Through-silicon via adapter board structure and manufacturing method therefor

Abstract

The present application relates to the technical field of integrated circuit packaging, and discloses a through-silicon via adapter board structure and a manufacturing method therefor. The through-silicon via adapter board structure comprises: a first substrate comprising a first surface and a second surface which are opposite to each other, wherein a first recess is formed in the first surface; a second substrate provided on the second surface; a conductive connecting structure comprising a first conductive connecting body provided below the first recess, wherein the first conductive connecting body comprises a first conductive member and a second conductive member which are provided corresponding to each other, the first conductive member is located in the first substrate, and the second conductive member is located in the second substrate; a coil surrounding the edge of the first surface; and a micro-channel structure located below an area defined by the coil and suitable for introducing a cooling liquid comprising a magnetic fluid, wherein the micro-channel structure comprises a transverse micro-channel and a plurality of longitudinal micro-channels, the transverse micro-channel is formed on the second substrate and is provided with a liquid inlet and a liquid outlet, the longitudinal micro-channels are formed in the first substrate and are communicated with the transverse micro-channel. Smooth flow of the cooling liquid and a good heat dissipation effect are realized.

Description

A through silicon via adapter plate structure and preparation method thereof

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on November 21, 2023, with application number 202311561512.0 and invention name “A silicon through-hole adapter plate structure and its preparation method”, the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the technical field of integrated circuit packaging, and in particular to a through silicon via adapter plate structure and a preparation method thereof. Background Art

[0004] As chip integration continues to increase, the density of transistors within a chip is increasing. However, this high integration also presents severe heat dissipation challenges. Specifically, high integration leads to a significant increase in chip power consumption. Enhanced functionality means more transistors are activated at the same time, generating greater current and heat. This leads to a sharp increase in power consumption density per unit chip volume, which in turn causes the chip temperature to rise rapidly. Prolonged exposure to high temperatures can accelerate the aging of electronic components and the electron migration effect, shortening the chip's lifespan. It can also lead to slower signal transmission speeds, increased noise, and a decrease in the critical performance of electronic devices. Therefore, chip heat dissipation solutions require continuous innovation and improvement to meet these challenges.

[0005] Microfluidic cooling technology is a novel heat dissipation solution that introduces tiny channels and microstructures into a through-silicon via (TSV) adapter plate or chip, directing coolant into the chip or its surrounding area to quickly transfer and dissipate the heat generated by the chip. TSV adapter plates maximize the density of chip stacking in three dimensions, minimize interconnect lines between chips, and minimize overall dimensions. Vertical interconnection reduces interconnect length, reduces signal delay, and lowers capacitance / inductance, enabling low power consumption between chips, high-speed communication, increased bandwidth, and miniaturized device integration.

[0006] However, current microchannel heat dissipation technology is still immature, and the coolant has difficulty flowing smoothly in the microchannel, so it is unable to completely remove the heat from the chip or its surrounding areas. The heat exchange effect is poor, and it is difficult to ensure good heat dissipation effect of the device.

[0007] Summary of the Invention

[0008] In view of this, the present application provides a through silicon via adapter plate structure and a preparation method thereof to solve the problem of insufficient heat dissipation caused by high integration in chip integrated devices.

[0009] In a first aspect, the present application provides a through silicon via adapter plate structure, comprising:

[0010] A first substrate, a second substrate, a conductive connection structure, a coil and a micro-channel structure, wherein:

[0011] The first substrate includes a first surface and a second surface disposed opposite each other. A first groove is formed on the first surface of the first substrate, and a first chip is disposed in the first groove. The second substrate is disposed on the second surface of the first substrate. The conductive connection structure includes a first conductive connector that vertically penetrates the first and second substrates, and the first conductive connector is disposed below the first groove. The first conductive connector includes a first conductive member and a second conductive member disposed correspondingly, the first conductive member being disposed in the first substrate, and the second conductive member being disposed in the second substrate. A coil is disposed on the first surface of the first substrate and is formed around an edge of the first surface. The coil is adapted to generate a magnetic field when energized. A microchannel structure is formed in the first and second substrates and is located below the area surrounded by the coil. A cooling liquid is adapted to flow into the microchannel structure to remove heat from the first and second substrates. The cooling liquid includes a magnetic fluid. The microchannel structure includes a transverse microchannel and a plurality of longitudinal microchannels. The transverse microchannel is formed on a surface of the second substrate adjacent to the first substrate, and the transverse microchannel has a liquid inlet and a liquid outlet. The liquid inlet is for the inflow of the cooling liquid, and the liquid outlet is for the outflow of the cooling liquid. The longitudinal microchannel is formed in the first substrate and is connected to the transverse microchannel.

[0012] Beneficial effects: By setting up a microfluidic structure including a horizontal microfluidic channel and several longitudinal microfluidic channels connected to the horizontal microfluidic channels, and setting a coil surrounding the area where the microfluidic channels are located above the microfluidic structure, when a coolant containing a magnetic fluid is introduced into the microfluidic structure, the magnetic force generated by the energization of the coil will drive the magnetic fluid to carry the coolant into the longitudinal microfluidic channel, and the magnetic fluid itself has good thermal conductivity, thereby realizing rapid heat exchange with the high-temperature area of ​​the first substrate around the longitudinal microfluidic channel. After the coil is powered off, the magnetic fluid falls into the transverse microfluidic channel under the dual action of gravity and flow field, and then leaves from the liquid outlet, thereby realizing heat dissipation of the through silicon via adapter plate structure.

[0013] During this process, the coolant flows smoothly in the microchannel structure, and because the coolant includes a magnetic fluid, its entry into the "dead end" of the longitudinal microchannel mainly depends on the magnetic force generated by the coil being energized. The magnitude of the magnetic force on the magnetic fluid can be precisely controlled by the magnitude of the current. The magnetic fluid in the microchannel structure uses a relatively small magnetic force, usually tens to hundreds of gauss, to achieve its controlled movement, which can ensure that the coolant enters the longitudinal microchannel quickly and efficiently, and will not affect the chip under this magnetic force strength. After the coil is powered off, the coolant in the longitudinal microchannel can also smoothly fall back to the horizontal microchannel, and will not gather at the top of the longitudinal microchannel, and will not affect the subsequent heat exchange between the coolant and the first substrate, thereby ensuring the heat dissipation effect. In addition, the first chip placed in the first groove has a non-single contact surface on the bottom and side surfaces with the first substrate, with a large heat conduction area, which can carry out good heat exchange.

[0014] In an optional embodiment, the transverse microchannel is formed into an S-shape or a broken line shape; the longitudinal microchannel is formed into a straight line shape, and a plurality of the longitudinal microchannels are arranged at intervals in an array.

[0015] In this application, the zigzag or S-shaped transverse microchannels ensure a larger heat exchange area on the surface of the second substrate near the first substrate. The array of longitudinal microchannels, spaced apart, facilitates communication with the transverse microchannels, providing effective heat exchange area for a larger number of first chips requiring heat dissipation. The transverse microchannels extend in a zigzag or S-shaped pattern from the liquid inlet to the liquid outlet, passing through all the linear longitudinal microchannels, ensuring sufficient effective heat exchange area and improving heat dissipation performance.

[0016] In an optional embodiment, the magnetic fluid includes silicate ferrite magnetic fluid, graphene magnetic fluid, and barium ferrite magnetic fluid.

[0017] In this application, the magnetic fluid is selected from materials with high thermal conductivity and high demagnetization temperature such as silicate ferrite magnetic fluid, graphene magnetic fluid, barium ferrite magnetic fluid, etc., which can be recycled. The position of the magnetic fluid can be precisely controlled by controlling the coil current to achieve precise heat dissipation.

[0018] In an optional embodiment, a heat-conducting layer is further provided in the first groove, and the heat-conducting layer is provided on the bottom surface and the side wall surface of the first groove.

[0019] In the present application, thermal conductive material is filled on the bottom surface and side wall surface of the first chip placed in the first groove in contact with the first groove to conduct the heat generated by the first chip to the first substrate, and then the heat is taken away by the coolant entering the microchannel structure, thereby achieving good heat dissipation of the first chip and its surrounding areas.

[0020] In an optional embodiment, the conductive connection structure also includes: a number of second conductive connectors vertically passing through the first substrate and the second substrate, the second conductive connectors are located in the first substrate where the first groove is not formed; the second conductive connectors include correspondingly arranged third conductive parts and fourth conductive parts, the third conductive part is located in the first substrate, and the fourth conductive part is located in the second substrate.

[0021] In the present application, the second conductive connector provides a conductive connection structure for arranging more chips, thereby ensuring the integration of the chips on the through silicon via adapter plate structure.

[0022] In an optional embodiment, it also includes: a first redistribution layer, arranged on the first surface of the first substrate, and the coil is arranged on the first redistribution layer; a second redistribution layer, arranged on the surface of the second substrate away from the first substrate, the first conductive connector connects the first chip and the second redistribution layer, and the second conductive connector connects the first redistribution layer and the second redistribution layer.

[0023] In this application, a redistribution layer is provided on the upper and lower surfaces of the through silicon via adapter plate structure, respectively, which serves as an electrical extension and interconnection between the horizontal and vertical surfaces, facilitating the integration of chips of different types and sizes and ensuring heterogeneous integration of individual chips.

[0024] In an optional embodiment, it also includes: an insulating layer, which is arranged on the side of the first redistribution layer away from the first substrate and surrounds the first redistribution layer, and a second groove is formed on the surface of the insulating layer away from the first redistribution layer, and a second chip is arranged in the second groove, and the second chip is conductively connected to the first redistribution layer; the coil is installed in the insulating layer, and the coil is suitable for being connected to the first redistribution layer or to an external power supply.

[0025] In the present application, the insulating layer can well protect the second chip, the first redistribution layer and the coil while ensuring that the second chip is partially exposed to the external environment, thereby helping to improve the connection reliability between the various structures.

[0026] In an optional embodiment, it also includes: a first connection point, which is arranged on a side of the first redistribution layer away from the first substrate and is suitable for connecting to the second chip; and a second connection point, which is arranged on a side of the second redistribution layer away from the second substrate.

[0027] In an optional embodiment, the conductive connection structure is configured as a copper column.

[0028] In a second aspect, the present application provides a method for preparing a through silicon via adapter plate structure, which is used to prepare the above-mentioned through silicon via adapter plate structure, comprising the following steps:

[0029] Providing a first substrate, the first substrate comprising a first surface and a second surface oppositely disposed;

[0030] forming a first groove on the first surface of the first substrate, wherein the first groove is suitable for arranging a first chip;

[0031] forming a first conductive member vertically penetrating below the first groove of the first substrate;

[0032] Winding a coil around an edge of the first surface of the first substrate;

[0033] forming a plurality of longitudinal microchannels on the second surface of the first substrate;

[0034] A second substrate is provided, on which a transverse microchannel, a liquid inlet, a liquid outlet, and a second conductive member are formed; the transverse microchannel is suitable for admitting a cooling liquid, the liquid inlet and the liquid outlet are respectively connected to two ends of the transverse microchannel, and the second conductive member is spaced apart from the transverse microchannel; the cooling liquid is suitable for mixing with a magnetic fluid and then flowing into the transverse microchannel from the liquid inlet, and then flowing out of the liquid outlet after passing through the longitudinal microchannel;

[0035] The second substrate is bonded to the first substrate so that the second conductive member is connected to the first conductive member correspondingly to form a first conductive connection body.

[0036] Beneficial effects: When the above method is used to prepare a through-silicon via adapter plate structure, one-time molding of microchannels of different depths can be achieved by controlling the photoresist aperture during etching. The process of molding the microchannel structure is simple and can be easily achieved using existing machines and technologies.

[0037] Through the microfluidic structure including longitudinal microchannels and horizontal microchannels, coils and cooling liquid including magnetic fluid, the smooth flow of cooling liquid in the microchannel structure can be achieved. The magnitude of the magnetic force exerted on the magnetic fluid can be precisely controlled by the magnitude of the current. A smaller magnetic force, typically tens to hundreds of gauss, can be used to achieve its controlled movement. The cooling liquid enters the longitudinal microchannel quickly and efficiently, and will not affect the chip under this magnetic force strength. After the coil is powered off, the cooling liquid in the longitudinal microchannel can also fall back to the horizontal microchannel smoothly, and will not gather at the top of the longitudinal microchannel, and will not affect the subsequent heat exchange between the cooling liquid and the first substrate. The heat dissipation effect can be guaranteed while ensuring the integration of the device.

[0038] In addition, the magnetic fluid itself has good thermal conductivity, which can achieve rapid heat exchange with the high-temperature area of ​​the first substrate around the longitudinal microchannel; and the first chip has five contact surfaces with the first substrate, with a large thermal conductivity area, which can achieve good heat exchange.

[0039] In an optional embodiment, before forming a vertically penetrating first conductive member below the first groove of the first substrate, the method further includes:

[0040] forming a heat-conducting layer on the bottom surface and sidewall surface of the first groove, so that the heat-conducting layer is filled between the first chip and the first groove;

[0041] Disposing a temporary carrier on the first surface of the first substrate to thin the second surface of the first substrate;

[0042] After forming a vertically penetrating first conductive member below the first groove of the first substrate, the method further includes:

[0043] forming a third conductive member in the first substrate where the first groove is not formed;

[0044] The temporary carrier plate is removed.

[0045] In the present application, the second surface of the first substrate where the first groove is not formed is thinned to facilitate the formation of a conductive structure on the first substrate; the provision of a temporary carrier facilitates ensuring that the first substrate itself is not damaged such as bending while thinning the first substrate, especially ensuring the integrity of the first groove on the first surface of the first substrate.

[0046] In an optional embodiment, before the coil is wound around the outer edge of the first surface of the first substrate, the method further includes:

[0047] forming a first redistribution layer on the first surface of the first substrate;

[0048] A first connection point is formed on a surface of the first redistribution layer at a side away from the first substrate. The first redistribution layer is suitable for conductively connecting to the second chip through the first connection point.

[0049] In an optional embodiment, after the coil is wound around the outer edge of the first surface of the first substrate, the method further includes:

[0050] An insulating layer is provided on the first redistribution layer to surround the first redistribution layer and the coil, and a second groove suitable for mounting a second chip is formed on the insulating layer;

[0051] The insulating layer is thinned so that a surface of the second chip away from the first substrate protrudes beyond a surface of the insulating layer away from the first substrate.

[0052] In an optional embodiment, the step of forming a transverse microchannel, a coolant inlet and outlet, and a second conductive member on one side surface of the second substrate further includes:

[0053] A fourth conductive member is formed on a surface of the second substrate close to the first substrate, so that the fourth conductive member is connected to the third conductive member to form a second conductive connection body.

[0054] In an optional embodiment, after the second substrate is mounted on the second surface of the first substrate, the method further includes:

[0055] Thinning the side of the second substrate away from the first substrate so that the second conductive member, the fourth conductive member, and the liquid inlet and the liquid outlet protrude from the surface of the second substrate away from the first substrate;

[0056] forming a second redistribution layer on a surface of the second substrate away from the first substrate, wherein the second redistribution layer is electrically connected to the second conductive member and the fourth conductive member;

[0057] A second connection point is formed on a side of the second redistribution layer away from the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0059] FIG1 is a schematic structural diagram of a through silicon via adapter plate structure provided in an embodiment of the present application;

[0060] FIG2 is a schematic top view of a through silicon via adapter plate structure provided in an embodiment of the present application;

[0061] 3 to 15 are schematic diagrams of the steps of preparing a through silicon via adapter plate structure in an embodiment of the present application;

[0062] Description of reference numerals:

[0063] A, first chip; B, second chip; C, temporary carrier board;

[0064] 100, first substrate; 101, first surface; 102, second surface; 103, first groove;

[0065] 200, second substrate;

[0066] 300, conductive connection structure; 301, first conductive connection body; 3011, first conductive element; 3012, second conductive element; 302, second conductive connection body; 3021, third conductive element; 3022, fourth conductive element;

[0067] 400, coil;

[0068] 501, transverse microchannel; 502, longitudinal microchannel; 503, liquid inlet; 504, liquid outlet;

[0069] 600, thermal conductive layer;

[0070] 701, first redistribution layer; 702, second redistribution layer;

[0071] 800, insulating layer; 801, second groove;

[0072] 901, first connection point; 902, second connection point. DETAILED DESCRIPTION

[0073] The present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific examples described herein are intended only to illustrate the present application and are not intended to limit the present application. It should also be noted that, for ease of description, the drawings only illustrate some, but not all, structures relevant to the present application. In the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion regarding the concepts of the present application. The accompanying drawings illustrate various schematic diagrams of structures according to embodiments of the present application. These figures are not drawn to scale; certain details may be exaggerated or omitted for clarity. The shapes, relative sizes, and positional relationships of various regions and layers shown in the figures are merely illustrative and may vary in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions based on actual needs. In the context of the present application, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or an intervening layer / element may exist between them. In addition, if a layer / element is "on" another layer / element in one orientation, then when the orientation is reversed, the layer / element would be "below" the other layer / element.

[0074] As chip integration continues to increase, the density of transistors within a chip is increasing, placing higher demands on the heat dissipation of chip packaging components. Specifically, high integration leads to a significant increase in chip power consumption. Enhanced functionality means more transistors are activated at the same time, generating greater current and heat. This leads to a sharp increase in power consumption density per unit chip volume, which in turn causes a rapid increase in chip temperature. Prolonged exposure to high temperatures can accelerate the aging of electronic components and the electromigration effect, shortening the chip's lifespan. It can also slow signal transmission, increase noise, and reduce the critical performance of electronic devices.

[0075] Microfluidic cooling technology is a novel heat dissipation solution. By introducing tiny channels and microstructures within a through-silicon via (TSV) adapter plate or chip, coolant can be directed into the chip or its surrounding area, enabling rapid transfer and dissipation of heat generated by the chip. TSV adapter plates maximize the three-dimensional stacking density of chips, minimize interconnect lines between chips, and minimize overall dimensions. By vertically interconnecting, they reduce interconnect length, signal latency, and capacitance / inductance, enabling low power consumption between chips, high-speed communication, increased bandwidth, and miniaturized device integration.

[0076] However, current microchannel heat dissipation technology is still immature, making it difficult to achieve a single path from the coolant inlet to the outlet 504, with smooth flow up and down. The main flow path for the coolant is the transverse microchannel 501, and the longitudinal microchannel 502 often forms a "dead end," making it impossible to fully replace the coolant in the longitudinal microchannel 502. In addition, the coolant's specific gravity decreases as the temperature rises, and it tends to accumulate at the top of the longitudinal microchannel 502, thus affecting the coolant's good heat exchange effect within the longitudinal microchannel 502 and making it difficult to ensure the ultimate heat dissipation effect.

[0077] In this embodiment, a through silicon via adapter plate structure is provided to achieve smooth circulation of the coolant in the transverse microchannel 501 and the longitudinal microchannel 502. The coolant does not gather at the top of the longitudinal microchannel 502, and is fully replaced in the longitudinal microchannel 502, thereby achieving good heat exchange and ensuring the heat dissipation effect of the through silicon via adapter plate structure.

[0078] The TSV adapter plate structure of this embodiment, as shown in FIG1 and FIG2 , includes:

[0079] The first substrate 100, the second substrate 200, the conductive connection structure 300, the coil 400 and the micro-channel structure,

[0080] The first substrate 100 includes a first surface 101 and a second surface 102 arranged opposite to each other. A first groove 103 is formed on the first surface 101 of the first substrate 100, and the first groove 103 is suitable for arranging the first chip A. The second substrate 200 is arranged on the second surface 102 of the first substrate 100. The conductive connection structure 300 includes a first conductive connection body 301 vertically passing through the first substrate 100 and the second substrate 200. The first conductive connection body 301 is arranged below the first groove 103. The first conductive connection body 301 includes a first conductive member 3011 and a second conductive member 3012 arranged correspondingly. The first conductive member 3011 is located in the first substrate 100, and the second conductive member 3012 is located in the second substrate 200. The coil 400 is arranged on the first surface 101 of the first substrate 100. The coil 400 is formed on the edge of the first surface 101 and is suitable for generating a magnetic field after being energized; the microchannel structure is formed in the first substrate 100 and the second substrate 200 and is located below the area enclosed by the coil 400. The microchannel structure is suitable for passing a cooling liquid to take away the heat in the first substrate 100 and the second substrate 200, and the cooling liquid includes a magnetic fluid; the microchannel structure includes a transverse microchannel 501 and a plurality of longitudinal microchannels 502. The transverse microchannel 501 is formed on the surface of the second substrate 200 close to the first substrate 100, and the transverse microchannel 501 has a liquid inlet 503 and a liquid outlet 504. The liquid inlet 503 is used to flow in the cooling liquid, and the liquid outlet 504 is used to flow out the cooling liquid; the longitudinal microchannel 502 is formed in the first substrate 100 and is connected to the transverse microchannel 501.

[0081] A cooling liquid containing magnetic fluid is introduced into the liquid inlet 503 of the microchannel structure, and the cooling liquid gradually flows along the transverse microchannel 501 to the liquid outlet 504. At the same time, the coil 400 is energized to generate a magnetic field, and the magnetic force drives the magnetic fluid in the transverse microchannel 501 to move upward along the longitudinal microchannel 502, thereby driving the cooling liquid to flow upward along the longitudinal microchannel 502. After the cooling liquid in the longitudinal microchannel 502 has fully exchanged heat with the first substrate 100, the coil 400 is de-energized. Under the action of gravity and the flow field, the cooling liquid falls downward along the longitudinal microchannel 502 back to the horizontal microchannel, and then flows along the horizontal microchannel to the liquid outlet 504. As described above, the cooling liquid continues to flow in the microchannel structure, achieving sufficient heat exchange with the first substrate 100 and the second substrate 200, thereby achieving heat dissipation of the chip and its surrounding areas.

[0082] In the above-mentioned through silicon via adapter plate structure, the first chip A placed in the first groove 103 has non-single contact surfaces on the bottom and side surfaces with the first substrate 100. Specifically, the first groove 103 of this embodiment is a rectangular groove, and the first chip A is a rectangular chip. Therefore, the first chip A has five contact surfaces with the first substrate 100, and the heat conduction area is large, which can achieve good heat exchange.

[0083] In addition, by setting up a microchannel structure including a horizontal microchannel and several longitudinal microchannels 502 connected to the horizontal microchannel, and setting a coil 400 surrounding the area where the microchannel is located above the microchannel structure, when a coolant containing magnetic fluid is introduced into the microchannel structure, the magnetic force generated by the power supply of the coil 400 will drive the magnetic fluid to carry the coolant into the longitudinal microchannel 502, and the magnetic fluid itself has good thermal conductivity, thereby realizing rapid heat exchange with the high-temperature area of ​​the first substrate 100 around the longitudinal microchannel 502. After the coil 400 is powered off, the magnetic fluid falls into the transverse microchannel 501 under the dual action of gravity and flow field, and then leaves from the liquid outlet 504, thereby realizing heat dissipation of the silicon through hole adapter plate structure. During this process, the coolant flows smoothly within the microchannel structure. Since the coolant includes a magnetic fluid, its entry into the "dead end" of the longitudinal microchannel 502 depends primarily on the magnetic force generated by the power supply to the coil 400. The magnitude of the magnetic force applied to the magnetic fluid can be precisely controlled by the magnitude of the current. The magnetic fluid in the microchannel structure uses a relatively small magnetic force, typically tens to hundreds of gauss, to achieve controlled movement. This ensures that the coolant enters the longitudinal microchannel 502 quickly and efficiently, and that this magnetic force intensity does not affect the chip. After the coil 400 is powered off, the coolant in the longitudinal microchannel 502 can also smoothly fall back to the horizontal microchannel, and will not accumulate at the top of the longitudinal microchannel 502, nor will it affect the subsequent heat exchange between the coolant and the first substrate 100, thus ensuring the heat dissipation effect.

[0084] It should be known that the diameters of the above-mentioned transverse microchannel 501 and longitudinal microchannel 502 should be kept consistent to ensure that the coolant will not leak at the intersection of the microchannel structure; the diameters of the liquid inlet 503 and the liquid outlet 504 of the transverse microchannel 501 are slightly larger than the diameter of the microchannel itself, which is convenient for liquid inlet and outlet and prevents the coolant from gathering at the liquid inlet 503 and the liquid outlet 504. In addition, the specific diameter of the microchannel structure should be determined according to the size of the silicon through-hole adapter plate structure and the number of installed first chips A. The different depths of the microchannel structure can be achieved by controlling the aperture of the optical ancestor during etching. This embodiment only uses one first chip A as an example.

[0085] As an optional embodiment, the transverse microchannel 501 in the microchannel structure is formed into an S-shape or a zigzag shape, the longitudinal microchannel 502 is formed into a straight line, and several longitudinal microchannels 502 are arranged in an array at intervals. The zigzag or S-shaped transverse microchannel 501 can ensure that there is a larger heat exchange area on the surface of the second substrate 200 close to the first substrate 100. The several longitudinal microchannels 502 arranged in an array at intervals are convenient for connecting with the transverse microchannel 501, and also provide an effective heat exchange area for more first chips A that need heat dissipation. The transverse microchannel 501 extends from the liquid inlet 503 to the liquid outlet 504 in a zigzag or S-shape, passing through all the straight longitudinal microchannels 502, ensuring sufficient effective heat exchange area and improving heat dissipation performance.

[0086] The above-mentioned magnetic fluid is made of materials with high thermal conductivity and high demagnetization temperature, such as silicate ferrite magnetic fluid, graphene magnetic fluid, barium ferrite magnetic fluid, etc., which can be recycled. The position of the magnetic fluid can be precisely controlled by controlling the current of the coil 400 to achieve precise heat dissipation.

[0087] In some optional embodiments, the TSV adapter plate structure further includes a heat-conducting layer 600 disposed within the first groove 103. Specifically, the heat-conducting layer 600 is disposed on the bottom and sidewall surfaces of the first groove 103. That is, a heat-conducting material is filled on the bottom and sidewall surfaces of the first chip A placed in the first groove 103 where they are in contact with the first groove 103, so as to conduct heat generated by the first chip A to the first substrate 100. The heat is then removed by the coolant entering the microchannel structure, thereby achieving good heat dissipation for the first chip A and its surrounding area.

[0088] The thermal conductive material is a dry film with thermal conductive particles added. The thermal conductive particles can be aluminum powder, aluminum oxide or graphene, etc. These thermal conductive particles make the filled thermal conductive material have good interface adhesion, heat dissipation performance and buffering performance.

[0089] In one embodiment, the TSV interposer structure may further include a plurality of second conductive connectors 302 vertically extending through the first substrate 100 and the second substrate 200. The second conductive connectors 302 are located within the first substrate 100 where the first groove 103 is not formed. The second conductive connectors 302 include corresponding third conductive members 3021 and fourth conductive members 3022. The third conductive member 3021 is located within the first substrate 100, and the fourth conductive member 3022 is located within the second substrate 200. Specifically, the first conductive connectors 301 are located within the first substrate 100 and the second substrate 200 below the first chip A, while the second conductive connectors 302 are located within the first substrate 100 and the second substrate 200 excluding the region where the first chip A is located. The second conductive connectors 302 provide a conductive connection structure 300 for arranging more chips, thereby ensuring chip integration on the TSV interposer structure.

[0090] Optionally, in one embodiment, a first redistribution layer 701 and a second redistribution layer 702 may also be provided. The first redistribution layer 701 is provided on the first surface 101 of the first substrate 100, and the coil 400 is provided on the first redistribution layer 701. The second redistribution layer 702 is provided on the surface of the second substrate 200 away from the first substrate 100. The first conductive connector 301 connects the first chip A and the second redistribution layer 702, and the second conductive connector 302 connects the first redistribution layer 701 and the second redistribution layer 702. A redistribution layer is provided on the upper and lower surfaces of the through-silicon-via adapter plate structure, respectively, to serve as electrical extension and interconnection between the horizontal and vertical surfaces, facilitating the integration of chips of different types and sizes and ensuring heterogeneous integration of individual chips.

[0091] Of course, the first redistribution layer 701 and the second redistribution layer 702 can be integrally formed on the surface of the TSV adapter structure, or they can be provided only in areas where chips are required. In this embodiment, it is optional to provide them only in areas where chips are required, thereby ensuring the independence of each chip and saving materials.

[0092] In another embodiment, the silicon through-hole via adapter plate structure further includes an insulating layer 800, which is arranged on the side of the first redistribution layer 701 away from the first substrate 100 and surrounds the first redistribution layer 701. A second groove 801 is formed on the surface of the insulating layer 800 away from the first redistribution layer 701. The second groove 801 is provided with a second chip B, and the second chip B is conductively connected to the first redistribution layer 701. The coil 400 is installed in the insulating layer 800, and the coil 400 is suitable for connecting to the first redistribution layer 701 or to an external power supply. While ensuring that the second chip B is partially exposed to the external environment, the insulating layer 800 can also well protect the second chip B, the first redistribution layer 701 and the coil 400, which helps to improve the connection reliability between the various structures. The coil 400 of this embodiment can be powered by the internal first redistribution layer 701 or externally powered, and has better applicability.

[0093] In one embodiment, the first connection point 901 and the second connection point 902 are further included. The first connection point 901 is disposed on a side of the first redistribution layer 701 away from the first substrate 100 and is suitable for connecting to the second chip B. The second connection point 902 is disposed on a side of the second redistribution layer 702 away from the second substrate 200. The provision of the connection points facilitates the electrical conduction of the redistribution layer to the outside.

[0094] In a specific embodiment, the conductive connection structure 300 is configured as a copper column, and each conductive connection body can be a circular column, a square column, or an irregular column made of copper.

[0095] An embodiment of the present application further provides a method for preparing a through silicon via adapter plate structure, which is used to prepare the above-mentioned through silicon via adapter plate structure, comprising the following steps:

[0096] S101 , providing a first substrate 100 , wherein the first substrate 100 includes a first surface 101 and a second surface 102 opposite to each other.

[0097] The first substrate 100 is placed horizontally, with the upper surface of the first substrate 100 serving as a first surface 101 and the lower surface of the first substrate 100 serving as a second surface 102. The first substrate 100 may be made of silicon.

[0098] S102 , forming a first groove 103 on the first surface 101 of the first substrate 100 , wherein the first chip A is suitable for being disposed in the first groove 103 .

[0099] A first groove 103 is formed by etching from the outside to the inside on the upper surface of the first substrate 100. The shape and depth of the first groove 103 are determined according to the chip to be integrated. In this embodiment, the first chip A is a rectangular chip, and the first groove 103 is a rectangular groove with a depth slightly greater than the chip height.

[0100] S103 , forming a vertically penetrating first conductive member 3011 below the first groove 103 of the first substrate 100 .

[0101] A vertical through hole is formed by etching in the lower area of ​​the first substrate 100 corresponding to the first groove 103, and the formed through hole is filled with the material of the first conductive member 3011. The material of the first conductive member 3011 can be copper.

[0102] S104 , winding the coil 400 on the edge of the first surface 101 of the first substrate 100 .

[0103] The coil 400 is wound around the edge of the upper surface of the first substrate 100 to ensure that the area enclosed by the coil 400 is large enough.

[0104] S105 , forming a plurality of longitudinal microchannels 502 on the second surface 102 of the first substrate 100 .

[0105] A plurality of vertical longitudinal microchannels 502 are etched from bottom to top on the lower surface of the first substrate 100. The plurality of vertical longitudinal microchannels 502 are all below the area enclosed by the coil 400. When there is coolant below the longitudinal microchannels 502, the magnetic force generated by the coil 400 can drive the coolant to flow into all the longitudinal microchannels 502.

[0106] S106, provide a second substrate 200, and form a transverse microchannel 501, a liquid inlet 503, a liquid outlet 504 and a second conductive member 3012 on the second substrate 200; the transverse microchannel 501 is suitable for passing a cooling liquid, the liquid inlet 503 and the liquid outlet 504 are respectively connected to the two ends of the transverse microchannel 501, and the second conductive member 3012 is spaced apart from the transverse microchannel 501; the cooling liquid is suitable for mixing with a magnetic fluid and then flows into the transverse microchannel 501 from the liquid inlet 503, and flows out from the liquid outlet 504 after passing through the longitudinal microchannel 502.

[0107] A transverse microchannel 501 is etched on the upper surface of the second substrate 200, and a liquid inlet 503 and a liquid outlet 504 are formed at both ends of the transverse microchannel 501. Then, a plurality of grooves are longitudinally etched in the area of ​​the second substrate 200 where the transverse microchannel 501 is not provided, and a conductive material is filled in the grooves to form a second conductive member 3012. The diameter of the second conductive member 3012 is equal to that of the first conductive member 3011.

[0108] S107 , bonding the second substrate 200 to the first substrate 100 , so that the second conductive member 3012 is connected to the first conductive member 3011 correspondingly to form a first conductive connection body 301 .

[0109] The upper surface of the second substrate 200 is bonded to the lower surface of the first substrate 100 so that the first conductive member 3011 and the second conductive member 3012 are relatively aligned to form a complete first conductive connector 301. The longitudinal microchannel 502 and the transverse microchannel 501 are connected to form a relatively closed microchannel structure, providing space for the flow of the coolant. Driven by the magnetic field generated by the coil 400, the magnetic fluid in the coolant can drive the coolant to flow upward from the transverse microchannel 501 into the longitudinal microchannel 502. After the coil 400 is powered off, the coolant can fall back from the longitudinal microchannel 502 to the transverse microchannel 501 under the action of gravity and the flow field, achieving sufficient heat exchange between the first chip A and its surrounding area and the coolant, thereby achieving effective heat dissipation of the through-silicon-via adapter plate structure.

[0110] When the above method is used to prepare a through-silicon via adapter plate structure, one-time molding of microchannels of different depths can be achieved by controlling the photoresist aperture during etching. The process of molding the microchannel structure is simple and can be easily achieved using existing machines and technologies.

[0111] By means of the microchannel structure comprising the longitudinal microchannel 502 and the horizontal microchannel, the coil 400 and the cooling liquid comprising the magnetic fluid, it is possible to achieve smooth flow of the cooling liquid in the microchannel structure. The magnitude of the magnetic force exerted on the magnetic fluid can be precisely controlled by the magnitude of the current. A relatively small magnetic force, typically tens to hundreds of gauss, can be used to achieve its controlled movement. The cooling liquid enters the longitudinal microchannel 502 quickly and efficiently, and will not affect the chip under such a magnetic force strength. After the coil 400 is powered off, the cooling liquid in the longitudinal microchannel 502 can also smoothly fall back to the horizontal microchannel and will not gather at the top of the longitudinal microchannel 502, thereby not affecting the subsequent heat exchange between the cooling liquid and the first substrate 100. This ensures the heat dissipation effect while ensuring the device integration.

[0112] In addition, the magnetic fluid itself has good thermal conductivity, which can achieve rapid heat exchange with the high-temperature area of ​​the first substrate 100 around the longitudinal microchannel 502; and the first chip A has five contact surfaces with the first substrate 100, with a large thermal conductivity area, which can achieve good heat exchange.

[0113] The following will describe in detail the steps for preparing the TSV adapter plate structure with reference to Figures 3 to 15:

[0114] S201 , as shown in FIG3 , provides a first substrate 100 , wherein the first substrate 100 includes a first surface 101 and a second surface 102 opposite to each other.

[0115] The first substrate 100 is placed horizontally, with the upper surface of the first substrate 100 serving as a first surface 101 and the lower surface of the first substrate 100 serving as a second surface 102. The first substrate 100 may be made of silicon.

[0116] S202 , as shown in FIG4 , forms a first groove 103 on the first surface 101 of the first substrate 100 , wherein the first chip A is suitable for being disposed in the first groove 103 .

[0117] A first groove 103 is formed by etching from the outside to the inside on the upper surface of the first substrate 100. The shape and depth of the first groove 103 are determined according to the chip to be integrated. In this embodiment, the first chip A is a rectangular chip, and the first groove 103 is a rectangular groove with a depth slightly greater than the chip height.

[0118] S203 , as shown in FIG. 5 , forming a heat conducting layer 600 on the bottom surface and sidewall surface of the first groove 103 , so that the heat conducting layer 600 is filled between the first chip A and the first groove 103 .

[0119] Thermally conductive material is filled on the bottom surface and side wall surface of the first chip A placed in the first groove 103 in contact with the first groove 103 to conduct the heat generated by the first chip A to the first substrate 100, and then the heat is taken away by the cooling liquid entering the microchannel structure, thereby achieving good heat dissipation for the first chip A and its surrounding areas.

[0120] S204 , as shown in FIG6 , a temporary carrier C is disposed on the first surface 101 of the first substrate 100 to thin the second surface 102 of the first substrate 100 .

[0121] The second surface 102 of the first substrate 100 where the first groove 103 is not formed is thinned to facilitate forming a conductive structure on the first substrate 100; the provision of the temporary carrier C facilitates ensuring that the first substrate 100 itself is not damaged such as bending while thinning the first substrate 100, especially ensuring the integrity of the first groove 103 on the first surface 101 of the first substrate 100.

[0122] S205 , forming a vertically penetrating first conductive member 3011 below the first groove 103 of the first substrate 100 .

[0123] A vertical through hole is formed by etching in the lower area of ​​the first substrate 100 corresponding to the first groove 103, and the formed through hole is filled with the material of the first conductive member 3011. The material of the first conductive member 3011 can be copper.

[0124] S206 , as shown in FIG. 7 , a third conductive member 3021 is formed in the first substrate 100 where the first groove 103 is not formed.

[0125] A first conductive member 3011 is formed under the first groove 103 of the first substrate 100, and a through hole is formed under the area where the first groove 103 is not formed, and then filled with conductive material to form the third conductive member 3021; ​​the difficulty of forming the first conductive member 3011 and the third conductive member 3021 on the thinned first substrate 100 is reduced.

[0126] S207, as shown in FIG7, remove the temporary carrier C.

[0127] S208 , forming a first redistribution layer 701 on the first surface 101 of the first substrate 100 .

[0128] As shown in FIG. 8 , a first redistribution layer 701 is laid on the upper surface of the first substrate 100 to conductively connect the upper end of the third conductive member 3021 and the upper surface of the first chip A.

[0129] S209 , as shown in FIG8 , forming a first connection point 901 on a surface of the first redistribution layer 701 away from the first substrate 100 , wherein the first redistribution layer 701 is suitable for conductively connecting to the second chip B through the first connection point 901 .

[0130] The first connection point 901 may be a solder point or other conductive connection point. The first connection point 901 is provided on the upper surface of the first redistribution layer 701 to facilitate connection to the second chip B. This embodiment uses two second chips B as an example for description.

[0131] S210 , as shown in FIG9 , a coil 400 is wound around the edge of the first surface 101 of the first substrate 100 .

[0132] The coil 400 is wound around the edge of the upper surface of the first substrate 100 to ensure that the area enclosed by the coil 400 is large enough.

[0133] S211 , as shown in FIG. 10 , an insulating layer 800 is disposed on the first redistribution layer 701 and surrounds the first redistribution layer 701 and the coil 400 . A second groove 801 suitable for mounting the second chip B is formed on the insulating layer 800 .

[0134] Optionally, a second groove 801 is provided above the second conductive connector 302 to enable the second chip B provided in the second groove 801 to be electrically led out more quickly; the upper end of the first connection point 901 is connected to the second chip B.

[0135] S212 , as shown in FIG. 10 , thinning the insulating layer 800 so that the surface of the second chip B away from the first substrate 100 protrudes from the surface of the insulating layer 800 away from the first substrate 100 .

[0136] That is, the upper end of the second chip B protrudes from the second groove 801 , which facilitates further integration processing on the upper surface of the second chip B.

[0137] S213 , as shown in FIG. 11 , a plurality of longitudinal microchannels 502 are formed on the second surface 102 of the first substrate 100 .

[0138] A plurality of vertical longitudinal microchannels 502 are etched from bottom to top on the lower surface of the first substrate 100. The plurality of vertical longitudinal microchannels 502 are all below the area enclosed by the coil 400. When there is coolant below the longitudinal microchannels 502, the magnetic force generated by the coil 400 can drive the coolant to flow into all the longitudinal microchannels 502.

[0139] S214, as shown in Figure 12, provides a second substrate 200, and forms a transverse microchannel 501, a liquid inlet 503, a liquid outlet 504 and a second conductive member 3012 on the second substrate 200; the transverse microchannel 501 is suitable for passing cooling liquid, the liquid inlet 503 and the liquid outlet 504 are respectively connected to the two ends of the transverse microchannel 501, and the second conductive member 3012 is spaced apart from the transverse microchannel 501; the cooling liquid is suitable for mixing with the magnetic fluid and then flows into the transverse microchannel 501 from the liquid inlet 503, and flows out from the liquid outlet 504 after passing through the longitudinal microchannel 502.

[0140] In addition, a fourth conductive member 3022 is formed on a surface of the second substrate 200 close to the first substrate 100 , so that the fourth conductive member 3022 is connected to the third conductive member 3021 to form a second conductive connection 302 .

[0141] A transverse microchannel 501 is etched on the upper surface of the second substrate 200, and a liquid inlet 503 and a liquid outlet 504 are formed at both ends of the transverse microchannel 501. Then, a plurality of grooves are longitudinally etched in the area of ​​the second substrate 200 where the transverse microchannel 501 is not provided, and conductive materials are filled in different grooves to form a second conductive member 3012 in the middle area and a fourth conductive member 3022 in the side area. The diameter of the second conductive member 3012 is equal to that of the first conductive member 3011, and the diameter of the fourth conductive member 3022 is equal to that of the third conductive member 3021.

[0142] It can be seen that the etching height of the horizontal microchannel on the second substrate 200 is lower than the height of the formed second conductive member 3012 and the fourth conductive member 3022 .

[0143] S215 , as shown in FIG. 13 , the second substrate 200 is bonded to the first substrate 100 , so that the second conductive member 3012 is connected to the first conductive member 3011 correspondingly to form a first conductive connection body 301 .

[0144] The upper surface of the second substrate 200 is bonded to the lower surface of the first substrate 100 so that the first conductive member 3011 and the second conductive member 3012 are relatively aligned to form a complete first conductive connector 301. The longitudinal microchannel 502 and the transverse microchannel 501 are connected to form a relatively closed microchannel structure, providing space for the flow of the coolant. Driven by the magnetic field generated by the coil 400, the magnetic fluid in the coolant can drive the coolant to flow upward from the transverse microchannel 501 into the longitudinal microchannel 502. After the coil 400 is powered off, the coolant can fall back from the longitudinal microchannel 502 to the transverse microchannel 501 under the action of gravity and the flow field, achieving sufficient heat exchange between the first chip A and its surrounding area and the coolant, thereby achieving effective heat dissipation of the through-silicon-via adapter plate structure.

[0145] S216 , as shown in FIG14 , thinning the side of the second substrate 200 away from the first substrate 100 so that the second conductive member 3012 , the fourth conductive member 3022 , the liquid inlet 503 , and the liquid outlet 504 protrude from the surface of the second substrate 200 away from the first substrate 100 .

[0146] The lower surface of the second substrate 200 is thinned so that the lower end surfaces of the second conductive member 3012 and the fourth conductive member 3022 are exposed from the lower surface of the second substrate 200 to facilitate electrical conduction.

[0147] S217 , forming a second redistribution layer 702 on the surface of the second substrate 200 away from the first substrate 100 , wherein the second redistribution layer 702 is electrically connected to the second conductive member 3012 and the fourth conductive member 3022 .

[0148] S218 , forming a second connection point 902 on a side of the second redistribution layer 702 away from the second substrate 200 .

[0149] As shown in Figure 15, a second redistribution layer 702 and a second connection point 902 are sequentially prepared on the lower surface of the second substrate 200. Similarly, the second redistribution layer 702 is conductively connected to the lower ends of the second conductive member 3012 and the fourth conductive member 3022. The second connection point 902 can be a solder joint or other conductive connection point. The second connection point 902 is arranged on the lower surface of the second redistribution layer 702 to facilitate conduction to the outside and to facilitate connection to other external structures.

[0150] The further functional description of each of the above structures is the same as that of the above corresponding embodiments and will not be repeated here.

[0151] While the above description does not provide detailed technical details regarding patterning and etching of each layer, those skilled in the art will appreciate that various technical means can be employed to form layers, regions, and the like in desired shapes. Furthermore, those skilled in the art may devise methods that differ from those described above to form the same structure. Furthermore, while each embodiment has been described separately, this does not mean that the measures in each embodiment cannot be advantageously combined.

[0152] In the description of this specification, the description with reference to the terms "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are mutually inconsistent.

[0153] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0154] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0155] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0156] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, and simple improvements made to the essential content of the present application shall be included in the scope of protection of the present application.

Claims

1. A through silicon via adapter plate structure, characterized in that: include: A first substrate (100) comprises a first surface (101) and a second surface (102) arranged opposite to each other, a first groove (103) being formed on the first surface (101) of the first substrate (100), and a first chip (A) being arranged in the first groove (103); A second substrate (200) is disposed on the second surface (102) of the first substrate (100); A conductive connection structure (300), comprising a first conductive connection body (301) vertically penetrating the first substrate (100) and the second substrate (200), wherein the first conductive connection body (301) is arranged below the first groove (103); the first conductive connection body (301) comprises a first conductive member (3011) and a second conductive member (3012) arranged correspondingly, wherein the first conductive member (3011) is located in the first substrate (100), and the second conductive member (3012) is located in the second substrate (200); A coil (400), the coil (400) being arranged on the first surface (101) of the first substrate (100) and enclosing an edge of the first surface (101), the coil (400) being suitable for generating a magnetic field after being energized; A microfluidic structure is formed in the first substrate (100) and the second substrate (200) and is located below the area enclosed by the coil (400); the microfluidic structure is suitable for passing a cooling liquid to remove heat in the first substrate (100) and the second substrate (200); the cooling liquid includes a magnetic fluid; the microfluidic structure includes a transverse microfluidic channel (501) and a plurality of longitudinal microfluidic channels (502); the transverse microfluidic channel (501) is formed on a surface of the second substrate (200) close to the first substrate (100); and the transverse microfluidic channel (501) has a liquid inlet (503) and a liquid outlet (504); the liquid inlet (503) is used for the cooling liquid to flow in, and the liquid outlet (504) is used for the cooling liquid to flow out; the longitudinal microfluidic channel (502) is formed in the first substrate (100) and is connected to the transverse microfluidic channel (501).

2. The through silicon via adapter plate structure according to claim 1, characterized in that: The transverse microchannel (501) is formed into an S-shape or a zigzag shape; the longitudinal microchannel (502) is formed into a straight line shape, and a plurality of the longitudinal microchannels (502) are arranged at intervals in an array.

3. The through silicon via adapter plate structure according to claim 2, characterized in that: The magnetic fluid includes silicate ferrite magnetic fluid, graphene magnetic fluid and barium ferrite magnetic fluid.

4. The through silicon via adapter plate structure according to any one of claims 1 to 3, characterized in that: A heat-conducting layer (600) is also arranged in the first groove (103), and the heat-conducting layer (600) is arranged on the bottom surface and the side wall surface of the first groove (103).

5. The through silicon via adapter plate structure according to claim 4, characterized in that: The conductive connection structure (300) further comprises: a plurality of second conductive connectors (302) vertically penetrating the first substrate (100) and the second substrate (200), wherein the second conductive connectors (302) are located in the first substrate (100) where the first groove (103) is not formed; The second conductive connector (302) comprises a third conductive member (3021) and a fourth conductive member (3022) which are arranged correspondingly, wherein the third conductive member (3021) is located in the first substrate (100), and the fourth conductive member (3022) is located in the second substrate (200).

6. The through silicon via adapter plate structure according to claim 5, characterized in that: Also includes: A first redistribution layer (701) is disposed on the first surface (101) of the first substrate (100), and the coil (400) is disposed on the first redistribution layer (701); A second redistribution layer (702) is arranged on a surface of the second substrate (200) on a side away from the first substrate (100); the first conductive connector (301) connects the first chip (A) and the second redistribution layer (702); and the second conductive connector (302) connects the first redistribution layer (701) and the second redistribution layer (702).

7. The through silicon via adapter plate structure according to claim 6, characterized in that: Also includes: The insulating layer (800) is arranged on a side of the first redistribution layer (701) away from the first substrate (100) and surrounds the first redistribution layer (701). A second groove (801) is formed on a surface of the insulating layer (800) away from the first redistribution layer (701). A second chip (B) is arranged in the second groove (801). The second chip (B) is electrically connected to the first redistribution layer (701). Connectivity; The coil (400) is installed in the insulating layer (800), and the coil (400) is suitable for being connected to the first redistribution layer (701) or to an external power source.

8. The through silicon via adapter plate structure according to claim 7, characterized in that: Also includes: A first connection point (901), arranged on a side of the first redistribution layer (701) away from the first substrate (100), and suitable for connecting to the second chip (B); The second connection point (902) is arranged on a side of the second redistribution layer (702) away from the second substrate (200).

9. The through silicon via adapter plate structure according to claim 8, characterized in that: The conductive connection structure (300) is configured as a copper column.

10. A method for preparing a through silicon via adapter plate structure, used for preparing the through silicon via adapter plate structure according to any one of claims 1 to 9, characterized in that: The preparation method comprises the following steps: Providing a first substrate (100), wherein the first substrate (100) comprises a first surface (101) and a second surface (102) which are arranged opposite to each other; A first groove (103) is formed on the first surface (101) of the first substrate (100), wherein the first groove (103) is suitable for arranging a first chip (A); A first conductive member (3011) is formed vertically and penetrates below the first groove (103) of the first substrate (100); A coil (400) is wound around the edge of the first surface (101) of the first substrate (100); forming a plurality of longitudinal microchannels (502) on the second surface (102) of the first substrate (100); A second substrate (200) is provided, and a transverse microchannel (501), a liquid inlet (503), a liquid outlet (504), and a second conductive member (3012) are formed on the second substrate (200); the transverse microchannel (501) is suitable for passing a cooling liquid, the liquid inlet (503) and the liquid outlet (504) are respectively connected to two ends of the transverse microchannel (501), and the second conductive member (3012) is arranged at a distance from the transverse microchannel (501); the cooling liquid is suitable for mixing with a magnetic fluid and then flows into the transverse microchannel (501) from the liquid inlet (503), and then flows out from the liquid outlet (504) after passing through the longitudinal microchannel (502); The second substrate (200) is bonded to the first substrate (100) so that the second conductive member (3012) is connected to the first conductive member (3011) in correspondence to form a first conductive connection body (301).

11. The method for preparing a through silicon via adapter plate structure according to claim 10, characterized in that: Before forming a vertically penetrating first conductive member (3011) below the first groove (103) of the first substrate (100), the method further comprises: forming a heat-conducting layer (600) on the bottom surface and side wall surface of the first groove (103), so that the heat-conducting layer (600) is filled between the first chip (A) and the first groove (103); Disposing a temporary carrier (C) on the first surface (101) of the first substrate (100) to thin the second surface (102) of the first substrate (100); After forming a vertically penetrating first conductive member (3011) below the first groove (103) of the first substrate (100), the method further comprises: forming a third conductive member (3021) in the first substrate (100) where the first groove (103) is not formed; The temporary carrier plate (C) is removed.

12. The method for preparing a through silicon via adapter plate structure according to claim 11, characterized in that: Before the coil (400) is wound around the outer edge of the first surface (101) of the first substrate (100), the method further comprises: forming a first redistribution layer (701) on the first surface (101) of the first substrate (100); A first connection point (901) is formed on a surface of the first redistribution layer (701) away from the first substrate (100), and the first redistribution layer (701) is suitable for conductively connecting to the second chip (B) through the first connection point (901).

13. The method for preparing a through silicon via adapter plate structure according to claim 12, characterized in that: After the coil (400) is wound around the outer edge of the first surface (101) of the first substrate (100), the method further comprises: An insulating layer (800) is provided on the first redistribution layer (701) and surrounds the first redistribution layer (701) and the coil (400), A second groove (801) suitable for mounting a second chip (B) is formed on the insulating layer (800); The insulating layer (800) is thinned so that a surface of the second chip (B) away from the first substrate (100) protrudes beyond a surface of the insulating layer (800) away from the first substrate (100).

14. The method for preparing a through silicon via adapter plate structure according to claim 13, characterized in that: The step of forming a transverse microchannel (501), a coolant inlet (503) and a coolant outlet (504), and a second conductive member (3012) on a side surface of the second substrate (200) further includes: A fourth conductive member (3022) is formed on a surface of the second substrate (200) close to the first substrate (100), so that the fourth conductive member (3022) is connected correspondingly to the third conductive member (3021) to form a second conductive connection body (302).

15. The method for preparing a through silicon via adapter plate structure according to claim 14, characterized in that: After mounting the second substrate (200) on the second surface (102) of the first substrate (100), the method further comprises: Thinning the side of the second substrate (200) away from the first substrate (100), so that the second conductive member (3012), the fourth conductive member (3022), the liquid inlet (503) and the liquid outlet (504) protrude from the surface of the second substrate (200) away from the first substrate (100); forming a second redistribution layer (702) on a surface of the second substrate (200) away from the first substrate (100), wherein the second redistribution layer (702) is electrically connected to the second conductive member (3012) and the fourth conductive member (3022); A second connection point (902) is formed on a side of the second redistribution layer (702) away from the second substrate (200).

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