Method for manufacturing joined body

Abstract

The present invention provides a method for manufacturing a highly reliable joined body. Disclosed is a method for manufacturing the joined body, the method having: a transfer step for transferring an anisotropic conductive member, which is provided on a support base material, to a support body from the support base material; and a joining step for joining the anisotropic conductive member, which is transferred to the support body, to a member to be joined having an electrode. With respect to the support body, a portion with which the anisotropic conductive member comes into contact in the transfer step is less flexible than the support base material. The anisotropic conductive member has an insulating base material and a plurality of conduction paths which comprises a protruding part, the protruding part provided to penetrate in a thickness direction of the insulating base material and protrudes from at least one surface of the insulating base material.

Description

Manufacturing method of the bonded body

[0001] The present invention relates to a method for manufacturing a joined body having an anisotropically conductive member, and particularly to a method for manufacturing a joined body that joins an anisotropically conductive member that has conductivity in the thickness direction of an insulating base material to a joined member that has an electrode.

[0002] Currently, various joining methods are used to electrically connect electronic components such as semiconductor elements to each other and to connect electronic components to circuit boards. Various forms of connection have been proposed for connecting semiconductor elements to each other or between a semiconductor element and a substrate, such as wafer-on-wafer, chip-on-wafer, or chip-on-chip. An anisotropically conductive member having conductivity in the thickness direction of the insulating base material is used as an electronic connecting member for joining the above-mentioned electronic components to each other.

[0003] Patent Document 1 describes a method for manufacturing a multilayer wiring board, which includes an anisotropic conductive bonding member and a wiring board having a plurality of electrodes, in which the anisotropic conductive bonding member has an insulating base material made of an inorganic material and a plurality of conductive paths made of a conductive material that penetrate the insulating base material in the thickness direction and are insulated from each other, the plurality of conductive paths having protruding portions that protrude from the surface of the insulating base material, and the height of the plurality of electrodes on the wiring board is 10 μm or less, and the method for manufacturing a multilayer wiring board includes, in order, a temporary bonding process in which the anisotropic conductive bonding member and the wiring board are bonded using a non-conductive thermosetting resin, and a main bonding process in which the conductive paths of the anisotropic conductive bonding member and the electrodes of the wiring board are electrically bonded by heating at a temperature below the curing temperature of the thermosetting resin.

[0004] Japanese Patent Application Laid-Open No. 2008-037509

[0005] When an anisotropically conductive member is used as an electronic connecting member for bonding the above-mentioned electronic components, it is preferable that there is nothing on the bonding surface between the anisotropically conductive member and the electronic components to be connected during bonding, from the viewpoint of quality such as conductivity after bonding. However, in Patent Document 1, the anisotropically conductive bonding member and the wiring board are bonded using a non-conductive thermosetting resin in the temporary bonding process. Therefore, Patent Document 1 may cause bonding interference due to conductivity, etc. caused by the thermosetting resin at the bonding surface. An object of the present invention is to provide a method for manufacturing a bonded body with high bonding reliability.

[0006] In order to achieve the above-mentioned object, invention [1] is a method for manufacturing a joined body, which includes a transfer step of transferring an anisotropically conductive member provided on a supporting substrate from the supporting substrate to a supporting body, and a joining step of joining the anisotropically conductive member transferred to the supporting body to a member to be joined that has an electrode, wherein the supporting body has a portion that is less flexible than the supporting substrate and that comes into contact with the anisotropically conductive member in the transfer step, and the anisotropically conductive member has an insulating substrate and a plurality of conductive paths that penetrate the insulating substrate in the thickness direction and have protrusions that protrude from at least one surface of the insulating substrate.

[0007] Invention [2] is a method for producing a joined body according to Invention [1], which includes a temporary joining step between the transfer step and the joining step, in which the anisotropically conductive member is temporarily joined to a joined member having an electrode. Invention [3] is a method for producing a joined body according to Invention [1] or [2], which includes a step of filling a filler into the joint between the anisotropically conductive member and the joined member after the joining step. Invention [4] is a method for producing a joined body according to any one of Inventions [1] to [3], in which the filler has a viscosity of 50 mPa s or less.

[0008] Invention [5] is the method for producing a bonded body according to Invention [2], in which the transfer step is a step of transferring a plurality of anisotropically conductive members from a supporting substrate to a support, and the temporary bonding step is a step of temporarily bonding the plurality of anisotropically conductive members transferred to the support to one bonded member having an electrode. Invention [6] is the method for producing a bonded body according to Invention [2], in which the transfer step is a step of transferring a plurality of anisotropically conductive members from a supporting substrate to a support, and the temporary bonding step is a step of temporarily bonding at least one anisotropically conductive member among the plurality of anisotropically conductive members transferred to the support to a bonded member having an electrode. Invention [7] is the method for producing a bonded body according to any one of Inventions [1] to [6], in which the supporting substrate is a dicing tape or a tape having weak adhesive properties to the anisotropically conductive members. Invention [8] is the method for producing a bonded body according to any one of Inventions [1] to [7], in which the support is a substrate on which an adhesive layer is laminated, and the substrate is a quartz substrate or a glass substrate having ultraviolet light transparency. Invention [9] is a method for producing a bonded body according to any one of Inventions [2] to [6], in which the support is a substrate on which an adhesive layer whose adhesiveness is reduced by light is laminated, and the method includes, after the temporary bonding step, an exposure step of irradiating the adhesive layer with light to reduce the adhesive strength of the adhesive layer.

[0009] According to the present invention, a method for manufacturing a bonded body with high bonding reliability can be provided.

[0010] FIG. 1 is a schematic diagram showing an example of a bonded body manufactured by a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 4 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 5 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 6 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 7 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 8 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 9 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 10 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 11 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 12 is a schematic diagram showing one step of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 1 is a schematic diagram showing a first modified example of the second example of the method for manufacturing a bonded body according to an embodiment of the present invention; FIG. 2 is a schematic diagram showing one step of the second modified example of the second example of the method for manufacturing a bonded body according to an embodiment of the present invention; FIG. 3 is a schematic cross-sectional view showing one example of an anisotropically conductive member used in the method for manufacturing a bonded body according to an embodiment of the present invention; FIG. 4 is a schematic plan view showing one example of an anisotropically conductive member used in the method for manufacturing a bonded body according to an embodiment of the present invention.

[0011] The method for manufacturing a bonded body of the present invention will be described in detail below based on the preferred embodiment shown in the accompanying drawings. Note that the drawings described below are merely illustrative for explaining the present invention, and the present invention is not limited to the drawings shown below. Note that in the following, the term "to" indicating a range of values ​​includes the values ​​written on both sides. For example, when ε is a value ε α ~Number ε β That is, the range of ε is the number ε α and the number εβ The range includes ε α ≦ε≦ε β Unless otherwise specified, the term "parallel" includes a generally accepted error range in the relevant technical field. Furthermore, unless otherwise specified, the terms "temperature," "pressure," and "time" also include a generally accepted error range in the relevant technical field.

[0012] [Example of Bonded Body] FIG. 1 is a schematic diagram showing an example of a bonded body manufactured by a bonded body manufacturing method according to an embodiment of the present invention. In the bonded body 10 shown in FIG. 1 , semiconductor elements are used as examples of bonded members having electrodes, but the bonded members having electrodes are not particularly limited to semiconductor elements. The bonded body 10 shown in FIG. 1 includes a first semiconductor element 12, a second semiconductor element 14, and an anisotropically conductive member 16. The first semiconductor element 12 includes an electrode 13, and the electrode 13 is provided on a surface 12a. The second semiconductor element 14 includes an electrode 15, and the electrode 15 is provided on a surface 14a. The anisotropically conductive member 16 includes an insulating substrate 50 and a plurality of conductive paths 52 each having protrusions 52a and 52b that penetrate the insulating substrate 50 in the thickness direction. The conductive paths 52 are electrically conductive. The anisotropically conductive member 16 will be described in detail later.

[0013] The bonded body 10 includes a first semiconductor element 12, an anisotropically conductive member 16, and a second semiconductor element 14 stacked in this order and physically and electrically bonded to each other. In the bonded body 10, the electrodes 13 of the first semiconductor element 12 are physically and electrically bonded to the conductive paths 52 of the anisotropically conductive member 16. The electrodes 15 of the second semiconductor element 14 are physically and electrically bonded to the conductive paths 52 of the anisotropically conductive member 16. An underfill layer 18 is provided between the first semiconductor element 12 and the anisotropically conductive member 16. The underfill layer 18 firmly connects the first semiconductor element 12 and the anisotropically conductive member 16 and also suppresses oxidation of the electrodes 13 of the first semiconductor element 12 and the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16. The underfill layer 18 is also provided between the second semiconductor element 14 and the anisotropically conductive member 16. The underfill layer 18 firmly connects the second semiconductor element 14 and the anisotropically conductive member 16, and also prevents oxidation of the electrodes 15 of the second semiconductor element 14 and the protruding portions 52a of the conductive paths 52 of the anisotropically conductive member 16.

[0014] The first semiconductor element 12 and the second semiconductor element 14 are electrically connected via the anisotropically conductive member 16, and the bonded body 10 is conductive in the stacking direction Ds. This allows electrical signals to be exchanged between the first semiconductor element 12 and the second semiconductor element 14. The stacking direction Ds is the direction in which the first semiconductor element 12, the anisotropically conductive member 16, and the second semiconductor element 14 are stacked. It is preferable that the thickness direction Dt of the insulating base material 50 of the anisotropically conductive member 16 and the stacking direction Ds are approximately parallel to each other. Here, being physically and electrically bonded means that the anisotropically conductive member 16 and the first semiconductor element 12 and the second semiconductor element 14 do not separate even when the bonded body 10 is transported for handling, and there is electrical continuity between the anisotropically conductive member 16 and the first semiconductor element 12 and the second semiconductor element 14, so that electrical signals can be input to the first semiconductor element 12 and the second semiconductor element 14, and electrical signals can be output from the first semiconductor element 12 and the second semiconductor element 14 to the outside.

[0015] The electrodes 13 of the first semiconductor element 12 and the electrodes 15 of the second semiconductor element 14 are electrically conductive and may be made of, for example, tungsten, cobalt, copper, aluminum, silicide, or a combination thereof. Materials commonly used for terminals or electrode pads in the semiconductor device field may also be used for the electrodes 13 of the first semiconductor element 12 and the electrodes 15 of the second semiconductor element 14. The electrodes 13 of the first semiconductor element 12 and the electrodes 15 of the second semiconductor element 14 are preferably made of a metal or alloy that is more easily deformed during bonding than semiconductors, oxides, and nitrides, and are more preferably made of aluminum, copper, or an alloy containing aluminum or copper. The configuration of the bonded body 10 shown in FIG. 1 is not particularly limited, and may include three semiconductor elements stacked and electrically connected via an anisotropically conductive member 16, or may include four or more semiconductor elements stacked and electrically connected via an anisotropically conductive member 16.

[0016] 2 to 10 are schematic diagrams showing the order of steps of a first example of a method for manufacturing a bonded body according to an embodiment of the present invention. In FIGS. 2 to 10, the same components as those in the bonded body 10 shown in FIG. 1 are denoted by the same reference numerals, and detailed descriptions thereof will be omitted. The first example of a method for manufacturing a bonded body is a method for manufacturing the bonded body 10 shown in FIG. 1 described above. The target of the method for manufacturing a bonded body is not particularly limited to the bonded body 10 shown in FIG. 1 described above, and the number of semiconductor elements is not limited to two.

[0017] As shown in FIG. 2 , a plurality of anisotropically conductive members 16 are provided on the surface 20a of a support substrate 20. The support substrate 20 is, for example, a dicing tape. Alternatively, a tape having weak adhesive properties to the anisotropically conductive members 16 may be used as the support substrate 20. Weak adhesive properties mean that, once the anisotropically conductive members 16 are attached to the support substrate 20, they can be peeled off without damaging the support substrate 20 or leaving any part of the support substrate 20 on the anisotropically conductive members 16. In the state shown in FIG. 2 , the anisotropically conductive members 16 are removed from the support substrate 20 by, for example, suction using a head 22 of a flip-chip bonding device (not shown). Next, the anisotropically conductive members 16 provided on the support substrate 20 are transferred from the support substrate 20 to a support 24 as shown in FIG. 3 (transferring process). In the transferring process, the plurality of anisotropically conductive members 16 are each transferred to a predetermined position on the support 24. The plurality of anisotropically conductive members 16 shown in FIG. 2 are, for example, formed by cutting an anisotropically conductive member on the support substrate 20 and dividing it into individual pieces.

[0018] The support 24 has a portion that contacts the anisotropically conductive member 16 during the transfer process that is less flexible than the support substrate 20. That is, the rigidity of the portion of the support 24 that contacts the anisotropically conductive member 16 is greater than the rigidity of the support substrate 20. Here, rigidity can be evaluated by the magnitude of Young's modulus. The larger the Young's modulus, the higher the rigidity. The Young's modulus of the support 24 is greater than that of the support substrate 20, resulting in higher rigidity and lower flexibility. The support 24 is, for example, a substrate 25 to which an adhesive layer 26 is laminated. The substrate 25 is, for example, a quartz substrate or a glass substrate that is UV-transparent. The adhesive layer 26 temporarily fixes the anisotropically conductive member 16. Being UV-transparent means that the transmittance at a wavelength of 254 nm is 20% or more. The UV transmittance is measured using a spectrophotometer.

[0019] The anisotropically conductive member 16 is transferred onto the adhesive layer 26, and a substrate 25, such as a quartz substrate or an ultraviolet-transparent glass substrate, is provided below the adhesive layer 26, suppressing deformation of the adhesive layer 26. For this reason, the portion of the support 24 with which the anisotropically conductive member 16 comes into contact is more rigid and less flexible than the support base material 20. Because the portion of the support 24 with which the anisotropically conductive member 16 comes into contact is less flexible than the support base material 20, when the support 24 is temporarily bonded to the anisotropically conductive member 16 transferred onto the support 24, deformation due to the pressure acting during temporary bonding is suppressed, ensuring reliable temporary bonding.

[0020] The adhesive layer 26 has adhesive properties that decrease upon exposure, i.e., light irradiation. For example, after the adhesive strength of the adhesive layer 26 is decreased by exposure, the anisotropically conductive member 16 can be peeled off from the adhesive layer 26 and transported. Therefore, the support 24 preferably has a substrate 25 that is light-transmitting so that the adhesive layer 26 can be irradiated with light. The light irradiated onto the adhesive layer 26 to decrease the adhesive strength depends on the composition of the adhesive layer 26. Therefore, the support 24 is appropriately provided with a substrate 25 that transmits light of a wavelength that decreases the adhesive strength of the adhesive layer 26. Exposure includes laser irradiation using laser light and ultraviolet irradiation using ultraviolet light. Examples of the adhesive layer 26 that can be used include Selfa manufactured by Sekisui Chemical Co., Ltd. and Light-To-Heat-Conversion Release Coating manufactured by 3M. The substrate 25 is not limited to a quartz substrate or a UV-transmitting glass substrate, as long as the portion in contact with the anisotropically conductive member 16 is less flexible than the support base 20, as described above. From the viewpoint of handling after temporary bonding, it is more preferable that the substrate 25 be transparent to light that is irradiated onto the adhesive layer 26 in order to reduce the adhesive strength.

[0021] As shown in FIG. 4 , for example, a wafer 30 having multiple electrodes 31 on its surface 30 a is prepared in advance. The wafer 30 having multiple electrodes 31 on its surface 30 a is a single bonded member. The wafer 30 has, for example, two electrodes 31 paired together, and one anisotropically conductive member 16 is temporarily and permanently bonded to the two electrodes 31. After the anisotropically conductive member 16 has been transferred to the support 24, the electrodes 31 of the wafer 30 are aligned with the anisotropically conductive member 16 using a known alignment method, for example, a wafer bonder (not shown). Then, as shown in FIG. 5 , the wafer 30 is placed on the anisotropically conductive member 16. In this state, the multiple anisotropically conductive members 16 transferred to the support 24 are temporarily bonded to the single wafer 30 using the wafer bonder (not shown) under temporary bonding conditions of preset temperature, pressure, time, and an inert gas atmosphere (temporary bonding process). The inert gas is, for example, nitrogen gas or argon gas. In the following description, unless otherwise specified, the inert gas is, for example, nitrogen gas or argon gas. The temporary bonding step physically bonds and temporarily bonds the electrodes 31 of the wafer 30 to the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16. The wafer 30 temporarily bonded to the anisotropically conductive member 16 is called a stack 32 (see FIG. 6).

[0022] 6, an exposure process is carried out in which light Lv is irradiated onto the adhesive layer 26 from the surface 25b opposite the adhesive layer 26 of the substrate 25 to reduce the adhesive strength of the adhesive layer 26. In a state in which the adhesive strength of the adhesive layer 26 is reduced by the exposure process and the adhesive strength is weakened, the temporarily bonded wafer 30 and anisotropically conductive member 16 are peeled off from the support 24 using a wafer bonder (not shown) and transported to perform the next process.

[0023] Next, as shown in FIG. 7 , the stack 32 is placed, for example, with the wafer 30 facing downward. Here, a plurality of second semiconductor elements 14 are prepared in advance. The second semiconductor elements 14 are members to be bonded. For example, the plurality of second semiconductor elements 14 are placed on a chip tray (not shown). The anisotropically conductive member 16 on which the second semiconductor elements 14 are placed is also determined in advance. Next, for example, the head 22 of a flip-chip bonding device is used to transport the second semiconductor elements 14 on the chip tray, and the second semiconductor elements 14 are aligned with the anisotropically conductive member 16 to be placed thereon using a known alignment method, and then the second semiconductor elements 14 are placed on the anisotropically conductive member 16.

[0024] Next, using a flip-chip bonding device (not shown), one second semiconductor element 14 and one anisotropically conductive member 16 are temporarily bonded together under preset temporary bonding conditions of temperature, pressure, time, and an inert gas atmosphere (temporary bonding process). In the temporary bonding process, the second semiconductor elements 14 are temporarily bonded to all of the anisotropically conductive members 16, as shown in Fig. 8. In the temporary bonding process, the electrodes 15 of the second semiconductor element 14 and the protruding portions 52a of the conductive paths 52 of the anisotropically conductive member 16 are physically coupled and temporarily bonded.

[0025] After the temporary bonding step, a wafer bonding apparatus (not shown) is used to perform a final bonding step under predetermined conditions of temperature, pressure, time, and an inert gas atmosphere. This final bonding step physically and electrically bonds the electrodes 31 of the wafer 30 to the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16, and also physically and electrically bonds the protruding portions 52a of the conductive paths 52 of the anisotropically conductive member 16 to the electrodes 15 of the second semiconductor element 14. This ensures electrical continuity between the electrodes 31 of the wafer 30 and the second semiconductor element 14, allowing electrical signals to be exchanged between the wafer 30 and the second semiconductor element 14.

[0026] After this bonding step, a step is performed in which, for example, a filler (not shown) is dropped into the bonded portion 35 between the anisotropically conductive member 16 and the wafer 30 and the filler is filled using capillary action. As a result, an underfill layer 18 is formed as a sealing layer between the anisotropically conductive member 16 and the wafer 30 as shown in FIG. 9 . Furthermore, for example, a filler is dropped into the bonded portion 35 between the anisotropically conductive member 16 and the second semiconductor element 14 and filled using capillary action. As a result, an underfill layer 18 is formed between the anisotropically conductive member 16 and the second semiconductor element 14 as shown in FIG. 9 . The composition of the filler is not particularly limited as long as it can form an underfill layer. From the perspective of more reliably forming an underfill layer, the viscosity of the filler is preferably 50 mPa·s or less. The lower limit of the viscosity of the filler is, for example, 1 mPa·s. The viscosity of the filler can be measured in accordance with JIS (Japanese Industrial Standards) Z 8803, Viscosity Measurement Method for Liquids.

[0027] Next, the wafer 30 shown in FIG. 10 is cut along the cutting lines Lc to be individual pieces. This results in the bonded body 10 shown in FIG. 1 described above. The individual pieces of the wafer 30 cut along the cutting lines Lc become the first semiconductor elements 12. The electrodes 31 of the wafer 30 correspond to the electrodes 13 of the first semiconductor elements 12. For example, dicing or laser scribing is used to cut the wafer 30 described above. For dicing, a dicing device such as a dicing saw can be used.

[0028] In the above-described method for manufacturing a bonded body, the anisotropically conductive member 16 and the bonded members, i.e., the wafer 30 and the second semiconductor element 14, are temporarily bonded together and then permanently bonded together without using a thermosetting resin or the like, resulting in a direct bond. By performing the temporary bonding and the permanent bonding without any intervening material, such as a thermosetting resin, between the anisotropically conductive member 16 and the bonded members, the reliability of the bond can be increased. This results in a bonded body 10 (see FIG. 1 ) with high bonding reliability. Here, direct bonding refers to bonding the anisotropically conductive member and the bonded members together without any intervening material, such as a resin layer or adhesive, between them.

[0029] As shown in Fig. 7, one second semiconductor element 14 and one anisotropically conductive member 16 are temporarily bonded together, but this is not limiting. For example, multiple anisotropically conductive members 16 may be temporarily bonded to one second semiconductor element 14. In this case, as shown in Fig. 7, two anisotropically conductive members 16 may be temporarily bonded to one second semiconductor element 36. The second semiconductor element 36 has electrodes 15 on its surface 36a corresponding to each anisotropically conductive member 16. After the temporary bonding, the above-mentioned main bonding process and the formation of an underfill layer are performed to form a bonded body having two anisotropically conductive members 16.

[0030] [Second Example of Method for Manufacturing a Bonded Body] FIGS. 11 to 15 are schematic diagrams showing the order of steps in a second example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIG. 16 is a schematic diagram showing a first modified example of the second example of a method for manufacturing a bonded body according to an embodiment of the present invention. FIGS. 17 and 18 are schematic diagrams showing a step of a second modified example of the second example of a method for manufacturing a bonded body according to an embodiment of the present invention. In FIGS. 11 to 18, components identical to those in the bonded body 10 shown in FIG. 1 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. The second example of a method for manufacturing a bonded body is a method for manufacturing the bonded body 10 shown in FIG. 1 described above. The subject of the method for manufacturing a bonded body is not particularly limited to the bonded body 10 shown in FIG. 1 described above. In the second example of a method for manufacturing a bonded body, detailed descriptions of the same steps as those in the first example of a method for manufacturing a bonded body described above will be omitted.

[0031] In the second example of the method for manufacturing a bonded body, similarly to the first example of the method for manufacturing a bonded body, in the state shown in FIG. 2 , for example, the anisotropically conductive member 16 is suctioned and peeled off from the support substrate 20 by, for example, a head 22 (see FIG. 2 ) of a flip-chip bonding apparatus (not shown). Next, as shown in FIG. 11 , the anisotropically conductive member 16 is transferred from the support substrate 20 (see FIG. 2 ) to a support 24 (transferring process). In the transferring process, the anisotropically conductive member 16 is transferred to a predetermined position on the support 24. A plurality of second semiconductor elements 14 are prepared in advance, and the plurality of second semiconductor elements 14 are placed on, for example, a chip tray (not shown). Note that the anisotropically conductive member 16 on which the second semiconductor elements 14 are placed is predetermined.

[0032] After the transfer process, as shown in FIG. 12 , for example, the head 22 of a flip-chip bonding device is used to transport the second semiconductor element 14 in the chip tray. The second semiconductor element 14 is aligned with the anisotropically conductive member 16 to be placed thereon using a known alignment method, and then the second semiconductor element 14 is placed on the anisotropically conductive member 16. Next, a flip-chip bonding device (not shown) is used to temporarily bond one second semiconductor element 14 to one anisotropically conductive member 16 under predetermined temporary bonding conditions of temperature, pressure, time, and an inert gas atmosphere (temporary bonding process). In the temporary bonding process, the electrodes 15 of the second semiconductor element 14 and the protruding portions 52 a of the conductive paths 52 of the anisotropically conductive member 16 are physically bonded and temporarily bonded. In the temporary bonding process, the second semiconductor elements 14 are temporarily bonded to all the anisotropically conductive members 16, as shown in FIG. 13 . The second semiconductor elements 14 temporarily bonded to the anisotropically conductive members 16 are referred to as a stack 33. After the temporary bonding step, light Lv is then irradiated onto the adhesive layer 26 from the surface 25b opposite the adhesive layer 26 of the substrate 25 to weaken the adhesive strength of the adhesive layer 26. In this state, the head 22 of the flip-chip bonding device is used to peel off the stack 33 in which the second semiconductor element 14 is temporarily bonded to the anisotropically conductive member 16 from the support 24.

[0033] Here, as shown in FIG. 14 , for example, a wafer 30 having a plurality of electrodes 31 on its surface 30 a is prepared in advance. The wafer 30 is placed with its surface 30 a facing up. The wafer 30 has the same configuration as the wafer 30 shown in FIG. 4 , and therefore a detailed description thereof will be omitted. A laminate 33 to be temporarily bonded to the plurality of electrodes 31 of the wafer 30 is predetermined. The laminate 33 is transported using the head 22 of a flip-chip bonding device, and the anisotropically conductive member 16 of the laminate 33 is aligned with the electrodes 31 of the wafer 30 using a known alignment method. The laminate 33 is placed on the electrodes 31 of the wafer 30, and one wafer 30 and the anisotropically conductive member 16 are temporarily bonded to each other using a chip bonding device (not shown) under preset temporary bonding conditions of temperature, pressure, time, and an inert gas atmosphere (temporary bonding process). In the temporary bonding process, the anisotropically conductive member 16 is temporarily bonded to each electrode 31 of one wafer 30. The temporary bonding process physically bonds and temporarily bonds the electrodes 31 of the wafer 30 to the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16. The temporary bonding process is repeated until the laminate 33 is temporarily bonded to predetermined electrodes 31 of the wafer 30. As a result, the anisotropically conductive members 16 of the laminate 33 are temporarily bonded to all of the electrodes 31 of the wafer 30, as shown in FIG.

[0034] After the temporary bonding, the final bonding is performed under the predetermined bonding conditions of temperature, pressure, time, and an inert gas atmosphere as described above (final bonding process). The final bonding physically and electrically bonds the electrodes 31 of the wafer 30 to the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16, and also physically and electrically bonds the protruding portions 52a of the conductive paths 52 of the anisotropically conductive member 16 to the electrodes 15 of the second semiconductor element 14. This ensures electrical continuity between the electrodes 31 of the wafer 30 and the first semiconductor element 12, allowing electrical signals to be exchanged between the wafer 30 and the first semiconductor element 12.

[0035] After this bonding process, an underfill layer 18 is formed at the bonded portion 35 between the anisotropically conductive member 16 and the wafer 30 shown in FIG. 9 using the same method as described above. An underfill layer 18 is also formed at the bonded portion 35 between the anisotropically conductive member 16 and the second semiconductor element 14 shown in FIG. 9 using the same method as described above. Next, the wafer 30 shown in FIG. 10 is cut along the cutting line Lc to obtain the bonded body 10 shown in FIG. 1 described above. Note that the individual pieces of the wafer 30 cut along the cutting line Lc as described above become the first semiconductor elements 12. The electrodes 31 of the wafer 30 correspond to the electrodes 13 of the first semiconductor elements 12. In the second example of the method for manufacturing a bonded body, the anisotropically conductive member 16 of the laminate 33 is temporarily bonded to the electrodes 31 of the wafer 30, followed by the final bonding, but this is not limited thereto. For example, instead of the wafer 30, a first semiconductor element 12 shown in FIG. 16 is prepared, and the first semiconductor element 12 and the anisotropically conductive member 16 are temporarily bonded to form a plurality of laminates 34. The laminate 34 is subjected to this bonding process, whereby the first semiconductor element 12 and the protruding portions 52b of the conductive paths 52 of the anisotropically conductive member 16 are physically and electrically bonded, and the protruding portions 52a of the conductive paths 52 of the anisotropically conductive member 16 are physically and electrically bonded to the electrodes 15 of the second semiconductor element 14. After this bonding process, a bonded body can be formed by filling the bonding portions 35 with a filler to form an underfill layer as described above. In this case, the above-described underfill layer is formed for each laminate 34 after the bonding process, but the process of singulating the wafer 30 can be omitted.

[0036] Furthermore, the second example of the method for manufacturing a bonded body is not limited to temporarily bonding one second semiconductor element 14 to one anisotropically conductive member 16 as shown in FIG. 12 . In the temporary bonding process, one bonded member may be temporarily bonded to multiple anisotropically conductive members, as long as at least one anisotropically conductive member is temporarily bonded to a bonded member having an electrode. In this case, for example, as shown in FIG. 17 , one second semiconductor element 36 is temporarily bonded to two anisotropically conductive members 16 transferred to a support 24. Next, as described above, light Lv (see FIG. 13 ) is irradiated onto the adhesive layer 26 from the surface 25b opposite the adhesive layer 26 of the substrate 25 to weaken the adhesive strength of the adhesive layer 26, and the second semiconductor element 36 is then peeled off from the support 24. Next, the second semiconductor element 36 is aligned with the wafer 30 using a known alignment method. 18 , a second semiconductor element 36 is placed on the electrodes 31 of the wafer 30, and a flip-chip bonding device (not shown) is used to temporarily bond one wafer 30 to two anisotropically conductive members 16 under preset temporary bonding conditions of temperature, pressure, and time, and an inert gas atmosphere (temporary bonding process). Next, a main bonding process is performed to permanently bond one wafer 30, two anisotropically conductive members 16, and the second semiconductor element 36. After the main bonding process, a filler is filled as described above into the bonded portions (not shown) between the one wafer 30 and the two anisotropically conductive members 16, and the bonded portions (not shown) between the two anisotropically conductive members 16 and the second semiconductor element 36 to form underfill layers. The wafer 30 is then cut as described above to form a bonded body having two anisotropically conductive members 16.

[0037] In the above-described method for manufacturing a bonded body, similar to the first example of the method for manufacturing a bonded body, the anisotropically conductive member 16 and the bonded members, that is, the wafer 30 and the second semiconductor element 14, are temporarily bonded together without using a thermosetting resin or the like, and then the bonded members are permanently bonded to each other, so that no intervening material such as a thermosetting resin is present. By performing the temporary bonding and the permanent bonding without any intervening material such as a thermosetting resin between the anisotropically conductive member 16 and the bonded members, the reliability of the bond can be increased. This results in a bonded body 10 (see FIG. 1) with high bonding reliability.

[0038] In the first example of the method for manufacturing a bonded body and the second example of the method for manufacturing a bonded body, the first semiconductor elements 12 are formed by dividing the wafer 30 into individual pieces. However, this is not limited to this, and the second semiconductor elements 14 may also be formed by dividing the wafer 30 into individual pieces. In this case, the electrodes 31 of the wafer 30 become the electrodes 15 of the second semiconductor elements 14. Furthermore, the first semiconductor elements 12 are those transported by the head 22 of the flip-chip bonding apparatus (not shown). In the first example of the method for manufacturing a bonded body, the wafer 30 that will ultimately become the first semiconductor elements 12 is temporarily bonded to a plurality of anisotropically conductive members 16 collectively. Therefore, the first example of the method for manufacturing a bonded body can shorten the manufacturing time compared to the second example of the method for manufacturing a bonded body, in which a plurality of second semiconductor elements 14 are temporarily bonded one by one.

[0039] <Temporary Bonding Process> The temporary bonding process is a process performed between the transfer process and the actual bonding process. The temporary bonding in the temporary bonding process is a bond in which the anisotropically conductive member and the bonded member having electrodes are physically fixed, but electrical continuity is not ensured. After temporary bonding, the members are fixed to a degree that allows them to be transported using the head of the flip-chip bonding device, as described above. After temporary bonding, they are physically fixed and can be handled, such as transported, while maintaining their bonded state without separation. <Exposure Process> The exposure process is a process performed between the temporary bonding process and the actual bonding process. The exposure process irradiates the adhesive layer 26 with light Lv to reduce the adhesive strength of the adhesive layer 26 in order to peel the temporarily bonded wafer 30 and anisotropically conductive member 16 from the support 24, as described above. By reducing the adhesive strength of the adhesive layer 26 through the exposure process, the temporarily bonded wafer 30 and anisotropically conductive member 16 can be separated from the support 24. <Main Bonding Process> The main bonding process is a process of bonding the anisotropically conductive member transferred onto a support to a member to be bonded that has an electrode, and is performed after the temporary bonding process. The main bonding in the main bonding process refers to physically and electrically bonding the anisotropically conductive member and the member to be bonded that has the electrode. This main bonding physically fixes the anisotropically conductive member to the member to be bonded that has the electrode, and ensures electrical continuity between them.

[0040] (Anisotropically Conductive Member) The anisotropically conductive member will now be described. FIG. 19 is a schematic cross-sectional view showing an example of an anisotropically conductive member used in the manufacturing method of a bonded body according to an embodiment of the present invention. FIG. 20 is a schematic plan view showing an example of an anisotropically conductive member used in the manufacturing method of a bonded body according to an embodiment of the present invention. FIG. 20 is a plan view of FIG. 19 as seen from the surface side of the anodized film. The anisotropically conductive member 16 shown in FIG. 19 is conductive in the stacking direction Ds (see FIG. 1) of the bonded body described above. The anisotropically conductive member 16 includes an insulating substrate 50 having electrical insulation properties and a plurality of conductive paths 52 that penetrate the insulating substrate 50 in the thickness direction Dt and have protruding portions that protrude from at least one surface of the insulating substrate 50. In the bonded body 10 shown in FIG. 1, the anisotropically conductive member 16 is ideally disposed between the first semiconductor element 12 and the second semiconductor element 14, with the thickness direction Dt and the stacking direction Ds parallel to each other.

[0041] The plurality of conductive paths 52 are provided in the insulating substrate 50 in a state where they are electrically insulated from one another. In this case, for example, the insulating substrate 50 has a plurality of pores 51 penetrating in the thickness direction Dt. The conductive paths 52 are provided in the plurality of pores 51. The conductive paths 52 protrude from the front surface 50a of the insulating substrate 50. The conductive paths 52 also protrude from the back surface 50b of the insulating substrate 50. As described above, the conductive paths 52 have protruding portions protruding from one surface of the insulating substrate 50 in the thickness direction Dt. The insulating substrate 50 is formed, for example, of an anodized film. The front surface 50a of the insulating substrate 50 and the back surface 50b of the insulating substrate 50 are surfaces that face each other in the thickness direction Dt of the insulating substrate 50.

[0042] The anisotropically conductive member 16 has anisotropic conductivity and is conductive in the thickness direction Dt, but has sufficiently low conductivity in a direction parallel to the surface 50a of the insulating substrate 50. As shown in FIG. 20 , the anisotropically conductive member 16 has, for example, a rectangular outer shape. The outer shape and size of the anisotropically conductive member 16 are determined appropriately according to the outer shape and size of the bonding region of the semiconductor element. The anisotropically conductive member 16 is bonded without a resin layer or the like.

[0043] The structure of the anisotropically conductive member will be described in more detail below. The anisotropically conductive member has a structure similar to that of the structure described in, for example, WO 2022 / 163260 and can be manufactured in a manner similar to that of the structure described above. <Insulating Substrate> The insulating substrate 50 is made of a conductor and electrically insulates a plurality of conductive paths 52 from one another. The insulating substrate 50 has electrical insulation properties. The insulating substrate 50 also has a plurality of pores 51 in which the conductive paths 52 are formed. The composition of the insulating substrate 50 will be described later. The length of the insulating substrate 50 in the thickness direction Dt, i.e., the thickness ht of the insulating substrate 50, is preferably within the range of 1 to 1000 μm, more preferably within the range of 5 to 500 μm, and even more preferably within the range of 10 to 300 μm. When the thickness ht of the insulating substrate 50 is within this range, the insulating substrate 50 is easy to handle. From the viewpoint of ease of winding, the thickness ht of the insulating substrate 50 is preferably 30 μm or less, and more preferably 5 to 20 μm.

[0044] The thickness of the insulating substrate is a value calculated as an average value of 10 measurements taken at 10 points after cutting the insulating substrate in the thickness direction Dt using a focused ion beam (FIB) and taking surface photographs (magnification: 50,000 times) of the cross section using a scanning electron microscope (SEM).

[0045] <Average Diameter of Pores> The average diameter of the pores 51 is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, even more preferably 40 to 200 nm, and most preferably 50 to 100 nm. When the average diameter d of the pores 51 is 1 μm or less and within the above-mentioned range, conductive paths 52 having the above-mentioned average diameter can be obtained. The average diameter of the pores 51 is measured by photographing the surface of the insulating substrate 50 from directly above using a scanning electron microscope (SEM) at a magnification of 100 to 10,000 times. At least 20 pores with a circular periphery are extracted from the captured image, and their diameters are measured to determine the opening diameter. The average of these opening diameters is calculated as the average diameter of the pores. The magnification can be appropriately selected within the above-mentioned range so as to obtain an image in which 20 or more pores can be extracted. The opening diameter is measured by measuring the maximum distance between the ends of the pore portions. In other words, since the shape of the opening of the pore is not limited to a substantially circular shape, when the opening shape is non-circular, the maximum value of the distance between the ends of the pore portion is taken as the opening diameter. Therefore, even when a pore has a shape in which two or more pores are integrated, this is considered to be a single pore, and the maximum value of the distance between the ends of the pore portion is taken as the opening diameter.

[0046] <Conductive Path> As described above, the multiple conductive paths 52 are provided in the insulating substrate 50, e.g., an anodized film, while being electrically insulated from one another. The multiple conductive paths 52 are electrically conductive. The conductive paths are made of a conductive material. The conductive material is not particularly limited, and examples thereof include metals. Specific examples of metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), zinc (Zn), and cobalt (Co). From the viewpoint of electrical conductivity, copper, gold, aluminum, nickel, and cobalt are preferred, copper and gold are more preferred, and copper is most preferred. Metals have superior ductility and other properties compared to oxide conductors, making them more easily deformable, even when compressed during bonding. Therefore, the conductive paths are preferably made of metal. The height of the conductive paths 52 in the thickness direction Dt is preferably 10 to 300 μm, and more preferably 20 to 30 μm.

[0047] <<Shape of Conductive Paths>> The average diameter d of the conductive paths 52 is preferably 1 μm or less, more preferably 5 to 500 nm, even more preferably 20 to 400 nm, still more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The density of the conductive paths 52 is 20,000 pieces / mm 2 It is preferable that the density is 2 million / mm or more. 2 More preferably, it is 10 million particles / mm or more. 2 More preferably, it is 50 million particles / mm or more. 2 It is particularly preferable that the number of particles is 100 million / mm or more. 2 Furthermore, the center-to-center distance p between adjacent conductive paths 52 is preferably 20 nm to 500 nm, more preferably 40 nm to 200 nm, and even more preferably 50 nm to 140 nm.

[0048] The average diameter of the conductive paths is determined by photographing the surface of the insulating substrate from directly above at a magnification of 100 to 10,000 times using a scanning electron microscope. At least 20 conductive paths with a circular periphery are extracted from the image, and their diameters are measured to determine the opening diameter. The average of these opening diameters is then calculated as the average diameter of the conductive paths. The magnification can be appropriately selected within the above-mentioned range so as to obtain an image that can extract at least 20 conductive paths. Furthermore, when the opening shape is non-circular, the maximum distance between the ends of the conductive path portion is taken as the opening diameter. Therefore, for example, even when two or more conductive paths are integrated, this is considered as a single conductive path, and the maximum distance between the ends of the conductive path portion is taken as the opening diameter. The average diameter d of the conductive paths 52 is the same as the average diameter of the protrusions. The center-to-center distance p of adjacent conductive paths 52 is determined by further identifying the center positions (not shown) of the identified conductive paths in the image of the insulating substrate 50 obtained as described above. The distance between the centers of adjacent conductive paths was determined at 10 locations. This average value was set as the center-to-center distance p between adjacent conductive paths 52. The center position is the center position of the region in the captured image that corresponds to conductive path 52. Note that a known image analysis method is used to calculate the center position of the region in the captured image.

[0049] <<Protrusions>> The protrusions are part of the conductive paths and are columnar. The protrusions are preferably cylindrical because this increases the contact area with the objects to be joined. The average protrusion length ha of the protrusions 52a and the average length hb of the protrusions 52b are preferably 10 nm to 1000 nm, more preferably 50 nm to 500 nm. When the average protrusion length ha and the average length hb are 10 nm to 1000 nm, the bondability with the members to be joined is improved. The average protrusion length ha of the protrusions 52a and the average length hb of the protrusions 52b are calculated by obtaining cross-sectional images of the protrusions using a scanning electron microscope as described above, and measuring the heights of the protrusions at 10 points on each cross-sectional image.

[0050] Regarding the conductive paths 52, the distance between adjacent protrusions is preferably 20 nm to 200 nm, and more preferably 40 nm to 100 nm. When the distance between adjacent protrusions is within the above range, the distance between the conductive paths 52 can be maintained on the front surface 50a or the back surface 50b of the insulating substrate 50 of the conductive paths 52. This suppresses short circuits of the conductive paths 52 during temporary bonding and final bonding in the manufacturing method of the bonded body, further increasing the reliability of the bond. Note that while the anisotropically conductive member 16 shown in FIG. 19 has a configuration in which protrusions of the conductive paths are provided on both surfaces, as described above, it is sufficient that the protrusions are provided on at least one of the front surface 50a and the back surface 50b.

[0051] [Bonded Members] The bonded members are not particularly limited as long as they have an electrode. Examples of bonded members include electronic components such as semiconductor elements, semiconductor devices, printed wiring boards, and printed circuit boards. In semiconductor elements, the functions of the semiconductor elements are distinguished by the operation of the semiconductor elements. Examples of semiconductor functions include calculations such as a central processing unit (CPU) or a graphics processing unit (GPU), storage such as a memory, conversion such as a converter, filtering, and sensing. Furthermore, when these functions are integrated into a single chip or unit, the functions are identified in the integrated state. When the identified functions are different, the semiconductor elements are different.

[0052] The semiconductor element is not particularly limited as long as it has the above-described electrodes. More specifically, examples of the semiconductor element include logic large-scale integration (LSI), application-specific integrated circuits (ASIC), field programmable gate arrays (FPGA), and application-specific standard products (ASSP). Other examples include microprocessors such as CPUs and GPUs. Other examples include memories such as dynamic random access memory (DRAM), static random access memory (SRAM), hybrid memory cubes (HMC), magnetic random access memory (MRAM), phase-change memory (PCM), resistive random access memory (RRAM), ferroelectric random access memory (FeRAM), and flash memory. Other examples include light-emitting diodes (LEDs), power devices, analog integrated circuits (ICs), direct current (DC)-direct current (DC) converters, and insulated gate bipolar transistors (IGBTs).Examples of such devices include MEMS (Micro Electro Mechanical Systems) such as acceleration sensors, pressure sensors, vibrators, and gyro sensors, GPS (Global Positioning System), FM (Frequency Modulation), NFC (Nearfield communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network), discrete elements, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, passive devices, SAW (Surface Acoustic Wave) filters, RF (Radio Frequency) filters, RFIPD (Radio Frequency Integrated Passive Devices), and BB (Broadband). The semiconductor element may have a TSV (Through Silicon Via) or a TGV (Through-Glass Via).

[0053] The composition of the semiconductor constituting the semiconductor element is not particularly limited, and examples of the semiconductor composition include diamond, silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide, and silicon-on-insulator (SOI).

[0054] <Semiconductor Device> A semiconductor device is a device in which a plurality of semiconductor elements described above are stacked and electrically connected. A semiconductor device is a device in which a plurality of semiconductor elements are assembled to perform a specific function, but also includes devices that simply transmit electrical signals. A semiconductor device may be, for example, a logic device with a two-dimensional (2D), two-and-a-half-dimensional (2.5D), or three-dimensional (3D) architecture. Furthermore, a semiconductor device may be, for example, a DRAM stack in which a plurality of DRAMs are stacked, or a configuration in which a DRAM stack and a logic LSI are stacked.

[0055] The semiconductor device may also have a configuration including a printed wiring board, a heat sink, etc. The semiconductor device may have digital, analog, or mixed-signal peripheral circuits in addition to the semiconductor elements described above. More specifically, the semiconductor device may have a peripheral device layer including one or more of a page buffer, a row decoder, a column decoder, a sense amplifier, a driver, a charge pump, a transistor, a diode, a resistor, or a capacitor.

[0056] Furthermore, the semiconductor device may have an element region in addition to the semiconductor element described above. The element region is a region in which various element component circuits, etc., for functioning as electronic elements are formed. The element region may include, for example, a region in which a memory circuit such as a flash memory, a logic circuit such as a microprocessor and an FPGA (field-programmable gate array), etc., is formed, and a region in which a communication module such as a wireless tag and wiring are formed. In addition to the above, a MEMS may be formed in the element region. Examples of MEMS include sensors, actuators, and antennas. Examples of sensors include various sensors for acceleration, sound, light, etc.

[0057] The present invention is basically configured as described above. Although the method for manufacturing a bonded body of the present invention has been described in detail above, the present invention is not limited to the above-described embodiment, and various improvements and modifications may be made without departing from the spirit and scope of the present invention.

[0058] 10 Bonded body 12 First semiconductor element 12a, 14a, 30a, 36a, 50a Surface 13, 15, 31 Electrode 14, 36 Second semiconductor element 16 Anisotropically conductive member 18 Underfill layer 20 Support substrate 20a Surface 22 Head 24 Support 25 Substrate 25b Surface 26 Adhesive layer 30 Wafer 32, 33, 34 Laminate 35 Bonding portion 50 Insulating substrate 50b Back surface 51 Pore 52 Conductive path 52a, 52b Protrusion Ds Stacking direction Dt Thickness direction Lc Cutting line Lv Light d Average diameter ht Thickness p Center-to-center distance

Claims

1. A method for producing a joined body, comprising: a transfer step of transferring an anisotropic conductive member provided on a supporting substrate from the supporting substrate to a supporting member; and a joining step of joining the anisotropic conductive member transferred to the supporting member to a member to be joined having an electrode, wherein the supporting member has a portion with which the anisotropic conductive member comes into contact in the transfer step that is less flexible than the supporting substrate, and the anisotropic conductive member has an insulating substrate and a plurality of conductive paths that penetrate the insulating substrate in the thickness direction and have protrusions that protrude from at least one surface of the insulating substrate.

2. A method for producing a bonded body as described in claim 1, comprising a temporary bonding step between the transfer step and the bonding step, of temporarily bonding the anisotropic conductive member to the bonded member having the electrode.

3. The method for producing a joined body according to claim 1 or 2, further comprising a step of filling the joint between the anisotropically conductive member and the joined member with a filler after the joining step.

4. The method for producing a joint body according to claim 3, wherein the filler has a viscosity of 50 mPa·s or less.

5. A method for manufacturing a joined body as described in claim 2, wherein the transfer process is a process of transferring a plurality of the anisotropic conductive members from the supporting substrate to the support, and the temporary joining process is a process of temporarily joining the plurality of the anisotropic conductive members transferred to the support to one joined member having the electrode.

6. A method for manufacturing a joined body as described in claim 2, wherein the transfer process is a process of transferring a plurality of the anisotropic conductive members from the supporting substrate to the support, and the temporary bonding process is a process of temporarily bonding at least one of the plurality of anisotropic conductive members transferred to the support to a joined member having the electrode.

7. A method for producing a joint body according to any one of claims 1, 5 and 6, wherein the supporting substrate is a dicing tape or a tape having weak adhesion to the anisotropic conductive member.

8. The method for producing a bonded body according to any one of claims 1, 5 and 6, wherein the support is a substrate having an adhesive layer laminated thereon, and the substrate is a quartz substrate or a glass substrate having ultraviolet light transparency.

9. A method for producing a bonded body as described in any one of claims 2, 5 and 6, wherein the support is a substrate on which an adhesive layer whose adhesiveness is reduced by light is laminated, and an exposure process is carried out after the temporary bonding process, in which the adhesive layer is irradiated with the light to reduce the adhesive strength of the adhesive layer.

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