Switch module and communication device

Abstract

A switch module and a communication device, which are used for ensuring that indexes such as the insertion loss of switch modules and the switching time of the switch modules are not lowered while increasing the range of linearity and the withstand voltage of the switch modules. The switch module comprises a circuit input end, a circuit output end and at least one switch die. The switch die comprises an input end, an output end and M series structures; each series structure amongst the M series structures comprises a plurality of sub-modules connected in series to each other, each sub-module comprising one diode or a plurality of diodes connected in series to each other; the plurality of sub-modules connected in series to each other comprise a first sub-module and a second sub-module which are adjacent to each other, the first sub-module having a first polarity direction, the second sub-module having a second polarity direction, and the first polarity direction being opposite to the second polarity direction.

Description

Switch module and communication device

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office on September 28, 2023, with application number 202311290355.4 and invention name “A switch module and communication device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The embodiments of the present application relate to the field of communications, and in particular to a switch module and a communications device. Background Art

[0003] The rapid development of wireless communication technology places increasingly higher demands on the performance of RF systems. RF switches switch RF signals between different RF channels through different operating states. The performance of RF switches determines the quality of RF signal transmission and reception.

[0004] Figure 1 shows an example of the structure of an existing RF switch. The existing RF switch includes four diodes, namely diode 121, diode 122, diode 123, and diode 124. The four diodes are in a time-sharing on or off state. For example, when diodes 122 and 123 are in the off state, and diodes 121 and 124 are in the on state, the RF channel between the input port 101 and the output port 112 of the RF switch is in the on state. When diodes 121 and 124 are in the off state, and diodes 122 and 123 are in the on state, the RF channel between the input port 102 and the output port 111 of the RF switch is in the on state.

[0005] To improve the linearity range of existing RF switches, the typical approach is to increase the number of diodes included in the RF switch or to increase the circuit complexity of the RF switch. However, as the number of diodes increases or the complexity of the RF circuit increases, the linearity range of the RF switch degrades, making it difficult to meet the requirements of the RF switch for conducting highly linear RF signals. Furthermore, the linearity range of the RF switch is constrained by indicators such as the RF switch's withstand voltage, power, insertion loss, and switching time.

[0006] Summary of the Invention

[0007] The embodiments of the present application provide a switch module and a communication device for improving the linearity range and voltage resistance of the switch module while ensuring that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0008] In a first aspect, an embodiment of the present application provides a switch module, comprising a circuit input end, a circuit output end, and at least one switch die, wherein the at least one switch die is connected between the circuit input end and the circuit output end. For example, the switch module comprises one switch die, and the switch die is connected in series between the input end and the circuit output end. For another example, the switch module comprises a plurality of switch die, and the plurality of switch die are connected in series, in parallel, or in series and parallel between the input end and the circuit output end. The switch core includes an input end, an output end, and M series structures, where M is any integer greater than 1. The M series structures are connected in parallel to the input end, and the M series structures are connected in parallel to the output end. Each of the M series structures includes multiple sub-modules connected in series with each other, and each sub-module includes a diode or multiple diodes connected in series with each other. The multiple sub-modules connected in series with each other include adjacent first and second sub-modules. The first sub-module has a first polarity direction, and the second sub-module has a second polarity direction. The first polarity direction is opposite to the second polarity direction. The multiple diodes included in the switch core are all in an on state or in an off state.

[0009] The switch module described in this invention improves the linearity range and withstand voltage of the switch module while maintaining performance indicators such as insertion loss and switching time, ensuring that the switch module conducts highly linear RF signals. The linearity range of the switch module refers to the range within which the output power of the switch module increases linearly with the input power.

[0010] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the first polarity direction is the polarity direction of the first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode. The second submodule includes a second diode, the second polarity direction is the polarity direction of the second diode, and the direction from the anode of the second diode to the cathode of the second diode is the polarity direction of the first diode.

[0011] By using the switch module shown in this aspect, when each sub-module includes a diode, it is effectively ensured that the multiple diodes included in the switch tube core are all in the on state or the off state, while improving the linearity range and voltage resistance of the switch module, ensuring that indicators such as the switch module insertion loss and the switch module switching time are not reduced.

[0012] Based on the first aspect, in an optional implementation, the first submodule includes a plurality of first diodes connected in series, wherein any two different first diodes among the plurality of first diodes connected in series have the same polarity direction, the first polarity direction is the polarity direction of each first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode. The second submodule includes a plurality of second diodes connected in series, wherein any two different second diodes among the plurality of second diodes connected in series have the same polarity direction, the first polarity direction is the polarity direction of each first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

[0013] By using the switch module shown in this aspect, when each sub-module includes multiple diodes, it is effectively ensured that the multiple diodes included in the switch tube core are all in the on state or the off state, while improving the linearity range and voltage resistance of the switch module, ensuring that indicators such as the switch module insertion loss and the switch module switching time are not reduced.

[0014] Based on the first aspect, in an optional implementation, the two ends of each of the series structures respectively include a first end diode and a second end diode, the first polarities of the M first end diodes included in the M series structures are connected in parallel to the input end, and the second polarities of the M second end diodes included in the M series structures are connected in parallel to the output end; if the series structure includes an even number of the sub-modules, the first polarity is the same as the second polarity, or, if the series structure includes an odd number of the sub-modules, the first polarity is opposite to the second polarity.

[0015] By using the switch module shown in this aspect, the linearity range and voltage resistance of the switch module are improved while ensuring that indicators such as the insertion loss and switching time of the switch module are not reduced, thereby ensuring that the switch module conducts high-linearity RF signals.

[0016] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the second submodule includes a second diode, the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end.

[0017] With the switch module shown in this aspect, when the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end, the anode of the first diode is connected in series with the input end, and the anode of the second diode is connected in series with the output end. Then, while improving the linearity range and withstand voltage of the switch module, it is ensured that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0018] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the second submodule includes a second diode, the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end.

[0019] With the switch module shown in this aspect, when the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end, the cathode of the first diode is connected in series with the input end, and the cathode of the second diode is connected in series with the output end. Then, while improving the linearity range and withstand voltage of the switch module, it is ensured that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0020] Based on the first aspect, in an optional implementation, each of the series structures includes an even number of the submodules.

[0021] When using the switch module shown in this aspect, when each series structure includes an even number of sub-modules, the polarity direction of the diode at the first end of each series structure is ensured to be opposite to the polarity direction of the diode at the second end, so as to ensure that the first polarity connected to the input end and the second polarity connected to the output end are the same. In this way, it is effectively ensured that all diodes included in the series structure are in the on or off state, while improving the linearity range and withstand voltage of the switch module while ensuring that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced. This effectively limits the mutual constraints between indicators such as the linearity range, withstand voltage, power, insertion loss, and switching time of the switch module in the switch module.

[0022] Based on the first aspect, in an optional implementation, the M series structures include a first series structure, and a first electrical connection point is connected between any two adjacent sub-modules included in the first series structure. The first electrical connection point is used to apply a first forward bias voltage or a first reverse bias voltage to the first series structure, and the first forward bias voltage is used to turn on each diode included in the first series structure, and the first reverse bias voltage is used to turn off each diode included in the first series structure.

[0023] By using the switch module of this aspect, applying a first forward bias voltage to the first electrical connection point can ensure that each diode included in the first series structure is in a conducting state. Applying a first reverse bias voltage to the first electrical connection point can ensure that each diode included in the first series structure is in a shutoff state.

[0024] Based on the first aspect, in an optional implementation, the M series structures also include a second series structure, a second electrical connection point is connected between any two adjacent sub-modules included in the second series structure, one of the first electrical connection points included in the first series structure is connected to one of the second electrical connection points included in the second series structure, and the second electrical connection point is used to apply a second forward bias voltage or a second reverse bias voltage to the second series structure, the second forward bias voltage is used to turn on each diode included in the second series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure.

[0025] With the switch module shown in this aspect, the first electrical connection point and the second electrical connection point are connected in series, and a first forward bias voltage and a second forward bias voltage can be applied to the first series structure and the second series structure, respectively, so that each diode included in the first series structure and the second series structure is in a conducting state. Similarly, the first electrical connection point and the second electrical connection point can apply a first reverse bias voltage and a second reverse bias voltage to the first series structure and the second series structure, respectively, so that each diode included in the first series structure and the second series structure is in a cut-off state.

[0026] Based on the first aspect, in an optional implementation, the switch module includes a switch core, the input end of the switch core is connected to the circuit input end, and the output end of the switch core is connected to the circuit output end.

[0027] By using the switch module shown in this aspect, each diode included in the switch core is in a conducting state, and the radio frequency signal input to the circuit input end can be transmitted to the circuit output end.

[0028] Based on the first aspect, in an optional implementation, the circuit input end specifically includes a first circuit input end and a second circuit input end, and the switch module includes a first switch die, a second switch die, a third switch die and a fourth switch die, the input end of the first switch die and the input end of the second switch die are connected in parallel to the first circuit input end, the output end of the second switch die is grounded, the output end of the first switch die and the input end of the third switch die are connected in parallel to the circuit output end, the output end of the third switch die and the input end of the fourth switch die are connected in parallel to the second circuit input end, and the output end of the fourth switch die is grounded.

[0029] The switch module described in this aspect functions as a single-pole, double-throw (SPDT) switch, with the first and second circuit input terminals functioning as double-throw (DPT) switches and the circuit output terminal functioning as a single-pole (SPDT) switch. To achieve circuit continuity between the first circuit input terminal and the circuit output terminal, the first and fourth switch dies are turned on, while the second and third switch dies are turned off. To achieve circuit continuity between the second circuit input terminal and the circuit output terminal, the first and fourth switch dies are turned off, and the second and third switch dies are turned off.

[0030] Based on the first aspect, in an optional implementation, the M series structures include a first series structure, the switch module further includes a substrate, the substrate including a first conductive region, a second conductive region, and a third conductive region, the first series structure connected to a first surface of the second conductive region, the first series structure connected to the first conductive region via a first electrical path, the first series structure connected to the third conductive region via a second electrical path, the first conductive region serving as the input end, and the third conductive region serving as the output end. The substrate may be a frame, a circuit board, or a ceramic board.

[0031] The use of the switching module shown in this aspect can ensure that when each diode included in the first series structure is in a conductive state, the circuit between the input end and the output end is in a conductive state, and when each diode included in the first series structure is in a turned-off state, the circuit between the input end and the output end is in a turned-off state.

[0032] Based on the first aspect, in an optional implementation, the M series structures include a second series structure, the second series structure is connected to the second surface of the second conductive region, the second series structure is connected to the first conductive region through a third electrical path, and the second series structure is connected to the third conductive region through a fourth electrical path.

[0033] With the switch module shown in this aspect, the first series structure and the second series structure are located on two surfaces of the second conductive region, thereby improving the integration of the switch module.

[0034] Based on the first aspect, in an optional implementation, the M series structures include a third series structure, and along a direction perpendicular to the first surface of the second conductive region, the first series structure is located between the first surface of the second conductive region and the third series structure. The frame also includes a fourth conductive region and a fifth conductive region. The third series structure is connected to the fourth conductive region through a fifth electrical path, and the third series structure is connected to the fifth conductive region through a sixth electrical path. The fourth conductive region serves as the input end, and the fifth conductive region serves as the output end.

[0035] By adopting the switch module shown in this aspect, when the first series structure is located between the first surface of the second conductive region and the third series structure, the integration of the switch module is improved.

[0036] Based on the first aspect, in an optional implementation, the first series structure is packaged on the same wafer.

[0037] By adopting the switch module shown in this aspect, when the first series structure is packaged on the same wafer, the overall volume of the first series structure is effectively reduced and the integration of the first series structure is improved.

[0038] In a second aspect, an embodiment of the present application provides a communication device, comprising a processor, J receiving channels, and P transmitting channels, wherein J and P are respectively any integer greater than 1, the J receiving channels and the P transmitting channels include at least one switch module as described in any one of the first aspect above, and the processor is connected to the switch module; the processor is configured to conduct at least one of the J receiving channels through the switch module, and / or the processor is further configured to conduct at least one of the P transmitting channels through the switch module. For a description of the beneficial effects of a communication device employing a switch module, please refer to the first aspect and will not be elaborated on in detail.

[0039] Based on the second aspect, in an optional implementation, the communication device also includes a baseband processor connected to each of the P transmission channels, each of the P transmission channels includes a transmitter in the RF transceiver, a transmission module in the RF module, and a transmitting antenna in the antenna; if the transmission channel is in an on state, the baseband processor is used to send a first digital signal to the transmission channel, the transmitter is used to convert the first digital signal into a first RF signal, the transmission module is used to process the first RF signal to obtain a processed first RF signal, and the transmitting antenna is used to emit the processed first RF signal.

[0040] Based on the second aspect, in an optional implementation, the communication device also includes a baseband processor connected to each of the J receiving channels, each of the J receiving channels includes a receiver in the RF transceiver, a receiving module in the RF module, and a receiving antenna in the antenna; if the receiving channel is in an on state, the receiving antenna is used to receive a second RF signal, the receiving module is used to process the second RF signal to obtain a processed second RF signal, the receiver is used to convert the processed second RF signal into a second digital signal, and the baseband processor is used to digitally process the second digital signal.

[0041] In a third aspect, an embodiment of the present application provides a communication system, including a first communication device and a second communication device, wherein the first communication device is used to send a first radio frequency signal to the second communication device, or the first communication device is used to receive a second radio frequency signal from the second communication device. For a description of the structures of the first communication device and the second communication device, please refer to the second aspect, and no further details are given. For a description of the beneficial effects of a communication system using a switch module, please refer to the first aspect, and no further details are given. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] FIG1 is a structural example of an existing radio frequency switch;

[0043] FIG2 is a diagram illustrating an exemplary structure of an embodiment of a communication system provided by the present application;

[0044] FIG3 is a structural diagram of an embodiment of a communication device provided by the present application;

[0045] FIG4 is a structural diagram of a first embodiment of a switch module provided in this application;

[0046] FIG5 is a structural diagram of a first embodiment of a switch die provided in the present application;

[0047] FIG6 is a structural diagram illustrating an example of a switch module including the switch die shown in FIG5 ;

[0048] FIG7 is a diagram illustrating a second embodiment of the structure of a switch die provided in the present application;

[0049] FIG8 is a structural diagram of a third embodiment of a switch die provided in the present application;

[0050] FIG9 is a structural diagram of a second embodiment of a switch module provided in this application;

[0051] FIG10 is a structural diagram of a fourth embodiment of a switch die provided in the present application;

[0052] FIG11 is a structural diagram of a third embodiment of a switch module provided in this application;

[0053] FIG12 is a top view of an exemplary packaging structure of the first switch module provided in the present application;

[0054] FIG13 is a side view of an exemplary packaging structure of the switch module shown in FIG12 ;

[0055] FIG14 is another side view of an exemplary packaging structure of the switch module shown in FIG12 ;

[0056] FIG15 is another side view of an exemplary packaging structure of the switch module shown in FIG12 ;

[0057] FIG16 is a side view of an exemplary packaging structure of a second switch module provided in the present application;

[0058] FIG17 is a side view of an exemplary packaging structure of a third switch module provided in the present application;

[0059] FIG18 is a side view diagram illustrating the packaging structure of the fourth switch module provided in the present application. DETAILED DESCRIPTION

[0060] The embodiment of the present application provides a switch module and a communication device for improving the linearity range and voltage resistance of the switch module while ensuring that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced, and ensuring that the switch module can conduct high-linearity and high-power radio frequency signals. Among them, the linearity range of the switch module means that within the linearity range, the output power of the switch module increases linearly with the input power. The switching time of the switch module refers to the time required for the switch module to switch different working states. Figure 2 is an example diagram of the structure of an embodiment of the communication system provided by the present application. The communication system 200 shown in this embodiment includes a first communication device 201 and a second communication device 202 connected to the first communication device 201. This embodiment does not limit the number of the first communication device 201 and the second communication device 202. For example, the first communication device 201 can be connected to multiple second communication devices 202. This embodiment does not limit the type of the communication system 200. For example, the communication system 200 may be a wireless local area network (WLAN) or other types of wireless communication systems, such as a long term evolution (LTE) system, a frequency division duplex (FDD) system, a time division duplex (TDD) system, a universal mobile telecommunication system (UMTS), a world-wide interoperability for microwave access (WiMAX) communication system, a new radio (NR), satellite communication, fifth generation mobile communication technology (5G) and future communication systems.

[0061] The first communication device 201 may be an access point (AP), and the second communication device 202 may be a station (STA). The first communication device 201 is configured to communicate with the second communication device 202 via a WLAN and transmit signals from the second communication device 202 to the network, or transmit signals from the network to the second communication device 202. The first communication device 201 may be any device with wireless transceiver capabilities. The first communication device 201 includes but is not limited to: evolved Node B (eNB), radio network controller (RNC), Node B (NB), base station controller (BSC), base transceiver station (BTS), home evolved NodeB (or home Node B, HNB), baseband unit (BBU), access point (AP) in wireless fidelity (WIFI) system, wireless relay node, wireless backhaul node, transmission point (TP) or transmission and reception point (TRP), etc., and can also be a gNB or transmission point (TRP or TP) in a 5G system, one or a group of (including multiple antenna panels) antenna panels of a base station in a 5G system, or a network node constituting a gNB or transmission point, such as a baseband unit (BBU) or a distributed unit (DU), etc. The second communication device 202 may be referred to as a user equipment, an access terminal, a subscriber unit, a subscriber station, a mobile station, a mobile station, a remote station, a remote terminal, a mobile device, a user terminal, a terminal, a wireless communication device, a user agent, or a user device.The second communication device 202 can also be a cellular phone, a cordless phone, a session initiation protocol (SIP) phone, a wireless local loop (WLL) station, a personal digital assistant (PDA), a handheld device with wireless communication capabilities, a computing device or other processing device connected to a wireless modem, a vehicle-mounted device, a wearable device, a terminal device in a future 5G network, or a terminal device in a future evolved public land mobile network (PLMN), etc., and this application is not limited to this.

[0062] Figure 3 is a diagram illustrating the structure of an embodiment of a communication device provided herein. Taking a first communication device 201 as an example, the first communication device 201 includes a baseband processor 301, a radio frequency transceiver 302, a radio frequency module 303, and an antenna 304, which are connected in sequence. The first communication device 201 also includes a processor 305 connected to the baseband processor 301, the radio frequency transceiver 302, and the radio frequency module 303, respectively.

[0063] The first communication device 201 includes P transmitting channels and J receiving channels, where P is any integer greater than or equal to 1, and J is any integer greater than or equal to 1. Each of the J receiving channels includes a receiver in the RF transceiver 302, a receiving module in the RF module 303, and a receiving antenna in the antenna 304. Each of the P transmitting channels includes a transmitter in the RF transceiver 303, a transmitting module in the RF module 303, and a transmitting antenna in the antenna 304. The transmitting channel includes at least one switch module. The switch module shown in this embodiment is applied to the RF field and serves as an example of an RF switch. In the transmitting channel, the switch module can be connected between the transmitter and the transmitting module, and / or between the transmitting module and the transmitting antenna. The switch module is used to turn on or off the transmitting channel. The receiving channel includes at least one switch module. In the receiving channel, the switch module can be connected between the receiver and the receiving module, and / or between the receiving module and the receiving antenna. The switch module is used to turn on or off the receiving channel. The first communication device 201 shown in this example includes a processor 305 configured to turn on at least one transmit channel among the P transmit channels, and further configured to turn on at least one receive channel among the J receive channels.

[0064] When the processor 305 turns on the transmit channel, the baseband processor 301 sends a first digital signal to the transmit channel. The transmitter in the RF transceiver 303 is used to convert the first digital signal into a first RF signal and send the first RF signal to the transmit module in the RF module 303. The transmit module processes the first RF signal to obtain a processed first RF signal. The transmit module may include a switch, a filter, a power amplifier (PA), a low noise amplifier (LNA), an antenna tuner, or a phase shifter. For example, when the transmit module includes a filter, the filter's processing of the first RF signal refers to filtering the first RF signal. For another example, when the transmit module includes a PA, the PA's processing of the first RF signal refers to amplifying the power of the first RF signal. The transmit module sends the processed first RF signal to a transmit antenna, which is used to transmit the processed first RF signal.

[0065] When the processor 305 turns on the receiving channel, the receiving antenna receives the second RF signal, the receiving module in the RF module 303 processes the second RF signal to obtain a processed second RF signal, and sends the processed second RF signal to the receiver in the RF transceiver 302. For a description of the components included in the receiver and how the second RF signal is processed, please refer to the description of the components included in the transmitter and how the first RF signal is processed, and the details are not repeated here. The receiver in the RF transceiver 302 is used to convert the processed second RF signal into a second digital signal and send the second digital signal to the baseband processor 301, which performs digital processing on the second digital signal.

[0066] This embodiment does not limit the application of the switch module. For example, the switch module can also be applied to the field of power amplifiers, etc. The antenna 304 includes a low-gain antenna and a high-gain antenna, etc. Specifically, the antenna 304 can include one or more antennas, antenna elements and / or antenna arrays. Optionally, the antenna 304 can also include a switch module, and the switch module included in the antenna 304 serves as a phase shifter or an antenna tuner, etc., which is not specifically limited. In the case where the antenna 304 includes a switch module, the processor 305 is connected to the antenna 304 to turn on or off the switch module included in the antenna 304. The above description of the position of the switch module is an optional example and is not repeated here. For example, the switch module can also be connected between the baseband processor 301 and the transmitting channel. For example, the switch module can be connected between the baseband processor 301 and the receiving channel.

[0067] This embodiment does not limit the type of processor 305. For example, the processor 305 may be one or more field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), system-on-chips (SoCs), central processor units (CPUs), network processors (NPs), digital signal processors (DSPs), microcontrollers (MCUs), programmable logic devices (PLDs), or other integrated chips, or any combination of the above chips or processors. For the description of the structure of the second communication device 202, please refer to the description of the structure of the first communication device 201, and no further details will be given.

[0068] Figure 4 is a structural example diagram of the first embodiment of the switch module provided in this application. The switch module 400 shown in this embodiment includes a circuit input terminal 402 and a circuit output terminal 403. The switch module 400 also includes K switch cores 401 connected between the circuit input terminal 402 and the circuit output terminal 403, wherein K is any integer greater than or equal to 1, and this embodiment does not limit the specific value of K. As shown in Figure 4, taking K=1 as an example, a switch core 401 is connected between the circuit input terminal 402 and the circuit output terminal 403. If K>1, the K switch cores included in the switch module 400 are connected between the circuit input terminal 402 and the circuit output terminal 403 in series, in parallel, or in series-parallel mode. The K switch cores 401 are used to turn on or off the circuit between the circuit input terminal 402 and the circuit output terminal 403. The optional structure of the switch core 401 shown in this embodiment is described below:

[0069] Figure 5 is a diagram illustrating the structure of the first embodiment of the switch die provided in this application. The switch die 401 shown in this embodiment includes an input terminal 501, an output terminal 502, and M series structures. In the switch module shown in this embodiment, the input terminal 501 is connected to the circuit input terminal 402 shown in Figure 4, and the output terminal 502 is connected to the circuit output terminal 403 shown in Figure 4. M is any integer greater than 1. The example shown in Figure 5 takes M=2 as an example. Therefore, the switch die 401 includes a first series structure 511 and a second series structure 512. The first series structure 511 includes two first submodules and a second submodule connected in series. The first submodule has a first polarity direction, and the second submodule has a second polarity direction. The first polarity direction shown in this embodiment is opposite to the second polarity direction. In this embodiment, the first submodule includes a first diode 521 and the second submodule includes a second diode 522. Therefore, the first polarity direction of the first submodule is the polarity direction of the first diode 521, and the second polarity direction of the second submodule is the polarity direction of the second diode 522. Among them, the polarity direction of the diode refers to the direction from the anode of the diode to the cathode of the diode. Then, the polarity direction of the first diode 521 is the direction of the arrow 541 shown in Figure 5 (that is, the direction of the arrow 541 is the direction from the anode of the first diode 521 to the cathode of the first diode 521). The polarity direction of the second diode 522 is the direction of the arrow 542 shown in Figure 5 (that is, the direction of the arrow 542 is the direction from the anode of the second diode 522 to the cathode of the second diode 522). It can be seen from the polarity direction shown by the arrow 541 and the polarity direction shown by the arrow 542 that the polarity direction of the first diode 521 is opposite to the polarity direction of the second diode 522. It can be understood that in the first series structure 511, the input end 501, the anode of the first diode 521, the cathode of the first diode 521, the cathode of the second diode 522, the anode of the second diode 522 and the output end 502 are connected in series in sequence. Similarly, the second series structure 512 includes two first submodules and a second submodule connected in series. For example, the first submodule includes a first diode 531 and the second submodule includes a second diode 532. The first polarity direction of the first submodule included in the second series structure 512 is opposite to the second polarity direction of the second submodule. Specifically, the polarity direction of the first diode 531 is opposite to the polarity direction of the second diode 532. For details, please refer to the description of the polarity direction of the first diode 521 being opposite to the polarity direction of the second diode 522. The details are not repeated here. In the second series structure 512, the input terminal 501, the anode of the first diode 531, the cathode of the first diode 531, the cathode of the second diode 532, the anode of the second diode 532, and the output terminal 502 are connected in series in sequence.As shown in conjunction with the first series structure 511 and the second series structure 512, the first series structure 511 includes a first end diode and a second end diode at each end. When the first series structure 511 includes only the first diode 521 and the second diode 522, the first end diode is the first diode 521, and the second end diode is the second diode 522. Similarly, when the second series structure 512 includes only the first diode 531 and the second diode 532, the first end diodes at both ends of the second series structure 512 are the first diode 531 and the second end diode is the second diode 532. The first polarity of the first diode 521 and the first polarity of the first diode 531 are connected in parallel to the input end 501. The example shown in FIG5 uses the first polarity as the anode. The second polarity of the second diode 522 and the second polarity of the second diode 532 are connected in parallel to the output end 502. The example shown in FIG5 uses the second polarity as the anode. It can be seen that the first polarity and the second polarity shown in FIG5 are the same and both are anodes. Each diode included in the switch module shown in this embodiment can be a PIN diode (positive intrinsic negative diode, PIN diode). This embodiment does not limit the type of diode, as long as the diode has unidirectional conductivity. This embodiment does not limit the semiconductor material used to make the diode. For example, semiconductor materials include but are not limited to silicon (Silicon), gallium nitride (GaN), gallium arsenide (GaAs), or silicon carbide (SiC).

[0070] Figure 6 illustrates an exemplary structure of a switch module including the switch die shown in Figure 5 . The switch module 600 includes a first capacitor 601, a second capacitor 602, a first inductor 603, a second inductor 604, a third inductor 605, and a switch die 401. The structure of the switch die 401 is described in Figure 5 and is not further described here. The first capacitor 601 is connected in series between the circuit input terminal 611 and the input terminal of the switch die 401. The second capacitor 602 is connected in series between the circuit output terminal 612 and the output terminal of the switch die 401. The first series connection includes a first electrical connection point 621, and the second series connection includes a second electrical connection point 622. The first electrical connection point 621 is located between the first diode 521 and the second diode 522, and the second electrical connection point 622 is located between the first diode 531 and the second diode 532. The first electrical connection point 621, the second electrical connection point 622, the second inductor 604, and the first electrical connection terminal 631 are connected in series in sequence. A third electrical connection point 623 is provided between the first capacitor 601 and the input terminal of the switch die 401. The third electrical connection point 623, the first inductor 603, and the second electrical connection terminal 632 are sequentially connected in series. A fourth electrical connection point 624 is provided between the second capacitor 602 and the output terminal of the switch die 401. The fourth electrical connection point 624, the third inductor 605, and the third electrical connection terminal 633 are sequentially connected in series.

[0071] In this embodiment, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 are each connected to an electrical port of a processor. The processor can then apply a voltage or current to the switch die via the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 to control the on / off state of the switch die 401. In this embodiment, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 are connected to the processor as an example. In other examples, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 can be connected to any chip included in the communication device. If the switch die 401 needs to be turned on, the processor applies a first forward bias voltage to the first series connection and a second forward bias voltage to the second series connection via the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633. The first forward bias voltage is used to turn on each diode in the first series connection. The second forward bias voltage is used to turn on each diode in the second series connection. It can be understood that when the first series structure is applied with a first forward bias voltage and the second series structure is applied with a second forward bias voltage, the four diodes included in the switch core 401, namely the first diode 521, the first diode 531, the second diode 522 and the second diode 531, are all in a conductive state. Then, the radio frequency signal input by the circuit input terminal 611 can be conducted to the circuit output terminal 612. The voltage applied to the switch core 401 by the second electrical connection terminal 632 and the third electrical connection terminal 633 can also control the conduction loss of the switch core 401. This embodiment takes the first electrical connection point 621, the second electrical connection point 622 and the first electrical connection point 631 as an example. In other examples, the first electrical connection point 621 and the second electrical connection point 622 can also be connected to different electrical ports of the processor, or the first electrical connection point 621 and the second electrical connection point 622 can also be connected to different processors or chips. If it is necessary to turn off the switch die 401, the processor applies a first reverse bias voltage to the first series structure and a second reverse bias voltage to the second series structure via the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633. The first reverse bias voltage is used to turn off each diode included in the first series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure. It can be understood that when the first reverse bias voltage is applied to the first series structure and the second reverse bias voltage is applied to the second series structure, the four diodes included in the switch die 401, namely the first diode 521, the first diode 531, the second diode 522, and the second diode 531, are all in the off state. Therefore, the circuit between the circuit input terminal 611 and the circuit output terminal 612 is in the off state.It should be clear that the description of the electrical connection points and the connection relationship between the connection points included in the switch module in this embodiment is an optional example and is not limited, as long as the different diodes included in the switch core are all in the on or off state.

[0072] In this embodiment, each series structure includes an even number of submodules, and the polarity direction of the diode at the first end of each series structure is opposite to the polarity direction of the diode at the second end, taking the example of ensuring that the first polarity connected to the input end and the second polarity connected to the output end are the same, which is not limited to this. In other examples, each series structure includes multiple submodules, and the number of submodules included is an odd number, and the polarity direction of the diode at the first end of each series structure is the same as the polarity direction of the diode at the second end, then the first polarity of the first end diode is connected to the input end, and the second polarity of the second end diode is connected to the output end, and the first polarity and the second polarity are opposite.

[0073] The switch module shown in this embodiment is used to effectively ensure that all diodes included in the series structure are in the on or off state. When the multiple diodes included in the switch core are all in the on state, the circuit between the circuit input end and the circuit output end of the switch module is in the on state, achieving the purpose of inputting the RF signal from the circuit input end and outputting it from the circuit output end via the switch module. When the multiple diodes included in the switch core are all in the off state, the circuit between the circuit input end and the circuit output end of the switch module is in the off state. The switch module provided by this embodiment can improve the linearity range and withstand voltage of the switch module without increasing the number of diodes or increasing the complexity of the switch module circuit. Moreover, while improving the linearity range and withstand voltage of the switch module, it ensures that indicators such as the switch module insertion loss and the switch module switching time are not reduced, effectively limiting the mutual constraints between indicators such as the linearity range, withstand voltage, power, insertion loss and switch module switching time in the switch module.

[0074] The description of the connection method of the diodes shown in Figure 5 is an optional example and is not limiting. For example, as shown in Figure 7, Figure 7 is an example diagram of the structure of the second embodiment of the switch core provided by this application. The difference between the switch core shown in Figure 7 and the switch core shown in Figure 5 is that the polarity direction of each diode is different. Specifically, the switch core 700 shown in this embodiment includes an input terminal 701, an output terminal 702, and M series structures. M is any integer greater than 1. The example shown in Figure 7 takes M=2 as an example. Then, the switch core 700 includes a first series structure 711 and a second series structure 712. The first series structure 711 includes two first submodules and a second submodule connected in series. The polarity direction of the diode included in the first submodule is opposite to the polarity direction of the diode included in the second submodule. For the description of the polarity direction of the diode, please refer to the corresponding description of Figure 5 and will not be repeated in detail. For example, if the first submodule includes a first diode 721 and the second submodule includes a second diode 722, then the polarity direction of the first diode 721 is opposite to the polarity direction of the second diode 722. It can be understood that in the first series structure 711, the input end 701, the cathode of the first diode 721, the anode of the first diode 721, the anode of the second diode 722, the cathode of the second diode 722, and the output end 702 are connected in series in sequence. Similarly, the second series structure 712 includes two first submodules and a second submodule connected in series. For example, the first submodule includes a first diode 731 and the second submodule includes a second diode 732. The polarity direction of the first diode 731 is opposite to the polarity direction of the second diode 732. For specific details, please refer to the description of the polarity direction of the first diode 721 being opposite to the polarity direction of the second diode 722. The details are not repeated here. In the second series structure 712, the input end 701, the cathode of the first diode 731, the anode of the first diode 731, the anode of the second diode 732, the cathode of the second diode 732, and the output end 702 are connected in series. As shown in conjunction with the first series structure 711 and the second series structure 712, the two ends of the first series structure 711 include a first end diode and a second end diode, respectively. When the first series structure 711 includes only the first diode 721 and the second diode 722, the first end diode is the first diode 721, and the second end diode is the second diode 722. Similarly, when the second series structure 712 includes only the first diode 731 and the second diode 732, the first end diode is the first diode 731, and the second end diode is the second diode 732. The first polarity of the first diode 721 and the first polarity of the first diode 731 are connected in parallel to the input terminal 701. The example shown in FIG7 uses the first polarity as the cathode.The second polarity of the second diode 722 and the second polarity of the second diode 732 are connected in parallel to the output terminal 702. The example shown in FIG7 takes the second polarity as the cathode. It can be seen that the first polarity and the second polarity shown in FIG7 are the same and are both cathodes. The first diode 721, the second diode 722, the first diode 731, and the second diode 732 included in the switch die shown in FIG7 are all in the on state or in the off state. For details, please refer to the corresponding description of FIG6 and will not be repeated here.

[0075] 5 and 7 take the example of a switch die including two series structures, and each series structure including two diodes connected in series with each other. It should be clarified that the number of series structures included in the switch die shown in the embodiment of the present application only needs to be greater than or equal to 2, and the specific number is not limited. Moreover, the number of diodes connected in series with each other included in each series structure only needs to be greater than or equal to 2, and the specific number is not limited. The number of series structures included in the switch die and the number of diodes included in each series structure are related to the power, reliability and performance that the switch module can withstand. For example, FIG8 is an example diagram of the structure of the third embodiment of the switch die provided in the present application. The switch die 800 shown in this embodiment includes an input terminal 801, an output terminal 802 and M series structures. M is any integer greater than 1. The example shown in FIG8 takes M=4 as an example. Then, the switch die 800 includes a first series structure 811, a second series structure 812, a third series structure 813 and a fourth series structure 814. The first series structure 811 includes four submodules connected in series, each of the four submodules includes a diode, that is, the first series structure 811 includes a diode 821, a diode 822, a diode 823, and a diode 824. The polarity directions of any two adjacent diodes included in the first series structure 811 are opposite. It can be understood that the polarity direction of diode 821 is opposite to the polarity direction of diode 822, the polarity direction of diode 822 is opposite to the polarity direction of diode 823, and the polarity direction of diode 823 is opposite to the polarity direction of diode 824. For an explanation of the polarity direction of the diodes, please refer to the corresponding description of FIG5, which will not be repeated in detail. Specifically, the input terminal 801, the anode of diode 821, the cathode of diode 821, the cathode of diode 822, the anode of diode 822, the anode of diode 823, the cathode of diode 823, the cathode of diode 824, the anode of diode 824, and the output terminal 802 are connected in series in sequence. For the description of the second series structure 812, the third series structure 813, and the fourth series structure 814, please refer to the description of the first series structure 811, and the details are not repeated here. In combination with the first series structure 811, the second series structure 812, the third series structure 813, and the fourth series structure 814, the two ends of the first series structure 811 respectively include a first end diode (i.e., diode 821) and a second end diode (i.e., diode 824). The two ends of the second series structure 812 respectively include a first end diode 825 and a second end diode 828. The two ends of the third series structure 813 respectively include a first end diode 826 and a second end diode 829. The two ends of the fourth series structure 814 respectively include a first end diode 827 and a second end diode 830.The first polarity of first end diode 821, the first polarity of first end diode 825, the first polarity of first end diode 826, and the first polarity of first end diode 827 are connected in parallel to input terminal 801, and the second polarity of second end diode 824, the second polarity of second end diode 828, the second polarity of second end diode 829, and the second polarity of second end diode 830 are connected in parallel to output terminal 802. The example shown in FIG8 uses the first polarity as the anode and the second polarity as the anode as an example. It can be seen that the first polarity and the second polarity shown in FIG8 are the same and are both anodes.

[0076] To ensure that all diodes included in the switch die are either turned on or off, each series structure shown in this embodiment includes an electrical connection point between any two adjacent submodules. Taking the first series structure 811 as an example, when each submodule includes a diode, a first electrical connection point 841 is connected between diode 821 and diode 822, between diode 822 and diode 823, and between diode 823 and diode 824. A second electrical connection point 842 is connected between the input terminal 801 and diode 821, and a third electrical connection point 843 is connected between the anode of diode 824 and the output terminal 802. The first electrical connection point 841, the second electrical connection point 842, and the third electrical connection point 843 are used to apply a forward bias voltage or a reverse bias voltage to the first series structure 811. For details, please refer to the corresponding description of Figure 6, and the details are not repeated here. It can be understood that when a forward bias voltage is applied to the first series structure 811 by the first electrical connection point 841, the second electrical connection point 842, and the third electrical connection point 843, all four diodes included in the first series structure 811 are in a conducting state. For the description of all diodes included in the second series structure 812, the third series structure 813, and the fourth series structure 814 being in a conducting state, please refer to the description of the first series structure 811. It can be seen that all diodes included in the switch die shown in this embodiment can be in a conducting state. When a reverse bias voltage is applied to the first series structure 811 by the first electrical connection point 841, the second electrical connection point 842, and the third electrical connection point 843, all four diodes included in the first series structure 811 are in a turning-off state. For the description of all diodes included in the second series structure 812, the third series structure 813, and the fourth series structure 814 being in a turning-off state, please refer to the description of the first series structure 811. All diodes included in the switch die shown in this embodiment are in a turning-off state. It should be noted that the description of the position of the electrical connection point included in the first series structure 811 in this embodiment is an optional example, as long as each diode included in the switch die is applied with a forward bias voltage or a reverse bias voltage.

[0077] The positions of the input terminal 801 and the output terminal 802 shown in this embodiment are interchangeable. It should be noted that this embodiment uses the example of a switch die including four series structures. In other examples, the switch die may include any number of series structures. This embodiment uses the example of each series structure including four diodes. In other examples, each series structure may include any number of two or more diodes.

[0078] The above embodiment uses a switch module including one switch die as an example. It should be noted that the present embodiment does not limit the number of switch dies included in the switch module. For example, Figure 9 shows a structural diagram of a second embodiment of the switch module provided in this application. The switch module shown in this embodiment includes a circuit input terminal 904, a first circuit output terminal 905, and a second circuit output terminal 906. The switch module shown in this embodiment includes a first switch die and a second switch die, wherein the first switch die and the second switch die each include M series structures, where M is any integer greater than 1. The example shown in Figure 9 uses M=2 as an example. It should be noted that the value of M is not limited in this embodiment. The first switch die includes a first series structure 911 and a second series structure 912. The second switch die includes a first series structure 913 and a second series structure 914. The first series structure 911 includes two submodules connected in series, each of which includes a diode. That is, the first series structure 911 includes a diode 921 and a diode 922. For the description of the structure of the first series structure 911, please refer to the description of the first series structure 511 corresponding to Figure 5, and the details are not repeated here. It should be noted that the structure of the first series structure 911 shown in this embodiment can also refer to the structure shown in Figure 7 or Figure 8, and the specific details are not limited thereto. By analogy, the second series structure 912 includes a diode 931 and a diode 932. The first series structure 913 of the second switch die includes a diode 941 and a diode 942, and the second series structure 914 includes a diode 951 and a diode 952. For the description of the structures of the second series structure 912, the first series structure 913, and the second series structure 914, please refer to the description of the first series structure 911, and the details are not repeated here. In the embodiment shown in Figure 9, the first switch die and the second switch die share the same input terminal, that is, the diode 921, the diode 931, the diode 941, and the diode 951 are connected in parallel to the input terminal 901. The diode 922 and the diode 932 are connected in parallel to the first output terminal 902, and the first output terminal 902 of the first switch die is connected to the first circuit output terminal 905. Diodes 942 and 952 are connected in parallel to the second output terminal 903. The second output terminal 903 of the second switch die is connected to the second circuit output terminal 906. In this embodiment, all diodes included in the first switch die are either in the on state or in the off state. Similarly, all diodes included in the second switch die are either in the on state or in the off state. When all diodes included in the first switch die are in the on state and all diodes included in the second switch die are in the off state, the circuit between the circuit input terminal 904 and the first circuit output terminal 905 is in the on state, and the circuit between the circuit input terminal 904 and the second circuit output terminal 906 is in the off state.When all diodes included in the first switch die are in the off state and all diodes included in the second switch die are in the on state, the circuit between circuit input terminal 904 and first circuit output terminal 905 is in the off state, and the circuit between circuit input terminal 904 and second circuit output terminal 906 is in the on state. For a description of whether the first switch die and the second switch die are respectively on or off, please refer to the corresponding description of FIG. 6, and the details are not repeated here.

[0079] This embodiment takes the example of a switch module including one circuit input terminal and two circuit output terminals. In other examples, the switch module may include any number of circuit input terminals and any number of circuit output terminals. This embodiment does not limit the number of circuit input terminals and circuit output terminals included in the switch module. The positions of the circuit input terminal and the circuit output terminal shown in this embodiment are interchangeable, the positions of the input terminal and the output terminal of the first switch die are interchangeable, and the positions of the input terminal and the output terminal of the second switch die are also interchangeable. It should be clarified that this embodiment takes the example of a switch module including two switch dies. In other examples, the switch module may include any number of more than two switch dies. The specific number of switch dies included in the switch module is not limited. This embodiment takes the example of each series structure including two diodes. In other examples, each series structure may include any number of more than two diodes.

[0080] In the above embodiment, taking the example that each submodule in each switch core includes a diode, in the embodiment shown in Figure 10, each submodule may include multiple diodes, wherein Figure 10 is an example diagram of the structure of the fourth embodiment of the switch core provided in this application. The switch core 1000 shown in this embodiment includes an input terminal 1001, an output terminal 1002, and M series structures. M is any integer greater than 1. The example shown in Figure 10 takes M=4 as an example, then the switch core 1000 includes a first series structure, a second series structure, a third series structure, and a fourth series structure. For the description of the first series structure, the second series structure, the third series structure, and the fourth series structure connected between the input terminal 1001 and the output terminal 1002, please refer to the corresponding description of Figure 8, and the details will not be repeated. Taking the first series structure as an example, the first series structure includes a first submodule 1011 and a second submodule 1012. The first submodule 1011 includes two diodes 1021 and a diode 1022 connected in series with each other. The polarity directions of the multiple diodes located in the same first submodule are the same. It can be seen that the polarity direction of diode 1021 is the same as that of diode 1022. For the description of the polarity direction of the diodes, please refer to the corresponding description of Figure 5, which will not be described in detail. The polarity directions of the multiple diodes located in the same second submodule are the same. It can be seen that the polarity direction of diode 1023 is the same as that of diode 1024. It can be understood that in the first series structure, the input end 1001, the anode of diode 1021, the cathode of diode 1021, the anode of diode 1022, the cathode of diode 1022, the cathode of diode 1023, the anode of diode 1023, the cathode of diode 1024, the anode of diode 1024 and the output end 1002 are connected in series in sequence. For the description of the second series structure, the third series structure and the fourth series structure, please refer to the description of the first series structure, which will not be described in detail. It can be understood that the first polarity of the first end diodes included in the four series structures is connected in parallel to the input terminal 1001, and the second polarity of the second end diodes included in the four series structures is connected in parallel to the output terminal 1002. This embodiment uses the first polarity and the second polarity as an example, where both are anodes. For a description of the first end diodes and the second end diodes, please refer to the corresponding description of FIG. 8 and will not be repeated here.

[0081] This embodiment uses the example of each series structure including two submodules, but this is not limiting. Any number of submodules, two or more, can be used. This embodiment uses the example of each submodule including two diodes. In other examples, each submodule can include any number of diodes, two or more, as long as the polarity directions of the different diodes in the same submodule are the same.

[0082] To achieve the goal of ensuring that all diodes included in the switch core are either turned on or turned off, taking the first series structure as an example, a third electrical connection point 1041 is connected between the first submodule 1011 and the input terminal 1001, a first electrical connection point 1042 is connected between the first submodule 1011 and the second submodule 1012, and a fourth electrical connection point 1043 is connected between the second submodule 1012 and the output terminal 1002. For a description of the electrical connection points, please refer to the corresponding description in FIG6 , and details are not repeated here. The first electrical connection point 1042, the third electrical connection point 1041, and the fourth electrical connection point 1043 apply a forward bias voltage to each diode included in the first submodule 1011 and the second submodule 1012, so that all four diodes included in the first series structure are in a conductive state. For a description of the conductive state of all diodes included in the second, third, and fourth series structures, please refer to the description of the first series structure. It can be seen that all diodes included in the switch core shown in this embodiment can be in a conductive state. The first electrical connection point 1042, the third electrical connection point 1041 and the fourth electrical connection point 1043 apply a reverse bias voltage to the first submodule 1011 so that the four diodes included in the first series structure are all in the off state. For the description of all the diodes included in the second series structure, the third series structure and the fourth series structure being in the off state, please refer to the description of the first series structure. It can be seen that all the diodes included in the switch core shown in this embodiment are in the off state. Optionally, the description of the position of the electrical connection points included in the series structure in this embodiment is an optional example. For example, an electrical connection point can also be connected between two adjacent diodes in the same submodule. There is no specific limitation. As long as all the diodes included in the switch core are in the on state, a forward bias voltage can be applied to each diode included in the switch core. If all the diodes included in the switch core are required to be in the off state, a reverse bias voltage can be applied to each diode included in the switch core.

[0083] This embodiment does not limit the number of switch dies included in the switch module. For example, as shown in FIG11, FIG11 is a structural diagram of the third embodiment of the switch module provided in this application. The switch module shown in this embodiment includes a first circuit input terminal 1101, a second circuit input terminal 1102, and a circuit output terminal 1103. The switch module includes a first switch die 1111, a second switch die 1112, a third switch die 1113, and a fourth switch die 1114. For a detailed description of the structure of the first switch die 1111 in this embodiment, please refer to FIG5. It should be noted that the structure of the first switch die 1111 shown in this embodiment can also be referred to as shown in FIG7, FIG8, FIG9, or FIG10. For a description of the structure of the second switch die 1112, the third switch die 1113, and the fourth switch die 1114, please refer to the description of the structure of the first switch die 1111. Details are not repeated here. The input end of the first switch die 1111 and the input end of the second switch die 1112 are connected in parallel to the first circuit input end 1101, the output end of the second switch die 1112 is grounded, the output end of the first switch die 1111 and the input end of the third switch die 1113 are connected in parallel to the circuit output end 1103, the output end of the third switch die 1113 and the input end of the fourth switch die 1114 are connected in parallel to the second circuit input end 1102, and the output end of the fourth switch die 1114 is grounded.

[0084] In this embodiment, the switch module can function as a single-pole, double-throw (SPDT) switch, wherein the first circuit input terminal 1101 and the second circuit input terminal 1102 function as double-throw (DPT) switches, and the circuit output terminal 1103 functions as a single-pole (SPDT) switch. To achieve circuit continuity between the first circuit input terminal 1101 and the circuit output terminal 1103, a forward bias voltage is applied to each diode included in the first switch die 1111 to turn on the first switch die 1111. A reverse bias voltage is applied to each diode included in the second switch die 1112 to turn off the second switch die 1112. A reverse bias voltage is applied to each diode included in the third switch die 1113 to turn off the third switch die 1113. A forward bias voltage is applied to each diode included in the fourth switch die 1114 to turn on the fourth switch die 1114. It can be understood that when the first switch die 1111 and the fourth switch die 1114 are in the on state, and the second switch die 1112 and the third switch die 1113 are in the off state, the circuit between the first circuit input terminal 1101 and the circuit output terminal 1103 of the switch module is conductive. Similarly, to achieve circuit conductivity between the second circuit input terminal 1102 and the circuit output terminal 1103, a reverse bias voltage is applied to each diode included in the first switch die 1111 to turn off the first switch die 1111. A forward bias voltage is applied to each diode included in the second switch die 1112 to turn on the second switch die 1112. A forward bias voltage is applied to each diode included in the third switch die 1113 to turn on the third switch die 1113. A reverse bias voltage is applied to each diode included in the fourth switch die 1114 to turn off the fourth switch die 1114. It can be understood that when the first switch die 1111 and the fourth switch die 1114 are in the off state, and the second switch die 1112 and the third switch die 1113 are in the on state, the circuit between the second circuit input terminal 1102 and the circuit output terminal 1103 included in the switch module is conductive. For the description of whether the different diodes included in each switch die in this embodiment are all in the on state or all in the off state, please refer to the corresponding description of FIG. Detailed description is omitted here.

[0085] It should be noted that the positions of the circuit input and circuit output shown in this embodiment are interchangeable. This embodiment does not limit the number of switch dies connected between the circuit input and circuit output included in the switch module, nor the connection method between the multiple switch dies. This embodiment uses the example of the switch module having the same structure for different switch dies. In other examples, the structures of the different switch dies may also be different.

[0086] The following describes the packaging structure of the switch module provided in an embodiment of the present application. Figure 12 is an example diagram of a top view packaging structure of the first switch module provided in the present application, and Figure 13 is an example diagram of a side view packaging structure of the switch module shown in Figure 12. The switch module shown in this embodiment includes a substrate. In this embodiment, the substrate is used as a frame as an example. The frame shown in this embodiment is made of a conductive material, for example, the frame is made of metal copper (CU) or a copper alloy. Specifically, the frame includes a first conductive region 1201, a second conductive region 1202, and a third conductive region 1203. Any two adjacent conductive regions among the first conductive region 1201, the second conductive region 1202, and the third conductive region 1203 are isolated from each other. The switch module includes a first series structure 1211. For a description of the structure of the first series structure 1211, please refer to Figures 4, 5, 7, 8, or 10, and detailed description is omitted. Each diode included in the first series structure 1211 is bonded to the first surface of the second conductive region 1202 to achieve series connection between the two adjacent diodes included in the first series structure 1211 through the second conductive region 1202. For example, the first series structure 1211 includes a diode 1221 and a diode 1222. The diode 1221 is connected in series with the diode 1222 through the second conductive region 1202. Specifically, the diode 1221 and the diode 1222 are respectively bonded to the first surface of the second conductive region 1202 by conductive glue or the like. The first series structure 1211 is electrically connected to the first conductive region 1201 through a first electrical path 1231. The first conductive region serves as the input end 1201 of the switch die. The first electrical path 1231 shown in this embodiment can be a medium capable of signal transmission, such as a wire, a cable, or a circuit board. The first series structure 1211 is electrically connected to the third conductive region 1203 through a second electrical path 1232. The third conductive region 1203 serves as the output end of the switch die. For a description of the input and output ends of the switch die, please refer to Figures 4, 5, 7, 8, or 10, and detailed description is omitted. Optionally, the entire switch die shown in this embodiment may be sealed in an airtight package or sealed with a high thermal conductivity dielectric material 1240 , where the dielectric material 1240 includes but is not limited to silicon nitride or diamond.

[0087] FIG14 is another side view of the packaging structure example of the switch module shown in FIG12 . In the example shown in FIG14 , the diode 1221 and the diode 1222 included in the first series structure 1211 are packaged as a whole through monolithic integration. As shown in FIG14 , the diode 1221 and the diode 1222 included in the first series structure 1211 are connected through semiconductor interconnect materials. It can be understood that during the manufacturing stage, the diode 1221 and the diode 1222 included in the first series structure 1211 can be packaged on the same wafer to make a first series structure as a whole, which effectively reduces the overall volume of the first series structure and improves the integration of the first series structure. The M series structures included in the switch die shown in this embodiment can be packaged on the same wafer as M series structures as a whole.

[0088] FIG15 is a side view of another exemplary packaging structure of the switch module shown in FIG12 . In the examples shown in FIG13 and FIG14 , the switch die includes a first series structure 1211 connected to the first surface of the second conductive region 1202 of the frame. In the embodiment shown in FIG15 , the switch die also includes a second series structure 1212 connected to the second surface of the second conductive region 1202 of the frame. The first surface and the second surface are two opposing surfaces of the second conductive region 1202 of the frame. The structure of the second series structure 1212 is described in FIG4 , FIG5 , FIG7 , FIG8 , or FIG10 , and is not further described here. The second series structure 1211 is electrically connected to the first conductive region 1201 via a third electrical path 1501. The second series structure 1211 is electrically connected to the third conductive region 1203 via a fourth electrical path 1502. For descriptions of the third and fourth electrical paths 1501 and 1502, refer to the description of the first electrical path 1231 and are not further described here. This embodiment does not limit the number of second series structures connected to the second surface of the second conductive region 1202. The second series structures connected to the second surface of the second conductive region 1202 can also adopt a structure interconnected by a semiconductor interconnect material as shown in FIG14 . For details, please refer to the corresponding description of FIG14 , and the details are not repeated here.

[0089] Figures 12 to 15 illustrate an example in which the first surface of the second conductive region of the frame is connected to a single layer of series structure. In the embodiment shown in Figure 16, the first surface of the second conductive region of the frame can be connected to multiple layers of series structure. Figure 16 is a side view of an exemplary packaging structure of the second switch module provided in this application. The switch module shown in this embodiment includes a frame, which is made of a conductive material. For a detailed description, please refer to the corresponding description of Figure 12, and no further details are given. The frame includes a first conductive region 1601, a second conductive region 1602, a third conductive region 1603, a fourth conductive region 1604, and a fifth conductive region 1605. Any two adjacent conductive regions among the first conductive region 1601, the second conductive region 1602, the third conductive region 1603, the fourth conductive region 1604, and the fifth conductive region 1605 are isolated from each other. The switch module includes a first series structure 1611. For a description of the structure of the first series structure 1611, please refer to Figures 4, 5, 7, 8, or 10, and no further details are given. Each diode included in the first series structure 1611 is bonded to the first surface of the second conductive region 1602, so that the series connection between the two adjacent diodes included in the first series structure 1611 is achieved through the second conductive region 1602. For the description of the connection of the first series structure 1611 to the first surface of the second conductive region 1602, please refer to the corresponding description of Figure 12, and the details are not repeated here. The first series structure 1611 is electrically connected to the first conductive region 1601 via a first electrical path 1631, and the first conductive region 1601 serves as the input end of the switch die. The first series structure 1611 is electrically connected to the third conductive region 1603 via a second electrical path 1632, and the third conductive region 1603 serves as the output end of the switch die. For the description of the first electrical path 1631 and the second electrical path 1632, please refer to the corresponding description of Figure 12, and the details are not repeated here. The switch die shown in this embodiment also includes a third series structure 1612, and the first series structure 1611 is connected between the third series structure 1612 and the first surface of the second conductive region 1602. It can be understood that the third series structure 1612 is connected to the surface of the first series structure 1611 facing away from the first surface of the second conductive region 1602. The structure of the third series structure 1612 is described in Figures 4, 5, 7, 8, or 10, and is not further described here. Any two adjacent diodes included in the third series structure 1611 are connected in series via an electrical path 1613. The third series structure 1612 is electrically connected to the fourth conductive region 1604 via a fourth electrical path 1621, and the third series structure 1612 is electrically connected to the fifth conductive region 1605 via a fifth electrical path 1622.For the description of the electrical path 1613, the fourth electrical path 1621, and the fifth electrical path 1622, please refer to the description of the first electrical path 1231 corresponding to Figure 12, and no further details are given. Optionally, the switch die shown in this embodiment can be packaged in an air-sealed form or sealed with a high thermal conductivity medium material. For specific details, please refer to the description corresponding to Figure 12, and no further details are given. The first series structure 1613 and the third series structure 1612 shown in this embodiment can be packaged as a whole by monolithic integration. For specific details, please refer to Figure 14. No further details are given. Optionally, the second surface of the second conductive region 1602 shown in this embodiment can encapsulate a second series structure. For the description of the packaging, please refer to the description corresponding to Figure 15, and no further details are given.

[0090] In the embodiments shown in Figures 12 to 16, different diodes in the same series structure are packaged on the same surface of the second conductive region. For example, all diodes included in the first series structure are packaged on the first surface of the second conductive region. For another example, all diodes included in the second series structure are packaged on the second surface of the second conductive region. In the switch die shown in Figure 17, the same series structure can be packaged on different surfaces of the second conductive region. Figure 17 is an example of a side view packaging structure of the third switch module provided by this application. The switch module shown in this embodiment includes a frame. The frame shown in this embodiment is made of a conductive material. For a detailed description, please refer to the corresponding description of Figure 12. The details are not repeated here. The frame includes a first conductive region 1701, a second conductive region 1702, and a third conductive region 1703. Any two adjacent conductive regions among the first conductive region 1701, the second conductive region 1702, and the third conductive region 1703 are isolated from each other. The switch module includes a first series structure 1711. The structure of the first series structure 1711 is described in Figures 4, 5, 7, 8, or 10. The details are not repeated here. The first series structure 1711 includes a diode 1721 and a diode 1722. Diode 1721 is connected to the first surface of the second conductive region 1702, and diode 1722 is connected to the second surface of the second conductive region 1702. For the description of the first surface and the second surface of the second conductive region 1702, please refer to the corresponding description of Figure 15, and the details are not repeated here. Diode 1721 and diode 1722 are connected in series through the second conductive region 1702. The first series structure 1711 is electrically connected to the first conductive region 1701 through a first electrical path 1731. The first conductive region 1701 serves as the input end of the switch die. The first series structure 1711 is electrically connected to the third conductive region 1703 through a second electrical path 1732. The third conductive region 1703 serves as the output end of the switch die. For the description of the first electrical path 1731 and the second electrical path 1732, please refer to the corresponding description of Figure 12, and the details are not repeated here. The switch die shown in this embodiment also includes a second series structure 1712. For a description of the structure of the second series structure 1712, please refer to Figures 4, 5, 7, 8, or 10, and no further details are given. The second series structure 1712 includes a diode 1723 and a diode 1724. Diode 1723 is connected to the first surface of the second conductive region 1702, and diode 1724 is connected to the second surface of the second conductive region 1702. For a description of the first surface and the second surface of the second conductive region 1702, please refer to the corresponding description of Figure 15, and no further details are given. Diode 1723 and diode 1724 are connected in series through the second conductive region 1702.The second series structure 1712 is electrically connected to the first conductive region 1701 via a third electrical path 1733. The first conductive region 1701 serves as the input terminal of the switch die. The second series structure 1712 is electrically connected to the third conductive region 1703 via a fourth electrical path 1734. The third conductive region 1703 serves as the output terminal of the switch die. For a description of the third electrical path 1733 and the fourth electrical path 1734, please refer to the corresponding description of FIG. 12 and will not be repeated here.

[0091] Figure 18 is a side view of an exemplary packaging structure of the fourth switch module provided in this application. The switch module shown in this embodiment includes a substrate. This embodiment uses a circuit board or ceramic board as an example. This embodiment does not limit the type of circuit board. For example, the circuit board is a printed circuit board (PCB). The circuit board includes a first conductive region 1801, a second conductive region 1802, and a third conductive region 1803. Any two adjacent conductive regions among the first conductive region 1801, the second conductive region 1802, and the third conductive region 1803 are isolated from each other. The switch module includes a first series structure 1811. For a description of the structure of the first series structure 1811, please refer to Figures 4, 5, 7, 8, or 10. The details are not repeated here. Each diode included in the first series structure 1211 is electrically connected to the first surface of the second conductive region 1202. The multiple diodes included in the first series structure 1211 are electrically connected via conductive traces in the circuit board. The first series structure 1811 is electrically connected to the first conductive region 1801 via a first electrical path 1831. The first conductive region 1801 serves as the input end of the switch core, and the first electrical path 1831 shown in this embodiment can be a medium that can realize signal transmission, such as a wire, a cable or a circuit board. The first series structure 1811 is electrically connected to the third conductive region 1803 through the second electrical path 1832. The third conductive region 1803 serves as the output end of the switch core. For the description of the input and output ends of the switch core, please refer to Figures 4, 5, 7, 8 or 10, and the details are not repeated here. Among them, the ground electrode 1841 of the first series structure 1811 is electrically connected to the corresponding contact electrode 1842 on the circuit board, and the contact electrode 1842 on the circuit board is electrically connected to the ground plane 1843 through the conductive through-hole 1844 in the circuit board.

[0092] The second surface of the circuit board shown in this embodiment can also be connected to a second series structure. For specific instructions, please refer to the corresponding instructions in Figure 15. The surface of the first series structure shown in this embodiment facing away from the circuit board can also be connected to a third series structure. For specific instructions, please refer to the corresponding instructions in Figure 16. No further details will be given. The multiple diodes included in the first series structure shown in this embodiment are connected by semiconductor interconnect materials. For specific instructions, please refer to the corresponding instructions in Figure 14. No further details will be given. A part of the diodes included in the first series structure shown in this embodiment can be connected to the first surface of the circuit board, and another part of the diodes included in the first series structure can be connected to the second surface of the circuit board. For specific instructions, please refer to the corresponding instructions in Figure 17. No further details will be given.

[0093] This application also provides a communication device. For the description of the communication device, please refer to the corresponding description of Figure 3 and the details will not be repeated here.

[0094] This application also provides a communication system. For a description of the communication system, please refer to the corresponding description in Figure 2 and the details will not be repeated here.

[0095] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A switch module, characterized in that: The circuit comprises a circuit input terminal, a circuit output terminal and at least one switch die, wherein the at least one switch die is connected between the circuit input terminal and the circuit output terminal, and the at least one switch die is used to turn on or off the circuit between the circuit input terminal and the circuit output terminal; The switch core includes an input end, an output end and M series structures, where M is any integer greater than 1, the M series structures are connected in parallel to the input end, and the M series structures are connected in parallel to the output end, each of the M series structures includes a plurality of sub-modules connected in series with each other, each of the sub-modules includes a diode or a plurality of diodes connected in series with each other, the plurality of sub-modules connected in series with each other include a first sub-module and a second adjacent sub-module, the first sub-module has a first polarity direction, the second sub-module has a second polarity direction, and the first polarity direction is opposite to the second polarity direction.

2. The switch module according to claim 1, characterized in that: The first submodule includes a first diode, the first polarity direction is the polarity direction of the first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

3. The switch module according to claim 1, characterized in that: The first submodule includes a plurality of first diodes connected in series. Among the plurality of first diodes connected in series, any two different first diodes have the same polarity direction. The first polarity direction is the polarity direction of each first diode. The direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

4. The switch module according to any one of claims 1 to 3, characterized in that: Both ends of each of the series structures include a first end diode and a second end diode, respectively, the first polarities of the M first end diodes included in the M series structures are connected in parallel to the input end, and the second polarities of the M second end diodes included in the M series structures are connected in parallel to the output end; If the series structure includes an even number of the submodules, the first polarity is the same as the second polarity; or, if the series structure includes an odd number of the submodules, the first polarity is opposite to the second polarity.

5. The switch module according to claim 1 or 2, characterized in that: The first submodule includes a first diode, the second submodule includes a second diode, the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end.

6. The switch module according to claim 1 or 2, characterized in that: The first submodule includes a first diode, the second submodule includes a second diode, the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end.

7. The switch module according to any one of claims 1 to 6, characterized in that: The M series structures include a first series structure, wherein a first electrical connection point is connected between any two adjacent submodules included in the first series structure, and the first electrical connection point is used to apply a first forward bias voltage or a first reverse bias voltage to the first series structure, and the first forward bias voltage is used to turn on each diode included in the first series structure, and the first reverse bias voltage is used to turn off each diode included in the first series structure.

8. The switch module according to claim 7, characterized in that: The M series structures also include a second series structure, a second electrical connection point is connected between any two adjacent sub-modules included in the second series structure, one of the first electrical connection points included in the first series structure is connected to one of the second electrical connection points included in the second series structure, the second electrical connection point is used to apply a second forward bias voltage or a second reverse bias voltage to the second series structure, the second forward bias voltage is used to turn on each diode included in the second series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure.

9. The switch module according to any one of claims 1 to 8, characterized in that: The switch module includes a switch core, the input end of the switch core is connected to the circuit input end, and the output end of the switch core is connected to the circuit output end.

10. The switch module according to any one of claims 1 to 8, characterized in that: The circuit input end specifically includes a first circuit input end and a second circuit input end, and the switch module includes a first switch die, a second switch die, a third switch die and a fourth switch die. The input end of the first switch die and the input end of the second switch die are connected in parallel to the first circuit input end, the output end of the second switch die is grounded, the output end of the first switch die and the input end of the third switch die are connected in parallel to the circuit output end, the output end of the third switch die and the input end of the fourth switch die are connected in parallel to the second circuit input end, and the output end of the fourth switch die is grounded.

11. The switch module according to any one of claims 1 to 10, characterized in that: The M series structures include a first series structure, the switch module also includes a substrate, the substrate includes a first conductive region, a second conductive region and a third conductive region, the first series structure is connected to a first surface of the second conductive region, the first series structure is connected to the first conductive region through a first electrical path, the first series structure is connected to the third conductive region through a second electrical path, the first conductive region serves as the input end, and the third conductive region serves as the output end.

12. The switch module according to claim 11, characterized in that: The M series structures include a second series structure, which is connected to the second surface of the second conductive region, connected to the first conductive region via a third electrical path, and connected to the third conductive region via a fourth electrical path.

13. The switch module according to claim 11, characterized in that: The M series structures include a third series structure, and along a direction perpendicular to the first surface of the second conductive region, the first series structure is located between the first surface of the second conductive region and the third series structure. The frame also includes a fourth conductive region and a fifth conductive region. The third series structure is connected to the fourth conductive region through a fifth electrical path, and the third series structure is connected to the fifth conductive region through a sixth electrical path. The fourth conductive region serves as the input end, and the fifth conductive region serves as the output end.

14. The switch module according to any one of claims 11 to 13, characterized in that: The first series structure is packaged on the same wafer.

15. A communication device, characterized in that: comprising a processor, J receiving channels and P transmitting channels, wherein J and P are any integers greater than 1, respectively, the J receiving channels and the P transmitting channels comprise at least one switch module according to any one of claims 1 to 14, and the processor is connected to the switch module; The processor is used to conduct at least one receiving channel among the J receiving channels through the switch module, and / or the processor is also used to conduct at least one transmitting channel among the P transmitting channels through the switch module.

16. The communication device according to claim 15, characterized in that The communication device also includes a baseband processor connected to each of the P transmission channels, each of the P transmission channels including a transmitter in the radio frequency transceiver, a transmission module in the radio frequency module, and a transmission antenna in the antenna; If the transmitting channel is in the on state, the baseband processor is used to send a first digital signal to the transmitting channel, the transmitter is used to convert the first digital signal into a first radio frequency signal, the transmitting module is used to process the first radio frequency signal to obtain a processed first radio frequency signal, and the transmitting antenna is used to emit the processed first radio frequency signal.

17. The communication device according to claim 15 or 16, characterized in that: The communication device also includes a baseband processor connected to each of the J receiving channels, each of the J receiving channels including a receiver in the radio frequency transceiver, a receiving module in the radio frequency module, and a receiving antenna in the antenna; If the receiving channel is in the on state, the receiving antenna is used to receive a second RF signal, the receiving module is used to process the second RF signal to obtain a processed second RF signal, the receiver is used to convert the processed second RF signal into a second digital signal, and the baseband processor is used to digitally process the second digital signal.

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