetermined position in the outflow passage 31. In other words, it is possible to easily form the extension portion 44 in such a form that the terminal end 44a is a fracture surface and is located in the outflow passage 31. Furthermore, the amount of the extension portion 44 can be reduced by the amount of the through-hole 440 or the cutout. This makes it easier for the molten fusing portion 43 and extension portion 44 to escape to the outside of the side surface 30c through the outflow passage 31.

[0183] (Other Embodiments) The disclosure in this specification and drawings, etc. is not limited to the exemplified embodiments. The disclosure encompasses the exemplified embodiments and modifications thereto by those skilled in the art. For example, the disclosure is not limited to the combinations of parts and / or elements shown in the embodiments. The disclosure can be implemented in various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure encompasses the omission of parts and / or elements from the embodiments. The disclosure encompasses the substitution or combination of parts and / or elements between one embodiment and another embodiment. The disclosed technical scope is not limited to the description of the embodiments. Some disclosed technical scopes are defined by the claims, and should be interpreted as including all modifications within the meaning and scope equivalent to the claims.

[0184] The disclosure in the specification, drawings, etc. is not limited by the claims. The disclosure in the specification, drawings, etc. encompasses the technical ideas described in the claims, and extends to more diverse and broader technical ideas than the technical ideas described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification, drawings, etc. without being bound by the claims.

[0185] When an element or layer is referred to as being "on," "coupled," "connected," or "coupled," it may be directly on, coupled, connected, or coupled to another element or layer, and intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly coupled," "directly connected," or "directly coupled" to another element or layer, there are no intervening elements or layers present. Other language used to describe relationships between elements should be construed in a similar manner (e.g., "between" vs. "directly between," "adjacent" vs. "directly adjacent," etc.). As used in this specification, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0186] Spatially relative terms such as "inside," "outside," "back," "below," "low," "top," "top," and the like are used herein to facilitate the description of one element or feature's relationship to other elements or features, as illustrated. Spatially relative terms may be intended to encompass different orientations of the device during use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures were turned over, elements described as "below" or "directly below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "bottom" can encompass both an orientation of top and bottom. The device may also be oriented in other ways (rotated 90 degrees or at other orientations), and the spatially relative descriptors used in this specification would be interpreted accordingly.

[0187] (Disclosure of Technical Ideas) This specification discloses multiple technical ideas described in the following multiple clauses. Some clauses may be described in a multiple dependent form, with the subsequent clause alternatively referring to the preceding clause. Furthermore, some clauses may be described in a multiple dependent form, with the subsequent clause referring to another multiple dependent clause. These multiple dependent clauses define multiple technical ideas.

[0188] <Technical Idea 1> An electronic device comprising: a wiring member (40, 60) having a fusing portion (43, 63) extending in a predetermined direction; and a sealing body (30) sealing the wiring member, wherein the wiring member is provided integrally and continuously with the fusing portion, at least a portion of which extends from the fusing portion in a direction different from the predetermined direction, and has an extension portion (44, 64) that melts with heat generated in the fusing portion when electricity is passed through it, and the sealing body is configured to include at least a portion that covers the outer peripheral surface of the extension portion, and has an outflow passage (31) that extends along the extension portion and opens to the outer surface of the sealing body, for allowing the fusing portion and the extension portion that melt when electricity is passed through to escape to the outside of the sealing body.

[0189] <Technical Concept 2> The electronic device according to Technical Concept 1, wherein the terminal end (44a) of the extension portion and the fusing portion have different surface states.

[0190] <Technical Concept 3> The electronic device according to Technical Concept 2, wherein the end is a cut surface.

[0191] Technical Concept 4: The electronic device according to Technical Concept 3, wherein the termination is flush with the outer surface of the encapsulant.

[0192] Technical Concept 5 The electronic device according to Technical Concept 3, wherein the extension portion extends to the outside of the sealing body through the opening of the outflow passage.

[0193] Technical Concept 6: The electronic device according to Technical Concept 2, wherein the end is a fractured surface and is located midway along the outflow passage.

[0194] <Technical Idea 7> The electronic device according to any one of Technical Ideas 1 to 6, wherein the sealing body has one surface (30a), a back surface (30b) that is the surface opposite to the one surface in the thickness direction of the fusing portion, and side surfaces (30c, 30e, 30f) that are continuous with the one surface and the back surface, and the outflow passage opens to the side surfaces.

[0195] <Technical Concept 8> The electronic device according to any one of Technical Concepts 1 to 7, wherein a cross-sectional area of ​​the extension portion is smaller than a cross-sectional area of ​​the fusing portion.

[0196] <Technical Idea 9> The electronic device according to any one of Technical Ideas 1 to 8, wherein the outflow passage extends in one direction, and an angle formed between the outer surface of the sealing body and a wall surface of the outflow passage is 90 degrees or more.

[0197] <Technical Concept 10> The electronic device according to any one of Technical Concepts 1 to 9, wherein the wiring member is a lead frame (40).

[0198] <Technical Idea 11> An electronic device according to Technical Idea 10, comprising: a semiconductor element (50) sealed in the sealing body; the lead frame having a mounting portion (41) that is thicker than the fusing portion and the extension portion and to which the semiconductor element is connected; a lower surface of the mounting portion, which is the surface opposite to the connection surface of the semiconductor element, is exposed from the sealing body; and lower surfaces of the fusing portion and the extension portion are covered by the sealing body.

[0199] Technical Concept 12 The electronic device according to Technical Concept 11, wherein the outflow passage is provided parallel to the lower surface of the mounting portion exposed from the sealing body.

[0200] <Technical Idea 13> An electronic device according to any one of Technical Ideas 1 to 9, comprising: a semiconductor element (50); and a circuit element (40) separate from the wiring member and the semiconductor element, wherein the sealing body seals the semiconductor element and the circuit element together with the wiring member, and the wiring member is a clip (60) that electrically connects the semiconductor element and the circuit element.

[0201] <Technical Concept 14> The electronic device according to any one of Technical Concepts 11 to 13, further comprising a plurality of the semiconductor elements so as to provide a plurality of systems, and the wiring member has the fusing portion for each of the systems.

[0202] <Technical Idea 15> The electronic device according to any one of Technical Ideas 1 to 14, wherein the fusing portion and the extension portion are formed using a material having a lower melting point than a portion of the wiring member excluding the fusing portion and the extension portion, or a material having a higher electrical resistivity than a portion of the wiring member excluding the fusing portion and the extension portion.

Claims

1. An electronic device comprising: a wiring member (40, 60) having a fusion portion (43, 63) extending in a predetermined direction; and a sealing body (30) that seals the wiring member, wherein the wiring member is integrally formed continuous with the fusion portion, at least a portion of which extends from the fusion portion in a direction different from the predetermined direction, and has an extension portion (44, 64) that melts with heat generated in the fusion portion when electricity is passed through it, and the sealing body is configured to include at least a portion that covers the outer peripheral surface of the extension portion, and has an outflow passage (31) that extends along the extension portion and opens into the outer surface of the sealing body, and allows the fusion portion and the extension portion that melt when electricity is passed through them to escape to the outside of the sealing body.

2. The electronic device according to claim 1, wherein the end (44a) of the extension portion and the fusion portion have different surface conditions.

3. The electronic device of claim 2, wherein the termination is a cut surface.

4. The electronic device of claim 3, wherein said termination is flush with said outer surface of said encapsulant.

5. The electronic device according to claim 3, wherein the extension portion extends to the outside of the sealing body through the opening of the outlet passage.

6. The electronic device of claim 2, wherein the termination is a broken surface and is located midway along the outlet passage.

7. The electronic device described in claim 2, wherein the sealing body has one surface (30a), a back surface (30b) which is the surface opposite to the one surface in the thickness direction of the fusion portion, and side surfaces (30c, 30e, 30f) connected to the one surface and the back surface, and the outflow passage opens to the side surface.

8. The electronic device according to claim 7, wherein a cross-sectional area of ​​the extension portion is smaller than a cross-sectional area of ​​the fusing portion.

9. The electronic device according to claim 7, wherein the outflow passage extends in one direction, and an angle between the outer surface of the sealing body and a wall surface of the outflow passage is 90 degrees or more.

10. The electronic device according to claim 7, wherein the wiring member is a lead frame (40).

11. The electronic device according to claim 10, comprising a semiconductor element (50) sealed in the sealing body, the lead frame having a mounting portion (41) thicker than the fusion portion and the extension portion and to which the semiconductor element is connected, the underside of the mounting portion opposite the connection surface of the semiconductor element being exposed from the sealing body, and the undersides of the fusion portion and the extension portion being covered by the sealing body.

12. The electronic device according to claim 11, wherein the outflow passage is provided parallel to the lower surface of the mounting portion exposed from the sealing body.

13. The electronic device according to claim 7, comprising: a semiconductor element (50); and a circuit element (40) separate from the wiring member and the semiconductor element, the encapsulant encapsulating the semiconductor element and the circuit element together with the wiring member, and the wiring member being a clip (60) that electrically connects the semiconductor element and the circuit element.

14. The electronic device according to any one of claims 11 to 13, further comprising a plurality of the semiconductor elements so as to provide a plurality of systems, and the wiring member has the fusing portion for each of the systems.

15. The electronic device of claim 1, wherein the fusing portion and the extension portion are formed using a material having a lower melting point than a portion of the wiring member excluding the fusing portion and the extension portion, or a material having a higher electrical resistivity than a portion of the wiring member excluding the fusing portion and the extension portion.

Images