Tantalum carbide composite material and method for manufacturing tantalum carbide composite material

Abstract

Disclosed are a tantalum carbide composite material and a method for manufacturing the tantalum carbide composite material. The tantalum carbide composite material comprises: a substrate; a buffer layer deposited on the entire surface of the substrate; and a tantalum carbide layer deposited on the upper surface of the buffer layer.

Description

Tantalum carbide composite material and method for manufacturing tantalum carbide composite material

[0001] The present disclosure relates to a tantalum carbide composite material and a method for manufacturing the tantalum carbide composite material according to embodiments.

[0002] Susceptor components used in semiconductor manufacturing equipment have the problem of the carbon material being etched by corrosive gases if the carbon material used in the existing semiconductor process is used as is, so components with silicon carbide (SiC) or tantalum carbide (TaC) coated on the surface of the carbon material structure are being used.

[0003] Tantalum carbide (TaC) composite materials, which are made by coating tantalum carbide (TaC) on the surface of carbon materials, generate stress due to the difference in thermal expansion coefficients between the carbon material and the tantalum carbide film, which causes problems such as cracks, warping, and peeling, and affects the damage and lifespan of the parts to which they are applied.

[0004] Parts coated with tantalum carbide (TaC) utilize a tantalum carbide composite material in which tantalum carbide (TaC) is coated on the surface of a carbon material. However, problems such as warping, cracking, and delamination can occur due to thermal stress caused by differences in thermal expansion coefficients between the carbon substrate and tantalum carbide. Therefore, the development of a buffer layer to relieve thermal stress between the carbon substrate and the tantalum carbide film is necessary.

[0005] In order to solve the above-mentioned problem, according to one embodiment, the present disclosure can provide a tantalum carbide composite material suitable for stress relaxation between a substrate and a tantalum carbide film (e.g., a tantalum carbide coating layer) and a method for manufacturing the tantalum carbide composite material by introducing a buffer layer for stress relaxation.

[0006] According to one embodiment, a buffer layer for stress relief between a substrate and a tantalum carbide film is introduced to reduce the stress between the tantalum carbide film and the carbon substrate, and a tantalum carbide composite material in which warpage, cracking, peeling, etc. are mitigated can be provided.

[0007] According to one embodiment, an application of a tantalum carbide composite material suitable for stress relief and introducing a buffer layer for stress relief according to embodiments of the present disclosure can be provided. According to one embodiment, a component for semiconductor manufacturing can be provided, which includes a tantalum carbide composite material suitable for stress relief and introducing a buffer layer for stress relief according to embodiments of the present disclosure, and which can improve the life stability and the stability and process efficiency of a semiconductor manufacturing process.

[0008] However, the problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0009] According to embodiments of the present disclosure, a tantalum carbide composite material may include a substrate; a buffer layer deposited on the substrate; and a tantalum carbide layer deposited on an upper surface of the buffer layer.

[0010] According to one embodiment, the buffer layer may include a material having a Van-der-Waals bond.

[0011] In one embodiment, the material of the van der Waals bond may include at least one or a combination of pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2.

[0012] According to one embodiment, the buffer layer may have different coefficients of thermal expansion in the transverse direction of the forming surface and in the vertical direction of the forming surface.

[0013] According to one embodiment, the coefficient of thermal expansion in the vertical direction of the forming surface in the buffer layer may be greater than the coefficient of thermal expansion in the transverse direction of the forming surface.

[0014] According to one embodiment, the coefficient of thermal expansion in the vertical direction of the formation surface of the buffer layer is about 6.0 x 10 -6 / K to about 7.0 x 10 -6 / K, and the coefficient of thermal expansion in the transverse direction of the buffer layer formation surface is about 0.2 x 10 -6 / K to about 0.7 x 10 -6 / K may be.

[0015] According to one embodiment, the coefficient of thermal expansion in the vertical direction of the formation surface in the buffer layer may satisfy at least one or all of the following conditions.

[0016] i) lower than the coefficient of thermal expansion of the above tantalum carbide layer;

[0017] ii) Higher than the coefficient of thermal expansion described above;

[0018] iii) Higher than the median value of the thermal expansion coefficient of the above-mentioned material and the above-mentioned tantalum carbide layer.

[0019] According to one embodiment, the thickness of the buffer layer may be from about 1 μm (micrometer) to about 100 μm (micrometer).

[0020] According to one embodiment, the thickness of the tantalum carbide layer may be from about 10 μm (micrometers) to about 100 μm (micrometers).

[0021] According to one embodiment, the buffer layer may be formed in a layered structure based on the upper surface of the substrate.

[0022] In one embodiment, the tantalum carbide layer may be crack-free. In one embodiment, the substrate may include at least one of graphene, graphite, or fullerene, or a combination thereof.

[0023] According to one embodiment, the warpage of the tantalum carbide composite material may be from about 10 μm (micrometers) to about 50 μm (micrometers).

[0024] According to one embodiment, the tantalum carbide layer may include cracks having a width of about 0.3 μm (micrometer) to about 0.6 μm (micrometer).

[0025] According to embodiments of the present disclosure, a method for manufacturing a tantalum carbide composite material includes the steps of preparing a substrate; forming a buffer layer on the substrate; and forming a tantalum carbide layer on the buffer layer; wherein the buffer layer includes a material having a van der Waals bond, and the buffer layer may be formed on at least one surface or the entire surface of the substrate.

[0026] According to one embodiment, the step of forming the tantalum carbide layer may be forming a film on the buffer layer.

[0027] According to one embodiment, the step of forming the buffer layer comprises about 1,500 About 1,900 The buffer layer may be deposited at a temperature of about 500 torr to about 900 torr and a pressure of about 500 torr to about 900 torr.

[0028] According to one embodiment, the step of forming the tantalum carbide layer comprises about 1,900 About 2,300 It may be possible to deposit a tantalum carbide film at a temperature of about 200 torr to about 400 torr and a pressure of about 200 torr to about 400 torr.

[0029] According to one embodiment, the step of forming the buffer layer and the step of forming the tantalum carbide layer may use a CVD process.

[0030] According to one embodiment, the step of forming the buffer layer may include forming a buffer layer including a material having a van der Waals bond, and the material having the van der Waals bond may include at least one of pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2, or a combination thereof.

[0031] According to one embodiment, the manufacturing method may be for manufacturing a tantalum carbide composite material according to embodiments of the present disclosure.

[0032] The present disclosure can provide a tantalum carbide composite material and a method for manufacturing the same, which reduce stress between a tantalum carbide film and a carbon substrate by introducing a buffer layer for stress relief between the substrate and the tantalum carbide film, and mitigate warpage, cracking, peeling, etc. The present disclosure can provide a component (e.g., a component for a plasma process) including a tantalum carbide composite material according to embodiments of the present disclosure.

[0033] FIG. 1a illustrates an example of a configuration of a tantalum carbide composite material having a tantalum carbide film formed on one surface of the substrate, according to one embodiment.

[0034] FIG. 1b illustrates an example of a composition of a tantalum carbide composite material having a tantalum carbide film deposited on a substrate according to one embodiment.

[0035] FIG. 2 illustrates, by way of example, the composition of the substrate and buffer layers in the tantalum carbide composite material of FIG. 1b, according to one embodiment.

[0036] FIG. 3 shows a cross-sectional SEM image of a tantalum carbide composite material, according to one embodiment.

[0037] FIG. 4a is an SEM image of the surface of a tantalum carbide layer in a tantalum carbide composite material according to one embodiment, and is an SEM image of Comparative Example 1.

[0038] FIG. 4b is an SEM image of the surface of a tantalum carbide layer in a tantalum carbide composite material according to one embodiment, and is an SEM image of Example 4.

[0039] FIG. 4c is an SEM image of the surface of a tantalum carbide layer in a tantalum carbide composite material according to one embodiment, which is an SEM image of Example 1.

[0040] FIG. 5 shows the width size of microcracks in a tantalum carbide composite material according to one embodiment.

[0041] FIG. 6 shows the warpage size of a tantalum carbide composite material according to one embodiment.

[0042] FIG. 7a schematically illustrates an example of a stress relaxation mechanism using a tantalum carbide composite material, according to one embodiment.

[0043] FIG. 7b schematically illustrates an example of a stress relaxation mechanism using a tantalum carbide composite material, according to one embodiment.

[0044] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing the present invention, detailed descriptions of related known functions or configurations will be omitted if it is determined that such detailed descriptions may unnecessarily obscure the gist of the present invention. In addition, the terms used in this specification are terms used to appropriately express preferred embodiments of the present invention, and may vary depending on the intention of the user or operator, or the customs of the field to which the present invention belongs. Therefore, the definitions of these terms should be determined based on the contents throughout this specification. The same reference numerals presented in each drawing represent the same elements.

[0045] Throughout the specification, when we say that an element is "on" another element, this includes not only cases where the element is in contact with the other element, but also cases where another element exists between the two elements.

[0046] Throughout the specification, when a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components.

[0047] Hereinafter, the tantalum carbide composite material and the method for manufacturing the tantalum carbide composite material of the present invention will be described in detail with reference to examples and drawings. However, the present invention is not limited to these examples and drawings.

[0048] According to one embodiment, FIGS. 1A and 1B exemplarily illustrate the composition of a tantalum carbide composite material, wherein in FIG. 1A, the tantalum carbide composite material includes a substrate (100); and a tantalum carbide layer (300), and may include a buffer layer (200) between the substrate (100) and the tantalum carbide layer (300).

[0049] According to one embodiment, the substrate (100) may be appropriately selected depending on the intended use of the tantalum carbide composite material. In some examples, the substrate (100) may be a carbon substrate considering the coefficient of thermal expansion of the tantalum carbide layer (300). In some examples, the substrate (100) may include graphene, graphite, fullerene, or a combination thereof. In some examples, the substrate (100) may be graphene or graphite.

[0050] According to one embodiment, the thickness of the substrate (100) may be from about 1 mm (millimeter) to about 10 mm (millimeter). In some examples, it may be from about 1 mm to about 10 mm; from about 1 mm to about 8 mm; from about 1 mm to about 6 mm; from about 1 mm to about 4 mm; or from about 1 mm to about 3 mm. In some examples, when the thickness of the substrate (100) is within the range mentioned, deformation of the substrate (100) after deposition of the tantalum carbide layer (300) can be minimized, and the life and process stability of a component using a tantalum carbide composite material introducing a buffer layer (200) can be improved.

[0051] According to one embodiment, the buffer layer (200) is formed on the substrate (100), and for example, the buffer layer (200) may be formed (e.g., deposited) on at least one side or at least a portion or the entire surface of the substrate (100). In some examples, referring to FIG. 1A, the buffer layer (200) may be formed on at least a portion or the entire surface of one side (e.g., a top surface or a bottom surface) of the substrate (100). In some examples, referring to FIG. 1B, the buffer layer (200) may be formed on at least a portion of the entire surface of the substrate (100) or the entire surface (e.g., a top surface, a bottom surface, and a side surface) surrounding the substrate (100).

[0052] According to one embodiment, the buffer layer (200) may include one or more types of materials having a Van der Waals bond. In some examples, the buffer layer (200) using a material having a Van der Waals bond can alleviate the difference in physical properties (e.g., stress due to a difference in thermal expansion coefficient) between the substrate (100) and the tantalum carbide layer (300). For example, the occurrence of cracks (e.g., warping) and peeling can be reduced by alleviating the stress due to a difference in thermal expansion coefficient between the substrate (100) and the tantalum carbide layer (300).

[0053] According to one embodiment, the material of the van der Waals bond may include at least one selected from the group consisting of pyrolytic carbon, BN (e.g., hexagonal boron nitride (h-BN)), MoS2, WSe2, ReS2, MoTe2, and combinations thereof. In some examples, the buffer layer (200) may include a layered structure having countless layers of van der Waals bonds (e.g., bonds perpendicular to the formation surface) based on the formation surface (or deposition surface) of the buffer layer (200) by applying a material of the van der Waals bond. When the formation surface expands in the transverse direction due to thermal expansion during the deposition process of TaC, the transverse bonds of the formation surface are not broken, but the vertical bonds of the formation surface are broken, causing internal peeling and interlayer sliding. That is, even if multiple internal delaminations occur within the interlayer structure, the interlayer slide due to the van der Waals bonding characteristics effectively expands in accordance with the expansion of TaC and can withstand the expansion of TaC (Figs. 7a and 7b).

[0054] According to one embodiment, a source material for forming (e.g., deposition) the material of the van der Waals bond may be used, and may be appropriately selected according to the forming process (e.g., deposition process). The source material may be appropriately selected according to the process in the form of a phase such as a gas, a solid (powder), etc. In some examples, the pyrolysis carbon in the example of the source material is a hydrocarbon (C x H y )(where x and y are natural numbers and x is 1 <x<6)에서 선택된 적어도 하나 이상을 포함하는 탄소계 물질을 열분해하여 형성된 것일 수 있다. 예를 들어, 탄화수소는 프로판(C3H8), 부탄(C4H 10), propylene (C3H6) or acetylene (C2H2) and combinations thereof. In some examples, the source materials may be, but are not limited to, BN source materials (e.g., B2H6 and / or NH3), MoS2 source materials (e.g., S powder and MoO2 powder), WSe2 source materials (e.g., WO3 powder and Se gas), ReS2 source materials (e.g., NH4ReO4(ammonium perrhenate)(precursor (solid)) and S gas), or MoTe2 source materials (e.g., Te powder + MoCl5 and MoO3 powder). For example, pyrolysis carbon may be about 1,100 About 2,000 ; about 1,300 About 2,000 ; about 1,400 About 2,000 ; about 1,500 About 1,900 ; about 1,600 About 1,900 ; or about 1,700 About 1,800 It may be a carbonaceous material produced by thermal decomposition of hydrocarbon gas at a temperature (e.g., deposition temperature, CVD deposition temperature, or heat treatment temperature). The process for forming the buffer layer of the present disclosure can be referred to in the manufacturing method process described below.

[0055] According to one embodiment, the thickness of the buffer layer (200) may be from about 1 μm to about 50 μm. In some examples, the thickness of the buffer layer may be from about 1 μm to about 5 μm; from about 1 μm to about 10 μm; from about 1 μm to about 15 μm; from about 1 μm to about 20 μm; from about 1 μm to about 25 μm; from about 1 μm to about 30 μm; from about 1 μm to about 35 μm; from about 1 μm to about 40 μm; from about 1 μm to about 45 μm; or from about 1 μm to about 50 μm. In some examples, the thickness of the buffer layer may be from about 2 μm to about 5 μm; from about 2 μm to about 10 μm; from about 2 μm to about 13 μm; from about 2 μm to about 17 μm; from about 2 μm to about 25 μm; It may be about 2 ㎛ to about 32 ㎛; about 2 ㎛ to about 41 ㎛; or about 2 ㎛ to about 48 ㎛. In some examples, it may be about 5 ㎛ to about 12 ㎛; 5 ㎛ to about 20 ㎛; about 5 ㎛ to about 23 ㎛; about 5 ㎛ to about 34 ㎛; or about 5 ㎛ to about 43 ㎛. In some examples, the thickness of the buffer layer within the above range reduces stress due to a difference in thermal expansion interface between the substrate (100) and the tantalum carbide layer (300), thereby preventing the occurrence of cracks, pinholes, etc. in the tantalum carbide film (300), and improving the lifespan and process stability of parts to which the tantalum carbide composite material is applied.

[0056] According to one embodiment, the tantalum carbide layer (300) may be formed on at least a portion or the entirety of the buffer layer (200) and may be formed as a single film. The single film may be a single layer or multiple layers.

[0057] According to one embodiment, the atomic ratio of Ta to C in the tantalum carbide layer (300) may be about 0.9 to about 1.34: about 1; about 0.1 to about 1.34: about 1; about 1.0 to about 1.34: about 1; about 1.1 to about 1.34: about 1; about 1.2 to about 1.34: about 1; or about 1.3 to about 1.34: about 1. By controlling the atomic ratio mentioned above, the surface energy of the tantalum carbide film is lowered to prevent adhesion of contaminants, prevent damage to the substrate (100) by plasma or corrosive gases in a process environment (e.g., a semiconductor manufacturing process), and improve the lifespan and process stability of a component to which the tantalum carbide composite is applied.

[0058] According to one embodiment, the tantalum carbide film (300) may be heat treated after synthesis and / or deposition (e.g., CVD deposition), for example, at 2,000 2,500 inland The temperature may be adjusted to an inert gas (e.g., Ar gas) atmosphere and the heat treatment may be performed for about 1 hour to about 20 hours; about 2 hours to about 20 hours; about 4 hours to about 20 hours; about 6 hours to about 20 hours; about 8 hours to about 18 hours; or about 8 hours to about 15 hours.

[0059] According to one embodiment, the tantalum carbide film (300) may have a thickness of about 10 μm (micrometers) to about 100 μm (micrometers). In some examples, the thickness may be about 10 μm to about 100 μm; about 10 μm to about 80 μm; about 10 μm to about 60 μm; about 10 μm to about 40 μm; or about 10 μm to about 20 μm.

[0060] According to one embodiment, the thickness ratio of the buffer layer (200) to the tantalum carbide film (300) may be about 0.1: about 1 to about 0.01: about 1. In some examples, the thickness ratio of the buffer layer (200) to the tantalum carbide film (300) may be preferably about 0.08: about 1 to about 0.05: about 1. In some examples, when the thickness ratio is within the mentioned range, the stress due to the difference in thermal expansion coefficient between the substrate (100) and the tantalum carbide layer (300) is reduced, thereby preventing the occurrence of cracks, pinholes, etc. in the tantalum carbide film (300), and improving the lifespan and process stability of parts to which the tantalum carbide composite material is applied.

[0061] According to one embodiment, the tantalum carbide film (300) may be crack-free or may include cracks on at least one of the surface, interior, or contact surface with the buffer layer (200) of the tantalum carbide film (300). In some examples, the tantalum carbide film (300) may include cracks on the surface. In some examples, the tantalum carbide film (300) may include microcracks having a width of about 0.3 μm (micrometer) to about 0.6 μm (micrometer). For example, the tantalum carbide film (300) may include microcracks having a width of about 0.3 μm to about 0.55 μm; about 0.3 μm to about 0.5 μm; about 0.3 μm to about 0.4 μm; or about 0.3 μm to about 0.35 μm. In some examples, the crack width refers to the width of a micro-crack generated in a carbon material including a tantalum carbide coating layer, and is the average of the values ​​obtained by observing the image of the crack area at 2000x magnification using an SEM analysis facility (e.g., SEM model name: JEOL, JSM-6390) and measuring the gap between cracks at 10 points in the vertical direction. In some examples, at least one of the surface, the inside, or the contact surface with the buffer layer of the tantalum carbide film (300) may be crack-free.

[0062] According to one embodiment, the coefficient of thermal expansion (CTE) of the substrate (100) is about 6 x 10 -6 / K or less; about 5 x 10 -6 / K or less; or about 4 x 10 -6 / K or less. In some examples, the coefficient of thermal expansion (CTE) of the substrate (100) is about 4 x 10 -6 / K to about 6 x 10 -6 / K may be.

[0063] According to one embodiment, among the coefficient of thermal expansion (CTE) (e.g., average coefficient of thermal expansion) of the buffer layer (200), the transverse coefficient of thermal expansion of the formation surface of the buffer layer (200) in FIGS. 1a and 1b is about 0.3 x 10 -6 / K Ideal and about 0.5 x 10 -6 / K or less, and the coefficient of thermal expansion in the vertical direction of the formation surface of the buffer layer (200) in FIG. 1a and FIG. 1b is about 6.0 x 10 6 / K or higher and about 7.0 x 10 -6 / K or less. According to one embodiment, the buffer layer (200) may have a bonding strength in the vertical direction of the formation surface due to van der Waals bonding that is weaker than the bonding strength in the transverse direction of the formation surface (e.g., covalent bonding), and even if the coefficient of thermal expansion of the buffer layer in the transverse direction of the formation surface is very low, when TaC expands in the transverse direction of the formation surface due to thermal expansion (e.g., expansion at high temperatures), the transverse bonding of the formation surface is not broken, but the vertical bonding of the formation surface is broken, and internal delamination (or multiple delamination) may occur, resulting in interlayer slide during van der Waals bonding (FIGS. 7A and 7B). That is, if the buffer layer (200) has a layered structure due to van der Waals bonding, it can effectively expand in accordance with the expansion of TaC through the internal interlayer slide in this layered structure.

[0064] According to one embodiment, the coefficient of thermal expansion in the vertical direction of the formation surface in the buffer layer (200) may satisfy at least one of the following conditions i), ii) and iii):

[0065] i) Lower than the thermal expansion coefficient of the tantalum carbide film (300);

[0066] ii) higher than the coefficient of thermal expansion of the substrate (e.g., substrate (100) of FIGS. 1a and 1b);

[0067] iii) Higher than the median value of the thermal expansion coefficient of the substrate (e.g., substrate (100) of FIGS. 1a and 1b) and the tantalum carbide film (300).

[0068] According to one embodiment, the ratio of the vertical thermal expansion coefficient of the forming surface to the transverse thermal expansion coefficient of the forming surface in the buffer layer (200) is about 1: about 1 (exceeding) to about 14; about 1: about 1 (exceeding) to about 14; about 1: about 1 (exceeding) to about 12; about 1: about 1 (exceeding) to about 10; about 1: about 1 (exceeding) to about 8; about 1: about 1 (exceeding) to about 5; about 1: about 1.1 to about 3; about 1: about 1.1 to about 2.5; about 1: about 1.1 to about 2.2; about 1: about 1.1 to about 2; about 1: about 1.1 to about 1.8; about 1: about 1.1 to about 1.6; About 1: about 1.1 to about 1.4; or about 1: about 1.1 to about 1.2.

[0069] According to one embodiment, the median value of the coefficient of thermal expansion in the vertical direction of the formation surface (e.g., b or d in FIGS. 1A and 1B) in the buffer layer (200) to the coefficient of thermal expansion of the substrate (100) and the tantalum carbide layer (300) may be about 1.1 to about 1.9: about 1; about 1.1 to about 1.8: about 1; about 1.1 to about 1.7: about 1; about 1.1 to about 1.5: about 1; about 1.1 to about 1.4: about 1; about 1.1 to about 1.3: about 1; about 1.1 to about 1.2: about 1; or 1: 1.2.

[0070] In this document, the vertical direction of the formation surface of the buffer layer (100) corresponds to the growth direction (or deposition direction) of the buffer layer on the substrate (100). Referring to FIGS. 1A and 1B, the vertical direction of the formation surface of the buffer layer in this document means the Z-axis direction of FIG. 1A, and in the case where the deposition layer is formed on the entire surface to surround the substrate (100) as in FIG. 1B, it means the vertical direction based on the formation surface (110, 120, 130, 140) of the buffer layer (200) of the substrate (100).

[0071] In this document, the transverse direction of the formation surface of the buffer layer may be the X-axis direction or the Y-axis direction in the case of Fig. 1a. In the case where the deposition layer is formed on the entire surface to surround the substrate (100) as in Fig. 1b, the transverse direction of the formation surface of the buffer layer means all directions parallel to each formation surface (110, 120, 130, 140) of the formation surface (110, 120, 130, 140) of the buffer layer (200) of the substrate (100) in Fig. 1b.

[0072] According to one embodiment, the coefficient of thermal expansion (CTE) (e.g., average coefficient of thermal expansion) of the tantalum carbide film (300) is about 6 x 10 -6 / K exceeds; approximately 7 x 10 -6 / K or more; or about 8 x 10 -6 / K or more. In some examples, the coefficient of thermal expansion (CTE) of the tantalum carbide film (300) is about 6 x 10 -6 / K exceeds about 7 x 10 -6 / K; about 6.1 x 10 -6 / K to about 7 x 10 -6 / K; or about 6.3 x 10 -6 / K to about 7 x 10 -6 / K may be.

[0073] According to one embodiment, the coefficient of thermal expansion is measured at room temperature to 1000 using a thermal expansion coefficient meter (DIL 402C). can be measured in. In this document, the coefficient of thermal expansion can mean the maximum, minimum, or average value.

[0074] According to one embodiment, the warpage of the tantalum carbide composite material may be from about 10 μm to about 50 μm. In some examples, the warpage may be from about 10 μm to about 50 μm; from about 10 μm to about 40 μm; from about 10 μm to about 30 μm; or from about 10 μm to about 20 μm. A method for measuring the warpage of the tantalum carbide composite material according to a preferred embodiment of the present disclosure comprises: (a) A step of manufacturing a 200 x 3 mm sized tantalum carbide coated product; and (b) a step of measuring the height of the product based on the upper half of a CMM (three-dimensional shape) measuring machine; and (c) a step of measuring 10 points at equal intervals at 0°, 60°, and 120° intervals; and a measurement method including expressing the deviation of the measured values ​​of a total of 30 points as warpage.

[0075] According to one embodiment, by controlling the difference in coefficient of thermal expansion (CTE) between the substrate (100) and the tantalum carbide layer (300), the substrate can be protected from extreme environments such as high temperature, plasma, and corrosive gas of a component (e.g., a semiconductor manufacturing component) to which the tantalum carbide composite material is applied (e.g., a component for a plasma process), and the service life and process stability of the component can be improved. In some examples, although there is a difference in coefficient of thermal expansion between the substrate (100) and the tantalum carbide layer (300), stress relaxation is induced by introducing the buffer layer (200), thereby preventing cracks, peeling, and the like of the tantalum carbide film (300), and the substrate can be protected from extreme environments such as high temperature, plasma, and corrosive gas of a component (e.g., a semiconductor manufacturing component) to which this is applied (e.g., a component for a plasma process), and the service life and process stability of the component can be improved.

[0076] According to one embodiment, a component comprising a tantalum carbide composite material of the present disclosure may be provided. For example, the tantalum carbide composite material may include the properties mentioned in the description of the tantalum carbide composite material mentioned above. For example, the component may be a component used in a semiconductor process. For example, the component may be a component of a single crystal SiC / AlN epitaxy and SiC / AlN growth process equipment.

[0077] According to one embodiment, FIG. 2 is a process flow diagram of a method for manufacturing a tantalum carbide composite material according to embodiments of the present disclosure. Referring to FIG. 2, the manufacturing method may include a step of preparing a substrate (410); a step of forming a buffer layer (420); and a step of forming a tantalum carbide layer (430).

[0078] According to one embodiment, the step of preparing a substrate (410) may prepare a substrate (e.g., substrate (100) of FIGS. 1a and 1b) mentioned in the description of the tantalum carbide composite material of the present disclosure (e.g., the tantalum carbide composite material of FIGS. 1a and 1b).

[0079] According to one embodiment, in the step of preparing a substrate (410), the prepared substrate (e.g., the substrate (100) of FIGS. 1A and 1B) may be loaded into a deposition chamber and evacuated to a vacuum state.

[0080] According to one embodiment, the step (420) of forming a buffer layer may be a step of forming a buffer layer (e.g., the buffer layer (200) of FIGS. 1A and 1B) on a substrate (e.g., the substrate (100) of FIGS. 1A and 1B). According to one embodiment, the buffer layer (e.g., the buffer layer (200) of FIGS. 1A and 1B) may be formed on at least a portion of at least one side or the entire surface of the substrate (e.g., the substrate (100) of FIGS. 1A and 1B). According to one embodiment, the buffer layer (e.g., the buffer layer (200) of FIGS. 1A and 1B) may be formed on at least a portion or the entire surface of the substrate (e.g., the substrate (100) of FIGS. 1A and 1B). Preferably, the buffer layer (e.g., the buffer layer (200) of FIGS. 1A and 1B) may be formed on the substrate (e.g., the substrate (100) of FIGS. 1A and 1B). It can be formed as a single film on the entire surface of the substrate (100). In some examples, the buffer layer (e.g., the buffer layer (200) of FIGS. 1A and 1B) can be a single layer or multiple layers.

[0081] According to one embodiment, the step (420) of forming a buffer layer is about 1,100 About 2,000 ; about 1,300 About 2,000 ; about 1,400 About 2,000 ; about 1,500 About 1,900 ; about 1,600 About 1,900 ; or about 1,700 About 1,900 The buffer layer can be deposited at a temperature (e.g., deposition temperature, CVD deposition temperature, or heat treatment temperature) and a pressure of about 400 torr to about 1,000 torr; about 500 torr to about 1,000 torr; or about 500 torr to about 900 torr.

[0082] According to one embodiment, the step (420) of forming a buffer layer may deposit a buffer layer by supplying a raw material for depositing the buffer layer under the mentioned temperature and pressure conditions. In some examples, a raw material gas and a carrier gas may be supplied. In some examples, the raw material gas may be selected as a raw material gas suitable for deposition (e.g., CVD) depending on the composition of the buffer layer. For example, when the buffer layer is pyrolytic carbon, propane (C3H8), butane (C4H 10 ), propylene (C3H6), or acetylene (C2H2), or a combination thereof, and a buffer layer deposited with a carbonaceous material produced by thermally decomposing the hydrocarbon gas under the mentioned process conditions can be obtained. In some examples, the carrier gas can be selected from hydrogen (H2), argon, or nitrogen.

[0083] According to one embodiment, the step (420) of forming a buffer layer forms a buffer layer (e.g., the buffer layer (200) of FIG. 1a or 1b) including a material of van der Waals bonding, wherein the material of van der Waals bonding may include at least one of pyrolytic carbon, BN, MoS2, WSe2, ReS2, and MoTe2, or a combination thereof. According to one embodiment, the step (420) of forming a buffer layer uses a source material for forming (e.g., depositing) the material of van der Waals bonding, and may be appropriately selected according to a forming process (e.g., a deposition process). According to one embodiment, the source material may be appropriately selected according to a process in a phase such as a gas, a solid (powder), etc. In some examples, the pyrolytic carbon in the example of the source material is a hydrocarbon (C x H y )(where x and y are natural numbers and x is 1 <x<6)에서 선택된 적어도 하나 이상을 포함하는 탄소계 물질을 열분해하여 형성된 것일 수 있다. 예를 들어, 탄화수소는 프로판(C3H8), 부탄(C4H 10 ), propylene (C3H6) or acetylene (C2H2) and combinations thereof. In some embodiments, examples of the source materials may include, but are not limited to, BN source materials (e.g., B2H6 and / or NH3), MoS2 source materials (e.g., S powder and MoO2 powder), WSe2 source materials (e.g., WO3 powder and Se gas), ReS2 source materials (e.g., NH4ReO4(ammonium perrhenate)(precursor (solid)) and S gas), or MoTe2 source materials (e.g., Te powder + MoCl5 and MoO3 powder).

[0084] According to one embodiment, the step (420) of forming a tantalum carbide layer is to form a tantalum carbide film on a buffer layer (e.g., buffer layer (200) of FIGS. 1A and 1B), and may synthesize or deposit (e.g., CVD deposition) a tantalum carbide film (e.g., tantalum carbide film (300) of FIGS. 1A and 1B) on at least a portion or the entire buffer layer (e.g., buffer layer (200) of FIGS. 1A and 1B).

[0085] According to one embodiment, the step (420) of forming a tantalum carbide layer is about 1,800 About 2,300 ; about 1,900 About 2,300 ; or about 2,000 About 2,300 A tantalum carbide film (e.g., the tantalum carbide film (300) of FIGS. 1A and 1B) can be deposited at a temperature of about 200 torr to about 400 torr and a pressure of about 200 torr to about 400 torr. According to one embodiment, the step (420) of forming a tantalum carbide layer can deposit a tantalum carbide film by supplying a raw material for depositing a tantalum carbide film under the mentioned temperature and pressure conditions. In some examples, a raw material gas and a carrier gas can be supplied. In some examples, the raw material gas can be selected as a raw material gas suitable for a deposition process (e.g., CVD). In some examples, the raw material gas can be applied as a raw material known in the art of the present disclosure as long as it is a raw material for supplying Ta and C (carbon), and is not specifically mentioned in this document. In some examples, the atomic ratio of Ta to C in the raw material gas is about 0.9 to about 1.34: about 1; about 0.1 to about 1.34: about 1; about 1 to about 1.34: about 1; It may be about 1.1 to about 1.34: about 1. In some examples, the carrier gas may be selected from an inert gas.

[0086] According to one embodiment, after the step (430) of forming the tantalum carbide layer, cooling or heat treatment may be performed to room temperature (rt) or a temperature close to room temperature. For example, after the step (430) of forming the tantalum carbide layer, about 2,000 About 2,500 The heat treatment may be performed at a temperature, in an inert gas (e.g., Ar gas) atmosphere, and for about 1 hour to about 20 hours; about 2 hours to about 20 hours; about 4 hours to about 20 hours; about 6 hours to about 20 hours; about 8 hours to about 18 hours; or about 8 hours to about 15 hours. After the heat treatment, the heat treatment may be cooled to room temperature (rt) or a temperature close to room temperature.

[0087] According to one embodiment, the step of forming a buffer layer (420) and the step of forming a tantalum carbide layer (430) may utilize various deposition processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-assisted chemical vapor deposition, and sputtering, and preferably, a CVD process may be utilized to form a material layer for stress relief.

[0088] The numerical ranges described herein may be expressed or interpreted as being less than, greater than, less than, and / or greater than a specific value within the range, as long as they do not depart from the purpose and scope of the present invention. The phrase "at least one or more" described herein may mean one or a mixture of two or more.

[0089] Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples are intended only to illustrate the present invention, and the scope of the present invention is not limited to the following examples.

[0090] Example 1

[0091] The coefficient of thermal expansion of the graphite substrate is 4.5 x 10 -6 / K and a pyrolytic carbon (PyC) layer was deposited on the substrate with a thickness of 5 ㎛ using a CVD deposition method, and then a TaC layer was formed on the pyrolytic carbon (PyC) layer using a CVD deposition method.

[0092] Example 2

[0093] The coefficient of thermal expansion of the graphite substrate is 4.5 x 10 -6 / K and a pyrolytic carbon (PyC) layer was deposited on the substrate with a thickness of 15 ㎛ using a CVD deposition method, and then a TaC layer was formed on the pyrolytic carbon (PyC) layer using a CVD deposition method.

[0094] Example 3

[0095] The coefficient of thermal expansion of the graphite substrate is 4.5 x 10 -6 / K and a pyrolytic carbon (PyC) layer was deposited on the substrate with a thickness of 25 ㎛ using a CVD deposition method, and then a TaC layer was formed on the pyrolytic carbon (PyC) layer using a CVD deposition method.

[0096] Example 4

[0097] The coefficient of thermal expansion of the graphite substrate is 5.5 x 10 -6 / K and a pyrolytic carbon layer was deposited on the substrate with a thickness of 5 ㎛ using the CVD deposition method, and then a TaC layer was formed on the pyrolytic carbon (PyC) layer using the CVD deposition method.

[0098] Comparative Example 1

[0099] A TaC composite was manufactured using the same method as in Example 1 except that the buffer layer was not formed.

[0100] Comparative Example 2

[0101] A TaC composite was manufactured in the same manner as in Example 4 except that the buffer layer was not formed.

[0102] The cross-sectional observation of the TaC composite manufactured in Example 1 was performed by measuring an SEM (Scanning Electron Microscope) image. The results are shown in Fig. 3. In Fig. 3, it can be confirmed that a pyrolytic carbon layer / TaC layer was formed on the graphite substrate. In addition, the TaC composite manufactured in Example 1 has a deposition layer formed on the entire surface of the substrate and buffer layer, as shown in Fig. 1a.

[0103] Example deposition process

[0104] A graphite substrate was placed in the deposition chamber, and after vacuuming for 1 to 20 hours, a pyrolytic carbon (PyC) layer was deposited. That is, the temperature was raised to 1,700 , a pyrolytic carbon (PyC) layer was deposited while supplying raw material C3H8 as the first carrier gas H2 under process pressure of 400 torr and atmospheric gas N2 conditions. Next, the temperature was raised to 2,100 TaC was deposited while supplying raw material Ta with second carrier gases Ar and CH4 under conditions of a process pressure of 400 torr. After the deposition process, it was cooled to room temperature.

[0105] Comparative example deposition process

[0106] A graphite substrate is loaded into the deposition chamber, and after vacuuming for 1 to 20 hours, the temperature is raised to 2,100 TaC was deposited while supplying raw material Ta with second carrier gases Ar and CH4 under conditions of a process pressure of 400 torr. After the deposition process, it was cooled to room temperature.

[0107] Surface microstructure analysis

[0108] The surface microstructure of TaC manufactured in the examples and comparative examples was observed using SEM, and the results for crack width are shown in Figs. 4a, 4b, 4c, and Table 1.

[0109] Comparison Example 1 Comparison Example 2 Example 1 Example 2 Example 3 Example 4 Coefficient of thermal expansion of the substrate 4.5 x 10 -6 / K5.5 x 10 -6 / K4.5 x 10 -6 / K4.5 x 10 -6 / K4.5 x 10 -6 / K5.5 x 10 -6 / KBuffer layer None None Yes Yes Yes Yes Thickness of buffer layer - 5 ㎛ 10 ㎛ 25 ㎛ 5 ㎛ Average width of cracks occurring on the surface of TaC grain boundaries (㎛) 3.3 1.10.36 0.5 10.55 Crack Free

[0110] *Average width corresponds to the average value of cracks measured at 20 points. Bending measurement

[0111] The bending of the composites of the examples and comparative examples was measured. The results are shown in Table 2.

[0112] Method of measuring bending

[0113] A 200 X 3 mm sized tantalum carbide coated product was manufactured, and the height of the product was measured based on the upper half of the CMM measuring instrument. That is, the height of the product was measured at 10 points at equal intervals at 0°, 60°, and 120°. The deviation of the measured values ​​at 30 points was expressed as Warpage.

[0114] Comparison Example 1 Example 1 Example 2 Example 3 Coefficient of thermal expansion of the substrate 4.5 x 10 -6 / K4.5 x 10 -6 / K4.5 x 10 -6 / K4.5 x 10 -6 / KBuffer layer None Yes Yes Yes Buffer layer thickness -5㎛15㎛25㎛Warpage (㎛) 198142740

[0115] FIGS. 4a, 4b, and 4c are SEM images of the TaC layer surface in TaC composites, and are SEM images of (a) Comparative Example 1, (b) Example 4, and (c) Example 1, respectively. Cracks on the surface were observed through the SEM images of the composites of the Examples and Comparative Examples in FIGS. 4a, 4b, and 4c. In Comparative Example 1, the crack width on the TaC surface was large, and when the gap between the cracks was measured in the vertical direction, it was at most 3.0 ㎛ to 3.6 ㎛. This is due to the generation of internal stress between the graphite substrate and TaC. In Examples 1 and 3, in which a buffer layer was introduced, microcracks with a width of at most 0.2 ㎛ to 0.4 ㎛ (Example 1) or no cracks were observed when the gap between the cracks was measured in the vertical direction (Example 4). That is, although a difference in thermal expansion coefficient occurs between the graphite substrate and TaC, the introduction of a buffer layer can relieve the stress between them, thereby reducing the crack width on the surface of the TaC layer or lowering the occurrence of cracks and warpage, thereby reducing the possibility of delamination.

[0116] In Fig. 5, when a buffer layer is applied, the width (㎛) of micro-cracks on the surface of the TaC layer can be reduced by up to 2.8 times (e.g., comparison between Example 1 and Comparative Example 1). In addition, it can be confirmed that the width of the micro-cracks changes depending on the thickness of the buffer layer. In Fig. 6, when a buffer layer is applied, warpage on the surface of the TaC layer can be reduced by up to 14 times (e.g., comparison between Example 1 and Comparative Example 1). In addition, it can be confirmed that warpage changes depending on the thickness of the buffer layer. Table 3 shows the results of measuring stress changes according to the thickness of the pyrolytic carbon layer and the TaC layer.

[0117] Graphite thicknessBuffer layer thicknessTaC thicknessVon mises stressTaC Coating layer(㎛)(㎛)(㎛)(Mpa)Peeling status300001727.5986x5738.7861x50889.9213O1001078.3541O1501107.3871O2001264.6196O11664.7522x5664.7564x50665.1031x100779.4215x150987.3412O2001001.31 54O31665.3722x5665.3763x50665.4037x100770.4152x150977.1541O200998.5254O1 51667.3387x5667.3791x50670.4057x100777.5457x1501047.1341O2001127.4454O20 1672.3386x5673.3771x50691.2257x100820.4357O1501137.2341O2001227.1115O501 770.5315x5824.1453O501127.3803O1001188.325O1501204.458O2001555.7571O1001 779.5515x5925.1451O501457.1716O1001765.2154O1502074.2703O2002299.0879O12 01789.4414O5945.2121O501534.1816O1001861.2133O1502174.2625O2002399.0451O

[0118] (In Table 3, “O” indicates peeling occurred, and “x” indicates no peeling occurred.)

[0119] In Table 3, the lower the thickness of the pyrolytic carbon layer (buffer layer), the greater the stress relaxation effect between the graphite substrate and the TaC layer, and the more likely it is that cracks will be prevented or reduced, or the width of cracks will be reduced, thereby reducing the occurrence of delamination.

[0120] In addition, when the buffer layer thickness becomes thicker than a certain level, the buffer layer may expand more in the vertical direction (e.g., thickness direction) of the formation surface than in the transverse direction of the formation surface due to the coefficient of thermal expansion in the vertical direction (e.g., thickness direction) of the formation surface, which may cause warping and cracking.

[0121] In addition, when forming a buffer layer by CVD, if the thickness of the buffer layer is less than 1 ㎛ or lower, the TaC layer may not be properly deposited.

[0122] The thermal expansion coefficients of the buffer layers formed on the substrates manufactured in Examples 1 to 4 were measured in the X, Y, and Z axes, respectively. The thermal expansion coefficients were measured at 30 points at equal intervals along each direction, and the average value was obtained.

[0123] The coefficient of thermal expansion is measured using a thermal expansion coefficient measuring device (DIL 402C) at room temperature ~ 1000 It was measured up to .

[0124] According to one embodiment, the tantalum carbide composite material can reduce the width of cracks in the tantalum carbide film and reduce warpage by introducing a buffer layer for stress relief between the substrate (e.g., carbon substrate) and the tantalum carbide film.

[0125] According to one embodiment, a component for semiconductor manufacturing can have improved lifespan stability and improve process stability and process efficiency in a semiconductor manufacturing process by applying a tantalum carbide composite material that introduces a buffer layer for stress relief between a substrate (e.g., a carbon substrate) and a tantalum carbide film.

[0126] In one embodiment, there is no stress in the high-temperature CVD process due to the difference in physical properties between the graphite substrate and the TaC coating layer, but stress may be generated during the cooling process due to the difference in physical properties between the two materials, and in particular, the stress may be significantly generated due to the coefficient of thermal expansion. As a result, the generated stress mainly appears as a phenomenon of distortion or cracking, and the degree of damage may increase depending on the increase in the number of times the part is used (the degree of damage accumulates as the temperature rises and cooling increases). Therefore, according to one embodiment, a tantalum carbide composite material can improve stress by forming a buffer layer (e.g., pyrolytic carbon) having intermediate properties between graphite and TaC. This can relieve stress by utilizing the difference between the coefficient of thermal expansion (e.g., average value) along the transverse direction (X-axis, Y-axis) and vertical direction (Z-axis) of the formation surface of the buffer layer (e.g., pyrolytic carbon) and the coefficient of thermal expansion of the graphite substrate and the TaC coating layer.

[0127] In one embodiment, when using a conventional buffer layer material, the buffer layer cannot withstand the expansion of TaC when TaC having a high CTE is finally deposited. However, according to embodiments of the present disclosure, a composite material forms a buffer layer of van der Waals bonding, in which the transverse CTE of the forming surface is lower than the vertical CTE of the forming surface, on a substrate, and forms a layered structure (e.g., using CVD) so as to withstand the expansion of TaC through internal layer slide by utilizing the van der Waals bonding characteristics. Referring to FIGS. 7A and 7B, FIGS. 7A and 7B schematically illustrate an example of a stress relaxation mechanism using a tantalum carbide composite material according to embodiments of the present disclosure, in which the van der Waals bonding, which is a characteristic of the buffer layer in FIGS. 7A and 7B, is very weak in the bonding force in the vertical direction of the forming surface compared to the bonding force (covalent bonding) in the transverse direction of the forming surface. As a result, even if the coefficient of thermal expansion in the transverse direction of the formation surface of the buffer layer is very low, when TaC expands in the transverse direction of the formation surface due to thermal expansion, the transverse bonding of the formation surface is not broken, but the vertical bonding of the formation surface is broken, and internal delamination occurs, resulting in an interlayer slide (cut line at (200) on the right in Fig. 7b). Since the inside of the buffer layer has a layered structure based on the deposition surface (lines within (200) on the upper and left in Figs. 7a and 7b), countless van der Waals bonding layers exist, and internal delamination can occur multiple times at countless points. In other words, due to the countless van der Waals bonding layers, even if one layer itself delaminates, it can effectively expand in accordance with the expansion of TaC without any problem and can withstand the cracking of TaC.

[0128] According to one embodiment, the present disclosure utilizes a buffer layer having a layered structure by van der Waals bonding rather than simply applying a buffer layer made of a material having a CTE difference from a substrate and / or coating layer (e.g., SiC or TaC), and utilizes a buffer layer that can withstand expansion of TaC through internal interlayer slide due to van der Waals bonding characteristics.

[0129] Although the embodiments described above have been described with limited examples and drawings, those skilled in the art will recognize that various modifications and variations are possible based on the above teachings. For example, appropriate results can be achieved even if the described techniques are performed in a different order than described, and / or the described components are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents. Therefore, other implementations, other embodiments, and equivalents of the claims also fall within the scope of the claims described below.

Claims

1. Description; A buffer layer deposited on the above substrate; and Including a tantalum carbide layer deposited on the upper surface of the buffer layer, Tantalum carbide composite material.

2. In paragraph 1, The above buffer layer comprises a material of Van-der-Waals bonding, Tantalum carbide composite material.

3. In paragraph 2, The material of the above van der Waals bond comprises at least one of pyrolytic carbon, BN, MoS2, WSe2, ReS2 and MoTe2 or a combination thereof. Tantalum carbide composite material.

4. In paragraph 1, The buffer layer has different coefficients of thermal expansion in the transverse direction of the forming surface and in the vertical direction of the forming surface. Tantalum carbide composite material.

5. In paragraph 4, In the buffer layer, the coefficient of thermal expansion in the vertical direction of the forming surface is greater than the coefficient of thermal expansion in the transverse direction of the forming surface. Tantalum carbide composite material.

6. In paragraph 5, The coefficient of thermal expansion in the vertical direction of the formation surface of the above buffer layer is 6.0 x 10 -6 / K to 7.0 x 10 -6 / K, and the transverse thermal expansion coefficient of the buffer layer forming surface is 0.2 x 10 -6 / K to 0.7 x 10 -6 / K is, Tantalum carbide composite material.

7. In paragraph 4, A tantalum carbide composite material, wherein the coefficient of thermal expansion in the vertical direction of the formation surface in the buffer layer satisfies at least one of the following conditions i), ii), and iii). i) lower than the coefficient of thermal expansion of the above tantalum carbide layer; ii) Higher than the coefficient of thermal expansion described above; iii) Higher than the median value of the thermal expansion coefficient of the above-mentioned material and the above-mentioned tantalum carbide layer.

8. In paragraph 1, The thickness of the above buffer layer is 1 ㎛ (micrometer) to 100 ㎛ (micrometer). Tantalum carbide composite material.

9. In paragraph 1, The thickness of the above tantalum carbide layer is 1 ㎛ (micrometer) to 100 ㎛ (micrometer). Tantalum carbide composite material.

10. In paragraph 1, The above buffer layer is, It is formed in a layered structure based on the upper surface of the substrate. Tantalum carbide composite material.

11. In paragraph 1, The above tantalum carbide layer is crack-free. Tantalum carbide composite material.

12. In paragraph 1, A tantalum carbide composite material, wherein the warpage of the above tantalum carbide composite material is 10 ㎛ (micrometers) to 50 ㎛ (micrometers).

13. In paragraph 1, A tantalum carbide composite material, wherein the tantalum carbide layer includes cracks having a width of 0.3 ㎛ (micrometer) to 0.6 ㎛ (micrometer).

14. Steps to prepare the equipment; A step of forming a buffer layer on the above substrate; and A step of forming a tantalum carbide layer on the buffer layer; Including, The above buffer layer comprises a material of van der Waals bonding, A method for manufacturing a tantalum carbide composite material, wherein the buffer layer is formed on at least one side or the entire surface of the substrate.

15. In paragraph 14, A method for manufacturing a tantalum carbide composite material, wherein the step of forming the above tantalum carbide layer is to form a film on the buffer layer.

16. In paragraph 14, The step of forming the above buffer layer is 1,500 1,900 inland A method for manufacturing a tantalum carbide composite material, comprising depositing a buffer layer at a temperature of 500 torr to 900 torr and a pressure of 500 torr to 900 torr.

17. In paragraph 14, The step of forming the above tantalum carbide layer is 1,900 2,300 inland A method for manufacturing a tantalum carbide composite material, comprising depositing a tantalum carbide film at a temperature of 200 torr to 400 torr and a pressure of 200 torr to 400 torr.

18. In paragraph 14, A method for manufacturing a tantalum carbide composite material, wherein the step of forming the buffer layer and the step of forming the tantalum carbide layer use a CVD process.

19. In paragraph 14, The step of forming the above buffer layer comprises forming a buffer layer including a material of Van-der-Waals bonding, The material of the above van der Waals bond comprises at least one of pyrolytic carbon, BN, MoS2, WSe2, ReS2 and MoTe2 or a combination thereof. Method for manufacturing tantalum carbide composite material.

20. In paragraph 14, The above manufacturing method is, A method for manufacturing a tantalum carbide composite material, comprising manufacturing the tantalum carbide composite material of claim 1.

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