Light-emitting assembly, manufacturing method therefor, light-emitting chip and display substrate

Abstract

Disclosed in the present application are a light-emitting assembly, a manufacturing method therefor, a light-emitting chip and a display substrate. The light-emitting assembly comprises: a plurality of light-emitting units, a color conversion layer, a common electrode layer, first electrodes and a first encapsulation layer. The color conversion layer is located on a side of the light-emitting units and used for converting the colors of light rays emitted by the light-emitting units. Each first electrode is located on the other side of a light-emitting unit and used for receiving a drive signal. The first encapsulation layer is used for encapsulating the light-emitting units, so as to prevent any two adjacent light-emitting units from interfering with each other. At least two light-emitting units amongst the plurality of light-emitting units are connected together by means of the common electrode layer, so as to ensure the alignment precision of a subsequent bonding connection process, improving product yield.

Description

Light-emitting component and preparation method thereof, light-emitting chip, and display substrate Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting component and a preparation method thereof, a light-emitting chip, and a display substrate. Background Art

[0002] The display panel includes a display backplane and a plurality of light-emitting components connected to the display backplane, wherein the display backplane can provide driving signals for the light-emitting components to make the light-emitting components emit light, thereby realizing display.

[0003] Summary of the Invention

[0004] The present application provides a light-emitting component and a method for manufacturing the same, a light-emitting chip, and a display substrate. The technical solution is as follows:

[0005] In one aspect, a light emitting assembly is provided, comprising:

[0006] A plurality of light-emitting units, each of the light-emitting units comprising a stacked first semiconductor layer, a light-emitting layer, and a second semiconductor layer;

[0007] a color conversion portion, located on a side of the first semiconductor layer away from the light-emitting layer;

[0008] a common electrode layer, located between the first semiconductor layer and the color conversion portion and electrically connected to the first semiconductor layer, wherein the common electrode layer is connected to at least two of the light-emitting units;

[0009] a first electrode, located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer, the first electrode being disposed in a one-to-one correspondence with the light-emitting units;

[0010] a first encapsulation layer, surrounding at least a side wall of the light-emitting unit;

[0011] Wherein, in the thickness direction of the light-emitting layer, the distance between the first electrode and the common electrode layer is smaller than the span of the first encapsulation layer in the thickness direction.

[0012] Optionally, the light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion;

[0013] For each of the light-emitting units, the first encapsulation layer exposes the first semiconductor layer on a side of the first semiconductor layer facing the color conversion portion, so that the first semiconductor layer is electrically connected to the common electrode layer;

[0014] A target area is defined between the first encapsulation layer and the color conversion component. The light-emitting component further comprises a filling layer, which is located in the target area. The filling layer is located on a side close to the color conversion component and is located in the same plane as an end of the first encapsulation layer close to the color conversion component.

[0015] Optionally, the filling layer is made of a conductive material; the portion of the first encapsulation layer located between any two adjacent light-emitting units further comprises an opening, wherein the opening exposes the filling layer; the light-emitting component further comprises: a second electrode;

[0016] At least a portion of the second electrode is located in the opening, and the second electrode is connected to the filling layer and the common electrode layer exposed through the opening.

[0017] Optionally, the filling layer includes a first end surface in contact with the common electrode layer and a second end surface in contact with a side of the first encapsulation layer away from the color conversion component, and the first end surface and an end of the first encapsulation layer close to the color conversion component are located in the same plane;

[0018] The filling layer further includes a first side surface, and the first side surface is disposed in contact with a portion of the first encapsulation layer surrounding each of the at least two light-emitting units.

[0019] Optionally, the light emitting component further includes a color conversion component, and the color conversion component includes the color conversion part;

[0020] Wherein, the color conversion component further includes:

[0021] a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and the color conversion portion is located at least within the first accommodating space and is used to convert the color of the light emitted by the light-emitting unit;

[0022] a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space;

[0023] and a light filter portion, the light filter portion being located at least in the second receiving space, wherein the light filter portion is configured to transmit the light converted by the color conversion portion;

[0024] The retaining wall structure includes a first portion located in the edge area of ​​the multiple light-emitting units, and a second portion located between any two adjacent light-emitting units among the multiple light-emitting units; the height of the second portion is less than the height of the first portion, and the difference between the height of the first portion and the height of the second portion is 10% to 90% of the total thickness of the light-emitting unit.

[0025] Optionally, a distance between an end of the first electrode away from the common electrode layer and the common electrode layer is greater than or equal to a span of the first encapsulation layer in the thickness direction;

[0026] In the thickness direction of the light-emitting layer, a relationship between a distance h1 between the first electrode and the common electrode layer and a span h2 of the first encapsulation layer in the thickness direction satisfies: a ratio of h1 to h2 is in a range of 0.1 to 0.9.

[0027] Optionally, the first semiconductor layer includes P-type doped gallium nitride, the second semiconductor layer includes N-type doped gallium nitride, and the light-emitting layer includes a multi-quantum well layer.

[0028] Optionally, for each light-emitting unit, a side of the first encapsulation layer away from the color conversion portion exposes the second semiconductor layer, so that the second semiconductor layer is electrically connected to the first electrode;

[0029] A distance between an end portion of the first encapsulation layer close to the color conversion portion and the color conversion portion is smaller than a distance between a surface of the first semiconductor layer close to the color conversion portion and the color conversion portion.

[0030] Optionally, a surface of the first encapsulation layer away from the color conversion portion and a surface of the second semiconductor layer away from the color conversion portion are located in the same plane.

[0031] Optionally, the light emitting assembly further includes a blocking portion surrounding at least a side wall of the light emitting unit, wherein the blocking portion absorbs or reflects light emitted by the light emitting unit;

[0032] The blocking portion surrounding the sidewall of the light emitting unit is located on a side of the first encapsulation layer away from the light emitting unit.

[0033] Optionally, the material of the barrier portion is metal; the barrier portion is further located on a side of the second semiconductor layer away from the color conversion portion, and is electrically connected to the second semiconductor layer;

[0034] Wherein, the blocking portion is a first electrode, or

[0035] The blocking portion is located on a side of the first electrode away from the second semiconductor layer, and the blocking portion is electrically connected to the second semiconductor layer through the first electrode, or,

[0036] The blocking portion is located between the first electrode and the second semiconductor layer, and is electrically connected to the second semiconductor layer and the first electrode respectively.

[0037] Optionally, the first encapsulation layer includes a plurality of independent encapsulation patterns, and each of the encapsulation patterns surrounds a side wall of the light-emitting unit.

[0038] Optionally, the common electrode layer includes a first electrode region and a second electrode region;

[0039] The first electrode region is located in a groove defined by the first packaging layer and the first semiconductor layer, and the second electrode region is disposed around the first electrode region.

[0040] Optionally, the light emitting component further includes a planar layer located between the common electrode layer and the color conversion portion, and the planar layer fills the groove;

[0041] The light emitting assembly further includes a color conversion assembly, and the color conversion assembly includes the color conversion portion;

[0042] Wherein, the color conversion component further includes:

[0043] a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and the color conversion portion is located at least within the first accommodating space and is used to convert the color of the light emitted by the light-emitting unit;

[0044] a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space;

[0045] and a filter portion, the filter portion being located at least in the second receiving space, wherein the filter portion is used to transmit the light converted by the color conversion portion.

[0046] Optionally, a distance between a surface of the planar layer away from the common electrode layer and the first electrode is greater than or equal to a span of the first encapsulation layer in the thickness direction;

[0047] In the thickness direction of the light-emitting layer, a relationship between a distance h3 between the first electrode and the common electrode layer and a span h4 of the first encapsulation layer in the thickness direction satisfies: a ratio of h3 to h4 ranges from 0.1 to 0.9.

[0048] Optionally, at least a portion of the color conversion portion is located in the groove portion and is located on a side of the common electrode layer away from the light-emitting unit.

[0049] Optionally, the light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion;

[0050] The color conversion component further includes:

[0051] a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and a portion of the color conversion portion is located within the first accommodating space for converting the color of light emitted by the light-emitting unit;

[0052] a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space;

[0053] and a filter portion, the filter portion being located at least in the second receiving space, wherein the filter portion is used to transmit the light converted by the color conversion portion.

[0054] Optionally, the common electrode layer includes a first electrode region and a second electrode region; the first electrode region is located in a groove defined by the first encapsulation layer and the first semiconductor layer; the second electrode region is arranged around the first electrode region; the color conversion portion is at least partially located in the groove and is located on a side of the common electrode layer away from the light-emitting unit;

[0055] The light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion;

[0056] The color conversion component further includes:

[0057] a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and a portion of the color conversion portion is located within the first accommodating space for converting the color of light emitted by the light-emitting unit;

[0058] a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space;

[0059] and a light filter portion, the light filter portion being located at least in the second receiving space, wherein the light filter portion is configured to transmit the light converted by the color conversion portion;

[0060] The retaining wall structure wraps the edge of the packaging pattern, and the common electrode layer is located between the retaining wall structure and the color conversion part.

[0061] Optionally, in the thickness direction of the light-emitting layer, the relationship between the distance h5 between the first electrode and the common electrode layer and the span h6 of the first encapsulation layer in the thickness direction satisfies: the ratio range of h5 to h6 is 0.1 to 0.9.

[0062] Optionally, the color conversion portion includes: a red color conversion portion, a green color conversion portion, and a blue color conversion portion, wherein the red color conversion portion is used to convert the light emitted by the light emitting unit into red, the green color conversion portion is used to convert the light emitted by the light emitting unit into green, and the blue color conversion portion is used to convert the light emitted by the light emitting unit into blue;

[0063] The filter section includes: a red filter section, a green filter section and a blue filter section, the red filter section is used to transmit the light converted by the red color conversion section, the green filter section is used to transmit the light converted by the green filter section, and the blue filter section is used to transmit the light converted by the blue filter section;

[0064] The light emitted by the light emitting unit is blue, the blue color conversion portion may be a transparent portion, and the blue filter portion is a transparent portion.

[0065] Optionally, the retaining wall structure is made of opaque material.

[0066] Optionally, the material of the first electrode includes at least one of a metal and a conductive oxide; and the material of the common electrode layer includes a conductive oxide.

[0067] Optionally, the first semiconductor layer includes N-type doped gallium nitride, the second semiconductor layer includes P-type doped gallium nitride, and the light-emitting layer includes a multi-quantum well layer.

[0068] Optionally, the light-emitting component further comprises: a driving unit located on a side of the plurality of light-emitting units away from the color conversion layer, and a bonding layer located between the common electrode layer and the driving unit; at least a portion of the light-emitting units is located inside the bonding layer;

[0069] The driving unit is used to drive the light-emitting unit to emit light, the first electrode and the common electrode layer are electrically connected to the driving unit respectively, and the driving unit includes a plurality of third electrodes, and the third electrodes are used to introduce external signals.

[0070] On the other hand, a display substrate is provided, comprising a driving backplane and a plurality of light-emitting components as described in the above aspect, wherein the driving backplane is used to carry the light-emitting components and provide driving signals to the light-emitting components;

[0071] Wherein, one light-emitting component constitutes one light-emitting chip, and the light-emitting chip array is arranged on the driving backplane and electrically connected to the driving backplane; or,

[0072] A plurality of light-emitting components constitute a light-emitting chip, and bonding layers between adjacent light-emitting components are continuously distributed.

[0073] On the other hand, a display substrate is provided, which includes a driving backplane and a plurality of light-emitting components as described in the above aspects; the driving backplane is used to carry the light-emitting components and provide driving signals to the light-emitting components.

[0074] Optionally, the display substrate further includes a bonding layer located between the common electrode layer and the driving unit; at least a portion of the light-emitting unit is located inside the bonding layer.

[0075] On the other hand, a light-emitting chip is provided, comprising the light-emitting component described in the above aspect, wherein the projection area of ​​the light-emitting chip on the light-emitting plane of the light-emitting chip is less than or equal to 1 square millimeter.

[0076] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0077] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a filling layer, each of the light-emitting units comprising a second semiconductor layer, a light-emitting layer, and a first semiconductor layer sequentially stacked in a direction away from the first substrate, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer;

[0078] Obtaining a second target structure, the second target structure comprising: a second substrate, a color conversion component located on the second substrate, and a common electrode layer, the color conversion component comprising: a retaining wall structure, a color conversion portion, a light shielding layer, and a light filter portion, the retaining wall structure forming a plurality of first accommodation spaces, the color conversion portion being located within the first accommodation spaces; the light shielding layer forming a plurality of second accommodation spaces, and the light filter portion being located within the second accommodation spaces;

[0079] Bonding the first target structure and the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion;

[0080] peeling the first substrate from the second semiconductor layer of the plurality of light emitting units;

[0081] A first electrode is formed on a side of the second semiconductor layer of each light emitting unit away from the first semiconductor layer.

[0082] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0083] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, a filling layer, and a common electrode layer, each of the light-emitting units comprising a second semiconductor layer, a light-emitting layer, and a first semiconductor layer sequentially stacked in a direction away from the first substrate, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer, and the common electrode layer being electrically connected to the first semiconductor layers of the plurality of light-emitting units;

[0084] Obtaining a second target structure, the second target structure comprising: a second substrate; a color conversion component located on the second substrate; the color conversion component comprising: a retaining wall structure, a color conversion portion, a light shielding layer, and a light filter portion; the retaining wall structure forming a plurality of first accommodating spaces; the color conversion portion being located within the first accommodating spaces; the light shielding layer forming a plurality of second accommodating spaces; and the light filter portion being located within the second accommodating spaces;

[0085] Bonding the first target structure and the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion;

[0086] peeling the first substrate from the second semiconductor layer of the plurality of light emitting units;

[0087] A first electrode is formed on a side of the second semiconductor layer of each light emitting unit away from the first semiconductor layer.

[0088] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0089] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer exposing the second semiconductor layer of the light-emitting unit, each of the blocking portions having a ring-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and each of the blocking portions exposing the second semiconductor layer of the light-emitting unit, and the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer;

[0090] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0091] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0092] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0093] forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0094] forming a flat layer on a side of the common electrode layer away from the second substrate;

[0095] forming a retaining wall structure on a side of the flat layer away from the second substrate, and forming a color conversion portion in the first accommodation space of the retaining wall structure;

[0096] A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

[0097] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0098] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of the light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of the light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer;

[0099] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0100] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0101] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0102] forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0103] forming a retaining wall structure on a side of the common electrode layer away from the second substrate, and forming a color conversion portion in the groove and the first accommodation space of the retaining wall structure;

[0104] A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

[0105] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0106] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of each light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of a light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding the sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer;

[0107] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0108] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0109] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0110] forming a retaining wall structure and a light shielding layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the retaining wall structure and the light shielding layer constitute a plurality of third accommodating spaces;

[0111] forming a common electrode layer on a side of the light shielding layer away from the second substrate, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0112] A color conversion portion and a filter portion are sequentially formed in the groove portion and the third accommodating space.

[0113] In another aspect, a method for preparing a display substrate is provided, the method comprising:

[0114] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer exposing the second semiconductor layer of the light-emitting unit, each of the blocking portions having a ring-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and each of the blocking portions exposing the second semiconductor layer of the light-emitting unit, and the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer;

[0115] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0116] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0117] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0118] forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0119] forming a flat layer on a side of the common electrode layer away from the second substrate;

[0120] forming a retaining wall structure on a side of the flat layer away from the second substrate, and forming a color conversion portion in the first accommodation space of the retaining wall structure;

[0121] A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

[0122] In another aspect, a method for preparing a display substrate is provided, the method comprising:

[0123] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of the light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of the light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer;

[0124] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0125] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0126] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0127] forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0128] forming a retaining wall structure on a side of the common electrode layer away from the second substrate, and forming a color conversion portion in the groove and the first accommodation space of the retaining wall structure;

[0129] A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

[0130] In another aspect, a method for preparing a display substrate is provided, the method comprising:

[0131] Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of each light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of a light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding the sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer;

[0132] Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit;

[0133] Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected;

[0134] peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units;

[0135] forming a retaining wall structure and a light shielding layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the retaining wall structure and the light shielding layer constitute a plurality of third accommodating spaces;

[0136] forming a common electrode layer on a side of the light shielding layer away from the second substrate, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units;

[0137] A color conversion portion and a filter portion are sequentially formed in the groove portion and the third accommodating space. BRIEF DESCRIPTION OF THE DRAWINGS

[0138] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0139] FIG1 is a schematic structural diagram of a light-emitting component provided in an embodiment of the present application;

[0140] FIG2 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0141] FIG3 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0142] FIG4 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0143] FIG5 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0144] FIG6 is a schematic structural diagram of a driving unit provided in an embodiment of the present application;

[0145] FIG7 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0146] FIG8 is a structural flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0147] FIG9 is a top view flow chart of some steps in a method for preparing a light-emitting component provided in an embodiment of the present application;

[0148] FIG10 is a flowchart of obtaining a first target structure according to an embodiment of the present application;

[0149] FIG11 is a structural flow chart of obtaining a first target structure provided by an embodiment of the present application;

[0150] FIG12 is a top view flowchart of obtaining a first target structure according to an embodiment of the present application;

[0151] FIG13 is a flow chart of obtaining a second target structure according to an embodiment of the present application;

[0152] FIG14 is a structural flow chart of obtaining a second target structure provided by an embodiment of the present application;

[0153] FIG15 is a top view flowchart of obtaining a second target structure according to an embodiment of the present application;

[0154] FIG16 is a schematic diagram of a sparse arrangement of multiple light-emitting components provided in an embodiment of the present application;

[0155] FIG17 is a top view of FIG16;

[0156] FIG18 is another top view of FIG16;

[0157] FIG19 is a schematic diagram of a plurality of closely arranged light-emitting components provided in an embodiment of the present application;

[0158] FIG20 is a top view of FIG19;

[0159] FIG21 is a flow chart of a method for preparing a display substrate provided in an embodiment of the present application;

[0160] FIG22 is a structural flow chart of some steps in a method for preparing a display substrate provided in an embodiment of the present application;

[0161] FIG23 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0162] FIG24 is a structural flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0163] FIG25 is a top view flowchart of some steps in another method for preparing a light-emitting component provided in an embodiment of the present application;

[0164] FIG26 is a flow chart of obtaining a first target structure according to an embodiment of the present application;

[0165] FIG27 is a structural flow chart of obtaining a first target structure provided by an embodiment of the present application;

[0166] FIG28 is a top view flowchart of obtaining a first target structure according to an embodiment of the present application;

[0167] FIG29 is a flow chart of obtaining a second target structure according to an embodiment of the present application;

[0168] FIG30 is a structural flow chart of obtaining a second target structure provided by an embodiment of the present application;

[0169] FIG31 is a top view flowchart of obtaining a second target structure according to an embodiment of the present application;

[0170] FIG32 is a schematic diagram of a sparse arrangement of multiple light-emitting components provided in an embodiment of the present application;

[0171] FIG33 is a schematic diagram of a plurality of closely arranged light-emitting components provided in an embodiment of the present application;

[0172] FIG34 is a flow chart of another method for preparing a display substrate provided in an embodiment of the present application;

[0173] FIG35 is a structural flow chart of some steps in another method for preparing a display substrate provided in an embodiment of the present application;

[0174] FIG36 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0175] FIG37 is a structural flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0176] FIG38 is a top view flowchart of some steps in a method for preparing a light-emitting component in an embodiment of the present application;

[0177] FIG39 is a top view flowchart of some steps in a method for preparing multiple light-emitting components according to an embodiment of the present application;

[0178] FIG40 is a flowchart of obtaining a first target structure according to an embodiment of the present application;

[0179] FIG41 is a structural flow chart of obtaining a first target structure provided by an embodiment of the present application;

[0180] FIG42 is a top view flowchart of obtaining a first target structure according to an embodiment of the present application;

[0181] FIG43 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0182] FIG44 is a structural flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0183] FIG45 is a top view flowchart of some steps of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0184] FIG46 is a flowchart of obtaining a first target structure provided by an embodiment of the present application;

[0185] FIG47 is a structural flow chart of obtaining a first target structure provided by an embodiment of the present application;

[0186] FIG48 is a top view flowchart of obtaining a first target structure according to an embodiment of the present application;

[0187] FIG49 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0188] FIG50 is a structural flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0189] FIG51 is a top view flowchart of some steps in a method for preparing a light-emitting component provided in an embodiment of the present application;

[0190] FIG52 is a top view of a light-emitting assembly provided in an embodiment of the present application;

[0191] FIG53 is a top view of another light-emitting assembly provided in an embodiment of the present application;

[0192] FIG54 is a top view of another light-emitting assembly provided in an embodiment of the present application;

[0193] FIG55 is a schematic diagram of a partial structure of a display substrate provided in an embodiment of the present application;

[0194] Figure 56 is a top view of a display substrate provided in an embodiment of the present application. DETAILED DESCRIPTION

[0195] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0196] In related art, a light-emitting assembly includes multiple light-emitting units and a driving unit. Each light-emitting unit is connected to the driving unit so that the driving unit provides a driving signal to the multiple light-emitting units, thereby causing the multiple light-emitting units to emit light under the driving unit. The bonding connection between the multiple light-emitting units and the driving unit in the light-emitting assembly requires mass transfer.

[0197] However, mass transfer technology requires bonding multiple light-emitting units and driving units, and the alignment accuracy during bonding is low, resulting in a low product yield.

[0198] Micro light emitting diode (Micro LED) technology is an emerging display technology. Micro LEDs essentially thin-film, miniaturize, and array conventional light-emitting units, reducing each unit to just a few microns to tens of microns and enabling self-luminescence. Micro LEDs offer numerous advantages, including high brightness, low power consumption, and ultra-high resolution. They can enable ultra-high-resolution, high-performance wearable display devices, such as virtual reality (VR) and augmented reality (AR).

[0199] A micro light emitting diode (Micro LED) display substrate generally includes a driving backplane, a driving unit integrated on the driving backplane, and a light-emitting chip bonded to the driving unit. When preparing the Micro LED display substrate, in order to achieve color display, it is necessary to transfer and bond light-emitting chips of different colors to the driving backplane integrated with the driving unit, and the light-emitting chips of the same color are transferred at the same time, and the light-emitting chips of different colors are transferred in batches. That is, the number of transfers is the number of colors of the light-emitting chip. Optionally, the light-emitting chip includes light-emitting chips of three colors, such as a red (red, R) light-emitting chip, a green (green, G) light-emitting chip, and a blue (blue) light-emitting chip, and thus three transfers are required. This solution requires a large number of transfers when preparing the Micro LED display substrate, and has relatively stringent requirements on equipment and process. The process is relatively complex, and it is also a big challenge to the yield rate.

[0200] Furthermore, to reduce the manufacturing cost of Micro LED display substrates, the driver backplane is designed to be small (because if it is too large, if some of the light-emitting chips fail to emit light after transfer, the entire product will be scrapped, resulting in high costs). Therefore, if this solution needs to achieve a large-scale display, it can only be achieved through splicing, which results in poor display quality.

[0201] The red, green and blue micro-display chip (RGB Micro LED) is bonded to the driving unit to form a new active-matrix light-emitting diode (AM-LED) chip with its own driving circuit. The AM-LED chip includes a blue light-emitting chip, quantum dots that excite red and green light, and a driving unit that drives the light-emitting chip. Furthermore, depending on the size of the display substrate that needs to be prepared, a corresponding number of AM-LED chips are used to perform one-time transfer bonding with the driving backplane to realize the preparation of a glass-based color light-emitting diode (LED) display substrate. At the same time, this solution only requires one transfer process, and the process is relatively simple. In addition, large-size display can be achieved without splicing, which can improve the glass utilization rate of the driving backplane, thereby reducing costs.

[0202] Furthermore, this AM-LED chip utilizes dual electrical and optical testing technology to select chips that meet both optical and driving performance requirements. This improves chip yield on the display substrate and facilitates repair and replacement of defective chips, compared to solutions that integrate the driver circuitry onto a driver backplane to form the display substrate. However, AM-LED chips can only be produced on wafer-sized substrates and are unsuitable for large-scale glass substrates.

[0203] Furthermore, whether transferring red, green, and blue light-emitting chips in three stages, or transferring a blue light-emitting chip combined with quantum dots in a single stage, a mass transfer process is required to bond the light-emitting chips to the driver backplane. During this mass transfer process, light leakage may occur due to poor alignment accuracy or other reasons, affecting the yield and quality of the Micro LED display substrate.

[0204] FIG1 is a schematic structural diagram of a light emitting assembly 10 provided in an embodiment of the present application. Referring to FIG1 , the light emitting assembly 10 includes: a plurality of light emitting units 101 , a color conversion portion 1021 , a common electrode layer 103 , a first electrode 104 , and a first encapsulation layer 105 .

[0205] Each light-emitting unit 101 includes a stacked first semiconductor layer 1011, a light-emitting layer 1012, and a second semiconductor layer 1013. The doping type of the first semiconductor layer 1011 is different from the doping type of the second semiconductor layer 1013. Specifically, the first semiconductor layer 1011 can be N-type doped, and the second semiconductor layer 1013 can be P-type doped. Alternatively, the first semiconductor layer 1011 can be P-type doped, and the second semiconductor layer 1013 can be N-type doped.

[0206] The color conversion portion 1021 is located on a side of the first semiconductor layer 1011 away from the light emitting layer 1012 . The color conversion portion 1021 is used to convert the color of the light emitted by the light emitting unit 101 .

[0207] The common electrode layer 103 is located between the first semiconductor layer 1011 and the color conversion element 102 and is electrically connected to the first semiconductor layer 1011. The common electrode layer 103 can connect at least two light-emitting units 101. For example, the common electrode layer 103 can be electrically connected to the first semiconductor layer 1011 of each light-emitting unit 101 in the plurality of light-emitting elements 10.

[0208] The first electrode 104 is located on a side of the second semiconductor layer 1013 away from the light-emitting layer 1012 and is electrically connected to the second semiconductor layer 1013. The first electrode 104 is provided in a one-to-one correspondence with the light-emitting unit 101. The first electrode 104 can be used to connect the light-emitting unit 101 and the driving unit 112, and to transmit the driving signal of the driving unit 112 to the second semiconductor layer 1013 of the light-emitting unit 101.

[0209] The first encapsulation layer 105 at least surrounds the sidewalls of the light-emitting unit 101. The first encapsulation layer 105 can be used to encapsulate the light-emitting unit 101 to prevent adjacent light-emitting units 101 from affecting each other.

[0210] In the embodiment of the present application, the first electrode 104 and the common electrode layer 103 of the light emitting component 10 are respectively located on both sides of the light emitting unit 101. This structure can be called a vertical structure, and the light emitting unit 101 can be called a light emitting unit 101 with a vertical structure.

[0211] In addition, in the thickness direction X of the light-emitting layer 1012, the distance h1 between the first electrode 104 and the common electrode layer 103 is smaller than the span h2 of the first encapsulation layer 105 in the thickness direction. The distance between the first electrode 104 and the common electrode layer 103 may refer to the distance between a side of the first electrode 104 closer to the common electrode layer 103 and a side of the common electrode layer 103 closer to the first electrode 104.

[0212] The fact that the distance h1 between the first electrode 104 and the common electrode layer 103 in the thickness direction X of the light-emitting layer 1012 is smaller than the span h2 of the first encapsulation layer 105 in the thickness direction can be used to indicate that the first encapsulation layer 105 has a portion extending beyond the common electrode layer 103 or the first electrode 104 in the thickness direction X of the light-emitting layer 1012. Thus, the portion of the first encapsulation layer 105 extending beyond the common electrode layer 103 or the first electrode 104 can constitute an accommodation space, facilitating the embedding of other structures within the accommodation space and improving connection reliability.

[0213] Moreover, since at least two of the plurality of light-emitting units 101 are connected via the common electrode layer 103, the at least two light-emitting units 101 can form a whole, thereby ensuring the alignment accuracy of the bonding connection in the subsequent bonding process and improving the product yield.

[0214] In summary, an embodiment of the present application provides a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0215] In the embodiment of the present application, the material of the first electrode 104 includes at least one of a metal and a conductive oxide, and the material of the common electrode layer 103 includes a conductive oxide.

[0216] As an optional implementation, referring to FIG1 , for each light-emitting unit 101, the first encapsulation layer 105 exposes the first semiconductor layer 1011 of the light-emitting unit 101 on a side of the first semiconductor layer 1021 facing the color conversion portion 1021, thereby enabling electrical connection between the first semiconductor layer 1011 and the common electrode layer 103. In other words, the first encapsulation layer 105 serves only to protect the sidewalls of the light-emitting unit 101 and does not insulate the first semiconductor layer 1011 and the common electrode layer 103 from each other.

[0217] Referring to Figure 1 , first encapsulation layer 105 is also located between any two adjacent light-emitting units 101. Because the film layers of light-emitting units 101 are not present between the two adjacent light-emitting units 101, the portion of first encapsulation layer 105 located between the two adjacent light-emitting units 101 is further away from color conversion component 102 than the portion surrounding the sidewalls of light-emitting units 101. Therefore, a target region can be formed between any two adjacent light-emitting units 101, between first encapsulation layer 105 and color conversion component 102.

[0218] 1 , to prevent the first encapsulation layer 105 from collapsing during subsequent processes due to the presence of the target area, the light emitting component 10 may further include a filling layer 106. The filling layer 106 may be located in the target area (eg, to fill the target area).

[0219] The side of the filling layer 106 close to the color conversion component 102 can be coplanar with the end of the first encapsulation layer 105 close to the color conversion component 102. Optionally, the filling layer 106 includes a first end surface in contact with the common electrode layer 103 and a second end surface in contact with the side of the first encapsulation layer 105 close to the color conversion component 102. The first end surface and the end of the first encapsulation layer close to the color conversion component 102 are coplanar.

[0220] In addition, the filling layer 106 further includes a first side surface, which is arranged in contact with a portion of the first encapsulation layer 105 surrounding each of the at least two light-emitting units 101 .

[0221] The end of the first encapsulation layer 105 close to the color conversion component 102 may be the end of the portion of the first encapsulation layer 105 surrounding the sidewall of the light-emitting unit 101 close to the color conversion component 102. Optionally, the side of the filling layer 106 close to the color conversion component 102 and the end of the first encapsulation layer 105 close to the color conversion component 102 may be ground using the same grinding process.

[0222] In the first embodiment, the common electrode layer 103 has a target portion M extending beyond the boundary of the first encapsulation layer 105 in a direction perpendicular to the thickness direction X. Thus, the light-emitting component 10 further includes a second electrode (not shown). The second electrode can be electrically connected to the target portion M, thereby electrically connecting the second electrode to the first semiconductor layer 1011 via the common electrode layer 103.

[0223] By providing the second electrode, the second electrode can facilitate the transmission of the driving signal of the driving unit 112 to the common electrode layer 103, and then transmit the driving signal to the first semiconductor layer 1011 through the common electrode layer 103. Of course, the second electrode can also be omitted, and the common electrode layer can be directly connected to the driving unit 112.

[0224] The driving signal (referred to as a first driving signal) received by the first electrode 104 from the driving unit 112 is different from the driving signal (referred to as a second driving signal) received by the second electrode 112 from the driving unit 112. The light-emitting layer 1012 of the light-emitting unit 101 can emit light under the combined action of the first driving signal transmitted by the first electrode 104 and the second driving signal transmitted by the second electrode.

[0225] In this first solution, the color conversion component 102 can be formed on a glass substrate, and the common electrode layer 103 can be formed on one side of the color conversion component 102. Multiple light-emitting units 101 and the color conversion component 102 are then aligned and bonded together, so that the first semiconductor layers 1011 of at least two light-emitting units 101 are electrically connected to the common electrode layer 103. This approach allows the common electrode layer 103 to have a target portion M that extends beyond the boundary of the first encapsulation layer 105, thereby facilitating the design of the second electrode.

[0226] Furthermore, this solution allows the color conversion component 102 to be fabricated on a glass substrate, enabling full-color display. Furthermore, the subsequent bonding with the driver unit 112 eliminates the need for a mass transfer process, reducing sidewall light leakage and crosstalk between adjacent light-emitting units, thereby improving production efficiency and yield, and reducing production costs.

[0227] In Option 2, referring to Figure 2 , the filling layer 106 is made of a conductive material. The portion of the first encapsulation layer 105 located between any two adjacent light-emitting units 101 further includes an opening, which exposes the filling layer 106. The light-emitting assembly 10 also includes a second electrode 107. At least a portion of the second electrode 107 is located within the opening, and the second electrode 107 is connected to the common electrode layer 103 through the portion of the filling layer 106 exposed by the opening.

[0228] Since the filling layer 106 is made of a conductive material, the second electrode 107 can transmit the second driving signal to the common electrode layer 103 through the filling layer 106 to achieve signal conduction.

[0229] Optionally, the filling layer 106 may be made of an opaque metal such as copper (Cu), nickel (Ni), aluminum (Al), titanium (Ti), or gold (Au). Since the filling layer 106 is opaque, it can also be used to prevent light crosstalk.

[0230] In this second solution, the common electrode layer 103 can be first formed on one side of the first semiconductor layer 1011 of the light-emitting unit 101 and then bonded to the color conversion component 102 formed on the glass substrate. The common electrode layer 103 formed in this manner does not have a target portion M extending beyond the boundary of the first encapsulation layer 105. Therefore, an opening can be provided in the portion of the first encapsulation layer 105 located between two adjacent light-emitting units 101, thereby connecting the second electrode 107 to the common electrode layer 103 via the filler layer 106 composed of a conductive material.

[0231] Furthermore, this solution allows the color conversion component 102 to be fabricated on a glass substrate, enabling full-color display. Furthermore, subsequent bonding with the driver circuit eliminates the need for a mass transfer process, reducing sidewall light leakage and crosstalk between adjacent light-emitting units, thereby improving production efficiency and yield, and reducing production costs.

[0232] 1 and 2 , in the above-mentioned solutions 1 and 2, the color conversion assembly 102 includes a color conversion portion 1021 , a retaining wall structure 1022 , a light shielding layer 1023 and a light filtering portion 1024 .

[0233] The retaining wall structure 1022 constitutes multiple first accommodating spaces (not shown in Figures 1 and 2), each first accommodating space exposes a light-emitting area of ​​the light-emitting unit 101, and the color conversion part 1021 is located at least in the first accommodating space, and the color conversion part 1021 is used to convert the color of the light emitted by the light-emitting unit 101.

[0234] Optionally, the light emitted by the multiple light-emitting units 101 included in the light-emitting assembly 10 can all be of a first wavelength, and the color conversion unit 1021 can include a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit can convert light of the first wavelength into light of the second wavelength, the second color conversion unit can convert light of the first wavelength into light of the third wavelength, and the third color conversion unit can convert light of the first wavelength into light of the fourth wavelength.

[0235] For example, the color of the light of the first wavelength can be blue, that is, the multiple light-emitting units 101 are all blue light-emitting units. The color of the light of the second wavelength can be red, and the first color conversion unit can convert the blue light of the first wavelength into red light of the second wavelength. The color of the light of the third wavelength can be green, and the second color conversion unit can convert the blue light of the first wavelength into green light of the third wavelength. The color of the light of the fourth wavelength can be blue, and the third color conversion unit can convert the blue light of the first wavelength into blue light of the fourth wavelength. The first wavelength and the fourth wavelength can be equal or unequal.

[0236] For example, assuming the first wavelength and the fourth wavelength are equal, the first color conversion portion may include red quantum dots (QDs), and the second color conversion portion may include green quantum dots. The third color conversion portion may be a transparent portion that can be used to transmit the light of the first wavelength emitted by the light-emitting unit 101. For example, the material of the transparent portion may be transparent optical adhesive (OC).

[0237] Furthermore, referring to Figures 1 and 2 , the light shielding layer 1023 forms a plurality of second accommodation spaces (not shown in Figures 1 and 2 ), each of which can be provided in correspondence with a corresponding first accommodation space. A light filter 1024 is located at least within the second accommodation space and is configured to transmit light converted by the color conversion unit 1021.

[0238] Optionally, the filter section 1024 may include a first filter section that transmits light of the second wavelength, a second filter section that transmits light of the third wavelength, and a third filter section that transmits light of the fourth wavelength. The first filter section is a red color block, the first filter section may correspond to the position of the first color conversion section, and the first filter section is used to transmit the red light of the second wavelength converted by the first color conversion section. The second filter section is a green color block, the second filter section may correspond to the position of the second color conversion section, and the second filter section is used to transmit the green light of the third wavelength converted by the second color conversion section. The third filter section is a blue color block or a transparent section, the third filter section may correspond to the position of the third color conversion section, and the third filter section is used to transmit the blue light of the fourth wavelength converted by the third color conversion section.

[0239] In the embodiment of the present application, the specific design pattern of the light shielding layer 1023 can be determined based on the design pattern of the light emitting unit 101, and this embodiment of the present application does not specifically limit this. The material of the light shielding layer 1023 can be a conventional resin-type negative photoresist BM material, and the width of the second receiving space formed by the light shielding layer 1023 can range from 1 micron (μm) to 15 μm. The thickness of the light shielding layer 1023 can range from 0.5 μm to 5 μm.

[0240] The filter portion 1024 can be made of a conventional resin negative photoresist material, and the process sequence for different color filter portions has no special requirements. The thickness of the filter portion 1024 can be the same as that of the light shielding layer 1023, and the thickness range can be 0.5 μm to 5 μm.

[0241] The retaining wall structure 1022 can be a resin-type negative photoresist BM material, and the height of the retaining wall structure 1022 can be greater than 1 μm, and there is no upper limit. The retaining wall structure 1022 and the light-shielding layer 1023 can be the same material or different materials. There are no special requirements for the covering relationship between the orthographic projection of the retaining wall structure 1022 on the reference plane and the orthographic projection of the light-shielding layer 1023 on the reference plane. For example, the orthographic projection of the retaining wall structure 1022 on the reference plane covers the orthographic projection of the light-shielding layer 1023 on the reference plane, or the orthographic projection of the light-shielding layer 1023 on the reference plane covers the orthographic projection of the retaining wall structure 1022 on the reference plane. Among them, the reference plane can be parallel to the setting surface of each structure in the light-emitting component 10 (the setting surface can be the bearing surface of the substrate).

[0242] 1 and 2 , the retaining wall structure 1022 includes a first portion 1022a located at the edge of the plurality of light-emitting units 101, and a second portion 1022b located between any two adjacent light-emitting units 101. The height of the second portion 1022b is less than the height of the first portion 1022a, and the difference between the height w1 of the first portion 1022a and the height w2 of the second portion 1022b can be 10% to 90% of the thickness of the light-emitting unit 101.

[0243] Since the light-emitting unit 101 and the color conversion component 102 of the light-emitting component 10 are connected by bonding, if the height of the second portion 1022b located between any two adjacent light-emitting units 101 is high, a gap will be formed between the side wall of the second portion 1022b and the light-emitting unit 101 after the bonding connection, which may lead to the risk of light leakage.

[0244] By making the height w2 of the second portion 1022b smaller than the height w1 of the first portion 1022a, a gap between the sidewall of the second portion 1022b and the light emitting unit 101 after bonding can be avoided, thereby reducing the risk of light leakage.

[0245] Furthermore, the first portion 1022a of the retaining wall structure 1022 needs to wrap around the periphery of the filling layer 106 (conductive material), and in the direction Y perpendicular to the thickness direction X, the length w3 of the first portion 1022a extending beyond the filling layer 106 is greater than 0.5 μm.

[0246] In the embodiment of the present application, the common electrode layer 103 can be a transparent conductive film layer. For example, the material of the common electrode layer 103 can be indium tin oxide (ITO), or can be other transparent conductive materials such as indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO). The main function of the common electrode layer 103 is to connect the first semiconductor layer 1011 of at least two light-emitting units 101 and provide a charging interface for the light-emitting units 101. In addition, the thickness of the common electrode layer 103 ranges from 200 angstroms to 1000 angstroms.

[0247] Optionally, the light-emitting component 10 further includes a second encapsulation layer (not shown in the figure) located between the common electrode layer 103 and the color conversion component 102. The material of the second encapsulation layer can be one or more of aluminum oxide (AlO3), silicon oxide (SiO), and silicon nitride (SiNx). In addition, the second encapsulation layer can be prepared by atomic layer deposition (ALD), plasma enhanced chemical vapor deposition (PECVD), or sol-gel method. The thickness of the second encapsulation layer generally does not exceed 2 μm, which is relatively thin and is not shown in the figure.

[0248] In the embodiment of the present application, the distance d1 between the end of the first electrode 104 away from the common electrode layer 103 and the common electrode layer 103, and the distance between the common electrode layers, is greater than or equal to the span h2 of the first encapsulation layer 105 in the thickness direction X. In other words, the end of the first electrode 104 away from the common electrode layer 103 may protrude beyond the end of the first encapsulation layer 105 away from the common electrode layer 103. Alternatively, the end of the first electrode 104 away from the common electrode layer 103 and the end of the first encapsulation layer 105 away from the common electrode layer 103 may be flush.

[0249] In the thickness direction X of the light-emitting layer 1012, the relationship between the distance h1 between the first electrode 104 and the common electrode layer and the span h2 of the first encapsulation layer 105 in the thickness direction X satisfies: the ratio of h1 to h2 ranges from 0.1 to 0.9. Preferably, the ratio of h1 to h2 ranges from 0.4 to 0.8, for example, the ratio of h1 to h2 ranges from 0.6.

[0250] In Scheme 1 and Scheme 2, the span h2 of the first encapsulation layer 105 in the thickness direction X is greater than the distance h1 between the first electrode 104 and the common electrode layer. On the one hand, this can ensure the bonding ability between the first electrode 104 and the second semiconductor layer 1013, and on the other hand, it can avoid light leakage at the edge of the light-emitting area of ​​the light-emitting unit 101.

[0251] In the embodiment of the present application, since the light-emitting unit 101 needs to sequentially form an N-type doped layer, a light-emitting layer, and a P-type doped layer on the sapphire substrate during the preparation process, if the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer, then in order to make the first semiconductor layer 1011 closer to the color conversion component 102 relative to the second semiconductor layer 1013, the light-emitting unit 101 and the color conversion component 102 provided on the sapphire substrate can be directly bonded together, and then the sapphire substrate can be peeled off from one side of the N-type doped layer, and finally the light-emitting unit 101 and the driving unit 112 can be bonded together. In this case, the first semiconductor layer 1011 (P-type doped layer) of at least two light-emitting units 101 can be connected through the common electrode layer 103.

[0252] When the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer, the first implementation method can realize a common anode through the common electrode layer 103. Accordingly, the first electrode 104 is electrically connected to the N-type doped second semiconductor layer 1013, and the first electrode 104 can be called an N-type electrode; the second electrode is electrically connected to the P-type doped first semiconductor layer 1011, and the second electrode can be called a P-type electrode. Optionally, the first semiconductor layer 1011 may include P-type doped gallium nitride (GaN), and the first semiconductor layer 1011 is denoted as P-GaN. The second semiconductor layer 1013 may include N-type doped gallium nitride (GaN), and the second semiconductor layer 1013 is denoted as N-GaN.

[0253] If the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer, then in order to position the first semiconductor layer 1011 closer to the color conversion component 102 relative to the second semiconductor layer 1013, the first semiconductor layer 1011, the light-emitting layer 1012, and the second semiconductor layer 1013 must first be transferred to an intermediate substrate, such that the second semiconductor layer 1013, the light-emitting layer 1012, and the first semiconductor layer 1011 are stacked sequentially in a direction away from the intermediate substrate. The light-emitting unit 101 and the color conversion component 102 are then bonded together, the intermediate substrate is removed from the P-type doped layer, and finally, the light-emitting unit 101 and the driver unit 112 are bonded together. This allows the first semiconductor layer 1011 (N-type doped layer) of at least two light-emitting units 101 to be connected via the common electrode layer 103.

[0254] When the first semiconductor layer 1011 is N-type doped and the second semiconductor layer 1013 is P-type doped, the first implementation method can realize a common cathode through the common electrode layer 103. Accordingly, the first electrode 104 is electrically connected to the P-type doped second semiconductor layer 1013, and the first electrode 104 can be called a P-type electrode; the second electrode is electrically connected to the N-type doped first semiconductor layer 1011, and the second electrode can be called an N-type electrode. Optionally, the first semiconductor layer 1011 includes N-type doped gallium nitride (GaN), and the first semiconductor layer 1011 is denoted as N-GaN. The second semiconductor layer 1013 includes P-type doped gallium nitride (GaN), and the second semiconductor layer 1013 is denoted as P-GaN.

[0255] However, the solution in which the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer requires an additional transfer (to the intermediate substrate) compared to the solution in which the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer, resulting in lower production efficiency. Therefore, in this implementation, a preferred solution may be: the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer.

[0256] As another optional implementation, for each light-emitting unit 101, the first encapsulation layer 105 exposes the second semiconductor layer 1013 of the light-emitting unit 101 on a side away from the color conversion portion 1021, thereby enabling electrical connection between the second semiconductor layer 1013 and the first electrode 104. In other words, the first encapsulation layer 105 serves only to protect the sidewalls of the light-emitting unit 101 and does not insulate the second semiconductor layer 1013 and the first electrode 104 from each other.

[0257] The distance between the end of the first encapsulation layer 105 near the color conversion portion 1021 and the color conversion portion 1021 is shorter than the distance between the surface of the first semiconductor layer 1011 near the color conversion portion 1021 and the color conversion portion 1021. In other words, in the thickness direction X, the first encapsulation layer 105 has a portion that protrudes beyond the first semiconductor layer 1011. This protruding portion and the first semiconductor layer 1011 can form a groove. Furthermore, the surface of the first encapsulation layer 105 away from the color conversion portion 1021 and the side of the second semiconductor layer 1023 away from the color conversion portion 1021 are coplanar.

[0258] In the embodiment of the present application, the common electrode layer 103 includes a first electrode region and a second electrode region. The first electrode region is located within the groove defined by the first encapsulation layer and the first semiconductor layer 1021, and the second electrode region is disposed around the first electrode region. In other words, the common electrode layer 103 can be located within or outside the groove.

[0259] First encapsulation layer 105 is also located between any two adjacent light-emitting units 101. Because the film layers of light-emitting units 101 are not present between the two adjacent light-emitting units 101, the portion of first encapsulation layer 105 located between the two adjacent light-emitting units 101 is further away from color conversion component 102 than the portion surrounding the sidewalls of light-emitting units 101. Therefore, a target region can be formed between any two adjacent light-emitting units 101, between first encapsulation layer 105 and color conversion component 102.

[0260] Furthermore, referring to FIG3 , the light-emitting assembly 10 further includes a blocking portion 108 surrounding at least the sidewalls of the light-emitting unit 101. The blocking portion 108 is located at least in the target area and can be used to absorb or reflect light emitted by the light-emitting unit 101. The blocking portion 108 surrounding the sidewalls of the light-emitting unit 101 is located on a side of the first encapsulation layer 105 away from the light-emitting unit 101.

[0261] Optionally, the light emitting assembly 10 includes a plurality of blocking portions 108, each blocking portion 108 at least surrounding a side wall of a corresponding light emitting unit 101. Any two adjacent blocking portions 108 are spaced apart.

[0262] 3 to 5 , since two adjacent blocking portions 108 are spaced apart, the light emitting assembly 10 further includes a bonding layer 109 located between the blocking portions 108. The bonding layer 109 can fill the unfilled target area in the blocking portion 108, thereby preventing the first encapsulation layer 105 from collapsing.

[0263] The side of the blocking portion 108 that is away from the color conversion component 102 is coplanar with the side of the first encapsulation layer 105 located on the sidewall of the light-emitting unit 101 that is away from the color conversion component 102. Alternatively, the side of the blocking portion 108 that is away from the color conversion component 102 and the side of the first encapsulation layer 105 that is located on the sidewall of the light-emitting unit 101 that is away from the color conversion component 102 can be polished using the same polishing process. The blocking portion 108 in this structure can be annular.

[0264] Alternatively, the material of the barrier portion 108 is metal. The barrier portion 108 is also located on a side of the second semiconductor layer 1023 away from the color conversion portion 1021 and is electrically connected to the second semiconductor layer 1023. The barrier portion 108 of this structure may be a bowl-shaped structure.

[0265] The bowl-shaped barrier 108 may be a first electrode. Alternatively, the barrier 108 may be located on a side of the first electrode 104 away from the second semiconductor layer 1023, and may be electrically connected to the second semiconductor layer 1023 via the first electrode 104. Alternatively, the barrier 108 may be located between the first electrode 104 and the second semiconductor layer 1023, and may be electrically connected to the second semiconductor layer 1023 and the first electrode 104, respectively.

[0266] In the third embodiment, referring to FIG3 , the light-emitting component 10 further includes a planar layer 110 positioned between the common electrode layer 103 and the color conversion component 102. The planar layer 110 may fill the groove defined by the first encapsulation layer 105 and the first semiconductor layer 1021, and the surface of the planar layer 110 facing away from the light-emitting unit 101 may be a flat surface.

[0267] Optionally, it should be noted that the first encapsulation layer 105 and the first semiconductor layer 1011 may define a plurality of grooves, and the planarization layer 110 may fill some or all of the grooves. Furthermore, the planarization layer 110 may be located on a side of the second electrode region of the common electrode layer 103 away from the light-emitting unit 101, that is, above the portion of the common electrode layer 103 outside the grooves.

[0268] In the embodiment of the present application, referring to FIG3 , the retaining wall structure 1022 forms a plurality of first accommodation spaces, each of which exposes the light-emitting area of ​​a light-emitting unit 101. The color conversion portion 1021 is located at least within the first accommodation space and is used to convert the color of the light emitted by the light-emitting unit 101. Since the flat layer 110 is disposed on the side of the common electrode layer 103 away from the light-emitting unit 101, when the color conversion assembly 102 is subsequently formed, the color conversion portion 1021 in the color conversion assembly 102 can be located on the flat surface of the flat layer 110 away from the common electrode layer 103, ensuring uniformity of the same color conversion portion 1021 at different locations and thus ensuring the performance of the color conversion portion 1021.

[0269] Furthermore, because the distance h3 between the first electrode 104 and the common electrode layer 103 in the thickness direction X is smaller than the span h4 of the first encapsulation layer 105 in the thickness direction, the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101, and the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105, are not flat. Optionally, in the thickness direction X, the distance between the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101 and the first electrode 104 is smaller than the distance between the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105 and the first electrode 104.

[0270] Furthermore, the first encapsulation layer 105 may form a plurality of grooves (not shown), which may be located in the region where the common electrode layer 103 and the first semiconductor layer 1011 of the light-emitting unit 101 are connected. This allows a portion of the planar layer 110 on the side of the common electrode layer 103 away from the light-emitting unit 101 to be located within the grooves, while another portion is located outside the grooves and is flattened, ensuring that the planar layer 110 fits tightly within the grooves and maintains its flatness.

[0271] 3 , the light shielding layer 1023 forms a plurality of second accommodation spaces, each of which can correspond to a corresponding first accommodation space. The filter portion 1024 is located at least within the second accommodation space and is configured to transmit light converted by the color conversion portion 1021 .

[0272] Among them, the relevant designs of the color conversion unit 1021 and the filtering unit 1024 can refer to the specific description in the first embodiment, and will not be repeated here in this embodiment of the application.

[0273] In the embodiment of the present application, the specific design pattern of the light shielding layer 1023 can be determined based on the design pattern of the light emitting unit 101, and this embodiment of the present application does not specifically limit this. The material of the light shielding layer 1023 can be a conventional resin-type negative photoresist BM material, and the width of the second receiving space formed by the light shielding layer 1023 can range from 1 μm to 15 μm. The thickness of the light shielding layer 1023 can range from 0.5 μm to 5 μm.

[0274] The filter portion 1024 can be made of a conventional resin negative photoresist material, and there is no special requirement for the process sequence of the filter portions 1024 of different colors. The thickness of the filter portion 1024 can be the same as that of the light shielding layer 1023, and the thickness range can be 0.5 μm to 5 μm.

[0275] The material of the retaining wall structure 1022 can be an opaque material. The opaque material can be a light-absorbing material or a light-reflecting material, or a material having both light-absorbing and light-reflecting properties. For example, the material of the retaining wall structure 1022 can be a resin-type negative resist BM material.

[0276] And the height of the retaining wall structure 1022 can be greater than 1 μm, and there is no upper limit. The retaining wall structure 1022 and the light-shielding layer 1023 can be made of the same material or different materials. There are no special requirements for the covering relationship between the orthographic projection of the retaining wall structure 1022 on the reference plane and the orthographic projection of the light-shielding layer 1023 on the reference plane. For example, the orthographic projection of the retaining wall structure 1022 on the reference plane covers the orthographic projection of the light-shielding layer 1023 on the reference plane, or the orthographic projection of the light-shielding layer 1023 on the reference plane covers the orthographic projection of the retaining wall structure 1022 on the reference plane. Among them, the reference plane can be parallel to the setting surface of each structure in the light-emitting component 10.

[0277] In the embodiment of the present application, the retaining wall structure 1022 and the light shielding layer 1023 can be manufactured using a single process. For example, the retaining wall structure 1022 and the light shielding layer 1023 are both made of a resin-based negative resist. The total thickness of the retaining wall structure 1022 and the light shielding layer 1023 ranges from 1 μm to 0 μm. The thickness of the color conversion portion 1021 ranges from 1 μm to 15 μm, and the thickness of the filter portion 1024 ranges from 1 μm to 5 μm.

[0278] In the embodiment of the present application, the common electrode layer 103 may be a transparent conductive film layer. For example, the material of the common electrode layer 103 may be ITO, or other transparent conductive materials such as IZO or IGZO. The main function of the common electrode layer 103 is to connect the first semiconductor layers 1011 of at least two light-emitting units 101 and provide a charging interface for the light-emitting units 101. In addition, the thickness of the common electrode layer 103 ranges from 200 angstroms to 1000 angstroms.

[0279] Optionally, referring to FIG3 , the light-emitting assembly 10 further includes a third encapsulation layer 111 located on a side of the color conversion assembly 102 away from the light-emitting unit 101. The material of the third encapsulation layer 111 can be an inorganic material. For example, the third encapsulation layer 111 can be a single layer or a stacked structure of SiNx, SiOx, AlO3, or titanium oxide (TiOx). Alternatively, the third encapsulation layer 111 can include an organic material film layer prepared by inkjet printing (IJP).

[0280] 3 , the third encapsulation layer 111 can wrap the edges of the plurality of light-emitting units 101 to achieve overall encapsulation of the plurality of light-emitting units 101 , thereby preventing related structures in the light-emitting component 10 from being exposed and corroded, and ensuring the yield of the light-emitting component 10 .

[0281] In this third solution, the light-emitting unit 101 and the driving unit 112 are first bonded together, and then the common electrode layer 103, the planar layer 110, and the color conversion component 102 are formed on the side of the light-emitting unit 101 away from the driving unit 112. The common electrode layer 103 formed in this manner has a target portion M that extends beyond the boundary of the first encapsulation layer 105, allowing the second electrode (not shown) to be directly electrically connected to the target portion M, thereby achieving electrical connection between the second electrode and the first semiconductor layer 1011.

[0282] In addition, this solution can complete the preparation of the color conversion component 102 on the substrate where the driving unit is located, realize full-color display, and do not require a large amount of transfer process, reduce the probability of sidewall leakage and crosstalk leakage between adjacent light-emitting units, improve production efficiency and yield, and reduce production costs.

[0283] In the light-emitting component 10 shown in Figure 3, the blocking portion 108 can be a ring-shaped structure, each blocking portion 108 can surround the side wall of a light-emitting unit 101, and each blocking portion 108 can expose the second semiconductor layer 1013 of a light-emitting unit 101, and the second semiconductor layer 1013 and the first electrode 104 can be in direct contact and electrically connected.

[0284] Since the second semiconductor layer 1013 and the first electrode 104 are directly electrically connected rather than indirectly connected through other conductive structures, the transmission characteristic of the first driving signal from the first electrode 104 to the second semiconductor layer 1013 can be guaranteed, and the product yield is high.

[0285] In the embodiment of the present application, the distance d2 between the surface of the planar layer 110 away from the common electrode layer 103 and the first electrode 104 is greater than or equal to the span h4 of the first encapsulation layer 105 in the thickness direction X. In other words, the surface of the planar layer 110 away from the common electrode layer 103 may protrude beyond the end of the first encapsulation layer 105 away from the common electrode layer 103. Alternatively, the surface of the planar layer 110 away from the common electrode layer 103 may be flush with the end of the first encapsulation layer 105 away from the common electrode layer 103.

[0286] In the thickness direction X of the light-emitting layer 1012, the relationship between the distance h3 between the first electrode 104 and the common electrode layer and the span h4 of the first encapsulation layer 105 in the thickness direction X satisfies: the ratio of h3 to h4 ranges from 0.1 to 0.9. Preferably, the ratio of h3 to h4 ranges from 0.3 to 0.7, for example, the ratio of h3 to h4 ranges from 0.5.

[0287] In solution three, the span h4 of the first encapsulation layer 105 in the thickness direction X is greater than the distance h3 between the first electrode 104 and the common electrode layer, and the planar layer 110 fills the groove. This ensures the bonding between the planar layer 110 and the first semiconductor layer 1011, while also providing a flat surface for the subsequent formation of the light conversion assembly 102. This ensures the stability of forward light emission from the light-emitting region of the light-emitting unit 101 and prevents light leakage from the edges of the light-emitting region of the light-emitting unit 101.

[0288] In the fourth solution, referring to FIG4 , the light-emitting component 10 is not provided with the planar layer 110, and the color conversion component 102 can be formed directly on the side of the common electrode layer 103 away from the light-emitting unit 101. In other words, at least a portion of the color conversion component 1021 can be located within the groove formed by the first encapsulation layer 105 and the first semiconductor layer 1021, and the color conversion component 1021 is located on the side of the common electrode layer 103 away from the light-emitting unit 101.

[0289] Because the distance h5 between the first electrode 104 and the common electrode layer 103 in the thickness direction X is smaller than the span h6 of the first encapsulation layer 105 in the thickness direction X, the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101, and the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105 are not flat. Optionally, in the thickness direction X, the distance between the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101 and the first electrode 104 is smaller than the distance between the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105 and the first electrode 104.

[0290] Furthermore, the first encapsulation layer 105 and the first semiconductor layer 1021 may define a plurality of grooves, which may be located in the region where the common electrode layer 103 and the first semiconductor layer 1011 of the light-emitting unit 101 are connected. This allows a portion of the color conversion portion 1021 in the color conversion component 102 to be directly filled within the grooves.

[0291] In an embodiment of the present application, referring to Figure 4, the retaining wall structure 1022 constitutes a plurality of first accommodating spaces, each first accommodating space exposes a light-emitting area of ​​the light-emitting unit 101, and the color conversion portion 1021 is located not only in the groove portion, but also in the first accommodating space of the retaining wall structure 1022. The color conversion portion 1021 is used to convert the color of the light emitted by the light-emitting unit 101.

[0292] Furthermore, the related designs of the retaining wall structure 1022, the color conversion part 1021, the light shielding layer 1023, the filter part 1024, the common electrode layer 103, and the third packaging layer 111 in the fourth solution can refer to the above-mentioned third solution, and the embodiments of the present application will not be repeated here.

[0293] In this fourth solution, the light-emitting unit 101 and the driving unit 112 are first bonded together, and then the common electrode layer 103 and the color conversion component 102 are formed on the side of the light-emitting unit 101 away from the driving unit 112. The common electrode layer 103 formed in this manner has a target portion M that extends beyond the boundary of the first encapsulation layer 105, allowing the second electrode (not shown) to be directly electrically connected to the target portion M, thereby achieving electrical connection between the second electrode and the first semiconductor layer 1011.

[0294] In addition, this solution can complete the preparation of the color conversion component 102 on the substrate where the driving unit is located, realize full-color display, and do not require a large amount of transfer process, reduce the probability of side wall leakage and crosstalk leakage between adjacent light-emitting units, improve production efficiency and yield, and reduce production costs.

[0295] In the light-emitting component 10 shown in FIG4 , the blocking portion 108 may be a bowl-shaped structure, and each blocking portion 108 may surround the sidewall of a light-emitting unit 101 and cover the second semiconductor layer 1013 of a light-emitting unit 101. Each blocking portion 108 may be made of a conductive material, and the second semiconductor layer 1013 of each light-emitting unit 101 is electrically connected to the first electrode 104 via a blocking portion 108 .

[0296] Optionally, the blocking portion 108 can be an opaque (for example, black) metal material, which covers the second semiconductor layer 1013 of the light-emitting unit 101. The opaque metal material can be used to block light, thereby preventing the light emitted by the light-emitting unit 101 from being emitted from one side of the second semiconductor layer 1013, thereby preventing light leakage.

[0297] Optionally, the material of the barrier portion 108 can be an opaque metal such as copper (Cu), nickel (Ni), aluminum (Al), titanium (Ti), or gold (Au).

[0298] It should be noted that since the light emitted by each light-emitting unit 101 may crosstalk to an adjacent light-emitting unit 101 along the common film layer of the multiple light-emitting units 101 (regardless of whether the common film layer is conductive), in order to prevent the light emitted by the light-emitting unit 101 from crosstalking to an adjacent light-emitting unit 101 along the first encapsulation layer 105, with reference to FIG4 , the first encapsulation layer 105 includes a plurality of independent encapsulation patterns 1051. Each encapsulation pattern 1051 surrounds the sidewall of a light-emitting unit 101 and exposes the second semiconductor layer 1013 of a light-emitting unit 101.

[0299] In the fifth embodiment, referring to FIG5 , the light-emitting component 10 is not provided with the planar layer 110, and the retaining wall structure 1022 and the light-shielding layer 1023 are both located on the side of the common electrode layer 103 closest to the plurality of light-emitting units 101. In other words, the common electrode layer 103 is formed after the retaining wall structure 1022 and the light-shielding layer 1023 are formed, and the color conversion portion 1021 and the light filter portion 1024 are formed directly on the side of the common electrode layer 103 away from the light-emitting units 101.

[0300] Because the distance h5 between the first electrode 104 and the common electrode layer 103 in the thickness direction X is smaller than the span h6 of the first encapsulation layer 105 in the thickness direction X, the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101, and the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105 (this portion is located above the light-shielding layer 1023) are not flat. Optionally, in the thickness direction X, the distance between the portion where the common electrode layer 103 is connected to the first semiconductor layer 1011 of the light-emitting unit 101 and the first electrode 104 is smaller than the distance between the portion of the common electrode layer 103 located between two adjacent light-emitting units 101 in the first encapsulation layer 105 and the first electrode 104.

[0301] Furthermore, the first encapsulation layer 105 and the first semiconductor layer 1021 may define a plurality of grooves, which may be located in the region where the common electrode layer 103 and the first semiconductor layer 1011 of the light-emitting unit 101 are connected. This allows a portion of the color conversion portion 1021 in the color conversion component 102 to be directly filled within the grooves.

[0302] In the embodiment of the present application, referring to FIG. 5 , the color conversion portion 1021 and the light filtering portion 1024 may be located in a third accommodation space formed by the retaining wall structure 1022 and the light shielding layer 1023 .

[0303] Furthermore, other related designs of the retaining wall structure 1022, color conversion part 1021, shading layer 1023, filter part 1024, common electrode layer 103, and third packaging layer 111 in scheme five can refer to the above-mentioned scheme three, and the embodiments of this application will not be repeated here.

[0304] In this fifth solution, the light-emitting unit 101 and the driving unit 112 are first bonded together, and then a retaining wall structure 1022, a light-shielding layer 1023, a common electrode layer 103, a color conversion portion 1021, and a filter portion 1024 are formed on the side of the light-emitting unit 101 away from the driving unit 112. The common electrode layer 103 formed in this manner has a target portion M that extends beyond the boundary of the first encapsulation layer 105, thereby enabling the second electrode to be directly electrically connected to the target portion M, thereby achieving electrical connection between the second electrode and the first semiconductor layer 1011.

[0305] In the light-emitting component 10 shown in FIG5 , the blocking portion 108 may be a bowl-shaped structure, and each blocking portion 108 may surround the sidewall of a light-emitting unit 101 and cover the second semiconductor layer 1013 of a light-emitting unit 101. The material of each blocking portion 108 may be a conductive material, and the second semiconductor layer 1013 of each light-emitting unit 101 is electrically connected to the first electrode 104 via a blocking portion 108.

[0306] Optionally, the blocking portion 108 can be an opaque (for example, black) metal material, which covers the second semiconductor layer 1013 of the light-emitting unit 101. The opaque metal material can be used to block light, thereby preventing the light emitted by the light-emitting unit 101 from being emitted from one side of the second semiconductor layer 1013, thereby preventing light leakage.

[0307] Optionally, the material of the barrier portion 108 can be an opaque metal such as copper (Cu), nickel (Ni), aluminum (Al), titanium (Ti), or gold (Au).

[0308] It should be noted that, because the light emitted by each light-emitting unit 101 may crosstalk to adjacent light-emitting units along the common film layer of multiple light-emitting units 101 (regardless of whether the common film layer is conductive), the light emitted by the light-emitting unit 101 may also crosstalk to adjacent light-emitting units 101 along the common electrode layer 103. By arranging the retaining wall structure 1022 and the light-shielding layer 1023 on the side of the common electrode layer 103 close to the light-emitting unit 101, the common electrode layer 103 can be arranged to climb at the retaining wall structure 1022 and the light-shielding layer 1023, thereby increasing the total length of the common electrode layer 103, extending the crosstalk path of the light along the common electrode layer 103, and reducing the probability of crosstalk.

[0309] In the embodiment of the present application, the distance d3 between the surface of the color-converting portion 1021 away from the common electrode layer 103 and the first electrode 104 is greater than or equal to the span h6 of the first encapsulation layer 105 in the thickness direction X. In other words, the surface of the color-converting portion 1021 away from the common electrode layer 103 may protrude beyond the end of the first encapsulation layer 105 away from the common electrode layer 103. Alternatively, the surface of the color-converting portion 1021 away from the common electrode layer 103 may be flush with the end of the first encapsulation layer 105 away from the common electrode layer 103.

[0310] In the thickness direction X of the light-emitting layer 1012, the relationship between the distance h5 between the first electrode 104 and the common electrode layer and the span h6 of the first encapsulation layer 105 in the thickness direction X satisfies: the ratio of h5 to h6 ranges from 0.1 to 0.9. Preferably, the ratio of h5 to h6 ranges from 0.3 to 0.7, for example, the ratio of h5 to h6 ranges from 0.5.

[0311] In Solutions 4 and 5, the span h6 of the first encapsulation layer 105 in the thickness direction X is greater than the distance h5 between the first electrode 104 and the common electrode layer, and the color conversion portion 1021 is filled within the groove. This ensures the bonding between the color conversion portion 1021 and the first semiconductor layer 1011 while also avoiding the increased thickness of the entire device caused by the planarization layer 110, facilitating thinning.

[0312] In the embodiment of the present application, during the fabrication process of the light-emitting unit 101, an N-type doped layer, a light-emitting layer 1012, and a P-type doped layer are sequentially formed on a sapphire substrate. If the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer, to position the first semiconductor layer 1011 closer to the color conversion component 102 than the second semiconductor layer 1013, the light-emitting unit 101 and the driver unit 112 disposed on the sapphire substrate can be directly bonded together, and then the sapphire substrate can be peeled away from the N-type doped layer. Subsequently, a common electrode layer 103, a color conversion component 102, and a color filter layer 108 are formed on the side of the light-emitting unit 101 away from the driver unit 112. This allows the first semiconductor layers 1011 (N-type doped layers) of at least two light-emitting units 101 to be connected via the common electrode layer 103.

[0313] When the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer, the schemes three to five can realize a common cathode through the common electrode layer 103. Accordingly, the first electrode 104 is point-connected to the P-type doped second semiconductor layer 1013, and the first electrode 104 can be called a P-type electrode; the second electrode is electrically connected to the N-type doped first semiconductor layer 1011, and the second electrode can be called an N-type electrode. Optionally, the first semiconductor layer 1011 includes N-type doped gallium nitride (GaN), and the first semiconductor layer 1011 is recorded as N-GaN. The second semiconductor layer 1013 includes P-type doped gallium nitride (GaN), and the second semiconductor layer 1013 is recorded as P-GaN.

[0314] If the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer, to position the first semiconductor layer 1011 closer to the color conversion element 102 relative to the second semiconductor layer 1013, the first semiconductor layer 1011, the light-emitting layer 1012, and the second semiconductor layer 1013 must first be transferred to an intermediate substrate, with the second semiconductor layer 1013, the light-emitting layer 1012, and the first semiconductor layer 1011 stacked sequentially in a direction away from the intermediate substrate. The light-emitting unit 101 and the driver unit 112 are then bonded together, and the intermediate substrate is then peeled off from the P-type doped layer side. Finally, the common electrode layer 103, the color conversion element 102, and the color filter layer 108 are formed on the side of the light-emitting unit 101 away from the driver unit 112. This allows the first semiconductor layer 1011 (P-type doped layer) of at least two light-emitting units 101 to be connected via the common electrode layer 103.

[0315] When the first semiconductor layer 1011 is P-type doped and the second semiconductor layer 1013 is N-type doped, the second implementation method can realize a common anode through the common electrode layer 103. Accordingly, the first electrode 104 is electrically connected to the N-type doped second semiconductor layer 1013, and the first electrode 104 can be called an N-type electrode; the second electrode is electrically connected to the P-type doped first semiconductor layer 1011, and the second electrode can be called a P-type electrode. Optionally, the material of the first semiconductor layer 1011 can be P-type gallium nitride (GaN), and the first semiconductor layer 1011 is denoted as P-GaN. The material of the second semiconductor layer 1013 can be N-type gallium nitride (GaN), and the second semiconductor layer 1013 is denoted as N-GaN.

[0316] However, the solution in which the first semiconductor layer 1011 is a P-type doped layer and the second semiconductor layer 1013 is an N-type doped layer requires an additional transfer (to the intermediate substrate) compared to the solution in which the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer, resulting in lower production efficiency. Therefore, in this implementation, a preferred solution may be: the first semiconductor layer 1011 is an N-type doped layer and the second semiconductor layer 1013 is a P-type doped layer.

[0317] In the embodiment of the present application, the N-type doped layer (N-GaN) of the light-emitting unit 101 can be obtained by doping silicon (Si) into a buffer layer (GaN) formed on a sapphire substrate, denoted as GaN:Si. The thickness of the buffer layer does not exceed 10 μm, and the thickness of the N-type doped layer does not exceed 1 μm. The N-type doped layer also includes a superlattice layer (indium gallium nitride / gallium nitride, InGaN / GaN) for improving the lattice quality. The thickness of the superlattice layer ranges from 10 nm (nanometers) to 1 μm.

[0318] The light-emitting layer 1012 of the light-emitting unit 101 may be a multiple quantum well (MQW), which may be a stacked pair of InGaN and GaN, with the number of stacked pairs ranging from 4 to 20 and the thickness of each layer ranging from 1 nm to 50 nm.

[0319] The P-type doped layer (P-GaN) of the light emitting unit 101 may be obtained by doping magnesium (Mg) into gallium nitride (GaN), and the thickness ranges from 100 angstroms to 5 μm.

[0320] Furthermore, the light-emitting unit 101 may also include: a P-type electron blocking layer located between the light-emitting layer 1012 and the P-type doped layer, the function of which is to block electrons from passing directly, the material of which is aluminum gallium nitride (AlGaN), and the thickness ranges from 1 nm to 1 μm.

[0321] The light emitting unit 101 may further include: a current spreading layer located on a side of the P-type doped layer away from the light emitting layer 1012 . The material of the current spreading layer may be indium tin oxide (ITO) and the thickness may range from 10 nm to 1 μm.

[0322] In the embodiment of the present application, referring to Figures 3 to 5, the driving unit 112 included in the light-emitting component 10 is located on a side of the multiple light-emitting units 101 away from the color conversion component 102. The driving unit 112 is used to drive the light-emitting units 101 to emit light, and the first electrode and the common electrode layer are electrically connected to the driving unit 112 respectively.

[0323] The driving unit 112 includes a third electrode 1121 , which is used to introduce an external signal, such as a first driving signal or a second driving signal.

[0324] Furthermore, the driving unit 112 further includes a plurality of driving circuits 1122 corresponding to the plurality of light-emitting units 101. A third electrode 1121 is located on a side of the driving unit 112 facing the light-emitting unit 101, and the third electrode 1121 is electrically connected to the driving circuit 1122. In addition, the driving unit 112 may further include a fourth electrode 1123 (as shown in FIG. 6 ), which may be electrically connected to the second electrode 107.

[0325] Figure 6 is a schematic diagram of the structure of a drive unit provided in an embodiment of the present application. Referring to Figure 6 , it can be seen that drive unit 112 also includes a substrate 1124, a connection structure 1125, and pins 1126. Substrate 1124 can be made of polyimide (PI) and can be referred to as a PI substrate. Substrate 1124 has connection vias, and connection structure 1125 is located within the connection vias.

[0326] 6 , the driving circuit 1122 is located on one side of the substrate 1124, and the pins 1126 are located on a side of the substrate away from the driving circuit 1122. The pins 1126 are in contact with the connection structure 1125. The pins 1126 and the driving circuit 1122 are connected via the connection structure 1125, so that the pins 1126 transmit driving signals to the driving circuit 1122 via the connection structure 1125.

[0327] In the embodiment of the present application, the material of the pin 1126 may include a conductive material, such as a metal. Optionally, the pin 1126 includes a first metal layer and a second metal layer stacked together. The first metal layer is located between the second metal layer and the driver unit 112, that is, the first metal layer is closer to the driver unit 112 than the second metal layer.

[0328] The material of the first metal layer includes nickel (Ni), and the material of the second metal layer includes gold (Au). For example, the material of the first metal layer is nickel, and the material of the second metal layer is gold.

[0329] Through the design of the pins in the embodiment of the present application, when fixing the light-emitting component 10 and the driving backplane, a welding process can be used to fix the pins to the pads of the driving backplane through a gold deposition process, thereby realizing the connection between the light-emitting component 10 and the driving backplane.

[0330] In an embodiment of the present application, the driving circuit 1122 may include multiple thin-film transistors and at least one storage capacitor. Optionally, the driving circuit 1122 may include seven thin-film transistors and one storage capacitor, that is, the driving circuit 1122 is a 7T1C driving circuit. Alternatively, the driving circuit 1122 may include other numbers of thin-film transistors and other numbers of storage capacitors. The embodiment of the present application does not limit the number of thin-film transistors included in the driving circuit 1122, nor the number of storage capacitors included.

[0331] Each thin film transistor includes a gate, a source, and a drain. The driving circuit 1122 includes multiple thin film transistors that are interconnected to achieve the function of driving the light emitting unit 101 to emit light.

[0332] Optionally, the plurality of thin film transistors include at least a data writing transistor, the source of which is connected to a data line of a driving backplane in the display substrate. The data line can transmit a data driving signal to the driving circuit 1122 through the data writing transistor.

[0333] In an embodiment of the present application, the pin is connected to the source of the data writing transistor in the driving circuit 1122, and the data writing transistor is connected to the third electrode 1121 of the driving unit 112 through other thin film transistors, so that the data line included in the driving backplane in the display substrate transmits the data driving signal to the first electrode 104 of the light-emitting unit 101 through the pin 1126, the driving circuit 1122, and the third electrode 1121 in sequence.

[0334] It should be noted that in order for the driving unit 112 to drive the light-emitting unit 101 to emit light, in addition to providing the data driving signal to the first electrode 104 of the light-emitting unit 101, it is also necessary to provide a power signal (such as a VSS signal) to the second electrode 107 of the light-emitting unit 101.

[0335] Optionally, the power supply signals provided by the driving backplane to the multiple light-emitting components 10 included in the display substrate can be the same, so the power supply signals can be provided to the second electrodes of the light-emitting units 101 in the multiple light-emitting components 10 through pins located in the peripheral area of ​​the display substrate (the pins are not shown in the accompanying drawings).

[0336] 6 , the driver circuit 1122 includes a buffer layer (buffer+barrier) m1, an active layer (poly) m2, a first gate insulator (GI) m3, a first gate layer (gate) m4, a second gate insulator m5, a second gate layer (not shown), an interlayer dielectric (ILD) m6, a source / drain layer m7, and a planarization layer (PLN) m8, which are stacked in sequence on one side of a substrate 1124. The third electrode 1121 and the fourth electrode of the driver unit 112 are located on the side of the planarization layer m8 away from the substrate 1124.

[0337] The buffer layer m1 may be made of silicon oxide (SiOx) with a thickness ranging from 300 angstroms to 5000 angstroms.

[0338] The active layer m2 includes multiple active patterns corresponding to multiple thin-film transistors. Each active pattern includes a source region, a drain region, and a channel region. The source and drain electrodes of the thin-film transistors are located in the source-drain layer, with the source and source regions connected, and the drain and drain regions connected. The active layer m2 can be made of low-temperature polysilicon (p-Si) with a thickness ranging from 430 to 470 angstroms.

[0339] The material of the first gate insulating layer m3 is generally a stack of silicon oxide (SiOx) and silicon nitride (SiNx), or can be a single layer of silicon oxide (SiOx), with a thickness ranging from 1100 angstroms to 1500 angstroms, for example, 1200 angstroms.

[0340] The material of the first gate layer m4 can be molybdenum (Mo), or can be titanium (Ti), a stack of aluminum (Al) and titanium (Ti) (denoted as Ti / Al / Ti). The thickness of the first gate layer m4 can be determined according to circuit simulation requirements and generally does not exceed 4000 angstroms.

[0341] The first gate layer m4 includes a plurality of gate patterns corresponding to a plurality of thin film transistors. The channel region is an overlapping region of an orthographic projection of the gate pattern on the substrate and an orthographic projection of the active pattern on the substrate.

[0342] The material of the interlayer dielectric layer m6 can be a stack of silicon oxide and silicon nitride (denoted as SiOx / SiNx), with a thickness ranging from 4000 angstroms to 6000 angstroms.

[0343] The material of the source / drain layer m7 is a stack of titanium (Ti), aluminum (Al) and titanium (Ti) (denoted as Ti / Al / Ti). The thickness can be determined according to circuit simulation requirements and generally does not exceed 9000 angstroms.

[0344] The material of the flat layer structure layer m8 may be PI resin, and the thickness ranges from 1 μm to 3 μm.

[0345] The third electrode 1121 and the fourth electrode 1122 may be made of copper (Cu), and have a thickness ranging from 8000 angstroms to 3 μm.

[0346] Referring to Figure 6 , the first gate layer m4 also includes a gate connector m41 connected to the connection structure 1125. This gate connector m41 is used to connect to the connection structure and the source of the data write transistor. To connect the connection structure 1125 and the gate connector m41, connection vias can also be provided in the buffer layer m1 and the first gate insulating layer m3. Furthermore, the connection structure is located not only within the connection vias in the substrate 1124, but also within the connection vias in the buffer layer m1 and the first gate insulating layer m3.

[0347] In the embodiment of the present application, referring to FIG6 , the area of ​​the orthographic projection of the pin 1126 on the substrate 1124 is larger than the area of ​​the orthographic projection of the connection structure 1125 on the substrate 1124, and the orthographic projection of the pin 1126 on the substrate 1124 covers the orthographic projection of the connection structure 1125 on the substrate 1124. Thus, the connection area between the pin 1126 and the connection structure 1125 can be made as large as possible, thereby ensuring the reliability of the connection between the pin 1126 and the connection structure 1125. For example, the connection area can be equal to the area of ​​the side of the connection structure 1125 close to the pin 1126.

[0348] In summary, an embodiment of the present application provides a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0349] FIG7 is a flow chart of a method for preparing a light-emitting component according to an embodiment of the present application. FIG8 is a structural flow chart of a method for preparing a light-emitting component according to an embodiment of the present application. FIG9 is a top view flow chart of some steps in a method for preparing a light-emitting component according to an embodiment of the present application. Referring to FIG7 to FIG9, the method includes:

[0350] Step S101: Acquire a first target structure.

[0351] In the embodiment of the present application, the first target structure includes: a first substrate, a plurality of light-emitting units 101 located on the first substrate, a first electrode 104 , a first encapsulation layer 105 , and a filling layer 106 .

[0352] 10 to 12 , the process of acquiring the first target structure includes:

[0353] Step S1011 : forming a buffer film, a second semiconductor film, a light-emitting film, a first semiconductor film and a current spreading film in sequence on a first substrate.

[0354] The first substrate may be a sapphire substrate, the second semiconductor film may be an N-type doped film, and the first semiconductor film may be a P-type doped film. For simplicity, FIG10 only shows the second semiconductor film, the light-emitting film, and the first semiconductor film.

[0355] Step S1012: Etching the second semiconductor film, the light-emitting film, the first semiconductor film and the current spreading film to obtain the second semiconductor layer, the light-emitting layer, the first semiconductor layer and the current spreading layer of the plurality of light-emitting units.

[0356] Referring to FIG. 11 , during the etching process, to ensure complete etching of the second semiconductor film, the buffer film may be overetched to form a buffer layer. The overetching amount of the buffer film may refer to the total thickness of the etched portion of the buffer film, and the overetching amount may be greater than or equal to 50% of the total thickness of the second semiconductor film, the light-emitting film, the first semiconductor film, and the current spreading film.

[0357] Step S1013 : forming a first encapsulation film and a filling film on a side of the plurality of light-emitting units away from the first substrate.

[0358] Referring to Figure 11 , the first encapsulation film may surround the sidewalls of each light-emitting unit 101, cover the first semiconductor layer 1011 in each light-emitting unit 101, and cover the area between two adjacent light-emitting units 101. Furthermore, a filler film may be located on a side of the first encapsulation film located between two adjacent light-emitting units 101 that is away from the first substrate.

[0359] Optionally, the first encapsulation film may be made of one or more of AlO 3 , SiO 3 , and SiN x . Furthermore, the first encapsulation film may be prepared by ALD, PECVD, or sol-gel methods. The thickness of the first encapsulation film ranges from 100 angstroms to 1 μm.

[0360] The material of the filling film can be Cu, Ni, Al, Ti, Au and other opaque metals. The filling film can be a single layer or a composite structure. The thickness of the filling film ranges from 100nm to 10um.

[0361] Step S1014 : Processing the first packaging film and the filling film by a grinding process to obtain a first packaging layer and a filling layer.

[0362] The grinding process can be chemical grinding. Referring to Figures 11 and 12 , the ultimate goal of the grinding is to completely expose the first semiconductor layer 1011 on the side of the second semiconductor layer 1013 away from the first substrate (if a current spreading layer is present, the current spreading layer is exposed), thereby enabling electrical connection between the subsequent common electrode layer 103 and the first semiconductor layer 1011.

[0363] In the embodiment of the present application, the first encapsulation layer 105 obtained after grinding can surround the sidewalls of the light-emitting unit 101 and cover the area between two adjacent light-emitting units 101. The filling layer 106 obtained after grinding can be located on the side of the first encapsulation layer 105 located between two adjacent light-emitting units 101, away from the first substrate. In other words, referring to Figure 12, the filling layer 106 surrounding the sidewalls of adjacent light-emitting units 101 can be a single-piece structure.

[0364] Step S102: Acquire a second target structure.

[0365] In the embodiment of the present application, the second target structure includes: a second substrate, a color conversion component 102 and a common electrode layer 103 located on the second substrate.

[0366] 13 to 15 , the process of acquiring the second target structure includes:

[0367] Step S1021: forming a light shielding layer on one side of the second substrate, and filling a light filter portion into the second receiving space of the light shielding layer.

[0368] The second substrate may be a glass substrate. Referring to Figures 14 and 15 , a light shielding layer 1023 may be formed on one side of the second substrate. Then, referring to Figures 14 and 15 , a light filter 1024 may be filled into the second receiving space of the light shielding layer 1023 .

[0369] Optionally, the filter unit 1024 may include a first filter unit, a second filter unit, and a third filter unit. Each filter unit 1024 may be located within a second receiving space. The first filter unit is configured to transmit light of a second wavelength, the second filter unit is configured to transmit light of a third wavelength, and the third filter unit is configured to transmit light of a fourth wavelength.

[0370] For example, the first filter portion is a red color block, the second filter portion is a green color block, and the third filter portion is a blue color block or a transparent portion.

[0371] Step S1022 : forming a retaining wall structure on a side of the light shielding layer away from the second substrate, and filling the first receiving space of the retaining wall structure with a color conversion portion.

[0372] 14 and 15 , a retaining wall structure 1022 may be formed on a side of the light shielding layer 1023 away from the second substrate; thereafter, referring to FIG. 14 and 15 , a color conversion portion 1021 may be filled in the first accommodation space of the retaining wall structure 1022 .

[0373] The light emitted by the multiple light-emitting units 101 included in the light-emitting assembly 10 can all be of a first wavelength. The color conversion unit 1021 can include a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit can convert light of a first wavelength into light of a second wavelength, the second color conversion unit can convert light of the first wavelength into light of a third wavelength, and the third color conversion unit can convert light of the first wavelength into light of a fourth wavelength.

[0374] For example, the color of the light of the first wavelength can be blue, that is, the multiple light-emitting units 101 are all blue light-emitting units. The color of the light of the second wavelength can be red, and the first color conversion unit can convert the blue light of the first wavelength into red light of the second wavelength. The color of the light of the third wavelength can be green, and the second color conversion unit can convert the blue light of the first wavelength into green light of the third wavelength. The color of the light of the fourth wavelength can be blue, and the third color conversion unit can convert the blue light of the first wavelength into blue light of the fourth wavelength. The first wavelength and the fourth wavelength can be equal or unequal.

[0375] For example, assuming the first wavelength and the fourth wavelength are equal, the first color conversion portion may include red quantum dots (QDs), and the second color conversion portion may include green quantum dots. The third color conversion portion may be a transparent portion that can be used to transmit the light of the first wavelength emitted by the light-emitting unit 101. For example, the material of the transparent portion may be transparent optical adhesive (OC).

[0376] Optionally, referring to Figure 14, the angle α between the side wall of the retaining wall structure 1022 and the supporting surface of the second substrate can be less than 90°, so that the color conversion part will not fall out of the first accommodating space after the color conversion part is subsequently filled and the entire structure is flipped.

[0377] Step S1023 : forming a common electrode layer on a side of the retaining wall structure and the color conversion portion away from the second substrate.

[0378] Referring to Figures 14 and 15 , a common electrode layer 103 can be formed over the entire surface. The thickness of this common electrode layer 103 ranges from 200 angstroms to 1000 angstroms, and the material can be a transparent conductive material such as ITO, IZO, or IGZO. The primary purpose of this common electrode layer 103 is to provide a charging interface for the first semiconductor layer 1011 of the multiple light-emitting units 101.

[0379] Step S103 : Bonding the first target structure to the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion.

[0380] In the embodiment of the present application, after bonding, the first semiconductor layers 1011 and the common electrode layer 103 of the plurality of light emitting units 101 are electrically connected. In addition, the second semiconductor layers 1012 of the light emitting units 101 are further away from the second substrate than the first semiconductor layers 1011 .

[0381] The opening area of ​​the color conversion component 102 may refer to the area where the color conversion portion 1021 or the transparent portion is disposed, and the opening area of ​​the color filter layer 108 may refer to the area where the filter portion 1024 is disposed.

[0382] Figure 9 is a top view flow chart of a bonding process according to an embodiment of the present application. Referring to Figure 9 , since the second substrate is a transparent glass substrate, the light shielding layer 1023 and the filter unit 1024 can be seen in the top view. Specifically, three filter units 1024 are shown in Figure 9 .

[0383] For simplicity, Figure 8 illustrates only two of the light-emitting units 101, two color conversion units 1021, and two filter units 1024 in Figure 9. After the first target structure and the second target structure are bonded together, the first light-emitting unit corresponds to the first color conversion unit and the first filter unit, and the second light-emitting unit corresponds to the second color conversion unit and the second filter unit.

[0384] Thus, the light emitted by the first light emitting unit can first undergo color conversion by the first color conversion unit, and then the color-converted light can be emitted through the first filter unit. The light emitted by the second light emitting unit can first undergo color conversion by the second color conversion unit, and then the color-converted light can be emitted through the second filter unit.

[0385] Step S104 : peeling the first substrate from the second semiconductor layer of the plurality of light-emitting units.

[0386] The first substrate (sapphire substrate) can be removed by laser lift-off, and the buffer layer can also be removed during the removal of the first substrate. In other words, after bonding and lift-off, the entire structure can expose the second semiconductor layer 1013 (N-type doping) of the light-emitting unit 101.

[0387] The top view of step S104 shown in FIG. 9 may be a schematic diagram after the first substrate is peeled off and the top view of step S103 is flipped over.

[0388] Step S105 : forming a first electrode on a side of the second semiconductor layer of each light-emitting unit away from the first semiconductor layer.

[0389] In the embodiment of the present application, before forming the first electrode 104 and the second electrode, the second semiconductor layer 1013 needs to be shallowly etched (shallow etching means that the etching depth is very small) in order to wash the surface of the second semiconductor layer 1013 and remove impurities on the surface of the second semiconductor layer 1013.

[0390] 8 and 9 , a first electrode 104 may be formed on a side of the second semiconductor layer 1013 of each light emitting unit 101 away from the first semiconductor layer 1011 to obtain a third target structure, which may be the light emitting assembly 10 .

[0391] In the embodiment of the present application, the size of the third target structure depends on the size of the second substrate (glass substrate). In order to achieve mass production of products, the size of the second substrate in the third target structure can usually be larger.

[0392] After obtaining the third target structure of larger size, the third target structure can be cut based on customer needs to obtain a related structure of smaller size. Of course, the third target structure of larger size can be directly bonded to the subsequent drive unit 112, which is not limited in this embodiment of the present application.

[0393] Optionally, referring to Figures 16 to 18, if the third target structure needs to be segmented, a cutting position can be reserved during the preparation process (i.e., multiple light-emitting components are sparsely arranged). For example, in Figure 16, cutting can be performed along the cutting line. The arrangement period of the sparse arrangement can be determined according to the pixel density requirements of the display substrate.

[0394] Alternatively, referring to Figures 19 and 20, if the third target structure does not need to be divided, during the preparation process, any adjacent light-emitting units 101 can be closely adjacent to each other (called close arrangement), and further, multiple light-emitting units 101 can be electrically connected to the common electrode layer 103.

[0395] In the embodiment of the present application, regardless of whether the third target structure is segmented in this step, the only difference is the size and the number of light-emitting components, and there is no difference in the film structure of the light-emitting components. In the subsequent description, the third target structure is still used to collectively refer to the two methods.

[0396] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0397] In an embodiment of the present application, after obtaining the third target structure, regardless of whether the third target structure is cut, a fourth target structure (with a drive unit) of corresponding size can be obtained, and the third target structure and the fourth target structure are bonded to obtain a display substrate. Referring to Figures 21 and 22, the method includes:

[0398] Step S106: Acquire the fourth target structure.

[0399] In an embodiment of the present application, referring to FIG. 22 , a fourth target structure may include a third substrate and a driving unit 112 located on the third substrate. The driving unit 112 includes a third electrode 1121 and a plurality of driving circuits 1122 corresponding to the plurality of light-emitting units 101. The third electrode 1121 is electrically connected to the driving circuit 1122.

[0400] Step S107 : bonding the third target structure and the fourth target structure to connect the third electrode and the first electrode.

[0401] 22 , the third target structure and the fourth target structure are bonded to each other so that the third electrode 1121 and the first electrode 104 are connected.

[0402] Afterwards, the third substrate can be peeled off from one side of the driving circuit 1023, and a pin 1026 can be formed on one side of the driving circuit 1023 so that the pad of the driving backplane and the pin 1023 are fixedly connected to realize the connection between the light-emitting component 10 and the driving backplane.

[0403] Furthermore, after the third target structure and the fourth target structure are bonded, a gap will exist between them. This gap can be filled with a bonding layer, and the bonding layer can be made of OC adhesive, ink, vinyl, etc., which is not limited in this embodiment of the present application. Of course, this gap does not need to be filled with any material.

[0404] Furthermore, after bonding the third target structure to the fourth target structure, an encapsulation layer can be formed on the side of the second substrate away from the drive unit to achieve product encapsulation. The encapsulation layer can be made of an inorganic material, such as a single layer or a stacked structure of SiNx, SiOx, AlO3, or TiOx. Furthermore, the encapsulation layer can also include an organic material film layer prepared by inkjet printing.

[0405] In the embodiments of the present application, the color conversion component can be fabricated on a second substrate (glass substrate) to achieve full-color display. Furthermore, when subsequently bonding the component to the driver unit, no mass transfer process is required, reducing the probability of sidewall light leakage and crosstalk between adjacent light-emitting units, thereby improving production efficiency and yield, and reducing production costs.

[0406] FIG23 is a flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG24 is a structural flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG25 is a top view flow chart of some steps in another method for preparing a light-emitting component according to an embodiment of the present application. Referring to FIG23 to FIG25 , the method includes:

[0407] Step S201: Acquire a first target structure.

[0408] In the embodiment of the present application, the first target structure includes: a first substrate, a plurality of light-emitting units 101 located on the first substrate, a first electrode 104 , a first encapsulation layer 105 , a filling layer 106 and a common electrode layer 103 .

[0409] 26 to 28 , the process of acquiring the first target structure includes:

[0410] Step S2011: forming a buffer film, a second semiconductor film, a light-emitting film, a first semiconductor film and a current spreading film in sequence on a first substrate.

[0411] In the embodiment of the present application, the relevant content of step S2011 can refer to the detailed description of the above-mentioned step S1011, and the embodiment of the present application will not be repeated here.

[0412] Step S2012: Etching the second semiconductor film, the light-emitting film, the first semiconductor film and the current spreading film to obtain the second semiconductor layer, the light-emitting layer, the first semiconductor layer and the current spreading layer of the plurality of light-emitting units.

[0413] In the embodiment of the present application, the relevant content of step S2012 can refer to the detailed description of the above-mentioned step S1012, and the embodiment of the present application will not be repeated here.

[0414] Step S2013: forming a first encapsulation film and a filling film on a side of the plurality of light-emitting units away from the first substrate.

[0415] In the embodiment of the present application, the relevant content of step S2013 can refer to the detailed description of the above-mentioned step S1013, and the embodiment of the present application will not be repeated here.

[0416] Step S2014: Process the first packaging film and the filling film using a grinding process to obtain a first packaging layer and a filling layer.

[0417] In the embodiment of the present application, the relevant content of step S2013 can refer to the detailed description of the above-mentioned step S1013, and the embodiment of the present application will not be repeated here.

[0418] Step S2015 : forming a common electrode layer on a side of the first encapsulation layer and the filling layer away from the first substrate.

[0419] Referring to Figures 27 and 28 , the common electrode layer 103 can connect the first semiconductor layers 1011 of different light-emitting units 101. The common electrode layer 103 can be a transparent conductive film layer. For example, the material of the common electrode layer 103 can be ITO, or other transparent conductive materials such as IZO or IGZO. The main function of the common electrode layer 103 is to connect the first semiconductor layers 1011 of at least two light-emitting units 101 and provide a charging interface for the light-emitting units 101. The thickness of the common electrode layer 103 ranges from 200 angstroms to 1000 angstroms.

[0420] Step S202: Acquire a second target structure.

[0421] The second target structure includes: a second substrate, and a color conversion component 102 located on the second substrate.

[0422] 29 to 31 , the process of acquiring the second target structure includes:

[0423] Step S2021: forming a light shielding layer on one side of the second substrate, and filling the second receiving space of the light shielding layer with a filter portion.

[0424] In the embodiment of the present application, the relevant content of step S2021 can refer to the detailed description of the above-mentioned step S1021, and the embodiment of the present application will not be repeated here.

[0425] Step S2022: forming a retaining wall structure on a side of the light shielding layer away from the second substrate, and filling the color conversion portion into the first receiving space of the retaining wall structure.

[0426] In the embodiment of the present application, the relevant content of step S2022 can refer to the detailed description of the above-mentioned step S1022, and the embodiment of the present application will not be repeated here.

[0427] Step S203 : Bonding the first target structure to the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion.

[0428] In the embodiment of the present application, the relevant content of step S203 can refer to the detailed description of the above-mentioned step S103, and the embodiment of the present application will not be repeated here.

[0429] Step S204 : peeling the first substrate from the second semiconductor layer of the plurality of light-emitting units.

[0430] In the embodiment of the present application, the relevant content of step S204 can refer to the detailed description of the above-mentioned step S104, and the embodiment of the present application will not be repeated here. Among them, the top view of step S204 shown in Figure 28 can be a schematic diagram after the first substrate is peeled off and the top view of step S203 is flipped.

[0431] Step S205 : etching the first encapsulation layer so that a portion of the first encapsulation layer located between any two adjacent light-emitting units has an opening.

[0432] In the embodiment of the present application, since the common electrode layer 103 is formed on the second substrate having the light-emitting units 101, the resulting common electrode layer 103 does not have a target portion M that extends beyond the boundary of the first encapsulation layer 105. To enable signal extraction from the common electrode layer 103, referring to FIG24 , the first encapsulation layer 105 can be etched to form an opening 105a. The opening 105a can expose the filling layer 106 located between two adjacent light-emitting units 101.

[0433] Optionally, the filling layer 106 is made of a conductive material, so that the second electrode formed subsequently can be connected to the common electrode layer 103 through the filling layer 106 .

[0434] Step S206 : forming a first electrode on a side of the second semiconductor layer of each light-emitting unit away from the first semiconductor layer.

[0435] In the embodiment of the present application, before forming the first electrode 104 and the second electrode 107 , the second semiconductor layer 1013 needs to be shallowly etched to clean the surface of the second semiconductor layer 1013 and remove impurities on the surface of the second semiconductor layer 1013 .

[0436] 24 , a first electrode 104 may be formed on a side of the second semiconductor layer 1013 of each light emitting unit 101 away from the first semiconductor layer 1011 to obtain a third target structure, which may include a light emitting assembly 10 .

[0437] In the embodiment of the present application, the size of the third target structure depends on the size of the second substrate (glass substrate). In order to achieve mass production of products, the size of the second substrate in the third target structure can usually be larger.

[0438] After obtaining the third target structure of larger size, the third target structure can be cut based on customer needs to obtain a smaller size related structure. Of course, the third target structure of larger size can be directly bonded to the subsequent drive unit 112, and this application does not limit this.

[0439] Optionally, referring to FIG32 , if the third target structure needs to be segmented, a cutting position can be reserved during the preparation process (the plurality of light-emitting components are sparsely arranged). For example, in FIG32 , cutting can be performed along the cutting line. The arrangement period of the sparse arrangement can be determined according to the pixel density requirements of the display substrate.

[0440] Alternatively, referring to Figure 33, if the third target structure does not need to be divided, during the preparation process, any adjacent light-emitting units 101 can be closely adjacent to each other (called close arrangement), and further, multiple light-emitting units 101 can be electrically connected to the common electrode layer 103.

[0441] In the embodiment of the present application, whether the third target structure is segmented or not in this step, the actual difference is only in size, and there is no difference in the film layer structure. In the subsequent description, the third target structure is still used to collectively refer to the two methods.

[0442] According to the comparison between the second preparation method (steps S201 to S206) and the first preparation method (steps S101 to S106), the main difference between the second preparation method and the first preparation method is that the common electrode layer 103 in the first preparation method is formed on the second substrate having the color conversion component 102; the common electrode layer 103 in the second preparation method is formed on the first substrate having the light-emitting unit 101.

[0443] With the first fabrication method, when bonding the first target structure to the second target structure, since the common electrode layer 103 is formed on the second substrate, the poor alignment accuracy between the first and second substrates may result in low connection reliability between the common electrode layer 103 and the light-emitting units 101. This, in turn, may lead to poor uniformity in signal transmission from the common electrode layer 103 to the first semiconductor layers 1011 of different light-emitting units 101. Therefore, a second fabrication method is proposed, in which the common electrode layer 103 is formed directly on the side of the first semiconductor layer 1011 away from the first substrate.

[0444] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0445] In the embodiment of the present application, after obtaining the third target structure, regardless of whether the third target structure is cut, a fourth target structure (with a driving unit) of corresponding size can be obtained, and the third target structure and the fourth target structure are bonded to obtain a display substrate. Referring to Figures 34 and 35, the method includes:

[0446] Step S207: Acquire the fourth target structure.

[0447] In the embodiment of the present application, the relevant content of step S207 can refer to the detailed description of the above-mentioned step S107, and the embodiment of the present application will not be repeated here.

[0448] Step S208 : bonding the third target structure and the fourth target structure to connect the third electrode and the first electrode.

[0449] In the embodiment of the present application, the relevant content of step S208 can refer to the detailed description of the above-mentioned step S107, and the embodiment of the present application will not be repeated here.

[0450] In the embodiments of the present application, the color conversion component can be fabricated on a second substrate (glass substrate) to achieve full-color display. Furthermore, when subsequently bonding the component to the driver unit, no mass transfer process is required, reducing the probability of sidewall light leakage and crosstalk between adjacent light-emitting units, thereby improving production efficiency and yield, and reducing production costs.

[0451] FIG36 is a flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG37 is a structural flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG38 is a top view flow chart of some steps in another method for preparing a light-emitting component according to an embodiment of the present application. FIG39 is a top view flow chart of some steps in a method for preparing multiple light-emitting components according to an embodiment of the present application. Referring to FIG36 to FIG39, the method includes:

[0452] Step S301: Acquire a first target structure.

[0453] In the embodiment of the present application, the first target structure includes: a first substrate, a plurality of light-emitting units 101 located on the first substrate, a first electrode 104 , a first encapsulation layer 105 , and a blocking portion 108 .

[0454] 40 to 42 , the process of acquiring the first target structure includes:

[0455] Step S3011: forming a buffer film, a second semiconductor film, a light-emitting film, a first semiconductor film and a current spreading film in sequence on a first substrate.

[0456] In the embodiment of the present application, the relevant content of step S3011 can refer to the detailed description of the above-mentioned step S1011, and the embodiment of the present application will not be repeated here.

[0457] Step S3012: Etching the second semiconductor film, the light-emitting film, the first semiconductor film and the current spreading film to obtain the second semiconductor layer, the light-emitting layer, the first semiconductor layer and the current spreading layer of the plurality of light-emitting units.

[0458] In the embodiment of the present application, the relevant content of step S3012 can refer to the detailed description of the above-mentioned step S1012, and the embodiment of the present application will not be repeated here.

[0459] Step S3013: forming a first encapsulation film and a barrier film on a side of the plurality of light-emitting units away from the first substrate.

[0460] In the embodiment of the present application, the relevant contents of step S3013 can refer to the detailed description of the above step S1013, and the embodiment of the present application will not be repeated here. In addition, the barrier film in step S3013 can be prepared by referring to the filling film in step S1013.

[0461] Step S3014: patterning the barrier film.

[0462] 41 and 42 , it can be seen that after the blocking film is patterned, at least a portion of the blocking film between adjacent light emitting units 101 may be removed, so that the blocking film includes a plurality of patterns arranged at intervals.

[0463] Step S3015: Process the first encapsulation film and the barrier film using a grinding process to obtain a first encapsulation layer and a barrier portion.

[0464] The grinding process can be chemical grinding. Referring to Figures 41 and 42 , the ultimate goal of the grinding process is to completely expose the first semiconductor layer 1011 on the side of the second semiconductor layer 1013 away from the first substrate (if a current spreading layer is present, the current spreading layer is exposed), thereby allowing the subsequent common electrode layer 103 to be electrically connected to the first semiconductor layer 1011 through the current spreading layer.

[0465] In the embodiment of the present application, the first encapsulation layer 105 obtained after grinding can surround the sidewalls of the light-emitting unit 101 and cover the area between two adjacent light-emitting units 101. Among the multiple blocking portions 108 obtained after grinding, any two adjacent blocking portions 108 are spaced apart. In other words, referring to FIG. 38 , the blocking portion 108 can be a ring-shaped structure surrounding the sidewalls of the light-emitting unit 101.

[0466] In the embodiment of the present application, after the grinding process, a first electrode 104 may be formed on a side of the second semiconductor layer 1013 away from the first semiconductor layer 1011 to bond the first target structure to the second target structure. Of course, the current spreading layer may also be directly used as the first electrode to bond to the second target structure.

[0467] Step S302: Acquire a second target structure.

[0468] In the embodiment of the present application, the second target structure includes: a second substrate, and a driving unit 112 located on the second substrate. The driving unit 112 includes: a third electrode 1121 and a plurality of driving circuits 1122 corresponding to the plurality of light-emitting units 101. The third electrode 1121 is electrically connected to the driving circuit 1122.

[0469] Step S303: Bonding the first target structure and the second target structure to connect the first electrode and the third electrode.

[0470] In the embodiment of the present application, before bonding the first target structure to the second target structure, a bonding layer 109 (bonding adhesive) can be applied to the side of the second target structure where the third electrode 1121 is provided. During bonding, the first target structure can press the bonding layer 109 to connect the first electrode 104 to the third electrode 1121.

[0471] 37 , after bonding, a bonding layer 109 is formed in the gap between the driving unit 112 of the second target structure and the first substrate of the first target structure. The bonding layer 109 can be used to support the first target structure to prevent partial collapse of the structure when the first substrate is subsequently peeled off.

[0472] Step S304: peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units.

[0473] The first substrate (sapphire substrate) can be removed by laser lift-off, and the buffer layer can also be removed during the removal of the first substrate. In other words, after bonding and lift-off, the entire structure can expose the first semiconductor layer 1011 (N-type doped layer) of the light-emitting unit 101.

[0474] Furthermore, in step S3012, over-etching is required to obtain the first target structure. Therefore, after peeling off the first substrate, a groove can be formed on the side of the first encapsulation layer 105 away from the second substrate. Specifically, in the thickness direction of the light-emitting layer 1012, the distance between the first electrode 104 and the common electrode layer 103 is less than the span of the first encapsulation layer 105 in the thickness direction.

[0475] The top view of step S304 shown in FIG. 38 may be a schematic diagram after the first substrate is peeled off and the top view of step S303 is flipped over.

[0476] Step S305 : forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer.

[0477] Referring to Figures 37 and 38 , a common electrode layer 103 can be formed entirely on the side of the first semiconductor layer 1011 facing away from the second semiconductor layer 1013. The common electrode layer 103 is electrically connected to the first semiconductor layer 1011 of the multiple light-emitting units 101. The thickness of the common electrode layer 103 ranges from 200 angstroms to 1000 angstroms and can be made of a transparent conductive material such as ITO, IZO, or IGZO. The primary purpose of the common electrode layer 103 is to provide a charging interface for the multiple light-emitting units 101 through the first semiconductor layer 1011.

[0478] Furthermore, a portion of the common electrode layer 103 may be located within the groove, while another portion may be located outside the groove. The distance between the portion located within the groove and the second substrate is smaller than the distance between the portion located outside the receiving space and the second substrate. In other words, the surface of the common electrode layer 103 away from the second substrate is non-flat.

[0479] Step S306 : forming a planar layer on a side of the common electrode layer away from the second substrate.

[0480] In the embodiment of the present application, since the surface flatness of the entire structure after the common electrode layer 103 is formed is relatively poor, and the color conversion portion 1021 and the filter portion 1024 need to be subsequently formed, a flat layer 110 can be first formed on the side of the common electrode layer 103 away from the second substrate to ensure uniformity of the color conversion portion 1021 and the filter portion 1024. Referring to FIG. 37 , the surface of the flat layer 110 away from the common electrode layer 103 can be flat, allowing the subsequent color conversion portion 1021 and the filter portion 1024 to be formed on this flat surface, thereby ensuring uniformity of the color conversion portion 1021 and the filter portion 1024.

[0481] Furthermore, a portion of the planar layer 110 may be located above the portion of the common electrode layer 103 located within the groove, while another portion may be located above the portion of the common electrode layer 103 located outside the groove. This increases the contact area between the surface of the planar layer 110 close to the second substrate and the common electrode layer 103, improving the contact bonding strength between the planar layer 110 and the common electrode layer 103 and ensuring the reliability of the planar layer 110 in achieving a flat effect.

[0482] Step S307 : forming a retaining wall structure on a side of the planar layer away from the second substrate, and forming a color conversion portion in the first accommodation space of the retaining wall structure.

[0483] In an embodiment of the present application, referring to FIG. 37 , a retaining wall structure 1022 may be formed on the flat surface of the flat layer 110 away from the second substrate, and a color conversion portion 1021 may be formed in the first accommodation space formed by the retaining wall structure 1022 .

[0484] The color conversion unit 1021 may include a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit may convert light of a first wavelength into light of a second wavelength, the second color conversion unit may convert light of the first wavelength into light of a third wavelength, and the third color conversion unit may convert light of the first wavelength into light of a fourth wavelength.

[0485] For example, the color of the light of the first wavelength can be blue, that is, the multiple light-emitting units 101 are all blue light-emitting units. The color of the light of the second wavelength can be red, and the first color conversion unit can convert the blue light of the first wavelength into red light of the second wavelength. The color of the light of the third wavelength can be green, and the second color conversion unit can convert the blue light of the first wavelength into green light of the third wavelength. The color of the light of the fourth wavelength can be blue, and the third color conversion unit can convert the blue light of the first wavelength into blue light of the fourth wavelength. The first wavelength and the fourth wavelength can be equal or unequal.

[0486] For example, assuming the first wavelength and the fourth wavelength are equal, the first color conversion portion may include red quantum dots (QDs), and the second color conversion portion may include green quantum dots. The third color conversion portion may be a transparent portion that can be used to transmit the light of the first wavelength emitted by the light-emitting unit 101. For example, the material of the transparent portion may be transparent optical adhesive (OC).

[0487] Step S308 : forming a light shielding layer on a side of the retaining wall structure away from the second substrate, and forming a light filtering portion in the second receiving space of the light shielding layer.

[0488] 37 , a light shielding layer 1023 may be formed on a side of the retaining wall structure 1022 away from the second substrate, and a light filter 1024 may be filled in the second receiving space of the light shielding layer 1023 .

[0489] Optionally, the filter section 1024 may include: a first filter section that transmits light of the second wavelength, a second filter section that transmits light of the third wavelength, and a third filter section that transmits light of the fourth wavelength. The first filter section is a red color block, the first filter section may correspond to the position of the first color conversion section, and the first filter section is used to transmit the red light of the second wavelength converted by the first color conversion section. The second filter section is a green color block, the second filter section may correspond to the position of the second color conversion section, and the second filter section is used to transmit the green light of the third wavelength converted by the second color conversion section. The third filter section is a blue color block or a transparent section, the third filter section may correspond to the position of the third color conversion section, and the third filter section is used to transmit the blue light of the fourth wavelength converted by the third color conversion section.

[0490] Finally, to encapsulate the light-emitting assembly 10, a third encapsulation layer 111 can be formed on the side of the color conversion assembly 102 away from the second substrate. This third encapsulation layer 111 can wrap around the edges of the multiple light-emitting units 101, achieving overall encapsulation of the multiple light-emitting units 101 and preventing related structures in the light-emitting assembly 10 from being exposed and corroded.

[0491] Optionally, the third encapsulation layer 111 may be made of an inorganic material, for example, a single layer or a stacked structure of SiNx, SiOx, AlO3, or TiOx. Furthermore, the third encapsulation layer 111 may also include an organic material film layer prepared by inkjet printing.

[0492] It should be noted that the retaining wall structure 1022 and the light-shielding layer 1023 are prepared using a one-time process, that is, step S307 and step S308 can be: forming the retaining wall structure 1022 and the light-shielding layer 1023 on the side of the flat layer 110 away from the second substrate; and forming the color conversion part 1021 and the filtering part 1024 in sequence in the groove part and the accommodating space formed by the retaining wall structure 1022 and the light-shielding layer 1023.

[0493] In the embodiments of the present application, the light-emitting components prepared using this method can be one or more, and their number can be related to the number of driving circuits in the driving unit. The number of driving circuits depends on the size of the second substrate. Generally, in order to achieve mass production of products, a larger second substrate can be used, and multiple driving circuits can be formed on the second substrate to obtain multiple light-emitting components. As shown in Figure 39, nine light-emitting components are obtained, each of which includes three light-emitting units.

[0494] In the embodiments of the present application, after bonding the light-emitting unit and the driver unit, the color conversion assembly can be fabricated directly on a second substrate (glass substrate) with the driver unit and the light-emitting unit, achieving full-color display. This method eliminates the need for a mass transfer process, reduces sidewall light leakage and crosstalk between adjacent light-emitting units, improves production efficiency and yield, and reduces production costs.

[0495] Furthermore, by completing the preparation of the color conversion component on the second substrate (glass substrate) having the driving unit and the light-emitting unit, the mismatch of the bonding of the color conversion component can be avoided. At the same time, it should be noted that the basic principle of the order of the preparation process is to perform the high-temperature process first and then the low-temperature process. Since the temperature during the preparation of the color conversion layer is relatively low, and the temperature during the preparation of the driving circuit is relatively high, after forming the driving unit and then bonding the light-emitting unit and the driving unit, the preparation of the color conversion layer and the color filter layer is completed directly on the second substrate (glass substrate) having the driving unit and the light-emitting unit, without violating the process compatibility.

[0496] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0497] In the embodiment of the present application, the above steps S301 to S308 may also be steps for preparing a display substrate. Of course, preparing the display substrate is to peel off the second substrate from one side of the driving circuit 1023 after completing steps S301 to S308, and form pins on one side of the driving circuit 1023 so that the pads of the driving backplane and the pins 1023 are fixedly connected, thereby achieving the connection between the light-emitting component 10 and the driving backplane.

[0498] Optionally, if a display substrate is to be manufactured, the second target structure obtained in step S302 can be made larger in size and include more driving circuits. In other words, the desired product can be obtained by selecting a suitable second target structure.

[0499] FIG43 is a flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG44 is a structural flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG45 is a top view flow chart of some steps of another method for preparing a light-emitting component according to an embodiment of the present application. Referring to FIG43 to FIG45, the method includes:

[0500] Step S401: Acquire a first target structure.

[0501] In the embodiment of the present application, the first target structure includes: a first substrate, a plurality of light-emitting units 101 located on the first substrate, a first electrode 104 , a first encapsulation layer 105 , and a filling layer 106 .

[0502] 46 to 48 , the process of acquiring the first target structure includes:

[0503] Step S4011: forming a buffer film, a second semiconductor film, a light-emitting film, a first semiconductor film and a current spreading film in sequence on a first substrate.

[0504] In the embodiment of the present application, the relevant content of step S4011 can refer to the detailed description of the above-mentioned step S1011, and the embodiment of the present application will not be repeated here.

[0505] Step S4012: Etching the second semiconductor film, the light-emitting film, the first semiconductor film and the current spreading film to obtain the second semiconductor layer, the light-emitting layer, the first semiconductor layer and the current spreading layer of the plurality of light-emitting units.

[0506] In the embodiment of the present application, the relevant content of step S4012 can refer to the detailed description of the above-mentioned step S1012, and the embodiment of the present application will not be repeated here.

[0507] Step S4013: forming a first encapsulation film on a side of the plurality of light-emitting units away from the first substrate.

[0508] In an embodiment of the present application, referring to Figures 47 and 48, the first encapsulation film can surround the side wall of each light-emitting unit 101, cover the first semiconductor layer 1011 in each light-emitting unit 101, and cover the area between two adjacent light-emitting units 101.

[0509] Optionally, the first encapsulation film may be made of one or more of AlO 3 , SiO 3 , and SiN x . Furthermore, the second encapsulation film may be prepared using ALD, PECVD, or a sol-gel process. The thickness of the first encapsulation film ranges from 100 angstroms to 1 μm.

[0510] Step S4014: Process the first packaging film using a grinding process.

[0511] 43 and 44 , the ultimate goal of the grinding process is to completely expose the second semiconductor layer 1013 so that the second semiconductor layer 1013 and the first electrode 104 are electrically connected.

[0512] 47 and 48 , the first encapsulation film obtained after grinding may include a second semiconductor layer 1013 (P-type doped) exposing the light emitting unit 101 .

[0513] Step S4015 : performing patterning on the ground first encapsulation film to obtain a first encapsulation layer.

[0514] 47 and 48 , the ultimate goal of the patterning process is to separate the first encapsulation layer 105 surrounding different light-emitting units 101, so that the first encapsulation layer 105 includes a plurality of spaced-apart encapsulation patterns 1051, each encapsulation pattern 1051 surrounding the side wall of a light-emitting unit 101, and each encapsulation pattern 1051 exposing the second semiconductor layer 1013 of a light-emitting unit 101.

[0515] Since the encapsulation patterns 1051 are arranged at intervals, it is possible to prevent the light emitted by the light emitting unit 101 from crosstalking to the adjacent light emitting unit 101 along the first encapsulation layer 105 , thereby ensuring the display effect of the light emitting component 10 .

[0516] Step S4016: forming a barrier film on a side of the first packaging layer away from the first substrate, and patterning the barrier film to obtain a barrier portion.

[0517] The barrier film can be made of a conductive material, such as an opaque metal such as Cu, Ni, Al, Ti, or Au. The barrier film can be a single layer or a composite structure, with a thickness ranging from 100 nm to 10 μm. Referring to Figures 47 and 48 , each of the multiple barrier portions 108 obtained by patterning the barrier film has a bowl-shaped structure. Each barrier portion 108 surrounds the sidewalls of a light-emitting unit 101 and covers the second semiconductor layer 1013 of the light-emitting unit 101.

[0518] In an embodiment of the present application, a first electrode 104 corresponding to the blocking portion 108 can be formed before or after the blocking portion 108 is formed, so that the first target structure and the second target structure are bonded and connected. If the first electrode 104 is formed before the blocking portion 108 is formed, that is, the first electrode 104 is located between the blocking portion 108 and the second semiconductor layer 1023, the blocking portion 108 and the second target structure can be bonded. If the first electrode 104 is formed after the blocking portion 108 is formed, that is, the first electrode 104 is located on the side of the blocking portion 108 away from the second semiconductor layer 1023, the first electrode 104 and the second target structure can be bonded. Of course, it is also possible to directly use the blocking portion 108 as the first electrode for bonding to the second target without forming the first electrode 104.

[0519] Step S402: Acquire a second target structure.

[0520] In the embodiment of the present application, the relevant content of step S402 can refer to the detailed description of the above-mentioned step S302, and the embodiment of the present application will not be repeated here.

[0521] Step S403: Bonding the first target structure and the second target structure to connect the first electrode and the third electrode.

[0522] In the embodiment of the present application, the relevant content of step S403 can refer to the detailed description of the above-mentioned step S303, and the embodiment of the present application will not be repeated here.

[0523] Step S404: peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units.

[0524] In the embodiment of the present application, the relevant content of step S404 can refer to the detailed description of the above-mentioned step S304, and the embodiment of the present application will not be repeated here.

[0525] Step S405 : forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer.

[0526] In the embodiment of the present application, the relevant content of step S405 can refer to the detailed description of the above-mentioned step S305, and the embodiment of the present application will not be repeated here.

[0527] Step S406 : forming a retaining wall structure on a side of the common electrode layer away from the second substrate, and forming a color conversion portion in the groove and the first receiving space.

[0528] In the embodiment of the present application, referring to Figures 43 and 44 , a retaining wall structure 1022 can be formed directly on the side of the common electrode layer 103 away from the second substrate. The retaining wall structure 1022 can be located above the portion of the common electrode layer 103 outside the groove. The first receiving space formed by the retaining wall structure 1022 can expose the portion of the common electrode layer 103 within the groove.

[0529] Thus, the color conversion portion 1021 can be formed directly within the groove and the first accommodation space. Since the color conversion portion 1021 can be located within the groove, the contact area between the color conversion portion 1021 and the common electrode layer 103 can be increased, improving the contact and bonding strength between the color conversion portion 1021 and the common electrode layer 103 and preventing the color conversion portion 1021 from falling off. Furthermore, since the planarization layer 110 is not provided in this solution, the overall thickness of the entire structure can be reduced, facilitating a thinner structure.

[0530] The color conversion unit 1021 may include a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit may convert light of a first wavelength into light of a second wavelength, the second color conversion unit may convert light of the first wavelength into light of a third wavelength, and the third color conversion unit may convert light of the first wavelength into light of a fourth wavelength.

[0531] For example, the color of the light of the first wavelength can be blue, that is, the multiple light-emitting units 101 are all blue light-emitting units. The color of the light of the second wavelength can be red, and the first color conversion unit can convert the blue light of the first wavelength into red light of the second wavelength. The color of the light of the third wavelength can be green, and the second color conversion unit can convert the blue light of the first wavelength into green light of the third wavelength. The color of the light of the fourth wavelength can be blue, and the third color conversion unit can convert the blue light of the first wavelength into blue light of the fourth wavelength. The first wavelength and the fourth wavelength can be equal or unequal.

[0532] For example, assuming the first wavelength and the fourth wavelength are equal, the first color conversion portion may include red quantum dots (QDs), and the second color conversion portion may include green quantum dots. The third color conversion portion may be a transparent portion that can be used to transmit the light of the first wavelength emitted by the light-emitting unit 101. For example, the material of the transparent portion may be transparent optical adhesive (OC).

[0533] Step S407: forming a light shielding layer on a side of the retaining wall structure away from the second substrate, and forming a light filtering portion in the second receiving space.

[0534] 47 and 48 , a light shielding layer 1023 may be formed on a side of the retaining wall structure 1022 away from the second substrate, and a light filter 1024 may be filled in the second receiving space of the light shielding layer 1023 .

[0535] Optionally, the filter section 1024 may include: a first filter section that transmits light of the second wavelength, a second filter section that transmits light of the third wavelength, and a third filter section that transmits light of the fourth wavelength. The first filter section is a red color block, the first filter section may correspond to the position of the first color conversion section, and the first filter section is used to transmit the red light of the second wavelength converted by the first color conversion section. The second filter section is a green color block, the second filter section may correspond to the position of the second color conversion section, and the second filter section is used to transmit the green light of the third wavelength converted by the second color conversion section. The third filter section is a blue color block or a transparent section, the third filter section may correspond to the position of the third color conversion section, and the third filter section is used to transmit the blue light of the fourth wavelength converted by the third color conversion section.

[0536] Finally, to encapsulate the light-emitting assembly 10, a third encapsulation layer 111 can be formed on the side of the color conversion assembly 102 away from the second substrate. This third encapsulation layer 111 can wrap around the edges of the multiple light-emitting units 101, achieving overall encapsulation of the multiple light-emitting units 101 and preventing related structures in the light-emitting assembly 10 from being exposed and corroded.

[0537] Optionally, the third encapsulation layer 111 may be made of an inorganic material, for example, a single layer or a stacked structure of SiNx, SiOx, AlO3, or TiOx. Furthermore, the third encapsulation layer 111 may also include an organic material film layer prepared by inkjet printing.

[0538] It should be noted that the retaining wall structure 1022 and the light-shielding layer 1023 are prepared using a one-time process, that is, step S407 and step S408 can be: forming the retaining wall structure 1022 and the light-shielding layer 1023 on the side of the flat layer 110 away from the second substrate; and forming the color conversion part 1021 and the filtering part 1024 in sequence in the groove part and the accommodating space formed by the retaining wall structure 1022 and the light-shielding layer 1023.

[0539] In the embodiments of the present application, the light-emitting components produced using this method can be one or more, and their number can be related to the number of driving circuits in the driving unit. The number of driving circuits depends on the size of the second substrate. Typically, to achieve mass production of products, a larger second substrate can be used, and multiple driving circuits can be formed on the second substrate, thereby obtaining multiple light-emitting components.

[0540] In the embodiments of the present application, after bonding the light-emitting unit and the driver unit, the color conversion assembly can be fabricated directly on a second substrate (glass substrate) with the driver unit and the light-emitting unit, achieving full-color display. This method eliminates the need for a mass transfer process, reduces sidewall light leakage and crosstalk between adjacent light-emitting units, improves production efficiency and yield, and reduces production costs.

[0541] Furthermore, by completing the preparation of the color conversion component on the second substrate (glass substrate) having the driving unit and the light-emitting unit, the mismatch of the bonding of the color conversion component can be avoided. At the same time, it should be noted that the basic principle of the order of the preparation process is to perform the high-temperature process first and then the low-temperature process. Since the temperature during the preparation of the color conversion layer is relatively low, and the temperature during the preparation of the driving circuit is relatively high, after forming the driving unit and then bonding the light-emitting unit and the driving unit, the preparation of the color conversion layer and the color filter layer is completed directly on the second substrate (glass substrate) having the driving unit and the light-emitting unit, without violating the process compatibility.

[0542] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0543] In the embodiment of the present application, the above steps S401 to S408 may also be steps for preparing a display substrate. Of course, preparing the display substrate is to peel off the second substrate from one side of the driving circuit 1023 after completing steps S401 to S408, and form pins on one side of the driving circuit 1023 so that the pads of the driving backplane and the pins 1023 are fixedly connected, thereby achieving the connection between the light-emitting component 10 and the driving backplane.

[0544] Optionally, if a display substrate is to be manufactured, the second target structure obtained in step S402 can be made larger in size and include more driving circuits. In other words, the desired product can be obtained by selecting a suitable second target structure.

[0545] FIG49 is a flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG50 is a structural flow chart of another method for preparing a light-emitting component according to an embodiment of the present application. FIG51 is a top view flow chart of some steps in another method for preparing a light-emitting component according to an embodiment of the present application. Referring to FIG49 to FIG50, the method includes:

[0546] Step S501: Acquire a first target structure.

[0547] In the embodiment of the present application, the first target structure includes: a first substrate, a plurality of light-emitting units 101 located on the first substrate, a first electrode 104 , a first encapsulation layer 105 , and a filling layer 106 .

[0548] Optionally, the process of acquiring the first target structure may be the same as the above-mentioned step S401. For the accompanying drawings, please refer to Figures 46 to 48, and the embodiments of the present application will not be described in detail here.

[0549] Step S502: Acquire a second target structure.

[0550] In the embodiment of the present application, the relevant content of step S502 can refer to the detailed description of the above-mentioned step S302, and the embodiment of the present application will not be repeated here.

[0551] Step S503: Bond the first target structure and the second target structure to connect the first electrode and the third electrode.

[0552] In the embodiment of the present application, the relevant content of step S503 can refer to the detailed description of the above-mentioned step S303, and the embodiment of the present application will not be repeated here.

[0553] Step S504 : peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units.

[0554] In the embodiment of the present application, the relevant content of step S504 can refer to the detailed description of the above-mentioned step S304, and the embodiment of the present application will not be repeated here.

[0555] Step S505 : forming a barrier structure and a light shielding layer on a side of the first semiconductor layer away from the second semiconductor layer.

[0556] In the embodiment of the present application, before forming the retaining wall structure 1022 and the light shielding layer 1023, the bonding layer 109 on the driving unit 112 can be etched to expose a portion of the blocking portion 108. In the thickness direction of the light-emitting layer 1012, the ratio of the exposed portion of the blocking portion 108 to the total height of the blocking portion 108 ranges from 10% to 90%.

[0557] Furthermore, after etching the bonding layer 109 , a portion of the first encapsulation layer 105 is also exposed. In other words, the distance between the bonding layer 109 away from the driving unit 112 and the driving unit 112 is smaller than the maximum distance between the first encapsulation layer 105 and the driving unit 112 .

[0558] After the etching of the bonding layer 109 is completed, the retaining wall structure 1022 and the light shielding layer 1023 can be prepared in one process, or in two processes.

[0559] Referring to Figure 50 , at least a portion of the retaining wall structure 1022 and the light-shielding layer 1023 can be located between the first encapsulation layer 105 and the bonding layer 109, and can wrap around the sidewalls of the encapsulation pattern 1051 of the first encapsulation layer 105. Thus, the retaining wall structure 1022 and the light-shielding layer 1023 can block light and prevent light crosstalk. Furthermore, the retaining wall structure wraps around the sidewalls of the encapsulation pattern 1051 of the first encapsulation layer 105, thereby improving the binding strength of the retaining wall structure and ensuring its reliability.

[0560] Step S506 : forming a common electrode layer on a side of the light shielding layer away from the second substrate.

[0561] In the embodiment of the present application, before forming the common electrode layer 103 , the first semiconductor layer 1011 needs to be shallowly etched to clean the surface of the first semiconductor layer 1011 and remove impurities on the surface of the first semiconductor layer 1011 .

[0562] 50 , since the common electrode layer 103 is located on the side of the light shielding layer 1023 away from the second substrate, the common electrode layer 103 can be sloped on the sidewalls of the light shielding layer 1023 and the sidewalls of the retaining wall structure 1022 , thereby increasing the length of the common electrode layer 103 .

[0563] Even though the common electrode layer 103 is a common layer for multiple light-emitting units 101, light emitted by a light-emitting unit 101 may diffract through the common electrode layer 103 and crosstalk to adjacent light-emitting units 101. However, since the common electrode layer 103 is longer in the present embodiment, the crosstalk path of the light is extended, reducing the probability of light crosstalk.

[0564] Furthermore, a portion of the common electrode layer 103 may be located within the groove, while another portion may be located outside the groove (i.e., above the light shielding layer 1023). The distance between the portion located within the groove and the second substrate is smaller than the distance between the portion located outside the receiving space and the second substrate. In other words, the surface of the common electrode layer 103 away from the second substrate is non-flat.

[0565] Step S507 : forming a color conversion portion and a light filtering portion in sequence in the groove portion and in the third accommodation space formed by the retaining wall structure and the light shielding layer.

[0566] In an embodiment of the present application, referring to FIG. 50 , the color conversion portion 1021 and the filter portion 1024 may be formed in sequence directly within the groove portion and within the accommodating space formed by the retaining wall structure 1022 and the light shielding layer 1023 .

[0567] Because at least a portion of the color-conversion portion 1021 can be located in the groove, the contact area between the color-conversion portion 1021 and the common electrode layer 103 can be increased, thereby improving the contact and bonding strength between the color-conversion portion 1021 and the common electrode layer 103 and preventing the color-conversion portion 1021 from falling off. Furthermore, since the planarization layer 110 is not provided in this solution, the overall thickness of the entire structure can be reduced, thereby achieving a thinner structure.

[0568] The color conversion unit 1021 may include a first color conversion unit, a second color conversion unit, and a third color conversion unit. The first color conversion unit may convert light of a first wavelength into light of a second wavelength, the second color conversion unit may convert light of the first wavelength into light of a third wavelength, and the third color conversion unit may convert light of the first wavelength into light of a fourth wavelength.

[0569] For example, the color of the light of the first wavelength can be blue, that is, the multiple light-emitting units 101 are all blue light-emitting units. The color of the light of the second wavelength can be red, and the first color conversion unit can convert the blue light of the first wavelength into red light of the second wavelength. The color of the light of the third wavelength can be green, and the second color conversion unit can convert the blue light of the first wavelength into green light of the third wavelength. The color of the light of the fourth wavelength can be blue, and the third color conversion unit can convert the blue light of the first wavelength into blue light of the fourth wavelength. The first wavelength and the fourth wavelength can be equal or unequal.

[0570] For example, assuming the first wavelength and the fourth wavelength are equal, the first color conversion portion may include red quantum dots (QDs), and the second color conversion portion may include green quantum dots. The third color conversion portion may be a transparent portion that can be used to transmit the light of the first wavelength emitted by the light-emitting unit 101. For example, the material of the transparent portion may be transparent optical adhesive (OC).

[0571] Referring to Figure 46, the filter section 1024 may include: a first filter section that transmits light of the second wavelength, a second filter section that transmits light of the third wavelength, and a third filter section that transmits light of the fourth wavelength. The first filter section is a red color block, the first filter section may correspond to the position of the first color conversion section, and the first filter section is used to transmit the red light of the second wavelength converted by the first color conversion section. The second filter section is a green color block, the second filter section may correspond to the position of the second color conversion section, and the second filter section is used to transmit the green light of the third wavelength converted by the second color conversion section. The third filter section is a blue color block or a transparent section, the third filter section may correspond to the position of the third color conversion section, and the third filter section is used to transmit the blue light of the fourth wavelength converted by the third color conversion section.

[0572] Finally, to encapsulate the light-emitting assembly 10, a third encapsulation layer 111 can be formed on the side of the color conversion assembly 102 away from the second substrate. This third encapsulation layer 111 can wrap around the edges of the multiple light-emitting units 101, achieving overall encapsulation of the multiple light-emitting units 101 and preventing related structures in the light-emitting assembly 10 from being exposed and corroded.

[0573] Optionally, the third encapsulation layer 111 may be made of an inorganic material, for example, a single layer or a stacked structure of SiNx, SiOx, AlO3, or TiOx. Furthermore, the third encapsulation layer 111 may also include an organic material film layer prepared by inkjet printing.

[0574] In the embodiments of the present application, after bonding the light-emitting unit and the driver unit, the color conversion assembly can be fabricated directly on a second substrate (glass substrate) with the driver unit and the light-emitting unit, achieving full-color display. This method eliminates the need for a mass transfer process, reduces sidewall light leakage and crosstalk between adjacent light-emitting units, improves production efficiency and yield, and reduces production costs.

[0575] Furthermore, by completing the preparation of the color conversion component on the second substrate (glass substrate) having the driving unit and the light-emitting unit, mismatching of the bonding of the color conversion component can be avoided. At the same time, it should be noted that the basic principle of the preparation process sequence is to perform the high-temperature process first and then the low-temperature process. Since the temperature during the preparation of the color conversion layer is relatively low, while the temperature during the preparation of the driving circuit is relatively high, after forming the driving unit and then bonding the light-emitting unit to the driving unit, the color conversion component can be completed directly on the second substrate (glass substrate) having the driving unit and the light-emitting unit, without violating process compatibility.

[0576] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, which includes: a plurality of light-emitting units, a color conversion layer, a common electrode layer, a first electrode, and a first encapsulation layer. The color conversion layer is located on one side of the light-emitting unit and is used to achieve color conversion of the light emitted by the light-emitting unit. The first electrode is located on the other side of the light-emitting unit and is used to receive a driving signal. The first encapsulation layer is used to encapsulate the light-emitting unit to prevent any two adjacent light-emitting units from affecting each other. At least two of the multiple light-emitting units are connected as a whole through the common electrode layer, so that in the subsequent bonding process, the alignment accuracy of the bonding connection can be guaranteed, thereby improving the yield of the product.

[0577] In the embodiment of the present application, the above steps S501 to S507 may also be steps for preparing a display substrate. Of course, preparing the display substrate is to peel off the second substrate from one side of the driving circuit 1023 after completing steps S501 to S507, and form pins on one side of the driving circuit 1023 so that the pads of the driving backplane and the pins 1023 are fixedly connected, thereby achieving the connection between the light-emitting component 10 and the driving backplane.

[0578] Optionally, if a display substrate is to be manufactured, the second target structure obtained in step S502 can be made larger in size and include more driving circuits. In other words, the desired product can be obtained by selecting a suitable second target structure.

[0579] In the embodiments of the present application, the shape of the light-emitting components prepared by the above five methods can be circular (as shown in Figures 9 and 25) or rectangular (as shown in Figures 38, 39, 45, and 51). Of course, other shapes are also possible, and the embodiments of the present application do not limit this.

[0580] Furthermore, the drawings in the embodiments of the present application all illustrate a light-emitting assembly 10 comprising three circular light-emitting units arranged in a triangle. However, the embodiments of the present application do not limit the number of light-emitting units included in the light-emitting assembly 10, the arrangement of the light-emitting units, or the shape of the light-emitting units.

[0581] For example, in Figure 52, the light-emitting assembly 10 includes four circular light-emitting units, and the four light-emitting units are arranged in two rows and two columns. For example, in Figure 53, the light-emitting assembly 10 includes three fan-shaped light-emitting units, and the three light-emitting units are arranged in a circular ring. For example, in Figure 54, the light-emitting assembly 10 includes three circular light-emitting units, and the three circular light-emitting units are arranged in a row.

[0582] Furthermore, the embodiments of the present application do not limit the shape, size, or number of light-emitting components included in the light-emitting chip or display substrate prepared by the above five methods.

[0583] The embodiment of the present application also provides a light-emitting chip, which includes the light-emitting component provided in the above embodiment. The projection area of ​​the light-emitting chip on the light-emitting plane of the light-emitting chip is less than or equal to 1 square millimeter (mm 2 ).

[0584] The embodiment of the present application further provides a display substrate, which includes a driving backplane and a light emitting assembly 10 as shown in Figures 3 to 5. The driving backplane is used to carry the light emitting assembly 10 and provide a driving signal to the light emitting assembly 10.

[0585] Optionally, one light-emitting component constitutes one light-emitting chip, and the light-emitting chip array is arranged on the driving backplane and electrically connected to the driving backplane. Alternatively, multiple light-emitting components constitute one light-emitting chip, and the bonding layers between adjacent light-emitting components are continuously distributed.

[0586] For example, the light-emitting chip includes a plurality of light-emitting components arranged in an array, each light-emitting component constitutes a pixel, and each pixel may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0587] The present application also provides a display substrate. Referring to FIG55 , the display substrate 00 includes a driving backplane 20 and a plurality of light-emitting components 10. The display substrate also includes a bonding layer between the common electrode layer and the driving unit, with at least a portion of the light-emitting unit located within the bonding layer.

[0588] 56 , multiple light-emitting components 10 are located in a display area 00a of a display substrate 00, and are arranged in an array. A driving backplane 20 is used to provide a driving signal to a driving unit 112 via multiple pins 1026 in the light-emitting components 10, so that the driving unit 112 drives the light-emitting unit 101 to emit light.

[0589] Since the display substrate can have substantially the same technical effects as the light-emitting assembly described in the previous embodiment, the technical effects of the display substrate will not be repeatedly described here for the purpose of brevity.

[0590] The terms used in the embodiments of this application are only used to explain the embodiments of this application and are not intended to limit this application. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of this application should have the common meaning understood by people with ordinary skills in the field to which this application belongs.

[0591] The terms used in the embodiments of this application are intended solely to illustrate the embodiments of this application and are not intended to limit this application. Unless otherwise defined, technical or scientific terms used in the embodiments of this application should have the same ordinary meaning as those understood by persons of ordinary skill in the art to which this application belongs. The terms "first," "second," "third," and similar terms used in this patent specification and claims do not denote any order, quantity, or importance, but are simply used to distinguish between different components. Similarly, terms such as "a" or "an" do not denote a limitation of quantity, but rather denote the presence of at least one. Terms such as "include" or "comprising" and similar terms mean that the elements or objects listed before "include" or "comprising" include the elements or objects listed after "include" or "comprising," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used solely to indicate relative positions. When the absolute position of the described objects changes, the relative positions may also change accordingly.

[0592] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A light emitting component, characterized in that: The light emitting component comprises: A plurality of light-emitting units, each of the light-emitting units comprising a stacked first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a color conversion portion, located on a side of the first semiconductor layer away from the light-emitting layer; a common electrode layer, located between the first semiconductor layer and the color conversion portion and electrically connected to the first semiconductor layer, wherein the common electrode layer is connected to at least two of the light-emitting units; a first electrode, located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer, the first electrode being disposed in a one-to-one correspondence with the light-emitting units; a first encapsulation layer, surrounding at least a side wall of the light-emitting unit; Wherein, in the thickness direction of the light-emitting layer, the distance between the first electrode and the common electrode layer is smaller than the span of the first encapsulation layer in the thickness direction.

2. The light emitting assembly according to claim 1, characterized in that: The light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion; For each of the light-emitting units, the first encapsulation layer exposes the first semiconductor layer on a side of the first semiconductor layer facing the color conversion portion, so that the first semiconductor layer is electrically connected to the common electrode layer; A target area is defined between the first encapsulation layer and the color conversion component. The light-emitting component further comprises a filling layer, which is located in the target area. The filling layer is located on a side close to the color conversion component and is located in the same plane as an end of the first encapsulation layer close to the color conversion component.

3. The light emitting assembly according to claim 2, characterized in that: The filling layer is made of a conductive material; the portion of the first encapsulation layer located between any two adjacent light-emitting units further comprises an opening, wherein the opening exposes the filling layer; the light-emitting component further comprises: a second electrode; At least a portion of the second electrode is located in the opening, and the second electrode is connected to the filling layer and the common electrode layer exposed through the opening.

4. The light emitting assembly according to claim 2, characterized in that: The filling layer includes a first end surface in contact with the common electrode layer and a second end surface in contact with a side of the first encapsulation layer away from the color conversion component, wherein the first end surface and an end of the first encapsulation layer close to the color conversion component are located in the same plane; The filling layer further includes a first side surface, and the first side surface is disposed in contact with a portion of the first encapsulation layer surrounding each of the at least two light-emitting units.

5. The light emitting assembly according to any one of claims 1 to 4, characterized in that: The light emitting assembly further includes a color conversion assembly, and the color conversion assembly includes the color conversion portion; Wherein, the color conversion component further includes: a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and the color conversion portion is located at least within the first accommodating space and is used to convert the color of the light emitted by the light-emitting unit; a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space; and a light filter portion, the light filter portion being located at least in the second receiving space, wherein the light filter portion is configured to transmit the light converted by the color conversion portion; The retaining wall structure includes a first portion located in the edge area of ​​the multiple light-emitting units, and a second portion located between any two adjacent light-emitting units among the multiple light-emitting units; the height of the second portion is less than the height of the first portion, and the difference between the height of the first portion and the height of the second portion is 10% to 90% of the total thickness of the light-emitting unit.

6. The light emitting assembly according to any one of claims 1 to 5, characterized in that: A distance between an end of the first electrode away from the common electrode layer and the common electrode layer is greater than or equal to a span of the first encapsulation layer in the thickness direction; In the thickness direction of the light-emitting layer, a relationship between a distance h1 between the first electrode and the common electrode layer and a span h2 of the first encapsulation layer in the thickness direction satisfies: a ratio of h1 to h2 is in a range of 0.1 to 0.

9.

7. The light emitting assembly according to any one of claims 1 to 6, characterized in that: The first semiconductor layer includes P-type doped gallium nitride, the second semiconductor layer includes N-type doped gallium nitride, and the light emitting layer includes a multi-quantum well layer.

8. The light emitting assembly according to claim 1, wherein: For each light-emitting unit, a side of the first encapsulation layer away from the color conversion portion exposes the second semiconductor layer, so that the second semiconductor layer is electrically connected to the first electrode; A distance between an end portion of the first encapsulation layer close to the color conversion portion and the color conversion portion is smaller than a distance between a surface of the first semiconductor layer close to the color conversion portion and the color conversion portion.

9. The light emitting assembly according to claim 8, characterized in that: A surface of the first encapsulation layer away from the color conversion portion and a surface of the second semiconductor layer away from the color conversion portion are located in the same plane.

10. The light emitting assembly according to claim 8 or 9, characterized in that: The light emitting assembly further includes a blocking portion surrounding at least a side wall of the light emitting unit, wherein the blocking portion absorbs or reflects light emitted by the light emitting unit; The blocking portion surrounding the sidewall of the light emitting unit is located on a side of the first encapsulation layer away from the light emitting unit.

11. The light emitting assembly according to claim 10, characterized in that: The material of the barrier portion is metal; the barrier portion is also located on a side of the second semiconductor layer away from the color conversion portion, and is electrically connected to the second semiconductor layer; Wherein, the blocking portion is a first electrode, or The blocking portion is located on a side of the first electrode away from the second semiconductor layer, and the blocking portion is electrically connected to the second semiconductor layer through the first electrode, or, The blocking portion is located between the first electrode and the second semiconductor layer, and is electrically connected to the second semiconductor layer and the first electrode respectively.

12. The light emitting assembly according to any one of claims 8 to 11, characterized in that: The first encapsulation layer includes a plurality of independent encapsulation patterns, and each of the encapsulation patterns surrounds a side wall of the light emitting unit.

13. The light emitting assembly according to any one of claims 8 to 12, characterized in that: The common electrode layer includes a first electrode region and a second electrode region; The first electrode region is located in a groove defined by the first packaging layer and the first semiconductor layer, and the second electrode region is disposed around the first electrode region.

14. The light emitting assembly according to claim 13, characterized in that: The light emitting component further includes a planar layer located between the common electrode layer and the color conversion portion, wherein the planar layer fills the groove portion; The light emitting assembly further includes a color conversion assembly, and the color conversion assembly includes the color conversion portion; Wherein, the color conversion component further includes: a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and the color conversion portion is located at least within the first accommodating space and is used to convert the color of the light emitted by the light-emitting unit; a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space; and a filter portion, the filter portion being located at least in the second receiving space, wherein the filter portion is used to transmit the light converted by the color conversion portion.

15. The light emitting assembly according to claim 14, characterized in that: The distance between the first electrode and a side of the planar layer away from the common electrode layer is greater than or equal to the span of the first encapsulation layer in the thickness direction; In the thickness direction of the light-emitting layer, a relationship between a distance h3 between the first electrode and the common electrode layer and a span h4 of the first encapsulation layer in the thickness direction satisfies: a ratio of h3 to h4 ranges from 0.1 to 0.

9.

16. The light emitting assembly according to claim 13, wherein: At least a portion of the color conversion portion is located in the groove portion and is located on a side of the common electrode layer away from the light emitting unit.

17. The light emitting assembly according to claim 16, wherein: The light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion; The color conversion component further includes: a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and a portion of the color conversion portion is located within the first accommodating space for converting the color of light emitted by the light-emitting unit; a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space; and a filter portion, the filter portion being located at least in the second receiving space, wherein the filter portion is used to transmit the light converted by the color conversion portion.

18. The light emitting assembly according to claim 12, wherein: The common electrode layer includes a first electrode region and a second electrode region; the first electrode region is located in a groove defined by the first encapsulation layer and the first semiconductor layer; the second electrode region is arranged around the first electrode region; the color conversion portion is at least partially located in the groove and is located on a side of the common electrode layer away from the light-emitting unit; The light emitting component includes a color conversion component, and the color conversion component includes the color conversion portion; The color conversion component further includes: a retaining wall structure, wherein the retaining wall structure defines a plurality of first accommodating spaces, each of the first accommodating spaces corresponding to a light-emitting area of ​​the light-emitting unit, and a portion of the color conversion portion is located within the first accommodating space for converting the color of light emitted by the light-emitting unit; a light-shielding layer, wherein the light-shielding layer forms a plurality of second accommodation spaces, and each of the second accommodation spaces is correspondingly provided with a corresponding first accommodation space; and a light filter portion, the light filter portion being located at least in the second receiving space, wherein the light filter portion is configured to transmit the light converted by the color conversion portion; The retaining wall structure wraps the edge of the packaging pattern, and the common electrode layer is located between the retaining wall structure and the color conversion part.

19. The light emitting assembly according to any one of claims 16 to 18, characterized in that: In the thickness direction of the light-emitting layer, a relationship between a distance h5 between the first electrode and the common electrode layer and a span h6 of the first encapsulation layer in the thickness direction satisfies: a ratio of h5 to h6 is in a range of 0.1 to 0.

9.

20. The light emitting assembly according to any one of claims 5, 14, 17 and 18, characterized in that: The color conversion unit includes: a red color conversion unit, a green color conversion unit and a blue color conversion unit, the red color conversion unit is used to convert the light emitted by the light emitting unit into red, the green color conversion unit is used to convert the light emitted by the light emitting unit into green, and the blue color conversion unit is used to convert the light emitted by the light emitting unit into blue; The filter section includes: a red filter section, a green filter section and a blue filter section, the red filter section is used to transmit the light converted by the red color conversion section, the green filter section is used to transmit the light converted by the green filter section, and the blue filter section is used to transmit the light converted by the blue filter section; The light emitted by the light emitting unit is blue, the blue color conversion portion may be a transparent portion, and the blue filter portion is a transparent portion.

21. The light emitting assembly according to any one of claims 5, 14, 17 and 18, characterized in that: The retaining wall structure is made of opaque material.

22. The light emitting assembly according to any one of claims 1 to 21, characterized in that: The material of the first electrode includes at least one of metal and conductive oxide; the material of the common electrode layer includes conductive oxide.

23. The light emitting assembly according to any one of claims 8 to 18, characterized in that: The first semiconductor layer includes N-type doped gallium nitride, the second semiconductor layer includes P-type doped gallium nitride, and the light emitting layer includes a multi-quantum well layer.

24. The light emitting assembly according to any one of claims 8 to 18, characterized in that: The light-emitting assembly further includes: a driving unit located on a side of the plurality of light-emitting units away from the color conversion layer, and a bonding layer located between the common electrode layer and the driving unit; at least a portion of the light-emitting units is located inside the bonding layer; The driving unit is used to drive the light-emitting unit to emit light, the first electrode and the common electrode layer are electrically connected to the driving unit respectively, and the driving unit includes a plurality of third electrodes, and the third electrodes are used to introduce external signals.

25. A display substrate, characterized in that: The display substrate comprises a driving backplane and a plurality of light-emitting components according to claim 21, wherein the driving backplane is used to carry the light-emitting components and provide driving signals to the light-emitting components; Wherein, one light-emitting component constitutes one light-emitting chip, and the light-emitting chip array is arranged on the driving backplane and electrically connected to the driving backplane; or, A plurality of light-emitting components constitute a light-emitting chip, and bonding layers between adjacent light-emitting components are continuously distributed.

26. A display substrate, characterized in that: The display substrate includes a driving backplane and a plurality of light-emitting components according to any one of claims 1 to 20; the driving backplane is used to carry the light-emitting components and provide driving signals to the light-emitting components.

27. The display substrate according to claim 26, wherein: The display substrate further includes a bonding layer located between the common electrode layer and the driving unit; at least a portion of the light emitting unit is located inside the bonding layer.

28. A light-emitting chip, comprising the light-emitting assembly according to any one of claims 1 to 20, wherein the projection area of ​​the light-emitting chip on the light-emitting plane of the light-emitting chip is less than or equal to 1 square millimeter.

29. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a filling layer, each of the light-emitting units comprising a second semiconductor layer, a light-emitting layer, and a first semiconductor layer sequentially stacked in a direction away from the first substrate, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer; Obtaining a second target structure, the second target structure comprising: a second substrate, a color conversion component located on the second substrate, and a common electrode layer, the color conversion component comprising: a retaining wall structure, a color conversion portion, a light shielding layer, and a light filter portion, the retaining wall structure forming a plurality of first accommodation spaces, the color conversion portion being located within the first accommodation spaces; the light shielding layer forming a plurality of second accommodation spaces, and the light filter portion being located within the second accommodation spaces; Bonding the first target structure and the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion; peeling the first substrate from the second semiconductor layer of the plurality of light emitting units; A first electrode is formed on a side of the second semiconductor layer of each light emitting unit away from the first semiconductor layer.

30. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, a filling layer, and a common electrode layer, each of the light-emitting units comprising a second semiconductor layer, a light-emitting layer, and a first semiconductor layer sequentially stacked in a direction away from the first substrate, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer, and the common electrode layer being electrically connected to the first semiconductor layers of the plurality of light-emitting units; Obtaining a second target structure, the second target structure comprising: a second substrate; a color conversion component located on the second substrate; the color conversion component comprising: a retaining wall structure, a color conversion portion, a light shielding layer, and a light filter portion; the retaining wall structure forming a plurality of first accommodating spaces; the color conversion portion being located within the first accommodating spaces; the light shielding layer forming a plurality of second accommodating spaces; and the light filter portion being located within the second accommodating spaces; Bonding the first target structure and the second target structure so that each light-emitting unit corresponds to a color conversion portion and a filter portion; peeling the first substrate from the second semiconductor layer of the plurality of light emitting units; A first electrode is formed on a side of the second semiconductor layer of each light emitting unit away from the first semiconductor layer.

31. A method for preparing a light-emitting component, characterized in that: The method comprises: A first target structure is obtained, wherein the first target structure includes: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first packaging layer, and a plurality of blocking portions, wherein each of the light-emitting units includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first packaging layer exposes the second semiconductor layer of the light-emitting unit, each of the blocking portions is annular, each of the blocking portions surrounds a side wall of the light-emitting unit, and each of the blocking portions is The blocking portion exposes a second semiconductor layer of the light-emitting unit, and the first electrode is located on a side of the second semiconductor layer away from the light-emitting layer and is electrically connected to the second semiconductor layer; Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; forming a flat layer on a side of the common electrode layer away from the second substrate; forming a retaining wall structure on a side of the flat layer away from the second substrate, and forming a color conversion portion in the first accommodation space of the retaining wall structure; A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

32. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of the light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of the light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and electrically connected to the second semiconductor layer; Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; The first target structure and the second target structure are bonded together so that the first electrode connected to the third electrode; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; forming a retaining wall structure on a side of the common electrode layer away from the second substrate, and forming a color conversion portion in the groove portion and the first accommodation space of the retaining wall structure; A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

33. A method for preparing a light-emitting component, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of each light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of a light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding the sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer; Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a retaining wall structure and a light shielding layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the retaining wall structure and the light shielding layer constitute a plurality of third accommodating spaces; forming a common electrode layer on a side of the light shielding layer away from the second substrate, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; A color conversion portion and a filter portion are sequentially formed in the groove portion and the third accommodating space.

34. A method for preparing a display substrate, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer exposing the second semiconductor layer of the light-emitting unit, each of the blocking portions having a ring-shaped structure, each of the blocking portions surrounding a sidewall of the light-emitting unit and each of the blocking portions exposing the second semiconductor layer of the light-emitting unit, and the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer; Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; forming a flat layer on a side of the common electrode layer away from the second substrate; forming a retaining wall structure on a side of the flat layer away from the second substrate, and forming a color conversion portion in the first accommodation space of the retaining wall structure; A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

35. A method for preparing a display substrate, characterized in that: The method comprises: A first target structure is obtained, where the first target structure includes: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of the light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of the light-emitting unit, and each of the encapsulation patterns forming a groove, and the blocking portion having a bowl-shaped structure. Each of the blocking portions surrounds a sidewall of the light-emitting unit and covers the second semiconductor layer of the light-emitting unit. The material of each of the blocking portions is a conductive material. The first electrode is located on a side of the second semiconductor layer away from the light-emitting layer and is electrically connected to the second semiconductor layer. Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; Bonding the first target structure and the second target structure so that the first electrode and the third electrode are connected; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a common electrode layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; forming a retaining wall structure on a side of the common electrode layer away from the second substrate, and forming a color conversion portion in the groove portion and the first accommodation space of the retaining wall structure; A light shielding layer is formed on a side of the blocking wall structure away from the second substrate, and a light filtering portion is formed in the second accommodation space of the light shielding layer.

36. A method for preparing a display substrate, characterized in that: The method comprises: Obtaining a first target structure, the first target structure comprising: a first substrate, a plurality of light-emitting units located on the first substrate, a first electrode, a first encapsulation layer, and a plurality of blocking portions, each of the light-emitting units comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially stacked in a direction away from the first substrate, the first encapsulation layer having a plurality of spaced encapsulation patterns, each of the encapsulation patterns surrounding a sidewall of each light-emitting unit, each of the encapsulation patterns exposing the second semiconductor layer of a light-emitting unit, and each of the encapsulation patterns forming a groove, the blocking portions having a bowl-shaped structure, each of the blocking portions surrounding the sidewall of the light-emitting unit and covering the second semiconductor layer of the light-emitting unit, each of the blocking portions being made of a conductive material, the first electrode being located on a side of the second semiconductor layer away from the light-emitting layer and being electrically connected to the second semiconductor layer; Acquire a second target structure, the second target structure comprising: a second substrate, and a driving unit located on the second substrate, the driving unit comprising: a third electrode and a plurality of driving circuits corresponding to the plurality of light-emitting units, the third electrode being electrically connected to the driving circuit; The first target structure and the second target structure are bonded together so that the first electrode connected to the third electrode; peeling the first substrate from the first semiconductor layer of the plurality of light-emitting units; forming a retaining wall structure and a light shielding layer on a side of the first semiconductor layer away from the second semiconductor layer, wherein the retaining wall structure and the light shielding layer constitute a plurality of third accommodating spaces; forming a common electrode layer on a side of the light shielding layer away from the second substrate, wherein the common electrode layer is electrically connected to the first semiconductor layers of the plurality of light emitting units; A color conversion portion and a filter portion are sequentially formed in the groove portion and the third accommodating space.

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