Surface light-emitting element and manufacturing method for surface light-emitting element

Abstract

Provided is a surface light-emitting element capable of reducing deviation in form, from a desired form, of an oxidation constriction layer.　A surface light-emitting element according to the present technology comprises a light-emitting element part including a first structure that includes a first semiconductor structure, a second structure that is laminated with the first structure and that includes a second semiconductor structure, and a light-emitting layer disposed between the first and second structures. An oxidation constriction layer is provided in the first structure and / or the second structure. The oxidation constriction layer has a non-oxidation region and an oxidation region surrounding the non-oxidation region. A plurality of holes which are each provided with a solid layer or a gas layer and which each penetrate through the oxidation region are formed on the surface of the light-emitting element part on the second structure side. The oxidation region has a plurality of oxidation parts individually corresponding to the plurality of holes. The oxidation width of each of the plurality of oxidation parts is less than 1 / 2 of the average inner diameter in the oxidation region.

Description

Surface light emitting device and method for manufacturing the surface light emitting device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device and a method for manufacturing the surface light emitting device.

[0002] 2. Description of the Related Art Conventionally, there are known surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, which have an oxidized constriction layer in which a non-oxidized region is surrounded by an oxidized region.

[0003] For example, the oxidized constriction layer of the surface light emitting device described in Patent Document 1 has an oxidized region having a plurality of oxidized portions with a relatively large oxidized width.

[0004] Japanese Patent Application Publication No. 10-229248

[0005] Proceedings of SPIE-The International Society for Optical Engineering February 2009 Proc. of SPIE Vol. 7229 722905-1 “More VCSELs at Finisar”

[0006] However, for example, in Patent Document 1 and Non-Patent Document 1, there is room for improvement in terms of reducing the deviation of the shape of the oxidized constriction layer from the desired shape.

[0007] Therefore, a main object of the present technology is to provide a surface light emitting device that can reduce the deviation of the shape of the oxide constriction layer from a desired shape.

[0008] The present technology provides a surface light emitting device comprising: a first structure including a first semiconductor structure; a second structure stacked on the first structure and including a second semiconductor structure; and a light emitting layer disposed between the first and second structures; an oxidation constriction layer provided in the first structure and / or the second structure; the oxidation constriction layer having a non-oxidized region and an oxidation region surrounding the non-oxidized region; a plurality of holes each having a solid or gas layer formed therein and penetrating the oxidation region on a surface of the light emitting element portion facing the second structure, the plurality of holes penetrating the oxidation region; the oxidation region having a plurality of oxidized portions through which the plurality of holes individually penetrate; and a radial width of each of the plurality of oxidized portions being less than half of an average inner diameter of the oxidized region. The width may be equal to or less than one-third of the average inner diameter. Each of the plurality of oxidized portions may surround a corresponding hole. Each of the plurality of oxidized portions may be annular in a planar view. Two of the oxidized portions individually corresponding to two adjacent holes may partially overlap each other. The plurality of holes may be arranged to surround the non-oxidized region. The plurality of holes may include at least one hole group where the plurality of holes are arranged circumferentially to surround the non-oxidized region. The plurality of holes may include a plurality of the hole groups arranged radially of the oxidized region. The plurality of oxidized portions may be arranged to surround the non-oxidized region. The plurality of oxidized portions may include at least one oxidized portion group where the plurality of oxidized portions are arranged circumferentially to surround the non-oxidized region. The plurality of oxidized portions may include a plurality of the oxidized portion groups arranged radially of the oxidized region. The oxidized region may include another oxidized portion surrounding the plurality of oxidized portions. The oxidized portion and the another oxidized portion may have different thicknesses. The another oxidized portion may be thicker than the oxidized portion. The light-emitting element portion may be provided with an insulating region surrounding at least an inner peripheral end of the region where the plurality of oxidized portions are arranged. A portion of an electrode may be provided on a surface of the light-emitting element portion facing the second structure, and another portion of the electrode may be provided in the hole via an insulating film.The oxidized constriction layer may be provided in the second structure, and a bottom surface of the hole may be located in the first structure or the second structure. The oxidized constriction layer may be provided in the first structure, and a bottom surface of the hole may be located in the first structure. A plurality of the oxidized constriction layers may be stacked, and the hole may penetrate the oxidized region of each of the plurality of oxidized constriction layers. The present technology also provides a method for manufacturing a surface light emitting device, including: stacking a plurality of layers including a light emitting layer and an oxidizable layer on a substrate to produce a stacked body; forming a plurality of holes on a surface of the stacked body opposite to the substrate side, the plurality of holes each penetrating the oxidizable layer; and oxidizing the oxidizable layer from a side exposed to each of the plurality of holes.

[0009] FIG. 1 is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 2 is a plan view of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of an oxidized constriction layer of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 4 is a flowchart for describing an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 1 is a cross-sectional view of a surface light-emitting device according to Example 2 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of a surface light-emitting device according to Example 3 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a surface light-emitting device according to Example 4 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light-emitting device according to Example 5 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a surface light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 6 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a surface light-emitting device according to Example 7 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of a surface light-emitting device according to Example 9 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a surface light-emitting device according to Example 10 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of a surface light-emitting device according to Example 12 of an embodiment of the present technology.FIG. 10 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 13 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 14 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 15 of an embodiment of the present technology. FIG. 13 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 16 of an embodiment of the present technology. FIG. 14 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 17 of an embodiment of the present technology. FIG. 15 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 16 of an embodiment of the present technology. FIG. 16 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 17 of an embodiment of the present technology. FIG. 17 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 18 of an embodiment of the present technology. FIG. 18 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 19 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 20 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 21 of an embodiment of the present technology. FIG. 19 is a cross-sectional view of an oxidized constriction layer of a surface light-emitting device according to Example 22 of an embodiment of the present technology. FIG. 19 is a FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measurement device.

[0010] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below are representative embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when it is described in this specification that a surface light-emitting device and a method for manufacturing a surface light-emitting device according to the present technology have multiple effects, it is sufficient that the surface light-emitting device and a method for manufacturing a surface light-emitting device according to the present technology have at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0011] The description will be made in the following order: 0. Introduction 1. Surface-light-emitting device according to Example 1 of one embodiment of the present technology 2. Surface-light-emitting device according to Example 2 of one embodiment of the present technology 3. Surface-light-emitting device according to Example 3 of one embodiment of the present technology 4. Surface-light-emitting device according to Example 4 of one embodiment of the present technology 5. Surface-light-emitting device according to Example 5 of one embodiment of the present technology 6. Surface-light-emitting device according to Example 6 of one embodiment of the present technology 7. Surface-light-emitting device according to Example 7 of one embodiment of the present technology 8. Surface-light-emitting device according to Example 8 of one embodiment of the present technology 9. Surface-light-emitting device according to Example 9 of one embodiment of the present technology 10. Surface-light-emitting device according to Example 10 of one embodiment of the present technology 11. Surface-light-emitting device according to Example 11 of one embodiment of the present technology 12. Surface-light-emitting device according to Example 12 of one embodiment of the present technology 13. Surface-light-emitting device according to Example 13 of one embodiment of the present technology 14. Surface-light-emitting device according to Example 14 of one embodiment of the present technology 15. Surface-light-emitting device according to Example 15 of one embodiment of the present technology 16. Surface-light-emitting device according to Example 16 of one embodiment of the present technology 17. Surface light emitting device according to Example 17 of an embodiment of the present technology 18. Surface light emitting device according to Example 18 of an embodiment of the present technology 19. Surface light emitting device according to Example 19 of an embodiment of the present technology 20. Surface light emitting device according to Example 20 of an embodiment of the present technology 21. Surface light emitting device according to Example 21 of an embodiment of the present technology 22. Surface light emitting device according to Example 22 of an embodiment of the present technology 23. Modification of the present technology 24. Application example to electronic device 25. Example of application of surface light emitting device to distance measurement device 26. Example of distance measurement device mounted on a moving body

[0012] <1. Introduction>

[0013] In conventional surface-emitting devices such as surface-emitting lasers and light-emitting diodes, an oxide constriction layer, in which a non-oxidized region is surrounded by an oxidized region, is an essential structure for improving light-emitting characteristics. However, because the formation process is controlled by the oxidation time under certain oxidation conditions, it has been extremely difficult to stably control the morphology of the oxide constriction layer (the dimensions and shape of the oxidized region). Furthermore, including oxidation variations within the wafer surface, it has been even more difficult to form an oxide constriction layer with a small oxide constriction diameter (the inner diameter of the oxidized region) required for next-generation products.

[0014] Among conventional surface light emitting devices, there are some that have an oxidation constriction layer in which the oxidation region has a plurality (relatively few) of oxidation parts with a relatively large oxidation width (see, for example, Patent Document 1 and Non-Patent Document 1).

[0015] However, even in this surface light emitting device, the deviation of the shape of the oxidized constriction layer (the dimensions and shape of the oxidized region) from the desired shape is not small, and there is room for improvement in the controllability of the shape of the oxidized constriction layer.

[0016] Therefore, after extensive research, the inventors have succeeded in dramatically improving the controllability of the morphology of the oxidized constriction layer by achieving an appropriate relationship between the oxidized constriction diameter (the inner diameter of the oxidized region) and the oxidized width of the oxidized region in a surface-emitting device having an oxidized constriction layer with a plurality of oxidized portions. This is a new discovery by the inventors.

[0017] The inventors then developed a surface-emitting device according to the present technology as a surface-emitting device that embodies this new finding. The surface-emitting device according to the present technology can provide a surface-emitting device that can reduce the deviation of the shape of the oxidized constriction layer (the dimensions and shape of the oxidized region) from the desired shape.

[0018] Furthermore, the inventors have developed a method for manufacturing a surface light emitting device according to the present technology, which embodies this new finding. The method for manufacturing a surface light emitting device according to the present technology makes it possible to manufacture a surface light emitting device in which the deviation of the shape of the oxidized constriction layer (the dimensions and shape of the oxidized region) from the desired shape can be reduced.

[0019] Hereinafter, several examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in cross-sectional views such as Fig. 1, the upper side will be referred to as "upper" and the lower side will be referred to as "lower" as appropriate.

[0020] 1. Surface light emitting device according to Example 1 of an embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0021] <Configuration of Surface Light Emitting Device> (Overall Configuration) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Figures 1 and 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL.

[0022] The surface light emitting element 10 is driven by, for example, a driver (drive circuit), which includes, for example, a power supply and a transistor that controls the on / off of the power supply to the surface light emitting element 10.

[0023] The surface light emitting element 10 has, as an example, a light emitting element portion LE.

[0024] The light-emitting element unit LE includes a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 stacked on the first structure ST1 and including a second semiconductor structure SS2, and a light-emitting layer 104 disposed between the first and second structures ST1, ST2. Hereinafter, the direction in which the first and second structures ST1, ST2 are stacked (the up-down direction) will also be referred to as the "stacking direction."

[0025] The first structure ST1 further includes, for example, a substrate 101 arranged on the opposite side (lower side) of the first semiconductor structure SS1 to the light emitting layer 104 side.

[0026] The first semiconductor structure SS1 includes, for example, a first semiconductor multilayer reflector 102 and a first cladding layer 103 stacked on top of each other. The first cladding layer 103 is disposed between the first semiconductor multilayer reflector 102 and the light-emitting layer 104.

[0027] The second semiconductor structure SS2 has a conductivity type different from that of the first semiconductor structure SS1. The second semiconductor structure SS2 is configured to include, for example, a second cladding layer 105 and a second semiconductor multilayer film reflector 107 stacked on top of each other. The second cladding layer 105 is disposed on the opposite side (upper side) of the light emitting layer 104 from the first cladding layer 103. The second semiconductor multilayer film reflector 107 is disposed on the opposite side (upper side) of the second cladding layer 105 from the light emitting layer 104.

[0028] An oxidized constriction layer 106 is provided in the second structure ST2. The oxidized constriction layer 106 is stacked on the light-emitting layer 104. The oxidized constriction layer 106 has a non-oxidized region 106a and an oxidized region 106b surrounding the non-oxidized region 106a, and defines a light-emitting region LA of the light-emitting layer 104. The light-emitting region LA is a region into which a current is injected (current injection region) and which emits light, corresponding to the non-oxidized region 106a in the light-emitting layer 104.

[0029] As described above, in the surface-emitting device 10, as an example, a first semiconductor multilayer film reflector 102, a first cladding layer 103, an emission layer 104, a second cladding layer 105, an oxide constriction layer 106, and a second semiconductor multilayer film reflector 107 are stacked in this order on a substrate 101.

[0030] In the surface-emitting device 10, the light-emitting layer 104 has a double heterostructure sandwiched in the stacking direction between first and second semiconductor structures SS1 and SS2 of different conductivity types, and holes and electrons can be radiatively recombined (radiatively recombined) in the light-emitting layer 104.

[0031] In the surface-emitting element 10, a resonator is configured including a light-emitting layer 104 and first and second semiconductor multilayer film reflectors 102 and 107 that sandwich the light-emitting layer 104 in the stacking direction. The surface-emitting element 10 emits laser light to the side of the second structure ST2 opposite to the light-emitting layer 104 side (the surface side (upper surface side) of the substrate 101).

[0032] As an example, a recessed portion DP that defines at least the mesa structure MS is provided on the surface of the light-emitting element portion LE facing the second structure ST2. Here, the recessed portion DP includes a notch DP1 and a groove DP2. The notch DP1 defines a circumferential portion (e.g., a majority portion) of the mesa structure MS, and the groove DP2 defines the remaining circumferential portion of the mesa structure MS and the lower portion of the first semiconductor multilayer film reflector 102 corresponding to the remaining portion. A buried layer 113 (insulating layer) is provided in the recessed portion DP. The mesa structure MS includes at least a portion (e.g., an upper portion) of the first semiconductor multilayer film reflector 102, the first cladding layer 103, the light-emitting layer 104, the second cladding layer 105, the oxide constriction layer 106, and the second semiconductor multilayer film reflector 107. The mesa structure MS is also referred to as a "light-emitting mesa." Here, the mesa structure MS has a circular planar shape (see FIG. 2 ), but may have other shapes, such as an ellipse or a polygon. The diameter of the mesa structure MS is, for example, several tens of μm (for example, 20 μm to 30 μm).

[0033] As an example, on the surface of the light-emitting element portion LE on the second structure ST2 side, i.e., on the mesa structure MS (more specifically, on the second semiconductor multilayer film reflector 107), an electrode portion 108a, which is a part of the anode electrode 108 (p-side electrode), is provided in a circumferential shape (e.g., ring shape) so as to surround the non-oxidized region 106a of the oxidized constriction layer 106 in plan view. The inner diameter side of the electrode portion 108a serves as an emission opening.

[0034] As an example, an electrode pad 111 spaced apart from the electrode portion 108a of the anode electrode 108 and an anode wiring 112 connecting the electrode pad 111 and the electrode portion 108a are provided on the buried layer 113 provided in the cutout DP1.

[0035] As an example, the cathode electrode 109 (n-side electrode) is provided so as to extend vertically in an electrode installation area EIA on the opposite side of the light emitting element portion LE of the buried layer 113 provided in the trench DP2. One end of the cathode electrode 109 is located on the substrate 101, and the other end is located at a height equal to or higher than the height of the electrode portion 108a of the anode electrode 108.

[0036] A plurality of holes (a plurality of first holes H1 and a plurality of second holes H2) in which, for example, a solid layer is provided are formed on the surface of the light-emitting element component LE on the second structure ST2 side, and each of the holes penetrates the oxidized region 106b of the oxidized constriction layer 106. As an example, the bottom surface of each first hole H1 is located within the second structure ST2, for example, at a position 0.1 μm or more below the bottom surface of the oxidized constriction layer 106 (for example, within the second cladding layer 105). As an example, the bottom surface of each second hole H2 is located within the second structure ST2, for example, at a position 0.1 μm or more below the bottom surface of the oxidized constriction layer 106 (for example, within the second cladding layer 105).

[0037] In each first hole H1, a first extension portion 108b1, which is the other part of the anode electrode 108, is provided via an insulating film 114A. In each second hole H2, a second extension portion 108b2, which is the other part of the anode electrode 108, is provided via an insulating film 114B. As an example, each of the first and second extension portions 108b1, 108b2 is circular in plan view, extends from the electrode portion 108a toward the substrate 101 (downward), and has its tip (lower end) located within the second cladding layer 105.

[0038] The anode electrode 108 can efficiently transfer heat generated in the light-emitting layer 104 to the electrode portion 108a via the first extension portions 108b1 and the second extension portions 108b2, and can efficiently dissipate the heat from the electrode portion 108a to the outside.

[0039] As an example, the surface light emitting element 10 is mounted on a mounting substrate (for example, a drive substrate having a driver, a wiring substrate connected to the driver, etc.) with the junction facing up.

[0040] (Substrate) The substrate 101 is, for example, a substrate made of a compound semiconductor, such as an n-GaAs substrate.

[0041] (First Semiconductor Multilayer Reflector) The first semiconductor multilayer reflector 102 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with n-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The first semiconductor multilayer reflector 102 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 104. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers be as large as possible. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) in the first semiconductor multilayer film reflector 102 include Si, Se, and Ge. The first semiconductor multilayer film reflector 102 is set to have a slightly higher reflectivity than the second semiconductor multilayer film reflector 107.

[0042] (First Cladding Layer) The first cladding layer 103 is made of a compound semiconductor, such as n-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0043] (Light-Emitting Layer) The light-emitting layer 104 is made of, for example, a compound semiconductor having a smaller band gap energy than the first and second cladding layers 103 and 105. The light-emitting layer 104 is made of, for example, a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light-emitting layer 104 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The emission wavelength of the light-emitting layer 104 is set to, for example, about 600 to 1100 nm. The light-emitting layer 104 is also called an "active layer." The light-emitting layer 104 is preferably disposed at or near the antinode of a standing wave generated in the resonator.

[0044] (Second Cladding Layer) The second cladding layer 105 is made of a compound semiconductor, such as p-AlGaAs, for example. The "cladding layer" is also called a "spacer layer."

[0045] (Oxidized Constriction Layer) As an example, the oxidized constriction layer 106 is disposed between the second cladding layer 105 and the second semiconductor multilayer reflector 107. The oxidized constriction layer 106 may be provided in the second cladding layer 105 or in the second semiconductor multilayer reflector 107.

[0046] For example, the oxidized constriction layer 106 has a non-oxidized region 106 a and an oxidized region 106 b surrounding the non-oxidized region 106 a. The outer shape (shape in plan view) of the non-oxidized region 106 a is determined by the inner circumferential shape of the oxidized region 106 b. The oxidized constriction layer 106 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0047] The non-oxidized region 106a corresponds to the light-emitting region LA of the light-emitting layer 104 and functions as a current / light passing region. The non-oxidized region 106a includes, for example, an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The non-oxidized region 106a preferably has an Al composition of 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more.

[0048] The oxidized region 106b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 106a. The oxidized region 106b has a higher resistance and a lower refractive index than the non-oxidized region 106a, and functions as a current / light confinement region. For example, the oxidized region 106b is made of an oxide containing Al (for example, Al ｘ O ｙ etc.)

[0049] By the way, when the optical confinement (optical confinement) is improved, the proportion of light that receives stimulated emission gain in the light-emitting layer 104 increases, and the effective optical gain becomes a high value. A high optical gain is essential to achieve high optical output and high-speed optical modulation, and the oxide confinement layer 106 is very suitable for improving characteristics. Furthermore, the oxide confinement layer 106 contributes to increasing the design freedom of the VCSEL as the surface-emitting device 10, for example, by adjusting the refractive index distribution, it is possible to select the transverse mode of laser oscillation and control the radiation angle of the laser light to the outside.

[0050] (Second Semiconductor Multilayer Reflector) The second semiconductor multilayer reflector 107 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The second semiconductor multilayer reflector 107 has a structure in which high-refractive index layers and low-refractive index layers with different refractive indices are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 104. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers is large. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 107 include Zn, Mg, Be, and C.

[0051] (Anode Electrode) The anode electrode 108 may have a single-layer structure or a laminated structure. The anode electrode 108 is made of at least one metal (including an alloy) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 108 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like.

[0052] The anode electrode 108 is electrically connected to the anode side of the driver. (Electrode Pad) The electrode pad 111 may have a single-layer structure or a multi-layer structure. The electrode pad 111 is made of at least one metal (including alloys) selected from the group consisting of Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the electrode pad 111 has a multi-layer structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, etc.

[0053] (Anode Wiring) The anode wiring 112 is made of plating containing, for example, Au, Ag, Cu, or the like.

[0054] (Cathode Electrode) The cathode electrode 109 may have a single-layer structure or a laminated structure. The cathode electrode 109 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 109 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like. The cathode electrode 113 is electrically connected to the cathode side of the driver.

[0055] (Insulating Film) Each insulating film 114A and each insulating film 114B are made of, for example, SiN, SiO ２ The insulating layer is made of a dielectric material such as SiON.

[0056] (Buried Layer) The buried layer 113 is made of a resin such as BCB (benzocyclobutene) or polyamide, or a material such as SiN or SiO ２ The insulating layer is made of a dielectric material such as SiON.

[0057] (Details of Oxidized Constriction Layer and Plural Holes) FIG. 3 is a cross-sectional view of the oxidized constriction layer 106 of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology.

[0058] As shown in FIG. 3 , the multiple holes (multiple first holes H1 and multiple second holes H2) are arranged to surround the non-oxidized region 106a. Specifically, the multiple first holes H1 include a first hole group H1G in which multiple first holes H1 are arranged in a circumferential (e.g., annular) shape to surround the non-oxidized region 106a, and the multiple second holes H2 include a second hole group H2G in which multiple second holes H2 are arranged in a circumferential (annular) shape to surround the non-oxidized region 106a. The first and second hole groups H1G and H2G are arranged in the radial direction of the oxidized region 106b. Here, the first hole group H1G is arranged on the inner diameter side of the second hole group H2G. Here, each of the first holes H1 and each of the second holes H2 is circular in plan view and has the same diameter (the same average inner diameter). The diameter of each of the first holes H1 and each of the second holes H2 is preferably 1 μm or less. 3, there are 10 first holes H1 and 16 second holes H2. Note that the planar shape of each of the first and second holes H1 and H2 may be other shapes, such as an ellipse or a polygon.

[0059] 3, the oxidized region 106b has a plurality of first oxidized portions 106b1 (a plurality of first oxidized portions 106b1 individually corresponding to a plurality of first holes H1) that are individually penetrated by a plurality of first holes H1, and a plurality of second oxidized portions 106b2 (a plurality of oxidized portions 106b2 individually corresponding to a plurality of second holes H2) that are individually penetrated by a plurality of second holes H2. The plurality of first oxidized portions 106b1 and the plurality of second oxidized portions 106b2 are substantially continuous and integral, and together they constitute a single oxidized region 106b.

[0060] Each of the multiple first oxidized portions 106b1 surrounds a corresponding first hole H1. Each of the multiple second oxidized portions 106b2 surrounds a corresponding second hole H2. The first oxidized portion 106b1 has a planar shape corresponding to the planar shape of the corresponding first hole H1. The second oxidized portion 106b2 has a planar shape corresponding to the planar shape of the corresponding second hole H2. Here, each of the first and second oxidized portions 106b1, 106b2 is annular, which is a planar shape corresponding to the circle, which is the planar shape of the corresponding hole. If the planar shape of the corresponding hole is, for example, elliptical, each oxidized portion may have an elliptical frame shape, or if the planar shape is, for example, polygonal, each oxidized portion may have a polygonal frame shape.

[0061] The multiple oxidized portions (multiple first oxidized portions 106b1 and multiple second oxidized portions 106b2) are arranged to surround the non-oxidized region 106a. Specifically, the multiple first oxidized portions 106b1 include a first oxidized portion group 106b1G in which multiple first oxidized portions 106b1 are arranged in a circumferential (e.g., annular) shape to surround the non-oxidized region 106a. The multiple second oxidized portions 106b2 include a first oxidized portion group 106b2G in which multiple second oxidized portions 106b2 are arranged in a circumferential (e.g., annular) shape to surround the non-oxidized region 106a. The first and second oxidized portion groups 106b1G, 106b2G are arranged radially of the oxidized region 106b, partially overlapping each other to prevent gaps. Here, the first oxidized portion group 106b1G is arranged roughly radially inward of the second oxidized portion group 106b2G.

[0062] Two first oxidized portions 106b1 corresponding to two adjacent first holes H1 respectively partially overlap. Two second oxidized portions 106b2 corresponding to two adjacent second holes H2 respectively partially overlap. The first and second oxidized portions 106b1, 106b2 corresponding to the adjacent first and second holes H1, H2 respectively partially overlap.

[0063] The oxidized region 106b further includes a third oxidized portion 106b3 (another oxidized portion) that is circumferential in plan view and surrounds the multiple oxidized portions (the multiple first oxidized portions 106b1 and the multiple second oxidized portions 106b2). The first and second oxidized portions 106b1, 106b2 and the third oxidized portion 106b3 have different thicknesses (see FIG. 1). Hereinafter, the third oxidized portion 106b3 is also referred to as the "circumferential oxidized portion."

[0064] As can be seen from the above explanation, the first oxidized portion group 106b1G forms the inner peripheral portion of the oxidized region 106b, the second oxidized portion group 106b2G forms the middle peripheral portion of the oxidized region 106b, and the third oxidized portion 106b3 forms the outer peripheral portion of the oxidized region 106b. In the example of Figure 3, the oxidized region 106b has a generally annular shape in plan view, the non-oxidized region 106a has a generally circular shape in plan view (center C), and the inner peripheral shape of the oxidized region 106b is also generally circular in plan view.

[0065] The oxidation width OW of each of the multiple oxidation portions (the multiple first oxidation portions 106b1 and the multiple second oxidation portions 106b2) is less than half the average inner diameter AID of the oxidized region 106b (the average diameter of the non-oxidized region 106a, also called the oxidation constriction diameter). The oxidation width OW of each oxidation portion is approximately the same. Here, the oxidation width OW of each oxidation portion means half the radial width of the oxidation portion or half the difference between the inner and outer diameters (the value obtained by subtracting the inner diameter from the outer diameter).

[0066] The inventors have confirmed through experiments that when the oxidation width OW is 1 / 2 or more of the average inner diameter AID, particularly when it exceeds 1 / 2, it becomes extremely difficult to uniformly control the oxidation width OW.

[0067] The oxidation width OW is preferably 1 / 3 or less of the average inner diameter AID, more preferably 1 / 4 or less of the average inner diameter AID, more preferably 1 / 5 or less of the average inner diameter AID, more preferably 1 / 6 or less of the average inner diameter AID, more preferably 1 / 7 or less of the average inner diameter AID, and more preferably 1 / 8 or less of the average inner diameter AID. Here, the oxidation width OW is 1 / 6 or more and less than 1 / 5 of the average inner diameter AID. The oxidation width OW is preferably 4 μm or less, more preferably 3 μm or less, more preferably 2 μm or less, and more preferably 1 μm or less.

[0068] The ratio of the average inner diameter of the first holes H1 corresponding to each first oxidized portion 106b1 to the oxidized width OW of that first oxidized portion 106b1 is preferably 1 / 4 or more, more preferably 1 / 3 or more, more preferably 1 / 2 or more, more preferably 1 or more, and even more preferably 3 / 2 or more. Here, this ratio is set to be greater than 1 / 2 and less than 1.

[0069] The ratio of the average inner diameter of the second holes H2 corresponding to each second oxidized portion 106b2 to the oxidized width OW of the second oxidized portion 106b2 is preferably 1 / 4 or more, more preferably 1 / 3 or more, more preferably 1 / 2 or more, even more preferably 1 or more, and even more preferably 3 / 2 or more. Here, this ratio is set to be greater than 1 / 2 and less than 1.

[0070] (Conditions for Adjacent Oxidized Portions to Partially Overlap) The ratio of the center-to-center distance L1 between two adjacent first holes H1 to the sum of the oxidized widths OW of the two first oxidized portions 106b1 and the average diameter of the first holes H1 is preferably less than 1, more preferably 0.9 or less, and even more preferably 0.8 or less. The ratio is preferably 0.5 or more, preferably 0.6 or more, and even more preferably 0.7 or more.

[0071] The ratio of the center-to-center distance L2 between two adjacent second holes H2 to the sum of the oxidation widths OW of the two second oxidized portions 106b2 and the average diameter of the second holes H2 is preferably less than 1, more preferably 0.9 or less, and even more preferably 0.8 or less. The ratio is preferably 0.5 or more, preferably 0.6 or more, and even more preferably 0.7 or more.

[0072] The ratio of the center-to-center distance L12 between adjacent first and second holes H1, H2 to the sum of the oxidation widths OW of the first and second oxidized portions 106b1, 106b2 and the sum of half the average diameters of the first and second holes H1, H2 is preferably less than 1, more preferably 0.9 or less, and even more preferably 0.8 or less. The ratio is preferably 0.5 or more, preferably 0.6 or more, and even more preferably 0.7 or more.

[0073] 1, the oxidized constriction layer 106 has, for example, a stacked structure (e.g., a three-layer structure) including first and second buffer layers BL1 and BL2 stacked on each other and an intermediate layer ML disposed between the first and second buffer layers BL1 and BL2. The "buffer layer" is also called a "stress relaxation layer."

[0074] A non-oxidized region 106a is provided in the central portion of the intermediate layer ML, multiple oxidized portions (multiple first oxidized portions 106b1 and multiple second oxidized portions 106b2) are provided in the inner peripheral portion surrounding the central portion of the intermediate layer ML, and another oxidized portion (third oxidized portion 106b3) is provided across the outer peripheral portion surrounding the inner peripheral portion of the intermediate layer ML and the outer peripheral portions of the first and second buffer layers BL1 and BL2. The central portion (non-oxidized region 106a) of the intermediate layer ML is made of a compound semiconductor with a high Al composition (e.g., AlGaAs, AlAs, etc.). The inner peripheral portion surrounded by the outer peripheral portions of each buffer layer is made of a compound semiconductor containing Al (e.g., AlGaAs, etc.). The Al composition of the inner peripheral portion of each buffer layer is slightly lower than the Al composition of the central portion (non-oxidized region 106a) of the intermediate layer ML.

[0075] <Operation of the Surface-Emitting Element> The operation of the surface-emitting element 10 will now be described. When a power supply voltage of the driver is applied to the light-emitting element unit LE, a current flows from the anode side of the driver to the light-emitting element unit LE via the anode electrode 108. The current flowing into the light-emitting element unit LE passes through the second semiconductor multilayer film reflector 107, is confined by the oxide constriction layer 106, and is injected into the light-emitting region LA of the light-emitting layer 104 via the second cladding layer 105. At this time, the light-emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 102 and 107 while being confined by the oxide constriction layer 106 and amplified in the light-emitting layer 104. When the oscillation conditions are satisfied, the light is emitted as laser light from the surface (top surface) of the light-emitting element unit LE. The current injected into the light-emitting region LA flows through the first cladding layer 103, the first semiconductor multilayer film reflector 102, the substrate 101, and the cathode electrode 109, in this order, to the cathode side of the driver.

[0076] <<Method for Manufacturing Surface Light Emitting Device>> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flowchart of Fig. 4. The overall flow is as follows: first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter, for convenience, also referred to as "substrate 101"), which is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0077] In the first step S1, a stack is produced (see FIG. 5 ). Specifically, a first semiconductor multilayer reflector 102, a first cladding layer 103, a light-emitting layer 104, a second cladding layer 105, an oxidized layer 106S (e.g., AlGaAs, AlAs, etc.), and a second semiconductor multilayer reflector 107 are stacked in this order on a substrate 101 serving as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). The oxidized layer 106S is the material of the oxidized constriction layer 106, and includes a layer that will be the material of the intermediate layer ML and layers that will be the material of the first buffer layer BL1 and the second buffer layer BL2, which are sandwiched above and below the oxidized layer 106S. When forming the laminate, the compound semiconductor raw materials include, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH ３ ) gas is used, and the source of the donor impurity is, for example, disilane (Si ２ H ６ ) is used, and the raw material of the acceptor impurity is, for example, carbon tetrabromide (CBr ４ ) is used.

[0078] In the next step S2, the mesa M is formed (see FIG. 6 ). Specifically, prior to forming the mesa M, the stack is etched by photolithography and etching until the substrate 101 is exposed, thereby forming an electrode installation area EIA for installing the cathode electrode 109. Next, a resist pattern for forming the mesa M is formed on the stack by photolithography. Next, the stack is etched by, for example, dry etching using the resist pattern as a mask. This etching is performed until at least the side surface of the oxidized layer 106S is exposed (for example, until the etched bottom surface is located within the first semiconductor multilayer film reflector 102). As a result, the mesa M is formed. Thereafter, the resist pattern is removed. Note that the electrode installation area EIA may be formed after forming the mesa M.

[0079] In the next step S3, a third oxidized portion 106b3 is formed as another oxidized portion (see FIG. 7). Specifically, the mesa formed in the stack is exposed to a high-temperature water vapor atmosphere to oxidize the oxidized layer 106S (see FIG. 6) by several micrometers from the side surface toward the center of the mesa. The oxidation conditions are a relatively high temperature and a high water vapor concentration. As a result, the oxidized layer 106S, including the intermediate layer with a high Al composition and the two buffer layers sandwiching the intermediate layer, each with a slightly lower Al composition than the intermediate layer, are both oxidized at the outer periphery, forming a third oxidized portion 106b3 with a large thickness and high oxygen saturation. The third oxidized portion 106b3 has high insulating properties, making it less susceptible to current leakage, which is likely to occur at the mesa periphery. Furthermore, a low capacitance is inserted in series with the pn junction in the large area of ​​the mesa periphery, significantly reducing the capacitance of the entire mesa, which is extremely useful when operating the surface-emitting device 10 at high speeds using pulse modulation. On the other hand, when the third oxidized portion 106b3 is formed, the oxidation rate is high, but an oxidized width of about several μm is sufficient, so some variation in the oxidized width is acceptable. The ability to form a thick oxidized portion on the mesa periphery has the same effect as insulating the mesa periphery by ion implantation. However, with this manufacturing method, as long as the end face of the oxidized layer 106S can be exposed by etching, the third oxidized portion 106b3 can be formed even if the oxidized layer 106S is located at a deep position (low position). Therefore, there is no depth limit like with ion implantation (it is difficult to achieve insulation with ion implantation at a depth of 3 μm or more).

[0080] In the next step S4, multiple holes (multiple first holes H1 and multiple second holes H2) are formed (see FIG. 8 ). Specifically, for example, a resist pattern for forming multiple holes on the mesa of the stack is first formed by photolithography. Next, the mesa is etched, for example, by dry etching, using the resist pattern as a mask. This etching is continued until each hole penetrates at least the oxidized layer 106S (for example, until the bottom of the etched portion is located within the second cladding layer 105, for example, to a position 0.1 μm or more from the bottom surface of the oxidized layer 106S). As a result, multiple holes (multiple holes H1 and multiple holes H2) are formed. The shape, size, and pitch of each hole are set so that adjacent oxidized portions can overlap even if the oxidation width of the corresponding oxidized portion is, for example, 2 μm or less. The resist pattern is formed to achieve this setting. The resist pattern is then removed.

[0081] In the next step S5, multiple oxidized portions (multiple first oxidized portions 106b1 and multiple second oxidized portions 106b2) are formed (see FIG. 9 ). Specifically, the inside of each hole is exposed to a high-temperature water vapor atmosphere, and oxidation is performed radially from the side of the hole with an oxidation width of, for example, 2 μm or less (an oxidation width in which adjacent oxidized portions overlap). The multiple oxidized portions are integrated with each other through their overlapping portions to form a single oxidized region 106b, which has characteristic control functions such as insulation and mode control. By limiting the oxidation width from each hole to, for example, 2 μm or less, the time required for the oxidation process can be shortened, and as a result, the effects of variations in the oxidation reaction can be reduced. This allows the final inner diameter of the oxidized region 106b to be stable and close to the design value, and also reduces the in-plane distribution on the wafer.

[0082] In the next step S6, an insulating film is formed in the multiple holes (the multiple first holes H1 and the multiple second holes H2) (see FIG. 10). Specifically, first, a thin insulating film is formed over the entire surface. Next, photolithography and etching are used to remove the insulating film other than the insulating film formed in the multiple first holes H1 and the multiple holes H2. As a result, an insulating film 114A is formed in each first hole H1, and an insulating film 114B is formed in each second hole H2.

[0083] In the next step S7, the anode electrode 108 is formed (see FIG. 11 ). Specifically, the anode electrode 108 is formed, for example, by lift-off, so that the electrode portion 108a is formed in, for example, a ring shape on the mesa so as to surround the non-oxidized region 106a in a plan view, and so that each first extension portion 108b1 is formed in the corresponding first hole H1 in which the insulating film 114A is formed, and each second extension portion 108b2 is formed in the corresponding second hole H2 in which the insulating film 114B is formed. At this time, deposition, sputtering, or the like is used to form the electrode material.

[0084] In the next step S8, the burying layer 113 is formed (see FIG. 12). Specifically, the periphery of the mesa structure of the stack and one side of the first semiconductor multilayer film reflector 102 are buried with the burying layer 113 by photolithography and etching.

[0085] In the next step S9, the electrode pad 111 and the cathode electrode 109 are formed (see FIG. 13). Specifically, for example, by lift-off, the electrode pad 111 is formed on the buried layer 113, and the cathode electrode 109 is formed thick in the electrode installation region on the substrate 101.

[0086] In the final step S10, the anode wiring 112 is formed (see FIG. 14). Specifically, the anode wiring 112 is formed on the buried layer 113 by, for example, plating so that one end of the anode wiring 112 contacts the electrode portion 108a of the anode electrode 108 and the other end of the anode wiring 112 contacts the electrode pad 111. Prior to plating, it is preferable to form a seed layer in advance in the area to be plated.

[0087] In the above flow, the third oxidized portion 106b3 may be formed after the first and second oxidized portions 106b1 and 106b2 are formed.

[0088] <Effects of the Surface Light Emitting Element and the Method for Manufacturing the Surface Light Emitting Element> The effects of the surface light emitting element 10 and the method for manufacturing the surface light emitting element 10 will be described below.

[0089] The surface light emitting device 10 includes a light emitting element portion LE including a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 stacked on the first structure ST1 and including a second semiconductor structure SS2, and a light emitting layer 104 disposed between the first and second structures ST1 and ST2. An oxidized constriction layer 106 is provided in the second structure, and the oxidized constriction layer 106 has a non-oxidized region 106a and an oxidized region 106b surrounding the non-oxidized region 106a. A plurality of holes (a plurality of first holes H1 and a plurality of second holes H2) in which a solid layer or a gas layer is provided are formed on the surface of the light-emitting element portion LE on the second structure ST2 side, and each of the holes penetrates the oxidized region 106b. The oxidized region 106b has a plurality of oxidized portions (a plurality of first oxidized portions 106b1 and a plurality of second oxidized portions 106b2) through which the plurality of holes individually penetrate, and the oxidation width OW, which is the radial width of each of the plurality of oxidized portions, is less than 1 / 2 of the average inner diameter AID of the oxidized region 106b.

[0090] In this case, the oxidized width OW of each oxidized portion can be made sufficiently small relative to the average inner diameter AID of the oxidized region 106b, and the oxidized width OW can be controlled to approach the design value stably.

[0091] As a result, the surface light emitting device 10 can provide a surface light emitting device that can reduce the deviation of the shape of the oxidized constriction layer 106 from the desired shape.

[0092] The oxidized width OW is preferably equal to or less than one-third of the average inner diameter AID, which makes it possible to further reduce the deviation of the shape of the oxidized constriction layer 106 from the desired shape.

[0093] Each of the plurality of oxidation regions surrounds a corresponding hole, thereby ensuring that each oxidation region is present on the entire outer periphery of the corresponding hole and allowing each oxidation region to overlap with any other adjacent oxidation regions.

[0094] Each of the plurality of oxidized portions has an annular shape in plan view. Since each of the plurality of oxidized portions has an isotropic shape, it is easy to set the layout of the plurality of oxidized portions (for example, a periodic layout).

[0095] Two oxide regions corresponding to two adjacent holes are partially overlapped, which effectively suppresses current leakage.

[0096] The holes are arranged so as to surround the non-oxidized region 106a, thereby enabling an oxidized portion to be formed evenly around the non-oxidized region 106a.

[0097] The plurality of holes includes a first hole group H1G in which a plurality of first holes H1 are arranged circumferentially to surround the non-oxidized region 106a, and a second hole group H2G in which a plurality of second holes H2 are arranged circumferentially to surround the non-oxidized region 106a. The first and second hole groups H1G and H2G are arranged in the radial direction of the oxidized region 106b. This allows the plurality of oxidized portions to be formed circumferentially with a width in the radial direction of the oxidized region 106b.

[0098] The plurality of oxidized portions are arranged so as to surround the non-oxidized region 106a, thereby allowing the oxidized portions to be present evenly around the non-oxidized region 106a.

[0099] The multiple oxidized portions include a first oxidized portion group 106b1G, in which multiple first oxidized portions 106b1 are arranged circumferentially to surround the non-oxidized region 106a, and a second oxidized portion group 106b2G, in which multiple second oxidized portions 106b2 are arranged circumferentially to surround the non-oxidized region 106a. The first and second oxidized portion groups 106b1G and 106b2G are arranged radially. This allows the multiple oxidized portions to form the inner and middle peripheral portions of the oxidized region 106b while reducing the oxidation width OW of each oxidized portion.

[0100] The oxidized region 106b has a third oxidized portion 106b3 (another oxidized portion) surrounding the plurality of oxidized portions. In this case, the third oxidized portion 106b3 can form the outer periphery of the oxidized region 106b.

[0101] The first and second oxidized portions 106b1 and 106b2 and the third oxidized portion 106b3 have different thicknesses, which allows the inner and middle peripheries of the oxidized region 106b to have different characteristics from the outer periphery.

[0102] The third oxidized portion 106b3 is thicker than the first and second oxidized portions 106b1 and 106b2. In this case, by thinning the inner and middle peripheral portions of the oxidized region 106b that are close to the non-oxidized region 106a and that affect light emission, the refractive index difference can be reduced and selectivity of the excitable mode can be controlled, and by thickening the outer peripheral portion of the oxidized region 106b, it is possible to improve insulation (reducing leakage current and improving reliability) and reduce the electrical capacitance of the light-emitting element portion LE (improving high-speed modulation response of the device).

[0103] An electrode portion 108a, which is a part of the anode electrode 108, is provided on the surface of the light-emitting element portion LE on the second structure ST2 side, a first extension portion 108b1, which is the other part of the anode electrode 108, is provided in the first hole H1 via an insulating film 114A, and a second extension portion 108b2, which is the other part of the anode electrode 108, is provided in the second hole H2 via an insulating film 114B. This allows the anode electrode 108 to have a heat dissipation function that releases heat generated in the light-emitting layer 104.

[0104] The anode electrode 108 contains at least one type of metal, which improves the thermal conductivity of the anode electrode 108 and thereby improves the heat dissipation performance.

[0105] The oxide constriction layer 106 is provided in the second structure ST2, and the bottom surfaces of the first and second holes H1 and H2 are located in the second structure ST2, which allows the first and second holes H1 and H2 to be formed in a relatively short time, thereby reducing the manufacturing time.

[0106] The ratio of the average inner diameter of the hole corresponding to the oxidized portion to the oxidized width OW of the oxidized portion is preferably 1 / 3 or more (the former case). This allows the oxidized width OW to be smaller than when the ratio is less than 1 / 3 (the latter case) under the same conditions for the outer diameter of the corresponding oxidized portion. In other words, under the same conditions for the oxidized width OW, the former case allows the inner and outer diameters of the oxidized portion (the actual coverage area of ​​the oxidized portion) to be larger than the latter case.

[0107] The ratio of the average inner diameter of the hole corresponding to the oxidized portion to the oxidized width OW of the oxidized portion is preferably 1 / 2 or more (the former case). This allows the oxidized width OW to be smaller than when the ratio is less than 1 / 2 (the latter case) under the same conditions for the outer diameter of the corresponding oxidized portion. In other words, under the same conditions for the oxidized width OW, the former case allows the inner and outer diameters of the oxidized portion (the actual coverage area of ​​the oxidized portion) to be larger than the latter case.

[0108] It is more preferable that the ratio of the average inner diameter of the hole corresponding to the oxidized portion to the oxidized width OW of the oxidized portion is equal to or greater than 1. This allows the oxidized width OW to be smaller than that of a hole having a ratio of less than 1, when the outer diameter of the corresponding oxidized portion is the same.

[0109] The method for manufacturing the surface light emitting element 10 includes the steps of: laminating a plurality of layers, including the light emitting layer 104 and the oxidizable layer 106S, on the substrate 101 to produce a laminate; forming a plurality of holes, each of which penetrates the oxidizable layer 106S, on the surface of the laminate opposite the substrate 101; and oxidizing the oxidizable layer 106S from the side exposed to each of the plurality of holes. This makes it possible to manufacture a surface light emitting element 10 in which the deviation of the shape of the oxidized constriction layer 106 from the desired shape can be reduced.

[0110] The method for manufacturing the surface light emitting element 10 further includes a step of oxidizing the oxidizable layer 106S from the outer periphery side, thereby manufacturing the surface light emitting element 10 in which the outer periphery of the oxidizable layer 106S can be made highly insulating and have a reduced electric capacitance.

[0111] (Supplementary explanation) Selective oxidation by heating in a water vapor atmosphere, which has traditionally been used to form an oxide confinement layer, is an easy method to use because it allows for selective oxidation of specific layers within the mesa in a later process. However, the thickness and film quality of the oxide confinement layer, and in particular the shape of the oxidized region (in-plane shape and dimensions), are easily affected by the oxidation conditions (heating temperature, water vapor concentration, atmospheric pressure, positional relationship between the water vapor flow and the wafer, etc.) and the state of the oxidized layer and the surrounding epitaxial film (film thickness, doping amount, impurities, crystallinity, etc.), which makes it prone to variations between lots and within the wafer. These variations directly affect the characteristics of the surface-emitting device, significantly impacting manufacturing yield.

[0112] Furthermore, when the oxidized region is formed extremely thin to reduce the difference in refractive index at the boundary between the non-oxidized and oxidized regions and to selectively control the excitable modes, oxidation becomes more difficult, and the oxidation process requires more processing time, resulting in greater morphological variation in the oxidized region. In this case, the percentage of devices that exhibit the desired behavior decreases, seriously affecting yield. For thin oxide layers, reducing the mesa diameter is one option to shorten the oxidation time, but making the mesa diameter too small significantly impacts the processes surrounding the electrode wiring, leading to wiring breakage and unavoidable increases in contact resistance.

[0113] To achieve the desired oxidized confinement layer with the most stable shape possible, it is essential to achieve a uniform thickness distribution of the oxidized epitaxial film and stabilize the oxidation conditions. In this case, it is desirable to stabilize the oxidation reaction by oxidizing only specific epitaxial layers and to maintain a uniform oxidized region thickness throughout the entire region. However, while a relatively thin oxidized region is desirable near the confinement boundary (the boundary between the non-oxidized and oxidized regions) related to light emission due to the aforementioned mode selection, a thick oxidized region is required near the mesa periphery to ensure reliable current insulation (reducing leakage current and improving reliability) and reduce the overall mesa capacitance (improving the device's high-speed modulation response). This traditionally creates a trade-off between the two oxide confinement layer conditions. To avoid this, ion implantation (protons are used in GaAs-based materials) into the mesa periphery has been used to insulate the depth from the oxidized region to the active layer. Both structures, including those with ion implantation around the mesa periphery and those designed to support the mesa with multiple semiconductor support pillars (see Non-Patent Document 1, Proceedings of SPIE, 2009), have been successfully achieved by combining proton implantation to reduce stray capacitance and leakage current around the periphery and improve reliability. However, ion implantation is difficult to achieve insulation over a maximum depth of 3 μm or more, and it is generally unable to accommodate structures with oxide confinement layers and active layers at greater depths (e.g., multi-junction structures or structures using multiple oxide confinement layers). Furthermore, in structures using multiple oxide confinement layers, even when the oxidized layers are oxidized under the same oxidation conditions, the size of the oxidized region may vary from layer to layer due to subtle differences in the film thickness, doping, and end face condition of each layer on the mesa sidewall, which also significantly affects performance. Stably achieving an oxide confinement layer with a uniform oxide width through a long oxidation process for multiple oxidized layers is even more difficult than with a single oxide confinement layer.

[0114] 2. Surface Light Emitting Device According to Example 2 of an Embodiment of the Present Technology FIG. 15 is a cross-sectional view of a surface light emitting device 20 according to Example 2 of an embodiment of the present technology.

[0115] As shown in FIG. 15, the surface light emitting device 20 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that an ion implantation region IIA is provided instead of the third oxidized portion 106b3.

[0116] In the surface light emitting element 20, an ion implantation region IIA (shown in light grey in FIG. 15 ) is provided on the outer periphery of the mesa structure as an insulating region surrounding the inner periphery (the inner periphery) of the region where at least the plurality of oxidized portions (the plurality of first oxidized portions 106b1 and the plurality of second oxidized portions 106b2) are arranged in the light emitting element component LE. Examples of ion species for the ion implantation region IIA include H and B. The vertical distance of the ion implantation region IIA is set to be less than 3 μm.

[0117] The surface-emitting device 20 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that an ion-implanted region IIA is formed instead of forming the third oxidized portion 106b3.

[0118] According to the surface light emitting device 20, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0119] 3. Surface Light Emitting Device According to Example 3 of an Embodiment of the Present Technology FIG. 16 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0120] The surface-emitting element 30 has a configuration similar to that of the surface-emitting element 10 of Example 1, except that the oxide constriction layer 106 is provided within the first structure ST1 and the bottom surfaces of the first and second holes H1 and H2 are located within the first structure ST1.

[0121] In the surface-emitting device 30, as an example, the oxide constriction layer 106 is provided in the first semiconductor multilayer film reflector 102, and the bottom surfaces of the first and second holes H1, H2 are located on the substrate 101 side (below) of the oxide constriction layer 106 in the first semiconductor multilayer film reflector 102. Note that the oxide constriction layer 106 may be provided, for example, between the first semiconductor multilayer film reflector 102 and the first cladding layer 103, or may be provided in the first cladding layer 103.

[0122] The surface-emitting device 30 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that the oxidized constriction layer 106 is formed within the first structure ST and the bottom surfaces of the first and second holes H1, H2 are positioned within the first structure ST.

[0123] According to the surface light emitting device 30, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0124] 4. Surface Light Emitting Device According to Example 4 of an Embodiment of the Present Technology FIG. 17 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0125] The surface light emitting device 40 has the same configuration as the surface light emitting device 10 according to Example 1, except that the oxidized constriction layer 106 is provided in the first and second structures ST1 and ST2, and the bottom surfaces of the first and second holes H1 and H2 are located in the first structure ST1. Here, the first and second holes H1 and H2 penetrate the oxidized regions 106b of the respective oxidized constriction layers 106.

[0126] In the surface-emitting device 40, as an example, an oxide constriction layer 106 is provided between the second cladding layer 105 and the second semiconductor multilayer reflector 107 and within the first semiconductor multilayer reflector 102, and the bottom surfaces of the first and second holes H1, H2 are located within the first semiconductor multilayer reflector 102 on the substrate 101 side (below) of the oxide constriction layer 106.

[0127] The surface-emitting device 40 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that the oxidized constriction layer 106 is formed within the first and second structures ST, and the bottom surfaces of the first and second holes H1, H2 are positioned within the first structure ST.

[0128] According to the surface-emitting device 40, the same effects as those of the surface-emitting device 10 of Example 1 can be obtained, and since the bottom surfaces of the first and second holes H1, H2 are located within the first structure ST, heat dissipation can be improved, and since multiple (e.g., two) oxide constriction layers 106 are provided, the light-emitting efficiency can be further improved.

[0129] 5. Surface Light Emitting Element According to Example 5 of an Embodiment of the Present Technology FIG. 18 is a cross-sectional view of a surface light emitting element 50 according to Example 5 of an embodiment of the present technology.

[0130] As shown in FIG. 18, the surface light emitting device 50 has the same configuration as the surface light emitting device 10 according to the first embodiment, except that it is a back-emitting VCSEL.

[0131] In the surface-emitting device 50, the electrode portion 108a of the anode electrode 108 is provided in a solid state on the mesa structure, and the electrode portion 108a can also function as a metal reflecting mirror. That is, in the surface-emitting device 50, a hybrid mirror can be configured by including the second semiconductor multilayer film reflecting mirror 107 and the electrode portion 108a.

[0132] In the surface-emitting device 50 , the reflectance of the second semiconductor multilayer reflector 107 is set slightly higher than the reflectance of the first semiconductor multilayer reflector 102 , and the laser light is emitted to the rear surface (bottom side) of the substrate 101 .

[0133] The surface light emitting device 50 can be manufactured by the same method as the surface light emitting device 10 according to the first embodiment, except that the electrode portion 108a of the anode electrode 108 is formed in a solid shape.

[0134] According to the surface light emitting device 50, it is possible to provide a back-emitting VCSEL that can obtain the same effects as the surface light emitting device 10 according to the first embodiment.

[0135] 19 is a cross-sectional view of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology. Fig. 20 is a cross-sectional view of an oxidized constriction layer 106-6 of a surface light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0136] As shown in FIGS. 19 and 20, the surface light emitting device 60 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that it does not have the second hole group H2G and the second oxidized portion group 106b2G.

[0137] In the surface light emitting element 60, the second oxidized portion group 106b2G is not provided, and therefore the oxidized width (radial width) of the third oxidized portion 106b3 (circumferential oxidized portion) is larger.

[0138] The surface-emitting element 60 can be manufactured using a manufacturing method similar to that of the surface-emitting element 10 of Example 1, except that the second hole group H2G and the second oxidized portion group 106b2G are not formed and the oxidation width of the third oxidized portion 106b3 is increased.

[0139] The surface light emitting device 60 provides substantially the same effects as the surface light emitting device 10 according to the first embodiment, and although the time required to form the third oxidized portion 106b3 is somewhat longer, the manufacturing process can be simplified.

[0140] 21 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology. Fig. 22 is a cross-sectional view of an oxidized constriction layer 106-7 of the surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0141] 21 and 22, the surface light emitting device 70 has the same configuration as the surface light emitting device 70 according to Example 1, except that it has a third oxidized portion group 106b3G instead of the third oxidized portion 106b3 (circumferential oxidized portion). The third oxidized portion group 106b3G includes a plurality of third oxidized portions 106b3′.

[0142] In the surface light emitting device 70, the oxidized region 106b of the oxidized constriction layer 106-7 is configured to include first to third oxidized portion groups 106b1G, 106b2G, and 106b3G.

[0143] A third group of holes H3G is provided around the outer periphery of the second group of holes H2G. The third group of holes H3G includes a plurality of third holes H3 that individually penetrate a plurality of third oxidized portions 106b3'. Each third oxidized portion 106b3' surrounds a corresponding third hole H3. Each third oxidized portion 106b3' partially overlaps with the adjacent third oxidized portion 106b3' and the adjacent second oxidized portion 106b2.

[0144] In the surface-emitting device 70, the first oxidized portion group 106b1G forms the inner peripheral portion of the oxidized region 106b, the second oxidized portion group 106b2G forms the middle peripheral portion of the oxidized region 106b, and the third oxidized portion group 106b3G forms the outer peripheral portion of the oxidized region 106b. The first to third oxidized portion groups 106b1G, 106b2G, and 106b3G are aligned radially of the oxidized region 106b, partially overlapping each other to prevent gaps, and are essentially continuous and integrated, forming a single oxidized region 106b as a whole.

[0145] The surface-emitting element 70 can be manufactured using a method similar to that of the surface-emitting element 10 of Example 1, except that a third oxidized portion group 106b3G is formed instead of the third oxidized portion 106b3 (circumferential oxidized portion).

[0146] The surface light emitting device 70 can provide a surface light emitting device that can obtain the same effects as the surface light emitting device 10 according to the first embodiment and can simplify the manufacturing process (step S3 in FIG. 4 is not required). Note that the surface light emitting device 70 may further include a third oxidized portion 106b3 (circumferential oxidized portion) in the outermost periphery of the oxidized constriction layer 106-7. This can more reliably suppress current leakage.

[0147] 8. Surface Light Emitting Device According to Example 8 of an Embodiment of the Present Technology FIG. 23 is a cross-sectional view of a surface light emitting device 80 according to Example 8 of an embodiment of the present technology.

[0148] As shown in Figure 23, the surface-emitting element 80 has a configuration similar to that of the surface-emitting element 10 of Example 1, except that the mesa structure of the light-emitting element portion LE is provided with an ion implantation region IIA (lightly shaded portion in Figure 23) that surrounds the inner peripheral end (inner peripheral end) of the first oxidation portion group that includes multiple first oxidation portions 106b1.

[0149] The surface light emitting device 80 can be manufactured by the same manufacturing method as the surface light emitting device 10 according to the first embodiment, except for the formation of the ion implantation region IIA.

[0150] According to the surface light emitting device 80, the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained, and a surface light emitting device capable of sufficiently suppressing current leakage can be provided.

[0151] 9. Surface Light Emitting Device According to Example 9 of an Embodiment of the Present Technology FIG. 24 is a cross-sectional view of a surface light emitting device 90 according to Example 9 of an embodiment of the present technology.

[0152] As shown in Figure 24, the surface-emitting element 90 has a configuration generally similar to that of the surface-emitting element 10 of Example 1, except that the light-emitting element portion LE has a mesare-less structure and does not have a third oxidation portion 106b3 (circumferential oxidation portion).

[0153] The surface light emitting device 90 does not have a buried layer 113. In the surface light emitting device 90, an ion implantation region IIA is provided instead of the third oxidized portion 106b3 (circumferential oxidized portion). As an example, the ion implantation region IIA surrounds at least the inner peripheral end of a first oxidized portion group including a plurality of first oxidized portions 106b1. Here, the ion implantation region IIA surrounds the inner peripheral end of a second oxidized portion group including a plurality of second oxidized portions 106b2.

[0154] The surface-emitting device 90 can be manufactured using a method similar to that of the surface-emitting device 10 of Example 1, except that a mesa structure is not formed and an ion-implanted region IIA is formed instead of the third oxidized portion 106b3.

[0155] According to the surface light emitting device 90, it is possible to provide a surface light emitting device having a mesare-less structure that can obtain the same effects as the surface light emitting device 10 according to the first embodiment.

[0156] 10. Surface Light Emitting Device According to Example 10 of an Embodiment of the Present Technology FIG. 25 is a cross-sectional view of a surface light emitting device 100 according to Example 10 of an embodiment of the present technology.

[0157] As shown in Figure 25, the surface-emitting element 100 has a configuration generally similar to that of the surface-emitting element 10 of Example 1, except that air gaps AG1 and AG2 are provided as gas layers in the first and second holes H1 and H2, respectively.

[0158] In the surface light emitting device 100, the anode electrode 108 is composed of only the electrode portion 108a. That is, in the surface light emitting device 100, the anode electrode 108 does not have the first and second extending portions 108b1, 108b2. No insulating film is provided in the first and second holes H1, H2.

[0159] In the surface light emitting device 100, the inner diameter of the electrode portion 108a is set to be larger than that of the surface light emitting device 10 according to Example 1. More specifically, the electrode portion 108a is provided on the mesa structure in a circumferential shape (for example, a ring shape) so as to surround the plurality of second holes H2 in plan view.

[0160] The surface-emitting device 100 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that the anode electrode 108 is formed so that the inner diameter of the electrode portion 108a is large and no extension portion is formed in the first and second holes H1, H2.

[0161] According to the surface light emitting device 100, since no extension portion is provided, the heat dissipation performance is inferior, but the manufacturing process can be simplified and substantially the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0162] 11. Surface Light Emitting Device According to Example 11 of an Embodiment of the Present Technology FIG. 26 is a cross-sectional view of a surface light emitting device 110 according to Example 11 of an embodiment of the present technology.

[0163] As shown in FIG. 26, the surface light emitting device 110 has a configuration generally similar to that of the surface light emitting device 10 according to the first embodiment, except that the first and second holes H1 and H2 are filled with an insulating film as a solid layer.

[0164] In the surface light emitting element 110, the anode electrode 108 is composed of only the electrode portion 108a. That is, in the surface light emitting element 110, the anode electrode 108 does not have the first and second extending portions 108b1 and 108b2.

[0165] In the surface light emitting device 110, the first hole H1 is filled with an insulating film IF1, and the second hole H2 is filled with an insulating film IF2. The insulating films IF1 and IF2 are made of, for example, SiO ２ The insulating films IF1 and IF2 are made of, for example, the same material.

[0166] The surface light emitting device 110 can be manufactured by a method generally similar to that of the surface light emitting device 10 according to the first embodiment, except that the first and second holes H1 and H2 are filled with an insulating film.

[0167] According to the surface light emitting device 110, since no extension portion is provided, the heat dissipation performance is inferior, but the manufacturing process can be simplified and the same effects as those of the surface light emitting device 10 according to the first embodiment can be obtained.

[0168] 12. Surface Light Emitting Device According to Example 12 of an Embodiment of the Present Technology FIG. 27 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0169] As shown in Figure 27, the surface-emitting device 120 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized constriction layer 106 is arranged within the second structure ST and the bottom surfaces of the first and second holes H1, H2 are located within the first structure ST1.

[0170] In the surface light emitting device 120, as an example, the bottom surfaces of the first and second holes H1 and H2 are located within the first semiconductor multilayer film reflector 102. Note that the bottom surfaces of the first and second holes H1 and H2 may also be located within the first cladding layer 103.

[0171] The surface-emitting device 120 can be manufactured by a method similar to that of the surface-emitting device 10 of Example 1, except that the first and second holes H1, H2 are formed so that the bottom surfaces of the first and second holes H1, H2 are located within the first semiconductor multilayer film reflector 102.

[0172] According to the surface-emitting device 120, the same effect as that of the surface-emitting device 10 of Example 1 can be obtained, and since the bottom surfaces of the first and second holes H1, H2 are within the first structure ST1, the first and second extension portions 108b1, 108b2 can be made longer, thereby improving heat dissipation properties.

[0173] 13. Surface-Emitting Element According to Example 13 of an Embodiment of the Present Technology FIG. 28 is a cross-sectional view of an oxidized constriction layer 106-13 of a surface-emitting element according to Example 13 of an embodiment of the present technology.

[0174] As an example, as shown in Figure 28, the surface-emitting device of Example 13 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized region 106b of the oxidized constriction layer 106-13 is composed of a first oxidized portion group 106b1G and a third oxidized portion 106b3 (circumferential oxidized portion), and the number of first oxidized portions 106b1 is slightly smaller and the oxidized width OW is larger.

[0175] In the surface light emitting device of Example 13, the oxidized width OW of the first oxidized portion 106b1 is equal to or greater than 1 / 3 and less than 1 / 2 of the average inner diameter AID of the oxidized region 106b. Here, the number of first holes H1 and the number of first oxidized portions 106b1 are both eight.

[0176] In the surface light emitting device of Example 13, the ratio of the average diameter of the first holes H1 corresponding to each first oxidized portion 106b1 to the oxidized width OW of the first oxidized portion 106b1 is set to be greater than or equal to 1 / 4 and less than 1 / 3.

[0177] According to the surface-emitting device of Example 13, although the uniformity of the oxidation width OW of the first oxidized portion 106b1 is poor, a relatively small number of first oxidized portions 106b1 and third oxidized portions 106b3 can achieve effects generally similar to those of the surface-emitting device 10 of Example 1.

[0178] 14. Surface-Emitting Element According to Example 14 of an Embodiment of the Present Technology FIG. 29 is a cross-sectional view of an oxidized constriction layer 106-14 of a surface-emitting element according to Example 14 of an embodiment of the present technology.

[0179] As an example, as shown in Figure 29, the surface-emitting device of Example 14 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized region 106b of the oxidized constriction layer 106-14 is composed of a first oxidized portion group 106b1G and a third oxidized portion 106b3 (circumferential oxidized portion), and the number of first oxidized portions 106b1 is slightly smaller and the oxidized width OW is slightly larger.

[0180] In the surface light emitting device of Example 14, the oxidized width OW of the first oxidized portion 106b1 is equal to or greater than 1 / 4 and less than 1 / 3 of the average inner diameter AID of the oxidized region 106b. Here, the number of first holes H1 and the number of first oxidized portions 106b1 are both eight.

[0181] In the surface light emitting device of Example 14, the ratio of the average diameter of the first holes H1 corresponding to each first oxidized portion 106b1 to the oxidized width OW of the first oxidized portion 106b1 is set to be greater than or equal to 1 / 3 and less than 1 / 2.

[0182] According to the surface-emitting device of Example 14, although the uniformity of the oxidation width OW of the first oxidized portion 106b1 is slightly inferior, a relatively small number of first oxidized portions 106b1 and third oxidized portions 106b3 can achieve effects generally similar to those of the surface-emitting device 10 of Example 1.

[0183] 15. Surface-Emitting Element According to Example 15 of an Embodiment of the Present Technology FIG. 30 is a cross-sectional view of an oxidized constriction layer 106-15 of a surface-emitting element according to Example 15 of an embodiment of the present technology.

[0184] As an example, as shown in Figure 30, the surface-emitting device of Example 15 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized region 106b of the oxidized constriction layer 106-15 is composed of a first oxidized portion group 106b1G and a third oxidized portion 106b3 (circumferential oxidized portion), and the number of first oxidized portions 106b1 is slightly smaller and the oxidized width OW is slightly larger.

[0185] In the surface light emitting device of Example 15, the oxidized width OW of the first oxidized portion 106b1 is equal to or greater than 1 / 5 and less than 1 / 4 of the average inner diameter AID of the oxidized region 106b. Here, the number of first holes H1 and the number of first oxidized portions 106b1 are both eight.

[0186] In the surface-emitting device of Example 15, the ratio of the average diameter of the first hole H1 corresponding to each first oxidized portion 106b1 to the oxidation width OW of the first oxidized portion 106b1 is set to be greater than 1 / 2 and less than 1, or greater than 1 and less than 3 / 2.

[0187] According to the surface-emitting device of Example 15, although the uniformity of the oxidation width OW of the first oxidized portion 106b1 is slightly inferior, a relatively small number of first oxidized portions 106b1 and third oxidized portions 106b3 can achieve effects generally similar to those of the surface-emitting device 10 of Example 1.

[0188] 16. Surface-Emitting Element According to Example 16 of an Embodiment of the Present Technology FIG. 31 is a cross-sectional view of an oxidized constriction layer 106-16 of a surface-emitting element according to Example 16 of an embodiment of the present technology.

[0189] As an example, as shown in Figure 31, the surface-emitting device of Example 16 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized region 106b of the oxidized constriction layer 106-16 is composed of a first oxidized portion group 106b1G and a third oxidized portion 106b3 (circumferential oxidized portion), and the number of first oxidized portions 106b1 is slightly smaller and the oxidized width OW is slightly smaller.

[0190] In the surface light emitting device of Example 16, the oxidized width OW of the first oxidized portion 106b1 is equal to or greater than 1 / 7 and less than 1 / 6 of the average inner diameter AID of the oxidized region 106b. Here, the number of first holes H1 and the number of first oxidized portions 106b1 are both eight.

[0191] In the surface-emitting device of Example 16, the ratio of the average inner diameter of the first hole H1 corresponding to each first oxidized portion 106b1 to the oxidation width OW of the first oxidized portion 106b1 is set to be greater than or equal to 1 and less than 3 / 2, or greater than or equal to 3 / 2 and less than 2.

[0192] According to the surface-emitting device of Example 16, the uniformity of the oxidation width OW of the first oxidized portion 106b1 is slightly better controlled, and a relatively small number of first oxidized portions 106b1 and third oxidized portions 106b3 can achieve effects generally similar to those of the surface-emitting device 10 of Example 1.

[0193] 17. Surface-Emitting Element According to Example 17 of an Embodiment of the Present Technology FIG. 32 is a cross-sectional view of an oxidized constriction layer 106-17 of a surface-emitting element according to Example 17 of an embodiment of the present technology.

[0194] As an example, as shown in Figure 32, the surface-emitting device of Example 17 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the oxidized region 106b of the oxidized constriction layer 106-17 is composed of a first oxidized portion group 106b1G and a third oxidized portion 106b3 (circumferential oxidized portion), and the number of first oxidized portions 106b1 in the first oxidized portion group 106b1G is slightly larger and the oxidized width is slightly smaller.

[0195] In the surface-emitting device of Example 17, the oxidized width OW of the first oxidized portion 106b1 is 1 / 7 or more and less than 1 / 6, or 1 / 8 or more and less than 1 / 7, of the average inner diameter AID of the oxidized region 106b. Here, the number of first holes H1 and the number of first oxidized portions 106b1 are both 13.

[0196] In the surface-emitting device of Example 17, the ratio of the average diameter of the first hole H1 corresponding to each first oxidized portion 106b1 to the oxidation width OW of the first oxidized portion 106b1 is set to be greater than 1 / 2 and less than 1, or greater than 1 and less than 3 / 2.

[0197] According to the surface-emitting device of Example 17, although it is necessary to slightly increase the number of first oxidized portions 106b1 and increase the oxidized width of the third oxidized portion 106b3, it has excellent uniformity controllability of the oxidized width OW of the first oxidized portion 106b1.

[0198] 18. Surface-Emitting Element According to Example 18 of an Embodiment of the Present Technology FIG. 33 is a cross-sectional view of an oxidized constriction layer 106-18 of a surface-emitting element according to Example 18 of an embodiment of the present technology.

[0199] As an example, as shown in Figure 33, the surface-emitting device of Example 18 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the number of oxidized portions in each of the first and second oxidized portion groups 106b1G, 106b2G of the oxidized constriction layer 106-18 is slightly larger and the oxidized width is slightly smaller.

[0200] In the surface-emitting device of Example 18, the oxidation width OW of each of the first and second oxidized portions 106b1, 106b2 is 1 / 7 or more and less than 1 / 6, or 1 / 8 or more and less than 1 / 7, of the average inner diameter AID of the oxidized region 106b. Here, the number of both the first holes H1 and the first oxidized portions 106b1 is 13. The number of both the second holes H2 and the second oxidized portions 106b2 is 19.

[0201] In the surface-emitting device of Example 18, the ratio of the average inner diameter of the first holes H1 corresponding to each first oxidized portion 106b1 to the oxidation width OW of that first oxidized portion 106b1 is set to be equal to or greater than 1 / 2 and less than 1, or equal to or greater than 1 and less than 3 / 2. The ratio of the average inner diameter of the second holes H2 corresponding to each second oxidized portion 106b2 to the oxidation width OW of that second oxidized portion 106b1 is set to be equal to or greater than 1 / 2 and less than 1, or equal to or greater than 1 and less than 3 / 2.

[0202] According to the surface-emitting device of Example 18, although it is necessary to slightly increase the number of first and second oxidized portions 106b1, 106b2 and to slightly increase the oxidation width of the third oxidized portion 106b3, it has excellent uniformity controllability of the oxidation width OW of each of the first and second oxidized portions 106b1, 106b2.

[0203] 19. Surface-Emitting Element According to Example 19 of an Embodiment of the Present Technology FIG. 34 is a cross-sectional view of an oxidized constriction layer 106-19 of a surface-emitting element according to Example 19 of an embodiment of the present technology.

[0204] As an example, as shown in Figure 34, the surface-emitting device of Example 19 has an oxidized region 106b of the oxidized constriction layer 106-19 that includes a first oxidized portion group 106b1G, a second oxidized portion group 106b2G, a third oxidized portion group 106b3G, and a third oxidized portion 106b3 (circumferential oxidized portion), and has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the number of oxidized portions in each of the first to third oxidized portion groups 106b1G, 106b2G, and 106b3G is slightly larger and the oxidation width is slightly smaller.

[0205] In the surface-emitting device of Example 19, the oxidation width OW of each of the first to third oxidized portions 106b1, 106b2, and 106b3 is 1 / 7 or more and less than 1 / 6, or 1 / 8 or more and less than 1 / 7, of the average inner diameter AID. Here, the number of first holes H1 and first oxidized portions 106b1 is 13. The number of second holes H2 and second oxidized portions 106b2 is 19. The number of third holes H3 and third oxidized portions 106b3′ is 24.

[0206] In the surface-emitting device of Example 19, the ratio of the average diameter of the first holes H1 corresponding to each first oxidized portion 106b1 to the oxidation width OW of that first oxidized portion 106b1 is set to be equal to or greater than 1 / 2 and less than 1, or equal to or greater than 1 and less than 3 / 2. The ratio of the average diameter of the second holes H2 corresponding to each second oxidized portion 106b2 to the oxidation width OW of that second oxidized portion 106b1 is set to be equal to or greater than 1 / 2 and less than 1, or equal to or greater than 1 and less than 3 / 2. The ratio of the average diameter of the third holes H3 corresponding to each third oxidized portion 106b3' to the oxidation width OW of that third oxidized portion 106b3' is set to be equal to or greater than 1 / 2 and less than 1, or equal to or greater than 1 and less than 3 / 2.

[0207] According to the surface-emitting device of Example 19, although it is necessary to slightly increase the number of first and second oxidized portions 106b1, 106b2 and to provide a third oxidized portion group 106b3G, it has excellent uniformity controllability of the oxidation width OW of the first to third oxidized portions 106b1, 106b2, 106b3'.

[0208] 20. Surface-Emitting Element According to Example 20 of an Embodiment of the Present Technology FIG. 35 is a cross-sectional view of an oxidized constriction layer 106-20 of a surface-emitting element according to Example 20 of an embodiment of the present technology.

[0209] The surface-emitting device of Example 20 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that, as shown in Figure 35 as an example, in the oxidized constriction layer 106-20, the planar shape of the non-oxidized region 106a, which is defined by the inner edge of the oxidized region 106b, is elliptical.

[0210] Here, the average inner diameter of the oxidized region 106b is equal to the average diameter of the ellipse that is the shape of the non-oxidized region 106a. The average inner diameter may be approximated by the average value of the major axis and the minor axis of the ellipse.

[0211] The surface light emitting device of Example 20 can achieve the same effects as the surface light emitting device 10 of Example 1, and can form the non-oxidized region 106a into a desired shape (e.g., a shape having polarization-controllable anisotropy) regardless of the outer shape of the mesa structure, depending on the layout of the multiple oxidized portions. The shape of the non-oxidized region 106a (the inner peripheral shape of the oxidized region 106b) may be a shape having at least one axis of symmetry other than an ellipse (e.g., a polygon having at least one axis of symmetry). When the shape of the non-oxidized region 106a is a polygon having at least one axis of symmetry, the average inner diameter of the oxidized region 106b may be approximated by the average diameter of a circle or ellipse inscribed or circumscribed in the polygon.

[0212] 21. Surface-Emitting Element According to Example 21 of an Embodiment of the Present Technology FIG. 36 is a cross-sectional view of an oxidized constriction layer 106-21 of a surface-emitting element according to Example 21 of an embodiment of the present technology.

[0213] As an example, as shown in Figure 36, the surface-emitting device of Example 21 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that in the oxidized constriction layer 106-21, the planar shape of the non-oxidized region 106a, defined by the inner edge of the oxidized region 106b, is asymmetric (a shape without an axis of symmetry).

[0214] Here, the average inner diameter of the oxidized region 106b is equal to the average diameter of the asymmetric shape of the non-oxidized region 106a. The average inner diameter may be approximated by the average value of the maximum and minimum diameters of the asymmetric shape.

[0215] The surface light emitting device of Example 21 provides the same effects as the surface light emitting device 10 of Example 1, and the shape of the non-oxidized region 106a can be made into a desired shape (for example, a shape having polarization-controllable anisotropy) depending on the layout of the multiple oxidized portions, regardless of the outer shape of the mesa structure. The shape of the non-oxidized region 106a (the inner peripheral shape of the oxidized region 106b) may be a polygon without an axis of symmetry. When the shape of the non-oxidized region 106a is a polygon without an axis of symmetry, the average inner diameter of the oxidized region 106b may be approximated by the average diameter of a circle or ellipse inscribed or circumscribed in the polygon.

[0216] 22. Surface-Emitting Element According to Example 22 of an Embodiment of the Present Technology FIG. 37 is a cross-sectional view of an oxidized constriction layer 106-22 of a surface-emitting element according to Example 22 of an embodiment of the present technology.

[0217] The surface-emitting device of Example 22 has a configuration generally similar to that of the surface-emitting device 10 of Example 1, except that the average diameters (e.g., diameters) of the first and second holes H1 and H2 are different, as shown in Figure 37 as an example.

[0218] In the surface light emitting device according to Example 22, for example, the average diameter of the second holes H2 is larger than the average diameter of the first holes H1. This allows the size (inner diameter and outer diameter) of the second oxidized portion 106b2 to be larger than the size (inner diameter and outer diameter) of the first oxidized portion 106b1. Note that the average diameter of the first holes H1 may be larger than the average diameter of the second holes H2.

[0219] According to the surface light emitting device of Example 22, the same effects as those of the surface light emitting device 10 of Example 1 can be obtained, and the oxidized width of the third oxidized portion 106b3 can be reduced.

[0220] 23. Modifications of the Present Technology The present technology is not limited to the examples of the above-described embodiment, and can be modified as appropriate.

[0221] 38 , a surface emitting device 10-1 according to Modification 1 of Example 1 may have an intra-cavity structure in which the cathode electrode 109 is disposed on the first semiconductor multilayer film reflector 102. In this case, a semi-insulating substrate or an insulating substrate may be used for the substrate 101.

[0222] For example, a surface-emitting LED (light-emitting diode) may be configured as in a surface-emitting device 10-2 according to Modification 2 of Example 1 shown in Fig. 39. The surface-emitting device 10-2 does not have a second semiconductor multilayer film reflector 107, but has an oxide constriction layer 106 provided in the second cladding layer 105, and an anode electrode 108 provided on the second cladding layer 105. Note that it is also possible to configure a back-emitting LED by removing the first semiconductor multilayer film reflector 102 from the surface-emitting device 10 instead of the second semiconductor multilayer film reflector 107.

[0223] The surface light emitting device of each of the above-described embodiments and modifications may have a light emitting element unit array in which a plurality of light emitting element units LE are arranged one-dimensionally or two-dimensionally.

[0224] In the surface light emitting devices according to the above-described embodiments and modifications, at least one of the first and second cladding layers 103 and 105 may not be provided.

[0225] In the above-described embodiments and modifications, a GaAs-based surface-emitting device (a material system lattice-matched to GaAs) has been mainly described, but the present technology is not limited thereto and can also be applied to, for example, an InP-based surface-emitting device (a material system lattice-matched to InP), a GaN-based surface-emitting device (a material system lattice-matched to GaN), etc. Examples of InP-based devices include AlGaInP-based, AlGaInAs-based, and AlInAs-based devices.

[0226] That is, the surface light emitting device according to the present technology can use a material that emits light at any wavelength within the wavelength range of 200 to 2000 nm.

[0227] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, but may in fact have a reflector made up of one or a combination of two or more types selected from semiconductors, dielectrics, and metals.

[0228] In the surface light emitting devices according to the above-described embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0229] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0230] In each of the above-described embodiments and modifications, the arrangement, material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the surface-emitting device can be appropriately changed within the range in which the surface-emitting device functions.

[0231] 24. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, or on a low-power device (for example, a smartphone, a smartwatch, a tablet, a mouse, etc.).

[0232] The surface light emitting device according to the present technology can also be applied as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0233] 25. Example of Application of Surface Light Emitting Device to Distance Measuring Device An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0234] 40 illustrates an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including the surface light emitting element 10 according to Example 1, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0235] The light receiving device 125 receives light emitted from the surface light emitting device 10 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens, such as a collimating lens, for converting the light emitted from the surface light emitting device 10 into parallel light. The lens 138 is a lens, such as a condensing lens, for collecting the light reflected by the subject S and guiding it to the light receiving device 125.

[0236] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155 or an output signal from a detection unit that directly detects the output of the surface-emitting device 10. The control unit 155 is, for example, a processor that controls the surface-emitting device 10, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0237] In this application example, instead of the surface-emitting element 10 of Example 1, any of the surface-emitting elements of Examples 2 to 22 and the surface-emitting elements of Modifications 1 and 2 of Example 1 can also be applied to the distance measurement device 1000.

[0238] 26. Example in which distance measuring device is mounted on a moving body> FIG. 41 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0239] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 41 , the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0240] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0241] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0242] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0243] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0244] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0245] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0246] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0247] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 41, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0248] FIG. 42 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0249] In FIG. 42, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0250] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0251] 42 shows an example of the detection ranges of the distance measuring devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measuring device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measuring devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measuring device 12104 provided on the rear bumper or back door.

[0252] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0253] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0254] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0255] The present technology can also be configured as follows: (1) A surface-emitting device comprising a light-emitting element component including: a first structure including a first semiconductor structure; a second structure stacked on the first structure and including a second semiconductor structure; and a light-emitting layer disposed between the first and second structures, wherein an oxidation constriction layer is provided in the first structure and / or the second structure, the oxidation constriction layer having: a non-oxidized region; and an oxidation region surrounding the non-oxidized region, wherein a surface of the light-emitting element component facing the second structure is formed with a plurality of holes each having a solid or gas layer therein, the plurality of holes penetrating the oxidation region, the oxidation region having a plurality of oxidized portions through which the plurality of holes individually penetrate, and the radial width of each of the plurality of oxidized portions is less than half of the average inner diameter of the oxidized region. (2) The surface-emitting device according to (1), wherein the oxidation width is equal to or less than one-third of the average inner diameter. (3) The surface-emitting device according to (1) or (2), wherein each of the plurality of oxidized portions surrounds a corresponding one of the holes. (4) The surface light-emitting device according to any one of (1) to (3), wherein each of the plurality of oxidized portions is annular in a planar view. (5) The surface light-emitting device according to any one of (1) to (4), wherein two of the oxidized portions individually corresponding to two adjacent holes partially overlap. (6) The surface light-emitting device according to any one of (1) to (5), wherein the plurality of holes are arranged so as to surround the non-oxidized region. (7) The surface light-emitting device according to any one of (1) to (6), wherein the plurality of holes includes at least one hole group in which a plurality of the holes are arranged circumferentially so as to surround the non-oxidized region. (8) The surface light-emitting device according to (7), wherein the plurality of holes includes a plurality of hole groups arranged in a radial direction of the oxidized region. (9) The surface light-emitting device according to any one of (1) to (8), wherein the plurality of oxidized portions are arranged so as to surround the non-oxidized region. (10) The surface light-emitting device according to any one of (1) to (9), wherein the plurality of oxidized portions includes at least one oxidized portion group in which the plurality of oxidized portions are arranged in a circumferential manner so as to surround the non-oxidized region. (11) The surface light-emitting device according to (10), wherein the plurality of oxidized portions includes a plurality of oxidized portion groups arranged in a radial direction of the oxidized region. (12) The surface light-emitting device according to any one of (1) to (11), wherein the oxidized region includes another oxidized portion surrounding the plurality of oxidized portions.(13) The surface-emitting device according to (12), wherein the oxidized portion and the another oxidized portion have different thicknesses. (14) The surface-emitting device according to (12) or (13), wherein the another oxidized portion is thicker than the oxidized portion. (15) The surface-emitting device according to any one of (1) to (14), wherein the light-emitting element portion is provided with an insulating region surrounding at least the inner peripheral end of the region in which the plurality of oxidized portions are arranged. (16) The surface-emitting device according to any one of (1) to (15), wherein a part of an electrode is provided on the surface of the light-emitting element portion facing the second structure, and another part of the electrode is provided in the hole via an insulating film. (17) The surface-emitting device according to any one of (1) to (16), wherein the oxidized constriction layer is provided in the second structure, and a bottom surface of the hole is located in the first structure or the second structure. (18) The surface-emitting device according to any one of (1) to (17), wherein the oxidized constriction layer is provided in the first structure, and a bottom surface of the hole is located in the first structure. (19) The surface-emitting device according to any one of (1) to (18), wherein a plurality of the oxidized constriction layers are stacked, and the hole penetrates the oxidized region of each of the plurality of oxidized constriction layers. (20) The surface-emitting device according to any one of (1) to (19), wherein a ratio of an average inner diameter of the hole corresponding to the oxidized portion to an oxidized width of the oxidized portion is 1 / 4 or more. (21) The surface-emitting device according to any one of (1) to (20), wherein a ratio of an average inner diameter of the hole corresponding to the oxidized portion to an oxidized width of the oxidized portion is 1 / 2 or more. (22) The surface-emitting device according to any one of (1) to (21), wherein a ratio of an average inner diameter of the hole corresponding to the oxidized portion to an oxidized width of the oxidized portion is 1 or more. (23) The surface-emitting device according to any one of (16) to (22), wherein the electrode contains at least one type of metal. (24) A surface-emitting element described in any one of (1) to (23), wherein the light-emitting element portion has a mesa structure including at least a portion of the first semiconductor structure, the light-emitting layer, and the second semiconductor structure.(25) A method for manufacturing a surface light emitting device, comprising: a step of laminating a plurality of layers including a light emitting layer and an oxidizable layer on a substrate to produce a laminate; a step of forming a plurality of holes on a surface of the laminate opposite to the substrate side, each of the holes penetrating the oxidizable layer; and a step of oxidizing the oxidizable layer from the side exposed to each of the plurality of holes. (26) The method for manufacturing a surface light emitting device according to (25), further comprising a step of oxidizing the oxidizable layer from the outer periphery side.

[0256] 10, 10-1, 10-2, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120: surface-emitting device 102: first semiconductor multilayer film reflector (part of first semiconductor structure) 103: first cladding layer (part of first semiconductor structure) 104: light-emitting layer 105: second cladding layer (part of second semiconductor structure) 106: oxidized constriction layer 106a: non-oxidized region 106b: oxidized region 106b1: first oxidized portion (oxidized portion) 106b1G: first oxidized portion group (oxidized portion group) 106b2: second oxidized portion (oxidized portion) 106b2G: second oxidized portion group (oxidized portion group) 106b3: third oxidized portion (another oxidized portion) 106b3': third oxidized portion (oxidized portion) 106b3G: Third oxidized portion group (oxidized portion group) 107: Second semiconductor multilayer film reflector (part of second semiconductor structure) 108: Anode electrode (electrode) 114A: Insulating film 114B: Insulating film LE: Light emitting element portion ST1: First structure ST2: Second structure SS1: First semiconductor structure SS2: Second semiconductor structure H1: First hole H1G: First hole group H2: Second hole H2G: Second hole group

Claims

1. A surface-emitting device comprising: a light-emitting element portion including: a first structure including a first semiconductor structure; a second structure stacked on the first structure and including a second semiconductor structure; and a light-emitting layer disposed between the first and second structures, wherein an oxidation constriction layer is provided within the first structure and / or the second structure, the oxidation constriction layer having a non-oxidized region and an oxidized region surrounding the non-oxidized region, wherein a plurality of holes in which a solid or gas layer is provided, each of which penetrates the oxidized region, are formed on a surface of the light-emitting element portion facing the second structure, the oxidized region having a plurality of oxidized portions through which the plurality of holes individually penetrate, and the radial width of each of the plurality of oxidized portions is less than 1 / 2 of an average inner diameter of the oxidized region.

2. The surface light emitting device according to claim 1, wherein the width is 1 / 3 or less of the average inner diameter.

3. The surface light emitting device according to claim 1, wherein each of the plurality of oxidation portions surrounds a corresponding one of the holes.

4. The surface light emitting device according to claim 1, wherein each of the plurality of oxidized portions is annular in a plan view.

5. The surface light emitting device according to claim 1, wherein two of the oxidized portions individually corresponding to two adjacent holes partially overlap each other.

6. The surface light emitting device according to claim 1, wherein the plurality of holes are arranged so as to surround the non-oxidized region.

7. The surface light emitting device according to claim 6, wherein the plurality of holes includes at least one hole group in which a plurality of the holes are arranged in a circumferential manner so as to surround the non-oxidized region.

8. The surface light emitting device according to claim 7, wherein the plurality of holes includes a plurality of groups of holes arranged in a radial direction of the oxidized region.

9. The surface light emitting device according to claim 1, wherein the plurality of oxidized portions are arranged so as to surround the non-oxidized region.

10. The surface light emitting device according to claim 9, wherein the plurality of oxidized portions include at least one oxidized portion group in which a plurality of the oxidized portions are arranged in a circular pattern so as to surround the non-oxidized region.

11. The surface light emitting device according to claim 10, wherein the plurality of oxidized portions include a plurality of groups of the oxidized portions arranged in a radial direction of the oxidized region.

12. The surface light emitting element according to claim 1, wherein the oxidized region has another oxidized portion surrounding the plurality of oxidized portions.

13. The surface light emitting device according to claim 12, wherein the oxidized portion and the another oxidized portion have different thicknesses.

14. The surface light emitting element according to claim 13, wherein the another oxidized portion is thicker than the oxidized portion.

15. The surface light emitting device according to claim 1, wherein said light emitting element portion is provided with an insulating region surrounding at least the inner peripheral end of the region in which said plurality of oxidized portions are arranged.

16. The surface light emitting device according to claim 1, wherein a part of an electrode is provided on a surface of said light emitting element portion facing said second structure, and another part of said electrode is provided in said hole via an insulating film.

17. The surface light emitting device according to claim 1, wherein the oxide constriction layer is provided within the second structure, and the bottom surface of the hole is located within the first structure or the second structure.

18. The surface light emitting device according to claim 1, wherein the oxide constriction layer is provided within the first structure, and the bottom surface of the hole is located within the first structure.

19. The surface light emitting device according to claim 1, wherein a plurality of the oxidized constriction layers are laminated, and the hole penetrates the oxidized region of each of the plurality of the oxidized constriction layers.

20. A method for manufacturing a surface-emitting device, comprising: a step of stacking a plurality of layers, including a light-emitting layer and an oxidizable layer, on a substrate to produce a laminate; a step of forming a plurality of holes on the surface of the laminate opposite the substrate, each of the holes penetrating the oxidizable layer; and a step of oxidizing the oxidizable layer from the side exposed to each of the plurality of holes.

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