Light-emitting array substrate, light-emitting array chip and manufacturing method

Abstract

A light-emitting array substrate, a light-emitting array chip and a manufacturing method, which belong to the technical field of display. The light-emitting array substrate comprises a light-emitting diode unit and an electrode unit, wherein a first conductive electrode is arranged on a first side of the light-emitting diode unit, a second conductive electrode is arranged on a second side of the light-emitting diode unit, there is an independent potential connection relationship between the first conductive electrode and the second conductive electrode, a first conductive electrode is arranged on a first side of the electrode unit, and the first side of the light-emitting diode unit and the first side of the electrode unit are the same side; and a second conductive electrode of the electrode unit and the second conductive electrode of the light-emitting diode unit are connected to form a second conductive conducting channel.

Description

Light-emitting array substrate, light-emitting array chip, and manufacturing method

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on the Chinese patent application with application number: 202311260412.4 and application date of September 26, 2023, and claims the priority of the Chinese patent application. The entire content of the Chinese patent application is hereby introduced into this application as a reference. Technical Field

[0003] The present application relates to the field of display technology, and in particular to a light-emitting array substrate, a light-emitting array chip, and a manufacturing method thereof. Background Art

[0004] Micro-LED (Micro Light Emitting Diode Display) has been widely used due to its performance advantages such as high brightness, low energy consumption, fast response time, high contrast, high resolution and color saturation. For example, the monolithic integration of Micro-LED and CMOS (Complementary Metal Oxide Semiconductor) has become an ideal solution in the field of AR (Augmented Reality). With the demand for high PPI (pixels per inch, pixel density size) of display screens, display screens need to have smaller pixel pitches. Micro-LED and CMOS usually adopt vertical injection to achieve independent circuit control of each single pixel in the Micro LED array by CMOS. In the vertical injection type, the P electrode of each Micro-LED device is usually connected to the CMOS separately, and the N electrode of each Micro-LED device is short-circuited and connected to the CMOS together, which is referred to as a common N-pole connection. In the related art, there are two types of common N-pole connections:

[0005] Referring to Figure 1, a metal pipe is designed to penetrate the Micro-LED array. One end of the metal pipe is electrically connected to the N-pole metal, and the other end is electrically connected to the CMOS. However, such metal pipes are prone to underfilling when using conventional deposition processes. If electroplating is used for filling, it requires pre-deposition of a seed layer before electroplating, CMP (Chemical Mechanical Polishing) after electroplating, and a seed layer surface removal process. The electroplating process itself requires a wet chemical process, which is limited by equipment and environment.

[0006] As shown in Figure 2, the N-pole metal layer extends laterally toward the CMOS side to achieve electrical connection. However, the large coverage area of ​​the N-pole metal layer causes unnecessary light absorption, thereby reducing the device's luminous efficiency. As a result, the Micro LED array manufacturing process is complex and the luminous effect is poor.

[0007] Summary of the Invention

[0008] This application aims to solve at least one of the technical problems existing in the prior art. To this end, this application proposes a light-emitting array substrate, a light-emitting array chip, and a manufacturing method. By reusing the process and structure of a light-emitting diode unit, an electrode unit is formed to connect the electrodes at both ends of the light-emitting diode unit to the same side, simplifying the process and reducing costs.

[0009] In a first aspect, the present application provides a light-emitting array substrate, comprising a light-emitting diode unit and an electrode unit, wherein a first conductive type electrode is provided on a first side of the light-emitting diode unit, and a second conductive type electrode is provided on a second side, the first conductive type electrode and the second conductive type electrode having an independent potential connection relationship, the first conductive type electrode is provided on a first side of the electrode unit, and the first side of the light-emitting diode unit and the first side of the electrode unit are on the same side;

[0010] The second conductive type electrode of the electrode unit is connected to the second conductive type electrode of the light emitting diode unit to form a second conductive type conductive channel.

[0011] According to an embodiment of the present application, the second conductive type electrode of the electrode unit and the first conductive type electrode of the light emitting diode unit are manufactured using the same manufacturing process.

[0012] According to one embodiment of the present application, the second conductive electrode of the electrode unit and the first conductive electrode of the light-emitting diode unit are made of tin, gold, nickel, palladium, copper or an alloy including at least two of the above materials, and the second conductive electrode of the light-emitting diode unit is made of Ti / Al or Ti / Au.

[0013] According to an embodiment of the present application, the mesa of the electrode unit and the mesa of the light-emitting diode unit are at least partially formed by the same process.

[0014] According to one embodiment of the present application, the light-emitting array substrate further includes a conductive layer arranged on the second side of the light-emitting diode unit, and the conductive layer is respectively connected to the second conductive type electrode of the light-emitting diode unit and the second conductive type electrode corresponding to the electrode unit to form a conductive channel.

[0015] According to one embodiment of the present application, the electrode unit is provided with an opening passing through the table, the opening exposing the second conductive type electrode of the electrode unit toward the side where the conductive layer is located, and the conductive layer is connected to the second conductive type electrode of the electrode unit through the opening.

[0016] According to one embodiment of the present application, a filling structure is formed in the opening, and the filling structure covers the portion of the conductive layer located in the opening.

[0017] According to one embodiment of the present application, the filling structure is made of metal material.

[0018] According to one embodiment of the present application, an opening is provided in the connection region between the light emitting diode unit and the electrode unit, and the second conductive type electrode of the electrode unit extends along the outer wall of the mesa structure to the connection region and is exposed through the opening.

[0019] According to one embodiment of the present application, the mesa of the light emitting diode unit is connected to a portion of the mesa of the electrode unit close to the second side.

[0020] According to one embodiment of the present application, the light emitting array substrate includes a plurality of light emitting diode units, and the conductive layer is in contact with the second conductive type electrode corresponding to each light emitting diode unit.

[0021] According to one embodiment of the present application, the light emitting array substrate includes a plurality of electrode units, and the conductive layer is in contact with the first conductive type electrode corresponding to each electrode unit.

[0022] In a second aspect, the present application provides a light-emitting array chip, comprising a driving backplane and the aforementioned light-emitting array substrate, wherein the light-emitting array substrate is bonded to the driving backplane.

[0023] In a third aspect, the present application provides a method for manufacturing a light-emitting array substrate, comprising:

[0024] Providing a substrate and forming a light-emitting epitaxial layer on the substrate, wherein the light-emitting epitaxial layer has a first side and a second side opposite to each other, and the second side is the side where the substrate is located;

[0025] Etching the first side of the light-emitting epitaxial layer to form a light-emitting diode unit and an electrode unit;

[0026] On the first side, a first conductive type electrode is formed on the light emitting diode unit, and a second conductive type electrode is formed on the electrode unit;

[0027] removing the substrate;

[0028] forming a first opening in the light-emitting epitaxial layer, wherein the first opening exposes the first conductive type electrode of the electrode unit toward the second side of the light-emitting layer;

[0029] On the second side, forming a second conductive type electrode on the light emitting diode unit;

[0030] A conductive layer is formed on the second side. The conductive layer is in contact with and connected to the second conductive type electrode of the light emitting diode unit and is also in contact with and connected to the second conductive type electrode of the electrode unit exposed in the first opening.

[0031] According to one embodiment of the present application, forming a first conductive type electrode on a light emitting diode unit and forming a second conductive type electrode on an electrode unit includes:

[0032] forming a passivation layer on the upper surfaces of the light emitting diode unit and the electrode unit;

[0033] Etching the passivation layer portion on the top of the light-emitting diode unit and the electrode unit to form a second opening exposing the light-emitting diode unit and the electrode unit;

[0034] A first conductive type electrode is formed in the second opening of the light emitting diode unit, and a second conductive type electrode is formed in the second opening of the electrode unit simultaneously through the same photolithography process.

[0035] According to one embodiment of the present application, the second conductive type electrode of the electrode unit is located on the top of the electrode unit;

[0036] Forming a first opening in the light-emitting epitaxial layer includes:

[0037] The electrode unit is etched on the second side of the light-emitting epitaxial layer to form a first opening exposing the second conductive type electrode of the electrode unit.

[0038] According to one embodiment of the present application, the second conductive type electrode of the electrode unit extends from the top of the electrode unit along the side wall to the bottom, and extends to the connection area between the electrode unit and the adjacent light emitting diode unit;

[0039] Forming a first opening in the light-emitting epitaxial layer includes:

[0040] On the second side of the light-emitting epitaxial layer, the connection region is etched to form a first opening exposing the second conductive type electrode of the electrode unit.

[0041] According to one embodiment of the present application, before removing the substrate, the method further includes:

[0042] Filling a planarization layer on the first side of the light-emitting epitaxial layer, wherein the planarization layer covers the light-emitting diode unit and the electrode unit;

[0043] Etching a portion of the planarization layer above the first conductive type electrode of the light emitting diode unit and the second conductive type electrode of the electrode unit to form a third opening exposing the first conductive type electrode and the second conductive type electrode of the electrode unit;

[0044] forming a conductive connection member in the third opening;

[0045] Bond the conductive connector to the driver backplane.

[0046] According to an embodiment of the present application, the conductive connecting member is made of tin, gold, nickel, palladium, copper, or an alloy of at least two of the above materials.

[0047] According to one embodiment of the present application, after removing the substrate, the method further includes:

[0048] The second side of the light-emitting epitaxial layer is thinned.

[0049] According to one embodiment of the present application, a passivation layer is formed on the surface of the first side of the light emitting diode unit and the electrode unit, and the passivation layer is exposed on the second side of the thinned light emitting epitaxial layer.

[0050] According to the light-emitting array substrate, light-emitting array chip and manufacturing method of the present application, by forming an electrode unit and connecting the second conductive electrode on the first side of the electrode unit with the second conductive electrode on the second side of the light-emitting diode unit, the current inflow and outflow of the light-emitting array substrate are located on the same side, without the need for additional metal pipes, the structure is simple, and the luminous efficiency is not affected.

[0051] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0053] FIG1 is a schematic structural diagram of a light emitting array substrate in the related art;

[0054] FIG2 is a second structural schematic diagram of a light emitting array substrate in the related art;

[0055] FIG3 is a schematic diagram of a structure of a light-emitting array substrate provided in an embodiment of the present application;

[0056] FIG4 is a second structural schematic diagram of a light emitting array substrate provided in an embodiment of the present application;

[0057] FIG5 is a schematic diagram of a light emitting array chip according to an embodiment of the present application;

[0058] FIG6 is a second structural schematic diagram of a light emitting array chip provided in an embodiment of the present application;

[0059] FIG7 is a schematic diagram of a process of manufacturing a light-emitting array substrate according to an embodiment of the present application;

[0060] FIG8 is a schematic structural diagram of one stage of the manufacturing method provided in an embodiment of the present application;

[0061] FIG9 is a second structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0062] FIG10 is a third structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0063] FIG11 is a fourth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0064] FIG12 is a fifth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0065] FIG13 is a sixth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0066] FIG14 is a seventh structural diagram of a stage in a manufacturing method provided in an embodiment of the present application;

[0067] FIG15 is an eighth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0068] FIG16 is a ninth structural diagram of a stage in a manufacturing method provided in an embodiment of the present application;

[0069] FIG17 is a tenth structural diagram of a stage in a manufacturing method provided in an embodiment of the present application;

[0070] FIG18 is an eleventh structural diagram of a stage in a manufacturing method provided in an embodiment of the present application;

[0071] FIG19 is a twelfth structural diagram of a stage in a manufacturing method provided in an embodiment of the present application;

[0072] FIG20 is a thirteenth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application;

[0073] FIG21 is the fourteenth structural diagram of a stage in the manufacturing method provided in an embodiment of the present application.

[0074] Reference numerals:

[0075] Light-emitting layer 100, light-emitting diode unit 110, electrode unit 120, first conductive electrode 130, extension portion 141, second conductive electrode 140, first opening 150, passivation layer 160, filling structure 170, planarization layer 180, connection area 190, conductive layer 200, driving backplane 300, conductive connector 400, substrate 500, light-emitting epitaxial layer 600, first doped semiconductor 610, active layer 620, second doped semiconductor 630. DETAILED DESCRIPTION

[0076] Embodiments of the present application are described in detail below, with examples of the embodiments illustrated in the accompanying drawings. In the accompanying drawings, the sizes of layers, regions, and components, as well as their relative sizes, may be exaggerated for clarity. Throughout, the same or similar reference numerals represent the same or similar components or components having the same or similar functions. The embodiments described below with reference to the accompanying drawings are illustrative and intended only to explain the present application, and are not to be construed as limiting the present application.

[0077] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there can be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that while the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another. Thus, without departing from the teachings of the present disclosure, a first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. Furthermore, when a second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present disclosure.

[0078] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0079] 3 and 4 , an embodiment of the present application provides a light-emitting array substrate. In this embodiment, the light-emitting array substrate includes a light-emitting diode unit 110 and an electrode unit 120. A first conductive electrode 130 is provided on a first side of the light-emitting diode unit 110, and a second conductive electrode 140 is provided on a second side. The first conductive electrode 130 and the second conductive electrode 140 have independent potential connections. The first conductive electrode 130 is provided on a first side of the electrode unit 120, and the first side of the light-emitting diode unit 110 and the first side of the electrode unit 120 are on the same side. The second conductive electrode 130 of the electrode unit 120 is connected to the second conductive electrode 140 of the light-emitting diode unit 110, forming a second conductive path.

[0080] It should be noted that the shapes of the LED units 110 and the electrode units 120 shown in the drawings of this application are only distinguished for ease of description. In fact, the LED units 110 and the electrode units 120 in the light emitting array substrate can adopt the same shape.

[0081] It is understood that the first conductive electrode 130 of the LED unit 110 can be a P-type electrode, and the second conductive electrode 140 can be an N-type electrode; alternatively, the first conductive electrode 130 can be an N-type electrode, and the second conductive electrode 140 can be a P-type electrode. Since the light-emitting array substrate can be connected to the driver using a vertical injection method, for ease of connection, the P-type and N-type electrodes of the LED unit 110 on the light-emitting array substrate need to be connected to the driver backplane 300 on the same side.

[0082] The first conductive electrode 130 of the LED unit 110 is electrically connected to the driving circuit to more conveniently control the current flowing in. The second conductive electrode 140 of the LED unit 110 is also used to electrically connect to the driving circuit to more conveniently control the current flowing out.

[0083] In this embodiment, the second conductive electrode 140 of the electrode unit 120 is arranged on the first side of the light-emitting diode unit 110 and is used to be electrically connected to the second conductive electrode 140 on the second side, so that the second conductive electrode 140 on the second side of the light-emitting diode unit 110 is electrically connected to the side where the first electrode of the light-emitting diode unit 110 is located.

[0084] A driving current is provided to the first side of the light-emitting diode unit 110. The driving current flows into the light-emitting diode unit 110 from the first conductive electrode 130 of the light-emitting diode unit 110, then flows out from the second conductive electrode 140 of the light-emitting diode unit 110, then flows to the second conductive electrode 140 of the electrode unit 120, and finally returns to the first side of the light-emitting diode unit 110.

[0085] According to the light-emitting array substrate of the present application, by forming the electrode unit 120 and connecting the second conductive electrode 140 on the first side of the electrode unit 120 with the second conductive electrode 140 on the second side of the light-emitting diode unit 110, the current inflow and outflow of the light-emitting array substrate are located on the same side, without the need for additional metal pipes, the structure is simple, and the luminous efficiency is not affected.

[0086] In some embodiments, the second conductive type electrode 140 of the electrode unit 120 and the first conductive type electrode 130 of the light emitting diode unit 110 are manufactured using the same manufacturing process.

[0087] Since the second conductive type electrode 140 of the electrode unit 120 and the first conductive type electrode 130 of the light emitting diode unit 110 are located on the same side, they can be manufactured simultaneously, thereby simplifying the process.

[0088] In some embodiments, the first conductive type electrode 130 corresponding to the light-emitting diode unit 110 can be a P-type electrode, and the second conductive type electrode 140 can be an N-type electrode. Therefore, although the second conductive type electrode 140 corresponding to the electrode unit 120 is made of the same material as the first conductive type electrode 130 corresponding to the light-emitting diode unit 110 (a P-type material), the second conductive type electrode 130 corresponding to the electrode unit 120 is reused as an N-pole connection.

[0089] In other implementations, the second conductive electrode 130 corresponding to the light-emitting diode unit 110 can be an N-type electrode, and the second conductive electrode 140 can be a P-type electrode. Then, the second conductive electrode 130 corresponding to the electrode unit 120 made of N-type material is reused as a P-pole connection.

[0090] According to the light emitting array substrate of the present application, the electrode unit 120 and the first conductive type electrode 130 of the light emitting diode unit 110 are manufactured using the same process, which simplifies the process and reduces costs.

[0091] In some embodiments, the second conductive type electrode 140 of the electrode unit 120 and the first conductive type electrode 130 of the light-emitting diode unit 110 can be made of tin, gold, nickel, palladium, copper, or an alloy of at least two of the above materials. The alloys include gold, nickel alloy, or copper-nickel alloy. The second conductive type electrode 140 of the light-emitting diode unit 110 is made of Ti / Al or Ti / Au.

[0092] In some embodiments, the mesa of the electrode unit 120 and the mesa of the light-emitting diode unit 110 are at least partially formed by the same process.

[0093] In this embodiment, the mesas of the electrode unit 120 and the mesas of the light-emitting diode unit 110 can be formed by depositing the same material and then etching. The electrode unit 120 and the light-emitting diode unit 110 are manufactured using the same process. By using part of the semiconductor material used for light emission for the electrode unit 120, the manufacturing process can be reduced and simplified.

[0094] In some embodiments, the light-emitting array substrate further includes a conductive layer 200 disposed on the second side of the light-emitting diode unit 110 , and the conductive layer 200 is respectively connected to the second conductive electrode 140 of the light-emitting diode unit 110 and the second conductive electrode 140 of the electrode unit 120 to form a conductive channel.

[0095] In some embodiments, the conductive layer 200 may be made of an ITO (Indium tin oxide) semiconductor transparent conductive film. The transparent nature of the conductive layer 200 facilitates light to be emitted from the light emitting array substrate.

[0096] 3 , in some embodiments, the electrode unit 120 is provided with a first opening 150 passing through the table, the first opening 150 exposing the second conductive type electrode 140 of the electrode unit 120 toward the side where the conductive layer 200 is located, and the conductive layer 200 is connected to the second conductive type electrode 140 of the electrode unit 120 through the first opening 150 .

[0097] In this embodiment, the first opening 150 can be formed by etching the electrode unit 120. Before etching, the electrode unit 120 can have the same semiconductor stack structure as the light-emitting diode unit 110, that is, both include a stacked P-type semiconductor layer, an active layer, and an N-type semiconductor layer. The P-type semiconductor layer can be made of P-type gallium nitride, and the N-type semiconductor layer can be made of N-type gallium nitride. Of course, other types of materials can also be used, and this embodiment is not limited to this.

[0098] In some embodiments, when etching the electrode unit 120, the original semiconductor stacked structure can also be completely etched, that is, in the light-emitting array substrate shown in Figure 3, the P-type semiconductor layer, active layer and N-type semiconductor layer are not retained on both sides of the first opening 150 in the electrode unit 120.

[0099] In some embodiments, the first conductive electrode 130 of the light-emitting diode unit 110 can be a P-type electrode, and the second conductive electrode 140 of the light-emitting diode unit 110 can be an N-type electrode. The N-type electrode is connected to the side where the P-type electrode is located through the conductive layer 200. The light-emitting diode unit 110 is composed of a P-type semiconductor layer, an active layer, and an N-type semiconductor layer, from the side where the P-type electrode is located to the side where the N-type electrode is located.

[0100] In this embodiment, the second conductive type electrode 140 on the first side of the electrode unit 120 still uses a P-type electrode material. Since the second conductive type electrode 140 of the electrode unit 120 is connected to the N-type electrode of the light-emitting diode unit 110 via the conductive layer 200, using a P-type electrode material to achieve the N-type connection does not affect its conductivity. However, since the second conductive type electrode 140 on the first side of the electrode unit 120 and the first conductive type electrode 130 on the first side of the light-emitting diode unit 110 use the same polarity material, they can be manufactured using the same process, simplifying the manufacturing process.

[0101] In other embodiments, the first conductive electrode 130 of the light-emitting diode unit 110 may be an N-type electrode, and the second conductive electrode 140 of the light-emitting diode unit 110 may be a P-type electrode, which is connected to the side where the N-type electrode is located via the conductive layer 200. The light-emitting diode unit 110 includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer in order from the N-pole side to the P-pole side.

[0102] Similarly, in this embodiment, the second conductive type electrode 140 on the electrode unit 120 also uses N-pole material, so that it can be manufactured through the same process, simplifying the process without affecting the conductivity of the conductive channel.

[0103] It can be understood that, in the light emitting array substrate shown in FIG. 3 , the light emitting diode unit 110 and the electrode unit 120 are independent units, and the mesas of the two units are not connected to the semiconductor layer near the second side.

[0104] In some embodiments, the mesas of the LED unit 110 and the mesas of the electrode unit 120 are connected near the second side. For example, if the bottoms of the mesas of the LED unit 110 and the mesas of the electrode unit 120 near the second side are P-type semiconductor layers, the P-type semiconductor layers at all locations are connected. Alternatively, if the bottoms of the mesas of the LED unit 110 and the mesas of the electrode unit 120 near the second side are N-type semiconductor layers, the N-type semiconductor layers at all locations are connected.

[0105] In this embodiment, the surfaces of the LED unit 110 and the electrode unit 120 are further covered with a passivation layer 160. The material of the passivation layer 160 can be Al2O3 or SiO2. The passivation layer 160 covers the LED unit 110 and the electrode unit 120 to isolate and protect the LED unit 110 and the electrode unit 120.

[0106] In some embodiments, a filling structure 170 is formed in the first opening 150 , and the filling structure 170 covers the portion of the conductive layer 200 located in the first opening 150 .

[0107] It can be understood that the filling structure 170 can protect the conductive layer 200 and make the light emitting array substrate smoother, thereby facilitating subsequent processing.

[0108] In some embodiments, the filling structure 170 is made of metal material.

[0109] It is understood that the conductive fill structure 170 made of metal material can improve the conductivity of the electrode unit 120. In addition, the portion of the conductive layer 200 extending from the outside of the first opening 150 to the inside is bent, and the fill structure 170 can also prevent the conductive layer 200 from breaking at the bend.

[0110] In other embodiments, the fill structure 170 can also be made of materials such as SiO2, PI, photoresist, BCB, or retaining wall adhesive. These materials are commonly used to make flat structures. A planarization layer 180 is also provided between the LED unit 110 and the electrode unit 120. The planarization layer 180 can be made of materials such as SiO2, PI, photoresist, BCB, or retaining wall adhesive, and can provide support for the LED unit 110 and the electrode unit 120.

[0111] 4 , in some embodiments, the first opening 150 is formed in the connection region 190 between the electrode unit 120 and the adjacent light-emitting diode unit 110, the second conductive electrode 140 of the electrode unit 120 includes an extension portion 141 extending along the side wall of the electrode unit 120 to the connection region 190, and the first opening 150 exposes the extension portion 141 toward the side where the conductive layer 200 is located.

[0112] In this embodiment, the difference from the light emitting array substrate shown in FIG. 3 is that the first opening 150 is located outside the electrode unit 120 .

[0113] The electrode unit 120 and the light-emitting diode unit 110 have the same mesa, which includes a stacked P-type semiconductor layer, an active layer, and an N-type semiconductor layer. For details, refer to the previous embodiment. Similarly, the light-emitting array substrate proposed in this embodiment also has other structures that are the same as those of the light-emitting array substrate of the previous embodiment. The description of these structures can also refer to the previous embodiment.

[0114] It is understood that the second conductive type electrode 140 of the electrode unit 120 is connected to the conductive layer 200 passing through the first opening 150 . However, since the semiconductor stack structure is equivalent to a PN junction, the actual current flows through the second conductive type electrode 140 of the electrode unit 120 to the conductive layer 200 .

[0115] It is understood that the first conductive type electrode 130 of the light-emitting diode unit 110 can be directly deposited on the light-emitting diode unit 110, and the second conductive type electrode 140 of the electrode unit 120 can be directly deposited on the electrode unit 120. Thus, the second conductive type electrode 140 of the electrode unit 120 will extend along the sidewall of the electrode unit 120 to the connection region 190 between the electrode unit 120 and the light-emitting diode unit 110.

[0116] In some embodiments, the light emitting array substrate includes a plurality of light emitting diode units 110 , and the conductive layer 200 is in contact with the second conductive type electrode 140 corresponding to each light emitting diode unit 110 .

[0117] In this embodiment, the second conductive type electrode 140 of each light-emitting diode unit 110 is connected to the first side via a conductive path at the electrode unit 120. The second conductive type electrode 140 can be an N-pole, and the light-emitting array substrates are electrically connected using a common N-pole. Alternatively, the second conductive type electrode 140 can be a P-pole, and the light-emitting array substrates are electrically connected using a common P-pole.

[0118] In other embodiments, the plurality of LED units 110 may be divided into multiple groups, and the second conductive type electrodes 140 corresponding to the LED units 110 in each group are connected to the same conductive layer 200. The conductive layers 200 corresponding to each group are discontinuous.

[0119] In some embodiments, the light emitting array substrate includes a plurality of electrode units 120 , and the conductive layer 200 is in contact with the extension portion 141 corresponding to each electrode unit 120 .

[0120] In this embodiment, there are multiple electrode units 120, and their distribution locations can be located at the edge or the center of the light-emitting array substrate, which is not limited in this embodiment. The second conductive type electrode 140 of each electrode unit 120 is connected to the same conductive layer 200. By increasing the number of electrode units 120, the current of the second conductive type electrodes 140 of the light-emitting diode units 110 on the light-emitting array substrate is shared, reducing the voltage stress on the electrode units 120.

[0121] In other embodiments, the plurality of electrode units 120 may be divided into multiple groups, and the second conductive type electrodes 140 corresponding to the electrode units 120 of each group are connected to the same conductive layer 200. The conductive layers 200 corresponding to each group are discontinuous.

[0122] 5 and 6 , an embodiment of the present application further provides a light emitting array chip, which includes a driving backplane 300 and the aforementioned light emitting array substrate, wherein the light emitting array substrate is bonded to the driving backplane.

[0123] The light emitting array chip shown in Figure 5 is bonded to the light emitting array substrate and the driving backplane shown in Figure 3. The light emitting array chip shown in Figure 6 is bonded to the light emitting array substrate and the driving backplane shown in Figure 4.

[0124] In some embodiments, the driving backplane 300 may be a complementary metal oxide semiconductor (CMOS) backplane or a thin film transistor (TFT) backplane. The bonding connection may be hybrid bonding or eutectic bonding.

[0125] In some embodiments, the first conductive type electrode 130 of the light-emitting diode unit 110 and the second conductive type electrode 140 of the electrode unit 120 on the light-emitting array substrate are further connected to a conductive connector 400. The conductive connector 400 is used to achieve a bonding connection. The conductive connector 400 can be made of a metal material such as tin, gold, nickel, palladium, copper, or an alloy of at least two of the above materials, such as a gold-tin metal alloy.

[0126] It can be understood that the driving current on the driving substrate 300 flows into the light-emitting diode unit 110 from the first conductive electrode 130 of the light-emitting diode unit 110; then flows out from the second conductive electrode 140 of the light-emitting diode unit 110; then flows through the conductive layer 200 to the second conductive electrode 140 of the electrode unit 120, and finally flows back to the driving substrate 300.

[0127] 7 , an embodiment of the present application further provides a method for manufacturing a light emitting array substrate. In this embodiment, the method for manufacturing a light emitting array substrate includes:

[0128] Step 11: providing a substrate 500 and forming a light-emitting epitaxial layer 600 on the substrate. The light-emitting epitaxial layer 600 has a first side and a second side opposite to each other, and the second side is the side where the substrate 500 is located.

[0129] Step 12: Etching the first side of the light-emitting epitaxial layer 600 to form the light-emitting diode unit 110 and the electrode unit 120;

[0130] Step 13: On the first side, a first conductive type electrode 130 is formed on the light emitting diode unit 110 , and a second conductive type electrode 140 is formed on each of the electrode units 120 ;

[0131] Step 14: removing the substrate 500;

[0132] Step 15: forming a first opening 150 in the light-emitting epitaxial layer 600 , wherein the first opening 150 exposes the second conductive type electrode 140 of the electrode unit 120 toward the second side of the light-emitting epitaxial layer 600 ;

[0133] Step 16: On the second side, forming a second conductive type electrode 140 on the light emitting diode 110 unit;

[0134] Step 17: forming a conductive layer 200 on the second side. The conductive layer 200 is in contact with and connected to the second conductive type electrode 140 of the light emitting diode unit 110 and the second conductive type electrode 140 of the electrode unit 120 exposed in the first opening 150 .

[0135] 8 , the substrate 500 may be made of semiconductor materials such as silicon, gallium arsenide, etc., or non-conductive materials such as sapphire or glass. The light-emitting epitaxial layer 600 includes a first doped semiconductor 610 , a second doped semiconductor 630 , and an active layer 620 .

[0136] In some embodiments, the first doped semiconductor 610 is a P-type semiconductor, and the second doped semiconductor 630 is an N-type semiconductor. Alternatively, the first doped semiconductor 610 is an N-type semiconductor, and the second doped semiconductor 630 is a P-type semiconductor. The P-type semiconductor may be P-type gallium nitride, and the N-type semiconductor may be N-type gallium nitride.

[0137] 9 , portions of the first doped semiconductor 610, active layer 620, and second doped semiconductor 630 are removed by etching to expose the second doped semiconductor 630, thereby forming a functionalized stepped structure serving as the light-emitting diode unit 110 and the electrode unit 120. The etching depth is based on the predetermined thickness that the second doped semiconductor 630 can reach, and the remaining second doped semiconductor 630 is continuous in the horizontal direction.

[0138] In some embodiments, the second doped semiconductor 630 may be etched through to form a light emitting diode unit 110 and an electrode unit 120 that are independent of each other.

[0139] It should be noted that after etching the light-emitting epitaxial layer 600 in step 12, multiple stepped structures are formed, and each stepped structure can have the same shape. Part of the stepped structure serves as the light-emitting diode unit 110, and another part of the stepped structure serves as the electrode unit 120. In fact, the electrode unit 120 is created by reusing a portion of the stepped structure that has light-emitting capabilities. The specific positions of the light-emitting diode unit 110 and the electrode unit 120 can be selected according to needs.

[0140] The first conductive electrode 130 of the LED unit 110 and the second conductive electrode 140 on the electrode unit 120 can be formed by metal evaporation, metal sputtering, electron beam evaporation, lift-off (metal lift-off technology), or other methods. The material type of the first conductive electrode 130 of the LED unit 110 and the second conductive electrode 140 on the electrode unit 120 is the same as the conductivity type of the first doped semiconductor 610. If the first doped semiconductor 610 is P-type, the first conductive electrode 130 of the LED unit 110 and the second conductive electrode 140 on the electrode unit 120 are P-type. If the first doped semiconductor 610 is N-type, the first conductive electrode 130 of the LED unit 110 and the second conductive electrode 140 on the electrode unit 120 are N-type. The first conductive electrode 130 of the LED unit 110 and the second conductive electrode 140 on the electrode unit 120 can be made of tin, gold, nickel, palladium, copper, or an alloy of at least two of the above materials. Among them, alloys such as gold, nickel alloy or copper-nickel alloy.

[0141] In this embodiment, step 13 may include: forming a passivation layer 160 on the upper surface of the light-emitting diode unit 110 and the electrode unit 120; etching the passivation layer 160 portion on the top of the light-emitting diode unit 110 and the electrode unit 120 to form a second opening exposing the light-emitting diode unit 110 and the electrode unit 120; and simultaneously forming a first conductive electrode 130 in the second opening of the light-emitting diode unit 110 and a second conductive electrode 140 in the second opening of the electrode unit 120 through the same photolithography process.

[0142] 10 , after etching is completed, a passivation layer 160 may be formed by atomic layer deposition (ALD). Passivation layer 160 may be made of Al2O3, SiO2, or other suitable materials. Passivation layer 160 may provide insulation and protection on the upper surfaces of light-emitting diode unit 110 and electrode unit 120.

[0143] 11 , a patterned mask is applied to the upper surface passivation layer 160 of the light-emitting diode unit 110 and the electrode unit 120, and a portion of the passivation layer 160 is removed to expose the first doped semiconductor 610. A first conductive electrode 130 is then formed on the first doped semiconductor 610 exposed on the light-emitting diode unit 110, and a second conductive electrode 140 is formed on the first doped semiconductor 610 exposed on the electrode unit 120.

[0144] The second conductive type electrode 140 formed on the electrode unit 120 is still made of the same conductive type material as the first doped semiconductor 610 and is completed using the same photolithography process to simplify the process. Because the second conductive type electrode 140 is connected to the second conductive type electrode 140 of the light-emitting diode unit 110 through the conductive layer 200, the use of materials with different polarities to achieve the electrode connection does not affect their conductivity.

[0145] It should be noted that the structure diagram shown in Figure 11 is a schematic diagram of a stage in the manufacturing process of the light emitting array substrate shown in Figure 3. In this example, the second conductive type electrode 140 of the electrode unit 120 is located on the top of the electrode unit 120.

[0146] It is understood that removing the substrate 500 can facilitate processing on the other side of the light-emitting diode unit 110 and the electrode unit 120. The substrate 100 can be stripped by methods including but not limited to laser stripping, dry etching, wet etching, mechanical polishing, etc.

[0147] In some embodiments, before step 14, the following steps may also be included: filling a planarization layer 180 on the first side of the light-emitting epitaxial layer 600, wherein the planarization layer 180 covers the light-emitting diode unit 110 and the electrode unit 120; etching a portion of the planarization layer 180 above the first conductive electrode 130 of the light-emitting diode unit 110 and the second conductive electrode 140 of the electrode unit 120 to form a third opening exposing the first conductive electrode 130 and the second conductive electrode 140 of the electrode unit 120; forming a conductive connector 190 in the third opening; and bonding the conductive connector 190 to the driving backplane 300.

[0148] 12 , a planarization material is filled to form a planarization layer 180 to flatten the top of the light emitting diode unit 110 and the electrode unit 120. The material of the planarization layer 180 can be SiO2, PI, photoresist, BCB, barrier glue, etc. or other suitable materials.

[0149] In some embodiments, when the planarization layer 180 is made of SiO 2 , it can be prepared using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process. When the planarization layer 180 is made of photoresist, it can be prepared using a coating process.

[0150] 13 , by designing a graphic mask for the planarization layer 180, the portion of the planarization layer 180 above the first conductive electrode 130 of the light-emitting diode unit 110 and the second conductive electrode 140 of the electrode unit 120 is removed to expose the first conductive electrode 130 and the second conductive electrode 140 of the electrode unit 120; and then a conductive connector 400 is formed by a process such as Lift-Off, which can be used to achieve bonding with the driving backplane 300.

[0151] In some embodiments, the conductive connecting member is made of tin, gold, nickel, palladium, copper, or an alloy of at least two of the above materials, such as a gold-tin metal alloy.

[0152] Referring to FIG14 , the structure in FIG13 is bonded to a driver backplane 300 . The driver backplane 300 can be a complementary metal oxide semiconductor (CMOS) backplane or a thin film transistor (TFT) backplane. The bonding can be done using hybrid bonding or eutectic bonding.

[0153] 15 , after the substrate 500 is stripped, the second doped semiconductor 630 may be thinned. The thinning operation may include dry etching, wet etching, or mechanical polishing. The second doped semiconductor 630 is thinned to a thickness that exposes the passivation layer 160 .

[0154] In some embodiments, when thinning the second doped semiconductor 630, a certain thickness of continuous second doped semiconductor 630 may be retained, that is, a certain thickness of second doped semiconductor 630 may be retained above the passivation layer 160, and the passivation layer 160 may not be exposed. Alternatively, when thinning the second doped semiconductor 630, the passivation layer 160 may be exposed on the second side of the thinned light-emitting epitaxial layer 600.

[0155] 16 , in this embodiment, the step of forming the first opening 150 in the light emitting epitaxial layer 600 includes etching the electrode unit 120 on the second side of the light emitting epitaxial layer 600 to form the first opening 150 exposing the second conductive type electrode 140 of the electrode unit 120 .

[0156] In this embodiment, the electrode unit 120 is etched to sequentially remove portions of the second doped semiconductor 630 , the active layer 620 , and the first doped semiconductor 610 to form a first opening 150 . The first opening 150 exposes the second conductive electrode 140 of the electrode unit 120 .

[0157] In some embodiments, the second doped semiconductor 630 , the active layer 620 , and the first doped semiconductor 610 within the electrode unit 120 may be completely removed.

[0158] In some embodiments, after forming the first opening in the light emitting epitaxial layer 600 , the method may further include forming a second conductive type electrode 140 on the light emitting diode unit 110 on the second side.

[0159] The second conductive electrode 140 forms an ohmic contact with the second electrode of the light emitting diode unit 110 and is used to achieve electrical connection with the driving circuit to more conveniently control the outflowing current.

[0160] 17 , the second conductive electrode 140 can be fabricated using a lift-off process. The second conductive electrode 140 can include a plurality of protrusions formed on the side of the LED unit 110 facing away from the first conductive electrode 130, forming an ohmic contact. The material of the second conductive electrode 140 can be Ti / Al or Ti / Au.

[0161] 18 , due to the presence of the first opening 150 , the conductive layer 200 sinks to the bottom of the first opening 150 during formation, and contacts the second conductive type electrode 140 of the electrode unit 120 exposed in the opening 151 , forming a conductive channel penetrating the light-emitting epitaxial layer 600 .

[0162] It can be understood that the driving current on the driving substrate 300 flows into the light-emitting diode unit 110 from the first conductive electrode 130 of the light-emitting diode unit 110; then flows out from the second conductive electrode 140 of the light-emitting diode unit 110; then flows through the conductive layer 200 to the second conductive electrode 140 of the electrode unit 120, and finally returns to the driving substrate 300.

[0163] The conductive layer 200 is formed on the second side of the electrode unit 120 and the second side of the light emitting diode unit 110. The conductive layer 200 may be made of an ITO (Indium tin oxide) semiconductor transparent conductive film.

[0164] In some embodiments, after the conductive layer 200 is formed, the cavity portion within the opening 151 is partially filled with a planarization material to achieve planarization. The planarization material is the same as the material of the planarization layer 180 .

[0165] In other embodiments, the cavity portion within the opening 151 may be filled with metal material to improve the electrical conductivity of the electrode unit 120 and prevent breakage at the bend of the side wall.

[0166] 19 to 21 , another embodiment of the present application provides schematic diagrams of some stages of the manufacturing process of the light emitting array substrate shown in FIG. 4 .

[0167] As shown in Figure 19, in this embodiment, the second conductive electrode 140 of the electrode unit 120 extends from the top of the electrode unit 120 along the side wall to the bottom, and extends to the connection area 190 between the electrode unit 120 and the adjacent light-emitting diode unit 110, and the first conductive electrode 130 has an extension portion 141 in the connection area 190.

[0168] One difference from the manufacturing method proposed in the previous embodiment is that the second conductive type electrode 140 of the electrode unit 120 in this embodiment also extends to the connection area 190 between the electrode unit 120 and the light emitting diode unit 110. The manufacturing process before the structure shown in FIG19 can be referred to FIG8-FIG10.

[0169] In this embodiment, the second conductive type electrode 140 of the electrode unit 120 can be formed by metal evaporation, metal sputtering, electron beam evaporation, lift-off (metal lift-off technology), etc. During patterning, the pattern is designed to retain the portion of the second conductive type electrode 140 of the electrode unit 120 between the electrode unit 120 and the light-emitting diode unit 110, forming an extension portion 141. The extension portion 141 includes a first portion extending from the first side to the second side along the sidewall of the electrode unit 120 and a second portion extending from the second side toward the light-emitting diode unit 110.

[0170] In this embodiment, the second-conductivity-type electrode 140 formed on the electrode unit 120 is made of the same conductivity type as the first-doped semiconductor 610 and is fabricated using the same photolithography process to simplify the process. Since the first-conductivity-type electrode 130 is connected to the N-pole of the light-emitting diode unit 110 via the conductive layer 200, the use of materials with different polarities to achieve the electrode connection does not affect their conductivity. The semiconductor stack within the electrode unit 120 is equivalent to a PN junction, and the actual current flows through the first-conductivity-type electrode 130 to the conductive layer 200.

[0171] 20 , in this embodiment, the step of forming the first opening 150 in the light emitting epitaxial layer 600 includes etching the connection region 190 on the second side of the light emitting epitaxial layer 600 to form the first opening 150 exposing the second conductive type electrode 140 of the electrode unit 120 .

[0172] In this embodiment, the first opening 150 is formed in the connection region 190 between the light-emitting diode unit 110 and the electrode unit 120. When the second doped semiconductor 630 is thinned, the second doped semiconductor 630 is thinned to expose the passivation layer 160. Therefore, when forming the first opening 150, only a portion of the passivation layer 160 needs to be removed. If a certain thickness of the second doped semiconductor 630 remains above the passivation layer 160 during the thinning process, then when forming the first opening 150, only a portion of the second doped semiconductor 630 and the passivation layer 160 need to be removed in sequence.

[0173] 21 , due to the presence of the first opening 150 , the conductive layer 200 sinks to the bottom of the first opening 150 during formation, thereby contacting the extension 141 exposed in the first opening 150 , forming a conductive channel penetrating the light-emitting epitaxial layer 600 .

[0174] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A light emitting array substrate, wherein: It comprises a light emitting diode unit and an electrode unit, wherein a first conductive type electrode is provided on a first side of the light emitting diode unit, and a second conductive type electrode is provided on a second side, the first conductive type electrode and the second conductive type electrode have an independent potential connection relationship, the second conductive type electrode is provided on a first side of the electrode unit, and the first side of the light emitting diode unit and the first side of the electrode unit are on the same side; The second conductive type electrode of the electrode unit is connected to the second conductive type electrode on the second side of the light emitting diode unit to form a second conductive type conducting channel.

2. The light emitting array substrate according to claim 1, wherein: The second conductive type electrode of the electrode unit and the first conductive type electrode of the light emitting diode unit are manufactured by the same manufacturing process.

3. The light emitting array substrate according to claim 2, wherein: The second conductive electrode of the electrode unit and the first conductive electrode of the light emitting diode unit are made of tin, gold, nickel, palladium, copper or an alloy of at least two of the above materials, and the second conductive electrode of the light emitting diode unit is made of Ti / Al or Ti / Au.

4. The light emitting array substrate according to any one of claims 1 to 3, wherein: The mesa of the electrode unit and the mesa of the light emitting diode unit are at least partially formed by the same process.

5. The light emitting array substrate according to claim 4, wherein: The light emitting array substrate further comprises a conductive layer disposed on the second side of the light emitting diode unit, wherein the conductive layer is respectively connected to the second conductive type electrode of the light emitting diode unit and the second conductive type electrode of the electrode unit to form the conductive path.

6. The light emitting array substrate according to claim 5, wherein: The electrode unit is provided with an opening passing through the table surface, the opening exposes the second conductive type electrode of the electrode unit toward the side where the conductive layer is located, and the conductive layer is connected to the second conductive type electrode of the electrode unit through the opening.

7. The light emitting array substrate according to claim 6, wherein: A filling structure is formed in the opening, and the filling structure covers the portion of the conductive layer located in the opening.

8. The light emitting array substrate according to claim 7, wherein: The filling structure is made of metal material.

9. The light emitting array substrate according to any one of claims 5 to 7, wherein: An opening is provided in the connection area between the light emitting diode unit and the electrode unit, and the second conductive type electrode of the electrode unit extends along the outer side wall of the mesa structure to the connection area and is exposed through the opening.

10. The light emitting array substrate according to any one of claims 1 to 9, wherein: The mesa of the light emitting diode unit is connected to a portion of the mesa of the electrode unit close to the second side.

11. The light emitting array substrate according to any one of claims 1 to 10, wherein: The light emitting array substrate includes a plurality of the light emitting diode units, and the conductive layer is in contact with the second conductive type electrode corresponding to each of the light emitting diode units.

12. The light emitting array substrate according to claim 11, wherein: The light emitting array substrate includes a plurality of the electrode units, and the conductive layer is in contact with the first conductive type electrode corresponding to each of the electrode units.

13. A light emitting array chip, wherein: It comprises a driving backplane and a light emitting array substrate according to any one of claims 1 to 12, wherein the light emitting array substrate is bonded to the driving backplane.

14. A method for manufacturing a light emitting array substrate, wherein: include: Providing a substrate, and forming a light-emitting epitaxial layer on the substrate, wherein the light-emitting epitaxial layer has a first side and a second side opposite to each other, wherein the second side is a side where the substrate is located; Etching the first side of the light-emitting epitaxial layer to form a light-emitting diode unit and an electrode unit; On the first side, a first conductive type electrode is formed on the light emitting diode unit, and a second conductive type electrode is formed on the electrode unit; removing the substrate; forming a first opening in the light-emitting epitaxial layer, wherein the first opening exposes the second conductive type electrode of the electrode unit toward the second side of the light-emitting epitaxial layer; On the second side, forming a second conductive type electrode on the light emitting diode unit; A conductive layer is formed on the second side, wherein the conductive layer is connected to the second conductive type electrode contact of the light emitting diode unit and is connected to the second conductive type electrode contact of the electrode unit exposed in the first opening.

15. The manufacturing method according to claim 14, wherein: The step of forming a first conductive type electrode on the light emitting diode unit and forming a second conductive type electrode on the electrode unit comprises: forming a passivation layer on the upper surfaces of the light emitting diode unit and the electrode unit; Etching the passivation layer portion on the top of the light-emitting diode unit and the electrode unit to form a second opening exposing the light-emitting diode unit and the electrode unit; A first conductive type electrode is formed in the second opening of the light emitting diode unit, and a second conductive type electrode is formed in the second opening of the electrode unit at the same time by the same photolithography process.

16. The manufacturing method according to claim 15, wherein: The second conductive type electrode of the electrode unit is located on the top of the electrode unit; The forming of a first opening in the light emitting epitaxial layer comprises: The electrode unit is etched on the second side of the light-emitting epitaxial layer to form a first opening exposing the second conductive type electrode of the electrode unit.

17. The manufacturing method according to claim 15, wherein: The second conductive type electrode of the electrode unit extends from the top of the electrode unit along the side wall to the bottom, and extends to the connection area between the electrode unit and the adjacent light emitting diode unit; The forming of a first opening in the light emitting epitaxial layer comprises: The connection region is etched on the second side of the light-emitting epitaxial layer to form a first opening exposing the second conductive type electrode of the electrode unit.

18. The manufacturing method according to any one of claims 14 to 17, wherein: Before removing the substrate, the method further comprises: Filling a planarization layer on the first side of the light emitting epitaxial layer, wherein the planarization layer covers the light emitting diode unit and the electrode unit; Etching a portion of the planarization layer above the first conductive type electrode of the light emitting diode unit and the second conductive type electrode of the electrode unit to form a third opening exposing the first conductive type electrode and the second conductive type electrode of the electrode unit; forming a conductive connection member in the third opening; The conductive connector is bonded to the driving backplane.

19. The manufacturing method according to claim 18, wherein: The conductive connecting member is made of tin, gold, nickel, palladium, copper or an alloy of at least two of the above materials.

20. The manufacturing method according to claim 18, wherein: After removing the substrate, the method further comprises: The second side of the light-emitting epitaxial layer is thinned.

21. The manufacturing method according to claim 20, wherein: The light emitting diode unit and the electrode unit form a passivation layer on the surface of the first side, and the passivation layer is exposed on the second side of the thinned light emitting epitaxial layer.

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