OPTO-electronic component with an electrical via connecting to an electrical conductor layer through two dielectrc layers

Abstract

The invention pertains to a component (100), comprising: a. a dielectric layer A (103), b. a dielectric layer B (104), and c. an optical element layer (105); wherein the layer sequence further comprises a first electrical conductor layer (108); wherein at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap one another; wherein a first electrical connection (113) extends through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and electrically connects to the first electrical conductor layer (108); wherein the dielectric layer A (103) is less resistant to a first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less resistant to a further etching method than the dielectric layer A (103). The invention further pertains to a method (700), to an electronic device (1500) and to uses of the component (100).

Description

[0001] OPTO-ELECTRONIC COMPONENT WITH AN ELECTRICAL VIA CONNECTING TO AN

[0002] ELECTRICAL CONDUCTOR LAYER THROUGH TWO DIELECTRC LAYERS

[0003] FIELD OF THE INVENTION

[0004] The invention pertains to a component, comprising a layer sequence, including at least the following layers superimposed on one another in the given order from a first side of the component to a further side of the component, which is opposite to the first side: a. a dielectric layer A, b. a dielectric layer B, and c. an optical element layer; wherein the layer sequence further comprises a first electrical conductor layer; wherein, in a view in a first direction, which runs from the first side to the further side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap one another; wherein a first layer surface of the dielectric layer A faces away from the dielectric layer B; wherein a first electrical connection extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer; wherein the dielectric layer A is less resistant to a first etching method than the dielectric layer B, and the dielectric layer B is less resistant to a further etching method than the dielectric layer A. The invention further pertains to a method, to an electronic device and to uses of the component.

[0005] BACKGROUND

[0006] Opto-electronic devices such as modulators and photodetectors are important electronic components for optical communication systems, e.g., data transmission via fibre optics. Some of the important parameters for these devices are bandwidth, operation speed, extinction ratio, insertion loss, energy consumption, responsivity and footprint. One option is silicon-based modulators. However, silicon-based modulators have a number of disadvantages. For example, silicon-based modulators have a narrow bandwidth. Furthermore, in order to integrate a silicon-based modulator with other electronic components, such as CMOS integrated circuits, silicon-based modulators have to be produced as part of a front-end-of-line process. In addition, silicon-based modulators cannot easily be integrated with newer technologies that are being developed in the electronic industry. This is in contrast to graphene-based modulators, which have a number of advantages. For example, graphene -based modulators have a broader bandwidth compared to silicon-based modulators. Furthermore, graphene-based modulators can be integrated with other electronic components as part of a back-end-of-line process, without requiring significant development to enable the integration. Graphene -based modulators can also be more easily integrated with newer technologies in the electronic industry. Graphene-based modulators further allow for a better use of surface area, and thus a more compact electronic device or system.

[0007] Producing graphene -based opto-electronic devices remains challenging, in particular, because a graphene sheet with a thickness of a single atomic layer is very delicate. In the prior art, a photolithographic method which involves a sacrificial photosensitive resist layer is used to form holes for vias and a metal lift-off is needed to produce the vias to electrically connect to graphene sheets. This method involves many steps, including the application of the photoresist layer which is irradiated, developed and has to be removed completely using the metal lift-off at the end of the method. If a via to contact a sheet of graphene is to be prepared, the graphene sheet is exposed once the hole for the via has been formed. This means that delicate single atomic layer material is exposed to all the subsequent steps of chemically and mechanically cleaning the hole from etchant and also of cleaning the device precursor from remainders of the photoresist. Mechanical damage which the graphene experiences in these steps and also chemical residues of these steps on the graphene will have a negative effect on the performance of the opto-electronic device. In result, in the production of graphene-based opto-electronic devices the reject rate is unfavourably high.

[0008] OBJECTS

[0009] An object of the present invention is to at least partially overcome at least one of the disadvantages encountered in the state of the art.

[0010] It is a further object of the invention to provide an electronic device, such as a computing device or a memory, with an opto-electronic component, where the design of the opto-electronic component allows to produce the electronic device at a reduced reject rate. Further, it is an object of the invention to provide an opto-electronic component, such as a detector, a modulator, a filter, an interferometer, and a bolometer, which can be produced at a reduced reject rate.

[0011] It is a further object of the invention to provide an opto-electronic component, such as a detector, a modulator, a filter, an interferometer, and a bolometer, which can be produced with a reduced width of the distribution of performance of all the opto-electronic components of this type produced on the same wafer. Further, it is an object of the invention to provide a photodetector which can be produced with a reduced width of the distribution of the responsivity of all photodetectors of this type produced on the same wafer. Further, it is an object of the invention to provide an opto-electronic modulator which can be produced with a reduced width of the distribution of the modulation speed of all modulators of this type produced on the same wafer. Further, it is an object of the invention to provide an opto-electronic component which can encode and / or decode an increased data stream.

[0012] Further, it is an object of the invention to provide an opto-electronic component which can be produced with less process steps, using less sacrificial layers and / or from less source material.

[0013] It is a further object of the invention to provide an opto-electronic component with improved confinement of light in a waveguide and / or with reduced crosstalk.

[0014] It is a further object of the invention to provide one of the above advantageous opto-electronic components, where the component includes no additional layer, does not suffer from a reduction of integrity, has an as broad as possible bandwidth, it can be integrated with other electronic components as part of a back-end-of-line process without requiring significant development to enable the integration, it can easily integrated with state-of-the-art technology in the electronic industry, and / or it is as compact as possible.

[0015] Preferably, the above opto-electronic devices are graphene-based.

[0016] DETAILED DESCRIPTION OF THE INVENTION

[0017] A contribution to at least partly fulfilling at least one, preferably more than one, of the above-mentioned objects is made by any of the embodiments of the invention.

[0018] A 1stembodiment of the invention is a component, comprising a layer sequence, including at least the following layers superimposed on one another in the given order from a first side of the component to a further side of the component, which is opposite to the first side: a. a dielectric layer A, b. a dielectric layer B, and c. an optical element layer; wherein the layer sequence further comprises a first electrical conductor layer; wherein, in a view in a first direction, which runs from the first side to the further side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap one another; wherein a first layer surface of the dielectric layer A faces away from the dielectric layer B; wherein a first electrical connection extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer; wherein the dielectric layer A is less resistant to a first etching method than the dielectric layer B, and the dielectric layer B is less resistant to a further etching method than the dielectric layer A.

[0019] The first etching method is different from the further etching method. A first layer or material is more / less resistant to a certain etching method than a second layer or material if the etch rate of this etching method is less / more for the first layer or material than for the second layer or material. In a preferred aspect of the 1stembodiment, the component is adapted and arranged for the first side of the component and / or the further side of the component to face a front-end-of-line layer. In this aspect it is more preferred that the further side of the component is adapted and arranged to face the front-end-of-line layer. In a preferred aspect of the 1stembodiment, the component is adapted and arranged such that either the first side of the component or the further side of the component faces a front-end-of-line layer. In this aspect it is more preferred that the further side of the component faces the front-end- of-line layer. In a preferred aspect of the 1stembodiment, the first electrical connection does not extend to the further side of the component.

[0020] In a preferred embodiment of the component, at last one, preferably each, of the following applies: a| a selectivity of the first etching method for the dielectric layer A over the dielectric layer B is more than 1, preferably at least 5, more preferably at least 10, more preferably at least 20, more preferably at least 30, more preferably at least 40, more preferably at least 50, more preferably at least 60, more preferably at least 70, more preferably at least 80, even more preferably at least 90, most preferably at least 100; b| a selectivity of the first etching method for the dielectric layer B over the dielectric layer A is less than 1, preferably not more than 1 / 5, more preferably not more than 1 / 10, more preferably not more than 1 / 20, more preferably not more than 1 / 30, more preferably not more than 1 / 40, more preferably not more than 1 / 50, more preferably not more than 1 / 60, more preferably not more than 1 / 70, more preferably not more than 1 / 80, even more preferably not more than 1 / 90, most preferably not more than 1 / 100; c| a selectivity of the further etching method for the dielectric layer A over the dielectric layer B is less than 1, preferably not more than 1 / 5, more preferably not more than 1 / 10, more preferably not more than 1 / 20, more preferably not more than 1 / 30, more preferably not more than 1 / 40, more preferably not more than 1 / 50, more preferably not more than 1 / 60, more preferably not more than 1 / 70, more preferably not more than 1 / 80, even more preferably not more than 1 / 90, most preferably not more than 1 / 100; d| a selectivity of the further etching method for the dielectric layer B over the dielectric layer A is more than 1, preferably at least 5, more preferably at least 10, more preferably at least 20, more preferably at least 30, more preferably at least 40, more preferably at least 50, more preferably at least 60, more preferably at least 70, more preferably at least 80, even more preferably at least 90, most preferably at least 100.

[0021] This preferred embodiment is a 2ndembodiment of the invention, that preferably depends on the 1stembodiment of the invention. Particularly preferred combinations of the above items are a| c|, a| d|, b| c|, b| d|, a| c| and a| b| c| d|.

[0022] In a preferred embodiment of the component, the first electrical conductor layer has a layer thickness of less than 1 pm, preferably less than 900 nm, more preferably less than 800 nm, more preferably less than 700 nm, more preferably less than 600 nm, more preferably less than 500 nm, more preferably less than 400 nm, more preferably less than 300 nm, more preferably less than 200 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, more preferably less than 20 nm, more preferably less than 10 nm, more preferably less than 9 nm, more preferably less than 8 nm, more preferably less than 7 nm, more preferably less than 6 nm, more preferably less than 5 nm, more preferably less than 4 nm, more preferably less than 3 nm, more preferably less than 2 nm even more preferably less than 1 nm. This preferred embodiment is a 3rdembodiment of the invention, that preferably depends on the 1stor 2ndembodiment of the invention.

[0023] Preferably, the lower limit of the thickness of the first electrical conductor layer is the thickness of an atomic monolayer or molecular monolayer of the material of the first electrical conductor layer.

[0024] In a preferred embodiment of the component, the first electrical conductor layer consists of a number of layers of atoms or molecules; wherein the number of layers of atoms or molecules is at least 1 , preferably in the range from 1 to 10, preferably from 1 to 9, more preferably from 1 to 8, more preferably from 1 to 7, more preferably from 1 to 6, more preferably from 1 to 5, more preferably from 1 to 4, more preferably from 1 to 3, even more preferably the number of layers of atoms or molecules is 1 or 2, most preferably 1. This preferred embodiment is a 4thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0025] The layers of atoms or molecules follow one another in the first direction. Preferred layers of atoms are layers of carbon atoms.

[0026] In a preferred embodiment of the component, the first electrical conductor layer superimposes the optical element layer on a side of the optical element layer which faces the first side of the component, or on a side of the optical element layer which faces the further side of the component, or both. This preferred embodiment is a 5thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0027] In a preferred embodiment of the component, the first electrical conductor layer is arranged between the dielectric layer A and the optical element layer. This preferred embodiment is a 6thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention. In a preferred embodiment of the component, the dielectric layer A comprises, preferably consists of, an inorganic material A, or the dielectric layer B comprises, preferably consists of, an inorganic material B, or both. This preferred embodiment is a 7thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0028] The inorganic material A is different from the inorganic material B. Preferably, the dielectric layer A comprises the inorganic material A in a proportion of at least 50 wt-%, more preferably at least 60 wt-%, more preferably at least 70 wt-%, more preferably at least 80 wt-%, even more preferably at least 90 wt-%, in each case based on the weight of the dielectric layer A. Additionally or alternatively preferred, the dielectric layer B comprises the inorganic material B in a proportion of at least 50 wt-%, more preferably at least 60 wt-%, more preferably at least 70 wt-%, more preferably at least 80 wt-%, even more preferably at least 90 wt-%, in each case based on the weight of the dielectric layer B.

[0029] In a preferred embodiment of the component, the dielectric layer A, or the dielectric layer B, or each of both is not a photoresist. This preferred embodiment is an 8thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0030] In a preferred embodiment of the component, the dielectric layer A is also less resistant to the first etching method than a photo resist. This preferred embodiment is a 9thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0031] In a preferred embodiment of the component, the photoresist is a positive photoresist or a negative photoresist. This preferred embodiment is a 10thembodiment of the invention, that preferably depends on the 9thembodiment of the invention.

[0032] In a preferred embodiment of the component, the photoresist is one selected from the group consisting of a photopolymeric photoresist, a photodecomposing photoresist, a photocrosslinking photoresist, and a self-assembled monolayer photoresist, or a combination of at least two thereof. This preferred embodiment is an 11thembodiment of the invention, that preferably depends on the 9thor 10thembodiment of the invention.

[0033] In a preferred embodiment of the component, the photoresist is one selected from the group consisting of a methyl methacrylate, a poly(phthalaldehyde), a photo acid generator (PAG), an azide quinone, novolac resin, epoxy -based resist, an off-stoichiometry thiol-enes(OSTE) polymer, a hydrogen silsesquioxane (HSQ), and benzocyclobutene (BCB), or a combination of at least two thereof. This preferred embodiment is a 12thembodiment of the invention, that preferably depends on any of the 9thto 111,1embodiments of the invention. A preferred azide quinone is diazonaphthaquinone (DNQ). A preferred epoxy -based resist is SU-8 photoresist.

[0034] In a preferred embodiment of the component, the first etching method, or the further etching method, or each of both is a dry etching method, or a wet etching method, or a combination of both. This preferred embodiment is a 13thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0035] A preferred dry etching method is one selected from the group consisting of atomic layer etching, plasma etching, and reactive ion etching, or a combination of at least two thereof. A preferred wet etching method is atomic layer etching or makes use of at least one selected from the group consisting of hydrofluoric acid, buffered hydrofluoric acid, buffered oxide etch, ammonium fluoride, phosphoric acid, hydrochloric acid, and hydrogen peroxide, or of a combination of at least two thereof, in each case as etchant.

[0036] A particularly preferred further etching method is atomic layer etching. Here, atomic layer etching may be performed dry or wet.

[0037] In a preferred embodiment of the component, the first etching method uses a first etchant and the further etching method uses a further etchant, wherein the first etchant is different from the further etchant. This preferred embodiment is a 14thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0038] In a preferred embodiment of the component, the first etchant is one selected from the group consisting of a fluoride, Ar, N, He, H, and a bromide, or a combination of at least two thereof. This preferred embodiment is a 15thembodiment of the invention, that preferably depends on the 14thembodiment of the invention.

[0039] In a preferred embodiment of the component, the further etchant is one selected from the group consisting of a fluoride, a chloride, Ar, N, He, and H, or a combination of at least two thereof. This preferred embodiment is a 16thembodiment of the invention, that preferably depends on the 14thor 15thembodiment of the invention.

[0040] In a preferred embodiment of the component, the inorganic material A, or the inorganic material B, or each of both is an oxide, or a nitride, or both. This preferred embodiment is a 17thembodiment of the invention, that preferably depends on any of the 7thor 16thembodiments of the invention.

[0041] In this context, one selected from the group consisting of silicon dioxide, an aluminium oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, a tantalum oxide, a lanthanide oxide, and a molybdenum oxide, or a combination of at least two thereof is preferred for the oxide. A preferred lanthanide oxide is a lanthanum oxide. A preferred tantalum oxide is tantalum pentoxide. A preferred aluminium oxide is aluminium (III) oxide. Additionally or alternatively, one selected from the group consisting of silicon nitride, aluminium nitride, and silicon oxynitride, or a combination of at least two thereof is preferred for the at least one nitride.

[0042] In a preferred embodiment of the component, a minimum distance between the dielectric layer A and the dielectric layer B is less than 500 nm, preferably less than 450 nm, more preferably less than 400 nm, more preferably less than 350 nm, more preferably less than 300 nm, more preferably less than 250 nm, more preferably less than 200 nm, more preferably less than 150 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, even more preferably less than 20 nm, most preferably less than 10 nm. This preferred embodiment is an 18thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0043] In a preferred embodiment of the component, the dielectric layer A adjoins the dielectric layer B. This preferred embodiment is a 19thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0044] In a preferred embodiment of the component, the first electrical conductor layer is at least partially embedded in the dielectric layer B. This preferred embodiment is a 20thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0045] In a preferred embodiment of the component, a further electrical connection extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer. This preferred embodiment is a 21stembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention. In a preferred aspect of the 21stembodiment, the further electrical connection does not extend to the further side of the component.

[0046] In a preferred embodiment of the component, the layer sequence further comprises a further electrical conductor layer; wherein, in the view in the first direction at least the first region of the first electrical conductor layer, at least a first region of the further electrical conductor layer and at least the first region of the optical element layer overlap one another. This preferred embodiment is a 22ndembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention. In a preferred embodiment of the component, the further electrical conductor layer superimposes the optical element layer on a side of the optical element layer which faces the first side of the component, or on a side of the optical element layer which faces the further side of the component, or both. This preferred embodiment is a 23rdembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0047] Preferably, the further electrical conductor layer superimposes the optical element layer on the same side of the optical element layer as the first electrical conductor layer.

[0048] In a preferred embodiment of the component, the further electrical conductor layer is arranged between the dielectric layer A and the optical element layer. This preferred embodiment is a 24thembodiment of the invention, that preferably depends on the 22ndor 23rdembodiment of the invention.

[0049] Preferably, the further electrical conductor layer is arranged between the first electrical conductor layer and the optical element layer.

[0050] In a preferred embodiment of the component, the further electrical conductor layer is at least partially embedded in the dielectric layer B. This preferred embodiment is a 25thembodiment of the invention, that preferably depends on any of the 22ndto 24thembodiments of the invention.

[0051] In a preferred embodiment of the component, a further electrical connection extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the further electrical conductor layer. This preferred embodiment is a 26thembodiment of the invention, that preferably depends on any of the 22ndto 25thembodiments of the invention. In a preferred aspect of the 26thembodiment, the further electrical connection does not extend to the further side of the component

[0052] In a preferred embodiment of the component, the further electrical conductor layer has a layer thickness of less than 1 pm, preferably less than 900 nm, more preferably less than 800 nm, more preferably less than 700 nm, more preferably less than 600 nm, more preferably less than 500 nm, more preferably less than 400 nm, more preferably less than 300 nm, more preferably less than 200 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, more preferably less than 20 nm, more preferably less than 10 nm, more preferably less than 9 nm, more preferably less than 8 nm, more preferably less than 7 nm, more preferably less than 6 nm, more preferably less than 5 nm, more preferably less than 4 nm, more preferably less than 3 nm, more preferably less than 2 nm even more preferably less than 1 nm. This preferred embodiment is a 27thembodiment of the invention, that preferably depends on any of the 22ndto 26thembodiments of the invention.

[0053] Preferably, the lower limit of the thickness of the further electrical conductor layer is the thickness of an atomic monolayer or molecular monolayer of the material of the further electrical conductor layer. Preferably, the further electrical conductor layer consists of the same material as the first electrical conductor layer.

[0054] In a preferred embodiment of the component, the further electrical conductor layer consists of a number of layers of atoms or molecules, wherein the number of layers of atoms or molecules is at least 1 , preferably in the range from 1 to 10, preferably from 1 to 9, more preferably from 1 to 8, more preferably from 1 to 7, more preferably from 1 to 6, more preferably from 1 to 5, more preferably from 1 to 4, more preferably from 1 to 3, even more preferably the number of layers of atoms or molecules is 1 or 2, most preferably 1. This preferred embodiment is a 28thembodiment of the invention, that preferably depends on any of the 22ndto 27thembodiments of the invention.

[0055] The layers of atoms or molecules follow one another in the first direction. Preferred layers of atoms are layers of carbon atoms.

[0056] In a preferred embodiment of the component, the first electrical conductor layer is at least partially embedded in the dielectric layer B at a first distance from the optical element layer. This preferred embodiment is a 29thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0057] In a preferred embodiment of the component, the further electrical conductor layer is at least partially embedded in the dielectric layer B at a further distance from the optical element layer; wherein the first distance is more than the further distance. This preferred embodiment is a 30thembodiment of the invention, that preferably depends on the 29thembodiment of the invention.

[0058] In a preferred embodiment of the component, the first distance is more than the further distance by a value in the range from 3 to 30 nm, preferably from 5 to 25 nm, more preferably from 10 to 15 nm. This preferred embodiment is a 31stembodiment of the invention, that preferably depends on the 30thembodiment of the invention.

[0059] In a preferred embodiment of the component, the first distance is in the range from 3 to 60 nm, preferably from 5 to 50 nm, more preferably from 10 to 25 nm. This preferred embodiment is a 32ndembodiment of the invention, that preferably depends on any of the 29thto 31stembodiments of the invention. In a preferred embodiment of the component, the further distance is in the range from 0 to 30 nm, preferably from 0 to 25 nm, more preferably from 0 to 10 nm. This preferred embodiment is a 33rdembodiment of the invention, that preferably depends on any of the 30thto 32ndembodiments of the invention.

[0060] In a preferred embodiment of the component, the optical element layer is a full and continuous layer of the layer sequence. This preferred embodiment is a 34thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0061] In a preferred embodiment of the component, the optical element layer is at least partially embedded in a dielectric layer C: wherein the dielectric layer C is a layer of the layer sequence and follows the dielectric layer B in the first direction. This preferred embodiment is a 35thembodiment of the invention, that preferably depends on any of the 1stto 33rdembodiments of the invention.

[0062] Preferably, the dielectric layer C comprises, preferably consists of, an inorganic material C. The inorganic material C is preferably the same as the inorganic material A. Preferably, the dielectric layer C comprises the inorganic material C in a proportion of at least 50 wt.-%, more preferably at least 60 wt-%, more preferably at least 70 wt- %, more preferably at least 80 wt.-%, even more preferably at least 90 wt-%, in each case based on the weight of the dielectric layer C. Preferably, the inorganic material C is an oxide, or a nitride, or both. In this context, one selected from the group consisting of silicon dioxide, an aluminium oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, a tantalum oxide, a lanthanide oxide, and a molybdenum oxide, or a combination of at least two thereof is preferred for the oxide. A preferred lanthanide oxide is a lanthanum oxide. A preferred tantalum oxide is tantalum pentoxide. A preferred aluminium oxide is aluminium (III) oxide. Additionally or alternatively, one selected from the group consisting of silicon nitride, aluminium nitride, and silicon oxynitride, or a combination of at least two thereof is preferred for the at least one nitride. The optical element layer may adjoin the dielectric layer C or there may be at least one additional layer or material between the optical element layer and the dielectric layer C. A preferred dielectric layer C is a cladding to the optical element layer. This is particularly preferred if the optical element layer is a waveguide.

[0063] In a preferred embodiment of the component, a refractive index of the dielectric layer C is smaller than a refractive index of the optical element layer, preferably by at least 0.03 more preferably at least 0.1, most preferably at least 0.4. This preferred embodiment is a 36thembodiment of the invention, that preferably depends on the 35thembodiment of the invention. In a preferred embodiment of the component, at least one, preferably each, of the following applies: a] the first electrical conductor layer includes a second region, which, in the view in the first direction, does not overlap with the further electrical conductor layer, or does not overlap with the optical element layer, or does not overlap with any of both; b] the first electrical conductor layer includes a third region, which, in the view in the first direction, does not overlap with the further electrical conductor layer, or does not overlap with the optical element layer, or does not overlap with any of both; c] in the view in the first direction the first region of the first electrical conductor layer overlaps with the optical element layer over an entire surface of the optical element layer which faces towards the first side of the component; d] the further electrical conductor layer includes a second region, which, in the view in the first direction, does not overlap with the first electrical conductor layer, or does not overlap with the optical element layer, or does not overlap with any of both; e] in the view in the first direction the first region of the further electrical conductor layer overlaps with the optical element layer over the entire surface of the optical element layer which faces towards the first side of the component.

[0064] This preferred embodiment is a 37thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0065] Particularly preferred combinations of the above items are a] b], a] b] c], a] d], a] c] d] and a] c] d] e]. Preferably, the first region of the first electrical conductor layer is arranged between the second region and the third region, in each case of the first electrical conductor layer. Preferably, the second region of the first electrical conductor layer is arranged at a first end of the first electrical conductor layer and the third region of the first electrical conductor layer is arranged at a further end of the first electrical conductor layer, which is opposite the first end. Preferably, the second region of the further electrical conductor layer is arranged at an end of the further electrical conductor layer.

[0066] In a preferred embodiment of the component, one or two of the following applies: a# the first electrical connection electrically connects to the second region of the first electrical conductor layer; b# the further electrical connection electrically connects to the third region of the first electrical conductor layer; c# the further electrical connection electrically connects to the second region of the further electrical conductor layer. This preferred embodiment is a 38thembodiment of the invention, that preferably depends on the 37thembodiment of the invention.

[0067] Particularly preferred combinations of the above items are a# b# and a# c#.

[0068] In a preferred embodiment of the component, one or two of the following applies: a~ the first electrical connection connects to a surface of the first electrical conductor layer, which faces towards the first side of the component; b~ the further electrical connection connects to the surface of the first electrical conductor layer, which faces towards the first side of the component; c~ the further electrical connection connects to a surface of the further electrical conductor layer, which faces towards the first side of the component; d~ the first electrical connection extends through the first electrical conductor layer in the first direction; e~ the further electrical connection extends through the first electrical conductor layer in the first direction; f~ the further electrical connection extends through the further electrical conductor layer in the first direction.

[0069] This preferred embodiment is a 39thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0070] According to a~, the first electrical connection does not extend through the first electrical conductor layer. According to b~, the further electrical connection does not extend through the first electrical conductor layer. According to c~, the further electrical connection does not extend through the further electrical conductor layer. Particularly preferred combinations of the above items are a~ b~, a~ c~, d~ e~, d~ f, a~ e~, a~ f~, d~ b~ and d~ c~.

[0071] In a preferred embodiment of the component, at least one, preferably each, of the following applies to the dielectric layer A: a} has an electrical conductivity which is less than IO-5S / m, preferably less than IO-8S / m, more preferably less than 10-11S / m; b} comprises, preferably consists of, at least one oxide, or at least one nitride, or both; c} has a layer thickness in the range from 20 to 1,000 nm, preferably from 100 to 750 nm, more preferably from 200 to 600 nm.

[0072] This preferred embodiment is a 40thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention. Particularly preferred combinations of the above items are a}, b}, c}, a} b}, a} c}, b} c}, a} b} c}. One selected from the group consisting of silicon dioxide, an aluminium oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, a lanthanide oxide, and a tantalum oxide, or a combination of at least two thereof is preferred for the at least one oxide. A preferred lanthanide oxide is a lanthanum oxide. A preferred tantalum oxide is tantalum pentoxide. A preferred aluminium oxide is aluminium(III) oxide. Additionally or alternatively, one selected from the group consisting of silicon nitride, aluminium nitride, and silicon oxynitride, or a combination of at least two thereof is preferred for the at least one nitride.

[0073] In a preferred embodiment of the component, at least one, preferably each, of the following applies to the dielectric layer B: a: has an electrical conductivity which is less than IO-5S / m, preferably less than IO-9S / m, more preferably less than IO-11S / m; b: comprises, preferably consists of, at least one oxide, or at least one nitride, or both; c: has a layer thickness in the range from more than 0 up to 100 nm, preferably from 1 to 100 nm, more preferably from 5 to 50 nm, more preferably from 5 to 30 nm.

[0074] This preferred embodiment is a 41stembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0075] Particularly preferred combinations of the above items are a:, b:, c:, a: b:, a: c:, b: c:, a: b: c:. One selected from the group consisting of silicon dioxide, an aluminium oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, a lanthanide oxide, and a tantalum oxide, or a combination of at least two thereof is preferred for the at least one oxide. A preferred lanthanide oxide is a lanthanum oxide. A preferred tantalum oxide is tantalum pentoxide. A preferred aluminium oxide is aluminium(III) oxide. Additionally or alternatively, one selected from the group consisting of silicon nitride, aluminium nitride, and silicon oxynitride, or a combination of at least two thereof is preferred for the at least one nitride.

[0076] In a preferred embodiment of the component, at least one, preferably each, of the following applies to the first electrical conductor layer, or to the further electrical conductor layer, or to each of both: a> has an electrical conductivity of at least 1 S / m, preferably at least 100 S / m, more preferably at least 1,000 S / m; b> comprises, preferably consists of, one selected from the group consisting of carbon, a nitride, at least one metal, at least one metal alloy, at least one conductive oxide, at least one conductive polymer, at least one chalcogen, or a combination of at least two thereof; c> has a length in the range from 10 jam to 1 mm, preferably from 20 to 500 pm, more preferably from 50 to 200 pm; d> has a width in the range from 200 nm to 10 pm, preferably from 500 nm to 5 pm, more preferably from 1 to 3 pm; e> has a layer thickness in the range from 0.1 to 40 nm, preferably from 0.1 to 30 nm, more preferably from 0.1 to 20 nm, more preferably from 0.1 to 10 nm, more preferably from 0.1 to 5 nm; even more preferably from 0.2 to 0.5 nm; f> consists in the first direction of a number of atomic layers which is at least 1 , preferably in the range from 1 to 10, preferably from 1 to 6, more preferably from 1 to 5, more preferably from 1 to 4, more preferably from 1 to 3, even more preferably of 1 or 2, most preferably of 1.

[0077] This preferred embodiment is a 42ndembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0078] Particularly preferred combinations of the above items are a>, b>, c>, d>, e>, f>, a> b> e>, a> b> f>, a> b>, a> e>, a> f>, a> e>, b> f>, c> d>, c> d> e>, c> d> f>, a> b> c> d> e> f>. In this context, a preferred form of carbon is graphene. A preferred conductive oxide is a titanate. A preferred titanate is calcium titanate. A preferred form of calcium titanate is perovskite. Preferably, the first electrical conductor layer consists of the same material as the further electrical conductor layer.

[0079] In a preferred embodiment of the component, the first electrical conductor layer, or the further electrical conductor layer, or each of both is a graphene sheet. This preferred embodiment is a 43rdembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0080] In a preferred embodiment of the component, the first region of the first electrical conductor layer and the first region of the further electrical conductor layer are adapted and arranged to function together as a capacitor. This preferred embodiment is a 44thembodiment of the invention, that preferably depends on any of the 22ndto 43rdembodiments of the invention.

[0081] In a preferred embodiment of the component, the first region of the first electrical conductor layer and the first region of the further electrical conductor layer are adapted and arranged to have an RC time constant which is less than 50 ns, preferably less than 10 ns, more preferably less than 1 ns, and further preferably less than 0.5 ns. This preferred embodiment is a 45thembodiment of the invention, that preferably depends on any of the 22ndto 44thembodiments of the invention. In a preferred embodiment of the component, at least one, preferably each, of the following applies to the dielectric layer C: a- has an electrical conductivity which is less than 10'5S / m, preferably less than 10'8S / m, more preferably less than 10'11S / m; b- comprises, preferably consists of, at least one oxide, or at least one nitride, or both; c- has a layer thickness in the range from 1 to 5,000 nm, preferably from 500 to 4,500 nm, more preferably from 1,000 to 4,000 nm, more preferably from 1,500 to 3,500 nm, even more preferably from 2,000 to 3,000 nm, most preferably from 2,100 to 2,500 nm.

[0082] This preferred embodiment is a 46thembodiment of the invention, that preferably depends on any of the 35thto 45thembodiments of the invention.

[0083] Particularly preferred combinations of the above items are a-, b-, c-, a- b-, a- c-, b- c-, a- b- c-. One selected from the group consisting of silicon dioxide, an aluminium oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, a lanthanide oxide, and a tantalum oxide, or a combination of at least two thereof is preferred for the at least one oxide. A preferred lanthanide oxide is a lanthanum oxide. A preferred tantalum oxide is tantalum pentoxide. A preferred aluminium oxide is aluminium(III) oxide. Additionally or alternatively, one selected from the group consisting of silicon nitride, aluminium nitride, and silicon oxynitride, or a combination of at least two thereof is preferred for the at least one nitride.

[0084] In a preferred embodiment of the component, at least one, preferably each, of the following applies to the optical element layer: a_ is adapted and arranged to be in opto-electronic interaction with the first region of the first electrical conductor layer, or the first region of the further electrical conductor layer, or both; b_ comprises one selected from the group consisting of silicon, oxygen, aluminium, iridium, tantalum, titanium, nitrogen, lithium, niobium, indium, phosphorus, gallium, arsenic, barium, a chalcogenide, at least one polymer, and a resin, or a combination of at least two thereof; c_ has a width in the range from 500 to 2,500 nm, preferably from 900 to 1 ,200 nm, more preferably from 950 to 1,050 nm; d_ has a thickness in the range from 60 to 1 ,000 nm, preferably from 200 to 500 nm, more preferably from 300 to 400 nm.

[0085] This preferred embodiment is a 47thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0086] Particularly preferred combinations of the above items are a_, b_, c_, d_, b_ d_, c_ d_, b_ c_ d_, a_ b_ c_ d_. Preferred combinations of the materials mentioned in b_ include titanium dioxide, aluminium nitride, tantalum pentoxide, silicon nitride, aluminium oxide, silicon oxynitride, lithium niobate, silica, indium phosphide, gallium arsenide, indium gallium arsenide, barium titanate, and aluminium gallium arsenide. A preferred chalcogenide is a dichalcogenide, more preferably a transition metal dichalcogenide. In a preferred embodiment, the optical element layer has a thickness in the range from 300 to 500 nm, preferably from 320 to 420 nm, more preferably from 340 to 360 nm. Alternatively or additionally preferred the optical element layer has a width in the range from 200 to 2,000 nm, preferably from 500 to 1,500 nm, more preferably from 900 to 1,100 nm. In this embodiment, the optical element layer particularly preferable comprises, more preferably consists of, silicon nitride. According to a_, the optical element layer is preferably adapted and arranged for an evanescent electromagnetic field of an electromagnetic wave, which propagates through the optical element layer, to interact with the first region of the first electrical conductor layer, or the first region of the further electrical conductor layer, or both.

[0087] In a preferred embodiment of the component, the optical element layer is one selected from the group consisting of a waveguide, a grating, a prism, a lens, and a coupler, or a combination of at least two thereof. This preferred embodiment is a 48thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0088] In a preferred embodiment of the component, the waveguide is adapted and arranged for the propagation of electromagnetic waves which have wavelengths in the range from 300 nm to 3,000 nm, preferably in the range of 800 nm to 2,100 nm, and more preferably in the range of 1,250 nm to 1,650 nm; This preferred embodiment is a 49thembodiment of the invention, that preferably depends on the 48thembodiment of the invention.

[0089] A preferred waveguide is adapted and arranged for the propagation of electromagnetic waves that have wavelengths in at least one or all of the following ranges: 1,260 nm to 1,360 nm (also known as the Original Band or O-Band), 1 ,360 nm to 1 ,460 nm (also known as the Extend Band or E-Band), 1 ,460 nm to 1,530 nm (also known as the Short Band or S-Band), 1,530 nm to 1,565 nm (also known as the Conventional Band or C-Band), and 1,565 nm to 1,625 nm (also known as the Long Band or L-Band). In an aspect of the invention, it is particularly preferred that the waveguide is adapted and arranged for the propagation of electromagnetic waves that have wavelengths in the O- band, the C-band, or both.

[0090] In a preferred embodiment of the component, a first layer surface of the dielectric layer C faces towards the first side of the component, wherein a first surface of the optical element layer faces towards the first side of the component, wherein, in the first direction, the first surface of the optical element layer has a maximum distance from the first layer surface of the dielectric layer C in the range from 0 to 50 nm, preferably from 0 to 30 nm, more preferably from 0 to 20 nm. This, in particular, limits the height of any step from the first layer surface of the dielectric layer C to the first surface of the optical element layer and vice versa. This preferred embodiment is a 50thembodiment of the invention, that preferably depends on any of the 35thto 49thembodiments of the invention.

[0091] In a preferred embodiment of the component, the dielectric layer C and the optical element layer together form an embedded optical element layer; wherein each cross-section through the layer sequence includes a section of the embedded optical element layer, which extends in both lateral directions from a centre of the optical element layer in the cross-section by a length which is two times a dimension of the optical element layer in the cross-section, wherein in no cross-section through the layer sequence a difference between a minimum of the thickness of the embedded optical element layer in the section and a maximum of the embedded optical element layer in the section is more than 20 nm, preferably more than 10 nm, more preferably more than 5 nm. This, in particular, limits the height of any step between the dielectric layer Cand the optical element layer. This preferred embodiment is a 51stembodiment of the invention, that preferably depends on any of the 35thto 50thembodiments of the invention.

[0092] In a preferred embodiment of the component, the layer sequence further comprises a substrate layer on a side of the optical element layer, which faces towards the further side of the component. This preferred embodiment is a 52ndembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0093] In a preferred embodiment of the component, at least one, preferably each, of the following applies to the substrate layer: a' comprises, preferably consists of, one selected from the group consisting of silicon, silicon carbide, gallium arsenide, indium phosphide, a glass, and a polymer, or a combination of at least two thereof; b' has a length in the range from 5 mm to 1 m, preferably from 10 mm to 900 mm, more preferably from 20 mm to 800 mm, more preferably from 30 mm to 700 mm, more preferably from 50 mm to 600 mm, more preferably from 100 mm to 500 mm, more preferably from 150 mm to 400 mm, more preferably from 200 mm to 300 mm; c' has a width in the range from 5 mm to 1 m, preferably from 10 mm to 900 mm, more preferably from 20 mm to 800 mm, more preferably from 30 mm to 700 mm, more preferably from 50 mm to 600 mm, more preferably from 100 mm to 500 mm, more preferably from 150 mm to 400 mm, more preferably from 200 mm to 300 mm; d' has a layer thickness in the range from 10 pm to 1 mm, preferably from 675 to 800 pm.

[0094] This preferred embodiment is a 53rdembodiment of the invention, that preferably depends on the 52ndembodiment of the invention.

[0095] Particularly preferred combinations of the above items are a’, b’, c’, d’, b’ d’, a’ d’, b’ c’ d’, b’ c’, a’ b’ c’ d’. In a preferred embodiment of the component, at least one, preferably each, of the following applies to the first electrical connection, to the further electrical connection, or to each of both: a* has an electrical conductivity which is at least 103S / m, preferably at least 105S / m, more preferably at least 106S / m; b* comprises, preferably consists of, one selected from the group consisting of at least one metal, nitrogen, carbon, or a combination of at least two thereof; c* has a maximum diameter in the range from 20 to 2,000 nm, preferably from 30 to 1 ,500 nm, more preferably from 50 to 1,000 nm, even more preferably from 150 to 700 nm, most preferably from 200 to 500 nm.

[0096] This preferred embodiment is a 54thembodiment of the invention, that preferably depends on any of preceding embodiments of the invention.

[0097] Particularly preferred combinations of the above items are a*, b*, c*, a* b*, a* c*, b* c*, a* b* c*. A preferred metal is titanium. Preferred combinations of the constituents in b* are TiN, TaN and TiCN. A preferred form of carbon is graphene.

[0098] In a preferred embodiment of the component, a distance along the first direction between the first electrical conductor layer, or the further electrical conductor layer, or each of both, and the optical element layer is at least 500 nm, preferably at least 600 nm, more preferably at least 700 nm, more preferably at least 800 nm, more preferably at least 900 nm, more preferably at least 1,100 nm, more preferably at least 1,200 nm, more preferably at least 1,300 nm, more preferably at least 1,400 nm, more preferably at least 1,500 nm, more preferably at least 1,600 nm, more preferably at least 1,700 nm, more preferably at least 1,800 nm, more preferably at least 1,900 nm, more preferably at least 2,000 nm, more preferably at least 2,100 nm, more preferably at least 2,200 nm, more preferably at least 2,300 nm, more preferably at least 2,400 nm, more preferably at least 2,500 nm, more preferably at least 2,600 nm, more preferably at least 2,700 nm, more preferably at least 2,800 nm, even more preferably at least 2,900 nm, most preferably at least 3,000 nm. This preferred embodiment is a 55thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention.

[0099] In a preferred embodiment of the component, the component is an opto-electronic component. This preferred embodiment is a 56thembodiment of the invention, that preferably depends on any of the preceding embodiments of the invention. In a preferred embodiment of the component, the opto-electronic component is one selected from the group consisting of a modulator, a detector, a filter, an interferometer, and a bolometer, or a combination of at least two thereof. This preferred embodiment is a 57thembodiment of the invention, that preferably depends on the 56thembodiment of the invention.

[0100] A preferred detector is adapted and arranged for the detection of one selected from the group consisting of a virus, an antibody, a biomarker, and a biomolecule, or of a combination of at least two thereof. A further preferred detector is a photodetector or a bolometer or both.

[0101] A 58thembodiment of the invention is a method comprising as method steps in the following order:

[0102] A. providing a component precursor, comprising a layer sequence, including at least the following layers superimposed on one another in the given order from a first side of the component precursor to a further side of the component precursor, which is opposite to the first side:

[0103] I. a dielectric layer A,

[0104] II. a dielectric layer B, and

[0105] III. an optical element layer; wherein the dielectric layer A is less resistant to a first etching method than the dielectric layer B, and the dielectric layer B is less resistant to a further etching method than the dielectric layer A; wherein the layer sequence further comprises a first electrical conductor layer; wherein, in a view in a first direction, which runs from the first side to the further side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap one another; wherein a first layer surface of the dielectric layer A faces away from the dielectric layer B; wherein a first through-hole extends from the first layer surface of the dielectric layer A through the dielectric layer A;

[0106] B . extending the first through-hole at least to the first electrical conductor layer by the further etching method; and

[0107] C. introducing a first electrically conductive material into the first through-hole to obtain a first electrical connection, which extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer.

[0108] Preferably, the dielectric layer A has one or more of the features of the dielectric layer A of the component of the invention according to any of its embodiments. Additionally or alternatively preferred, the dielectric layer B has one or more of the features of the dielectric layer B of the component of the invention according to any of its embodiments. Additionally or alternatively preferred, the optical element layer has one or more of the features of the optical element layer of the component of the invention according to any of its embodiments. Additionally or alternatively preferred, the first electrical conductor layer has one or more of the features of the first electrical conductor layer of the component of the invention according to any of its embodiments. Additionally or alternatively preferred, the first electrical connection has one or more of the features of the first electrical connection of the component of the invention according to any of its embodiments. In the method step C., the first through-hole is preferably filled or coated with the first electrically conductive material. Coating the first through-hole with the first electrically conductive material creates a liner of the first electrically conductive material. Preferably, the first through-hole is coated with a first electrically conductive material a and subsequently filled with a first electrically conductive material b, where the first electrically conductive material a is different from the first electrically conductive material b. Preferably, the first electrically conductive material a and the first electrically conductive material b are both metals. A preferred first electrically conductive material a is titanium. A preferred first electrically conductive material b is tungsten. In a preferred aspect of the 58thembodiment, preferably step A., either the first side of the component precursor or the further side of the component precursor faces a front-end-of-line layer. In this aspect it is more preferred that the further side of the component precursor faces the front-end-of-line layer. In a preferred aspect of the 58thembodiment, step C., the first electrical connection does not extend to the further side of the component.

[0109] In a preferred embodiment of the method, the first electrical conductor layer superimposes the optical element layer on a side of the optical element layer which faces the first side of the component precursor, or on a side of the optical element layer which faces the further side of the component precursor, or both. This preferred embodiment is a 59thembodiment of the invention, that preferably depends on the 58thembodiment of the invention.

[0110] In a preferred embodiment of the method, the first electrical conductor layer is arranged between the dielectric layer A and the optical element layer. This preferred embodiment is a 60thembodiment of the invention, that preferably depends on the 58thor 59thembodiment of the invention.

[0111] In a preferred embodiment of the method, the method step A. includes superimposing the dielectric layer A to the dielectric layer B by a dry method. This preferred embodiment is a 61stembodiment of the invention, that preferably depends on any of the 58thto 60thembodiments of the invention.

[0112] The dry method does not include applying a liquid precursor of the dielectric layer A, which includes a liquid vehicle, in particular a solvent, to a substrate. A preferred dry method is a vapour deposition method or atomic layer deposition. A preferred vapour deposition method is chemical vapour deposition or physical vapour deposition. In a preferred embodiment of the method, the method step A. includes forming the first through-hole in the dielectric layer A by the first etching method. This preferred embodiment is a 62ndembodiment of the invention, that preferably depends on any of the 58thto 61stembodiments of the invention.

[0113] In a preferred embodiment of the method, in the method step A., additionally a further through-hole extends from the first layer surface of the dielectric layer A through the dielectric layer A. This preferred embodiment is a 63rdembodiment of the invention, that preferably depends on any of the 58thto 62ndembodiments of the invention.

[0114] In a preferred embodiment of the method, the method step A. includes forming the further through-hole in the dielectric layer A by the first etching method. This preferred embodiment is a 64thembodiment of the invention, that preferably depends on the 63rdembodiment of the invention.

[0115] In a preferred embodiment of the method, the method step B. additionally includes extending the further through- hole at least to the first electrical conductor layer by the further etching method; wherein the method step C. additionally includes introducing a further electrically conductive material into the further through-hole to obtain a further electrical connection, which extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer. This preferred embodiment is a 65thembodiment of the invention, that preferably depends on the 63rdor 64thembodiment of the invention.

[0116] In the method step C., the further through-hole is preferably filled or coated with the further electrically conductive material. Coating the further through-hole with the further electrically conductive material creates a liner of the further electrically conductive material. Preferably, the further through-hole is coated with a further electrically conductive material a and subsequently filled with a further electrically conductive material b, where the further electrically conductive material a is different from the further electrically conductive material b. Preferably, the further electrically conductive material a and the further electrically conductive material b are both metals. A preferred further electrically conductive material a is titanium. A preferred further electrically conductive material b is tungsten.

[0117] In a preferred embodiment of the method, the method comprises a further method step of forming a further through- hole, which extends from the first layer surface of the dielectric layer A through the dielectric layer A, by the first etching method. This preferred embodiment is a 66thembodiment of the invention, that preferably depends on any of the 58thto 62ndembodiments of the invention. In a preferred embodiment of the method, the further method step is conducted between the method steps B. and C., or after the method step C. This preferred embodiment is a 67thembodiment of the invention, that preferably depends on the 66thembodiment of the invention.

[0118] In a preferred embodiment of the method, the method additionally comprises as method steps in the following order:

[0119] A) extending the further through-hole at least to the first electrical conductor layer by the further etching method; and

[0120] B) introducing a further electrically conductive material into the further through-hole to obtain a further electrical connection, which extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the first electrical conductor layer.

[0121] This preferred embodiment is a 68thembodiment of the invention, that preferably depends on any of the 63rd, 64th, 66thor 67thembodiments of the invention.

[0122] In the method step B), the further through-hole is preferably filled or coated with the further electrically conductive material. Coating the further through-hole with the further electrically conductive material creates a liner of the further electrically conductive material. Preferably, the further through-hole is coated with a further electrically conductive material a and subsequently filled with a further electrically conductive material b, where the further electrically conductive material a is different from the further electrically conductive material b. Preferably, the further electrically conductive material a and the further electrically conductive material b are both metals. A preferred further electrically conductive material a is titanium. A preferred further electrically conductive material b is tungsten.

[0123] In a preferred embodiment of the method, the first etching method includes steps of

[0124] A] superimposing a photoresist layer to the dielectric layer A on a side of the dielectric layer A, which is opposite the dielectric layer B;

[0125] B] partially irradiating the photoresist layer in at least one region of the photoresist layer;

[0126] C] removing the at least one region or another at least one region of the photoresist layer, thereby obtaining a first auxiliary through-hole in the photoresist layer, or a further auxiliary through- hole in the photoresist layer, or both; and

[0127] D] introducing a first etchant into the first auxiliary through-hole, or the further auxiliary through- hole, or both, and forming the first through-hole in the dielectric layer A, or the further through- hole in the dielectric layer A, or both.

[0128] This preferred embodiment is a 69thembodiment of the invention, that preferably depends on any of the 58thto 68thembodiments of the invention. In a preferred embodiment of the method, the first etching method further includes a step

[0129] E] removing the photoresist layer.

[0130] This preferred embodiment is a 70thembodiment of the invention, that preferably depends on the 69thembodiment of the invention.

[0131] In a preferred embodiment of the method, in the method step A. the layer sequence further comprises a further electrical conductor layer, wherein, in the view in the first direction at least the first region of the first electrical conductor layer, at least a first region of the further electrical conductor layer and at least the first region of the optical element layer overlap one another. This preferred embodiment is a 71stembodiment of the invention, that preferably depends on any of the 58thto 70thembodiments of the invention.

[0132] Preferably, the further electrical conductor layer superimposes the optical element layer on a side of the optical element layer which faces the first side of the component precursor, or on a side of the optical element layer which faces the further side of the component precursor, or both. Particularly preferred, the further electrical conductor layer is arranged between the dielectric layer A and the optical element layer, more preferably between the first electrical conductor layer and the optical element layer.

[0133] In a preferred embodiment of the method, the method step B. additionally includes extending the further through- hole at least to the further electrical conductor layer by the further etching method; wherein the method step C. additionally includes introducing a further electrically conductive material into the further through-hole to obtain a further electrical connection, which extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the further electrical conductor layer. This preferred embodiment is a 72ndembodiment of the invention, that preferably depends on the 71stembodiment of the invention.

[0134] In the method step C., the further through-hole is preferably filled or coated with the further electrically conductive material. Coating the further through-hole with the further electrically conductive material creates a liner of the further electrically conductive material. Preferably, the further through-hole is coated with a further electrically conductive material a and subsequently filled with a further electrically conductive material b, where the further electrically conductive material a is different from the further electrically conductive material b. Preferably, the further electrically conductive material a and the further electrically conductive material b are both metals. A preferred further electrically conductive material a is titanium. A preferred further electrically conductive material b is tungsten. In a preferred embodiment of the method, the method additionally comprises as method steps in the following order:

[0135] A) extending the further through-hole at least to the further electrical conductor layer by the further etching method; and

[0136] B) introducing a further electrically conductive material into the further through-hole to obtain a further electrical connection, which extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and electrically connects to the further electrical conductor layer.

[0137] This preferred embodiment is a 73rdembodiment of the invention, that preferably depends on the 71stembodiment of the invention.

[0138] In the method step B), the further through-hole is preferably filled or coated with the further electrically conductive material. Coating the further through-hole with the further electrically conductive material creates a liner of the further electrically conductive material. Preferably, the further through-hole is coated with a further electrically conductive material a and subsequently filled with a further electrically conductive material b, where the further electrically conductive material a is different from the further electrically conductive material b. Preferably, the further electrically conductive material a and the further electrically conductive material b are both metals. A preferred further electrically conductive material a is titanium. A preferred further electrically conductive material b is tungsten.

[0139] In a preferred embodiment of the method, the method step A), or the method steps A) and B) is / are conducted between the method steps B. and C., or after the method step C.

[0140] This preferred embodiment is a 74thembodiment of the invention, that preferably depends on any of the 68thto 73rdembodiments of the invention.

[0141] In a preferred embodiment of the method, one or two of the following applies: a~ the first electrical connection electrically connects to the first electrical conductor layer in that the first electrical connection contacts a surface of the first electrical conductor layer, which faces towards the first side of the component precursor; b~ the further electrical connection electrically connects to the first electrical conductor layer in that the further electrical connection contacts the surface of the first electrical conductor layer, which faces towards the first side of the component precursor; c~ the further electrical connection electrically connects to the further electrical conductor layer in that the further electrical connection contacts a surface of the further electrical conductor layer, which faces towards the first side of the component precursor; d~ before introducing the first electrically conductive material into the first through-hole, the first through-hole is extended through the first electrical conductor layer in the first direction, and the first electrical connection electrically connects to the first electrical conductor layer in that the first electrical connection extends through the first electrical conductor layer in the first direction; e~ before introducing the further electrically conductive material into the further through-hole, the further through-hole is extended through the first electrical conductor layer in the first direction, and the further electrical connection electrically connects to the first electrical conductor layer in that the further electrical connection extends through the first electrical conductor layer in the first direction; f~ before introducing the further electrically conductive material into the further through-hole, the further through-hole is extended through the further electrical conductor layer in the first direction, and the further electrical connection electrically connects to the further electrical conductor layer in that the further electrical connection extends through the further electrical conductor layer in the first direction.

[0142] This preferred embodiment is a 75thembodiment of the invention, that preferably depends on any of the 58thto 74thembodiments of the invention.

[0143] Particularly preferred combinations of the above items are a~ b~, a~ c~, d~ e~ and d~ f~.

[0144] In a preferred embodiment of the method, in the method step A., the optical element layer is a full and continuous layer of the layer sequence. This preferred embodiment is a 76thembodiment of the invention, that preferably depends on any of the 58thto 75thembodiments of the invention.

[0145] In a preferred embodiment of the method, wherein, in the method step A., the optical element layer is at least partially embedded in a dielectric layer C; wherein the dielectric layer C is a layer of the layer sequence and follows the dielectric layer B in the first direction. This preferred embodiment is a 77thembodiment of the invention, that preferably depends on any of the 58thto 75thembodiments of the invention.

[0146] In a preferred embodiment of the method, in the method step A., the layer sequence further comprises a substrate layer on a side of the optical element layer, which faces towards the further side of the component precursor. This preferred embodiment is a 78thembodiment of the invention, that preferably depends on any of the 58thto 77thembodiments of the invention.

[0147] Preferably, the substrate layer has one or more of the features of the substrate layer of the component of the invention according to any of its embodiments. In a preferred embodiment of the method, after the method step C. , the method further comprises a step of separating a region of the layer sequence from the component precursor, thereby obtaining a component, wherein the region includes at least a section of the optical element layer. This preferred embodiment is a 79thembodiment of the invention, that preferably depends on any of the 58thto 78thembodiments of the invention.

[0148] In a preferred embodiment of the method, the first through-hole or the further through-hole or each of both has a maximum diameter in the range from 20 to 2,000 nm, preferably from 30 to 1,500 nm, more preferably from 50 to 1,000 nm, even more preferably from 150 to 700 nm, most preferably from 200 to 500 nm. This preferred embodiment is an 80thembodiment of the invention, that preferably depends on any of the 58thto 79thembodiments of the invention.

[0149] In a preferred embodiment of the method, the component precursor is an opto-electronic component precursor. This preferred embodiment is an 81stembodiment of the invention, that preferably depends on any of the 58thto 80thembodiments of the invention.

[0150] In a preferred embodiment of the method, the method is for producing a component from the component precursor. This preferred embodiment is an 82ndembodiment of the invention, that preferably depends on any of the 58thto 81stembodiments of the invention.

[0151] In this context, a preferred component is the component of the invention according to any of its embodiments.

[0152] In a preferred embodiment of the method, the component is an opto-electronic component. This preferred embodiment is an 83rdembodiment of the invention, that preferably depends on the 82ndembodiment of the invention.

[0153] An 84thembodiment of the invention is a component obtainable by the method according to any of the 58thto 83rdembodiments of the invention.

[0154] An 85thembodiment of the invention is an electronic device, comprising the component according to any of the 1stto 57th, or 84thembodiments of the invention.

[0155] In a preferred embodiment of the electronic device, the electronic device is a computing device or a memory or both. This preferred embodiment is an 86thembodiment of the invention, that preferably depends on the 85thembodiment of the invention. The computing device may be any type of computing device for any kind of purpose. A preferred computing device is one selected from the group consisting of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), a XPU (X-Processing Unit), and an ASIC (Application Specific Integrated Circuit), or a combination of at least two thereof.

[0156] In a preferred embodiment of the electronic device, wherein the component is designed and arranged for one selected from the group consisting of a., to provide a communication between a first integrated circuit of the electronic device and a further integrated circuit of the electronic device; b.. to provide a communication between a first part of an integrated circuit of the electronic device and a further part of the integrated circuit; and c.. to inject an optical vector in an optical network and / or to read out an optical vector from an optical network; or d.. a combination of at least two thereof.

[0157] This preferred embodiment is an 87thembodiment of the invention, that preferably depends on the 85thor 86thembodiment of the invention.

[0158] Here, communication is an exchange of data, preferably of binary data. In a preferred embodiment according to the above alternative a.., the component is part of the first integrated circuit or of the further integrated circuit. In another preferred embodiment according to the above alternative a.., the component is not part of the first integrated circuit or of the further integrated circuit. In a preferred embodiment according to the above alternative b.., the component is part of the integrated circuit. In a preferred embodiment according to the above alternative c.., the component is part of the optical network. A preferred optical network is designed to perform optical computing. A preferred optical network which is designed to perform optical computing is an optical neuromorphic network or a fast Fourier accelerator or both.

[0159] An 88thembodiment of the invention is a use of the component according to any of the 1stto 57th, or 84thembodiments of the invention for producing an electronic device.

[0160] An 89thembodiment of the invention is a use of the component according to any of the 1stto 57th, or 84thembodiments of the invention for a establishing a communication between a first integrated circuit and a further integrated circuit; b establishing a communication between a first part of an integrated circuit and a further part of the integrated circuit; or c injecting an optical vector in an optical network and / or reading out an optical vector from an optical network.

[0161] Here, communication is an exchange of data, preferably of binary data. In a preferred embodiment according to the above alternative a , the component is part of the first integrated circuit or of the further integrated circuit. In another preferred embodiment according to the above alternative a , the component is not part of the first integrated circuit or of the further integrated circuit. In a preferred embodiment according to the above alternative b , the component is part of the integrated circuit. In a preferred embodiment according to the above alternative c , the component is part of the optical network. A preferred optical network is designed to perform optical computing. A preferred optical network which is designed to perform optical computing is an optical neuromorphic network or a fast Fourier accelerator or both.

[0162] In the 90thto 111thembodiments of the invention, an opto-electronic component should preferably be understood as an opto-electronic component according to the invention, such as an opt-electronic component according to any of the 56thand 57thembodiments of the invention.

[0163] A 90thembodiment of the invention is a first assembly 2000 comprising a. a first sub-assembly 2001, wherein the first sub-assembly 2001 comprises i. a first component 2002, wherein the first component 2002

[0164] A. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0165] B. is more preferably an opto-electronic component, and further preferably a modulator; ii. a second component 2003, wherein the second component 2003

[0166] A. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0167] B. is more preferably an opto-electronic component, and further preferably a photodetector; iii. a first integrated circuit 2004 in electrical contact with the first component 2002, and preferably the second component 2003; iv. preferably a first data storage means 2005 adapted and arranged to be in electrical contact with the first integrated circuit 2004; b. a further sub-assembly 2007, wherein the further sub-assembly 2007 comprises i. a further component 2008, wherein the further component 2008 A. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0168] B. is preferably adapted and arranged to be in optical connection with the first component 2002,

[0169] C. is more preferably an opto-electronic component, and further preferably a photodetector; ii. an even-further component 2009, wherein the even-further component 2009

[0170] A. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0171] B. is preferably adapted and arranged to be in optical connection with the second component 2003,

[0172] C. is more preferably an opto-electronic component, and further preferably a modulator; iii. a further integrated circuit 2010 in electrical contact with the further component 2008, and preferably the even-further component 2009; iv. preferably a further data storage means 2011 adapted and arranged to be in electrical contact with the further integrated circuit 2010; c. a first light emitting means 2006, wherein i. preferably the first component 2002 and the first light emitting means 2006 are adapted and arranged to be in optical connection with each other, ii. preferably the first light emitting means 2006 is arranged in the first sub-assembly 2001; d. preferably a further light emitting means 2012, wherein i. preferably the even-further component 2009 and the further light emitting means 2012 are adapted and arranged to be in optical connection with each other, ii. preferably the further light emitting means 2012 is arranged in the further sub-assembly 2007; wherein the first sub-assembly 2001 and the further sub-assembly 2007 are adapted and arranged to communicate data between said sub-assemblies via an optical signal.

[0173] In a preferred aspect of the 90thembodiment of the invention, the first sub-assembly and the further sub-assembly are adapted and arranged to communicate data between said sub-assemblies via an optical signal, over a distance of at least 1 mm, more preferably at least 2 mm, even more preferably at least 5 mm, and further preferably at least 10 mm. In a preferred aspect of the 90thembodiment of the invention, the first sub-assembly and the further subassembly are adapted and arranged to communicate data between said sub-assemblies via an optical signal, over a distance of at least 10 cm, more preferably at least 30 cm, and further preferably at least 50 cm. In a preferred aspect of the 90thembodiment of the invention, the first component is a modulator and the second component is a photodetector. In a preferred aspect of the 90thembodiment of the invention, the further component is a photo-detector and the even-further component is a modulator.

[0174] In a preferred embodiment of the first assembly, the first assembly is selected from the group consisting of an assembly adapted and arranged for communication, an assembly adapted and arranged for telecommunication, an assembly adapted and arranged for high-performance computing, an assembly adapted and arranged for artificial intelligence (e.g., machine learning), an assembly adapted and arranged for a data centre, a switch (e.g., a network switch), an optical interconnect, a chip. This preferred embodiment is a 91stembodiment of the invention, that preferably depends on the 90thembodiment of the invention.

[0175] A 92ndembodiment of the invention is an optical data communication module 3100 comprising a. a first component 3101, wherein the first component 3101 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a light emitting means 3102 adapted and arranged to be in optical connection with the first component 3101; c. preferably a further component 3103, wherein the further component 3103 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is preferably in optical connection with the first component 3101, iii. is more preferably an opto-electronic component, and further preferably a photodetector; d. an integrated circuit 3104 in electrical contact with the first component 3101, and preferably in electrical contact with the further component 3103.

[0176] In one preferred aspect of the 92ndembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 92ndembodiment, the further component is a modulator, and the first component is a photodetector.

[0177] An 93rdembodiment of the invention is an optical sensing module 2100 comprising: a. a first component 2101, wherein the first component 2101 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is preferably adapted an arranged to modulate first electromagnetic waves directed towards a target area 2102, iii. is more preferably an opto-electronic component, and further preferably a modulator; b. a sensing means 2103 adapted and arranged to detect further electromagnetic waves from the target area 2102, thereby generating an electrical signal, wherein the sensing means preferably comprises a further component, wherein the further component i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a photodetector; c. preferably optics 2104 adapted and arranged to focus the further electromagnetic waves onto the sensing means 2103, and d. preferably an integrated circuit 2105, wherein the integrated circuit is i. preferably in electrical contact with the first component 2101, ii. preferably in electrical contact with the sensing means 2103, iii. preferably adapted and arranged to process the electrical signal generated by the sensing means 2103; e. preferably a light emitting means 2106 in optical connection with the first component 2101.

[0178] A 94thembodiment of the invention is an apparatus 2200 adapted and arranged for a medical application, comprising a. a first component 2201, wherein the first component 2201 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a further component 2202, wherein the further component 2202 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a photodetector; c. preferably a first light emitting means 2203 in optical connection with the first component 2201; d. a first integrated circuit 2204 in electrical contact with the first component 2201, and preferably in electrical contact with the further component 2202, e. preferably a sensing unit 2205, wherein the sensing unit 2205 is adapted and arranged to measure at least one physical property of a body, preferably a mammalian body, wherein the sensing unit 2205 i. preferably comprises an optical data communication module according to the 92ndembodiment of the invention, ii. preferably comprises an optical sensing module according to the 93rdembodiment of the invention, iii. is preferably in data communication, and more preferably in optical connection, with at least one or all of the following:

[0179] A. the first component 2201,

[0180] B. the further component 2202.

[0181] In one preferred aspect of the 94thembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 94thembodiment, the further component is a modulator, and the first component is a photodetector.

[0182] A 95thembodiment of the invention is a vehicle 2300 adapted and arranged for flight, wherein the vehicle 2300 comprises a. a first component 2301, wherein the first component 2301 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a first light emitting means 2302 adapted and arranged to be in optical connection with the first component 2301; c. preferably a further component 2303, wherein the further component 2303 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a photodetector; d. preferably a first integrated circuit 2304 in electrical contact with the first component 2301, and preferably in electrical contact with the further component 2303; e. preferably a propulsion means 2305; f. preferably a means to generate lift 2306; g. preferably a control system 2307 adapted and arranged to control a movement of the vehicle, h. preferably a sensing unit 2308, wherein the sensing unit 2308 i. is preferably adapted and arranged to provide information about surroundings (e.g., a target area) of the vehicle 2300, more preferably spatial information about surroundings of the vehicle 2300, ii. preferably comprises an optical data communication module according to the 92ndembodiment of the invention, iii. preferably comprises an optical sensing module according to the 93rdembodiment of the invention, iv. is preferably in data communication, and more preferably in optical connection, with at least one or all of the following: A. the first component 2301, and

[0183] B. the further component 2303.

[0184] In one preferred aspect of the 95thembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 95thembodiment, the further component is a modulator, and the first component is a photodetector. In a preferred aspect of the 95thembodiment, the first component and the further component are in optical connection.

[0185] In a preferred embodiment of the vehicle adapted and arranged for flight, said vehicle is selected from the group consisting of an airplane, a helicopter, a drone, a rocket, a satellite, a balloon (e.g., a weather balloon, a hot-air balloon) and a missile. This preferred embodiment is a 96thembodiment of the invention, that preferably depends on the 95thembodiment of the invention.

[0186] A 97thembodiment of the invention is a robotic system 2400, comprising: a. a first component 2401, wherein the first component 2401 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a light emitting means 2402 in optical connection with the first component 2401; c. preferably a further component 2403, wherein the further component 2403 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a photodetector; d. preferably a first integrated circuit 2404 in electrical contact with the first component 2401, and preferably the further component 2403; e. a robotic body 2405 adapted and arranged for movement, wherein the robotic body 2405 preferably comprises the first component 2401 and / or the further component 2403; f. a sensing unit 2406, wherein the sensing unit 2406 i. is preferably adapted and arranged to provide spatial information about surroundings (e.g., the target area) of the robotic body 2405, ii. preferably comprises an optical data communication module according to the 92ndembodiment of the invention, iii. preferably comprises an optical sensing module according to the 93rdembodiment of the invention, iv. is preferably in data communication with at least one or all of the following: the first component 2401, the further component 2403; g. a control module 2407 adapted and arranged to control a movement of the robotic body 2405, preferably based on the spatial information provided by the sensing unit 2406, wherein the control module 2407 is preferably in data communication, and more preferably optical connection, with at least one or all of the following: i. the first component 2401, ii. the further component 2403, iii. the first integrated circuit 2404; h. preferably, an external entity 2408 in data communication with the robotic body 2405.

[0187] In one preferred aspect of the 97thembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 97thembodiment, the further component is a modulator, and the first component is a photodetector. In a preferred aspect of the 97thembodiment, the first component and the further component are in optical connection.

[0188] A 98thembodiment of the invention is a second assembly 2500, comprising: a. one or more memory units 2501, preferably one or more optical memory units, adapted and arranged to store instructions and / or data; b. one or more processors 2502, preferably one or more optical processors, that are adapted and arranged i. to be in data communication, and preferably in optical connection, with the one or more memory units 2501, ii. to execute the instructions stored in the one or more memory units 2501 and / or to perform operations using optical signals, c. preferably a data communication module 2503, more preferably an optical data communication module according to the 92ndembodiment of the invention, wherein the data communication module 2503 is adapted and arranged for the communication of data, more preferably optical data, between at least one or all of the following: i. at least one of the one or more memory units 2501 and at least one of the one or more processors 2502, ii. between at least two of the memory units 2501, iii. between at least two of the processors 2502; d. at least one component 2504, wherein the at least one component 2504 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector; iii. is preferably arranged in at least one or all of the following: the at least one memory unit 2501, the at least one processer 2502, the data communication module 2503.

[0189] In a preferred aspect of the 98thembodiment, the second assembly comprises at least two components, more preferably at least two opto-electronic devices. In this aspect, it is preferred that the at least two opto-electronic devices are at least one modulator and at least one photodetector.

[0190] A 99thembodiment of the invention is a third assembly 2600 comprising: a. a homomorphic operation module 2601 that is adapted and arranged for performing homomorphic operations on encrypted optical data to obtain modified encrypted optical data, b. preferably a photonic encryption module 2602, wherein the photonic encryption module 2602 i. is in optical connection with the homomorphic operation module 2601, ii. is adapted and arranged for encrypting optical data, preferably using an optical encoding scheme, to obtain the encrypted optical data; c. preferably a photonic decryption module 2603, wherein the photonic decryption module i. is in optical connection with the homomorphic operation module 2601, the photonic encryption module 2602, or both, ii. is adapted and arranged for decrypting the modified encrypted optical data, preferably using an optical decoding scheme; d. at least one component 2604, wherein the at least one component 2604 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector; iii. is preferably arranged in at least one or all of the following: the homomorphic operation module 2601, the photonic encryption module 2602, the photonic decryption module 2603; e. preferably at least one light emitting means 2606 that is in optical connection with at least one or all of the following; i. the homomorphic operation module 2601, ii. the photonic encryption module 2602, iii. the photonic decryption module 2603.

[0191] In a preferred aspect of the 99thembodiment, the third assembly comprises at least two components, more preferably at least two opto-electronic devices. In this aspect, it is preferred that the at least two opto-electronic devices are at least one modulator and at least one photodetector. A 100thembodiment of the invention is an optical connection module 2700, comprising: a. a first component 2701, wherein the first component 2701 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a further component 2702, wherein the further component 2702 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is preferably in optical connection with the first component 2701, iii. is more preferably an opto-electronic component, and further preferably a photodetector c. preferably at least one waveguide 2703 in optical connection with the first component 2701, the further component 2702, or both; d. preferably a light emitting means 2704 in optical connection with the first component 2701; e. preferably at least one integrated circuit 2705 in electrical contact with the first component 2701, the further component 2702, or both.

[0192] In one preferred aspect of the 100thembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 100thembodiment, the further component is a modulator, and the first component is a photodetector.

[0193] In a preferred embodiment of the optical connection module, the optical connection module is selected from the group consisting of an optical interconnect, an optical transmitter, an optical receiver, an optical transceiver, and an optical switch. This preferred embodiment is a 101stembodiment of the invention, that preferably depends on the 100thembodiment of the invention.

[0194] A 102ndembodiment of the invention is a first transportation means 2800, preferably adapted and arranged for autonomous travel, comprising: a. a first component 2801, wherein the first component 2801 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a first light emitting 2812 means adapted and arranged to be in optical connection with the first component 2801; c. preferably a further component 2802, wherein the further component 2802 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a photodetector; d. preferably a first integrated circuit 2811 in electrical contact with the first component 2801, the further component 2802, or both; e. a sensing unit 2803, wherein the sensing unit 2803 i. is preferably adapted and arranged to provide spatial information about surroundings (e.g., a target area) of the first transportation means 2800, ii. preferably comprises a data communication module, more preferably an optical data communication module according to the 92ndembodiment of the invention, iii. preferably comprises an optical sensing module according to the 93rdembodiment of the invention, iv. is preferably in data communication, and more preferably in optical connection, with at least one or all of the following:

[0195] A. the first component 2801, and

[0196] B. the further component 2802; f. a processing module 2804 that i. comprises a perception sub-module 2805 adapted and arranged to analyse and / or process the spatial information from the sensing unit 2803 to provide perception data on a presence and / or a classification of patterns and / or items in the target area, ii. comprises a generation sub-module 2806 adapted and arranged to process the perception data, and to preferably generate a recommendation, a control instruction, or both, iii. is preferably in data communication, and more preferably in optical connection, with at least one or all of the following:

[0197] A. the first component 2801, and

[0198] B. the further component 2802; g. preferably a human-machine interface 2807 adapted and arranged to provide feedback to a user based on the recommendation, the control instruction, or both; h. preferably a control unit 2808 adapted and arranged to execute the recommendation, the control instruction, or both; i. a steering means 2809 adapted and arranged to steer the first transportation means 2800, wherein the control unit 2808 is preferably adapted and arranged to control the steering means; j. a propulsion means 2810 adapted and arranged to provide propulsion to the first transportation means 2800, wherein the control unit 2808 is preferably adapted and arranged to control the propulsion means 2810.

[0199] In one preferred aspect of the 102ndembodiment, the first component is a modulator, and the further component is a photodetector. In another preferred aspect of the 102ndembodiment, the further component is a modulator, and the first component is a photodetector. In a preferred aspect of the 102ndembodiment, the first component and the further component are in optical connection.

[0200] A 103rdembodiment of the invention is a further transportation means 2900 comprising: a. a first component 2901, wherein the first component 2901 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator; b. preferably a further component 2902, wherein the further component 2902 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is preferably in optical connection with the first component 2901, iii. is more preferably an opto-electronic component, and further preferably a photodetector; c. a steering means 2903 adapted and arranged to steer the further transportation means 2900; d. a propulsion means 2904 adapted and arranged to provide propulsion to the further transportation means 2900.

[0201] In one preferred aspect of the 103rdembodiment, the first component is a modulator and the further component is a photodetector. In another preferred aspect of the 103rdembodiment, the further component is a modulator and the first component is a photodetector.

[0202] A 104thembodiment of the invention is a fourth assembly 3000, comprising: a. one or more memory units 3001 adapted and arranged to store instructions and / or data; b. one or more processors 3002 that are adapted and arranged i. to be in data communication with the one or more memory units 3001, ii. to execute the instructions stored in the one or more memory units 3001 and / or to perform operations; c. at least one component 3003, wherein the at least one component 3003 i. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention, ii. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector; wherein the fourth assembly is preferably adapted and arranged for at least one or all of the following: artificial intelligence, machine learning, graphics rendering, large-scale visualisation, gaming, high-frequency trading, video streaming, audio recognition, image recognition, object recognition, virtual reality, molecular simulation, scientific simulations (e.g., the modelling of weather patterns and / or climate, the modelling of star formation), the solving of equations, data mining, cloud-based applications.

[0203] In a preferred aspect of the 104thembodiment, the fourth assembly comprises at least two components, more preferably at least two opto-electronic devices. In this aspect, it is preferred that the at least two opto-electronic devices are at least one modulator and at least one photodetector.

[0204] A 105thembodiment of the invention is a use of the first assembly according to the invention, preferably according to the 90thembodiment of the invention, for at least one or all of the following: communication, telecommunication, high-performance computing, for use in a data centre, a switch (e.g., a network switch), an optical interconnect, a chip.

[0205] A 106thembodiment of the invention is a use of the first assembly according to the invention, preferably according to the 90thembodiment of the invention, in at least one or all of the following: artificial intelligence applications and / or machine learning applications, an apparatus adapted and arranged for a medical application, a vehicle adapted and arranged for flight, a robotic system, an assembly adapted and arranged for optical computing, a homomorphic operation module, a photonic encryption module, photonic decryption module, an optical connection module, a transportation means.

[0206] A 107thembodiment of the invention is a use of a fourth assembly according to the invention, preferably according to the 104thembodiment of the invention, for at least one or all of the following: artificial intelligence, machine learning, graphics rendering, large-scale visualisation, gaming, high-frequency trading, video streaming, audio recognition, image recognition, object recognition, virtual reality, molecular simulation, scientific simulations (e.g., the modelling of weather patterns and / or climate, the modelling of star formation), the solving of equations, data mining, cloud-based applications.

[0207] A 108thembodiment of the invention is a use of a component for at least one or all of the following: a. communication, preferably in an assembly adapted and arranged for communication; b. telecommunication, preferably in an assembly adapted and arranged for telecommunication; c. high-performance computing, preferably in an assembly adapted and arranged for high performance computing; d. a data centre; e. a switch; f. an optical interconnect; g. a computer chip; h. a vehicle adapted and arranged for flight; i. an apparatus adapted and arranged for a medical application; j. a module adapted and arranged for optical sensing; k. a module adapted and arranged for optical data communication; l. a robotic system; m. optical computing, preferably an assembly adapted and arranged for optical computing; n. at least one or all of a homomorphic operation module, a photonic encryption module, photonic decryption module; o. an optical connection module; p. a transportation means; q. an assembly adapted and arranged for artificial intelligence and / or machine learning; wherein the component

[0208] I. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0209] II. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector.

[0210] In an aspect of the 108thembodiment of the invention, all possible combinations of the features a. to q. are preferred aspects of the invention.

[0211] A 109thembodiment of the invention is a use of a component for at least one or all of the following: a. an apparatus adapted and arranged for consumer applications; b. an apparatus adapted and arranged for laser and / or light detection and ranging; c. an apparatus adapted and arranged for optical spectroscopy; d. a system adapted and arranged for high performance computing, preferably for memory intensive applications, big data, or search engines; e. an apparatus adapted and arranged for virtual reality, augmented reality, gaming; f. an apparatus adapted and arranged for streaming and / or video broadcasting; g. a system adapted and arranged for trading, brokerage, and / or financing; h. a system adapted and arranged for wireless communication; i. an apparatus adapted and arranged for biometric searches, personal data management, or patient data management; j . an apparatus adapted and arranged for climate prediction, weather forecast, and / or scientific simulations (e.g., the modelling of star formation); k. an apparatus adapted and arranged for molecular simulation, drug discovery, and / or gene sequencing; and l. an apparatus adapted and arranged for an enterprise cloud; wherein the component

[0212] I. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0213] II. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector.

[0214] In an aspect of the 109thembodiment of the invention, all possible combinations of the features a. to 1. are preferred aspects of the invention.

[0215] A 110thembodiment of the invention is an item comprising a component, wherein the item is selected from a group consisting of: a. an assembly adapted and arranged for communication; b. an assembly adapted and arranged for telecommunication; c. an assembly adapted and arranged for high performance computing; d. a data centre; e. a switch; f. an optical interconnect; g. a computer chip; h. a vehicle adapted and arranged for flight; i. an apparatus adapted and arranged for a medical application; j. a module adapted and arranged for optical sensing; k. a module adapted and arranged for optical data communication; l. a robotic system; m. an assembly adapted and arranged for optical computing; n. at least one or all of a homomorphic operation module, a photonic encryption module, photonic decryption module; o. an optical connection module; p. a transportation means; q. an assembly adapted and arranged for artificial intelligence and / or machine learning; wherein the component

[0216] I. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0217] II. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector.

[0218] In an aspect of the 110thembodiment of the invention, all possible combinations of the features a. to q. are preferred aspects of the invention. A 111thembodiment of the invention is an item comprising a component, wherein the item is selected from a group consisting of: a. an apparatus adapted and arranged for consumer applications; b. an apparatus adapted and arranged for laser and / or light detection and ranging; c. an apparatus adapted and arranged for optical spectroscopy; d. a system adapted and arranged for high performance computing, preferably for memory intensive applications, big data, or search engines; e. an apparatus adapted and arranged for virtual reality, augmented reality, gaming; f. an apparatus adapted and arranged for streaming and / or video broadcasting; g. a system adapted and arranged for trading, brokerage, and / or financing; h. a system adapted and arranged for wireless communication; i. an apparatus adapted and arranged for biometric searches, personal data management, or patient data management; j . an apparatus adapted and arranged for climate prediction, weather forecast, and / or scientific simulations (e.g., the modelling of star formation); k. an apparatus adapted and arranged for molecular simulation, drug discovery, and / or gene sequencing; and l. an apparatus adapted and arranged for an enterprise cloud; wherein the component

[0219] I. is a component according to the invention, preferably a component according to any of the 1stto 57th, or 84thembodiments of the invention,

[0220] II. is more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector.

[0221] In an aspect of the 111thembodiment of the invention, all possible combinations of the features a. to 1. are preferred aspects of the invention.

[0222] A 112thembodiment of the invention is a fifth assembly comprising a component according to any of the 1stto 57th, or 84thembodiments of the invention, more preferably an opto-electronic component, and further preferably a modulator and / or a photodetector, wherein the fifth assembly further comprises a front-end-of-line layer, and wherein the component is adapted and arranged such that either the first side of the component or the further side of the component faces the front-end-of-line layer.

[0223] In a preferred aspect of the 112thembodiment, the further side of the component faces the front-end-of-line layer. In a preferred aspect of the 112thembodiment, the first electrical connection does not extend to the further side of the component. In a preferred aspect of the 112thembodiment, a further electrical connection does not extend to the further side of the component.

[0224] In one or more preferred aspects of the invention, if at least one or all of the following comprises an integrated circuit and a component according to the invention, then the component is preferably adapted and arranged such that a further side of the component faces the integrated circuit: a first assembly, a first sub-assembly, a further subassembly, a second assembly adapted and arranged for optical computing, a third assembly, a fourth assembly, a fifth assembly, an optical sensing module, an apparatus adapted and arranged for a medical application, a vehicle adapted and arranged for flight, a robotic system, an optical connection module, a first transportation means, a further transportation means, an optical data communication module. In this / these aspect(s), it is preferred that a first electrical connection of the component does not extend to the further side of the component. In this / these aspect(s), it is preferred that a further electrical connection of the component does not extend to the further side of the component.

[0225] Features described as preferred in one category of the invention, for example according to the composite, are analogously preferred in an embodiment of the other categories according to the invention, such as the method and the uses. Throughout this document, disclosures of ranges should preferably be understood to include both end points of the range. Furthermore, each disclosure of a range in the document should preferably be understood as also disclosing preferred sub-ranges in which one end point is excluded or both end points are excluded. For example, a disclosure of a range from 200 nm to 800 nm is to be understood as disclosing a range that includes both of the end points 200 nm and 800 nm. Furthermore, it is to be understood as also disclosing a range that includes the end point 200 nm but excludes the end point 800 nm, a range that excludes the end point 200 nm but includes the end point 800 nm, and a range that excludes both end points 200 nm and 800 nm.

[0226] Layer Sequence

[0227] The layers of the layer sequence have been joined to one another in a planar manner, preferably over their entire surfaces. Two layers are joined together when their adhesion to each other exceeds Van der Waals forces of attraction. Due to their specific nature, the latter definition does not apply to layers of graphene. Preferably, layers joined to one another are one selected from the group consisting of joined with one another by coating. Layers joined to one another by coating are preferably joined to one another by vapour deposition coating or atomic layer deposition or both. A preferred form of vapour deposition coating is physical vapour deposition (PVD) or chemical vapour deposition coating (CVD). A preferred form of CVD is plasma enhanced chemical vapour deposition (PECVD). Unless stated otherwise, in a layer sequence, the layers may follow one another indirectly, i.e., with one or at least two intermediate layers, or directly, i.e., with no intermediate layer. This is the case especially in the form of words in which one layer is superimposed to another layer. A form of words in which a layer sequence comprises enumerated layers means that at least the layers specified are present in the sequence specified. This form of words does not necessarily mean that these layers follow on directly from one another. In a preferred embodiment, superimposed layers adjoin each other. A form of words in which two layers adjoin one another means that these two layers follow on from one another directly and hence with no intermediate layer. Generally, each layer of the layer sequence may be a full and continuous layer of the layer sequence or a partial or discontinuous layer. A full layer of the layer sequence, laterally extends over the full area of the layer sequence, as opposed to a partial layer which has a width or length or both which is smaller than the width or length or both of the overall layer sequence. A continuous layer does not have any gaps, except for gaps, in particular through-holes, for electrical connections. Opposed to this, a discontinuous layer may be present over the full area of the layer sequence, however, with gaps, which are not filled with electrical connections. In particular, a discontinuous layer may be present in a patterned or structured form. It is preferred that one selected from the group consisting of the dielectric layer A, the dielectric layer B, the dielectric layer C, and the substrate layer, or a combination of at least two thereof, particularly preferable each of these, is a full and continuous layer of the layer sequence. Additionally or alternatively preferred, the first electrical conductor layer or the further electrical conductor layer or each of both is a partial layer. In a preferred embodiment, the optical element layer is a full and continuous layer of the layer sequence. In another embodiment, the optical element layer is a partial layer, which is preferably at least partially embedded in the dielectric layer C. Preferably, one selected from the group consisting of the dielectric layer A, the dielectric layer B, the dielectric layer C, the optical element layer, the first electrical conductor layer, the further electrical conductor layer, and the substrate layer, or a combination of at least two thereof, preferably each of the preceding, is a plane-parallel layer. Preferably, at least two selected from the group consisting of the dielectric layer A, the dielectric layer B, the dielectric layer C, the optical element layer, the first electrical conductor layer, the further electrical conductor layer, and the substrate layer, preferably each combination two of the preceding, are plane-parallel to one another.

[0228] First Direction

[0229] The first direction runs from the first side to the further side of the component or component precursor, respectively. The first direction is the direction in which the layers of the layer sequence follow one another. The first direction is preferably perpendicular to a layer plane of the dielectric layer A, or a layer plane of the dielectric layer B, or to each of both. The first direction of the component precursor is the same as the first direction of the component produced from this component precursor.

[0230] Dielectric Layers

[0231] Any material and layer which the skilled person deems suitable in the context of the invention comes into consideration for the dielectric layers A, B and C. Each dielectric layer comprises, preferably consists of, a dielectric. Each dielectric layer comprises a dielectric in a proportion of at least 50 wt.-%, more preferably at least 60 wt-%, more preferably at least 70 wt.-%, more preferably at least 80 wt-%, even more preferably at least 90 wt.-%, in each case based on the weight of the respective dielectric layer. It follows that each dielectric layer is an electrical insulator that can be polarised by an applied electric field. The dielectric layer A consists of a different material than the dielectric layer B. Preferably, the dielectric layers A and C consist of the same material. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof is preferably obtainable by vapour deposition, preferably by PVD or C VD or both. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof is preferably not a polymer layer. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof preferably has a total proportion of polymers of less than 50 wt.-%, more preferably less than 40 wt-%, more preferably less than 30 wt.-%, more preferably less than 20 wt-%, more preferably less than 10 wt-%, even preferably less than 5 wt- %, most preferably of 0 wt-%, in each case based on the weight of the respective dielectric layer. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof is preferably not an organic layer. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof preferably has a total proportion of organic materials of less than 50 wt-%, more preferably less than 40 wt-%, more preferably less than 30 wt-%, more preferably less than 20 wt-%, more preferably less than 10 wt-%, even preferably less than 5 wt-%, most preferably of 0 wt-%, in each case based on the weight of the respective dielectric layer. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof is preferably an inorganic layer. One selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof preferably comprises one or more inorganic materials in sum in proportion of at least 50 wt-%, more preferably at least 60 wt-%, more preferably at least 70 wt-%, more preferably at least 80 wt-%, even more preferably at least 90 wt- %, in each case based on the weight of the respective dielectric layer. Preferably, one selected from the group consisting of the dielectric layer A, the dielectric layer B, and the dielectric layer C, or a combination of at least two thereof consists of one or more, preferably one, inorganic material(s). Preferably, the dielectric layer A is hardmask. Additionally or alternatively preferred, the dielectric layer B is hardmask. Preferably, the dielectric layer A qualifies as a hardmask for the further etching method. A preferred dielectric layer A is a hardmask for the further etching method. Additionally or alternatively preferred, the dielectric layer B qualifies as a hardmask for the first etching method. A preferred dielectric layer B is a hardmask for the first etching method.

[0232] Optical Element Layer

[0233] Each optical element in the form of a layer which the skilled person deems suitable in the context of the invention comes into consideration for the optical element layer. The optical element layer is preferably adapted and arranged for an opto-electronic interaction with the first electrical conductor layer or the further electrical conductor layer or both. This means that an electrical current or electrical charge in the first electrical conductor layer or in the further electrical conductor layer or both can modify electromagnetic waves that are in the optical element layer, in particular that propagate through the optical element layer, or are in contact with the optical element layer, or electromagnetic waves that are in the optical element layer, in particular that propagate through the optical element layer, or are in contact with the optical element layer can modify an electrical current or electrical charge in the first electrical conductor layer or in the further electrical conductor layer or both, or both.

[0234] Herein, an optical element is an element that is arranged and designed to manipulate electromagnetic waves. A preferred optical element layer is one selected from the group consisting of a transmission optic, a conversion optic, and a reflection optic, or a combination of at least two of them. A transmission optic is an optic through which electromagnetic waves pass in order to manipulate them. A preferred transmission optic is one selected from the group consisting if a waveguide, a lens, and transmission grating, or a combination of at least two thereof. Here, a waveguide is particularly preferred. A conversion optic is an optic arranged and configured to alter a wavelength of electromagnetic radiation. This may, for example, serve to adjust a colour of light. A reflective optic is an optic that, in order to manipulate the electromagnetic waves, in particular a propagation direction of the electromagnetic waves, reflects electromagnetic waves. A preferred reflective optic is a mirror or a reflection grating.

[0235] Waveguide

[0236] A waveguide is an element which manipulates a direction of propagation of electromagnetic waves in order to guide the electromagnetic waves and thereby propagate the electromagnetic waves with reduced loss of energy, as compared to the decrease of intensity according to the inverse square law which applies to the expansion of electromagnetic waves into three-dimensional space, by restricting the transmission of energy to one direction. A preferred waveguide is one selected from the group consisting of a strip waveguide, a rib waveguide, a slot waveguide, a buried waveguide, and a diffused waveguide, or a combination of at least two thereof. Additionally or alternatively preferred, the waveguide comprises at least one or all of the following: silicon, oxygen, aluminium, iridium, tantalum, titanium, nitrogen, lithium, niobium, indium, phosphorus, gallium, arsenic, barium, a chalcogenide, at least one polymer, a resin, and a combination of at least two thereof. Examples of combinations of the aforementioned materials include titanium dioxide, aluminium nitride, tantalum pentoxide, silicon nitride, aluminium oxide, silicon oxynitride, lithium niobate, silica, indium phosphide, gallium arsenide, indium gallium arsenide, barium titanate, and aluminium gallium arsenide. A preferred chalcogenide is a dichalcogenide, more preferably a transition metal dichalcogenide. A preferred waveguide adapted and arranged for the propagation of electromagnetic waves, more preferably electromagnetic waves that have wavelengths in the range from 1000 to 2700 nm, even more preferably from 1100 to 2600 nm, and further preferably from 1200 to 2500 nm. Additionally or alternatively preferred, the waveguide is adapted and arranged for the propagation of electromagnetic waves that have wavelengths in at least one or all of the following ranges: 1260 nm to 1360 nm (also known as the Original Band or O-Band), 1360 nm to 1460 nm (also known as the Extend Band or E-Band), 1460 nm to 1530 nm (also known as the Short Band or S- Band), 1530 nm to 1565 nm (also known as the Conventional Band or C-Band), and 1565 nm to 1625 nm (also known as the Long Band or L-Band). In an aspect of the invention, it is particularly preferred that the waveguide is adapted and arranged for the propagation of electromagnetic waves that have wavelengths in the O-band, the C- band, or both. Where it is disclosed that the waveguide is adapted and arranged for the propagation of electromagnetic waves that have wavelengths in a given wavelength range, this should not be understood to mean that the waveguide is necessarily only adapted for the propagation of electromagnetic waves in that given wavelength range. Rather, it should preferably be understood to mean that the waveguide is at least adapted and arranged for the propagation of electromagnetic waves in the given wavelength range.

[0237] Additionally or alternatively preferred, the component of the invention comprises a cladding to the waveguide. Preferably, the cladding at least partially surrounds the waveguide. Preferably, the cladding surrounds the waveguide over the full length of the waveguide, but surrounds the waveguide over at least part of the waveguide’s perimeter, Preferably, the cladding surrounds more than 50 % of the perimeter of the waveguide. Additionally or alternatively preferred, the cladding surrounds the perimeter of the waveguide, except for a side of the waveguide which faces the first side of the component or component precursor. The cladding has a refractive index which is less than the refractive index of the waveguide. Preferably, the dielectric layer C is the cladding. In this context, the waveguide is preferably at least partially embedded in the dielectric layer C.

[0238] Electrical Conductor Layers

[0239] Each electrical conductor in the form of a layer which the skilled person deems suitable in the context of the invention comes into consideration for the first and further electrical conductor layers. Thus, each electrical conductor is a layer which is electrically conductive. Preferably, the first and further electrical conductor layers consist of the same material. Additionally or alternatively preferred, the first and further electrical conductor layers have the same layer thickness. Additionally or alternatively preferred, the first and further electrical conductor layers are plane- parallel to one another. A preferred electrical conductor layer consists of graphene. This preference applies to each single one of the electrical conductor layers taught herein, and also to each combination of the electrical conductor layers taught herein. Graphene is an allotrope of carbon consisting of at least 1 layer of carbon atoms which are arranged in a hexagonal lattice structure. Thus, a preferred electrical conductor layer which consists of graphene may consist of a monolayer of carbon atoms or of multiple layers of carbon atoms stacked upon one another without forming graphite. The presence of graphene is determined by Raman spectroscopy as described below in the “Composition” test method. Electrical Connection

[0240] Each of the first and further electrical connections is an electrically conductive path which was preferably obtained by filling a cavity, preferably a through-hole, with an electrically conductive material or by coating walls of the cavity with an electrically conductive material or both. Preferably, a length of the first electrical connection or of the further electrical connection or each of both is at least in sections, preferably entirely, about parallel to the first direction. A preferred electrical connection is referred to as a via in the technical field of the invention. A via is a through-hole that extends through two or more adjacent layers of the layer sequence, wherein the through-hole is at least partially filled or at least partially coated or both with an electrically conductive material, preferably a metal, that establishes an electrical connection through the two or more adjacent layers. A preferred electrical connection is circular in cross-section.

[0241] Substrate

[0242] For the substrate layer of the component and its precursor each substrate which the skilled person deems suitable comes into consideration. A preferred substrate layer is one selected from the group consisting of a glass plate, a polymer plate, a polymer sheet and a wafer.

[0243] Opto-Electronic Component

[0244] The component of the invention preferably is an opto-electronic component, more preferably a graphene -based opto-electronic component. An opto-electronic component is an electronic component which is designed and adapted for modification of electromagnetic waves by an electrical current or an electrical charge, or for modification of an electrical current or an electrical charge by electromagnetic waves. An example of a modification of electromagnetic waves is a modulation of the electromagnetic waves. Modification of an electromagnetic wave should preferably be understood as the modification of one or more properties of an electromagnetic wave. Examples of the properties include amplitude, phase, frequency, and polarisation. In an aspect of the invention, it is preferred that an amplitude is modified. Examples of modifying at least one property of an electromagnetic wave is a modulation of the electromagnetic wave, an at least partial absorption of the electromagnetic wave, or both. A preferred modulation of an electromagnetic wave is a modulation of an amplitude of the electromagnetic wave. Examples of preferred opto-electronic components include modulators, photodetectors (also spelled photo-detec- tors), and interferometers. More preferred examples are modulators and photodetectors. A preferred modulator at least partially converts an electrical signal to an optical signal. A preferred photodetector at least partially converts an optical signal to an electrical signal.

[0245] A modulator preferably modifies an electromagnetic wave by modulating the electromagnetic wave, more preferably by modulating an amplitude of the electromagnetic wave. It is preferred that the modulator modulates the electromagnetic wave for the sending of data, more preferably by imposing a signal on the electromagnetic wave. A photodetector preferably modifies an electromagnetic wave by at least partially absorbing the electromagnetic wave. The at least partial absorption of the electromagnetic wave preferably leads to a decrease in the amplitude of the electromagnetic wave. It is preferred that the photodetector at least partially absorbs the electromagnetic wave for the receiving of data. For example, if a modulator and a photodetector are in optical connection, the modulator sends data and the photodetector receives the data, e.g., data is transmitted between the modulator and photodetector.

[0246] An opto-electronic component preferably has a height that is at least 10 nm, more preferably at least 100 nm, and further preferably at least 200 nm. For example, an opto-electronic component may have a height in the range from 300 to 400 nm. A preferred opto-electronic component has a height that is equal to or less than 50 pm, preferably equal to or less than 20 pm, and more preferably equal to or less than 10 pm.

[0247] A preferred opto-electronic component comprises at least one layer of graphene. Opto-electronic component (such as modulators and photodetectors) comprising graphene are well-known to the skilled person.

[0248] Hardmask

[0249] A hardmask is a layer of material generally known in semiconductor processing as an etch mask which is used instead of a polymer or other organic soft resist material, i.e., instead of a photoresist. Usually, in the prior art hardmasks are used only when the material to be etched is itself an organic polymer. In this case, the hardmask is usually removed after it has served its purpose as a mask for etching.

[0250] Photolitho graphy

[0251] Photolithography is the most common method for semiconductor fabrication of integrated circuits. In integrated circuit manufacturing, photolithography is a general term used for an etching technique which involves light to produce an etch mask on the material layer to be etched. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical, i.e., to a photoresist layer, coated on the material layer to be etched. The photoresist either breaks down or hardens where it is exposed to the light. The etch mask is then created by removing the softer parts of the coating with appropriate solvents, also known in this case as developers. A photoresist (also known simply as a resist) is thus a photosensitive material which may be used to form a patterned coating on a surface. Photoresists typically comprise a resin, a sensitizer and a vehicle or solvent. The resin serves as a binder which provides physical properties such as adhesion and chemical resistance. The sensitizer has a photoactive compound which renders the photoresists photosensitive. The vehicle or solvent keeps the resist liquid.

[0252] Etching and Etchant

[0253] The etchant of an etching method is the atom, radical, molecule or ion which directly interacts with the material surface to remove part of the material by chemical interaction or physical interaction or both. The of an etching method is the atom, radical, molecule or ion which directly interacts with the material surface to remove part of the material by chemical interaction or physical interaction or both. A preferred chemical interaction is a chemical reaction. A preferred physical interaction is sputtering. If herein reference is made to an etchant by the symbol of a chemical element, the reference encompasses atoms, radicals, molecules and ions of the element.

[0254] A wet etching method is an etching method in which the etchant is provided in liquid form or as part of a liquid composition which includes the etchant. The liquid etchant or liquid composition, which includes the etchant, is applied to the target surface by, preferably by spin-coating. A dry etching method is an etching method in which the etchant is provided in the form of a gas or plasma, or as part of a gas or plasma. In each case, the gas or plasma may be created from a liquid.

[0255] Overlap

[0256] Regions of two or more layers overlap one another in a view in a certain direction if these regions follow one after the other congruently in the certain direction.

[0257] Partially Embedded

[0258] A layer which is at least partially embedded in another layer is a partial layer of the layer sequence. A layer which is at least partially embedded in another layer is preferably surrounded by the other layer over its full length. Additionally or alternatively preferred more than 50 % of a perimeter of the layer are surrounded by the other layer. Preferably, the other layer surrounds the perimeter of the layer, except for a side of the layer which faces the first side of the component or component precursor. Preferably, the layer and the other layer together form a combined layer, wherein a surface of the combined layer which faces the first side of the component or component precursor is a combination of surfaces of the layer and of the other layer, each of which each faces the first side.

[0259] Distances

[0260] A distance between two elements is the length of the shortest straight line which connects the two elements.

[0261] Method steps

[0262] The method steps of the method according to the invention are carried out in the order of their symbols. In principle, method steps with immediately successive symbols can be carried out one after the other, at the same time or overlapping in time. If multiple operations are performed in the same method step, these operations may be conducted in any order, at the same time or overlapping in time as long as not given or technically required otherwise.

[0263] Chemical Elements

[0264] Wherever herein the abbreviation of a chemical elements is used without further specification this includes references to atoms, molecules and ions of this elements as such as well as the presence of atoms ore ions of this element in a chemical compound. Electrical components

[0265] An electrical component may comprise one or more further electrical components. In turn, these one or more further electrical components may comprise one or more other electrical components. For example, a sensor may comprise a chip, that in turn comprises a transistor.

[0266] Examples of an electrical component include a semiconductor component (e.g., a transistor, a graphene based field effect transistor, a radio frequency graphene based field effect transistor); an opto-electronic component (e.g., a modulator, a photo-detector, a broad spectrum photo-detector, a single photon photo-detectors); a heating device (e.g., a graphene heater); a measuring device (e.g., a device comprising a hall bar); a sensor (e.g., a pressure sensor, a gas sensor, a magnetic sensor, an ion sensor); an accelerometer; a detector adapted and arranged for the detection of viruses, antibodies, biomarkers, biomolecules, and / or a combination of at least two thereof; quantum dots; a microwave circuit; an antenna (e.g., a THz antenna); a chip; a die; a light emitting means (e.g., a laser); a combination of at least two thereof.

[0267] Optical connection

[0268] Two constituents that are in optical connection should preferably be understood to mean that said two constituents are adapted and arranged for a propagation (e.g., transmission) of electromagnetic waves between said two constituents. Here the two constituents can be, e.g., a light emitting means and an opto-electronic component, two components, two opto-electronic components (e.g., a modulator and a photodetector). Two opto-electronic components that are in optical connection are preferably adapted and arranged for the communication (e.g., transfer) of data between said two opto-electronic components. A modulator that is adapted and arranged to be in optical connection with a photodetector is preferably adapted and arranged to communicate data via an optical signal between the modulator and the photodetector, more preferably to transmit data via an optical signal from the modulator to the photodetector.

[0269] Two constituents that are in optical connection are not required to be in, e.g., the same assembly, the same subassembly, the same apparatus, the same system, but can be in e.g., different assemblies, different sub-assemblies, different apparatuses, different systems.

[0270] Electrical contact

[0271] Two constituents that are in electrical contact should preferably be understood to mean that an electrical current can flow between the two constituents. Here the two constituents can be, e.g., an integrated circuit and an electrical component, an integrated circuit and an opto-electronic component, an integrated circuit and a sensing means. Electrical contact is preferably adapted and arranged for at least one or all of the following: data communication, to provide power to a component. Integrated circuit

[0272] Examples of a preferred integrated circuit include the following: a processing unit, a memory unit, an applicationspecific integrated circuit, a microcontroller, a field-programmable gate array, and a system-on-chip.

[0273] A processing unit is preferably adapted and arranged to execute instructions of a computer program. Examples of these instructions include arithmetic, logic, controlling, and input / output operations. A memory unit is preferably adapted and arranged to store instructions of a computer program.

[0274] Examples of a processing unit include a central processing unit (CPU), a graphics processing unit (GPU), an X- processing unit (XPU), a tensor processing unit (TPU), a neuromorphic processing unit (NPU). Examples of a memory unit include random access memory (RAM), static RAM (SRAM), synchronous dynamic RAM (SDRAM), double data rate SDRAM (DDR SDRAM), graphics DDR SDRAM (GDDR SDRAM), flash memoiy, magnetoresistive RAM (MRAM), magnetic tunnel junction MRAM, and spin-orbit torque MRAM.

[0275] Examples of a data storage means is a hard drive and a flash drive.

[0276] Data communication

[0277] Two constituents that are in data communication should preferably be understood to mean that data can be communicated between said two constituents. Here the two constituents can be, e.g., two components, two opto-electronic components, an integrated circuit and an opto-electronic component, a sensing means and an opto-electronic component, an integrated circuit and a sensing means. The data may be communicated using electrical signals, optical signals, or both. Data that is communicated between a first constituent and a further constituent includes at least one or all of the following: A.] a transmission (e.g., transfer) of data from the first constituent to the further constituent, B.] a transmission (e.g., transfer) of data from the further constituent to the first constituent, both A.] and B.]. For example, the first and further constituents are a modulator and a photodetector, respectively.

[0278] An integrated circuit that is in electrical contact with an electrical component is preferably in data communication with the electrical component. An integrated circuit that is in electrical contact with an opto-electronic component is preferably in data communication with the opto-electronic component. An integrated circuit that is in electrical contact with a data storage means is preferably in data communication with the data storage means. An integrated circuit that is in electrical contact with a sensing means is preferably in data communication with the sensing means.

[0279] Light emitting means

[0280] A light emitting means is adapted and arranged to emit electromagnetic waves. For example, a light emitting means is adapted and arranged to emit radio waves, microwaves, or optical waves. A preferred light emitting means is adapted and arranged to facilitate at least one or all of the following: communication, sensing, imaging. An example of a light emitting means is a laser. Light and photonics

[0281] The terms “optical” and “light”, as used herein, should preferably be understood as electromagnetic radiation, more preferably electromagnetic radiation in any of the visible, infrared, and ultraviolet spectral ranges. An example of an optical signal is a signal and / or data that is communicated using electromagnetic waves. Optical data should preferably be understood as data that is communicated using electromagnetic waves.

[0282] Photonics should preferably be understood to include at least one or all of the following: generation, detection, manipulation, emission, transmission, modulation, signal processing, switching, amplification, and sensing of electromagnetic waves.

[0283] Artificial intelligence and machine learning

[0284] Artificial intelligence (Al) should preferably be understood to include at least one or all of the following: perceiving, synthesizing, inferring, predicting and / or generating information using computerised tools and / or techniques (e.g., machine learning models). Machine learning includes supervised learning (e.g., linear regression, decision trees, support vector machines), unsupervised learning (e.g., hierarchical clustering, k-means clustering), and reinforced learning. Machine learning also includes deep learning, such as convolutional neural networks and recurrent neural networks.

[0285] Sensing means

[0286] A sensing means is preferably adapted and arranged to sense (e.g., measure) at least one or all of the following: sound waves, electromagnetic waves, electrical signals, a movement, a temperature, a speed, an acceleration, a rotation. For example, a movement, a speed, an acceleration and / or a rotation may be of a mammalian body, a vehicle, a robotic body, a transportation means. It is particularly preferred that a sensing means is adapted and arranged to at least partially absorb electromagnetic waves. A sensing means is preferably adapted and arranged to generate an electrical signal, an optical signal, or both, wherein a signal generated is preferably based on an input received by the sensing means. Examples of such input include a measurement and / or the at least partial absorption of an electromagnetic wave.

[0287] A sensing means may comprise at least one or all of the following: photodetectors, photodiodes, phototransistors, image sensors, optical fibre sensors, laser diodes, optical biosensor, optical position sensors, optical touch sensors, photomultiplier tubes, avalanche photodiodes, charge-coupled devices, complementary metal-oxide-semiconductor sensors, thermal infrared detectors, photon counting detectors, superconducting nanowire single -photon detectors.

[0288] Sensing unit

[0289] A sensing unit comprises a sensing means. A sensing unit preferably comprises an integrated circuit.

[0290] A sensing unit is preferably adapted and arranged to analyse and / or process data of a target area obtained by the sensing unit, wherein said data may be images, sounds, temperature measurements, and / or other sensor readings. The output of a sensing unit is preferably structured data that represents the interpretation and / or analysis of the data obtained by the sensing unit, such as a health of a patient, item detection and recognition, scene information, localization and mapping data, preferably including road geometry and / or landmarks, feature extraction results (including edges, comers, textures, shapes, and / or keypoints), and / or pattern recognition output.

[0291] Spatial information should preferably be understood as information about a space wherein an entity, such as a vehicle, a robotic body, and / or a transportation means, is located. Spatial information may include information on a presence of an item in the vicinity of the entity (e.g., a distance between the entity and the item), a speed of the entity, an acceleration of the entity, and / or a rotation of the entity.

[0292] Data communication module

[0293] A data communication module is preferably adapted and arranged to communicate data between one or more constituents, such as electrical constituents. Here the electrical constituents may be, e.g., one or more chips; one or more dies; one or more integrated circuits located in, e.g., a robotic body, a robotic system, and an assembly; a sensing means and an integrated circuit; a sensing unit and a control system.

[0294] First assembly

[0295] In a preferred aspect of the first assembly, the first sub-assembly and the further sub-assembly are part of the same chip. In another preferred aspect of the first assembly, the first sub-assembly and the further sub-assembly are part of different chips. In this aspect, the different chips may have different functions. For example, a first chip may be a processing unit, and a further chip may be a memory unit (e.g., random access memory). In one preferred aspect of the first assembly, the first sub-assembly and the further sub-assembly are part of the same computational means (such as a computer). In another preferred aspect of the first assembly, the first sub-assembly and the further subassembly are part of different computational means (such as different computers). For example, the first and further sub-assemblies are part of different computers in a computer cluster.

[0296] In a preferred aspect of the first assembly, the first sub-assembly and the further sub-assembly are adapted and arranged to communicate data between said sub-assemblies, via an optical signal, over a distance of at least X mm and / or at least Y cm. This should preferably not be understood to mean that said sub-assemblies cannot communicate data at distances that are smaller than A' mm and / or Y cm. Rather, this should preferably be understood mean that said sub-assemblies can communicate data over distances that range from 0 mm up to at least X mm and / or up to at least Y cm, and preferably distances that are larger than A' mm and / or larger than Y cm.

[0297] An assembly that is adapted and arranged for communication should preferably be understood as an assembly that is adapted and arranged to communicate data over a distance of less than 10 km. An assembly that is adapted and arranged for communication may communicate the data using at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. Alternatively, an assembly that is adapted and arranged for communication may communicate the data using at least one further communication means and at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. Examples of a further communication means include an antenna, an optical cable (such as an optical fibre), a wired connection.

[0298] An assembly that is adapted and arranged for telecommunication should preferably be understood as an assembly that is adapted and arranged to communicate data over a distance of at least 10 km. An assembly that is adapted and arranged for telecommunication may communicate the data using at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. Alternatively, an assembly that is adapted and arranged for telecommunication may communicate the data using at least one further communication means and at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. Examples of a further communication means include an antenna, an optical cable (such as an optical fibre), a wired connection.

[0299] An assembly that is adapted and arranged for high-performance computing preferably comprises at least one supercomputer and / or at least one computer cluster. A supercomputer should preferably be understood as a computer that can perform at least 1014floating-point operations per second. An assembly for high-performance computing is preferably adapted and arranged for parallel computing.

[0300] An assembly that is adapted and arranged for a data centre is preferably adapted and arranged to store data, and more preferably, to communicate data.

[0301] An assembly that is adapted and arranged for artificial intelligence is preferably an assembly that can be used to obtain artificial intelligence models, more preferably to obtain machine learning models, using e.g., supervised learning, semi-supervised learning, and unsupervised learning.

[0302] A switch is preferably adapted and arranged for, e.g., optically connecting two networks and / or optically connecting a computational means (such as a computer) and a network.

[0303] An optical interconnect is preferably adapted and arranged for optically connecting at least one or all of the following: at least two integrated circuits, at least two computer chips. Here the at least two integrated circuits and / or at least two computer chips may be parts of a system-in-package or a chiplet. Here the at least two integrated circuits may be part of the same chip.

[0304] A first assembly according to the invention allows for an increased data transfer rate, an improved signal-to-noise ratio, a reduced crosstalk and a reduced energy consumption. A first assembly also allows for a communication of data over increased distances, while simultaneously allowing for at least one of all of the following: a reduced energy consumption, an increased data transfer rate, an improved signal-to-noise ratio.

[0305] Optical data communication module

[0306] An optical data communication module should preferably be understood as a data communication module that communicates data via optical signals. An optical data communication module is preferably adapted and arranged to communicate data via an optical signal using at least one opto-electronic component. An optical data communication module is preferably adapted and arranged to send data via an optical signal using a modulator. An optical data communication module is preferably adapted and arranged to receive data via an optical signal using a photodetector.

[0307] An optical data communication module is preferably adapted and arranged to communicate data between one or more constituents, such as electrical constituents. Here the electrical constituents may be, e.g., one or more chips; one or more dies; one or more integrated circuits located in, e.g., a robotic body, a robotic system, an assembly; a sensing means and an integrated circuit; a sensing unit and a control system.

[0308] An optical data communication module may comprise at least one or all of the following: an optical fibre, an optical interconnect.

[0309] An optical data communication module according to the invention allows for an increased bandwidth, reduced energy consumption, and a reduced error rate in the data communicated.

[0310] Electromagnetic waves from target area

[0311] Further electromagnetic waves detected by a sensing means and / or sensing unit from a target area include, amongst other, electromagnetic waves reflected by an item in the target area, and / or electromagnetic waves emitted by an item in the target area.

[0312] Optical sensing module

[0313] An optical sensing module may comprise at least one or all of the following: photodetectors, photodiodes, phototransistors, image sensors, optical fibre sensors, laser diodes, optical biosensor, optical position sensors, optical touch sensors, photomultiplier tubes, avalanche photodiodes, charge-coupled devices, complementary metal-oxide- semiconductor sensors, thermal infrared detectors: photon counting detectors, superconducting nanowire singlephoton detectors.

[0314] Examples of optics include lenses, prisms, and diffraction gratings.

[0315] An example of an optical sensing module is disclosed in WO2023076132 Al .

[0316] An optical sensing module according to the present invention allows for improved sensing capabilities and performance. Specifically, the optical sensing module according to the present invention allows for enhanced sensitivity, improved signal-to-noise ratio, reduced crosstalk and reduced energy consumption, allowing for an improved performance and versatility in various sensing applications.

[0317] Apparatus adapted and arranged for a medical application

[0318] A medical application should preferably be understood as including at least one or all of the following: monitoring a health of a patient, diagnosing a pathological condition in a patient; maintaining a state of health of a patient; sending and / or receiving data from a further apparatus, preferably a further apparatus adapted and arranged for a medical application; controlling a further apparatus, preferably a further apparatus adapted and arranged for a medical application. Here a patient is preferably a mammal, and more preferably a human. The apparatus may be implantable in a patient (internal use) and / or may be for use outside a body of a patient.

[0319] Examples of a physical property of a body include an oxygen concentration (e.g., of blood, tissue), a temperature of the body, a heart rate of the body, a blood glucose level. Examples of a sensing means adapted and arranged to measure at least one physical property of a body include a blood glucose monitor, a heart rate monitor, a thermometer, an oximeter.

[0320] The apparatus is preferably adapted and arranged to communicate data via an optical signal by using at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. The apparatus preferably comprises one or more integrated circuits, more preferably one or more integrated circuits adapted and arranged to control the at least one opto-electronic component.

[0321] An apparatus, adapted and arranged for a medical application, and according to the present invention, allows for an improved patient safety, an improved monitoring of the health of a patient and an improved diagnosing of a pathological condition in a patient. An apparatus according to the invention also allows for an improved sensitivity, an increased data transfer rate, an improved signal-to-noise ratio, a reduced crosstalk and a reduced energy consumption.

[0322] Vehicle adapted and arranged for flight

[0323] A vehicle, adapted and arranged for flight, is preferably adapted and arranged to communicate data via an optical signal by using at least one opto-electronic component, preferably using at least one modulator and / or at least one photodetector. Here the communication of data may be a communication of data within the vehicle, between the vehicle and another entity (e.g., another vehicle, a ground station), or both. It is particularly preferred that the communication of data is within the vehicle, e.g., between a sensing unit and an integrated circuit in the vehicle.

[0324] Flight should preferably be understood to include both controlled flight and uncontrolled flight. Here controlled flight should preferably be understood to mean that a movement of the vehicle can be controlled by, e.g., a human operator and / or an integrated circuit (such as a processing unit). For example, an airplane is adapted and arranged for controlled flight by a human and / or an autopilot. Here the vehicle may be controlled remotely. Uncontrolled flight should preferably be understood to mean that a movement of the vehicle is generally not controlled by, e.g., a human operator and / or an integrated circuit (such as a processing unit). For example, a weather balloon is generally adapted and arranged for uncontrolled flight. Flight should preferably be understood to include flight in the atmosphere, as well as above the atmosphere. Flight should preferably be understood to include an orbit of the vehicle, e.g., around the Earth.

[0325] Examples of a propulsion means include an engine, jet propulsion, burners of a hot-air balloon, an envelope of a hot-air balloon, a balloon. Here engines include, but are not limited to, jet engines and turbine engines.

[0326] An example of a means for generating lift is wings. A control system preferably comprises a control means and / or a control module. Examples of a control means include a rudder, an elevator, and an aileron. Example of a control module is an integrated circuit that is adapted and arranged to control a movement of a control means.

[0327] A vehicle adapted and arranged for flight may be used for commercial and / or defence purposes.

[0328] A vehicle, adapted and arranged for flight, and according to the present invention, allows for an improved safety of the vehicle, including passengers in the vehicle, an improved control of the vehicle, an improved control of the vehicle when operated remotely, and an improved communication with the vehicle (e.g., including a tracking of the vehicle, a faster data transfer rate, less disruption when communication with the vehicle).

[0329] Robotic system

[0330] A term robotic system should preferably be understood to comprise a robotic body that is designed to perform tasks autonomously and / or under remote control. In a preferred aspect of the robotic system, the robotic system is adapted and arranged for an autonomous movement of the robotic body.

[0331] A robotic system may be used for commercial and / or defence purposes. For example, a robot system can comprise an industrial robot, a service robot, a personal and domestic robot, an educational robot, a research robot, an entertainment robot. A robotic body may be a robotic arm. Robotic arms typically comprise multiple segments connected by joints, resembling a human arm.

[0332] In a preferred aspect of the robotic system, the robotic system comprises a data communication module, more preferably an optical data communication module. In this aspect, it is particularly preferred that the data communication module is arranged in the robotic body. In this aspect, it is alternatively preferred that the data communication module is arranged at a location that is removed from the robotic body (e.g., does not touch the robotic body). In this aspect, it is alternatively preferred that the data communication module is partly arranged in both the robotic body (e.g., some sub-modules of the data communication module are arranged in the robotic body, while other submodules of the data communication module are arranged at a location that is removed from the robotic body). In this aspect, it is preferred that the data communication module is adapted and arranged for at least one or all of the following: data communication in the robotic body (more preferred), data communication between the robotic body and an external entity. An example of the communicating of data in the robotic body is the transfer of data between different parts of the robotic body (e.g., between different computer chips located in the robotic body). An example of the communicating of data between the robotic body and an external entity is the transfer of data between the robotic body and a computer that is located outside the robotic body.

[0333] In a particularly preferred aspect of the robotic system, the robotic body comprises a sensing unit. In another preferred aspect of the robotic system, the sensing unit is arranged at a location that is removed from the robotic body (e.g., does not touch the robotic body). In another preferred aspect of the robotic system, the sensing unit is partly arranged in both the robotic body (e.g., some sub-modules of the sensing unit are arranged in the robotic body, while other sub-modules of the sensing unit are arranged at a location that is removed from the robotic body). In a particularly preferred aspect of the robotic system, the robotic body comprises a control module. In another preferred aspect of the robotic system, the control module is arranged at a location that is removed from the robotic body (e.g., does not touch the robotic body). In another preferred aspect of the robotic system, the control module is partly arranged in both the robotic body (e.g., some sub-modules of the control module are arranged in the robotic body, while other sub-modules of the control module are arranged at a location that is removed from the robotic body).

[0334] In a particularly preferred aspect of the robotic system, at least one or all of the following forms part of the robotic body: a data communication module, the sensing unit, the control module. In an alternatively preferred aspect of the robotic system, the robotic body does not comprise the data communication module, the sensing unit, or the control module.

[0335] The robotic system according to the present invention allows for improved reliability of the robotic system, improved communication (e.g., data transfer rate) in the robotic system, improved safety, increased versatility of the robotic system, and a reduced energy usage of the robotic system.

[0336] Second assembly

[0337] A second assembly is preferably adapted and arranged for optical computing. A second assembly as used herein should preferably be understood as a computational architecture that uses the principles of optics and photonics for at least one or all of the following: data processing, data transmission, data storage.

[0338] In a preferred aspect of the second assembly, the at least one or more memory units is at least one or more optical memory units and the at least one of more processors is at least one or more optical processors.

[0339] In a preferred aspect of the second assembly, a memory unit comprises at least one or all of the following: a modulator, a photodetector. In a preferred aspect of the second assembly, a processor comprises at least one or all of the following: a modulator, a photodetector.

[0340] An optical processor preferably comprises at least one or all of the following: an optical switch, an optical transistor. Examples of optical processor include photonic integrated circuits (PICs), Fourier optical processors, optical neural networks (ONNs), all-optical switches, and quantum optical processors.

[0341] Examples of an optical memory unit include holographic memory, photorefractive crystals, optical RAM (ORAM), phase change materials and optical fibre delay lines.

[0342] In a preferred aspect of the second assembly, at least one component (e.g., a modulator, a photodetector) is arranged in at least one or all of the following: the at least one processor, the at least one memory unit, the data communications module. If “at least one component is arranged in the at least one processer and the at least one memory unit”, this should preferably be understood to mean that at least one component is arranged in at least one processor and at least one component is arranged in at least one memory unit (i.e., the second assembly comprises at least two components). If “at least one component is arranged in the at least one processer and the data communication module”, this should preferably be understood to mean that at least one component is arranged in at least one processor and at least one component is arranged in at data communication module (i.e., the second assembly comprises at least two components). If “at least one component is arranged in the data communication module and the at least one memory unit”, this should preferably be understood to mean that at least one component is arranged in the data communication module and at least one component is arranged in at least one memory unit (i.e., the second assembly comprises at least two components). If “at least one component is arranged in the at least one processor, the at least one memory unit, and the data communication module”, this should preferably be understood to mean that at least one component is arranged in at least one processor, at least one component is arranged in at least one memory unit, and at least one component is arranged in the data communication module (i.e., the second assembly comprises at least three components).

[0343] The second assembly according to the invention allows for an increased computational speed, improved energy efficiency, improved scalability, and an improved resistance to electromagnetic interference.

[0344] Optical computing is described in, e.g., WO2023145206 Al and WO2021245701 Al .

[0345] Third assembly

[0346] Homomorphic encryption should preferably be understood as a form of encryption that allows mathematical operations to be performed on encrypted data without decrypting said data first. E.g., it enables computations to be carried out directly on ciphertext, yielding an encrypted result that, when decrypted, corresponds to the result of the operations performed on the unencrypted data. Photonic homomorphic encryption should preferably be understood as an encryption technique that combines principles of both photonics and homomorphic encryption to enable computations on encrypted data using optical signals. In photonic homomorphic encryption, encryption and / or decryption are performed using photonic components and techniques, while homomorphic properties are preserved to allow computations on the encrypted data without decryption. A third assembly adapted and arranged for photonic homomorphic encryption is preferably used for at least one or all of the following: secure data processing, cloud computing, secure multiparty computation, and privacy -preserving data analysis.

[0347] Examples of photonic encryption and / or decryption modules include optical phase encoders and / or decoders, optical polarization encoders and / or decoders, optical frequency encoders and / or decoders, optical chaos-based encryption and / or decryption modules, a quantum key distribution system, and an optical one-time pad system.

[0348] In a preferred aspect of the third assembly, the third assembly comprises at least one or all of the following: a modulator, a photodetector.

[0349] In a preferred aspect of the third assembly, at least one component (e.g., a modulator, a photodetector) is arranged in at least one or all of the following: the homomorphic operation module, the photonic encryption module, the photonic decryption module. If “at least one component is arranged in the homomorphic operation module and the photonic encryption module”, this should preferably be understood to mean that at least one component is arranged in the homomorphic operation module and at least one component is arranged in the photonic encryption module (i.e., the third assembly comprises at least two components). If “at least one component is arranged in the homomorphic operation module and the photonic decryption module”, this should preferably be understood to mean that at least one component is arranged in the homomorphic operation module and at least one component is arranged in the photonic decryption module (i.e., the third assembly comprises at least two components). If “at least one component is arranged in the photonic encryption module and the photonic decryption module”, this should preferably be understood to mean that at least one component is arranged in the photonic encryption module and at least one component is arranged in the photonic decryption module (i.e., the third assembly comprises at least two components). If “at least one component is arranged in the homomorphic operation module, the photonic encryption module, and the photonic decryption module”, this should preferably be understood to mean that at least one component is arranged in the homomorphic operation module, at least one component is arranged in the photonic encryption module, and at least one component is arranged in the photonic decryption module (i.e., the third assembly comprises at least three components).

[0350] A light emitting means that is in optical connection with the homomorphic operation module is preferably in optical connection with at least one opto-electronic component (e.g., a modulator) that is arranged in the homomorphic operation module. A light emitting means that is in optical connection with the photonic encryption module is preferably in optical connection with at least one opto-electronic component (e.g., a modulator) that is arranged in the photonic encryption module. A light emitting means that is in optical connection with the photonic decryption module is preferably in optical connection with at least one opto-electronic component (e.g., a modulator) that is arranged in the photonic decryption module.

[0351] The third assembly according to the present invention allows for an increased computational speed, improved energy efficiency, improved scalability, improved resistance to electromagnetic interference, improved encryption, improved encryption and decryption speed, enhanced security, and an improved compatibility with optical networks.

[0352] Homomorphic enciyption is described in, e.g., WO2022213048 Al, US20220116198 Al, US20220366059 Al, and US20240022394 Al .

[0353] Optical connection module

[0354] An optical connection module should preferably be understood as a link that utilises optical signals, typically transmitted through waveguides, optical fibres and / or free-space optical channels, to transmit data e.g., between electrical constituents and / or components, such as between processors, memory modules, input / output components, and networking equipment.

[0355] A transmitter is adapted and arranged to convert electrical signals received from, e.g., an electrical constituent and / or an integrated circuit, into optical signals. A receiver is adapted and arranged to convert optical signal into electrical signals that are transmitted to, e.g., an electrical constituent and / or an integrated circuit. A transceiver is adapted and arranged to both convert electrical signals into optical signals and optical signals into electrical signals. The optical connection module according to the invention allows for an increased bandwidth, a decreased latency, increased transmission distances, less susceptibility to electromagnetic interference, increased security, increased compactness, decreased insertion loss, and increased energy efficiency.

[0356] Optical connection modules are described in, e.g., WO2023124580 Al, WO2023122711 Al, and US20230314711 Al .

[0357] First and further transportation means

[0358] A transportation means includes a vehicle (e.g., a car, a truck), a train, an airplane, a ship, a bicycle, a drone, a satellite. Examples of autonomous movement include autonomous driving, autonomous flying, autonomous sailing, autonomous walking.

[0359] A processing module is preferably adapted and arranged for executing instructions and performing computations. A processing module preferably comprises a processing unit. In a preferred aspect of the first transportation means, the processing module comprises at least one component according to the invention (preferably an opto-electronic component, e.g., a modulator, a photodetector). In a preferred aspect of the first transportation means, the processing module comprises at least one light emitting means.

[0360] Examples of a human-machine interface include a screen, preferably a touch screen, a device adapted and arranged to play a sound, a device adapted and arranged to emit a signal, preferably a light signal. Examples of a steering means include a steering wheel, a rudder, handlebars, ailerons. Examples of a propulsion means include a combustion engine, a jet engine, a sail, a drivetrain of a bicycle.

[0361] A sensing unit may comprise at least one or all of the following: photodetectors, photodiodes, phototransistors, image sensors, optical fibre sensors, laser diodes, optical biosensor, optical position sensors, optical touch sensors, photomultiplier tubes, avalanche photodiodes, charge-coupled devices, complementary metal-oxide-semiconductor sensors, thermal infrared detectors, photon counting detectors, superconducting nanowire single -photon detectors. A perception sub-module is adapted and arranged to analyse and / or process data of a target area obtained by a sensing unit, wherein said data may be images, sounds, and / or other sensor readings. The output of a perception sub-module is preferably structured data that represents the interpretation and / or analysis of the data obtained by the sensing unit, such as item detection and recognition, scene information, localization and mapping data, preferably including road geometry and / or landmarks, feature extraction results (including edges, comers, textures, shapes, and / or keypoints), and / or pattern recognition output.

[0362] A generation sub-module may be used in e.g., autonomous systems. The generation sub-module is adapted and arranged to process and / or analyse the data provided by the perception module in order to, e.g., determine actions and / or responses based on predefined objectives, rules, and / or constraints. For example, the generation sub-module outputs driving commands, including trajectory planning, path selection, and control commands for steering, acceleration, and braking in autonomous vehicles. Subsequently, a control unit may execute a driving command generated by the generation sub-module and control the transportation means’ motion accordingly. A further transportation means preferably comprises an integrated circuit that is adapted and arranged to be in data communication with at least one electrical constituent (preferably an opto -electronic component, e.g., a modulator, a photodetector). A further transportation means preferably comprises a light emitting means that is adapted and arranged to be in optical connection with the at least one opto-electronic component (e.g., a modulator).

[0363] The first and further transportation means according to the present invention allow for improved safety, enhanced traffic efficiency, reduced environmental impact, increased accessibility, enhanced user experience, increased scalability, and increased adaptability.

[0364] A transportation means is described in, e.g., DE 102021121918 Al .

[0365] Fourth assembly

[0366] The fourth assembly preferably comprises a light emitting means that is adapted and arranged to be in optical connection with at least one opto-electronic component (e.g., a modulator).

[0367] Examples of artificial intelligence (Al) include perceiving, synthesizing, inferring, predicting and / or generating information using, e.g., machine learning. For example, a fourth assembly may use a combination of hardware and software to perform operation to perceive, synthesize, infer, predict, and / or generate information.

[0368] The fourth assembly according to the present invention allows for a handling of increased volumes of data, faster processing speeds, reduced susceptibility to electromagnetic interference, and lower energy consumption. The fourth assembly according to the present invention allows for massive parallelism (e.g., parallel computing) and high-speed data processing, such as big data analytics, neural network training, and real-time simulations.

[0369] An assembly for machine Al and machine learning is described in, e.g., US20230114847 Al, WO2018187487 Al, and US20220188155 Al .

[0370] Front-end-of-line layer

[0371] A front-end-of-line (FEOL) layer is well-known to the skilled person. An example of a front-end-of-line layer is a layer comprising one or more electronic components, more preferably integrated electronics components. Here examples of preferred electronic components include transistors, capacitors, diodes, and resistors. A further example of a front-end-of-line layer is a layer comprising an integrated circuit.

[0372] TEST METHODS

[0373] The following test methods were used within the context of the invention. Unless stated otherwise, the measurements were conducted at an ambient temperature of 23 °C, an ambient air pressure of 100 kPa (0.986 atm) and a relative air humidity of 50 %. Preparation of a Sample Lamella

[0374] For producing a sample lamella, a focused ion beam is used to make a cut through the layered structure of the component or component precursor. The section plane is parallel to the layer sequence, i.e., to the direction of the layer thickness. The thickness of the sample lamella is 50 nm. The sample lamella preparation is conducted automatically using the Thermo Scientific Auto TEM 5 software from Thermo Fisher Scientific Inc.

[0375] Dimensions

[0376] The length and width of the layers of the component and component precursor are determined using scanning electron microscopy (SEM).

[0377] The layer thicknesses of layers of the component and component precursor, except for layers of graphene, are measured using transmission electron microscopy (TEM) on a sample lamella which is prepared as described above. The sample lamella and TEM are also used to measure the distance between layers. The TEM device is calibrated and used according to the standard ISO 29301 :2017.

[0378] RC Time Constant

[0379] The RC time constant between the first electrical conductor layer and the further electrical conductor layer is measured using a Vector Network Analyzer (VNA) connected to the component using shielded cable transmission lines. The connection to the component is made using an RF semiconductor Probe Tip (the Infinity Probe commercially available from FormFactor Inc. (USA)). The measurement setup is calibrated to isolate the RC behaviour of the component in order to suppress the influence of the interconnection on the measurements. The VNA is calibrated using the multireflect-thru method described in Lewandowski and Gu (2017), A Multireflect-Thru Method of Vector Network Analyzer Calibration, IEEE Transactions on Microwave Theory and Techniques, 65, 3, 905.

[0380] Composition

[0381] Except for graphene, the composition of a layer is determined using electron energy-loss spectroscopy (EELS). This method is conducted on a sample lamella of the component or component precursor. The sample lamella is prepared as described above. EELS is described in F. Hofer et al., Fundamentals of electron energy-loss spectroscopy, EMAS 2015 Workshop, IOP Conf. Series: Materials Science and Engineering 109, 012007 (2016).

[0382] The presence of graphene can be determined using Raman spectroscopy. A 514 nm Raman spectrum is measured. The G peak is at about 1,581 cm-1. The 2D peak depends on the laser wavelength and is often at about 2,700 cm-1. The G peak and the 2D peak together identify a carbon layer. The shape of the 2D peak indicates the number of graphene layers as shown in Figure 4a, 4c, and 4f of Andrea C. Ferrari and Denis M. Basko, Raman spectroscopy as a versatile tool for studying the properties of graphene, nature nanotechnology, vol. 8, no. 4, Art. no. 4, Apr. 2013, DOI: 10. 1038 / NNANO.2013.46. Furthermore, Figure If shows a shift in the shear mode (C) for multilayer graphene, where single layer graphene (SLG) shows no shear mode.

[0383] The Raman spectra of graphite and multilayer graphene consist of two fundamentally different sets of peaks. The peaks of the first set are caused by in-plane vibrations. Examples of such peaks are the D, G and 2D peaks. Those peaks are present in single layer graphene (SLG) and also in multilayer graphene. The peaks of the other set are caused by motions of the planes relative to one another, either perpendicular or parallel to their normal. Examples of such peaks are the shear (C) modes and the layer-breathing modes (LBMs). Those peaks are not present in SLG. The low-frequency E2gmode in graphite, also called mode C, is at about 42 cm1. This mode C is sensitive to the interlayer coupling. Thus, the absence of the mode C peak generally indicates SLG. Particular care, however, has to be taken to make sure that the mode C peak is not absent for another reason. Further, the mode C scales with the number of carbon layers. For bilayer graphene (BLG), for example, the mode C is at about 31 cm-1. The mode C peak frequency is below the notch and edge filter cut-off of many spectrometers, particularly those used for production-line monitoring. This problem is overcome by combining a BragGrate filter with a single monochromator. This allows to measure Pos(C) for an arbitrary number of graphene layers.

[0384] Selectivity

[0385] The etch rate of an etching method for a certain layer is measured as follows: A test layer with a thickness of 500 nm and of the same material and made by the same method as the layer to be studied is provided. The test layer is then subjected to the etching method, i.e., to the etching environment with the etchant of the etching method to be studied. The time required to reduce the thickness of the test layer by 300 nm is measured (i.e., after the etching method has been completed, the test layer has a thickness of 200 nm). An intermediate etching rate is then determined by dividing 300 nm with the measured time. The test is repeated 10 times to obtain 10 intermediate etching rates. The etching rate of the etching method for the layer to be studied is then calculated by taking the average of the 10 intermediate etching rates.

[0386] The selectivity of a certain etching method (first or further etching method) for the dielectric layer A over the dielectric layer B is the ratio of the etching rate of this etching method for the layer A to the etching rate of this etching method for the layer B. The selectivity of a certain etching method (first or further etching method) for the dielectric layer B over the dielectric layer A is the ratio of the etching rate of this etching method for the layer B to the etching rate of this etching method for the layer A. Therein, all etching rates are determined as generally described above. Refractive Index

[0387] First, a sample lamella of the layer structure of the component or component precursor to be studied is prepare das described above. Using the sample lamella, the layer thicknesses of the individual layers is determined by TEM as also described above. Based on the measured layer thicknesses, the sample lamella is further used to determine the refractive index of the layer of interest by ellipsometric measurement according to ISO 23131 :2021(en). Model 7.3 is used as a reference.

[0388] Electrical Conductivity

[0389] The electrical conductivity of thin films is measured through a four-point probe. A four-point probe comprises four equally spaced, co-linear electrical probes. It operates by applying a DC current (I) between the outer two probes and measuring the resultant voltage drop (AV) between the inner two probes. For thin films where the film thickness (t) is at least 1,000 times the probe spacing, the sheet resistance (Rs) is:

[0390] Tt AV AV

[0391] RS =)T"4-53236T

[0392] AV is the change in voltage measured between the inner probes, and I is the current applied between the outer probes. The electrical conductivity (o) is defined as:

[0393] 1 o =

[0394] Rs• t

[0395] Responsivity of Photodetectors

[0396] The responsivity of a photodetector is the measure of the optical to electrical conversion efficiency. It is expressed by the value of the photocurrent in mA generated by each mW of optical signal. To measure the responsivity a tunable laser is used to provide a wavelength tunable light source and a variable attenuator adjusts the optical power level that is sent to the photodetector under test. For the measurement, the optical power level has to be kept high enough, more than about 50 pW, to avoid non-linear effects in the photodetector, but still low enough to represent the low energy consumption case desired by the telecommunication application. Therefore, a transimpedance amplifier (TIA) must be used to linearly convert the rather weak photocurrent into a voltage signal. A voltmeter is then used to measure the voltage signal at the output of the TIA which is proportional to the photocurrent generated by the photodetector. A calibrated optical power meter is used to measure the absolute power level of the optical signal. The voltage signal obtained from the photocurrent is measured for 10 equidistantly spaced optical power levels. For each of these optical power levels, the ratio of voltage signal (mV) to the power level as measure by the optical power meter in mW is calculated. The arithmetic mean over the 10 ratios is calculated as a measure of the responsivity of the photodetector. Modulation Speed of Modulators

[0397] Here, the modulation speed of a modulator is its cut-off frequency. In order to determine the modulation speed of a modulator, it is connected to a calibrated vector network analyser (VNA) with a bandwidth that is higher than the cut-off frequency of the modulator. The RF output port of the VNA is connected to the electrical signal input from the modulator and the RF input signal in the VNA is connected to a calibrated photoreceiver. A photoreceiver as well as all other equipment in the measurement, such as cables, connectors, probe tips, etc. should be fully deembedded from the measurement. It is to be made sure that the bandwidth of the photoreceiver and the other components of the test setup are not a limiting factor for the measurement of the modulation speed. A laser sends light into the optical input port of the modulator, where the light is modulated and guided to the calibrated photoreceiver. The VNA measures the S21 (forward transmission) parameter, which is the ratio of the RF input to the RF output with both magnitude and phase terms. The S21 parameter is measured in a frequency range from DC up to well beyond the cut-off frequency of the modulator with an increasing frequency load. The lowest frequency at which the S21 parameter amplitude drops by 3 dB compared to the maximum amplitude at DC is referred to as the modulation speed.

[0398] EXAMPLES

[0399] The invention is illustrated further by way of examples. The invention is not restricted to the examples.

[0400] Graphene for all of the Examples and Comparative Examples is commercially available from Graphenea S.A. (Spain), Graphene Laboratories Inc. (USA) and Grolltex Inc (USA).

[0401] For each of the Examples 1 and 2 and the Comparative Examples 1 and 2, 5,000 photodetectors are prepared on a standard silicon wafer with a diameter of 200 mm and a thickness of 725 mm as substrate.

[0402] Example 1

[0403] A component precursor as schematically shown in Figure 14a) (without the substrate) is prepared. In the Figure 14a), the direction of the length of the component precursor and the individual layers points into the figure plane. A 3,000 nm thick layer of Si(>2 is created on the silicon wafer by wet thermal oxidation. A 350 nm thick layer of SiN is coated on the preceding layer of Si(>2 by PVD. The layer of SiN is patterned by photolithography to obtain one partial layer of SiN per photodetector to be prepared as waveguide. Reactive ion etching is used to partially remove the SiN. A further layer of S1O2 is deposited on the first Si O2 layer and the waveguides by PEC VD in order to embed the waveguides. The further layer of Si O 2 is 1 ,000 nm thick. The further layer of S1O2 is planarised and removed down to the top surfaces of the waveguides by chemical mechanical polishing (CMP). An embedded waveguide layer is obtained. Subsequently, a 10 nm thick layer of AI2O3 is coated on the embedded waveguide layer by atomic layer deposition. A single graphene layer is coated on the layer of AI2O3 by graphene lamination. The layer of graphene is 1 atomic carbon layer thick, i.e., has a thickness of less than 1 nm. Photolithography with dry etching is used to pattern the graphene layer in order to obtain one partial graphene layer per waveguide, where each partial graphene layer covers the entire width of the respective waveguide and extends further on both sides of the waveguide as illustrated in Figure 14a). Further, a 20 nm thick layer of AI2O3 is coated on the first layer of AI2O3 and the patterned graphene layer by atomic layer deposition. Thus, the graphene sheets are fully embedded in AI2O3. A further layer of SiCE is coated on the embedded graphene layer by PECVD. This SiCE layer is 30 nm thick. Each of the graphene sheets has a length of 100 pm.

[0404] Through-holes which extend from the top S1O2 surface of the precursor through the upper S1O2 layer are prepared by lithography as generally illustrated in Figures 14a) to 14f) for a single through-hole. The removal of the photoresist which is indicated in the step from Figure 14e) to 14f) is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Here, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor in the direction of a first end region of the respective graphene sheet as illustrated in Figure 14f). The other through-hole of each pair extends from the top surface of the precursor in the direction of the other end region of the respective graphene sheet which is opposite the first end region in a direction of the width of the graphene sheet. Reactive ion etching is used as first etching method to create the through-holes in the top SiCE layer (dielectric layer A). The through-holes are used to prepare vias as generally illustrated for a single via in Figures 8 to 10. Here, atomic layer etching is used as further etching method to extend the through-holes partially through the AI2O3 (dielectric layer B) to the top surfaces of the graphene sheets. The selectivity of the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the further etching method for the dielectric layer A over the dielectric layer B is 0. 1. The through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair electrically connects to the top surface of the respective graphene sheet in its first end region. The other via of each pair connects to the top surface of the same graphene sheet in its other end region. Superfluous via material on the top SiCE layer is removed by CMP. A single one of the thus obtained 5,000 photodetectors on the wafer is illustrated in Figure 3.

[0405] Example 2

[0406] A component precursor as schematically shown in Figure 14a) (without the substrate) is prepared as described above for the Example 1. Further, through-holes which extend from the top SiCE surface of the precursor through the upper SiCE layer are prepared by lithography as also described above for the Example 1. The pairs of 2 through-holes each 1 pm of the length of each graphene sheet are used to prepare vias as generally illustrated for a single via in Figures 11 to 13. Here, reactive ion etching is used as further etching method to extend the through-holes partially through the AI2O3 (dielectric layer B) and also through the respective graphene sheet. The selectivity of the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the further etching method for the dielectric layer A over the dielectric layer B is 0.2. The through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair extends through the respective graphene sheet in its first end region and thus electrically connects to the graphene sheet. The other via of each pair extends through the same graphene sheet in its other end region and thus electrically connects to the graphene sheet. Superfluous via material on the top SiCE layer is removed by CMP. A single one of the thus obtained 5,000 photodetectors on the wafer is illustrated in Figure 4.

[0407] Comparative Example 1

[0408] A component precursor as schematically shown in Figure 16a) (without the substrate) is prepared. In the Figure 16a), the direction of the length of the component precursor and the individual layers points into the figure plane. A 3,000 nm thick layer of S1O2 is created on the silicon wafer by wet thermal oxidation. A 350 nm thick layer of SiN is coated on the preceding layer of S1O2 by PVD. The layer of SiN is patterned by photolithography to obtain one partial layer of SiN per photodetector to be prepared as waveguide. Reactive ion etching is used to partially remove the SiN. A further layer of S1O2 is deposited on the first S1O2 layer and the waveguides by PEC VD in order to embed the waveguides. The further layer of S1O2 is 1 ,000 nm thick. The further layer of S1O2 is planarised and removed down to the top surfaces of the waveguides by CMP. An embedded waveguide layer is obtained. Subsequently, a 10 nm thick layer of AI2O3 is coated on the embedded waveguide layer by atomic layer deposition. A single layer of graphene is coated on the layer of AI2O3 by graphene lamination. The layer of graphene is 1 atomic carbon layer thick, i.e., has a thickness of less than 1 nm. Photolithography with dry etching is used to pattern the graphene layer in order to obtain one partial graphene layer per waveguide, where each partial graphene layer covers the entire width of the respective waveguide and extends further on both sides of the waveguide as illustrated in Figure 16a). Further, a 20 nm thick layer of AI2O3 is coated on the first layer of AI2O3 and the patterned graphene layer by atomic layer deposition. Thus, the graphene sheets are fully embedded in AI2O3. Each of the graphene sheets has a length of 100 pm.

[0409] Through-holes which extend from the top AI2O3 surface of the precursor partially through the AI2O3 layer to the top surfaces of the graphene sheets are prepared by photolithography as generally illustrated in Figures 16a) to 16f) for a single through-hole. The removal of the photoresist which is indicated in the step from Figure 16e) to 16f) is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Here, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor to the top surface of the respective graphene sheet in a first end region of the graphene sheet as illustrated in Figure 16f). The other through-hole of each pair extends from the top surface of the precursor to the top surface of the same graphene sheet in the other end region of the graphene sheet which is opposite the first end region in a direction of the width of the graphene sheet. Atomic layer etching is used to create the through-holes. Acetone is used to clean the top surface of the precursor from remaining photoresist. The through-holes are used to prepare vias as generally illustrated for a single via in Figures 16g) and 16h). For this purpose, the through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by C VD. The first via of each pair electrically connects to the top surface of the respective graphene sheet in its first end region. The other via of each pair connects to the top surface of the same graphene sheet in its other end region. Superfluous via material on the top AI2O3 layer is removed by a dry etch after a lithographic contact definition.

[0410] Comparative Example 2

[0411] A component precursor as schematically shown in Figure 17a) (without the substrate) is prepared in the same way as described above for the Comparative Example 1.

[0412] Through-holes which extend from the top AI2O3 surface of the precursor partially through the AI2O3 layer and completely through the graphene sheets are prepared by photolithography as generally illustrated in Figures 17a) to 17f) for a single through-hole. The removal of the photoresist which is indicated in the step from Figure 17e) to 17f) is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Here, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor through the respective graphene sheet in a first end region of the graphene sheet as illustrated in Figure 17f). The other through-hole of each pair extends from the top surface of the precursor through the same graphene sheet in the other end region of the graphene sheet which is opposite the first end region in a direction of the width of the graphene sheet. Reactive ion etching is used to create the through-holes. Acetone is used to clean the top surface of the precursor from remaining photoresist. The through-holes are used to prepare vias as generally illustrated for a single via in Figures 17g) and 17h). For this purpose, the through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair electrically extends through the respective graphene sheet in its first end region and thus electrically connects to the graphene sheet. The other via of each pair extends through the same graphene sheet in its other end region and thus electrically connects to the graphene sheet. Superfluous via material on the top AI2O3 layer is removed by a dry etch after a lithographic contact definition.

[0413] For each of the Examples 3 and 4 and the Comparative Examples 3 and 4, 5,000 modulators are prepared on a standard silicon wafer with a diameter of 200 mm and a thickness of 725 mm as substrate. Example 3

[0414] Modulators as illustrated in Figure 5 are prepared. In the Figure 5, the direction of the length of the modulator and the individual layers points into the figure plane. A 3,000 nm thick layer of S1O2 is coated on the silicon wafer by PECVD. A 350 nm thick layer of SiN is created on the preceding layer of S1O2 by wet thermal oxidation. The layer of SiN is patterned by photolithography to obtain one partial layer of SiN per modulator to be prepared as waveguide. Reactive ion etching is used to partially remove the SiN. A further layer of S1O2 is deposited on the first S1O2 layer and the waveguides by PECVD in order to embed the waveguides. The further layer of S1O2 is 1 ,000 nm thick. The further layer of S1O2 is planarised and removed down to the top surfaces of the waveguides by CMP. An embedded waveguide layer is obtained. Subsequently, a 10 nm thick layer of AI2O3 is coated on the embedded waveguide layer by atomic layer deposition. A first single layer of graphene is coated on the layer of AI2O3 by graphene lamination. The layer of graphene is 1 atomic carbon layer thick, i.e., has a thickness of less than 1 nm. Photolithography with dry etching is used to pattern the graphene layer in order to obtain one partial graphene layer per waveguide, where each partial graphene layer covers the entire width of the respective waveguide and extends further on one side of the waveguide as illustrated in Figure 5. A 10 nm thick layer of AI2O3 is coated on the first layer of AI2O3 and the first patterned graphene layer by atomic layer deposition in order to embed the graphene sheets of the first patterned graphene layer. Subsequently, a further layer of the graphene is coated on the AI2O3 by graphene lamination. The thickness of the further layer of graphene is the same as the thickness of the first layer of graphene. Photolithography with wet etching is used to pattern the further graphene layer in order to obtain one further partial graphene layer per waveguide, where each further partial graphene layer covers the entire width of the respective waveguide and extends further on the other side of the waveguide as illustrated in Figure 5. Further, a 20 nm thick layer of AI2O3 is coated on the AI2O3 and the further patterned graphene layer by atomic layer deposition. Thus, the further graphene sheets are also fully embedded in AI2O3. Subsequently, a further layer of S1O2 is coated on the embedded graphene layers by PECVD. This S1O2 layer is 30 nm thick. Each of the graphene sheets has a length of 100 pm.

[0415] Through-holes which extend from the top S1O2 surface of the precursor through the upper S1O2 layer are prepared by photolithography. The removal of the photoresist is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Here, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor in the direction of the end region of the upper graphene sheet, which does not overlap with the respective lower graphene sheet and the respective waveguide. The other through-hole of each pair extends from the top surface of the precursor in the direction of the end region of the respective lower graphene sheet, which does not overlap with the respective upper graphene sheet and the respective waveguide. Reactive ion etching is used as first etching method to create the through-holes in the top S1O2 layer (dielectric layer A). The through-holes are used to prepare vias. Here, atomic layer etching is used as further etching method to extend the through-holes partially through the AI2O3 (dielectric layer B) to the top surfaces of the graphene sheets. The selectivity of the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the further etching method for the dielectric layer A over the dielectric layer B is 0. 1. The through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair electrically connects to the top surface of the respective upper graphene sheet in its non-overlapping end region. The other via of each pair connects to the top surface of the respective lower graphene sheet in its non-overlapping end region. Superfluous via material on the top SiC>2 layer is removed by CMP. A single one of the thus obtained 5,000 modulators on the wafer is illustrated in Figure 5.

[0416] Example 4

[0417] Modulators as illustrated in Figure 6 are prepared. In the Figure 6, the direction of the length of the modulator and the individual layers points into the figure plane. A precursor with embedded waveguide layer, pairs of upper and lower graphene sheets embedded in AI2O3, and a top layer of S1O2 is prepared as described above for the Example 3.

[0418] Through-holes which extend from the top S1O2 surface of the precursor through the upper S1O2 layer are prepared by photolithography as described above for the Example 3. The through-holes are used to prepare vias. Here, reactive ion etching is used as further etching method to extend the through-holes partially through the AI2O3 (dielectric layer B) and also through the respective graphene sheets. The selectivity of the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the further etching method for the dielectric layer A over the dielectric layer B is 0.2. The through-holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair extends through the respective upper graphene sheet in its non-over- lapping end region and thus electrically connects to this graphene sheet. The other via of each pair extends through the respective lower graphene sheet in its non-overlapping end region and thus electrically connects to this graphene sheet. Superfluous via material on the top S1O2 layer is removed by CMP. A single one of the thus obtained 5,000 modulators on the wafer is illustrated in Figure 6.

[0419] Comparative Example 3

[0420] A component precursor without through-holes is prepared as described for the Example 3. Here, however, the top layer of SiCE is omitted.

[0421] Subsequently, through-holes which extend from the top AI2O3 surface of the precursor partially through the AI2O3 to the top surfaces of the graphene sheets are prepared by photolithography. The removal of the photoresist is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Here, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor to the top surface of the upper graphene sheet in the end region of the graphene sheet which does not overlap with the respective lower graphene sheet and the respective waveguide. The other through-hole of each pair extends from the top surface of the precursor to the top surface of the respective lower graphene sheet in the end region of the lower graphene sheet, which does not overlap with the respective upper graphene sheet and the respective waveguide. Atomic layer etching is used to create the through-holes in the AI2O3 layer. Acetone is used to clean the top surface of the precursor from remaining photoresist. The through-holes are used to prepare vias. For this purpose, the through -holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair electrically connects to the top surface of the respective upper graphene sheet in its non-overlapping end region. The other via of each pair connects to the top surface of the respective lower graphene sheet in its non-overlapping end region. Superfluous via material on the top AI2O3 surface is removed by a dry etch after a lithographic contact definition.

[0422] Comparative Example 4

[0423] A component precursor without through-holes is prepared as described for the Example 3. Elere, however, the top layer of SiCE is omitted.

[0424] Subsequently, through-holes which extend from the top AI2O3 surface of the precursor partially through the AI2O3 and completely through the graphene sheets are prepared by photolithography. The removal of the photoresist is done by an oxygen plasma. Each through-hole is circular in cross-section and has a diameter of 500 nm. Elere, along the length of the graphene sheets, equidistantly every 1 pm a pair of 2 through-holes per graphene sheet is formed. The first through-hole of each pair extends from the top surface of the precursor through the upper graphene sheet in the end region of the upper graphene sheet, which does not overlap with the respective lower graphene sheet and the respective waveguide. The other through-hole of each pair extends from the top surface of the precursor through the respective lower graphene sheet in the end region of the lower graphene sheet, which does not overlap with the respective upper graphene sheet and the respective waveguide. Reactive ion etching is used to create the through- holes in the AI2O3 layer and the graphene. Acetone is used to clean the top surface of the precursor from remaining photoresist. The through-holes are used to prepare vias. For this purpose, the through -holes are filled with a titanium liner by PVD and then with a tungsten metal fill by CVD. The first via of each pair extends through the respective upper graphene sheet in its non-overlapping end region and thus electrically connects to this graphene sheet. The other via of each pair extends through the respective lower graphene sheet in its non-overlapping end region and thus electrically connects to this graphene sheet. Superfluous via material on the top AI2O3 surface is removed by a dry etch after a lithographic contact definition.

[0425] Some specifics of the Examples 1 to 4 and the Comparative Examples 1 to 4 as described in detail above are summarised in Table 1 for comparison.

[0426] able 1 : Summary of details of the Examples 1 to 4 and the Comparative Examples 1 to 4

[0427] Evaluation

[0428] The responsivities of in each case 100 of the photodetectors of the Examples 1 and 2, and of the Comparative Examples 1 and 2 are tested as described above in the test methods section. In each case, the 100 photodetectors to be tested are selected from positions homogeneously distributed across the respective wafer. For each of the Examples 1 and 2, and the Comparative Examples 1 and 2, the width spanned by the responsivities of the respective 100 photodetectors is determined. Thus, for each of Examples 1 and 2, and the Comparative Examples 1 and 2, a width of the responsivities is obtained. These 4 widths are compared to one another for an evaluation of the widths of the distributions of the responsivities of the photodetectors produced in the Examples 1 and 2, and the Comparative Examples 1 and 2. The qualitative result is given in the below Table 2.

[0429] The modulation speeds of in each case 100 of the modulators of the Examples 3 and 3, and of the Comparative Examples 3 and 3 are tested as described above in the test methods section. In each case, the 100 modulators to be tested are selected from positions homogeneously distributed across the respective wafer. For each of the Examples 3 and 4, and the Comparative Examples 3 and 4, the width spanned by the modulation speeds of the respective 100 modulators is determined. Thus, for each of Examples 3 and 4, and the Comparative Examples 3 and 4, a width of the modulation speeds is obtained. These 4 widths are compared to one another for an evaluation of the widths of the distributions of the modulation speeds of the modulators produced in the Examples 3 and 4, and the Comparative Examples 3 and 4. The qualitative result is also given in the below Table 2.

[0430] The qualitative results of the comparative tests are summarised in Table 2. Therein, “++” means a more favourable result than “+” and “+” means a more favourable result than

[0431] Table 2: Summary of qualitative results of the comparative tests in regard of the widths of the distributions of the responsivities of photodetectors and the widths of the distributions of the modulation speeds of modulators Without wishing to be bound to this theory, based on the results of the above comparison tests the inventors believe that the reduction of the width of the distribution of the responsivity of the photodetectors and the reduction of the width of the distribution of the modulation speed of the modulators is caused by an improvement of contact re- sistance uniformity of the vias which electrically contact the graphene layers. This means that the variation of this contact resistance across all vias on the wafer is reduced. A narrower distribution of the responsivity and of the modulation speed allows to produce computer chips which are more reliably suitable for an operation at a predetermined speed. This is, in particular, because the slowest component of a chip determines the overall speed of the chip. In this sense, the invention allows to reduce the substandard fraction in the production of integrated circuits. Thus, the invention increases the effective production rate in the production of integrated circuits.

[0432] FIGURES

[0433] List of Figures The figures serve to exemplify the present invention, and should not be viewed as limiting the invention. Furthermore, the figures are not drawn to scale. They show:

[0434] Figure 1 a cross-sectional scheme of a component according to the invention

[0435] Figure 2 a cross-sectional scheme of another component according to the invention

[0436] Figure 3 a cross-sectional scheme of another component according to the invention

[0437] Figure 4 a cross-sectional scheme of another component according to the invention

[0438] Figure 5 a cross-sectional scheme of another component according to the invention

[0439] Figure 6 a cross-sectional scheme of another component according to the invention

[0440] Figure 7 a flow chart of a method according to the invention

[0441] Figure 8 a cross-sectional scheme of a component precursor as provided in step A. of a method according to the invention

[0442] Figure 9 an illustration of step B. of the method of Figure 8

[0443] Figure 10 an illustration of step C. of the method of Figure 8

[0444] Figure 11 a cross-sectional scheme of a component precursor as provided in step A. of a method according to the invention

[0445] Figure 12 an illustration of step B. of the method of Figure 11

[0446] Figure 13 an illustration of step C. of the method of Figure 11

[0447] Figures illustrations of steps A] to F] of a method according to the invention

[0448] 14a) to 14f)

[0449] Figure 15 a scheme of an electronic device according to the invention

[0450] -n - Figures illustrations of a method for producing a component, where neither the method nor the

[0451] 16a) to 16h) component is according to the invention

[0452] Figures illustrations of a further method for producing a component, where neither the method

[0453] 17a) to 17h) nor the component is according to the invention

[0454] Figures schematic diagrams illustrating various embodiments that comprise a component accord-

[0455] 18 to 29 ing to the invention

[0456] Description of Figures

[0457] Figure 1 shows a cross-sectional scheme of a component 100 according to the invention. The component 100 comprises a layer sequence which includes a dielectric layer A 103, a dielectric layer B 104 and an optical element layer 105 superimposed on one another in the given order from a first side 101 of the component 100 to a further side 102 of the component 100. The further side 102 is opposite the first side 101. The optical element layer 105 is partially embedded in a dielectric layer C 106, which also is a layer of the layer sequence and follows the dielectric layer B 104 in a first direction 109, which runs from the first side 101 to the further side 102. The dielectric layer C 106 and the optical element layer 105 together form an embedded optical element layer 107. The layer sequence further comprises a first electrical conductor layer 108, which is fully embedded in the dielectric layer B 104 at a first distance 116 from the optical element layer 105. In a view in the first direction 109, a first region 110 of the first electrical conductor layer 108 and a first region 111 of the optical element layer 105 overlap one another. The first electrical conductor layer 108 includes a second region 114 and a third region 115, neither of which, in the view in the first direction 109, overlaps with the optical element layer 105. Further, the first electrical conductor layer 108 has a first layer surface 112, which faces away from the dielectric layer B 104. A first electrical connection 113 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103 and partially through the dielectric layer B 104 and electrically connects to the second region 114 of the first electrical conductor layer 108. More specifically, the first electrical connection 113 connects to a surface of the first electrical conductor layer 108, which faces towards the first side 101 of the component 100. The dielectric layer A 103 is less resistant to a first etching method than the dielectric layer B 104, and the dielectric layer B 104 is less resistant to a further etching method than the dielectric layer A 103.

[0458] Figure 2 shows a cross-sectional scheme of another component 100 according to the invention. The component 100 of Figure 2 is identical with the component 100 in Figure 1, except that the first electrical connection 113 does not connect to a surface of the first electrical conductor layer 108, which faces towards the first side 101 of the component 100, but instead extends through the second region 114 of the first electrical conductor layer 108 in the first direction 109 and thereby electrically connects to the first electrical conductor layer 108. Figure 3 shows a cross-sectional scheme of another component 100 according to the invention. The description of Figure 1 applies identically to Figure 3. In addition to the elements of the component 100 in Figure 1, the component 100 in Figure 3 comprises a further electrical connection 301. This further electrical connection 301 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103 and partially through the dielectric layer B 104 and electrically connects to the third region 115 of the first electrical conductor layer 108. Similar to the first electrical connection 113, the further electrical connection 301 connects to the surface of the first electrical conductor layer 108, which faces towards the first side 101 of the component 100. Each of the first electrical connection 113 and the further electrical connection 301 is a via, which was obtained by filling a through- hole with a liner of titanium and a tungsten filling. The through-holes are circular in cross-section and each have a diameter of 500 nm. The dielectric layer A 103 consists of SiO2and has a layer thickness of 30 nm. The dielectric layer B 104 consists of AI2O3 and also has a layer thickness of 30 nm. The dielectric layer C 106 consists of SiCE and has a layer thickness of 3,500 nm. The optical element layer 105 is a waveguide which consists of SiN. The layer thickness of the optical element layer 105 is 350 nm. The first electrical conductor layer 108 is a graphene sheet, which is a single atomic carbon layer thick, i.e., has a thickness of less than 1 nm. The first distance 116 is 10 nm. The selectivity of the reactive ion etching as the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the atomic layer etching as the further etching method for the dielectric layer A over the dielectric layer B is 0.1. The component 100 in Figure 3 is an opto-electronic component, more specifically a photodetector in accordance with the Example 1 above.

[0459] Figure 4 shows a cross-sectional scheme of another component 100 according to the invention. The description of Figure 2 applies identically to Figure 4. In addition to the elements of the component 100 in Figure 2, the component 100 in Figure 4 comprises a further electrical connection 301. This further electrical connection 301 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103, partially through the dielectric layer B 104 and through the third region 115 of the first electrical conductor layer 108 and thereby electrically connects to the first electrical conductor layer 108. Each of the first electrical connection 113 and the further electrical connection 301 is a via, which was obtained by filling a through-hole with a liner of titanium and a tungsten filling. The through-holes are circular in cross-section and each have a diameter of 500 nm. The dielectric layer A 103 consists of SiCE and has a layer thickness of 30 nm. The dielectric layer B 104 consists of AI2O3 and also has a layer thickness of 30 nm. The dielectric layer C 106 consists of Si( E and has a layer thickness of 3,500 nm. The optical element layer 105 is a waveguide which consists of SiN. The layer thickness of the optical element layer 105 is 350 nm. The first electrical conductor layer 108 is a graphene sheet, which is a single atomic carbon layer thick, i.e., has a thickness of less than 1 nm. The first distance 116 is 10 nm. The selectivity of the reactive ion etching as the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the reactive ion etching as the further etching method for the dielectric layer A over the dielectric layer B is 0.2. The component 100 in Figure 4 is an opto-electronic component, more specifically a photodetector in accordance with the Example 2 above.

[0460] Figure 5 shows a cross-sectional scheme of another component 100 according to the invention. The description of Figure 1 applies identically to Figure 5 with the exception that the first electrical conductor layer 108 of the component in Figure 5 does not include the third region 115. Further, the layer sequence of the component 100 in Figure 5 additionally comprises a further electrical conductor layer 501. This further electrical conductor layer 501 is fully embedded in the dielectric layer B 104 at a further distance 504 from the optical element layer 105. Here, the first distance 116 is 10 nm and the further distance 504 is about 20 nm. In the view in the first direction 109, the first region 110 of the first electrical conductor layer 108, a first region 502 of the further electrical conductor layer 501 and the first region 111 of the optical element layer 105 overlap one another. Here, the first region 110 of the first electrical conductor layer 108 overlaps with the optical element layer 105 over an entire surface of the optical element layer 105 which faces towards the first side 101 of the component 100. Still in the view in the first direction 109, the first region 502 of the further electrical conductor layer 501 also overlaps with the optical element layer 105 over the entire surface of the optical element layer 105 which faces towards the first side 101 of the component 100. Still in the view in the first direction 109, the second region 114 of the first electrical conductor layer 108 neither overlaps with the further electrical conductor layer 501 nor with the optical element layer 105. The further electrical conductor layer 501 also includes a second region 503. Again in the view in the first direction 109, the second region 503 of the further electrical conductor layer 501 neither overlaps with the first electrical conductor layer 108 nor with the optical element layer 105. The component 100 in Figure 5 additionally comprises a further electrical connection 301. This further electrical connection 301 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103, partially through the dielectric layer B 104 and electrically connects to the second region 503 of the further electrical conductor layer 501. The further electrical connection 301 connects to a surface of the further electrical conductor layer 501, which faces towards the first side 101 of the component 100. Each of the first electrical connection 113 and the further electrical connection 301 is a via, which was obtained by filling a through-hole with a liner of titanium and a tungsten filling. The through-holes are circular in cross-section and each have a diameter of 500 nm. The dielectric layer A 103 consists of SiCE and has a layer thickness of 30 nm. The dielectric layer B 104 consists of AI2O3 and has a layer thickness of about 40 nm. The dielectric layer C 106 consists of SiCE and has a layer thickness of 3,500 nm. The optical element layer 105 is a waveguide which consists of SiN. The layer thickness of the optical element layer 105 is 350 nm. Each of the first electrical conductor layer 108 and the further electrical conductor layer 501 is a graphene sheet, which is a single atomic carbon layer thick, i.e., has a thickness of less than 1 nm. The selectivity of the reactive ion etching as the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of the atomic layer etching as the further etching method for the dielectric layer A over the dielectric layer B is 0. E The component 100 in Figure 5 is an opto-electronic component, more specifically a modulator in accordance with the Example 3 above.

[0461] Figure 6 shows a cross-sectional scheme of another component 100 according to the invention. The component 100 of Figure 6 is identical with the component 100 in Figure 5, except that the first electrical connection 113 does not connect to a surface of the first electrical conductor layer 108, which faces towards the first side 101 of the component 100, and the further electrical connection 301, also does not connect to a surface of the further electrical conductor layer 301, which faces towards the first side 101 of the component 100. Rather, the first electrical conductor layer 108 extends through the second region 114 of the first electrical conductor layer 108 in the first direction 109 and thereby electrically connects to the first electrical conductor layer 108. The further electrical conductor layer 301 extends through the second region 503 of the further electrical conductor layer 501 in the first direction 109 and thereby electrically connects to the further electrical conductor layer 501. The component 100 in Figure 6 is an opto-electronic component, more specifically a modulator in accordance with the Example 4 above. Here, the selectivity of the reactive ion etching as the first etching method for the dielectric layer A over the dielectric layer B is 50. The selectivity of reactive ion etching as the further etching method for the dielectric layer A over the dielectric layer B is 0.2.

[0462] Figure 7 shows a flow chart of a method 700 according to the invention. In a method step A. 701, a component precursor 800 is provided. This component precursor 800 comprises a layer sequence, including a dielectric layer A 103, a dielectric layer B 104 and an optical element layer 105 superimposed on one another in the given order from a first side 801 of the component precursor 800 to a further side 802 of the component precursor 800, which is opposite to the first side 801. The dielectric lay er A 103 is less resistant to a first etching method than the dielectric layer B 104, and the dielectric layer B 104 is less resistant to a further etching method than the dielectric layer A 103. The layer sequence further comprises a first electrical conductor layer 108. In a view in a first direction 109, which runs from the first side 801 to the further side 802, a first region 110 of the first electrical conductor layer 108 and a first region 111 of the optical element layer 105 overlap one another. A first layer surface 112 of the dielectric layer A 103 faces away from the dielectric layer B 104. A first through-hole 803 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103. In a method step B. 702, the first through-hole 803 is extended at least to the first electrical conductor layer 108 by the further etching method. In a method step C. 703, the first through-hole 803 is filled or coated with a first electrically conductive material 1001 to obtain a first electrical connection 113, which extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103 and partially through the dielectric layer B 104 and electrically connects to the first electrical conductor layer 108. Figure 8 shows a cross-sectional scheme of a component precursor 800 as provided in step A. 701 of a method 700 according to the invention. The component precursor 800 is a precursor of the component 100 in Figure 1. Accordingly, the component precursor 800 comprises a layer sequence, including the dielectric layer A 103, the dielectric layer B 104 with first electrical conductor layer 108 embedded in it, and the embedded optical element layer 107, formed by the dielectric layer C 106 and the optical element layer 105. The dielectric layer A 103, the dielectric layer B 104 and the embedded optical element layer 107 are superimposed on one another in the given order from a first side 801 of the component precursor 800 to a further side 802 of the component precursor 800, which is opposite to the first side 801. A first through-hole 803 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103.

[0463] Figure 9 shows an illustration of step B. 702 of the method 700 as referred to in regard of Figure 8. In the method step B. 702, the first through -hole 803 was extended partially through the dielectric layer B 104 to a surface of the first electrical conductor layer 108, which faces the first side 801. For this purpose, the further etching method was used.

[0464] Figure 10 shows an illustration of step C. 703 of the method 700 as referred to in regard of Figures 8 and 9. In the method step C. 703, the first through-hole 803 was filled with a first electrically conductive material 1001. Removing superfluous electrically conductive material on the first surface 112 of the dielectric layer A 103 results in the component 100 of Figure 1 with the first electrical connection 113, which extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103 and partially through the dielectric layer B 104 and electrically connects to the surface of the first electrical conductor layer 108, which faces the first side 801.

[0465] Figure 11 shows a cross-sectional scheme of a component precursor 800 as provided in step A. 701 of a method 700 according to the invention. The component precursor 800 is a precursor of the component 100 in Figure 2. Accordingly, the component precursor 800 comprises a layer sequence, including the dielectric layer A 103, the dielectric layer B 104 with first electrical conductor layer 108 embedded in it, and the embedded optical element layer 107, formed by the dielectric layer C 106 and the optical element layer 105. The dielectric layer A 103, the dielectric layer B 104 and the embedded optical element layer 107 are superimposed on one another in the given order from a first side 801 of the component precursor 800 to a further side 802 of the component precursor 800, which is opposite to the first side 801. A first through-hole 803 extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103.

[0466] Figure 12 shows an illustration of step B. 702 of the method 700 as referred to in regard of Figure 11. In the method step B. 702, the first through-hole 803 was extended partially through the dielectric layer B 104 and through the first electrical conductor layer 108. For this purpose, the further etching method was used. Figure 13 shows an illustration of step C. 703 of the method 700 as referred to in regard of Figures 11 and 12. In the method step C. 703, the first through-hole 803 was filled with a first electrically conductive material 1001. Removing superfluous electrically conductive material on the first surface 112 of the dielectric layer A 103 results in the component 100 of Figure 2 with the first electrical connection 113, which extends from the first layer surface 112 of the dielectric layer A 103 through the dielectric layer A 103, partially through the dielectric layer B 104 and through the first electrical conductor layer 108 and thereby electrically connects to the first electrical conductor layer 108.

[0467] Figure 14a) to 14f) show illustrations of steps A] 1401 to F] 1405 of a method 700 according to the invention. This method 700 may be the method 700 as referred to in regard of Figures 8 to 10 or the method 700 as referred to in regard of Figures 11 to 13. Figure 14a) shows the component precursor 800 from Figure 8 or 11, in each case without the first through-hole 803. Figure 14b) shows the result of method step A] 1401. A photoresist layer 1406 was applied to the dielectric layer A 103 on a side of the dielectric layer A 103, which is opposite the dielectric layer B 104. Figure 14c) illustrates method step B] 1402. A mask 1407 with an opening 1408 was placed on the photoresist layer 1406. Through the opening 1408, a region of the photoresist layer 1406 is irradiated with ultraviolet radiation 1409. Figure 14d) shows the result of method step C] 1403. The photoresist layer 1406 was developed. This means that the region of the photoresist layer 1406 was removed. Thereby a first auxiliary through -hole 1410 in the photoresist layer 1406 was obtained. Figure 14e) illustrates method step D] 1404. A first etchant 1411 is introduced into the first auxiliary through-hole 1410 and the first through-hole 803 is formed in the dielectric layer A 103. Figure 14f) shows the result of method step E] 1405. The photoresist layer 1406 was removed, thereby obtaining the component precursor 800 in Figure 8 or 11.

[0468] Figure 15 shows a scheme of an electronic device 1500 according to the invention. The electronic device 1500 comprises the component 100 of Figure 4, a first integrated circuit 1501 and a further integrated circuit 1502. The first integrated circuit 1501 and the further integrated circuit 1502 are arranged and adapted to communicate with one another via a waveguide 1503 and the component 100.

[0469] Figure 16a) to 16f) show illustrations of a method for producing a component, where neither the method nor the component is according to the invention. The component precursor shown in cross-section in Figure 16a) is provided. This component precursor comprises a layer sequence which includes a layer of AI2O3 1601 and a layer of SiCE 1602 superimposed on one another. A waveguide of SiN is partially embedded in the layer of S1O2 1602. The layer sequence further comprises a graphene sheet 1604, which is fully embedded in the layer of AI2O3 1601. Figure 16b) shows that a photoresist layer 1406 was applied to the layer of AI2O3 1601. In Figure 16c), a mask 1407 with an opening 1408 was placed on the photoresist layer 1406. Through the opening 1408, a region of the photoresist layer 1406 is irradiated with ultraviolet radiation 1409. The photoresist layer 1406 is developed, i.e., the region of the photoresist layer 1406 is removed. Thereby, a through-hole 1605 in photoresist is obtained as illustrated in Figure 16d). As illustrated in Figure 16e), an etchant 1606 is introduced into the through-hole 1605 to etch a through-hole 1607 into the layer of AI2O3 1601. This through-hole 1607 extends to a surface of the graphene sheet 1604 which faces upwards in Figure 16e). The remainders of the photoresist layer 1406 are removed by an oxygen plasma and rinsing with acetone to obtain the situation in Figure 16f). The through-hole 1607 is filled with a titanium liner by PVD and then with a metal fill of tungsten 1608 by CVD. Superfluous tungsten 1608 on the layer of AI2O3 1601 is removed by by a dry etch after a lithographic contact definition to obtain the component in Figure 16h) with via 1609.

[0470] Figure 17a) to 17h) show illustrations of a further method for producing a component, where neither the method nor the component is according to the invention. This method is identical with the method illustrated in Figures 16a) to 16h), except that the through-hole 1607 is not etched to stop at the surface of the graphene sheet 1604 which faces upwards, but is etched through the graphene sheet 1604 as shown in Figure 17e). Accordingly, in Figure 17h), the via 1609 also extends through the graphene sheet 1604.

[0471] REFERENCE LIST 00 component according to the invention

[0472] 101 first side of the component

[0473] 102 further side of the component

[0474] 103 dielectric layer A

[0475] 104 dielectric layer B

[0476] 105 optical element layer

[0477] 106 dielectric layer C

[0478] 107 embedded optical element layer

[0479] 108 first electrical conductor layer

[0480] 109 first direction

[0481] 110 first region of the first electrical conductor layer

[0482] 111 first region of the optical element layer

[0483] 112 first layer surface of the dielectric layer A

[0484] 113 first electrical connection

[0485] 114 second region of the first electrical conductor layer

[0486] 115 third region of the first electrical conductor layer

[0487] 116 first distance 01 further electrical connection 01 further electrical conductor layer 02 first region of the further electrical conductor layer 03 second region of the further electrical conductor layer 04 further distance 00 method according to the invention

[0488] 701 method step A.

[0489] 702 method step B.

[0490] 703 method step C.

[0491] 800 component precursor

[0492] 801 first side of the component precursor

[0493] 802 further side of the component precursor

[0494] 803 first through-hole

[0495] 1001 first electrically conductive material

[0496] 1401 method step A]

[0497] 1402 method step B] 1403 method step C]

[0498] 1404 method step D]

[0499] 1405 method step E]

[0500] 1406 photoresist layer

[0501] 1407 mask

[0502] 1408 opening

[0503] 1409 ultraviolet radiation

[0504] 1410 first auxiliary through-hole

[0505] 1411 first etchant

[0506] 1500 electronic device according to the invention

[0507] 1501 first integrated circuit

[0508] 1502 further integrated circuit

[0509] 1503 waveguide

[0510] 1601 layer of AI2O3

[0511] 1602 layer of SiC>23

[0512] 1603 waveguide of SiN

[0513] 1604 graphene sheet

[0514] 1605 through-hole in photoresist

[0515] 1606 etchant

[0516] 1607 through-hole in layer of SiCE

[0517] 1608 tungsten

[0518] 1609 via

[0519] 2000 First assembly

[0520] 2001 First sub-assembly

[0521] 2002 First component

[0522] 2003 Second component

[0523] 2004 First integrated circuit

[0524] 2005 First data storage means

[0525] 2006 First light emitting means

[0526] 2007 Further sub-assembly

[0527] 2008 Further component

[0528] 2009 Even-further component

[0529] 2010 Further integrated circuit

[0530] 2011 Further data storage means 2012 Further light emitting means

[0531] 2100 Optical sensing module

[0532] 2101 First component

[0533] 2102 Target area

[0534] 2103 Sensing means

[0535] 2104 Optics

[0536] 2105 Integrated circuit

[0537] 2106 Light emitting means

[0538] 2200 Apparatus adapted and arranged for a medical application

[0539] 2201 First component

[0540] 2202 Further component

[0541] 2203 First light emitting means

[0542] 2204 First integrated circuit

[0543] 2205 Sensing unit

[0544] 2300 Vehicle adapted and arranged for flight

[0545] 2301 First component

[0546] 2302 First light emitting means

[0547] 2303 Further component

[0548] 2304 First integrated circuit

[0549] 2305 Propulsion means

[0550] 2306 Means to generate lift

[0551] 2307 Control system

[0552] 2308 Sensing unit

[0553] 2400 Robotic system

[0554] 2401 First component

[0555] 2402 Light emitting means

[0556] 2403 Further component

[0557] 2404 First integrated circuit

[0558] 2405 Robotic body

[0559] 2406 Sensing unit 2407 Control module

[0560] 2408 External entity

[0561] 2500 Second assembly adapted and arranged for optical computing

[0562] 2501 Optical memory unit

[0563] 2502 Optical processor

[0564] 2503 Data communication module

[0565] 2504 Component

[0566] 2600 Third assembly

[0567] 2601 Homomorphic operation module

[0568] 2602 Photonic encryption module

[0569] 2603 Photonic decryption module

[0570] 2604 Component

[0571] 2606 Light emitting means

[0572] 2700 Optical connection module

[0573] 2701 First component

[0574] 2702 Further component

[0575] 2703 Waveguide

[0576] 2704 Light emitting means

[0577] 2705 Integrated circuit

[0578] 2800 First transportation means

[0579] 2801 First component

[0580] 2802 Further component

[0581] 2803 Sensing unit

[0582] 2804 Processing module

[0583] 2805 Perception sub-module

[0584] 2806 Generation sub-module

[0585] 2807 Human-machine interface

[0586] 2808 Control unit

[0587] 2809 Steering means

[0588] 2810 Propulsion means 2811 First integrated circuit

[0589] 2812 First light emitting means

[0590] 2900 Further transportation means

[0591] 2901 First component

[0592] 2902 Further component

[0593] 2903 Steering means

[0594] 2904 Propulsion means

[0595] 3000 Fourth assembly

[0596] 3001 Memory unit

[0597] 3002 Processor

[0598] 3003 Component

[0599] 3100 Optical data communication module

[0600] 3101 First component

[0601] 3102 Light emitting means

[0602] 3103 Further component

[0603] 3104 Integrated circuit

Claims

CLAIMS1. A component (100), comprising a layer sequence, including at least the following layers superimposed on one another in the given order from a first side (101) of the component (100) to a further side (102) of the component (100), which is opposite to the first side (101): a. a dielectric layer A (103), b. a dielectric layer B (104), and c. an optical element layer (105); wherein the layer sequence further comprises a first electrical conductor layer (108); wherein, in a view in a first direction (109), which runs from the first side (101) to the further side (102), at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap one another; wherein a first layer surface (112) of the dielectric layer A (103) faces away from the dielectric layer B (104); wherein a first electrical connection (113) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and electrically connects to the first electrical conductor layer (108); wherein the dielectric layer A (103) is less resistant to a first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less resistant to a further etching method than the dielectric layer A (103).

2. The component (100) according to claim 1, wherein at last one of the following applies: a| a selectivity of the first etching method for the dielectric layer A (103) over the dielectric layer B (104) is more than 1 ; b| a selectivity of the first etching method for the dielectric layer B (104) over the dielectric layer A (103) is less than 1 ; c| a selectivity of the further etching method for the dielectric layer A (103) over the dielectric layer B (104) is less than 1 ; d| a selectivity of the further etching method for the dielectric layer B (104) over the dielectric layer A (103) is more than 1.

3. The component (100) according to claim 1 or 2, wherein the first electrical conductor layer (108) has a layer thickness of less than 1 pm.

4. The component (100) according to any of the preceding claims, wherein a further electrical connection (301) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and electrically connects to the first electrical conductor layer (108).

5. The component (100) according to any of the preceding claims, wherein the layer sequence further comprises a further electrical conductor layer (501); wherein, in the view in the first direction (109) at least the first region (110) of the first electrical conductor layer (108), at least a first region (502) of the further electrical conductor layer (501) and at least the first region (111) of the optical element layer (105) overlap one another; wherein a further electrical connection (301) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and electrically connects to the further electrical conductor layer (501).

6. The component (100) according to any of the preceding claims, wherein the first electrical conductor layer (108) is at least partially embedded in the dielectric layer B (104) at a first distance (116) from the optical element layer (105).

7. The component (100) according to claim 6, wherein the further electrical conductor layer (501) is at least partially embedded in the dielectric layer B (104) at a further distance (504) from the optical element layer (105); wherein the first distance (116) is more than the further distance (504).

8. The component (100) according to any of the preceding claims, wherein the optical element layer (105) is at least partially embedded in a dielectric layer C (106); wherein the dielectric layer C (106) is a layer of the layer sequence and follows the dielectric layer B (104) in the first direction (109).

9. The component (100) according to any of the preceding claims, wherein at least one of the following applies: a] the first electrical conductor layer (108) includes a second region (114), which, in the view in the first direction (109), does not overlap with the further electrical conductor layer (501), or does not overlap with the optical element layer (105), or does not overlap with any of both;b] the first electrical conductor layer (108) includes a third region (115), which, in the view in the first direction (109), does not overlap with the further electrical conductor layer (501), or does not overlap with the optical element layer (105), or does not overlap with any of both; c] in the view in the first direction (109) the first region (110) of the first electrical conductor layer (108) overlaps with the optical element layer (105) over an entire surface of the optical element layer (105) which faces towards the first side (101) of the component (100); d] the further electrical conductor layer (501) includes a second region (503), which, in the view in the first direction (109), does not overlap with the first electrical conductor layer (108), or does not overlap with the optical element layer (105), or does not overlap with any of both; e] in the view in the first direction (109) the first region (502) of the further electrical conductor layer (501) overlaps with the optical element layer (105) over the entire surface of the optical element layer (105) which faces towards the first side (101) of the component (100).

10. The component (100) according to claim 9, wherein one or two of the following applies: a# the first electrical connection (113) electrically connects to the second region (114) of the first electrical conductor layer (108); b# the further electrical connection (301) electrically connects to the third region (115) of the first electrical conductor layer (108); c# the further electrical (301) connection electrically connects to the second region (503) of the further electrical conductor layer (501).

11. The component (100) according to any of the preceding claims, wherein one or two of the following applies: a~ the first electrical connection (113) connects to a surface of the first electrical conductor layer (108), which faces towards the first side (101) of the component (100); b~ the further electrical connection (301) connects to the surface of the first electrical conductor layer (108), which faces towards the first side (101) of the component (100); c~ the further electrical connection (301) connects to a surface of the further electrical conductor layer (501), which faces towards the first side (101) of the component (100); d~ the first electrical connection (113) extends through the first electrical conductor layer (108) in the first direction (109); e~ the further electrical connection (301) extends through the first electrical conductor layer (108) in the first direction (109); f~ the further electrical connection (301) extends through the further electrical conductor layer (501 ) in the first direction (109).

12. The component (100) according to any of the preceding claims, wherein the first electrical conductor layer (108), or the further electrical conductor layer (501), or each of both is a graphene sheet.

13. The component (100) according to any of the preceding claims, wherein the optical element layer (105) is one selected from the group consisting of a waveguide, a grating, a prism, a lens, and a coupler, or a combination of at least two thereof14. A method (700) comprising as method steps in the following order:A. providing a component precursor (800), comprising a layer sequence, including at least the following layers superimposed on one another in the given order from a first side (801) of the component precursor (800) to a further side (802) of the component precursor (800), which is opposite to the first side (801):I. a dielectric layer A (103),II. a dielectric layer B (104), andIII. an optical element layer (105); wherein the dielectric layer A (103) is less resistant to a first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less resistant to a further etching method than the dielectric layer A (103); wherein the layer sequence further comprises a first electrical conductor layer (108); wherein, in a view in a first direction (109), which runs from the first side (801) to the further side (802), at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap one another; wherein a first layer surface (112) of the dielectric layer A (103) faces away from the dielectric layer B (104); wherein a first through-hole (803) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103);B. extending the first through-hole (803) at least to the first electrical conductor layer (108) by the further etching method; andC. introducing a first electrically conductive material (1001) into the first through-hole (803) to obtain a first electrical connection (113), which extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and electrically connects to the first electrical conductor layer (108).

15. The method (700) according to claim 14, wherein the method step A. includes forming the first through- hole (803) in dielectric layer A (103) by the first etching method.

16. An electronic device (1500), comprising the component (100) according to any of the claims 1 to 13, or a component (100) obtainable by the method (700) according to claim 14 or 15.

17. A use of the component (100) according to any of the claims 1 to 13, or a component (100) obtainable by the method (700) according to claim 14 or 15 for producing an electronic device (1500).

18. A use of the component (100) according to any of the claims 1 to 13, or a component (100) obtainable by the method according to claim 14 or 15 for a establishing a communication between a first integrated circuit (1501) and a further integrated circuit (1501); b establishing a communication between a first part of an integrated circuit and a further part of the integrated circuit; or c injecting an optical vector in an optical network and / or reading out an optical vector from an optical network.

Images